RTQ035P02TR中文资料

Transistor Rev.A 1/4
2.5V Drive Pch MOS FET
RTQ035P02
z Structure
Silicon P-channel MOSFET
z Features
1) Low On-resistance.(80m Ω at 2.5V) 2) High Power Package. 3) High speed switching. 4) Low voltage drive.(2.5V)
z Applications DC-DC converter z External dimensions (Unit : mm)
z Packaging specifications
Taping RTQ035P02
Type
TR 3000
Package
Basic ordering unit (pieces)
Code
z Equivalent circuit
z Absolute maximum ratings (T a=25°C)
Parameter
V V A A W °C A A °C
V DSS V GSS
I S P D Tch I D I SP I DP Tstg
Symbol −20±12−1−41.25150−55 to +150
Limits Unit ∗1 Pw ≤10µs, Duty cycle ≤1%∗2 Mounted on a ceramic board
Drain −source voltage Gate −source voltage Drain current Source current (Body diode)
Total power dissipation Channel temperature
Range of Storage temperature
Continuous Pulsed Continuous Pulsed
∗1
∗1∗2±3.5±17.5
z Thermal resistance
°C / W
Rth (ch-a)100Parameter
Symbol Limits Unit Channel to ambient
∗ Mounted on a ceramic board.
∗
Transistor Rev.A 2/4
z Electrical characteristics (T a=25°C)
z Body diode characteristics (Source-drain) (T a=25°C)
Forward voltage
V SD
−
V
−1.2
−
I S =−1A, V GS =0V
Parameter
Symbol Min.Typ.Max.Unit Conditions
Transistor Rev.A 3/4
z Electrical characteristic curves
Fig.1 Typical Transfer Characteristics
Gate −Source Voltage : −V GS [V ]D r a i n C u r r e n t : −I D (A )
Fig.2 Static Drain −Source On −State Resistance
10100
1000
Drain Current : −I D [A ]S t a t i c D r a i n −S o u r c e O n −S t a t e R e s i s t a n c e R D S (o n )[m Ω]
vs.Drain Current
Fig.3 Static Drain −Source On −State
Resistance 10100
1000
Drain Current : −I D [A ]
S t a t i c D r a i n −S o u r c e O n −S t a t e R e s i s t a n c e R D S (o n )[m Ω]
vs.Drain Current
Fig.4 Static Drain −Source On −State
Resistance Drain Current : -I D [A]
S t a t i c D r a i n −S o u r c e O n −S t a t e R e s i s t a n c e R D S (o n )[m Ω]
vs.Drain −Current
Fig.5 Static Drain −Source On −State Resistance
10100
1000
Drain Current : −I D [A ]
S t a t i c D r a i n −S o u r c e O n −S t a t e R e s i s t a n c e R D S (o n )[m Ω]
vs.Drain −Current
Source −Drain Voltage : −V SD [V ]
Fig.6 Reverse Drain Current vs.
R e v e r s e D r a i n C u r r e n t : −I D R [A ]
Source-Drain Voltage
Drain −Source Voltage : −V DS [V ]
Fig.7 Typical Capactitance 10100
10000
1000vs.Drain −Source Voltage
C a p a c i t a n c e : C [p F ]
Drain Current : −I D [A ]
Fig.8 Switching Characteristics
S w i t c h i n g T
i m e : t [n s ]
Fig.9 Dynamic Input Characteristics
10486
Total Gate Charge : Qg [nC ]
G a t e -S o u r c e V o l t a g e : -V G S [V ]
2
14
8
1
235672
Transistor Rev.A 4/4
z Ｍeasurement circuits
Fig.10 Switching Time Measurement Circuit
DS
Fig.11 Switching Waveforms
Fig.12 Gate Charge Measurement Circuit
I
Fig.13 Gate Charge Waveforms
V GS
V G
Appendix
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export T rade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1。