MBRB2040CT中文资料

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MBR2060CT;MBR2050CT;MBR2045CT;MBR2035CT;中文规格书,Datasheet资料

MBR2035CT-MBR2060CT
MBR2035CT - MBR2060CT
Features • • • • • •
Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection.
20
150 125 100 75 50 25 0
16
12
SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" (9.00mm) LOAD LENGTHS
8
4
0
0
25
50 75 100 125 Ambient Temperature [ºC]
Figure 3. Forward Voltage Characteristics
Figure 4. Reverse Current vs Reverse Voltage
2000 1000 500
MBR2050CT-MBR2060CT MBR2035CT-MBR2045CT
Transient Thermal Impedance [ºC/W]
Thermal Characteristics

MBR2045CT中文资料

Preferred devices are Motorola recommended choices for future use and best overall value. Rev 2
vF 0.57 0.72 0.84 iR 15 0.1 15 0.1 0.57 0.72 0.84
Volts
mA
元器件交易网
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MBR2035CT/D
SWITCHMODE™ Power Rectifiers
. . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • • • • • Guardring for Stress Protection Low Forward Voltage 150°C Operating Junction Temperature Guaranteed Reverse Avalanche Epoxy Meets UL94, VO at 1/8″
TJ = 150°C
AV
60
+ 20, 10, 5
80 100 120 140 160
16
20
24
28
32
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
TA, AMBIENT TEMPERATURE (°C)
Figure 7. Forward Power Dissipation

MBR30H100CT中文资料

MBR30H100CT , MBRF30H100CT & MBRB30H100CT SeriesVishay Semiconductorsformerly General SemiconductorDocument Number New ProductReverse Voltage 90 to 100VForward Current 30A Maximum T J 175°CMounting Pad Layout TO-263ABITO-220AB (MBRF30H90CT, MBRF30H100CT)(MBR30H90CT, MBR30H100CT)TO-263AB (MBRB30H90CT, MBRB30H100CT)Features• Plastic package has Underwriters Laboratory Flammability Classification 94V-0• Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency• Guardring for overvoltage protection• For use in low voltage, high frequency inverters, free wheeling, and polarity protection applicationsMechanical DataCase:JEDEC TO-220AB, ITO-220AB & TO-263AB molded plastic bodyTerminals:Plated leads, solderable per MIL-STD-750, Method 2026High temperature soldering guaranteed: 250°C/10 seconds, 0.25" (6.35mm) from case Polarity:As markedMounting Position: AnyMounting Torque:10 in-lbs maximum Weight:0.08oz., 2.24gMBR30H100CT , MBRF30H100CT & MBRB30H100CT SeriesVishay Semiconductorsformerly General Semiconductor Document Number 88791Maximum Ratings (TC= 25°C unless otherwise noted)ParameterSymbol MBR30H90CTMBR30H100CTUnit Maximum repetitive peak reverse voltage V RRM 90100V Working peak reverse voltage V RWM 90100V Maximum DC blocking voltageV DC 90100V Maximum average forward rectified current Total device 30(see fig. 1)Per leg I F(AV)15A Peak forward surge current8.3ms single half sine-wave superimposed I FSM 275A on rated load (JEDEC Method) per legPeak repetitive reverse current per leg at t p = 2µs, 1KH Z I RRM 1.0A Voltage rate of change (rated V R )dv/dt 10,000V/µs Operating junction and storage temperature range T J , T STG –65 to +175°C RMS Isolation voltage (MBRF type only) from terminals 4500(1)to heatsink with t = 1 second, RH ≤30%V ISOL3500(2)V1500(3)Electrical Characteristics (TC= 25°C unless otherwise noted)ParameterSymbolValue Unit at I F = 15A, T J = 25°C 0.82Maximum instantaneous at I F = 15A, T J = 125°C V F0.67Vforward voltage per leg (4)at I F = 30A, T J = 25°C 0.93at I F = 30A, T J = 125°C0.80Maximum reverse current per leg T J = 25°C 5.0µA at working peak reverse voltage (4)T J = 125°CI R6.0mAThermal Characteristics (TC= 25°C unless otherwise noted)ParameterSymbol MBR MBRF MBRB UnitTypical thermal resistance per legR θJC1.94.61.9OC/WNotes:(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset (2) Clip mounting (on case), where leads do overlap heatsink(3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9 mm (0.19”)(4) Pulse test: 300µs pulse width, 1% duty cycleOrdering InformationProductCase Package CodePackage OptionMBR30H90CT - MBR30H100CT TO-220AB 45Anti-Static tube, 50/tube, 2K/carton MBRF30H90CT - MBRF30H100CT ITO-220AB 45Anti-Static tube, 50/tube, 2K/carton 3113” reel, 800/reel, 4.8K/cartonMBRB30H90CT - MBRB30H100CTTO-263AB45Anti-Static tube, 50/tube, 2K/carton81Anti-Static 13” reel, 800/reel, 4.8K/cartonMBR30H100CT , MBRF30H100CT & MBRB30H100CT SeriesVishay Semiconductorsformerly General SemiconductorDocument Number Ratings andCharacteristic Curves (T A = 25°C unless otherwise noted)100100.10.011.0J u n c t i o n C a p a c i t a n c e (p F )110100100100000.110Reverse Voltage (V)t, Pulse Duration (sec.)I F -- I n s t a n t a n e o u s F o r w a r d C u r r e n t (A )5101520253035Fig. 1 – Forward Derating CurvePer LegA v e r a g e F o r w a r d C u r r e n t (A )Fig. 2 – Maximum Non-Repetitive Peak Forward Surge Current Per Leg1000。

SBR2040CT资料

20A SBR®Super Barrier RectifierFeatures MechanicalData• Case Material: Molded Plastic, UL FlammabilityClassification Rating 94V-0• Moisture Sensitivity: Level 1 per J-STD-020C• Terminals: Matte Tin Finish annealed overCopper leadframe. Solderable per MIL-STD-202,Method 208• Marking: See Page 3• Ordering Information: See Page 3• Low Forward Voltage Drop• Excellent High Temperature Stability• Super Barrier Design• Soft, Fast Switching Capability• Molded Plastic TO-220AB,and ITO-220AB packages• Lead Free Finish, RoHS Compliant (Note 2)Maximum Ratings @ T A = 25ºC unless otherwise specifiedSingle phase, half wave, 60Hz, resistive or inductive load.For capacitive load, derate current by 20%.Characteristic SymbolValueUnit Peak Repetitive Reverse VoltageWorking Peak Reverse VoltageDC Blocking VoltageV RRMV RWMV RM40 VRMS Reverse Voltage V R(RMS)28 VAverage Rectified Output Current @ T C = 110ºC I O20 ANon-Repetitive Peak Forward Surge Current 8.3msSingle Half Sine-Wave Superimposed on Rated LoadI FSM120 APeak Repetitive Reverse Surge Current (2uS-1Khz) I RRM 2 AMaximum Thermal Resistance (per leg)Package = TO-220ABPackage = ITO-220ABRӨJC 24°C/WOperating and Storage Temperature Range T J, T STG-65 to +150 ºCElectrical Characteristics@ T A = 25ºC unless otherwise specifiedCharacteristic SymbolMin Typ Max Unit Test ConditionReverse Breakdown Voltage (Note 1) V(BR)R40 - - V I R = 0.5 mAForward Voltage Drop V F--0.430.530.48VI F = 10A, T J = 25ºCI F = 10A,T J = 125ºCLeakage Current (Note 1) I R- -0.5100mAV R = 40V, T J= 25 ºCV R = 40V, T J = 125 ºCNotes:1. Short duration pulse test used to minimize self-heating effect.2. RoHS revision 13.2.2003. High temperature solder exemption applied, see EU Directive Annex Note 7.__________SBR is a registered trademark of Diodes Incorporated.Package Outline DrawingsITO-220ABTO-220ABTO-220ABDIM. MIN. MAX.A 4.47 4.67 b 0.71 0.91 b1 1.17 1.37 c 0.31 0.53 D 14.65 15.35 D1 8.50 8.90 E 10.01 10.31 e 2.54 typ e1 4.98 5.18 F 1.17 1.37 J1 2.52 2.82 L 13.4013.80 L1 3.56 3.96 ØP 3.735 3.935 Q 2.59 2.89All Dimensions in MillimetersITO-220ABDIM. MIN. MAX.A 4.30 4.70b 0.50 0.75 b1 1.10 1.35 b2 1.50 1.75c 0.50 0.75 D 14.80 15.20 E 9.96 10.36 e 2.54 typ F 2.80 3.20 J1 2.50 2.90 L 12.80 13.60 L1 1.70 1.90 ØP 3.50 typ Q 2.70 typAll Dimensions in MillimetersMarking, Polarity, Weight & Ordering InformationSBR2040CT SBR2040CTFP Case StyleTO-220AB ITO-220ABtAnodeCommonCathode AnodePolarityCasetAnodeCommonCathode AnodeMarking2.1g 1.9gWeightOrderingInformationSBR2040CT SBR2040CTFP50 pieces/tube50 pieces/tubeYY = Last two digits of year, ex = 06 = 2006Date CodeWW = Week (01-52)Other MarkingInformationA = Foundry CodeB = Assembly CodeIMPORTANT NOTICEDiodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changeswithout further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any productdescribed herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shallassume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,harmless against all damages.LIFE SUPPORTDiodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed writtenapproval of the President of Diodes Incorporated.。

MBRS10100CT资料

100
0.70 0.57 0.80 0.65 0.1 6.0 2.0 -65 to +150 -65 to +175 0.85 0.75 0.95 0.85
V mA mA ℃/W ℃ ℃
TSTG
TJ
3. Thermal Resistance from Junction to Case Per Leg.
04.25.2005/rev. a
元器件交易网
RATINGS AND CHARACTERISTIC CURVES (MBRS1035CT THRU MBRS10100CT)
FIG.1- FORWARD CURRENT DERATING CURVE
5.0
180
FIG.2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG
Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Guardring for overvoltage protection High temperature soldering guaranteed: 260oC/10 seconds,0.25”(6.35mm)from case

MBR40200FCT丨MBR40200CT全塑封半塑封ASEMI半导体选型参数

编辑：DD摘要:ASEMI肖特基二极管MBR40100FCT全塑封封装和铁头封装哪种性能比较好？这两种封装各有它的有点？不着急，接下来，就由ASEMI工程就为大家详细介绍这两款封装的区别及优点台湾ASEMI肖特基二极管MBR40200FCT全部采用：进口高性能俄罗斯Mikron扩散高抗击芯片，内置130Mil大规格整流芯片；确保平均最大输出40A 的电流；反向耐压值达到100V；通俗的来讲，MBR40200FCT可以通过正向40A的电流，而反向可以承受100V的电压。

MBR40200FCT是一款常规型肖特基二极管，广泛应用于高频电源等领域。

电性参数方面都被大家广为熟知。

那么有关于它的封装问题，又有多少朋友知道呢？MBR40200FCT既有全塑封封装又有铁头封装，这也是工程或者采购朋友们一直困惑的问题，到底应该采购哪种比较好呢？不着急，接下来，就由ASEMI工程就为大家详细介绍这两款封装的区别及优点。

ASEMI肖特基二极管MBR40200FCT-用全塑封装绝缘性更好我们经常所说采用塑封或者全塑封，就是指MBR40200FCT肖特基二极管内部框架、芯片、焊片等等电路全部被一体包封住，与外界隔绝。

它所采用的材料是环氧树脂，这种高级环氧材料具有非常好的抗热性,防氧化性及绝缘性都非常好。

我们知道MBR40200FCT应用领域多为电源高频整流环节,所以对安全性要求比较高，需要拥有很好绝缘性来避免电路短路等故障发生。

正是这样，采用全塑封装的能有效避免内部电路与外界接触，更好的保护电路安全。

ASEMI肖特基二极管MBR40200FCT-用铁头封装散热性表现更佳这款肖特基二极管除了有采用为保障电路安全的全塑封装外，还有另外一种封装，那就是为解决散热性问题的铁头封装。

采用铁头封装的型号打标方式为MBR40200CT与全塑封装相区别。

这种封装能大幅提升电源的有效散热效率，针对发热严重或者对散热要求高的电路非常适用。

综上所述，就是MBR40200全塑封与铁头的详细介绍了，不知工程及采购朋友掌握了没有呢？仅供参考,希望对大家在以后应用货采购上有所帮助。

MBR20H100CT中文资料

MBR20H100CT , MBRF20H100CT & MBRB20H100CT SeriesVishay Semiconductorsformerly General SemiconductorDocument Number New ProductCase:JEDEC TO-220AB, ITO-220AB, TO-263AB & TO-262AA molded plastic bodyTerminals:Plated leads, solderable per MIL-STD-750, Method 2026High temperature soldering guaranteed:250°C/10 seconds, 0.25" (6.35mm) from case (TO-220AB,ITO-220AB & TO-252AA) at terminals (TO-236AB)Polarity:As marked Mounting Position: Any Mounting Torque:10 in-lbs maximum Weight:0.08 oz., 2.24 g• Plastic package has Underwriters Laboratory Flammability Classification 94V-0• Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency• Guardring for overvoltage protection• For use in low voltage, high frequency inverters, free wheeling, and polarity protection applicationsMBR20H100CT , MBRF20H100CT & MBRB20H100CT SeriesVishay Semiconductorsformerly General Semiconductor Document Number 88673Maximum Ratings (TC= 25°C unless otherwise noted)ParameterSymbol MBR20H90CTMBR20H100CTUnit Maximum repetitive peak reverse voltage V RRM 90100V Working peak reverse voltage V RWM 90100V Maximum DC blocking voltageV DC90100V Maximum average forward rectified current Total device20Per legI F(AV)10A Peak forward surge current8.3ms single half sine-wave superimposed I FSM 250A on rated load (JEDEC Method) per legPeak repetitive reverse current per leg at t p = 2µs, 1KH Z I RRM 1.0A Voltage rate of change (rated V R )dv/dt 10,000V/µs Operating junction and storage temperature range T J , T STG –65 to +175°C RMS Isolation voltage (MBRF type only) from terminals 4500(1)to heatsink with t = 1 second, RH ≤30%V ISOL3500(2)V1500 (3)Electrical Characteristics (TC= 25°C unless otherwise noted)ParameterSymbolValue UnitMaximum instantaneous I F = 10A,T C = 25°C 0.77forward voltage per leg at (4):I F = 10A,T C = 125°C 0.64I F = 20A,T C = 25°C V F 0.88V I F = 20A,T C = 125°C 0.73Maximum reverse current per leg T J = 25°C 4.5µA at working peak reverse voltageT J = 125°CI R6.0mAThermal Characteristics (TC= 25°C unless otherwise noted)ParameterSymbol MBR MBRF MBRB Unit Typical thermal resistance per legR ΘJC2.05.82.0°C/WNotes:(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset (2) Clip mounting (on case), where leads do overlap heatsink(3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9 mm (0.19”)(4) Pulse test: 300µs pulse width, 1% duty cycleOrdering InformationProductCase Package CodePackage OptionMBR20H90CT - MBR20H100CT TO-220AB 45Anti-Static tube, 50/tube, 2K/carton MBRF20H90CT - MBRF20H100CT ITO-220AB 45Anti-Static tube, 50/tube, 2K/carton 3113” reel, 800/reel, 4.8K/cartonMBRB20H90CT - MBRB20H100CTTO-263AB45Anti-Static tube, 50/tube, 2K/carton81Anti-Static 13” reel, 800/reel, 4.8K/cartonMBR20H100CT , MBRF20H100CT & MBRB20H100CT SeriesVishay Semiconductorsformerly General SemiconductorDocument Number Ratings andCharacteristic Curves per leg (TA= 25°C unless otherwise noted)481220160.11101001000Fig. 1 — Forward Current Derating CurveFig. 2 — Maximum Non-Repetitive PeakForward Surge Current Per Leg0.010.1110。

SB2040CT中文资料

SB2020CT – SB20100CT20A SCHOTTKY BARRIER RECTIFIERSingle Phase, half wave, 60Hz, resistive or inductive load.For capacitive load, derate current by 20%.Characteristic Symbol SB2020CTSB2030CTSB2040CTSB2050CTSB2060CTSB2080CTSB20100CTUnitPeak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRMV RWMV R203040506080100VRMS Reverse Voltage V R(RMS)14212835425670V Average Rectified Output Current @T C = 95°C I O20A Non-Repetitive Peak Forward Surge Current 8.3msSingle half sine-wave superimposed on rated load(JEDEC Method)I FSM200A Forward Voltage @I F = 10A V FM0.550.750.85VPeak Reverse Current @T A = 25°C At Rated DC Blocking Voltage @T A = 100°C I RM0.5100mATypical Junction Capacitance (Note 1)C j1100pF Operating and Storage Temperature Range T j, T STG-65 to +150°C Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.WTEI ,A V E R A G E O U T P U T C U R R E N T (A )(A V )04812162010406080100120140150T , CASE TEMPERATURE (ºC)Fig.1Forward Current Derating CurveC100100020000.1 1.010100C ,C A P A C I T A N C E (p F )j V ,REVERSE VOL TAGE (V)Fig.4T ypical Junction CapacitanceR 050100150200250110100I , P E A K F O R W A R D S U R G E C U R R E N T (A )F S M NUMBER OF CYCLES AT 60HzFig. 3 Maximum Non-Repetitive P eak Fwd Surge Current11020400.51.01.52.02.5I ,N S T A N T A N E O U S F O R W A R D C U R R E N T (A )F V ,INSTANTANEOUS FORWARD VOLTAGE (V)Fig.2T ypical Forward CharacteristicsFORDERING INFORMATIONProduct No.Package TypeShipping QuantitySB2020CT TO-22050 Units/Tube SB2030CT TO-22050 Units/Tube SB2040CT TO-22050 Units/Tube SB2050CT TO-22050 Units/Tube SB2060CT TO-22050 Units/Tube SB2080CT TO-22050 Units/Tube SB20100CTTO-22050 Units/TubeShipping quantity given is for minimum packing quantity only. For minimum orderquantity, please consult the Sales Department.Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer. WTE reserves the right to change any or all information herein without further notice.WARNING : DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life support devices or systems without the express written approval.We power your everyday.Won-Top Electronics Co., Ltd.No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan Phone: 886-7-822-5408 or 886-7-822-5410Fax: 886-7-822-5417Email: sales@Internet: 。

MBRB20200CT中文资料

ELECTRICAL CHARACTERISTICS (PER LEG)
Maximum Instantaneous Forward Voltage (1) 0.9 0.8 1.0 0.9 1.0 50 Volts
Maximum Instantaneous Reverse Current (1) (Rated dc Voltage, TC = 25°C) (Rated dc Voltage, TC = 125°C)
Amps Amps Amps Amp °C °C V/µs °C/W
THERMAL CHARACTERISTICS (PER LEG)
Thermal Resistance — Junction to Case RθJC (IF = 10 Amps, TC = 25°C) (IF = 10 Amps, TC = 125°C) (IF = 20 Amps, TC = 25°C) (IF = 20 Amps, TC = 125°C) VF 2.0
150
160
Figure 3. Forward Power Dissipation
IF(AV), AVERAGE FORWARD CURRENT (AMPS) 20 500
Figure 4. Current Derating, Case
RθJA = 16°C/W RATED VOLTAGE C, CAPACITANCE (pF)
Figure 2. Typical Reverse Current (Per Leg)
SQUARE WAVE
RATED VOLTAGE RθJC = 2°C/W
20
15 SQUARE WAVE 10 dc
5
0
90

SBR20U100CT中文资料

20A SBR®Super Barrier RectifierFeatures MechanicalData• Case Material: Molded Plastic, UL FlammabilityClassification Rating 94V-0• Moisture Sensitivity: Level 1 per J-STD-020C• Terminals: Matte Tin Finish annealed overCopper leadframe. Solderable per MIL-STD-202,Method 208• Marking: See Page 4• Ordering Information: See Page 4• Low Forward Voltage Drop• Excellent High Temperature Stability• Super Barrier Design• Soft, Fast Switching Capability• Molded Plastic TO-220AB,and ITO-220AB packages• Lead Free Finish, RoHS Compliant (Note 2)Maximum Ratings @ T A = 25ºC unless otherwise specifiedSingle phase, half wave, 60Hz, resistive or inductive load.For capacitive load, derate current by 20%.Characteristic SymbolValueUnit Peak Repetitive Reverse VoltageWorking Peak Reverse VoltageDC Blocking VoltageV RRMV RWMV RM100 VRMS Reverse Voltage V R(RMS)71 VAverage Rectified Output Current @ T C = 140ºC I O20 ANon-Repetitive Peak Forward Surge Current 8.3msSingle Half Sine-Wave Superimposed on Rated LoadI FSM200 APeak Repetitive Reverse Surge Current (2uS-1Khz) I RRM 3 ANon-Repetitive Avalanche Energy(T J = 25ºC, I AS = 5A, L = 8.5 mHE AS140 mJRepetitive Peak Avalanche Power(1µs, 25ºC)P ARM13,200 WMaximum Thermal Resistance (per leg)Package = TO-220ABPackage = ITO-220ABRӨJC 24°C/WOperating and Storage Temperature Range T J, T STG-65 to +175 ºCElectrical Characteristics@ T A = 25ºC unless otherwise specifiedCharacteristic SymbolMin Typ Max Unit Test ConditionReverse Breakdown Voltage (Note 1) V(BR)R100 - - V I R = 0.5 mAForward Voltage Drop V F--0.57-0.700.630.82VI F = 10A, T J = 25ºCI F = 10A,T J = 125ºCI F = 20A, T J = 25ºCLeakage Current (Note 1) I R- -0.525mAV R = 100V, T J= 25 ºCV R = 100V, T J = 125 ºCNotes:1. Short duration pulse test used to minimize self-heating effect.2. RoHS revision 13.2.2003. High temperature solder exemption applied, see EU Directive Annex Note 7.__________SBR is a registered trademark of Diodes Incorporated.Package Outline DrawingsTO-220ABTO-220ABDIM. MIN. MAX.A 4.47 4.67b 0.71 0.91b1 1.17 1.37c 0.31 0.53D 14.65 15.35D1 8.50 8.90E 10.01 10.31e 2.54type1 4.98 5.18F 1.17 1.37J1 2.52 2.82L 13.40 13.80L1 3.56 3.96ØP 3.735 3.935Q 2.59 2.89All Dimensions in MillimetersITO-220ABITO-220ABDIM. MIN. MAX.A 4.30 4.70b 0.50 0.75b1 1.10 1.35b2 1.50 1.75c 0.50 0.75D 14.80 15.20E 9.96 10.36e 2.54typF 2.80 3.20J1 2.50 2.90L 12.80 13.60L1 1.70 1.90ØP 3.50typQ 2.70typAll Dimensions in MillimetersMarking, Polarity, Weight & Ordering InformationSBR20U100CT SBR20U100CTFP Case StyleTO-220AB ITO-220ABtAnodeCommonCathode AnodePolarityCasetAnodeCommonCathode AnodeMarking2.1g 1.9gWeightOrderingInformationSBR20U100CT SBR20U100CTFP50 pieces/tube50 pieces/tubeYY = Last two digits of year, ex = 06 = 2006Date CodeWW = Week (01-52)Other MarkingInformationA = Foundry CodeB = Assembly CodeIMPORTANT NOTICEDiodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changeswithout further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any productdescribed herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shallassume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,harmless against all damages.LIFE SUPPORTDiodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed writtenapproval of the President of Diodes Incorporated.。

MBRB2045CT中文资料

MBRB2035CT THRU MBRB2060CTSCHOTTKY RECTIFIERReverse Voltage - 35 to 60 Volts Forward Current -20.0 AmperesFEATURES♦Plastic package has Underwriters Laboratory Flammability Classification 94V-0♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction,majority carrier conduction ♦ Low power loss,high efficiency♦ High current capability, low forward voltage drop ♦ High surge capability♦ Guardring for overvoltage protection♦ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications ♦ High temperature soldering in accordance with CECC 802 / Reflow guaranteedMECHANICAL DATACase:JEDEC TO-263AB molded plasticTerminals:Leads solderable per MIL-STD-750,Method 2026Polarity:As marked Mounting Position:AnyWeight:0.08 ounce, 2.24 gramsMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICSRatings at 25°C ambient temperature unless otherwise specified.SYMBOLS MBRB2035CT MBRB2045CT MBRB2050CTMBRB2060CT UNITSMaximum repetitive peak reverse voltage V RRM 35455060Volts Maximum working peak reverse voltage V RWM 35455060Volts Maximum DC blocking voltageV DC 35455060Volts Maximum average forward rectified current at T C =135°CI (AV)20.0Amps Peak repetitive forward current per leg at T C =135°C (rated V R , sq. wave 2.0 KH Z )I FRM 20.0Amps Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)I FSM 150.0AmpsPeak repetitive reverse surge current (NOTE 1)I RRM 1.00.5Amps Maximum instantaneous I F =10A, T C =25°C _0.80forward voltage per leg atI F =10A, T C =125°C V F0.570.70Volts(NOTE 2)I F =20A, T C =25°C 0.840.95I F =20A, T C =125°C0.720.85Maximum instantaneous reverse current at rated DC blocking voltage per leg T C =25°CI R 0.10.15mA T C=125°C 15.0150.0Voltage rate of change, (rated V R )dv/dt 10,000V/µs Typical thermal resistance per leg (NOTE 3)R ΘJC 2.0°C/W Operating junction temperature range T J -65 to +150°C Storage temperature rangeT STG-65 to +175°CNOTES:(1) 2.0µs pulse width, f=1.0KH Z(2) Pulse test: 300µs pulse width, 1% duty cycle (3) Thermal resistance from junction to case per leg4/98Dimensions in inches and (millimeters)NEW PRODUCTNEW PRODUCT NEW PRODUCT元器件交易网元器件交易网。

MBRB20100CTG中文资料

MBRB20100CTPreferred Device SWITCHMODE tPower RectifierD2PAK Surface Mount Power PackageThe D2PAK Power Rectifier is a state−of−the−art device that employs the use of the Schottky Barrier principle with a platinum barrier metal.Features•Package Designed for Power Surface Mount Applications •Center−T ap Configuration•Guardring for Stress Protection•Low Forward V oltage•175°C Operating Junction Temperature•Epoxy Meets UL 94 V−0 @ 0.125 in•Short Heat Sink Tab Manufactured − Not Sheared!•Similar in Size to Industry Standard TO−220 Package•Pb−Free Packages are AvailableMechanical Characteristics•Case: Epoxy, Molded, Epoxy Meets UL 94 V−0•Weight: 1.7 Grams (Approximately)•Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable•Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds•Device Meets MSL1 Requirements•ESD Ratings:Machine Model, C >400 VHuman Body Model, 3B >8000 VMAXIMUM RATINGS (Per Leg)Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.1.The heat generated must be less than the thermal conductivity fromJunction−to−Ambient: dP D/dT J < 1/R q JA.D2PAKCASE 418BSTYLE 3341SCHOTTKY BARRIERRECTIFIER20 AMPERES100 VOLTS13Preferred devices are recommended choices for future use and best overall value.MARKING DIAGRAMAY WWB20100GAKASee detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.ORDERING INFORMATIONA= Assembly LocationY= YearWW= Work WeekB20100= Device CodeG= Pb−Free PackageAKA= Diode PolarityELECTRICAL CHARACTERISTICS (Per Leg)3.Pulse Test: Pulse Width = 300 m s, Duty Cycle ≤2.0%.ORDERING INFORMATIONSpecifications Brochure, BRD8011/D.Figure 3. Typical Current Derating, Case, Per Leg i F , I N S T A N T A N E O U S F O R W A R D C U R R E N T (A M P S )AVERAGE CURRENT (AMPS)T C , CASE TEMPERATURE (°C)I F (A V ), A V E R A G E F O R W A R D C U R R E N T (A M P S )Figure 4. Average Power Dissipation & Average CurrentPACKAGE DIMENSIONSD 2PAK CASE 418B−04ISSUE Jǒmm inchesǓSOLDERING FOOTPRINT**For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.STYLE 3:PIN 1.ANODE2.CATHODE3.ANODE4.CATHODEVARIABLEVIEW W−WVIEW W−WVIEW W−W123SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION。

MBR2045CTG中文资料

100 TJ = 150°C
10
125°C
100°C
1.0 75°C
0.1 25°C
0.01
0.001 0 5.0 10 15 20 25 30 35 40 45 50 VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Maximum Reverse Current
IFSM, PEAK HALF−WAVE CURRENT (AMPS)
DTJL = Ppk • RqJL [D + (1 − D) • r(t1 + tp) + r(tp) − r(t1)] where: DTJL = the increase in junction temperature above the lead temperature. r(t) = normalized value of transient thermal resistance at time, t, i.e.:
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• ESD Rating: Human Body Model = 3B
Machine Model = C

0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
vF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 2. Maximum Forward Voltage
3
元器件交易网
MBR2045CT
IR, REVERSE CURRENT (mA)

MBR20H100CTG中文资料

MBR20H100CT, MBRB20H100CT, MBRF20H100CT SWITCHMODE™Power Rectifier 100 V, 20 AFeatures and Benefits•Low Forward V oltage: 0.64 V @ 125°C •Low Power Loss/High Efficiency •High Surge Capacity•175°C Operating Junction Temperature •20 A Total (10 A Per Diode Leg)•Guard−Ring for Stress Protection •Pb−Free Packages are Available Applications•Power Supply − Output Rectification•Power Management•InstrumentationMechanical Characteristics:•Case: Epoxy, Molded•Epoxy Meets UL 94 V−0 @ 0.125 in•Weight (Approximately):1.9 Grams (TO−220)1.7 Grams (D2PAK)•Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable•Lead Temperature for Soldering Purposes:260°C Max. for 10 SecondsMAXIMUM RATINGSPlease See the Table on the Following PageTO−220ABCASE 221ASTYLE 6SCHOTTKY BARRIERRECTIFIER20 AMPERES, 100 VOLTS13MARKINGDIAGRAMSA= Assembly LocationY= YearWW= Work WeekB20H100= Device CodeG=Pb−Free DeviceAKA= Polarity Designator−220CASE 221DSTYLE 33See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.ORDERING INFORMATIOND2PAKCASE 418BSTYLE 3AY WWB20H100GA K AMAXIMUM RATINGS (Per Diode Leg)Rating Symbol Value UnitPeak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRMV RWMV R100VAverage Rectified Forward Current(Rated V R) T C = 162°CI F(AV)10APeak Repetitive Forward Current(Rated V R, Square Wave, 20 kHz) T C = 160°CI FRM20ANonrepetitive Peak Surge Current(Surge applied at rated load conditions halfwave, single phase, 60 Hz)I FSM250A Operating Junction Temperature (Note 1)T J+175°C Storage Temperature T stg*65 to +175°C Voltage Rate of Change (Rated V R)dv/dt10,000V/m s Controlled Avalanche Energy (see test conditions in Figures 11 and 12)W AVAL200mJESD Ratings:Machine Model = CHuman Body Model = 3B > 400> 8000VTHERMAL CHARACTERISTICS Maximum Thermal Resistance(MBR20H100CT and MBRB20H100CT)− Junction−to−Case− Junction−to−Ambient (MBRF20H100CT)− Junction−to−Case R q JCR q JAR q JC2.0602.5°C/WELECTRICAL CHARACTERISTICS (Per Diode Leg)Maximum Instantaneous Forward Voltage (Note 2) (I F = 10 A, T C = 25°C)(I F = 10 A, T C = 125°C)(I F = 20 A, T C = 25°C)(I F = 20 A, T C = 125°C)v F0.770.640.880.73VMaximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, T C = 125°C)(Rated DC Voltage, T C = 25°C)i R6.00.0045mAStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.1.The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP D/dT J < 1/R q JA.2.Pulse Test: Pulse Width = 300 m s, Duty Cycle ≤ 2.0%.DEVICE ORDERING INFORMATIONDevice Order Number Package Type Shipping†MBR20H100CT TO−22050 Units / RailMBR20H100CTG TO−220(Pb−Free)50 Units / RailMBRF20H100CTG TO−220FP(Pb−Free)50 Units / RailMBRB20H100CTT4G D2PAK(Pb−Free)800 / Tape & Reel†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.I F , I N S T A N T A N E O U S F O R W A R D C U R R E N T (A M P S )10010.1I R , R E V E R S E C U R R E N T (A M P S )1.0E 1.0E 1.0E 1.0E 1.0E I F , A V E R A G E F O R W A R D C U R R E N T (A M P S )Figure 5. Current DeratingT C , CASE TEMPERATURE (°C)105015I O , AVERAGE FORWARD CURRENT (AMPS)510Figure 6. Forward Power Dissipation101.0E 1.0E 1.0E S )20152520C , C A P A C I T A N C E (p F )V R , REVERSE VOLTAGE (VOLTS)10010Figure 7. Capacitance100001000R (t ), T R A N S I E N T T H E R M A L R E S I S T A N C E0.1R (t ), T R A N S I E N T T H E R M A L R E S I S T A N C EFigure 9. Thermal Response Junction −to −Case for MBR20H100CT and MBRB20H100CTt 1, TIME (sec)0.01R (t ), T R A N S I E N T T H E R M A L R E S I S T A N C EFigure 10. Thermal Response Junction −to −Case for MBRF20H100CTt 1, TIME (sec)0.10.011100.001BV DUTI LI DV DDt 0t 1t 2tFigure 11. Test Circuit Figure 12. Current −Voltage WaveformsThe unclamped inductive switching circuit shown in Figure 11 was used to demonstrate the controlled avalanche capability of this device. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened.When S 1 is closed at t 0 the current in the inductor I L ramps up linearly; and energy is stored in the coil. At t 1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BV DUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t 2.By solving the loop equation at the point in time when S 1is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the V DD power supply while the diode is in breakdown (from t 1 to t 2) minus any losses due to finite component resistances. Assuming the component resistiveelements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the V DD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S 1 was closed,Equation (2).W AVAL [12LI 2LPKǒBV DUT BV DUT –VDDǓW AVAL [12LI 2LPK EQUATION (1):EQUATION (2):PACKAGE DIMENSIONSVIEW W −WVIEW W −WVIEW W −W123D 2PAK 3CASE 418B −04ISSUE J*For additional information on our Pb −Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*ǒmm inchesǓPACKAGE DIMENSIONSTO −220PLASTIC CASE 221A −09ISSUE ABNOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE TO −220 FULLPAK CASE 221D −03ISSUE GSTYLE 3:PIN 1.ANODE2.CATHODE3.ANODEMBM0.25 (0.010)YSEATING PLANEDIM A MIN MAX MIN MAX MILLIMETERS0.6250.63515.8816.12INCHES B 0.4080.41810.3710.63C 0.1800.190 4.57 4.83D 0.0260.0310.650.78F 0.1160.119 2.95 3.02G 0.100 BSC 2.54 BSC H 0.1250.135 3.18 3.43J 0.0180.0250.450.63K 0.5300.54013.4713.73L 0.0480.053 1.23 1.36N 0.200 BSC 5.08 BSC Q 0.1240.128 3.15 3.25R 0.0990.103 2.51 2.62S 0.1010.113 2.57 2.87U0.2380.2586.06 6.56NOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH3.221D−01 THRU 221D−02 OBSOLETE, NEW STANDARD 221D−03.ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATIONSWITCHMODE is a trademark of Semiconductor Components Industries, LLC.。

MBR10100CT-ASEMI封装与MBR10100FCT的区别分析

MBR10100CT详细信息：型号：MBR10100CT封装：TO-220典型参数：10A,100V正向电流（Io）：10A反向耐压（Vrr）：100V正向电压（VF）：0.79V浪涌电流（Ifsm）：120A漏电压（Ir）：10uA工作温度范围：-55℃～+150℃反向恢复时间（Trr）：<5nS是否进口：是产品特性：肖特基二极管产品类型：肖特基二极管针脚数：3芯片尺寸：86mil芯片个数：2芯片材质：Mikron芯片材料：Si功耗：低是否高频：是同系列相同型号：MBR1040CT MBR10100FCT,MBR10100F,MBR10100HMBR10100CT是一款常规型肖特基二极管，使用频率高应用领域广泛在高频电源电源中寻常可见。

它的主要电性参数为最大正向整流10安培，最大反向耐电压为100V，都被大家广为熟知。

那么有关于它的封装问题，则常常令工程或者采购朋友们傻傻分不清楚。

既有铁头封装又有全塑封封装等之分,实在让人选择头疼，下面ASEMI工程就为大家解开这背后的奥秘。

肖特基二极管MBR10100FCT-用铁头封装散热性表现更佳这款肖特基二极管封装，就是为解决散热性问题的铁头封装。

采用铁头封装的型号打标方式为MBR10100CT与全塑封装相区别。

这种封装能大幅提升电源的有效散热效率，针对发热严重或者对散热要求高的电路非常适用。

ASEMI肖特基二极管MBR10100FCT-用全塑封装绝缘性更好我们通常所说采用塑封或者全塑封，就是指MBR10100FCT肖特基二极管内部框架、芯片、焊片等等电路全部被一体包封住，与外界隔绝。

它所采用的材料是环氧树脂，这种高级环氧材料具有非常好的抗热性,防氧化性及绝缘性都非常好。

我们知道MBR10100FCT的下游应用领域多为电源高频整流环节,所以对安全性要求比较高，需要MBR10100FCT拥有很好绝缘性来避免电路短路等故障发生。

正是这样，采用全塑封装的它能有效避免内部电路与外界接触，更好的保护电路安全。

MBRB20200CTT4G;MBRB20200CTG;MBRB20200CTT4;中文规格书,Datasheet资料

1
TJ = 25C 2 1 0.2 0.4 0.6 0.8 vF, INSTANTANEOUS VOLTAGE (V) 1
0.1 TJ = 25C
0.01 0 20 40 60 80 100 120 140 160 180 200 VR, REVERSE CURRENT (V)
Figure 1. Typical Forward Voltage (Per Leg)
MAXIMUM RATINGS (Per Leg)
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 134C) Per Leg Per Device Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = +137C) Per Leg Nonrepetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) Storage Temperature Range Operating Junction Temperature Voltage Rate of Change (Rated VR) Symbol VRRM VRWM VR IF(AV) 10 20 IFRM 20 IFSM IRRM Tstg TJ dv/dt 150 1.0 −65 to +175 −65 to +150 10,000 A A C C V/ms A Value 200 Unit V

MBRF20100CT-E34W;MBRF2090CT-E34W;MBRB20100CT-E34W;MBRB2090CT-E34W;中文规格书,Datasheet资料

MBR(F,B)2090CT & MBR(F,B)20100CTVishay General SemiconductorDocument Number: 89033For technical questions within your region, please contact one of the following:Dual Common-Cathode High-Voltage Schottky RectifierFEATURES •Trench MOS Schottky technology •Lower power losses, high efficiency •Low forward voltage drop •High forward surge capability •High frequency operation•Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)•Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B106 (for TO-220AB and ITO-220AB package) •Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/ECTYPICAL APPLICATIONSFor use in high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application.MECHANICAL DATACase: TO-220AB, ITO-220AB, TO-263ABMolding compound meets UL 94 V-0 flammability ratingBase P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102E3 suffix meets JESD 201 class 1A whisker test Polarity: As markedMounting Torque: 10 in-lbs maximumPRIMARY CHARACTERISTICSI F(AV) 2 x 10 A V RRM 90 V , 100 V I FSM 150 A V F 0.65 V T J max.150 °CTO-220ABMBR2090CT 1231KTO-263AB MAXIMUM RATINGS (T C = 25°C unless otherwise noted)PARAMETER S YMBOL MBR2090CT MBR20100CT UNITMaximum repetitive peak reverse voltage V RRM 90100V Working peak reverse voltage V RWM 90100V Maximum DC blocking voltageV DC 90100V Maximum average forward rectified current at T C = 133 °C total device per diodeI F(AV)20 10APeak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode I FSM 150 A Non-repetitive avalanche energy at T J = 25 °C, L = 60 mH per diodeE AS 130mJ Peak repetitive reverse current at t p = 2 µs, 1 kHz, T J = 38 °C ± 2 °C per diodeI RRM0.5AVoltage rate of change (rated V R ) dV/dt10 000V/µs Operating junction and storage temperature range T J , T STG - 65 to + 150°C Isolation voltage (ITO-220AB only)From terminal to heatsink t = 1 min V AC1500VMBR(F,B)2090CT & MBR(F,B)20100CTVishay General Semiconductor For technical questions within your region, please contact one of the following:Document Number: 89033Notes (1)Pulse test: 300 µs pulse width, 1 % duty cycle (2)Pulse test: Pulse width ≤ 40 msRATINGS AND CHARACTERISTICS CURVES (T A = 25 °C unless otherwise noted)ELECTRICAL CHARACTERISTICS (T C = 25°C unless otherwise noted)PARAMETER TE S T CONDITION S S YMBOL VALUE UNITMaximum instantaneous forward voltage per diode(1)I F = 10 AI F = 10 A I F = 20 AT C = 25 °C T C = 125 °C T C = 125 °C V F0.800.65 0.75VMaximum reverse current per diode at working peak reverse voltage (2)T J = 25 °C T J = 100 °CI R100 6.0µA mATHERMAL CHARACTERISTICS (T C = 25°C unless otherwise noted)PARAMETER S YMBOL MBR MBRF MBRB UNITTypical thermal resistance per diodeR θJA R θJC602.0-3.5602.0°C/WORDERING INFORMATION (Example)PACKAGE PREFERRED P/N UNIT WEIGHT (g)PACKAGE CODEBASE QUANTITYDELIVERY MODETO-220AB MBR20100CT -E3/4W 1.884W 50/tube T ube ITO-220AB MBRF20100CT -E3/4W 1.754W 50/tube T ube TO-263AB MBRB20100CT -E3/4W 1.384W 50/tube T ube TO-263ABMBRB20100CT -E3/8W1.388W800/reelT ape and reelFigure 1. Forward Current Derating CurveFigure 2. Maximum Non-Repetitive Peak Forward SurgeCurrent Per DiodeMBR(F,B)2090CT & MBR(F,B)20100CTVishay General SemiconductorDocument Number: 89033For technical questions within your region, please contact one of the following:Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 4. Typical Reverse Characteristics Per Diode Figure 5. Typical Junction Capacitance Per DiodeFigure 6. Typical Transient Thermal Impedance Per DiodeFigure 7. Typical Transient Thermal Impedance Per DiodeMBR(F,B)2090CT & MBR(F,B)20100CTVishay General Semiconductor For technical questions within your region, please contact one of the following:Document Number: 89033PACKAGE OUTLINE DIMENSIONS in inches (millimeters)Legal Disclaimer Notice VishayDisclaimerALL PRODU CT, PRODU CT SPECIFICATIONS AND DATA ARE SU BJECT TO CHANGE WITHOU T NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.Material Category PolicyVishay Intertechnology, Inc. hereb y certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.Revision: 12-Mar-121Document Number: 91000分销商库存信息:VISHAY-GENERAL-SEMICONDUCTORMBRF20100CT-E3/4W MBRF2090CT-E3/4W MBRB20100CT-E3/4W MBRB2090CT-E3/4W MBRB20100CT-E3/8W MBRB2090CT-E3/8W MBR2090CT-E3/4W MBR20100CT-E3/4W。

MBRB20100CT-TP;中文规格书,Datasheet资料

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