Magnon splitting induced by charge ordering in NaV_2O_5
核磁共振中常用的英文缩写和中文名称
NMR中常用的英文缩写和中文名称收集了一些NMR中常用的英文缩写,译出其中文名称,供初学者参考,不妥之处请指出,也请继续添加.相关附件NMR中常用的英文缩写和中文名称APT Attached Proton Test 质子连接实验ASIS Aromatic Solvent Induced Shift 芳香溶剂诱导位移BBDR Broad Band Double Resonance 宽带双共振BIRD Bilinear Rotation Decoupling 双线性旋转去偶(脉冲)COLOC Correlated Spectroscopy for Long Range Coupling 远程偶合相关谱COSY ( Homonuclear chemical shift ) COrrelation SpectroscopY (同核化学位移)相关谱CP Cross Polarization 交叉极化CP/MAS Cross Polarization / Magic Angle Spinning 交叉极化魔角自旋CSA Chemical Shift Anisotropy 化学位移各向异性CSCM Chemical Shift Correlation Map 化学位移相关图CW continuous wave 连续波DD Dipole-Dipole 偶极-偶极DECSY Double-quantum Echo Correlated Spectroscopy 双量子回波相关谱DEPT Distortionless Enhancement by Polarization Transfer 无畸变极化转移增强2DFTS two Dimensional FT Spectroscopy 二维傅立叶变换谱DNMR Dynamic NMR 动态NMRDNP Dynamic Nuclear Polarization 动态核极化DQ(C) Double Quantum (Coherence) 双量子(相干)DQD Digital Quadrature Detection 数字正交检测DQF Double Quantum Filter 双量子滤波DQF-COSY Double Quantum Filtered COSY 双量子滤波COSYDRDS Double Resonance Difference Spectroscopy 双共振差谱EXSY Exchange Spectroscopy 交换谱FFT Fast Fourier Transformation 快速傅立叶变换FID Free Induction Decay 自由诱导衰减H,C-COSY 1H,13C chemical-shift COrrelation SpectroscopY 1H,13C化学位移相关谱H,X-COSY 1H,X-nucleus chemical-shift COrrelation SpectroscopY 1H,X-核化学位移相关谱HETCOR Heteronuclear Correlation Spectroscopy 异核相关谱HMBC Heteronuclear Multiple-Bond Correlation 异核多键相关HMQC Heteronuclear Multiple Quantum Coherence异核多量子相干HOESY Heteronuclear Overhauser Effect Spectroscopy 异核Overhause效应谱HOHAHA Homonuclear Hartmann-Hahn spectroscopy 同核Hartmann-Hahn谱HR High Resolution 高分辨HSQC Heteronuclear Single Quantum Coherence 异核单量子相干INADEQUATE Incredible Natural Abundance Double Quantum Transfer Experiment 稀核双量子转移实验(简称双量子实验,或双量子谱)INDOR Internuclear Double Resonance 核间双共振INEPT Insensitive Nuclei Enhanced by Polarization 非灵敏核极化转移增强INVERSE H,X correlation via 1H detection 检测1H的H,X核相关IR Inversion-Recovery 反(翻)转回复JRES J-resolved spectroscopy J-分解谱LIS Lanthanide (chemical shift reagent ) Induced Shift 镧系(化学位移试剂)诱导位移LSR Lanthanide Shift Reagent 镧系位移试剂MAS Magic-Angle Spinning 魔角自旋MQ(C) Multiple-Quantum ( Coherence ) 多量子(相干)MQF Multiple-Quantum Filter 多量子滤波MQMAS Multiple-Quantum Magic-Angle Spinning 多量子魔角自旋MQS Multi Quantum Spectroscopy 多量子谱NMR Nuclear Magnetic Resonance 核磁共振NOE Nuclear Overhauser Effect 核Overhauser效应(NOE)NOESY Nuclear Overhauser Effect Spectroscopy 二维NOE谱NQR Nuclear Quadrupole Resonance 核四极共振PFG Pulsed Gradient Field 脉冲梯度场PGSE Pulsed Gradient Spin Echo 脉冲梯度自旋回波PRFT Partially Relaxed Fourier Transform 部分弛豫傅立叶变换PSD Phase-sensitive Detection 相敏检测PW Pulse Width 脉宽RCT Relayed Coherence Transfer 接力相干转移RECSY Multistep Relayed Coherence Spectroscopy 多步接力相干谱REDOR Rotational Echo Double Resonance 旋转回波双共振RELAY Relayed Correlation Spectroscopy 接力相关谱RF Radio Frequency 射频ROESY Rotating Frame Overhauser Effect Spectroscopy 旋转坐标系NOE谱ROTO ROESY-TOCSY Relay ROESY-TOCSY 接力谱SC Scalar Coupling 标量偶合SDDS Spin Decoupling Difference Spectroscopy 自旋去偶差谱SE Spin Echo 自旋回波SECSY Spin-Echo Correlated Spectroscopy自旋回波相关谱SEDOR Spin Echo Double Resonance 自旋回波双共振SEFT Spin-Echo Fourier Transform Spectroscopy (with J modulation) (J-调制)自旋回波傅立叶变换谱SELINCOR Selective Inverse Correlation 选择性反相关SELINQUATE Selective INADEQUA TE 选择性双量子(实验)SFORD Single Frequency Off-Resonance Decoupling 单频偏共振去偶SNR or S/N Signal-to-noise Ratio 信/ 燥比SQF Single-Quantum Filter 单量子滤波SR Saturation-Recovery 饱和恢复TCF Time Correlation Function 时间相关涵数TOCSY Total Correlation Spectroscopy 全(总)相关谱TORO TOCSY-ROESY Relay TOCSY-ROESY接力TQF Triple-Quantum Filter 三量子滤波WALTZ-16 A broadband decoupling sequence 宽带去偶序列WATERGATE Water suppression pulse sequence 水峰压制脉冲序列WEFT Water Eliminated Fourier Transform 水峰消除傅立叶变换ZQ(C) Zero-Quantum (Coherence) 零量子相干ZQF Zero-Quantum Filter 零量子滤波T1 Longitudinal (spin-lattice) relaxation time for MZ 纵向(自旋-晶格)弛豫时间T2 Transverse (spin-spin) relaxation time for Mxy 横向(自旋-自旋)弛豫时间tm mixing time 混合时间τ c rotational correlation time 旋转相关时间。
光电催化苯酚特征峰指认_解释说明
光电催化苯酚特征峰指认解释说明引言1.1 概述在当今环境保护和可持续发展的背景下,寻找高效、环境友好的催化剂成为研究的热点。
光电催化技术由于其能将光能直接转化为电能,并可以促进各种有机废水和废气的降解,受到了广泛的关注。
本文主要研究了光电催化苯酚降解过程中产生的特征峰,并通过特征峰指认方法对其进行解释说明。
苯酚作为一种常见的有机废物,具有毒性较大且不易降解等特点,因此发展一种有效去除苯酚污染的方法具有重要意义。
1.2 文章结构本文共分为五个部分进行论述。
除引言外,第二部分将深入介绍光电催化苯酚特征峰指认相关知识。
接着,在第三部分中将详细描述实验设计与方法。
第四部分将呈现研究结果并进行讨论,包括特征峰指认结果展示、对结果可能性及影响因素的讨论解释以及与其他研究结果的对比分析。
最后,在第五部分对整个研究进行总结与展望。
1.3 目的本文的目的在于通过对光电催化苯酚特征峰的指认,并解释说明其产生机制,为进一步了解光电催化技术在有机废水处理中的应用奠定基础。
同时,本研究也有助于为环境保护和废物处理提供理论依据和实践指导。
注:此内容仅供参考,具体文章内容撰写建议根据研究背景和实验结果进行拓展。
2. 光电催化苯酚特征峰指认:2.1 光电催化原理:光电催化是一种将光能转化为化学能的过程。
在光电催化反应中,光能激发了催化剂的电子,使其产生离子或激发态。
这些激发态的催化剂通过与反应物相互作用,促进了反应的进行。
对于苯酚分子而言,在光电催化过程中,其分子中的特定键或基团会参与反应,并在反应过程中形成特征性的振动频率,即特征峰。
2.2 苯酚的特征峰:苯酚分子在红外光谱中表现出多个特征峰。
这些特征峰对应了苯酚分子内部不同键和基团的振动模式。
以常见结构为例,苯环上的C-O键会引起1370-1290 cm^-1范围内出现的C-O 伸缩振动;O-H键则产生3650-3550 cm^-1范围内出现的O-H伸缩振动和1350-1200 cm^-1范围内出现的O-H弯曲振动。
(武汉大学)分子生物学考研名词汇总
(武汉大学)分子生物学考研名词汇总●base flipping 碱基翻出●denaturation 变性DNA双链的氢键断裂,最后完全变成单链的过程●renaturation 复性热变性的DNA经缓慢冷却,从单链恢复成双链的过程●hybridization 杂交●hyperchromicity 增色效应●ribozyme 核酶一类具有催化活性的RNA分子,通过催化靶位点RNA链中磷酸二酯键的断裂,特异性地剪切底物RNA分子,从而阻断基因的表达●homolog 同源染色体●transposable element 转座因子●transposition 转座遗传信息从一个基因座转移至另一个基因座的现象成为基因转座,是由转座因子介导的遗传物质重排●kinetochore 动粒●telomerase 端粒酶●histone chaperone 组蛋白伴侣●proofreading 校正阅读●polymerase switching 聚合酶转换●replication folk 复制叉刚分开的模板链与双链DNA的连接区●leading strand 前导链在DNA复制过程中,与复制叉运动方向相同,以5’-3’方向连续合成的链被称为前导链●lagging strand 后随链在DNA复制过程中,与复制叉运动方向相反的,不连续延伸的DNA链被称为后随链●Okazaki fragment 冈崎片段●primase 引物酶依赖于DNA的RNA聚合酶,其功能是在DNA复制过程中合成RNA引物●primer 引物是指一段较短的单链RNA或DNA,它能与DNA的一条链配对提供游离的3’-OH末端以作为DNA聚合酶合成脱氧核苷酸链的起始点●DNA helicase DNA解旋酶●single-strand DNA binding protein, SSB 单链DNA结合蛋白●cooperative binding 协同结合●sliding DNA clamp DNA滑动夹●sliding clamp loader 滑动夹装载器●replisome 复制体●replicon 复制子单独复制的一个DNA单元称为一个复制子,一个复制子在一个细胞周期内仅复制一次●replicator 复制器●initiator protein 起始子蛋白●end replication problem 末端复制问题●homologous recombination 同源重组●strand invasion 链侵入●Holliday junction Holliday联结体●branch migration 分支移位●joint molecule 连接分子●synthesis-dependent strand annealing, SDSA 合成依赖性链退火●gene conversion 基因转变●conservative site-specific recombination, CSSR 保守性位点特异性重组●recombination site 重组位点●recombinase recognition sequence 重组酶识别序列●crossover region 交换区●serine recombinase 丝氨酸重组酶●tyrosine recombinase 酪氨酸重组酶●lysogenic state 溶原状态●lytic growth 裂解生长●transposon 转座子能够在没有序列相关性的情况下独立插入基因组新位点上的一段DNA序列,是存在与染色体DNA上可自主复制和位移的基本单位。
酸性离子液体催化一三二羰基化合物与叔醇之间的反应
Bro¨nsted acid ionic liquid-catalyzed direct benzylation,allylation and propargylation of 1,3-dicarbonyl compounds with alcohols as well as one-pot synthesis of 4H -chromenesKazumasa Funabiki *,Takuya Komeda,Yasuhiro Kubota,Masaki MatsuiDepartment of Materials Science and Technology,Faculty of Engineering,Gifu University,1-1Yanagido,Gifu 501-1193,Japana r t i c l e i n f oArticle history:Received 14April 2009Received in revised form 3July 2009Accepted 3July 2009Available online 8July 2009Keywords:Ionic Bro¨nsted acid catalyst Substitution1,3-Dicarbonyl compounds Alcohola b s t r a c tRecyclable ionic Bro¨nsted acid was prepared in nearly quantitative yield by reacting 1-butylimidazole with an equimolar amount of 1,3-propanesultone,followed by treatment with an equimolar amount of tri-fluoromethanesulfonic acid.The ionic Bro¨nsted acid-catalyzed direct benzylation,allylation and prop-argylation of 1,3-dicarbonyl compounds with various alcohols in ionic liquid [N -ethyl-N -methyl imidazolium trifluoromethanesulfonate (EMIOTf)],at 100 C for 3h proceeded smoothly to give the cor-responding products in good to excellent yields without the use of any hazardous or volatile solvents and without any by-product such as salts.Furthermore,tandem benzylation–cyclization–dehydration of 1,3-dicarbonyl compounds to give functionalized 4H -chromenes was also achieved in this catalytic reaction.Ó2009Elsevier Ltd.All rights reserved.1.IntroductionThe alkylation of 1,3-dicarbonyl compounds usually requires not only the transformation of 1,3-dicarbonyl compounds into more re-active species,such as enolates by reacting the 1,3-dicarbonyl com-pounds with base,but also the use of alkyl halides,since the hydroxyl group is not a good leaving group and 1,3-dicarbonyl compounds do not have high nucleophilicity.However,these requirements are limitations,as is the production of a salt as a by-product.From the standpoint of atom-economical and environmentally friendly chemistry,the catalytic direct carbon–carbon bond formation of 1,3-dicarbonyl compounds using alcohols in place of alkyl halides is one of the most ideal and salt-free reactions in organic synthesis,since steps are not needed for the generation of reactive enolate or for pre-conversion to the alkyl halides,and only water is generated as a by-product.Although some excellent catalysts,such as indium trichloride,1proton-exchanged montmorillonite,2trifluoromethanesulfonic acid,3p -toluenesulfonic acid,3,4polymer-supported p -toluenesulfonic acid,4metal triflate,5iron(III)chloride 6and hetropolyacid 7have recently been examined for catalytic direct carbon–carbon bond formation in active methylene compounds using alcohols as alkylating reagents,most of the reported reactions require hazardous or volatile solvents,such as nitromethane,dichloromethane,acetonitrile and toluene,and the re-covery and reuse of the catalysts far are still limited.2,4,5b Therefore,thedevelopment of a much more convenient,reusable,environmentally friendly system for the catalytic alkylation of 1,3-dicarbonyl com-pounds without the use of any hazardous or volatile solvents is needed.In this report,for the first time,we present our recyclable Bro¨nsted acid-catalyzed direct benzylation,allylation and propargylation of 1,3-dicarbonyl compounds with various alcohols as well as the tan-dem benzylation–cyclization–dehydration of 1,3-dicarbonyl com-pounds to give functionalized 4H -chromene in an ionic liquid system.2.Results and discussion2.1.Preparation of Bro¨nsted acid ionic liquid catalyst 1Recyclable Bro¨nsted acid ionic liquid catalyst 1,which was used for esterification,was prepared by modification of the method reported by Forbes et al.8as shown in Scheme 1.1-ButylimidazoleNNn -Bu SO 2O TfO 150°C,5hNN 3H n -Bu rt,20min 1(97%)CF 3SO 3H (1equiv.)NN SO 3n-Bu(98%)Scheme 1.Preparation of Bro¨nsted acid ionic liquid catalyst 1.*Corresponding author.Tel.:þ812932599;fax:þ812932794.E-mail address:funabiki@gifu-u.ac.jp (K.Funabiki).0040-4020/$–see front matter Ó2009Elsevier Ltd.All rights reserved.doi:10.1016/j.tet.2009.07.012Tetrahedron 65(2009)7457–7463Contents lists available at ScienceDirectTetrahedronjournal homepage:www.elsevie /locate/tetwas allowed to react with an equimolar amount of 1,3-propane-sultone at room temperature to produce zwitterionic imidazolium salt in quantitative yield.Treatment of this zwitterionic imidazo-lium salt with an equimolar amount of trifluoromethanesulfonicacid at 150 C gave the Bro¨nsted acid ionic liquid catalyst 1in quantitative yield.2.2.Bro¨nsted acid ionic liquid 1-catalyzed direct benzylation,allylation and propargylation of 1,3-dicarbonyl compounds 2with alcohols 3The reaction of 2,4-pentanedione (2a )with 1-phenylethanol (3a )was conducted in the presence of 5mol %of the prepared Bro¨nsted acid ionic liquid catalyst 1in a commercially available ionic liquid,N -ethyl-N -methyl imidazolium trifluoromethanesulfonate (EMIOTf),at 100 C for 3h.After the mixture was allowed to cool to room temperature,repeated extraction with a mixed solvent of diethyl ether and hexane (v/v ¼1:1)from EMIOTf,evaporation under vacuum,and chromatography with silica gel gave 3-(1-phenyl-ethyl)pentane-2,4-dione (4aa )in 77%yield,together with a small amount (7%)of (E )-but-1-ene-1,3-diyldibenzene (5)(styrene dim-mer)(Table 1,entry 1).Other ionic liquids carrying other counter anions,such as N -butyl-N -methylimidazolium tetrafluoroborate (BMIBF 4)and N -butyl-N -methylimidazolium hexafluorophosphite (BMIPF 6),were used (entries 2and 3).As a result,in the case of BMIBF 4,only trace amount of the product 4aa was formed,and 1,10-oxybis-(ethane-1,1-diyl)dibenzene (bis(1-phenylethyl)ether)was obtained as a main product (33%yield,dr ¼50:50)(entry 2).The reaction in BMIPF 6proceeded smoothly to give 4aa in 94%yield (entry 3).Surprisingly,when the ionic liquid catalyst 1was not added,the reaction of diketone 2a with alcohol 3a also proceeded to give the corresponding product 4aa in lower yield (61%),to-gether with styrene dimmer 5(20%yield)(entry 4).9The use of an equimolar amount of diketone 2a resulted in significant decrease of the yield (39%)of 4aa (entry 5).Employing trifluoromethansulfonicacid in place of the Bro¨nsted acid ionic liquid catalyst 1gave the similar yield (74%)of 4aa ,together with styrene dimmer 5(8%)as well as 4-phenylpentan-2-one (20%)(entry 6).The results of the Bro¨nsted acid ionic liquid 1-catalyzed reaction of 1,3-diketones 2,such as 2,4-pentanedione (2a )and 1,3-diphenyl-propane-1,3-dione (2b ),with various alcohols,such as 1-phenyl-ethanol (3a ),diphenylmethanol (3b ),(E )-1,3-diphenylprop-2-en-1-ol (3c ),(E )-pent-3-en-2-ol (3d ),and 1,3-diphenylprop-2-yn-1-ol (3e )in EMIOTf,are summarized in Table 1.In the case of diphenylmethanol (3b ),the reaction also proceeded smoothly to give 3-benzhy-drylpentane-2,4-dione (4ab )in 94%yield (entry 7).Allylation and propargylation using (E )-1,3-diphenylprop-2-en-1-ol (3c ),(E )-pent-3-en-2-ol (3d )and 1,3-diphenylprop-2-yn-1-ol (3e )also proceeded to give the corresponding allylated and propargylated diketones 4ac ,4ad and 4ae in 47–90%yields (entries 8–10).1,3-Diphenylpropane-1,3-dione (2b )participated well in the reaction with 1-phenylethanol (3a )and diphenylmethanol (3b )to produce the corresponding ben-zylated diketones 4ba and 4bb in 81–98%yields,without formation of the styrene dimer 5(entries 11and 12).The results of the Bro¨nsted acid ionic liquid-catalyzed reactions of ethyl 3-oxobutanoate (2c ),ethyl 3-oxopentanoate (2d )and ethyl 3-oxo-3-phenylpropanoate (2e )with various alcohols are sum-marized in Table 2.The use of various alcohols 3a –c ,e gave the corresponding benzylated,allylated and propargylated products 4cb ,4cc and 4ce in 76–91%yields (entries 2–4).However,the re-action of 2c with 1-phenylethanol (3a )gave the corresponding ketoester 4ca in 30%yield,together with a moderate amount (40%)of styrene dimer 5,probably due to lower nucleophilicity of ketoester 2c than those of diketones 2a ,b .Other ketoesters 2d ,e also participated well in the catalytic reaction with alcohol 3b to give the corresponding products 4db and 4eb in 89–97%yields (entries 5and 6).Diastereoselectivities of the products 4ca ,4cc and 4ce are quite low.To confirm the reaction mechanism for the formation of styrenedimer 5,the Bro¨nsted acid ionic liquid-catalyzed reaction of 1-phenylethanol (3a )in EMIOTf in the absence of 1,3-dicarbonyl compound 2was carried out,as shown in Scheme 2.Table 1Bro¨nsted acid ionic liquid 1-catalyzed direct benzylation,allylation and prop-argylation of 1,3-diketones 2a ,b with various alcohols 3EMIOTf,100°C,3h1(5mol%)R 34OH R 1R 2O O +32R 1R 2O O R 4R 343a R 3=Ph,R 4=Me 3b R 3=R 4=Ph3c R 3=(E )-PhCH=CH,R 4=Ph 3d R 3=(E )-MeCH=CH,R 4=Me 3e R 3=PhC C,R 4=Ph 2a R 1=R 2=Me 2b R 1=R 2=PhNNEt TfO EMIOTfNNn -Bu BMIBF 4BF 4NNn -Bu BMIPF 6PF 6Yields of isolated products.Values in parentheses show the yields of styrene dimer 5.bBMIBF 4was used in place of EMIOTf.1,10-Oxybis (ethane-1,1-diyl)dibenzene was obtained in 33%yield.cBMIPF 6was used in place of EMIOTf.dIL catalyst 1was not added.eAn eqimolar amount of 2a was used.fTrifluoromethanesulfonic acid was used in place of IL catalyst 1.4-Phenylpentan-2-one was also obtained in 20%yield.PhPh5K.Funabiki et al./Tetrahedron 65(2009)7457–74637458As a result,styrene dimer 5was formed as a sole product in 50%yield.This result can be explained by the following mechanism:(1)protonation of the hydroxyl group of alcohol 3a and successive dehydration produces the benzyl cation,and subsequent deproto-nation gives styrene.(2)The obtained styrene attacks the other benzyl cation,and deprotonation at the b -carbon gives styrene dimer 5.After having successfully developed an efficient benzylation of 1,3-diketones 2a ,b and ketoesters 2c ,d ,e ,we then sought to apply this methodology to the synthesis of highly functionalized 4H -chromene 10via catalytic tandem benzylation,cyclization and de-hydration of the 2-(hydroxy(phenyl)methyl)phenol (3f ),prepared from salicylaldehyde and phenyllithium,as described in Table 3.This catalytic tandem reaction of 3f with diketones 2a ,b and ketoesters 2c ,d ,e proceeded smoothly to produce the corresponding 4H -chromenes,such as 1-(2-methyl-4-phenyl-4H -chromen-3-yl)-ethanone (6af ),(2,4-diphenyl-4H -chromen-3-yl)(phenyl)methanone (6bf ),ethyl 2-methyl-4-phenyl-4H -chromene-3-carboxylate (6cf ),ethyl 2-ethyl-4-phenyl-4H -chromene-3-carboxylate (6df )and ethyl 2,4-diphenyl-4H -chromene-3-carboxylate (6ef ),in good to excellent yields (77–98%),respectively.Furthermore,the Bro¨nsted acid ionic liquid-catalyzed reactions of 1,3-diphenylpropane-1,3-dione (2b )with an equimolar amount of a highly activated tertiary alkynol,1,1,3-triphenylprop-2-yn-1-ol (7),also proceeded smoothly to give not a propargylated product,but rather a dienyl product,1,3-diphenyl-2-(1,3,3-triphenylallyli-dene)propane-1,3-dione (8),in 66%yield,as shown in Scheme 3.Table 3Bro¨nsted acid ionic liquid 1-catalyzed tandem direct benzylation,cyclization and dehydration of 2with the alcohol 3f1(5mol%)R1R 2O O+3f2a R 1=R 2=Me 2b R 1=R 2=Ph2c R 1=Me,R 2=OEt 2d R 1=Et,R 2=OEt 2e R 1=Ph,R 2=OEtEMIOTf,100°C,3hO R 2O 6R 1R 1R 2O O OHOHOH2Yields of isolated products.Table 2Bro¨nsted acid ionic liquid 1-catalyzed direct benzylation,allylation and prop-argylation of ester 2with various alcohols 31(5mol%)R3R 4OH R1O O +32c R 1=Me 2d R 1=Et 2e R 1=PhOEtO O R 4R 343a R 3=Ph,R 4=Me 3b R 3=R 4=Ph3c R 3=(E )-PhCH=CH,R 4=Ph 3e R 3=PhC C,R 4=PhEMIOTf,100°C,3h2R 1Yields of isolated products.Values in parentheses show the yields of styrene dimer 5.bDetermined by GC.PhPhMe 5(50%)PhMeOH EMIOTf,120°C,3h1(5mol%)3a Scheme 2.Proposed reaction mechanism for the formation of 5.EMIOTf,100°C,24h1(5mol%)PhOH PhPhO O +72bPh PhO O Ph 8(66%)PhPh PhPhScheme 3.Bro¨nsted acid ionic liquid 1-catalyzed reaction of 1,3-diphenylpropane-1,3-dione (2b )with tertiary alkynol 7.K.Funabiki et al./Tetrahedron 65(2009)7457–74637459According to the previous report by Sanz et al.,3b this product could be produced by the tandem Meyer–Schuster rearrangement of tertiary alkynol 7,aldol condensation with diketone 2b and de-hydration,as shown in Scheme 4.2.3.Reuse of the Bro¨nsted acid ionic liquid catalyst 1Finally,reuse of the Bro¨nsted acid ionic liquid catalyst 1was carried out,as shown in Scheme 5.After the initial use of the catalyst 1in EMIOTf,the product 4aaand styrene dimer 5were extracted from EMIOTf three times with a mixed solvent of diethyl ether and hexane (1:1).Concentration of the mixed organic layer and purification by column chromatogra-phy gave the product 4aa with a trace amount of 5.Reuse of the catalyst in the second and third cycles gave the product 4aa in al-most the same yield along with a trace amount of 5.3.ConclusionIn conclusion,we have developed a new recyclable Bro¨nsted acid-catalyzed direct benzylation,allylation and propargylation of 1,3-dicarbonyl compounds with various alcohols in an ionic liquid,N -ethyl-N -methyl imidazolium trifluoromethanesulfonate (EMIOTf),without the use of any hazardous or volatile solvents and without any by-product such as salts.Furthermore,this method could also be applied to the tandem benzylation–cyclization–dehydration of 1,3-dicarbonyl compounds to give functionalized 4H -chromenes in good to excellent yields.4.Experimental4.1.General1H (400MHz)or 13C (100MHz)NMR spectra were measured with a JEOL a -400FT-NMR spectrometer in deuteriochloroform (CDCl 3)solution with tetramethylsilane (Me 4Si)as an internal stan-dard.Melting points were obtained on a Yanagimoto MP-S2micro melting point apparatus and are uncorrected.IR spectra were mea-sured on a SHIMADZU FT-IR 8100A spectrometer.HRMS were measured on a JEOL JMS-700mass spectrometer.LRMS were mea-sured on a JEOL JMS-K9mass spectrometer.The pure products were isolated by column chromatography using silica gel (Wakogel C-200,100–200mesh,Wako Pure Chemical Ind.,Ltd.).N -Ethyl-N -methyl imidazolium trifluoromethanesulfonate (EMIOTf)was a gift from the Central Glass Co.,Ltd.All chemicals were of reagent grade and,if necessary,purified in the usual manner prior to use.4.2.Preparation of 1-butyl-3-(3-sulfopropyl)-1H -imidazol-3-ium trifluoromethanesulfonate (1)To propanesultone (3.908g,31.97mmol)in a two-necked flask under argonwas slowly added 1-butylimidazole (4.005g,32.25mmol),and the mixture was stirred for 30min at room temperature.Repeated washing of the obtained solid with toluene (20ml Â5)and Et 2O (20ml Â5),and evaporation under vacuum at room temperature gave 3-(1-butyl-1H -imidazol-3-ium-3-yl)propane-1-sulfonate in 98%yield (7.797g).4.2.1.3-(1-Butyl-1H-imidazol-3-ium-3-yl)propane-1-sulfonateYield 98%;Mp 176.7–177.1 C;IR (KBr)1566(C ]C),1179(SO),1038(SO)cm À1;1H NMR (D 2O,400MHz)d 0.99(t,J ¼7.37Hz,3H,C H 3CH 2CH 2CH 2),1.38(sext,J ¼7.37Hz,2H,CH 3C H 2CH 2CH 2),1.88(quint,J ¼7.37Hz,2H,CH 3CH 2C H 2CH 2),2.32(quint,J ¼7.37Hz,2H,–C H 2CH 2SO 3À),2.80(t,J ¼7.37Hz,2H,–CH 2SO 3À),4.23(t,J ¼7.37Hz,2H,–C H 2N ]), 4.43(t,J ¼7.37Hz,2H,–CH 2N þ^),7.68(d,J ¼15.46Hz,1H,imidazolium-H),7.68(d,J ¼15.46Hz,1H,imidazo-lium-H),9.02(s,1H,imidazolium-H);13C NMR (D 2O,100MHz)d 24.2(s),30.4(s),36.7(s),42.8(s),58.8(s),59.3(s),61.0(s),133.9(s),134.2(s),147.0(s);HRMS found m /z 247.1112,calcd for C 10H 19N 2O 3S:M þH,247.1118.A mixture of 3-(1-butyl-1H -imidazol-3-ium-3-yl)propane-1-sulfo-nate (2.473g,10.0mmol)and trifluoromethanesulfonic acid (1.628g,10.85mmol)was heated to 150 C and stirred at the same temperature for 5h.After being allowed to cool to room temperature,the obtained ionic liquid was washed repeatedly with toluene (20ml Â5)and Et 2O (20ml Â5)to remove non-ionic residues,and dried under vacuum at room temperature to give 1-butyl-3-(3-sulfopropyl)-1H -imidazol-3-ium trifluoromethanesulfonate (1)(3.924g,99%).4.2.2.1-Butyl-3-(3-sulfopropyl)-1H-imidazol-3-ium trifluoromethanesulfonate (1)Yield 99%;IR (neat)3415(SO 3H),1566(C ]C),1227(SO),1170(SO),1030(SO)cm À1;1H NMR (D 2O,400MHz)d 0.92(t,3H,J ¼7.34Hz,Ph OH 7PhPh H +PhOHPhPh Ph -H +PhPhPh Ph O PhPhPh OO PhPhPh HO-H 2OPhPhOO Ph8PhPhPhPh O O2b Scheme 4.Proposed reaction mechanism for the formation of 8.PhOH MeMeO O +initial use 4aa (77), 5 (7)first reuse 4aa (77), 5 (7)second reuse 4aa (75), 5 (5)Product (%)aaYields of isolated productsScheme 5.Reuse of the Bro¨nsted acid ionic liquid catalyst 1.K.Funabiki et al./Tetrahedron 65(2009)7457–74637460C H3CH2CH2CH2),1.33(sext,2H,J¼7.34Hz,CH3C H2CH2CH2),1.87 (quint,J¼7.34Hz,CH3CH2C H2CH2), 2.34(quint,J¼7.34Hz,2H,–C H2CH2SO3À), 2.93(t,2H,J¼7.34Hz,–CH2SO3À), 4.22(t,2H, J¼7.34Hz,–CH2N]),4.38(t,2H,J¼7.34Hz,–CH2Nþ^),7.54(d, 1H,J¼9.42Hz,imidazolium-H),7.54(d,1H,J¼9.42Hz,imidazolium-H),8.82(s,1H,imidazolium-H);13C NMR(D2O,100MHz)d23.2(s),29.4(s),35.8(s),41.8(s),57.9(s),58.4(s),60.1(s),50.2(s),130.3(q, J¼317.9Hz),133.0(s),133.3(s),146.0(s);HRMS found m/z247.1123, calcd for C10H19N2O3S:MÀCF3SO3,247.1116.4.3.Typical procedure for the recyclable Bro¨nsted acid1-catalyzed direct carbon–carbon bond formation of1,3-dicarbonyl compounds with alcoholsA mixture of1-butyl-3-(3-sulfopropyl)-1H-imidazol-3-ium tri-fluoromethanesulfonate(1)(0.060g,0.151mmol),1-phenylethanol (3a)(0.370g,3.029mmol)and pentane-2,4-dione(2a)(1.503g, 15.01mmol)in1-ethyl-3-methyl-1H-imidazol-3-ium trifluorome-thanesulfonate(1ml)under argon was stirred at100 C for3h.The mixture was then cooled to room temperature and extracted from the ionic liquid with a mixed solvent of Et2O/hexane(1:1) (30mlÂ3).After the solvent was removed under reduced pressure, the product was purified by column chromatography on silica gel with hexane/EtOAc(20:1)to give3-(1-phenylethyl)pentane-2,4-dione(4aa)(0.478g,77%)and(E)-but-1-ene-1,3-diyldibenzene(5) (0.022g,7%).4.3.1.3-(1-Phenylethyl)pentane-2,4-dione(4aa)3aYield77%;Mp46.9–47.9 C(lit.43–45 C);R f0.38(hexane/ EtOAc¼5:1);IR(CHCl3)1697(C]O),1722(C]O)cmÀ1;1H NMR (CDCl3,400MHz)d1.16(d,J¼7.00Hz,3H,CHC H3),1.78(s,3H, COCH3),2.22(s,3H,COCH3),3.51–3.59(m,1H,C H CH3),3.99(d, J¼7.00Hz,1H,C H COCH3),7.13–7.26(m,5H,aryl H);13C NMR (CDCl3,100MHz)d21.6(s),30.4(s),30.5(s),41.1(s),77.4(s),127.7 (s),128.0(s),130.0(s),143.8(s),204.1(s),204.2(s);HRMS found m/z204.1151,calcd for C13H16O2:M,204.1154.4.3.2.(E)-But-1-ene-1,3-diyldibenzene(5)3aYield7%;R f0.38(hexane);IR(neat)1600(C]C)cmÀ1;1H NMR (CDCl3,400MHz)d1.38(d,J¼7.00Hz,3H,CHC H3),3.55(quint, J¼7.00Hz,1H,C H CH3),6.30–6.32(m,2H,2Âvinyl H),7.08–7.28(m, 10H,aryl H);13C NMR(CDCl3,100MHz)d21.4(s),42.7(s),126.3(s), 126.4(s),127.2(s),127.4(s),128.6(s),135.3(s),137.7(s),145.7(s); HRMS found m/z208.1259,calcd for C16H16:M,208.1253.4.3.3.1,10-Oxybis(ethane-1,1-diyl)dibenzeneYield33%;dr¼50:50;R f0.60(hexane/CH2Cl2¼1:1);1H NMR (CDCl3,400MHz)d1.31(d,6H,J¼6.52Hz,2ÂCHC H3),1.39(d,6H, J¼6.52Hz,2ÂCHC H3),4.18(q,2H,J¼6.52Hz,2ÂC H CH3),4.46(q, 2H,J¼6.52Hz,2ÂC H CH3),7.13–7.31(m,20H,aryl H);13C NMR (CDCl3,100MHz)d23.9(s),25.6(s),75.3(s),75.5(s),127.1(s),127.2 (s),128.0(s),128.3(s),129.1(s),129.4(s),145.0(s),145.1(s);MS(EI) m/z226(M,7.5%).4.3.4.4-Phenylpentan-2-one11Yield20%;R f0.29(hexane/CH2Cl2¼1:1);IR(neat)1716 (C]O)cmÀ1;1H NMR(CDCl3,400MHz)d1.29(d,3H,J¼7.00Hz, C H3CHPh), 2.09(s,3H,COCH3), 2.68(dd,1H,J¼7.00,16.18Hz, CH2CO), 2.78(dd,1H,J¼7.00,16.18Hz,CH2CO), 2.78(sext, J¼7.00Hz,1H,CH3C H Ph),7.20–7.35(m,5H,aryl H);13C NMR (CDCl3,100MHz)d21.9(s),30.5(s),35.3(s),51.9(s),126.2(s),126.6 (s),128.4(s),146.1(s),207.8(s);MS(EI)m/z162(M,34.3%).4.3.5.3-benzhydrylpentane-2,4-dione(4ab)3aYield94%;Mp114.9–116.1 C(lit.112–114 C);R f0.43(hexane/ CH2Cl2¼1:3);IR(CHCl3)1697(C]O),1719(C]O)cmÀ1;1H NMR (CDCl3,400MHz)d2.00(s,6H,2ÂCOCH3),4.81(d,J¼12.32Hz,1H,C H Ph),4.73(d,J¼12.32Hz,1H,C H COCH3),7.15–7.20(m,2H,aryl H),7.24–7.29(m,8H,arlyl H);13C NMR(CDCl3,100MHz)d30.5(s),52.1 (s),75.4(s),127.9(s),128.6(s),129.8(s),142.1(s),203.8(s);HRMS found m/z266.1308,calcd for C18H18O2:M,266.1307.4.3.6.(Z)-3-(1,3-Diphenylallyl)pentane-2,4-dione(4ac)1Yield90%;Mp83.0–83.8 C(lit.85 C);R f0.20(hexane/ Et2O¼5:1);IR(CHCl3)1682(C]O),1732(C]O)cmÀ1;1H NMR (CDCl3,400MHz)d1.92(s,3H,COCH3),2.25(s,3H,COCH3),4.30–4.37(m,2H,C H COCH3and CHPh),6.16–6.22(m,1H,PhCH]C H), 6.43(d,J¼15.70Hz,1H,PhC H]CH),7.20–7.33(m,10H,aryl H);13C NMR(CDCl3,100MHz)d30.4(s),30.7(s),49.8(s),127.0(s),127.9 (s),128.4(s),128.6(s),129.2(s),129.7(s),129.9(s),132.3(s),137.2 (s),140.7(s),141.9(s),203.4(s),203.5(s);HRMS found m/z 292.1475,calcd for C20H20O2:M,292.1464.4.3.7.(E)-3-(Pent-3-en-2-yl)pentane-2,4-dione(4ad)Yield47%;R f0.18(hexane/Et2O¼5:1);IR(neat)1698(C]O), 1722(C]O)cmÀ1;1H NMR(CDCl3,400MHz)d0.96(d,J¼7.19Hz, 3H,CHC H3),1.62(d,J¼7.19Hz,3H,C H3CH:CH),2.11(s,3H,COCH3), 2.19(s,3H,COCH3), 2.97(sext,J¼7.19Hz,1H,C H CH3), 3.56(d, J¼7.19Hz,1H,C H COCH3),5.19–5.25(m,1H,CH3CH]C H),5.46–5.55 (m,1H,CH3C H]CH);13C NMR(CDCl3,100MHz)d17.8(s),19.0(s), 29.5(s),30.0(s),37.7(s),75.8(s),126.4(s),132.3(s),204.0(s),204.0 (s);HRMS found m/z168.1158,calcd for C10H16O2:M,168.1151. 4.3.8.3-(1,3-Diphenylprop-2-ynyl)pentane-2,4-dione(4ae)3bYield88%;Mp95.4–96.0 C(lit.90–92 C);R f0.50(hexane/ CH2Cl2¼1:3);IR(CHCl3)1701(C]O),1733(C]O)cmÀ1;1H NMR (CDCl3,400MHz)d1.93(s,3H,COCH3),2.39(s,3H,COCH3),4.22(d, J¼10.87Hz,1H,C H Ph),4.67(d,J¼10.87Hz,1H,C H COCH3),7.25–7.42(m,10H,aryl H);13C NMR(CDCl3,100MHz)d28.7(s),31.1(s), 38.0(s),75.6(s),84.9(s),88.0(s),122.7(s),127.7(s),128.1(s),128.2 (s),128.3(s),128.9(s),131.6(s),138.2(s),201.6(s),201.6(s);HRMS found m/z290.1310,calcd for C20H18O2:M,290.1307.4.3.9.1,3-Diphenyl-2-(1-phenylethyl)propane-1,3-dione(4ba)3aYield81%;Mp126.1–126.8 C(lit.126–127 C);R f0.15(hexane/ EtOAc¼20:1);IR(KBr)1683(C]O),1733(C]O)cmÀ1;1H NMR (CDCl3,400MHz)d1.33(d,J¼7.00Hz,3H,CHC H3),4.03–4.11(m, 1H,C H Ph),5.63(d,J¼7.00Hz,1H,C H COPh),7.04(t,J¼7.35Hz,1H, aryl H),7.14(t,J¼7.35Hz,2H,aryl H),7.22–7.26(m,4H,aryl H), 7.35–7.42(m,3H,aryl H),7.52(t,J¼7.35Hz,1H,aryl H),7.73(d, J¼7.35Hz,2H,aryl H),8.02(d,J¼7.35Hz,2H,aryl H);13C NMR (CDCl3,100MHz)d20.5(s),41.5(s),65.0(s),126.9(s),128.0(s), 128.7(s),128.8(s),129.1(s),129.1(s),133.3(s),133.9(s),137.1(s), 137.4(s),144.1(s),194.9(s),195.3(s);HRMS found m/z328.1467, calcd for C23H20O2:M,328.1464.4.3.10.2-Benzhydryl-1,3-diphenylpropane-1,3-dione(4bb)12Yield98%;Mp221.6–222.3 C(lit.228.6–230.2 C);R f0.28 (hexane/CH2Cl2¼1:1);IR(KBr)1661(C]O),1683(C]O)cmÀ1;1H NMR(CDCl3,400MHz)d5.32(d,J¼11.71Hz,1H,C H COPh),6.35(d, J¼11.71Hz,1H,CHPh),7.05(t,J¼7.46Hz,2H,aryl H),7.15(t, J¼7.46Hz,4H,aryl H),7.24(s,4H,aryl H),7.33(t,J¼7.46Hz,4H,aryl H),7.47(t,J¼7.46Hz,2H,aryl H),7.83(d,J¼7.46Hz,4H,aryl H);13C NMR(CDCl3,100MHz)d52.4(s),62.3(s),126.6(s),128.3(s),128.5 (s),128.6(s),128.6(s),133.2(s),136.9(s),141.7(s),194.1(s);HRMS found m/z390.1618,calcd for C28H22O2:M,390.1621.4.3.11.Ethyl2-acetyl-3-phenylbutanoate(4ca)2bYield30%;R f0.63(hexane/EtOAc¼5:1);IR(neat)1717(C]O), 1747(C]O)cmÀ1;1H NMR(CDCl3,400MHz)d0.85(t,J¼7.10Hz, 3H,COOCH2C H3),1.16(d,J¼8.88Hz,3H,CHC H3),1.21(t,J¼7.10Hz, 3H,COOCH2C H3), 1.22(d,J¼8.88Hz,3H,CHC H3), 1.85(s,3H,K.Funabiki et al./Tetrahedron65(2009)7457–74637461COCH3),2.22(s,3H,COCH3),3.44–3.48(m,2H,PhCH),3.67(d, J¼8.88Hz,1H,C H COCH3),3.72(d,J¼8.88Hz,1H,C H COCH3),3.80(q, J¼7.10Hz,2H,COOC H2CH3),4.14(q,J¼7.10Hz,2H,COOC H2CH3), 7.11–7.21(m,10H,aryl H);13C NMR(CDCl3,100MHz)d13.7(s),14.2 (s),20.4(s),20.6(s),29.6(s),29.9(s),39.8(s),40.1(s),61.2(s),61.5 (s),67.0(s),67.6(s),76.8(s),77.1(s),77.4(s),126.8(s),126.9(s), 127.4(s),127.5(s),128.5(s),128.7(s),143.1(s),143.3(s),168.2(s), 168.6(s),202.4(s);HRMS found m/z234.1263,calcd for C14H18O3: M,234.1256.4.3.12.Ethyl2-benzhydryl-3-oxobutanoate(4cb)3aYield91%;Mp87.8–89.0 C(lit.84–86 C);R f0.38(hexane/ CH2Cl2¼1:1);IR(CHCl3)1716(C]O),1738(C]O)cmÀ1;1H NMR (CDCl3,400MHz)d1.00(t,J¼7.10Hz,3H,COOCH2C H3),2.09(s,3H, COCH3),3.98(q,J¼7.10Hz,2H,COOC H2CH3),4.52(d,J¼12.20Hz, 1H,CHPh),4.76(d,J¼12.20Hz,1H,C H COCH3),7.14–7.18(m,2H,arylH),7.23–7.30(m,8H,aryl H);13C NMR(CDCl3,100MHz)d13.4(s),29.7(s),50.5(s),61.2(s),64.9(s),126.5(s),126.6(s),127.4(s),127.5 (s),128.3(s),128.5(s),140.9(s),141.2(s),167.3(s),201.4(s);HRMS found m/z296.1419,calcd for C19H20O3:M,296.1413.Found:C, 76.91;H,6.87.C19H20O3requires C,77.00;H,6.80.4.3.13.(Z)-Ethyl2-acetyl-3,5-diphenylpent-4-enoate(4cc)7Yield76%;R f0.20(hexane/EtOAc¼20:1);IR(neat)1714(C]O), 1741(C]O)cmÀ1;1H NMR(CDCl3,400MHz)d0.93(t,J¼7.10Hz, 3H,COOCH2C H3),1.16(t,J¼7.10Hz,3H,COOCH2C H3),1.99(s,3H, COCH3),2.26(s,3H,COCH3),3.89(q,J¼7.10Hz,2H,COOC H2CH3),4.05(d,J¼10.99Hz,2H,C H COCH3), 4.08(d,J¼10.99Hz,2H,C H COCH3),4.12(q,J¼7.10Hz,2H,COOC H2CH3),4.26(t,J¼10.99Hz, 2H,CHPh),6.18–6.30(m,2H,PhCH]C H),6.39(d,J¼10.99Hz,1H, PhC H]CH),6.43(d,J¼10.99Hz,1H,PhC H]CH),7.12–7.29(m,20H, aryl H);13C NMR(CDCl3,100MHz)d13.3(s),13.7(s),29.4(s),29.5 (s),48.3(s),48.5(s),60.9(s),61.1(s),64.8(s),65.1(s),125.9 (s),125.9(s),126.6(s),126.7(s),127.1(s),127.1(s),127.5(s),127.5(s), 128.0(s),128.2(s),128.4(s),128.8(s),129.0(s),131.0(s),131.3(s), 136.2(s),136.3(s),139.7(s),139.9(s),167.1(s),167.4(s),200.9 (s),201.2(s);HRMS found m/z322.1574,calcd for C21H22O3:M, 322.1570.4.3.14.Ethyl2-acetyl-3,5-diphenylpent-4-ynoate(4ce)3bYield84%;R f0.50(hexane/EtOAc¼15:1);IR(neat)1719 (C]O),1746(C]O)cmÀ1;1H NMR(CDCl3,400MHz)d1.00(t, J¼7.06Hz,3H,COOCH2C H3),1.24(t,J¼7.06Hz,3H,COOCH2C H3), 1.97(s,3H,COCH3),2.39(s,3H,COCH3),3.95(q,J¼7.06Hz,2H, COOC H2CH3), 3.98(d,J¼10.69Hz,1H,C H COCH3), 4.04(d, J¼10.69Hz,1H,C H COCH3),4.22(q,J¼7.06Hz,2H,COOC H2CH3), 4.60(d,J¼10.69Hz,1H,CHPh),4.63(d,J¼10.69Hz,1H,CHPh), 7.20–7.42(m,20H,aryl H);13C NMR(CDCl3,100MHz)d13.8(s), 14.1(s),29.8(s),30.6(s),37.8(s),37.8(s),61.6(s),61.8(s),66.5 (s),66.8(s),84.1(s),84.7(s),88.2(s),88.5(s),122.8(s),123.1(s), 127.6(s),127.7(s),128.1(s),128.2(s),128.2(s),128.2(s),128.3 (s),128.6(s),128.7(s),131.6(s),138.2(s),138.3(s),166.8(s), 167.1(s),200.3(s),200.7(s);HRMS found m/z320.1413,calcd for C21H20O3:M,320.1415.4.3.15.Ethyl2-benzhydryl-3-oxopentanoate(4db)Yield89%;Mp87.8–88.1 C;R f0.38(hexane/CH2Cl2¼1:1);IR (KBr)1714(C]O),1747(C]O)cmÀ1;1H NMR(CDCl3,400MHz) d0.84(t,J¼7.25Hz,3H,COCH2C H3),0.97(t,J¼7.25Hz,3H, COOCH2C H3), 2.18–2.28(m,1H,COC H2CH3), 2.46–2.56(m,1H, COC H2CH3),3.90–4.01(m,2H,COOC H2CH3),4.56(d,J¼12.20Hz, 1H,CHPh),4.82(d,J¼12.20Hz,1H,C H COCH2CH3),7.11–7.32(m, 10H,aryl H);13C NMR(CDCl3,100MHz)d7.1(s),13.6(s),36.6(s), 50.7(s),61.2(s),64.0(s),126.6(s),126.7(s),127.5(s),127.7(s),128.4 (s),128.6(s),141.3(s),141.5(s),167.5(s),204.1(s);MS(EI)m/z292 (MÀH2O,19.3%).4.3.16.Ethyl2-benzhydryl-3-oxo-3-phenylpropanoate(4eb)11Yield97%;Mp137.0–137.5 C(lit.141.9–143.1 C);R f0.54(hex-ane/CH2Cl2¼1:1);IR(KBr)1682(C]O),1730(C]O)cmÀ1;1H NMR (CDCl3,400MHz)d0.93(t,J¼7.12Hz,3H,COOCH2C H3),3.85–3.99 (m,2H,COOC H2CH3),5.08(d,J¼11.83Hz,1H,CHCOPh),5.41(d, J¼11.83Hz,1H,CHPh),7.03–7.07(m,1H,arlyl H),7.12–7.30(m,7H, arlyl H),7.34–7.45(m,4H,arlyl H),7.53–7.57(m,1H,arlyl H),8.00–8.02(m,2H,arlyl H);13C NMR(CDCl3,100MHz)d13.7(s),50.9(s), 59.4(s),61.5(s),126.5(s),126.8(s),127.7(s),128.2(s),128.5(s), 128.6(s),128.6(s),128.7(s),133.5(s),136.6(s),141.7(s),167.7(s), 192.8(s);MS(EI)m/z340(MÀH2O,46.4%).4.4.Typical procedure for the recyclable Bro¨nsted acid1-catalyzed tandem direct benzylation,cyclization and dehydration of the alcohol3fA mixture of1-butyl-3-(3-sulfopropyl)-1H-imidazol-3-ium tri-fluoromethanesulfonate(1)(0.020g,0.050mmol),2-(hydroxy-(phenyl)methyl)phenol(3f)(0.199g,0.994mmol)and pentane-2,4-dione(2a)(0.503g,5.024mmol)in1-ethyl-3-methyl-1H-imidazol-3-ium trifluoromethanesulfonate(1ml)under argon was stirred at 100 C for3h.The mixture was then cooled to room temperature and extracted from the ionic liquid with a mixed solvent of Et2O/hexane (1:1)(30mlÂ3).After the solvent was removed under reduced pressure,the product was purified by column chromatography on silica gel with hexane/CH2Cl2(1:4)to give1-(2-methyl-4-phenyl-4H-chromen-3-yl)ethanone(6af)(0.204g,77%).4.4.1.1-(2-Methyl-4-phenyl-4H-chromen-3-yl)ethanone(6af)Yield77%;R f0.58(hexane/CH2Cl2¼1:4);IR(neat)1682 (C]O)cmÀ1;1H NMR(CDCl3,400MHz)d2.13(s,3H,COCH3),2.43 (s,3H,CCH3),4.99(s,1H,CHPh),6.92–6.99(m,2H,aryl H),7.06–7.14 (m,3H,aryl H),7.19–7.30(m,4H,aryl H);13C NMR(CDCl3,100MHz) d20.5(s),30.5(s),42.6(s),114.5(s),116.7(s),124.9(s),125.2(s), 127.2(s),127.9(s),128.0(s),129.3(s),129.3(s),146.2(s),149.4(s), 159.5(s),199.2(s);HRMS found m/z264.1147,calcd for C18H16O2: M,264.1151.4.4.2.(2,4-Diphenyl-4H-chromen-3-yl)(phenyl)methanone(6bf)Yield98%;Mp152.5–153.0 C;R f0.30(hexane/CH2Cl2¼2:1);IR (KBr)1643(C]O)cmÀ1;1H NMR(CDCl3,400MHz)d5.35(s,1H, CHPh),7.02–7.19(m,9H,aryl H),7.22–7.28(m,4H,aryl H),7.36–7.39 (m,2H,aryl H),7.43–7.51(m,4H,aryl H);13C NMR(CDCl3,100MHz) d43.9(s),114.4(s),116.5(s),124.6(s),126.7(s),127.6(s),127.8(s), 127.9(s),128.1(s),128.6(s),129.1(s),129.3(s),129.5(s),129.7(s), 131.7(s),133.3(s),138.4(s),145.2(s),150.3(s),155.3(s),197.2(s); HRMS found m/z388.1471,calcd for C28H20O2:M,388.1464.4.4.3.Ethyl2-methyl-4-phenyl-4H-chromene-3-carboxylate(6cf)9Yield84%;R f0.75(hexane/CH2Cl2¼1:4);IR(neat)1710 (C]O)cmÀ1;1H NMR(CDCl3,400MHz)d1.16(t,J¼7.12Hz,3H, COOCH2C H3),2.51(s,3H,CCH3),4.02–4.15(m,2H,COOC H2CH3),5.04(s,1H,CHPh),6.94–6.98(m,1H,aryl H),7.00–7.06(m,2H,arylH),7.09–7.15(m,2H,aryl H),7.20–7.24(m,4H,aryl H);13C NMR (CDCl3,100MHz)d13.6(s),19.0(s),41.0(s),59.6(s),105.6(s),115.7 (s),124.0(s),124.3(s),125.9(s),127.0(s),127.3(s),127.9(s),128.7 (s),146.2(s),148.8(s),159.5(s),166.6(s),HRMS found m/z 294.1265,calcd for C19H18O3:M,294.1256.4.4.4.Ethyl2-ethyl-4-phenyl-4H-chromene-3-carboxylate(6df)Yield80%;R f0.50(hexane/CH2Cl2¼1:1);IR(neat)1703 (C]O)cmÀ1;1H NMR(CDCl3,400MHz)d1.17(t,J¼7.30Hz,3H, CCH2C H3),1.29(t,J¼7.30Hz,3H,COOCH2C H3),2.84–3.00(m,2H, CC H2CH3),4.02–4.15(m,2H,COOC H2CH3),5.03(s,1H,CHPh),6.94–6.98(m,1H,aryl H),7.02–7.07(m,2H,aryl H),7.10–7.16(m,2H,arylH),7.21–7.23(m,4H,aryl H);13C NMR(CDCl3,100MHz)d11.9(s),K.Funabiki et al./Tetrahedron65(2009)7457–7463 7462。
半导体制造技术
Semiconductor Manufacturing Technology半导体制造技术Instructor’s ManualMichael QuirkJulian SerdaCopyright Prentice HallTable of Contents目录OverviewI. Chapter1. Semiconductor industry overview2. Semiconductor materials3. Device technologies—IC families4. Silicon and wafer preparation5. Chemicals in the industry6. Contamination control7. Process metrology8. Process gas controls9. IC fabrication overview10. Oxidation11. Deposition12. Metallization13. Photoresist14. Exposure15. Develop16. Etch17. Ion implant18. Polish19. Test20. Assembly and packagingII. Answers to End-of-Chapter Review QuestionsIII. Test Bank (supplied on diskette)IV. Chapter illustrations, tables, bulleted lists and major topics (supplied on CD-ROM)Notes to Instructors:1)The chapter overview provides a concise summary of the main topics in each chapter.2)The correct answer for each test bank question is highlighted in bold. Test bankquestions are based on the end-of-chapter questions. If a student studies the end-of-chapter questions (which are linked to the italicized words in each chapter), then they will be successful on the test bank questions.2Chapter 1Introduction to the Semiconductor Industry Die:管芯 defective:有缺陷的Development of an Industry•The roots of the electronic industry are based on the vacuum tube and early use of silicon for signal transmission prior to World War II. The first electronic computer, the ENIAC, wasdeveloped at the University of Pennsylvania during World War II.•William Shockley, John Bardeen and Walter Brattain invented the solid-state transistor at Bell Telephone Laboratories on December 16, 1947. The semiconductor industry grew rapidly in the 1950s to commercialize the new transistor technology, with many early pioneers working inSilicon Valley in Northern California.Circuit Integration•The first integrated circuit, or IC, was independently co-invented by Jack Kilby at Texas Instruments and Robert Noyce at Fairchild Semiconductor in 1959. An IC integrates multiple electronic components on one substrate of silicon.•Circuit integration eras are: small scale integration (SSI) with 2 - 50 components, medium scale integration (MSI) with 50 – 5k components, large scale integration (LSI) with 5k to 100kcomponents, very large scale integration (VLSI) with 100k to 1M components, and ultra large scale integration (ULSI) with > 1M components.1IC Fabrication•Chips (or die) are fabricated on a thin slice of silicon, known as a wafer (or substrate). Wafers are fabricated in a facility known as a wafer fab, or simply fab.•The five stages of IC fabrication are:Wafer preparation: silicon is purified and prepared into wafers.Wafer fabrication: microchips are fabricated in a wafer fab by either a merchant chip supplier, captive chip producer, fabless company or foundry.Wafer test: Each individual die is probed and electrically tested to sort for good or bad chips.Assembly and packaging: Each individual die is assembled into its electronic package.Final test: Each packaged IC undergoes final electrical test.•Key semiconductor trends are:Increase in chip performance through reduced critical dimensions (CD), more components per chip (Moore’s law, which predicts the doubling of components every 18-24 months) andreduced power consumption.Increase in chip reliability during usage.Reduction in chip price, with an estimated price reduction of 100 million times for the 50 years prior to 1996.The Electronic Era•The 1950s saw the development of many different types of transistor technology, and lead to the development of the silicon age.•The 1960s were an era of process development to begin the integration of ICs, with many new chip-manufacturing companies.•The 1970s were the era of medium-scale integration and saw increased competition in the industry, the development of the microprocessor and the development of equipment technology. •The 1980s introduced automation into the wafer fab and improvements in manufacturing efficiency and product quality.•The 1990s were the ULSI integration era with the volume production of a wide range of ICs with sub-micron geometries.Career paths•There are a wide range of career paths in semiconductor manufacturing, including technician, engineer and management.2Chapter 2 Characteristics of Semiconductor MaterialsAtomic Structure•The atomic model has three types of particles: neutral neutrons(不带电的中子), positively charged protons(带正电的质子)in the nucleus and negatively charged electrons(带负电的核外电子) that orbit the nucleus. Outermost electrons are in the valence shell, and influence the chemical and physical properties of the atom. Ions form when an atom gains or loses one or more electrons.The Periodic Table•The periodic table lists all known elements. The group number of the periodic table represents the number of valence shell electrons of the element. We are primarily concerned with group numbers IA through VIIIA.•Ionic bonds are formed when valence shell electrons are transferred from the atoms of one element to another. Unstable atoms (e.g., group VIIIA atoms because they lack one electron) easily form ionic bonds.•Covalent bonds have atoms of different elements that share valence shell electrons.3Classifying Materials•There are three difference classes of materials:ConductorsInsulatorsSemiconductors•Conductor materials have low resistance to current flow, such as copper. Insulators have high resistance to current flow. Capacitance is the storage of electrical charge on two conductive plates separated by a dielectric material. The quality of the insulation material between the plates is the dielectric constant. Semiconductor materials can function as either a conductor or insulator.Silicon•Silicon is an elemental semiconductor material because of four valence shell electrons. It occurs in nature as silica and is refined and purified to make wafers.•Pure silicon is intrinsic silicon. The silicon atoms bond together in covalent bonds, which defines many of silicon’s properties. Silicon atoms bond together in set, repeatable patterns, referred to asa crystal.•Germanium was the first semiconductor material used to make chips, but it was soon replaced by silicon. The reasons for this change are:Abundance of siliconHigher melting temperature for wider processing rangeWide temperature range during semiconductor usageNatural growth of silicon dioxide•Silicon dioxide (SiO2) is a high quality, stable electrical insulator material that also serves as a good chemical barrier to protect silicon from external contaminants. The ability to grow stable, thin SiO2 is fundamental to the fabrication of Metal-Oxide-Semiconductor (MOS) devices. •Doping increases silicon conductivity by adding small amounts of other elements. Common dopant elements are from trivalent, p-type Group IIIA (boron) and pentavalent, n-type Group VA (phosphorus, arsenic and antimony).•It is the junction between the n-type and p-type doped regions (referred to as a pn junction) that permit silicon to function as a semiconductor.4Alternative Semiconductor Materials•The alternative semiconductor materials are primarily the compound semiconductors. They are formed from Group IIIA and Group VA (referred to as III-V compounds). An example is gallium arsenide (GaAs).•Some alternative semiconductors come from Group IIA and VIA, referred to as II-VI compounds. •GaAs is the most common III-V compound semiconductor material. GaAs ICs have greater electron mobility, and therefore are faster than ICs made with silicon. GaAs ICs also have higher radiation hardness than silicon, which is better for space and military applications. The primary disadvantage of GaAs is the lack of a natural oxide.5Chapter 3Device TechnologiesCircuit Types•There are two basic types of circuits: analog and digital. Analog circuits have electrical data that varies continuously over a range of voltage, current and power values. Digital circuits have operating signals that vary about two distinct voltage levels – a high and a low.Passive Component Structures•Passive components such as resistors and capacitors conduct electrical current regardless of how the component is connected. IC resistors are a passive component. They can have unwanted resistance known as parasitic resistance. IC capacitor structures can also have unintentional capacitanceActive Component Structures•Active components, such as diodes and transistors can be used to control the direction of current flow. PN junction diodes are formed when there is a region of n-type semiconductor adjacent to a region of p-type semiconductor. A difference in charge at the pn junction creates a depletion region that results in a barrier voltage that must be overcome before a diode can be operated. A bias voltage can be configured to have a reverse bias, with little or no conduction through the diode, or with a forward bias, which permits current flow.•The bipolar junction transistor (BJT) has three electrodes and two pn junctions. A BJT is configured as an npn or pnp transistor and biased for conduction mode. It is a current-amplifying device.6• A schottky diode is formed when metal is brought in contact with a lightly doped n-type semiconductor material. This diode is used in faster and more power efficient BJT circuits.•The field-effect transistor (FET), a voltage-amplifying device, is more compact and power efficient than BJT devices. A thin gate oxide located between the other two electrodes of the transistor insulates the gate on the MOSFET. There are two categories of MOSFETs, nMOS (n-channel) and pMOS (p-channel), each which is defined by its majority current carriers. There is a biasing scheme for operating each type of MOSFET in conduction mode.•For many years, nMOS transistors have been the choice of most IC manufacturers. CMOS, with both nMOS and pMOS transistors in the same IC, has been the most popular device technology since the early 1980s.•BiCMOS technology makes use of the best features of both CMOS and bipolar technology in the same IC device.•Another way to categorize FETs is in terms of enhancement mode and depletion mode. The major different is in the way the channels are doped: enhancement-mode channels are doped opposite in polarity to the source and drain regions, whereas depletion mode channels are doped the same as their respective source and drain regions.Latchup in CMOS Devices•Parasitic transistors can create a latchup condition(???????) in CMOS ICs that causes transistors to unintentionally(无心的) turn on. To control latchup, an epitaxial layer is grown on the wafer surface and an isolation barrier(隔离阻障)is placed between the transistors. An isolation layer can also be buried deep below the transistors.Integrated Circuit Productsz There are a wide range of semiconductor ICs found in electrical and electronic products. This includes the linear IC family, which operates primarily with anal3og circuit applications, and the digital IC family, which includes devices that operate with binary bits of data signals.7Chapter 4Silicon and Wafer Preparation8z Semiconductor-Grade Silicon•The highly refined silicon used for wafer fabrication is termed semiconductor-grade silicon (SGS), and sometimes referred to as electronic-grade silicon. The ultra-high purity of semiconductor-grade silicon is obtained from a multi-step process referred to as the Siemens process.Crystal Structure• A crystal is a solid material with an ordered, 3-dimensional pattern over a long range. This is different from an amorphous material that lacks a repetitive structure.•The unit cell is the most fundamental entity for the long-range order found in crystals. The silicon unit cell is a face-centered cubic diamond structure. Unit cells can be organized in a non-regular arrangement, known as a polycrystal. A monocrystal are neatly arranged unit cells.Crystal Orientation•The orientation of unit cells in a crystal is described by a set of numbers known as Miller indices.The most common crystal planes on a wafer are (100), (110), and (111). Wafers with a (100) crystal plane orientation are most common for MOS devices, whereas (111) is most common for bipolar devices.Monocrystal Silicon Growth•Silicon monocrystal ingots are grown with the Czochralski (CZ) method to achieve the correct crystal orientation and doping. A CZ crystal puller is used to grow the silicon ingots. Chunks of silicon are heated in a crucible in the furnace of the puller, while a perfect silicon crystal seed is used to start the new crystal structure.• A pull process serves to precisely replicate the seed structure. The main parameters during the ingot growth are pull rate and crystal rotation. More homogeneous crystals are achieved with a magnetic field around the silicon melt, known as magnetic CZ.•Dopant material is added to the melt to dope the silicon ingot to the desired electrical resistivity.Impurities are controlled during ingot growth. A float-zone crystal growth method is used toachieve high-purity silicon with lower oxygen content.•Large-diameter ingots are grown today, with a transition underway to produce 300-mm ingot diameters. There are cost benefits for larger diameter wafers, including more die produced on a single wafer.Crystal Defects in Silicon•Crystal defects are interruptions in the repetitive nature of the unit cell. Defect density is the number of defects per square centimeter of wafer surface.•Three general types of crystal defects are: 1) point defects, 2) dislocations, and 3) gross defects.Point defects are vacancies (or voids), interstitial (an atom located in a void) and Frenkel defects, where an atom leaves its lattice site and positions itself in a void. A form of dislocation is astacking fault, which is due to layer stacking errors. Oxygen-induced stacking faults are induced following thermal oxidation. Gross defects are related to the crystal structure (often occurring during crystal growth).Wafer Preparation•The cylindrical, single-crystal ingot undergoes a series of process steps to create wafers, including machining operations, chemical operations, surface polishing and quality checks.•The first wafer preparation steps are the shaping operations: end removal, diameter grinding, and wafer flat or notch. Once these are complete, the ingot undergoes wafer slicing, followed by wafer lapping to remove mechanical damage and an edge contour. Wafer etching is done to chemically remove damage and contamination, followed by polishing. The final steps are cleaning, wafer evaluation and packaging.Quality Measures•Wafer suppliers must produce wafers to stringent quality requirements, including: Physical dimensions: actual dimensions of the wafer (e.g., thickness, etc.).Flatness: linear thickness variation across the wafer.Microroughness: peaks and valleys found on the wafer surface.Oxygen content: excessive oxygen can affect mechanical and electrical properties.Crystal defects: must be minimized for optimum wafer quality.Particles: controlled to minimize yield loss during wafer fabrication.Bulk resistivity(电阻系数): uniform resistivity from doping during crystal growth is critical. Epitaxial Layer•An epitaxial layer (or epi layer) is grown on the wafer surface to achieve the same single crystal structure of the wafer with control over doping type of the epi layer. Epitaxy minimizes latch-up problems as device geometries continue to shrink.Chapter 5Chemicals in Semiconductor FabricationEquipment Service Chase Production BayChemical Supply Room Chemical Distribution Center Holding tank Chemical drumsProcess equipmentControl unit Pump Filter Raised and perforated floorElectronic control cablesSupply air ductDual-wall piping for leak confinement PumpFilterChemical control and leak detection Valve boxes for leak containment Exhaust air ductStates of Matter• Matter in the universe exists in 3 basic states (宇宙万物存在着三种基本形态): solid, liquid andgas. A fourth state is plasma.Properties of Materials• Material properties are the physical and chemical characteristics that describe its unique identity.• Different properties for chemicals in semiconductor manufacturing are: temperature, pressure andvacuum, condensation, vapor pressure, sublimation and deposition, density, surface tension, thermal expansion and stress.Temperature is a measure of how hot or cold a substance is relative to another substance. Pressure is the force exerted per unit area. Vacuum is the removal of gas molecules.Condensation is the process of changing a gas into a liquid. Vaporization is changing a liquidinto a gas.Vapor pressure is the pressure exerted by a vapor in a closed container at equilibrium.Sublimation is the process of changing a solid directly into a gas. Deposition is changing a gas into a solid.Density is the mass of a substance divided by its volume.Surface tension of a liquid is the energy required to increase the surface area of contact.Thermal expansion is the increase in an object’s dimension due to heating.Stress occurs when an object is exposed to a force.Process Chemicals•Semiconductor manufacturing requires extensive chemicals.• A chemical solution is a chemical mixture. The solvent is the component of the solution present in larger amount. The dissolved substances are the solutes.•Acids are solutions that contain hydrogen and dissociate in water to yield hydronium ions. A base is a substance that contains the OH chemical group and dissociates in water to yield the hydroxide ion, OH-.•The pH scale is used to assess the strength of a solution as an acid or base. The pH scale varies from 0 to 14, with 7 being the neutral point. Acids have pH below 7 and bases have pH values above 7.• A solvent is a substance capable of dissolving another substance to form a solution.• A bulk chemical distribution (BCD) system is often used to deliver liquid chemicals to the process tools. Some chemicals are not suitable for BCD and instead use point-of-use (POU) delivery, which means they are stored and used at the process station.•Gases are generally categorized as bulk gases or specialty gases. Bulk gases are the relatively simple gases to manufacture and are traditionally oxygen, nitrogen, hydrogen, helium and argon.The specialty gases, or process gases, are other important gases used in a wafer fab, and usually supplied in low volume.•Specialty gases are usually transported to the fab in metal cylinders.•The local gas distribution system requires a gas purge to flush out undesirable residual gas. Gas delivery systems have special piping and connections systems. A gas stick controls the incoming gas at the process tool.•Specialty gases may be classified as hydrides, fluorinated compounds or acid gases.Chapter 6Contamination Control in Wafer FabsIntroduction•Modern semiconductor manufacturing is performed in a cleanroom, isolated from the outside environment and contaminants.Types of contamination•Cleanroom contamination has five categories: particles, metallic impurities, organic contamination, native oxides and electrostatic discharge. Killer defects are those causes of failure where the chip fails during electrical test.Particles: objects that adhere to a wafer surface and cause yield loss. A particle is a killer defect if it is greater than one-half the minimum device feature size.Metallic impurities: the alkali metals found in common chemicals. Metallic ions are highly mobile and referred to as mobile ionic contaminants (MICs).Organic contamination: contains carbon, such as lubricants and bacteria.Native oxides: thin layer of oxide growth on the wafer surface due to exposure to air.Electrostatic discharge (ESD): uncontrolled transfer of static charge that can damage the microchip.Sources and Control of Contamination•The sources of contamination in a wafer fab are: air, humans, facility, water, process chemicals, process gases and production equipment.Air: class number designates the air quality inside a cleanroom by defining the particle size and density.Humans: a human is a particle generator. Humans wear a cleanroom garment and follow cleanroom protocol to minimize contamination.Facility: the layout is generally done as a ballroom (open space) or bay and chase design.Laminar airflow with air filtering is used to minimize particles. Electrostatic discharge iscontrolled by static-dissipative materials, grounding and air ionization.Ultrapure deiniozed (DI) water: Unacceptable contaminants are removed from DI water through filtration to maintain a resistivity of 18 megohm-cm. The zeta potential represents a charge on fine particles in water, which are trapped by a special filter. UV lamps are used for bacterial sterilization.Process chemicals: filtered to be free of contamination, either by particle filtration, microfiltration (membrane filter), ultrafiltration and reverse osmosis (or hyperfiltration).Process gases: filtered to achieve ultraclean gas.Production equipment: a significant source of particles in a fab.Workstation design: a common layout is bulkhead equipment, where the major equipment is located behind the production bay in the service chase. Wafer handling is done with robotic wafer handlers. A minienvironment is a localized environment where wafers are transferred on a pod and isolated from contamination.Wafer Wet Cleaning•The predominant wafer surface cleaning process is with wet chemistry. The industry standard wet-clean process is the RCA clean, consisting of standard clean 1 (SC-1) and standard clean 2 (SC-2).•SC-1 is a mixture of ammonium hydroxide, hydrogen peroxide and DI water and capable of removing particles and organic materials. For particles, removal is primarily through oxidation of the particle or electric repulsion.•SC-2 is a mixture of hydrochloric acid, hydrogen peroxide and DI water and used to remove metals from the wafer surface.•RCA clean has been modified with diluted cleaning chemistries. The piranha cleaning mixture combines sulfuric acid and hydrogen peroxide to remove organic and metallic impurities. Many cleaning steps include an HF last step to remove native oxide.•Megasonics(兆声清洗) is widely used for wet cleaning. It has ultrasonic energy with frequencies near 1 MHz. Spray cleaning will spray wet-cleaning chemicals onto the wafer. Scrubbing is an effective method for removing particles from the wafer surface.•Wafer rinse is done with overflow rinse, dump rinse and spray rinse. Wafer drying is done with spin dryer or IPA(异丙醇) vapor dry (isopropyl alcohol).•Some alternatives to RCA clean are dry cleaning, such as with plasma-based cleaning, ozone and cryogenic aerosol cleaning.Chapter 7Metrology and Defect InspectionIC Metrology•In a wafer fab, metrology refers to the techniques and procedures for determining physical and electrical properties of the wafer.•In-process data has traditionally been collected on monitor wafers. Measurement equipment is either stand-alone or integrated.•Yield is the percent of good parts produced out of the total group of parts started. It is an indicator of the health of the fabrication process.Quality Measures•Semiconductor quality measures define the requirements for specific aspects of wafer fabrication to ensure acceptable device performance.•Film thickness is generally divided into the measurement of opaque film or transparent film. Sheet resistance measured with a four-point probe is a common method of measuring opaque films (e.g., metal film). A contour map shows sheet resistance deviations across the wafer surface.•Ellipsometry is a nondestructive, noncontact measurement technique for transparent films. It works based on linearly polarized light that reflects off the sample and is elliptically polarized.•Reflectometry is used to measure a film thickness based on how light reflects off the top and bottom surface of the film layer. X-ray and photoacoustic technology are also used to measure film thickness.•Film stress is measured by analyzing changes in the radius of curvature of the wafer. Variations in the refractive index are used to highlight contamination in the film.•Dopant concentration is traditionally measured with a four-point probe. The latest technology is the thermal-wave system, which measures the lattice damage in the implanted wafer after ion implantation. Another method for measuring dopant concentration is spreading resistance probe. •Brightfield detection is the traditional light source for microscope equipment. An optical microscope uses light reflection to detect surface defects. Darkfield detection examines light scattered off defects on the wafer surface. Light scattering uses darkfield detection to detectsurface particles by illuminating the surface with laser light and then using optical imaging.•Critical dimensions (CDs) are measured to achieve precise control over feature size dimensions.The scanning electron microscope is often used to measure CDs.•Conformal step coverage is measured with a surface profiler that has a stylus tip.•Overlay registration measures the ability to accurately print photoresist patterns over a previously etched pattern.•Capacitance-voltage (C-V) test is used to verify acceptable charge conditions and cleanliness at the gate structure in a MOS device.Analytical Equipment•The secondary-ion mass spectrometry (SIMS) is a method of eroding a wafer surface with accelerated ions in a magnetic field to analyze the surface material composition.•The atomic force microscope (AFM) is a surface profiler that scans a small, counterbalanced tip probe over the wafer to create a 3-D surface map.•Auger electron spectroscopy (AES) measures composition on the wafer surface by measuring the energy of the auger electrons. It identifies elements to a depth of about 2 nm. Another instrument used to identify surface chemical species is X-ray photoelectron spectroscopy (XPS).•Transmission electron microscopy (TEM) uses a beam of electrons that is transmitted through a thin slice of the wafer. It is capable of quantifying very small features on a wafer, such as silicon crystal point defects.•Energy-dispersive spectrometer (EDX) is a widely used X-ray detection method for identifying elements. It is often used in conjunction with the SEM.• A focused ion beam (FIB) system is a destructive technique that focuses a beam of ions on the wafer to carve a thin cross section from any wafer area. This permits analysis of the wafermaterial.Chapter 8Gas Control in Process ChambersEtch process chambers••The process chamber is a controlled vacuum environment where intended chemical reactions take place under controlled conditions. Process chambers are often configured as a cluster tool. Vacuum•Vacuum ranges are low (rough) vacuum, medium vacuum, high vacuum and ultrahigh vacuum (UHV). When pressure is lowered in a vacuum, the mean free path(平均自由行程) increases, which is important for how gases flow through the system and for creating a plasma.Vacuum Pumps•Roughing pumps are used to achieve a low to medium vacuum and to exhaust a high vacuum pump. High vacuum pumps achieve a high to ultrahigh vacuum.•Roughing pumps are dry mechanical pumps or a blower pump (also referred to as a booster). Two common high vacuum pumps are a turbomolecular (turbo) pump and cryopump. The turbo pump is a reliable, clean pump that works on the principle of mechanical compression. The cryopump isa capture pump that removes gases from the process chamber by freezing them.。
半导体一些术语的中英文对照
半导体一些术语的中英文对照离子注入机ion implanterLSS理论Lindhand Scharff and Schiott theory 又称“林汉德-斯卡夫-斯高特理论”。
沟道效应channeling effect射程分布range distribution深度分布depth distribution投影射程projected range阻止距离stopping distance阻止本领stopping power标准阻止截面standard stopping cross section 退火annealing激活能activation energy等温退火isothermal annealing激光退火laser annealing应力感生缺陷stress-induced defect择优取向preferred orientation制版工艺mask-making technology图形畸变pattern distortion初缩first minification精缩final minification母版master mask铬版chromium plate干版dry plate乳胶版emulsion plate透明版see-through plate高分辨率版high resolution plate, HRP超微粒干版plate for ultra-microminiaturization 掩模mask掩模对准mask alignment对准精度alignment precision光刻胶photoresist又称“光致抗蚀剂”。
负性光刻胶negative photoresist正性光刻胶positive photoresist无机光刻胶inorganic resist多层光刻胶multilevel resist电子束光刻胶electron beam resistX射线光刻胶X-ray resist刷洗scrubbing甩胶spinning涂胶photoresist coating后烘postbaking光刻photolithographyX射线光刻X-ray lithography电子束光刻electron beam lithography离子束光刻ion beam lithography深紫外光刻deep-UV lithography光刻机mask aligner投影光刻机projection mask aligner曝光exposure接触式曝光法contact exposure method接近式曝光法proximity exposure method光学投影曝光法optical projection exposure method 电子束曝光系统electron beam exposure system分步重复系统step-and-repeat system显影development线宽linewidth去胶stripping of photoresist氧化去胶removing of photoresist by oxidation等离子[体]去胶removing of photoresist by plasma 刻蚀etching干法刻蚀dry etching反应离子刻蚀reactive ion etching, RIE各向同性刻蚀isotropic etching各向异性刻蚀anisotropic etching反应溅射刻蚀reactive sputter etching离子铣ion beam milling又称“离子磨削”。
发现它是一种大环聚醚即命名为冠醚它是由于非环聚醚前体与碱
4、配位键的识别和组装
过渡金属的配位几何学以及和配体相互作用位 置的方向性特征,提供了合理组装成各类超分子 的蓝图。
(b)Zn—N键组装成六角形分子盒
下面在晶体工程内容中,将更充分地展示配位 键构筑的超分子体系的多样性。
5、静电识别
Stoddart研究组利用富电子的对苯二酚衍生物 (开链多醚)和缺电子的联吡啶组装,开辟了一种 人工合成索烃、轮烷等复杂结构的有效途径。
1、静电作用
静电作用包括盐键,即带电基团间的作用,如 R—NH3+ … - OOC—R;离子—偶极子作用,偶极 子—偶极子作用等。
2、氢键
氢键在本质上是静电力,常被认为是一种特殊 的范德华力,它常增加超分子的稳定性,具有方 向性和饱和性,在超分子形成和分子识别中具有 重要意义。
(1)常规氢键 X—H …Y (X,Y=F、O、N、C、Cl)
是指一种或多种分子依靠分子间相互作用,自 发地结合起来,形成分立的或伸展的超分子。
1、冠醚和穴状配体的识别和自组装
(1)球形离子大小的识别 不同的冠醚以其大小尺寸和电荷分布适合于不同
大小的球形金属离子,使难以分离的碱金属离子在不 同的冠醚中各得其所。
(2)四面体方向成键的识别
三环氮杂冠醚是一种大三环穴状受体。分子中 有四面体配位点的孔穴,它除具有大小识别功能外, 还能按成键方向选择合适的离子优先进行组装。
超分子化学的奠基者:1987年获诺贝尔化学奖
佩德森Pedersen C:发现冠醚化合物
莱恩Lenh J-M:发现穴醚化合物并提出超分子概念
克拉姆Cram D:主客体化学的先驱者
一、超分子的定义
超分子(supramolecule):通常是指由两种或 两种以上分子依靠分子间的相互作用结合在一起, 组装成复杂的、有组织的聚集体,并保持一定的完 整性,使其具有明确的微观结构和宏观特性。
蛋白质纯化题目整理
名词解释1. 截留分子量(molecular weight cut-off, MWCO):不能通过膜的最小分子量2. 超滤:选择合适孔径的超滤膜,在离心力或较高压力下,使水分子和其他小分子物质通过超滤膜,而目标蛋白样品分子被截留不能通过超滤膜,从而增加蛋白样品浓度,达到浓缩效果的方法3、陶南效应:离子交换剂表面pH与溶液pH是不一致的。
在阳IE表面的微环境中,H+被吸引而OH-被排斥,交换剂表面pH比周围低1个pH单位;而阴IE表面的微环境中,H+被排斥,交换剂表面pH比周围高1个pH单位4、离子交换剂的有效(实际)交换容量:指在一定的实验条件下,每克干介质或每毫升湿胶吸附蛋白质的实际容量5. 聚沉(coagulation)是指在聚沉剂的作用下,溶液中的蛋白质相互聚集为较大在聚沉物(>1mm)的过程•常见的聚沉剂:无机盐类(如氯化锌、氯化铁、氯化铝、硫酸锌、硫酸铝),聚合无机盐(聚合铝、聚合铁等)•聚沉条件:-20℃以下,pH3~6,较高离子强度,高多价金属离子(Fe3+、Al3+)6. 絮凝(flocculation)是指在絮凝剂的作用下,通过吸附、交联、网捕,把蛋白质聚结为大絮体沉降的过程•常见的絮凝剂:淀粉、树脂、单宁、离子交换树脂及纤维素衍生物•絮凝作用一般在聚沉作用之后使用;絮凝剂的选择应根据成本、毒性等具体情况考虑;应通过试验筛选获得最适合的絮凝剂类型、用量及作用条件7、盐溶:蛋白质在稀盐溶液中,溶解度会随着盐浓度的增高而上升8、盐析:但当盐浓度增高到一定数值时,其溶解度又逐渐下降,直至蛋白质析出9、透析:利用小分子能通过,而大分子不能透过半透膜的原理,把不同性质的物质彼此分开的一种方法。
对于蛋白质样品,透析过程中因蛋白质分子体积很大,不能透过半透膜,而溶液中的无机盐小分子则能透过半透膜进入水中,因此不断更换透析用水即可将蛋白质与无机盐小分子物质完全分开。
蛋白的分离纯化过程中常用此法脱去无机盐(如硫酸铵)10、排阻极限:指不能进入凝胶颗粒内部网孔的最小蛋白的分子量11、凝胶颗粒的分级范围:指能进入凝胶颗粒内部网孔的最大分子和最小分子的分子量范围12、过滤:利用多孔介质(滤纸、滤膜等)阻截大的颗粒物质,而使小于孔隙的物质通过的一种的分离方法。
以孔雀石绿为探针电化学分析法测定鲱鱼精DNA
第27卷第2期2006年4月 青 岛 科 技 大 学 学 报Jour nal of Qing dao University of Science and T echno logyV ol.27No.2Apr.2006文章编号:1672-6987(2006)02-0095-04以孔雀石绿为探针电化学分析法测定鲱鱼精DNA胡 轩,焦 奎*,孙 伟,黄大明(青岛科技大学化学与分子工程学院,山东青岛266042)摘 要:在pH7 0的Britto n-Robinson(B-R)缓冲溶液中用电化学分析方法研究了孔雀石绿(M G)与鲱鱼精ds-DNA的相互作用。
循环伏安法表明,MG在-1 0~+1 5V(v s.SCE)范围内有3个氧化还原峰。
加入双链DNA后,由于M G与DNA相互作用,使M G在+0 547V处的氧化峰电流明显降低,而峰电位基本没有改变。
优化了结合反应条件,在最佳条件下,M G氧化峰电流的下降值同DNA的浓度在10 0~100 0mg L-1范围内呈良好线性关系,线性关系方程为 i p( A)=0 066+0 0096c(mg L-1),检测限(3 )为6 0mg L-1。
通过DNA加入前后峰电流的变化,可计算出MG与DNA结合比n(M G) n(DNA)=2 1,结合常数为5 67 108。
关键词:孔雀石绿;DNA;电化学分析中图分类号:O6571 文献标识码:AElectrochemical Determination of Herring S permDNA Using Malachite G reen as ProbeHU Xuan,JIAO Kui,SUN Wei,HUANG Da-ming(Colleg e of Chem istry and M olecular Engineerin g,Qingdao U nivers ity of S cien ce an d T echnology,Qingdao266042,C hina)Abstract:T he inter actio n of malachite gr een(M G)w ith H err ing Sperm do uble-strandedDNA(ds-DNA)in a Britton-Robinson(B-R)buffer solutio n o f pH=7 0w as investig a-ted by electr ochemical method.T he result of cyclic voltamm etry show ed that malachiteg reen had thr ee redo x peaks fro m-1 0V to+1 5V(vs.SCE).T he ox idative peakcurr ent at+0 547V w as decreased after the addition of do uble-str anded DNA(ds-DNA)w her eas w ithout the mo vement o f peak potential.T he decrease of the peak cur-rent w as dir ectly proportional to DNA concentr ation in the range of10 0~100 0mgL-1.The reg ressio n equation w as i p( A)=0 066+0 0096c(mg L-1)and the detec-tion limit w as6 0mg L-1(3 ).It w as calculated that the binding r atio of M G DNAw as2 1and the binding co nstant w as5 67 108.Key w ords:malachite gr een;DNA;electrochem ical determinationDNA(多聚脱氧核苷酸)是生物体内的重要组成物质,是遗传信息的主要载体,与生物的生长、发育、繁殖等正常生命活动及突变、癌变等异常生命活动有关。
博士考试高级动物生物化学试题
博士考试高级动物生物化学试题精选文档 TTMS system office room 【TTMS16H-TTMS2A-TTMS8Q8-2014年攻读博士学位研究生入学考试初试试题答案一、名词解释(20分)(每题4分,中英文回答均可)1. Shine-Dalharno sequence SD序列: mRNA中用于结合原核生物核糖体的序列。
SD序列在细菌mRNA起始密码子AUG上游7-12个核苷酸处,有一段富含嘌呤的碱基序列,能与细菌16SrRNA3'端识别,帮助从起始AUG处开始翻译。
2、Molecular chaperon分子伴侣:细胞中的某些蛋白质分子可以识别正在合成的多肽或部分折叠的多肽并与多肽的某些部位相结合,从而帮助这些多肽转运、折叠或组装,这一类分子本身并不参与最终产物的形成,因此称为分子“伴侣”3、Cori cycle乳酸循环:肌肉收缩通过糖酵解生成乳酸。
在肌肉内无6-P-葡萄糖酶,所以无法催化葡萄糖-6-磷酸生成葡萄糖。
所以乳酸通过细胞膜弥散进入血液后,再入肝,在肝脏内在乳酸脱氢酶作用下变成丙酮酸,接着通过糖异生生成为葡萄糖。
葡萄糖进入血液形成血糖,后又被肌肉摄取,这就构成了一个循环(肌肉-肝脏-肌肉),此循环称为乳酸循环。
4.Melting temperature熔解温度:双链DNA熔解彻底变成单链DNA的温度范围的中点温度。
5. Specific activity比活:用于测量酶纯度时,可以是指每毫克酶蛋白所具有的酶活力,一般用单位/mg蛋白来表示二、简答题(50分)1、简要说明RNA功能的多样性。
(8分)1、RNA在遗传信息翻译中起决定作用。
(mRNA起信使和模板的作用,rRNA起着装配作用,tRNA起转运和信息转换作用)。
2、RNA还具有重要的催化功能。
也就是核酶(酶除了蛋白质还有RNA)的作用。
3、RAN转录后加工和修饰需要各类小RAN和蛋白质复合物。
RNA转录后的信息加工十分复杂,其中包括切割、修剪、修饰、异构、附加、拼接、编辑和再编码等。
欧洲药典7.5版
INDEX
To aid users the index includes a reference to the supplement in which the latest version of a text can be found. For example : Amikacin sulfate...............................................7.5-4579 means the monograph Amikacin sulfate can be found on page 4579 of Supplement 7.5. Note that where no reference to a supplement is made, the text can be found in the principal volume.
English index ........................................................................ 4707
Latin index ................................................................................. 4739
EUROPEAN PHARMACOPபைடு நூலகம்EIA 7.5
Index
Numerics 1. General notices ................................................................... 7.5-4453 2.1.1. Droppers...................
工程热力学10 Reaction rate theories
Thus the 1-1 collision frequency for a give molecule is:
The total number of 1-1 collision per unit volume per unit time is:
10 Reaction rate theories
Chemical kinetics govern the rate which chemical species are created or destroyed via reactions.
Rates are determined by the concentrations of the chemical species involved in the reaction and an experimentally determined rate coefficient k.
Section 10.2: Both can lead to a simple collision theory expression for the reaction rate constant k.
Section 10.3: Transition-state theory is derived.
The number of collisions per unit time is:
Based on a Maxwell-Boltzmann distribution of collision velocities, the average collision frequency:
The average collision frequency of a type 2 molecule with type 1 molecules is:
【吉林大学 生物化学】生化名词解释顺序版
1重要概念解释AAbundance (mRNA 丰度):指每个细胞中mRNA 分子的数目。
Abundant mRNA(高丰度mRNA):由少量不同种类mRNA组成,每一种在细胞中出现大量拷贝。
Acceptor splicing site (受体剪切位点):内含子右末端和相邻外显子左末端的边界。
Acentric fragment(无着丝粒片段):(由打断产生的)染色体无着丝粒片段缺少中心粒,从而在细胞分化中被丢失。
Active site(活性位点):蛋白质上一个底物结合的有限区域。
Allele(等位基因):在染色体上占据给定位点基因的不同形式。
Allelic exclusion(等位基因排斥):形容在特殊淋巴细胞中只有一个等位基因来表达编码的免疫球蛋白质。
Allosteric control(别构调控):指蛋白质一个位点上的反应能够影响另一个位点活性的能力。
Alu-equivalent family(Alu 相当序列基因):哺乳动物基因组上一组序列,它们与人类Alu家族相关。
1Alu family (Alu家族):人类基因组中一系列分散的相关序列,每个约300bp 长。
每个成员其两端有Alu 切割位点(名字的由来)。
α-Amanitin(鹅膏覃碱):是来自毒蘑菇Amanita phalloides 二环八肽,能抑制真核RNA聚合酶,特别是聚合酶II 转录。
Amber codon (琥珀密码子):核苷酸三联体UAG,引起蛋白质合成终止的三个密码子之一。
Amber mutation (琥珀突变):指代表蛋白质中氨基酸密码子占据的位点上突变成琥珀密码子的任何DNA 改变。
Amber suppressors (琥珀抑制子):编码tRNA的基因突变使其反密码子被改变,从而能识别UAG 密码子和之前的密码子。
Aminoacyl-tRNA (氨酰-tRNA):是携带氨基酸的转运RNA,共价连接位在氨基酸的NH2基团和tRNA 终止碱基的3或者2-OH 基团上。
材料专业英语必背词汇
Chapter 1alloy 合金brittle 脆性的ceramic 陶瓷composite 复合材料conductor? 导体crystalline? 晶态的ductility (可)延(展)性,可锻性electronic and magnetic material? 电子和磁性材料element 元素glass 玻璃glass-ceramic 玻璃陶瓷/微晶玻璃insulator 绝缘体materials science and engineering 材料科学与工程materials selection 材料选择metallic 金属的noncrystalline 非晶态的nonmetallic 非金属的oxide 氧化物periodic table 周期表plastic 塑性的、塑料polymer 聚合物property 性能(质)refractory 耐火材料、耐火的semiconductor 半导体silicon 硅steel 钢structural material 结构材料wood 木材Chapter 7aluminum alloy 铝合金gray iron 灰口铁amorphous metal 无定形金属high-alloy steel 高合金钢austenitic stainless steel 奥氏体不锈钢carbon steel 碳钢impact energy 冲击能cast iron 铸铁cold working 冷作加工copper alloy 铜合金magnesium alloy 镁合金creep curve 蠕变曲线malleable iron 可锻铸铁ductile iron 球墨铸铁plastic deformation 塑性变形elastic deformation 弹性变形precious metal 贵金属engineering stress 工程应力precipitation沉淀fatigue curve 疲劳曲线refractory? metal 耐火(高温)金属solution hardening 固溶强化steel 钢white iron 白铁,白口铁superalloy 超合金wrought alloy 可锻(锻造、轧制)合金tensile strength 拉伸强度yield point 屈服点titanium alloy 钛合金yield strength 屈服强度tool steel 工具钢toughness 韧性zinc alloy 锌合金Chapter 8annealing point 退火点linear coefficient of thermal expansion线性热膨胀系数refractory 耐火材料expansion 膨胀silicate 硅酸盐brittle fracture 脆性断裂magnetic ceramic 磁性陶瓷clay 粘土melting range 熔化(温度)范围color 颜色creep 蠕变electronic ceramic 电子陶瓷thermal conductivity 热传导率nucleate 成(形)核optical property 光学性质transparency 透明glass 玻璃viscosity 粘度viscous deformation 粘性变形pure oxide 纯氧化物intermediate 中间体/中间的Chapter 9Chapter 10admixture 外加剂metal-matrix composite金属基复合材料particulate composite 颗粒复合材料polymer-matrix composite 聚合物基复合材料anisotropic 各向异性cement 水泥ceramic-matrix composite 陶瓷基复合材料concrete 混凝土isotropic 各向同性specific strength 比强度wood 木材matrix 基质(体)restriction 限制(定)elongate 拉长(的)/延伸(的)chop 切utility 效用,实用,功用epoxy 环氧树脂requisite 必需的dramatic 生动的vertically 竖直地,直立地dimension 尺寸specify 详细说明inspection 检查,视察interstice 空隙,裂缝identify 认识,鉴定,确定consistent with 与? 一致emphasis 强调,重点,重要性elementary 基本的reverse 相反的bound 限度deflect 偏转appreciation 正确评价,鉴别offset 弥补,抵消,偏移assembly 装配,组装,总成Chapter 11ceramic 陶瓷energy band 能带polymer 聚合物conduction band 导带resistivity 电阻率conductor 导体resistance 电阻current 电流free electron 自由电子glass 玻璃semiconductor 半导体insulator 绝缘体superconductor 超导体metal 金属electrical field strength 电场强度thermocouple 热(电)偶electron 电子voltage 电压spacing 间隔(距)abstract 抽象drift 漂移hypothetical 假(设)定的extension 扩展(充)nature 自然状态conductive to 有助(益)的inability 无能(力)attribute to 归结于agitation 扰动ultimately 最后(终)于ambient 周围的(环境)account for 解释,占多少比例breakdown 崩溃,击穿polarization 极化crystallographic 晶体的,晶体学的exaggerate 夸张(大)induce 诱导constrain 强迫,抑制,约束ensuring 确保,保证transmitter 变送器,发射机Chapter 12impurity 杂质p-type semiconductor? p型半导体charge 电荷exhaustion range 耗尽区charge density 电荷密度collector 集电极transistor 晶体管conductivity 传导率dominate 支配,占优势ambient 周围(环境)的phosphorus 磷polarization 极化excess 过量的,额外的,附加的Chapter 13eddy current 涡流induction 感应(诱导)ferrite 铁氧体,铁素体domain structure 畴结构ferromagnetism 铁磁性metallic magnet 金属磁体magnetic moment 磁矩permeability 导磁性(率)magnetism 磁性transition metal 过渡金属magnetite 磁铁矿(石)magnetization 磁化modest 小的reversible 可逆的distinction (差)区别,特性ingot 铸模,铸块,锭simultaneously 同时发生的deflection 偏转hexagonal 六方晶系的。
半导体器件中英名词解释
carrier injection: The flow of carriers across the space charge region of a pn junction when a voltage is applied.
载流子注入:外加偏压时,pn结体内载流子穿过空间电荷区进入p区或n区的过程。
雪崩击穿:在反向偏置时,势垒区中电场较强。随着反向偏压的增加,势垒区中电场会变得 很强, 使得电子和空穴在如此强的电场加速作用下具有足够大的动能, 以至于它们与势垒区 内原子发生碰撞时能把价键上的电子碰撞出来成为导电电子, 同时产生一个空穴, 新产生的 电子、 空穴在强电场加速作用下又会与晶格原子碰撞轰击出新的导电电子和空穴„„, 如此 连锁反应好比雪崩一样。 这种载流子数迅速增加的现象称为倍增效应。 如果电压增加到一定 值引起倍增电流趋于无穷大,这种现象叫雪崩击穿。
tunneling breakdown/Zener breakdown: Maybe top of the valence band of the p region is higher than the bottom of conduction band of the n region with the reverse bias voltage increases in heavily doped pn junction. The electrons in valence band of the p region can directly reach the conduction band of the n region through the band gap by tunnel effect, to become the carrier in the conduction band. When the reverse bias voltage at the junction increases to a certain extent, tunneling current will sharply
- 1、下载文档前请自行甄别文档内容的完整性,平台不提供额外的编辑、内容补充、找答案等附加服务。
- 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
- 3、如文档侵犯您的权益,请联系客服反馈,我们会尽快为您处理(人工客服工作时间:9:00-18:30)。
ρi/j = (1 ± ∆c)/2, i.e. Ji,j ∼ ρiρj. The dominant magnetic coupling in NaV2O5 is between the rungs of the constituent ladders along b and has contributions from
the exchange constants between rungs along b in the low-
and high-temperature phase respectively. The zig-zag
charge ordering (see Fig. 1) modifies the exchange J∞ as J = J∞(1−∆2c) [4]. Note that the experimental values for J ≈ 441 K (T < TSP ) [15,16] and for J∞ ≈ 529 − 560 K (T > TSP ) [1,17] indicate ∆2c ≈ 0.2, i.e. ∆ ≈ 0.44 [18].
Magnon splitting induced by charge ordering in NaV2O5
Claudius Gros and Roser Valent´ı Institut fu¨r Physik, Universit¨at Dortmund, 44221 Dortmund, Germany.
INTRODUCTION
EXCHANGE COUPLINGS
The physical properties of the quasi one-dimensional (1D) spin-liquid compound NaV2O5 are currently under intense investigation. NaV2O5 is an insulator and its magnetic susceptibility is that of a 1D Heisenberg chain [1]. Below TSP = 34 K a spin-gap opens [1] and the crystallographic unit-cell doubles along the chain-direction (b axis) [2].
sign and the magnitude of these changes depend on the
pattern of the charge ordering. We consider first the ‘zig-
zag’ charge ordering illustrated in Fig. 1. We define ∆c to be the charge order parameter. (1 ± ∆c)/2 are the charge
bexocnhda-nexgceh∼ang√e ρpirρojcρeksρsle,s
∼ (ρiρj where i,
+ j,
ρkρl) and from k, l denote the
ring four
sites of the two rungs [14]. We denote with J and J∞
The occurence of two well defined magnon-branches
The exchange couplings in the dimerized state (T <
TSP ) might differ from those in the homogeneous state (T > TSP ), due to the charge ordering (see Fig. 1). The
The nature of the spin-chains was originally supposed to be an ’in-line’ arrangement of V +4 spin-1/2 ions along the crystallographic b direction, separated by chains of V +5 spin-zero ions [1,3]. Recently though, the notion of NaV2O5 as a quarter filled ladder compound has been proposed [4], based on a redetermination of the crystal structure [4,5] and a subsequent LDA analysis [4]. In this interpretation the electron spins are not localized at V-ions, but distributed over V-O(1)-V molecules [4,6], the rungs of the constituent V-O ladders running along b. This interpretation has found support by recent NMR [7] and Raman [8] measurements, though far-infrared optics have been interpreted as evidence for charged magnons [9].
(February 1, 2008)
arXiv:cond-mat/9809154v2 8 Jan 1999
We consider the effects of charge ordering in NaV2O5 (below TSP ) on the exchange constants and on the magnon dispersion. We show that the experimentally observed splitting of the magnon branches along the a direction is induced by charge ordering. We find that one can distinguish between the proposed ’zig-zag’ and ’in-line’ patterns of charge ordering. Only the zig-zag ordering is consistent with the experimental results regarding (i) the unusual intensity modulation observed in magnetic neutron scattering, (ii) the reduction in the intra-ladder exchange constant below TSP , and (iii) the magnon dispersion along a. We estimate the inter-ladder exchange constant to be 1.01 meV = 11.7 K for T > TSP .
stant Ji,j between two V-sites i and j by perturbation theory,hat Ji,j is linearly dependenent on the respective site occupation factors
PACS numbers: 64.70.Kb, 71.27.+a, 75.10.-b, 75.30.Et
in NaV2O5 along the a direction (perpendicular to the chains), as measured by neutron scattering [15], has come to a surprise and is yet unexplained. Here we propose that the observed splitting of the magnon branch is directly proportional to the square of the charge order parameter, in the case of zig-zag ordering. In the case of in-line charge ordering we find only one magnon branch. We also observe that zig-zag/in-line charge ordering leads to a decrease/increase of the magnetic exchange below TSP along b. Experimentally a decrease of ≈ 20% is observed [16,17]. We finally comment on the unusual intensity modulation observed in neutron-scattering [15] and find it to be consistent/inconsistent with zig-zag/in-line charge ordering.
occupation factors of the two inequivalent V-ions. ∆c = 1
would correspond to complete charge disproportionation, 2V +4.5 → V +5 + V +4.
Following the standard derivation of the exchange con-