SI4431DDY
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(Note 1a) (Note 1)
50 25
°C/W °C/W
Package Marking and Ordering Information
Device Marking 4431 Device Si4431DY Reel Size 13’’ Tape width 12mm Quantity 2500 units
2 VGS = -3.5V 1.8 -4.0V 1.6 -4.5V 1.4 1.2 1 0.8 0 10 20 -ID, DIRAIN CURRENT (A) 30 40 -5.0V -6.0V -7.0V -8.0V -9.0V -10.0V
8
0 0 1 2 3 4 5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Si4431DY Rev A
Si4431DY
Typical Characteristics
10 ID = -7.2A 8 -15V 6 VDS = -5V -10V
1500 f = 1 MHz VGS = 0 V CISS 900
1200
4
600
2
300
COSS CRSS
0 0 5 10 Qg, GATE CHARGE (nC) 15 20
Figure 3. On-Resistance Variation with Temperature.
30 VDS = -5V -ID, DRAIN CURRENT (A) 25 125 C 20 15 10 5 0 1 2 3 4 5
o
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
2001 Fairchild Semiconductor International
Si4431DY Rev A
Si4431DY
Electrical Characteristics
Symbol
BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR
TA = 25°C unless otherwise noted
100 -IS, REVERSE DRAIN CURRENT (A)
TA = -55 C
o
25 C
o
VGS = 0V 10 TA = 125 C 25 C 0.1 -55 C
o o o
1
0.01
0.001 0 0.2 0.4 0.6 0.8 1 1.2 1.4
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 2)
VDS = –15 V, f = 1.0 MHz
V GS = 0 V,
930 278 114
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge
Parameter
Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse
Si4431DY
January 2001
Si4431DY
P-Channel Logic Level PowerTrench MOSFET
General Description
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.15 RDS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -7A VGS = -10V
ID = -3.6A 0.12
1.4
1.2
0.09
1
0.06
TA = 125 C 0.03 TA = 25 C
o
o
0.8
0.6 -50 -25 0 25 50 75 100
o
0 125 150 2 4 6 8 10
TJ, JUNCTION TEMPERATURE ( C)
-VGS, GATE TO SOURCE VOLTAGE (V)
Typ
Max Units
V
Off Characteristics
-22 -1 100 –100 cs
VGS(th) ∆VGS(th) ∆TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance
0 0 5 10 15 20 -VDS, DRAIN TO SOURCE VOLTAGE (V)
IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = –2.1 A Voltage –2.1
(Note 2)
A V
–0.76
–1.2
Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
(Note 2)
Test Conditions
VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C VDS = -24 V, VGS = 20 V, VGS = -20 V VGS = 0 V VDS = 0 V VDS = 0 V
Min
-30
Features
• –6.3 A, –30 V. RDS(ON) = 0.032 Ω @ VGS = -10 V RDS(ON) = 0.05 Ω @ VGS = -4.5 V • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability
TA=25oC unless otherwise noted
Parameter
Ratings
–30 ±20
(Note 1a)
Units
V V A W
-6.3 -40 2.5 1.2 1.0 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
–1
–1.5 4 0.027 0.04 0.04
–3
V mV/°C
0.032 0.05 0.54
Ω
ID(on) gFS
–20 14.5
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
VDD = –15 V, VGS = –10 V,
ID = –1 A, RGEN = 6 Ω
12 11 33 13
21 20 52 23 29
ns ns ns ns nC nC nC
VDS = –15 V, VGS = –10 V
ID = –7.2 A,
18 2.5 4.1
Drain–Source Diode Characteristics and Maximum Ratings
Si4431DY Rev A
Si4431DY
Typical Characteristics
40 VGS = -10.0V -6.0V -ID, DRAIN CURRENT (A) 32 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -5.0V -4.5V -4.0V 24 -3.5V 16 -3.0V
Applications
• DC/DC converter • Load switch • Motor Drive
D D
D
D
5 6 4 3 2 1
SO-8
S
S
S
G
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
VDS = VGS, ID = –250 µA ID = –250 µA, Referenced to 25°C VGS = –10 V, ID = –7.0 A ID = –5.5 A VGS = –4.5 V, VGS = –10 V, ID = –7.0A, TJ=125°C VGS = –10 V, VDS = –10 V, VDS = –5 V ID = –7.0 A
a) 50°/W when 2 mounted on a 1in pad of 2 oz copper
b) 105°/W when 2 mounted on a .04 in pad of 2 oz copper
c) 125°/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
50 25
°C/W °C/W
Package Marking and Ordering Information
Device Marking 4431 Device Si4431DY Reel Size 13’’ Tape width 12mm Quantity 2500 units
2 VGS = -3.5V 1.8 -4.0V 1.6 -4.5V 1.4 1.2 1 0.8 0 10 20 -ID, DIRAIN CURRENT (A) 30 40 -5.0V -6.0V -7.0V -8.0V -9.0V -10.0V
8
0 0 1 2 3 4 5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Si4431DY Rev A
Si4431DY
Typical Characteristics
10 ID = -7.2A 8 -15V 6 VDS = -5V -10V
1500 f = 1 MHz VGS = 0 V CISS 900
1200
4
600
2
300
COSS CRSS
0 0 5 10 Qg, GATE CHARGE (nC) 15 20
Figure 3. On-Resistance Variation with Temperature.
30 VDS = -5V -ID, DRAIN CURRENT (A) 25 125 C 20 15 10 5 0 1 2 3 4 5
o
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
2001 Fairchild Semiconductor International
Si4431DY Rev A
Si4431DY
Electrical Characteristics
Symbol
BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR
TA = 25°C unless otherwise noted
100 -IS, REVERSE DRAIN CURRENT (A)
TA = -55 C
o
25 C
o
VGS = 0V 10 TA = 125 C 25 C 0.1 -55 C
o o o
1
0.01
0.001 0 0.2 0.4 0.6 0.8 1 1.2 1.4
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 2)
VDS = –15 V, f = 1.0 MHz
V GS = 0 V,
930 278 114
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge
Parameter
Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse
Si4431DY
January 2001
Si4431DY
P-Channel Logic Level PowerTrench MOSFET
General Description
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.15 RDS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -7A VGS = -10V
ID = -3.6A 0.12
1.4
1.2
0.09
1
0.06
TA = 125 C 0.03 TA = 25 C
o
o
0.8
0.6 -50 -25 0 25 50 75 100
o
0 125 150 2 4 6 8 10
TJ, JUNCTION TEMPERATURE ( C)
-VGS, GATE TO SOURCE VOLTAGE (V)
Typ
Max Units
V
Off Characteristics
-22 -1 100 –100 cs
VGS(th) ∆VGS(th) ∆TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance
0 0 5 10 15 20 -VDS, DRAIN TO SOURCE VOLTAGE (V)
IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = –2.1 A Voltage –2.1
(Note 2)
A V
–0.76
–1.2
Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
(Note 2)
Test Conditions
VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C VDS = -24 V, VGS = 20 V, VGS = -20 V VGS = 0 V VDS = 0 V VDS = 0 V
Min
-30
Features
• –6.3 A, –30 V. RDS(ON) = 0.032 Ω @ VGS = -10 V RDS(ON) = 0.05 Ω @ VGS = -4.5 V • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability
TA=25oC unless otherwise noted
Parameter
Ratings
–30 ±20
(Note 1a)
Units
V V A W
-6.3 -40 2.5 1.2 1.0 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
–1
–1.5 4 0.027 0.04 0.04
–3
V mV/°C
0.032 0.05 0.54
Ω
ID(on) gFS
–20 14.5
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
VDD = –15 V, VGS = –10 V,
ID = –1 A, RGEN = 6 Ω
12 11 33 13
21 20 52 23 29
ns ns ns ns nC nC nC
VDS = –15 V, VGS = –10 V
ID = –7.2 A,
18 2.5 4.1
Drain–Source Diode Characteristics and Maximum Ratings
Si4431DY Rev A
Si4431DY
Typical Characteristics
40 VGS = -10.0V -6.0V -ID, DRAIN CURRENT (A) 32 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -5.0V -4.5V -4.0V 24 -3.5V 16 -3.0V
Applications
• DC/DC converter • Load switch • Motor Drive
D D
D
D
5 6 4 3 2 1
SO-8
S
S
S
G
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
VDS = VGS, ID = –250 µA ID = –250 µA, Referenced to 25°C VGS = –10 V, ID = –7.0 A ID = –5.5 A VGS = –4.5 V, VGS = –10 V, ID = –7.0A, TJ=125°C VGS = –10 V, VDS = –10 V, VDS = –5 V ID = –7.0 A
a) 50°/W when 2 mounted on a 1in pad of 2 oz copper
b) 105°/W when 2 mounted on a .04 in pad of 2 oz copper
c) 125°/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%