ESD protection circuit
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专利名称：ESD protection circuit
发明人：Da-Wei Lai,Ming Li,Jeoung Mo Koo,Purakh
Raj Verma
申请号：US13669409
申请日：20121105
公开号：US08853783B2
公开日：
20141007
专利内容由知识产权出版社提供
专利附图：
摘要：A device which includes a substrate defined with a device region having an ESD protection circuit is disclosed. The ESD protection circuit has a transistor. The transistor includes a gate having first and second sides. A first diffusion region is disposed adjacent
to the first side of the gate and a second diffusion region is disposed in the device region displaced away from the second side of the gate. The first and second diffusion regions include dopants of a first polarity type. A drift isolation region is disposed between the gate and the second diffusion region. A first device well encompasses the device region and a second device well is disposed within the first device well. A drain well having dopants of the first polarity type is disposed under the second diffusion region and within the first device well.
申请人：GlobalFoundries Singapore Pte. Ltd.
地址：Singapore SG
国籍：SG
代理机构：Horizon IP Pte. Ltd.
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