STD4NC50中文资料

STD4NC50

N -CHANNEL 500V -1.3Ω-3.7A TO-251

PowerMESH ™MOSFET

s TYPICAL R DS(on)=1.3Ω

s EXTREMELY HIGH dv/dt CAPABILITY s 100%AVALANCHE TESTED

s NEW HIGH VOLTAGE BENCHMARK s

GATE CHARGE MINIMIZED

DESCRIPTION

The PowerMESH ™II is the evolution of the first generation of MESH OVERLAY ™.The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed,gate charge and ruggedness.

APPLICATIONS

s HIGH CURRENT,HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS)s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER

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INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter

Value Unit V DS Drain-source Voltage (V GS =0)500V V DGR Drain-gate Voltage (R GS =20k Ω)500V V GS Gate-source Voltage

±30V I D Drain Current (continuous)at T c =25o C 3.7A I D Drain Current (continuous)at T c =100o C 2.3A I DM (•)Drain Current (pulsed)

14.8A P tot Total Dissipation at T c =25o

C 50W Derating Factor

0.4W/o C dv/dt(1)Peak Diode Recovery voltage slope 3V/ns

T s tg Storage Temperature

-65to 150

o C T j

Max.Operating Junction Temperature

150

o

C

(•)Pulse width limited by safe operating area

(1)I SD ≤3.7A,di/dt ≤100A/µs,V DD ≤V (BR)DSS ,Tj ≤T JMAX

TYPE V DSS R DS(on)I D STD4NC50

500V

<1.5Ω

3.7A

3

2

1

IPAK TO-251(Suffix ”-1”)

September 19991/8

THERMAL DATA

R thj-case Rthj-amb R thc-sink

T l Thermal Resistance Junction-case Max

Thermal Resistance Junction-ambient Max

Thermal Resistance Case-sink Typ

Maximum Lead Temperature For Soldering Purpose

2.5

100

1.5

275

o C/W

oC/W

o C/W

o C

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I AR Avalanche Current,Repetitive or Not-Repetitive

(pulse width limited by T j max)

3.7A

E AS Single Pulse Avalanche Energy

(starting T j=25o C,I D=I AR,V DD=50V)

220mJ

ELECTRICAL CHARACTERISTICS(T case=25o C unless otherwise specified)

OFF

Symbol Parameter Test Conditions Min.Typ.Max.Unit V(BR)DSS Drain-source

Breakdown Voltage

I D=250µA V GS=0500V

I DSS Zero Gate Voltage

Drain Current(V GS=0)V DS=Max Rating

V DS=Max Rating T c=125o C

1

50

µA

µA

I GSS Gate-body Leakage

Current(V DS=0)

V GS=±30V±100nA ON(∗)

Symbol Parameter Test Conditions Min.Typ.Max.Unit V GS(th)Gate Threshold Voltage V DS=V GS I D=250µA234V R DS(on)Static Drain-source On

Resistance

V GS=10V I D=1.9A 1.3 1.5Ω

I D(o n)On State Drain Current V DS>I D(o n)x R DS(on)ma x

V GS=10V

3.7A DYNAMIC

Symbol Parameter Test Conditions Min.Typ.Max.Unit

g f s(∗)Forward

Transconductance

V DS>I D(o n)x R DS(on)ma x I D=1.9A3S

C iss C os s C rss Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

V DS=25V f=1MHz V GS=0700

85

9

pF

pF

pF

STD4NC50 2/8