FQPF13N50C中文资料

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FQP13N50C中文资料

--
--
IGSSF IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
--
--
--
--
1 10 100 -100
FQP13N50C FQPF13N50C
500
13
13 *
8
8*
52
52 *
± 30
860
13
19.5
4.5
195
48
1.56
0.39
-55 to +150
300
Units V A A A V mJ A mJ
V/ns W
W/°C °C
°C
Thermal Characteristics
Symbol RθJC RθJS RθJA
2.0 --
4.0
V
VGS = 10 V, ID = 6.5 A
-- 0.39 0.48
Ω
VDS = 40 V, ID = 6.5 A
(Note 4) --
15
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current - Pulsed

FQPF13N50CF中文资料

Notes:1. Repetitive Rating: Pulse width limited by maximum junction temperature2. L = 5.6mH, I AS = 13A, V DD = 50V, R G = 25 Ω, Starting T J = 25°C3. I SD ≤ 13A, di/dt ≤ 200A/µs, V DD ≤ BV DSS, Starting T J = 25°C4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%5. Essentially Independent of Operating Temperature Typical Characteristicsf = 1.0MHzC oss Output Capacitance--180235pF C rss Reverse Transfer Capacitance --2025pF Switching Characteristicst d(on)Turn-On Delay Time V DD = 250V, I D = 13A R G = 25Ω(Note 4, 5)--2560ns t r Turn-On Rise Time --100210ns t d(off)Turn-Off Delay Time --130270ns t f Turn-Off Fall Time --100210ns Q g Total Gate Charge V DS = 400V, I D = 13A V GS = 10V(Note 4, 5)--4356nC Q gs Gate-Source Charge --7.5--nC Q gd Gate-Drain Charge--18.5--nC Drain-Source Diode Characteristics and Maximum RatingsI S Maximum Continuous Drain-Source Diode Forward Current ----13A I SM Maximum Pulsed Drain-Source Diode Forward Current ----52A V SD Drain-Source Diode Forward Voltage V GS = 0V, I S = 13A---- 1.4V t rr Reverse Recovery Time V GS = 0V, I S = 13AdI F /dt =100A/µs (Note 4)--100160ns Q rrReverse Recovery Charge--0.35--µCUnclamped Inductive Switching Test Circuit & WaveformsLIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONSDefinition of TermsDatasheet Identification Product Status DefinitionAdvance Information Formative or InDesign This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.Preliminary First Production This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.No Identification Needed Full Production This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Rev. I19。

FAIRCHILD FQP13N50C FQPF13N50C 说明书

现货库存、技术资料、百科信息、热点资讯，精彩尽在鼎好!FQP13N50C/FQPF13N50CNotes:1. Repetitive Rating : Pulse width limited by maximum junction temperature2. L =6.0 mH, I AS = 13A, V DD = 50V, R G = 25 Ω, Starting T J = 25°C3. I SD ≤ 13A, di/dt ≤ 200A/µs, V DD ≤ BV DSS, Starting T J = 25°C4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%5. Essentially independent of operating temperatureV GS(th)Gate Threshold Voltage V DS = V GS , I D = 250 µA 2.0-- 4.0V R DS(on)Static Drain-Source On-ResistanceV GS = 10 V, I D = 6.5 A--0.390.48Ωg FSForward TransconductanceV DS = 40 V, I D = 6.5 A (Note 4)--15--SDynamic CharacteristicsC iss Input Capacitance V DS = 25 V, V GS = 0 V, f = 1.0 MHz--15802055pF C oss Output Capacitance--180235pF C rssReverse Transfer Capacitance--2025pFSwitching Characteristicst d(on)Turn-On Delay Time V DD = 250 V, I D = 13 A,R G = 25 Ω(Note 4, 5)--2560ns t r Turn-On Rise Time --100210ns t d(off)Turn-Off Delay Time --130270ns t f Turn-Off Fall Time --100210ns Q g Total Gate Charge V DS = 400 V, I D = 13 A,V GS = 10 V(Note 4, 5)--4356nC Q gs Gate-Source Charge --7.5--nC Q gdGate-Drain Charge--18.5--nCDrain-Source Diode Characteristics and Maximum RatingsI S Maximum Continuous Drain-Source Diode Forward Current ----13A I SM Maximum Pulsed Drain-Source Diode Forward Current----52A V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S = 13 A ---- 1.4V t rr Reverse Recovery Time V GS = 0 V, I S = 13 A,dI F / dt = 100 A/µs (Note 4)--410--ns Q rrReverse Recovery Charge-- 4.5--µCDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.FACT™FACT Quiet series™FAST ®FASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™I 2C™ImpliedDisconnect™ISOPLANAR™LittleFET™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC ®OPTOPLANAR™PACMAN™POP™Power247™PowerTrench ®QFET™QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™SILENT SWITCHER ®SMART START™SPM™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic ®TruTranslation™UHC™UltraFET ®VCX™ACEx™ActiveArray™Bottomless™CoolFET™CROSSVOLT ™DOME™EcoSPARK™E 2CMOS™EnSigna™Across the board. Around the world.™The Power Franchise™Programmable Active Droop™。

逆变器用到的IC

KA5M0365RYDTU 原装正品 06年份 FSC 6000 现货
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FQPF2N60C资料

100
150℃ 25℃
※ Notes :
1. 2.
2V5GS0μ=s0VPulse
Test
10-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
VGS = 0 V, IS = 2 A,
-- 230
--
ns
Qrr
Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4) --
1.0
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient
FQP2N60C 2.32 0.5 62.5
FQPF2N60C 5.5 -62.5
元器件交易网
FQP2N60C/FQPF2N60C
FQP2N60C/FQPF2N60C
600V N-Channel MOSFET
QFET TM
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

13n50场效应管参数

13n50场效应管参数13N50场效应管是一种常见的功率场效应管，具有很高的导通能力和电源效率。

以下是对13N50场效应管参数的详细介绍。

1. 器件结构与特征13N50场效应管由四个主要部分组成：栅、漏极、源极和衬底。

源极和漏极之间形成了一个N型道。

当栅极的电压变化时，栅电场的影响将使N型道中的电子浓度发生变化，从而影响导通区域的电阻。

13N50场效应管的主要特征是其低漏电流和快速开关速度。

由于其低漏电流，它具有极高的电源效率。

13N50场效应管还具有较低的开关损失和较少的热管理需求。

2. 主要参数- 额定电压（VDS）：13N50场效应管的额定电压为500V。

- 额定电流（ID）：13N50场效应管的额定电流为13A。

- 静态电阻（RDS(on)）：13N50场效应管的静态电阻为0.55Ω。

- 最大功耗（PD）：13N50场效应管的最大功耗为240W。

- 工作温度范围：13N50场效应管的工作温度范围为-55℃至150℃。

- 开关速度：13N50场效应管的开关速度较快，一般在几纳秒到几十纳秒之间。

3. 应用领域13N50场效应管可以在各种应用领域中使用，包括驱动电机、DC-DC转换器和照明等。

在电机驱动应用中，13N50场效应管可用于控制电机的转速和转向。

它们还可以用于电源开关，特别是在变换器电路中。

在DC-DC转换器中，13N50场效应管可用于控制输出电压。

这些转换器可以将一个电压转换为更高或更低的电压。

它们可以将12伏特的电压升高到24伏特，以使其适合某些应用程序。

在照明应用中，13N50场效应管可用于控制LED照明系统的电流和亮度。

这些场效应管还可以用于LED屏幕和平板电脑背光等其他应用领域。

随着各种电子设备的需求不断增加，13N50场效应管已经成为许多应用领域中的理想选择之一，其特有的性能和参数使其具有广泛的适用性和较广的应用场景。

13N50场效应管广泛应用于各种电子设备中，在工业、通讯、航空航天等领域都有着广泛的应用。

FAIRCHILD FQPF9N30 数据手册

现货库存、技术资料、百科信息、热点资讯，精彩尽在鼎好!F Q P F 9N 30FQPF9N30300V N-Channel MOSFETGeneral DescriptionThese N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters,switch mode power supply.TO-220FG SDFQPF9N30(Note 4)(Note 4, 5)(Note 4, 5) (Note 4)Electrical Characteristics T C= 25°C unless otherwise notedNotes:1. Repetitive Rating : Pulse width limited by maximum junction temperature2. L = 19.4mH, I AS = 6.0A, V DD = 50V, R G = 25 Ω, Starting T J = 25°C3. I SD ≤9.0A, di/dt ≤ 200A/µs, V DD ≤ BV DSS, Starting T J = 25°C4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%5. Essentially independent of operating temperatureSymbol Parameter Test Conditions Min Typ Max UnitsOff CharacteristicsBV DSS Drain-Source Breakdown Voltage V GS = 0 V, I D = 250 µA300----V ∆BV DSS / ∆T J Breakdown Voltage Temperature CoefficientI D = 250 µA, Referenced to 25°C --0.28--V/°C I DSS Zero Gate Voltage Drain Current V DS = 300 V, V GS = 0 V ----1µA V DS = 240 V, T C = 125°C ----10µA I GSSF Gate-Body Leakage Current, Forward V GS = 30 V, V DS = 0 V ----100nA I GSSRGate-Body Leakage Current, ReverseV GS = -30 V, V DS = 0 V-----100nAOn CharacteristicsV GS(th)Gate Threshold Voltage V DS = V GS , I D = 250 µA 3.0-- 5.0V R DS(on)Static Drain-Source On-ResistanceV GS = 10 V, I D = 3.0 A --0.350.45Ωg FSForward TransconductanceV DS = 50 V, I D = 3.0 A--4.2--SDynamic CharacteristicsC iss Input Capacitance V DS = 25 V, V GS = 0 V, f = 1.0 MHz--570740pF C oss Output Capacitance--120155pF C rssReverse Transfer Capacitance--1620pFSwitching Characteristicst d(on)Turn-On Delay Time V DD = 150 V, I D = 9.0 A,R G = 25 Ω--1640ns t r Turn-On Rise Time --120250ns t d(off)Turn-Off Delay Time --2765ns t f Turn-Off Fall Time --48110ns Q g Total Gate Charge V DS = 240 V, I D = 9.0 A,V GS = 10 V--1722nC Q gs Gate-Source Charge -- 3.9--nC Q gdGate-Drain Charge--9.2--nCDrain-Source Diode Characteristics and Maximum RatingsI S Maximum Continuous Drain-Source Diode Forward Current ---- 6.0A I SM Maximum Pulsed Drain-Source Diode Forward Current----24A V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S = 6.0 A ---- 1.5V t rr Reverse Recovery Time V GS = 0 V, I S = 9.0 A,dI F / dt = 100 A/µs--170--ns Q rrReverse Recovery Charge-- 1.4--µCF Q P F 9N 30FQPF9N30F Q P F 9N 30FQPF9N30F Q P F 9N 30TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a lifesupport device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status DefinitionAdvance InformationPreliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Formative or In DesignFirst ProductionFull ProductionNot In ProductionDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.QFET™QS™QT Optoelectronics™Quiet Series™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™UHC™FASTr™GlobalOptoisolator™GTO™HiSeC™ISOPLANAR™MICROWIRE™OPTOLOGIC™OPTOPLANAR™POP™PowerTrench ®Rev. F1ACEx™Bottomless™CoolFET™CROSSVOLT™DOME™E 2CMOS TM EnSigna TM FACT™FACT Quiet Series™FAST ®VCX™。

FQPF12N60中文资料

Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
©2000 Fairchild Semiconductor International
Rev. A, April 2000
元器件交易网
FQPF12N60
ID , Drain Current [A]
Typical Characteristics
DS(on) R [Ω], Drain-Source On-Resistance
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
PD
TJ, TSTG TL
Power Dissipation (TC = 25°C) - Derate above 25°C
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
FQPF12N60 600 5.8 3.7 23 ±30 790 5.8 5.5 4.5 55 0.44
-55 to +150
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge

FAIRCHILD FQPF3N80 数据手册

现货库存、技术资料、百科信息、热点资讯，精彩尽在鼎好!F Q P F 3N 80FQPF3N80800V N-Channel MOSFETGeneral DescriptionThese N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.TO-220FG SDFQPF3N80(Note 4)(Note 4, 5)(Note 4, 5) (Note 4)Electrical Characteristics T C= 25°C unless otherwise notedNotes:1. Repetitive Rating : Pulse width limited by maximum junction temperature2. L = 185mH, I AS = 1.8A, V DD = 50V, R G = 25 Ω, Starting T J = 25°C3. I SD ≤ 3.0A, di/dt ≤ 200A/µs, V DD ≤ BV DSS, Starting T J = 25°C4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%5. Essentially independent of operating temperatureSymbol Parameter Test Conditions Min Typ Max UnitsOff CharacteristicsBV DSS Drain-Source Breakdown Voltage V GS = 0 V, I D = 250 µA800----V ∆BV DSS / ∆T J Breakdown Voltage Temperature CoefficientI D = 250 µA, Referenced to 25°C --0.9--V/°C I DSS Zero Gate Voltage Drain Current V DS = 800 V, V GS = 0 V ----10µA V DS = 640 V, T C = 125°C ----100µA I GSSF Gate-Body Leakage Current, Forward V GS = 30 V, V DS = 0 V ----100nA I GSSRGate-Body Leakage Current, ReverseV GS = -30 V, V DS = 0 V-----100nAOn CharacteristicsV GS(th)Gate Threshold Voltage V DS = V GS , I D = 250 µA3.0-- 5.0V R DS(on)Static Drain-Source On-ResistanceV GS = 10 V, I D = 0.9 A -- 3.8 5.0Ωg FSForward TransconductanceV DS = 50 V, I D = 0.9 A -- 2.3--SDynamic CharacteristicsC iss Input Capacitance V DS = 25 V, V GS = 0 V, f = 1.0 MHz--530690pF C oss Output Capacitance--5775pF C rssReverse Transfer Capacitance--7.09.0pFSwitching Characteristicst d(on)Turn-On Delay Time V DD = 400 V, I D = 3.0 A,R G = 25 Ω--1540ns t r Turn-On Rise Time --4090ns t d(off)Turn-Off Delay Time --3070ns t f Turn-Off Fall Time --3070ns Q g Total Gate Charge V DS = 640 V, I D = 3.0 A,V GS = 10 V--1519nC Q gs Gate-Source Charge -- 3.5--nC Q gdGate-Drain Charge--7.7--nCDrain-Source Diode Characteristics and Maximum RatingsI S Maximum Continuous Drain-Source Diode Forward Current ---- 1.8A I SM Maximum Pulsed Drain-Source Diode Forward Current----7.2A V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S = 1.8 A ---- 1.4V t rr Reverse Recovery Time V GS = 0 V, I S = 3.0 A,dI F / dt = 100 A/µs--530--ns Q rrReverse Recovery Charge-- 2.8--µCF Q P F 3N 80FQPF3N80F Q P F 3N 80FQPF3N80F Q P F 3N 80TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.ACEx™Bottomless™CoolFET™CROSSVOLT™DOME™E2CMOS™EnSigna™FACT™FACT Quiet Series™FAST®FASTr™GlobalOptoisolator™GTO™HiSeC™ISOPLANAR™MICROWIRE™OPTOLOGIC™OPTOPLANAR™POP™PowerTrench®QFET™QS™QT Optoelectronics™Quiet Series™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™UHC™DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONSDefinition of TermsDatasheet Identification Product Status DefinitionAdvance Information Formative or InDesign This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.Preliminary First Production This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.No Identification Needed Full Production This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.VCX™。

FDP16N50中文资料

NOTES:1. Repetitive Rating: Pulse width limited by maximum junction temperature2. L = 5.5mH, I AS = 16A, V DD = 50V, R G = 25Ω, Starting T J = 25°C3. I SD ≤ 16A, di/dt ≤ 200A/µs, V DD ≤ BV DSS , Starting T J = 25°C4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%5. Essentially Independent of Operating Temperature Typical Characteristicsg FS Forward Transconductance V DS = 40V, I D = 8A (Note 4)--23--S Dynamic CharacteristicsC iss Input Capacitance V DS = 25V, V GS = 0V,f = 1.0MHz--14951945pF C oss Output Capacitance--235310pF C rss Reverse Transfer Capacitance --2030pF Switching Characteristicst d(on)Turn-On Delay Time V DD = 250V, I D = 16A R G = 25Ω(Note 4, 5)--4090ns t r Turn-On Rise Time --150310ns t d(off)Turn-Off Delay Time --65140ns t f Turn-Off Fall Time --80170ns Q g Total Gate Charge V DS = 400V, I D = 16A V GS = 10V(Note 4, 5)--3245nC Q gs Gate-Source Charge --8.5--nC Q gd Gate-Drain Charge--14--nCDrain-Source Diode Characteristics and Maximum RatingsI S Maximum Continuous Drain-Source Diode Forward Current ----9.2A I SM Maximum Pulsed Drain-Source Diode Forward Current ----37A V SD Drain-Source Diode Forward Voltage V GS = 0V, I S = 16A---- 1.4V t rr Reverse Recovery Time V GS = 0V, I S = 16AdI F /dt =100A/µs (Note 4)--490--ns Q rrReverse Recovery Charge-- 5.0--µCUnclamped Inductive Switching Test Circuit & WaveformsOF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONSDefinition of TermsDatasheet Identification Product Status DefinitionAdvance Information Formative or In Design This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.Preliminary First Production This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.No Identification Needed Full Production This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Rev. I22。

FQP6N80C中文资料

3.0 --
5.0
V
VGS = 10 V, ID = 2.75 A
-- 2.1 2.5
Ω
VDS = 50 V, ID = 2.75 A (Note 4) --
5.4
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
©2003 Fairchild Semiconductor Corporation
Rev. A, June 2003
元器件交易网
FQP6N80C/FQPF6N80C
Typical Characteristics
ID, Drain Current [A]
DS(ON) R [Ω ], Drain-Source On-Resistance
Features
• 5.5A, 800V, RDS(on) = 2.5Ω @VGS = 10 V • Low gate charge ( typical 21 nC) • Low Crss ( typical 8 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
101
100
10-1 0.2
150℃ 25℃
※ Notes : 1. V = 0V
GS
2. 250μ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature

中微爱芯LCD显示驱动系应用方案

笔段式LCD驱动> 概述笔段式LCD驱动是指在某一指定的位置显示或不显示固定显示屏，可以用于字符和数字的简单显示，主要用于替代LED数码管。

电路内部基本由电源、内部RC振荡、通讯接口、内部RAM区、逻辑控制几大模块构成。

部分产品还具备蜂鸣器输出、看门狗定时、按键扫描、背光及驱动VA 液晶等特色功能。

根据电路的不同功能主要分为传统型、强驱动型、低功耗型、带按键和背光驱动型以及全静态型五类。

>>应用领域传统型主要应用于小家电产品、智能音响、仪器仪表、电动车仪表盘、电子秤等精密仪器的显示驱动强驱动型主要应用于烤箱、车载等大屏显示驱动低功耗型主要应用于仪器仪表、便携式设备、家用电子装置等带按键和背光驱动型主要应用于油烟机、VA液晶显示屏、仪器仪表等全静态型主要应用于洗衣机显示面板、电子标签等低功耗产品选型指南：传统型显示模式4*32、8*32、8*48三线和四线通讯带蜂鸣器输出功能带看门狗定时器功能芯片衬底接VDD或浮空强驱动型显示模式3*52、4*51、3*40~3*42三线通讯，串行数据通讯支持CCB格式带按键矩阵驱动能力可通过外部电阻调整，可驱动大屏芯片衬底接VDD或浮空低功耗型超低功耗（工作电流程序可控）2线通讯显示闪烁功能（程序可控制）AiP9792推出COG产品带按键和背光驱动型带按键扫描PWM背光LCD工作电压可调AiP31721显示帧频65Hz，200Hz程序可选，可驱动VA液晶全静态型显示模式2*118全静态驱动，工作电流典型300uA4线串行接口具有关机指令，典型静态电流小于0.5uA字符型LCD驱动>概述字符型点阵LCD驱动电路本身具有字符发生器，可以显示字母、数字符号、中文汉字以及自定义图形，显示容量大，功能丰富。

电路内部由显示RAM、字库、字符生成器、显示驱动和控制逻辑组成，可以通过通讯接口与微处理器进行通讯，实现LCD的显示驱动。

另部分产品具有内建两倍压、显示图形等特色功能。

自动喷淋系统国际标准nfpa13中文版

NFPA-13撒水系统安装标准1999年版美国国家防火协会(NFPA)，1 Batterymarch Park, PO Box 9101, Quincy, MA 02269-9101为订定国际准则与标准之机构美国国家防火协会(NFPA)One Batterymarch ParkQuincy, Massachusetts 02269©版权所有有关本文件之重要注意事项美国国家防火协会(NFPA)法规及标准，此处所含文件乃经过美国国家标准协会核准的标准发展过程而达成共识之后制作的。

该过程集结各界义工表达各种观点与旨趣，共同达成消防及其它安全议题的共识。

虽然NFPA管理本过程并制定规则，在形成共识的过程中力求公平，但并非独立测试、评估、或查证法规与标准内所含任何信息的确实性或任何判断的健全与否。

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注意事项与本文件有关之所有问题或其它沟通内容以及查询、NFPA监督其法规与标准制作过程的一切信息，包括因提议临时修订案，以及正常修订周期内提议修订NFPA 文件而要求正式解释，皆应送往NFPA总部，地址：1 Batterymarch Park, P. O. Box 9101, Quincy, MA 02269-9101，美国国家防火协会，标准评议会，秘书收。

FQP12N60C中文资料

©2003 Fairchild Semiconductor Corporation
Rev. B, October 2003
元器件交易网
FQP12N60C/FQPF12N60C
Typical Characteristics
V Top : 15.0GSV
10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 101 Bottom : 4.5 V
(Note 2)
IAR
Avalanche Current
(Note 1)
EAR
Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation (TC = 25°C)
- Derate above 25°C
Figure 5. Capacitance Characteristics
Capacitance [pF]
©2003 Fairchild Semiconductor Corporation
VGS, Gate-Source Voltage [V]
IDR, Reverse Drain Current [A]
2.0 --
4.0
V
VGS = 10 V, ID = 6 A
-- 0.53 0.65
Ω
VDS = 40 V, ID = 6 A
(Note 4) --
13
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss