High speed low power magnetic devices based on cur
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专利名称：High speed low power magnetic devices
based on current induced spin-momentum
transfer
发明人：Andrew Kent,Barbaros Ozyilmaz,Enrique
Gonzalez Garcia
申请号：US11932745
申请日：20071031
公开号：US07573737B2
公开日：
20090811
专利内容由知识产权出版社提供
专利附图：
摘要：A high speed and low power method to control and switch the magnetization
direction and/or helicity of a magnetic region in a magnetic device for memory cells using spin polarized electrical current. The magnetic device comprises a reference magnetic layer with a fixed magnetic helicity and/or magnetization direction and a free magnetic layer with a changeable magnetic helicity. The fixed magnetic layer and the free magnetic layer are preferably separated by a non-magnetic layer, and the reference layer includes an easy axis perpendicular to the reference layer. A current can be applied to the device to induce a torque that alters the magnetic state of the device so that it can act as a magnetic memory for writing information. The resistance, which depends on the magnetic state of the device, is measured to thereby read out the information stored in the device.
申请人：Andrew Kent,Barbaros Ozyilmaz,Enrique Gonzalez Garcia
地址：New York NY US,Brooklyn NY US,Orlando FL US
国籍：US,US,US
代理机构：Darby & Darby P.C.
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