2N3904_D28Z中文资料
DA221中文资料
DA221中文资料Diodes1/4Switching diodeDA221M / DA221 / DA204U / DA204K DA228U / DA228K /UMR12Nz Applications Bias circuitsProtection circuitsz Features1) Three types of packages are available. (VMD3, EMD3, UMD3, SMD3)2) Two diode elements are connected in series (V F × 2) per circuit.z ConstructionSilicon epitaxial planarz Circuitz External dimensions (Unit : mm)Diodes2/4z MarkingUMD3DA204UDA228U UMD6UMR12NR12SMD3DA204KDA228KK BUKBU EMD3DA221KVMD3DA221Mz Absolute maximum ratings (T a=25°C)Type V RM (V)V R (V)I FM (mA)I O (mA)I surge (mA)(1μs)(TOTAL)Pd(mW)Tj(°C)Tstg(°C)DA2212020200100300150150?55 to +150DA221M 2020200100300150150?55 to +150DA204U 2020200100300200150?55 to +150DA228K 8080200100300200150?55 to +150UMR12N808020010030020015055 to +15055 to +150DA228U 8080200100300200150?55 to +150DA204K 2020200100300200150Peak reverse voltage Peak forward current Mean rectifying current Surge current Power dissipation Junction temperatureStoragetemperature DC reverse voltagez Electrical characteristics (T a=25°C)TypeForward voltageV F (V)Max.I R (μA)Max.Reverse current Fig.Cond.Cond.I F (mA)V R (V)DA221 1.0100.115 1 to 4DA221M 1.0100.115 1 to 45 to 9UMR12N1.210080DA204U 1.0100.115 1 to 40.1DA228U 1.210080 5 to 90.11.01015DA204K 1 to 40.1DA228K 1.210080 5 to 9Diodes3/4z Electrical characteristic curves (T a=25°C) (DA221, DA204U, DA204K) …Fig.1 to 4T a =125°CD1D1+D20.40.8 1.2 1.6 2.0 2.41001011.00.0175°C5°C25°C125°C75°C25°C25°CF O R W A R D C U R R E N T : I F (m A )FORWARD VOLTAGE : V F (V)Fig.1 Forward characteristicsF O R W A R D C U R R E N T : I F (m A )FORWARD VOLTAGE : V F (V)Fig.2 Forward characteristicsD2 125°CD1 100°C D2 100°CD1 75°C D2 75°C51015200.010.1110100D1 Ta=125°CR E V E R S E CU R R E N T : I R (n A )REVERSE VOLTAGE : V R (V)Fig.3 Reverse characteristics12510C A P A C I T A N C E B E T W E E N T E R M I N A L S : C T (p F )REVERSE VOLTAGE : V R (V)Fig.4 Capacitance between terminals characteristicsDiodes4/4(DA228U, DA228K, UMR12N) …Fig.5 to 9F O R W A R D C U R R E N T : I F (m A )FORWARD VOLTAGE : V F (V)Fig.5 Forward characteristics F O R W A R D C U R R E N T : I F(m A )FORWARD VOLTAGE : V F (V)Fig.6 Forward characteristics R E V E R S E C U R R EN T : I R (n A )REVERSE VOLTAGE : V R (V)Fig.7 Reverse characteristicsR E V E R S E C U R RE N T : I R (n A )REVERSE VOLTAGE : V R (V)Fig.8 Reverse characteristics110C A P A C I T A N C E B E T W E E N T E R M I N A L S : C T (p F )REVERSE VOLTAGE : V R (V)Fig.9 Capacitance between terminals characteristicsAppendixAbout Export Control Order in JapanProducts described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade ControlOrder in Japan.In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.Appendix1-Rev1.0。
技嘉P4主板电路图
U1A 6 HA[3..16] HA[3..16] HA16 HA15 HA14 HA13 HA12 HA11 HA10 HA9 HA8 HA7 HA6 HA5 HA4 HA3 HADSTB0HREQ4HREQ3HREQ2HREQ1HREQ0N5 N4 N2 M1 N1 M4 M3 L2 M6 L3 K1 L6 K4 K2 L5 H3 J3 J4 K5 J1 AB1 Y1 W 2 V3 U4 T5 W 1 R6 V2 T4 U3 P6 U1 T2 R3 P4 P3 R2 T1 R5 A16 A15 A14 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 ADSTB0 REQ4 REQ3 REQ2 REQ1 REQ0 A35 A34 A33 A32 A31 A30 A29 A28 A27 A26 A25 A24 A23 A22 A21 A20 A19 A18 A17 ADSTB1
G1 AC1 V5 AA3 G2 L25 K26 K25 J26 U6 W 4 Y3 H6 D2 H5 E2 H2 F3 E3 AC3 W 5 G4 V6 AB25 F4 G5 F1 AB2 J6
HADS-
HADS- 6 R3
BNR-
BNR- 6 39/6/X
C
C
VCORE
BC19 10U/12/X
10U/12/X5R 10U/12/X
6 HA[17..31]
HA[17..31] HA31 HA30 HA29 HA28 HA27 HA26 HA25 HA24 HA23 HA22 HA21 HA20 HA19 HA18 HA17 HADSTB1-
VCORE
HINITHLOCKHLOCK- 6
HINIT- 13,15
技嘉 P4主板 电路图
TO 2SK3296
PCB1.0 CHANGE TO PCB2.0 REMOVE I/O PANELÅK¤ù ADD CT5880
Title Size Custom Date:
5 4 3 2
20AA
GIGABYTE
BOM & PCB MODIFY HISTORY
Document Number Rev
B
BC34 10U/12/X
BC35 10U/12/X
BC36 10U/12/X
BC37 10U/12/X
BC29 10U/12/X
BC4 10U/12/X
BC6 10U/12/X5R
VCORE
WMT478_10
BC24 10U/12/X
DDR POWER POWER1 POWER2 CNR CT5880(SOUND) GAL,ASIC RTL8100 GPIO LIST PCI ROUNT LIST
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B
A
22
COMPONENT SIDE (0.5 oz. Copper) VCC SIDE (1 oz. Copper) GND SIDE (1 oz. Copper) SOLDER SIDE (0.5 oz. Copper)
20A
B
REMOVE LAN FUNCTION
B
BC5~11,BC14,BC17,BC18,BC21 10U/1206 CHANGE TO 10U/1206/X5R BC15,BC16,BC19,BC20,BC22,BC23,BC29,BC34,BC35,BC36,BC37 10U/12 REMOVE D39,D40,1N4001 REMOVE Q139 2N3904 REMOVE R1130 470/6,R1308 1K/6 ,R561 470/6 REMOVE C144 ,C145 1U/6 CHANGE 2.2U/8 Q50,Q52,Q54 NEC2SK3467 CHANGE R571,R584 3K/6 CHANGE TO 3.9K/6 R596 4.3K/6 CHANGE TO 3.9K/6 ADD C191 1U/6,EC59 330U/25/10X15,Q43 APL1084/TO252,R555 169/6/1,R556 100/6/1
贴片晶体管参数代码查询uvwxyz
BZX84-C3V6
Phi
C
SOT23
0.3W zener 3.6V±5%
W8
BZX84-C3V9
Phi
C
SOT23
0.3W zener 3.9V±5%
W8
BZV49C3V9
Zet
O
SOT89
1W zener 3.9V±5%
W9
BZX84-C4V3
Phi
C
SOT23
0.3W zener 4.3V±5%
WCs
BCR133T
Sie
N
SC75
npn dig 50V 0.1A 10k+10k
WCs
BCR133U
Sie
N
SOT457
npn dig 50V 0.1A 10k+10k
WCs
BCR133W
Sie
N
SOT323
npn dig 50V 0.1A 10k+10k
WCs
BCR133S
Sie
DN
SOT363
dual BCR133
WDs
BCR141
Sie
N
SOT23
npn 50V 0.1A dig 22k +22k
WDs
BCR141T
Sie
N
SC75
npn 50V 0.1A dig 22k +22k
WDs
BCR141W
Sie
N
SOT323
npn 50V 0.1A dig 22k +22k
WDs
BCR141S
2N3904
U92p
BSR17A
Phi
三极管9012_9013_9018的主要参数数据
三极管9012 9013 9018的主要参数数据9011,9012,9013,9014,8050,8550三极管的区别9011 NPN 30V 30mA 400mW 150MHz 放大倍数20-809012 PNP 50V 500mA 600mW 低频管放大倍数30-909013 NPN 20V 625mA 500mW 低频管放大倍数40-1109014 NPN 45V 100mA 450mW 150MHz 放大倍数20-908050 NPN 25V 700mA 200mW 150MHz 放大倍数30-1008550 PNP 40V 1500mA 1000mW 200MHz 放大倍数40-140详情如下：90系列三极管参数90系列三极管大多是以90字为开头的，但也有以ST90、C或A90、S90、SS90、UTC90开头的，它们的特性及管脚排列都是一样的。
9011 结构：NPN集电极-发射极电压 30V集电极-基电压 50V射极-基极电压 5V集电极电流 0.03A耗散功率 0.4W结温 150℃特怔频率平均 370MHZ放大倍数：D28-45 E39-60 F54-80 G72-108 H97-146 I132-198 9012 结构：PNP集电极-发射极电压 -30V集电极-基电压 -40V射极-基极电压 -5V集电极电流 0.5A耗散功率 0.625W结温 150℃特怔频率最小 150MHZ放大倍数：D64-91 E78-112 F96-135 G122-166 H144-220 I190-3009013 结构：NPN集电极-发射极电压 25V集电极-基电压 45V射极-基极电压 5V集电极电流 0.5A耗散功率 0.625W结温 150℃特怔频率最小 150MHZ放大倍数：D64-91 E78-112 F96-135 G122-166 H144-220 I190-300 9014 结构：NPN集电极-发射极电压 45V集电极-基电压 50V射极-基极电压 5V集电极电流 0.1A耗散功率 0.4W结温 150℃特怔频率最小 150MHZ放大倍数：A60-150 B100-300 C200-600 D400-1000 9015 结构：PNP集电极-发射极电压 -45V集电极-基电压 -50V射极-基极电压 -5V集电极电流 0.1A耗散功率 0.45W结温 150℃特怔频率平均 300MHZ放大倍数：A60-150 B100-300 C200-600 D400-1000 9016 结构：NPN集电极-发射极电压 20V集电极-基电压 30V射极-基极电压 5V集电极电流 0.025A耗散功率 0.4W结温 150℃特怔频率平均 620MHZ放大倍数：D28-45 E39-60 F54-80 G72-108 H97-146 I132-198 9018 结构：NPN集电极-发射极电压 15V集电极-基电压 30V射极-基极电压 5V集电极电流 0.05A耗散功率 0.4W结温 150℃特怔频率平均 620MHZ放大倍数：D28-45 E39-60 F54-80 G72-108 H97-146 I132-198三极管85508550是一种常用的普通三极管。
MMBT3904;2N3904TF;2N3904TFR;PZT3904;2N3904BU;中文规格书,Datasheet资料
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Thermal Characteristics T a = 25°C unless otherwise noted* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".** Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm 2.V EBO Emitter-Base Voltage6.0V I C Collector Current - Continuous200mA T J, T stgOperating and Storage Junction Temperature Range-55 to +150°CSymbolParameterMax.Units2N3904*MMBT3904**PZT3904P D Total Device Dissipation Derate above 25°C6255.03502.81,0008.0mW mW/°C R θJC Thermal Resistance, Junction to Case 83.3°C/W R θJAThermal Resistance, Junction to Ambient200357125°C/W* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% Ordering Information f = 10Hz to 15.7kHzSWITCHING CHARACTERISTICSt d Delay Time V CC = 3.0V, V BE = 0.5VI C = 10mA, I B1 = 1.0mA 35nst r Rise Time35nst s Storage Time V CC = 3.0V, I C = 10mA,I B1 = I B2 = 1.0mA 200nst f Fall Time50nsPart Number Marking Package Packing Method Pack Qty 2N3904BU2N3904TO-92BULK10000 2N3904TA2N3904TO-92AMMO2000 2N3904TAR2N3904TO-92AMMO2000 2N3904TF2N3904TO-92TAPE REEL2000 2N3904TFR2N3904TO-92TAPE REEL2000 MMBT39041A SOT-23TAPE REEL3000 MMBT3904_D87Z1A SOT-23TAPE REEL10000 PZT39043904SOT-223TAPE REEL2500Auto-SPM¥AX-CAP¥*BitSiC®Build it Now¥CorePLUS¥CorePOWER¥CROSSVOLT¥CTL¥Current Transfer Logic¥DEUXPEED®Dual Cool™ EcoSPARK®EfficientMax¥ESBC¥®Fairchild®Fairchild Semiconductor®FACT Quiet Series¥FACT®FAST®FastvCore¥FETBench¥FlashWriter®*FRFET®Global Power Resource SMGreen FPS¥Green FPS¥ e-Series¥G max¥GTO¥IntelliMAX¥ISOPLANAR¥Making Small Speakers Sound Louderand Better™MegaBuck¥MICROCOUPLER¥MicroFET¥MicroPak¥MicroPak2¥MillerDrive¥MotionMax¥Motion-SPM¥mWSaver¥OptoHiT¥OPTOLOGIC®OPTOPLANAR®®PowerTrench®PowerXS™Programmable Active Droop¥QFET®QS¥Quiet Series¥RapidConfigure¥¥Saving our world, 1mW/W/kW at a time™SignalWise¥SmartMax¥SMART START¥SPM®STEALTH¥SuperFET®SuperSOT¥-3SuperSOT¥-6SuperSOT¥-8SupreMOS®SyncFET¥Sync-Lock™®*TinyBoost¥TinyBuck¥TinyCalc¥TinyLogic®TINYOPTO¥TinyPower¥TinyPWM¥TinyWire¥TranSiC®TriFault Detect¥TRUECURRENT®*P SerDes¥UHC®Ultra FRFET¥UniFET¥VCX¥VisualMax¥VoltagePlus¥XS™* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a)are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, orsystem whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.ANTI-COUNTERFEITING POLICYFairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website,, under Sales Support.Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.PRODUCT STATUS DEFINITIONSDefinition of TermsDatasheet Identification Product Status Definition分销商库存信息:FAIRCHILDMMBT39042N3904TF2N3904TFRPZT39042N3904BU MMBT3904_D87Z 2N3904TA2N3904TAR2N3904_J05Z2N3904CBU2N3904CTA2N3904NLBU2N3904_D10Z2N3904_D28Z2N3904_D81Z2N3904_J18Z2N3904_J25Z2N3904_J61Z2N3904_D27ZS00Z。
常用三极管参数大全
玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理。
2N5401中文资料(motorola)中文数据手册「EasyDatasheet - 矽搜」
INCHES
DIM MIN MAX A 0.175 0.205 B 0.170 0.210 C 0.125 0.165 D 0.016 0.022 F 0.016 0.019 G 0.045 0.055 H 0.095 0.105 J 0.015 0.020 K 0.500 ––– L 0.250 ––– N 0.080 0.105 P ––– 0.100 R 0.115 ––– V 0.135 –––
小信号特性
电流 - 增益 - 带宽产品 （IC = 10 MADC,VCE = 10伏直流,F = 100兆赫）
输出电容
（VCB = 10 VDC,IE = 0,F = 1.0兆赫）
小信号电流增益
（IC = 1.0 MADC,VCE = 10伏直流,F = 1.0千赫）
噪声系数
(IC = 250 µAdc, VCE = 5.0伏,RS = 1.0千欧,F = 1.0千赫）
IC
600
PD
625
5.0
器件总功耗@ TC = 25°C 减免上述25℃
PD
1.5
12
工作和存储结 温度范围
TJ, Tstg - 55到+150
热特性
特性
符号
Max
热阻,结到环境 热阻,结到外壳
电气特性
RqJA
200
RqJC
83.3
（TA = 25°C除非另有说明）
特性
断特性
集电极 - 发射极击穿电压（1） (IC = 1.0 mAdc, IB = 0)
0.1
0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0
10 20 30 50 100
IC,集电极电流（mA）
SN74LS28N中文资料
Copyright © 1988, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date.Products conform to specifications per the terms of Texas Instrumentsstandard warranty. Production processing does not necessarily includetesting of all parameters.POST OFFICE BOX 655303 • DALLAS, TEXAS 752652POST OFFICE BOX 655303 • DALLAS, TEXAS 752653 POST OFFICE BOX 655303 • DALLAS, TEXAS 752654POST OFFICE BOX 655303 • DALLAS, TEXAS 75265元器件交易网IMPORTANT NOTICETexas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinueany product or service without notice, and advise customers to obtain the latest version of relevant informationto verify, before placing orders, that information being relied on is current and complete. All products are soldsubject to the terms and conditions of sale supplied at the time of order acknowledgement, including thosepertaining to warranty, patent infringement, and limitation of liability.TI warrants performance of its semiconductor products to the specifications applicable at the time of sale inaccordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extentTI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarilyperformed, except those mandated by government requirements.CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OFDEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICALAPPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, ORWARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHERCRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TOBE FULLY AT THE CUSTOMER’S RISK.In order to minimize risks associated with the customer’s applications, adequate design and operatingsafeguards must be provided by the customer to minimize inherent or procedural hazards.TI assumes no liability for applications assistance or customer product design. TI does not warrant or representthat any license, either express or implied, is granted under any patent right, copyright, mask work right, or otherintellectual property right of TI covering or relating to any combination, machine, or process in which suchsemiconductor products or services might be or are used. TI’s publication of information regarding any thirdparty’s products or services does not constitute TI’s approval, warranty or endorsement thereof.Copyright © 1999, Texas Instruments Incorporated。
2N3904_datasheet
2N3903, 2N39042N3903 is a Preferred DeviceGeneral Purpose TransistorsNPN SiliconMAXIMUM RATINGSTHERMAL CHARACTERISTICS (Note 1.)Device Package Shipping ORDERING INFORMATION2N3903TO–925000 Units/Box Preferred devices are recommended choices for future use and best overall value.2N3903RLRM TO–922000/Ammo Pack 2N3904TO–925000 Units/Box 2N3904RLRA TO–922000/T ape & Reel 2N3904RLRE TO–922000/T ape & Reel 2N3904RLRM TO–922000/Ammo Pack 2N3904RLRP TO–922000/Ammo Pack 2N3904RL1TO–922000/T ape & Reel 2N3904ZL1TO–922000/Ammo PackELECTRICAL CHARACTERISTICS (T= 25°C unless otherwise noted)ON CHARACTERISTICSSMALL–SIGNAL CHARACTERISTICSSWITCHING CHARACTERISTICSFigure 1. Delay and Rise TimeEquivalent Test Circuit Figure 2. Storage and Fall TimeEquivalent Test Circuit-ā0010 < t 1 < 500 m * T otal shunt capacitance of test jig and connectorsTYPICAL TRANSIENT CHARACTERISTICSFigure 3. Capacitance REVERSE BIAS VOLTAGE (VOLTS)2.03.05.07.0101.0Figure 4. Charge DataI C , COLLECTOR CURRENT (mA)C A P A C I T A N C E (p F )T J = 25°C T J = 125°C7010020030050050T I M E (n s )5Figure 7. Storage Time I C , COLLECTOR CURRENT (mA)Figure 8. Fall TimeI C , COLLECTOR CURRENT (mA)1030720701002003005005051030720t , S T O R A G E T I M E (n s )s ′TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICSNOISE FIGURE VARIATIONS(V CE = 5.0 Vdc, T A = 25°C, Bandwidth = 1.0 Hz)Figure 9.f, FREQUENCY (kHz)46810122Figure 10.R S , SOURCE RESISTANCE (k OHMS)N F , N O I S E F I G U R E (d B )h PARAMETERS(V CE = 10 Vdc, f = 1.0 kHz, T A = 25°C)Figure 11. Current GainI C , COLLECTOR CURRENT (mA)7010020030050Figure 12. Output AdmittanceI C , COLLECTOR CURRENT (mA)h , C U R R E N T G A I Nh , O U T P U T A D M I T T A N C E ( m h o s )Figure 13. Input Impedance I C , COLLECTOR CURRENT (mA)Figure 14. Voltage Feedback RatioI C , COLLECTOR CURRENT (mA)3010050510202.03.05.07.0101.00.10.21.02.0 5.00.5100.30.5 3.00.72.05.010201.00.20.5o e h , V O L T A G E F E E D B A C K R A T I O (X 10 )r e h , I N P U T I M P E D A N C E (k O H M S )i e 0.10.21.02.0 5.0100.30.5 3.00.10.21.02.0 5.0100.30.5 3.0210.10.21.02.0 5.0100.30.5 3.0f e m -4TYPICAL STATIC CHARACTERISTICSFigure 15. DC Current GainI C , COLLECTOR CURRENT (mA)0.30.50.71.02.00.2h , D C C U R R E N T G A I N (N O R M A L I Z E D )0.1F E Figure 16. Collector Saturation RegionI B , BASE CURRENT (mA)0.40.60.81.00.2V , C O L L E C T O R E M I T T E R V O L T A G E (V O L T S )0CE Figure 17. “ON” Voltages I C , COLLECTOR CURRENT (mA)0.40.60.81.01.20.2Figure 18. Temperature CoefficientsI C , COLLECTOR CURRENT (mA)V , V O L T A G E (V O L T S )PACKAGE DIMENSIONSTO–92TO–226AACASE 29–11NOTES:1.DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.CONTOUR OF PACKAGE BEYOND DIMENSION RIS UNCONTROLLED.4.LEAD DIMENSION IS UNCONTROLLED IN P ANDBEYOND DIMENSION K MINIMUM.DIM MIN MAX MIN MAXMILLIMETERSINCHESA0.1750.205 4.45 5.20B0.1700.210 4.32 5.33C0.1250.165 3.18 4.19D0.0160.0210.4070.533G0.0450.055 1.15 1.39H0.0950.105 2.42 2.66J0.0150.0200.390.50K0.500---12.70---L0.250--- 6.35---N0.0800.105 2.04 2.66P---0.100--- 2.54R0.115--- 2.93---V0.135--- 3.43---STYLE 1:PIN 1.EMITTER2.BASE3.COLLECTORSTYLE 14:PIN 1.EMITTER2.COLLECTOR3.BASEON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATIONJAPAN: ON Semiconductor, Japan Customer Focus Center4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031Phone: 81–3–5740–2700Email: r14525@。
2N3904中文资料(MAGNATEC)中文数据手册「EasyDatasheet - 矽搜」
芯片中文手册,看全文,戳
2N3904
电气特性
参数
V(BR)CEO* V(BR)CBO V(BR)EBO IBL ICEX
集电极 - 发射极击穿电压I 集电极 - 基极击穿电压 发射极 - 基极击穿电压
基截止电流
集电极 - 发射极截止电流
VCE(sat) 集电极 - 发射极饱和电压
测试条件
VCC = 3V
VBE = 0.5V
IC = 10mA VCC = 3V
IB1 = 1mA VBE = 0.5V
IB1 = I B2 = 1mA
Min.
300
Typ. 最大.部件
MHz
4
pF
8
pF
1
10
kW
1
40 mhmos
0.5
8 x 10
100
400
—
5
dB
Min.
Typ.
最 大 .部 件
测试条件
VCE = 20V f = 100MHz
IC = 10mA
VCB = 5V f = 1MHz
IE = 0
VBE = 0.5V f = 1MHz
IC = 0
VCE = 10V IC = 1mA f = 1kHz
VCE = 5V f = 1kHz
IC = 100 RS = 1k
mA W
(TA = 25°C除非另有说明）
tf
下降时间
(T A = 25°C除非另有说明）
测试条件
C = 1mA
m IC = 10 A m IE = 10 A
VCE = 30V
IB = 0 IE = 0 IC = 0
VEB = 3V
三极管9012_9013_9018的主要参数数据
三极管9012 9013 9018的主要参数数据9011,9012,9013,9014,8050,8550三极管的区别9011 NPN 30V 30mA 400mW 150MHz 放大倍数20-809012 PNP 50V 500mA 600mW 低频管放大倍数30-909013 NPN 20V 625mA 500mW 低频管放大倍数40-1109014 NPN 45V 100mA 450mW 150MHz 放大倍数20-908050 NPN 25V 700mA 200mW 150MHz 放大倍数30-1008550 PNP 40V 1500mA 1000mW 200MHz 放大倍数40-140详情如下：90系列三极管参数90系列三极管大多是以90字为开头的，但也有以ST90、C或A90、S90、SS90、UTC90开头的，它们的特性及管脚排列都是一样的。
9011 结构：NPN集电极-发射极电压 30V集电极-基电压 50V射极-基极电压 5V集电极电流 0.03A耗散功率 0.4W结温 150℃特怔频率平均 370MHZ放大倍数：D28-45 E39-60 F54-80 G72-108 H97-146 I132-198 9012 结构：PNP集电极-发射极电压 -30V集电极-基电压 -40V射极-基极电压 -5V集电极电流 0.5A耗散功率 0.625W结温 150℃特怔频率最小 150MHZ放大倍数：D64-91 E78-112 F96-135 G122-166 H144-220 I190-3009013 结构：NPN集电极-发射极电压 25V集电极-基电压 45V射极-基极电压 5V集电极电流 0.5A耗散功率 0.625W结温 150℃特怔频率最小 150MHZ放大倍数：D64-91 E78-112 F96-135 G122-166 H144-220 I190-300 9014 结构：NPN集电极-发射极电压 45V集电极-基电压 50V射极-基极电压 5V集电极电流 0.1A耗散功率 0.4W结温 150℃特怔频率最小 150MHZ放大倍数：A60-150 B100-300 C200-600 D400-1000 9015 结构：PNP集电极-发射极电压 -45V集电极-基电压 -50V射极-基极电压 -5V集电极电流 0.1A耗散功率 0.45W结温 150℃特怔频率平均 300MHZ放大倍数：A60-150 B100-300 C200-600 D400-1000 9016 结构：NPN集电极-发射极电压 20V集电极-基电压 30V射极-基极电压 5V集电极电流 0.025A耗散功率 0.4W结温 150℃特怔频率平均 620MHZ放大倍数：D28-45 E39-60 F54-80 G72-108 H97-146 I132-198 9018 结构：NPN集电极-发射极电压 15V集电极-基电压 30V射极-基极电压 5V集电极电流 0.05A耗散功率 0.4W结温 150℃特怔频率平均 620MHZ放大倍数：D28-45 E39-60 F54-80 G72-108 H97-146 I132-198三极管85508550是一种常用的普通三极管。
贴片晶体管参数代码查询uvwxyz
dg VHF mosfet
V12
3SK131
Nec
UQ
SOT143
dg VHF mosfet
V12
3SK242
Nec
UQ
SOT343
dg VHF mosHale Waihona Puke etV133SK131
Nec
UQ
SOT143
dg VHF mosfet
V13
ZC932
Zet
C
SOT23
5 - 17pF hyperabrupt varicap
W83
BFP183T
Tfk
*
npn rf fT 7.4 GHz 10V 65mA
W92
BFP92AW
Tfk
*
SOT343
npn rf fT 6 GHz 15V 30mA
WB
2SD1383K
Roh
N
npn darlington p 2SB852K
WCs
BCR133
Sie
N
SOT23
npn dig 50V 0.1A 10k+10k
WFs
BCR08PN
Sie
DP
SOT363
pnp/npn dig 0.1A 2k2+47k
WFs
BCR112
Sie
N
SOT23
npn dig 50V 0.1A 4k7+4k7
WF0
TSDF1205W
Tfk
*
SOT343
12 GHz npn 5mA 4V
WF2
U3
BSS64
Phi
N
SOT23
120V 0.25A 0.2W
2N3904中文资料(diotec)中文数据手册「EasyDatasheet - 矽搜」
塑料材料具有UL分类94V-0 GehäusematerialUL94V-0 klassifiziert
标准包装录音中的弹药盒
在弹药,包装标准Lieferform gegurtet
NPN
625毫瓦
TO-92 (10D3) 0.18 g
最大额定值（T
A = 25°C)
集电极 - 发射极电压. - Kollektor发射极,Spannung 集电极基电压 - Kollektor个基本Spannung 发射基电压 - 发射极的基础,Spannung 功耗 - Verlustleistung 集电极电流 - Kollektorstrom（DC） 结温 - Sperrschichttemperatur 储存温度 - Lagerungstemperatur
1 kΩ
–
hoe
1 µS
–
hre
0.5*10 -4
–
– – 300 – –
400 10 kΩ 40 µS 8*10 -4
1 安装在P.C.主板为3 mm
2 铜垫在每个终端
蒙太奇奥夫Leiterplatte麻省理工学院3毫2 米Kupferbelag（Lötpad）jedem并吞
2 测试与脉冲吨
p = 300微秒,占空比≤2％ - Gemessen MIT Impulsen牛逼
VEB = 0.5 V, I C = i c = 0,F = 1兆赫 噪声系数 - Rauschzahl
VCE = 5 V, I C = 1 µA, R G = 1千欧中,f = 1千赫 开关时间 - Schaltzeiten（10％和90％之间）
延迟时间 上升时间
VCC = 3 V, V BE = 0.5 V I C = 10毫安,我 B1 = 1mA
2N3904中文资料_数据手册_参数
MMBT3904 / PZT3904 REV. B0 3典型的性能特征基极发射极导通电压对集电极电流 0.1 1 10 100 0.2 0.4 0.6 0.8 1一世 - 集电极电流（MA） C V = 5V CE 25°C 125°C - 40°C基极发射极饱和电压与集电极电流 0.1 1 10 100 0.4 0.6 0.8 1一世 - 集电极电流（MA） C β= 10 25°C 125°C - 40°C集电极 - 发射 极饱和电压与集电极电流 0.1 1 10 100 0.05 0.1 0.15一世 - 集电极电流（MA） 25°C C β= 10 125°C - 40°C集电极截止电流对环境温度 25 50 75 100 125 150 0.1 1 10 100 500 T - 环境温度（C）一个 V = 30V CB °电容与反向偏置电压 0.1 1 10 100 1 2 3 4五 10反向偏置电压（V） C OBO C IBO F = 1.0MHZ典型 的脉冲电流增益 VS COLLECTOR CURRENT 0.1 1 10 100 0 100 200 300 400 500一世 - 集电极电流（MA） - 40°C 25°C C V = 5V CE 125°C β βREV. B0 4 典型性能特征 （续）功率耗散VS环境温度 0 25 50 75 100 125 150 0 0.25 0.5 0.75 1温度（℃） ? SOT-223 SOT-23 TO-92噪声系数与频率 0.1 1 10 100 0 2 4 6 8 10 12 F - 频率（KHZ） V = 5.0V CE一世 = 100 μA，R = 500 Ω C小号一世 = 1.0MA K Ω C小号一世 = 0.5MA [R = 200 Ω C小号 ? Ω噪声系数与源阻力 0.1 1 10 100 0 2 4 6 8 10 12 [R - 源阻力（ ）一世 = 100 μA C一世 = 1.0MA C小号一世 = 50 μA C一世 = 5.0MA C 0 40 60 80 100 120 140 160 20 180电流增益和相角与频率 1 10 100 1000 0五 10 15 20 25三十 35 40 45 50 F - 频率（MHZ） θ V = 40V CE一世 = 10毫安 C H FE开启 时间VS集电极电流 110 100五 10 100 500一世 - 集电极电流（MA）一世 = I = B1 C B2 我 C 10 40V 15V 2.0V ? @ V = 0V CB D ? @ V = 3.0V CC [R上升时间VS 集电极电流 1 10 100五 10 100 500一世 - 集电极电流（MA）一世 = I = B1 C B2 我 C 10 ? = 125℃ ? = 25℃ ? V = 40V CC ? Ω θ μA ? Ω μA μA Ω Ω μA （K Ω）
三相异步电机产品型号
三相异步电机产品型号seek； pursue； go/search/hanker after； crave； court； woo； go/run afterY系列电动机的型号由四部分组成：第一部分汉语拼音字母Y表示异步电动机；第二部分数字表示机座中心高机座不带底脚时,与机座带底脚时相同；第三部分英文字母为机座长度代号S-短机座、M-中机座、L-长机座,字母后的数字为铁心长度代号；Y表示异步电动机80第二部分数字表示机座中心高毫米数机座不带底脚时,与机座带底脚时相同；M第三部分英文字母为机座长度代号S-短机座、M-中机座、L-长机座,字母后的数字为铁心长度代号；1-字母后的数字为铁心长度代号；－2第四部分横线后的数字为电动机的极数,这是一台4极电动机Y电机是单绕组星形接线Y2电机是双绕组星形接线Y2电机一般都是大功率电动机,中性点引出至出线端盒Y系列三相异步电机具有高效、节能、性能好、振动小、噪声低、寿命长、可靠性高、维护方便、起动转矩大等优点.安装尺寸和功率等级完全符合IEC标准.采用B级绝缘,外壳防护等级为IP44,冷却方式IC411.Y系列电动机应用于无特殊要求的机械设备、农业机械、食品机械、风机、水泵、机床、拌搅机、空气压缩机等.Y2系列三相异步电动机是专为欧洲市场设计的三相异步电动机、电机出线盒置于电机机壳顶部、整机结构紧凑、外形美观大方,安装尺寸符合IEC标准,具有高效、节能、起动转矩大,使用维护方便等特点.绝缘等级：F,防护等级：IP54或IP55电压：380V或415V,频率：50Hz或60Hz冷却方式：IC411Y3系列三相异步电动机具有结构新颖、造型美观、效率高、噪音低、可靠性高等特点,采用冷轧硅钢片为导磁材料,效率符合欧洲eff2标准,性能指标达到目前西门子公司同类产品的水平,已居国外同类产品的先进水平.是Y2系列电动机的更新换代产品.外壳防护等级为IP55.外型主要区别就是其接线盒有差异,其他外型无特殊地方.YBK2YBK煤矿井下隔爆型三相异步电动机ZMKJ005 产品名称：YBK2煤矿井下隔爆三相异步电动机,YBJ绞车用隔爆型三相异步电动机,YBS刮板输机用三相异步电动机,YBB矿用隔爆型三相异步电动机YBK2-132S1-2代表意义：YB：隔爆；K：煤矿用；2：第二次设计；132：机座中心高；S1：短机座,第一种铁心长度M-中,L-长；2：极数.YBK2系列电动机是YBK系列电动机的更新换代产品,为煤矿井下防爆电机.外壳为钢板焊接结构.按爆炸性气体环境用电气设备第2部分隔爆型“d”的规定,制成隔爆型,防爆标志为“Exdl”.适用于有甲烷或煤尘爆炸危险的煤矿井下设备.电动机绝缘等级为F级,工作电压为380V/660V或660V/1140V.YBK2电动机品种规格形成系列产品,电动机的额定功率为：、、11KW、15KW、、22KW、30KW、37KW、45KW、55KW、75KW、90KW、110KW、132KW、160KW、200KW等；中心高：H80--H355mm.三相YBK2电机、YBB电机、YB电机、YBJ电机、YBS电机、DSB电机、JS40减速机三相异步电动机的分类：1、按三相异步电动机的转子结构形式可分为鼠笼式电动机和绕线式电动机.2、按三相异步电动机的防护型式可分为开启式IP11三相异步电动机、防护式三相异步电动机IP22及IP23、封闭式三相异步电动机IP44、防爆式三相异步电动机.开启式IP11：价格便宜,散热条件最好,由于转子和绕组暴露在空气中,只能用于干燥、灰尘很少又无腐蚀性和爆炸性气体的环境.防护式IP22及IP23：通风散热条件也较好,可防止水滴、铁屑等外界杂物落入电动机内部,只适用于较干燥且灰尘不多又无腐蚀性和爆炸性气体的环境.封闭式IP44：适用于潮湿、多尘、易受风雨侵蚀,有腐蚀性气体等较恶劣的工作环境,应用最普遍.3、按三相异步电动机的通风冷却方式可分为自冷式三相异步电动机、自扇冷式三相异步电动机、他扇冷式三相异步电动机、管道通风式三相异步电动机.4、按三相异步电动机的安装结构形式可分为卧式三相异步电动机、立式三相异步电动机、带底脚三相异步电动机、带凸缘三相异步电动机.5、按三相异步电动机的绝缘等级可分为E级、B级、F级、H级三相异步电动机.6、按工作定额可分为连续三相异步电动机、断续三相异步电动机、间歇三相异步电动机.。
2N3904中文资料_数据手册_参数
2000年11月 - 修订版3 1出版订单编号： 2N3903 / D 2N3903,2N3904 2N3903是首选设备一般用途晶体管 NPN硅大额定值评分符 号值单元集电极 - 发射极电压 VCEO 40 VDC集电极 - 基极电压 VCBO 60 VDC发射极 - 基极电压 VEBO 6 VDC集电极电流 - 连 续我知道了 200 MADC器件总功耗 @ TA = 25°C减免25以上 C PD 625 5毫瓦毫瓦/ C器件总功耗 @ TC = 25°C减免25以上 C PD 1.5 12瓦毫瓦/ C操作和存储连接温度范围 TJ，TSTG -55到 +150 C 热特性 （注1）特性符号马克斯单元热阻，结到环境 [R θJA 200 °C / W热阻，交界处至凯斯 [R θJC 83.3 °C / W 1.除JEDEC要求外还指示数据.设备包运输订购信息 2N3903 TO-92 TO-92情况29风格1 5000个单位/箱 3 2 1首选设备是未来使用的推荐选择和好的整体价值. 2N3903RLRM TO-92 2000 / AMMO PACK集电极 3 2基础 1辐射源 2N3904 TO-92 5000个单位/箱 2N3904RLRA TO-92 2000 /卷带式 2N3904RLRE TO-92 2000 /卷带式 2N3904RLRM TO-92 2000 / AMMO PACK风格1 ? =年份 WW =工作周标记图 2N 3903 YWW 2N3904RLRP TO-92 2000 / AMMO PACK 2N 3904 YWW 2N3904RL1 TO-92 2000 /卷带式 2N3904ZL1 TO-92 2000 / AMMO PACK 3图1.延迟和上升时间等效测试电路图2.存储和下降时间等效测试电路 +3 V 275 10 K 1N916 CS <4 PF * +3 V 275 10 K CS <4 PF * <1NS -0.5V +10.9 V 300纳秒 DUTY CYCLE = 2％ <1NS +10.9 V DUTY CYCLE = 2％ T1 0 10 <T1 <500MS *测试夹具和连接器的总并联电容典型的瞬态特性图3.电容反向偏置电压（伏特） 2.0 3.0 5 7 10 1.0 0.1图4.收费数据 IC，集电极 电流（MA） 5000 1.0 VCC = 40V IC / IB = 10 3000 2000 1000 500 300 200 700 100 50 70 2.0 3.0 5.0 7.0 10 20 30 50
2N3904中文资料(JIANGSU CHANGJIANG)中文数据手册「EasyDatasheet - 矽搜」
TO-92塑封装晶体管
2N3904
特点 切换NPN硅外延平面晶体管和 放大器的应用 作为互补型,PNP晶体管2N3906是 推荐 该晶体管也是在SOT-23的情况下与现有 类型名称MMBT3904
1. EMITTER 2. BASE 3. COLLECTOR
COLLECTOR CURRENT
Ic
(mA)
COLLECTOR CURRENT
IC
(mA)
IC
200 100 30
——
VBE
VCE =5V
10
Co b / C ib
——
Cib
V CB / V EB
f=1MHz IE =0/I C =0 Ta=25 ℃
(mA) Ta=100 ℃
C
(pF) Cob C
B1=1mA
V V MH Z ns ns ns ns
V CC=3V, I C=10mA I B1=I B2=1mA
分类 Rank Range
OF
h FE1
O 100-200 Y 200-300 G 300-400
芯片中文手册,看全文,戳
典型特征
100
2N3904
1000
静态特性
hF E
Min 60 40 6
Typ
Max
Unit V V V
0.1 0.1 0.1 100 60 30 0.3 0.95 300 35 35 200 50 400
μA μA μA
DC电流增益
集电极 - 发射极饱和电压 基地发射极饱和电压 转换频率 延迟时间 上升时间 贮存时间 下降时间
I C=50mA, I B=5mA I C=50mA, I B=5mA V CE=20V,I C=10mA,f=100MHz V CC=3V,V BE=0.5V, I C=10mA,I
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ON CHARACTERISTICS*
hFE DC Current Gain IC = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 40 70 100 60 30 300
SWITCHING CHARACTERISTICS
td tr ts tf Delay Time Rise Time Storage Time Fall Time VCC = 3.0 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1.0 mA VCC = 3.0 V, IC = 10mA IB1 = IB2 = 1.0 mA 35 35 200 50 ns ns ns ns
2001 Fairchild Semiconductor Corporation
2N3904/MMBT3904/PZT3904, Rev A
元器件交易网
2N3904 / MMBT3904 / PZT3904
NPN General Purpose Amplifier
(continued)
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
100
1 10 R S - SOURCE RESISTANCE ( kΩ )
100
Current Gain and Phase Angle vs Frequency
50 45 40 35 30 25 20 15 10 5 0 h fe
PD - POWER DISSIPATION (W)
Power Dissipation vs Ambient Temperature
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current IC = 1.0 mA, IB = 0 IC = 10 µA, IE = 0 IE = 10 µA, IC = 0 VCE = 30 V, VEB = 3V VCE = 30 V, VEB = 3V 40 60 6.0 50 50 V V V nA nA
元器件交易网
2N3904 / MMBT3904 / PZT3904
2N3904
MMBT3904
C
PZT3904
C
E C B
E C
TO-92
E
SOT-23
Mark: 1A
B
SOT-223
B
NPN General Purpose Amplifier
This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.
I C = 1.0 mA
I C = 1.0 mA R S = 200Ω I C = 50 µA R S = 1.0 kΩ I C = 0.5 mA R S = 200Ω
V CE = 5.0V 10
I C = 5.0 mA
8 6 4 2 0 0.1
I C = 50 µA
I C = 100 µA
1 10 f - FREQUENCY (kHz)
VCE(sat) VBE(sat)
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
0.65
0.2 0.3 0.85 0.95
V V V V
SMALL SIGNAL CHARACTERISTICS
fT Cobo Cibo NF Current Gain - Bandwidth Product Output Capacitance Input Capacitance Noise Figure IC = 10 mA, VCE = 20 V, f = 100 MHz VCB = 5.0 V, IE = 0, f = 1.0 MHz VEB = 0.5 V, IC = 0, f = 1.0 MHz IC = 100 µA, VCE = 5.0 V, RS =1.0kΩ,f=10 Hz to 15.7kHz 300 4.0 8.0 5.0 MHz pF pF dB
125 °C
300
2200 100 0 0.1
- 40 °C
0.05
- 40 °C
1 10 I C - COLLECTOR CURRENT (mA)
100
0.1
1 10 I C - COLLECTOR CURRENT (mA)
100
V - BASE-EMITTER ON VOLTAGE (V) BE(ON)
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
Thermal Characteristics
Symbol
PD RθJC RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N3904 625 5.0 83.3 200
ICBO- COLLECTOR CURRENT (nA) 500
CAPACITANCE (pF) 10
Capacitance vs Reverse Bias Voltage
f = 1.0 MHz
100 10 1 0.1
VCB = 30V
5 4 3 2
C obo C ibo
25
50 75 100 125 TA - AMBIENT TEMPERATURE ( °C)
0 20 40 60 80 100 120 140 160 180
1000
1
- CURRENT GAIN (dB)
SOT-223
0.75
θ - DEGREES
TO-92
θ
0.5
SOT-23
0.25
h
V CE = 40V I C = 10 mA 1 10 100 f - FREQUENCY (MHz)
150
1 0.1
1 10 REVERSE BIAS VOLTAGE (V)
100
元器件交易网
2N3904 / MMBT3904 / PZT3904
NPN General Purpose Amplifier
(continued)
Typical Characteristics
元器件交易网
2N3904 / MMBT3904 / PZT3904
NPN General Purpose Amplifier
(continued)
Typical Characteristics
500 400
125 °C
V CE = 5V
VCESAT- COLLECTOR-EMITTER VOLTAGE (V)
fe
0
0
25
50 75 100 TEMPERATURE (o C)
125
150
Turn-On Time vs Collector Current
Max
*MMBT3904 350 2.8 357 **PZT3904 1,000 8.0 125
Units
mW mW/°C °C/W °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
TA = 25°C unless otherwise noted
Parameter