27256中文资料
2725中文资料
1.2
#4 2.54±0.1
#3
2.54
Cby = 0.01μF
PAD
#1 #2 #3 #4
Connection
Standby GND OUTPUT VDD
n Standby Function
#1 Input
Level H (0.7 VDD ≤ VIH ≤ VDD) or OPEN is selected. Level L (VIL ≤ 0.3 VDD) is selected.
5/5 (0.1VDD to 0.9VDD) 45 to 55 (at 1/2VDD) 15 10 Available (tristate) NSA6293A
*1: If you require a product with a frequency not given above, please contact us.
2.5 ≤ F < 20 20 ≤ F < 40
27ቤተ መጻሕፍቲ ባይዱ5T
C-MOS 40 ≤ F < 60 ±100 +3.3±0.3 8 15 22 10 0.1VDD/0.9VDD IOL=4mA IOH=–4mA 0.2VDD/0.8VDD IOL=4mA IOH=–4mA 3/3 (0.2VDD to 0.8VDD) 25 35 40 60 ≤ F < 75 75 ≤ F < 100 100 ≤ F ≤ 125 –20 to +70
*2: If you require a product with an operating temperature range not given above, please contact us.
n Dimensions
2742中文资料
6+6
4+4 6+6 9+9 4+4 5+4 4+4 4+4 5+5 5+5 5+5 5+5 5+5 7+7
Slot Slot Slot Slot Slot Slot Slot Slot Slot Slot
Layer Layer Layer Layer Layer Layer Layer Layer Layer Layer Layer
● Maximum primary power: 200 W @ 100 kHz
● Slot technology, Lizt wire recommended for proximity and skin effects reduction
● Mains insulation according to IEC60065 and IEC60950 safety standards
Applications
This transformer is mainly intended to be used as a Resonant Switch-Mode Transformer for low-end 22” LCD TV sets with mains insulation. The most suitable circuit topology for this transformer is a half-bridge, quasi-resonant converter using Phillips ZVS controller TEA1610. The common range of operation for this switch-mode transformer is from 50-200 kHz.
822-ROM芯片及扩展方法文档资料
P0 ALE
80C31
WR
P2.7
RD
74LS273 74LS244
D1
Q1
D2
Q2
D3
Q3
D4
Q4
D5
Q5
D6
Q6
D7
Q7
D8
Q8
CP CLR
≥1
+5V
1Y1 1A1 1Y2 1A2 1Y3 1A3 1Y4 1A4 2Y1 2A1 2Y2 2A2 2Y3 2A3 2Y4 2A4
001-----------A口 010-----------B口 011-----------C口 100-----------计数器低8位 101-----------计数器高6位及计数
器方式设置位
三、工作方式设置及状态字格式
1、方式设置
PA：A口数据传送方向设置位。0--输入；1--输出。 PB：B口数据传送方向设置位。0--输入；1--输出。 PC1、PC2：C口工作方式设置位。
输出PCH PCL 指令
二、RAM扩展方法 1、数据存储器
常用的数据存储器SRAM芯片有6116﹑6264﹑62256等。
6116
A7 1
24 Vcc
A6 2
23 A8
A4 3
22 A9
A4 4
21 WE
A3 5
20 OE
A2 A1
6 7
6116
19 18
A10 CE
A0 8
17 D7
D0 9
16 D6
15 I/O3
RDY/BUSY A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND
YXC编程器详细说明书样本
YX-C多功能编程器YX-C多功能编程器是咱们依照国外资料仿制一种便宜、功能繁多普及型编程器。
YX-C多功能编程器通过并口与PC连接，支持Win9x、Me、XP、NT以及操作系统；英文软件(性能稳定)，适合电脑公司、电子兴趣者、电子产品维修等工作人员使用。
使用前只需要将“YX-C程序”复制到电脑硬盘中即可。
打开文献夹“YX-C程序”，双击“EpromM51.exe”一、软件运营窗口如下：二、菜单栏：1、File（文件）：下拉菜单中Load打开需要编程文献。
下拉菜单中Save as‥另存为编程器读入文献作为备用。
下拉菜单中Exit为退出程序。
2、Edit（编辑）：编辑数据。
3、Device（选取元件）：选取芯片类型。
4、Action（操作）：对芯片进行操作，如：读写、编程/RAM测试、比较/校验、空白检查、擦除芯片、获取ID、清空缓存、颠倒数据、互换字节等。
5、Help（帮助）：联机测试等。
6、主窗口简介：三、工具栏：1、打开文献。
把编译好数据调入编程器中。
可以打开文献类型为：二进制（*.BIN）、十六进制（*.HEX）等。
2、另存为一种文献。
把正在编辑中数据此外保存为一种*.bin文献。
3、清除缓存。
4、读取芯片数据。
5、校验数据。
6、空白测试。
检测芯片存储器与否为空。
7、获取芯片ID。
8、芯片编程。
9、擦除（清空）芯片。
四、支持芯片列表EPROM ：27C16、27C32、27C64、27C128、27C256、27C512、27C010、27C020、27C040、27C1001 M27C1001、M27C、M27C400127C080，M27C801，M87C2572716(Vpp25V)、2732、2764、27128、27256、27512、27010FLASH Memory ：28F64、28F128、28F256、28F512、28F010、28F020MX26C1000、MX26C、MX28F1000、MX28FAm28F256A、Am28F512A、Am28F010A、Am28F020AIntel：i28F001BX、28F004、28F008、28F016SST28SF040A 、LE28F400129F64、29F128、29F256、29F512、29F010、29F020、29F040、29F08029F001、29F002、29F004、29F008、29F016、29F032AT29C256、AT29C512、AT29C010A、AT29C020、AT29C040、AT29C040AW29EE512、W29EE011、W29EE012、W29C020(128)、W29C040PH29EE010(W29EE011)ASD AE29F1008 (AT29C010)、AE29F (AT29C020)AT49F512、AT49F010、AT49F020、AT49F040SST39SF010、SST3S9F020 、SST39SF040AT49F001、AT49F002 、AT49F008AAm29F512、Am29F010、Am29F020、Am29F040、HY29F08029F002、29F002T、Pm29F002TEEPROM ：28C65、28C64、28C128、28C256、28C512、28C010、28C020、28C040 M28C16A/17A (DIP28)28C16、XLS2816 (DIP24)AT28C64B、AT28C256、AT28C512、AT28C010、AT28C020、AT28C040电擦 EPROM ：W27E512、W27E010、W27C010、W27C020、W27C040SST27SF256、SST27SF512、SST27SF010、SST27SF020MX26C4000Vcc = 3.3-3.6V SST37VF512、SST37VF010、SST37VF020、SST37VF040串行(I2C) EEPROM ：24C02、24C04、24C08、24C16、85C72、85C82、85C9224C32、24C64、24C128、24C256、24C512 (所有C、LC系列)PCF8572 或8572，PCF8582或8582，PCF8592或8592Microwire EEPROM ：8位模式：93C06、93C46、93LC46、93C56、93C57、93C66、93C76、93C86、93C13、93C1416位模式：AT59C11、AT59C22、AT59C13CAT35C102、CAT35C104、CAT35C10893C06A 、93C46X、93C56、93C66、93C76、93C86 (NS)SPI EEPROM ：Atmel：AT25010、020、040 (A8-A0)AT25080、160、320、640、128、256 (A15-A0)ST：W95010....256、Microchip 25x010 - 25x64025010、25020、2504025C080、25C160、25C320、25C640、25C128、25C256、25C512AT25HP256、AT25HP512AT25HP1024CAT64LCxxx (16位数据I/O)CAT64LC010、CAT64LC020、CAT64LC040PIC单片机：17XXX、18XXX系列16C84，16F84，16F84A ,16F627/16F62812C508/A，12C509/A，12CE518，12CE519，16C50516C620 16C621，16C622，16CE623，16CE624，16CE625，16C710/71151系列单片机(需要51AVR适配器) ：AT89C51、52、55、AT89LV51、52、55AT89S51、AT89S52、AT89S53、AT89LS51、AT89LS52、AT89SL53AT89S8252 (8K+2K)、AT89LS8252、AT89LS53AT89C1051、AT89C2051、AT89C4051 (20pin)AT89C51RC (32KB)、AT89C55WD (6.2V)AT89LV52,AT89C55,AT89LV55 AT89S8252,AT89LS8252,AT89S53,AT89LS53 AT87F51,AT87F52 i87C51、i87C51FA、i87C51FBi8xC51、i8xC52、i8xC54、i8xC58i87C51,i87C51FA,i87C51FB,i87C51FC,i87C52,i87C54,i87C58 AT89C51RC (32KB)，AT89C55WD等AT90S1200、AT90S231390S2333、90S4433、90S4414、90S8515、90S4434、90S8535，AT90S2313四、举例操作阐明使用编程器对W27C020进行读、擦除和写1、打开文献夹“YX-C程序”，双击“EpromM51.exe”操作软件运营窗口如下：2、用鼠标点击“Device”，在下拉菜单中点击“EPROM Electrical Erase”，再在下拉菜单中点击“Winboad 27E/27C”，最后在下拉菜单中点击“W27x020 （Vpe=14V）”。
汽车电子常用芯片型号代换资料
汽车电子常用芯片型号代换资料汽车电子, 存储器标志印字芯片功能代换型号BOSCH3003930061 ADC0809B22AN 存储器 93C06B34AB 存储器 24C02B43AB 存储器 24C02B46AJ 存储器 24C02B49AJ 存储器 24C02B52AP 存储器 24C02B54AH 存储器 24C02B57120 存储器 27C64B57324 存储器 2732AB57347 存储器 27C64B57423 存储器 27C256B57449 74HC74B57477 存储器 27C64B57519 存储器 27C64B57581 74HC573B57604 存储器 27C256B57605 存储器 27256B57607 存储器 27C128B57610 存储器 27C128B57618 存储器 87C257B57618 存储器 87C64B57625 存储器 2764AB57654 存储器 27C256B57696 存储器 27C256B57701 存储器 27C256B57733 4x位开关 TLE4211, TLE6220 B57764 存储器 87C257B57764 存储器 87C64B57771 存储器 27C256B57922 存储器 87C257B57960 存储器 27C256B57995 存储器 TMS27C256B58014 存储器 27C256B58038 存储器 27C256B58094 存储器 27C510B58126 存储器 27C010B58127 存储器 27C512B58150 存储器 87C257B58157 存储器 27C512B58185 存储器 87C257B58196 存储器 NS93C46B58234 存储器 27C256B58235 存储器 87C257B58239 存储器 27C512B58240 6 x位开关 TLE4216G, TLE4226GB58241 4 x位开关 TLE4214G, TLE6225B58243 存储器 CJ87BC6QGB58244 I87M12B58258 存储器 24C02B58265 控制器 CAN控制器??B58275 存储器 27C1024B58286 控制器 SAB80C166B58293 存储器 27C512B58331 存储器 28F010B58334 存储器 28C64B58380 存储器 24C02B58381 存储器 AM28F512B58399 存储器 AM29F010B58400 存储器 87C510B58424 存储器 27C512B58502 ABS,ASR系统IC TLE5200G, TLE6210G B58504 ABS,ASR系统IC TLE5201G, TLE6211G B58505 2 x位开关 TLE5225G, TLE6215GB58517 存储器 28F020B58533 存储器 27C4096B58539 存储器 27C256B58541 存储器 27C512B58542 存储器 27C512B58543 存储器 27C512B58544 存储器 27C1001B58545 存储器 87C257B58546 存储器 87C510B58547 存储器 27C1001B58548 存储器 TMS27PC210 = 27C1024B58550 存储器 27C512B58590 AS87C196ENB58637 4 x位开关 TLE5226G, TLE6216GB58639 存储器 87PC110B58732 4 x位开关 TLE5216G, TLE6220B58755 存储器 AM29F200B58768 存储器 AM29F400ABB58791 存储器 AM29F200ABB58813 存储器 93C56B58911 存储器 TMS27C010AB58335 存储器 AT28C64BB58601 存储器 AM29F200BB9411 存储器 AM27C256DELCO08393 功放 TDA7372A96405 功放 TDA7376B9355092 存储器 24C049355093 存储器 24C0816124342 功放 TDA736016175974 RDS解调器 SAA6579 16219796 功放 TDA7454 100% , not TDA7384 16233541 存储器 M27C256BPIONEERPA2024A 电源 TA8244HPA3002 功放 HA1397PA3005 功放 HA1384PA3027A 功放 HA13150APA3029A 功放 HA13151PA3029B 功放 HA13151PAL001A 功放 TDA7394PAL002A 功放 TDA7394PAL003A 功放 TDA7384APAL005A 功放 TDA7385PAL006A 功放 TDA7560PAL007A 功放 TDA7560PAU001A 功放 HA13151VISTEON0022FBCAC 电源 TL751M100040FBCAC 电源 TL751M1077002 I2C存储器 24C167008FB 电源 78L0570001BB RDS解调器 TDA733070001SE RDS解调器 TDA733070001RR RDS解调器 TDA7330 ??70002FE 音频处理器 TDA731170003AB 功放 TDA200370003SC FREQ. SYNTH.70003SE RDS解调器 TDA733070005EB PLL立体声译码器 TDA159170005EH 音频处理器 TDA7340P70006SE 音频处理器 TDA734070008AB 功放 TDA736070009AB 功放 11 pins70010AB 功放 TDA735070010BB 双运放 TDA342070010FB 电源 TL751M1070011AB 功放 TDA7350with some modifications 70011SB 音频处理器 TDA152470014BB 控制放大器 LM83770016SE 音频处理器 TDA7460N70017AB 驱动放大 TDA723770017FB 电源 TA1483270019SB 音频处理器70023AB 功放 TDA739170024AB 功放 TDA737570024SB 杜比电路 TEA065570025SB AMS LA201070026SB FRONT END70027SB70028SB IF/DET70029SB 音频处理器 TDA730670032AB 前置放大 TDA1523 ??70033BB 控制放大器 LM83770034AB 功放 TDA1519B70039AB 功放 TDA8566Q70042FB 电源 L084, L495370043AB TEA0675 or TDA8586Q70045SB 杜比电路 TEA067570047SB 杜比电路 TEA0675T70052AB 功放 TDA8586Q70082FB 电源70530FB 电源70670FS 前置放大 TEA0676T71005DC LCD显示驱动 PCF857771005TB 多频调制 DS36277N7100130 PCF8576TN700700CFFB000 电源 PHIL, HSOP-20 F2DF-14A652-EA 电源 TL751M10SONY159-00 功放 HA13151160-00 功放 HA13151180-00 功放 HA13152260-41 功放 HA13151260-77 功放 HA13150A279-82 功放 HA13151279-87 功放 HA13151279-89 功放 HA13152360-47 功放 HA13153365-41 功放 HA13155368-11 电子音量 LC75372E 369-41 功放 HA13155369-42 功放 HA13153426-49 功放 HA13155448-48 功放 HA13157448-61 功放 HA13156490-48 功放 HA13158PICKUPSOPTIMA-150S JVC OPTIMA-6S KSP-1H KENWOOD KSS-213F RAE0142Z MATSUSHITA RAE0144 1121 SONY KSS-210AKSS-168A SONY KSS-320BKSS-412A SONY KSS-401AKSS-401A SONY KSS-412AKSS-313A SONY KSS-313CKSS-240 SONY KSS-390KSS-314A SONY KSS-313A SOH-AAU SAMSUNG KSS-213KSS-540A SONY KSS-541AKSS-520A SONY KSS-521AMOTOROLAMC13304T3 功放 TA8215MC13306T3S 功放 TA8205MC13309T3 功放 TA8215MC13320T3 功放CHRYSLER 4632512 音频处理器 TDA7314S 4651311 功放 TDA1553Q4391943 74HC004392073 27C2564392075 74HC144517571 74HC3734517572 74HC74 ??4632511 TDA1591T4632858 TDA3601AQ4632990 M28F1024651350 L9222AOTHERSM851G OKI , 存储器 93C4616811G OKI , 存储器 93C4616911 OKI , 存储器 59C11 ADxxxx YAZAKI, 存储器 93C46 8-bit ABxxxx YAZAKI, 存储器 ER59C11标志印字芯片功能代换型号BOSCH3003930061 ADC0809B22AN 存储器 93C06B34AB 存储器 24C02B43AB 存储器 24C02B46AJ 存储器 24C02B49AJ 存储器 24C02B52AP 存储器 24C02B54AH 存储器 24C02B57120 存储器 27C64B57324 存储器 2732AB57347 存储器 27C64B57423 存储器 27C256B57449 74HC74B57477 存储器 27C64B57519 存储器 27C64B57581 74HC573B57604 存储器 27C256B57605 存储器 27256B57607 存储器 27C128B57610 存储器 27C128B57618 存储器 87C64B57625 存储器 2764AB57654 存储器 27C256B57696 存储器 27C256B57701 存储器 27C256B57733 4x位开关 TLE4211, TLE6220B57764 存储器 87C257B57764 存储器 87C64B57771 存储器 27C256B57808 存储器 27C256B57922 存储器 87C257B57960 存储器 27C256B57995 存储器 TMS27C256B58014 存储器 27C256B58038 存储器 27C256B58094 存储器 27C510B58126 存储器 27C010B58127 存储器 27C512B58150 存储器 87C257B58157 存储器 27C512B58185 存储器 87C257B58196 存储器 NS93C46B58234 存储器 27C256B58235 存储器 87C257B58239 存储器 27C512B58240 6 x位开关 TLE4216G, TLE4226G B58241 4 x位开关 TLE4214G, TLE6225 B58243 存储器 CJ87BC6QGB58244 I87M12B58258 存储器 24C02B58265 控制器 CAN控制器??B58275 存储器 27C1024B58286 控制器 SAB80C166B58293 存储器 27C512B58331 存储器 28F010B58380 存储器 24C02B58381 存储器 AM28F512B58399 存储器 AM29F010B58400 存储器 87C510B58424 存储器 27C512B58502 ABS,ASR系统IC TLE5200G, TLE6210G B58504 ABS,ASR系统IC TLE5201G, TLE6211G B58505 2 x位开关 TLE5225G, TLE6215GB58517 存储器 28F020B58530 存储器 AM29F010B58533 存储器 27C4096B58539 存储器 27C256B58541 存储器 27C512B58542 存储器 27C512B58543 存储器 27C512B58544 存储器 27C1001B58545 存储器 87C257B58546 存储器 87C510B58547 存储器 27C1001B58548 存储器 TMS27PC210 = 27C1024B58550 存储器 27C512B58590 AS87C196ENB58637 4 x位开关 TLE5226G, TLE6216GB58639 存储器 87PC110B58732 4 x位开关 TLE5216G, TLE6220B58755 存储器 AM29F200B58768 存储器 AM29F400ABB58791 存储器 AM29F200ABB58813 存储器 93C56B58911 存储器 TMS27C010AB58335 存储器 AT28C64BB58601 存储器 AM29F200BB9411 存储器 AM27C256DELCO08393 功放 TDA7372A96405 功放 TDA7376B9355092 存储器 24C049355093 存储器 24C0816124342 功放 TDA736016175974 RDS解调器 SAA6579 16219796 功放 TDA7454 100% , not TDA7384 16233541 存储器 M27C256BPIONEERPA2024A 电源 TA8244HPA3002 功放 HA1397PA3005 功放 HA1384PA3027A 功放 HA13150APA3029A 功放 HA13151PA3029B 功放 HA13151PAL001A 功放 TDA7394PAL002A 功放 TDA7394PAL003A 功放 TDA7384APAL005A 功放 TDA7385PAL006A 功放 TDA7560PAL007A 功放 TDA7560PAU001A 功放 HA13151VISTEON0022FBCAC 电源 TL751M100040FBCAC 电源 TL751M1077002 I2C存储器 24C167008FB 电源 78L0570001BB RDS解调器 TDA733070001SE RDS解调器 TDA733070001RR RDS解调器 TDA7330 ??70002FE 音频处理器 TDA731170003AB 功放 TDA200370003SC FREQ. SYNTH.70003SE RDS解调器 TDA733070005EB PLL立体声译码器 TDA159170005EH 音频处理器 TDA7340P70006SE 音频处理器 TDA734070008AB 功放 TDA736070009AB 功放 11 pins70010AB 功放 TDA735070010BB 双运放 TDA342070010FB 电源 TL751M1070011AB 功放 TDA7350with some modifications 70011SB 音频处理器 TDA152470014BB 控制放大器 LM83770016SE 音频处理器 TDA7460N70017AB 驱动放大 TDA723770017FB 电源 TA1483270019SB 音频处理器70023AB 功放 TDA739170024AB 功放 TDA737570024SB 杜比电路 TEA065570025SB AMS LA201070026SB FRONT END70027SB70028SB IF/DET70029SB 音频处理器 TDA730670032AB 前置放大 TDA1523 ??70033BB 控制放大器 LM83770034AB 功放 TDA1519B70039AB 功放 TDA8566Q70042FB 电源 L084, L495370043AB TEA0675 or TDA8586Q70045SB 杜比电路 TEA067570047SB 杜比电路 TEA0675T70052AB 功放 TDA8586Q70082FB 电源70530FB 电源70670FS 前置放大 TEA0676T71005DC LCD显示驱动 PCF857771005TB 多频调制 DS36277N7100130 PCF8576TN700700CFFB000 电源 PHIL, HSOP-20F2DF-14A652-EA 电源 TL751M10SONY159-00 功放 HA13151160-00 功放 HA13151180-00 功放 HA13152260-41 功放 HA13151260-77 功放 HA13150A279-82 功放 HA13151279-87 功放 HA13151279-89 功放 HA13152360-47 功放 HA13153365-41 功放 HA13155368-11 电子音量 LC75372E 369-41 功放 HA13155369-42 功放 HA13153426-49 功放 HA13155448-48 功放 HA13157448-61 功放 HA13156490-48 功放 HA13158PICKUPSOPTIMA-150S JVC OPTIMA-6SKSP-1H KENWOOD KSS-213F RAE0142Z MATSUSHITA RAE0144 1121 SONY KSS-210AKSS-168A SONY KSS-320BKSS-412A SONY KSS-401AKSS-401A SONY KSS-412AKSS-313A SONY KSS-313CKSS-240 SONY KSS-390KSS-314A SONY KSS-313ASOH-AAU SAMSUNG KSS-213KSS-540A SONY KSS-541AKSS-520A SONY KSS-521AMOTOROLAMC13304T3 功放 TA8215MC13306T3S 功放 TA8205MC13309T3 功放 TA8215MC13320T3 功放CHRYSLER4632512 音频处理器 TDA7314S4651311 功放 TDA1553Q4391943 74HC004392073 27C2564392075 74HC144517571 74HC3734517572 74HC74 ??4632511 TDA1591T4632858 TDA3601AQ4632990 M28F1024651350 L9222AOTHERSM851G OKI , 存储器 93C4616811G OKI , 存储器 93C4616911 OKI , 存储器 59C11 ADxxxx YAZAKI, 存储器 93C46 8-bit ABxxxx YAZAKI, 存储器 ER59C11第1部分汽车音响常用集成电路1.1 收音系统电路1.1.1 AN7222 AM调谐，AM/FM中频放大电路1.1.2 AN7254 FM前端电路1.1.3 AN7463S 带消噪的FM立体声解码器1.1.4 BA403 FM中频放大器1.1.5 BA1310 锁相环式FM立体声解码器1.1.6 BA1332/BA1332L 锁相环式FM立体声解码器1.1.7 BA1350 带噪声抑制的FM立体声解码器1.1.8 BA1405/BA1405F FM立体声调制器1.1.9 CX20029 AM/FM立体声收音机电路1.1.10 CXA1101P/CXA1101M 双通道杜比B型降噪电路1.1.11 CXA1102P/CXA1102M 双通道杜比B型降噪电路1.1.12 CXA1238M/CXA1238S AM/FM立体声收音电路1.1.13 HA11219 FM噪声抑制电路1.1.14 HA12134A 双通道杜比B型降噪电路1.1.15 KA2244 FM中频放大器1.1.16 KA2261 锁相环式FM立体声解码器1.1.17 KB4409 锁相环式FM立体声解码器1.1.18 KIA6010SN FM噪声抑制电路1.1.19 LA1130 AM调谐电路1.1.20 LA1132 AM调谐电路1.1.21 LA1135 AM调谐电路1.1.22 LA1140 FM中频放大器1.1.23 LA1175 FM调谐电路1.1.24 LA1862M FM立体声解码器1.1.25 LA2110 FM消噪电路1.1.26 LA3365 锁相环式FM立体声解码器1.1.27 LA3370 锁相环式FM立体声解码器1.1.28 LA3375 锁相环式FM立体声解码器1.1.29 LA3430 带消噪功能的锁相环式FM立体声解码器1.1.30 LB3500 FM本振频率1/8分频器1.1.31 LC7218/LC7218M/LC7218JM 电子调谐PLL频率合成器1.1.32 LC7219/LC7219M/LC7219JM 电子调谐PLL频率合成器1.1.33 LC72131/LC72131M AM/FM PLL频率合成器1.1.34 LC72146/LC72146M/LC72146V 电子调谐PLL频率合成器1.1.35 LC72191/LC72191M/LC72191JM 立体声电子调谐PLL频率合成器1.1.36 LC72722/LC72722M/LC72722PM 单片RDS信号处理系统1.1.37 LM7001/LM7001M 电子调谐辅助微处理器1.1.38 TA7343AP/TA7343AF 锁相环式FM立体声解码器1.1.39 TA7358P/AP FM调谐电路1.1.40 TA7640AP AM调谐，AM/FM中频放大器1.1.41 TA8122N/TA8122F 3V AM/FM调谐电路1.1.42 TA8127N/TA8127F 3V AM/FM调谐电路1.1.43 TA8132N/TA8132F AM/FM中放及立体声解码器1.1.44 TA8164P 3V AM/FM收音机电路1.1.45 TC9246F/TC9246P 数字音响锁相环电路1.1.46 TD7104P/TD7104F 数字合成调谐器用ECL预引比例器1.1.47 TDA1579/TDA1579T 交通告警无线传输解码器1.1.48 TEA0652 杜比B/C型降噪电路1.1.49 TEA5560 FM中频放大器1.1.50 μPB553AC 150M Hz低功耗分频电路1.1.51 μPC1167C2 FM中频放大器1.1.52 μPC1171C AM调谐电路1.1.53 μPC1191V AM调谐电路1.1.54 μPC1200V FM中频放大器1.1.55 μPC1215V AM电子调谐电路1.2 磁带放音系统电路1.2.1 AN6263N 磁带暂停检测电路1.2.2 BA338/BA338L 自动选曲电路1.2.3 BA3430S/BA3430F/BA3430FS 带静噪检测的立体声前置放大器1.2.4 BA6219B/BA6219BFP Y 双向电机驱动器1.2.5 BA6285FP/BA6285FS 双向电机驱动器1.2.6 CXA2509AQ 带选曲功能的均衡放大器1.2.7 D7784P 双声道磁头选择开关、自动翻转及放大器1.2.8 LA2000/LA2000S 单曲自动选曲电路1.2.9 LB1641 双向电机驱动器1.2.10 LB1649 双桥式电机驱动器1.2.11 LB1836M 桥式电机驱动器1.2.12 MM1322XFBE 电机驱动控制电路1.2.13 TA7291P/TA7291S/TA7291F 电机驱动控制电路1.2.14 μPC1470H 电机速度控制器1.3 音频处理电路1.3.1 AN214 4.4W音频功率放大器1.3.2 AN7168 5.8W×2双通道音频功率放大器1.3.3 AN7178 5.7W×2双通道音频功率放大器1.3.4 AN7310N 立体声双通道音频前置放大器1.3.5 AN7311 立体声双通道音频前置放大器1.3.6 BA328 双通道音频前置放大器1.3.7 BA5406 5W×2音频功率放大器1.3.8 CXA1646Q 电子音量控制电路1.3.9 CXA1946AQ 电子音量控制电路1.3.10 HA13001 5.5W×2(BTL 17.5W)音频功率放大器1.3.11 HA13119 5.5W×2音频功率放大器1.3.12 HA13150A 21W×4 BTL音频功率放大器1.3.13 HA13151/HA13151A 14W×4 BTL音频功率放大器1.3.14 HA 13153 15W×4 BTL音频功率放大器1.3.15 HA 13155 33W×4 BTL音频功率放大器1.3.16 LA2900M 双通道高电平线路放大器1.3.17 LA3160 双通道音频前置放大器1.3.18 LA4440 6W×2(BTL 19W)音频功率放大器1.3.19 LA4445 5.5W×2音频功率放大器1.3.20 LA4743B 45W×4(BTL 19W)音频功率放大器1.3.21 LA47501 50W×4(BTL 19W)音频功率放大器1.3.22 LC7538NM 电子音色控制电路1.3.23 LC75373ED 电子音量控制电路1.3.24 LC75383ED 电子音量控制电路1.3.25 M51522AL 双通道音频前置放大器1.3.26 TA7227P 5.5W×2音频功率放大器1.3.28 TA7240P/TA7240AP 5.8W×2音频功率放大器1.3.29 TA7270P 5.8W×2音频功率放大器1.3.30 TA7325P 双通道音频前置放大器1.3.31 TA7630P 双通道音量、音调、平衡控制电路1.3.32 TA8207K 4.5W×2音频功率放大器1.3.33 TA8210AH/TA8210AL 22W×2音频功率放大器1.3.34 TA8260AH 40W(BTL)×4音频功率放大器1.3.35 TA8263BH 43W(BTL)×4音频功率放大器1.3.36 TC9482N/TC9482F 电子音量控制器1.3.37 TDA1520 20W音频功率放大器1.3.38 TDA1557Q 22W×2音频功率放大器1.3.39 TDA2003H/TDA2003V 10W音频功率放大器1.3.40 TDA2004 10W×2音频功率放大器1.3.41 TDA2005 10W×2(BTL 20W)音频功率放大器1.3.42 TDA2009 10W×2音频功率放大器1.3.43 TDA2030/TDA2030A 18W音频功率放大器1.3.44 TDA7313/TDA7313D 音频处理电路1.3.45 TDA7314S 音频处理电路1.3.46 TDA7381A 24W×4音频功率放大器1.3.47 TDA7384A 35W×4音频功率放大器1.3.48 TDA7385A 30W×4音频功率放大器1.3.49 TDA8561Q 24W×4(BTL)或12W×4音频功率放大器1.3.50 TEA6320T 音量衰减控制电路1.3.51 μPC566H 低噪声音频前置放大器1.3.52 μPC1154H 4.8W音频功率放大器1.3.53 μPC1185H 5.8W×2音频功率放大器1.3.54 μPC1228H 双通道音频前置放大器1.3.55 μPC1230H 20W(BTL)音频功率放大器1.3.56 μPC2500H 45W音频功率放大器1.4 LED及LCD显示电路1.4.1 BA3834F/BA3834S 频谱显示带通滤波器1.4.2 BU2092/BU2092F/BU2092FV 12位串入并出LCD驱动器1.4.3 KA2284 5点双LED电平指示驱动器1.4.4 LC7265 接收频率显示电路1.4.5 LC7267 接收频率及时间显示电路1.4.6 LC75853NE/LC75853NW 带键入功能的1/4占空比LCD显示驱动器1.4.7 LC75854W 带键入功能的1/4占空比LCD 显示驱动器1.4.8 NJU6432BFB2 双LCD显示驱动器1.5 电源电路1.5.1 BA033FP 3.3V低压降3端稳压器1.5.2 BA4906 V2 汽车立体声系统电源电路1.5.3 BA6161F/BA6161N 电子调谐用开关电源稳压器1.5.4 CA3524E 开关电源稳压控制器1.5.5 KIA7019P/F～KIA7045P/F 电压检测器1.5.6 NJM2360AD/NJM2360AM 高精度DC/DC 变换控制器1.5.7NJM2368D/NJM2368E/NJM2368M/NJM2368V 开关电源稳压控制器1.5.8 S 801XX系列内置延时电路的高精度电压检测器1.5.9 S 808XX系列超小型封装高精度电压检测器1.5.10 TA76431F/TA76431S 电压精密调节器1.5.11 TDA3606 带电池检测的多电压稳压器1.5.12 TL494CN/TL494N 脉宽调制式开关稳压电路1.5.13 7805～7824系列5～24V/1A三端固定正稳压器1.5.14 78L05～78L24系列5～24V/0.3A三端固定正稳压器1.5.15 78M05～78M24系列5～24V/0.5A三端固定正稳压器1.5.16 7905～7924系列-5～-24V/1A三端固定负稳压器1.6 微处理器与微控制器1.6.1 DT9702 系统控制微处理器1.6.2 LC7230 带LCD驱动的PLL及控制器1.6.3 LC72323A 8909 带LCD驱动器的PLL及控制器1.6.4 μPD1701C 011 PLL频率合成数字调谐电路1.6.5 μPD1708AG026 数字调谐微处理器1.6.6 μPD1719G011 数字调谐微处理器1.7 CD及MD放音系统电路1.7.1 BA5984FP CD及MD机用5通道BTL电机驱动器1.7.2 BA6796FP CD机用5通道BTL电机驱动器1.7.3 CXA1782BQ 射频信号处理器1.7.4 CXA2523AR MD机射频矩阵放大器1.7.5 CXD2507AQ CD机数字信号处理器1.7.6 CXD2655BR MD机数字信号处理器1.7.7 LC89051V 数字音响接口接收器1.7.8 MN6479A 数字滤波电路1.7.9 TA2058F CD机功率驱动器1.7.10 TC9426F 数字伺服信号处理电路1.7.11 5M5877AM 数字滤波器及D/A变换器1.8 其他电路1.8.1 BA3121/BA3121F/BA3121N 接地隔离放大器1.8.2 BA3129/BA3129F 带开关2×2运算放大器1.8.3 BA4558/BA4558F/BA4558N 双运算放大器1.8.4 LM324N/LM324D 四运算放大器1.8.5 NJM2058D/NJM2058M/NJM2058V四运算放大器1.8.6NJM2100D/NJM2100L/NJM2100M/NJM2100V 双运算放大器1.8.7 NJM2103D/NJM2103L/NJM2103M系统恢复电路1.8.8 NJM2114D/NJM2114L/NJM2114M高性能低噪声双运算放大器1.8.9 NJM2903D/NJM2903L/NJM2903M双电压比较器1.8.10 NJM2904D/NJM2904L/NJM2904M双运算放大器1.8.11NJM4580D/NJM4580L/NJM4580M/NJM4580V 双运算放大器1.8.12 TA2050S/TA2050F接地隔离电路1.8.13 μPC358C/μPC358G/μPC358HA双运算放大器1.8.14 μPC1490H 红外遥控接收电路1.8.15 μPC4570C/μPC4570G/μPC4570HA 超低噪声宽带双运算放大器1.8.16 μPD6121G530 红外遥控接收电路1.8.17 24C01/24C02/24C04/24C08 1k/2k/4k/8k双线串行EEPROM1.8.18 24LC01/24LC02/24LC04/24LC08 1k/2k/4k/8k双线串行EEPROM1.9 汽车音响常用逻辑集成电路内部逻辑电路图1.10 汽车音响常用集成电路封装形式第2部分汽车音响集成电路实测数据2.1 实测集成电路型号表2.2 实测集成电路数据表2.3 实测汽车音响调谐器数据表第3部分汽车音响集成电路直接互换表3.1 汽车音响集成电路直接互换表(按字母顺序排列) 3.2 汽车音响集成电路直接互换表(按数字顺序排列)附录A 几种品牌汽车音响集成电路组合方案附录B 常用集成电路封装缩写英汉对照附录C 汽车音响常用集成电路厂商型号识别表附录D 汽车音响集成电路常用英汉词汇对照表参考资料。
TLC272_02中文资料
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
1
元器件交易网 TLC272, TLC272A, TLC272B, TLC272Y, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002
D Trimmed Offset Voltage: D D
D D D D D D
NC 1IN – NC 1IN + NC
4 5 6 7 8
3 2 1 20 19 18 17 16 15 14 9 10 11 12 13
NC 1OUT NC VDD NC NC 2OUT NC 2IN – NC
NC – No internal connection
SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002
equivalent schematic (each amplifier)
VDD P3 P4 R6
R1 IN – P1 IN +
R2
N5 P5 P6
NM27C256Q中文资料
TL D 10833NM27C256 262 144-Bit (32K x 8) High Performance CMOS EPROMDecember1993 NM27C256262 144-Bit(32K x8)High Performance CMOS EPROM General DescriptionThe NM27C256is a256K Electrically Programmable ReadOnly Memory It is manufactured in National’s latest CMOSsplit gate EPROM technology which enables it to operate atspeeds as fast as120ns access time over the full operatingrangeThe NM27C256provides microprocessor-based systemsextensive storage capacity for large portions of operatingsystem and application software Its120ns access timeprovides high speed operation with high-performance CPUsThe NM27C256offers a single chip solution for the codestorage requirements of100%firmware-based equipmentFrequently-used software routines are quickly executedfrom EPROM storage greatly enhancing system utilityThe NM27C256 is configured in the standard EPROM pin-out which provides an easy upgrade path for systems whichare currently using standard EPROMsThe NM27C256is one member of a high density EPROMFamily which range in densities up to4MbFeaturesY High performance CMOS120ns access timeY JEDEC standard pin configuration28-pin DIP package32-pin chip carrierY Drop-in replacement for27C256or27256Y Manufacturer’s identification codeBlock DiagramTL D 10833–1TRI-STATE is a registered trademark of National Semiconductor CorporationHPC TM is a trademark of National Semiconductor CorporationC1995National Semiconductor Corporation RRD-B30M65 Printed in U S AConnection Diagrams27C08027C04027C02027C01027C512A19XX V PP XX V PP XX V PP A16A16A16A16A15A15A15A15A15A12A12A12A12A12A7A7A7A7A7A6A6A6A6A6A5A5A5A5A5A4A4A4A4A4A3A3A3A3A3A2A2A2A2A2A1A1A1A1A1A0A0A0A0A0O0O0O0O0O0O1O1O1O1O1O2O2O2O2O2GNDGNDGNDGNDGNDDIP NM27C256TL D 10833–227C51227C01027C02027C04027C080V CCV CC V CC V CC XX PGM XX PGMA18A18V CC XX A17A17A17A14A14A14A14A14A13A13A13A13A13A8A8A8A8A8A9A9A9A9A9A11A11A11A11A11OE V PP OE OE OE OE V PP A10A10A10A10A10CE PGM CE CE CE PGM CE PGMO7O7O7O7O7O6O6O6O6O6O5O5O5O5O5O4O4O4O4O4O3O3O3O3O3Note Compatible EPROM pin configurations are shown in the blocks adjacent to the NM27C256pinsCommercial Temp Range (0 C to a 70 C)V CC e 5V g 10%Parameter Order Number Access Time (ns)NM27C256Q N V 120120NM27C256Q N V 150150NM27C256Q N V 200200Military Temp Range (b 55 C to a 125 C)V CC e 5V g 10%Parameter Order NumberAccess Time (ns)NM27C256QM 150150NM27C256QM 250250Extended Temp Range (b 40 C to a 85 C)V CC e 5V g 10%Parameter Order Number Access Time (ns)NM27C256QE NE VE 120120NM27C256QE NE VE 150150NM27C256QE NE VE 200200Note Surface mount PLCC package available for commercial and extended temperature ranges onlyPackage Types NM27C256Q N V XXX Q e Quartz-Windowed Ceramic DIP N e Plastic OTP DIPV e Surface-Mount PLCCAll packages conform to the JEDEC standardAll versions are guaranteed to function for slowerspeedsPin NamesSymbol Description A0–A14Addresses CE Chip Enable OE Output Enable O0–O7Outputs PGM ProgramXXDon’t Care (during Read)PLCCTL D 10833–3Top2Absolute Maximum Ratings (Note 1)If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications Storage Temperatureb 65 C to a 150 CAll Input Voltages except A9with Respect to Ground b 0 6V to a 7V V PP and A9with Respect to Ground b 0 7V to a 14V V CC Supply Voltage with Respect to Groundb 0 6V to a 7VESD Protectionl 2000VAll Output Voltages with Respect to GroundV CC a 1 0V to GND b 0 6VOperating RangeRange Temperature V CCComm’l 0 C to a 70 Ca 5V g 10%Industrialb 40 C to a 85 C a 5V g 10%Militaryb 55 C to a 125 Ca 5V g 10%Read OperationDC Electrical Characteristics Over Operating Range with V PP e V CCSymbol ParameterTest Conditions MinMax Units V IL Input Low Level b 0 50 8V V IH Input High Level 2 0V CC a 1V V OL Output Low Voltage I OL e 2 1mA 0 4V V OH Output High Voltage I OH e b 2 5mA 3 5VI SB1V CC Standby Current CE e V CC g 0 3V 100m A (Note 11)(CMOS)I SB2V CC Standby Current (TTL)CE e V IH1mA I CC1V CC Active Current CE e OE e V IL f e 5MHz35mA TTL Inputs Inputs e V IH or V IL I O e 0mA I PP V PP Supply Current V PP e V CC10m A V PP V PP Read Voltage V CC b 0 7V CC V I LI Input Load Current V IN e 5 5V or GND b 11m A I LOOutput Leakage CurrentV OUT e 5 5V or GND b 1010m AAC Electrical Characteristics Over Operating Range with V PP e V CCSymbol Parameter100120150200UnitsMinMax MinMax MinMax MinMax t ACC Address to Output Delay 100120150200ns t CE CE to Output Delay 100120150200t OE OE to Output Delay 50505050t DFOutput Disable to 30354555(Note 2)Output Floatt OHOutput Hold from Addresses (Note 2)CE or OE000Whichever Occurred First3Capacitance T A e a25 C f e1MHz(Note2)Symbol Parameter Conditions Typ Max Units C IN Input Capacitance V IN e0V612pF C OUT Output Capacitance V OUT e0V912pFAC Test ConditionsOutput Load1TTL Gate andC L e100pF(Note8) Input Rise and Fall Times s5ns Input Pulse Levels0 45to2 4V Timing Measurement Reference Level(Note10) Inputs0 8V and2 0V Outputs0 8V and2 0VAC Waveforms(Notes6 7and9)TL D 10833–4 Note1 Stresses above those listed under‘‘Absolute Maximum Ratings’’may cause permanent damage to the device This is stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied Exposure to absolute maximum rating conditions for extended periods may affect device reliabilityNote2 This parameter is only sampled and is not100%testedNote3 OE may be delayed up to t ACC b t OE after the falling edge of CE without impacting t ACCNote4 The t DF and t CF compare level is determined as followsHigh to TRI-STATE the measured V OH1(DC)b0 10VLow to TRI-STATE the measured V OL1(DC)a0 10VNote5 TRI-STATE may be attained using OE or CENote6 The power switching characteristics of EPROMs require careful device decoupling It is recommended that at least a0 1m F ceramic capacitor be used on every device between V CC and GNDNote7 The outputs must be restricted to V CC a1 0V to avoid latch-up and device damageNote8 TTL Gate I OL e1 6mA I OH e b400m AC L e100pF includes fixture capacitanceNote9 V PP may be connected to V CC except during programmingNote10 Inputs and outputs can undershoot to b2 0V for20ns MaxNote11 CMOS inputs V IL e GND g0 3V V IH e V CC g0 3V4Programming Characteristics(Notes1 2 3 4and5)Symbol Parameter Conditions Min Typ Max Unitst AS Address Setup Time1m st OES OE Setup Time1m st VPS V PP Setup Time1m st VCS V CC Setup Time1m st DS Data Setup Time1m st AH Address Hold Time0m st DH Data Hold Time1m st DF Output Enable to Output CE e V IL060ns Float Delayt PW Program Pulse Width95100105m st OE Data Valid from OE CE e V IL100nsI PP V PP Supply Current CE e V IL30mA during Programming PulseI CC V CC Supply Current50mAT A Temperature Ambient202530 CV CC Power Supply Voltage6 06 256 5VV PP Programming Supply Voltage12 512 7513 0Vt FR Input Rise Fall Time5nsV IL Input Low Voltage0 00 45VV IH Input High Voltage2 44 0Vt IN Input Timing Reference Voltage0 82 0Vt OUT Output Timing Reference Voltage0 82 0V Programming Waveforms(Note3)TL D 10833–5Note1 National’s standard product warranty applies to devices programmed to specifications described hereinNote2 V CC must be applied simultaneously or before V PP and removed simultaneously or after V PP The EPROM must not be inserted into or removed from a board with voltage applied to V PP or V CCNote3 The maximum absolute allowable voltage which may be applied to the V PP pin during programming is14V Care must be taken when switching the V PP supply to prevent any overshoot from exceeding this14V maximum specification At least a0 1m F capacitor is required across V PP V CC to GND to suppress spurious voltage transients which may damage the deviceNote4 Programming and program verify are tested with the Fast Program Algorithm at typical power supply voltages and timingsNote5 During power up the PGM pin must be brought high(t V IH)either coincident with or before power is applied to V PP5Fast Programming Algorithm Flow ChartTL D 10833–6FIGURE16Functional DescriptionDEVICE OPERATIONThe six modes of operation of the EPROM are listed in Ta-ble I It should be noted that all inputs for the six modes are at TTL levels The power supplies required are V CC and V PP The V PP power supply must be at12 75V during the three programming modes and must be at5V in the other three modes The V CC power supply must be at6 25V dur-ing the three programming modes and at5V in the other three modesRead ModeThe EPROM has two control functions both of which must be logically active in order to obtain data at the outputs Chip Enable(CE PGM)is the power control and should be used for device selection Output Enable(OE)is the output control and should be used to gate data to the output pins independent of device selection Assuming that addresses are stable address access time(t ACC)is equal to the delay from CE to output(t CE) Data is available at the outputs t OE after the falling edge of OE assuming that CE PGM has been low and addresses have been stable for at least t ACC–t OEStandby ModeThe EPROM has a standby mode which reduces the active power dissipation by over99% from385mW to0 55mW The EPROM is placed in the standby mode by applying a CMOS high signal to the CE PGM input When in standby mode the outputs are in a high impedance state indepen-dent of the OE inputOutput DisableThe EPROM is placed in output disable by applying a TTL high signal to the OE input When in output disable all cir-cuitry is enabled except the outputs are in a high imped-ance state(TRI-STATE)Output OR-TypingBecause the EPROM is usually used in larger memory ar-rays National has provided a2-line control function that accommodates this use of multiple memory connections The2-line control function allows fora)the lowest possible memory power dissipation andb)complete assurance that output bus contention will notoccurTo most efficiently use these two control lines it is recom-mended that CE PGM be decoded and used as the primary device selecting function while OE be made a common connection to all devices in the array and connected to theREAD line from the system control bus This assures that all deselected memory devices are in their low power standby modes and that the output pins are active only when data is desired from a particular memory deviceProgrammingCAUTION Exceeding14V on pin1(V PP)will damage the EPROMInitially and after each erasure all bits of the EPROM are in the‘‘1’s’’state Data is introduced by selectively program-ming‘‘0’s’’into the desired bit locations Although only ‘‘0’s’’will be programmed both‘‘1’s’’and‘‘0’s’’can be pre-sented in the data word The only way to change a‘‘0’’to a ‘‘1’’is by ultraviolet light erasureThe EPROM is in the programming mode when the V PP power supply is at12 75V and OE is at V IH It is required that at least a0 1m F capacitor be placed across V PP V CC to ground to suppress spurious voltage transients which may damage the device The data to be programmed is applied8bits in parallel to the data output pins The levels required for the address and data inputs are TTLWhen the address and data are stable an active low TTL program pulse is applied to the CE PGM input A program pulse must be applied at each address location to be pro-grammed The EPROM is programmed with the Fast Pro-gramming Algorithm shown in Figure1 Each Address is programmed with a series of100m s pulses until it verifies good up to a maximum of25pulses Most memory cells will program with a single100m s pulseThe EPROM must not be programmed with a DC signal ap-plied to the CE PGM inputProgramming multiple EPROM in parallel with the same data can be easily accomplished due to the simplicity of the programming requirments Like inputs of the parallel EP-ROM may be connected together when they are pro-grammed with the same data A low level TTL pulse applied to the CE PGM input programs the paralleled EPROMProgram InhibitProgramming multiple EPROMs in parallel with different data is also easily accomplished Except for CE PGM all like inputs(including OE)of the parallel EPROMs may be common A TTL low level program pulse applied to an EP-ROM’s CE PGM input with V PP at12 75V will program that EPROM A TTL high level CE PGM input inhibits the other EPROMs from being programmed7Functional Description(Continued)Program VerifyA verify should be performed on the programmed bits to determine whether they were correctly programmed The verify may be performed with V PP at12 75V V PP must be at V CC except during programming and program verify AFTER PROGRAMMINGOpaque labels should be placed over the EPROM window to prevent unintentional erasure Covering the window will also prevent temporary functional failure due to the genera-tion of photo currentsMANUFACTURER’S IDENTIFICATION CODEThe EPROM has a manufacturer’s identification code to aid in programming When the device is inserted in an EPROM programmer socket the programmer reads the code and then automatically calls up the specific programming algo-rithm for the part This automatic programming control is only possible with programmers which have the capability of reading the codeThe Manufacturer’s Identification code shown in Table II specifically identifies the manufacturer and device type The code for NM27C256is‘‘8F04’’ where‘‘8F’’designates that it is made by National Semiconductor and‘‘04’’designates a256K partThe code is accessed by applying12V g0 5V to address pin A9 Addresses A1–A8 A10–A16 and all control pins are held at V IL Address pin A0is held at V IL for the manu-facturer’s code and held at V IH for the device code The code is read on the eight data pins O0–O7 Proper code access is only guaranteed at25 C to g5 CERASURE CHARACTERISTICSThe erasure characteristics of the device are such that era-sure begins to occur when exposed to light with wave-lengths shorter than approximately4000Angstroms( ) It should be noted that sunlight and certain types of fluores-cent lamps have wavelengths in the3000 –4000 range The recommended erasure procedure for the EPROM is ex-posure to short wave ultraviolet light which has a wave-length of2537 The integrated dose(i e UV intensity c exposure time)for erasure should be a minimum of 15W-sec cm2The EPROM should be placed within1inch of the lamp tubes during erasure Some lamps have a filter on their tubes which should be removed before erasure Table III shows the minimum EPROM erasure time for various light intensitiesAn erasure system should be calibrated periodically The distance from lamp to device should be maintained at one inch The erasure time increases as the square of the dis-tance from the lamp(if distance is doubled the erasure time increases by factor of4) Lamps lose intensity as they age When a lamp is changed the distance has changed or the lamp has aged the system should be checked to make cer-tain full erasure is occurring Incomplete erasure will cause symptoms that can be misleading Programmers compo-nents and even system designs have been erroneously suspected when incomplete erasure was the problemSYSTEM CONSIDERATIONThe power switching characteristics of EPROMs require careful decoupling of the devices The supply current I CC has three segments that are of interest to the system de-signer the standby current level the active current level and the transient current peaks that are produced by volt-age transitions on input pins The magnitude of these tran-sient current peaks is dependent of the output capacitance loading of the device The associated V CC transient voltage peaks can be suppressed by properly selected decoupling capacitors It is recommended that at least a0 1m F ceramic capacitor be used on every device between V CC and GND This should be a high frequency capacitor of low inherent inductance In addition at least a4 7m F bulk electrolytic capacitor should be used between V CC and GND for each eight devices The bulk capacitor should be located near where the power supply is connected to the array The pur-pose of the bulk capacitor is to overcome the voltage drop caused by the inductive effects of the PC board traces8Mode SelectionThe modes of operation of NM27C256listed in Table I A single5V power supply is required in the read mode All inputs are TTL levels except for V PP and A9for device signatureTABLE I Modes SelectionPinsCE PGM OE V PP V CC Outputs ModeRead V IL V IL V CC5 0V D OUTOutput Disable XV IH V CC5 0V High-Z(Note1)Standby V IH X V CC5 0V High-ZProgramming V IL V IH12 75V6 25V D INProgram Verify V IH V IL12 75V6 25V D OUTProgram Inhibit V IH V IH12 75V6 25V High-ZNote1 X can be V IL or V IHTABLE II Manufacturer’s Identification CodePins A0A9O7O6O5O4O3O2O1O0Hex (10)(24)(19)(18)(17)(16)(15)(13)(12)(11)DataManufacturer Code V IL12V100011118F Device Code V IH12V0000010004910Physical Dimensions inches(millimeters)UV Window Cavity Dual-In-Line CerDIP Package(Q)Order Number NM27C256QXXXNS Package Number J28AQ28-Lead Plastic One-Time-Programmable Dual-In-Line PackageOrderNumber NM27C256NXXXNS Package Number N28B11N M 27C 256262 144-B i t (32K x 8)H i g h P e r f o r m a n c e C M O S E P R O M Physical Dimensions inches (millimeters)(Continued)32-Lead Plastic Leaded Chip Carrier (PLCC)Order Number NM27C256VXXXNS Package Number VA32ALIFE SUPPORT POLICYNATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION As used herein1 Life support devices or systems are devices or2 A critical component is any component of a life systems which (a)are intended for surgical implantsupport device or system whose failure to perform can into the body or (b)support or sustain life and whosebe reasonably expected to cause the failure of the life failure to perform when properly used in accordancesupport device or system or to affect its safety or with instructions for use provided in the labeling caneffectiveness be reasonably expected to result in a significant injuryto the userNational SemiconductorNational Semiconductor National Semiconductor National Semiconductor National Semiconductores National Semiconductor CorporationGmbH Japan Ltd Hong Kong Ltd Do Brazil Ltda (Australia)Pty Ltd 2900Semiconductor Drive Livry-Gargan-Str 10Sumitomo Chemical 13th Floor Straight Block Rue Deputado Lacorda Franco Building 16。
单片机复习资料
一、选择题1、89S51汇编语言指令格式中，唯一不可缺少的部分是。
A．标号 B．操作码 C．操作数 D．注释2、89S51的立即寻址方式中，立即数前面。
A．应加前缀“/：”号 B．不加前缀号C．应加前缀“@”号 D．应加前缀“#”号3. 采用补码形式表示一个带符号8位二进制数，它能表示的整数范围是（）。
A. －127～＋128B. －127～＋127C. －128～＋128D. －128～＋1274.当MCS-51复位时，下面说法正确的是（）。
A、 PC=0000HB、 SP=00HC、 P1=00HD、 P0=00H5、PSW=18H时，则当前工作寄存器是（）。
A、 0组B、 1组C、 2组D、 3组6、在编程中使用伪指令的目的是。
A．指示和引导如何进行手工汇编 B．指示和引导编译程序如何汇编C．指示和引导汇编程序进行汇编 D．指示和引导程序员进行汇编7、将P1口的高4位保留不变,低4位取反,可用指令。
A．ANL P1,#0F0H B．ORL P1,#0FHC．XRL P1,#0FH D．以上三句都不行8、当ALE信号有效时，表示（）。
A、从ROM中读取数据B、从P0口可靠地送出低8位地址C、从P0口送出数据D、从RAM中读取数据9. 一般来讲89S51最大能扩展外部程序存储器的容量为（）。
A. 256KB. 32KC. 16KD. 64K10、89S51单片机中，唯一一个用户可使用的16位寄存器是（）。
A、PSWB、ACCC、SPD、DPTR11. 使用89C51时，EA引脚应（）。
A. 接低电平B.接高电平C.空D.作为I/O输入口12、下列完成89S51单片机内部RAM数据传送的指令是。
A．MOVX A，@DPTR B．MOVC A, @A+PCC．MOV A，#data D．MOV direct,direct13、89S51的立即寻址的指令中，立即数就是。
A．放在寄存器R0中的内容 B．放在程序中的常数C．放在A中的内容 D．放在B中的内容14. 89S51单片机中，决定程序执行顺序的寄存器是（）。
汽车电子常用芯片型号代换资料
汽车电子常用芯片型号代换资料汽车电子常用芯片型号代换资料汽车电子, 存储器标志印字芯片功能代换型号BOSCH3003930061 ADC0809B22AN 存储器 93C06B34AB 存储器 24C02B43AB 存储器 24C02B46AJ 存储器 24C02B49AJ 存储器 24C02B52AP 存储器 24C02B54AH 存储器 24C02B57120 存储器 27C64B57324 存储器 2732AB57347 存储器 27C64B57423 存储器 27C256B57449 74HC74B57477 存储器 27C64B57519 存储器 27C64B57581 74HC573B57604 存储器 27C256B57605 存储器 27256B57607 存储器 27C128B57610 存储器 27C128B57618 存储器 87C257B57618 存储器 87C64B57625 存储器 2764AB57654 存储器 27C256B57701 存储器 27C256B57733 4x位开关 TLE4211, TLE6220 B57764 存储器 87C257 B57764 存储器 87C64B57771 存储器 27C256B57922 存储器 87C257B57960 存储器 27C256B57995 存储器 TMS27C256B58014 存储器 27C256B58038 存储器 27C256B58094 存储器 27C510B58126 存储器 27C010B58127 存储器 27C512B58150 存储器 87C257B58157 存储器 27C512B58185 存储器 87C257B58196 存储器 NS93C46B58234 存储器 27C256B58235 存储器 87C257B58239 存储器 27C512B58240 6 x位开关 TLE4216G, TLE4226GB58241 4 x位开关 TLE4214G, TLE6225B58243 存储器 CJ87BC6QGB58244 I87M12B58258 存储器 24C02B58265 控制器 CAN控制器??B58275 存储器 27C1024B58286 控制器 SAB80C166B58293 存储器 27C512B58331 存储器 28F010B58380 存储器 24C02B58381 存储器 AM28F512B58399 存储器 AM29F010B58400 存储器 87C510B58424 存储器 27C512B58502 ABS,ASR系统IC TLE5200G, TLE6210G B58504 ABS,ASR系统IC TLE5201G, TLE6211G B58505 2 x位开关TLE5225G, TLE6215GB58517 存储器 28F020B58533 存储器 27C4096B58539 存储器 27C256B58541 存储器 27C512B58542 存储器 27C512B58543 存储器 27C512B58544 存储器 27C1001B58545 存储器 87C257B58546 存储器 87C510B58547 存储器 27C1001B58548 存储器 TMS27PC210 = 27C1024B58550 存储器 27C512B58590 AS87C196ENB58637 4 x位开关 TLE5226G, TLE6216GB58639 存储器 87PC110B58732 4 x位开关 TLE5216G, TLE6220B58755 存储器 AM29F200B58768 存储器 AM29F400ABB58791 存储器 AM29F200ABB58813 存储器 93C56B58911 存储器 TMS27C010AB58335 存储器 AT28C64BB58601 存储器 AM29F200BB9411 存储器 AM27C256DELCO08393 功放 TDA7372A96405 功放 TDA7376B9355092 存储器 24C049355093 存储器 24C0816124342 功放 TDA736016175974 RDS解调器SAA6579 16219796 功放TDA7454 100% , not TDA7384 16233541 存储器 M27C256BPIONEERPA2024A 电源 TA8244HPA3002 功放 HA1397PA3005 功放 HA1384PA3027A 功放 HA13150APA3029A 功放 HA13151PA3029B 功放 HA13151PAL001A 功放 TDA7394PAL002A 功放 TDA7394PAL003A 功放 TDA7384APAL005A 功放 TDA7385PAL006A 功放 TDA7560PAL007A 功放 TDA7560PAU001A 功放 HA13151VISTEON0022FBCAC 电源 TL751M100040FBCAC 电源 TL751M1077002 I2C存储器 24C167008FB 电源 78L0570001BB RDS解调器 TDA733070001SE RDS解调器 TDA733070001RR RDS解调器 TDA7330 ??70002FE 音频处理器 TDA731170003AB 功放 TDA200370003SC FREQ. SYNTH.70003SE RDS解调器 TDA733070005EB PLL立体声译码器 TDA159170005EH 音频处理器 TDA7340P70006SE 音频处理器 TDA734070008AB 功放 TDA736070009AB 功放 11 pins70010AB 功放 TDA735070010BB 双运放 TDA342070010FB 电源 TL751M1070011AB 功放 TDA7350with some modifications 70011SB 音频处理器 TDA152470014BB 控制放大器 LM83770016SE 音频处理器 TDA7460N70017AB 驱动放大 TDA723770017FB 电源 TA1483270019SB 音频处理器70023AB 功放 TDA739170024AB 功放 TDA737570024SB 杜比电路 TEA065570025SB AMS LA201070026SB FRONT END70027SB70028SB IF/DET70029SB 音频处理器 TDA730670032AB 前置放大 TDA1523 ??70033BB 控制放大器 LM83770034AB 功放 TDA1519B70039AB 功放 TDA8566Q70042FB 电源 L084, L495370043AB TEA0675 or TDA8586Q70045SB 杜比电路 TEA067570047SB 杜比电路 TEA0675T70052AB 功放 TDA8586Q70082FB 电源70530FB 电源70670FS 前置放大 TEA0676T71005DC LCD显示驱动 PCF857771005TB 多频调制 DS36277N7100130 PCF8576TN700700CFFB000 电源 PHIL, HSOP-20 F2DF-14A652-EA 电源TL751M10SONY159-00 功放 HA13151160-00 功放 HA13151180-00 功放 HA13152260-41 功放 HA13151260-77 功放 HA13150A279-82 功放 HA13151279-87 功放 HA13151279-89 功放 HA13152360-47 功放 HA13153365-41 功放 HA13155368-11 电子音量 LC75372E 369-41 功放 HA13155369-42 功放 HA13153426-49 功放 HA13155448-48 功放 HA13157448-61 功放 HA13156490-48 功放 HA13158PICKUPSOPTIMA-150S JVC OPTIMA-6S KSP-1H KENWOOD KSS-213F RAE0142Z MATSUSHITA RAE0144 1121 SONY KSS-210A KSS-168A SONY KSS-320BKSS-412A SONY KSS-401AKSS-401A SONY KSS-412AKSS-313A SONY KSS-313CKSS-240 SONY KSS-390KSS-314A SONY KSS-313A SOH-AAU SAMSUNG KSS-213KSS-540A SONY KSS-541AKSS-520A SONY KSS-521AMOTOROLAMC13304T3 功放 TA8215MC13306T3S 功放 TA8205MC13309T3 功放 TA8215MC13320T3 功放CHRYSLER 4632512 音频处理器TDA7314S 4651311 功放TDA1553Q4391943 74HC004392073 27C2564392075 74HC144517571 74HC3734517572 74HC74 ??4632511 TDA1591T4632858 TDA3601AQ4632990 M28F1024651350 L9222AOTHERSM851G OKI , 存储器 93C4616811G OKI , 存储器 93C4616911 OKI , 存储器 59C11 ADxxxx YAZAKI, 存储器 93C46 8-bit ABxxxx YAZAKI, 存储器 ER59C11标志印字芯片功能代换型号BOSCH3003930061 ADC0809B22AN 存储器 93C06B34AB 存储器 24C02B43AB 存储器 24C02B46AJ 存储器 24C02B49AJ 存储器 24C02B52AP 存储器 24C02B54AH 存储器 24C02B57120 存储器 27C64B57324 存储器 2732AB57347 存储器 27C64B57423 存储器 27C256B57449 74HC74B57477 存储器 27C64B57519 存储器 27C64B57581 74HC573B57604 存储器 27C256B57605 存储器 27256B57607 存储器 27C128B57610 存储器 27C128B57618 存储器 87C64B57625 存储器 2764AB57654 存储器 27C256B57696 存储器 27C256B57701 存储器 27C256B57733 4x位开关 TLE4211, TLE6220B57764 存储器 87C257B57764 存储器 87C64B57771 存储器 27C256B57808 存储器 27C256B57922 存储器 87C257B57960 存储器 27C256B57995 存储器 TMS27C256B58014 存储器 27C256B58038 存储器 27C256B58094 存储器 27C510B58126 存储器 27C010B58127 存储器 27C512B58150 存储器 87C257B58157 存储器 27C512B58185 存储器 87C257B58196 存储器 NS93C46B58234 存储器 27C256B58235 存储器 87C257B58239 存储器 27C512B58240 6 x位开关TLE4216G, TLE4226G B58241 4 x位开关TLE4214G, TLE6225 B58243 存储器 CJ87BC6QGB58244 I87M12B58258 存储器 24C02B58265 控制器 CAN控制器??B58275 存储器 27C1024B58286 控制器 SAB80C166B58293 存储器 27C512B58331 存储器 28F010B58380 存储器 24C02B58381 存储器 AM28F512B58399 存储器 AM29F010B58400 存储器 87C510B58424 存储器 27C512B58502 ABS,ASR系统IC TLE5200G, TLE6210G B58504 ABS,ASR系统IC TLE5201G, TLE6211G B58505 2 x位开关TLE5225G, TLE6215GB58517 存储器 28F020B58530 存储器 AM29F010B58533 存储器 27C4096B58539 存储器 27C256B58541 存储器 27C512B58542 存储器 27C512B58543 存储器 27C512B58544 存储器 27C1001B58545 存储器 87C257B58546 存储器 87C510B58547 存储器 27C1001B58548 存储器 TMS27PC210 = 27C1024B58550 存储器 27C512B58590 AS87C196ENB58637 4 x位开关 TLE5226G, TLE6216GB58639 存储器 87PC110B58732 4 x位开关 TLE5216G, TLE6220B58755 存储器 AM29F200B58768 存储器 AM29F400ABB58791 存储器 AM29F200ABB58813 存储器 93C56B58911 存储器 TMS27C010AB58335 存储器 AT28C64BB58601 存储器 AM29F200BB9411 存储器 AM27C256DELCO08393 功放 TDA7372A9355092 存储器 24C049355093 存储器 24C0816124342 功放 TDA736016175974 RDS解调器SAA6579 16219796 功放TDA7454 100% , not TDA7384 16233541 存储器 M27C256BPIONEERPA2024A 电源 TA8244HPA3002 功放 HA1397PA3005 功放 HA1384PA3027A 功放 HA13150APA3029A 功放 HA13151PA3029B 功放 HA13151PAL001A 功放 TDA7394PAL002A 功放 TDA7394PAL003A 功放 TDA7384APAL005A 功放 TDA7385PAL006A 功放 TDA7560PAL007A 功放 TDA7560PAU001A 功放 HA13151VISTEON0022FBCAC 电源 TL751M100040FBCAC 电源 TL751M1077002 I2C存储器 24C167008FB 电源 78L0570001BB RDS解调器 TDA733070001SE RDS解调器 TDA733070001RR RDS解调器 TDA7330 ??70002FE 音频处理器 TDA731170003AB 功放 TDA200370003SC FREQ. SYNTH.70003SE RDS解调器 TDA733070005EB PLL立体声译码器 TDA159170005EH 音频处理器 TDA7340P70006SE 音频处理器 TDA734070009AB 功放 11 pins70010AB 功放 TDA735070010BB 双运放 TDA342070010FB 电源 TL751M1070011AB 功放 TDA7350with some modifications 70011SB 音频处理器 TDA152470014BB 控制放大器 LM83770016SE 音频处理器 TDA7460N70017AB 驱动放大 TDA723770017FB 电源 TA1483270019SB 音频处理器70023AB 功放 TDA739170024AB 功放 TDA737570024SB 杜比电路 TEA065570025SB AMS LA201070026SB FRONT END70027SB70028SB IF/DET70029SB 音频处理器 TDA730670032AB 前置放大 TDA1523 ??70033BB 控制放大器 LM83770034AB 功放 TDA1519B70039AB 功放 TDA8566Q70042FB 电源 L084, L495370043AB TEA0675 or TDA8586Q70045SB 杜比电路 TEA067570047SB 杜比电路 TEA0675T70052AB 功放 TDA8586Q70082FB 电源70530FB 电源70670FS 前置放大 TEA0676T71005DC LCD显示驱动 PCF857771005TB 多频调制 DS36277N7100130 PCF8576TN700700CFFB000 电源 PHIL, HSOP-20F2DF-14A652-EA 电源 TL751M10SONY159-00 功放 HA13151160-00 功放 HA13151180-00 功放 HA13152260-41 功放 HA13151260-77 功放 HA13150A279-82 功放 HA13151279-87 功放 HA13151279-89 功放 HA13152360-47 功放 HA13153365-41 功放 HA13155368-11 电子音量 LC75372E 369-41 功放 HA13155369-42 功放 HA13153426-49 功放 HA13155448-48 功放 HA13157448-61 功放 HA13156490-48 功放 HA13158PICKUPSOPTIMA-150S JVC OPTIMA-6SKSP-1H KENWOOD KSS-213F RAE0142Z MATSUSHITA RAE0144 1121 SONY KSS-210AKSS-168A SONY KSS-320BKSS-412A SONY KSS-401AKSS-401A SONY KSS-412AKSS-313A SONY KSS-313CKSS-240 SONY KSS-390KSS-314A SONY KSS-313ASOH-AAU SAMSUNG KSS-213KSS-540A SONY KSS-541AKSS-520A SONY KSS-521AMOTOROLAMC13304T3 功放 TA8215MC13306T3S 功放 TA8205MC13309T3 功放 TA8215MC13320T3 功放CHRYSLER4632512 音频处理器 TDA7314S4651311 功放 TDA1553Q4391943 74HC004392073 27C2564392075 74HC144517571 74HC3734517572 74HC74 ??4632511 TDA1591T4632858 TDA3601AQ4632990 M28F1024651350 L9222AOTHERSM851G OKI , 存储器 93C4616811G OKI , 存储器 93C4616911 OKI , 存储器 59C11 ADxxxx YAZAKI, 存储器 93C46 8-bit ABxxxx YAZAKI, 存储器 ER59C11第1部分汽车音响常用集成电路1.1 收音系统电路1.1.1 AN7222 AM调谐，AM/FM中频放大电路1.1.2 AN7254 FM前端电路1.1.3 AN7463S 带消噪的FM立体声解码器 1.1.4 BA403 FM中频放大器1.1.5 BA1310 锁相环式FM立体声解码器1.1.6 BA1332/BA1332L 锁相环式FM立体声解码器1.1.7 BA1350 带噪声抑制的FM立体声解码器 1.1.8 BA1405/BA1405F FM立体声调制器1.1.9 CX20029 AM/FM立体声收音机电路 1.1.10 CXA1101P/CXA1101M 双通道杜比B型降噪电路1.1.11 CXA1102P/CXA1102M 双通道杜比B型降噪电路1.1.12 CXA1238M/CXA1238S AM/FM立体声收音电路1.1.13 HA11219 FM噪声抑制电路1.1.14 HA12134A 双通道杜比B型降噪电路 1.1.15 KA2244 FM 中频放大器1.1.16 KA2261 锁相环式FM立体声解码器1.1.17 KB4409 锁相环式FM立体声解码器1.1.18 KIA6010SN FM噪声抑制电路1.1.19 LA1130 AM调谐电路1.1.20 LA1132 AM调谐电路1.1.21 LA1135 AM调谐电路1.1.22 LA1140 FM中频放大器1.1.23 LA1175 FM调谐电路1.1.24 LA1862M FM立体声解码器1.1.25 LA2110 FM消噪电路1.1.26 LA3365 锁相环式FM立体声解码器 1.1.27 LA3370 锁相环式FM立体声解码器1.1.28 LA3375 锁相环式FM立体声解码器1.1.29 LA3430 带消噪功能的锁相环式FM立体声解码器1.1.30 LB3500 FM本振频率1/8分频器1.1.31 LC7218/LC7218M/LC7218JM 电子调谐PLL频率合成器1.1.32 LC7219/LC7219M/LC7219JM 电子调谐PLL频率合成器1.1.33 LC72131/LC72131M AM/FM PLL频率合成器1.1.34 LC72146/LC72146M/LC72146V 电子调谐PLL频率合成器1.1.35 LC72191/LC72191M/LC72191JM 立体声电子调谐PLL频率合成器1.1.36 LC72722/LC72722M/LC72722PM 单片RDS信号处理系统1.1.37 LM7001/LM7001M 电子调谐辅助微处理器1.1.38 TA7343AP/TA7343AF 锁相环式FM立体声解码器1.1.39 TA7358P/AP FM调谐电路1.1.40 TA7640AP AM调谐，AM/FM中频放大器 1.1.41 TA8122N/TA8122F 3V AM/FM调谐电路1.1.42 TA8127N/TA8127F 3V AM/FM调谐电路1.1.43 TA8132N/TA8132F AM/FM中放及立体声解码器1.1.44 TA8164P 3V AM/FM收音机电路1.1.45 TC9246F/TC9246P 数字音响锁相环电路1.1.46 TD7104P/TD7104F 数字合成调谐器用ECL预引比例器1.1.47 TDA1579/TDA1579T 交通告警无线传输解码器1.1.48 TEA0652 杜比B/C型降噪电路1.1.49 TEA5560 FM中频放大器1.1.50 μPB553AC 150M Hz低功耗分频电路1.1.51 μPC1167C2 FM中频放大器1.1.52 μPC1171C AM调谐电路1.1.53 μPC1191V AM调谐电路1.1.54 μPC1200V FM中频放大器1.1.55 μPC1215V AM电子调谐电路1.2 磁带放音系统电路1.2.1 AN6263N 磁带暂停检测电路1.2.2 BA338/BA338L 自动选曲电路1.2.3 BA3430S/BA3430F/BA3430FS 带静噪检测的立体声前置放大器1.2.4 BA6219B/BA6219BFP Y 双向电机驱动器1.2.5 BA6285FP/BA6285FS 双向电机驱动器 1.2.6 CXA2509AQ 带选曲功能的均衡放大器 1.2.7 D7784P 双声道磁头选择开关、自动翻转及放大器1.2.8 LA2000/LA2000S 单曲自动选曲电路1.2.9 LB1641 双向电机驱动器1.2.10 LB1649 双桥式电机驱动器1.2.11 LB1836M 桥式电机驱动器1.2.12 MM1322XFBE 电机驱动控制电路1.2.13 TA7291P/TA7291S/TA7291F 电机驱动控制电路1.2.14 μPC1470H 电机速度控制器1.3 音频处理电路1.3.1 AN214 4.4W音频功率放大器1.3.2 AN7168 5.8W×2双通道音频功率放大器1.3.3 AN7178 5.7W×2双通道音频功率放大器1.3.4 AN7310N 立体声双通道音频前置放大器1.3.5 AN7311 立体声双通道音频前置放大器1.3.6 BA328双通道音频前置放大器1.3.7 BA5406 5W×2音频功率放大器1.3.8 CXA1646Q 电子音量控制电路1.3.9 CXA1946AQ 电子音量控制电路1.3.10 HA13001 5.5W×2(BTL 17.5W)音频功率放大器1.3.11 HA13119 5.5W×2音频功率放大器1.3.12 HA13150A 21W×4 BTL音频功率放大器1.3.13 HA13151/HA13151A 14W×4 BTL音频功率放大器1.3.14 HA 13153 15W×4 BTL音频功率放大器 1.3.15 HA 13155 33W×4 B TL音频功率放大器1.3.16 LA2900M 双通道高电平线路放大器1.3.17 LA3160 双通道音频前置放大器1.3.18 LA4440 6W×2(BTL 19W)音频功率放大器1.3.19 LA4445 5.5W×2音频功率放大器1.3.20 LA4743B 45W×4(BTL 19W)音频功率放大器1.3.21 LA47501 50W×4(BTL 19W)音频功率放大器1.3.22 LC7538NM 电子音色控制电路1.3.23 LC75373ED 电子音量控制电路1.3.24 LC75383ED 电子音量控制电路1.3.25 M51522AL 双通道音频前置放大器1.3.26 TA7227P 5.5W×2音频功率放大器 1.3.28 TA7240P/TA7240AP 5.8W×2音频功率放大器1.3.29 TA7270P 5.8W×2音频功率放大器 1.3.30 TA7325P 双通道音频前置放大器。
2764芯片
2764资料常见的EPROM芯片有Intel2761（2K*8）、2732（4K*8）、2764（8K*8）、27128（16K*8）、2 7256、27512。
2764是8K*8字节的紫外线镲除、电可编程只读存储器，单一+5V供电，工作电流为75mA，维持电流为35mA，读出时间最大为250nS，28脚双列直插式封装。
各引脚的含义为：A0-A12为13根地址线，可寻址8K字节；O0-O7为数据输出线；CE为片选线；OE为数据输出选通线；PGM为编程脉冲输入端；Vp p是编程电源；Vcc是主电源。
正常工作（只读）时，Vpp=Vcc=+5V,～PG M=+5V。
编程时，Vpp＝+25V（高压），～PGM端加入宽度为50ms的负脉冲。
EPROM电路EPROM 2764的外部引线如图所示。
这是一块8K×8bit 的EPROM芯片，它的引线与SRAM芯片6264是兼容的。
这给使用者带来很大方便。
因为在软件调试过程中，程序经常需要修改，此时可将程序先放在6264中，读写修改都很方便。
调试成功后，将程序固化在2764中，由于它与 6264的引脚兼容，所以可以把2764直接插在原6264的插座上。
这样，程序就不会由于断电而丢失。
下面介绍2764各引脚的含义:① A0一A12：13根地址输入线。
用于寻址片内的8K个存储单元。
② D0～D7：8根双向数据线，正常工作时为数据输出线。
编程时为数据输入线。
③OE：输出允许信号。
低电平有效。
当该信号为0时，芯片中的数据可由D0～D7端输出。
④CE：选片信号。
低电平有效。
当该信号为0时表示选中此芯片。
．⑤PGM:编程脉冲输入端。
对EPROM编程时，在该端加上编程脉冲。
读操作时该信号为1。
⑥VPP：编程电压输入端。
编程时应在该端加上编程高电压，不同的芯片对VPP的值要求的不一样，可以是+12.5V，+15V，+21V，+25V等。
说明：EPROM的一个重要优点是可以擦除重写，而且允许擦除的次数超过上万次。
EPROM27256
Figure 1. Logic DiagramM27256NMOS 256K (32K x 8) UV EPROMFAST ACCESS TIME: 170nsEXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAMFAST PROGRAMMING ALGORITHM ELECTRONIC SIGNATURE PROGRAMMING VOLTAGE: 12VDESCRIPTIONThe M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits.The M27256 is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by following the programmingprocedure.Table 1. Signal NamesMarch 19951/10Figure 2. DIP Pin ConnectionsNote: Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the SGS-THOMSON SURE Program and other relevant quality documents.Table 2. Absolute Maximum RatingsDEVICE OPERATIONThe eight modes of operations of the M27256 are listed in the Operating Modes Table. A single 5V power supply is required in the read mode. All inputs are TTL levels except for V PP and 12V on A9for Electronic Signature.Read ModeThe M27256 has two control functions, both of which must be logically satisfied in order to obtain data at the outputs. Chip Enable (E) is the power control and should be used for device selection.Output Enable (G) is the output control and should be used to gate data to the output pins, inde-pendent of device selection. Assuming that the addresses are stable, address access time (t AVQV )is equal to the delay from E to output (t ELQV ). Data is available at the outputs after the falling edge of G, assuming that E has been low and the ad-dresses have been stable for at least t AVQV -t GLQV .Standby ModeThe M27256 has a standby mode which reduces the maximum active power current from 100mA to 40mA. The M27256 is placed in the standby mode by applying a TTL high signal to the E input. When in the standby mode, the outputs are in a high impedance state, independent of the G input.Two Line Output ControlBecause EPROMs are usually used in larger mem-ory arrays, this product features a 2 line control function which accommodates the use of multiple memory connection. The two line control function allows:a.the lowest possible memory power dissipation,plete assurance that output bus contention will not occur.For the most efficient use of these two control lines,E should be decoded and used as the primary device selecting function, while G should be made a common connection to all devices in the array and connected to the READ line from the system control bus.This ensures that all deselected memory devices are in their low power standby mode and that the output pins are only active when data is required from a particular memory device.System ConsiderationsThe power switching characteristics of fast EPROMs require careful decoupling of the devices.The supply current, I CC , has three segments that are of interest to the system designer : the standby current level, the active current level, and transient current peaks that are produced by the falling and rising edges of E. The magnitude of the transient current peaks is dependent on the capacitive and inductive loading of the device at the output. The associated transient voltage peaks can be sup-pressed by complying with the two line output control and by properly selected decoupling ca-pacitors. It is recommended that a 1µF ceramic capacitor be used on every device between V CC and V SS . This should be a high frequency capacitor of low inherent inductance and should be placed as close to the device as possible. In addition, a 4.7µF bulk electrolytic capacitors should be used between V CC and V SS for every eight devices. The bulk capacitor should be located near the power supply connection point. The purpose of the bulk capacitor is to overcome the voltage drop caused by the inductive effects of PCB traces.ProgrammainWhen delivered, (and after each erasure for UV EPROM), all bits of the M27256 are in the “1" state.Data is introduced by selectively programming ”0s"into the desired bit locations. Although only “0s” will be programmed, both “1s” and “0s” can be present in the data word. The only way to change a “0" to a ”1" is by ultraviolet light erasure. The M27256 is in the programming mode when V PP input is at grammed is applied 8 bits in parallel to the data output pins. The levels required for the address and data inputs are TTL.Fast Programming AlgorithmFast Programming Algorithm rapidly programs M27256 EPROMs using an efficient and reliable method suited to the production programming en-vironment. Programming reliability is also ensured as the incremental program margin of each byte is continually monitored to determine when it has been successfully programmed. A flowchart of the M27256 Fast Programming Algorithm is shown on the Flowchart. The Fast Programming Algorithm utilizes two different pulse types : initial and over-program. The duration of the initial E pulse(s) is 1ms, which will then be followed by a longer over-program pulse of length 3ms by n (n is equal to the number of the initial one millisecond pulses appliedIH IL IDTable 3. Operating ModesTable 4. Electronic SignatureDEVICE OPERATION(cont’d)Figure 3. AC Testing Input Output WaveformsInput Rise and Fall Times ≤ 20ns Input Pulse Voltages0.45V to 2.4V Input and Output Timing Ref. Voltages0.8V to 2.0VAC MEASUREMENT CONDITIONSFigure 4. AC Testing Load CircuitNote that Output Hi-Z is defined as the point where datais no longer driven.Note: 1.Sampled only, not 100% tested.Table 5. Capacitance (1) (T A = 25 °C, f = 1 MHz )Figure 5. Read Mode AC WaveformsTable 7A. Read Mode AC Characteristics (1)(T A = 0 to 70 °C or –40 to 85 °C; V CC = 5V ± 5% or 5V ± 10%; V PP = V CC)Note: 1.V CC must be applied simultaneously with or before V PP and removed simultaneously or after V PP .Table 6. Read Mode DC Characteristics (1)(T A = 0 to 70 °C or –40 to 85 °C; V CC = 5V ± 5% or 5V ± 10%; V PP = V CC)CC PP PP 2.Sampled only, not 100% tested.Table 7B. Read Mode AC Characteristics (1)(T A = 0 to 70 °C or –40 to 85 °C; V CC = 5V ± 5% or 5V ± 10%; V PP = V CC )Note. 1. V CC must be applied simultaneously with or before V PP and removed simultaneously or after V PP .Table 8. Programming Mode DC Characteristics (1)(T A = 25 °C; V CC = 6V ± 0.25V; V PP = 12.5V ±0.3V)CC PP PP 2. The Initial Program Pulse width tolerance is 1 ms ± 5%.3. The length of the Over-program Pulse varies from 2.85 ms to 78.95 ms, depending on the multiplication value of the iteration counter.4. Sampled only, not 100% tested.Table 9. Programming Mode AC Characteristics (1)(T A = 25 °C; V CC = 6V ± 0.25V; V PP = 12.5V ± 0.3V)Figure 6. Programming and Verify Modes AC WaveformsFigure 7. Programming Flowchart to a particular M27256 location), before a correct verify occurs. Up to 25 one-millisecond pulses per byte are provided for before the over program pulse is applied. The entire sequence of program pulses and byte verifications is performed at V CC = 6V and V PP = 12.5V.When the Fast Programming cycle has been com-pleted, all bytes should be compared to the original data with V CC = 5V and V PP = 5V.Program InhibitProgramming of multiple M27256s in parallel with different data is also easily accomplished. Except for E, all like inputs (including G) of the parallel M27256 may be common. A TTL low pulse applied to a M27256’s E input, with V PP = 12.5V, will program that M27256. A high level E input inhibits the other M27256s from being programmed.Program VerifyA verify should be performed on the programmed bits to determine that they were correctly pro-grammed. The verify is accomplished with E = V IH ,G = V IL and V PP = 12.5V.Optional VerifyThe optional verify may be performed instead of the verify mode. It is performed with G = V IL , E = V IL (as opposed to the standard verify which has E =DEVICE OPERATION (cont’d)V IH ), and V PP = 12.5V. The outputs will be in a Hi-z state according to the signal presented to G. There-fore, all devices with V PP = 12.5V and G = V IL will present data on the bus independent of the E state.When parallel programming several devices which share the common bus, V PP should be lowered to V CC (6V) and the normal read mode used to exe-cute a program verify.Electronic SignatureThe Electronic Signature mode allows the reading out of a binary code from an EPROM that will identify its manufacturer and type. This mode is intended for use by programming equipment for the purpose of automatically matching the device to be programmed with its corresponding programming algorithm. This mode is functional in the 25°C ± 5°C ambient temperature range that is required when programming the M27256. To activate this mode,the programming equipment must force 11.5V to 12.5V on address line A9 of the M27256. Two identifier bytes may then be sequenced from the device outputs by toggling address line A0 from V IL to V IH . All other address lines must be held at V IL during Electronic Signature mode. Byte 0 (A0 = V IL )represents the manufacturer code and byte 1 (A0= V IH ) the device identifier code. For the SGS-THOMSON M27256, these two identifier bytes are given below.ERASURE OPERATION (applies to UV EPROM)The erasure characteristic of the M27256 is such that erasure begins when the cells are exposed to light with wavelengths shorter than approximately 4000 Å. It should be noted that sunlight and some type of fluorescent lamps have wavelengths in the 3000-4000 Å range. Research shows that constant exposure to room level fluorescent lighting could erase a typical M27256 in about 3 years, while it would take approximately 1 week to cause erasure when exposed to direct sunlight. If the M27256 is to be exposed to these types of lighting conditions for extended periods of time, it is suggested that opaque lables be put over the M27256 window to prevent unintentional erasure. The recommended erasure procedure for the M27256 is exposure to short wave ultraviolet light which has wavelength 2537 Å. The integrated dose (i.e. UV intensity x exposure time) for erasure should be a minimum of 15 W-sec/cm 2. The erasure time with this dosage is approximately 15 to 20 minutes using an ultra-violet lamp with 12000 µW/cm 2 power rating. The M27256 should be placed within 2.5cm (1 inch) of the lamp tubes during the erasure. Some lamps have a filter on their tubes which should be re-moved before erasure.-1170 ns, 5V ±5% -2200 ns, 5V ±5% blank 250 ns, 5V±5% -3300 ns, 5V ±5% -4400 ns, 5V ±5% -20200 ns, 5V ±10%-25250 ns, 5V ±10%FFDIP28W10 to 70 °C 6–40 to 85 °CORDERING INFORMATION SCHEMEFor a list of available options (Speed, V CC Tolerance, Package, etc) refer to the current Memory Shortform catalogue.For further information on any aspect of this device, please contact SGS-THOMSON Sales Office nearest to you.DEVICE OPERATION (cont’d)Drawing is not to scaleInformation furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.© 1995 SGS-THOMSON Microelectronics - All Rights ReservedSGS-THOMSON Microelectronics GROUP OF COMPANIESAustralia - Brazil - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.。
2764资料
2764资料2009-05-20 12:002764资料常见的EPROM芯片有Intel2761（2K*8）、2732（4K*8）、2764（8K *8）、27128（16K*8）、27256、27512。
2764是8K*8字节的紫外线镲除、电可编程只读存储器，单一+5V供电，工作电流为75mA，维持电流为35mA，读出时间最大为250nS，28脚双列直插式封装。
各引脚的含义为：A0-A12为13根地址线，可寻址8K字节；O0-O7为数据输出线；CE为片选线；OE为数据输出选通线；PGM为编程脉冲输入端；Vpp是编程电源；Vcc是主电源。
正常工作（只读）时，Vpp=Vcc=+5V,～PG M=+5V。
编程时，Vpp＝+25V（高压），～PGM端加入宽度为50ms的负脉冲。
EPROM电路EPROM 2764的外部引线如图所示。
这是一块8K×8bit的EPROM芯片，它的引线与SRAM芯片6264是兼容的。
这给使用者带来很大方便。
因为在软件调试过程中，程序经常需要修改，此时可将程序先放在6264中，读写修改都很方便。
调试成功后，将程序固化在2764中，由于它与6264的引脚兼容，所以可以把2764直接插在原6264的插座上。
这样，程序就不会由于断电而丢失。
l下面介绍2764各引脚的含义:① A0一A12：13根地址输入线。
用于寻址片内的8K个存储单元。
② D0～D7：8根双向数据线，正常工作时为数据输出线。
编程时为数据输入线。
③OE：输出允许信号。
低电平有效。
当该信号为0时，芯片中的数据可由D0～D7端输出。
④CE：选片信号。
低电平有效。
当该信号为0时表示选中此芯片。
．⑤PGM:编程脉冲输入端。
对EPROM编程时，在该端加上编程脉冲。
读操作时该信号为1。
⑥VPP：编程电压输入端。
编程时应在该端加上编程高电压，不同的芯片对VPP的值要求的不一样，可以是+12.5V，+15V，+21V，+25V等。
LM2726中文资料
LM2725/LM2726High Speed Synchronous MOSFET DriversGeneral DescriptionThe LM2725/LM2726is a family of dual MOSFET drivers that can drive both the top MOSFET and bottom MOSFET in a push-pull structure simultaneously.It takes a logic level PWM input and splits it into two complimentary signals with a typical 20ns dead time in between.The built-in shoot-through protection circuitry prevents the top and bot-tom FETs from turning on simultaneously.With a bias volt-age of 5V,the peak sourcing and sinking current for each driver of the LM2725is about 1.2A and that of the LM2726is about 3A.In an SO-8package,each driver is able to handle 50mA average current.Input UVLO (Under-Voltage-Lock-Out)ensures that all the driver outputs stay low until the supply rail exceeds the power-on threshold during system power on,or after the supply rail drops below power-on threshold by a specified hysteresis during system power down.The cross-conduction protection circuitry de-tects both the driver outputs and will not turn on a driver until the other driver output is low.The top gate bias voltageneeded by the top MOSFET can be obtained through an external bootstrap structure.Minimum pulse width is as low as 55ns.Featuresn High peak output currentn Adaptive shoot-through protectionn 36V SW pin absolute maximum voltage n Input Under-Voltage-Lock-Out n Typical 20ns internal delay nPlastic 8-pin SO packageApplicationsn High Current DC/DC Power Supplies n High Input Voltage Switching Regulators n MicroprocessorsTypical ApplicationConnection DiagramDS200072-18-Lead Small Outline PackageDS200072-2Top ViewNovember 2000LM2725/LM2726High Speed Synchronous MOSFET Drivers©2000National Semiconductor Corporation Ordering InformationOrder NumberPackage Type NSC Package DrawingSupplied As LM2725LM2725M M08A95Units/Rail LM2725MX 2500Units/Reel LM2726LM2726M 95Units/Rail LM2726MX2500Units/ReelPin DescriptionPin Name Function1SW Top driver return.Should be connected to the common node of top and bottom FETs 2HG Top gate drive output3CBOOT Bootstrap.Accepts a bootstrap voltage for powering the high-side driver4PWM_IN Accepts a 5V-logic control signal 5EN Chip Enable6VCC Connect to +5V supply 7LG Bottom gate drive output 8GNDGroundBlock DiagramDS200072-4L M 2725/L M 2726 2Absolute Maximum Ratings(Note1)If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.VCC7.5V CBOOT42V CBOOT to SW8V SW to PGND36V Junction Temperature+150˚C Power Dissipation(Note2)720mWStorage Temperature−65˚to150˚C ESD SusceptibilityHuman Body Model(Note3)1kV Soldering Time,Temperature10sec.,300˚COperating Ratings(Note1)VCC4V to7V Junction Temperature Range0˚to125˚CElectrical CharacteristicsLM2725VCC=CBOOT=5V,SW=GND=0V,unless otherwise specified.Typicals and limits appearing in plain type apply for T A=T J=+25˚C.Limits appearing in boldface type apply over the entire operating temperature range.Symbol Parameter Condition Min Typ Max Units POWER SUPPLYI q_op Operating QuiescentCurrent PWM_IN=0V180250µAI q_sd Shutdown QuiescentCurrent EN=0V,PWM_IN=0V0.515µATOP DRIVERPeak Pull-Up Current Test Circuit1,V bias=5V,R=0.1Ω1.2APull-Up Rds_on I CBOOT=I HG=0.7A 2.4ΩPeak Pull-down Current Test Circuit2,V bias=5V,R=0.1Ω−1.0A Pull-down Rds_on I SW=I HG=0.7A 1.4Ωt4Rise Time Timing Diagram,C LOAD=3.3nF 17nst6Fall Time10ns t3Pull-Up Dead Time Timing Diagram23ns t5Pull-Down Delay Timing Diagram,fromPWM_IN Falling Edge21ns BOTTOM DRIVERPeak Pull-Up Current Test Circuit3,V bias=5V,R=0.1Ω1.2APull-up Rds_on I VCC=I LG=0.7A 2.6ΩPeak Pull-down Current Test Circuit4,V bias=5V,R=0.1Ω−2A Pull-down Rds_on I GND=I LG=0.7A0.65Ωt8Rise Time Timing Diagram,C LOAD=3.3nF 18nst2Fall Time6ns t7Pull-up Dead Time Timing Diagram28ns t1Pull-down Delay Timing Diagram,fromPWM_IN Rising Edge15ns LOGICV uvlo_up Power On Threshold VCC rises from0V toward5V3.0V V uvlo_dn Under-Voltage-Lock-OutThreshold2.5VV uvlo_hys Under-Voltage-Lock-OutHysteresis0.5VLM2725/LM27263Electrical Characteristics LM2725(Continued)VCC =CBOOT =5V,SW =GND =0V,unless otherwise specified.Typicals and limits appearing in plain type apply for T A =T J =+25˚C.Limits appearing in boldface type apply over the entire operating temperature range.Symbol ParameterConditionMinTypMaxUnitsLOGIC V IH_EN EN Pin High Input 2.4V V IL_EN EN Pin Low Input 0.8V I leak_EN EN Pin Leakage Current EN =VCC =5V −22µAVCC =5V,EN =0V−22t on_minMinimum Positive Input Pulse Width (Note 4)55nst off_minMinimum Negative Input Pulse Width (Note 5)55V IH_PWM PWM_IN High Level Input Voltage When PWM_IN pin goes high from 0V2.4VV IL_PWMPWM_IN Low Level Input VoltageWhen PWM_IN pin goes low from 5V0.8Electrical Characteristics LM2726VCC =CBOOT =5V,SW =GND =0V,unless otherwise specified.Typicals and limits appearing in plain type apply for T A =T J =+25˚C.Limits appearing in boldface type apply over the entire operating temperature range.Symbol ParameterCondition Min Typ Max Units POWER SUPPLY I q_op Operating Quiescent CurrentPWM_IN =0V185250µA I q_sdShutdown Quiescent CurrentEN =0V,PWM_IN =0V0.515µATOP DRIVERPeak Pull-Up Current Test Circuit 1,V bias =5V,R =0.1Ω3.0A Pull-Up Rds_on I CBOOT =I HG =1.0A 1.2ΩPeak Pull-down Current Test Circuit 2,V bias =5V,R =0.1Ω−3.2A Pull-down Rds_onI SW =I HG =1.0A 0.5Ωt 4Rise Time Timing Diagram,C LOAD =3.3nF17ns t 6Fall Time12ns t 3Pull-Up Dead Time Timing Diagram19ns t 5Pull-Down DelayTiming Diagram,fromPWM_IN from Falling Edge 27nsBOTTOM DRIVERPeak Pull-Up Current Test Circuit 3,V bias =5V,R =0.1Ω 3.2A Pull-up Rds_on I VCC =I LG =1.0A 1.1ΩPeak Pull-down Current Test Circuit 4,V bias =5V,R =0.1Ω−3.2A Pull-down Rds_onI GND =I LG =1.0A 0.6Ωt 8Rise Time Timing Diagram,C LOAD =3.3nF17ns t 2Fall Time14ns t 7Pull-up Dead TimeTiming Diagram12nsL M 2725/L M 27264Electrical CharacteristicsLM2726(Continued)VCC=CBOOT=5V,SW=GND=0V,unless otherwise specified.Typicals and limits appearing in plain type apply for T A=T J=+25˚C.Limits appearing in boldface type apply over the entire operating temperature range.Symbol Parameter Condition Min Typ Max UnitsBOTTOM DRIVERt1Pull-down Delay Timing Diagram,fromPWM_IN Rising Edge13ns LOGICV uvlo_up Power On Threshold VCC rises from0V toward5V2.8V V uvlo_dn Under-Voltage-Lock-OutThreshold2.5V V uvlo_hys Under-Voltage-Lock-OutHysteresis0.3V V IH_EN EN Pin High Input 2.4V V IL_EN EN Pin Low Input0.25VI leak_EN EN Pin Leakage Current EN=VCC=5V−22µAVCC=5V,EN=0V−22t on_min Minimum Positive InputPulse Width (Note4)55nst off_min Minimum Negative InputPulse Width(Note5)55V IH_PWM PWM_IN High LevelInput Voltage When PWM_IN pin goeshigh from0V2.4VV IL_PWM PWM_IN Low LevelInput Voltage When PWM_IN pin goeslow from5V0.25Note1:Absolute Maximum Ratings are limits beyond which damage to the device may occur.Operating ratings are conditions under which the device operates correctly.Operating Ratings do not imply guaranteed performance limits.Note2:Maximum allowable power dissipation is a function of the maximum junction temperature,T JMAX,the junction-to-ambient thermal resistance,θJA,and theambient temperature,T A.The maximum allowable power dissipation at any ambient temperature is calculated using:P MAX=(T JMAX-T A)/θJA.The junction-to-ambient thermal resistance,θJA,for LM2725/LM2726is172˚C/W.For a T JMAX of150˚C and T A of25˚C,the maximum allowable power dissipation is0.7W.Note3:ESD machine model susceptibility is100V.Note4:If after a rising edge,a falling edge occurs sooner than the specified value,the IC may intermittently fail to turn on the bottom gate when the top gate is off.As the falling edge occurs sooner and sooner,the driver may start to ignore the pulse and produce no output.Note5:If after a falling edge,a rising edge occurs sooner than the specified value,the IC may intermittently fail to turn on the top gate when the bottom gate is off.As the rising edge occurs sooner and sooner,the driver may start to ignore the pulse and produce no output.LM2725/LM27265Timing DiagramDS200072-3L M 2725/L M 2726 6Test CircuitsDS200072-5Test Circuit1DS200072-6Test Circuit2DS200072-7Test Circuit3DS200072-8Test Circuit4LM2725/LM27267Typical WaveformsDS200072-13FIGURE 1.Switching Waveforms of Test Circuit DS200072-14FIGURE 2.When Input Goes High DS200072-15FIGURE 3.When Input Goes LowDS200072-16FIGURE 4.Minimum Positive PulseL M 2725/L M 2726 8Physical Dimensionsinches (millimeters)unless otherwise notedLIFE SUPPORT POLICYNATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION.As used herein:1.Life support devices or systems are devices or systems which,(a)are intended for surgical implant into the body,or (b)support or sustain life,and whose failure to perform when properly used in accordance with instructions for use provided in the labeling,can be reasonably expected to result in a significant injury to the user.2.A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system,or to affect its safety or effectiveness.National Semiconductor Corporation AmericasTel:1-800-272-9959Fax:1-800-737-7018Email:support@National Semiconductor EuropeFax:+49(0)180-5308586Email:europe.support@Deutsch Tel:+49(0)6995086208English Tel:+44(0)8702402171Français Tel:+33(0)141918790National Semiconductor Asia Pacific Customer Response Group Tel:65-2544466Fax:65-2504466Email:ap.support@National Semiconductor Japan Ltd.Tel:81-3-5639-7560Fax:81-3-5639-75078-Lead Small Outline Package NS Package Number M08ALM2725/LM2726High Speed Synchronous MOSFET DriversNational does not assume any responsibility for use of any circuitry described,no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.。
W562XXX中文资料
W562XXX DAta SheetDUAL-TONE MELODY WITHVOICE SYNTHESIZER (BandDirector TM Series)Publication Release Date: June 3, 2003- 1 - Revision A5Table of Contents-1. GENERAL DESCRIPTION.........................................................................................................22. FEATURES.................................................................................................................................23. BLOCK DIAGRAM......................................................................................................................54. PAD DESCRIPTION...................................................................................................................55.ELECTRICAL CHARACTERISTICS...........................................................................................6 5.1 Absolute Maximum Ratings...............................................................................................6 5.2 DC Characteristics.............................................................................................................6 5.3 AC Characteristics.............................................................................................................6 6. APPLICATION CIRCUIT.............................................................................................................7 7.REVISION HISTORY (8)W562XXX- 2 -1. GENERAL DESCRIPTIONThe W562xxx is one of the derivatives of the BandDirector TM family. It consists of a 4-bit µC, two voice synthesizers, one Dual-Tone Melody generator, 38 KHz carrier output for IR transmission and one ROM shared ROM.The muti-tasking operation for voice synthesis and Dual-Tone Melody generation is implemented by dedicated H/W that can output the speech voice in parallel with the background music. The 4 bit kernel, which executes instructions of up to 12 KIPS (Kilo-Instructions Per Second) can offer customers a great deal of flexibility to achieve various kind of program controls for different applications.In addition, the W562xxx's user-friendly development environment can effectively reduce your design period and help you easily tool your project by yourself with the W56xxx ICE and emulation kit. There are 9 kinds of W562xxx IC bodies. (See table below).PART NO. W562S08 W562S10 W562S12 W562S15 W562S20 W562S25 W562S30 Duration 8 sec 10 sec 12 sec 15 sec 20 sec 25 sec 30 sec ROM Size 256 Kbit 288 Kbit 320 Kbit 480 Kbit 576 Kbit 672 Kbit 768 KbitPART NO. W562S40 W562S50 W562S60 W562S80 W562S99 W562M02 Duration 40 sec 50 sec 60 sec 80 sec 100 sec 120 sec ROM Size1216 Kbit1376 Kbit1536 Kbit2304 Kbit2688 Kbit3072 KbitNote: The voice durations are estimated by 6.4 KHz sampling ratePossible applications are: • Programmed voice synthesis with background music or speech.• I/O interactive voice synthesis to accompany background music or speech. • Q&A games.• Edutainment toys. •Remote toys.2. FEATURES• Multi-engine processor parallel management with µC, speech and Dual-Tone Melody. − µC // (Synthesizer1 or Dual-Tone Melody) // Synthesizer2 (//: in parallel )− µC, with basic ALU, 64-nibble RAM (including 8 working registers) and an 8-bit timer.The W561 & W562 user RAM initialization value is not constant. It is random. So, user must initial constant value.− Synthesizer1 capable of voice syntheses with Sample rate @ 4.8/6/8/12 KHz − Synthesizer2, same as synthesizer1.− Dual-tone Melody D/A output with 3 level volume controlW562XXXPublication Release Date: June 3, 2003- 3 -Revision A5− ICE & ROM chips use different Rosc. Rosc for mass production should check “W562 Freq vs R.pdf” file for more details. • Wide operating voltage range: 2.4 to 5.5 volts • Low power consumption (V DD = 5 Volt) − Standby current < 1 µA − Operating current < 1 mA• Main oscillator: 3 MHz, Ring oscillation • Input/ Output port− Port for input only: 1 port/ 4 pins − Input/ Output ports: 2 ports/ 8 pins − Port for output only: 1 port/ 4 pins− Can offer a direct row and column matrix of up to 72 (8 × 9) keys • Interrupts− Internal interrupts: Timer− External interrupts: TG (port 0, port1), POI (Power On Initialization) − Priority: POI > TG > Timer • Melody + Voice outputs for DAC • TG interrupt provided− Share TG interrupt for Port0/Port1 input− Global TG interrupt enable controlled (bit3 of the IER register) − Individual interrupt enable controlled (PER0 and PER1 registers) • Built-in 8 bit programmable down count timer− One of two internal clock frequencies can be selected − Desired Timer interval = (preset value+1) * 1/F T(F T : 32 Hz or 32 KHz dependent on the bit0 of the MODE register, at Fosc = 3 MHz) • A total of around 64,000 instructions can be used in the program • Powerful instruction set:− Arithmetic: ADD, ADDC, SUB, SUBC, INC, DEC, SETB, CLRB − Logic Operation: AND, OR, XOR, NOT − Shift & Rotate: RORC, ROLC, SHRC, SHLC − Date move: LD, LDR, MV− Branch: JP, JB0, JB1, JB2, JB3, JZ, JNZ, JC, JNC, JBZ1, JBZ2, CJNE, CJE, DJNZ, DJZ − Subroutine: CALL, RTN, RTI− Others: NOP, END, EN INT, DIS INT, PLAY CH1, PLAY CH2, STOP CH1, STOP CH2W562XXX- 4 -• 8-level STACK shared by CALL, Timer, Synthesizer and TG• Multi-tasking operation via interrupt for automatic voice segment concatenation − Melody or Speech voice can be easily concatenated with symbol "+" − Example: PLAY CH1, H4 + Melody1 + Speech1 + Speech2 + Melody2 + T4The DAC of the W562xxx will play Melody1, Speech1, Speech2 and Melody2 sequentially • The length of the voice segment is unlimited • Speech section control− Sample rate control (4.8K/6K/8K/12K)− Example: PLAY CH2, H4 + speech1_S + T4; S: define the sample rate • Melody section control− Background music D/A output bits selectable for volume control (6/7/8) − Example: PLAY CH1, H4 + Melody_xxB + T4; B: define the melody output bits • Dual-Tone melody with − XM3: Triple harmonic effect − 3 kinds of percussion effects − 6 beats− 41 pitches from G3# to C7 − 16 kinds of tempo− The number of the score and note are unlimited • Provide IR 38 KHz carrier− TXF.0 = 0/1 disable/enable IR carrier− TXF.1 = 0/1 output carrier with P2.3 low/high active• Provides ICE (In Circuit Emulation) system for easy debugging − Free Run − Stop Run − Program Reset − Step Into − Step Over − Go To Cursor − Break point− Register read/ modifyW562XXXPublication Release Date: June 3, 2003- 5 - Revision A53. BLOCK DIAGRAMOSCDAC4. PAD DESCRIPTIONW562XXX- 6 -5. ELECTRICAL CHARACTERISTICS5.1 Absolute Maximum RatingsPARAMETER SYMBOL CONDITIONSRATED VALUE UNIT Power Supply V DD −V SS - -0.3 to +7.0 V Input Voltage V IN All Inputs V SS -0.3 to V DD +0.3V Storage Temp. T STG - -55 to +150 °C Operating Temp.T OPR-0 to +70°CNote: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the device.5.2 DC Characteristics(V DD −V SS = 3.0V, Fm = 3 MHz, T A = 25° C; unless otherwise specified)5.3 AC CharacteristicsW562XXXPublication Release Date: June 3, 2003- 7 - Revision A56. APPLICATION CIRCUITW562XXX- 8 -7. REVISION HISTORYREVISION DATEDESCRIPTIONA1 Oct-1998 Preliminaryrelease. A2 Dec-1998 Add BandDirector trade mark A3Feb-1999Remove the ‘preliminary’ markA4 Jan-2001In page 1, add statement “The W561&W562 user RAM initializationvalue is not constant. It is random.” A5June 3, 2003 In page 2, add statement “ICE & ROM chips use different Rosc.Rosc for mass production should check “W562 Freq vs R.pdf” filefor more details.”HeadquartersNo. 4, Creation Rd. III,Science-Based Industrial Park,Hsinchu, Taiwan TEL: 886-3-5770066FAX: 886-3-5665577/Taipei Office TEL: 886-2-8177-7168FAX: 886-2-8751-3579Winbond Electronics Corporation America2727 North First Street, San Jose,CA 95134, U.S.A.TEL: 1-408-9436666FAX: 1-408-5441798Winbond Electronics (H.K.) Ltd.No. 378 Kwun Tong Rd., Kowloon, Hong Kong FAX: 852-********Unit 9-15, 22F, Millennium City, TEL: 852-********Please note that all data and specifications are subject to change without notice.All the trade marks of products and companies mentioned in this data sheet belong to their respective owners.Winbond Electronics (Shanghai) Ltd.200336 ChinaFAX: 86-21-6236599827F, 2299 Yan An W. Rd. Shanghai, TEL: 86-21-62365999Winbond Electronics Corporation JapanShinyokohama Kohoku-ku, Yokohama, 222-0033FAX: 81-45-47818007F Daini-ueno BLDG, 3-7-18 TEL: 81-45-47818819F, No.480, Rueiguang Rd.,Neihu District, Taipei, 114,Taiwan, R.O.C.。
CXA2726GA资料
-1-
PE05717-PS
CXA2726GA
Absolute Maximum Ratings
(Ta = 25°C)
Supply voltage Operating temperature Storage temperature Allowable power dissipation
VOR
Output voltage ratio ((RF+) + (RF–))/(A to D) *
VOR
Maximum output potential (A to D, E+I to H+L)
Vomax
Conditions In the dark In the dark, VC reference
λ = 650nm, 780nm, Po = 10µW
λ = 650nm, 780nm, Po = 10µW
λ = 650nm, 780nm, Po = 1mW
Min. — –30 –35 –30 –110 –110 –30 –30 –30 –30 –50 –50 –160 –100 –150 –100 –1 7.5 30.15 1.25 6.71 –11.19 3.91 1.77
Package
18-pin LFLGA (Plastic)
Structure
Bipolar silicon monolithic IC
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
单片机常用芯片资料
附录三常用芯片引脚图一、 单片机类1、MCS-51芯片介绍：MCS-51系列单片机是美国Intel 公司开发的8位单片机，又可以分为多个子系列。
MCS-51系列单片机共有40条引脚，包括32条I/O 接口引脚、4条控制引脚、2条电源引脚、2条时钟引脚。
引脚说明： P0.0～P0.7：P0口8位口线，第一功能作为通用I/O 接口，第二功能作为存储器扩展时的地址/数据复用口。
P1.0～P1.7：P1口8位口线，通用I/O 接口无第二功能。
P2.0～P2.7：P2口8位口线，第一功能作为通用I/O 接口，第二功能作为存储器扩展时传送高8位地址。
P3.0～P3.7：P3口8位口线，第一功能作为通用I/O 接口，第二功能作为为单片机的控制信号。
ALE/ PROG ：地址锁存允许/编程脉冲输入信号线（输出信号）PSEN ：片外程序存储器开发信号引脚（输出信号）EA/Vpp ：片外程序存储器使用信号引脚/编程电源输入引脚RST/VPD ：复位/备用电源引脚2、MCS-96芯片介绍：MCS-96系列单片机是美国Intel 公司继MCS-51系列单片机之后推出的16位单片机系列。
它含有比较丰富的软、硬件资源，适用于要求较高的实时控制场合。
它分为48引脚和68引脚两种，以48引脚居多。
引脚说明：RXD/P2.1 TXD/P2.0：串行数据传出分发送和接受引脚，同时也作为P2口的两条口线HS1.0～HS1.3：高速输入器的输入端HS0.0～HS0.5：高速输出器的输出端（有两个和HS1共用）Vcc ：主电源引脚（＋5V ）Vss ：数字电路地引脚（0V ）Vpd ：内部RAM 备用电源引脚（＋5V ）V REF ：A/D 转换器基准电源引脚（＋5V ）12345678910111213141516171819204039383736353433323130292827262524232221P1.0P1.1P1.2P1.3P1.4P1.5P1.6P1.7RST RXD/P3.0TXD/P3.1INT0/P3.2INT1/P3.3T0/P3.4T1/P3.5WR/P3.6RD/P3.7XTAL2XTAL1V SS V CC P0.0/AD 0P0.1/AD 1P0.2/AD 2P0.3/AD 3P0.4/AD 4P0.5/AD 5P0.6/AD 6P0.7/AD 7EA/V PP ALE/PROG PSENP2.7/A 15P2.6/A 14P2.5/A 13P2.4/A 12P2.3/A 11P2.2/A 10P2.1/A 9P2.0/A 8803180518751AGND：A/D转换器参考地引脚XTAL1、XTAL2：内部振荡器反相器输入、输出端，常外接晶振。
2764芯片
2764资料常见的EPROM芯片有Intel2761（2K*8）、2732（4K*8）、2764（8K*8）、27128（16K*8）、2 7256、27512。
2764是8K*8字节的紫外线镲除、电可编程只读存储器，单一+5V供电，工作电流为75mA，维持电流为35mA，读出时间最大为250nS，28脚双列直插式封装。
各引脚的含义为：A0-A12为13根地址线，可寻址8K字节；O0-O7为数据输出线；CE为片选线；OE为数据输出选通线；PGM为编程脉冲输入端；Vp p是编程电源；Vcc是主电源。
正常工作（只读）时，Vpp=Vcc=+5V,～PG M=+5V。
编程时，Vpp＝+25V（高压），～PGM端加入宽度为50ms的负脉冲。
EPROM电路EPROM 2764的外部引线如图所示。
这是一块8K×8bit 的EPROM芯片，它的引线与SRAM芯片6264是兼容的。
这给使用者带来很大方便。
因为在软件调试过程中，程序经常需要修改，此时可将程序先放在6264中，读写修改都很方便。
调试成功后，将程序固化在2764中，由于它与 6264的引脚兼容，所以可以把2764直接插在原6264的插座上。
这样，程序就不会由于断电而丢失。
下面介绍2764各引脚的含义:① A0一A12：13根地址输入线。
用于寻址片内的8K个存储单元。
② D0～D7：8根双向数据线，正常工作时为数据输出线。
编程时为数据输入线。
③OE：输出允许信号。
低电平有效。
当该信号为0时，芯片中的数据可由D0～D7端输出。
④CE：选片信号。
低电平有效。
当该信号为0时表示选中此芯片。
．⑤PGM:编程脉冲输入端。
对EPROM编程时，在该端加上编程脉冲。
读操作时该信号为1。
⑥VPP：编程电压输入端。
编程时应在该端加上编程高电压，不同的芯片对VPP的值要求的不一样，可以是+12.5V，+15V，+21V，+25V等。
说明：EPROM的一个重要优点是可以擦除重写，而且允许擦除的次数超过上万次。
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s HIGH SPEED:t PD=11ns(TYP.)at V CC=6Vs LOW POWER DISSIPATION:I CC=1µA(MAX.)at T A=25°Cs HIGH NOISE IMMUNITY:V NIH=V NIL=28%V CC(MIN.)s SYMMETRICAL OUTPUT IMPEDANCE: |I OH|=I OL=4mA(MIN)s BALANCED PROPAGATION DELAYS: t PLH≅t PHLs WIDE OPERATING VOLTAGE RANGE: V CC(OPR)=2V to6Vs PIN AND FUNCTION COMPATIBLE WITH 74SERIES51DESCRIPTIONThe M74HC51is an high speed CMOS DUAL2 WIDE2INPUT AND/OR INVERT GATE fabricated with silicon gate C2MOS technology. It contains a2-WIDE2-INPUT AND/OR INVERT GATE and a2-WIDE3-INPUT AND/OR INVERT GATE.The internal circuit is composed of3stages(2 INPUT)or5stages(3INPUT)including buffer output,which enables high noise immunity and stable output.All inputs are equipped with protection circuits against static discharge and transient excess voltage.M74HC51DUAL2WIDE2INPUT AND/OR INVERT GATEPIN CONNECTION AND IEC LOGIC SYMBOLS ORDER CODESPACKAGE TUBE T&R DIP M74HC51B1RSOP M74HC51M1R M74HC51RM13TR TSSOP M74HC51TTRTSSOPDIP SOP1/9August2001M74HC512/9INPUT AND OUTPUT EQUIVALENT CIRCUITPIN DESCRIPTIONTRUTH TABLETRUTH TABLEX :Don’t CareABSOLUTE MAXIMUM RATINGSAbsolute Maximum Ratings are those values beyond which damage to the device may occur.Functional operation under these conditions isnot implied(*)500mW at 65°C;derate to 300mW by 10mW/°C from 65°C to 85°CPIN No SYMBOL NAME AND FUNCTION 1,12,13,9,10,111A to 1F Data Inputs 2,3,4,52A to 2D Data Inputs 8,61Y to 2Y Data Outputs 7GND Ground (0V)14V CCPositive Supply Voltage1A 1B1C1D1E1F 1Y H H H X X X L XX X H H HL ALL OTHER COMBINATIONSH2A 2B2C2D2Y H H X X L XX H HL ALL OTHER COMBINATIONSHSymbol ParameterValue Unit V CC Supply Voltage -0.5to +7V V I DC Input Voltage -0.5to V CC +0.5V V O DC Output Voltage -0.5to V CC +0.5V I IK DC Input Diode Current ±20mA I OK DC Output Diode Current ±20mA I ODC Output Current±25mA I CC or I GND DC V CC or Ground Current±50mA P DPower Dissipation 500(*)mW T stg Storage Temperature -65to +150°C T LLead Temperature (10sec)300°CM74HC513/9RECOMMENDED OPERATING CONDITIONSDC SPECIFICATIONSSymbol ParameterValue Unit V CC Supply Voltage 2to 6V V I Input Voltage 0to V CC V V O Output Voltage 0to V CC V T op Operating Temperature -55to 125°C t r ,t fInput Rise and Fall TimeV CC =2.0V 0to 1000ns V CC =4.5V 0to 500ns V CC =6.0V0to 400nsSymbolParameterTest ConditionValue UnitV CC (V)T A =25°C -40to 85°C -55to 125°C Min.Typ.Max.Min.Max.Min.Max.V IHHigh Level Input Voltage 2.0 1.5 1.5 1.5V 4.5 3.15 3.15 3.156.0 4.24.24.2V ILLow Level Input Voltage2.00.50.50.5V4.5 1.35 1.35 1.356.0 1.81.81.8V OHHigh Level Output Voltage2.0I O =-20µA 1.9 2.0 1.9 1.9V4.5I O =-20µA 4.4 4.5 4.4 4.46.0I O =-20µA5.96.0 5.9 5.94.5I O =-4.0mA 4.18 4.31 4.13 4.106.0I O =-5.2mA 5.685.8 5.635.60V OLLow Level Output Voltage2.0I O =20µA 0.00.10.10.1V 4.5I O =20µA 0.00.10.10.16.0I O =20µA 0.00.10.10.14.5I O =4.0mA 0.170.260.330.406.0I O =5.2mA 0.180.260.330.40I I Input Leakage Current6.0V I =V CC or GND ±0.1±1±1µA I CCQuiescent Supply Current6.0V I =V CC or GND11020µAM74HC514/9AC ELECTRICAL CHARACTERISTICS (C L =50pF,Input t r =t f =6ns)CAPACITIVE CHARACTERISTICS1)C PD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load.(Refer to Test Circuit).Average operating current can be obtained by the following equation.I CC(opr)=C PD x V CC x f IN +I CCTEST CIRCUITC L =50pF or equivalent (includes jig and probe capacitance)R T =Z OUT of pulse generator (typically 50Ω)SymbolParameterTest ConditionValue UnitV CC (V)T A =25°C -40to 85°C -55to 125°C Min.Typ.Max.Min.Max.Min.Max.t TLH t THL Output TransitionTime 2.0307595110ns 4.581519226.07131619t PLH t PHL Propagation DelayTime2.0391********ns4.5132025306.011172126SymbolParameterTest ConditionValue UnitV CC (V)T A =25°C -40to 85°C -55to 125°C Min.Typ.Max.Min.Max.Min.Max.C IN Input Capacitance 5.05101010pF C PDPower Dissipation Capacitance (note 1)5.032pFM74HC51 WAVEFORM:PROPAGATION DELAY TIMES(f=1MHz;50%duty cycle)5/9M74HC516/9DIM.mm.inchMIN.TYP MAX.MIN.TYP.MAX. a10.510.020B 1.39 1.650.0550.065 b0.50.020b10.250.010D200.787 E8.50.335e 2.540.100e315.240.600F7.10.280 I 5.10.201 L 3.30.130Z 1.27 2.540.0500.100Plastic DIP-14MECHANICAL DATAP001AM74HC517/9DIM.mm.inch MIN.TYPMAX.MIN.TYP.MAX.A 1.750.068a10.10.20.0030.007a2 1.650.064b 0.350.460.0130.018b10.190.250.0070.010C 0.50.019c145°(typ.)D 8.558.750.3360.344E 5.86.20.2280.244e 1.270.050e37.620.300F 3.8 4.00.1490.157G 4.6 5.30.1810.208L 0.5 1.270.0190.050M 0.680.026S8°(max.)SO-14MECHANICAL DATAPO13GM74HC518/9DIM.mm.inchMIN.TYP MAX.MIN.TYP.MAX.A 1.20.047A10.050.150.0020.0040.006 A20.81 1.050.0310.0390.041 b0.190.300.0070.012 c0.090.200.0040.0089D 4.95 5.10.1930.1970.201E 6.2 6.4 6.60.2440.2520.260E1 4.3 4.4 4.480.1690.1730.176 e0.65BSC0.0256BSCK0°8°0°8°L0.450.600.750.0180.0240.030TSSOP14MECHANICAL DATAc EbA2AE1D1PIN1IDENTIFICATIONA1LKe0080337DM74HC51 Information furnished is believed to be accurate and reliable.However,STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringe ment of patents or other rights of third parties which may result from its use.No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics.Specifications mentioned in this publication are subject to change without notice.This publication supersedes and replaces all information previously supplied.STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.©The ST logo is a registered trademark of STMicroelectronics©2001STMicroelectronics-Printed in Italy-All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia-Brazil-China-Finland-France-Germany-Hong Kong-India-Italy-Japan-Malaysia-Malta-MoroccoSingapore-Spain-Sweden-Switzerland-United Kingdom©http://w 9/9。