NE67400中文资料

•LOW NOISE FIGURE:

NF = 1.4 dB TYP at f = at 12 GHz

•HIGH ASSOCIATED GAIN:G A = 10 dB TYP at f = 12 GHz

•GATE WIDTH: W G = 280 µm •GATE LENGTH: L G = 0.3 µm

DESCRIPTION

NEC's NE674 is a L to Ku Band low noise GaAs MESFET. This device features a low noise figure with high associated gain,employing a recessed 0.3 micron gate and triple epitaxial technology. The active area of the chip is covered with S i D 2and S i3N 4 for scratch protection and surface stability. This device is suitable for both amplifier and oscillator applications.This device is housed in a solder sealed hermetic, metal ceramic package for high reliability in space applications.

PART NUMBER NE67400PACKAGE OUTLINE

NE67483B SYMBOLS

PARAMETERS AND CONDITIONS UNITS MIN

TYP MAX NF

Noise Figure at V DS = 3 V, I D = 10 mA, f = 4 GHz

dB 0.6 f = 12 GHz dB 1.4 1.6

G A

Associated Gain at V DS = 3 V I D = 10 mA, f = 4 GHz

dB 14.0 f = 12 GHz dB

8.5

10.0

P 1dB

Output Power at 1 dB Gain Compression Point, f = 12 GHz,V DS = 3 V, I DS = 30 mA

dBm 14.5I DSS Saturated Drain Current at V DS = 3 V, V GS = 0 V mA 2040120V GS(OFF)

Gate to Source Cut Off Voltage at V DS = 3 V, I D = 100 µA V -0.5-1.1-3.5g m Transconductance at V DS = 3 V, I D = 10 mA mS 20

50100I GSO Gate to Source Leakage Current at V GS = -5 V

µA 1.0

10R TH (CH-C)

Thermal Resistance (Channel-to-Case) NE67400

°C/W 190 NE67483B

°C/W

450

ELECTRICAL CHARACTERISTICS (T A = 25°C)

California Eastern Laboratories

N o i s e F i g u r e , N F (d B )

Frequency, f (GHz)

A s s o c i a t e d G a i n , G A , (d

B )

2.03.0

1.0

012

16

20

24

8

4

1

2

4

6

810

14

20

30

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FREQ.NF OPT G A ΓOPT (GHz)(dB)(dB)MAG ANG Rn/5020.5517.00.81370.5730.5815.20.7553

0.5140.6014.00.70690.4450.6813.20.67830.3760.7612.60.6597

0.3170.8512.00.641110.2580.9311.50.641230.199 1.0311.00.641360.1410 1.1510.70.641480.1011 1.2610.30.641610.0612 1.4010.00.631730.0513 1.559.60.62-1730.0514 1.709.20.60-1590.0815 1.849.00.57-1450.1516

2.048.60.53-1290.2317 2.188.30.46-1130.3418

2.35

8.0

0.38

-95

0.44

SYMBOLS

PARAMETERS UNITS RATINGS

V DS Drain to Source Voltage V 5.0V GD Gate to Drain Voltage V –6.0I DS Drain Current mA I DSS T CH Channel Temperature °C 175T STG Storage Temperature °C -65 to +175

P T

Total Power Dissipation NE67483B mW 270NE67400

mW

400

TYPICAL PERFORMANCE CURVES (T A = 25°C)

Ambient Temperature, T A (°C)TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

NE67400, NE67483B

ABSOLUTE MAXIMUM RATINGS 1 (T A = 25°C)

TYPICAL NOISE PARAMETERS (T A = 25°C)

V DS = 3 V, I DS = 10 mA (NE67483B)DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

D r a i n C u r r e n t , I D S (m A )

Note:

1. Operation in excess of any one of these conditions may result in permanent damage.

Drain to Source Voltage, V DS (V)

T o t a l P o w e r D i s s i p a t i o n , P T (m W )

SYMBOLS

PARAMETERS UNITS MIN TYP MAX V DS Drain to Source Voltage

V 34I D Drain Current mA 10

30P IN

Input Power

dBm

15

RECOMMENDED OPERATING CONDITIONS (T A = 25°C)

300

200

400

100

050100150200

40

30

20

10

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