SML901R1AN中文资料
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SML
Parameter
901R1AN 1001R1AN 901R3AN 1001R3AN Unit
Characteristic / Test Conditions / Part Number Min.
Typ.
Max.Unit
BV DSS I DSS I GSS I D(ON)
V GS(TH)R DS(ON)
V DSS I D I DM V GS P D T J , T STJ
Drain – Source Voltage Continuous Drain Current Pulsed Drain Current 1Gate – Source Voltage
Total Power Dissipation @ T case = 25°C Derate above 25°C
Operating and Storage Junction Temperature Range
SML1001R1AN / SML1001R3AN SML901R1AN / SML901R3AN (V GS = ±30V , V DS = 0V)SML1001R1AN / SML901R1AN SML1001R1AN / SML901R3AN
SML1001R1AN / SML901R1AN SML1001R3AN / SML901R3AN
900
1000
900
1000
9.58.538
34
±30230
–55 to 150V A A V W
°C
Drain – Source Breakdown Voltage (V GS = 0V , I D = 250m A)Zero Gate Voltage Drain Current Gate – Source Leakage Current On State Drain Current 2
(V DS > I D(ON)x R DS(ON)Max , V GS = 10V)Gate Threshold Voltage Static Drain – Source On State Resistance 2(V GS =10V , I D = 0.5 I D [Cont.])
1000900
2501000±100
9.58.52
41.11.3
V m A nA A V W
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.2) Pulse Test: Pulse Width < 380m S , Duty Cycle < 2%
STATIC ELECTRICAL RATINGS (T case =25°C unless otherwise stated)
(V GS = 0V , V DS = V DSS )
(V GS = 0V , V DS = 0.8V DSS , T C = 125°C)
Characteristic Test Conditions.
Min.
Typ.Max.Unit C iss C oss C rss Q g Q gs Q gd t d(on)t r t d(off)t f
Characteristic / Test Conditions.
Part Number
Min.
Typ.
Max.Unit 9.5
8.538341.3
32063612002.2
4.5
9
I S I SM V SD t rr Q rr
SML1001R1AN / SML901R1AN SML901R3AN / SML901R3AN SML1001R1AN / SML901R1AN SML1001R3AN / SML901R3AN
Continuous Source Current (Body Diode)Pulsed Source Current 1(Body Diode)Diode Forward Voltage 2(V GS = 0V , I S = – I D [Cont.])Reverse Recovery Time
(I S = – I D [Cont.] , dl s / dt = 100A/m s Reverse Recovery Charge
A
A V
ns m C
Characteristic / Test Conditions / Part Number Min.
Typ.
Max.Unit
2302303834SOA1SOA2I LM
V DS = 0.4 V DSS , I DS = P D / 0.4 V DSS , t = 1 Sec I DS = I DS [Cont.] , V DS = P D / I D [Cont.] , t = 1 Sec
Safe Operating Area Safe Operating Area Inductive Current Clamped
W
A
Characteristic / Test Conditions.Min.
Typ.Max.Unit 0.5330300
R q JC R q JA T L
Junction to Case Junction to Ambient
Max. Lead Temperature for Soldering Conditions: 0.065” from Case for 10 sec.°C/W °C/W °C
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
SAFE OPERATING AREA CHARACTERISTICS
THERMAL CHARACTERISTICS (T case =25°C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.2) Pulse Test: Pulse Width < 380m S , Duty Cycle < 2%3) See MIL–STD–750 Method 3471
Input capacitance Output capacitance
Reverse transfer capacitance Total Gate Charge 3Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–on Delay Time Rise Time
Turn-off Delay Time Fall Time
V GS = 0V V DS = 25V f = 1MHz V GS = 10V I D = I D [Cont.] V DD = 0.5 V DSS V DD = 0.5 V DSS I D = I D [Cont.] V GS = 15V R G = 1.8W
pF
nC ns 24602950360500105160901309.314477015301632649524
48SML1001R1AN / SML901R1AN SML1001R3AN / SML901R3AN