STD4NC50中文资料
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STD4NC50
N -CHANNEL 500V -1.3Ω-3.7A TO-251
PowerMESH ™MOSFET
s TYPICAL R DS(on)=1.3Ω
s EXTREMELY HIGH dv/dt CAPABILITY s 100%AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK s
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH ™II is the evolution of the first generation of MESH OVERLAY ™.The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed,gate charge and ruggedness.
APPLICATIONS
s HIGH CURRENT,HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS)s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER
®
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter
Value Unit V DS Drain-source Voltage (V GS =0)500V V DGR Drain-gate Voltage (R GS =20k Ω)500V V GS Gate-source Voltage
±30V I D Drain Current (continuous)at T c =25o C 3.7A I D Drain Current (continuous)at T c =100o C 2.3A I DM (•)Drain Current (pulsed)
14.8A P tot Total Dissipation at T c =25o
C 50W Derating Factor
0.4W/o C dv/dt(1)Peak Diode Recovery voltage slope 3V/ns
T s tg Storage Temperature
-65to 150
o C T j
Max.Operating Junction Temperature
150
o
C
(•)Pulse width limited by safe operating area
(1)I SD ≤3.7A,di/dt ≤100A/µs,V DD ≤V (BR)DSS ,Tj ≤T JMAX
TYPE V DSS R DS(on)I D STD4NC50
500V
<1.5Ω
3.7A
3
2
1
IPAK TO-251(Suffix ”-1”)
September 19991/8
THERMAL DATA
R thj-case Rthj-amb R thc-sink
T l Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
2.5
100
1.5
275
o C/W
oC/W
o C/W
o C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I AR Avalanche Current,Repetitive or Not-Repetitive
(pulse width limited by T j max)
3.7A
E AS Single Pulse Avalanche Energy
(starting T j=25o C,I D=I AR,V DD=50V)
220mJ
ELECTRICAL CHARACTERISTICS(T case=25o C unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min.Typ.Max.Unit V(BR)DSS Drain-source
Breakdown Voltage
I D=250µA V GS=0500V
I DSS Zero Gate Voltage
Drain Current(V GS=0)V DS=Max Rating
V DS=Max Rating T c=125o C
1
50
µA
µA
I GSS Gate-body Leakage
Current(V DS=0)
V GS=±30V±100nA ON(∗)
Symbol Parameter Test Conditions Min.Typ.Max.Unit V GS(th)Gate Threshold Voltage V DS=V GS I D=250µA234V R DS(on)Static Drain-source On
Resistance
V GS=10V I D=1.9A 1.3 1.5Ω
I D(o n)On State Drain Current V DS>I D(o n)x R DS(on)ma x
V GS=10V
3.7A DYNAMIC
Symbol Parameter Test Conditions Min.Typ.Max.Unit
g f s(∗)Forward
Transconductance
V DS>I D(o n)x R DS(on)ma x I D=1.9A3S
C iss C os s C rss Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS=25V f=1MHz V GS=0700
85
9
pF
pF
pF
STD4NC50 2/8