Design of MOS Current-Mode Logic Standard Cells
MOS电流模逻辑电路
♦ Speed ♦ faster than CMOS (usual belief: due to low VSWING) ♦ adopted in multi-GHz communications systems
♦ MUX/DEMUX ICs for SONET/SDH optic-fiber links ♦ high-speed crosspoint switches for network (LAN/WAN) applications ♦ RF applications (PLL, prescalers, circuits for clock recovery, VCOs...) [R96], [HFP01], [LR00], [NIE03], [YL98] ♦ very high-speed buffers/links
4.2 2MCML逻辑电路的参数设计
Av >
MCML逻辑的性能指标可以分为两类：保证MCML电路稳定性和逻辑功能正确性 的约束性指标和延时、功耗、功耗延时积等性能指标，具体如下表所示。
约束性指标 取值范围 Av：电压增益 意义 保证电路的可再生性
NM：噪声容限
△V：输入输出信号摆幅
NM > 0.4△V
♦ Power efficiency [TUF01] ♦ more power efficient than CMOS at high speed operation ♦ MCML suitable for low-power DSP ICs [MR00]
♦ Switching noise/signal integrity
为保证MCML电路实现正确的逻辑操作
V Vin , min 1
Av
必须大于
MOS电流模逻辑电路
♦ Delay sensitivity to process, supply, environmental variations and coupling( very important in nanometer technologies)
♦ process and environmental ♦ MCML seems to be lower than CMOS (under investigation [B03]) ♦ supply ♦ MCML insensitive for small VDD variations [AP05] (delay set by RC time constant, VDD variations are very small) ♦ capacitive coupling ♦ delay variation: negligible effect on a single line (opposite noise signals cancel out) ♦ better immunity with symmetric layout (common mode)
∆V Av ∆Vin , min Av = 2 IRD = 2∆V ⇒ = ∆Vin, min 2
为保证MCML电路实现正确的逻辑操作 电路实现正确的逻辑操作 为保证
∆V ∆Vin , min ≥ 1
Av
必须大于
2
。
反相器的噪声容限NM可以表示为 Massimo Alioto2003]： 可以表示为[ 反相器的噪声容限 可以表示为 ：
其基本思路为给定传输延时，然后通过设计参数的选择，主要是电流 和输出摆幅 其基本思路为给定传输延时，然后通过设计参数的选择，主要是电流I和输出摆幅 △V，在保证约束性指标符合条件的前提下获得尽可能低的功耗。其设计约束如 ，在保证约束性指标符合条件的前提下获得尽可能低的功耗。 下所示。 下所示。
常用集成电路名词缩写汇总（第二版）
常⽤集成电路名词缩写汇总（第⼆版）重要说明整个集成电路的设计和⽣产链路很长,相关专有名称很多;本⽂对常见的集成电路相关的名词缩写进⾏了汇总,特别聚焦与集成电路设计领域,意在整理常⽤的数字电路/DC/PT/ICC/DFV/DFT/RTL/ATE相关⽅⾯的知识点,⽅便⼤家快速学习和掌握相关知识,⽅便⼤家查询;同时希望对学⽣将来的培训/⾯试等活动给予最⼤的帮助;⽂章按照字母排序的⽅式进⾏编排,⽅便⼤家查询;本次⽂章内容为第⼆次发布,我们将定期更新,逐步完善;欢迎⼤家提供相关信息⾄xgcl_wei微信号,帮助我们逐步完善内容,⽅便更多的⼈查询和使⽤,感谢您的参与,谢谢!英⽂全称中⽂说明ABV Assertion based verification基于断⾔的验证AES Advanced Encryption Standard⾼级加密标准,是美国政府采⽤的⼀种区块加密标准ADC Analog-to-Digital Converter指模/数转换器或者模数转换器AHB Advanced High Performance Bus⾼级⾼性能总线ALF Advanced Library Format先进（时序）库格式ALU Arithmetic and logic unit算数逻辑单元AMBA Advanced Microcontroller Bus Architecture⾼级微控制器总线体系ANT antenna天线效应AOP Aspect Oriented Programming⾯向⽅⾯编程APB Advanced Peripheral Bus⾼级外部设备总线API Application Programming Interface应⽤程序编程接⼝APR Auto place and route⾃动布局布线ARM Advanced RISC Machines 英国Acorn公司(ARM公司的前⾝)设计的低功耗成本的第⼀款RISC微处理器。
模拟IC设计知识分享(1)
模拟IC设计知识分享(1)最近刚好要考AAIC了，于是就想着怎么把考试的知识点总结起来分成章节。
本来想画成思维导图，但一是很多公式很多图，二是知识点间相互都有联系，也着实不太好具象化。
模拟电路就是折中的艺术，硬要画成放射状也是有点难为我了。
不如就写成文章，不仅能帮助我learning by teaching，说不定也能造福点后人。
MOS管作为模拟IC的基础组成部分，掌握MOS的各项特性是重中之重。
但由于MOS管其实是一个特性非常复杂，且无法用一个简单模型做出概括的非线性器件，我们也有必要对其进行一定的简化。
我们首先介绍MOS的基本结构和简化模型。
一、MOS管三维结构MOS管符号[1]典型的NMOS拥有四个端口，分别是栅极(gate)，源极(source)，漏极(drain)和衬底(body/bulk)。
MOS管是一种将电压转化为电流的器件，可以简单理解为一个压控电流源，以栅极和源极间的电压控制流过漏极和源极的电流。
根据各个端口间电压的不同，MOS管还可以分为三个工作区域，分别为截止区(cut-off region)，线性区/三极管区(triode region)和饱和区(saturation region)。
我们可能已经了解MOS管可以用作开关，也可以对信号进行放大。
当MOS管用作开关时，它就工作在线性区；而当用作放大器时，它需要工作在饱和区。
在进一步分析每个工作区域的特性和条件之前，我们首先把这个抽象模型和实际世界的MOS管这一半导体器件对应起来。
NMOS管三维结构[2]上图所示是一个NMOS的结构图。
器件制作在p型衬底(substrate)上，两个n离子掺杂区形成源极和漏极，并通过金属引出。
早期MOS管的栅极由金属层制成(如图，这也是MOSFET名字中第一个M-Metal的由来)，但现今大部分的MOS 管采用多晶硅(poly)来制作栅极，而名字却没有随之修改。
当然多晶硅和金属制作栅极各有利弊，还请详见半导体物理一书。
半导体微电子专业词汇中英文对照
半导体微电子专业词汇中英文比较Accelerated testing 加快实验Acceptor受主Acceptor atom受主原子Accumulation累积、聚积Accumulating contact累积接触Accumulation region累积区Accumulation layer累积层Active region 有源区Active component 有源元Active device 有源器件Activation 激活Activation energy 激活能Active region 有源（放大）区A/D conversion 模拟 - 数字变换Adhesives 粘接剂Admittance 导纳Aging老化Airborne空载Allowed band允带allowance容限，公差Alloy-junction device 合金结器件Aluminum(Aluminum) 铝Aluminum – oxide 铝氧化物Aluminum Nitride氮化铝Aluminum passivation 铝钝化Ambipolar 双极的Ambient temperature 环境温度A M light振幅调制光，调幅光amplitude limiter限幅器Amorphous 无定形的，非晶体的Amplifier功放放大器Analogue(Analog) comparator模拟比较器Angstrom埃Anneal退火Anisotropic各向异性的Anode 阳极Antenna 天线Aperture孔径Arsenide (As)砷Array阵列Atomic原子的Atom Clock原子钟Attenuation 衰减Audio 声频Auger 俄歇Automatic 自动的Automotive 汽车的Availability 适用性Avalanche 雪崩Avalanche breakdown 雪崩击穿Avalanche excitation 雪崩激发Background carrier 本底载流子Background doping 本底混杂Backward 反向Backward bias反向偏置Ball bond球形键合Band 能带Band gap能带空隙Bandwidth带宽Bar 巴条发光条Barrier势垒Barrier layer 势垒层Barrier width 势垒宽度Base 基极Base contact基区接触Base stretching基区扩展效应Base transit time基区渡越时间Base transport efficiency基区输运系数Base-width modulation基区宽度调制Batch批次Battery电池Beam 束光束电子束Bench 工作台Bias 偏置Bilateral switch 双向开关Binary code 二进制代码Binary compound semiconductor 二元化合物半导体Bipolar 双极性的Bipolar Junction Transistor (BJT) 双极晶体管Bit 位比特Blocking band 阻带Body - centered 体心立方Body-centred cubic structure 体立心构造Boltzmann波尔兹曼Bond 键、键合Bonding electron价电子Bonding pad键合点Boron 硼Borosilicate glass硼硅玻璃Bottom-up由下而上的Boundary condition界限条件Bound electron约束电子Bragg effect 布拉格效应Breadboard 模拟板、实验板Break down 击穿Break over 转折Brillouin 布里渊 FBrillouin zone 布里渊区Buffer 缓冲器Built-in 内建的Build-in electric field 内建电场Bulk 体/ 体内Bulk absorption 体汲取Bulk generation 体产生Bulk recombination 体复合Burn-in 老化Burn out 烧毁Buried channel 埋沟Buried diffusion region 隐埋扩散区Bus 总线Calibration校准，检定，定标、刻度，分度Capacitance 电容Capture cross section 俘获截面Capture carrier 俘获载流子Carbon dioxide (CO2) 二氧化碳Carrier 载流子、载波Carry bit 进位位Cascade 级联Case 管壳Cathode 阴极Cavity腔体Center中心Ceramic 陶瓷（的）Channel 沟道Channel breakdown沟道击穿Channel current 沟道电流Channel doping 沟道混杂Channel shortening沟道缩短Channel width沟道宽度Characteristic impedance特点阻抗Charge 电荷、充电Charge-compensation effects电荷赔偿效应Charge conservation电荷守恒Charge drive/exchange/sharing/transfer/storage 电荷驱动/互换/共享/转移/储存Chemical etching 化学腐化法Chemically-Polish 化学抛光Chemically-Mechanically Polish (CMP) 化学机械抛光Chemical vapor deposition (cvd) 化学汽相淀积Chip 芯片Chip yield 芯片成品率Circuit 电路Clamped 箝位Clamping diode 箝位二极管Cleavage plane 解理面Clean 冲洗Clock rate时钟频次Clock generator Clock flip-flop 时钟发生器时钟触发器Close-loop gain 闭环增益Coating 涂覆涂层Coefficient of thermal expansion 热膨胀系数Coherency 相关性Collector 集电极Collision 碰撞Compensated OP-AMP 赔偿运放Common-base/collector/emitter connection 共基极 / 集电极 / 发射极连结Common-gate/drain/source connection 共栅 / 漏/ 源连结Common-mode gain 共模增益Common-mode input 共模输入Common-mode rejection ratio (CMRR) 共模克制比Communication 通讯Compact 致密的Compatibility 兼容性Compensation赔偿Compensated impurities赔偿杂质Compensated semiconductor赔偿半导体Complementary Darlington circuit互补达林顿电路Complementary Metal-Oxide-SemiconductorField-Effect-Transistor(CMOS)互补金属氧化物半导体场效应晶体管Computer-aided design(CAD)/test(CAT)/manufacture(CAM)计算机协助设计/测试/ 制造Component 元件Compound Semiconductor 化合物半导体Conductance 电导Conduction band (edge) 导带(底)Conduction level/state 导带态Conductor 导体Conductivity 电导率Configuration 构造Conlomb 库仑Constants 物理常数Constant energy surface 等能面Constant-source diffusion 恒定源扩散Contact 接触Continuous wave 连续波Continuity equation 连续性方程Contact hole接触孔Contact potential 接触电势Controlled 受控的Converter 变换器Conveyer 传输器Cooling 冷却Copper interconnection system 铜互连系统Corrosion 腐化Coupling 耦合Covalent 共阶的Crossover 交错Critical 临界的Cross-section 横断面Crucible 坩埚Cryogenic cooling system冷却系统Crystal defect/face/orientation/lattice 晶体缺点 / 晶面/晶向/晶格Cubic crystal system立方晶系Current density电流密度Curvature 曲率Current drift/drive/sharing 电流漂移/驱动/ 共享Current Sense 电流取样Curve 曲线Custom integrated circuit 定制集成电路Cut off 截止Cylindrical 柱面的Czochralshicrystal直立单晶Czochralski technique切克劳斯基技术（Cz 法直拉晶体J） )Dangling bonds悬挂键Dark current 暗电流Dead time 空载时间Decade 十进制Decibel (dB) 分贝Decode 解码Deep acceptor level 深受主能级Deep donor level 深施主能级Deep energy level 深能级Deep impurity level 深度杂质能级Deep trap 深圈套Defeat 缺点Degenerate semiconductor简并半导体Degeneracy 简并度Degradation 退化Degree Celsius(centigrade) /Kelvin 摄氏 / 开氏温度Delay 延缓Density 密度Density of states 态密度Depletion 耗尽Depletion approximation 耗尽近似Depletion contact 耗尽接触Depletion depth 耗尽深度Depletion effect 耗尽效应Depletion layer 耗尽层Depletion MOS 耗尽 MOS Depletion region 耗尽区Deposited film 淀积薄膜Deposition process 淀积工艺Design rules 设计规则Detector 探测器Developer 显影剂Diamond 金刚石Die 芯片（复数 dice ）Diode 二极管Dielectric Constant 介电常数Dielectric isolation 介质隔绝Difference-mode input 差模输入Differential amplifier 差分放大器Differential capacitance 微分电容Diffraction 衍射Diffusion 扩散Diffusion coefficient 扩散系数Diffusion constant扩散常数Diffusivity 扩散率Diffusion capacitance/barrier/current/furnace 扩散电容/势垒/电流/炉Digital circuit 数字电路Dimension (1) 尺寸 (2) 量钢 (3) 维，度Diode 二极管Dipole domain 偶极畴Dipole layer 偶极层Direct-coupling 直接耦合Direct transition直接跃迁Directional antenna定向天线Discharge放电Discrete component分立元件Disorder无序的Display显示器Dissipation耗散Dissolution溶解Distribution散布Distributed capacitance散布电容Distributed model散布模型Displacement位移Dislocation位错Domain 畴Donor 施主Donor exhaustion施主耗尽Dopant 混杂剂Doped semiconductor 混杂半导体Doping concentration 混杂浓度Dose 剂量Double-diffusive MOS(DMOS)双扩散MOS Drift 漂移Drift field Drift mobility Dry etching 漂移电场迁徙率干法腐化Dry/wet oxidation干/湿法氧化Dose 剂量Dual-polarization双偏振，双极化Duty cycle工作周期Dual-in-line package（DIP）双列直插式封装Dynamics 动向Dynamic characteristics动向属性Dynamic impedance动向阻抗Early effect厄利效应Early failure初期无效Effect效应Effective mass有效质量Electric Erase Programmable Read Only Memory(E2PROM) 电可擦除只读储存器Electrode电极Electromigration电迁徙Electron affinity电子亲和势Electron-beam电子束Electroluminescence电致发光Electron gas 电子气Electron trapping center 电子俘获中心Electron Volt (eV) 电子伏Electro-optical 光电的Electrostatic 静电的Element元素/元件/配件Elemental semiconductor 元素半导体Ellipse 椭圆Emitter 发射极Emitter-coupled logic 发射极耦合逻辑Emitter-coupled pair 发射极耦合对Emitter follower 射随器Empty band 空带Emitter crowding effect 发射极集边（拥堵）效应Endurance test =life test 寿命测试Energy state 能态Energy momentum diagram 能量 - 动量 (E-K) 图Enhancement mode 加强型模式 EnhancementMOS 加强性 MOS Enteric ( 低 ) 共溶的Environmental test 环境测试Epitaxial 外延的Epitaxial layer Epitaxial slice 外延层外延片Epoxy 环氧的Equivalent circuit 等效电路Equilibrium majority /minority carriers 均衡多半/ 少数载流子Equipment设施Erasable Programmable ROM (EPROM) 可搽取（编程）储存器Erbium laser掺铒激光器Error function complement余偏差函数Etch刻蚀Etchant刻蚀剂Etching mask Excess carrier 抗蚀剂掩模节余载流子Excited state 激发态Exciton 激子Exponential 指数的Extrapolation 外推法Extrinsic 非本征的Extrinsic semiconductor 杂质半导体Fabry-Perot amplifier 法布里 - 珀罗放大器Face - centered 面心立方Fall time 降落时间Fan-in 扇入Fan-out 扇出Fast recovery 快恢复Fast surface states 快表面态Feedback 反应Fermi level 费米能级Femi potential 费米势Fiber optic 光纤Field effect transistor 场效应晶体管Field oxide 场氧化层Figure of merit 质量因数Filter 滤波器Filled band 满带Film 薄膜Fine pitch 细节距Flash memory 闪存储存器Flat band 平带Flat pack 扁平封装Flatness 平坦度Flexible 柔性的Flicker noise 闪耀（变）噪声Flip-chip 倒装芯片Flip- flop toggle 触发器翻转Floating gate 浮栅Fluoride etch 氟化氢刻蚀Focal plane焦平面Forbidden band禁带Formulation列式，表达Forward bias正向偏置Forward blocking /conductingFree electron自由电子Frequency deviation noise正向阻断频次漂移噪声/ 导通Frequency response频次响应Function函数Gain 增益Gallium-Arsenide(GaAs)砷化镓Gallium Nitride氮化镓Gate 门、栅、控制极Gate oxide 栅氧化层Gate width 栅宽Gauss（ian ）高斯Gaussian distribution profile高斯混杂散布Generation-recombination产生-复合Geometries几何尺寸Germanium(Ge) 锗Gold 金Graded 缓变的Graded (gradual) channel 缓变沟道Graded junction 缓变结Grain 晶粒Gradient 梯度Graphene 石墨烯Grating 光栅Green laser 绿光激光器Ground 接地Grown junction 生长结Guard ring 保护环Guide wave 导波波导Gunn - effect 狄氏效应Gyroscope 陀螺仪Hardened device 辐射加固器件Harmonics 谐波Heat diffusion 热扩散Heat sink 散热器、热沉Heavy/light hole band 重/ 轻空穴带Hell - effect 霍尔效应Hertz 赫兹Heterojunction 异质结Heterojunction structure 异质结构造Heterojunction Bipolar Transistor（HBT）异质结双极型晶体High field property高场特征High-performance MOS(H-MOS) 高性能 MOS器件High power 大功率Hole 空穴Homojunction 同质结Horizontal epitaxial reactor 卧式外延反响器Hot carrier 热载流子Hybrid integration 混淆集成Illumination (1) 照明 (2) 照明学Image - force 镜象力Impact ionization 碰撞电离Impedance 阻抗Imperfect structure 不完好构造Implantation dose 注入剂量Implanted ion 注入离子Impurity 杂质Impurity scattering 杂志散射Inch 英寸Incremental resistance电阻增量（微分电阻）In-contact mask接触式掩模Index of refraction 折射率Indium 铟Indium tin oxide (ITO) 铟锡氧化物Inductance 电感Induced channel 感觉沟道Infrared 红外的Injection 注入Input power 输入功率Insertion loss 插入消耗Insulator 绝缘体Insulated Gate FET(IGFET) 绝缘栅 FET Integrated injection logic 集成注入逻辑Integration 集成、积分Integrated Circuit 集成电路Interconnection 互连Interconnection time delay 互连延时Interdigitated structure 交互式构造Interface 界面Interference 干预International system of unions 国际单位制Internally scattering 谷间散射Interpolation 内插法Intrinsic 本征的Intrinsic semiconductor 本征半导体Inverse operation 反向工作Inversion 反型Inverter 倒相器Ion 离子Ion beam 离子束Ion etching 离子刻蚀Ion implantation 离子注入Ionization 电离Ionization energy 电离能Irradiation 辐照Isolation land隔绝岛Isotropic 各向同性Junction FET(JFET) 结型场效应管Junction isolation 结隔绝Junction spacing 结间距Junction side-wall 结侧壁Laser 激光器Laser diode激光二极管Latch up闭锁Lateral横向的Lattice 晶格Layout 疆域Lattice binding/cell/constant/defect/distortion 晶格结协力 /晶胞/ 晶格 / 晶格常熟 / 晶格缺点 / 晶格畸变Lead 铅Leakage current （泄）漏电流Life time 寿命linearity 线性度Linked bond 共价键Liquid Nitrogen 液氮Liquid －phase epitaxial growth technique 液相外延生长技术Lithography 光刻Light Emitting Diode(LED) 发光二极管Linearity 线性化Liquid 液体Lock in 锁定Longitudinal纵向的Long life长寿命Lumped model 集总模型Magnetic磁的Majority carrier多半载流子Mask 掩膜板，光刻板Mask level掩模序号Mask set掩模组Mass - action law质量守恒定律Master-slave D flip-flop主从D 触发器Matching般配Material资料Maxwell麦克斯韦Mean free path均匀自由程Mean time before failure (MTBF)均匀工作时间Mechanical机械的Membrane (1) 薄腊，膜片 (2) 隔阂Megeto - resistance磁阻Mesa 台面MESFET-Metal Semiconductor金属半导体FET Metalorganic Chemical Vapor Deposition MOCVD 金属氧化物化学汽相淀积Metallization金属化Metal oxide semiconductor (MOS)金属氧化物半导体MeV 兆电子伏Microelectronic technique 微电子技术Microelectronics微电子学Microelectromechanical System (MEMS)微电子机械系统Microwave微波Millimeterwave毫米波Minority carrier少量载流子Misfit失配Mismatching失配Mobility迁徙率Module 模块Modulate 调制Molecular crystal 分子晶体Monolithic IC 单片MOSFET金属氧化物半导体场效应晶体管Mount 安装Multiplication倍增Modulator调制Multi-chip IC多芯片ICMulti-chip module(MCM)多芯片模块Multilayer多层Multiplication coefficient倍增因子Multiplexer复用器Multiplier倍增器Naked chip 未封装的芯片（裸片）Nanometer 纳米Nanotechnology 纳米技术Negative feedback 负反应Negative resistance 负阻Negative-temperature-coefficient 负温度系数Nesting 套刻Noise figure 噪声系数Nonequilibrium 非均衡Nonvolatile 非挥发（易失）性Normally off/on 常闭/开Nuclear 核Numerical analysis 数值剖析Occupied band 满带Offset 偏移、失调On standby 待命状态Ohmic contact 欧姆接触Open circuit 开路Operating point 工作点Operating bias 工作偏置Operational amplifier (OPAMP) 运算放大器Optical photon 光子Optical quenching 光猝灭Optical transition 光跃迁Optical-coupled isolator 光耦合隔绝器Organic semiconductor 有机半导体Orientation 晶向、定向Oscillator 振荡器Outline 外形Out-of-contact mask 非接触式掩模Output characteristic 输出特征Output power 输出功率Output voltage swing 输出电压摆幅Overcompensation 过赔偿Over-current protection 过流保护Over shoot 过冲Over-voltage protection 过压保护Overlap 交迭Overload过载Oscillator振荡器Oxide氧化物Oxidation氧化Oxide passivation氧化层钝化Package 封装Pad 压焊点Parameter 参数Parasitic effect 寄奏效应Parasitic oscillation 寄生振荡Pass band 通带Passivation 钝化Passive component 无源元件Passive device 无源器件Passive surface 钝化界面Parasitic transistor 寄生晶体管Pattern 图形Payload 有效载荷Peak-point voltage 峰点电压Peak voltage 峰值电压Permanent-storage circuit 永远储存电路Period 周期Permeable - base 可浸透基区Phase-lock loop 锁相环Phase drift 相移Phonon spectra 声子谱Photo conduction 光电导Photo diode 光电二极管Photoelectric cell 光电池Photoelectric effect 光电效应Photonic devices 光子器件Photolithographic process 光刻工艺Photoluminescence 光致发光Photo resist （光敏）抗腐化剂Photo mask 光掩模Piezoelectric effect 压电效应Pin 管脚Pinch off 夹断Pinning of Fermi level 费米能级的钉扎（效应）Planar process 平面工艺Planar transistor 平面晶体管Plasma 等离子体Plane 平面的Plasma 等离子体Plate 板电路板P-N junction pn 结Poisson equation 泊松方程Point contact 点接触Polarity 极性Polycrystal 多晶Polymer semiconductor聚合物半导体Poly-silicon多晶硅Positive 正的Potential ( 电 ) 势Potential barrier 势垒Potential well 势阱Power electronic devices 电力电子器件Power dissipation功耗Power transistor 功率晶体管Preamplifier 前置放大器Primary flat 主平面Print-circuit board(PCB) 印制电路板Probability 几率Probe 探针Procedure 工艺Process 工艺Projector 投影仪Propagation delay传输延时Proton质子Proximity effect周边效应Pseudopotential method赝势法Pump 泵浦Punch through 穿通Pulse triggering/modulating 脉冲触发 / 调制Pulse Widen Modulator(PWM) 脉冲宽度调制Punchthrough 穿通Push-pull stage 推挽级Q Q 值Quality factor 质量因子Quantization 量子化Quantum 量子Quantum efficiency 量子效应Quantum mechanics 量子力学Quasi – Fermi －level 准费米能级Quartz 石英Radar 雷达Radiation conductivity 辐射电导率Radiation damage 辐射损害Radiation flux density 辐射通量密度Radiation hardening 辐射加固Radiation protection 辐射保护Radiative - recombination 辐照复合Radio 无线电射电射频Radio-frequency RF射频Raman 拉曼Random 随机Range 测距Radio比率系数Ray 射线Reactive sputtering source 反响溅射源Real time 及时Receiver 接收机Recombination 复合Recovery diode 恢复二极管Record 记录Recovery time 恢复时间Rectifier 整流器（管）Rectifying contact 整流接触Red light 红光Reference 基准点基准参照点Refractive index 折射率Register 存放器Regulate 控制调整Relative 相对的Relaxation 驰豫Relaxation lifetime 驰豫时间Relay中继Reliability靠谱性Remote 远程Repeatability 可重复性Reproduction 重复制造Residual current 节余电流Resonance 谐振Resin 树脂Resistance 电阻Resistor 电阻器Resistivity 电阻率Regulator 稳压管（器）Resolution 分辨率Response time 响应时间Return signal 回波信号Reverse 反向的Reverse bias 反向偏置Ribbon 光纤带Ridge waveguide脊形波导Ring laser环形激光器Rotary wave旋转波Run 运转Sampling circuit取样电路Sapphire 蓝宝石（ Al2O3）Satellite valley 卫星谷Saturated current range电流饱和区Scan 扫描Scaled down 按比率减小Scattering 散射Schematic layout 表示图，简图Schottky 肖特基Schottky barrier 肖特基势垒Schottky contact 肖特基接触Screen 挑选Scribing grid 划片格Secondary flat 次平面Seed crystal 籽晶Segregation 分凝Selectivity 选择性Self aligned 自瞄准的Self diffusion 自扩散Semiconductor 半导体Semiconductor laser 半导体激光器Semiconductor-controlled rectifier 半导体可控硅Sensitivity 敏捷度Sensor 传感器Serial 串行/串连Series inductance 串连电感Settle time 成即刻间Sheet resistance薄层电阻Shaping 成型Shield 障蔽Shifter 移相器Short circuit 短路Shot noise 散粒噪声Shunt 分流Sidewall capacitance 边墙电容Signal 信号Silica glass 石英玻璃Silicon 硅Silicon carbide 碳化硅Silicon dioxide (SiO2) 二氧化硅Silicon Nitride(Si3N4) 氮化硅Silicon On Insulator 绝缘体上硅Silver whiskers 银须Simple cubic 简立方Simulation 模拟Single crystal 单晶Sink 热沉Sinter 烧结Skin effect 趋肤效应Slot 槽隙Slow wave 慢波Smooth 圆滑的Subthreshold 亚阈值的Solar battery/cell 太阳能电池Solid circuit 固体电路Solid Solubility 固溶度Solution 溶液Sonband 子带Source 源极Source follower源随器Space charge Space Craft空间电荷宇宙飞翔器Spacing间距Specific heat(PT)比热Spectral光谱Spectrum光谱(复数)Speed-power product速度功耗乘积Spherical球面的Spin自旋Split分裂Spontaneous emission自觉发射Spot 斑点Spray 喷涂Spreading resistance 扩展电阻Sputter 溅射Square root 平方根Stability 稳固性Stacking fault 层错Standard 标准的Standing wave 驻波State-of-the-art最新技术Static characteristic 静态特征Statistical analysis 统计剖析Steady state 稳态Step motor 步进式电动机Stimulated emission 受激发射Stimulated recombination 受激复合Stopband 阻带Storage time 储存时间Stress应力Stripline带状线Subband 次能带Sublimation升华Submillimeter亚毫米波Substrate衬底Substitutional Superconductor Superlattice替位式的超导(电)体超晶格Supply 电源Surface mound Surge capacity Switching time 表面安装浪涌能力开关时间Switch 开关Synchronizer同步器，同步装置Synthetic-aperture合成孔径System 系统Technical技术的，工艺的Telecommunication远距通讯，电信Telescope望远镜Terahertz太赫兹Terminal终端Template模板Temperature 温度Tensor 张量Test 测试试验Thermal activation 热激发Thermal conductivity 热导率Thermal equilibrium 热均衡Thermal Oxidation 热氧化Thermal resistance 热阻Thermal sink 热沉Thermal velocity 热运动Thick- film technique 厚膜技术Thin- film hybrid IC 薄膜混淆集成电路Thin-Film Transistor(TFT) 薄膜晶体Three dimension 三维Threshold 阈值Through Silicon Via 硅通孔Thyistor 晶闸管Time resolution 时间分辨率Tolerance 公差T/R module 发射 / 接收模块Transconductance 跨导Transfer characteristic 转移特征Transfer electron 转移电子Transfer function 传输函数Transient 瞬态的Transistor aging(stress) 晶体管老化Transit time 渡越时间Transition 跃迁Transition-metal silica 过分金属硅化物Transition probability 跃迁几率Transition region 过渡区Transmissivity 透射率Transmitter 发射机Transceiver 收发机Transport 输运Transverse 横向的Trap 圈套Trapping 俘获Trapped charge 圈套电荷Travelling wave 行波Trigger 触发Trim 分配调整Triple diffusion三重扩散Tolerance容差Tube 管子电子管Tuner调理器Tunnel(ing)地道（穿）Tunnel current 地道电流Turn - off time 关断时间Ultraviolet紫外的Ultrabright超亮的Ultrasonic超声的Underfilling下填补Undoped 无混杂Unijunction单结的Unipolar单极的Unit cell原（元）胞Unity- gain frequency单位增益频次Unilateral-switch单向开关Vacancy 空位Vacuum 真空Valence(value) band价带Value band edge价带顶Valence bond价键Vapour phase汽相Varactor变容管Variable可变的Vector矢量Vertical垂直的Vibration振动Visible light可见光Voltage电压Volt伏特Wafer 晶片Watt瓦Wave guide波导Wavelength波长Wave-particle duality波粒二相性Wear-out烧毁Wetting浸润Wideband 宽禁带Wire 引线Wire routing Work function 布线功函数Worst-case device最坏状况器件X-ray X射线Yield成品率Zinc锌。
电路英语词汇
电路英语词汇电路的基本概念及定律电源 source电压源 voltage source电流源 current source理想电压源 ideal voltage source理想电流源 ideal current source伏安特性 volt-ampere characteristic电动势 electromotive force电压 voltage电流 current电位 potential电位差 potential difference欧姆 Ohm伏特 Volt安培 Ampere瓦特 Watt焦耳 Joule电路 circuit电路元件 circuit element电阻 resistance电阻器 resistor电感 inductance电感器 inductor电容 capacitance电容器 capacitor电路模型 circuit model参考方向 reference direction参考电位 reference potential欧姆定律 Ohm’s law基尔霍夫定律 Kirchhoff’s law基尔霍夫电压定律 Kirchhoff’s voltage law（KVL）基尔霍夫电流定律 Kirchhoff’s current law（KCL）结点 node支路 branch回路 loop网孔 mesh支路电流法 branch current analysis网孔电流法 mesh current analysis结点电位法 node voltage analysis电源变换 source transformations叠加原理 superposition theorem网络 network无源二端网络 passive two-terminal network 有源二端网络 active two-terminal network 戴维宁定理 Thevenin’s theorem诺顿定理 Norton’s theorem开路（断路）open circuit短路 short circuit开路电压 open-circuit voltage短路电流 short-circuit current交流电路直流电路 direct current circuit (dc)交流电路 alternating current circuit (ac)正弦交流电路 sinusoidal a-c circuit平均值 average value有效值 effective value均方根值root-mean-squire value (rms)瞬时值 instantaneous value电抗 reactance感抗 inductive reactance容抗 capacitive reactance法拉 Farad亨利 Henry阻抗 impedance复数阻抗 complex impedance相位 phase初相位 initial phase相位差 phase difference相位领先 phase lead相位落后 phase lag倒相，反相 phase inversion频率 frequency角频率 angular frequency赫兹 Hertz相量 phasor相量图 phasor diagram有功功率 active power无功功率 reactive power视在功率 apparent power功率因数 power factor功率因数补偿 power-factor compensation串联谐振 series resonance并联谐振 parallel resonance谐振频率 resonance frequency频率特性 frequency characteristic幅频特性amplitude-frequency response characteristic 相频特性 phase-frequency response characteristic截止频率 cutoff frequency品质因数 quality factor通频带 pass-band带宽 bandwidth (BW)滤波器 filter一阶滤波器 first-order filter二阶滤波器 second-order filter 低通滤波器 low-pass filter高通滤波器 high-pass filter带通滤波器 band-pass filter带阻滤波器 band-stop filter转移函数 transfer function波特图 Bode diagram傅立叶级数 Fourier series三相电路三相电路 three-phase circuit三相电源 three-phase source对称三相电源 symmetrical three-phase source对称三相负载 symmetrical three-phase load相电压 phase voltage相电流 phase current线电压 line voltage线电流 line current三相三线制 three-phase three-wire system三相四线制 three-phase four-wire system三相功率 three-phase power星形连接 star connection(Y-connection)三角形连接 triangular connection(D- connection ,delta connection)中线 neutral line电路的暂态过程分析暂态 transient state稳态 steady state暂态过程，暂态响应 transient response 换路定理 low of switch一阶电路 first-order circuit三要素法 three-factor method时间常数 time constant积分电路 integrating circuit微分电路 differentiating circuit磁路与变压器磁场magnetic field磁通 flux磁路 magnetic circuit磁感应强度 flux density磁通势 magnetomotive force 磁阻 reluctance电动机直流电动机 dc motor交流电动机 ac motor异步电动机 asynchronous motor同步电动机 synchronous motor三相异步电动机 three-phase asynchronous motor 单相异步电动机 single-phase asynchronous motor 旋转磁场 rotating magnetic field定子 stator转子 rotor转差率 slip起动电流 starting current起动转矩 starting torque额定电压 rated voltage额定电流 rated current额定功率 rated power机械特性 mechanical characteristic继电器-接触器控制按钮 button熔断器 fuse开关 switch行程开关 travel switch继电器 relay接触器 contactor常开(动合)触点 normally open contact 常闭(动断)触点 normally closed contact 时间继电器 time relay热继电器 thermal overload relay中间继电器 intermediate relay可编程控制器（PLC）可编程控制器 programmable logic controller语句表 statement list梯形图 ladder diagram半导体器件本征半导体intrinsic semiconductor掺杂半导体doped semiconductorP型半导体 P-type semiconductorN型半导体 N--type semiconductor自由电子 free electron空穴 hole载流子 carriersPN结 PN junction扩散 diffusion漂移 drift二极管 diode硅二极管 silicon diode锗二极管 germanium diode阳极 anode阴极 cathode发光二极管 light-emitting diode (LED)光电二极管 photodiode稳压二极管 Zener diode晶体管（三极管） transistorPNP型晶体管 PNP transistorNPN型晶体管 NPN transistor发射极 emitter集电极 collector基极 base电流放大系数 current amplification coefficient场效应管 field-effect transistor (FET)P沟道 p-channelN沟道 n-channel结型场效应管 junction FET（JFET）金属氧化物半导体 metal-oxide semiconductor (MOS)耗尽型MOS场效应管 depletion mode MOSFET（D-MOSFET）增强型MOS场效应管 enhancement mode MOSFET（E-MOSFET）源极 source栅极 grid漏极 drain跨导 transconductance夹断电压 pinch-off voltage热敏电阻 thermistor开路 open短路 shorted基本放大器放大器 amplifier正向偏置 forward bias反向偏置 backward bias静态工作点 quiescent point (Q-point)等效电路 equivalent circuit电压放大倍数 voltage gain总的电压放大倍数 overall voltage gain饱和 saturation截止 cut-off放大区 amplifier region饱和区 saturation region截止区 cut-off region失真 distortion饱和失真 saturation distortion截止失真 cut-off distortion零点漂移 zero drift正反馈 positive feedback负反馈 negative feedback串联负反馈 series negative feedback并联负反馈 parallel negative feedback共射极放大器 common-emitter amplifier射极跟随器 emitter-follower共源极放大器 common-source amplifier共漏极放大器 common-drain amplifier多级放大器 multistage amplifier阻容耦合放大器 resistance-capacitance coupled amplifier 直接耦合放大器 direct- coupled amplifier输入电阻 input resistance输出电阻 output resistance负载电阻 load resistance动态电阻 dynamic resistance负载电流 load current旁路电容 bypass capacitor耦合电容 coupled capacitor直流通路 direct current path交流通路 alternating current path直流分量 direct current component交流分量 alternating current component变阻器（电位器）rheostat电阻（器）resistor电阻（值）resistance电容（器）capacitor电容（量）capacitance电感（器，线圈）inductor电感（量），感应系数inductance正弦电压 sinusoidal voltage集成运算放大器及应用差动放大器 differential amplifier运算放大器 operational amplifier(op-amp)失调电压 offset voltage失调电流 offset current共模信号 common-mode signal差模信号 different-mode signal共模抑制比 common-mode rejection ratio (CMRR)积分电路 integrator（circuit）微分电路 differentiator（circuit）有源滤波器 active filter低通滤波器 low-pass filter高通滤波器 high-pass filter带通滤波器 band-pass filter带阻滤波器 band-stop filter波特沃斯滤波器 Butterworth filter切比雪夫滤波器 Chebyshev filter贝塞尔滤波器 Bessel filter截止频率 cut-off frequency上限截止频率 upper cut-off frequency下限截止频率 lower cut-off frequency中心频率 center frequency带宽 Bandwidth开环增益 open-loop gain闭环增益 closed-loop gain共模增益 common-mode gain输入阻抗 input impedance电压跟随器 voltage-follower电压源 voltage source电流源 current source单位增益带宽unity-gain bandwidth频率响应 frequency response频响特性（曲线）response characteristic 波特图 the Bode plot稳定性stability补偿 compensation比较器 comparator迟滞比较器 hysteresis comparator阶跃输入电压step input voltage仪表放大器 instrumentation amplifier隔离放大器 isolation amplifier对数放大器 log amplifier反对数放大器antilog amplifier反馈通道 feedback path反向漏电流 reverse leakage current相位phase相移 phase shift锁相环 phase-locked loop(PLL)锁相环相位监测器 PLL phase detector 和频 sum frequency差频 difference frequency波形发生电路振荡器 oscillatorRC振荡器 RC oscillatorLC振荡器 LC oscillator正弦波振荡器 sinusoidal oscillator三角波发生器 triangular wave generator方波发生器square wave generator幅度 magnitude电平level饱和输出电平（电压） saturated output level功率放大器功率放大器 power amplifier交越失真 cross-over distortion甲类功率放大器 class A power amplifier乙类推挽功率放大器class B push-pull power amplifier OTL功率放大器 output transformerless power amplifier OCL功率放大器 output capacitorless power amplifier 直流稳压电源半波整流 full-wave rectifier全波整流 half-wave rectifier电感滤波器 inductor filter电容滤波器 capacitor filter串联型稳压电源 series (voltage) regulator开关型稳压电源 switching (voltage) regulator集成稳压器 IC (voltage) regulator晶闸管及可控整流电路晶闸管 thyristor单结晶体管 unijunction transistor（UJT）可控整流 controlled rectifier可控硅 silicon-controlled rectifier峰点 peak point谷点 valley point控制角 controlling angle导通角 turn-on angle门电路与逻辑代数二进制 binary二进制数 binary number十进制 decimal十六进制 hexadecimal二-十进制 binary coded decimal （BCD）门电路 gate三态门tri-state gate与门 AND gate或门 OR gate非门 NOT gate与非门 NAND gate或非门 NOR gate异或门 exclusive-OR gate反相器 inverter布尔代数 Boolean algebra真值表 truth table卡诺图 the Karnaugh map逻辑函数 logic function逻辑表达式 logic expression组合逻辑电路组合逻辑电路 combination logic circuit 译码器 decoder编码器 coder比较器 comparator半加器 half-adder全加器 full-adder七段显示器 seven-segment display时序逻辑电路时序逻辑电路 sequential logic circuitR-S 触发器 R-S flip-flopD触发器 D flip-flopJ-K触发器 J-K flip-flop主从型触发器 master-slave flip-flop置位 set复位 reset直接置位端direct-set terminal直接复位端direct-reset terminal寄存器 register移位寄存器 shift register双向移位寄存器bidirectional shift register 计数器 counter同步计数器 synchronous counter异步计数器asynchronous counter加法计数器 adding counter减法计数器 subtracting counter定时器 timer清除（清0）clear载入 load时钟脉冲 clock pulse触发脉冲 trigger pulse上升沿 positive edge下降沿 negative edge时序图 timing diagram波形图 waveform脉冲波形的产生与整形单稳态触发器 monostable flip-flop双稳态触发器 bistable flip-flop无稳态振荡器 astable oscillator晶体 crystal555定时器 555 timer模拟信号与数字信号的相互转换模拟信号 analog signal数字信号 digital signalAD转换器analog -digital converter (ADC)DA转换器 digital-analog converter (DAC)半导体存储器只读存储器 read-only memory（ROM）随机存取存储器 random-access memory（RAM）可编程ROM programmable ROM（PROM）。
基于MCML的鉴相器设计
1引言锁相环广泛地应用于集成电路的设计、通信、雷达、测量等领域。
在数字集成电路和便携式的通信工具的设计当中，低功耗是一个重要的设计目标，节省能源，增加电池的使用时间。
鉴相器是锁相环中的重要组成部分，用来完成系统输入信号与压控振荡器的反馈时钟信号之间频率和相位的比较[1]。
传统静态CMOS电路由于其较大的逻辑输出摆幅以及较高的功耗，在高频应用的领域受到了一定的限制。
MOS电流模逻辑（MOS Current Mode Logic，MCML）电路作为MOS电路的一种差分的电路结构，在高频运行时，与传统的CMOS电路相比较，具有功耗较低，电路功耗与工作频率无关，电路抗干扰能力较强等特点[2]。
由于MCML电路的逻辑摆幅小，其逻辑转换速度也比传统的CMOS逻辑电路要快。
所以在高频电路的设计当中，MCML电路是一种较好的电路模块。
鉴频鉴相器是锁相环中的一个较为重要的模块，其工作速度以及功耗对整体电路的性能有着很大的影响。
锁相环的相位噪声、抖动、锁定时间等性能跟鉴相器的线性度、分辨率、鉴相带宽、鉴相灵敏度等有着直接的关系[3]。
本文第一部分，对MCML的基本反相器电路结构进行分析，得到功耗和频率的关系曲线，根据需求设计MCML逻辑电路，包括与门/与非门、锁存器，列出合适的宽长比，并对单元电路进行仿真分析，在相同的条件下与传统的CMOS单元电路进行延迟和功耗的对比；第二部分，基于SMIC0.18标准CMOS工艺库，用Cadence Virtuoso设计鉴相器，得出鉴相器的晶体管级电路图；第三部分，用Hspice对所设计的鉴相器进行仿真分析，输入的频率为1GHz，电源电压为1.8V，得到鉴相器的仿真波形，得到鉴相器的功耗。
第四部分，总结鉴相器的设计方法，对比所设计的MCML鉴相器和同结构下传统的CMOS鉴相器的性能和功耗等参数。
2MCML反相器MCML反相器电路结构，如图1所示。
由三部分组成：上拉负载电阻如图1中R D、下拉开关网络如图1中M1、M2电流源如图1中M S。
CMOS
CMOS是场效应管构成，TTL为双极晶体管构成COMS的逻辑电平范围比较大（5～15V），TTL只能在5V下工作CMOS的高低电平之间相差比较大、抗干扰性强，TTL则相差小，抗干扰能力差CMOS功耗很小，TTL功耗较大（1～5mA/门）CMOS的工作频率较TTL略低，但是高速CMOS速度与TTL差不多相当。
功耗TTL门电路的空载功耗与CMOS门的静态功耗相比，是较大的，约为数十毫瓦（mw）而后者仅约为几十纳(10-9)瓦；在输出电位发生跳变时（由低到高或由高到低）,TTL和CMOS门电路都会产生数值较大的尖峰电流，引起较大的动态功耗。
速度通常以为TTL门的速度高于“CMOS门电路。
影响 TTL门电路工作速度的主要因素是电路内部管子的开关特性、电路结构及内部的各电阻阻数值。
电阻数值越大，工作速度越低。
管子的开关时间越长，门的工作速度越低。
门的速度主要体现在输出波形相对于输入波形上有“传输延时”tpd。
将tpd与空载功耗P 的乘积称为“速度-功耗积”，做为器件性能的一个重要指标，其值越小，表明器件的性能越好（一般约为几十皮（10-12）焦耳）。
与TTL门电路的情况不同，影响CMOS电路工作速度的主要因素在于电路的外部，即负载电容CL。
CL是主要影响器件工作速度的原因。
由CL所决定的影响CMOS门的传输延时约为几十纳秒。
关于CMOS逻辑门电路与TTL逻辑门电路使用的问题1、CMOS逻辑门电路与TTL电路相比有哪些优点？与TTL电路相比，CMOS逻辑门静态功耗小；允许电源电压范围宽；扇出系数大；抗噪容限大；带负载能力强；集成度等。
从发展趋势来看，由于制造工艺的改进和上述优点，CMOS电路的性能有可能超越TTL而成为占主要地位的逻辑器件。
2、TTL集成门电路使用注意事项（1）电源电压对于74系列应满足5V+5%的范围内，对于54系列应满足5V+10%的范围内；电源不能接反；为防止外来干扰通过电源串入电路，需要对电源进行滤波，通常在印刷电路板有电源输入端接入10μF~100μF电解电容进行滤波，每隔6~8个门加接一个0.01μF~0.1μF的瓷介电容对高频进行滤波。
mos的闩锁效应
LECTURE 080 – LATCHUP AND ESDLECTURE ORGANIZATIONOutline• Latchup• ESD• SummaryCMOS Analog Circuit Design, 2nd Edition ReferencePages 48-52 and new materialCMOS Analog Circuit Design© P.E. Allen - 2010CMOS Analog Circuit Design © P.E. Allen - 2010Guidelines for Guard Rings• Guard rings should be low resistance paths.• Guard rings should utilize continuous diffusion areas.• More than one transistor of the same type can be placed inside the same well inside the same guard ring as long as the design rules for spacing are followed.• Only 2 guard rings are required between adjacent PMOS and NMOS transistors• The well taps and/or the guard ring should be laid out as close to the MOSFET source as possible.• I/O output NMOSFET should use butted composite for source to bulk connections when the source is electrically connected to the p -well tap. If separate well tap and source connections are required due to substrate noise injection problems, minimize the source-well tap spacing. This will minimize latch up and early snapback of the output MOSFETs with the drain diffusion tied directly (in metal) to the bond pad.Lecture 080 – Latchup and ESD (3/24/10)Page 080-20ESD IN CMOS TECHNOLOGYWhat is Electrostatic Discharge?Triboelectric charging happens when 2 materials come in contact and then are separated.An ESD event occurs when the stored charge is discharged.Lecture 080 – Latchup and ESD (3/24/10)Page 080-24 ESD Influence on ComponentsAn ESD event typically creates very high values of current (1-10A) for very short periods of time (150 ns) with very rapid rise times (1ns).Therefore, components experience extremely high values of current with very little power dissipation or thermal effects.Resistors – become nonlinear at high currents and will breakdownCapacitors – become shorts and can breakdown from overvoltage (pad to substrate) Diodes – current no longer flows uniformly (the connections to the diodes represent the ohmic resistance limit)Transistors – ESD event is only a two terminal event, the third terminal is influenced by parasitics and many of the transistor parameters are poorly controlled.• MOSFETs – the parasitic bipolar experiences snapback under an ESD event• BJTs – will experience snapback under ESD eventCMOS Analog Circuit Design © P.E. Allen - 2010ESD PracticeGeneral Guidelines:• Understand the current flow requirements for an ESD event• Make sure the current flows where desired and is uniformly distributed • Series resistance is used to limit the current in the protected devices • Minimize the resistance in protecting devices• Use distributed (smaller) active clamps to minimize the effect of bus resistance • Understand the influence of packaging on ESD • Use guard rings to prevent latchup Check list:• Check the ESD path between every pair of pads• Check for ESD protection between the pad and internal circuitry • Check for low bus resistance- Current: Minimum metal for ESD 40 x Electromigration limit- Voltage: 1.5A in a metal bus of 0.03 /square of 1000μm long and 30μm wide givesa voltage drop of 1.5V• Check for sufficient contacts and vias in the ESD path (uniform current distribution)Lecture 080 – Latchup and ESD (3/24/10)Page 080-32SUMMARY• Latchup is the creation of a low impedance path between the power supply rails resulting in excessive current.• The conditions for latchup are:- A four-layer, pnpn structure connected between power supply rails - An injector (any diffusion connected to a pad)- A stimulus• Latchup is prevented by:- Keeping the NMOS and PMOS transistors separated - Reducing the well resistance with appropriate well ties - Surrounding the transistors with guard rings• ESD is caused by triobelectric charging which discharges through the IC when the power is off• The current produced by an ESD event must be controlled – uniform current flow,minimum voltage drop, and must not flow through sensitive circuitry• An ESD event turns on very quickly (<1ns), has a high peak current (1A), and lasts for approximately 100 ns.• ESD clamps consist of breakdown clamps (snapback) and non-breakdown clamps.。
MOS电流模逻辑电路的设计方法和流程
MOS电流模逻辑电路的设计方法和流程作者：廖安平梁蓓来源：《科技资讯》2012年第14期摘要:本文主要介绍了MOS电流模逻辑电路的特点与整个设计流程中主要的要点和方法,以便今后在设计过程中引起人们对于MOS晶体管使用的重视。
关键词:晶体管设计 MOS电流模逻辑电路中图分类号:TM13 文献标识码:A 文章编号:1672-3791(2012)05(b)-0133-01随着微电子技术的迅猛发展以及手机、数码相机、电脑等便携电子产品的迅速普及与不断发展,MOS电流模逻辑电路的已经得到了广泛的应用于推广。
与传统的电压模式控制相比,电路模式控制具有更快的瞬间反应与良好的闭环稳定性,且周期性的过流关断更好的保护着设备与其他器材。
MOS电流模逻辑电路作为重要的器件除了有着以上的优点之外,还拥有着高频下降低功率,抗干扰、高速、低功率等特点。
1 MOS电路模逻辑电路设计特点1.1 MOS管电路的结构特性从MOS管的主要特性可知,MOS管电路不但工作的基本条件依赖于直流偏置,其使得MOS 管一直工作在一个固定直流工作点上,而电路的功能只要是处理交流信号,例如对于交流电的信号放大。
根据MOS管电路和信号的特点,就可以直接去确定提供的直流通道和交流通道的过程,即时使用MOS管电路中可以同时处理直流信号与交流信号,两种状态的电流通道可以同时存在于同一个MOS管电路当中。
(1)直流通道提供了电路的工作基础,没有直流通道电路就不能正常工作。
同时,直流通道所引起的电路工作状态叫做电路的静态,电路的静态是分析电路的基础。
(2)交流通道提供了电路的基本功能特征,交流通道所引起的电路交流状态以静态为基础。
不同的静态将会引起不同的交流状态特征,例如电流和电压的变化范围。
从上分析可知,MOS管电路的静态设计直接决定了电路的特性,而实际上使用MOS管的电流镜、差分电路、有源负载等都有上述功能,也就是我们可以使用MOS管的静态特性来确保电路的稳定与保证电路开关不受到影响。
微电子专业英语词汇
微电子专业英语词汇 IMB standardization office【IMB 5AB- IMBK 08- IMB 2C】Abrupt junction 突变结['brpt] 突然的；Accelerated testing 加速实验[k'selreitid]Acceptor 受主 Acceptor atom 受主原子['tm] n. 原子Accumulation [,kju:mju'lein]积累,堆积Accumulating contact(n. 接触，联系)积累接触Accumulation region['ri:dn]地区积累区 Accumulation layer['lei] 层积累层Active region 有源区['ktiv]积极的,有源的 Active component [km'punnt]元件有源元Active device 有源器件 Activation 激活Activation energy 激活能 Active region 有源（放大）区Admittance [d'mitns]导纳 Allowed band [b?nd]带允带Alloy-junction device ['l]合金结器件 Aluminum(Aluminium) ['lju:minm]铝Aluminum – oxide ['ksaid]铝氧化物 Aluminum passivation [psi'vein]钝化铝钝化Ambipolar [,mbi'pul]双极的 Ambient temperature ['mbint]环境温度Amorphous ['m:fs]无定形的，非晶体的 Amplifier ['mplifai]功放扩音器放大器Analogue(Analog) ['nlɡ] comparator ['kmpreit]模拟比较器 Angstrom ['strm]埃Anneal ['ni:l]退火 Anisotropic [n,aisu'trpik]各向异性的Anode ['nud]阳极 Arsenic ['ɑ:s?nik (AS) 砷Auger [':ɡ]俄歇 Auger process 俄歇过程Avalanche ['vlɑ:nt]雪崩 Avalanche breakdown(击穿) 雪崩击穿Avalanche excitation [,eksi'tei?n](激发)雪崩激发Background(背景,本底,基底) carrier 本底载流子 Background doping 本底掺杂Backward ['bkwd]反向 Backward bias ['bai?s](偏置,)偏爱反向偏置Ballasting ['blst] resistor 整流电阻 Ball bond [b?nd](结合)球形键合Band 能带 Band gap [ɡ?p](间隙)能带间隙Barrier 势垒 Barrier layer 势垒层Barrier ['bri] width 势垒宽度 Base 基极Base contact 基区接触 Base stretching 基区扩展效应Base transit(运输)time基区渡越时间 Base transport efficiency [i'fi?nsi](效率)基区输运系数Base-width modulation [,mdju'lein(调制)基区宽度调制 Basis vector ['vekt]矢量基矢Bias 偏置 Bilateral [,bai'ltrl] switch 双向开关Binary ['bain?ri]code(代码)二进制代码Binary compound semiconductor二元化合物半导体Bipolar [bai'pul]双极性的 Bipolar Junction Transistor (晶体管)(BJT)双极晶体管Bloch [bl?k]布洛赫 Blocking ['blki]（截止，阻塞） band 阻挡能带Blocking contact 阻挡接触 Body（身体，主题） - centered（居中的）体心立方Body-centred cubic ['kju:bik]立方体structure ['strkt]结构体立心结构 Boltzmann 波尔兹曼Bond 键、键合 Bonding electron 价电子Bonding pad 键合点 Bootstrap circuit ['s:kit]电路自举电路Bootstrapped emitter [i'mit]发射器 follower（追随者）自举射极跟随器 Boron ['b:rn]硼Borosilicate [,b:ru'silikit]硼硅酸盐 glass 硼硅玻璃 Boundary condition 边界条件Bound electron 束缚电子 Breadboard 模拟板、实验板Break down 击穿 Break over 转折Brillouin 布里渊 Brillouin zone 布里渊区Built-in 内建的 Build-in electric field 内建电场Bulk [b?lk]体/体内 Bulk absorption 体吸收Bulk generation 体产生 Bulk recombination [,ri:kmbi'nein]体复合Burn - in 老化 Burn out 烧毁Buried ['berid]埋葬的 channel埋沟 Buried diffusion扩散 region 隐埋扩散区Can 外壳 Capacitance[k'p?st()ns]电容Capture俘获 cross section 俘获截面 Capture carrier 俘获载流子Carrier 载流子、载波 Carry bit 进位位Carry-in bit 进位输入 Carry-out bit 进位输出Cascade [k?s'keid]级联，串联级联 Case 管壳Cathode['kθud]阴极 Center 中心Ceramic [si'r?mik]陶瓷（的） Channel['tnl] (频道)沟道Channel breakdown 沟道击穿 Channel current 沟道电流Channel doping 沟道掺杂 Channel shortening 沟道缩短Channel width 沟道宽度 Characteristic impedance[im'pi:d?ns]特征阻抗Charge (控告)电荷,充电 Charge-compensation[,kmpen'sein](补偿) effects 电荷补偿效应Charge conservation(保存,保持) 电荷守恒Charge neutrality[nju'trlt](中性) condition电中性条件Charge drive/exchange/sharing/transfer/storage 电荷驱动/交换/共享/转移/存储Chemmical etching[nju'trlt]化学腐蚀法 Chemically-Polish['pl]（磨光）化学抛光Chemmically-Mechanically [m'knkl]（机械地）Polish (CMP) 化学机械抛光 Chip 芯片Chip yield（产量）芯片成品率 Clamped 箝位Clamping diode 箝位二极管 Cleavage['klivd] plane（平面）解理面Clock rate（比率）时钟频率 Clock generator 时钟发生器Clock flip-flop（触发器）时钟触发器 Close-packed structure（构造）密堆积结构Close-loop（环） gain（获利，增加）闭环增益 Collector 集电极Collision[k'l()n]（冲突）碰撞 Compensated（补偿） OP-AMP 补偿运放Common-base/collector/emitter connection 共基极/集电极/发射极连接Common-gate/drain/source connection 共栅/漏/源连接Common-mode gain 共模增益 Common-mode input 共模输入Common-mode rejection（抑制，拒绝）ratio (CMRR) 共模抑制比Compatibility[km,pt'blt]兼容性 Compensation 补偿Compensated impurities（杂质）补偿杂质 Compensated semiconductor 补偿半导体Complementary（补足的） Darlington circuit（电路，回路）互补达林顿电路Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor（晶体管）(CMOS) 互补金属氧化物半导体场效应晶体管Complementary error function（功能，函数）余误差函数Computer-aided【辅助的】design (CAD)/test(CAT)/manufacture(CAM)Compound['kmpand] Semiconductor 化合物半导体 Conductance[kn'dkt()ns]电导Conduction（传导band (edge) 导带(底) Conduction level/state 导带态Conductor 导体 Conductivity 电导率Configuration（配置）组态 Conlomb['kulm]库仑Conpled Configuration Devices 结构组态 Constants（常量，常数）物理常数Constant energy surface 等能面 Constant-source diffusion（扩散，传播）恒定源扩散Contact（联系，接触）接触 Contamination[kn,tm'nen]玷污Continuity[,knt'njut]（连续性）equation（方程式，等式）连续性方程Contact hole孔接触孔Contact potential（潜能，潜在的）接触电势 Continuity condition 连续性条件Contra['kntr]相反 doping 反掺杂 Controlled 受控的Converter[kn'vt]（converter转变，转换）转换器 Conveyer[kn've]传输器Copper（铜） interconnection[,ntk'nkn]（互联） system 铜互连系统 Couping 耦合Covalent[k'vel()nt]（共价的）共阶的 Crossover 跨交Critical （批评的）临界的 Crossunder 穿交Crucible['krusb()l]坩埚Crystal defect缺陷/face/orientation/lattice 晶体缺陷/晶面/晶向/晶格Current density（密度）电流密度 Curvature'kvt曲率Cut off 截止Current drift（漂移）/dirve/sharing电流漂移/驱动/共享Current Sense（感觉，检测）电流取样 Curvature 弯曲Custom（风俗，习惯，定制的integrated circuit 定制集成电路 Cylindrical 柱面的Czochralshicrystal 直立单晶crystal（晶体，单晶）Czochralski technique 切克劳斯基技术（Cz 法直拉晶体 J）Dangling ['d?g()l;bonds 悬挂键 Dark current 暗电流Dead time 空载时间 Debye length 德拜长度德布洛意 Decderate 减速Decibel ['des?bel] (dB) 分贝 Decode 译码Deep acceptor level 深受主能级 Deep donor['dn（捐赠者level 深施主能级Deep impurity（杂质，不存，不洁）level 深度杂质能级 Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 简并半导体 Degeneracy 简并度Degradation[,degr'de()n]退化 Degree Celsius(centigrade) /Kelvin 摄氏/开氏温度Delay 延迟 Density 密度Density of states 态密度 Depletion 耗尽Depletion approximation 耗尽近似 Depletion contact 耗尽接触Depletion depth 耗尽深度 Depletion effect 耗尽效应Depletion layer 耗尽层 Depletion MOS 耗尽 MOSDepletion region 耗尽区 Deposited film(电影，薄膜) 淀积薄膜Deposition process 淀积工艺 Design rules 设计规则Die 芯片（复数 dice） Diode 二极管Dielectric 介电的 Dielectric isolation（隔离。
CML_buffer_ISQED
Design and Analysis of Low-Voltage Current-Mode Logic Buffers
Payam Heydari Department of Electrical and Computer Engineering
University of California, Irvine Irvine, CA 92697-2625
半导体微电子专业词汇中英文对照
半导体微电子专业词汇中英文对照Accelerated testing 加速实验Acceptor 受主Acceptor atom 受主原子Accumulation 积累、堆积Accumulating contact 积累接触Accumulation region 积累区Accumulation layer 积累层Acoustic Surface Wave 声表面波Active region 有源区Active component 有源元Active device 有源器件Activation 激活Activation energy 激活能Active region 有源（放大）区A/D conversion 模拟-数字转换Adhesives 粘接剂Admittance 导纳Aging 老化Airborne 空载Allowed band 允带allowance 容限，公差Alloy-junction device合金结器件Aluminum(Aluminum) 铝Aluminum – oxide 铝氧化物Aluminum Nitride 氮化铝Aluminum passivation 铝钝化Ambipolar 双极的Ambient temperature 环境温度A M light 振幅调制光，调幅光amplitude limiter 限幅器Amorphous 无定形的，非晶体的Amplifier 功放放大器Analogue(Analog) comparator 模拟比较器Angstrom 埃Anneal 退火Anisotropic 各向异性的Anode 阳极Antenna 天线Aperture 孔径Arsenide (As) 砷Array 阵列Atomic 原子的Atom Clock 原子钟Attenuation 衰减Audio 声频Auger 俄歇Automatic 自动的Automotive 汽车的Availability 实用性Avalanche 雪崩Avalanche breakdown 雪崩击穿Avalanche excitation雪崩激发Background carrier 本底载流子Background doping 本底掺杂Backward 反向Backward bias 反向偏置Ball bond 球形键合Band 能带Band gap 能带间隙Bandwidth 带宽Bar 巴条发光条Barrier 势垒Barrier layer 势垒层Barrier width 势垒宽度Base 基极Base contact 基区接触Base stretching 基区扩展效应Base transit time 基区渡越时间Base transport efficiency基区输运系数Base-width modulation基区宽度调制Batch 批次Battery 电池Beam 束光束电子束Bench 工作台Bias 偏置Bilateral switch 双向开关Binary code 二进制代码Binary compound semiconductor 二元化合物半导体Bipolar 双极性的Bipolar Junction Transistor (BJT)双极晶体管Bit 位比特Blocking band 阻带Body - centered 体心立方Body-centred cubic structure 体立心结构Boltzmann 波尔兹曼Bond 键、键合Bonding electron 价电子Bonding pad 键合点Boron 硼Borosilicate glass 硼硅玻璃Bottom-up 由下而上的Boundary condition 边界条件Bound electron 束缚电子Bragg effect 布拉格效应Breadboard 模拟板、实验板Break down 击穿Break over 转折Brillouin 布里渊 FBrillouin zone 布里渊区Buffer 缓冲器Built-in 内建的Build-in electric field 内建电场Bulk 体/体内Bulk absorption 体吸收Bulk generation 体产生Bulk recombination 体复合Burn-in 老化Burn out 烧毁Buried channel 埋沟Buried diffusion region 隐埋扩散区Bus 总线Calibration 校准，检定，定标、刻度，分度Capacitance 电容Capture cross section 俘获截面Capture carrier 俘获载流子Carbon dioxide (CO2) 二氧化碳Carrier 载流子、载波Carry bit 进位位Cascade 级联Case 管壳Cathode 阴极Cavity 腔体Center 中心Ceramic 陶瓷（的）Channel 沟道Channel breakdown 沟道击穿Channel current 沟道电流Channel doping 沟道掺杂Channel shortening 沟道缩短Channel width 沟道宽度Characteristic impedance 特征阻抗Charge 电荷、充电Charge-compensation effects 电荷补偿效应Charge conservation 电荷守恒Charge drive/exchange/sharing/transfer/storage 电荷驱动/交换/共享/转移/存储Chemical etching 化学腐蚀法Chemically-Polish 化学抛光Chemically-Mechanically Polish (CMP) 化学机械抛光Chemical vapor deposition (cvd)化学汽相淀积Chip 芯片Chip yield 芯片成品率Circuit 电路Clamped 箝位Clamping diode 箝位二极管Cleavage plane 解理面Clean 清洗Clock rate 时钟频率Clock generator 时钟发生器Clock flip-flop 时钟触发器Close-loop gain 闭环增益Coating 涂覆涂层Coefficient of thermal expansion 热膨胀系数Coherency 相干性Collector 集电极Collision 碰撞Compensated OP-AMP 补偿运放Common-base/collector/emitter connection 共基极/集电极/发射极连接Common-gate/drain/source connection 共栅/漏/源连接Common-mode gain 共模增益Common-mode input 共模输入Common-mode rejection ratio (CMRR) 共模抑制比Communication 通信Compact 致密的Compatibility 兼容性Compensation 补偿Compensated impurities 补偿杂质Compensated semiconductor 补偿半导体Complementary Darlington circuit 互补达林顿电路Complementary Metal-Oxide-SemiconductorField-Effect-Transistor(CMOS) 互补金属氧化物半导体场效应晶体管Computer-aided design(CAD)/test(CAT)/manufacture(CAM) 计算机辅助设计/ 测试 /制造Component 元件Compound Semiconductor 化合物半导体Conductance 电导Conduction band (edge) 导带(底)Conduction level/state 导带态Conductor 导体Conductivity 电导率Configuration 结构Conlomb 库仑Constants 物理常数Constant energy surface 等能面Constant-source diffusion恒定源扩散Contact 接触Continuous wave 连续波Continuity equation 连续性方程Contact hole 接触孔Contact potential 接触电势Controlled 受控的Converter 转换器Conveyer 传输器Cooling 冷却Copper interconnection system 铜互连系统Corrosion 腐蚀Coupling 耦合Covalent 共阶的Crossover 交叉Critical 临界的Cross-section 横断面Crucible坩埚Cryogenic cooling system 冷却系统Crystal defect/face/orientation/lattice 晶体缺陷/晶面/晶向/晶格Cubic crystal system 立方晶系Current density 电流密度Curvature 曲率Current drift/drive/sharing 电流漂移/驱动/共享Current Sense 电流取样Curve 曲线Custom integrated circuit 定制集成电路Cut off 截止Cylindrical 柱面的Czochralshicrystal 直立单晶Czochralski technique 切克劳斯基技术（Cz法直拉晶体J）)Dangling bonds 悬挂键Dark current 暗电流Dead time 空载时间Decade 十进制Decibel (dB) 分贝Decode 解码Deep acceptor level 深受主能级Deep donor level 深施主能级Deep energy level 深能级Deep impurity level 深度杂质能级Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 简并半导体Degeneracy 简并度Degradation 退化Degree Celsius(centigrade) /Kelvin 摄氏/开氏温度Delay 延迟Density 密度Density of states 态密度Depletion 耗尽Depletion approximation 耗尽近似Depletion contact 耗尽接触Depletion depth 耗尽深度Depletion effect 耗尽效应Depletion layer 耗尽层Depletion MOS 耗尽MOS Depletion region 耗尽区Deposited film 淀积薄膜Deposition process 淀积工艺Design rules 设计规则Detector 探测器Developer 显影剂Diamond 金刚石Die 芯片（复数dice）Diode 二极管Dielectric Constant 介电常数Dielectric isolation 介质隔离Difference-mode input 差模输入Differential amplifier 差分放大器Differential capacitance 微分电容Diffraction 衍射Diffusion 扩散Diffusion coefficient 扩散系数Diffusion constant 扩散常数Diffusivity 扩散率Diffusion capacitance/barrier/current/furnace 扩散电容/势垒/电流/炉Digital circuit 数字电路Dimension (1)尺寸(2)量钢(3)维，度Diode 二极管Dipole domain 偶极畴Dipole layer 偶极层Direct-coupling 直接耦合Direct-gap semiconductor 直接带隙半导体Direct transition 直接跃迁Directional antenna 定向天线Discharge 放电Discrete component 分立元件Disorder 无序的Display 显示器Dissipation 耗散Dissolution 溶解Distribution 分布Distributed capacitance 分布电容Distributed model 分布模型Displacement 位移Dislocation 位错Domain 畴Donor 施主Donor exhaustion 施主耗尽Dopant 掺杂剂Doped semiconductor 掺杂半导体Doping concentration 掺杂浓度Dose 剂量Double-diffusive MOS(DMOS)双扩散MOS Drift 漂移Drift field 漂移电场Drift mobility 迁移率Dry etching 干法腐蚀Dry/wet oxidation 干/湿法氧化Dose 剂量Dual-polarization 双偏振，双极化Duty cycle 工作周期Dual-in-line package （DIP）双列直插式封装Dynamics 动态Dynamic characteristics 动态属性Dynamic impedance 动态阻抗Early effect 厄利效应Early failure 早期失效Effect 效应Effective mass 有效质量Electric Erase Programmable Read Only Memory(E2PROM) 电可擦除只读存储器Electrode 电极Electromigration 电迁移Electron affinity 电子亲和势Electron-beam 电子束Electroluminescence 电致发光Electron gas 电子气Electron trapping center 电子俘获中心Electron Volt (eV) 电子伏Electro-optical 光电的Electrostatic 静电的Element 元素/元件/配件Elemental semiconductor 元素半导体Ellipse 椭圆Emitter 发射极Emitter-coupled logic 发射极耦合逻辑Emitter-coupled pair 发射极耦合对Emitter follower 射随器Empty band 空带Emitter crowding effect 发射极集边（拥挤）效应Endurance test =life test 寿命测试Energy state 能态Energy momentum diagram 能量-动量(E-K)图Enhancement mode 增强型模式Enhancement MOS 增强性MOSEnteric (低)共溶的Environmental test 环境测试Epitaxial 外延的Epitaxial layer 外延层Epitaxial slice 外延片Epoxy 环氧的Equivalent circuit 等效电路Equilibrium majority /minority carriers 平衡多数/少数载流子Equipment 设备Erasable Programmable ROM (EPROM)可搽取（编程）存储器Erbium laser 掺铒激光器Error function complement 余误差函数Etch 刻蚀Etchant 刻蚀剂Etching mask 抗蚀剂掩模Excess carrier 过剩载流子Excitation energy 激发能Excited state 激发态Exciton 激子Exponential 指数的Extrapolation 外推法Extrinsic 非本征的Extrinsic semiconductor 杂质半导体Fabry-Perot amplifier 法布里-珀罗放大器Face - centered 面心立方Fall time 下降时间Fan-in 扇入Fan-out 扇出Fast recovery 快恢复Fast surface states 快表面态Feedback 反馈Fermi level 费米能级Femi potential 费米势Fiber optic 光纤Field effect transistor 场效应晶体管Field oxide 场氧化层Figure of merit 品质因数Filter 滤波器Filled band 满带Film 薄膜Fine pitch 细节距Flash memory 闪存存储器Flat band 平带Flat pack 扁平封装Flatness 平整度Flexible 柔性的Flicker noise 闪烁（变）噪声Flip-chip 倒装芯片Flip- flop toggle 触发器翻转Floating gate 浮栅Fluoride etch 氟化氢刻蚀Focal plane 焦平面Forbidden band 禁带Formulation 列式，表达Forward bias 正向偏置Forward blocking /conducting 正向阻断/导通Free electron 自由电子Frequency deviation noise 频率漂移噪声Frequency response 频率响应Function 函数Gain 增益Gallium-Arsenide(GaAs) 砷化镓Gallium Nitride 氮化镓Gate 门、栅、控制极Gate oxide 栅氧化层Gate width 栅宽Gauss（ian）高斯Gaussian distribution profile 高斯掺杂分布Generation-recombination 产生-复合Geometries 几何尺寸Germanium(Ge) 锗Gold 金Graded 缓变的Graded (gradual) channel 缓变沟道Graded junction 缓变结Grain 晶粒Gradient 梯度Graphene 石墨烯Grating 光栅Green laser 绿光激光器Ground 接地Grown junction 生长结Guard ring 保护环Guide wave 导波波导Gunn - effect 狄氏效应Gyroscope 陀螺仪Hardened device 辐射加固器件Harmonics 谐波Heat diffusion 热扩散Heat sink 散热器、热沉Heavy/light hole band 重/轻空穴带Hell - effect 霍尔效应Hertz 赫兹Heterojunction 异质结Heterojunction structure 异质结结构Heterojunction Bipolar Transistor（HBT）异质结双极型晶体High field property 高场特性High-performance MOS(H-MOS)高性能MOS器件High power 大功率Hole 空穴Homojunction 同质结Horizontal epitaxial reactor 卧式外延反应器Hot carrier 热载流子Hybrid integration 混合集成Illumination (1)照明(2)照明学Image - force 镜象力Impact ionization 碰撞电离Impedance 阻抗Imperfect structure 不完整结构Implantation dose 注入剂量Implanted ion 注入离子Impurity 杂质Impurity scattering 杂志散射Inch 英寸Incremental resistance 电阻增量（微分电阻）In-contact mask 接触式掩模Index of refraction 折射率Indium 铟Indium tin oxide (ITO) 铟锡氧化物Inductance 电感Induced channel 感应沟道Infrared 红外的Injection 注入Input power 输入功率Insertion loss 插入损耗Insulator 绝缘体Insulated Gate FET(IGFET) 绝缘栅FET Integrated injection logic 集成注入逻辑Integration 集成、积分Integrated Circuit 集成电路Interconnection 互连Interconnection time delay 互连延时Interdigitated structure 交互式结构Interface 界面Interference 干涉International system of unions 国际单位制Internally scattering 谷间散射Interpolation 内插法Intrinsic 本征的Intrinsic semiconductor 本征半导体Inverse operation 反向工作Inversion 反型Inverter 倒相器Ion 离子Ion beam 离子束Ion etching 离子刻蚀Ion implantation 离子注入Ionization 电离Ionization energy 电离能Irradiation 辐照Isolation land 隔离岛Isotropic 各向同性Junction FET(JFET) 结型场效应管Junction isolation 结隔离Junction spacing 结间距Junction side-wall 结侧壁Laser 激光器Laser diode 激光二极管Latch up 闭锁Lateral 横向的Lattice 晶格Layout 版图Lattice binding/cell/constant/defect/distortion 晶格结合力/晶胞/晶格/晶格常熟/晶格缺陷/晶格畸变Lead 铅Leakage current （泄）漏电流Life time 寿命linearity 线性度Linked bond 共价键Liquid Nitrogen 液氮Liquid－phase epitaxial growth technique 液相外延生长技术Lithography 光刻Light Emitting Diode(LED) 发光二极管Linearity 线性化Liquid 液体Lock in 锁定Longitudinal 纵向的Long life 长寿命Lumped model 集总模型Magnetic 磁的Majority carrier 多数载流子Mask 掩膜板，光刻板Mask level 掩模序号Mask set 掩模组Mass - action law 质量守恒定律Master-slave D flip-flop 主从D 触发器Matching 匹配Material 材料Maxwell 麦克斯韦Mean free path 平均自由程Mean time before failure (MTBF) 平均工作时间Mechanical 机械的Membrane (1)薄腊，膜片(2)隔膜Megeto - resistance 磁阻Mesa 台面MESFET-Metal Semiconductor 金属半导体FET Metalorganic Chemical Vapor Deposition MOCVD 金属氧化物化学汽相淀积Metallization 金属化Metal oxide semiconductor (MOS)金属氧化物半导体MeV 兆电子伏Microelectronic technique 微电子技术Microelectronics 微电子学Microelectromechanical System (MEMS) 微电子机械系统Microwave 微波Millimeterwave 毫米波Minority carrier 少数载流子Misfit 失配Mismatching 失配Mobility 迁移率Module 模块Modulate 调制Molecular crystal 分子晶体Monolithic IC 单片MOSFET 金属氧化物半导体场效应晶体管Mount 安装Multiplication 倍增Modulator 调制Multi-chip IC 多芯片ICMulti-chip module(MCM) 多芯片模块Multilayer 多层Multiplication coefficient 倍增因子Multiplexer 复用器Multiplier 倍增器Naked chip 未封装的芯片（裸片）Nanometer 纳米Nanotechnology 纳米技术Negative feedback 负反馈Negative resistance 负阻Negative-temperature-coefficient负温度系数Nesting 套刻Noise figure 噪声系数Nonequilibrium 非平衡Nonvolatile 非挥发（易失）性Normally off/on 常闭/开Nuclear 核Numerical analysis 数值分析Occupied band 满带Offset 偏移、失调On standby 待命状态Ohmic contact 欧姆接触Open circuit 开路Operating point 工作点Operating bias 工作偏置Operational amplifier (OPAMP)运算放大器Optical photon 光子Optical quenching 光猝灭Optical transition 光跃迁Optical-coupled isolator 光耦合隔离器Organic semiconductor 有机半导体Orientation 晶向、定向Oscillator 振荡器Outline 外形Out-of-contact mask 非接触式掩模Output characteristic 输出特性Output power 输出功率Output voltage swing 输出电压摆幅Overcompensation 过补偿Over-current protection 过流保护Over shoot 过冲Over-voltage protection 过压保护Overlap 交迭Overload 过载Oscillator 振荡器Oxide 氧化物Oxidation 氧化Oxide passivation 氧化层钝化Package 封装Pad 压焊点Parameter 参数Parasitic effect 寄生效应Parasitic oscillation 寄生振荡Pass band 通带Passivation 钝化Passive component 无源元件Passive device 无源器件Passive surface 钝化界面Parasitic transistor 寄生晶体管Pattern 图形Payload 有效载荷Peak-point voltage 峰点电压Peak voltage 峰值电压Permanent-storage circuit 永久存储电路Period 周期Permeable - base 可渗透基区Phase-lock loop 锁相环Phase drift 相移Phonon spectra 声子谱Photo conduction 光电导Photo diode 光电二极管Photoelectric cell 光电池Photoelectric effect 光电效应Photonic devices 光子器件Photolithographic process 光刻工艺Photoluminescence 光致发光Photo resist （光敏）抗腐蚀剂Photo mask 光掩模Piezoelectric effect 压电效应Pin 管脚Pinch off 夹断Pinning of Fermi level 费米能级的钉扎（效应）Planar process 平面工艺Planar transistor 平面晶体管Plasma 等离子体Plane 平面的Plasma 等离子体Plate 板电路板P-N junction pn结Poisson equation 泊松方程Point contact 点接触Polarity 极性Polycrystal 多晶Polymer semiconductor 聚合物半导体Poly-silicon 多晶硅Positive 正的Potential (电)势Potential barrier 势垒Potential well 势阱Power electronic devices电力电子器件Power dissipation 功耗Power transistor 功率晶体管Preamplifier 前置放大器Primary flat 主平面Print-circuit board(PCB) 印制电路板Probability 几率Probe 探针Procedure 工艺Process 工艺Projector 投影仪Propagation delay 传输延时Proton 质子Proximity effect 邻近效应Pseudopotential method 赝势法Pump 泵浦Punch through 穿通Pulse triggering/modulating 脉冲触发/调制Pulse Widen Modulator(PWM) 脉冲宽度调制Punchthrough 穿通Push-pull stage 推挽级Q Q值Quality factor 品质因子Quantization 量子化Quantum 量子Quantum efficiency 量子效应Quantum mechanics 量子力学Quasi – Fermi－level 准费米能级Quartz 石英Radar 雷达Radiation conductivity 辐射电导率Radiation damage 辐射损伤Radiation flux density 辐射通量密度Radiation hardening 辐射加固Radiation protection 辐射保护Radiative - recombination 辐照复合Radio 无线电射电射频Radio-frequency RF 射频Raman 拉曼Random 随机Range 测距Radio 比率系数Ray 射线Reactive sputtering source 反应溅射源Real time 实时Receiver 接收机Recombination 复合Recovery diode 恢复二极管Record 记录Recovery time 恢复时间Rectifier 整流器（管）Rectifying contact 整流接触Red light 红光Reference 基准点基准参考点Refractive index 折射率Register 寄存器Regulate 控制调整Relative 相对的Relaxation 驰豫Relaxation lifetime 驰豫时间Relay 中继Reliability 可靠性Remote 远程Repeatability 可重复性Reproduction 重复制造Residual current 剩余电流Resonance 谐振Resin 树脂Resistance 电阻Resistor 电阻器Resistivity 电阻率Regulator 稳压管（器）Resolution 分辨率Response time 响应时间Return signal 回波信号Reverse 反向的Reverse bias 反向偏置Ribbon 光纤带Ridge waveguide 脊形波导Ring laser 环形激光器Rotary wave 旋转波Run 运行Sampling circuit 取样电路Sapphire 蓝宝石（Al2O3）Satellite valley 卫星谷Saturated current range 电流饱和区Scan 扫描Scaled down 按比例缩小Scattering 散射Schematic layout 示意图，简图Schottky 肖特基Schottky barrier 肖特基势垒Schottky contact 肖特基接触Screen 筛选Scribing grid 划片格Secondary flat 次平面Seed crystal 籽晶Segregation 分凝Selectivity 选择性Self aligned 自对准的Self diffusion 自扩散Semiconductor 半导体Semiconductor laser半导体激光器Semiconductor-controlled rectifier 半导体可控硅Sensitivity 灵敏度Sensor 传感器Serial 串行/串联Series inductance 串联电感Settle time 建立时间Sheet resistance 薄层电阻Shaping 成型Shield 屏蔽Shifter 移相器Short circuit 短路Shot noise 散粒噪声Shunt 分流Sidewall capacitance 边墙电容Signal 信号Silica glass 石英玻璃Silicon 硅Silicon carbide 碳化硅Silicon dioxide (SiO2) 二氧化硅Silicon Nitride(Si3N4) 氮化硅Silicon On Insulator 绝缘体上硅Silver whiskers 银须Simple cubic 简立方Simulation 模拟Single crystal 单晶Sink 热沉Sinter 烧结Skin effect 趋肤效应Slot 槽隙Slow wave 慢波Smooth 光滑的Subthreshold 亚阈值的Solar battery/cell 太阳能电池Solid circuit 固体电路Solid Solubility 固溶度Solution 溶液Sonband 子带Source 源极Source follower 源随器Space charge 空间电荷Space Craft 宇宙飞行器Spacing 间距Specific heat(PT) 比热Spectral 光谱Spectrum 光谱(复数)Speed-power product 速度功耗乘积Spherical 球面的Spin 自旋Split 分裂Spontaneous emission 自发发射Spot 斑点Spray 喷涂Spreading resistance 扩展电阻Sputter 溅射Square root 平方根Stability 稳定性Stacking fault 层错Standard 标准的Standing wave 驻波State-of-the-art 最新技术Static characteristic 静态特性Statistical analysis 统计分析Steady state 稳态Step motor 步进式电动机Stimulated emission 受激发射Stimulated recombination 受激复合Stopband 阻带Storage time 存储时间Stress 应力Stripline 带状线Subband 次能带Sublimation 升华Submillimeter 亚毫米波Substrate 衬底Substitutional 替位式的Superconductor 超导(电)体Superlattice 超晶格Supply 电源Surface mound表面安装Surge capacity 浪涌能力Switching time 开关时间Switch 开关Synchronizer 同步器，同步装置Synthetic-aperture 合成孔径System 系统Technical 技术的，工艺的Telecommunication 远距通信，电信Telescope 望远镜Terahertz 太赫兹Terminal 终端Template 模板Temperature 温度Tensor 张量Test 测试试验Thermal activation 热激发Thermal conductivity 热导率Thermal equilibrium 热平衡Thermal Oxidation 热氧化Thermal resistance 热阻Thermal sink 热沉Thermal velocity 热运动Thick- film technique 厚膜技术Thin- film hybrid IC 薄膜混合集成电路Thin-Film Transistor(TFT) 薄膜晶体Three dimension 三维Threshold 阈值Through Silicon Via 硅通孔Thyistor 晶闸管Time resolution 时间分辨率Tolerance 公差T/R module 发射/接收模块Transconductance 跨导Transfer characteristic 转移特性Transfer electron 转移电子Transfer function 传输函数Transient 瞬态的Transistor aging(stress) 晶体管老化Transit time 渡越时间Transition 跃迁Transition-metal silica 过度金属硅化物Transition probability 跃迁几率Transition region 过渡区Transmissivity 透射率Transmitter 发射机Transceiver 收发机Transport 输运Transverse 横向的Trap 陷阱Trapping 俘获Trapped charge 陷阱电荷Travelling wave 行波Trigger 触发Trim 调配调整Triple diffusion 三重扩散Tolerance 容差Tube 管子电子管Tuner 调节器Tunnel(ing) 隧道（穿）Tunnel current 隧道电流Turn - off time 关断时间Ultraviolet 紫外的Ultrabright 超亮的Ultrasonic 超声的Underfilling 下填充Undoped 无掺杂Unijunction 单结的Unipolar 单极的Unit cell 原（元）胞Unity- gain frequency 单位增益频率Unilateral-switch 单向开关Vacancy 空位Vacuum 真空Valence(value) band 价带Value band edge 价带顶Valence bond 价键Vapour phase 汽相Varactor 变容管Variable 可变的Vector 矢量Vertical 垂直的Vibration 振动Visible light 可见光Voltage 电压Volt 伏特Wafer 晶片Watt 瓦Wave guide 波导Wavelength 波长Wave-particle duality 波粒二相性Wear-out 烧毁Wetting 浸润Wideband 宽禁带Wire 引线Wire routing 布线Work function 功函数Worst-case device 最坏情况器件X-ray X射线Yield 成品率Zinc 锌欢迎您的下载，资料仅供参考！致力为企业和个人提供合同协议，策划案计划书，学习资料等等打造全网一站式需求。
电子信息工程专业英语教程_第5版 题库
《电子信息工程专业英语教程(第5版)》题库Section A 术语互译 (1)Section B 段落翻译 (5)Section C阅读理解素材 (12)C.1 History of Tablets (12)C.2 A Brief History of satellite communication (13)C.3 Smartphones (14)C.4 Analog, Digital and HDTV (14)C.5 SoC (15)Section A 术语互译Section B 段落翻译Section C阅读理解素材C.1 History of TabletsThe idea of the tablet computer isn't new. Back in 1968, a computer scientist named Alan Kay proposed that with advances in flat-panel display technology, user interfaces, miniaturization of computer components and some experimental work in WiFi technology, you could develop an all-in-one computing device. He developed the idea further, suggesting that such a device would be perfect as an educational tool for schoolchildren. In 1972, he published a paper about the device and called it the Dynabook.The sketches of the Dynabook show a device very similar to the tablet computers we have today, with a couple of exceptions. The Dynabook had both a screen and a keyboard all on the same plane. But Key's vision went even further. He predicted that with the right touch-screen technology, you could do away with the physical keyboard and display a virtual keyboard in any configuration on the screen itself.Key was ahead of his time. It would take nearly four decades before a tablet similar to the one he imagined took the public by storm. But that doesn't mean there were no tablet computers on the market between the Dynabook concept and Apple's famed iPad.One early tablet was the GRiDPad. First produced in 1989, the GRiDPad included a monochromatic capacitance touch screen and a wired stylus. It weighed just under 5 pounds (2.26 kilograms). Compared to today's tablets, the GRiDPad was bulky and heavy, with a short battery life of only three hours. The man behind the GRiDPad was Jeff Hawkins, who later founded Palm.Other pen-based tablet computers followed but none received much support from the public. Apple first entered the tablet battlefield with the Newton, a device that's received equal amounts of love and ridicule over the years. Much of the criticism for the Newton focuses on its handwriting-recognition software.It really wasn't until Steve Jobs revealed the first iPad to an eager crowd that tablet computers became a viable consumer product. Today, companies like Apple, Google, Microsoft and HP are trying to predict consumer needs while designing the next generation of tablet devices.C.2 A Brief History of satellite communicationIn an article in Wireless World in 1945, Arthur C. Clarke proposed the idea of placing satellites in geostationary orbit around Earth such that three equally spaced satellites could provide worldwide coverage. However, it was not until 1957 that the Soviet Union launched the first satellite Sputnik 1, which was followed in early 1958 by the U.S. Army’s Explorer 1. Both Sputnik and Explorer transmitted telemetry information.The first communications satellite, the Signal Communicating Orbit Repeater Experiment (SCORE), was launched in 1958 by the U.S. Air Force. SCORE was a delayed-repeater satellite, which received signals from Earth at 150 MHz and stored them on tape for later retransmission. A further experimental communication satellite, Echo 1, was launched on August 12, 1960 and placed into inclined orbit at about 1500 km above Earth. Echo 1 was an aluminized plastic balloon with a diameter of 30 m and a weight of 75.3 kg. Echo 1 successfully demonstrated the first two-way voice communications by satellite.On October 4, 1960, the U.S. Department of Defense launched Courier into an elliptical orbit between 956 and 1240 km, with a period of 107 min. Although Courier lasted only 17 days, it was used for real-time voice, data, and facsimile transmission. The satellite also had five tape recorders onboard; four were used for delayed repetition of digital information, and the other for delayed repetition of analog messages.Direct-repeated satellite transmission began with the launch of Telstar I on July 10, 1962. Telstar I was an 87-cm, 80-kg sphere placed in low-Earth orbit between 960 and 6140 km, with an orbital period of 158 min. Telstar I was the first satellite to be able to transmit and receive simultaneously and was used for experimental telephone, image, and television transmission. However, on February 21, 1963, Telstar I suffered damage caused by the newly discovered Van Allen belts.Telstar II was made more radiation resistant and was launched on May 7, 1963. Telstar II was a straight repeater with a 6.5-GHz uplink and a 4.1-GHz downlink. The satellite power amplifier used a specially developed 2-W traveling wave tube. Along with its other capabilities, the broadband amplifier was able to relay color TV transmissions. The first successful trans-Atlantic transmission of video was accomplished with Telstar II , which also incorporated radiation measurements and experiments that exposed semiconductor components to space radiation.The first satellites placed in geostationary orbit were the synchronous communication (SYNCOM ) satellites launched by NASA in 1963. SYNCOM I failed on injection into orbit. However, SYNCOM II was successfully launched on July 26, 1964 and provided telephone, teletype, and facsimile transmission. SYNCOM III was launched on August 19, 1964 and transmitted TV pictures from the Tokyo Olympics. The International Telecommunications by Satellite (INTELSAT) consortium was founded in July 1964 with the charter to design, construct, establish, and maintain the operation of a global commercial communications system on a nondiscriminatory basis. The INTELSAT network started with the launch on April 6, 1965, of INTELSAT I, also called Early Bird. On June 28, 1965, INTELSAT I began providing 240 commercial international telephone channels as well as TV transmission between the United States and Europe.In 1979, INMARSAT established a third global system. In 1995, the INMARSAT name was changed to the International Mobile Satellite Organization to reflect the fact that the organization had evolved to become the only provider of global mobile satellite communications at sea, in the air, and on the land.Early telecommunication satellites were mainly used for long-distance continental and intercontinental broadband, narrowband, and TV transmission. With the advent of broadband optical fiber transmission, satellite services shifted focus to TV distribution, and to point-to-multipoint and very small aperture terminal (VSAT) applications. Satellite transmission is currently undergoing further significant growth with the introduction of mobile satellite systems for personal communications and fixed satellite systems for broadband data transmission.C.3 SmartphonesThink of a daily task, any daily task, and it's likely there's a specialized, pocket-sized device designed to help you accomplish it. You can get a separate, tiny and powerful machine to make phone calls, keep your calendar and address book, entertain you, play your music, give directions, take pictures, check your e-mail, and do countless other things. But how many pockets do you have? Handheld devices become as clunky as a room-sized supercomputer when you have to carry four of them around with you every day.A smartphone is one device that can take care of all of your handheld computing and communication needs in a single, small package. It's not so much a distinct class of products as it is a different set of standards for cell phones to live up to.Unlike many traditional cell phones, smartphones allow individual users to install, configure and run applications of their choosing. A smartphone offers the ability to conform the device to your particular way of doing things. Most standard cell-phone software offers only limited choices for re-configuration, forcing you to adapt to the way it's set up. On a standard phone, whether or not you like the built-in calendar application, you are stuck with it except for a few minor tweaks. If that phone were a smartphone, you could install any compatible calendar application you like.Here's a list of some of the things smartphones can do:•Send and receive mobile phone calls•Personal Information Management (PIM) including notes, calendar and to-do list•Communication with laptop or desktop computers•Data synchronization with applications like Microsoft Outlook•E-mail•Instant messaging•Applications such as word processing programs or video games•Play audio and video files in some standard formatsC.4 Analog, Digital and HDTVFor years, watching TV has involved analog signals and cathode ray tube (CRT) sets. The signal is made of continually varying radio waves that the TV translates into a picture and sound. An analog signal can reach a person's TV over the air, through a cable or via satellite. Digital signals, like the ones from DVD players, are converted to analog when played on traditional TVs.This system has worked pretty well for a long time, but it has some limitations:•Conventional CRT sets display around 480 visible lines of pixels. Broadcasters have been sending signals that work well with this resolution for years, and they can't fit enough resolution to fill a huge television into the analog signal.•Analog pictures are interlaced - a CRT's electron gun paints only half the lines for each pass down the screen. On some TVs, interlacing makes the picture flicker.•Converting video to analog format lowers its quality.United States broadcasting is currently changing to digital television (DTV). A digital signal transmits the information for video and sound as ones and zeros instead of as a wave. For over-the-air broadcasting, DTV will generally use the UHF portion of the radio spectrum with a 6 MHz bandwidth, just like analog TV signals do.DTV has several advantages:•The picture, even when displayed on a small TV, is better quality.• A digital signal can support a higher resolution, so the picture will still look good when shown on a larger TV screen.•The video can be progressive rather than interlaced - the screen shows the entire picture for every frame instead of every other line of pixels.•TV stations can broadcast several signals using the same bandwidth. This is called multicasting.•If broadcasters choose to, they can include interactive content or additional information with the DTV signal.•It can support high-definition (HDTV) broadcasts.DTV also has one really big disadvantage: Analog TVs can't decode and display digital signals. When analog broadcasting ends, you'll only be able to watch TV on your trusty old set if you have cable or satellite service transmitting analog signals or if you have a set-top digital converter.C.5 SoCThe semiconductor industry has continued to make impressive improvements in the achievable density of very large-scale integrated (VLSI) circuits. In order to keep pace with the levels of integration available, design engineers have developed new methodologies and techniques to manage the increased complexity inherent in these large chips. One such emerging methodology is system-on-chip (SoC) design, wherein predesigned and pre-verified blocks often called intellectual property (IP) blocks, IP cores, or virtual components are obtained from internal sources, or third parties, and combined on a single chip.These reusable IP cores may include embedded processors, memory blocks, interface blocks, analog blocks, and components that handle application specific processing functions. Corresponding software components are also provided in a reusable form and may include real-time operating systems and kernels, library functions, and device drivers.Large productivity gains can be achieved using this SoC/IP approach. In fact, rather than implementing each of these components separately, the role of the SoC designer is to integrate them onto a chip to implement complex functions in a relatively short amount of time.The integration process involves connecting the IP blocks to the communication network, implementing design-for-test (DFT) techniques and using methodologies to verify and validate the overall system-level design. Even larger productivity gains are possible if the system is architected as a platform in such as way that derivative designs can be generated quickly.In the past, the concept of SoC simply implied higher and higher levels of integration. That is, it was viewed as migrating a multichip system-on-board (SoB) to a single chip containing digital logic, memory, analog/mixed signal, and RF blocks. The primary drivers for this direction were the reduction of power, smaller form factor, and lower overall cost. It is important to recognize that integrating more and more functionality on a chip has always existed as a trend by virtue of Moore’s Law, which predicts that the number of transistors on a chip will double every 18-24 months. The challenge is to increase designer productivity to keep pace with Moore’s Law. Therefore, today’s notion of SoC is defined in terms of overall productivity gains through reusable design and integration of components.。
电子专业英语词汇
A．缩略词Modem：modulator and demodulator 调制解调器Rom ：read only memory 只读存储器 Ram：random access memory 随机存储器CAD-computer aided design 计算机辅助设计CAE-Computer Aided Engineering 计算机辅助工程CAM-Computer Aided Manufacturing 计算机辅助制造CPU- central processing unit 中央处理器PC- Personal Computer 个人计算机Program Counter 程序计数器IC- Integrated Circuit 集成电路MSI- medium-scale integration 中规模集成(电路) LSI- Large Scale I ntegrated circuit 大规模集成电路VLSI- Very Large Scale Integration 超大规模集成电路ULSI- Ultra Large Scale Integration 特大规模集成电路ASIC--Application-Specific Integrated Circuit 专用集成电路CEO- Chief Executive Officer 首席执行官CFO- Finance 首席财务官COO- Operate 首席运营官CIO- Information 首席信息官CTO- Technology 首席技术官PCB- Printed C ircuit Board 印刷电路板MCS-Micro Computer System 微型计算机系统MCU- Micro Control Unit 微控制器MPU- Micro Processing Unit 微处理器SOC-System On a Chip 片上系统CRT- Cathode Ray Tube 阴极射线管LED- light-emitting diode 发光二级管LCD- Liquid Crystal Display 液晶显示屏IEEE-The Institute of Electrical and Electronics Engineers 电气和电子工程师学会[美] ISA Industry Standard Architecture 工业标准结构PCI Peripheral Component Interconnection 外设部件互连AGP Accelerated Graphics Port 加速图形端口Lab-Laboratory 实验室Maths- mathematics 数学ASIC Application Specific Integrated Circuit 特定用途集成电路FPGA Field Programmable Gate Array 现场可编程门阵列PLC Programmable L ogic Controller 可编程逻辑控制器 ;Power Loading C ontrol 动力负载控制;Power-L i ne Carrier 电力线载波;FET Field E ffect Transistor 场效应晶体管MOSFET metallic oxide semiconductor field e ffect transistor[ 电子]金属氧化物半导体场效应晶体管CISC Complex Instruction Set Computer 复杂指令集计算机RISC Reduced I nstruction Set Computer, 精简指令集计算机USB Universal Serial Bus , （Intel 公司开发的）通用串行总线（架构）EEPROM-Electrically Erasable, Programmable Read-Only Memory.B、单词Amplifier 放大器flip-flop 触发器resistor 电阻器resistance 电阻capacitor 电容器capacitance 电容inductor 电感器inductance 电感operational amplifier 运算放大器sensor 传感器transducer 传感器，变换器register 寄存器conductor 导体semiconductor 半导体feedback 反馈diode 二极管transistor 晶体管，三极管thermo- 表示“热、热电”之义thermometer 温度计thermocouple 热电偶microcomputer 微型计算机monitor （监视器）1)direct current circuits 直流电路2)amplifier放大器3)analog electronics 模电4)semiconductor diode 半导体二极管5)transistor effect 晶体管效应6)microprocessor 或 microcontroller7)electrical engineering 电气工程8)power engineering 电力工程9)telecommunications engineering10)internal devices 内部器件1）assembler language 汇编语言2）alternating current circuits 交流电路3）passive electrical circuits 无源电路4）three phase circuits 三相电路5）digital electronics 数字电子技术微处理器或微控制器通信工程6）logic gates 逻辑门7）3D virtual reality image 三维虚拟图像8）computer programming 计算机编程9）major in （在大学里）主修10）advanced programming techniques 高级编程技术1）electrical components 电子元件2）Ohm law 欧姆定律3）limit current 限制电流4）voltage divider 分压器5）transistor biasing circuits 晶体管偏置电路6）block DC current 阻碍直流7）store electric energy 或 store electrical energy 储存电能8）inductive reactance 感抗9）dielectric insulating material 或 insulating material 绝缘材料10）AC resistance/ 或AC impedance 交流阻抗1)known as capacitive reactance 称为容抗2)with units of ohms 单位是欧姆3)prevent device from b urning out 防止器件烧掉4)has an AC resistance to AC current 对交流电流有阻抗5)adjustment with a screw 用一个螺丝调节6)in the shape of a cylinder 呈圆柱形式7)block DC current, but pass AC current 阻直流，但通交流8)to vary the inductance 改变电感9)be given by the formula. 由公式给出10)the RF amplifie 音频放大器1)general-purpose meter 通用仪表2)analog meter 数字仪表3)reverse the test leads 交换测试笔4)mechanical adjust 机械调节5)measure resistance 测量电阻6)positive voltage 正向电压7)measure current 测量电流8)voltage amplitude 电压幅度9)dual-trace oscilloscope 双踪示波器10)signal generator 信号发生器1）analog multimeter 模拟万用表2）extended range 扩展范围3）specific meters 特殊仪表4)include the function and r ange switches 具有功能及范围选择旋钮5)present an electronic picture 呈现一幅电子图像6)display the voltage waveform 显示电压波形7)appear on the screen 在屏幕上出现8)phase relationship 相位关系9)as an example 例如，作为一个例子10)in series with the circuit 串联接入电路1)PN junction PN 结2)anode 阳极（正极）3)external resistance 外阻4)bipolar transistor 三极管5) a small current controls a large current 一个小电流控制一个大电流6)base current 基极电流7)enhancement MOS transistors 增强型 MOS 管8)P-channelP 沟道9)integrated circuits 集成电路10)electron and hole 电子和空穴1)semiconductor material 半导体材料2)forward biased 正向偏置3)depend on the external circuit resistance 取决于外部电路的电阻4)excessive reverse-biased voltage 过高的反偏电压5)is directly proportional to the amount of base current. 是正比于基极电流6)may even appear almost as a short 几乎可看成是短路7)cause stability problems for a transistor circuit.引起晶体管电路的稳定性（不好）问题8)digital technology 数字技术9)the most popular technology 最普遍的技术，最常用的技术10)use two complementary types of transistors N-channel and P-channel用两种互补型的晶体管 -N 沟道（MOS 管）和 P 沟道（MOS 管）1)electronic power supply 或 steady DC Voltage source 稳压电源2)bridge rectifier 桥式整流器3)pulsating DC 脉冲直流电4)anode of diode 二极管的正极5)peak voltage 峰值电压6)capacitor filter 电容滤波器7)charge and discharge 充电和放电8)zener diode 稳压管9)IEEE (Institute of Electrical and Electronics Engineers) 电气电子工程师学会10)technical professional association 专业技术组织1)equipment operation 设备的运行2)device that converts AC i nto DC 把交流电转换成直流电的器件（设备）3)the power lines 电源线4)depending on the value of DC voltage needed 根据（取决于）所需要的直流电压值5)a half-wave rectifier 半波整流器6)so as to produce a constant DC output 从而产生一个稳定的直流输出7)in the negative side of the capacitor 在电容的负极8)flow through the load 流过负载9)in the forward-biased condition 在加正向偏置（电压）的条件下10)a series ( current-limiting) resistor 一个串联（限制电流）电阻1)K irchho ff’s Vo ltag e L a w基尔霍夫电压定律2)voltage sources 电压源3)the law of conservation of electric charge 电荷守恒定律4)at every instant of time 在每一瞬时5)voltages across elements 元件两端的电压6)radio transmission 无线电传输7)frequency modulation 调频信号8)the frequency domain 频域9)linear resistor 线性电阻10)amplitude modulation wave 调幅波形1)current source 电流源2)under this circumstance 在这种情况下3)pre se nt the se co nd o f Kirchho ff’s laws给出基尔霍夫第二定律4)introduce the concept of a “loop”引入“回路”的概念5)An alternative statement o f KVL KVL 的另一种表述法6)voltages algebraically sum 电压代数和7)sinusoidal steady-state response 正弦稳态响应8)ordinary household voltage 日常用电（即民用电和一般工业用电）的电压9)time-invariant circuit 时不变电路10)percentage of modulation. 调制百分比1)digital integrated circuits 数字集成电路2)system design 系统设计3)application-specific integrated circuit (ASIC) 专用集成电路4)the productivity of c hip designers 芯片设计能力（生产力）5)sophisticated design tools 复杂精致的设计工具6)fast response times 快速时间响应7)combinational logic blocks 组合逻辑（电路）块8)valid signals 有效信号9)input-output delay 输入输出延迟10)the highest frequency l ogic circuits 高频逻辑电路1)very large scale integrated(VLSI) circuits1) 超大规模集成电路2)in coarse terms 粗略地说3)integrate a greater number of transistors in a single die or integrated circuit (IC) 在一个芯片上集成大量晶体管即集成电路4)make well-informed design decisions. 作出全面的设计决定5)the ratio of channel width to channel length 沟道宽度与沟道长度的比值6)output latch of a combinational block6) 组合块（电路）的输出锁存器7)defined in a high-level language 用（计算机）高级语言定义（描述）8)reliability of MOS transistorsMOS 管的可靠性9)reduce the power consumption 减小消耗功率10)to realize circuit functions 实现电路的功能1)decimal system 十进制数字系统2)storage of information within the computer 在计算机中信息的储存3)printed or displayed 打印或显示4)logic operation 逻辑运算5)combination of gates 组合逻辑门6)provide an output high only when all inputs are high仅当输入全为高电平时输出为高电平7)above expressing 上述表达式8)synchronous device 同步器件9)be combined with other gates 与其他门电路结合10)the versatility and flexibility of digital integrated circuits数字集成电路的通用性和多功能性1)flip-flop 触发器2)asynchronous device 异步器件3)at arbitrary time 在任意时间4)change state only on arrival of a clock pulse 当时钟脉冲信号来到时改变状态5)the octal and h exadecimal systems 八进制和十六进制系统6)clear input 清除输入（信号）7)play video games 玩电视游戏，玩计算机游戏8)surf the web 上网（网上冲浪）9)with a common clock p ulse transition 用同一时钟脉冲 (控制)转换10)in its broadest definition 用广义的定义1)make up a computer system 组成一个计算机系统2)high performance software 高性能的软件3)the input/output (or I/O) devices 输入输出器件4)CPU instructions reside in memory 存储在储存器中的 CPU 指令5)store data to an output device 把数据储存到一个输出设备中6)the control bus 或 control signal lines 控制信号线7)interrupt lines 中断线8)read data from a memory 从存储器中读数据9)semiconductor integrated circuits 半导体集成电路10)dynamic RAM memory 动态随机存储器1)impact system performance 影响系统的性能2)be g enerally associated with external devices 通常与外部设备相连接3)read data from an input device 从输入设备中读取数据4)connect the various components of a VNA machine与一台冯.诺依曼计算机的各种部件相连接5)data bus 数据总线6)80x86 family microprocessor80X86 系列微处理器（芯片）7)to d ifferentiate memory locations and I/O devices区分储存器的不同地址和不同的输入输出器件8)this prompts the question 这就提出了一个问题9)worth a brief mention 值得简要地提一下10)storage capacity in a s ingle memory chip 一个存储芯片的存储容量1)with some similarities to …与……有些类似2)in an academic sense 以学术观点来看3)structured language 结构化语言4)the distinguishing feature 显著特征5)local variables 局部变量6)side effect 副作用7)readable programs 易读的程序8)high-level computer languages 计算机高级语言9)assembly language instructions 汇编语言指令10)comments describing the statements 描述语句的注释1)perform a specific task执. 行一个指定的任务2)to creep into a program 潜伏（隐藏）在一个程序中3)in various situations 在各种情况下4)section off and hide from the rest of the program 和程序的其他部分分开并隐藏起来5)providean alternative to a s s embly language programming 给出汇编语言编程的替代方法6)correspond to one assembly language statement 与一条汇编语言对应7)using alphanumeric symbols 用字母及数字符号8)make it easier for programmers to write 使编程者容易书写（程序）9)two statement with t he braces 花括号中的两条语句10)c reate program structure 创建程序结构1)still image 静止图像2)relate to television 与电视有关的3)the most common way of displaying images 最常见的显示图像方式4)CRT or the cathode ray tube 阴极射线管，显像管5)pixel 像素6)create magnetic fields6) 建立电磁场7)move the beam horizontally 水平移动光束8)electron beam 电子束9)emit red, green and blue light 发射红、绿、蓝光10)electrical signals 电信号1)satellite broadcast 卫星广播2)the normal intensity signal 标准亮度的信号3)be familiar with……对……很熟悉4)cable TV programs 有线电视节目5)select the channel 选（电视节目）频道1)reassemble the dots into a meaningful image1) 把像点重新拼成一幅有意义的图像2)second amazing feature 第二个奇妙的特点3)hit the flat screen 撞击平坦的屏幕4)contain three different parts 含有三个不同的部分5)the three colors m ix together 三种颜色混合在一起。
Current-mode logic circuit
专利名称：Current-mode logic circuit 发明人：Koichiro Furuta申请号：US08/531931申请日：19950921公开号：US05550491A公开日：19960827专利内容由知识产权出版社提供摘要：A current-mode logic circuit is provided having large gain and resistance to noise or power source fluctuations which employs in its logic circuits circuits that shape waves. Such a current-mode logic circuit entails little increase in the area of integrated circuits. In addition to a differential logic pair composed of MOS transistors M31 and M32, load elements R31 and R32, and constant-current source I31, the current-mode logic circuit of the present invention is provided with a holding transistor pair composed of MOS transistors M33 and M34. MOS transistors M31 and M32 have equal conductance, and MOS transistors M33 and M34 have equal conductance. In addition, the present invention is characterized in that the sum of conductance of MOS transistors M31 andM33 is a constant if the electrical power consumption of the circuits is constant.申请人：NEC CORPORATION代理机构：Ostrolenk, Faber, Gerb & Soffen, LLP更多信息请下载全文后查看。
第七章MOS反向器
得到：
VG LVG SLVo
VGL
CB C0 CB
Vo
VGL的升高低于 VO的升高
定义：
VGL Vo
称作自举效率
2）反偏PN结漏电流 由于ME的反偏PN结漏电流的存在，C0,CB上的电荷会
不断减少，导致VGL下降，直到ML截止，输出电压Vo也逐 渐降低。
采取措施：增加辅助上拉元件MA或RA
效应）
第一部分: MOS晶体管的工作原理
MOSFET（Metal Oxide Semi-conduction Field Effect Transistor），是构成VLSI的基本元件。 一、半导体的表面场效应 1、P型半导体
图 1 P 型半导体
2、表面电荷减少
图 2 表面电荷减少
3、形成耗尽层
3.耗尽型负载NMOS反相器 (VTD<0)
输出高电平时，M1截止，M2工作在线性区，得到
I D 2 K D [ V T D 2 ( V o u t V T D V D D ) 2 ] 0
所以有
VOH VDD
（VG-VT-VS）
输出低电平时，M1工作在线性区，M2工作在饱和区
K E [ ( V i n V T E ) 2 ( V i n V T E V o u t) 2 ] K D V T 2 DVGS-VT
（4）当VDS增大到一定极限时，由于电压过高， 晶体管被雪崩击穿，电流急剧增加。
4种MOS管：
（1）N沟增强：
D G
S
Ids
G
S
D
N+
N+
P--Si
Ids
Vg=Vt
Vds
Vt
基于多数决定逻辑非门的低功耗全加器设计
基于多数决定逻辑非门的低功耗全加器设计江耀曦;高剑【摘要】全加器是算术运算的基本单元,提高一位全加器的性能是提高运算器性能的重要途径之一.首先提出多数决定逻辑非门的概念和电路设计,然后提出一种基于多数决定逻辑非门的全加器电路设计.该全加器仅由输入电容和CMOS反向器组成,较少的管子、工作于极低电源电压、短路电流的消除是该全加器的三个主要特征.对这种新的全加器,用PSpice进行了晶体管级模拟.结果显示,这种新的全加器能正确完成加法器的逻辑功能.【期刊名称】《现代电子技术》【年(卷),期】2010(033)016【总页数】3页(P72-73,76)【关键词】全加器;多数决定逻辑非门;CMOS反向器;低功耗【作者】江耀曦;高剑【作者单位】昆明理工大学信息工程与自动化学院,云南,昆明,650031;昆明司沃得教科技有限公司,云南,昆明,650221【正文语种】中文【中图分类】TN401-330 引言加法运算是算术运算中最基本的运算。
减法、乘法、除法及地址计算这些基于加法的运算已广泛地应用于超大规模集成电路(VLSI)中。
全加器是组成二进制加法器的基本组成单元，所以提高全加器的性能是提高运算器性能的最重要途径之一。
对于全加器结构的研究，国内外有许多相关报道[1-5]，大多数研究致力于提高全加器的速度和降低其功耗。
设计全加器的方法有很多种，最简单的方法是用组合门实现所需的逻辑函数，另外一种常用的方法是采用传输门实现。
由于传输门具有很强的逻辑功能，且输入电容小，因而用传输门实现的全加器速度快，且结构简单。
采用传输门实现的全加器比组合门实现的全加器电路要简单。
但这种电路以CMOS传输门为基本单元，而不是在管子级进行设计，因而，这种全加器电路存在冗余，需进一步简化。
结合上面的讨论，提出一种结构更加简单，性能更好的加法器单元电路，它仅由输入电容和CMOS反向器组成，而且通过电路简化设计，克服了功耗问题。
本文首先提出多数决定逻辑门的概念和电路设计，然后提出了一种基于多数决定逻辑门的全加器电路设计。
半导体一些术语的中英文对照
半导体一些术语的中英文对照离子注入机ion implanterLSS理论Lindhand Scharff and Schiott theory 又称“林汉德-斯卡夫-斯高特理论〞。
沟道效应channeling effect射程分布range distribution深度分布depth distribution投影射程projected range阻止距离stopping distance阻止本领stopping power标准阻止截面standard stopping cross section 退火annealing激活能activation energy等温退火isothermal annealing激光退火laser annealing应力感生缺陷stress-induced defect择优取向preferred orientation制版工艺mask-making technology图形畸变pattern distortion初缩first minification精缩final minification母版master mask铬版chromium plate干版dry plate乳胶版emulsion plate透明版see-through plate高分辨率版high resolution plate, HRP超微粒干版plate for ultra-microminiaturization 掩模mask掩模对准mask alignment对准精度alignment precision光刻胶photoresist又称“光致抗蚀剂〞。
负性光刻胶negative photoresist正性光刻胶positive photoresist无机光刻胶inorganic resist多层光刻胶multilevel resist电子束光刻胶electron beam resistX射线光刻胶X-ray resist刷洗scrubbing甩胶spinning涂胶photoresist coating后烘postbaking光刻photolithographyX射线光刻X-ray lithography电子束光刻electron beam lithography离子束光刻ion beam lithography深紫外光刻deep-UV lithography光刻机mask aligner投影光刻机projection mask aligner曝光exposure接触式曝光法contact exposure method接近式曝光法proximity exposure method光学投影曝光法optical projection exposure method 电子束曝光系统electron beam exposure system分步重复系统step-and-repeat system显影development线宽linewidth去胶stripping of photoresist氧化去胶removing of photoresist by oxidation等离子［体］去胶removing of photoresist by plasma 刻蚀etching干法刻蚀dry etching反响离子刻蚀reactive ion etching, RIE各向同性刻蚀isotropic etching各向异性刻蚀anisotropic etching反响溅射刻蚀reactive sputter etching离子铣ion beam milling又称“离子磨削〞。
半导体专业名词
tapeout 流片fabout 产出半导体英语词汇5. Active device：有源器件，如MOS FET（非线性，可以对信号放大）6. Align mark(key)：对位标记8. Aluminum：铝9. Ammonia：氨水10. Ammonium fluoride：NH4F11. Ammonium hydroxide：NH4OH12. Amorphous silicon：α-Si，非晶硅（不是多晶硅）13. Analog：模拟的14. Angstrom：A（1E-10m）埃15. Anisotropic：各向异性（如POLY ETCH）16. AQL(Acceptance Quality Level)：接受质量标准，在一定采样下，可以95%置信度通过质量标准（不同于可靠性，可靠性要求一定时间后的失效率）17. ARC(Antireflective coating)：抗反射层（用于METAL等层的光刻）18. Antimony(Sb)锑19. Argon(Ar)氩20. Arsenic(As)砷21. Arsenic trioxide(As2O3)三氧化二砷22. Arsine(AsH3)23. Asher：去胶机24. Aspect ration：形貌比（ETCH中的深度、宽度比）25. Autodoping：自搀杂（外延时SUB的浓度高，导致有杂质蒸发到环境中后，又回掺到外延层）26. Back end：后段（CONTACT以后、PCM测试前）27. Baseline：标准流程28. Benchmark：基准32. Character window：特征窗口。
用文字或数字描述的包含工艺所有特性的一个方形区域。
36. CIM：computer-integrated manufacturing的缩写。
用计算机控制和监控制造工艺的一种综合方式。
37. Circuit design ：电路设计。
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Technology: NSC 0.18 µm CMOS9
Master Semester Project, 2007
Author: Director: Supervisors:
Anna Pe˜ na Mart´ ınez Prof. Yusuf Leblebici Mr. St´ ephane Badel Dr. Frank K. GurkMOS Current-Mode Logic Standard Cells
List of Figures
1.1 Project structure . . . . . . . . . . . . . . . . . . . . . . . . . 2.1 Classical MOS Logic Inverter . . . . . . . . . . . . . . . . . . 2.2 Classical MOS Logic Inverter when output is zero. . . . . . 2.3 Classical MOS Logic Inverter when output is one. . . . . .
Analysis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Testbench and analog environement . . . . . . . . . . . . . 16 Corners . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Multiple drive strengths . . . . . . . . . . . . . . . . . . . . 22 Guard ring . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 4 Results 27
. . . . . . . . . 10
2.8 Schematic of Level 1 . . . . . . . . . . . . . . . . . . . . . . . 12 2.9 Schematic of Level 2 . . . . . . . . . . . . . . . . . . . . . . . 13 2.10 Schematic of Level 3 . . . . . . . . . . . . . . . . . . . . . . . 14 3.1 Testbench for level 1 . . . . . . . . . . . . . . . . . . . . . . . 17 3.2 Testbench for level 2 . . . . . . . . . . . . . . . . . . . . . . . 17 3.3 Testbench for level 3 . . . . . . . . . . . . . . . . . . . . . . . 17 3.4 Multiple drive strengths - Level 1. Comparison of transistors sizes simulated vs calculated. . . . . . . . . . . . . . . 23 3.5 Multiple drive strengths - Level 2, W1 . Comparison of transistors sizes simulated vs calculated. . . . . . . . . . . . . . 24 3.6 Multiple drive strengths - Level 2, W2 . Comparison of transistors sizes simulated vs calculated. . . . . . . . . . . . . . 24 3.7 Multiple drive strengths - Level 3. Comparison of transistors sizes simulated vs calculated. . . . . . . . . . . . . . . 25 3.8 Placement of the guard rings . . . . . . . . . . . . . . . . . . 26 Design of MOS Current-Mode Logic Standard Cells “ iv
Microelectronics Systems Laboratory (LSM) ´ ´ DE ´ RALE DE L AUSANNE (EPFL) E COLE P OLYTECHNIQUE F E
Contents
Acknowledgements . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Introduction Project structure . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 The CML Technology Basics of MCML . . . . . . . . . . . . . . . . . . . . . . . . . . . . MCML vs CMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . Classical CMOS Logic Inverter . . . . . . . . . . . . . . . . MOS Current-Mode Inverter . . . . . . . . . . . . . . . . . . vi 2 2 4 4 5 5 8
3 5 6 6 7 7 8
2.4 Transfer characteristic of a classical CMOS inverter . . . . 2.5 Current vs. Input Voltage for the Classical CMOS Inverter 2.6 MOS Current-Mode Logic Inverter . . . . . . . . . . . . . . . 2.7 Transfer characteristic of a MCML inverter
LIST OF FIGURES 4.1 Level 1, first generation . . . . . . . . . . . . . . . . . . . . . 29 4.2 Level 1, second generation, strength X2 . . . . . . . . . . . 30 4.3 Level 1, second generation, strength X4 . . . . . . . . . . . 30 4.4 Level 1, second generation, strength X4 (another option) . 31 4.5 Level 1, second generation, strength X8 . . . . . . . . . . . 31 4.6 Level 1, second generation, strength X8 (another option) . 32 4.7 Level 2, first generation . . . . . . . . . . . . . . . . . . . . . 33 4.8 Level 2, second generation, strength X2 . . . . . . . . . . . 33 4.9 Level 2, second generation, strength X4 . . . . . . . . . . . 34 4.10 Level 2, second generation, strength X8 . . . . . . . . . . . 34 4.11 Level 2, third generation, strength X2 . . . . . . . . . . . . . 35 4.12 Level 2, third generation, strength X4 . . . . . . . . . . . . . 35 4.13 Level 3, first generation, topology 1 . . . . . . . . . . . . . . 37 4.14 Level 3, first generation, topology 2 . . . . . . . . . . . . . . 37 4.15 Level 3, first generation, topology 3 . . . . . . . . . . . . . . 38 4.16 Level 3, first generation, topology 4 . . . . . . . . . . . . . . 38 4.17 Level 3, first generation, topology 5 . . . . . . . . . . . . . . 39 4.18 Level 3, second generation, strength X2 . . . . . . . . . . . 39 4.19 Level 3, second generation, strength X4 . . . . . . . . . . . 40 4.20 Level 3, second generation, strength X8 . . . . . . . . . . . 40 4.21 Level 3, third generation, strength X2 . . . . . . . . . . . . . 41 4.22 Level 3, third generation, strength X4 . . . . . . . . . . . . . 41 4.23 Level 1, strength X1 . . . . . . . . . . . . . . . . . . . . . . . 42 4.24 Level 1, strength X4 . . . . . . . . . . . . . . . . . . . . . . . 43 4.25 Level 2, strength X1 . . . . . . . . . . . . . . . . . . . . . . . 44 4.26 Level 2, strength X4 . . . . . . . . . . . . . . . . . . . . . . . 45 4.27 Level 3, strength X1 . . . . . . . . . . . . . . . . . . . . . . . 46 4.28 Level 3, strength X4 . . . . . . . . . . . . . . . . . . . . . . . 47