2N4126_01中文资料

Max
*MMBT4126 350 2.8 357
Units
mW mW/°C °C/W °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2001 Fairchild Semiconductor Corporation
2N4126/MMBT4126, Rev A
C ibo
1
0.1
0.01 25
50 75 100 TA - AMBIE NT TEMP ERATURE (° C)
125
1 REVERSE BIAS VOLTAGE (V)
10
元器件交易网
2N4126 / MMBT4126
PNP General Purpose Amplifier
Input Impedance
VCE = 10 V f = 1.0 kHz
h re - VOLTAGE FEEDBACK RATIO (x10
10
1
1 0.1
1 I C - COLLECTOR CURRENT (mA)
10
0.1 0.1
1 I C - COLLECTOR CURRENT (mA)
10
元器件交易网
2N4126 / MMBT4126
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current IC = 1.0 mA, IB = 0 IC = 10 µ A, IE = 0 IC = 10 µ A, IC = 0 VCB = 20 V, IE = 0 VEB = 3.0 V, IC = 0 25 25 4.0 50 50 V V V nA nA
I CBO - COLLE CTOR CURRENT (nA) 100 V 10
CB
Common-Base Open Circuit Input and Output Capacitance vs Reverse Bias Voltage
10
C obo
= 25V CAPACITANCE (pF)
8 6 4 2 0 0.1
Thermal Characteristics
Symbol
PD RθJC RθJA
TA= 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N4126 625 5.0 83.3 200
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
元器件交易网
2N4126 / MMBT4126
PNP General Purpose Amplifier
(continued)
Typical Characteristics
V CESAT - COLLECTOR EMITTER VOLTAGE (V)
h F E - TYPICAL PULSED CURRENT GAIN
SMALL SIGNAL CHARACTERISTICS
fT Cibo Ccb hfe NF Current Gain - Bandwidth Product Input Capacitance Collector-Base Capcitance Small-Signal Current Gain Noise Figure IC = 10 mA, VCE = 20 V, f = 100 MHz VEB = 0.5 V, IC = 0, f = 1.0 MHz VCB = 5.0 V, IE = 0, f = 100 kHz IC = 2.0 mA, VCE = 10 V, f = 1.0 kHz IC = 100 µ A, VCE = 5.0 V, RS=1.0 kΩ, f=10 Hz to 15.7 kHz 250 10 4.5 120 480 4.0 dB MHz pF pF
100
Power Dissipation vs Ambient Temperature
1 PD - POWER DISSIPATION (W)
SOT-223
0.75
TO-92
0.5
SOT-23
0.25
0
0
25
50 75 100 TEMPERATURE (o C)
125
150
元器件交易网
TA = 25°C unless otherwise noted
Parameter
Value
25 25 4.0 200 -55 to +150
Units
V V V mA °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
β = 10
- 40 °C
0.6 0.4 0.2 0
125 °C
0.6 0.4 0.2 0 0.1
25 °C 125 °C
V CE = 1V
1
10 100 I C - COLLECTOR CURRE NT (mA)
200
1 10 I C - COLLECTOR CURRENT (mA)
25
Collector-Cutoff Current vs Ambient Temperature
100
1 10 R S - SOURCE RESISTANCE ( kΩ )
100
Switching Times vs Collector Current
500
ts
Turn On and Turn Off Times vs Collector Current
500
t off Ic 10 t on
100 TIME (nS)
V BESAT - BASE EM ITTE R VOLTAGE (V)
Base-Emitter Saturation Voltage vs Collector Current
1 0.8
25 °C
Base Emitter ON Voltage vs Collector Current
1 0.8
- 40 °C
Output Admittance
h oe - OUTPUT ADMITTANCE ( µ mhos) 1000 V CE = 10 V f = 1.0 kHz
元器件交易网
2N4126 / MMBT4126
2N4126
MMBT4126
C
E C B
TO-92
E
SOT-23
Mark: ZF
B
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switching applications at collector currents to 10 µA as a switch and to 100 mA as an amplifier.
(continued)
Typical Characteristics
(continued)
Noise Figure vs Frequency
6 V CE = 5.0V NF - NOISE FIGURE (dB) 5 4 3 2 1 0 0.1