CMOS transceiver having an integrated power amplif
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专利名称：CMOS transceiver having an integrated
power amplifier
发明人：David J. Weber,Patrick Yue,David Su
申请号：US09663101
申请日：20000915
公开号：US06504433B1
公开日：
20030107
专利内容由知识产权出版社提供
专利附图：
摘要：The present invention provides a breakdown resistant transistor structure for amplifying communication signals. This structure includes a first NMOS transistor having a source connected to ground and a first gate for receiving the input radio frequency
signal. The first gate is disposed above a first insulator and the first NMOS transistor having a first transconductance and a first breakdown voltage associated therewith. Also included is a second NMOS transistor having a source connected to the drain of the first NMOS transistor, a gate connected to the reference DC voltage, and a drain that provides the output for the amplified radio signal, the load being disposed between the reference DC voltage and the drain of the second NMOS transistor. The second gate is disposed above a second insulator, the second NMOS transistor has a second transconductance and a second breakdown voltage associated therewith, and the second insulator may be thicker than the first insulator. This results in the first transconductance being greater than the second transconductance, and the second breakdown voltage being greater than the first breakdown voltage.
申请人：ATHEROS COMMUNICATIONS, INC.
代理机构：Pillsbury Winthrop LLP
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