中北大学微电子专业英语1

24sample with uniform donor concentration in thermal equilibrium在热平衡均匀的施主浓度的样品essentially particle基本粒子particular特别的lattice格donor site供体位点crystal晶体incorporated结合thermal motion热运动in the effective mass of在有效质量the influence of crystal lattices is incorporated如果考虑晶体的影响theorem定理constant恒定的boltzmann玻尔兹曼three-dimensional三维kinetic energy动能average thermal velocity平均热运动速度visualize可视化a succession of random scattering from collisions with lattice atoms一系列的晶格原子的碰撞散射scattering centers散射中心the effect of the periodic field established by the lattice atoms has been taken into account by the effective mass由晶格原子建立周期场的影响已被有效质量的考虑the lattice atoms do not deflect the conduction electrons晶格原子不偏离传导电子do not account for the deviation of the atoms from their periodic position不考虑从周期性位置原子的偏差deviation偏差scatter散射deflect偏转the thermal vibrations may be treated quantum-mechanically as discrete particle called phonons, and the collision of phonons with elections and holes is called lattice or phonon scattering热振动可以被视为量子力学的离散粒子称为声子，声子与电子和空穴的碰撞叫做格或声子散射periodic positions周期性位置vibration振动it dominates other scattering processes at and above room temperature in lightly doped silicon它支配着其他散射过程和高于室温的温度在轻掺杂硅most semiconductor devices are operated in this temperature range大多数半导体器件在该温度范围内运行的scattering mechanisms散射机制atom原子the ionized impurity atoms are charged centers that may deflect the free carriers电离杂质原子的电荷的中心，可能偏转自由载流子neutral impurity atoms may introduce scattering中性杂质原子可能引入散射when the free carriers are influenced by the atomic core and orbiting electrons ually, the effect of this scattering当自由载流子的原子核和电子轨道ually影响，这种散射的影响是可以忽略不计coulomb force库仑力carrier densities载流子密度the random motion of electrons leads to a zero net displacement of an electron over a sufficiently long period of time电子的随机运动导致一零的电子净位移在一个足够长的时间a displacement of一个位移sufficiently足够的the mean free path平均自由路径dominate占主导地位will be accelerated along the field将加速沿场an additional velocity component will be superimposed upon the thermal motion of electrons一个额外的速度分量将被叠加在电子的热运动component组件superimposed叠加applied field应用领域thus,current flow is induced induction 感应因此，电流是感应的unlike electrons moving in a vacuum, electrons in a semiconductor under an extermal field do not achieve constant acceleration不同的运动在真空电子，外部电场下半导体电子不实现恒定的加速度the carriers are accelerated by the field and then decelerated by collisions载流子的加速和减速的那场碰撞the drift velocity is a function of the applied field,漂移速度所施加的电场的函数，the magnitude of the velocity can be derived by using the following simple model速度的大小可以通过使用下面的简单模型得出can be derived可以得出by equating the momentum通过等同的动量free flight自由飞行the momentum gained by the electron in the same period通过在同一时期，电子获得动量the equality is valid平等是有效的steady state稳定状态is proportional to是成比例的electron mobility电子迁移率a similar expression can be written for holes in the valence band 一个类似的表达可以在价带空穴写drift漂移negative sign负号的in preceding section在前面的部分thermal vibrations热振动these vibrations disturb lattice periodic potential这些振动干扰晶格周期势lattice scattering becomes dominant at high temperature在高温下的晶格散射成为主导hence the electrons mobility decrease with increasing tempurature 因此，电子迁移率随温度的降低demonstrate证明most pronounced最明显fixed charged ions固定电荷离子curve曲线contribution的贡献mechanisms机制bottleneck瓶颈the subscripts denote the lattice and impurity scattering,respectively下标表示格和杂质散射，分别concentration浓度the insert shows the theoretical temperature dependence of mobility due to both lattice and impurity scatterings插入表明理论迁移率的温度依赖性的由于晶格和杂质散射enhanced impurity scattering增强的杂质散射this corresponds to the lattice-scattering limitation这对应于晶格缺陷note also that也请注意valid有效的velocity速度will be lost through将失去the emission of optical phonons光学声子的发射i.e.,generating a lattice vibration of optical mode即，产生光学晶格振动模式mode model模式模型the field-dependent drift velocity in silicon are plotted in fig.2.4在硅中的场依赖的漂移速度绘制在图2.4which can be approximated by the empirical expression它可以由经验公式近似critical field临界磁场the most striking feature of this curve这条曲线的最显着的特征two separate valleys in the conduction band导带中的两个单独的山谷electrons reside in the low vally where electron motion is slow电子驻留在低谷电子的运动是缓慢的the decrease in velocity with increasing electric field随着电场的速度下降gives rise to a differential negative mobility提出了一个微分/差别的负迁移since a positive resistance consumes power and a negative resistance supplies power,a negative differential mobility may generate ac power,i.e.,oscillation in the microwave regime由于正电阻消耗功率与负电阻提供电源，负微分迁移率可能产生的交流电源，即，在微波体系的振荡this is known as the Gunn effect and is the basis of operation of the Gunn or transfer-electron oscillator这就是众所周知的狄氏效应是对狄或转移电子振荡器运行的基础applied field应用领域produce生产current电流the current flow in the semiconductor bar have n electrons per unit volume在半导体的酒吧电流有N个电子的每单位体积magnitude of electronic charge电子电荷量的大小the cross-sectional area横截面积voltage-to-current ratio电压电流比in addition Eq.(2.10)has been employed此外，方程（2.10）已被使用the resistivity of a semiconductor is an important parameter in device design半导体的电阻率在设备设计的重要参数the deviation from linearity in these curves从这些曲线的线性度偏差is caused by the nonlinear mobility effect由非线性流动的影响the propagation of flower fragrance or the tinting of cup of hot water by adding a tea bag花香或调色杯热水加一袋茶的传播propagation传播air convection or water motion could give rise to our sense 对流的空气或水的运动可以引起我们的感觉give rise to引起perfectly stationary air or water can produce the same effect完全静止的空气或水可以产生相同的效果chemical molecules化学分子a spatial variation of carrier concentration载流子浓度的空间变化current component电流分量is not disturbed不打扰color pigments彩色颜料collisions碰撞ink droplet墨滴tiny微小的schematically示意图the migration of molecules分子的迁移half-width半宽度migrate迁移be permeated with red ink to become uniform light red liquid 洋溢着红墨水成为均匀的淡红色液体concentration gradient浓度梯度have a net tendency有一个净趋势particle diffusion粒子扩散macroscopically宏观的the density of the color pigments is the same throughout颜色的颜料的密度是相同的so that the diffusion stops因而扩散停止distribution分布give rise to引起the diffusion flux obeys Fick's first law扩散通量服从Fick第一定律gradient梯度the total electron and hole currents电流的总的电子和空穴are obtained by adding the drift and diffusion component通过添加扩散和漂移分量these equations will be used throughout the text to characterize semiconductor devices 这些方程将整个文本，用来表征半导体器件that varies in the x derection在x方向的变化finite temperature有限温度a mean free path一个平均自由路径move across the plane在平面上移动is proportional to是成比例的spatial derivative of the electron density的电子密度的空间导数carrier injection载流子注入carrier injection载流子注入in thermal equilibrium the relationship pn=ni2 is valid在热平衡关系的PN = Ni2是有效的excess carriers过剩载流子be introduced to被引入none-equilibrium不平衡optical excitation and forward biasing a p-n junction光激发和正向偏置的p-n结optical光学的；视觉的in case of万一，如果发生Photon phonon光子声子an electron-hole pair is generated产生电子空穴对the magnitude of the excess carrier concentration relative to the majority carrier concentration determines the injection level相对于多数载流子浓度，过剩载流子浓度的大小确定注入级/注入水平relative to相对于Denote表示be seven orders of magnitude是7个数量级Negligibly可以忽略不计the percentage change is only 0.1%变化率只有0.1%is reffer to as low-level injection是指为低级别的注射excess carriers过剩载流子overwhelm压倒be comparable to可比in the figure在图because of the complexities involved in its treatment,we shall be concerned mainly with low-level injection因为涉及的处理的复杂性，我们将主要关注低级别的注射high-level injection is sometime encountered in device operations高层次的注射是在设备操作的时候遇到了generation and recombination process代重组过程（产生与复合过程）restores equilibrium恢复平衡depending on the nature of the recombination process根据复合过程的本质the nature of本质the released energy that results from the recombination process can be emitted as a photon or dissipated as heat to the lattice释放的能量，来自复合过程，可以以一个光子形式发射或以热量形式散失到晶格radiative recombination辐射复合indirect recombination via bandgap recombination centers dominates in indirect bandgap semiconductors通过复合中心的间接复合带隙在间接带隙半导体占主导地位dominate占主导地位the continuous thermal vibration of lattice atoms cause some bonds between neighboring atoms to be broken晶格原子连续的热振动引起相邻原子之间的键被打破valance band价带a valence electron to make an upward transition to一个价电子向上跃迁到reverse process逆过程it is represented by the rate R它是由速率R代表maintained保持they are lined up and no additional crystal momentum is required他们一字排开，没有额外的晶体动量是必需的lifetime of the excess carriers can best be illustrated by the transient response of a device after the sudden removal of the light source过剩载流子的寿命最好被解释为一个器件对光源突然移去后的跃迁响应Throughout始终，贯穿，在…期间，在所有方面decay exponentially指数衰减correspond to对应的show a schematic setup显示一个示意图设置The decay of the conductivity can be observed on a oscilloscope导电性的衰减可以在示波器观察Characteristics of diodes二极管的特性be referred to被称为two-terminal device二端设备the techniques of alloying,epitaxy,diffusion ,and ion implantation have reported in some references to produce the pn junction机械合金化，外延，扩散和离子注入技术在一些参考文献中报道的，产生的pn结wafer晶片a thin aluminum film is evaporated onto a clean n-type silicon wafer,called a substrate,inside a vacuum chamber铝薄膜蒸发到一个干净的n型硅晶片，称为一基板，在一个真空室in a furnace set at about 600℃在炉中Al and Si constitute a eutectic system构成共晶系统form a recrystallized layer形成重结晶层a significant amount of大量的in practice在实践中ion implantation离子注入constitute a eutectic system构成一个共晶体系alloy合金is evaporated onto被蒸发到epitaxy describes the growth technique of arranging atoms in single-crystal fashion upon a crystalline substrate so that the lattice structure of the newly growth film duplicates that of the substrate外延描述的安排单晶方式原子生长技术的结晶基板时，使基板的新生长膜的晶格结构重复的外延生长技术的描述中安排单晶时尚原子在晶体基质使晶格结构的新生长的薄膜基板的副本single-crystal fashion单晶时尚crystalline substrate结晶基板duplicates重复；副本the flexibility of impurity control in the epitaxial film在外延膜的杂质控制的灵活性may be independent of the substrate doping可能是独立的衬底掺杂dopant掺杂剂gaseous atmosphere气体气氛these impurity atoms may come from slices of boron nitride inserted between silicon wafers这些杂质原子可能是氮化硼硅晶圆片之间插入slices片boron nitride氮化硼from slices of从片solid solubility固溶度a beam of dopant ions is accelerated through a desired energy potential ranging between掺杂离子束加速所需的能量通过电位介于before an incident ion loses its Ek,it collides with lattice atoms and the host atoms are dislodged事件发生之前，入射离子失去其EK，它与晶格原子碰撞和晶格原子脱落is aimed at the semiconductor target so that the high-energy ions penetrate the semiconductor surface 针对半导体靶，高能离子穿透半导体表面with the target nuclei and electrons与靶原子核和电子come to rest来休息penetration depth is called the range穿透深度被称为范围kinetic energy动能structural properties结构特性lattice spacing and mass of atoms的晶格间距和质量的原子an amorphous target一种无定形靶into a disordered or amorphous layer在一个无序的或无定形层it is necessary to anneal the semiconductor after implantation to reestablish the crystalline structure 退火注入后的半导体重新建立的晶体结构，有必要a typical doping profile for ion implantation is shown schematically in fig.3.1图3.1示意性地示出一个典型的离子注入的掺杂分布profile轮廓网络轮廓；侧面；概况；侧面图is assumed constant throughout the crystal被假定为恒定的在整个晶体metallurgical junction冶金结it is the net doping profile that determines the energy band diagram它是净掺杂分布确定的能带图net doping profile净掺杂分布is plotted as绘制step approximation步逼近step function阶跃函数dashed line虚线boundary边界as opposed to作为反对the term heterojunction任期异质结homojunction同质结the simplifying approximations permit analytical calculations for many of the device properties 简化近似允许为许多设备性能的分析计算we refer to this as the prototype homojunction我们称这为原型的同质结impurity-induced band-gap narrowing effects are neglected杂质引起的带隙窄化效应被忽视impurity-induced杂质诱导stationary固定的1in the order of 103在数量级为103be sensitive to temperature,illumination,magnetic field,and minute amount of impurity atoms 敏感的温度，光照，磁场，和微量的杂质原子corresponding resistivity相应的电阻率fused quartz and glass have very low conductivities熔融石英和玻璃具有非常低的热导率electronic application电子应用has been investigated已经被研究了shows a portion of the periodic table related to semiconductors显示有关半导体周期表的一部分a portion of一部分those composed of single species of atoms由单一品种的原子组成element semiconductors元素半导体numerous compound semiconductors许多化合物半导体3prior to the invention of the bipolar transistor对双极晶体管的发明之前rectifiers and photodiodes整流器和光电二极管leakage current漏电流leakage current at only moderately elevated temperatures在只有中等程度的升高的温度下的泄漏电流germanium oxide is water soluble and unsuited for device fabrication氧化锗是水溶性的，不适合移动设备的制造silicon become a practical substitute and has now virtually supplanted germanium硅成为一个实用的替代品，现在已几乎取代了锗supplanted取代Substitute替代品can be grown thermally可以热生长device grade silicon设备级别的硅silicon in the form of silica and silicates comprises 25% of the earth's crust,and silicon is second only to oxygen in abundance硅的形式二氧化硅和硅酸盐含有25％的地壳，丰富度仅次于氧in abundance丰富度compound semiconductors化合物半导体optical properties光学性能photonic application amorphous types amorphous光子应用非晶型无定型；非晶型solids may be classified by structure organization into crystalline,polycrystalline,and,amorphous types an amorphous solid does not have a well-define structure;in fact,it is distinguished by its formlessness 固体组织结构，可以被分类成晶型，多晶型，非晶类型无定形固体不具有良好定义的结构，事实上，它的特点是它的无形solar cells太阳能电池consumer electronics消费类电子产品exploratory work is being performed to build amorphous field-effect transistor for large-area display and sensors正在执行探索性工作，建立无定形的大面积显示和传感器的场效应晶体管nevertheless然而in the foreseeable future在可预见的未来insulator绝缘子silicon dioxide二氧化硅is used as a conductor , contact , or gate in transistors作为一个导体，接触，或栅极晶体管5Fashion时尚，时装；时装领域，时尚界；方式，方法；the atoms are arranged in a three-dimensional periodic fashion原子排列在一个三维的周期的方式stray far from远远偏离cubic-crystal unit cells立方晶体单元there is a unit cell that is representative of the entire lattice有一个单元，是代表整个晶格has six equidistant nearest neighboring atoms有六个等距离的近邻原子the dimension a is called the lattice constant被称为尺寸a的晶格常数Dimension尺寸only polonium is crystallized in the simple cubic lattice只有钋是在简单立方晶格的结晶crystals exhibiting bcc lattices include those of sodium and tungsten晶体具有体心立方晶格，包括钠钨aluminum copper gold platinuma diamond lattice structureelement semiconductors铝铜黄金铂金金刚石晶格结构元素半导体it may be seen as two interpenetrating fcc sublattices with one displaced from the other by one-quarter of the distance along a diagonal of the cube它可以被看作是两个互穿的面心立方子晶格有一个位移沿对角线的距离的四分之一adjacent unit cell相邻单元all atoms are identical in a diamond lattice所有的原子是相同的金刚石晶格equidistant等距的tetrahedron四面体GaAs zincblendeGaAs闪锌矿gallium phosphide zinc sulfide cadmium sulfide磷化镓硫化锌硫化镉ABCD planeABCD平面spacings间距the crystal is anisotropic晶体是各向异性are depend on the crystal orientation依赖于晶体取向orientation取向Miller indices米勒指数find the intercepts of the plane on the three Cartesian coordinates in terms of the lattice constant平面上的三个笛卡儿坐标中的晶格常数方面的截距in terms of依据take the reciprocals of these numbers and reduce them to the smallest three integers having the same ratio把这些数字的倒数，减少到最小的三个整数具有相同的比例intercepts the x-axisfor planes of equivalent symmetrysymmetry截取的x轴等效的对称平面对称enclose the result in parentheses as the miller indices for a single plane把括号中的结果为一个单一的平面的米勒指数enclose the result in parentheses as the miller indices for a single planeencloseParentheses结果括在括号内为米勒指数为一个单一的平面括括号some conventions are given as follows一些约定如下be perpendicular to垂直于7 1.3electrons orbiting电子轨道around it它周围positive charge nucleus正电荷的原子核analogous to the relation between the sun and the planets类似于太阳和行星之间的关系bohr postulates that the angular momentum of an electron may assume only certain discrete values which in turn give rise to a set of discrete allowable energy levelsangular momentumgive rise toa set of玻尔假设，一个电子的角动量可假设只有特定的离散值，这反过来又产生一组离散允许的能级角动量?引起?一组these energy levels are derived for the hydrogen atomare derived for这些来自氢原子的能量水平衍生为principal quantum numberelectron binding energy in electronvoltthe corresponding energiesground stateexcited statesthe orbits of the electrons are specified by their energy levelsare specified by主量子数电子伏特的电子结合能相应的能量基态激发态电子的轨道被自己的能量水平指定所指定的accompanied the emission of a quantumquantumcorrespondingbunch together to form shellelectrons shell伴随着发射的量子?量子相应一堆在一起，形成层电子层give rise torepresent tightly bound electronbound electronrepresentinteratomic force or chemical reactionvalence electronsinteratomic bonding引起代表紧密结合电子?束缚电子代表原子力或化学反应价电子原子间的键合relatively freeone may therefore visualize that the nucleus and the two inner shells form the core with an effective charge of +4q相对自由因此，人们可以可视化，原子核和两个内电子层形成一个有效电荷q4核心constituent atoms组成的原子simplification简化description描述orbiting轨道in each constituent atom在各个组成部分的原子if the atom is closely packed如果原子紧密排列packed充满的overlap重叠的resulting resistivity得到的电阻率quartz(sio2)石英（SiO2）electron configuration电子构型covalent bonding共价键nuclei核nucleus核the electrons are bound in their respective tetrahedron lattice电子被束缚在各自的四面体晶格the liberated electrons被释放电子vacancy空位this deficiency may be filled这种空位可以填充fictitious particle虚拟粒子the concept of a hole is analogous to that of a bubble in a liquid 空穴的概念是类似于在液体中的气泡gaseous气态的applicable适用的separated分离的discrete energy levels分立能级free-space permittivity自由空间的介电常数principal quantum number主量子数in a solid ,the atoms are closely packed,so they tend to interact 在固体中，原子紧密排列，所以他们往往相互作用two identical atomsconsist of one doubly degenerate leveldegenerate level两个相同的原子由一个双重简并能级简并能级split into two levels by the interaction between the atoms分割为两个能级被原子之间的相互作用in the case of a solid在固体的情况下discrete energy levelinteratomic spacingoriginating fromlose their identities and merge together分立能级原子间距源自失去他们的个性（身份），并合并在一起reside within the energy bandsdiscrete energy levelDistinct （identical相同的）overlappartiallyand independent mechanismseither is partially filled or overlap the valence band驻留在能带分立能级不同交叠部分?和独立的机制要么是部分填充的或重叠的价带current conduction can readily occur in conductorsreadilyseparation between...and...we designate Ecthe conduction electron is at restthe kinetic energy of a hole is measured downward from Ev导体中电流传导，可以很容易地发生?容易分离...和...之间我们指定EC传导电子处于静止从EV向下一个孔的动能的测量move back and forth along the x-directionthe movement can be described by standing-wave oscillations vibration振动运动可谓驻波振荡沿x方向来回移动volumecubemomentum spaceincremental changethe volume in momentum spacethe volume between two concentric spheresthe factor 2 accounts for the electron spinsaccounts for体积立方体动量空间增量变化在动量空间的体积两个同心的球体之间的体积因素2占电子自旋比例?占...比例we can substitute E for Pdensity of stateat finite temperaturecontinuous thermal agitationan intrinsic semiconductorcontain relatively small amount of impuritiesrelativelyevaluateincremental energy range dE我们可以为P代用e态密度在有限温度下连续热扰动本征半导体含有较少量的杂质?相对评估能量增量的范围by integrating...fromfermi-dirac distribution functionupper shaded areahenceby contrastnearly unitybecause F(E) is an exponentially decreasing function of E Infinity finity有限的substituting intowe obtain forbridge the forbidden gapexternal force or excitationthis np productnote thatshaded areas通过整合...费米- 狄拉克分布函数上阴影区域因此相比之下近团结因为F（E）是一个指数递减函数的E无穷代入我们获得弥合禁带外力或激发本NP产品注意：阴影区an extrinsic semiconductorintrinsic semiconductor非本征半导体本征半导体mass action lawwhich is validnear-exponential temperature dependence质量作用定律这是有效的近指数的温度依赖性denoted Eithe small deviation of Ei from...from here onwe shall use Ei to specify the midgap energy of semiconductor记EI小偏差EI...从这里开始我们将使用EI指定中间带隙的半导体能源graphic procedure图示arsenic atomboron atomshallow donorscomplete ionization砷原子硼原子的浅施主完全离子化arise from产生于the topic of adding excess carriers by means of generation and injection 通过生成和注射的手段增加过剩载流子的话题they are annihilated by recombination他们通过重组被消灭8emerging fieldseveral new fabrication techniques have evolved which helped popularize MEMSnumerous novel devices have been reported in diverse areas of engineering and scienceintegrated device 在不同的领域Actuate新兴领域一些新的制造技术已经进化捧红MEMS无数新奇的设备在工程和科学的不同领域中，已报告集成的器件开动the interdisciplinary nature of MEMS utilizes design,engineering and manufacturing expertise from a wide and diverse range of technical areas 来自微机电系统的跨学科的性质，采用的设计，工程和制造从各种不同技术领域的专业知识///////// 从技术领域的广泛和多样化的跨学科性质的MEMS设计，工程和制造方面的专长，运用utilize利用extensive rangeincorporate MEMS deviceaccelerometers for airbag sensorsinkjet printer headscomputer disk drive read/write headsprojection display chipsblood pressure sensors范围广泛结合MEMS器件安全气囊传感器的加速度计喷墨打印机头计算机的磁盘驱动器的读/写磁头投影型显示芯片血压传感器optical switchesmicrovalvesbiosensorsare manufactured and shipped in high commercial volumes光开关微型阀生物传感器高商业量的制造和运输dramatically affect显著地影响issuse concerning miniaturization关于小型化问题assembly,integration and packaging of MEMS组装，集成和封装的MEMSfundamental fabrication基本的制作photolithography,bulk micromachining,surface micromachining光刻，体微加工，表面微加工high-aspect-ratio micromachining高深宽比的微加工uniting factor of a MEMS device结合因子的MEMS装置review the range of MEMS sensors and actuator审查的MEMS传感器和执行器的范围actuation驱动sophisticated manipulations of silicon and other substrate using micromachining processes硅和其他基材采用微机械加工工艺复杂的操作、、、、、复杂的操作的硅和其它基材采用微机械加工工艺exploit the propertiesmicrosensors detect changes by measuring magnetic,phenomenasignal the microactuatortheir component are usually microscopiclevers,gears,pistons,motors and steam engines利用属性微型检测通过测量磁场，现象的变化给微致动器发信号去。