MJD148T4G;NJVMJD148T4G;中文规格书,Datasheet资料

DPAK CASE 369C STYLE 1
MARKING DIAGRAM
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ
MJD148, NJVMJD148T4G
ELECTRICAL CHARACTERISTICS (TC = 25C, unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 3) Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS DC Current Gain (Note 3) IC = 10 mAdc, VCE = 5 Vdc IC = 0.5 Adc, VCE = 1 Vdc IC = 2 Adc, VCE = 1 Vdc IC = 3 Adc, VCE = 1 Vdc IC = 2 Adc, IB = 0.2 Adc IC = 2 Adc, VCE = 1 Vdc IC = 250 mAdc, VCE = 1 Vdc, f = 1 MHz hFE 40 85 50 30 − − − 375 − − 0.5 1.1 Vdc Vdc IC = 100 mAdc, IB = 0 VCB = 45 Vdc, IE = 0 VBE = 5 Vdc, IC = 0 VCEO(sus) ICBO IEBO 45 − − − 20 1 Vdc mAdc mAdc Test Conditions Symbol Min Max Unit
MAXIMUM RATINGS
Rating Symbol VCEO VCB VEB IC Value 45 45 Unit Vdc Vdc Vdc Adc Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Continuous Peak Base Current 5.0 4.0 7.0 50 IB mAdc W W/C W W/C C Total Power Dissipation @ TC = 25C Derate above 25C PD 20 0.16 Total Power Dissipation (Note 1) @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 1.75 0.014 TJ, Tstg − 55 to +150 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
Collector−Emitter Saturation Voltage (Note 3) Base−Emitter On Voltage (Note 3) DYNAMIC CHARACTERISTICS Current−Gain−Bandwidth Product
VCE(sat) VBE(on) fT
THERMAL CHARACTERISTICS
Characteristic Symbol RqJC RqJA Max Unit Thermal Resistance, Junction−to−Case 6.25 71.4 C/W C/W Thermal Resistance, Junction−to−Ambient (Note 2) 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
20
30
50 70 100
200 300 500
Figure 2. Collector Saturation Region
2 TJ = 25C 1.6 VOLTAGE (V) 1.2 0.8 0.4 VCE(sat) @ IC/IB = 10 0 1 0.005 0.01 0.020.030.05 0.1 0.20.3 0.5 IC, COLLECTOR CURRENT (A) 2 34 qy, TEMPERATURE COEFFICIENTS (mV/C)
3
−
MHz
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

2
/
MJD148, NJVMJD148T4G
TYPICAL CHARACTERISTICS
hFE, DC CURRENT GAIN (NORMALIZED) 10 5 3 2 1 = 25C 0.5 0.3 0.2 0.1 0.004 0.007 0.01 0.02 0.03 0.05 0.1 0.2 0.3 IC, COLLECTOR CURRENT (A) 0.5 1 2 3 4 − 55C TJ = 150C VCE = 2 V VCE = 10 V
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
+ 2.5 +2 + 1.5 +1 + 0.5 0 − 0.5 −1 − 1.5 −2 qV for VBE
*APPLIES FOR IC/IB hFE/2 *TJ = − 65C to + 150C
*qV for VCE(sat)
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2 V
MJD148, NJVMJD148T4G NPN Silicon Power Transistor
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching applications.
Figure 1. DC Current Gain
VCE, COLLECTOR−EMITTER VOLTAGE (V)
2 TJ = 25C 1.6 1.2 0.8 0.4 0 0.05 0.07 0.1
IC = 10 mA
100 mA
1A
3A
0.2
0.3
0.5 0.7
1
2 3 5 7 10 IB, BASE CURRENT (mA)
/
MJD148, NJVMJD148T4G
103 IC, COLLECTOR CURRENT (mA) 102 101 100 10−1 10−2 VCE = 30 V TJ = 150C 100C REVERSE FORWARD
Features
High Gain − 50 Min @ IC = 2.0 A Low Saturation Voltage − 0.5 V @ IC = 2.0 A High Current Gain − Bandwidth Product − fT = 3.0 MHz Min @
IC = 250 mAdc
POWER TRANSISTOR 4.0 AMPERES 45 VOLTS, 20 WATTS
Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings:
Human Body Model, 3B; > 8000 V Machine Model, C; > 400 V NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable This is a Pb−Free Device*
− 2.5 0.005 0.01 0.020.030.05 0.1 0.20.3 0.5 1 IC, COLLECTOR CURRENT (A)
2
34
Figure 3. “On” Voltages
Figure 4. Temperature Coefficients

3
AYWW J148G
A Y WW J148 G
= Assembly Location = Year = Work Week = Device Code = Pb−Free Package
ORDERING INFORMATION
Device MJD148T4 MJD148T4G NJVMJD148T4G Package DPAK DPAK (Pb−Free) DPAK (Pb−Free) Shipping† 2,500/Tape & Reel 2,500/Tape & Reel 2,500/Tape & Reel
Semiconductor Components Industries, LLC, 2012
February, 2012 − Rev. 7
1
Publication Order Number: MJD148/D
Hale Waihona Puke /ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ