C-BNthinfilmformationinahybridr.f.-PLDtechnique
FORMATION OF THIN FILM TRANSISTOR
专利名称：FORMATION OF THIN FILM TRANSISTOR 发明人：YANAI KENICHI,OKI KENICHI,OURAMICHIYA申请号：JP6532986申请日：19860324公开号：JPS62221162A公开日：19870929专利内容由知识产权出版社提供摘要：PURPOSE:To improve the interfacial characteristics and to prevent the short-circuit defect generating on the titled transistor by a method wherein, in an insulated gate type thin film transistor provided with a hydrogenated amorphous silicon active layer, a gate insulating film and a semiconductor film having no pin-holes are continuously formed by performing a plasma CVD (chemical vapor deposition) method ora photo- CVD method. CONSTITUTION:A gate electrode 2 is formed on a glass substrate1. Subsequently, a silicon nitride SiN film 3 is formed. In the beginning of the formation of the SiN film 3, the first gate insulating film 3 is deposited using the CVD device of electron beam excitation. The accumulated potential on the film surface due to electron charge is not increased on a pin-hole part 29 due to electron charge even when pin-holes 29 are generated while the gate insulating film is being deposited. As a result, electron streams 24,... coming from an emitter 21 are concentrated at the pin-holes 29, the dissociation speed of raw gas is increased, and a film is grown locally. Then, a silicon nitride film 4, which becomes the second gate insulating film, is formed by performing a CVD method using optical excitation or a CVD method of plasma excitation by high frequency electric field.申请人：FUJITSU LTD更多信息请下载全文后查看。
FORMATION OF THIN FILM
专利名称：FORMATION OF THIN FILM 发明人：KATOU ICHIROU,ITOU TAKASHI 申请号：JP15240883申请日：19830823公开号：JPS6045026A公开日：19850311专利内容由知识产权出版社提供摘要：PURPOSE:To form a thin film of superior quality having no layer containing impurity atoms at an interface by a method wherein gas containing halogen group atoms is added by the specified quantity to reaction gas and supplied. CONSTITUTION:When reaction gas in a plasma condition is to be supplied into a reaction chamber to form a thin film on the surface of a semiconductor substrate arrange in the reaction chamber, gas containing halogen group atoms is added 5-30% by the ratio of flow rates to reaction gas and supplied. Ammonia gas is flowed in a quartz reaction tube, and gas is made to a plasma condition under reduced pressure of 1 Torr or less, for example. CHF3 gas is added by the ratio of flow rates mentioned above as a reaction accelerator at the same time when ammonia gas is flowed into the reaction tube, and the silicon substrate arranted in the reaction tube is nitrified in plasma of mixed gas with ammonia gas. Accordingly, impurity atoms of oxygen, etc. stored at the boundary face between the semiconductor substrate and a reactively formed thin film are removed or reduced. Therefore a process to remove the impurity atoms at the boundary face is made unnecessarily, and the thin film formation method thereof is effective for enhancement of reliability and enhancement of efficiency.申请人：FUJITSU KK更多信息请下载全文后查看。
FORMATION OF THIN FILM
专利名称：FORMATION OF THIN FILM发明人：TOKUSHIGE HIROYUKI,YONEMOTO TAKAHARU,MORI TAIICHI,MYAGAWATSUGIO,SUZUKI TAKUYA申请号：JP12186087申请日：19870519公开号：JPH0465906B2公开日：19921021专利内容由知识产权出版社提供摘要：PURPOSE:To form a thin film having superior adhesion and denseness on a substrate at a low temp. by forming a thin film on the surface of the substrate by chemical vapor growth and by radiating ion beams on the surface of the substrate during the film formation. CONSTITUTION:Microwaves are introduced into the plasma generation chamber 2 of a unit 1 from a waveguide 4 through the quartz window 5 and ions in plasma gas from an introduction pipe 6 are extracted into the film formation chamber 3 by a magnetic field from an excitation coil 10. In the chamber 3, the ions are reacted with a reactive gas introduced from an introduction pipe 11 on a substrate 21 to form a film. An ion source gas is introduced into a hot cathode filament 14 from an introduction pipe 15 and ionized with electrons emitted from the filament 14 and confined between the filament 14 and the anode 16 by a magnet 17. The ionized gas is converted into ion beams by passing through a leading-out grid 18 and the ion beams are radiated on the substrate 21. By simultaneously carrying out the above- mentioned operations, the ion beams are radiated on the substrate 21 and its vicinity simultaneously with the formation of the film on the surface of the substrate 21. Thus, a thin film havingsuperior adhesion and denseness is formed on the substrate 21 at a low temp. and the quality of the film can be locally exchanged with ease.申请人：SURFACE HIGH PERFORMANCE RES更多信息请下载全文后查看。
FORMATION OF THIN FILM
专利名称：FORMATION OF THIN FILM发明人：FUKUDA NOBUHIRO,OGAWA SHINJI 申请号：JP9794685申请日：19850510公开号：JPS61257478A公开日：19861114专利内容由知识产权出版社提供摘要：PURPOSE:To make high-speed and uniform formation of a thin film on a large area substrate possible by providing a stage for measuring the number of raw material seeds, etc., near the main surface of the substrate to be formed with the thin film and a stage for controlling said number. CONSTITUTION:The number of raw material seeds such as disilane near the main surface of the substrate 3 to be formed with the thin film in a glow discharge reaction chamber 1 is measured by using at least coherent anti-Stokes' Raman spectroscopy (CARS). More specifically, colinear laser light 8 is condensed by a lens and is focused 50 near the substrate 3 through a transparent window to generate CARS light 10 of the intensity corresponding to the number of the raw material seeds in the extreme neighborhood of the focus 50 to obtain CARS spectra. The focus 50 is moved and the number of the raw material seeds, etc. are measured in each position. The flow rate of the gaseous raw material and the discharge rate of the reactive gas are controlled or the positions of vacuum discharge holes 6, 6' for a gaseous raw material introducing part 5 are changed so that the number of the raw material seeds is made equal. The stage for measuring the number of the raw material seeds within about 10mm from the surface to be formed with the thin film is more preferably included.申请人：AGENCY OF IND SCIENCE & TECHNOL更多信息请下载全文后查看。
Thin film formation method, thin film formation eq
专利名称：Thin film formation method, thin film formation equipment, method of manufacturing organic electroluminescence device, organic electroluminescence device, and electronic apparatus
发明人：Shinichi Yotsuya 申请号：US11022385 申请日：2004 1223 公开号：US200501534 72A1 公开日：20050714
专利附图：
摘要：A thin film formation method is provided which can carry out various kinds of patterning deposition correctly and with high precision, and a thin film formation equipment. The thin film formation method arranges a mask between a substrate and a material source and forms the material of the material source as a thin film on the substrate. The method further includes: a substrate contacting process to contact the mask and the substrate; a gap measurement process to measure a gap between the
FORMATION OF THIN FILM
专利名称：FORMATION OF THIN FILM发明人：HIUGAJI MASAHIKO,MIURA TADAO 申请号：JP22291084申请日：19841025公开号：JPS61104070A公开日：19860522专利内容由知识产权出版社提供摘要：PURPOSE:To form easily a thin film contg. oxygen with good reproducibility by irradiating an electron beam while exposing a thin film formed on a substrate to a gaseous atmosphere contg. oxygen as the component element at an optional time during the formation of the thin film. CONSTITUTION:In a thin film forming vessel 1 under vacuum or in a low- pressure gaseous atmosphere, a substrate 2 is heated to a specified temp. by a heater 6, the vaporization base material 7 packed in a crucible 5 is heated by a heater 8 to vaporize the materials at a specified vaporization speed, and a thin film is vapor-deposited on said substrate 2 in specified thickness. At an optional time during said vapor deposition, a gas contg. oxygen as the component element is introduced continuously or intermittently through a variable-leak valve 3 to specified pressure. An electron beam is simultaneously irradiated on the substrate 2 by using an electron gun 4. Consequently, a thin film contg. sufficient oxygen can be formed without deteriorating the crystallinity of the thin film.申请人：TOSHIBA CORP更多信息请下载全文后查看。
FORMATION OF THIN FILM
专利名称：FORMATION OF THIN FILM发明人：MATSUSHIMA FUMIAKI,ONO YOSHIHIRO 申请号：JP25782188申请日：19881013公开号：JPH02104697A公开日：19900417专利内容由知识产权出版社提供摘要：PURPOSE:To form a film excellent in adhesion properties by performing a first-time film formation and thereafter heat treating the film and successively cleaning an electrode pattern sufficiently and there-after performing a second or more-times film formation in the case of performing film formation on a plurality of electrode patterns provided on the same base plate by micelle electrolysis at a plurality of times. CONSTITUTION:Organic or inorganic fine pigment powder insoluble or difficult to be dissolved in the aq. soln. described hereunder is incorporated in the aq. soln. contg. both a surfactant having the property charged to positive by electrolytic oxidation and a supporting electrolyte such as Li2SO4 and thereby a plurality of electrolytic aq. solns. are prepared. In the case of forming films on a plurality of electrode patterns provided on a base plate for film formation by micelle electrolysis at a plurality of times while utilizing the above-mentioned electrolytic aq. soln., a first time film is formed into a prescribed pattern and thereafter heat-treated and successively the electrode pattern to be film-formed in a second or more times is sufficiently cleaned and then ensuing film formation is performed in the prescribed patterns. The film excellent in adhesion properties on the base plate is formed by repeating this stage and performing film formation at a plurality of times.申请人：SEIKO EPSON CORP 更多信息请下载全文后查看。
Thin film formation device and semiconductor film
专利名称：Thin film formation device andsemiconductor film production method发明人：津田 睦,滝 正和申请号：JP2010514436申请日：20090514公开号：JPWO2009145068A1公开日：20111006专利内容由知识产权出版社提供专利附图：摘要： In the baseplate stage opposing 12 which keeps baseplate 100 and baseplate 100, in order the vacuum container the high frequency power source to surround plasma electrode 13 outside 40 which impresses high frequency voltage in SiH gas supply expedient and the plasma electrode 13 which turns on in H gas supply expedient andwhen forming a membrane at the time of 10 which possesses the plasma electrode 13 which is provided and membrane it supplies the H gas to vacuum container 10 with fixed flow/turn off the supply of the SiH gas to vacuum container 10 with opening and closing the gas valve 25, and vacuum container 10, the sealed box 20 which is grounded and the SiH gasIn order periodically to supply to vacuum container 10, as opening and closing the gas valve 25 is controlled, same period doing in opening and closing the gas valve, 25 the control section 60 which adds amplitude modulation to the high-frequency power which it impresses in plasma electrode 13 and, it has, gas valve 25 is arranged inside sealed box 20.申请人：三菱電機株式会社地址：東京都千代田区丸の内二丁目７番３号国籍：JP代理人：酒井 宏明更多信息请下载全文后查看。
THIN-FILM INDUCTOR, POWER SUPPLY CHANGEOVER CIRCUI
专利名称：THIN-FILM INDUCTOR, POWER SUPPLY CHANGEOVER CIRCUIT, AND CHIP发明人：YANG, Shijun,YANG, Heqian,ZHU,Yongfa,CHEN, Wei申请号：EP18760688.4申请日：20180302公开号：EP3573081B1公开日：20210623专利内容由知识产权出版社提供摘要：This application provides a thin film inductor. The thin film inductor includes a plurality of layers of magnetic thin films, the plurality of layers of magnetic thin films include at least a first magnetic thin film and a second magnetic thin film that are adjacent, the first magnetic thin film is nested in the second magnetic thin film, and a relative magnetic permeability of the first magnetic thin film is less than a relative magnetic permeability of the second magnetic thin film, and a difference between the relative magnetic permeability of the first magnetic thin film and the relative magnetic permeability of the second magnetic thin film is greater than or equal to a first threshold, where when a magnetic induction intensity of the second magnetic thin film reaches a saturated magnetic induction intensity of the second magnetic thin film, a magnetic induction intensity of the first magnetic thin film is less than or equal to a saturated magnetic induction intensity of the first magnetic thin film. Use of this application can avoid a problem of a sharp decrease in an inductance of the thin film inductor caused when the first magnetic thin film is easily magnetically saturated. Additionally, this application further provides a corresponding power conversion circuit and chip.代理机构：Kreuz, Georg Maria 更多信息请下载全文后查看。
Thin film formation device
专利名称：Thin film formation device 发明人：伊藤 弘基,美濃和 芳文,山地 茂申请号：JP特願昭62-139912申请日：19870605公开号：JP特公平7-35569B2公开日：19950419专利内容由知识产权出版社提供摘要：PURPOSE:To stably supply the vapor and clusters of a material to be deposited by evaporation to a substrate by forming a crucible body to be used for the ICB method into a double construction, of which the outside consists of a conductive high melting point material and the inside consists of a high melting point material having high corrosion resistance. CONSTITUTION:The crucible body 26 in which the material 5 to be deposited by evaporation is packed for formation of a thin film on the substrate by the ICB method is made into the double construction consisting of an inside crucible 24 and an outside crucible 25. A cap 23 formed with a nozzle 4 is provided to the inside crucible 24 housing the material 5 to be deposited by evaporation and is constituted of a high melting point material such as tungsten, alumina, titanium nitride or silicon carbide to suppress the chemical reaction thereof with the material to be deposited by evaporation. The vapor and clusters of the material 5 to be deposited by evaporation are thereby stably supplied to the substrate and the reuse of the crucible body 26 is enabled.申请人：三菱電機株式会社地址：東京都千代田区丸の内2丁目2番3号国籍：JP代理人：曾我 道照 (外3名)更多信息请下载全文后查看。
Thinfilmsofplasm...
Thin films of plasma-synthesized germanium nanocrystalsfor electronic applicationsZ. Holman and U. KortshagenDepartment of Mechanical Engineering, University of Minnesota, Minneapolis, USAAbstract: Thin films of semiconductor nanocrystals have great potential for future electronic devices, but progress with Si and Ge nanocrystal films has been slowed by synthesis chal-lenges. We report on the synthesis of Ge nanocrystals using a nonthermal plasma approach, the formation of thin films of nanocrystals via a solution casting technique and a novel impac-tion technique, and the encouraging optical and electronic characteristics of these films. Keywords: Germanium, nanocrystal, thin film, nonthermal plasma, conductivity, absorption1. IntroductionSemiconductor nanocrystals (NCs) have received con-siderable attention for their potential use in devices like photovoltaics, light-emitting diodes, and photodetectors because of their size-tuneable optical properties [1-3]. Researchers have had particular success with II-VI and IV-VI materials such as CdSe and PbSe and have demon-strated emission and absorption spectra which can be tuned across the visible [4] or infrared [5] regions of the spectrum by altering the NC size. In addition, new physi-cal phenomena such as efficient generation of multiple excitons per absorbed photon have been reported for these materials at the nanoscale [6]. The success of these mate-rials is due in large part to the ease with which a narrow size distribution of uniform, crystalline particles can be synthesized in solution. There is significant interest in duplicating the work of the II-VI and IV-VI NC commu-nities with abundant, non-toxic Group IV materials such as Si and Ge. However, the solution synthesis route used for, e.g., CdSe NCs does not lend itself to Si and Ge be-cause of the high melting temperature of these materials and the difficulty in finding suitable precursors [7]. Nonthermal plasmas, by contrast, provide a unique environment in which to nucleate freestanding, crystalline nanoparticles of Si and Ge [8-10]. In particular, plasmas have three key features that make them suitable for the production of high-quality NCs. First, the disparity be-tween the electron and ion temperatures causes particles to build up a unipolar negative charge, suppressing ag-glomeration. Agglomeration ruins many otherwise prom-ising gas-phase synthesis routes since a narrow distribu-tion of NC sizes is necessary to prevent broadening of the tunable absorption and emission spectra. Second, the fast electrons in nonthermal plasmas also negatively charge the reactor walls, effectively confining the particles to plasma volume and reducing diffusion losses. Finally, exothermic reactions such as electron-ion recombination and atomic hydrogen attachment cause significant fluc-tuations in the temperatures of small particles, allowing them to crystallize [8,9]. We have previously demon-strated the use of a low-pressure flow-through nonthermal plasma reactor for the synthesis of both Si [8] and Ge [11] NCs.Germanium is often overlooked in favor of the more popular Si; however, Ge NCs have distinct advantages over their Si counterparts for particular applications. The bulk Ge bandgap is small—0.7 eV—but both theoretical and experimental reports indicate that it is very sensitive to size reductions [12-14]. Consequently, a wide range of bandgaps are accessible with only a relatively small range of Ge NC sizes. Thus, a multijunction solar cell that capitalizes on the entire solar spectrum could in principle be constructed solely of layers of Ge NCs of varying sizes.An important barrier to developing NC devices is the deposition of thin films. Ideally, thin films of NCs would have the same optical properties as their constituent parti-cles so that a film’s absorption or emission spectra could be tuned. Additionally, films must not be electrically in-sulating. To date, films of II-VI and IV-VI NCs have been deposited by drop- or spin-casting a NC colloidal solution [3]. This is a natural deposition technique for these NCs, as they are synthesized in solution, stabilized by ligands attached to their surfaces. While it is also possible to cast films of plasma-synthesized Ge NCs from solution, this is only one of several deposition techniques that are avail-able when NCs are synthesized in a plasma as a powder that are not available when solution synthesis routes are used.Here, we describe the plasma synthesis of Ge NCs, two techniques to deposit thin films of Ge NCs, and the opti-cal and electrical properties of these films. We are not aware of any other reports of thin films of freestanding Ge NCs.2. Germanium nanocrystal synthesisGermanium NCs are synthesized in a flow-through plasma reactor, described in detail in ref. [11] and shown schematically in Fig. 1. Germanium tetrachloride, hydro-gen, and argon gas enter a 25 mm diameter quartz tube 20cm in length. A ~5 cm long plasma is created by applying 50-150 W of radiofrequency power at 13.56 MHz to a ring electrode pair. Germanium NCs nucleate in the plasma following precursor dissociation, and can be col-lected as a powder downstream of the plasma on a mesh. The typical operating pressure is 2-3 Torr. The total gas flow in the system, which determines the residence time of the Ge NCs in the plasma zone, can be varied from 20-200 sccm.Transmission electron microscopy (TEM) and X-ray diffraction (XRD) indicate that the particles are nearly monodisperse (standard deviations of 10-15% the mean particle diameter) and the mean diameter can be tuned from 4-15 nm by changing the residence time of the Ge NCs in the plasma (Fig. 2). The particles can be made either crystalline or amorphous without otherwise altering their characteristics by controlling the plasma power. Pro-vided sufficient hydrogen gas is introduced into the reac-tor, Fourier transform infrared spectroscopy shows (FTIR) that the Ge NC surfaces are terminated by hydrogen.3. Film deposition from solutionIn the first film deposition scheme, Ge NC powder is reacted with 1-dodecene and dispersed in mesitylene to form an optically transparent colloid [15]. The attache-ment of alkene molecules to the NC surfaces is necessary to stabilize them in solution; bare Ge NCs quickly ag-glomerate and flocculate if put into common solvents because of their van der Waals attractions. The reaction proceeds by the insertion of the unsaturated alkene bond into a Ge-H x group [16], and the steric stabilization af-forded by the molecules inhibits flocculation.Films are then deposited by drop- or spin-casting the Ge NC colloid onto substrates. With a properly chosen solvent (such as mesitylene), the resulting films are uni-form and dense, as can be seen in Fig. 3. Current-voltage measurements were performed on films deposited on glass or Si/SiO 2 substrates prepatterned with metal source/drain electrodes. As-deposited films were found to be electrically insulating. This behavior is attributed to the bulky alkene surface ligands (which were necessary forsolubility) that physically separate neighboring nanocrys-tals in cast films resulting in barriers to charge carrier transport. Nearly all as-deposited NC films cast from col-loidal solutions have been reported to be electrically in-sulating for this reason, regardless of the materials system [17-20]. However, post-treatments such as dipping in Lewis bases have been shown to remove the ligands and enhance conduction in, e.g., PbSe NC films [20].We investigated the effects of vacuum thermal anneal-ing treatments on Ge NC films. Annealing temperatures were kept sufficiently low to avoid sintering of the Ge NCs, as verified from the widths of the Ge XRD peaks. A residual gas analyzer attached to the annealing chamber recorded spectra during annealing. Fragmentation patterns showed that the dodecene molecules on the Ge NC sur-faces decompose and leave the films beginning at 200°C. The removal of these hydrocarbons is correlated with an increase in the electrical conductivity of the films, which increases to greater than 10-6 S/cm in the dark and an or-der of magnitude larger under solar-simulating light afterFig. 1 Schematic of the plasma reactor. From [11].Fig. 2 TEM images of Ge NCs synthesized with residencetimes varying from 20 ms (a) to 440 ms (d). From [11].Fig. 3 SEM, TEM, and high-resolution TEM images of a Ge NC film cast from mesitylene. From [15].annealing at 250°C. In addition, we have observed either p- or n-type behavior in Ge NC thin-film field-effect tran-sistors for annealing temperatures above 300°C, depend-ing on the annealing conditions (Fig. 4). Saturation field effect mobilities determined from this data are as large as 10-4cm2/Vs. These values, while not extraordinary, are very promising since they are approaching those of amorphous Si and popular organic semiconductors.4. Film deposition via gas-phase impactionWhile Ge NC films deposited from solution show en-couraging electrical performance, FTIR data indicate that some hydrocarbon contamination remains in the films, even after high temperature annealing. We believe this limits the performance of these films. Consequently, we have developed an alternative deposition scheme to im-pact bare(hydrogen-terminated) Ge NCs onto substrates in the gas phase. This scheme capitalizes on the uniquefeatures of our flow-through plasma reactor and is not available for NCs synthesized in solution.A slit-shaped orifice is placed downstream of the syn-thesis plasma shown in Fig. 1, and the slit size is chosen so as to choke the flow and maintain the plasma pressure in the desired 2-3 Torr range. The acceleration of the gas through the orifice creates a curtain or spray of Ge NCs roughly 1 cm in width. A film is deposited when Ge NCs impact a substrate rastered under the spray (Fig. 5). Three parameters determine the density of the films: the distance between the orifice and substrate, the total flow rate, and the downstream pressure. For large sub-strate-to-orifice distances, fluffy or powdery films are deposited that have densities of less than a few percent the density of bulk Ge. These films are clearly unsuitable for electronic devices since they are not mechanically robust and the Ge content is below the percolation threshold, making conduction poor [21]. However, the film density rapidly increases as the standoff distance is reduced below ~30 mm. Larger total gas flow rates also significantly increase the film density, although we suspect at present that this effect arises because the flow rate is intimately tied to the NC size, with smaller flows resulting in larger NCs. Finally, the downstream pressure—or more accu-rately, the ratio of the upstream and downstream pres-sures—alters the film density, even as it is lowered far below the pressure required for sonic flow through the orifice. For pressure ratios of 2, films are roughly 5% the density of bulk, but film densities can exceed 50% when the downstream pressure is reduced to create a pressure ratio of 20. The effect of the downstream pressure in par-ticle deposition has been studied in great detail by the hypersonic impaction community [22], although not typi-cally at the relatively small pressure ratios used here. All densities in these studies were determined by measuring actual film thicknesses in cross-sectional scanning elec-tron microscopy (SEM) and using this value to fit Ruth-erford backscattering data. In light of the theoreticalFig. 4 Output characteristic of a n-type Ge NC thin-film fieldeffect transistor showing gate sensitivity.Fig. 5 Cross-sectional SEM image and photograph of Ge NC films.Fig. 6 XRD spectra of Ge NC films containing various sizes of NCs.packing limit of 74% for hard spheres, film densities of greater than 50% are certainly respectable.Current-voltage measurements on impacted dense films reveal that as-deposited films are mildly conductive with conductivities of 10-7S/cm in the dark and an order of magnitude larger under solar-simulating light. This con-trasts with NC films from solution—Ge or other-wise—which are nearly exclusively reported to be insu-lating prior to some sort of activating post-treatment. Im-pacted films, like Ge NC films from solution, show im-provement upon annealing. In this case, there are no hy-drocarbons to be decomposed and removed; however, we suspect the annealing treatment reorganizes surface atoms, thereby passivating trap states. Conductivities of 10-5 S/cm have been observed after annealing at 300°C.As discussed earlier, NC films will ideally adopt the optical properties of their constituent particles so that their absorption and emission can be tuned. We deposited Ge NC films via impaction with various NC sizes to study the tunability of film absorption spectra. Figure 6 displays normalized XRD data from these films, from which the NC sizes were determined. Isolated Ge NCs have been reported by others to exhibit quantum confinement effects for NC sizes below ~10 nm. Absorption coeffi-cients—determined from absorption measurements, thickness measurements, and refractive index calculations from interference fringes—show that Ge NC films also exhibit quantum confinement with the absorption spectra blue-shifting with decreasing NC size. Film bandgaps have been determined from the intercept of the square root of the absorption coefficient with the x-axis, reveal-ing that the bandgap of Ge NC films can be smoothly tuned from 0.7 eV for >10 nm NCs to greater than 1 eV for 5 nm Ge NCs. This result is important for device ap-plications such as photovoltaics, since it means that ab-sorption spectra can be decoupled from other materials properties. That is, a researcher interested in Ge films is no longer tied to the bulk Ge bandgap of 0.7 eV.5. ConclusionsGermanium NCs have been synthesized using a unique nonthermal plasma approach which offers flexibility not afforded by other synthesis techniques. Spherical, free-standing, crystalline Ge NCs have been deposited as thin films using both a solution casting technique and a gas-phase impaction technique. Both types of films ex-hibit encouraging electrical behavior, and impacted films have been shown to have tunable absorption spectra as a result of bandgap enlargement. These findings make Ge NC thin films promising candidates for the next genera-tion of electronic devices.AcknowledgementsThis work was supported by NSF under grant CBET-0756326 and IGERT grant DGE-0114372. References[1] I. Gur, N.A. Fromer, M.L. Geier, and A.P. Alivisatos,Science310, 462 (2005).[2] D.C. Oertel, M.G. Bawendi, A.C. Arango, and V. Bu-lovic, Appl. Phys. Lett.87, 213505 (2005).[3] C.B. Murray, C.R. Kagan, and M.G. Bawendi, Annu.Rev. Mater. Sci.30, 545 (2000).[4] C.B. Murray, D.J. Norris, and M.G. Bawendi, J. Am.Chem. Soc.115, 8706 (1993).[5] H. Du, C. Chen, R. Krishnan, T.D. Krauss, J.M. Har-bold, F.W. Wise, M.G. Thomas, and J. Silcox, NanoLett.2, 1321 (2002).[6] R.D. Schaller and V.I. Klimov, Phys. Rev. Lett.92, 186601 (2004).[7] D. Gerion, N. Zaitseva, C. Saw, M.F. Casula, S. Fakra,T. Van Buuren, and G. Galli, Nano Lett.4, 597 (2004).[8] L. Mangolini, E. Thimsen, and U. Kortshagen, NanoLett.5, 655 (2005).[9] L. Mangolini and U. Kortshagen, Phys. Rev. E79,026405 (2009).[10] U. Kortshagen, J. Phys. D (in press).[11] R. Gresback, Z. Holman, and U. Kortshagen, Appl.Phys. Lett.91, 093119 (2007).[12] T. Takagahara and K. Takeda, Phys. Rev. B46,15578(1992).[13] G. Nesher, L. Kronik, and J. R. Chelikowsky, Phys.Rev. B71, 035344 (2005).[14]J. P. Wilcoxon, P. P. Provencio, and G. A. Samara,Phys. Rev. B64, 035417 (2001).[15] Z. Holman and U. Kortshagen, Langmuir(submit-ted).[16] K. Choi and J.M. Buriak, Langmuir16, 7737 (2000).[17] M. Law, J.M. Luther, Q. Song, B.K. Hughes, C.L.Perkins, and A.J. Nozik, J. Am. Chem. Soc.130, 5974 (2008).[18] H.E. Romero and M. Drndic, Phys. Rev. Lett.95,156801 (2005).[19] M. Drndic, M.V. Jarosz, N.Y. Morgan, M.A. Kastner,and M.G. Bawendi, J. Appl. Phys. 92, 7498 (2002). [20] D.V. Talapin and C.B. Murray, Science310, 86(2005).[21] I. Balberg, E. Savir, J. Jedrzejewski, A.G. nassiopou-lou, and S. Gardelis, Phys. Rev. B75, 235329 (2007).[22] J. Fernandez de la Mora, S.V. Hering, N. Rao, andP.H. McMurry, J. Aerosol Sci.21, 169 (1990).。
FORMATION OF THIN FILM
专利名称：FORMATION OF THIN FILM发明人：KATO YOSHIFUMI,加藤 祥文,FUJITAYOSHIFUMI,藤田 祥文,HOZUMI ATSUSHI,穂積篤申请号：JP特願平6-76179申请日：19940414公开号：JP特開平7-278328A公开日：19951024专利内容由知识产权出版社提供专利附图：摘要：PURPOSE:To readily form an abrasion-resistant thin film exhibiting excellent abrasion resistance and excellent adhesion without fail on a resin base plate.CONSTITUTION:An abrasion-resistant coating material mixture containing an acrylicabrasion-resistant ultraviolet curing coating material and a polysiloxane- based abrasion-resistant thermosetting coating material is prepared and an uncured material layer 2 composed of the abrasion-resistant coating material mixture is formed on a resin base material 1. The solvent contained in the uncured material layer 2 is removed and ultraviolet rays are subsequently applied thereto to polymerize the acrylic abrasion-resistant ultraviolet curing coating material in the uncured material layer 2. Heat is then applied thereto to polymerize the polysiloxane-based abrasion-resistant thermosetting coating material in the uncured material layer 2.申请人：TOYOTA AUTOM LOOM WORKS LTD,株式会社豊田自動織機製作所地址：愛知県刈谷市豊田町2丁目1番地国籍：JP代理人：大川 宏更多信息请下载全文后查看。
FORMATION OF THIN FILM
专利名称：FORMATION OF THIN FILM发明人：FUKUDA NOBUHIRO,OGAWA SHINJI 申请号：JP9794685申请日：19850510公开号：JPS6254870B2公开日：19871117专利内容由知识产权出版社提供摘要：PURPOSE:To make high-speed and uniform formation of a thin film on a large area substrate possible by providing a stage for measuring the number of raw material seeds, etc., near the main surface of the substrate to be formed with the thin film and a stage for controlling said number. CONSTITUTION:The number of raw material seeds such as disilane near the main surface of the substrate 3 to be formed with the thin film in a glow discharge reaction chamber 1 is measured by using at least coherent anti-Stokes' Raman spectroscopy (CARS). More specifically, colinear laser light 8 is condensed by a lens and is focused 50 near the substrate 3 through a transparent window to generate CARS light 10 of the intensity corresponding to the number of the raw material seeds in the extreme neighborhood of the focus 50 to obtain CARS spectra. The focus 50 is moved and the number of the raw material seeds, etc. are measured in each position. The flow rate of the gaseous raw material and the discharge rate of the reactive gas are controlled or the positions of vacuum discharge holes 6, 6' for a gaseous raw material introducing part 5 are changed so that the number of the raw material seeds is made equal. The stage for measuring the number of the raw material seeds within about 10mm from the surface to be formed with the thin film is more preferably included.申请人：KOGYO GIJUTSUIN更多信息请下载全文后查看。
FORMATION OF THIN FILM USING ION CYCLOTRON RESONAN
专利名称：FORMATION OF THIN FILM USING ION CYCLOTRON RESONANCE AND DEVICETHEREFOR发明人：HIRABAYASHI KEIJI,TANIGUCHIYASUSHI,ITO SUSUMU,KURIHARANORIKO,IKOMA KEIKO申请号：JP12846088申请日：19880527公开号：JPH01298174A公开日：19891201专利内容由知识产权出版社提供摘要：PURPOSE:To selectively activate a desired ion and to effectively form a thin film by forming plural ions in a plasma producing chamber, and causing ion cyclotron resonance respectively to the ions by a magnetic field having plural intensity distributions. CONSTITUTION:A gas for forming ions for the formation of a film on a substrate 7a, etc., is introduced from a gas inlet 5 into the plasma producing chamber 1 wherein the substrate 7a and 7b are arranged. The ion cyclotron resonance of the ions of the gas is caused by the microwave introduced through a waveguide 3 and an inlet 6, at least one of the high-frequency waves of the high-frequency electrode 4, and a magnetic field by a magnet 2. In the formation of a thin film using ion cyclotron resonance, >=2 kinds of ions are used as the ions, and a magnetic field intensity distribution contg. plural magnetic field intensities necessary for the ion cyclotron resonance of the respective ions is imparted to the magnetic field. By this method, a thin film having a desired quality can be easily formed.申请人：CANON INC更多信息请下载全文后查看。
FORMATION OF THIN FILM
专利名称：FORMATION OF THIN FILM发明人：TOKUSHIGE HIROYUKI,YONEMOTO TAKAHARU,MORI TAIICHI,MIYAGAWATSUGIO,SUZUKI TAKUYA申请号：JP12186087申请日：19870519公开号：JPS63286579A公开日：19881124专利内容由知识产权出版社提供摘要：PURPOSE:To form a thin film having superior adhesion and denseness on a substrate at a low temp. by forming a thin film on the surface of the substrate by chemical vapor growth and by radiating ion beams on the surface of the substrate during the film formation. CONSTITUTION:Microwaves are introduced into the plasma generation chamber 2 of a unit 1 from a waveguide 4 through the quartz window 5 and ions in plasma gas from an introduction pipe 6 are extracted into the film formation chamber 3 by a magnetic field from an excitation coil 10. In the chamber 3, the ions are reacted with a reactive gas introduced from an introduction pipe 11 on a substrate 21 to form a film. An ion source gas is introduced into a hot cathode filament 14 from an introduction pipe 15 and ionized with electrons emitted from the filament 14 and confined between the filament 14 and the anode 16 by a magnet 17. The ionized gas is converted into ion beams by passing through a leading-out grid 18 and the ion beams are radiated on the substrate 21. By simultaneously carrying out the above- mentioned operations, the ion beams are radiated on the substrate 21 and its vicinity simultaneously with the formation of the film on the surface of the substrate 21. Thus, a thin film havingsuperior adhesion and denseness is formed on the substrate 21 at a low temp. and the quality of the film can be locally exchanged with ease.申请人：RAIMUZU:KK更多信息请下载全文后查看。
FORMATION OF THIN FILM
专利名称：FORMATION OF THIN FILM发明人：ICHIKAWA TAKESHI,MIZUTANI HIDEMASA 申请号：JP32544289申请日：19891215公开号：JPH03187996A公开日：19910815专利内容由知识产权出版社提供摘要：PURPOSE:To obtain a high-quality single crystal thin film good in step coverage characteristics with few lamination defects by specifying the respective partial pressures of H2O, CO and CO2, substrate temperature and the energy of the ions to be irradiated on the substrate, respectively, in film formation by the sputtering technique. CONSTITUTION:For example, when a plasma is to be generated at an Ar gas pressure of 10mTorr using a two-frequency excitation-type bias sputtering equipment, the respective partial pressures of H2O, CO and CO2 in a vacuum chamber 11 are made at <=1X10<-8>Torr. And the temperature of a substrate 16 is kept at 400-700 deg.C, and furthermore, for the energy of the ions in the plasma irradiated on the substrate 16, the surface potential of the substrate is externally controlled so that the number of the constitutional atoms for the substrate and that for a thin film put to epitaxial growth on the substrate be brought, respectively, to the threshold values for the sputtering.申请人：CANON INC更多信息请下载全文后查看。
FORMATION OF THIN FILM
专利名称：FORMATION OF THIN FILM 发明人：YAMAZAKI SHUNPEI申请号：JP157888申请日：19880106公开号：JPH01179466A公开日：19890717专利内容由知识产权出版社提供摘要：PURPOSE:To prevent impurities such as sodium from oozing out of a substrate by a method wherein a liquid material is applied to and allowed to harden on the upper surface and side walls of a patterned conductive film and inside open grooves formed therein. CONSTITUTION:A blocking layer 2 is formed between a substrate and a thin film to be worked on and, thereon, a metal conductive film 4 is laminated. The conductive film 4 as well as the blocking layer 2 are subjected to irradiation for the formation of open grooves 6-1-6-n. In this process, for the prevention of impurities from oozing out of the substrate-constituting material, a second blocking layer 8 is formed on the entirety. In such a design, the second blocking layer 8 is relatively thick in the open grooves 6-1-6-n, as compared with its sections positioned on the thin, flat film. In this way, the blocking layer 8 may be thick enough to prevent alkaline ions from oozing out of the substrate.申请人：SEMICONDUCTOR ENERGY LAB CO LTD更多信息请下载全文后查看。