PhotoluminescencepropertiesofNa1.45La8.55(SiO4)6(F0.9O1.1)Eu 01
尼康 TIRF 细胞成像共享资源 (CISR) 742B Light Hall 快速指南说明书
Nikon TIRFCell Imaging Shared Resource (CISR) 742B Light Hall Quick Guide 1. Sign in to the log book.2. Turn on switches 1-4 in numerical order. The computer must be OFF before starting 1-4.∙1 is the power strip on the left wall.∙ 2 is the key on the top laser box. ∙3 is the key on the bottom laser box.∙4 is the green button on the power strip on the left and tothe back of the microscope.3. The computer should start up.4. Log in to the computer usingyour VUNetID and password.5. Start NIS -Elements software.6. Login to NIS -Elements using your first name and no password.1324561 32 45 61. There are preset layouts along the bottom of the screen for Widefield (WF), TIRF, and Bleaching. These will open the appropriate windows for each type of imaging.2. Along the top of the screen arepreset Optical Configurations . You will see all the default configurations. You may dupli-cate a configuration by right clicking. Rename for yourself, and now you are able to change this new duplicated configuration to fit your imaging needs. This new configura-tion will only be visible under your named login.3. To reuse settings from a previous image, open the image and right click within the image. You will have choice for “reuse camera settings”, “reuse acquisition settings”, or “reuse XYZ”.4.To view your image on the screen, use the green arrow “live” button on the top left. Stop with the red circle. Capture a single time point with the camera button. 5. Autoscale can be useful for viewing images when setting exposure time and laser power.6. For fast imaging, you may wish to adjust the frame size. In a live image, choose ROI. You may choose a preset size or define an ROI.7. Images may besaved as ei-ther .nd2 (Nikonformat) or TIF. Movies will save auto-matically ac-cording to your settings in the ND Acquisitionwindow.1 32 13 24 41.Choose objective (10x dry, 20x dry, or 60x Oil immersion)on left side of scope or in software. Use Nikon oil.2.Add oil to objective if using 60x TIRF lens.3.Loosen screws on stage to adjust for sample. Place samplein holder and tighten screws.4.On either side of scope, choose Coarse, Fine, or Extra Fineto move focus with focus knobs. Turn knob toward user tobring objective up.5.XY joystick also has Coarse, Fine, and Extra Fine formovement. Twist joystick to toggle between choices.132132JoystickPerfect Focus (PFS)1. To find your sample by bright light through the oculars, choose either DIC or BF from the top menu bar.2. To find your sample by fluorescence through the oculars, choose “FITC Eyes” configura-tion from top menu bar.3. Click “Spectra” to turn on widefield illumi-nation to eyes. Ensure that E100 is selected under Ti Pad under Light Path.4. You should be able to see fluorescence through the oculars. This filter show both Green and Red excitation.132 4 13 246.To visualize sample on screen, choose WF tab at bottomof software, and choose WF optical configuration at top(DAPI WF, FITC WF, TRITC WF, CY5 WF, CFP WF, YFP WF).7.Start “Live” with green arrow button.8.Focus with focus knobs on scope.9.Perfect Focus (PFS) may be used to find and hold correctfocal plane.10.Choose PFS ON button on front of scope. While thisbutton is blinking, focus with the focus knob. When PFSstops blinking, focal plane is found. Now use the PFS wheelfor fine focusing.1 32456132456JoystickPerfect Focus (PFS)81231. For live cell imaging, turn on orange power button on the incubator above the laser boxes.2. Three heaters will come to their appropriate tem-peratures. Top Heater will reach 43, Stage Heater will reach 39, and Bath Heater will reach 41. The Lens Heater needs to be switched on separately. Dicuss your needs with CISR staff.3. If not already in place, put the heated stage adap-tor in place. Use lab tape to hold in place.4. Ensure there is sufficient water in the heated stage water bath. Use dI H2O.5. Turn on the CO2 tank on the wall by the main CISR door. Turn on with the main silver knob.6. Check the CO2 indicator on the front of the incu-bator box to ensure CO2 is on.7. Although temperatures will be ready within 5-10 minutes, for optimal environmental conditions, al-low temperature and CO2 to equilibrate for 30 minutes.1231 231.Choose WF tab at the bottom of screen, and choose optical configuration at the top of the screen to match your fluorophore of interest. 2. To adjust signal, adjust Spectra % output as well as exposure time in Zyla camera window. 3. Use PFS to focus sample.4. Choose “Live ” green arrow to see image on screen.5. For single time point, click “Capture ”. Repeat for multiple channels, and merge to create multi -channel image. Merge can be found under File.6. For time -lapse acquisition, use ND Acquisition window.7. Set -up multiple channels under Wavelength. Choose each channel under Optical Configuration.8. Set -up time -lapse under Time. Choose Define. Inter-val is time between images, and Duration is total time.1 2 45 713 24 6 7 31256H-TIRFAutomated TIRF alignment in software1.Raise microscope condenser to make visualizing light easier.2.H-TIRF alignment is done in the software.3.For H-TIRF, open Ti-LAPP H-TIRF Pad.4.Adjust Angle until you see the laser spot on the wall.5.Continue adjusting until the light is overhead.6.Focus the spot to the smallest possible spot.7.Set Direction to 180.8.Adjust Angle again until you see TIRF signal on sample. You will see a bright signal andthen nothing. Adjust Angle back until see image again.9.Adjust Direction to fine tune across the best region of your sample.M-TIRFManual TIRF Alignment1.M-TIRF is done manually with adjustments on the microscope.2.Angle3.Focus4.Direction1.After finding an image by widefield, choose TIRF layout at bottom of screen and TIRF optical configuration at topof screen (488 H -TIRF, 561 M -TIRF, or General M -TIRF).In the previous sections you should have found cells and focused and adjusted TIRF angle.2. Optimize signal by adjusting laser power in the LU -NV Nidaq Pad window and exposure time in the Zyla camera window.3. For single time point, capture image with “capture” cam-era button along top of screen.4. For time -lapse imaging, open ND Acquisition window.5. First tab in ND Acquisition is for time -lapse. Interval is de-lay between images. Duration is total time -lapse. For shortest possible interval, choose “no delay” for interval.6. Choose RUN NOW in ND Acquisition window.1324561 32 45 61. Switch configuration to 561M@H -TIRF or 640M@H -TIRF on top of screen.2. Open the following 3 windows — Triggered Acquisition, ND Acquisition, and Ti -LAPP H -TIRF Pad3. For Triggered Acquisition add channel. For each channel add 3 lines —LineFilter WheelLU -NV NIDAQ Switcher .4. Choose appropriate excitation wavelength for Line .5. For 488, FilterWheel =1 and Switcher =1.6. For 561, FilterWheel =2 and Switcher =4.7. For 640, FilterWheel =3 and Switcher =4.8.Set exposure time in Triggered Acquisition window. Exposure time must be the same for both channels. 9. Set time -lapse parameters in ND Acquisition window. Open Define window.10. C heck “Enable Triggering” in Triggered Acquisition window.11. E nsure that the Lower Turret Layer in the Ti -LAPP Pad shows both H -TIRF and TIRF highlighted . 12. C lick “RUN NOW” in ND Acquisition window.1 3 24 5 6132 45661. Choose the “Bleaching” tab at the bottom of the screen.2. In addition to the TIRF set -up on the previous page, open the Bruker Miniscanner window.3. Choose laser for bleaching and set parameters (% and dwell time) in both the Bruker Miniscanner window and the LU_N4 Padwindow. 4. On right side of image window, right click on ROI icon to choose ROI shape. Draw ROI.5. Right click on ROI and choose “Use as Stimulation ROI ”.6. Set exposure time in camera window.7. Set bleaching and time -lapse in ND Sequence Acquisition window. Bleaching can be Sequential or Simultaneous (next page).12 5 34 1 2 53 47. For Sequential bleaching, set up actions in ND SequenceAcquisition window. For example, add #1 ND Acqui-sition, #2 Stimulation, #3 ND Acquisition. Open Define window for each to set interval and delay.8. For Simultaneous bleaching, set up actions in ND Se-quence Acquisition using Simultaneous Stimulation. Open Define window to set interval and delay. Stimula-tion time will be set based on ROI size and dwell time in miniscanner window. 9. For bleaching, ensure that the following buttons are active:A. Under Filters , choose Galvo on Turret 2(blue box, second from left)B. In Ti -LAPP Pad window, choose FRAP on Upper Turret LayerC. Under menu bar at top of screen, turn on AOTF. 10. RUN NOW. 1 2 43 1 24 3Check the CISR scheduling calendar to see if anyone issigned up after you. If another user is coming with 1 hour,please log out of the software, sign out in the log book, andleave the microscope and lasers ON.If no one is coming after you, follow the next steps.1.Close NIS software.2.Shut down the computer.3.Turn off power strip 4 (green)4.Turn off laser box 3 (bottom)5.Turn off laser box 2 (top).6.Turn off power strip 1 (left wall).7.Sign out in log book.e again soon!Updated 05/2016。
应用光学 英文版 chapter 3
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Photonic-crystal slow-light enhancement of nonlinear phase sensitivity
Photonic-crystal slow-light enhancementof nonlinear phase sensitivityMarin Soljacˇic´and Steven G.JohnsonDepartment of Physics and Center for Materials Science and Engineering,Massachusetts Institute of Technology,Cambridge,Massachusetts02139Shanhui FanDepartment of Electrical Engineering,Stanford University,Stanford,California94305Mihai Ibanescu,Erich Ippen,and J.D.JoannopoulosDepartment of Physics and Center for Materials Science and Engineering,Massachusetts Institute of Technology,Cambridge,Massachusetts02139Received November15,2001;revised manuscript received February15,2002;accepted February21,2002 We demonstrate how slow group velocities of light,which are readily achievable in photonic-crystal systems,can dramatically increase the induced phase shifts caused by small changes in the index of refraction.Suchincreased phase sensitivity may be used to decrease the sizes of many devices,including switches,routers,all-optical logical gates,wavelength converters,and others.At the same time a low group velocity greatlydecreases the power requirements needed to operate these devices.We show how these advantages can be used to design switches smaller than20mϫ200m in size by using readily available materials and at mod-est levels of power.With this approach,one could haveϳ105such devices on a surface that is2cm ϫ2cm,making it an important step towards large-scale all-optical integration.©2002Optical Society of AmericaOCIS code:900.9040.1.INTRODUCTIONThe size of high-speed active elements is currently a criti-cal problem in the path toward large-scale optical integra-tion.The smallest all-optical and electro-optical switches are of the order of millimeters1–3with little promise of getting much smaller.The reason for this problem is that the changes in the index of refraction in-duced by electro-optical or nonlinear optical effects,which are used to operate the devices,are very small[␦n is O(0.001)].If one wants to use an induced␦n to shift the phase of a signal byafter propagating through a lengthL of some material,the induced phase change is thenϭ2L␦n/AIR⇒LϭAIR/2␦n,requiring the size of the device to be millimeters or more.(A phase change ofcan be used to switch the signal on or off by one’s placing the material in an interferometer.For example, one could use a Mach–Zehnder interferometer,which we describe below.)It is well known that nonlinear effects can be enhanced in systems with slow group velocity as a result of the com-pression of the local energy density.Our observation in this paper is that the sensitivity of the phase to the in-duced change in the index of refraction can be drastically enhanced if one operates in the regimes of slow group ve-locities.Slow group velocities occur quite commonly in photonic crystals and in systems with electromagneti-cally induced transparency.4–7According to perturbation theory,the induced shift in the optical frequency of a pho-tonic band mode at afixed k that is due to a small␦n is given by␦(k)/ϭϪ(␦n/n)wherespecifies the frac-tion of the total energy of the mode in question that is stored in the region where␦n is being applied.How-ever,because the induced phase shift actually depends on␦k,the phase shift can be greatly enhanced if v G ϭd/d k is small,as illustrated in Fig.1.More pre-cisely,the induced phase shift is␦ϭL*␦kϷL*␦/(d/d k)⇒␦ϷL␦n/(nv G).In other words,if␦ϭϪ,we haveLAIRϷ12ͩn␦nͪͩv G cͪ,(1)or for a given␦n the size of the device scales linearly with v G.An electro-optical device that is smaller in length by a factor of v G/c also requires v G/c less power to operate, which is perhaps an even more important consideration for large-scale integration.Thus for an electro-optic modulator or a switch the device enhancement is a factor of(v G/c)2.The same improvement by(v G/c)2is achieved in an all-optical gate by use of the Kerr effect. In this case,the␦n change is self-induced by the signal itself,and␦n is proportional to the local electricfield squared.The savings in the length of the device is the same v G/c as for an electro-optic device.In addition,be-cause of the small v G,the energy of the pulse is tempo-rally compressed by a factor of v G/c,so the induced␦n is0740-3224/2002/092052-08$15.00©2002Optical Society of America1/(v G /c )times larger.Thus for a pulse of a fixed total en-ergy,we can actually use a device that is smaller by a fac-tor of approximately (v G /c )2.2.IMPROVEMENTS OFFERED BYPHOTONIC CRYSTALSPhotonic crystals (PCs)are ideal systems in which one can achieve arbitrarily low group velocities.8–10PCs are artificially created materials in which the index of refrac-tion has a one-dimensional,a two-dimensional (2-D),or a three-dimensional (3-D)periodicity.Under appropriate conditions and when the maximum index contrast is suf-ficiently large,a photonic bandgap appears:a range of frequencies in which light cannot propagate in the crys-tal.Because of this gap,photons inside a PC have many properties that are similar to electrons in semiconductors.Consequently,PCs are considered to be promising media for large-scale integrated optics.In particular,line de-fects in a PC can lead to guided-mode bands inside the photonic bandgap.These bands can,in principle,be made as flat as desired by the appropriate design.Typi-cal group velocities for reasonable linear defect guided modes can easily be O (10Ϫ2c Ϫ10Ϫ3c ),thus making it possible to shrink the size of all-optical andelectro-opticalFig.1.Induced change in the photonic band frequency in a ma-terial depends mostly on the induced index of refraction change.However,depending on the local group velocity,this can lead to drastically different changes in the wave vector.Here we show this effect for two dispersion curves:the slow-light band with v G ϭ0.022c used in a device proposed in this paper (green),and the dispersion curve of a uniform material with n ϭ3.5(blue).We apply the same frequency shift (␦ϭ0.001)to both disper-sion curves to get the respective dashed curves.As we can see,the same ␦(black)leads to two very different ␦k(red).Fig.2.Sketch of the Mach –Zehnder interferometer that we used to demonstrate enhancement of nonlinear phase sensitivity that is due to slow light in PCs.The slow-light system that we use is a coupled-cavity waveguide (CCW),as shown in the upper left-hand enlarged area of this figure.(Throughout the paper,cavities are colored green to make them more visible).The signal enters the device on the right,is split equally at the first T branch into the upper and the lower waveguides,and recombines at the T branch on the left.If no index change is induced,the parts of the signal coming from the top and the bottom interfere constructively at the second T branch,and the pulse exists entirely at the output.If we induce the index change in the active region in an appropriate manner,the two parts of the signal interfere destructively,and the pulse is reflected back toward the input,with no signal being observed at the output.The points marked (A),(B),and (C)correspond to field-monitor points during the simulations.The results of observations from these points are displayed in Fig.3.devices in PCs by approximately(v G/c)2ϳ10Ϫ4–10Ϫ6, while keeping the operating powerfixed.Group velocity of c/100was experimentally demonstrated in a photonic crystal system recently.11For definiteness,we focus our attention on a particular class of PC line-defect systems that can have low group velocities;namely,we discuss coupled-cavity wave-guides12,13(CCWs).Nonlinear properties of CCWs(also called coupled resonator optical waveguides)were very recently summarized in Ref.14.A CCW consists of many cavities,as shown in Fig.2.Each of these cavities when isolated supports a resonant mode with the resonant fre-quency well inside the bandgap.When we bring such cavities close to each other to form a linear defect,as is shown in Fig.2,the photons can propagate down the de-fect by tunneling from one cavity to another.Conse-quently,the group velocity is small,and the less closely coupled the cavities are,the slower the group velocity. Group velocities of c/1000or even smaller are easy to at-tain in such systems.Because the cavities in a CCW are so weakly coupled to each other,the tight-binding method12–17is an excellent approximation in deriving the dispersion relation.The result is(k)ϭ⍀͓1Ϫ⌬␣ϩcos(k⌳)͔,where⍀is the single-cavity resonant frequency,⌳is the physical dis-tance between the cavities,and⌬␣ӶӶ1in the tight-binding approximation,so we can approximate⌬␣ϭ0in our analysis.The CCW system has a zero-dispersion point at kϭ/2⌳.We choose this to be the operation point of our devices because the devices in that case have far larger bandwidths than most other slow-light systems would have;in our simulations the useful bandwidth of such CCW devices is typically more than1/3of the entire CCW band.(For example,in a Mach–Zehnder interferom-eter,useful bandwidth would be defined as the range of values ofin which the extinction ratio is less than99% when the device is in its OFF state.)To see that the CCW system is optimal with respect to bandwidth,we note that,to maximize the bandwidth,one wants⌬k ϵk(,nϩ␦n)Ϫk(,n)to be as independent ofas possible,for as large a range ofas possible.One way to satisfy this condition is,for example,if k()is nearly linear and if the dominant effect of␦n is to shift k() upward or downward by a nearly constant amount.This approach is precisely what happens in CCW sys-tems.First,note that(k,␦n)ϭ⍀(1ϩ␦1)͓1ϩ(1ϩ␦2)cos(k⌳)͔,where␦1and␦2are thefirst order in␦n. Thus␦n shifts the curve upward by⍀␦1and also changes the slope at the zero-dispersion point:→(1ϩ␦1)(1ϩ␦2).But,because the slope was so small to start with (asӶ1in slow-light systems),the dominant effect in ⌬k(,␦n)is the linear shift upward,which produces a term independent of.To make the claim from the previous paragraph more precise,we can expand(k,␦n)about the zero-dispersion point and invert the relation to get k(,␦n) and thereby⌬k(,␦n)Ϸ͓␦1/⍀ϩ␦2(/⍀Ϫ1)͔/⌳. Moreover,because we are working with a slow-light band, we are interested only inthat can be written as ϭ⍀ϩ␦,where␦Ӷ⍀.Thus⌬k(␦,␦n)Ϸ͕␦1ϩ͓(␦/⍀)*(␦1ϩ␦2)͔͖/⌳,and,because␦/⍀Ӷ1,⌬k is almost constant across most of the slow-light band.In fact,a similar derivation can easily be adapted to apply for any zero-dispersion point of anyflat dispersion curve. Consequently,if one wants to use slow light to enhance the nonlinear phase sensitivity,one should operate at a zero-dispersion point because this optimizes the available bandwidth of the device,even in non-CCW systems.3.SLOW-LIGHT PHOTONIC-CRYSTAL MACH–ZEHNDER DEVICESTo demonstrate how the ideas presented above can be put to work in practice,we perform numerical-simulation studies of a2-D CCW system.The system is illustrated in Fig.2.It consists of a square lattice of high-⑀dielec-tric rods(⑀Hϭ12.25)embedded in a low-⑀dielectric ma-terial(⑀Lϭ2.25).The lattice spacing is denoted a,and the radius of each rod is rϭ0.25a.The CCW is created by the reduction of the radius of each fourth rod in a line to r/3,so⌳ϭ4a.We focus our attention on TM modes, which have electricfields parallel to the rods.To begin our study of the modes of this system,we per-form frequency-domain calculations by using precondi-tioned conjugate gradient minimization of the Rayleigh quotient in a2-D plane-wave basis,as described in detail in Ref.18.To model our system,we employ a supercell geometry of size(11aϫ4a)and a grid of72points/a. The results reveal an18%photonic bandgap between MINϭ0.24(2c)/a andMAXϭ0.29(2c)/a.Adding a line defect of CCWs mutually spaced⌳apart leads to a CCW band that can be excellently approximated by ϭ͓0.26522Ϫ0.00277cos(k⌳)͔(2c/a).This gives v G ϭ0.0695c at the point of zero dispersion for the case of ⌳ϭ4a.(To demonstrate our ideas,we use a v G that is not extraordinarily small to be less demanding on the time-domain numerical simulations.)The frequency-domain calculation further tells us that roughly50%of the energy of each mode is in the high-⑀regions and that this ratio is fairly independent of k.To put things in perspective,we can use the frequency-domain code results to estimate sizes of some real devices. For purposes of illustration only,we simulate a device in which we modify the high-⑀material by␦n/n Hϭ2ϫ10Ϫ3to perform the switching,say,through an electro-optical effect.We pick a somewhat unrealistically large ␦n/n H to lower the requirements on our numerical simu-lations;as mentioned earlier,the length of the system varies inversely with␦n/n H,and we can scale our results to experimentally realizable␦n accordingly.Let us now ask how long the CCW has to be for the signal to accumu-late an exactphase shift when propagating down this CCW compared with the case when␦nϭ0.We run the frequency-domain code twice with the two different val-ues of⑀H for18uniformly distributed k between kϭ0 and k at the edge of thefirst Brillouin zone.Next,we perform the tight-binding curvefits to the two sets of data.From these twofitted curves it is trivial to get⌬k at the point of zero dispersion and thereby L from the re-lation L⌬kϭ.The result is that the CCW has to be approximately Lϭ31.6⌳ϭ35.5AIR long to achieve aphase shift when propagating down this CCW.Based on what we learned from the frequency-domain calculations,we can now design a Mach –Zehnder interferometer for use in the time domain.Specifically,we perform 2-D finite-difference time-domainsimulations 19with perfectly matched layer absorbing boundary conditions.20Our numerical resolution is 24ϫ24points/a 2,meaning that the entire computa-tional cell is 5000ϫ696points.Because our computa-tional cell is large enough,we can easily distinguish the pulses reflected from the boundaries of our simulation from the real physical pulses.For the waveguides,we use the CCWs as described above.The time-domain simulation reveals that there is a slow-light band be-tween MIN ϭ0.2620(2c )/a and MAX ϭ0.2676(2c )/a ,which is within 0.2%of the frequency-domain predic-tion.Next,we use results of previous research to imple-ment the needed 90°bends 21and T branches.22At the input of our Mach –Zehnder interferometer,we launch a pulse with a Gaussian frequency profile,a carrier frequency of 0ϭ0.2648(2c )/a ,and a FWHM of ⌬/0ϭ1/200.During the simulations,we monitor the electric field E (t )at eight points in the system.We show the placement of three of these points in Fig.2.The ob-servations at the other five points (which include the branch points and the end points)provide us with no new information but are monitored just to ensure self-consistency.When ␦n is OFF ,as in the first column of Fig.3,the signal comes in at the input,splits equally into the two arms at the first branch,and recombines at the second branch,traveling toward the output,as seen in Fig.4.Apart from very small reflections (approximately 2%)that are due to the lack of full,optimized branches,most of the signal reaches the output.Next we change the high-index material to n H →(1ϩ0.00166)n H in the upper half of the active region shown in Fig.2and n H →(1Ϫ0.00166)n H in the lower half of the active re-gion shown in Fig.2.23Because of this difference in n H ,the part of the signal traveling in the upper armaccumu-Fig.3.Demonstration of nonlinear switching in a slow-light PC system.The electric field squared is plotted as a function of time,observed at three different points:(A),(B),and (C)in the system of Fig.2.The left-hand column corresponds to the case when no index change is induced;most of the incoming signal at (A)exits at the output (C).The column on the right-hand side corresponds to the case when the nonlinear index change is induced;the signal at the output (C)in the right-hand column is drastically reduced compared with the output (C)in the left-hand column.The black and the blue signals represent the pulses traveling from right to left and left to right,respectively,in Fig.2.The gray pulses are spurious reflections (mostly from the interface between the PC and air at the exits of the device).latesmore phase shift than the half traveling in the lower arm.24Thus the signal interferes destructively at the output,and is reflected back toward the input,as can be seen from Fig.5.Even without anyfine tuning,we observe a signal at the output that is16.4dB smaller than in the case when␦n is not applied.As was mentioned above,CCWs have an added benefit in that the bandwidth of the device above is optimal be-cause of the existence of the zero-dispersion point.For example,the useful bandwidth of the device of Figs.2–5 is⌬/0Ϸ1/150.The useful bandwidth of the CCW de-vices scales roughly linearly with v G/⌳for small␦n.Onthe other hand,the performance gets better with1/v G2. Therefore,if we are willing to have a device with a smaller useful bandwidth,we can have a much more effi-cient device.For example,a40-Gbit/s telecommunica-tions stream has a bandwidth of⌬/0Ϸ1/3000,so we can afford to operate the device with pulses that have400 times less energy than when using the device of Figs.2–5 for the same device size.An additional savings of power occurs in CCW systems because most of the power is tightly confined to the cavities.In contrast,in a uniform waveguide power is uniformly distributed along it.This fact typically produces an additional power savings of a factor of2–3or more,depending on the geometry of the system.To make the idea of the previous paragraph a bit more explicit,we explore the possibility of an all-optical device with more optimized parameters.We envision a system similar to that of Figs.2–5but with coupled cavities spaced six lattice periods apart,so⌳ϭ6a.In this casethe group velocity is0.022c(approximately a factor of3slower than in the case above).Now we use the distribu-tion of thefields given by the frequency-domain code tocalculate[by usingfirst-order perturbation theory in thesmall quantity␦n(r)/n(r)]what happens to the slow-light band after the nonlinear Kerr effect is turned on.We apply the Kerr effect only in the high-index regionsbecause high-index materials typically have nonlinear co-efficients that are much higher than those of low-indexmaterials.We now pick physically realistic parametersso that the largest induced␦n/n anywhere is2ϫ10Ϫ4. In this case,the perturbation theory tells us that,ifwe operate at the zero-dispersion point and the Kerreffect is present only in one arm of the interferometer,the length of the device has to be70.97⌳ϭ175m at ϭ1.55m.The transverse size of the device would then be roughly20m.Suppose that our high-index ma-terial has a Kerr coefficient of n2ϭ1.5ϫ10Ϫ13cm2/W (which is a value achievable in a number of materials,GaAs at0ϭ1.55m being one of them),where the Kerr effect is given by␦nϭn2I.In that case,we would need roughly0.26W of peak power to operate our device.(For comparison,an integrated-optics device made of same (uniform)high-index material with a cross-sectional area of0.5mϫ0.5m would have to be5cm long to operate at the same0.26-W peak power.)The useful bandwidth of our device would be at least⌬/0Ϸ1/670,meaning that it could operate at bit rates greater than100Gbits/s. For lower bit rates with less bandwidth theperformance Fig.4.Snapshots of the electricfield pulse in the system of Fig.2for the case when no index change is induced.The top panel rep-resents120,000time steps,and bottom panel160,000time steps.The signal entering at the input exits at the output of the device;the device is in its ON state.enhancements could be even greater.Finally,even the design outlined here can be further improved by our con-fining more energy into high-⑀regions,(for example,by use of a triangular-lattice PC system with air holes in di-electric)or by our increasing the index contrast between the high-⑀and the low-⑀materials.By optimizing the de-sign along these lines,one should be able to enhance the system by additional factors of 3–4without much effort.4.PHOTONIC CRYSTAL 1Ã2SWITCHThe switching mechanism in this paper is general enough for use in a variety of all-optical logical operations,switching,routing,wavelength conversion,and optical imprinting.For example,we can enhance the applicabil-ity of our design by allowing the device to have two outputs (as shown in the upper plot of Fig.6)instead of just one (as shown in Fig.2).In this case the nonlinear mechanism in question directs input to either of the two outputs.To achieve this,we put a directional coupler at the output of the device instead of terminating the device with a simple branch.The directional coupler has to be designed so that (depending on the relative phase of its two inputs)it directs both of them either to the upper or the lower of its two outputs.Almost any directional cou-pler can be designed to perform this function.A PC implementation could be based on the waveguide drop-filter design of Ref.25.For this application,we need only to operate it at a frequency that is offset from that originally intended.An advantage of this particular design is that it adds only 1to the length of the entire device.The device of Ref.25involves twolinearFig.5.Snapshots of the electric field pulse in the system of Fig.2for the case when an index change is induced.Top panel represents 120,000time steps,the middle panel 160,000time steps,and the bottom panel 200,000time steps.The signal entering at the input is reflected back toward the input;device is in its OFF state.waveguides and a coupling element (consisting of twopoint-defect cavities)between them,as shown in the inset of the upper panel of Fig.6.If we label the waveguides as 1and 2,we can writeA OUT1ϭA IN1ͩ1Ϫi ␣Ϫ0ϩi ␣ͪϪA IN2ͩi ␣Ϫ0ϩi ␣ͪ,A OUT2ϭA IN2ͩ1Ϫi ␣Ϫ0ϩi ␣ͪϪA IN1ͩi ␣Ϫ0ϩi ␣ͪ,(2)where A OUT j and A IN j are the amplitudes at the output and the input,respectively,of waveguide j the central fre-quency of the two coupled cavities is 0,and 2␣is the width of the resonance.In our device,we will have equal intensities coming to both inputs,and we would like all the energy to exit at a single output.If we look at this picture from a time-reversed perspective,this tells us that we have to operate the directional coupler at the fre-quency 0Ϯ␣,rather than operating it at ϭ0,as was done in Ref.25.This time-reversed picture also tells us that [according to Eqs.(2)],if we choose to operate at frequency 0ϩ␣,we get 100%transmission at the out-put of waveguide 2if the input of waveguide 2lags wave-guide 1in phase by exactly /2.We get 100%transmis-sion at the output of waveguide 1if the input of waveguide 2is /2ahead.The dependence of transmis-sion on the phase difference ⌬between waveguides 1and 2is illustrated in the lower plot of Fig.6.Operating at the frequency 0Ϫ␣reverses this relative phase de-pendence.For example,let us pick as the operating frequency 0ϩ␣and say that the intensities entering the device from the two waveguides are the same distance apart for the fact that waveguide 2lags waveguide 1in phase by /2.ThenI OUT1I IN1ϩI IN2ϭ12͑Ϫ0Ϫ␣͒2͑Ϫ0͒2ϩ␣2,I OUT2I IN1ϩI IN2ϭ12͑Ϫ0ϩ␣͒2͑Ϫ0͒2ϩ␣2,(3)where I IN1,IN2and I OUT1,OUT2denote the intensities at the inputs and the outputs of the respective waveguides.Ac-cording to Eqs.(3),the useful bandwidth of this direc-tional coupler approximately equals 2␣.In contrast to Ref.25,we are not forced to operate in the regime of very small ␣;consequently,2␣can readily be designed to be larger than the bandwidth of our Mach –Zehnder interfer-ometer,so the directional coupler will not impair the per-formance of the device.5.CONCLUDING REMARKSThe sizes of the nonlinear devices described in this paper that use physically realistic values of ␦n are small enough to contain 105of them on a chip of surface size 2cm ϫ2cm,operated at moderate pulse energy levels,and with speeds greater than 100Gbits/s.Therefore,we view the research described here as an important step to-ward enabling large-scale integration of truly all-optical logic circuits.Finally,it should be emphasized that all the results and arguments presented in this paper (which has focused on simplified 2-D models)apply immediately to three dimensions.In fact,very recently,new 3-D PC structures have been introduced that reproduce the prop-erties of linear and point defect modes in 2-D PC systems.26,27Such 3-D structures should prove to be ideal candidates for the eventual practical realization of the nonlinear slow-light designs discussed in thispaper.Fig.6.Mach –Zehnder interferometer operating as a router be-tween two different outputs.This operation is achieved by the termination of the interferometer with a directional coupler rather than with a T branch,as shown in the upper panel.The lower panel gives the calculated intensity at each of the two out-puts as a function of the phase difference between the upper and the lower input to the directional coupler.ACKNOWLEDGMENTThis study was supported in part by the Materials Research Science and Engineering Center program of the National Science Foundation under grant DMR-9400334.REFERENCES AND NOTES1.W.E.Martin,‘‘A new waveguide switch/modulator for inte-grated optics,’’Appl.Phys.Lett.26,562–564(1975).2.K.Kawano,S.Sekine,H.Takeuchi,M.Wada,M.Kohtoku,N.Yoshimoto,T.Ito,M.Yanagibashi,S.Kondo,and Y.Noguchi,‘‘4ϫ4InGaAlAs/InAlAs MQW directional cou-pler waveguide switch modules integrated with spot-size converters and their10-Gbit/s operation,’’Electron.Lett.31,96–97(1995).3. A.Sneh,J.E.Zucker,and ler,‘‘Compact,low-cross-talk,and low-propagation-loss quantum-well Y-branch switches,’’IEEE Photonics Technol.Lett.8,1644–1646 (1996).4.S.E.Harris,‘‘Electromagnetically induced transparency,’’Phys.Today50,36–42(1997).5.L.V.Hau,S.E.Harris,Z.Dutton,and C.H.Behroozi,‘‘Light speed reduction to17metres per second in an ultra-cold atomic gas,’’Nature(London)397,594–598(1999). 6.M.O.Scully and M.S.Zubairy,Quantum Optics(Cam-bridge U.Press,Cambridge,UK,1997).7.M.D.Lukin and A.Imamoglu,‘‘Controlling photons usingelectromagnetically induced transparency,’’Nature(Lon-don)413,273–276(2001).8. E.Yablonovitch,‘‘Inhibited spontaneous emission in solid-state physics and electronics,’’Phys.Rev.Lett.58,2059–2062(1987).9.J.Sajeev,‘‘Strong localization of photons in certain disor-dered dielectric superlattices,’’Phys.Rev.Lett.58,2486–2489(1987).10.J.D.Joannopoulos,R.D.Meade,and J.N.Winn,PhotonicCrystals:Molding the Flow of Light(Princeton U.Press, Princeton,N.J.,1995).11.M.Notomi,K.Yamada,A.Shinya,J.Takahashi,C.Taka-hashi,and I.Yokohama,‘‘Extremely large group-velocity dispersion of line-defect waveguides in photonic crystal slabs,’’Phys.Rev.Lett.87,235902(1–4)(2001).12. A.Yariv,Y.Xu,R.K.Lee,and A.Scherer,‘‘Coupled-resonator optical waveguide:a proposal and analysis,’’Opt.Lett.24,711–713(1999).13.S.Mookherjea and A.Yariv,‘‘Second-harmonic generationwith pulses in a coupled-resonator optical waveguide,’’Phys.Rev.E65,026607(1–8)(2002).14.S.Mookherjea and A.Yariv,‘‘Coupled resonator opticalwaveguides,’’IEEE J.Sel.Top.Quantum Electron.8,448–456(2002).15.M.Bayindir,B.Temelkuran,and E.Ozbay,‘‘Tight-bindingdescription of the coupled defect modes in three-dimensional photonic crystals,’’Phys.Rev.Lett.84,2140–2143(2000).16.See,for example,N.W.Ashcroft and N.D.Mermin,Solid-State Physics(Saunders,Philadelphia,Pa.,1976).17. E.Lidorikis,M.M.Sigalas,E.N.Economou,and C.M.Soukoulis,‘‘Tight-binding parameterization for photonic band gap materials,’’Phys.Rev.Lett.81,1405–1408(1998).18.S.G.Johnson and J. D.Joannopoulos,‘‘Block-iterativefrequency-domain methods for Maxwell’s equations in a plane-wave basis,’’Opt.Express8,173–190(2001).19.For a review,see A.Taflove,Computational Electrodynam-ics:The Finite-Difference Time-Domain Method(Artech, Norwood,Mass.,1995).20.J.P.Berenger,‘‘A perfectly matched layer for the absorptionof electromagnetic waves,’’put.Phys.114,185–200 (1994).21. A.Mekis,J.C.Chen,I.Kurland,S.Fan,P.R.Villeneuve,and J.D.Joannopoulos,‘‘High transmission through sharp bends in photonic crystal waveguides,’’Phys.Rev.Lett.77, 3787–3790(1996).22.S.Fan,S.G.Johnson,J.D.Joannopoulos,C.Manolatou,and H.A.Haus,‘‘Waveguide branches in photonic crystals,’’J.Opt.Soc.Am.B18,960–963(1998).23.In accord with the frequency-domain prediction,the activeregion therefore needs to be approximately16coupled cavi-ties long if␦n/n Hϭ0.002;wefind that we actually need ␦n/n Hϭ0.00166in the time-domain calculation.We at-tribute most of the discrepancy to the inadequacy of the tight-binding approximation,thefinite bandwidth of the beam,and the numerical inaccuracies of the simulations.24.One might wonder about the practicality of applying a largepositivefield in one arm and a large negativefield in the other arm of such a tiny device.All that is required,how-ever,is to establish a strong gradient of thefield between the two arms.25.S.Fan,P.R.Villeneuve,J.D.Joannopoulos,and H.A.Haus,‘‘Channel drop tunneling through localized states,’’Phys.Rev.Lett.80,960–963(1998).26.S.G.Johnson and J. D.Joannopoulos,‘‘Three-dimensionally periodic dielectric layered structure with omnidirectional photonic band gap,’’Appl.Phys.Lett.77, 3490–3492(2000).27.M.L.Povinelli,S.G.Johnson,S.Fan,and J.D.Joannopo-ulos,‘‘Emulation of two-dimensional photonic crystal defect modes in a photonic crystal with a three-dimensional pho-tonic band gap,’’Phys.Rev.B64,0753131(1–8)(2001).。
photoluminescence
Mechanism of photoluminescence
molecular energy level and its transition: 1. electronic level: rotational energy-levels and vibrational energy levels. Basic state(S0) →Excitation state(S1,S2‥) Excitation state(S1) →Basic state(S0)
Excitation spectrum:the measurement of wavelength is constant(maximum emssion wavelength), it measured curve that the relationship of intensity of material excitation light and wavelength of its excitation light Emission pectrum:the measurement of wavelength is constant(maximum excitation wavelength), it measured curve that the relationship of intensity of material emission PL and wavelength of its excitation emission PL
lex benzene naphthalene anthracene 205 286 356
lem 278 321 404
jf 0.11 0.29 0.36
3. Rigid structure and coplanar of molecular poss strong PL.
Envision多标签板读机产品说明书
IntroductionPhotometric assays are widely used for biochemical or cell based studies. Here we show on examples, NADH and Methyl-red, the possibility of performing those studies using absorbance mode on an EnVision ® Multilabel Plate Reader. NADH is a biomolecule, which participates in a number of biochemical reactions. Therefore it is widely studied among researchers.Methyl-red is commonly used as a pH indicator. If the pH of the solution is less than 4.2, methyl-red appears as red. If the pH of the solution is above 6.3, it appears as yellow. This indicator can be used to follow, e.g., the bacteria medium growth.EnVision in photometric applicationsEnVision plate reader is an instrument with modular design, supporting all of the following technologies: AlphaScreen ®/AlphaLISA ®, luminescence flash and glow, fluorescence intensity, time-resolved fluorescence, fluorescence polarization and absorbance (UV/Visible). Absorbance measurements can be performed in the range of 240-850 nm with a speed of less than 3 min per 1536 well plate.In absorbance measurements the light is directed through a light guide to the bottom-measuring head where the intensity of the light is measured using a reference photodiode. The light is then directed through the bottom of the plate and focused into the sample. The signal is detected with a photodiode, which islocated above the plate.Multilabel DetectionPhotometric Assays with EnVision Multilabel Plate ReaderThe absorbance value is calculated by the equation A = -log(I/I o )where I o is the light intensity without any sample and I is the intensity after an absorbing or reflecting medium.MethodsDilution series of beta-NADH (Sigma-Aldrich ®, N8129) was prepared in TSA, pH 7.4 buffer. The samples were pipetted into a black and clear 1536-well plate (Greiner ®, 782096) (7.5 μL/well), 6 replicates. The plate was measured with the EnVision instrument using a photometric filter for 340 nm (PerkinElmer, 2100-5190).Dilution series of methyl-red was prepared in PBS-buffer. Samples were pipetted into a Greiner ® black and clear 1536-well plate (7.5 μL/well), 6 replicates. The plate was measured with the EnVision instrument using a photometric filter for 492 nm (PerkinElmer, 2100-5220).Dilution series of BSA was prepared into PBS buffer. Samples were pipetted into a 96-well plate (Corning ®, 3615), 200 μL/well. The plate was measured with theEnVision instrument using a photometric filter for 280 nm (PerkinElmer, 2100-5350).Label propertiesExcitation filterAbsorbance 340/492/280Number of flashes3 flashes for 340 nm 100 flashes for 492 nm and 280Number of flashes per A/D Conversion 1ConclusionIn the two examples of NADH and Methyl-red, we show that the EnVision microplate reader is ideally suited to run photometric assays. Its optical range from 240-850 nm and the wide dynamic range of 4 OD combined with its short measurement times provide maximum flexibility, sensitivity and speed.For a complete listing of our global offices, visit /ContactUs Copyright ©2002-2012, PerkinElmer, Inc. All rights reserved. PerkinElmer ® is a registered trademark of PerkinElmer, Inc. All other trademarks are the property of their respective owners. 010481_01 Aug 2012 Printed in USA PerkinElmer, Inc. 940 Winter Street Waltham, MA 02451 USA P: (800) 762-4000 or (+1) Figure 1. Beta-NADH dilution series measured with EnVision, 3 flashes/well, abs. 340 nm, 1536-well plate.Figure 2. Methyl-red dilution series measured with EnVision, 100 flashes/well, abs. 492 nm, 1536-well plate.Figure 3. BSA dilution series measured with EnVision, 100 flashes/well, abs. 280 nm, 96-well plate.。
ae滤镜中英文对照文库
3D Channel (3D通道)3D Channel Extract-------------3D通道扩展Depth Matte--------------------深厚粗糙Depth of Field-----------------深层画面Fog 3D-------------------------3D 雾化ID Matte-----------------------ID 粗糙Adjust (调整)Brightness & Contrast----------亮度与对比度Channel Mixer------------------通道混合器Color Balance------------------色彩平衡Color Stabilizer---------------色彩稳压器Curves-------------------------曲线Hue/Saturation-----------------色饱和Levels-------------------------色阶Levels (Individual Controls)---色阶 (分色RGB的控制) posterize----------------------色调分离Threshold----------------------阈值Audio (音频)Backwards----------------------向后Bass & Treble------------------低音与高音Delay--------------------------延迟Flange & Chorus----------------边缘与合唱团 *High-Low Pass------------------高音/低音Modulator----------------------调幅器Parametric EQ------------------EQ参数Reverb-------------------------回音Stereo Mixer-------------------立体声混合器Tone---------------------------音调Blur & Sharpen (模糊与锐化)Clannel Blur-------------------通道模糊Compound Blur------------------复合的模糊Directional Blur---------------方向性的模糊Fast Blur----------------------快污模糊Gaussian Blur------------------高斯模糊Radial Blur--------------------径向模糊Sharpen------------------------锐化Unsharp Mask-------------------锐化掩膜 *Channel (通道)Alpha Levels-------------------ALPHA 层通道Arithmetic---------------------运算Bland--------------------------柔化Cineon Converter---------------间距转换器Compound Arithmetic------------复合运算Invert-------------------------反向Minimax------------------------像素化Remove Color Matting-----------去除粗颗粒颜色 *Set Channels-------------------调节通道Set Matte----------------------调节粗糙度Shift Channels-----------------转换通道Distort (变型)Bezier Warp--------------------Bezier 变型Bulge--------------------------鱼眼Displacement Map---------------画面偏移Mesh Warp----------------------网状变形Mirror-------------------------镜像Offset-------------------------偏移量Optics Compensation------------光学替换 (可制作球体滚动效果) Polar Coordinates--------------极坐标Reshape------------------------重塑Ripple-------------------------涟漪Smear--------------------------涂片Spherize-----------------------球型变形Transform----------------------变换Twirl--------------------------旋转变形Wave Warp----------------------波型变形Expression Controls (表达式控制)Angle Control------------------角度控制Checkbox Control---------------复选框控制Color Control------------------颜色控制Layer Control------------------图层控制Point Control------------------锐化控制Slider Control-----------------滑块控制Image Control (图像控制)Chaner Color-------------------改变颜色Color Balance (HLS)------------色彩平衡 (HLS)Colorama-----------------------着色剂Equalize-----------------------平衡Gamma/Pedestal/Gain------------GAMMA/电平/增益Median-------------------------中线PS Arbitrary MapPS-------------任意的映射Tint---------------------------去色Keying (键控制)Color Difference Key-----------差异的色键Color Key----------------------色键Color Range--------------------色键幅度Difference Matte---------------不同粗粗糙 (以粗颗粒渐变到下一张图) Extract------------------------扩展Inner Outer Key----------------内部、外部色键Linear Color Key---------------线性色键Luma Key-----------------------LUMA键Spill Suppressor---------------溢出抑制器Matte Tools (粗糙工具)Matte Cloker-------------------粗糙窒息物 *Simple Choker------------------简单的窒息物 *Paint (油漆)Vector Paint-------------------矢量油漆Perspective (透视)Basic 3D-----------------------基本的3DBevel Alpha--------------------倾斜 ALPHABevel Edges--------------------倾斜边Drop Shadow--------------------垂直阴影Render (渲染)4-Color Gradient---------------4色倾斜度Advanced Lightning-------------高级闪电Audio Spectrum-----------------音频光谱Audio Waveform-----------------音频波形Beam---------------------------射线Cell Pattern-------------------单元模式Ellipse------------------------椭圆Fill---------------------------填充Fractal------------------------分数维Fractal Noise------------------粗糙的分数维Grid---------------------------网格Lens Flare---------------------镜头光晕Lightning----------------------闪电Radio Waves--------------------音波Ramp---------------------------斜面Stroke-------------------------笔划 (与stylize-write on功能类似) Vegas--------------------------维加斯Simulation (模拟)Particle Playground------------粒子运动场Shatter------------------------粉碎Stylize (风格化)Brush Strokes------------------笔刷Color Emboss-------------------颜色浮雕Emboss-------------------------浮雕Find Edges---------------------查找边缘Glow---------------------------照亮边缘Leave Color--------------------离开颜色Mosaic-------------------------马赛克Motion Tile--------------------运动平铺Noise--------------------------噪音Roughen Edges------------------变粗糙边Scatter------------------------分散Strobe Light-------------------匣门光 *Texturize----------------------基底凸现Write-on-----------------------在.....上写 (与render-stroke功能类似)Text (文本)Basic Text---------------------基本的文本Numbers------------------------数字文本Path Text----------------------路径文本Time (时间)Echo---------------------------回响Posterize Time-----------------发布时间Time Difference----------------时间差别 *Time Displacement--------------时间偏移Transition (转场)Block Dissolve-----------------块溶解Gradient Wipe------------------斜角转场Iris Wipe----------------------爱丽斯转场 (三角形转场)Linear Wipe--------------------线性转场Radial Wipe--------------------半径转场Venetian Blinds----------------直贡呢的遮掩 (百叶窗式转场)Video (视频)Broadcast Colors---------------广播色Reduce Interlace Flicker-------降低频闪Timecode-----------------------时间码。
EN 61853-1-2011 PV module performance testing and energy rating - Part 1
ICS 27.160
EN 61853-1
March 2011
English version
Photovoltaic (PV) module performance testing and energy rating Part 1: Irradiance and temperature performance measurements and power rating (IEC 61853-1:2011)
-2-
Foreword
The text of document 82/613/FDIS, future edition 1 of IEC 61853-1, prepared by IEC TC 82, Solar photovoltaic energy systems, was submitted to the IEC-CENELEC parallel vote and was approved by CENELEC as EN 61853-1 on 2011-03-02. Attention is drawn to the possibility that some of the elements of this document may be the subject of patent rights. CEN and CENELEC shall not be held responsible for identifying any or all such patent rights. The following dates were fixed: – latest date by which the EN has to be implemented at national level by publication of an identical national standard or by endorsement – latest date by which the national standards conflicting with the EN have to be withdrawn Annex ZA has been added by CENELEC. __________
详细 介绍石墨烯英文版
Notes Best electrical conductor of any known metal
59.6 × 106
Commonly used in electrical wire applications due to very good conductivity and price compared to silver.
Introduction
Properties of graphene
Mechanical properties
- High Young’s modulus (~1,100 Gpa) High fracture strength (125 Gpa)
- Graphene is as the strongest material
Content
Introduction to graphene. Preparation and characterization graphene Potential application of graphene Conclusions
Introduction to graphene
Graphene is a one-atom-thick planar sheet of sp2-bonded carbon atoms that are densely packed in a honeycomb crystal lattice The name ‘graphene’ comes from graphite + -ene = graphene
Molecular structure of graphene
High resolution transmission electron microscope images (TEM) of graphene
蜂蜜注册商标版权
® U.S. Registered TrademarkCopyright © 2001 Honeywell • All Rights ReservedINSTALLATION INSTRUCTIONS62-0074-1C7057Cadmium Sulfide PhotocellAPPLICATIONThe C7057 Cadmium Sulfide Photocell is used to sense ambient light levels. It is used as the sensing element for the CR7075A Lighting Controller which can provide on/off control of two separate lighting banks based on user determined ambient light intensity levels. Typical applications include outdoor cosmetic and parking lot lighting in fast food restaurants retail establishments, supermarkets, banks and lighted billboards.INSTALLATIONWhen Installing this Product...1.Read these instructions carefully. Failure to follow them could damage the product or cause a hazardous condition.2.Check the ratings given in the instructions and on the product to make sure the product is suitable for your application.3.Installer must be a trained, experienced service technician.4.After installation is complete, check out product operation as provided in these instructions.Dimensions (Fig. 1)Fig. 1. C7057 approximate dimensions in in. (mm).Before InstallationIMPORTANTExpose the photocell to light for 16 hours.The photocells develop a hysteresis (or “light memory”) when packed for shipping. Until the photocell has been exposed to bright light for at least 16 hours, light level setpoints will shift.LocationLocate the photocell sensor so that the lens is exposed to full daylight. (See Fig. 2.)NOTES:—Select an area which will not become shaded.—Mount only with light entrance facing horizontally.—Avoid overexposure to direct east/west sunlight.MountingIMPORTANTMount the photocell sensor to the top of a watertight, outdoor FS junction e the gasket provided to prevent moisture entry.2.Screw stem into 1/2-14 threaded knockout.NOTE:The photocell sensor can be mounted in a7/8 in. hole (or knockout).WiringHazard.Can shock individuals or short equipment circuitry.Disconnect power supply before installation.IMPORTANT•All wiring must agree with applicable codes, ordinances and regulations.•When wiring the input power, apply only one source of power to the CR7505A.•With line-voltage loads, the power and load voltage must be the same.Refer to chart on the inside of the controller cover or Fig. 3 for locating the power inputs, photocell sensor inputs, TOD and load relay terminals.62-0074—1 B.B. Rev. 9-01C7057 CADMIUM SULFIDE PHOTOCELLHome and Building Control Home and Building ControlHoneywellHoneywell Limited-Honeywell Limitée 1985 Douglas Drive North 35 Dynamic Drive Golden Valley, MN 55422Scarborough, Ontario M1V 4Z9Fig. 2. Vertical mounting configuration.NOTES:—The photocell sensor has no polarity.—Wire to terminal strip T2, terminals 4 and 5.—Access to terminals can be gained through standard conduit knockouts (A-E) located around the perimeter of the enclosure.—Use knockout A only for the photocell sensor and TOD wiring.—Photocell wires should be at least 18 AWG two conductor. If not run in watertight conduit, use suitable outdoor wiring insulation.—Shielded wiring is not required.OPERATION AND CHECKOUTIn the following procedures, refer to the diagram inside the CR7075A cover or Fig. 3. These show locations of all operating controls, LED lights, and wiring connection points.Initial Adjustments1.Adjust both light level potentiometers to the fully clockwise position (#1 index level).2.Place the SET-RUN switch to the RUN position.Fig. 3. Wiring for 120 Vac input; 24 Vac load.CalibrationAfter the controller and photocell sensor are installed (with wiring and settings verified), and the photocell has been exposed to light for 16 hours, apply power. The light intensity threshold levels can be calibrated when the desired outdoor light level has occurred.NOTES:—Calibration achieves best results when making adjustments at or near the lightconditions required for equipment switching.—Calibrating at extreme light conditions can cause switching to be unachievable.1.At the desired outdoor light level place SET-RUN switch to the SET position.2.Slowly rotate stage 1 light level potentiometer counterclockwise until the stage 1 LED lights.3.Stage 1 is now calibrated to the light level existing at the sensor and the stage 1 load is energized.4.Return the SET-RUN switch to the RUN position.NOTE:To calibrate stage 2, repeat this processexcept adjust the stage 2 light level potentiometer.IMPORTANTAfter initial setup is complete, make certain the switch is in the RUN position to avoid short cycling the loads.NOTE:The SET-RUN switch removes the integratingtime delay (short-cycle protection) circuitry in the SET position. In the RUN position (normal operation) the calibrated light level must be present for 30 seconds before the load switches.By using this Honeywell literature, you agree that Honeywell will have no liability for any damages arising out of your use or modification to, the literature. You will defend and indemnify Honeywell, its affiliates and subsidiaries, from and against any liability, cost, or damages, including attorneys’ fees, arising out of, or resulting from, any modification to the literature by you.。
NdYVO4激光晶体的发光性质
Photoluminescence properties of Nd:YVO 4single crystalsby multi-die EFG methodJ.W.Shura,*,V.V.Kochurikhin b ,A.E.Borisova b ,M.A.Ivanov b ,D.H.Yoona,caDepartment of Advanced Material Engineering,Sungkyunkwan University,Suwon 440-746,South KoreabGeneral Physics Institute,Vavilova st.38,Moscow 119991,Russian FederationcThe Advanced Materials and Process Research Center for IT at Sungkyunkwan University,Suwon 440-746,South KoreaReceived 24July 2003;accepted 2December 2003Available online 19March 2004AbstractNd-doped YVO 4crystal is an excellent material for making the diode-pumped solid lasers.I n this study,Nd-doped YVO 4multi-crystal with high quality was grown simultaneously by developed edge-defined film-fed growth (EFG)method.All crystals appeared homogenous Nd distribution and were found the stable step-faceting phenomena.The up-conversion properties on the Nd:YVO 4multiple-crystal have been measured by the observations of transmission and photoluminescence (PL)spectra.Ó2004Elsevier B.V.All rights reserved.Keywords:Nd-doped YVO 4multi-crystal;Edge-defined film-fed growth;Photoluminescence spectra1.IntroductionIn solid-state laser material a portion of the absorbed pump power is lost in the form of heat due to non-radiative processes.The primary mechanism is the inherent quantum defect,which arises due to the dif-ference in energy between the pump and the laser pho-ton.Moreover,cross-relaxation and up-conversion processes can also give rise to heating of the gain med-ium [1,2].Specially,in case of diode-pumped solid-state lasers where crystals with high doping concentration are used,the cross-relaxation processes are of concern due to the fluorescence quenching effect [3].Despite first diode-pumped uranium-doped laser was demonstrated in 1964[4],only the last decade made laser diode pumping,owing to advancing composite semiconductor structures,a routine design of nearby IR (1064nm)neodymium (Nd)lasers.At present time,near-infra-red Q-switched solid-state neodymium lasers (k ¼1064nm)are important devices used for variousapplications including material processing,medicine,and remote sensing [5–7].Recently,attention of investigators was moved to a comparatively novel laser Nd active medium,a Nd-doped yttrium orthovanadate (Nd:YVO 4)crystal,pos-sessing of high efficiency [8].A significant deal was paid to studies of pulsed regimes of oscillation of a Nd:YVO 4laser [9],end diode-pumped configurations of the cavity,optical phase-conjugating resonators [10,11],etc.I n spite of the mentioned advantage,a Nd:YVO 4crystal has,however,worse thermo-optical properties com-pared to traditional Nd-doped crystals like Nd:YAG and Nd:YAP [12–15].Thus,the problem of finding out optimal schemes of laser resonators and the most effective diode pumping designs become essentially ac-tual for further advancing the Nd:YVO 4lasers.Recently,edge-defined film-fed growth (EFG)paid attention as a way to attain high quality rare-earth vanadate single crystals [16,17].The EFG method has a possibility to minimize the melt overheating,and to prevent the creation of phases with a vanadium valency state.Moreover,using this method it is possible to grow few vanadate items simultaneously.In this study,the modified EFG technique was used for the simultaneous growth of two crystals.Dopant*Corresponding author.Tel.:+82-31-290-7361;fax:+82-31-290-7371.E-mail addresses:dhyoon@,dhyoon@skku.ac.kr (J.W.Shur).0925-3467/$-see front matter Ó2004Elsevier B.V.All rights reserved.doi:10.1016/j.optmat.2003.12.018Optical Materials 26(2004)347–350/locate/optmatconcentrations of the grown crystals were measured by using electron probe micro-analysis(EPMA,JXA-8900R).The transmission peaks and photoluminescence (PL)properties were measured using a UV/VIS/NIR spectrophotometer,laser Raman and photolumines-cence spectrometer(SPEX1403).2.ExperimentalThe3at%of Nd3þions doped YVO4single crystal was grown by multi-die EFG method.Simultaneous growth of Nd:YVO4single crystals by the multi-die EFG method have some additional advantages for application.t is following as:the stress would be less and obtaining several single crystals with high quality per once experiment would be possible[18].Starting materials the Nd2O3,Y2O3and V2O5pow-ders were prepared to the stoichiometric composition by mixing.Doped materials were prepared by mixing the raw materials with1at%of Nd2O3.All crystals were grown using YVO4seed along the c-axis.Pulling rates was2mm/h for the growth of Nd-doped YVO4multi-crystals and growth atmosphere was a mixture of99 vol%N2+1vol%O2.The grown crystals received the heat treatment at1300°C during24h.Dopant concentrations of grown crystals were mea-sured by using EPMA(JXA-8900R)on planes parallel to the growth axis.All test samples for PL properties were cut and polished from grown single crystals. Absorption was investigated by using UV/VIS/NIRspectrophotometer(Hitachi)at room temperature.R928 PMT and PBS in detector were used in UV-VIS range and N I R,respectively.PL spectra were measured by using laser Raman and photoluminescence spectrometer (SPEX1403)and PL measurement divided into three wavelength ranges.Fig.1was shown a schematic dia-gram of PL measurement and the experimental condi-tion of PL measurement was shown Table1.3.Results and discussionThe YVO4single crystal from the melt with addition of3at%of Nd3þions was successfully grown along the c-axis by multi-die EFG method.Fig.2was shown the grown single crystals.The grown crystals were trans-parent,slightly blue in color,and free of crack.Minor black inclusions were observed on the surface of the grown crystals but disappeared after annealing in air. These crystals,grown by multi-die EFG method,were cut only c-axis.So the stress inside the crystal body much decreased.And multi-die EFG technique would be eco-nomical against other crystal growth technique because several single crystals per once experiment were gotten.Fig.3shows the distribution of Nd3þions along the grown c-axis in the simultaneous grown crystals.As a result of measurement with EPMA,the concentration of Nd3þions were almost identical to the initial melt composition and was observed homogeneous distribu-tion along the c-axis.Also,the estimated segregation coefficients of grown crystal were0.390(part1)and 0.402(part2),respectively.Fig.2.Nd3þions doped YVO4single crystal grown by multi-die EFG method.Table1Experimental condition of PL measurementa b cWavelength range850–900nm1050–1100nm1330–1380nmDouble monochromator(focal length:0.85m resolution:0.004nm)1800G/mm,500nm blaze1200G/mm,1000nm blaze600G/mm,1600nm blaze Light source He–Cd laser(325nm)He–Cd laser(325nm)He–Cd laser(325nm) 348J.W.Shur et al./Optical Materials26(2004)347–350The optical properties according to Nd 3þions con-centration in YVO 4were measured by laser system that the source was non-polarized light.The incident light inputted toward the growth direction.The transmission spectrum of 1at%Nd 3þions doped YVO 4multi-crystal was shown in Fig.4.The transmission ranges were 530–540,590–600,755–765,805–825and 885–900nm in the crystal and the Nd 3þions in host material had transition to 2G 7=2,4G 5=2,4F 7=2,4F 5=2and 4F 3=2energy level.From this result,the energy level of the YVO 4single crystal were varied by addition of Nd 3þions.Fig.5was shown PL spectrum of Nd:YVO 4single crystals.The double spectrometer technique was used to measure the PL properties and was performed at room temperature,using an Ar-ion laser as an excitation source.The Nd 3þions were primary moved from 4I 9=2toupper energy level and they dropped to the meta-stable state.For the stabilization,Nd 3þions have transitions to 2F 7=2!4I 11=2and 4F 3=2!4I 11=2with emitted wave-lengths around 880,1060and 1340nm,separately.Fig.5(a)was shown PL spectrum in the range of 850–900nm.The strongest peak of intensity was discovered in the wavelength range around 880nm.This peak aroundJ.W.Shur et al./Optical Materials 26(2004)347–350349880nm was due to the4F3=2!4I9=2transition.Likewise, Fig.5(b)and(c)were shown PL spectrum in the range of 1050–1100and1330–1380nm.The strongest peaks of intensities were discovered in the wavelength around 1065and1340nm,respectively.The peak around1065 nm was due to the4F3=2!4I11=2transition and the peak around1340nm was due to the4F3=2!4I13=2transition, separately.4.ConclusionNd-doped YVO4single crystals were successfully grown by muti-die EFG method.The grown crystal was high quality such as crack-free,no inclusion,no gas bubble and colors of transparent blue.Concentrations of Nd3þions inside single crystals along the growth direc-tion were homogeneous.Nd:YVO4single crystal had absorption range of530–540,590–600,755–765,805–825 and885–900nm.The PL spectrum of grown crystalfibers were measured in the range of800–900,1000–1100and 1300–1400nm.The strong peaks of intensities were dis-covered in the wavelength around880,1060and1340nm, respectively.These peaks were due to the4F3=2!4I9=2, 4F3=2!4I11=2and4F3=2!4I13=2transition,separately. AcknowledgementsThis work was supported by the Advanced Materials and Process Research Center for IT at Sungkyunkwan University.References[1]W.Koechner,Solid-State Laser Engineering,4th ed.,Springer,Berlin,1992,p.381.[2]asky,B.D.Moran,G.F.Albrecht,R.J.Beach,J.QuantumElectron31(1995)1261.[3]J.G.Sliney,K.M.Leung,M.Birnbaum,A.W.Tucker,J.Appl.Phys.50(1979)3778.[4]R.J.Keyes,T.M.Quist,Appl.Phys.Lett.4(1964)50.[5]i,M.Brunel,F.Bretenaker,A.Le Floch,Appl.Phys.Lett.9(2001)1073.[6]M.Fromager,K.Ait Ameur,mun.191(2001)305.[7]N.N.Arev, B.F.Gorbunov,G.V.Pugachev,Meas.Tech.36(1993)524.[8]R.A.Fields,M.Birnbaum,C.L.Fincher,Appl.Phys.Lett.51(1987)1885.[9]A.Agnesi,C.Pennacchio,G.C.Reali,V.Kubecek,Opt.Lett.22(1997)1645.[10]J.J.Soto-Bernal,E.Rosas,V.Pinto,V.Aboites,M.J.Damzen,mun.184(2000)201.[11]A.Brignon,L.Loiseau,rat,J.P.Huignard,J.P.Pocholle,Appl.Phys.69(1999)159.[12]Q.Pan,T.Zhang,Y.Zhang,R.Li,K.Peng,Z.Yu,Q.Lu,,Appl.Opt.37(1998)2394.[13]S.A.Payne,G.D.Wilke,L.K.Smith,W.F.Krupke,Opt.Commun.111(1994)263.[14]D.L.Sipes,Appl.Phys.Lett.47(1985)74.[15]B.Zhou,T.J.Kane,G.J.Dixon,R.L.Byer,Opt.Lett.10(1985)62.[16]V.V.Kochurikhin,M.A.Ivanov,W.S.Yang,S.J.Suh, D.H.Yoon,J.Cryst.Growth229(2001)179.[17]B.M.Epelbaum,K.Shimamura,K.I naba,S.Uda,V.V.Kochurikhin,H.Mashida,Y.Terada,T.Fukuda,Cryst.Res.Technol.34(1999)301.[18]V.V.Kochurikhin,A.E.Borisova,M.A.Ivanov,V.E.Shukshin,hakov,S.J.Suh,D.H.Yoon,J.Ceram.Proc.Res.4(2003) 109.350J.W.Shur et al./Optical Materials26(2004)347–350。
【透明】photoshop中英文对照和技巧
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Matte<移去黑色杂边><3> Remove White Matte<移去白色杂边>五、Selection<选择>1.All<全部>2.Deselect<取消选择>3.Reselect<重新选择>4.Inverse<反选>5.Color Range<色彩范围>6.Feather<羽化>7.Modify<修改><1> Border<扩边><2> Smooth<平滑><3> Expand<扩展><4> Contract<收缩>8.Grow<扩大选区>9.Similar<选区相似>10.Transform Selection<变换选区>11.Load Selection<载入选区>12.Save Selection<存储选区>六、Filter<滤镜>st Filter<上次滤镜操作>2.Artistic<艺术效果><1> Colored Pencil<彩色铅笔><2> Cutout<剪贴画><3> Dry Brush<干笔画><4> Film Grain<胶片颗粒><5> Fresco<壁画><6> Neon Glow<霓虹灯光><7> Paint Daubs<涂抹棒><8> Palette Knife<调色刀><9> Plastic Wrap<塑料包装><10> Poster Edges<海报边缘><11> Rough Pastels<粗糙彩笔><12> Smudge Stick<绘画涂抹><13> Sponge<海绵><14> Underpainting<底纹效果><15> Watercolor<水彩>3.Blur<模糊><1> Blur<模糊><2> Blur More<进一步模糊><3> Gaussian Blur<高斯模糊><4> Motion Blur<动态模糊><5> Radial Blur<径向模糊><6> Smart Blur<特殊模糊>4.Brush Strokes<画笔描边><1> Accented Edges<强化边缘><2> Angled Stroke<成角的线条><3> Crosshatch<阴影线><4> Dark Strokes<深色线条><5> Ink Outlines<油墨概况><6> Spatter<喷笔><7> Sprayed Strokes<喷色线条><8> Sumi 5.Distort<扭曲><1> Diffuse Glow<扩散亮光><2> Displace<置换><3> Glass<玻璃><4> Ocean Ripple<海洋波纹><5> Pinch<挤压><6> Polar Coordinates<极坐标><7> Ripple<波纹><8> Shear<切变><9> Spherize<球面化><10> Twirl<旋转扭曲><11> Wave<波浪><12> Zigzag<水波>6.Noise<杂色><1> Add Noise<加入杂色><2> Despeckle<去斑><3> Dust & Scratches<蒙尘与划痕><4> Median<中间值>7.Pixelate<像素化><1> Color Halftone<彩色半调><2> Crystallize<晶格化><3> Facet<彩块化><4> Fragment<碎片><5> Mezzotint<铜版雕刻><6> Mosaic<马赛克><7> Pointillize<点状化>8.Render<渲染><1> 3D Transform<3D 变换><2> Clouds<云彩><3> Difference Clouds<分层云彩><4> Lens Flare<镜头光晕><5> Lighting Effects<光照效果><6> Texture Fill<纹理填充>9.Sharpen<锐化><1> Sharpen<锐化><2> Sharpen Edges<锐化边缘><3> Sharpen More<进一步锐化><4> Unsharp Mask10.Sketch<素描><1> Bas Relief<基底凸现><2> Chalk & Charcoal<粉笔和炭笔><3> Charcoal<3> Chrome<铬黄><4> Conte Crayon<彩色粉笔><5> Graphic Pen<绘图笔><6> Halftone Pattern<半色调图案><7> Note Paper<便条纸><8> Photocopy<副本><9> Plaster<塑料效果><10> Reticulation<网状><11> Stamp<图章><12> Torn Edges<撕边><13> Water Paper<水彩纸>11.Stylize<风格化><1> Diffuse<扩散><2> Emboss<浮雕><3> Extrude<突出><4> Find Edges<查找边缘><5> Glowing Edges<照亮边缘><6> Solarize<曝光过度><7> Tiles<拼贴><8> Trace Contour<等高线><9> Wind<风>12.Texture<<纹理><1> Craquelure<龟裂缝><2> Grain<颗粒><3> Mosained Tiles<马赛克拼贴><4> Patchwork<拼缀图><5> Stained Glass<染色玻璃><6> Texturixer<纹理化>13.Video<视频><1> De <2> NTSC Colors14.Other<其它><1> Custom<自定义><2> High Pass<高反差保留><3> Maximum<最大值><4> Minimum<最小值><5> Offset<位移>15.Digimarc<1>Embed Watermark<嵌入水印><2>Read Watermark<读取水印>七、View<视图>1.New View<新视图>2.Proof Setup<校样设置><1>Custom<自定><2>Working CMYK<处理CMYK><3>Working Cyan Plate<处理青版><4>Working Magenta Plate<处理洋红版><5>Working Yellow Plate<处理黄版><6>Working Black Plate<处理黑版><7>Working CMY Plate<处理CMY版><8>Macintosh RGB<9>Windows RGB<10>Monitor RGB<显示器RGB><11>Simulate Paper White<模拟纸白><12>Simulate Ink Black<模拟墨黑>3.Proof Color<校样颜色>4.Gamut Wiring<色域警告>5.Zoom In<放大>6.Zoom Out<缩小>7.Fit on Screen<满画布显示>8.Actual Pixels<实际象素>9.Print Size<打印尺寸>10.Show Extras<显示额外的>11.Show<显示><1> Selection Edges<选区边缘><2> Target Path<目标路径><3> Grid<网格><4> Guides<参考线><5> Slices<切片><6> Notes<注释><7> All<全部><8> None<无><9>Show Extras Options<显示额外选项>12.Show Rulers<显示标尺>13.Snap<对齐>14.Snap To<对齐到><1> Guides<参考线><2> Grid<网格><3> Slices<切片><4> Document Bounds<文档边界><5> All<全部><6> None<无>15.Show Guides<锁定参考线>16.Clear Guides<清除参考线>17.New Guides<新参考线>18.Lock Slices<锁定切片>19.Clear Slices<清除切片>八、Windows<窗口>1.Cascade<层叠>2.Tile<拼贴>3.Arrange Icons<排列图标>4.Close All<关闭全部>5.Show/Hide Tools<显示/隐藏工具>6.Show/Hide Options<显示/隐藏选项>7.Show/Hide Navigator<显示/隐藏导航>8.Show/Hide Info<显示/隐藏信息>9.Show/Hide Color<显示/隐藏颜色>10.Show/Hide Swatches<显示/隐藏色板>11.Show/Hide Styles<显示/隐藏样式>12.Show/Hide History<显示/隐藏历史记录>13.Show/Hide Actions<显示/隐藏动作>14.Show/Hide Layers<显示/隐藏图层>15.Show/Hide Channels<显示/隐藏通道>16.Show/Hide Paths<显示/隐藏路径>17.Show/Hide Character<显示/隐藏字符>18.Show/Hide Paragraph<显示/隐藏段落>19.Show/Hide Status Bar<显示/隐藏状态栏>20.Reset Palette Locations<复位调板位置>按Shift+“+”键( 向前 )和Shift+“-”键( 向后 )可在各种层的合成模式上切换。
光谱仪器原理
Spectrographys are optical instruments that form images S2(λ) of the entrance slit S1;the images are laterally separated for different wavelengths λof the incident radiation.Ω=F/f12受棱镜的有效面积F=h.a的限制,它代表光的限制孔径.的方式成像到入射狭缝上是有利的,虽然会聚透镜可以缩小光源在入射狭经上所成的像,使更多的来自扩展光源的辐射功率通过入射狭缝:但是发散度增大了.在接收角外的辐射不能被探测到,反而增大了由透镜支架和分光计任何色散型仪器的光谱分辨本领的定义为和λ2间的最小间隔.-λ2)在二个最大间显示出明显的凹陷,则可以认为强度分布是由具有强度轮廓为I1(λ-λ1)和I21(λ-λ2)的二条)依赖于比率I1/I2和二个分量的轮廓,因此最小对于不同的轮廓将是不相同.2的第一最小重合,则认为两条谱线如果强度相等的两条线的两个最大间的凹陷降到I的(8/π2)≈0.8,(a)Diffraction in a spectrometer by the limiting aperture with diameter af1f2:angular dispersion[rad/nm]成像在平面B上)间的距离△x2为=(dx/dλ)△λ:linear dispersion of the instrument,[mm/nm]为了分辨λ和λ+△λ的二条线,上式中的间距△x2至少应为二个狭缝象的宽度(λ)+δx2(λ+△λ),由于宽度x2由下式与入射狭缝宽度相联系:δx2=(f2/f1) δx1所以减小δx1便能增大分辨本领λ/△λ,可惜存在着由衍射造成的理论极限.由于分辨极限十分重要.我们将对这点作更详细的讨论.(b)Limitation of spectral resolution by diffraction=±λ/b间(见图);仅当2 δΦ小于分光计的接收角a/f1时,它才能完全通过限制孔径a.这给出入射狭缝有效宽度bmin的下限为在一切实际情形中,入射光都是发散的.这就要求发散角和衍射角之和必须小于,而最小狭缝相应地更大。
通过透射谱中的干涉条纹计算薄膜折射率厚度光学带隙的方法
其中s是透明衬底的折射率,对一般用的载波片为1.52。或者用公式计算出来
Ts透射谱中薄膜和衬底对光都无吸收时的透射率。
用以上二个公式可以计算弱吸收区和中等强度吸收区中任一波长处的折射率,
测量薄膜时只关心波峰和波谷处的值。
Page 7
薄膜厚度的计算方法 利用相邻波峰或波谷处的折射率及波长,可粗略地计算
薄膜厚度。
也可以利用以上计算的薄膜厚度,再根据干涉公式
先给出干涉级数m,再重新计算薄膜厚度,这样给出的 薄膜厚度误差小于1%。
Page 8
光学带隙的计算方法(一)
利用公式给出吸收系数谱 ln(1/T)=d
其中 T:透射率 d:薄膜厚度 :吸收系数
从曲线上读取吸收系数为5×104cm-1的点所对应的波长 计算对应的Eg5,4=1.24/ (的单位用微米)
薄膜沉积于玻璃衬底上,结构如下
符号的简单说明 d=film thickness n=n-ik n = complex refractive index n = refractive index k= extinction coefficient
Page 1
典型的透射谱
条纹是干涉形成的,利用它可以计算薄膜厚度。根据透射 谱计算出吸收系数,可得到光学带隙。从透射谱的包络线 可以计算任一波长处的折射率。
点击包络线,从出来的 对话框中选择go to base1,形成包络线的数 据文件,将其另存为一 个新的数据表。
上下包络线需要分别做 并产生二个对应的数据 文件。
Page 4
如何将上下二条包络线与透射谱合成在一个图中
先画出透射谱图 激活一个包络线的数据列表,选中二列数据,将鼠标点在列最右侧合
Page 2
ND filter
Neutral density filterFrom Wikipedia, the free encyclopediaDemonstration of the effect of a neutral density filterIn photography and optics, a neutral density filter or ND filter is a filter that reduces or modifies the intensity of all wavelengths or colors of light equally, giving no changesin hue of color rendition. It can be a colorless (clear) or grey filter. The purpose of astandard photographic neutral-density filter is to reduce the amount of light entering the lens. Doing so allows the photographer to select combinations of aperture, exposure time and sensor sensitivity which would otherwise produce overexposed pictures. This is done to achieve effects such as a shallower depth of field and/or motion blur of a subject in a wider range of situations and atmospheric conditions.For example, one might wish to photograph a waterfall at a slow shutter speed to create a deliberate motion blur effect. The photographer might determine that to obtain the desired effect a shutter speed of ten seconds was needed. On a very bright day, there might be so much light that even at minimum film speed and a minimum aperture, the ten-second shutter speed would let in too much light and the photo would be overexposed. In this situation, applying an appropriate neutral-density filter is the equivalent of stopping down one or more additional stops, allowing for the slower shutter speed and the desiredmotion-blur effect.Contents[hide]∙ 1 Mechanism∙ 2 Uses∙ 3 Varietieso 3.1 Specialist neutral density filters▪ 3.1.1 Variable neutral density filter▪ 3.1.2 Extreme ND filters∙ 4 ND filter ratings∙ 5 See also∙ 6 References∙7 External linksMechanism[edit]For an ND filter with optical density d the amount of optical power transmitted through the filter, which can be calculated from the logarithm of the ratio of the measurable intensity (I) after the filter to the incident intensity (I0),[1] shown as the following:Fractional Transmittance (I⁄I0) = 10-d, orUses[edit]Comparison of two pictures showing the result of using a ND-filter at a landscape. The first one usesonly a polarizer and the second one a polarizer and a 1000x ND-Filter (ND3.0), which allowed thesecond shot to have a much longer exposure, smoothing any motion.The use of an ND filter allows the photographer to use a larger aperture that is at or below the diffraction limit, which varies depending on the size of the sensorymedium (film or digital) and for many cameras, is between f/8 and f/11, withsmaller sensory medium sizes needing larger-sized apertures, and larger onesable to use smaller apertures. ND filters can also be used to reduce the depth offield of an image (by allowing the use of a larger aperture) where otherwise notpossible due to a maximum shutter speed limit.Instead of reducing the aperture to limit light, the photographer can add a ND filter to limit light, and can then set the shutter speed according to the particular motion desired (blur of water movement, for example) and the aperture set as needed(small aperture for maximum sharpness or large aperture for narrow depth of field (subject in focus and background out of focus)). Using a digital camera, thephotographer can see the image right away, and can choose the best ND filter to use for the scene being captured by first knowing the best aperture to use for maximum sharpness desired. The shutter speed would be selected by finding the desired blur from subject movement. The camera would be set up for these in manual mode, and then the overall exposure then adjusted darker by adjusting either aperture or shutter speed, noting the number of stops needed to bring the exposure to that which is desired. That offset would then be the amount of stop needed in the ND filter to use for that scene.Neutral density filters are often used to achieve motion blur effects with slow shutter speeds Examples of this use include:∙Blurring water motion (e.g. waterfalls, rivers, oceans).∙Reducing depth of field in very bright light (e.g. daylight).∙When using a flash on a camera with a focal-plane shutter, exposure time is limited to the maximum speed—often 1/250th of a second, at best—at which the entire film or sensor is exposed to light at one instant. Without an ND filter this can result in the need to use f8 or higher.∙Using a wider aperture to stay below the diffraction limit.∙Reduce the visibility of moving objects∙Add motion blur to subjects∙Extended time exposuresNeutral density filters are used to control exposure with photographic catadioptric lenses, since the use of a traditional iris diaphragm increases the ratio of the central obstruction found in those systems leading to poor performance.ND filters find applications in several high-precision laser experiments because the power of a laser cannot be adjusted without changing other properties of the laser light (e.g. collimation of the beam). Moreover, most lasers have a minimum power setting at which they can be operated. To achieve the desired light attenuation, one or more neutral density filters can be placed in the path of the beam.Large telescopes can cause the moon and planets to become too bright and lose contrast. A neutral density filter can increase the contrast and cut down the brightness, making the moon easier to view.Varieties[edit]A graduated ND filter is similar except the intensity varies across the surface of the filter. This is useful when one region of the image is bright and the rest is not, as in a picture of a sunset.The transition area, or edge, is available in different variations (soft, hard, attenuator). The most common is a soft edge and provides a smooth transition from the ND side and the clear side. Hard edge grads have a sharp transition from ND to clear and the attenuator edge changes gradually over most of the filter so the transition is less noticeable.Another type of ND filter configuration is the ND Filter-wheel. It consists of two perforated glass disks which have progressively denser coating applied around the perforation on the face of each disk. When the two disks are counter-rotated in front of each other they gradually and evenly go from 100% transmission to 0% transmission. These are used on catadioptric telescopes mentioned above and in any system that is required to work at 100% of its aperture (usually because the system is required to work at its maximum angular resolution).Practical ND filters are not perfect, as they do not reduce the intensity of all wavelengths equally. This can sometimes create color casts in recorded images, particularly with inexpensive filters. More significantly, most ND filters are only specified over the visible region of the spectrum, and do not proportionally block all wavelengths of ultraviolet or infrared radiation. This can be dangerous if using ND filters to view sources (such as the sun or white-hot metal or glass) which emit intense non-visible radiation, since the eye may be damaged even though the source does not look bright when viewed through the filter. Special filters must be used if such sources are to be safely viewed.An inexpensive, homemade alternative to professional ND filters can be made from a piece of welder's glass. Depending on the rating of the welder's glass, this can have the effect of a 10-stop filter.Specialist neutral density filters[edit]The two most common are the variable ND filters and the extreme ND filters such as the Lee Big Stopper.Variable neutral density filter[edit]The main disadvantage of neutral density filters is that to be entirely flexible in your shooting you need to carry a range of different NDs. This can become an expensive proposition, especially if using screw filters with different lens filter sizes which would require carrying a set for each diameter of lens carried. To counter this some manufacturers have created variable ND filters. These work by placing two polarizing filters together at least one of which can rotate. The rear polarizing filter cuts out light in one plane. As the front element is rotated, it cuts out an increasing amount of the remaining light the closer the front filters comesto being perpendicular to the rear filter. By using this technique the amount of light reaching the sensor can be varied with almost infinite control.The advantages to this are that you get multiple ND filters in one package, the disadvantage is a loss of image quality caused by both using two elements together and by combining two polarizing filters.Extreme ND filters[edit]To create ethereal looking landscapes and seascapes with extremely blurred water, or other motion, has needed the use of multiple stacked ND filters. This had, as in the case of variable NDs, the effect of reducing image quality. To counter this, some manufacturers have produced high-quality, extreme ND filters. Typically these are rated at a 10-stop reduction, allowing for very slow shutter speeds even in relatively bright conditions.ND filter ratings[edit]In photography, ND filters are quantified by their optical density or equivalently their f-stop reduction. In microscopy, the transmittance value is sometimes used. In astronomy, the Fractional Transmittance is sometimes used (eclipses).ND1num ber Notation ND.numberNotationNDnumberNotationLensareaopening, asfraction ofthecompletelensOpticaldensityf-stopreduction%transmittanceFractionalTransmittance1 0.0 0 100 % 1ND 101ND 0.3ND21/2 0.3 1 50% 0.5 ND 102ND 0.6ND41/4 0.6 2 25 % 0.25 ND 103ND 0.9ND81/8 0.9 3 12.5% 0.125ND 104ND 1.2ND161/16 1.2 4 6.25 % 0.0625 ND 105ND 1.5ND321/32 1.5 5 3.125% 0.03125 ND 106ND 1.8ND641/64 1.8 6 1.563 % 0.015625 ND 2.0ND1001/100 2.0 6 2/3 1% 0.01ND 107ND 2.1ND1281/128 2.1 7 0.781% 0.0078125 ND 108ND 2.4ND2561/256 2.4 8 0.391% 0.00390625ND4001/400 2.6 8 2/3 0.25% 0.0025 ND 109ND 2.7ND5121/512 2.7 9 0.195% 0.001953125ND 110ND 3.0ND1024 (alsocalled ND1000)1/1024 3.0 10 0.098% 0.0009765625ND 111ND 3.3ND20481/2048 3.3 11 0.049% 0.00048828125ND 112ND 3.6ND40961/4096 3.6 12 0.024% 0.000244140625ND 3.8ND63101/6310 3.8 12 2/3 0.016% 0.000158489319246ND 113ND 3.9ND81921/8192 3.9 13 0.012% 0.0001220703125Note: Hoya, B+W, Cokin use code ND2 or ND2x, etc; Lee, Tiffen use code 0.3ND, etc; Leica uses code 1x, 4x, 8x, etc[2]Note: ND 3.8 is the correct value for solar CCD exposure without risk of electronic damage.Note: ND 5.0 is the minimum for direct eye solar observation without damage of retina. A further check must be performed for the particular filter used, checking on the spectrogram that also UV and IR are mitigated with the same value.See also[edit]Graduated neutral density filterReferences[edit]1. Jump up^ Hanke, Rudolph (1979). Filter-Faszination (in German). Monheim/Bayern.pp. 70 ff. ISBN3-88324-991-2.2. Jump up^"CAMERA LENS FILTERS". Retrieved June 12, 2014.。
Photoshop的图层混合模式(中英文对照)
Photoshop的图层混合模式(中英文对照)normal 正常dissolve 渐隐-------------------------------------------------------- darken 变暗Mutiply 正片叠底color burn 颜色加深linear burn 线性加深-------------------------------------------------------- lighten 变亮screen 滤色color dodge 颜色变淡linear dodge 线性减淡-------------------------------------------------------- overlay 叠加soft light 柔光hard light 强光vivid light 亮光linear light 线性光pin light 点光hard mix 实色混合-------------------------------------------------------- difference 插值exclusion 排除-------------------------------------------------------- hue 色调saturation 饱和度-------------------------------------------------------- color 颜色luminosity 亮度1. 正常(Normal)模式在“正常”模式下,“混合色”的显示与不透明度的设置有关。
当“不透明度”为100%,也就是说完全不透明时,“结果色”的像素将完全由所用的“混合色”代替;当“不透明度”小于100%时,混合色的像素会透过所用的颜色显示出来,显示的程度取决于不透明度的设置与“基色”的颜色。
如果在处理“位图”颜色模式图像或“索引颜色”颜色模式图像时,“正常”模式就改称为“阈值”模式了,不过功能是一样的。
Photoshop 关键目录和滤镜的中英文对照表及其对应文件扩展名
Photoshop 关键目录和滤镜的中英文对照表及其对应文件扩展名自CS4 开始的简体中文版,其安装目录的文件夹名就不在是中文的了(网上有部分CS3 版本是英文目录的,估计有可能是英文+ 汉化版包改的)。
所以自制一份中英文表格,分别对应了各自文件的扩展名,如果想精简汉化或者制作PHOTOSHOP 迷你版,以及重装系统后,想备份数据的朋友可以看看。
为个人翻译,这部分找不到对应的中文,可能有错,如有问题请留言,我会及时修正。
PS 的关键目录——Presets 预置Actions Photoshop 动作.atnBlack and White 黑白.blwBrushes 画笔.abrChannel Mixer 通道混合器.chaColor Books色标簿.acbColor Swatches 色板.acoContours 等高线.shcCurves 曲线.acvCustom Shapes 自定形状.cshDuotones 双色调.ADOExposure 曝光?.eap CS4 新增目录Gradients 渐变.grdHDR Toning HDR 色调?.hdt CS5 新增目录Hue and Saturation 色相和饱和度? .ahu CS4 新增目录Levels 色阶?.alv CS4 新增目录Lights 光源?.p3l CS4 新增目录Materials 材质?.p3m CS4 新增目录Meshes网格?.dae CS4 新增目录Optimized Colors优化后颜色.actOptimized Output优化后输出设置.irosSettingsOptimized Settings优化后设置.irsPatterns 图案.patRender Settings 渲染设置?.p3r CS4 新增目录Repousse 凸纹?.p3e CS5 新增目录Scripts 脚本.jsxStyles 样式.aslTools 工具.tpl 工具预设V olumes 卷标?.p3r CS4 新增目录Widgets 小工具?.dae CS4 新增目录ZoomView ZoomView .zvtZoomView 模板(官方没翻)工作区CS2 新增,CS4 消失,无扩展名。
AE滤镜中英文对照表
AE滤镜中英文对照表3D Channel三维通道特效--3d chanel extract 提取三维通道--depth matte深度蒙版--depth of field场深度--fog 3D雾化--ID Matte ID蒙版Audio音频特效--backwards倒播--bass & treble低音和高音--delay延迟--flange & chorus变调和合声--high-low pass高低音过滤--modulator调节器--parametric EQ EQ参数--reverb回声--stero mixer 立体声混合--tone音质Blur & Sharpen模糊与锐化特效--box blur方块模糊--channel blur通道模糊--compound blur混合模糊--directional blur方向模糊--fast blur快速模糊--gaussuan blur高斯模糊--lens blur镜头虚化模糊--radial blur径向模糊--reduce interlace flicker降低交错闪烁--sharpen锐化--smart blur智能模糊--unshart mask反遮罩锐化Channel通道特效--alpha levels Alpha色阶--arithmetic通道运算--blend混合--calculations融合计算--channel combiner复合计算--invert反相--minimax扩亮扩暗--remove color matting删除蒙版颜色--set channels设置通道--set matte设置蒙版--shift channels转换通道--solid composite实体色融合Color correction 颜色校正特效--auto color自动色彩调整--auto contrast自动对比度--auto levels自动色阶--brightness & contrast亮度核对比度--broadcast colors播放色--change color转换色彩--change to color颜色替换--channel mixer通道混合--color balance色彩平衡--color blance(HIS)色彩平衡(HIS)--color link色彩连接--color stabilizer色彩平衡器--colorama彩光--curves曲线调整--equalize均衡效果--exposure多次曝光--gamma/pedestal/gain伽马/基色/增益--hue/saturation色相/饱和度--leave color退色--levels (individual controls)色阶(个体控制) --photo filter照片过滤--PS arbitrary Map映像遮罩--shadow/highlight阴影/高光--tint色度--tritone三阶色调整Distort扭曲特效--bezier warp贝赛尔曲线弯曲--bulge凹凸镜--corner pin边角定位--displacement map置换这招--liquify像素溶解变换--magnify像素无损放大--mesh warp液态变形--mirror镜像--offset位移--optics compensation镜头变形--polar coordinates极坐标转换--puppet木偶工具--reshape形容--ripple波纹--smear涂抹--spherize球面化--transform变换--turbulent displace变形置换--twirl扭转--warp歪曲边框--wave warp波浪变形Expression Controls表达式控制特效--angel control角度控制--checkbox control检验盒控制--color control色彩控制--layer control层控制--point control点控制--slider control游标控制Generate 渲染(RENDER)--4-ccolor gradient四角渐变--advanced lightning高级闪电--audio spectrum声谱--audio waveform声波--beam声波--beam光束--cell pattern单元图案--checkerboard棋盘格式--circle圆环--ellipse椭圆--eyedropper fill滴管填充--fill填充--fractal万花筒--grid网格--lens flare镜头光晕--lightning闪电--paint bucker颜料桶--radio waves电波--ramp渐变--scribble涂抹--stroke描边--vegas勾画--write-on手写效果Keying 抠像特效--color difference key色彩差抠像--color key色彩抠像--color range色彩范围--difference matte差异蒙版--extract提取--inner/outer key轮廓抠像--linear color key线性色彩抠像--luma key亮度抠像--spill suppressor溢色抑制Matte 蒙版特效--matte choker蒙版清除--simple choker简单清除 Noise & Grain 噪波和杂点特效--add grain添加杂点--dust & scratches杂点和划痕--fractal noise不规则噪波--match grain杂点匹配--median中性--noise杂点--noise alpha alpha通道杂点--noise HLS HLS通道杂点--noise HLS auto自动生成HLS通道杂点--remove grain减弱杂点Paint 绘画--paint绘画工具--vector paint矢量绘画perspective 透视特效--3D glasses立体眼镜--basic 3D基础三维--bevel Alpha Alpha导角--vevel edges边缘导角--drop shadow投影--radial shadow放射状的投影simulation 仿真特效--card dance碎片飘移--caustics焦散--foam泡沫--particle playground粒子--shatter爆碎--wave world波纹抖动stylize 风格化特效--brush storkes画笔描边--color emboss彩色浮雕--emboss浮雕--find edges查找边缘--glow自发光--mosaic马赛克--motion tile运动拼贴--posterize多色调分离--roughen edges粗糙边缘--scatter扩散--strobe light闪光灯--texturize纹理化--threshold对比度极限text 文字特效--basic text基本文字--numbers数字--path text路径文字--timecode时间码time 时间特效--echo重影--psterize time招贴画--time difference时间差异--time displacement时间置换--timewarp时间收缩transition 转换特效--block dissolve快面溶解--card wipe卡片擦除--gradient wipe渐变擦拭--iris wipe星形擦拭--linear wipe线性擦拭--radial wipe径向擦拭--venetian blinds百叶窗utlity 实用特效--cineon converter Cineon转换--color profile converter色彩特性描述转换--grow bounds范围增长--HDR compander HDR压缩扩展--HDR Highlight compression HDR高光压缩。
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Supporting InformationPHOTOLUMINESCENCE PROPERTIES OF NA1.45LA8.55(SIO4)6(F0.9O1.1): EU FOR APPLICATIONS AS A REDDISH ORANGE PHOSPHORQUN SHI*,†, DHIA A. HASSAN*,‡ and RENJIE ZENG*,§,¶*Department of Materials Science and EngineeringXiamen University, Xiamen 361005, P. R. China†Fujian Key Laboratory of Advanced MaterialsXiamen University, Xiamen 361005, P. R. China§RJZeng@¶Corresponding authors.12The crystal structure of Na1.45La8.55(SiO4)6(F0.9O1.1), shown in Fig. S1, was determined to be a monoclinic system [space group p (1121)] with lattice constants a= 9.678, b= 9.682, c= 7.1631, a= b= 90, g= 120.04, V= 581.04, and Z= 1 (JCPDS card No. 79–2417). There are four different sites for Eu incorporation in a Na1.45La8.55(SiO4)6(F0.9O1.1) host. Although Eu ions have slightly smaller ionic radii than La ions (0.107 nm, CN = 8 versus 0.118 nm, CN = 8, respectively), the Eu ions substitute with La sites containing an inversion center as indicated by the dominant lines (5D0→7F1) of the Eu emission spectrum which only correspond to an inversion center. Thus, Eu ions are expected to substitute for La ions in the Na1.45La8.55(SiO4)6(F0.9O1.1) host, resulting in a chemical formula of Na1.45La8.55-8.55x(SiO4)6(F0.9O1.1): 8.55x Eu. When Eu ions are incorporated into the Na1.45La8.55(SiO4)6(F0.9O1.1) host, substitution of Eu ions for La ions might induce vacancy defects to compensate for the excess positive charge. The SiO4 tetrahedral can fill in the gaps in the three dimensional structure of La–O. As a consequence, the crystal lattice for Na1.45La8.55(SiO4)6(F0.9O1.1) might exhibit slight deformation from monoclinic symmetry due to the nonequivalent substitution. The compound Na1.45La8.55(SiO4)6(F0.9O1.1) is particularly suitable as model for fundamental studies of certain physical properties due to the simplicity of the crystal structure.The emission energy level scheme of the Eu–doped Na1.45La8.55(SiO4)6(F0.9O1.1) phosphor under 254 nm excitation is depicted in Fig. S2. Eu ions with 4f7 configuration have complicated energy levels and multiple possible transitions between the f levels.1 The energy levels depicted in Fig. S2 are determined from the calculated energy levels reported by Carnall et al.2-3 Eu ions are excited from the ground 5D0 state to the excited 5D2 state when the sample is excited with 254 nm light. Due to the small energy differences between higher energy levels, electrons relax to the 5D2 level by cascade nonradioactive relaxation (NR) processes. Thus, we observe five intense emission peaks centered at 575 nm, 587 nm, 595 nm, 611 nm, and 619 nm corresponding to the 5D0 to 7F j (j = 0–2) emissions of Eu ions.4 The energies corresponding to the excitation spectral lines are higher than the excitation energy for these levels. Thus, these levels may also be populated by a relaxation process similar to the 5D0 level.4Figure S3 displays the diffuse reflectance spectrum of Na1.45La8.55-8.55x(SiO4)6(F0.9O1.1): 8.55x Eu (x= 0.000 and 0.035) samples in the spectral region from 200 to 800 nm at room temperature [UV–visible spectrophotometer (Cary 5000, Varian, America) using BaSO4as a reference]. The Na1.45La8.55-8.55x(SiO4)6(F0.9O1.1): 8.55x Eu (x= 0.035) sample has a wide and strong near ultraviolet (NUV) absorption before 400 nm. The absorption band does not overlap with the LED blue phosphor emission wavelength. In order to use this phosphor for NUV LED applications, the photon absorption must occur at lower wavelengths. However, the absorption of the Eu ion is overlapped by the charge transfer (CT) transition. Therefore, Na1.45La8.55(SiO4)6(F0.9O1.1): Eu could be applied for use NUV–based WLEDs.Fig. S4 shows the fluorescence decay curve of our standard sampl e at λem = 610 nm and λe x = 254 nm [The decay curve of the Eu ion in the Na 1.45La 8.55(SiO 4)6(F 0.9O 1.1): Eu phosphor was measured by an FLS920–Combined with Time Resolved & Steady State Fluorescence Spectrometer (Edinburgh Instruments) with a 450 W xenon lamp as a light source]. There are two transition superpositions in the fluorescence decay curve for the 5D 0→7F 1 transition of the Eu ions in the sample. The emission decay curves of the Eu ions are fit by the second–order exponential equation (1):1212()A exp()A exp()t t I t t t =-+- (1)where I is the luminescence intensity, t is the time, τ1 and τ2 are the show and fast components of the decay lifetimes, respectively, and A 1 and A 2 are their corresponding fit parameters.5 On the basis of Eq. (1), the lifetimes are determined to be τ1 = 735.70 m s and τ2 = 1014.63 m s.References1.S. S. Babu et al ., J. Lumin . 126, 109 (2007). 2.W. T. Carnall et al ., J. Chem. Phys . 49, 4412 (1968). 3.W. T. Carnall et al ., J. Chem. Phys . 90, 3443 (1989). 4.R. J. Xie et al ., Appl . Phys . Lett . 90, 191101 (2007). 5. P. Waltereit et al ., Nature . 406, 865 (2000).。