Non Magnetic Impurities in the Spin-Gap Phase of the Cuprate

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非牛顿流体电学:综述外文文献翻译、外文翻译、中英文翻译

非牛顿流体电学:综述外文文献翻译、外文翻译、中英文翻译

附录A 外文翻译译文:非牛顿流体电学:综述3.在非牛顿流体电泳在第二节讨论了关于电渗流带电表面,如果我们通过想象改变参考系统,带电表面的流体应该是静止的,然后将带电面以速度大小相等但与以前面讨论的亥姆霍兹Smoluchowski的速度方向相反移动。

这种情况下有效地代表了电泳具有很薄的EDL的粒子在一个无限大的非运动牛顿流体范围[17,18,26,34] 。

显然,先前讨论电渗的亥姆霍兹Smoluchowski速度当然也可适用于分析在无限大非牛顿流体域具有薄EDL颗粒的电泳速度,仅仅与它的符号相反,并改变了充电通道壁与带电粒子的潜力。

事实上,支付给非牛顿液体粒子电泳最早的关注可以追溯到30年前Somlyody [ 68 ]提起的一项有关采用非牛顿液体以提供优越的阈值特性的电泳显示器的专利。

在1985年, Vidybida和Serikov [ 69 ]提出关于球形颗粒的非牛顿电泳研究第一个理论解决方案。

他们展示了一个粒子在非牛顿净电泳运动流体可通过以交替的电场来诱导一个有趣的且违反直觉的效果。

最近才被Hsu课题组填补这方面20年的研究空白。

在2003年,Lee[70]等人通过一个球形腔的低zeta电位假设封闭andweak施加电场分析了电泳刚性球形颗粒在非牛顿的Carreau流体的运动。

他们特别重视电泳球形粒子位于中心的空腔特征。

之后,该分析被扩展来研究电泳位于内侧的球面的任意位置的球形颗粒的腔体[71] 。

除了单个粒子电泳外, Hsu[72]等人假设粒子分散潜力在卡罗流体zeta进行了集中的电泳调查分析,并分析了由Lee[73]完成的其它任意潜力。

为了研究在边界上非牛顿流体电泳的影响,Lee[74]等人分析了电泳球状粒子在卡罗体液从带电荷到不带电荷的平面表面,发现平面表面的存在增强了剪切变稀效果,对电泳迁移率产生影响。

类似的分析后来由Hsu等 [75]进行了扩展。

为了更紧密地模拟真实的应用环境,Hsu等人[76]分析了球形粒子的电泳由一个圆柱形的微细界卡罗流体低zeta电位到弱外加电场的条件。

Inorganicnon-metallicmaterials(无机非金属材料)

Inorganicnon-metallicmaterials(无机非金属材料)

Inorganic non-metallic materials(无机非金属材料)Silicon.(1) existing form;Silicon ranks second in the earth's crust, second only to silicon, and is a pro oxygen element, which in nature exists in all its common compounds, silicon and silicatesOxygen.compound formSilicon dioxide(2) atomic structureThe number of nuclear charges of silicon is located in the third periodic group of the periodic table of elementsIt is not easy to lose electrons in the reaction, it is not easy to get the electronic, mainly forming quadrivalence compounds.FourteenVI A(3) physical propertyThere are two kinds of silicon crystals and one is crystal siliconA lustrous, brittle, solid structure similar to that of melting point, hardness, and brittleness, and is a good material(4) chemical propertiesUnder normal temperature, the chemical properties of silicon are inert, and it is difficult to react with other substances except F2, hydrofluoric acid and strong alkali. The chemical equation for the reaction of silicon with NaOH isAmorphousdark grayThere is metalThere is metalhighlargeSemiconductorSi2NaOHH2O===Na2SiO32H2 increases.When heating, the reaction between silicon and nonmetal elements such as O2 and Cl2. The chemical equation of reaction between silicon and O2 is(5) industrial lawIndustrial coke is reduced to SiO2 in the electric furnace to obtain coarse silicon containing a small amount of impuritiesAfter purification of crude silicon, high purity silicon can be obtained(6) main usesSilicon can be used to make transistors, integrated circuits, solar cells, silicon rectifiers, etc., in addition, the use of silicon alloy more widely, can be used as transformers, iron core, acid resistant equipment2. silica(1) form of existence;The natural forms of SiO2 are crystalline and amorphous, collectivelyThe main ingredients are SiO2.(2) structureThe basic structural units of the a.SiO2 crystal, shown below, are tetrahedral structuresSilica, quartz, crystalIn the B. crystal, each Si atom has an oxygen atom around it, each oxygen atom has an Si atom, and the chemical formula is no SiO2 molecule in the crystal42SiO2(3) physical propertyColorless transparent crystalgreatgreatVery highInsoluble(4) chemical properties(5) main usesThe skeleton of the A. information superhighway -;B. quartz crucible, quartz glass, quartz clock and so on;An important component of the C. electronics industry, opticalinstruments;D. craft jewelryLight-guide fiber3. silicic acid (H2SiO3)(1) physical propertyThe white solid(2) chemical propertiesWeak acid: acidity is the ratio of carbonic acid to the chemical equation of NaOH solutionInstability: the heat is easy to dehydrate, and the chemical equation isInsoluble in waterweakH2SiO32NaOH===Na2SiO32H2OH2SiO3SiO2H2O(3) makingalkalinity2NaClH2SiO3 downWhite precipitateredSummary: H2SiO3 is made by reacting soluble silicate with other acids. For example, the ionic equation that reacts with a small amount of CO2 to Na2SiO3 solution is(4) use: "silica gel" can be used as catalyst carrierDesiccant4. silicate(1) conceptA composite of compounds that constitute the main constituent of the earth's crust(2) the simplest silicateNa2SiO3: soluble in water, commonly known as water solution, is the preparation of silica gel and wood fire retardant raw materialsSilicon, oxygen, and metalswater glass(3) representation of compositionThe composition is usually expressed in the form of silica and metallic oxides, which indicate the order of oxides of active metals, oxides of active metals, silica dioxide and water:Sodium silicate (Na2SiO3);Plain glass (Na2CaSi6O14)Na2O SiO2Na2O, CaO, 6SiO2(4) the use of silicateSoil fertility - soil colloids are generally negatively charged and can adsorb NH, K +Silicate products - inorganic non-metallic materials such as ceramics, glass and cementSilicate products have stable properties, high compressive strength, high hardness and high melting point. Most of them are difficult to dissolve in water5. inorganic non-metallic materialsCommon silicate products - ceramics, glass, and cement - are the most widely used inorganic non-metallic materials(1) ceramicsThe main ingredients are(2) ordinary glass;The main ingredients are, andClaySodalimestonequartz(3) cementThe main ingredients are(4) silicon containing material with special function Emery (chemical formula is SiC)Silicon steelSilicone rubberMolecular sievesClayLimestone(5) new inorganic non-metallic materials;Besides the advantages of the traditional inorganicnon-metallic materials, the new inorganic non-metallic materials also have some special structures and special functions, such as high temperature structural ceramics, bioceramics and piezoelectric ceramics1. in the water and the concentrated nitric acid hydrofluoric acid and potassium hydroxide solution in aqua regia, and silica chemical reaction (a)A.,B. IIC.,D.Analysis: silica is an acid oxide, and can react with alkali solution, not with nitric acid, hydrochloric acid and other acid reaction, but can react with hydrofluoric acid; silica insoluble in water, nor react with waterAnswer: C2. at room temperature silica is a hard solid, while carbon dioxide is a gasA. silicon is less nonmetallic than carbonB. silicon has certain non-metallic properties, while carbon is typical of non metalsC. the chemical bond between silicon and oxygen in silicon dioxide and the chemical bonds of carbon and oxygen in carbon dioxide are differentD. silicon dioxide is an atomic crystal, and carbon dioxide is a molecular crystalAnalysis: the existence of compounds at ambient temperature depends on their melting and boiling points. The melting point and boiling point of SiO2 and CO2 are different, mainly due to the difference in crystal types between the twoAnswer: D3., the manufacture of solar cells requires high-purity silicon, industrial production of high-purity silicon is usually achieved by the following reactions:In the narrative of the above two reactions, the error is ()A. two reactions are replacement reactionsB. reaction is endothermic reactionC. two reactions are reversible reactionsD. two reactions are redox reactionsAnalysis: (1) the reaction is reverse; exothermic reaction is inevitable; endothermic reaction is inevitable; the condition is different; it can not be called reversible reactionAnswer: CComparison of 1. carbon and siliconComparison of 2.CO2 and SiO2[example 1] for group IV group A elements, the following statement is incorrect ()In A.SiO2 and CO2, covalent bonds are between Si and O, between C and OThe outermost electrons of B.C, Si and Ge are 4, and the outer electron number is 8Both C.CO2 and SiO2 are acidic oxides and react with calcium oxide under certain conditionsThe main elements are the valence of D. and 4 + 2I need to carefully analyze the key features of a fourth A elements CO2, SiO2 atomic structure and solve the problems, and then based on the structure determines the nature of analysis, but also pay attention to the common points of CO2, SiO2 and the nature of the differences.The outermost electron number of C is 2, Ge the number of valence electrons is 18, so B is not correct.CO2 and SiO2 are covalent compounds, acidic oxide, so A and C correctly. The main valence IV A group elements as + 4 valence and valence of 2, D is correct.Answer: B1. the following is true about carbon and siliconA. and its oxides can react with NaOH solutionB. its simple substance can react with O2 when it is heatedC. its oxides are soluble in water and produce the corresponding acidD., carbon and silicon, two elements, two kinds of simple substanceAnalysis: CO with NaOH solution reaction; SiO2 can not dissolve in water, does not generate the corresponding acid; diamond, graphite and other carbon allotropes, silicon crystal silicon and amorphous silicon, so there are a variety of elements.Answer: B2. the following statement is incorrectBoth A.SiO2 and CO2 are acidic oxides and can react with NaOH solutionsB.SiO2 does not react with any acidC.SiO2 and CO2 can react with CaO under certain conditionsD.SiO2 is insoluble in water, while CO2 reacts with water to form H2CO3Resolution: SiO2 is an acid oxide, but reacts with HF solution to form SiF4 and H2O.Answer: B1. silicic acid and its saltsThey can be shrunk intermolecular complex form. Therefore, the silicate species, complex composition. Their composition, often in the form of oxides, such as potassium micaK2H4Al6Si6O24 can be written as K2O - 3Al2O3 - 6SiO2 - 2H2O.(1) order of oxides: reactive metal oxides - more active metal oxides - silica - water(2) the principle of the distribution of oxide coefficients: the configuration coefficient of the elements in the outer element and the other elements under the conservation principle of the number of atoms before and after the configurationNote: the oxides are separated by ".". The coefficient configuration shall be divided into integral numbers2. silicate products[examples 2] silicon elements and their compounds have a wide range of applications. Please answer the following questions:(1) the preparation of silicon semiconductor material must first obtain high purity silicon. Three (SiHCl3) reduction is the main method for the preparation of high-purity silicon at present. The production process is as follows:Write the chemical reaction equation______________________________________. for preparation of high-purity silicon by pure SiHCl3The whole preparation process must be strictly controlled in anhydrous water.SiHCl3 reaction to produce H2SiO3, HCl and other substances, write the chemical reaction equation________________________ trim; H2 SiHCl3 reduction process if mixed with O2, the possible consequences are____________________.(2) the silicon material is correct to say that ________ (fill).A. silicon carbide is chemically stable and can be used in the production of high temperature resistant cementB. silicon nitride has high hardness and high melting point. It can be used to make high temperature ceramics and bearingsC. high purity silica can be used to produce high performance communication materials - optical fibersD. ordinary glass is made of soda ash, limestone and quartz sand, and has a high melting pointE. hydrochloric acid can react with silicon, so hydrochloric acid is used as polishing liquid to polish monocrystalline silicon(3) sodium silicate aqueous solution commonly known as water glass. Take a small amount of sodium silicate aqueous solution in a test tube, by the dropwise addition of saturated ammonium chloride solution, oscillation. Write the experiment phenomenon and explain __________________________________I answer the questions to understand the principle of each step for producing high purity silicon in the process, at the same time to pay attention to the application of redox reaction, hydrolysis of salts and other knowledge, but also the application of silicon material and memorizing common silicate industry.Analysis: (1) SiHCl3 and H2 react with 1357K to generate Si and HCl, and then write the corresponding formulaThe violent reaction of SiHCl3 and water to produce H2SiO3, HCl and other substances, they change valence analysis,And the valence of Cl did not change, so the other elements that the valence of H will decrease, which is another matter for H2.H2 SiHCl3 reduction process if mixed with O2, may cause an explosion at the same time, O2 may be the oxidation of SiHCl3.(2) silicon carbide and silicon nitride as atomic crystal, A, B; SiO2 can be used for the manufacture of optical fiber, C; glass is a glass material, no fixed melting point. Hydrochloric acid could not react with the silicon, and HCl above 573K temperature can react with silicon, so D and E is not correct.(3) Na2SiO3 and NH4Cl hydrolysis promote each other, resulting in H2SiO3 precipitation and NH3.The SiHCl33H2O===H2SiO3: 3HCl = = + H2 oxygen and hydrogen mixture, may cause an explosion; oxygen may oxidize SiHCl3(2) BC(3) the phenomenon is that white flocculent precipitate is produced in the test tube, and stimulating gas is generatedInterpretation: both Na2SiO3 and NH4Cl can hydrolyze, and the two promote each other, Na2SiO3 hydrolysis generates H2SiO3, and NH4Cl hydrolysis produces NH3(1) the complex silicate is recast into an oxide form:KAlSi3O8__________________________________.Al2Si2O5 (OH) 4_________________.(2) the reason of this reaction can occur is ______.Analysis: (1) according to the principle of silicate recast oxides can be obtained:KAlSi3O6, K2O, Al2O3, 6SiO2II. Al2Si2O5 (OH) 4 - Al2O3 2H2O 2SiO2(2) the principle of the reaction is to prepare weak acids from stronger acidsAnswer: (1) K2O, Al2O3, 6SiO2Al2O3, 2SiO2, 2H2O(2) because weak acid is stronger than silicic acid, weak acid can be prepared by stronger acidMethods: Portland in whatever form, its composition and composition is fixed, the nature is the same; Portland expressed in the form of oxides, must follow the same principle. The valence force weak "is an important law, can be used to explain the causes of metathesis reaction and redox reaction response.It is known that SiO2, SO2 and CO2 are acidic oxides, and their chemical properties are similar. The chemical properties of Mg and Na are similarMg and SO2 experiments using the device shown above, where A is the device for the generation of SO2(1) select the appropriate ________. reagent preparation of SO2 (in number)10% H2SO4 solution 80% H2SO4 solutionNa2SO3 solid, CaSO4 solid(2) write the main reaction mechanism in B chemical formula ________________.The solution of NaOH device in the C is _________________.(3) please draw the device for preparing the SO2 in the drawing and indicate the name of the main instrument. The fixed instrument is omitted(4) what do you think is the shortage of this device?__________________.II. A research study group of "research laboratory Si", they are based on the textbook, access to information obtained the following information for reference: the industry at high temperature by C reduction can be made of SiO2 Si Mg can be ignited under the condition of the reaction with SiO2 and thin metal silicide H2SO4 SiH4 and the Si reaction of sulfate and SiO2 are not with dilute H2SO4 reaction. SiH4 spontaneous combustion in the air.They are documented in the research report:"...... Select the suitable substance to react adequately under suitable conditions, then dissolve the solid product with enough dilute sulfuric acid, then filter, wash, dry, and finally weigh...... When a solid product is dissolved in dilute sulfuric acid, adetonation sound and a spark are found, and the yield is only about 63% of the expected value"(5) the group of chemical formula Si laboratory "is________________________.(6) do you estimate "with dilute sulfuric acid dissolved solid product, that causes detonation and spark" is_______________________________.Answer: (1) 2(3) as shown(4) no drying device is connected between A and B; the C device is not communicated with the atmosphere; a stainless steel sheet is not inserted below the magnesium; the magnesium reacts with the glass tube; an anti dumping device is not designed1. (2009 Sichuan science college entrance examination) the development of new materials is one of the direction of development of modern science and technology. Materials related to the following statement is true ()A. silicon nitride ceramic is a new inorganic non-metallic materialB.C60 belongs to atomic crystals and is used in the manufacture of nanomaterialsC. cellulose acetate belongs to natural macromolecule materialD. monocrystalline silicon is commonly used in manufacturing optical fibersResolution: B term, C60 belongs to molecular crystal; C term, cellulose acetate is not a natural polymer material; D term, silica is commonly used in the manufacture of optical fibersAnswer: A2. experiment with 4 kinds of solutions, and the error of "operation" and "phenomenon" in the following table is corresponding to "solution"Analysis: the CO2 is passed into the C6H5ONa solution, because it is generated` cloudy, when higher than 65 DEG C, phenol soluble in water, so the solution becomes clear, A; Na2SiO3 solution to pass into the CO2 will generate H2SiO3 white precipitate when CO2 is excessive, precipitation does not disappear, B error; Ca (ClO) 2CO2H2O===CaCO3 down 2HClO, so generating CaCO3 precipitation, solution turbidity, HClO will fade fuchsin oxidation, C;D chemical reaction: Ca (OH) 2 + CO2===CaCO3 + CaCO3 + H2O: H2O + CO2===Ca (HCO3) 2, Ca (HCO3) 2 + 2NaOH===CaCO3 + Na2CO3 +: 2H2O, so D is correct. Only B with B.Answer: BThreeKnown as "crystal town" reputation of Jiangsu Donghai County is rich in the crystal, existing in the National Geological Museum of the crystal king from Donghai County. The crystal is relatively pure quartz crystal transparent, main component is the SiO2. quartz quartz narrative is not correct ()A. quartz is not necessarily a transparent crystal, it can be used as an ornamentB. quartz can be used to make glass or cementC. quartz crystal has the highest hardness and can be made from emeryD. quartz can be used to make high-purity silicon and also to make optical fibersAnalysis: if quartz contains impurities, they are not transparent crystals, so they can not be used to make optical instruments. The hardness of quartz is not the highest, so C is not correctAnswer: C4. if the 4.2g silicon and sodium 9.2g are put into the right amount of water, the volume of hydrogen (standard condition) can be collectedA.22.4LB.11.2LC.5.6LD.2.8L2Na2H2O===2NaOHH2 hav'e 2mol 2mol 1mol。

Dynamical Collapse of Nonrotating Magnetic Molecular Cloud Cores Evolution Through Point-Ma

Dynamical Collapse of Nonrotating Magnetic Molecular Cloud Cores Evolution Through Point-Ma

arXiv:astro-ph/9804113v1 10 Apr 1998
–2– the post-PMF phase of the collapse, represents a significant step towards the resolution of the protostellar magnetic flux problem. Our calculations indicate that a 1 M⊙ protostar forms in ∼ 1.5 × 105 yr for typical cloud parameters. The mass accretion rate is time dependent, in part because of the C-shock that decelerates the infalling matter as it propagates outward: the accretion rate rises to ≃ 9.4 M⊙ Myr−1 early on and decreases to ≃ 5.6 M⊙ Myr−1 by the time a solar-mass protostar is formed. The infalling gas disk surrounding the protostar has a mass ∼ 10−2 M⊙ at radii r > ∼ 500 AU. A distinguishing prediction of our model is that the rapid ambipolar diffusion −1 after the formation of a protostar should give rise to large (> ∼ 1 km s ), and potentially measurable, ion–neutral drift speeds on scales r < ∼ 200 AU. The main features of our simulation, including the C-shock formation after PMF, are captured by a similarity solution that incorporates the effects of ambipolar diffusion (Contopoulos, Ciolek, & K¨ onigl 1997). Subject headings: accretion, accretion disks — diffusion — ISM: clouds — ISM: magnetic fields — MHD — stars: formation — stars: pre-main-sequence

How long does it take for the Kondo effect to develop

How long does it take for the Kondo effect to develop

a r X i v :c o n d -m a t /9903240v 1 [c o n d -m a t .m e s -h a l l ] 15 M a r 1999How long does it take for the Kondo effect to develop?Peter NordlanderDepartment of Physics and Rice Quantum Institute,Rice University,Houston,Texas 77251-1892Michael Pustilnik and Yigal MeirPhysics Department,Ben Gurion University,Beer Sheva,84105,IsraelNed S.WingreenNEC Research Institute,4Independence Way,Princeton,NJ 08540David ngrethDepartment of Physics and Astronomy,Rutgers University,Piscataway,NJ 08854-8019The time-development of the Kondo effect is theoretically investigated by studying a quantum dot suddenly shifted into the Kondo regime by a change of voltage on a nearby ing time-dependent versions of both the Anderson and Kondo Hamiltonians,it is shown that after a time t following the voltage shift,the form of the Kondo resonance matches the time-independent resonance at an effective temperature T eff=T /tanh(πT t/2).Relevance of the buildup of the Kondo resonance to the transport current through a quantum dot is demonstrated.PACS numbers:72.15.Qm,85.30.Vw,73.50.MxThe Kondo effect in quantum dots has been observed in several recent experiments [1].Beyond verifying the-oretical predictions [2,3],these experiments demonstrate that quantum dots can serve as an important new tool to study strongly correlated electron systems.Unlike magnetic impurities in metals,the physical parameters of the quantum dot can be varied continuously,which allows,for example,systematic experimental study of the crossover between the Kondo,the mixed-valence,and the non-Kondo regimes.Moreover,the quantum dot sys-tem opens the possibility of directly observing the time-dependent response of a Kondo system,as there is a well developed technology for applying time-dependent per-turbations to dots [4].Along these lines,several theoret-ical works have addressed the behavior of a Kondo impu-rity subject to ac driving [5].However,a clearer picture of the temporal development of many-body correlations is obtained if the impurity is subject to a sudden shift in energy.Specifically,by applying a step-like impulse to a nearby gate,the dot can be suddenly shifted into the Kondo regime,and the buildup of the correlated state observed in the transport current.In this Letter,we analyze the behavior of a quan-tum dot following a sudden shift into the Kondo regime.The time-dependent spectral function is evaluated within the non-crossing approximation (NCA)[3,6–8],as is the transport current in response to a pulse train.The latter provides an experimental window on the development of the Kondo resonance.Employing the Kondo Hamilto-nian,we show that a finite development time t is pertur-batively equivalent to an increase in the effective tem-perature.We treat a quantum dot coupled by tunnel barriers to two leads (inset to Fig.2).Only one spin-degenerate level on the dot is considered,which is a good approximation at low temperatures.A time-dependent voltage V g (t )is applied to a nearby gate,causing a proportionate shift in the energy of the level ǫdot (t ).If the Coulomb inter-action between electrons prevents double occupancy of the dot,the system is described by the U =∞Anderson Hamiltonian for a magnetic impurity,σǫdot (t )n σ+ kσǫkσn kσ+(V k c †kσc σ+H .c .) ,(1)with the constraint that the occupation of the dot cannot exceed one electron.Here c †σcreates an electron of spin σin the quantum dot,with n σthe corresponding number operator;c †kσcreates an electron in the leads,with k rep-resenting all quantum numbers other than spin,including the labels,left and right,for the leads.V k is the tunnel-ing matrix element through the appropriate barrier.The quantum dot is occupied by a single electron provided the level energy ǫdot lies at least a resonance width Γdot [9]below the chemical potential of the leads.At low temper-atures,the resulting free spin on the dot forms a singlet with a spin drawn from the electrons in the leads –this is the Kondo effect.The Kondo temperature,beneath which the strongly correlated state is established,is given by T K ≃D ′exp(−π|ǫdot |/Γdot ),where D ′is a high en-ergy cutoff[10].The signature of this correlated state is a peak at the Fermi energy in the spectral density of the dot electrons.This peak,in turn,dramatically enhances transport through the dot,allowing perfect transmission−6.0−4.0−2.00.0ε0.00.51.01.52.02.5ρd o t (ε,t )−0.10.00.1εt<0t=13.8t=27.6t=82.8t=193t=759FIG.1.Spectral density ρdot (ǫ,t )vs.energy ǫat various times following a step-function change in the level energy ǫdot (t )=−5+3θ(t ).The ordinates for positive times are successively offset by 0.5units.For t <0,ρdot (ǫ,t )is iden-tical to the equilibrium spectral density at ǫdot =−5while for the largest time shown it is indistinguishable on this scale from the equilibrium spectral density at ǫdot =−2.Through-out this work energies are given in units of Γdot ,and times in units of 1/Γdot ,with ¯h =1.Here T =0.0025.at zero temperature [2].We employ the non-crossing approximation (NCA)to analyze the spectral density and transport through the dot in the presence of a time-dependent level energy ǫdot (t ).The NCA is based on an exact transformation of the U =∞Anderson model in Eq.(1)into a slave-boson Hamiltonian [6].The latter is then solved self-consistently to second order in the tunneling matrix el-ements V k .The NCA approximation gives reliable re-sults for temperatures down to T <T K ,and its time-dependent formulation has been discussed at length in previous works [7,8].We define a time-dependent spec-tral density for the dot electrons as [11]ρdot (ǫ,t )≡Re∞dτ2ψα′,S =ββ′c †βσββ′t t’t t’t=0-t=0+t=0+t=0-FIG.3.Contributions of order J 2to the renormalized con-duction electron scattering vertex,from the Kondo Hamilto-nian in Eq.(3).Solid lines are conduction electron propaga-tors and dashed lines are pseudofermion propagators.Sum-mation over internal spins is implied.pseudofermion number is conserved by H K +λn c ,and wehave n c =0for t <0because of the large pseudofermion energy λ→∞,we obtain an abrupt turn on of the Kondo coupling at t =0and all later expectations are taken in the physical subspace n c =1.The analytical signature of the Kondo effect is the log-arithmic divergence of perturbation theory in the dimen-sionless coupling Jρ,where ρis the density of conduction electron states per spin direction at the Fermi level.In-deed,for T <T K perturbation theory in Jρfails,even for small Jρ.For T >T K ,temperature cuts offthe logarith-mic divergencesand perturbationtheoryis reliable [14].We find that a finite time t following a sudden switching on of the Kondo coupling also results in a convergent per-turbation theory.To demonstrate this,we focus on the simplest quantity that diverges in perturbation theory.Specifically,we calculate the scattering vertex γpp (t,t ′)to order J 2.Physically,this quantity represents the low-est order change in J due to multiple scattering from the Kondo impurity.Since abruptly turning on the Kondo coupling creates a nonequilibrium state of the system,we use Keldysh Green functions with p =±1for the out-ward/backward branches.In time,the Keldysh contour runs from −∞to ∞(p =+1)and then from ∞to −∞(p =−1).As shown in Fig.(3),there are two contri-butions at order J 2,one with the conduction electron line and the pseudofermion line parallel and one with the lines antiparallel.Evaluating the diagrams in Fig.(3),and keeping only logarithmically divergent contributions in addition to the bare vertex,we find γpp ′(t,t ′)=pδpp ′J2G pp 0(t −t ′)sgn (t −t ′).(4)(Note that in this order there is no logarithmic contri-bution that is off-diagonal in the Keldysh indices.)HereG pp 0(t −t ′)is the bare time-ordered (for p =+1)or anti-time-ordered (for p =−1)Green function for conduc-tion electrons at the site of the Kondo impurity.For|t −t ′|≫1/D (D is a high-energy cutoff)it takes the form [15]G pp 0(t −t ′)→−πρT2ρJ lnD2.(6)For T t ≫1this reduces to the usual equilibrium form,γ∝J 1+1T ,with the logarithmic divergence cut offonly by temperature.However,since in our case the Kondo coupling exists only for times t >0,the re-sult contains an additional cutoffdue to the finite time allowed for spin-flip scattering.Formally,the finite time t since the onset of the Kondo coupling can be absorbed into an increase in the effective temperature,T eff=T¯h Γdot ∂ǫ,(8)where f (ǫ)is the Fermi function,and ¯h is explicitly in-cluded for clarity.If a periodic gate voltage is applied tothe dot,formula (8)is still valid if G is replaced by the time-averaged conductance G ,and ρdot (ǫ)is replaced by the average of the time-dependent spectral density ρdot (ǫ,t ) .Consider a periodic signal consisting of an “on”pulse of duration τon which brings the dot into the Kondo regime followed by an “off”pulse which moves it back out of the Kondo regime.During each on pulse,ρdot (ǫF ,t )will build up to a maximum at time τon and then rapidly decrease back to a low value during the offpulse.The differential increase of conductance as the duration of the on100200300400τon [1/Γdot ]0.00.51.01.5d G i n t /d τo n [e 2/h ]T=0.04T=0.02T=0.01T=0.005T=0.0025ττon V (t)goffFIG.4.Solid curves:derivative of G int (in units of e 2/h )with respect to duration τon of “on”gate-voltage pulses,at various temperatures.G int is the conductance inte-grated over a full cycle of gate voltage.Dashed curve:−π dǫΓdot f ′(ǫ)ρdot (ǫ,t =τon )for T =0.0025.Inset:schematic periodic gate-voltage pulse train.The level energy is ǫdot =−2in the on state and ǫdot =−5in the offstate.The duration of the offperiod,τoffis long enough to allow transients from each on pulse to die out.pulse is increased will therefore reflect the magnitude of the spectral density near or at the Fermi energy at a timeτon following the shift into the Kondo regime.In Fig.(4),we have plotted the differential with respect to τon of the conductance,with a fixed off-pulse duration τoff.The conductance is integrated over the period,rather than time-averaged,to remove effects due to the changing du-ration of the period,i.e.G int =(τon +τoff) G .This measurable transport quantity provides a probe of the time-development of the Kondo resonance [18].In conclusion,we have analyzed the response of a quan-tum dot to a sudden shift of gate voltage which takes the dot into the regime of the Kondo effect.The buildup of many-body correlations between the dot and the leads follows an uncertainty principle:at time t the Kondo res-onance is cut offby an energy ∼1/t .Within perturba-tion theory in the Kondo coupling,we find that the finite time t plays the role of an increased effective tempera-ture T eff=T/tanh(πT t/2).To experimentally probe the buildup of the Kondo resonance,we propose applying a train of square gate-voltage pulses to the dot.The deriva-tive of current with respect to duration of the “on”pulse accurately reproduces the time-dependent amplitude of the Kondo resonance.The work was supported in part by NSF grants DMR 95-21444(Rice)and DMR 97-08499(Rutgers).Work at BGU was supported by the The Israel Science Founda-tion -Centers of Excellence Program.One of us (MP)acknowledges the support of a Kreitman Fellowship.D Γdot /4,where 2D is the effectivebandwidth.The calculations here used a parabolic band of total width 40Γdot .[11]A.-P.Jauho,N.S.Wingreen,and Y.Meir,Phys.Rev.B 50,5528(1994).[12]Our calculations are based on the approximation that the switching time,τs ,is exactly zero.In reality,τs is always a finite time.Our results are valid for finite τs as well,provided that t ≫τs .[13]J.R.Schrieffer and P.A.Wolff,Phys.Rev.149,491(1966).[14]A.A.Abrikosov,Physics 2,5(1965).[15]G.Yuval,and P.W.Anderson,Phys.Rev.B 1,1522(1970).[16]By evaluating the conduction electron self-energy to or-der J 3,we have directly confirmed the ∼1/t cutofffor the Kondo peak in the spectral density.[17]Y.Meir and N.S.Wingreen,Phys.Rev.Lett.68,2512(1992).[18]The difference between the dashed and solid curves at small τon reflects the finite decay -time of the Kondo res-onance after the pulse is switched off.。

magnetic force前缀 -回复

magnetic force前缀 -回复

magnetic force前缀-回复"Magnetic Force: A Fundamental Phenomenon in Nature"Introduction:The concept of magnetic force has intrigued scientists and researchers for centuries. From its discovery by ancient civilizations to its extensive applications in modern technology, magnetic force plays a crucial role in shaping our understanding of the natural world. In this article, we will delve into the fundamentals of magnetic force, exploring its origins, properties, and the various applications it has been harnessed for in different sectors.I. Understanding Magnetic Force:To understand magnetic force, we must start at the atomic level. Atoms, the building blocks of matter, consist of protons, neutrons, and electrons. Each electron possesses both a negative charge and a property called spin. It is this spin that gives an electron its inherent magnetic field. When electrons within an atom align their spins, they create a microscopic magnetic field. This alignment is crucial for understanding magnetic force.II. Magnetic Fields and Flux:The magnetic fields generated by electrons extend beyond the atom, creating a region called a magnetic field. These fields exist around permanent magnets, electromagnets, and even electrically charged particles. Magnetic field lines are imaginary lines that represent the direction and strength of the magnetic field. Flux, symbolized by the Greek letter Phi (Φ), represents the total number of magnetic field lines passing through a given area.III. Magnetic Force on Moving Charges:According to the Laws of Electromagnetism, moving charged particles experience a force when subjected to a magnetic field. Known as the Lorentz force, it can be calculated using the equation F = q(v ×B), where F represents the magnetic force, q is the charge of the particle, v is its velocity, and B is the magnetic field.IV. Magnetic Force on Current-Carrying Wires:Similar to moving charges, wires carrying an electric current also experience a magnetic force when placed in a magnetic field. This phenomenon, known as the motor effect, plays a key role in the operation of electric motors and generators. The magnitude of the force can be calculated using the equation F = BIL, where Frepresents the magnetic force, B is the magnetic field strength, I is the current, and L is the length of the wire.V. Applications of Magnetic Force:The applications of magnetic force are diverse and far-reaching across several industries.a. Magnetic Levitation:Magnetic force is harnessed in Maglev trains, where the magnetic repulsion between the track and the train eliminates friction, resulting in faster and more efficient transportation.b. Magnetic Resonance Imaging (MRI):Medical imaging relies on the principle that magnetic fields can affect atomic nuclei within the body. By subjecting patients to strong magnetic fields and radio waves, MRI scanners produce detailed images of internal structures without the need for invasive procedures.c. Electric Motors and Generators:Magnetic force is at the heart of electric motors, which convert electrical energy into mechanical energy. Similarly, generators usemagnetic force to convert mechanical energy into electrical energy.d. Magnetic Storage:Hard drives and magnetic tapes in data storage devices rely on the ability of magnetic fields to encode and retrieve vast amounts of information efficiently.e. Maglocks:Magnetic locks, or maglocks, are widely used in security systems, ensuring doors remain locked until released by an electromagnetic force when triggered by authorized personnel.VI. Conclusion:From its origins in the microscopic world of atoms to its widespread applications in technology and industry, magnetic force has proven to be a fundamental phenomenon in nature. Its understanding has revolutionized various sectors, enabling breakthroughs in transportation, medicine, energy generation, and information storage. As we continue to uncover its intricacies, magnetic force will likely play an even more significant role inshaping the future of science and technology.。

微纳米流动和核磁共振技术

微纳米流动和核磁共振技术

微纳米流动和核磁共振技术英文回答:Microfluidics and nuclear magnetic resonance (NMR) are two important technologies that have revolutionized various fields of science and engineering.Microfluidics refers to the study and manipulation of fluids at the microscale level, typically in channels or chambers with dimensions ranging from micrometers to millimeters. It allows precise control and manipulation of small volumes of fluids, enabling a wide range of applications such as chemical analysis, drug delivery systems, and lab-on-a-chip devices. Microfluidic devices are often fabricated using techniques such as soft lithography, which involve the use of elastomeric materials to create microchannels and chambers.NMR, on the other hand, is a powerful analytical technique that utilizes the magnetic properties of atomicnuclei to study the structure and dynamics of molecules. It is based on the principle of nuclear spin, which is the intrinsic angular momentum possessed by atomic nuclei. By subjecting a sample to a strong magnetic field and applying radiofrequency pulses, NMR can provide information about the chemical composition, molecular structure, and molecular interactions of the sample. NMR has diverse applications in fields such as chemistry, biochemistry, medicine, and materials science.Microfluidics and NMR can be combined to create powerful analytical tools for studying various biological and chemical systems. For example, microfluidic devices can be used to precisely control the flow of samples and reagents, while NMR can provide detailed information about the composition and structure of the samples. This combination has been used in the development ofmicrofluidic NMR systems, which allow rapid and sensitive analysis of small sample volumes. These systems have been applied in areas such as metabolomics, drug discovery, and environmental monitoring.中文回答:微纳米流体力学和核磁共振技术是两种重要的技术,已经在科学和工程的各个领域引起了革命性的变化。

Basic Properties of Magnetic Materials:磁性材料的基本性质

Basic Properties of Magnetic Materials:磁性材料的基本性质

Name(s)___________________ Basic Properties of Magnetic MaterialsEquipment NeededWasher and various metals, compass, two bar magnetsIntroductionWe will qualitatively study some of the basic properties of magnetic materials.Permanent magnets are materials that retain their magnetic properties for a long time. Materials which can be used to make permanent magnets are called hard magnetic materials. Some magnetic materials are naturally occurring. For example lodestone is composed of magnetite, an iron-bearing mineral and is a naturally occurring permanent magnet. Synthetic magnetic materials which are used to make permanent magnets are usually alnicos: iron alloys containing aluminum, nickel, and cobalt. Some permanent magnets are ferrites made of powdered iron oxide and barium/strontium carbonate ceramics. Permanent magnets generally are described as having north and south poles. When permanent magnets are brought near each other, like poles repel and opposite poles attract.Temporary magnets only act as magnets if they are in the presence of a magnetic field produced by a permanent magnet or an electric current. Magnetic materials from which temporary magnets are made are called soft magnetic materials. Any object that can be lifted or moved by a magnet is a temporary magnet. Objects such as these will eventually lose their magnetism once the permanent magnet is removed. Sometimes the object may retain weak magnetic properties.Non magnetic materials are materials that do not exhibit magnetic properties in the presence of a magnetic field. Pure aluminum is a metal that is non-magnetic. All non-metallic materials are also non-magnetic.Magnetic domains are clusters of aligned atoms in a material.In iron, for example, a magnetized atom will likely cause its neighbors to line up in the same direction, forming a larger field. This forms magnetic domains. The more aligned the domains are, the stronger the magnetic field.ExplorationTemporary magnetsMaterials which are always attracted to a magnet are known as temporary magnets.1. Bring a compass near a washer. Does the compass needle deflect? Does the washer seem to be a magnet?NOTE: If the washer seems to be magnetized, bang it or drop it several times and test it again. What happens?2. Now use a permanent magnet instead of the compass. Bring the metal washer near the North Pole of the magnet. What do you observe?3. Flip the washer over and bring it near the North Pole of the magnet. What do you observe?4. Does the washer always seem to be attracted to the magnet?Non magnetic materialsMaterials that do not exhibit magnetic properties are known as non-magnetic materials.5. Bring the North Pole of the compass near a brass ball. Does the compass needle deflect?6. Bring the South Pole of the compass near the brass ball. Does the compass needle deflect?7. Now use a permanent magnet instead of the compass. Bring the brass ball near the North Pole of the magnet. What do you observe?8. Based on these observations, does the brass ball appear to be a permanent magnet, a temporary magnet, or non magnetic? Explain.Classification of magnetic materials9. Classify the US nickel, the steel ball, the aluminum ball and one other metallic object of your choice as permanent magnets, temporary magnets, or non-magnets. List the observations you’ve made in order to arrive at this classification.Permanent magnets and two types of poles10. Take two permanent magnets. Bring the two North Pole sides together. What do you observe?11. Bring the two South Pole sides together. What do you observe?12. Bring a North Pole side towards the South Pole side. What do you observe?13. Bring the North Pole side of a magnet near a compass. How does the compass behave?14. Bring the South Pole near the compass. How does the compass behave?15. Explain how these observations demonstrate that the compass is a permanent magnet rather than just a piece of iron.Earth’s magnetic field16. Identify geographic North in the lab room. Which side of the compass needle points north? We define the pole of the compass that faces geographic north to be the “magnetic North” pole of the compass and the pole that faces geographic south to be the “magnetic South” pole of the compass. Given your observations about the behavior of the magnetic forces between like and opposite poles, indicate on the sketch below the magnetic North Pole of the Earth and magnetic South Pole of the Earth. Is the geographic North pole a magnetic North pole or a magnetic South pole? Explain.Paper clip fun!17. Use your permanent magnet and put one end of a paperclip on the magnet. Then try to hang as many additional paperclips as you can end-to-end from that first paperclip. How many were you able to attach?18. Use the concept of magnetic domains to explain why the paper clips stick to each other. Draw a diagram showing how the domains might look before and after the paper clips are attached to the magnet.19. Remove the paper clips from the magnet. Try to pick up other paperclips with the ones that were attached to the magnet. What happens? Explain.20. Try to demagnetize the paperclips by dropping or banging them. Do they pick up other paperclips after you do this? Can you re-magnetize them? Explain what is happening in the inside of the paperclips to cause them to demagnetize and re-magnetize.。

氧化铁的磁性

氧化铁的磁性

Magnetic and Magnetization Properties of Co-DopedFe2O3Thin FilmsAseya Akbar,Saira Riaz,Robina Ashraf,and Shahzad NaseemCentre of Excellence in Solid State Physics,University of the Punjab,Lahore54590,PakistanAmongst the various phases of iron oxide,hematite(Fe2O3)is the most stable form,which shows antiferromagnetic behavior with ferromagnetic canting at room temperature.Doping of different metal ions inα-Fe2O3will not only lead to its new technological and industrial applications but also enhance its performance in existing applications.In this paper,we report synthesis and characterization of cobalt(Co)-doped Fe2O3thinfilms with dopant concentration in the range of0%–10%.XRD peaks shift to slightly higher angles as compared with undoped thinfilms due to smaller ionic radii of cobalt(72pm)as compared with iron(74pm).Room temperature magnetic properties,studied using vibrating sample magnetometer,show increase in saturation magnetization with increase in dopant concentration up to8%.Further increase in dopant concentration to10%degrades magnetic properties,which might be because of the presence of more atoms at the grain boundaries.Index Terms—Ferromagnetic,hematite,sol-gel,thinfilms.I.I NTRODUCTIONM AGNETIC thinfilms,ferromagnetic and antiferromag-netic,have attracted considerable attention because of their unique properties that make them important for techno-logical and industrial applications.Possible use of magnetic thinfilms in magnetic sensors,spintronic and high density magnetic storage devices has resulted in a great deal of interest.This stimulated interest in magnetic and transport properties of multilayered thinfilms that stems from discovery of giant magnetoresistance(GMR)and tunneling magnetore-sistnace(TMR)for the advancements of spintronic materials and devices[1]–[4].Among the various materials of interest iron oxide,espe-cially hematite(α-Fe2O3)phase,is an important candidate. Hematite(α-Fe2O3),also known as ferric oxide,is blood red in color and is extremely stable at ambient conditions.It is often the end product of other iron oxide transformations. Hematite is a semiconductor material with optical band gap of2.2eV[5].α-Fe2O3has a corundum structure with hexagonal unit cell composed of six formula ttice parameters of hematite are a=5.034Å,c=13.75Å[6].This material can also be indexed in rhomobohedral system with two formula units per unit cell with a=5.427Å,α=55.3°.The structure ofα-Fe2O3has close-packed arrays of oxygen along the(001)plane with the iron cations in the octahedral and tetrahedral interstitial sites.Hematite(α-Fe2O3)is formed with a stoichiometric metal-to-oxygen ratio especially when it isfinely divided[4].However,at1400K,oxygen evapora-tion is substantial and hematite transforms into magnetite at 1550K[4]–[6].Hematite is weakly ferromagnetic at room temperature because of canted spins with a saturation magnetization of0.4Am2/kg[6].It undergoes a phase transition at Manuscript received December17,2013;revised February20,2014; accepted March4,2014.Date of current version August15,2014. Corresponding author:A.Akbar(e-mail:aseya22@).Color versions of one or more of thefigures in this paper are available online at .Digital Object Identifier10.1109/TMAG.2014.2311826260K(the Morin temperature T M)to antiferromagnetic state. Above the Neel temperature(∼956K),hematite is paramag-netic.Below960K,the Fe3+ions are anitferromagnetically aligned[6].In the basal plane,the spins are parallel to each other but antiparallel to the spins of the neighboring planes [6].The magnetic easy axis is along the c axis below260K and above260K the easy axis is within the basal plane. Therefore,below Neel temperature,an electron traveling in the basal plane will experience a ferromagnetically aligned situation[7]–[10].To enhance the room temperature magnetic properties of hematite,we here report synthesis and characterization of undoped and cobalt-doped Fe2O3thinfilms using sol-gel and spin coating method.Dopant concentration is varied in the range0%–10%.Structural and magnetic properties are correlated with variation in dopant concentration.II.E XPERIMENTAL D ETAILSA.MaterialsFeCl3·6H2O and Co(NO3)2·4H2O(Sigma–Aldrich,99.99% pure),were used without further purification.Ethanol and n-hexane(Sigma–Aldrich,99.99%pure)were used as solvents.B.Sol Synthesis and Film PreparationTwo different solutions were prepared prior to thefinal sol synthesis.FeCl3·6H2O was dissolved in deionized(DI) water and n-hexane was added to the solution that was stirred vigorously at room temperature.Another solution was prepared by dissolving NaOH in ethanol.Two distinguishable layers appeared after mixing of both the solutions.Finally mixed solution was heated on a hot plate at60°C for several hours to obtain single-layered clear sol.Sol was aged at room temperature for48h before thefilm deposition.For cobalt-doped iron oxide thinfilms,cobalt nitrate Co(NO3)2·4H2O was dissolved in DI water and added to the iron oxide sol with variation in cobalt concentration(2%,4%,6%,8%,and 10%).Undoped and Co-doped thinfilms were deposited onto copper(Cu)substrates.Cu wasfirstly etched by diluted0018-9464©2014IEEE.Personal use is permitted,but republication/redistribution requires IEEE permission.See /publications_standards/publications/rights/index.html for more information.Fig.1.XRD pattern of undoped and cobalt-doped Fe2O3thinfilms annealed at300°C.Inset:expanded2θ°view of42°–45°showing shift of peak positions to higher angles.HCl and then repeatedly rinsed with DI water.It was then ultrasonically agitated at room temperature for10min in acetone and isopropyl alcohol to remove the residual organic impurities.Sols were spin coated onto Cu substrates at3000r/min for 30s and then aged at room temperature for24h.Films were annealed at300°C in the presence of vacuum under500Oe applied magneticfield(MF)for60min.C.Characterization ToolsBruker D8Advance X-ray diffractometer(XRD)was used to study the phase and crystalline structure of undoped and cobalt-doped iron oxide thinfilms.X-ray diffractometer used copper target withλ=1.5406Å(Nifiltered).Lake Shore’s vibrating sample magnetometer(VSM)was used to study the room temperature magnetic properties.III.R ESULTS AND D ISCUSSIONFig.1shows XRD patterns for undoped and Co-doped Fe2O3thinfilms prepared using sol-gel method after MF annealing at300°C.Appearance of(110),(012),(202), and(024)planes(Fig.1)indicates the formation of hematite (α-Fe2O3)pure phase(JCPDS card no.87–1165)at a low temperature of300°C.Hematite(α-Fe2O3)phase persistedeven after doping of10%and peaks corresponding to cobalt oxide or metal cobalt were not observed.Crystallite size was calculated using(1)[11]and is plotted as a function of dopant concentration along with crystallinity in Fig.2t=kλB cosθ(1)where k is the shape factor taken as0.9,λis the wavelength, B is full width at half maximum(FWHM),andθis the diffraction angle.Crystallite size increased with increase in the doping con-centration up to4%(Fig.2).This low level of doping may result in the dopant atoms being dissolved in the lattice properly.However,beyond4%it is possible that some ofthe Fig.2.Crystallite size and crystallinity as a function of dopant concentration. dopant atoms go to the interstitial positions or sit on the grain boundaries;it is to be kept in mind that it is a polycrystalline film and as such there are a large number of grain boundaries. These atoms will destroy the crystalline structure and will also result into a decreased crystallite size[12],as shown in Fig.2. Further,stresses occur because of the difference in ionic radii of the host and dopant atoms,and this can also be another reason for the decrease in crystallite size[13].Shift in peak positions,to slightly higher angles,are observed with the increase in dopant concentrations up to10%. This shift of peak positions to higher angles is due to smaller ionic radii of cobalt(72pm)as compared with that of iron (74pm).The small ionic radius of cobalt leads to decrease in unit cell[Fig.3(b)]that causes decrease in d-spacing which according to Bragg’s law shifts the peak positions to higher angles[11].Previously,pure phase hematite thinfilms were prepared at relatively high temperatures.Lian et al.[14]prepared hematite thinfilms using sol-gel method at temperature of500°C. Kumar et al.[15],Glasscock et al.[16],and Souza et al.[17] also reported annealing at500°C to obtain hematite phase. Lattice parameters(a,c)and unit cell volume(V)were calculated using(2)and(3)[11]and are shown as a function of dopant concentration in Fig.3sin2θ=λ23a2h2+k2+hk+λ2l24c2(2) where(hkl)represent the miller indices,λis the wavelength (1.5406Å)V=0.866a2c.(3) X-ray density(ρ)[11]was calculated usingρ=1.66042 AV(4) where A is the sum of atomic weights of the atoms in the unit cell,ρis in g/cm3,and V is the volume of unit cell inÅ3. The porosity values were calculated usingPorosity(%)=1−ρexpρstd×100(5)AKBAR et al.:MAGNETIC AND MAGNETIZATION PROPERTIES OF Co-DOPED Fe 2O 3THIN FILMS2201204Fig.3.(a)Lattice parameters and (b)unit cell volume of Co-doped Fe 2O 3thinfilms.Fig.4.X-ray density and porosity as a function of dopant concentration.where ρexp is the calculated X-ray density and ρstd is the standard density taken from the JCPDS data.X-ray density and porosity of the films is shown as a function of dopant concentration in Fig. 4.Increase in X-ray density,with increased dopant concentration,indicates formation of compact structure with cobalt incorporation.Fig.5shows M –H curves for undoped and cobalt-doped Fe 2O 3thin films.It can be seen from Fig.5that even undoped iron oxide thin films show ferromagnetic behavior as opposed to antiferromagnetic nature of hematite.In the temperature range 260–950K (13°C–677°C),(111)planes arrange themselves to form layers of Fe 3+cations [6].Spins interact ferromagnetically within the same plane while antiferromagnetic coupling arises with the spins of the adjacent planes,that is,antiparallel arrangement of spins.Because of spin orbit coupling canting between two adjacent planes arises that produces uncompensated magnetic moment of Fe 3+cations which is the cause of ferromagnetic behavior[6].Fig.5.M–H curves for Co-doped Fe 2O 3thinfilms.Fig.6.Coercivity and saturation magnetization as a function of dopant concentration.The uncompensated magnetic moments seem to have appeared during sol’s synthesis [18]since in our case even undoped films show ferromagnetic behavior.Fig.6shows variation in saturation magnetization (M s )and coercivity (H c )as a function of varying dopant concentration.M s ,in Co-doped Fe 2O 3thin films,increases up to dopant concentration of 8%as shown in Fig.6.However,a sharp decrease in M s value was observed by further increasing dopant concentration to 10%,which might be because of the presence of more atoms at the grain boundaries as seen in the XRD results with a slight increase in crystallite size from 8%to 10%.Ziese and Thornton [19]reported that doping in iron oxide generated extra electrons in the host lattice.In nonmagnetic lattice,these electrons can propagate freely through the crystal.However,in a magnetic lattice localized spin order is present that hinders the motion of doped charge carries.According to Hund’s rule,strong exchange interaction exists among the d electrons [19].This strong exchange inter-action will force the electrons to take the direction of spin of localized electrons.As a result extra electrons with spinup will be available but cannot hop into the neighboring spin down site [19].In addition,if a canted structure with angle between two sublattices is present then the total energy can be estimated using [19]E (θ)=J S 2cos θ−6tx cosθ2(6)where E is energy of the system,J is exchange interaction,S is spin quantum number,θis angle between spins of the two sites,t is the hopping matrix,and x is the dopant concentration.2201204 IEEE TRANSACTIONS ON MAGNETICS,VOL.50,NO.8,AUGUST 2014TABLE IC OMPARISON OF S ATURATION M AGNETIZATIONOFC O -D OPED T HIN F ILMSThe energy will be minimized under the condition given incos θ2=32t J S 2x .(7)Equation (7)represents that by increasing x,spin structure becomes canted resulting in the presence of both ferromagnetic and antiferromagnetic ordering [19].Moreover,order will be purely ferromagnetic for a condition given inx >x c =23J S 2t(8)where x c is the critical concentration below which the mag-netic structure is undistorted.Cobalt with electronic configuration of [Ar]3d 74s 2has one more electron than iron ([Ar]3d 64s 2)with less energy of d state.Cobalt atom donates one d and two s electrons to oxygen that results in remaining six electrons on cobalt.When substituted for Fe with spin down electron,the spin down d band gets completely filled with remaining one d-electron residing in spinup band.This results in net magnetization of 1μB.Thus,canting of spin structure results because of the imbalance created by incorporation of cobalt in Fe 2O 3lattice,which in turn results in increased magnetization values in Co-doped Fe 2O 3thin films [20].Best magnetic properties are observed with dopant concentration of 4%–8%(Fig.5).With increase in dopant concentration above 8%,a large number of defects can result in inadequate alignment of spins.This leads to less prominent canting of spin structure resulting in a fewer number of uncompensated magnetic moments thus reducing the magnetic properties [21].In addition,at high dopant concentration (≥10%)the reduction in magnetic moment arises owing to the presence of adjacent cobalt ions with different oxidation states of 2+and 3+with antifer-romagnetic coupling in Fe 2O 3lattice [9].Comparison of saturation magnetization of Co-doped Fe 2O 3thin films with literature can be seen in Table I.IV.C ONCLUSIONSUndoped and cobalt-doped (2%–10%)hematite (α-Fe 2O 3)thin films have been prepared using sol-gel and spin coating method.The films were annealed at 300°C in the presence of a magnetic field of 500Oe.XRD results indicated the formation of phase pure hematite in undoped and doped thin films.Ferromagnetic behavior has been observed even in undoped Fe 2O 3thin films.Increase in saturation magneti-zation,∼2.1emu/cm 3,was observed in Co-doped iron oxidethin films up to a dopant concentration of 8%which is lost with further increase in the dopant concentration.R EFERENCES[1]S.Riaz,A.Akbar,and S.Naseem,“Structural,electrical and magneticproperties of iron oxide thin films,”Adv.Sci.Lett.,vol.19,no.3,pp.828–833,2013.[2]S.Riaz, A.Akbar,and S.Naseem,“Controlled nanostructuring ofmultiphase core-shell iron oxide nanoparticles,”IEEE Trans.Magn.,vol.50,no.1,p.2300204,Jan.2014.[3]S.Riaz,M.Bashir,and S.Naseem,“Iron oxide nanoparticles preparedby modified co-precipitation method,”IEEE Trans.Magn.,vol.50,no.1,p.4003304,Jan.2014.[4]J.Zhang,X.G.Zhang,and X.F.Han,“Spinel oxides: 1spin-filterbarrier for a class of magnetic tunnel junctions,”Appl.Phys.Lett.,vol.100,no.22,pp.222401-1–222401-4,May 2012.[5]M.Monti et al.,“Magnetism in nanometer-thick magnetite,”Phys.Rev.B ,vol.85,no.2,p.020404,Jan.2012.[6]R.N.Bhowmik and A.Saravanan,“Surface magnetism,Morin transi-tion,and magnetic dynamics in antiferromagnetic α-Fe 2O 3(hematite)nanograins,”J.Appl.Phys.,vol.107,no.5,p.053916,2010.[7] A.Yogi and D.Varshney,“Magnetic and structural properties of pureand Cr-doped haematite:α-Fe 2-xCr x O 3(0≤x ≤1),”J.Adv.Ceram.,vol.2,no.4,pp.360–369,2013.[8] A.K.Shwarsctein,Y .S.Hu, A.J.Forman,G. 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光伏行业英文词汇

光伏行业英文词汇

太阳电池solar cell通常是指将太阳光能直接转换成电能的一种器件。

硅太阳电池silicon solar cell硅太阳电池是以硅为基体材料的太阳电池。

单晶硅太阳电池single crystalline silicon solar cell单晶硅太阳电池是以单晶硅为基体材料的太阳电池。

非晶硅太阳电池(a—si太阳电池)amorphous silicon solar cell用非晶硅材料及其合金制造的太阳电池称为非晶硅太阳电池,亦称无定形硅太阳电池,简称a—si太阳电池。

多晶硅太阳电池polycrystalline silicon solar cell多晶硅太阳电池是以多晶硅为基体材料的太阳电池。

聚光太阳电池组件photovoltaic concentrator module系指组成聚光太阳电池,方阵的中间组合体,由聚光器、太阳电池、散热器、互连引线和壳体等组成。

电池温度cell temperature系指太阳电池中P-n结的温度。

太阳电池组件表面温度solar cell module surface temperature系指太阳电池组件背表面的温度。

大气质量(AM)Air Mass (AM)直射阳光光束透过大气层所通过的路程,以直射太阳光束从天顶到达海平面所通过的路程的倍数来表示。

太阳高度角solar太阳高度角solar elevation angle太阳光线与观测点处水平面的夹角,称为该观测点的太阳高度角。

辐照度irradiance系指照射到单位表面积上的辐射功率(W/m2)。

总辐照(总的太阳辐照)total irradiation (total insolation)在一段规定的时间内,(根据具体情况而定为每小时,每天、每周、每月、每年)照射到某个倾斜表面的单位面积上的太阳辐照。

直射辐照度direct irradiance照射到单位面积上的,来自太阳圆盘及其周围对照射点所张的圆锥半顶角为8o的天空辐射功率。

刺激脑部并测量脑电方法的文献

刺激脑部并测量脑电方法的文献

刺激脑部并测量脑电方法的文献英文回答:Transcranial magnetic stimulation (TMS) is a non-invasive technique that uses magnetic pulses to stimulate the brain. TMS has been shown to have a variety of effects on brain function, including improving motor function, reducing pain, and treating depression.TMS is typically performed using a coil that is placed over the head. The coil generates a magnetic field that penetrates the skull and stimulates the underlying brain tissue. The strength and duration of the magnetic pulsescan be adjusted to target specific areas of the brain.TMS is a safe and well-tolerated procedure. The most common side effects are mild headaches and scalp discomfort. TMS is contraindicated in people with metal implants intheir head, such as pacemakers or cochlear implants.Electroencephalography (EEG) is a non-invasive technique that measures the electrical activity of the brain. EEG is typically performed using a cap that is fitted with electrodes. The electrodes record theelectrical signals generated by the brain and send them to a computer.EEG can be used to diagnose a variety of brain disorders, including epilepsy, sleep disorders, and dementia. EEG can also be used to monitor brain function during surgery or other medical procedures.TMS and EEG are two valuable tools for studying and treating brain disorders. TMS can be used to stimulate the brain and improve function, while EEG can be used to measure brain activity and diagnose disorders.中文回答:经颅磁刺激(TMS)是一种使用磁脉冲来刺激大脑的无创技术。

《神经促进技术》课件

《神经促进技术》课件
2 Principles
These techniques work by either inhibiting or exciting neural circuits to restore or enhance normal brain function.
神经促进技术的分类
Invasive Techniques
Deep brain stimulation, cortical stimulation, and spinal cord stimulation.
Non-Invasive Techniques
Transcranial magnetic stimulation, transcranial current stimulation, and vagus nerve stimulation.
2
Neurological Disorders
These techniques have shown promise in treating various neurological disorders, including Parkinson's disease, epilepsy, and chronic migraines.
Spinal Cord Stimulation (SCS)
A technique that uses electrical pulses to inhibit pain signals from reaching the brain. It is commonly used for managing chronic pain conditions.
3
Mental Health
Neurostimulation is being explored as a potential treatment for mental health conditions such as depression, anxiety, and obsessive-compulsive disorder.

磁斯格明子在钉扎作用下的动力学研究进展

磁斯格明子在钉扎作用下的动力学研究进展

Vol. 1, No. 1 第1卷第1期Science and Engineering科学与工程December, 2022 2022年12月基金项目: 西交利物浦大学Key Programme Special Fund (Grant No. KSF-E-22); Research Enhancement Fund (Grant No. REF17-1-7).*通信作者: 于昊, Hao.Y ***********.cn收稿日期: 2022-09-28; 接受日期: 2022-10-24; 在线出版日期: 2023-01-05磁斯格明子在钉扎作用下的动力学 研究进展蒋韫希, 于昊*西交利物浦大学物理系, 江苏苏州 215123摘要: 磁斯格明子由于其具有拓扑保护、尺寸小、驱动电流低的优势,有望应用于下一代存储和计算器件,例如赛道存储、逻辑计算和神经计算器件。

室温下磁斯格明子的发现也为实现基于磁斯格明子的计算和存储器件奠定了基础。

缺陷和杂质等在真实材料中不可避免,这些天然的钉扎中心会对磁斯格明子的动力学,包括临界驱动电流、霍尔角度等产生重要影响。

关于薄膜中室温磁斯格明子的工作表明,钉扎的影响在室温下会非常大。

因此,研究不同温度下的钉扎效应和磁斯格明子-钉扎间的相互作用,对研究磁斯格明子在实际器件中的动力学和实现室温磁斯格明子自旋器件非常重要。

此外,利用这些作用也可人工引入钉扎中心以操控磁斯格明子的运动。

本文介绍了磁斯格明子的动力学模型,特别是在有限温环境、钉扎作用下的理论模型,以及数值模拟。

同时,简要综述了最近关于钉扎和磁斯格明子相互作用的一些研究工作;并展望了该领域的研究方向。

通过替换或增加原子、设置空缺、改变材料厚度或弯曲度、改变磁性参数等方式引入钉扎时,可使磁斯格明子运动时的霍尔角发生变化,也可将磁斯格明子固定在某一区域,或沿着特定轨道运动,克服室温下热扰动,有助于实现室温下磁斯格明子自旋器件。

(完整版)光伏行业英文词汇

(完整版)光伏行业英文词汇

光伏行业英文词汇Cell 电池Crystalline silicon 晶体硅Photovoltaic 光伏bulk properties 体特性at ambient temperature 在室温下wavelength 波长absorption coefficient 吸收系数electron-hole pairs 电子空穴对photon 光子density 密度defect 缺陷surface 表面electrode 电极p-type for hole extraction p型空穴型n-type for electron extraction n 型电子型majority carriers 多数载流子minority carriers 少数载流子surface recombination velocity (SRV)表面复合速率back surface field (BSF)背场at the heavily doped regions 重掺杂区saturation current density Jo 饱和电流密度thickness 厚度contact resistance 接触电阻concentration 浓度boron 硼Gettering techniques吸杂nonhomogeneous 非均匀的solubility 溶解度selective contacts 选择性接触insulator 绝缘体oxygen 氧气hydrogen 氢气Plasma enhanced chemical vapor deposition PECVDInterface 界面The limiting efficiency 极限效率reflection 反射light- trapping 光陷intrinsic material 本征材料bifacial cells 双面电池monocrystalline 单晶float zone material FZ-Si Czochralski silicon Cz-Si industrial cells 工业电池a high concentration of oxygen 高浓度氧Block or ribbon 块或硅带Crystal defects 晶体缺陷grain boundaries 晶界dislocation 位错solar cell fabrication 太阳能电池制造impurity 杂质P gettering effect 磷吸杂效果Spin-on 旋涂supersaturation 过饱和dead layer 死层electrically inactive phosphorus 非电活性磷interstitial 空隙the eutectic temperature 共融温度boron-doped substrate 掺硼基体passivated emitter and rear locally diffused cells PERL电池losses 损失the front surface 前表面metallization techniques 金属化技术metal grids 金属栅线laboratory cells 实验室电池the metal lines 金属线selective emitter 选择性发射极photolithographic 光刻gradient 斜度precipitate 沉淀物localized contacts 局部接触point contacts 点接触passivated emitter rear totally diffused PERTsolder 焊接bare silicon 裸硅片high refraction index 高折射系数reflectance 反射encapsulation 封装antireflection coating ARC减反射层an optically thin dielectric layer 光学薄电介层interference effects 干涉效应texturing 制绒alkaline solutions 碱溶液etch 刻蚀/腐蚀anisotropically 各向异性地plane 晶面pyramids 金字塔a few microns 几微米etching time and temperature 腐蚀时间和温度manufacturing process 制造工艺process flow 工艺流程high yield 高产量starting material 原材料solar grade 太阳级a pseudo-square shape 单晶型状saw damage removal 去除损伤层fracture 裂纹acid solutions 酸溶液immerse 沉浸tank 槽texturization 制绒microscopic pyramids 极小的金字塔size 尺寸大小hinder the formation of the contacts 阻碍电极的形成the concentration,the temperature and the agitation of the solution 溶液的浓度,温度和搅拌the duration of the bath 溶液维持时间alcohol 酒精improve 改进增加homogeneity 同质性wettability 润湿性phosphorus diffusion 磷扩散eliminate adsorbed metallic impurities 消除吸附的金属杂质quartz furnaces 石英炉quartz boats 石英舟quartz tube 石英炉管bubbling nitrogen through liquid POCL3 小氮belt furnaces 链式炉back contact cell 背电极电池reverse voltage 反向电压reverse current 反向电流amorphous glass of phospho-silicates 非晶玻璃diluted HF 稀释HF溶液junction isolation 结绝缘coin-stacked 堆放barrel-type reactors 桶状反应腔fluorine 氟fluorine compound 氟化物simultaneously 同时地high throughput 高产出ARC deposition 减反层沉积Titanium dioxide TiO2Refraction index 折射系数Encapsulated cell 封装电池Atmospheric pressure chemical vapor deposition APCVDSprayed from a nozzle 喷嘴喷雾Hydrolyze 水解Spin -on 旋涂Front contact print 正电极印刷The front metallization 前面金属化Low contact resistance to silicon 低接触电阻Low bulk resistivity 低体电阻率Low line width with high aspect ratio 低线宽高比Good mechanical adhesion 好机械粘贴solderability 可焊性screen printing 丝网印刷comblike pattern 梳妆图案finger 指条bus bars 主栅线viscous 粘的solvent 溶剂back contact print 背电极印刷both silver and aluminum 银铝form ohmic contact 形成欧姆接触warp 弯曲cofiring of metal contacts 电极共烧organic components of the paste 浆料有机成分burn off 烧掉sinter 烧结perforate 穿透testing and sorting 测试分选I-V curve I-V曲线Module 组件Inhomogeneous 不均匀的Gallium 镓Degradation 衰减A small segregation coefficient 小分凝系数Asymmetric 不对称的High resolution 高分辨率Base resistivity 基体电阻率The process flow 工艺流程Antireflection coating 减反射层Cross section of a solar cell 太阳能电池横截面Dissipation 损耗Light-generated current 光生电流Incident photons 入射光子The ideal short circuit flow 理想短路电路The depletion region 耗尽区Quantum efficiency 量子效率Blue response 蓝光效应Spectral response 光谱响应Light-generated carriers 光生载流子Forward bias 正向偏压Simulation 模拟Equilibrium 平衡Superposition 重合The fourth quadrant 第四象限The saturation current 饱和电流Io Fill factor 填充因子FF Graphically 用图象表示The maximum theoretical FF 理论上Empirically 经验主义的Normalized Voc 规范化VocThe ideality factor n-factor 理想因子Terrestrial solar cells 地球上的电池At a temperature of 25C 25度下Under AM1.5 conditions 在AM1.5环境下Efficiency is defined as ××定义为Fraction 分数Parasitic resistances 寄生电阻Series resistance 串联电阻Shunt resistance 并联电阻The circuit diagram 电路图Be sensitive to temperature 易受温度影响The band gap of a semiconductor 半导体能隙The intrinsic carrier concentration 本征载流子的浓度Reduce the optical losses 减少光损Deuterated silicon nitride 含重氢氮化硅Buried contact solar cells BCSC Porous silicon PS 多孔硅Electrochemical etching 电化学腐蚀Screen printed SP 丝网印刷A sheet resistance of 45-50 ohm/sq 45到50方块电阻The reverse saturation current density Job 反向饱和电流密度Destructive interference 相消干涉Surface textingInverted pyramid 倒金字塔Four point probe 四探针Saw damage etchAlkaline 碱的Cut groove 开槽Conduction band 导带Valence band 价带B and O simultaneously in silicon 硼氧共存Iodine/methanol solution 碘酒/甲醇溶液Rheology 流变学Spin-on dopants 旋涂掺杂Spray-on dopants 喷涂掺杂The metallic impurities 金属杂质One slot for two wafers 一个槽两片Throughput 产量A standard POCL3 diffusion 标准POCL3扩散Back-to-back diffusion 背靠背扩散Heterojunction with intrinsic thin -layer HIT电池Refine 提炼Dye sensitized solar cell 染料敏化太阳电池Organic thin film solar cell 有机薄膜电池Infra red 红外光Unltra violet 紫外光Parasitic resistance 寄生电阻Theoretical efficiency 理论效率Busbar 主栅线Kerf loss 锯齿损失Electric charge 电荷Covalent bonds 共价键The coefficient of thermal expansion (CTE) 热膨胀系数Bump 鼓泡Alignment 基准Fiducial mark 基准符号Squeegee 橡胶带Isotropic plasma texturing 各向等离子制绒Block-cast multicrystalline silicon 整铸多晶硅Parasitic junction removal 寄生结的去除Iodine ethanol 碘酒Deionised water 去离子水Viscosity 粘性Mesh screen 网孔Emulsion 乳胶Properties of light 光特性Electromagnetic radiation 电磁辐射The visible light 可见光The wavelength,denoted by R 用R 表示波长An inverse relationship between……and……given by the equation:相反关系,可用方程表示Spectral irradiance 分光照度……is shown in the figure below. Directly convert electricity into sunlight 直接将电转换成光Raise an electron to a higher energy state 电子升入更高能级External circuit 外电路Meta-stable 亚稳态Light-generated current 光生电流Sweep apart by the electric field Quantum efficiency 量子效率The fourth quadrant 第四象限The spectrum of the incident light 入射光谱The AM1.5 spectrumThe FF is defined as the ratio of ……to……Graphically 如图所示Screen-printed solar cells 丝网印刷电池Phosphorous diffusion 磷扩散A simple homongeneous diffusion 均匀扩散Blue response 蓝光相应Shallow emitter 浅结Commercial production 商业生产Surface texturing to reduce reflection 表面制绒Etch pyramids on the wafer surface with a chemical solutionCrystal orientationTitanium dioxide TiO2PasteInorganic 无机的Glass 玻璃料DopantCompositionParticle sizeDistributionEtch SiNxContact pathSintering aidAdhesion 黏合性Ag powderMorphology 形态CrystallinityGlass effect on Ag/Si interface Reference cellOrganicResin 树脂Carrier 载体Rheology 流变性Printability 印刷性Aspect ratio 高宽比Functional groupMolecular weightAdditives 添加剂Surfactant 表面活性剂Thixotropic agent 触变剂Plasticizer 可塑剂Solvent 溶剂Boiling pointVapor pressure蒸汽压Solubility 溶解性Surface tension 表面张力Solderability Viscosity 黏性Solids contentFineness of grind ,研磨细度Dried thicknessFired thicknessDrying profilePeak firing temp300 mesh screenEmulsion thickness 乳胶厚度StorageShelf life 保存期限Thinning 稀释Eliminate Al bead formation 消除铝珠Low bowingWet depositPattern design: 100um*74太阳电池solar cell单晶硅太阳电池single crystalline silicon solar cell多晶硅太阳电池so multi crystalline silicon solar cell非晶硅太阳电池amorphous silicon solar cell薄膜太能能电池Thin-film solar cell多结太阳电池multijunction solar cell 化合物半导体太阳电池compound semiconductor solar cell用化合物半导体材料制成的太阳电池带硅太阳电池silicon ribbon solar cell光电子photo-electron短路电流short-circuit current (Isc)开路电压open-circuit voltage (V oc)最大功率maximum power (Pm)最大功率点maximum power point最佳工作点电压optimum operating voltage (Vn)最佳工作点电流optimum operating current (In)填充因子fill factor(curve factor)曲线修正系数curve correction coefficient太阳电池温度solar cell temperature串联电阻series resistance并联电阻shunt resistance转换效率cell efficiency暗电流dark current暗特性曲线dark characteristic curve光谱响应spectral response(spectral sensitivity)太阳电池组件module(solar cell module)隔离二极管blocking diode旁路二极管bypass (shunt) diode组件的电池额定工作温度NOCT(nominal operating cell temperature)短路电流的温度系数temperature coefficients of Isc开路电压的温度系数temperature coefficients of V oc峰值功率的温度系数temperature coefficients of Pm组件效率Module efficiency峰瓦watts peak额定功率rated power额定电压rated voltage额定电流rated current太阳能光伏系统solar photovoltaic (PV) system并网太阳能光伏发电系统Grid-Connected PV system独立太阳能光伏发电系统Stand alone PV system太阳能控制器solar controller逆变器inverter孤岛效应islanding逆变器变换效率inverter efficiency方阵(太阳电池方阵) array (solar cell array)子方阵sub-array (solar cell sub-array)充电控制器charge controller直流/直流电压变换器DC/DC converter(inverter)直流/交流电压变换器DC/AC converter(inverter)电网grid太阳跟踪控制器sun-tracking ontroller 并网接口utility interface光伏系统有功功率active power of PV power station光伏系统无功功率reactive power of PV power station光伏系统功率因数power factor of PV power station公共连接点point of common coupling 接线盒junction box发电量power generation输出功率output power交流电Alternating current断路器Circuit breaker汇流箱Combiner box配电箱Distribution box电能表Supply meter变压器Transformer太阳能光伏建筑一体化Building-integrated PV (BIPV)辐射radiation太阳辐照度Solar radiation散射辐照(散射太阳辐照)量diffuse irradiation(diffuse insolation)直射辐照direct irradiation (direct insolation)总辐射度(太阳辐照度) global irradiance (solar global irradiance)辐射计radiometer方位角Azimuth angle倾斜角Tilt angle太阳常数solar constant大气质量(AM) air mass太阳高度角solar elevation angle标准太阳电池standard solar cell (reference solar cell)太阳模拟器solar simulator太阳电池的标准测试条件为:环境温度25±2℃,用标准测量的光源辐照度为1000W/m2 并且有标准的太阳光谱辐照度分布。

超能陆战队台词中英对照

超能陆战队台词中英对照

超能陆战队台词中英对照起来起来Get up! Get up!赢家诞生完胜对手The winner! By total annihilation.催命阎王Yama!谁是下一个谁还有胆量在赛场上一决雌雄Who's next? Where's the guts to stop me in the ring?挑战我的小阎王With little Yama!我能试试吗Can I try?我有个机器人是我自己造的I have a robot. I built it myself.算了吧小子这儿有规矩交钱才能入场Beat it kid! House Rules: You gotta pay to play.这些够了吗Oh, Is this enough?你叫什么小朋友What's your name, little boy?我叫小宏滨田宏Hiro, Hiro Hamada. 准备好你的机器人小虫Prepare your bot, Zero...两方对垒决一死战Two bots enter... One might leaves.准备好了吗Fighters ready?开战Fight!这是我第一次参赛能再试一次吗That was my first fight. Can I try again?没人喜欢输不起的人小朋友No one likes a sore loser little boy.回家吧Go home.我还有钱I've got more money...准备好了吗Fighters ready?开战Fight!磁力神Megabot!灭了他Destroy.- 再见了小阎王 - 什么- Not more "Little Yama". - But what?这怎么可能This is not possible!我也没想到也许是新手运气好吧Hey, I'm as surprised as you are. Beginner's luck.你还想再来一次吗Do you wanna go again?阎王Yama?#NAME?- No one hustles Yama! - Wooh! Hey!给他点颜色看看Teach him a lesson!伙计们有话好好说Hey fellas. Let's talk about this.- 小宏快上车 - 阿正- Hiro, get on! - Tadashi!来得真是时候Ooh! Good timing.#NAME?- Are you okay? - Yeah.#NAME? - Are you hurt? - No!那你在想什么笨蛋Then, what are you thinking, knuckle head!你十三岁从高中毕业就是为了干这个You graduated high school and you're 13 and this is what you're doing?抓紧了Hold on!机器人比赛是违法的你会被抓进监狱的Bot fighting is illegal. You're gonna get yourself arrested.机器人比赛不违法参与赌博才...才违法Bot fighting is not illegal. Betting on bot fighting..thats..that's illegal.但没人会注意到的我势头可猛了老哥But, so who could heed. I'm on a roll, big brother.谁也不能阻止我And there is no stopping me!哦不Oh, no.嗨卡斯阿姨Hi, Aunt Cass.你们还好吗快告诉我你们没事Are you guys okay? Tell me you're okay...#NAME?- We're fine. - We're okay.那就好Oh good.那你们两个小笨蛋在想什么Then what were you two knuckle heads thinking?!过去的十年我含辛茹苦把你们拉扯大For 10 years, I heed the best I could to raise you.我十全十美吗不Have I been perfect? No!我很会养小孩吗不Do I know anything about children? No!我该找本育儿手册来看吗也许吧Should I pick a book on parenting? Probably?我想说什么来着我本来想说... Where I was going with this? I had a point...#NAME?#NAME? 我也爱你I love you too!因为你们俩我不得不在节拍诗之夜早早收工I had to close up early because of you two fellons on beat poetry night.因为你们我都暴饮暴食了过来糯米Stress eating because of you! Come on, Moty!真的好好吃啊This is really good!你最好在卡斯阿姨吃光餐厅里的所有食物之前You'd better make this up to Aunt Cass,想办法补偿她before she eats everything in the cafe.那是自然For sure.我希望你能吸取教训小子And I hope you learn your lesson, bone head.我会的Absolutely.你还要去参加机器人比赛是吗You're going fight boting, aren'tyou?小镇那边还有一场比赛There's a fight across town.如果我现在预约还能赶得上If I book now, I could still make it.你什么时候做事前能用用你那聪明的大脑瓜啊When are you gonna start doing something with that big brain of yours?干吗像你一样去上大学What? Go to college like you?好让别人教我我早就知道的东西So people can tell me stuff I already know?你简直不可理喻Unbelievable.老妈老爸会怎么说啊Ahh! What would Mom and Dad say?我不知道他们已经过世了I don't know. They're gone.我三岁时他们就死了记得吗They died when I was 3, remember?#NAME?- I'll take you. - Really?我阻止不了你但我不会让你自己去I can't stop you from going, but I'm not gonna let you go on your own.太棒了Sweet!我们来你的呆子学校做什么What are we doing at your nerd school?机器人比赛在那边Bot fights that way!我去拿点东西Gotta grab something.要用很长时间吗Is this gonna take long?淡定我的大宝贝拿完东西就走Relax, you big baby, we will be in and out.你还没见过我的实验室呢Anyway, you've never seen my lab.太棒了终于见到你的呆子实验室了Oh great! I get to see your Nerd Lab.#NAME?- Heads up! - Wooh!电磁悬浮Electromag suspension?你是谁Who are you?神行御姐这是我弟弟小宏Gogo, this is my brother, Hiro.欢迎来到呆子实验室Welcome to the Nerd Lab.是啊Yeah...我从未见过应用在自行车上的电磁悬浮呢I've never seen Electromag suspension on a bike before.零阻力骑得更快Zero resistance, faster bike.但...还不够快But... Not fast enough.还不够Yet.别动站在线后面Ohh! Woohh! Do not move! Behind the line please.芥末无疆这是我弟弟小宏Hey, Wasabi. This is my brother, Hiro.你好啊小宏做好大吃一惊的准备Hello, Hiro. Prepare to be amazed.接好了Catch! #NAME?- Laser induced Plasma? - Oh, yeah.运用一点磁约束技术来达到...With a little magnetic confinement for ah..超精密程度Ultra precision.你怎么在这么多东西中找到自己要用的Wow, how did you find anything in this mess?我有个系统每样东西都放在各自的位置I have a system. There is a place for everything, and everything in its place.#NAME?- I need this! - You can't do that!你把这弄乱了社会需要秩序!This is anarchy! Society has rules!不好意思借过一下Excuse me! Coming through!阿正Tadashi!我的天哪你一定是小宏Oh my gosh, you must be Hiro!久仰大名啊I've heard so much about you!来得正好Perfect timing! Perfect timing!全是碳化钨That's a whole lot of Tungsten Carbide.足足四百磅400 pounds of it.过来你一定会喜欢这个的Come here! Come here! You're gonna love this.一点高氯酸A dash of per chloric acid.一点钴一点过氧化氢A smidge of cobalt, a hint Hydrogen Peroxide...加热至五百开尔文然后...super heated to 500 Kelvin, and...快看Tadah!很不错吧It's really great, huh?#NAME?- So pink. - Here's the best part.很神奇吧I know right!化学试剂对金属的脆化作用Chemical metal embrittlement!不赖嘛哈妮柠檬Not bad, Honey Lemon.哈妮柠檬神行御姐芥末无疆Honey Lemon? Gogo? Wasabi?我把芥末洒在了衬衣上就洒了一次I spilled wasabi on my shirt one time people. One time!外号都是弗莱德取的Fred is the one who comes up with the nicknames.谁是弗莱德Ah... Who's Fred?鄙人在此This guy right here!莫惊慌卡通服而已我真人可不长这样Ah! Ah! Don't be alarmed, it is just a suit. This is not my real face and body.我叫弗莱德The name is Fred.白天我是学校的吉祥物但到了晚上School mascot by day but by night,我还是学校的吉祥物I'm also a school mascot.话说你的专业是什么So, what's your major?不我不是这的学生不过我可是专业级科学控No! No! I'm not a student but I am a major science enthusiast..我最近一直在怂恿哈妮去开发一个I've been turning to get honey to develop a formula...能把我变成喷火蜥蜴的化学公式That can turn me into a fire breathing lizard at will.但她居然说这"不科学"But she says that's not "science".真心不科学It's really not.才怪那我让芥末无疆做的缩小激光呢Yeah, and I guess the shrink ray I ask Wasabi也不是科学吗for isn't science, either?#NAME?- Is it? - Nope!#NAME?- Well then, what about invinsible sandwich? - Hiro!你想啊你吃着三明治Imagine eating a sandwich but, 可周围的人都觉得你脑子有病everybody just thinks you're crazy.够了喂Just stop.#NAME?- Laser Eye? - What?#NAME?-Tingly fingers? - Never gonna happen!那开个杂货店总可以了吧Then what about grocery stores.- 那你在研究什么 - 我展示给你看- So, what are you been working on? - I'lll show you.胶带纸Duct Tape?别怪我泼冷水老哥这个人家发明过了I hate to break it to you, Bro. Already been invented.老哥痛痛痛Awww! Dude! Awww...这就是我研究的项目This is what I've been working on.你好我叫大白是你的私人健康助手Hello, I am Baymax. Your personalhealth care companion.我察觉到你需要医疗护理当你说I was alerted to the need for medical attention when you said:嗷的时候Awww...机器人护士?A robotic nurse?从一到十级你的疼痛指数是On a scale of 1 to 10, How would you rate your pain?你是说生理上的还是心理上的Physical, or emotional?正在扫描I will scan you now.扫描完成Scan complete.你的小臂有轻微的上皮组织擦伤You have a slight epidermal abrasion on your forearm我建议进行除菌喷雾处理I suggest an anti-bacterial spray.等等这个喷雾的主要成分是什么Whoa, whoa... What's in the spray specifically?喷雾的主要成分是"杆菌肽"The primary ingredient is: "Bacitracin."真糟糕我不巧对那个东西过敏That's a bummer, I'm actually allergic to that.你并不对杆菌肽过敏You're not allergic to Bacitracin.倒是对花生有轻微过敏You do have a mild allergy to: Peanuts.真不赖Not bad.你对这个机器人的编程还真不错嘞You've done some serious coding on this thing huh!啊哈他被编入超过一万种医疗护理程序Ahah! Programmed to over more than 10,000 medical procedures.大白之所以成为大白就是靠这个芯片This chip! Is what makes Baymax, "Baymax."乙烯树脂Vinyl?对为了做出无害又可爱的效果Yeah, going for a non-threatening huggable kind of thing.看上去像一个移动的棉花糖别见怪Looks like a walking marshmallow. No offense.我是机器人我不会见怪I am a robot. I can not be offended.超光谱镜头Hyperspectro Cameras?没错Yup.#NAME?- Titanium skeleton. - Carbon fiber.对哦更轻便Right. Even lighter.好赞的驱动器你从哪儿弄到的Killer actuators, where did you get those?就是在这里加工的在实验室里Machined them right here... In house..#NAME?#NAME?#NAME?- He can lift a thousand pounds. - Shut up!你是个乖宝宝来跟棒棒糖You have been a good boy, have a lollipop. 真棒Nice!直到你说 "我很满意你的照顾"I can not deactivate until you say:我才会结束工作You are satisfied with your care.那好吧我很满意你的照顾Well then, I'm satisfied with my care.他会帮助很多很多人的He's gonna help a lot of people.#NAME?- Hey, what kind of battery does it use? - Lithium lon.铝电解超级电容器充电速度更快You know, Super Capacitor would charge way faster.开夜车呢滨田先生Burning the midnight oil, Mr. Hamada?教授你好其实我已经在收尾了Hey, Professor, I actually was finishing up.你一定是小宏机器人拳击手对吗You must be Hiro. Bot fighter, right?在我女儿还小的时候她也一心想做这个When my daughter was younger, That's all she wanted to do.我能看看吗May I?当然Sure!嗯不错Hmm!磁力伺服器Magnetic Bearing Servos.超酷的吧想看看我怎么操纵它们吗Pretty sick huh? Wanna see how I put them together?嘿天才这就是教授本人发明的Hey, genius! He invented them!你是罗伯特·卡拉汉You are Robert Callaghan?是那个机器人学卡拉汉定理的卡拉汉吗Like as in, Callaghan.... Callaghan's Laws of Robotics?正是在下That's right.想过来这做研究吗你的年龄不是问题Ever think about applying here? Your age wouldn't be an issue. 他对他的机器人搏击事业可是很认真的I don't know, he's pretty serious about his career in bot fighting.#NAME?- Well, kind of serious. - I can see why.凭你的机器人打赢一定很容易With your bot winning must come easy.差不多吧Yeah, I guess.如果你喜欢做简单的事情Well, if you like things easy,那或许我们的项目不适合你then my program isn't for you.在这里我们不断地探索机器人的极限We push the boundaries of robotics here.我的学生们会创造未来My students go on to shape the future.很高兴认识你小宏祝你比赛顺利Nice to meet you, Hiro. Good luck with the bot fights.想赶上那场比赛的话你最好快点You gotta hurry if you wanna catch that bot fight.我必须到这里上学I have to go here!如果我不来这所极客大学我会发狂的If I don't go to this nerd school. I'm gonna lose my mind.我怎么才能被录取How do I get in?学校每年一次会举办学生科技展Every year, the school has a student showcase.你如果能做出一个让卡拉汉眼前一亮的东西You come up with something that blows Callaghan away,你就稳了You're in.不过你一定要做得漂亮But, it's gotta be great.相信我Trust me...这将会是It will be...什么也没有完全没想法Nothing! No ideas.空脑子笨脑子Useless empty brain. 才十四岁就一败涂地了washed up at 14.太悲哀So sad.什么都想不出来完了我永远也录取不上了I got nothing! I'm done! I'm never getting in!我还没对你放弃希望呢I'm not giving up on you.#NAME?- What are you doing? - Shake things up.用你的超大号大脑好好想一想Use that big brain of yours to think your way out.换一个角度看问题Look for a new angle.好多酷炫的科技设备你感觉怎么样Wow, a lot of sweet tech here today. How you feelin'?我以前可是机器人拳击手You're talking to an ex-bot fighter,这阵势想吓到我还远远不够It takes a lot more than this to rattle me.他紧张着呢Yup, he's nervous.小家伙没什么好担心的Oh! You have nothing to fear little fella.他好紧张He's so tense.- 没我才不紧张 - 放松点小宏- No! I'm not. - Relax, Hiro...你的设计棒极了快告诉他神行御姐Your tech is amazing! Tell him, Gogo...别叽歪了拿出点气概Stop whining, woman up.我好着呢I'm fine.你需要什么小家伙What you need, little man?除臭剂薄荷糖还是新内裤Deodorant breath mint, fresh pair of under pants?内裤你有病得治了Under pants? You need serious help.我这是有备而来Hey, I come prepared.我已经六个月没洗衣服了I haven't done laundry in 6 months. 一条内裤我能穿四天One pair last me four days.前穿穿后穿穿然后翻过来再来一遍I go front, I go back, I go inside out then I go front and back.#NAME?- Wow! That is both disgusting and awesome. - Don't encourage him.这叫做"循环再利用"It's called "recycling".下一位展示者滨田宏Next Presenter: Hiro Hamada.#NAME?- Oh yeah! This is it! - I guess I'm up.照相照相大家一起说 "小宏"Okay! Okay, photo! Photo! Everybody say: "Hiro!"小宏Hiro!我们爱你小宏祝你好运We love you, Hiro. Good luck!别搞砸了Don't mess it up.祝展示成功小家伙Break a leg, little man!科学万岁耶Science, yeah!上吧弟弟展示的机会来了Alright, Bro. This is it!拜托别让我失望了Come on, don't leave me hanging.怎么了?What's going on?我真的很想去你们学校I really wanna go here.你可以的You got this.大家好Hi...我的名字是滨...My name is Hiro...抱歉Sorry.我的名字是滨田宏My name is Hiro Hamada.我发明了一些自认为很神奇的东西And, I've been working on something that I think is pretty cool.希望你们能喜欢I hope you like it.这是一个微型机器人This, is a microbot.深呼吸Breathe.看起来微不足道It doesn't look like much.但是当它和其他小伙伴们团结起来的时候But when it links up with the rest of its pals...就变得有趣多了Things gonna get a little more interesting.它们由这个神经发射器控制The Microbots are controlled with this neurotransmitter.我想让它们做什么I think about what I want them to do...它们就照做They do it.这项创造的应用是无止境的The applications for this tech are limitless.建筑物Construction...曾经需要大队人马What use to take teams of people人工建造数月或数年working by hands for months or years.现在只要一个人就可以完成Can now be accomplished by one person.这仅仅是九牛一毛And that's just the beginning...可不可以用在How about...交通运输上?Transportation?微型机器人可以轻松移动任何物体至任何地方Microbots can move anything, anywhere, with ease.只有想不到If you can think it...没有做不到microbots can do it.你的思维局限是它唯一的限制The only limit is your imagination.微型机器人Microbots!那是我外甥That's my nephew!是我家人我爱我家人My Family! I love my family!棒呆了Nailed it!#NAME?- You did it! - You did it bad.- 做得好小宏 - 太让我震惊了老弟- Good job, Hiro. - It blows my mind, dude.观众爱死你了太神奇了They loved you. That was amazing!是的Yes.经过进一步开发你的技术将会是革命性的With some development, your tech could be revolutionary.你是阿拉斯泰尔·克雷Alastair Krei.我可以看看么?May I?太棒了Extraordinary.我希望你能把你的机器人卖给克雷科技I want your microbots at Krei Tech.不是吧Shut up.克雷先生说得对Mr. Krei is right.你的机器人将唤醒技术革新Your microbots are an inspired piece of tech.你可以继续开发它们You can continue to develop them...也可以把它们卖给一个唯利是图的小人Or you can sell them to a man whose only guided by his own self interest.罗伯特我知道你是怎么看我的Robert, I know how you feel about me但是这不关你的事But it shouldn't affect you...一切由你决定小宏This is your decision, Hiro.但至少你要知道克雷先生为达目的But you should know, Mr. Krei has cut corners喜欢走捷径忽视科学and ignored sound science to get where he is.不是那样的That's just not true. 克雷科技才不会善用你的机器人I wouldn't trust Krei Tech with your microbots其他东西也是or anything else小宏Hiro...我能给你提供超乎想象的酬劳I'm offering you more money than any fourteen year old could imagine.多谢你的赏识克雷先生但我不会卖I appreciate the offer, Mr. Krei. But they are not for sale.我真是高估了你的智商I thought you were smarter than that.罗伯特Robert.克雷先生Mr. Krei...那是我弟弟的机器人That's my brother's.哦对了Oh, that's right.我期望能在课堂上见到你I'm looking forward of seeing youin class...哇耶难以置信Wohoo! Yeah! Unbelievable!天才们让我们去喂饱这些饥渴难耐的大脑吧Alright geniuses! Let's feed those hungry brains.回餐厅晚饭我请客Back to cafe, dinner is on me!太棒了免费美食最棒了Yes, nothing is better than free food.#NAME?- Aunt Cass... - Unless it's moldy.- 我们会赶回去的好么 - 当然- We'll catch up, okay? - Sure.我为你感到骄傲I'm so proud of you!#NAME?- Both of you! - Thanks, Aunt Cass.我知道你要说什么I know what you gonna say.我应该感到自豪I should be proud of myself因为我的天赋终于能用于正途... because I'm finally using my gift for something important.. 不我只是想告诉你No! No, I was just gonna tell you,整个展示中你的裤裆都是开的your fly was down for the whole show.哈哈别搞笑Haha, Hilarious!什么啊What? Ahh!欢迎来到怪咖大学Welcome to Nerd School,怪咖Nerd!我Hey, I am...如果不是你我不会有今天所以I wouldn't be here if it wasn't for you, so...你知道You know...谢谢你没有放弃我Thanks for not giving up on me.你还好么Are you okay?我没事但是卡拉汉教授还在里面Yeah, I'm okay. But ProfessorCallaghan is still in there.阿正不要Tadashi, No!教授还在里面Callaghan's in there.我得去救他Someone has to help.阿正Tadashi!阿正Tadashi!嗨Hey...嗨卡斯阿姨Hey, Aunt Cass.松田夫人来餐厅了Mrs. Matsuda's in the cafe.穿的衣服一点都不适合她八十岁的年纪She's wearing something super inappropriate for an 80 year old.每次都能让我捧腹大笑It always cracks me up.你应该下楼看看You should come down.以后再说吧Maybe later.对了学校又打电话来了Oh, the university called again.开学已经有几周了It's been a few weeks since classes started,但他们说现在去报道还不晚but they said its not too late to register.知道了谢谢Okay, thanks.我会考虑的I'll think about it.嗨小宏Hi, Hiro!我们只是想看看你怎么样了We just wanted to check in and see how you're doing.我们希望你能来学校老弟We wish you were here, buddy.小宏如果现在让我选一种超能力Hiro, if I could have only one super power right now...我希望我能穿过这个摄像头给你一个大大的拥抱it would be the ability to crawl through this camera and give you a big hug.嗷Awww...你好我是大白你的私人健康助手Hello, I am Baymax, Your personal health care companion.你好Hey...大白我不知道你还能用Baymax, I didn't know you were still active.我听到一声惨叫发生了什么事?I heard a sound of distress. What seems to be the trouble?我刚刚砸到了脚趾头我很好Oh, I just had my toe a little. I'm fine.从一到十你的疼痛等级是多少?On a scale of 1 to 10, How would you rate your pain?零?Zero?我很好真的多谢你可以缩回去了I'm okay, really. Thanks. You can shrink now.#NAME?- Does it hurt when I touch it? - That's okay. No! No touching! 嗷!Aw!你摔倒了You have fallen.你说呢You think?从一...On a scale of one...从...On a scale...从...On a scale...从一到十...On a scale of one to ten...从一到十你的痛感是几级?On a scale of one to ten, How would you rate your pain?零Zero.#NAME?- It is alright to cry. - No! No...#NAME?- Crying is a natural response to pain. - I'm not crying.- 让我为你扫描看是否受伤 - 别扫我- I will scan you for injury. -Don't scan me.- 扫描完毕 - 不可理喻!- Scan complete. - Unbelieveable!你没有受到外伤You have sustained no injuries.但是你的荷尔蒙水平和神经递质However, your hormone and neurotransmitter levels都显示你有异常情绪波动indicate that you are experiencing mood swings.常见于青少年人群症状鉴定: Common on adolescenes. Diagnosis:青春期躁动Puberty.你说什么?Woah! What?好吧你该缩回去了Okay, time to shrink now.这一时期身体会出现毛发的增长You should expect an increase in body hair.尤其在脸部胸部腋窝和... Especially on your face, chest, armpits, and...谢谢你解释够多啦Thank you, that's enough. 身体还会感到莫名强烈的冲动You may also experience strange and powerful new urges.好啦咱乖乖回箱子里去好不Okay, let's go you back in your luggage.直到你说你满意我的照顾我才可以结束工作I can not deactivate until you say: You are satisfied with your care.好吧我很满意你的...Fine, I'm satisfied with my...我的微型机器人?My microbot?这是怎么回事?This doesn't make any sense.青春期的少年在成熟的过渡期常感到迷茫Puberty can often be a confusing time for young adolescent flowering into a manhood.不!No!微型机器人之间是互相感应的但... The thing is attracted with other microbot, but...这不可能啊它们不是都烧毁了That's impossible, they weredestroyed in a fire.肯定有地方坏了Something's broken.你的微型机器人好像要去哪Your tiny robot is trying to go somewhere.噢是吗那你帮忙找出它想去的地方吧Oh, yeah? Why don't you find out where he is trying to go?这样能缓解你青春期的情绪波动吗Would that stabilize your pubescent mood swings?当然Absolutely.大白?Baymax?大白?Baymax?大白?Baymax?不是吧What?小宏?Hiro?嗨卡斯阿姨Hi, Aunt Cass. #NAME?- Wow, you're up? - Yeah, I figured it was time.你是要去登记入学吗Are you registering for school?是啊我考虑过你说的了确实让我振作不少Ah, yes. I've thought about what you said. Really inspired me.亲爱的那太棒了!Oh, honey. That's so great!好嘞今晚加餐我会留些鸡翅... Okay, special dinner tonight. I leave up some chicken wings...放些辣得脸发麻的辣酱You know, with a hot sauce that makes us faces numb.好啊听起来不错Okay, sounds good.那好!再抱一个Great! Last hug.大白!Baymax!大白!Baymax!大白!Baymax!大白!Baymax!疯了么你这是要干嘛Are you crazy? What are you doing?我找到你的微型机器人要去的地方了...I have found where your tiny robot wants to go..都跟你说了它坏了! 它没有要去...I told you, its broken! It's not trying to go...锁住了Locked.那有窗户There is a window.请注意安全Please exercise caution.从这样的高度坠落可导致身体损伤A fall from this height could lead to bodily harm.糟了个糕Oh, no.抱歉请允许我放走些空气Excuse me, while I let out some air.好了吗Are you done? 好了Yes.我需要点时间重新充满It will take me a moment to re-inflate.好吧声音轻点就是了Fine, just keep it down.我的微型机器人?My microbots?有人在批量制造Someone's making more.小宏?Hiro?心脏病都快被你吓出来了You gave me a heart attack.我的手掌内置电击器My hands are equipped with defibrillators.- 预备! - 停!住手!- Clear! - Stop! Stop!我只是打个比方It's just an expression!糟了个糕Oh, no.快跑!Run!噢快点!Oh, come on!我跑不快I am not fast.是啊我看到了! Yeah, no kidding!快! 快! 速度!Go! Go! Come on!把门踢倒!Kick it down!出拳!Punch it!快! 快!Go! Go!跟上快! 快!Come on, go! go!快走!Move it!快点!Come on!快点! 从窗户出去! Come on! The window!挤过去!Suck in!大白!Baymax! 小宏?Hiro?快点!咱们赶紧离开这! 跑!速度! Come on! Let's get out of here! Go! Hurry!好了听我整理一下思路Alright, let me get this straight.一个头戴歌伎面具的男人A man in a kabuki mask带着一队会飞的小机器人袭击了你attacked you with an army of miniature flying robot.是微型机器人!Microbots!微型机器人Microbots.嗯他通过戴在头部的发射器Yeah, he was controlling them以心电感应的方式控制那些机器人telepathically with a neurocranial transmitter.也就是说这位面具先生So Mr. Kabuki was using用超能力袭击了你和气球人ESP to attack you and balloon man.你那会飞的机器人被盗后你有报案吗?Did you file a report when your flying robots was stolen?没有我以为它们都被烧毁了No, I thought they were all destroyed.听起来是有点不可思议不过当时大白也在告诉他Look, I know it sounds crazy but Baymax was there too. Tell him.是的长官他说的是事... 实Yes, officer. He is telling the tru...th.怎么... 你怎么了?What the... What's wrong with you?电量不足Low battery.嘿嘿尽量坚持到家..Whoa! Whoa, try to keep it ho..me我是您的私人健康助手大白...I am a health care, your personal Baymax...孩子我们还是打电话让你家长来一趟吧Kid, How about we call your parents and get them down here.什么?What? 在这张表上填上姓名电话然后我们再...Write your name and number down in this piece of paper, and we can...得赶紧带你回家充电I gotta get you home to your charging station.还能走吗?Can you walk?我将对你进行扫描扫描完毕I will scan you now. Scan complete.健康Health care.听好...Okay...要是阿姨问起来If my aunt asked,你就说我们一整天都待在学校知道吗we are at school all day, got it?我们从窗户跳下来We jump out of window.不是声音轻点! 嘘!No, But be quiet! Shhh!我们从窗户跳下来We jump out of window.你可不能这么回卡斯阿姨But you can't say things like that on our Aunt Cass.小宏?Hiro?你回来了亲爱的?You home, sweetie?是的!That's right!就知道我没听错嗨!I thought I heard you. Hi!嘿卡斯阿姨Hey, Aunt Cass.看看我的小大学生啊Oh, look at my little college man.我迫不及待地想听你在学校的一切Ah! I can't wait to hear all about it.马上就好咯Oh! It means its almost ready.你能安静会儿吗You be quiet?好了来大吃一顿吧Alright, get ready to have your face melted.明天就会感觉到这酸爽了你知道我在说什么吧We are gonna feel this things tomorrow. You know what I'm saying?好吧坐下来都告诉我Okay, sit down, tell me everything.情况是这样的因为我注册得太晚了The thing is, since I registered so late.我有很多功课要赶上I've got a lot of school stuff to catch up on.什么声音What was that?是糯米团Mochi.该死的猫Oh! That darn cat.就当饯行吃一盘好吗Oh! Just take a plate for the road, okay?#NAME?- Don't work too hard. - Thanks for understanding.毛茸茸的宝贝Hairy baby.毛茸茸的宝贝Hairy baby.好了起来吧Alright, come on.我会坚持下去我是你的私人助手I'll carry on, I'm your personal Baymax.一只脚前一只后One foot in front of the other.没道理啊This doesn't make any sense.阿正Tadashi.什么What?阿正Tadashi.阿正走了Tadashi's gone.他什么时候回来When will he return?他死了大白He is dead, Baymax.阿正身体十分健康Tadashi was in excellent health.饮食健康坚持锻炼他应该会长寿With a proper diet and exercise, He should have lived a long life.是他应该会Yeah, He should have. 但发生了一场火灾...But there is a fire...现在他去了Now he's gone.阿正就在这里Tadashi is here.不虽然大家都说只要有人记得他No, people keep saying he is not really gone.他就不是真的消失了As long as who remember him.但还是很痛...Still hurts..我没有检测出伤口I seen no evidence of physical injury.那是另外一种伤痛It's a different kind of hurt.你是我的病人我想帮助你You are my patient. I would like to help.这个你治不了You can't fix this one buddy.你在做什么Ah..What are you doing?我在下载伤心病治疗的数据库I am downloading a database on personal lost.数据库下载完成Database downloaded.治疗方法包括接触朋友爱人Treatments include: Contact with friends, and loved ones.#NAME?- I am contacting them now. - No! No, don't do that.#NAME?- Your friends have been contacted. - Unbelieveable!你现在在做什么Now what are you doing?其他治疗方法包括关怀和安抚Other treatments include: Compassion, and physical reassurance.我没事真的I'm okay, really.你会好的You will be alright.乖乖There, there.谢谢你大白Thanks, Baymax. 对于那场火灾我很遗憾I am sorry about the fire.别放心上这是意外It's okay, it was an accident.除非...Unless...除非它不是意外...Unless it wasn't a...蒙面的家伙偷走了我的微型机器人Ah! Ah! The showcase, the guy in the masked stole my microbots还纵火销毁痕迹and set the fire to cover his tracks.是他害死了阿正He's responsible for Tadashi.我们要抓住那家伙We gotta catch that guy.它还活着It's alive, It's alive, It's alive, It's alive!要想抓住那家伙就得给你升升级If we're gonna catch that guy, you need some upgrades.抓到蒙面人能改善你的情绪吗Will apprehending the man in the masked improve your emotional state?。

碳包覆的磁性纳米材料萃取酞酸酯

碳包覆的磁性纳米材料萃取酞酸酯

第32卷㊀第12期2013年㊀㊀12月环㊀境㊀化㊀学ENVIRONMENTALCHEMISTRYVol.32,No.12December2013㊀2013年3月27日收稿.㊀∗国家自然科学基金(21207059,21171085);山东省自然科学基金(ZR2010BM027,ZR2011BQ012)资助.㊀∗∗通讯联系人,Tel:13864593698;E⁃mail:lduzsx@126.comDOI:10.7524/j.issn.0254⁃6108.2013.12.003碳包覆的磁性纳米材料萃取酞酸酯∗王颖辉1㊀腾㊀飞2㊀张媛媛3㊀张升晓3∗∗㊀刘军深3㊀吴㊀茜3(1.烟台开发区城市管理环保局,烟台,264006;㊀2.上海通用东岳汽车有限公司,烟台,264006;3.鲁东大学,烟台,264025)摘㊀要㊀利用水热反应制备碳材料包覆的Fe3O4(Fe3O4/C)纳米颗粒,并将这种材料用作固相萃取吸附剂,从环境水样中富集酞酸酯类(PAEs)污染物.由于纳米材料大的比表面积和碳材料强的吸附能力,Fe3O4/C吸附剂拥有较高的萃取效率.从500mL的环境水样中定量萃取PAEs目标物,只需50mg的吸附剂.PAEs在Fe3O4/C表面的吸附可快速达到平衡,并且用少量的乙腈就能将分析物洗脱下来.在优化的固相萃取条件下,几种PAEs的检出限在17 58ng㊃L-1之间.通过水样的加标回收率来评价该方法,其加标回收率在94.6% 106.6%之间,相对标准偏差为2% 8%.关键词㊀酞酸酯,磁性固相萃取,碳材料.酞酸酯类化合物(PAEs)作为增塑剂用于塑料制品的生产,来提高塑料强度和增大可塑性.这类物质会从塑料制品中迁移转化进入环境,从而对环境造成污染.PAEs具有三致(致突㊁致畸㊁致癌)作用,属于环境内分泌干扰物,其中有6种化合物已被美国国家环保局列为 优先监控污染物 [1].目前测定水体PAEs的前处理方法主要有液液萃取[2]㊁固相萃取[3]㊁固相微萃取[4]等方法.李玫瑰等[5]以甲苯为萃取溶剂,采用微滴液相微萃取方法快速分析水溶性食品中的PAEs.王东新[6]以中空纤维膜液相微萃取方法从天然水体中萃取了4种PAEs,并结合气相色谱进行分析.胡庆兰[7]采用自制的固相微萃取涂层,通过顶空固相微萃取与气相色谱法联用测定水中的PAES.固相萃取法以有机溶剂消耗少㊁操作简便等优点被广泛采用.王鑫等[8]采用C18小柱萃取饮用水和自来水中的4种PAEs类污染物,并用气相色谱法测定.陈永山等[9]研究了流速和除水方式等条件对C18固相萃取柱富集PAEs回收率的影响,他们还用罗里硅土净化土壤提取液,测定了土壤中的11种PAEs类污染物[10].纳米材料拥有大的比表面积和短的扩散路径,使其具有很高的萃取效率和较快的吸附速度,近年来被开发研究用作固相萃取吸附剂,从环境或生物样品中富集污染物[11⁃12].然而纳米材料填充的固相萃取小柱具有很大的反压,样品通过小柱需要消耗大量的时间.因此,磁性纳米材料用作固相萃取吸附剂的研究应运而生[13⁃15],张小乐等[16]合成了C18基团修饰的磁性介孔硅胶材料,并利用该材料建立了磁性固相萃取⁃色谱分析方法,测定了环境水样中PAEs污染物的含量.我们以前的研究[17⁃19]表明,在基于磁性纳米颗粒的固相萃取方法中,可将经过修饰的磁性纳米材料分散到样品中进行目标物吸附,达到吸附平衡后,利用磁铁快速将吸附了目标物的磁性材料分离出来,然后将目标物进行洗脱㊁测定,该快速磁分离方法避免了传统固相萃取中耗时的过柱操作,能够节省大量时间.本文制备了一种新型的磁性纳米材料(Fe3O4/C),并以该纳米材料为固相萃取吸附剂从环境水样中富集PAEs污染物.优化了吸附剂用量㊁平衡时间㊁盐度㊁pH㊁解吸附等固相萃取条件,并将这种新型的固相萃取技术与高效液相色谱(HPLC)结合,开发了一种分析环境水体中PAEs的新方法.1㊀实验部分1.1㊀化学试剂和材料㊀㊀酞酸丙酯(DPP)㊁酞酸丁酯(DBP)㊁酞酸环己酯(DCP)和酞酸辛酯(DOP)标准样品从美国Acros2244㊀环㊀㊀境㊀㊀化㊀㊀学32卷Organics公司购得.十八烷基三乙氧基硅烷购买自日本东京化学试剂公司.FeCl3㊃4H2O和FeCl2㊃6H2O从北京化学试剂公司购买.葡萄糖购买自北京红星化学公司.色谱纯的甲醇和乙腈购自美国的ThermoFisher公司.实验用的纯水来自于美国Milli⁃Q纯水系统.1.2㊀Fe3O4和Fe3O4/C纳米材料的制备和表征采用化学共沉淀的方法制备Fe3O4磁性纳米材料.首先将2.0gFeCl2㊃4H2O和5.2gFeCl3㊃6H2O溶解到25mL的预先脱氧的去离子水,再加入0.85mL浓盐酸.将以上溶液逐滴加到250mL1.5mol㊃L-1的NaOH溶液,边加边机械搅拌并通氮气保护.反应完成后,生成的黑色Fe3O4纳米颗粒用200mL去离子水洗2次,再分散到110mL的去离子水中,悬浮液中Fe3O4纳米颗粒的浓度约为20mg㊃mL-1.采用水热法在纳米Fe3O4的表面包覆一层碳材料.将0.4gFe3O4用去离子水冲洗,直至溶液为中性,然后分散到80mL0.5mol㊃L-1的葡萄糖溶液中,将此混合物超声20min后转移到聚四氟乙烯内衬的反应釜中.将反应釜在180ħ加热4h,反应完成后,用磁铁将Fe3O4/C纳米材料分离,再用去离子水和乙醇冲洗几次除去杂质.最后将反应产物分散到70mL的去离子水中得到10mg㊃mL-1的Fe3O4/C.利用透射电镜(TEM,H⁃7500,Hitachi,Japan)观察制得的吸附材料的形貌和粒径,工作电压为80kV.材料的能谱图(EDS)采用S⁃3000N能谱仪(Hitachi,Japan)测定.材料的红外谱图采用KBr压片的方式在NEXUS670傅立叶变换红外光谱仪(NicoletThermo,U.S.)采集.1.3㊀固相萃取的程序将50mg的Fe3O4/C吸附剂分散到500mL水样中,搅拌20s使吸附剂在溶液中均匀分散.将1个Nd⁃Fe⁃B强力磁铁置于容器底部进行磁分离.经过大约10min,溶液变清澈,吸附剂被完全分离到容器底部,将上清液倒掉.在吸附剂中加入2mL乙腈,超声10s后置于磁铁上分离,洗脱液转移到离心管中,取20μL进HPLC系统测定.由于塑料制品可能会释放出PAEs,因此在实验过程中使用玻璃容器.1.4㊀HPLC分析利用美国安捷伦公司的高效液相色谱系统对PAEs进行分离和分析,迪马C18色谱柱(250ˑ4.6mm,粒径5μm),采用梯度淋洗的方法分离,50%的乙腈水溶液和纯乙腈分别为流动相A和B,流速为1mL㊃min-1.梯度淋洗程序如下:前15min内B保持在40%,在10min内B由40%升至100%,保持10min,随后在3min内回到初始状态.PAEs采用紫外检测器测定,波长设在226nm.2㊀结果与讨论2.1㊀吸附剂的表征图1为Fe3O4和Fe3O4/C的透射电镜图片.Fe3O4纳米颗粒为近似球形,粒径分布比较均匀,平均直径大约为10nm.Fe3O4/C纳米颗粒呈现出明显的核壳结构,内层颜色较深的为Fe3O4核,而外层颜色相对较浅的部分是碳层.Fe3O4核使得材料具有磁性,而碳包覆层赋予材料强的吸附能力.图1㊀Fe3O4(a)和Fe3O4/C(b)纳米材料的透射电镜图(放大倍数:200000)Fig.1㊀TEMimagesofFe3O4(a),andFe3O4/C(b)nanoparticle㊀12期王颖辉等:碳包覆的磁性纳米材料萃取酞酸酯2245㊀Fe3O4和Fe3O4/C的能谱图见图2.在Fe3O4纳米颗粒的能谱图中只有一个很小的碳峰,在其表面包覆一层碳材料后,Fe3O4/C的能谱图中出现了一个较大的碳峰,其表面碳元素的摩尔百分含量达到54 4%,而铁元素的摩尔百分含量降低到13.8%,说明碳材料被成功的包覆到了Fe3O4纳米颗粒表面.图2㊀Fe3O4(a)和Fe3O4/C(b)纳米材料的能谱图Fig.2㊀EDSspectraofFe3O4(a)andFe3O4/C(b)nanoparticle利用傅立叶变换红外光谱分析Fe3O4和Fe3O4/C材料的表面基团.由图3可见,Fe3O4和Fe3O4/C的红外谱图上都有1个580cm-1的吸收峰,为Fe3O4的特征吸收峰[20].在Fe3O4/C的谱图上1700cm-1和1616cm-1的峰是C O和C C的振动吸收峰[21],这表明在水热反应的过程中,葡萄糖碳化包覆到了纳米Fe3O4的表面.1000 1300cm-1的峰是C OH的伸缩振动峰和O H弯曲振动峰[22],3100 3700cm-1之间的宽峰是O H伸缩振动峰[23].Fe3O4/C纳米材料的表面上羟基和羧基基团的存在使得该材料具有表面亲水性,能够在水溶液中分散和稳定存在,并且材料的表面亲水性降低了分析物在其表面的不可逆吸附,能够在一定程度上克服碳材料用作固相萃取洗脱困难的缺点.2.2㊀萃取条件的优化2.2.1㊀吸附剂用量的选择为了获得最优的目标物回收率,在0 100mg的范围改变Fe3O4/C吸附材料的加入量进行萃取,其结果列于图4.随Fe3O4/C吸附剂加入量的增加,PAEs的回收率也逐渐增加,当吸附剂用量为40mg时,PAEs的回收率达到最大值,吸附剂的用量继续增加,回收率基本保持平衡,不会再有明显的增加.使用没有修饰的Fe3O4作为固相萃取的吸附剂,即使其用量达到100mg,对PAEs的回收率也不会超过10%.图3㊀Fe3O4和Fe3O4/C纳米材料的红外谱图Fig.3㊀IRspectraofFe3O4andFe3O4/Cnanoparticle图4㊀吸附剂用量对PAEs回收率的影响Fig.4㊀EffectoftheamountofFe3O4/CsorbentontheextractionefficiencyofPAEs㊀㊀结果表明,能够有效吸附PAEs的是Fe3O4/C材料表面的碳层.碳纳米管和有机化合物之间的吸附主要通过疏水作用,π⁃π键㊁氢键作用和静电作用[24],Fe3O4/C纳米颗粒表面也是碳材料,因此其相互2246㊀环㊀㊀境㊀㊀化㊀㊀学32卷作用机理相同.要达到满意的回收率只需要Fe3O4/C吸附剂40mg,可能是因为Fe3O4/C材料拥有大的比表面积和碳材料的强吸附能力.为保证分析物的完全吸附,在水样中加入50mg的Fe3O4/C纳米吸附剂.2.2.2㊀乙腈用量和平衡时间的选择选用乙腈从Fe3O4/C吸附剂上解吸PAEs.为了能够将PAEs充分解吸附,将Fe3O4/C吸附剂在洗脱液中超声20s再分离.由图5(a)可以看出,只需1mL乙腈就可将80%以上的目标物解吸下来,增加乙腈的用量,PAEs的回收率略有增加,但影响不大,本实验选用2mL乙腈作为洗脱剂.传统的碳材料用作固相萃取吸附剂时,常常面临洗脱困难的问题[25].而本研究中Fe3O4/C材料较易洗脱,一方面可能是因为包覆在纳米材料上的薄层碳使得分析物的扩散路径较短,便于洗脱,另一方面可能是因为包覆上的碳材料表面是亲水性,有效避免了分析物在其上发生不可逆吸附.Fe3O4/C是超顺磁性并且拥有大的饱和磁强度,但由于其在水溶液中分散良好且表面羧基使颗粒之间存在静电斥力,因此从纯水中用磁铁分离需要较长时间.为了帮助磁分离,在水溶液中加入2mL1mol㊃L-1的NaCl溶液提供补偿离子.用一个Nd⁃Fe⁃B强力磁铁能在10min将吸附剂完全吸附到容器的底部.通常要达到完全吸附目标物和吸附剂要有充分的接触时间.改变平衡时间考察目标物回收率的变化,由图5(b)可以看出,随着平衡时间由0到120min,PAEs的回收率没有明显变化,说明分析物能在很短的时间内完全吸附到Fe3O4/C材料上.这种快的吸附速率应归功于纳米材料短的扩散路径.磁性分离和快速的吸附,使这种新型固相萃取方法能够避免耗时的过柱操作,具有可操作性和实用性.图5㊀洗脱液乙腈用量(a)和平衡时间(b)对PAEs回收率的影响Fig.5㊀Effectofacetonitrilevolume(a)andstandingtime(b)ontherecoveryofPAEs2.2.3㊀盐度和pH的选择为了考察盐度对PAHs回收率的影响,在溶液中加入NaCl调整盐度.由图6(a)可以看出,在盐度为1 500mmol㊃L-1的范围内,目标物的回收率基本不受影响,表明Fe3O4/C能从高盐度水样中萃取目标物而不受影响.吸附剂表面电荷的类型和密度通常会随溶液pH的改变而变化,因此溶液的pH可能会影响一些分析物在Fe3O4/C纳米材料上的吸附.改变溶液的pH值在3 10范围内考察其对PAHs萃取回收率的影响.由图6(b)可以看出,在设定的pH范围内PAEs的回收率没有明显变化,说明Fe3O4/C纳米材料在此pH范围内比较稳定,不会被破坏,另一方面可能是因为PAEs在设定的条件以中性分子形式存在,材料表面电荷的改变对它们的吸附没有明显的影响.基于Fe3O4/C的磁性固相萃取方法无需严格控制溶液pH,用于环境水样品的分析更加便利和稳定.2.2.4㊀水样体积选择利用Fe3O4/C作吸附剂进行固相萃取,可以将材料分散在溶液中进行吸附,达到吸附平衡后用磁铁将吸附剂分离出来进行洗脱,该方法免去了耗时的过柱操作,因此非常适用于大体积环境水样的分析.如图7所示,利用50mgFe3O4/C吸附剂,当水样的体积由200mL增加到1000mL时,PAHs的回收率没有明显下降,说明Fe3O4/C吸附材料具有大的穿透体积.通过从1000mL水样中萃取目标物并将洗脱液浓缩到2mL,PAEs的富集系数可以达到500倍.㊀㊀12期王颖辉等:碳包覆的磁性纳米材料萃取酞酸酯2247图6㊀盐度(a)和溶液pH值(b)对PAEs回收率的影响Fig.6㊀Effectofsalinity(a)andsolutionpH(b)ontheextractionefficiencyofPAEs图7㊀水样体积对PAEs回收率的影响Fig.7㊀EffectofwatersamplevolumeontherecoveyofPAEs2.3㊀分析方法相关参数固相萃取程序结合HPLC⁃UV检测建立了标准曲线,其线性范围为0.1 20ng㊃mL-1.从500mL纯水样品中萃取目标物并用2mL溶剂洗脱,PAEs的富集系数为250倍.线性范围㊁线性相关系数和检出限等参数列于表1.由表1可以看出,该方法有较高的灵敏度㊁宽的线性范围和良好的精密度,PAEs的线性相关系数R2>0.999.DPP㊁DBP㊁DCP㊁DOP的检出限(信噪比为3)分别为35㊁58㊁17㊁33ng㊃L-1.表1㊀标准曲线的方法参数Table1㊀Analyticalparametersoftheproposedmethod分析物线性范围/(ng㊃mL-1)曲线方程线性相关系数(R2)方法检出限a/(ng㊃L-1)DPP0.1 20y=0.5578x+0.05610.999835DBP0.1 20y=0.5476x+0.06340.999758DCP0.1 20y=0.9865x-0.03270.999717DOP0.1 20y=0.5948x+0.10360.999933㊀㊀a检测限根据信噪比为3确定(S/N=3),x为分析物浓度,y为紫外信号强度.2.4㊀实际水样的测定实际水样选取实验室自来水和校园人工湖的湖水,采用所建立的磁性固相萃取方法测定水样中和加标后的水样中的PAEs,3次平行测定水样和加标水样结果平均值㊁加标水样的回收率平均值及标准偏差列于表2.自来水样中DPP浓度为0.104ng㊃mL-1,其他未检出;湖水中DPP和DBP浓度分别为0 215和0.132ng㊃mL-1,其余未检出.水样中低浓度的PAEs可能来自于塑料管路或者是塑料制品的释放.加标水样中PAEs的平均回收率在94.6% 106.6%之间,相对标准偏差为2% 8%.图8为湖水样品及其加标色谱图,其峰型良好,基质相对比较干净,没有太多杂峰的干扰.2248㊀环㊀㊀境㊀㊀化㊀㊀学32卷表2㊀实际水样中PAEs的浓度及其加标回收结果Table2㊀ConcentrationsofPAEsinrealwatersamplesandrecoveriesofsamplesspikedwithanalytes水样加标/(ng㊃mL-1)测定值a/(ng㊃mL-1)DPPDBPDCPDOP回收率ʃ相对标准偏差/%bDPPDBPDCPDOP0.000.104ndcndnd自来水0.50.6120.5040.5240.533101.6ʃ3101.0ʃ2104.8ʃ6106.6ʃ855.155.104.864.79100.9ʃ2102.0ʃ497.2ʃ495.8ʃ70.000.2150.132ndnd湖水0.50.7450.6530.5230.492106.0ʃ7104.2ʃ6104.6ʃ798.4ʃ454.954.964.734.8494.7ʃ696.6ʃ594.6ʃ796.8ʃ6㊀㊀注:a3次平行测定结果.b3次测定相对标准偏差.cnd未检出.图8㊀湖水样品中PAEs的色谱图.湖水样品(a),湖水加标0.5ng㊃mL-1(b)和5ng㊃mL-1(c)Fig.8㊀HPLC⁃UVchromatogramsoflakewater(a),anditsspikedsampleswith0.5ng㊃mL-1(b)and5ng㊃mL-1(c)ofeachanalyte3㊀结论制备了超顺磁性的Fe3O4/C吸附剂,并用其从大体积环境水样中富集痕量的PAEs污染物.与传统的和文献报道的固相萃取方法比较,该方法具有如下优点:(a)超顺磁性吸附剂可以直接分散到水样中吸附目标物,达到吸附平衡后用磁铁分离洗脱,磁分离方法避免了耗时的过柱操作.(b)Fe3O4/C具有纳米材料大的比表面积和碳材料强的吸附能力,因此从大体积水样中萃取目标物只需要少量吸附剂就能获得满意的结果.(c)目标物的回收率不受溶液盐度和pH值的影响,因此在萃取时不需要对水样进行繁琐的调整.(d)Fe3O4/C吸附剂的制备方法简单,所用试剂价格低廉,无毒.在进行萃取的过程中不会在环境水样中引入有毒有害的物质,环境友好.参㊀考㊀文㊀献[1]㊀王红芬,程晗煜,洪坚平.环境中酞酸酯的污染现状及防治措施[J].环境科学与管理,2010,35(7):33⁃36[2]㊀CaiYQ,CaiYE,ShiYL,etal.Aliquid⁃liquidextractiontechniqueforphthalateesterswithwater⁃solubleorganicsolventsbyaddinginorganicsalts[J].MicrochimicaActa,2007,157:73⁃79[3]㊀王超英,李碧芳,李攻科.固相微萃取/高效液相色谱联用分析水中邻苯二甲酸酯[J].分析测试学报,2005,24(5):35⁃38[4]㊀PeñalverA,PocurllE,BorrullF,etal.Determinationofphthalateestersinwatersamplesbysolid⁃phasemicroextractionandgaschromatographywithmassspectrometricdetection[J].JChromatogrA,2000,872:191⁃201[5]㊀李玫瑰,李元星,毛丽秋.微滴液相微萃取技术用于气相色谱⁃质谱法测定食品中的酞酸酯[J].色谱,2007,25(1):35⁃38[6]㊀王东新.中空纤维液相微萃取⁃气相色谱测定不同天然水体中的酞酸酯类化合物[J].南京师范大学学报(工程技术版),2008,8(3):43⁃46[7]㊀胡庆兰.自制固相微萃取涂层同时测定水中的多环芳烃和酞酸酯[J].吉林大学学报(理学版),2013,51(2):317⁃320[8]㊀王鑫,许小苗,俞晔,等.固相萃取⁃气相色谱法同时测定水中的酞酸酯类环境激素[J].食品工业科技,2008,29(4):287⁃289[9]㊀陈永山,骆永明,章海波,等.固相萃取法处理环境水样中酞酸酯:流速与除水方式的影响[J].环境化学,2010,29(5):954⁃959[10]㊀黄玉娟,陈永山,骆永明,等.气相色谱⁃质谱联用内标法测定土壤中11种酞酸酯[J].环境化学,2013,32(4):658⁃665㊀㊀12期王颖辉等:碳包覆的磁性纳米材料萃取酞酸酯2249[11]㊀CaiYQ,JiangGB,LiuJF,etal.Multiwalledcarbonnanotubesasasolid⁃phaseextractionadsorbentforthedeterminationofbisphenolA,4⁃n⁃Nonylphenol,and4⁃tert⁃Octylphenol[J].AnalChem,2003,75:2517⁃2521[12]㊀WangHY,CampigliaAD.Determinationofpolycyclicaromatichydrocarbonsindrinkingwatersamplesbysolid⁃phasenanoextractionandhigh⁃performanceliquidchromatography[J].AnalChem,2008,80:8202⁃8209[13]㊀ZhaoXL,ShiYL,CaiYQ,etal.Cetyltrimethylammoniumbromide⁃coatedmagneticnanoparticlesforthepreconcentrationofphenoliccompoundsfromenvironmentalwatersamples[J].EnvironSciTechnol,2008,42:1201⁃1206[14]㊀ZhaoXL,ShiYL,WangT,etal.Preparationofsilica⁃magnetitenanoparticlemixedhemimicellesorbentsforextractionofseveraltypicalphenoliccompoundsfromenvironmentalwatersamples[J].JChromatogrA,2008,1188:140⁃147[15]㊀LiJD,ZhaoXL,ShiYL,etal.Mixedhemimicellessolid⁃phaseextractionbasedoncetyltrimethylammoniumbromide⁃coatednano⁃magnetsFe3O4forthedeterminationofchlorophenolsinenvironmentalwatersamplescoupledwithliquidchromatography/spectrophotometrydetection[J].JChromatogrA,2008,1180:24⁃31[16]㊀张小乐,王巍杰,张一江,等.磁性介孔硅胶萃取剂的制备及萃取性能研究[J].环境化学,2012,31(4):422⁃428[17]㊀ZhangSX,NiuHY,CaiYQ,etal.BariumalginatecagedFe3O4@C18magneticnanoparticlesforthepre⁃concentrationofpolycyclicaromatichydrocarbonsandphthalateestersfromenvironmentalwatersamples[J].AnalChimActa,2010,665:167⁃175[18]㊀ZhangSX,NiuHY,HuZJ,etal.PreparationofcarboncoatedFe3O4nanoparticlesandtheirapplicationforsolid⁃phaseextractionofpolycyclicaromatichydrocarbonsfromenvironmentalwatersamples[J].JChromatogrA,2010,1217:4757⁃4764[19]㊀ZhangSX,NiuHY,ZhangYY,etal.Biocompatiblephosphatidylcholinebilayercoatedonmagneticnanoparticlesandtheirapplicationintheextractionofseveralpolycyclicaromatichydrocarbonsfromenvironmentalwaterandmilksamples[J].JChromatogrA,2012,1238:38⁃45[20]㊀BruceIJ,SenT,Surfacemodificationofmagneticnanoparticleswithalkoxysilanesandtheirapplicationinmagneticbioseparations[J].Langmuir,2005,21:7029⁃7035[21]㊀LiY,LengTH,LinHQ,etal.PreparationofFe3O4@ZrO2core⁃shellmicrospheresasaffinityprobesforselectiveenrichmentanddirectdeterminationofphosphopeptidesusingmatrix⁃assistedlaserdesorptionionizationmassspectrometry[J].JProteomeRes,2007,6:4498⁃4510[22]㊀LiY,XuXQ,QiDW,etal.NovelFe3O4@TiO2core⁃shellmicrospheresforselectiveenrichmentofphosphopeptidesinphosphoproteomeanalysis[J].JProteomeRes,2008,7:2526⁃2538[23]㊀LimSF,ZhengYM,ZouSW,etal.CharacterizationofcopperadsorptionontoanalginateencapsulatedmagneticsorbentbyacombinedFT⁃IR,XPS,andmathematicalmodelingstudy[J].EnvironSciTechnol,2008,42:2551⁃2556[24]㊀PanB,XingBS.Adsorptionmechanismsoforganicchemicalsoncarbonnanotubes[J].EnvironSciTechnol,2008.42(24):9005⁃9013[25]㊀HennionMC.Graphitizedcarbonsforsolid⁃phaseextraction[J].JChromatogrA,2000,885:73⁃95Carboncoatedmagneticnanoparticleforsolid⁃phaseextractionofphthalateestersfromwatersamplesWANGYinghui1㊀㊀TENGFei2㊀㊀ZHANGYuanyuan3㊀㊀ZHANGShengxiao3∗㊀㊀LIUJunshen3㊀㊀WUQian3(1.CityManagementBureauofEnvironmentalProtectionofYantaiDevelopmentZone,Yantai,264006,China;2.ShanghaiGeneralMotor(Dongyue)AutoCompany,Yantai,264006,China;㊀3.LudongUniversity,Yantai,264025,China)ABSTRACTCarboncoatedFe3O4nanoparticles(Fe3O4/C)weresynthesizedbyasimplehydrothermalreactionandappliedassolid⁃phaseextraction(SPE)sorbentstoextracttracephthalateesters(PAEs)fromenvironmentalwatersamples.TheFe3O4/Csorbentspossesshighextractionefficiencyduetostrongadsorptionabilityofcarbonmaterialsandlargespecificsurfaceareaofthenanoparticles.Only50mgofsorbentswereneededtoextractPAEsfrom500mLwatersamples.Theadsorptionreachedequilibriumrapidlyandtheanalyteswereelutedwithacetonitrilereadily.SalinityandsolutionpHhadnoobviouseffectontherecoveyofPAHs,whichavoidsfussyadjustmenttowatersamplebeforeextraction.Underoptimizedconditions,thedetectionlimitofPAEswasintherangeof17 58ng㊃L-1.Theaccuracyofthemethodwasevaluatedbytherecoveriesofspikedsamples.Goodrecoveries(94.6% 106.6%)withlowrelativestandarddeviationsfrom2%to8%wereachieved.ThisnewSPEmethodprovidesseveraladvantages,suchashighextractionefficiency,highbreakthroughvolume,convenientextractionprocedure,andshortanalysistime.Keywords:PAEs,magneticsolid⁃phaseextraction,carbonmaterials.。

非富勒烯有机太阳能电池研究进展从器件物理到磁场效应

非富勒烯有机太阳能电池研究进展从器件物理到磁场效应

第41卷第12期2020年12月发光学报CHINESE JOURNAL OF LUMINESCENCEVol.41No.12Dec.,2020文章编号:1000-7032(2020)12-1598-16非富勒烯有机太阳能电池研究进展:从器件物理到磁场效应张彩霞,张湘鹏,张家豪,王恺*(北京交通大学理学院,光电子技术研究所,发光与光信息教育部重点实验室,北京100044)摘要:非富勒烯受体(NFA)材料是现阶段非常受欢迎的有机光电材料之一。

基于非富勒烯受体的有机体异质结(BHJ)太阳能电池发展迅速,其单结能量转换效率(PCE)现已达到18%。

有机半导体中单线态与三线态在磁场作用下的相互转换会影响其电子-空穴的解离与复合,从而对光伏性能有一定的影响。

此外,三线态激子寿命和扩散距离较长,三线态-电荷反应的几率较大,增加光电流,使得三线态材料对于光伏性能的提高具有一定的作用。

因此,本文主要从以下几个方面对非富勒烯有机太阳能电池进行叙述,首先讨论了有机太阳能电池中电荷分离、重组及能量损失对开路电压的影响;其次总结了有机太阳能电池磁场下自旋依赖的光物理过程及三线态材料在有机太阳能电池中的应用,了解二者对提高光伏性能的影响;最后对有机光伏性能的进一步提高以及有机半导体磁场下的自旋问题进行了展望。

关键词:非富勒烯有机太阳能电池;电荷分离与重组;能量损失;磁场效应;三线态受体材料中图分类号:TM914.4文献标识码:A DOI:10.37188/CJL.20200314Advances in Non-fullerene Organic Solar Cells:from Device Physics to Magnetic Field EffectsZHANG Cai-xia,ZHANG Xiang-peng,ZHANG Jia-hao,WANG Kai*(Key Laboratory qf厶uminescence and Optical Information,Ministry qf Education,Institute of Optoelectronic Technology,School of Science,Beijing Jiaotong University,Beijing100044,China)*Corresponding Author,E-mail:kaiwang@Abstract:Non-fullerene acceptor materials are one of the most popular organic optoelectronic mate­rials at present anic bulk heterojunction(BHJ)solar cells based on non-fullerene accep-tors(NFAs)have been developing rapidly,and their single-junction power conversion efficiencies (PCE)have reached18%.The mutual conversion between singlets and triplets in organic semicon­ductors under the magnetic field will affect the dissociation and recombination for electrons and holes,thereby will have a certain impact on the photovoltaic performance.Moreover,the triplet excitons have a longer lifetime and diffusion distance,as well as higher probabilities for the triplet­charge reaction,which gives rise to the photocurrent,so that the triplet material has a certain effect on the improvement of photovoltaic performance.Thus,this article mainly discusses non-fullerene organic solar cells from the following aspects.Firstly,to discuss the effect of charge separation, recombination and energy loss on the open-circuit voltage;secondly,to talk about the spin-depend­ent photophysical process for the organic solar cells under the magnetic field and the application of the triplet materials in organic solar cells,both of which influence the improvement of photovoltaic 收稿日期:2020-10-20;修订日期:2020-11-02基金项目:国家自然科学基金(61634001,L1601651,11942413);科技部国家重点研发计划国际间合作项目(2019YFE0108400)资助Supported by National Natural Science Foundation of China(61634001,U1601651,11942413);Intergovernmental CooperationProject,National Key Research and Development Program,Ministry of Science and Technology,China(2019YFE0108400)第12期张彩霞,等:非富勒烯有机太阳能电池研究进展:从器件物理到磁场效应1599performance;finally,a prospective for further improvements of the organic photovoltaic performance and the spin problem under the organic semiconductor magnetic field will be given.Keywords:non-fullerene organic solar cells;charge separation and recombination;energy losses;magnetic field effects;triplet acceptor materials1引言非富勒烯受体(Nonfullerene acceptors,NFAs)分子具有合成相对简单、易于纯化、带隙可调节等优点,成为非常有潜力的有机光电材料之一,在半透明[1]、柔性[2-3]有机太阳能电池(Organic solar cells,OSCs)方面具有重要的研究意义和应用前景。

(完整版)光伏行业英文词汇

(完整版)光伏行业英文词汇

光伏行业英文词汇Cell 电池Crystalline silicon 晶体硅Photovoltaic 光伏bulk properties 体特性at ambient temperature 在室温下wavelength 波长absorption coefficient 吸收系数electron-hole pairs 电子空穴对photon 光子density 密度defect 缺陷surface 表面electrode 电极p-type for hole extraction p型空穴型n-type for electron extraction n 型电子型majority carriers 多数载流子minority carriers 少数载流子surface recombination velocity (SRV)表面复合速率back surface field (BSF)背场at the heavily doped regions 重掺杂区saturation current density Jo 饱和电流密度thickness 厚度contact resistance 接触电阻concentration 浓度boron 硼Gettering techniques吸杂nonhomogeneous 非均匀的solubility 溶解度selective contacts 选择性接触insulator 绝缘体oxygen 氧气hydrogen 氢气Plasma enhanced chemical vapor deposition PECVDInterface 界面The limiting efficiency 极限效率reflection 反射light- trapping 光陷intrinsic material 本征材料bifacial cells 双面电池monocrystalline 单晶float zone material FZ-Si Czochralski silicon Cz-Si industrial cells 工业电池a high concentration of oxygen 高浓度氧Block or ribbon 块或硅带Crystal defects 晶体缺陷grain boundaries 晶界dislocation 位错solar cell fabrication 太阳能电池制造impurity 杂质P gettering effect 磷吸杂效果Spin-on 旋涂supersaturation 过饱和dead layer 死层electrically inactive phosphorus 非电活性磷interstitial 空隙the eutectic temperature 共融温度boron-doped substrate 掺硼基体passivated emitter and rear locally diffused cells PERL电池losses 损失the front surface 前表面metallization techniques 金属化技术metal grids 金属栅线laboratory cells 实验室电池the metal lines 金属线selective emitter 选择性发射极photolithographic 光刻gradient 斜度precipitate 沉淀物localized contacts 局部接触point contacts 点接触passivated emitter rear totally diffused PERTsolder 焊接bare silicon 裸硅片high refraction index 高折射系数reflectance 反射encapsulation 封装antireflection coating ARC减反射层an optically thin dielectric layer 光学薄电介层interference effects 干涉效应texturing 制绒alkaline solutions 碱溶液etch 刻蚀/腐蚀anisotropically 各向异性地plane 晶面pyramids 金字塔a few microns 几微米etching time and temperature 腐蚀时间和温度manufacturing process 制造工艺process flow 工艺流程high yield 高产量starting material 原材料solar grade 太阳级a pseudo-square shape 单晶型状saw damage removal 去除损伤层fracture 裂纹acid solutions 酸溶液immerse 沉浸tank 槽texturization 制绒microscopic pyramids 极小的金字塔size 尺寸大小hinder the formation of the contacts 阻碍电极的形成the concentration,the temperature and the agitation of the solution 溶液的浓度,温度和搅拌the duration of the bath 溶液维持时间alcohol 酒精improve 改进增加homogeneity 同质性wettability 润湿性phosphorus diffusion 磷扩散eliminate adsorbed metallic impurities 消除吸附的金属杂质quartz furnaces 石英炉quartz boats 石英舟quartz tube 石英炉管bubbling nitrogen through liquid POCL3 小氮belt furnaces 链式炉back contact cell 背电极电池reverse voltage 反向电压reverse current 反向电流amorphous glass of phospho-silicates 非晶玻璃diluted HF 稀释HF溶液junction isolation 结绝缘coin-stacked 堆放barrel-type reactors 桶状反应腔fluorine 氟fluorine compound 氟化物simultaneously 同时地high throughput 高产出ARC deposition 减反层沉积Titanium dioxide TiO2Refraction index 折射系数Encapsulated cell 封装电池Atmospheric pressure chemical vapor deposition APCVDSprayed from a nozzle 喷嘴喷雾Hydrolyze 水解Spin -on 旋涂Front contact print 正电极印刷The front metallization 前面金属化Low contact resistance to silicon 低接触电阻Low bulk resistivity 低体电阻率Low line width with high aspect ratio 低线宽高比Good mechanical adhesion 好机械粘贴solderability 可焊性screen printing 丝网印刷comblike pattern 梳妆图案finger 指条bus bars 主栅线viscous 粘的solvent 溶剂back contact print 背电极印刷both silver and aluminum 银铝form ohmic contact 形成欧姆接触warp 弯曲cofiring of metal contacts 电极共烧organic components of the paste 浆料有机成分burn off 烧掉sinter 烧结perforate 穿透testing and sorting 测试分选I-V curve I-V曲线Module 组件Inhomogeneous 不均匀的Gallium 镓Degradation 衰减A small segregation coefficient 小分凝系数Asymmetric 不对称的High resolution 高分辨率Base resistivity 基体电阻率The process flow 工艺流程Antireflection coating 减反射层Cross section of a solar cell 太阳能电池横截面Dissipation 损耗Light-generated current 光生电流Incident photons 入射光子The ideal short circuit flow 理想短路电路The depletion region 耗尽区Quantum efficiency 量子效率Blue response 蓝光效应Spectral response 光谱响应Light-generated carriers 光生载流子Forward bias 正向偏压Simulation 模拟Equilibrium 平衡Superposition 重合The fourth quadrant 第四象限The saturation current 饱和电流Io Fill factor 填充因子FF Graphically 用图象表示The maximum theoretical FF 理论上Empirically 经验主义的Normalized Voc 规范化VocThe ideality factor n-factor 理想因子Terrestrial solar cells 地球上的电池At a temperature of 25C 25度下Under AM1.5 conditions 在AM1.5环境下Efficiency is defined as ××定义为Fraction 分数Parasitic resistances 寄生电阻Series resistance 串联电阻Shunt resistance 并联电阻The circuit diagram 电路图Be sensitive to temperature 易受温度影响The band gap of a semiconductor 半导体能隙The intrinsic carrier concentration 本征载流子的浓度Reduce the optical losses 减少光损Deuterated silicon nitride 含重氢氮化硅Buried contact solar cells BCSC Porous silicon PS 多孔硅Electrochemical etching 电化学腐蚀Screen printed SP 丝网印刷A sheet resistance of 45-50 ohm/sq 45到50方块电阻The reverse saturation current density Job 反向饱和电流密度Destructive interference 相消干涉Surface textingInverted pyramid 倒金字塔Four point probe 四探针Saw damage etchAlkaline 碱的Cut groove 开槽Conduction band 导带Valence band 价带B and O simultaneously in silicon 硼氧共存Iodine/methanol solution 碘酒/甲醇溶液Rheology 流变学Spin-on dopants 旋涂掺杂Spray-on dopants 喷涂掺杂The metallic impurities 金属杂质One slot for two wafers 一个槽两片Throughput 产量A standard POCL3 diffusion 标准POCL3扩散Back-to-back diffusion 背靠背扩散Heterojunction with intrinsic thin -layer HIT电池Refine 提炼Dye sensitized solar cell 染料敏化太阳电池Organic thin film solar cell 有机薄膜电池Infra red 红外光Unltra violet 紫外光Parasitic resistance 寄生电阻Theoretical efficiency 理论效率Busbar 主栅线Kerf loss 锯齿损失Electric charge 电荷Covalent bonds 共价键The coefficient of thermal expansion (CTE) 热膨胀系数Bump 鼓泡Alignment 基准Fiducial mark 基准符号Squeegee 橡胶带Isotropic plasma texturing 各向等离子制绒Block-cast multicrystalline silicon 整铸多晶硅Parasitic junction removal 寄生结的去除Iodine ethanol 碘酒Deionised water 去离子水Viscosity 粘性Mesh screen 网孔Emulsion 乳胶Properties of light 光特性Electromagnetic radiation 电磁辐射The visible light 可见光The wavelength,denoted by R 用R 表示波长An inverse relationship between……and……given by the equation:相反关系,可用方程表示Spectral irradiance 分光照度……is shown in the figure below. Directly convert electricity into sunlight 直接将电转换成光Raise an electron to a higher energy state 电子升入更高能级External circuit 外电路Meta-stable 亚稳态Light-generated current 光生电流Sweep apart by the electric field Quantum efficiency 量子效率The fourth quadrant 第四象限The spectrum of the incident light 入射光谱The AM1.5 spectrumThe FF is defined as the ratio of ……to……Graphically 如图所示Screen-printed solar cells 丝网印刷电池Phosphorous diffusion 磷扩散A simple homongeneous diffusion 均匀扩散Blue response 蓝光相应Shallow emitter 浅结Commercial production 商业生产Surface texturing to reduce reflection 表面制绒Etch pyramids on the wafer surface with a chemical solutionCrystal orientationTitanium dioxide TiO2PasteInorganic 无机的Glass 玻璃料DopantCompositionParticle sizeDistributionEtch SiNxContact pathSintering aidAdhesion 黏合性Ag powderMorphology 形态CrystallinityGlass effect on Ag/Si interface Reference cellOrganicResin 树脂Carrier 载体Rheology 流变性Printability 印刷性Aspect ratio 高宽比Functional groupMolecular weightAdditives 添加剂Surfactant 表面活性剂Thixotropic agent 触变剂Plasticizer 可塑剂Solvent 溶剂Boiling pointVapor pressure蒸汽压Solubility 溶解性Surface tension 表面张力Solderability Viscosity 黏性Solids contentFineness of grind ,研磨细度Dried thicknessFired thicknessDrying profilePeak firing temp300 mesh screenEmulsion thickness 乳胶厚度StorageShelf life 保存期限Thinning 稀释Eliminate Al bead formation 消除铝珠Low bowingWet depositPattern design: 100um*74太阳电池solar cell单晶硅太阳电池single crystalline silicon solar cell多晶硅太阳电池so multi crystalline silicon solar cell非晶硅太阳电池amorphous silicon solar cell薄膜太能能电池Thin-film solar cell多结太阳电池multijunction solar cell 化合物半导体太阳电池compound semiconductor solar cell用化合物半导体材料制成的太阳电池带硅太阳电池silicon ribbon solar cell光电子photo-electron短路电流short-circuit current (Isc)开路电压open-circuit voltage (V oc)最大功率maximum power (Pm)最大功率点maximum power point最佳工作点电压optimum operating voltage (Vn)最佳工作点电流optimum operating current (In)填充因子fill factor(curve factor)曲线修正系数curve correction coefficient太阳电池温度solar cell temperature串联电阻series resistance并联电阻shunt resistance转换效率cell efficiency暗电流dark current暗特性曲线dark characteristic curve光谱响应spectral response(spectral sensitivity)太阳电池组件module(solar cell module)隔离二极管blocking diode旁路二极管bypass (shunt) diode组件的电池额定工作温度NOCT(nominal operating cell temperature)短路电流的温度系数temperature coefficients of Isc开路电压的温度系数temperature coefficients of V oc峰值功率的温度系数temperature coefficients of Pm组件效率Module efficiency峰瓦watts peak额定功率rated power额定电压rated voltage额定电流rated current太阳能光伏系统solar photovoltaic (PV) system并网太阳能光伏发电系统Grid-Connected PV system独立太阳能光伏发电系统Stand alone PV system太阳能控制器solar controller逆变器inverter孤岛效应islanding逆变器变换效率inverter efficiency方阵(太阳电池方阵) array (solar cell array)子方阵sub-array (solar cell sub-array)充电控制器charge controller直流/直流电压变换器DC/DC converter(inverter)直流/交流电压变换器DC/AC converter(inverter)电网grid太阳跟踪控制器sun-tracking ontroller 并网接口utility interface光伏系统有功功率active power of PV power station光伏系统无功功率reactive power of PV power station光伏系统功率因数power factor of PV power station公共连接点point of common coupling 接线盒junction box发电量power generation输出功率output power交流电Alternating current断路器Circuit breaker汇流箱Combiner box配电箱Distribution box电能表Supply meter变压器Transformer太阳能光伏建筑一体化Building-integrated PV (BIPV)辐射radiation太阳辐照度Solar radiation散射辐照(散射太阳辐照)量diffuse irradiation(diffuse insolation)直射辐照direct irradiation (direct insolation)总辐射度(太阳辐照度) global irradiance (solar global irradiance)辐射计radiometer方位角Azimuth angle倾斜角Tilt angle太阳常数solar constant大气质量(AM) air mass太阳高度角solar elevation angle标准太阳电池standard solar cell (reference solar cell)太阳模拟器solar simulator太阳电池的标准测试条件为:环境温度25±2℃,用标准测量的光源辐照度为1000W/m2 并且有标准的太阳光谱辐照度分布。

中国诺奖级别新科技—量子反常霍尔效应英语

中国诺奖级别新科技—量子反常霍尔效应英语

中国诺奖级别新科技—量子反常霍尔效应英语全文共6篇示例,供读者参考篇1The Magical World of Quantum PhysicsHave you ever heard of something called quantum physics? It's a fancy word that describes the weird and wonderful world of tiny, tiny particles called atoms and electrons. These particles are so small that they behave in ways that seem almost magical!One of the most important discoveries in quantum physics is something called the Quantum Anomalous Hall Effect. It's a mouthful, I know, but let me try to explain it to you in a way that's easy to understand.Imagine a road, but instead of cars driving on it, you have electrons zipping along. Now, normally, these electrons would bump into each other and get all mixed up, just like cars in a traffic jam. But with the Quantum Anomalous Hall Effect, something special happens.Picture a big, strong police officer standing in the middle of the road. This police officer has a magical power – he can makeall the electrons go in the same direction, without any bumping or mixing up! It's like he's directing traffic, but for tiny particles instead of cars.Now, you might be wondering, "Why is this so important?" Well, let me tell you! Having all the electrons moving in the same direction without any resistance means that we can send information and electricity much more efficiently. It's like having a super-smooth highway for the electrons to travel on, without any potholes or roadblocks.This discovery was made by a team of brilliant Chinese scientists, and it's so important that they might even win a Nobel Prize for it! The Nobel Prize is like the Olympic gold medal of science – it's the highest honor a scientist can receive.But the Quantum Anomalous Hall Effect isn't just about winning awards; it has the potential to change the world! With this technology, we could create faster and more powerful computers, better ways to store and transfer information, and even new types of energy篇2China's Super Cool New Science Discovery - The Quantum Anomalous Hall EffectHey there, kids! Have you ever heard of something called the "Quantum Anomalous Hall Effect"? It's a really cool andmind-boggling scientific discovery that scientists in China have recently made. Get ready to have your mind blown!Imagine a world where electricity flows without any resistance, like a river without any rocks or obstacles in its way. That's basically what the Quantum Anomalous Hall Effect is all about! It's a phenomenon where electrons (the tiny particles that carry electricity) can flow through a material without any resistance or energy loss. Isn't that amazing?Now, you might be wondering, "Why is this such a big deal?" Well, let me tell you! In our regular everyday world, when electricity flows through materials like wires or circuits, there's always some resistance. This resistance causes energy to be lost as heat, which is why your phone or computer gets warm when you use them for a long time.But with the Quantum Anomalous Hall Effect, the electrons can flow without any resistance at all! It's like they're gliding effortlessly through the material, without any obstacles or bumps in their way. This means that we could potentially have electronic devices and circuits that don't generate any heat or waste any energy. How cool is that?The scientists in China who discovered this effect were studying a special kind of material called a "topological insulator." These materials are like a secret passageway for electrons, allowing them to flow along the surface without any resistance, while preventing them from passing through the inside.Imagine a river flowing on top of a giant sheet of ice. The water can flow freely on the surface, but it can't pass through the solid ice underneath. That's kind of how these topological insulators work, except with electrons instead of water.The Quantum Anomalous Hall Effect happens when these topological insulators are exposed to a powerful magnetic field. This magnetic field creates a special condition where the electrons can flow along the surface without any resistance at all, even at room temperature!Now, you might be thinking, "That's all well and good, but what does this mean for me?" Well, this discovery could lead to some pretty amazing things! Imagine having computers and electronic devices that never overheat or waste energy. You could play video games or watch movies for hours and hours without your devices getting hot or draining their batteries.But that's not all! The Quantum Anomalous Hall Effect could also lead to new and improved ways of generating, storing, and transmitting energy. We could have more efficient solar panels, better batteries, and even a way to transmit electricity over long distances without any energy loss.Scientists all around the world are really excited about this discovery because it opens up a whole new world of possibilities for technology and innovation. Who knows what kind of cool gadgets and devices we might see in the future thanks to the Quantum Anomalous Hall Effect?So, there you have it, kids! The Quantum Anomalous Hall Effect is a super cool and groundbreaking scientific discovery that could change the way we think about electronics, energy, and technology. It's like something straight out of a science fiction movie, but it's real and happening right here in China!Who knows, maybe one day you'll grow up to be a scientist and help us unlock even more amazing secrets of the quantum world. Until then, keep learning, keep exploring, and keep being curious about the incredible wonders of science!篇3The Wonderful World of Quantum Physics: A Journey into the Quantum Anomalous Hall EffectHave you ever heard of something called quantum physics? It's a fascinating field that explores the strange and mysterious world of tiny particles called atoms and even smaller things called subatomic particles. Imagine a world where the rules we're used to in our everyday lives don't quite apply! That's the world of quantum physics, and it's full of mind-boggling discoveries and incredible phenomena.One of the most exciting and recent breakthroughs in quantum physics comes from a team of brilliant Chinese scientists. They've discovered something called the Quantum Anomalous Hall Effect, and it's like a magic trick that could change the way we think about technology!Let me start by telling you a bit about electricity. You know how when you turn on a light switch, the bulb lights up? That's because electricity is flowing through the wires and into the bulb. But did you know that electricity is actually made up of tiny particles called electrons? These electrons flow through materials like metals and give us the electricity we use every day.Now, imagine if we could control the flow of these electrons in a very precise way, like directing them to move in a specificdirection without any external forces like magnets or electric fields. That's exactly what the Quantum Anomalous Hall Effect allows us to do!You see, in most materials, electrons can move in any direction, like a group of kids running around a playground. But in materials that exhibit the Quantum Anomalous Hall Effect, the electrons are forced to move in a specific direction, like a group of kids all running in a straight line without any adults telling them where to go!This might not seem like a big deal, but it's actually a huge deal in the world of quantum physics and technology. By controlling the flow of electrons so precisely, we can create incredibly efficient electronic devices and even build powerful quantum computers that can solve problems much faster than regular computers.The Chinese scientists who discovered the Quantum Anomalous Hall Effect used a special material called a topological insulator. This material is like a magician's hat – it looks ordinary on the outside, but it has some really weird and wonderful properties on the inside.Inside a topological insulator, the electrons behave in a very strange way. They can move freely on the surface of the material, but they can't move through the inside. It's like having篇4The Coolest New Science from China: Quantum Anomalous Hall EffectHey kids! Have you ever heard of something called the Quantum Anomalous Hall Effect? It's one of the most amazing new scientific discoveries to come out of China. And get this - some scientists think it could lead to a Nobel Prize! How cool is that?I know, I know, the name sounds kind of weird and complicated. But trust me, once you understand what it is, you'll think it's just as awesome as I do. It's all about controlling the movement of tiny, tiny particles called electrons using quantum physics and powerful magnetic fields.What's Quantum Physics?Before we dive into the Anomalous Hall Effect itself, we need to talk about quantum physics for a second. Quantum physics is sort of like the secret rules that govern how the smallest things inthe universe behave - things too tiny for us to even see with our eyes!You know how sometimes grown-ups say things like "You can't be in two places at once"? Well, in the quantum world, particles actually can be in multiple places at the same time! They behave in ways that just seem totally bizarre and counterintuitive to us. That's quantum physics for you.And get this - not only can quantum particles be in multiple places at once, but they also spin around like tops! Electrons, which are one type of quantum particle, have this crazy quantum spin that makes them act sort of like tiny magnets. Mind-blowing, right?The Weirder Than Weird Hall EffectOkay, so now that we've covered some quantum basics, we can talk about the Hall Effect. The regular old Hall Effect was discovered way back in 1879 by this dude named Edwin Hall (hence the name).Here's how it works: if you take a metal and apply a magnetic field to it while also running an electrical current through it, the magnetic field will actually deflect the flow of electrons in the metal to one side. Weird, huh?Scientists use the Hall Effect in all kinds of handy devices like sensors, computer chips, and even machines that can shoot out a deadly beam of radiation (just kidding on that last one...I think). But the regular Hall Effect has one big downside - it only works at incredibly cold temperatures near absolute zero. Not very practical!The Anomalous Hall EffectThis is where the new Quantum Anomalous Hall Effect discovered by scientists in China comes into play. They found a way to get the same cool electron-deflecting properties of the Hall Effect, but at much higher, more realistic temperatures. And they did it using some crazy quantum physics tricks.You see, the researchers used special materials called topological insulators that have insulating interiors but highly conductive surfaces. By sandwiching these topological insulators between two layers of magnets, they were able to produce a strange quantum phenomenon.Electrons on the surface of the materials started moving in one direction without any external energy needed to keep them going! It's like they created a perpetual motion machine for electrons on a quantum scale. The spinning quantum particlesget deflected by the magnetic layers and start flowing in weird looping patterns without any resistance.Why It's So AwesomeSo why is this Quantum Anomalous Hall Effect such a big deal? A few reasons:It could lead to way more efficient electronics that don't waste energy through heat and resistance like current devices do. Just imagine a computer chip that works with virtually no power at all!The effect allows for extremely precise control over the movement of electrons, which could unlock all kinds of crazy quantum computing applications we can barely even imagine yet.It gives scientists a totally new window into understanding the bizarre quantum realm and the funky behavior of particles at that scale.The materials used are relatively inexpensive and common compared to other cutting-edge quantum materials. So this isn't just a cool novelty - it could actually be commercialized one day.Some Science Celebrities Think It's Nobel-WorthyLots of big-shot scientists around the world are going gaga over this Quantum Anomalous Hall Effect discovered by the researchers in China. A few have even said they think it deserves a Nobel Prize!Now, as cool as that would be, we have to remember that not everyone agrees it's Nobel-level just yet. Science moves slow and there's always a ton of debate over what discoveries are truly groundbreaking enough to earn that high honor.But one thing's for sure - this effect is yet another example of how China is becoming a global powerhouse when it comes to cutting-edge physics and scientific research. Those Chinese scientists are really giving their counterparts in the US, Europe, and elsewhere a run for their money!The Future is QuantumWhether the Quantum Anomalous Hall Effect leads to a Nobel or not, one thing is certain - we're entering an age where quantum physics is going to transform technology in ways we can barely fathom right now.From quantum computers that could solve problems millions of times faster than today's machines, to quantum sensors that could detect even the faintest subatomic particles,to quantum encryption that would make data unhackable, this strange realm of quantum physics is going to change everything.So pay attention, kids! Quantum physics may seem like some weird, headache-inducing mumbo-jumbo now. But understanding these bizarre quantum phenomena could be the key to unlocking all the super-cool technologies of the future. Who knows, maybe one of you reading this could even grow up to be a famous quantum physicist yourselves!Either way, keep your eyes peeled for more wild quantum discoveries emerging from China and other science hotspots around the globe. The quantum revolution is coming, and based on amazing feats like the Anomalous Hall Effect, it's going to be one heckuva ride!篇5Whoa, Dudes! You'll Never Believe the Insanely Cool Quantum Tech from China!Hey there, kids! Get ready to have your minds totally blown by the most awesome scientific discovery ever - the quantum anomalous Hall effect! I know, I know, it sounds like a bunch of big, boring words, but trust me, this stuff is straight-upmind-blowing.First things first, let's talk about what "quantum" means. You know how everything in the universe is made up of tiny, tiny particles, right? Well, quantum is all about studying those teeny-weeny particles and how they behave. It's like a whole secret world that's too small for us to see with our eyes, but scientists can still figure it out with their mega-smart brains and super-powerful microscopes.Now, let's move on to the "anomalous Hall effect" part. Imagine you're a little electron (that's one of those tiny particles I was telling you about) and you're trying to cross a busy street. But instead of just going straight across, you get pushed to the side by some invisible force. That's kind of what the Hall effect is all about - electrons getting pushed sideways instead of going straight.But here's where it gets really cool: the "anomalous" part means that these electrons are getting pushed sideways even when there's no magnetic field around! Normally, you'd need a powerful magnet to make electrons move like that, but with this new quantum technology, they're doing it all by themselves. It's like they've got their own secret superpowers or something!Now, you might be wondering, "Why should I care about some silly electrons moving around?" Well, let me tell you, thisdiscovery is a huge deal! You see, scientists have been trying to figure out how to control the flow of electrons for ages. It's kind of like trying to herd a bunch of rowdy puppies - those little guys just want to go wherever they want!But with this new quantum anomalous Hall effect, scientists in China have finally cracked the code. They've found a way to make electrons move in a specific direction without any external forces. That means they can control the flow of electricity like never before!Imagine having a computer that never overheats, or a smartphone that never runs out of battery. With this new technology, we could create super-efficient electronic devices that waste way less energy. It's like having a magical power switch that can turn on and off the flow of electrons with just a flick of a wrist!And that's not even the coolest part! You know how sometimes your electronics get all glitchy and stop working properly? Well, with this quantum tech, those problems could be a thing of the past. See, the anomalous Hall effect happens in special materials called "topological insulators," which are like super-highways for electrons. No matter how many twists andturns they take, those little guys can't get lost or stuck in traffic jams.It's like having a navigation system that's so good, you could close your eyes and still end up at the right destination every single time. Pretty neat, huh?But wait, there's more! Scientists are also exploring the possibility of using this new technology for quantum computing. Now, I know you're probably thinking, "What the heck is quantum computing?" Well, let me break it down for you.You know how regular computers use ones and zeros to process information, right? Well, quantum computers use something called "qubits," which can exist as both one and zero at the same time. It's like having a coin that's heads and tails at the same exact moment - totally mind-boggling, I know!With this quantum anomalous Hall effect, scientists might be able to create super-stable qubits that can perform insanely complex calculations in the blink of an eye. We're talking about solving problems that would take regular computers millions of years to figure out. Imagine being able to predict the weather with 100% accuracy, or finding the cure for every disease known to humankind!So, what do you say, kids? Are you as pumped about this as I am? I know it might seem like a lot of mumbo-jumbo right now, but trust me, this is the kind of stuff that's going to change the world as we know it. Who knows, maybe one day you'll be the one working on the next big quantum breakthrough!In the meantime, keep your eyes peeled for more news about this amazing discovery from China. And remember, even though science can be super complicated sometimes, it's always worth paying attention to. After all, you never know when the next mind-blowing quantum secret might be revealed!篇6Title: A Magical Discovery in the World of Tiny Particles!Have you ever heard of something called the "Quantum Anomalous Hall Effect"? It might sound like a tongue twister, but it's actually a super cool new technology that was recently discovered by scientists in China!Imagine a world where everything is made up of tiny, tiny particles called atoms. These atoms are so small that you can't see them with your bare eyes, but they're the building blocks that make up everything around us – from the chair you're sitting on to the air you breathe.Now, these atoms can do some pretty amazing things when they're arranged in certain ways. Scientists have found that if they create special materials where the atoms are arranged just right, they can make something called an "electrical current" flow through the material without any resistance!You might be wondering, "What's so special about that?" Well, let me explain! Usually, when electricity flows through a material like a metal wire, it faces something called "resistance." This resistance makes it harder for the electricity to flow, kind of like trying to run through a thick forest – it's tough and you get slowed down.But with this new Quantum Anomalous Hall Effect, the electricity can flow through the special material without any resistance at all! It's like having a wide-open road with no obstacles, allowing the electricity to zoom through without any trouble.So, how does this magical effect work? It all comes down to the behavior of those tiny atoms and the way they interact with each other. You see, in these special materials, the atoms are arranged in a way that creates a kind of "force field" that protects the flow of electricity from any resistance.Imagine you're a tiny particle of electricity, and you're trying to move through this material. As you move, you encounter these force fields created by the atoms. Instead of slowing you down, these force fields actually guide you along a specific path, almost like having a team of tiny helpers clearing the way for you!This effect was discovered by a group of brilliant scientists in China, and it's considered a huge breakthrough in the field of quantum physics (the study of really, really small things). It could lead to all sorts of amazing technologies, like super-fast computers and more efficient ways to transmit electricity.But that's not all! This discovery is also important because it proves that China is at the forefront of cutting-edge scientific research. The scientists who made this discovery are being hailed as potential Nobel Prize winners, which is one of the highest honors a scientist can receive.Isn't it amazing how these tiny, invisible particles can do such incredible things? The world of science is full ofmind-blowing discoveries, and the Quantum Anomalous Hall Effect is just one example of the amazing things that can happen when brilliant minds come together to explore the mysteries of the universe.So, the next time you hear someone mention the "Quantum Anomalous Hall Effect," you can proudly say, "Oh, I know all about that! It's a magical discovery that allows electricity to flow without any resistance, and it was made by amazing Chinese scientists!" Who knows, maybe one day you'll be the one making groundbreaking discoveries like this!。

negative magnetic selection -回复

negative magnetic selection -回复

negative magnetic selection -回复Negative magnetic selection, also known as positive selection, is a process that is commonly used in biological research to isolate cells or particles with specific properties or biomarkers. By selectively binding to and removing unwanted cells, negative magnetic selection enables researchers to enrich a specific cell population of interest. In this article, we will delve deeper into the principles, techniques, and applications of negative magnetic selection.Negative magnetic selection relies on the principle of using magnetic beads conjugated with antibodies or ligands to bind to specific cell surface markers or antigens. These magnetic beads are typically coated with an antibody or ligand that recognizes and attaches to the unwanted cells or particles. As a result, when a magnetic field is applied, the cells to be removed, bound to the magnetic beads, can be separated from the desired population.The first step in negative magnetic selection is the selection of an appropriate antibody or ligand that will specifically bind to the unwanted cells. This is crucial since the success of the technique relies heavily on the specificity of the antibody or ligand. Various types of antibodies or ligands can be used, depending on thetarget cell population.Once the antibody or ligand is chosen, it is conjugated to magnetic beads. The beads are often made of a paramagnetic material, typically iron oxide, that enables them to be magnetically manipulated. The antibody or ligand is attached to the surface of the magnetic beads using chemical crosslinkers. This conjugation process ensures that the antibody or ligand maintains its binding specificity while being bound to the magnetic beads.After the conjugation process, the sample containing the desired cells mixed with the unwanted cells is prepared. The specific conditions for sample preparation can vary depending on the type of cells being targeted.Once the sample is prepared, it is mixed with the antibody or ligand-conjugated magnetic beads. The mixture is then incubated for a specific period of time to allow the antibody or ligand to bind to the unwanted cells.Next, a magnetic field is applied to the sample, which causes the antibody or ligand-conjugated magnetic beads along with theunwanted cells to migrate towards the magnet, while the desired cells remain in the supernatant. This magnetic separation step can be manually performed using a magnet or using automated magnetic separation systems.After separation, the supernatant containing the desired cells can be collected. However, it is important to carefully remove the supernatant without disturbing the bead-bound cells to ensure purity of the desired cell population. Washing steps can also be performed to further remove any remaining unwanted cells or contaminants.Finally, the purified cell population can be used for downstream analyses or experiments. Negative magnetic selection enables the isolation of specific cell populations with high purity and viability, making it a widely used technique in various fields such as immunology, stem cell research, and cancer biology.In conclusion, negative magnetic selection is a technique that allows for the isolation of specific cell populations by selectively removing unwanted cells using magnetic beads conjugated withantibodies or ligands. It is a versatile and powerful tool in biological research, enabling researchers to study and explore specific cell populations of interest.。

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a r X i v :c o n d -m a t /9811326v 1 [c o n d -m a t .s t r -e l ] 23 N o v 1998Non Magnetic Impurities in the Spin-Gap Phase of the CupratesCatherine P´e pin and Patrick A.LeeDepartment of Physics,Massachussetts Institute of Technology,Cambridge,MA 02139(February 1,2008)It is now well established that Zn doping of high-T C cuprates reduces their T C and triggers the appearence of a spin glass phase.In this context,we have solved exactly the problem of N non magnetic impurities in the staggered flux phase of the Heisenberg model which we assume to be a good mean-field approximation for the spin-gap phase of the cuprates.In this model,the quasi-particule spectrum has four nodes on the Fermi surface,and linearization of the spectrum in the neighbourhood of these nodes leads to a system of 2D Dirac fermions.In the presence of a macro-scopic number of (non magnetic)impurities,the problem has a characteristic logarithmic structure that renders ineffective the usual perturbative expansions.We have used this logarithmic structure to calculate an exact solution.For a concentration ni of impurities in the unitary scattering limit,the additional density of states is found to be proportional to ni/(w ln 2(|w |/D ))(where D is the infrared cut-offof the linearized spectrum)in analogy with the 1D case of doped spin-Peierls and two-leg ladders compounds.We argue that the system exhibits a quasi long-range order at T =0with instantaneous spin-spin correlations decreasing as ni/ln 4(ni/R ij )for large distances R ij be-tween impurity sites.We predict enhanced low energy fluctuations and compare these results to NMR and inelastic neutron scattering experiments in the high-T C cuprates.It is now established that the normal phase of the un-derdoped cuprates possesses a magnetic gap with the same anisotropy as the d-wave superconducting gap.The essential physics of the high-T C superconductors can be captured by focusing on the CuO 2planes.A microscopic starting point of theoretical analysis is the so-called t-J model.In a slave-boson mean-field formulation,the sys-tem undergoes spin and charge separation:an electron in these highly correlated materials is a composite object made of a spin 1/2neutral fermion (spinon)and a spinless charged boson (holon).The gap in the magnetic excita-tions of the normal state can be viewed as singlet for-mation between pairs of neutral fermions in the absence of coherence between the holons.We assume that this mean-field picture captures essentially the initial idea of Anderson [1]of a Resonance Valence Bond ground state for the normal phase of the cuprates.Substitution of Cu ions in the conduction planes of high-T C cuprates by different non magnetic ions presents an important experimental tool for the study of the metallic state.Unusual effects has been revealed espe-cially when the materials were doped with Zn.The va-lency of Zn is Zn 2+(d 10)and compared with the Cu 2+case,one electron is trapped by an additional positive charge of the nucleus,forming a singlet at the Zn site.In the spin-gap phase,it is experimentally found by NMR [3–6]experiments that a local magnetic moment of spin 1/2appears on Cu sites neighbouring the Zn im-purity.In high-T C cuprates the persistance of AF fluctuations in the metallic state is probably one of the most striking feature.Inelastic Neutron Scattering have established previously the existence of an energy gap in the imagi-nary part of the dynamical susceptibility in the normal and superconducting phases of the pure compound [2](without Zn).Substitution of Zn in CuO 2planes showsa striking transfer of spectral weight from high to low energies,partially filling the spin-gap [7,8].This is the signature of strong enhancement of AF correlations in the spin-gap phase.Earlier work has treated the effect of a single non magnetic impurity in the π-flux state [9]and the pair-wise interaction between them [10].It was found that each impurity creates a bound state in the pseudogap at ω=0.Interaction between a pair of impurities leads to a level splitting between these states given by ∆(R )∼1/(R ln(R )).Here we solve the problem of N non magnetic impuri-ties in the staggered flux phase of the Heisenberg model.In the mean-field of the t −J model at half filling,the π-flux phase is a system of 2dimensional Dirac Fermions with nodes located at the for points (±π/2,±π/2).The impurities are treated as repulsive scalar potentials ran-domly distributed on the lattice.The key idea of this solution is to write the T -matrix equation directly for N impurities and then to factor-ize the leading divergence.As the impurities are treated as scalar scattering centers,equations of motion can beclosed algebraically by a N ×N matrix ˆM which carac-terize the problem.Here M ij ∝4/(πD 2)iωn K 0(R ij |ωn |/D )if i and j be-long to the same sublattice andM ij ∝4/(πD 2)iωn K 1(R ij |ωn |/D ),if i and j belongto different sublattices.Now ˆT=−V 0ˆM −1and in the unitary limit,additional density of states can becasted into the form δρ(ω)=−1/πImT r ˆT ∂ˆM/∂ω =−V 0/πImT r ˆM−2∂ˆM 2/∂ω .All the configurations of impurities produce a loga-rithmic divergence in ˆM2that we factorize :ˆM 2∝ln |ωn R ij /D |ˆS,where ˆS is a N ×N matrix satisfying S ij =1if R ij <D/|ωn |and 0elsewhere.We argue thatthe leading part of the density of states is due to thelogarithmic divergence and the effect of ˆSis negligeable.The value of ˆSabove is an approximation by excess of the rest.We take ˆS −1ij=(|ωn |/D )U ij .For all j inside a circle of radius D/|ωn |around the point i ,U ij is a random configuration of ±1so that j U ij ∼D/|ωn |.In addition all the points j situated in the external boundary of this circle have U ij =−1/π.Elsewhere U ij =0.The maindifficulty in the inversion of ˆSis that two circles of radius D/|ωn |centered around two points i and j very close to each other will overlap,leading to the same number ofnon zero coefficients in the lines i and j of ˆS .In order to differentiate the sums k S ik S −1ki and k S ik S −1kjwe have thus used the external boundary of the circle tocompensate its volume in ˆS−1.With this inverse we show that the effect of ˆSis neg-ligeable in the density of states.The result is exact in the limit of low frequencies and in the unitary limit.We findδρ(ω)=n iD |+(π/2)2.(1)For one impurity alone[9,10],a δ-like bound state is cre-ated at ω=0.If the impurities were totally uncorrelated,we would find N δ-functions at ω=0.Here we see clearly the overlap of impurity states which leads to a broaden-ing of the δfunctions.It is interesting to compare this density of states with the one found for one dimensional spin-gap systems such as spin-Peierls and two-leg ladders systems where δρ(ω)∼1/ |ω|ln 3(|ω|/D ) .In order to adress the question of long-range order in this system,we compute the instantaneous sorrelation function S +i S −j .We find that at T =0,S +i S −j ∼n i[1]P.W.Anderson,Science 235,1196(1987).[2]J.Rossat-Mignot et al.,Physica C 185-189,86(1991)or H.F.Fong et al.,Phys.Rev.Lett.75,316(1995)or P.Bourges et al.,Phys.Rev.B 53,876(1996).[3]G.Xiao et al.,Phys.Rev.B 35,8782(1987).[4]H.Alloul et al.,Phys.Rev.Lett.67,3140(1991).[5]A.V.Mahajan et al.,Phys.Rev.Lett.723100(1994).[6]P.Mendels et al.,Phys.Rev.B 49,10035(1994).[7]Y.Sidis et al.,Phys.Rev.B 53,6811(1996).[8]K.Kakurai et al.,Phys.Rev.B 48,3485(1993).[9]N.Nagaosa and T.K Ng,Phys.Rev.B 51,15588(1995);[10]S.Krivenko and G.Khaliullin,JETP Lett.62,723(1995);G.Khaliullin et al.Phys.Rev.B 56,11882(1997).。

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