Ultrafast Optical Switches and Wavelength Division Multiplexing
超表面透镜的宽带消色差成像(特邀)
第50卷第1期 Vol.50No.l红外与激光工程Infrared and Laser Engineering2021年1月Jan. 2021超表面透镜的宽带消色差成像(特邀)莫昊燃1’2,纪子韬\郑义栋\梁文耀\虞华康\李志远1(1.华南理工大学物理与光电学院,广东广州510641;2.广东晶启激光科技有限公司,广东东莞523808)摘要:超透镜是一种由二维亚波长阵列结构表面所设计的透镜,其对光场中振幅、相位和偏振的调控能力较灵活,同时具有低损耗、易集成、超轻薄等优点,近些年引起了科研人员广泛的研究兴趣。
然而在大多数情况下,针对特定波长设计的超透镜会遭受较大的色差,从而限制了其在多波长或宽带应 用中的成像作用。
超透镜因其二维平面结构引入了新的自由度,在对色差的消除上体现了新的潜力。
文中报道了多种不同的消色差超透镜设计及其消色差调控机理,并对现有的消色差超透镜从调制波段 类型进行了分类,如对离散波长的和对连续波长的消色差超表面透镜,后者又可从工作模式上分类为透射型和反射型,最后介绍了超透镜阵列在成像上的应用以及其在大景深宽带消色差器件上的前景。
关键词:超表面;超透镜;消色差聚焦透镜中图分类号:0436 文献标志码:A DOI:10.3788/IRLA20211005Broadband achromatic imaging with metalens {Invited)Mo Haoran1’2,Ji Zitao1,Zheng Yidong1,Liang Wenyao1,Yu Huakang1,Li Zhiyuan1(1. School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510641, China;2. Guangdong Full-spectra Laser Technology Co., Ltd, Dongguan 523808, China)Abstract:Metalens,the specific type of lens designed with the surfaces mading of two dimensional array at the subwavelength scale,has shown great flexibilities to control the light field,including the arbitrary modulation abilities of amplitude,phase and polarization at the subwavelength scale.Moreover,the metalens possesses the unique advantages of low loss,integratable and conformable design and ultrathin,therefore attracts immense attentions in recent years.However,in most cases,the metalens designed for a specific wavelength may penetrate through the large chromatic aberration,which limits their usefulness in multi-wavelength or broadband applications.On the other hand,the metalens has renewed new degrees of freedom due to its two-dimensional planar structure,which has the potential in the elimination of chromatic aberration.Some different typical achromatic metalens designs and their achromatic modulation mechanism were reviewed,the existing achromatic metalens were classified from the types of modulated light bands,such as the achromatic matelens for discrete and continuous wavelength respectively,and the latter can be classified as transmissive and reflective from the working mode.Finally,the application of metalenses array in imaging and their prospect of broadband achromatic devices of large depth of field were introduced.Key words:metasurfaces;metalens;achromatic focusing lens收稿日期:2020-11 -14;修订日期:2020-12-29基金项目:国家重点研发计划(2018YFA0306200);国家自然科学基金(11974119, 12074127, 11504114);广州市科技计划项目(201904010105);中央高校基本科研业务费专项资金(2019ZZ50);华南理工大学教研教改项目(x2wl-Yl 190281)20211005-1第1期红外与激光工程第50卷0引言透镜是光学应用的基本元件,在数码相机、激 光、光学传感、安防、车载等各个领域都有着广泛的 应用。
磁学 径向克尔 英文 kerr effect
IntroductionThe Kerr effect, also known as the magneto-optic Kerr effect (MOKE), is a phenomenon that manifests the interaction between light and magnetic fields in a material. It is named after its discoverer, John Kerr, who observed this effect in 1877. The radial Kerr effect, specifically, refers to the variation in polarization state of light upon reflection from a magnetized surface, where the change occurs radially with respect to the magnetization direction. This unique aspect of the Kerr effect has significant implications in various scientific disciplines, including condensed matter physics, materials science, and optoelectronics. This paper presents a comprehensive, multifaceted analysis of the radial Kerr effect, delving into its underlying principles, experimental techniques, applications, and ongoing research directions.I. Theoretical Foundations of the Radial Kerr EffectA. Basic PrinciplesThe radial Kerr effect arises due to the anisotropic nature of the refractive index of a ferromagnetic or ferrimagnetic material when subjected to an external magnetic field. When linearly polarized light impinges on such a magnetized surface, the reflected beam experiences a change in its polarization state, which is characterized by a rotation of the plane of polarization and/or a change in ellipticity. This alteration is radially dependent on the orientation of the magnetization vector relative to the incident light's plane of incidence. The radial Kerr effect is fundamentally governed by the Faraday-Kerr law, which describes the relationship between the change in polarization angle (ΔθK) and the applied magnetic field (H):ΔθK = nHKVwhere n is the sample's refractive index, H is the magnetic field strength, K is the Kerr constant, and V is the Verdet constant, which depends on the wavelength of the incident light and the magnetic properties of the material.B. Microscopic MechanismsAt the microscopic level, the radial Kerr effect can be attributed to twoprimary mechanisms: the spin-orbit interaction and the exchange interaction. The spin-orbit interaction arises from the coupling between the electron's spin and its orbital motion in the presence of an electric field gradient, leading to a magnetic-field-dependent modification of the electron density distribution and, consequently, the refractive index. The exchange interaction, on the other hand, influences the Kerr effect through its role in determining the magnetic structure and the alignment of magnetic moments within the material.C. Material DependenceThe magnitude and sign of the radial Kerr effect are highly dependent on the magnetic and optical properties of the material under investigation. Ferromagnetic and ferrimagnetic materials generally exhibit larger Kerr rotations due to their strong net magnetization. Additionally, the effect is sensitive to factors such as crystal structure, chemical composition, and doping levels, making it a valuable tool for studying the magnetic and electronic structure of complex materials.II. Experimental Techniques for Measuring the Radial Kerr EffectA. MOKE SetupA typical MOKE setup consists of a light source, polarizers, a magnetized sample, and a detector. In the case of radial Kerr measurements, the sample is usually magnetized along a radial direction, and the incident light is either p-polarized (electric field parallel to the plane of incidence) or s-polarized (electric field perpendicular to the plane of incidence). By monitoring the change in the polarization state of the reflected light as a function of the applied magnetic field, the radial Kerr effect can be quantified.B. Advanced MOKE TechniquesSeveral advanced MOKE techniques have been developed to enhance the sensitivity and specificity of radial Kerr effect measurements. These include polar MOKE, longitudinal MOKE, and polarizing neutron reflectometry, each tailored to probe different aspects of the magnetic structure and dynamics. Moreover, time-resolved MOKE setups enable the study of ultrafast magneticphenomena, such as spin dynamics and all-optical switching, by employing pulsed laser sources and high-speed detection systems.III. Applications of the Radial Kerr EffectA. Magnetic Domain Imaging and CharacterizationThe radial Kerr effect plays a crucial role in visualizing and analyzing magnetic domains in ferromagnetic and ferrimagnetic materials. By raster-scanning a focused laser beam over the sample surface while monitoring the Kerr signal, high-resolution maps of domain patterns, domain wall structures, and magnetic domain evolution can be obtained. This information is vital for understanding the fundamental mechanisms governing magnetic behavior and optimizing the performance of magnetic devices.B. Magnetometry and SensingDue to its sensitivity to both the magnitude and direction of the magnetic field, the radial Kerr effect finds applications in magnetometry and sensing technologies. MOKE-based sensors offer high spatial resolution, non-destructive testing capabilities, and compatibility with various sample geometries, making them suitable for applications ranging from magnetic storage media characterization to biomedical imaging.C. Spintronics and MagnonicsThe radial Kerr effect is instrumental in investigating spintronic and magnonic phenomena, where the manipulation and control of spin degrees of freedom in solids are exploited for novel device concepts. For instance, it can be used to study spin-wave propagation, spin-transfer torque effects, and all-optical magnetic switching, which are key elements in the development of spintronic memory, logic devices, and magnonic circuits.IV. Current Research Directions and Future PerspectivesA. Advanced Materials and NanostructuresOngoing research in the field focuses on exploring the radial Kerr effect in novel magnetic materials, such as multiferroics, topological magnets, and magnetic thin films and nanostructures. These studies aim to uncover newmagnetooptical phenomena, understand the interplay between magnetic, electric, and structural order parameters, and develop materials with tailored Kerr responses for next-generation optoelectronic and spintronic applications.B. Ultrafast Magnetism and Spin DynamicsThe advent of femtosecond laser technology has enabled researchers to investigate the radial Kerr effect on ultrafast timescales, revealing fascinating insights into the fundamental processes governing magnetic relaxation, spin precession, and all-optical manipulation of magnetic order. Future work in this area promises to deepen our understanding of ultrafast magnetism and pave the way for the development of ultrafast magnetic switches and memories.C. Quantum Information ProcessingRecent studies have demonstrated the potential of the radial Kerr effect in quantum information processing applications. For example, the manipulation of single spins in solid-state systems using the radial Kerr effect could lead to the realization of scalable, robust quantum bits (qubits) and quantum communication protocols. Further exploration in this direction may open up new avenues for quantum computing and cryptography.ConclusionThe radial Kerr effect, a manifestation of the intricate interplay between light and magnetism, offers a powerful and versatile platform for probing the magnetic properties and dynamics of materials. Its profound impact on various scientific disciplines, coupled with ongoing advancements in experimental techniques and materials engineering, underscores the continued importance of this phenomenon in shaping our understanding of magnetism and driving technological innovations in optoelectronics, spintronics, and quantum information processing. As research in these fields progresses, the radial Kerr effect will undoubtedly continue to serve as a cornerstone for unraveling the mysteries of magnetic materials and harnessing their potential for transformative technologies.。
太赫兹宽带高功率源新突破
太赫兹宽带高功率源新突破希腊IESL(Institute of Electronic Structure and Laser ) Anastasios D. Koulouklidis 和维也纳技术大学(TU Wien )光子学研究所Claudia Gollner 等在2020年1月在NATURE COMMUNICATIONS 上发表文章《Observation of extremely efficient terahertz generation from mid-infrared two-color laser filaments 》,宣布其在太赫兹超宽带高功率源上获得的重要突破。
系统结构如下:¼波片 硒化镓晶体 7mm 直径 中红外1:波长w 中红外2:波长2w 150mm 焦距离轴抛物面镜 聚焦两束激光两束飞秒中红外激光产生等离子体150mm 焦距离轴抛物面镜 聚焦太赫兹极化栅低通滤波5mmHDPE100mm 焦距离轴抛物面镜聚焦太赫兹功率测试光谱测试迈克尔逊 干涉测试中红外飞秒激光器主要突破:1.太赫兹转换效率(输入中红外激光能量/太赫兹能量)达到2.36%,有望提升到4.7%2.太赫兹光谱宽度达到15THz(峰值在7.5THz)及功率分布情况(100 and 150 MV cm−1 蓝色:电光采样/红色:迈克尔逊干涉测量)3.入射中红外激光(椭圆极化)和太赫兹波束(线极化)的极化模式2020年1月微风在美克锐公众号发表的《太赫兹的功率上限在哪里?》文章对电子学和光子学的太赫兹能量转换效率做过估计,在咨询多位业界专家后专门归纳出以下表格供大家参考。
从上表可见,IESL采用中红外激光实现近5%的能量转换效率已属太赫兹源中翘楚。
近年中红外激光器的迅猛发展,使得超宽带小型化的太赫兹源成为可能。
困扰太赫兹业界多年的功率问题是否能够峰回路转、柳暗花明,短期可能并不乐观,还有待材料物理学的突破。
超高频shf波长范围 -回复
超高频shf波长范围-回复什么是超高频(SHF)波长范围?超高频(Super High Frequency,简称SHF)是无线电通信中的一个频率范围,波长在10厘米至1厘米之间。
根据国际电信联盟(ITU)的定义,该频率范围被分为多个子频段,即C波段、X波段、Ku波段和Ka波段。
这一频率范围具有许多特殊的通信特性和应用,因此在诸多领域都得到了广泛的应用。
C波段:C波段的频率范围为4 GHz至8 GHz,波长范围为3.75厘米至7.5厘米。
在C波段中,由于波长较长,信号的传输距离较远,所以常常用于卫星通信、雷达、导航、军事通信等应用。
在军事应用中,C波段的通信系统可用于军舰、飞机和无人机等方面的远程通信。
X波段:X波段的频率范围为8 GHz至12 GHz,波长范围为2.5厘米至3.75厘米。
X波段的特点是具有高频率、高分辨率的特点。
因此,它常用于天线相控阵雷达、气象雷达、空中监视等系统。
此外,卫星通信和卫星广播系统也广泛使用X波段进行信号传输。
Ku波段:Ku波段的频率范围为12 GHz至18 GHz,波长范围为1.67厘米至2.5厘米。
Ku波段具有较高的传输速率,因此被广泛应用于卫星通信和直播电视传输。
此外,在一些应用中,如气象雷达和遥感技术中,Ku波段也被广泛采用。
Ka波段:Ka波段的频率范围为26 GHz至40 GHz,波长范围为0.75厘米至1.15厘米。
Ka波段的特点是传输速率更高,但传输距离较短。
因此,它在卫星通信、卫星广播和雷达系统中得到广泛应用。
它也常用于航空和导航雷达系统。
超高频波长范围的应用:超高频波长范围的广泛应用涵盖了众多领域,包括通信、雷达、导航和卫星技术等。
其中,卫星通信是超高频波长范围最重要的应用之一。
卫星通信通过卫星中继站将信号传输至地面站或其他卫星上,实现长距离、高速率的数据传输。
在军事应用中,超高频波长范围的卫星通信被广泛应用于军事通信和情报收集。
该技术不仅提供了高速率和可靠性,还具备抗干扰和隐蔽性等优势。
光波导波长传感器和古斯-汉欣效应的研究的开题报告
光波导波长传感器和古斯-汉欣效应的研究的开题报告1. 研究背景光纤传感器作为一种新型传感器,其应用广泛。
光波导(WG)是光纤传感器的重要组成部分,可以对不同的物理、化学及生物参数进行测量。
光波导的根本原理是光的引导,通过波导中的光传输来实现信号传输。
在光波导中,古斯-汉欣效应是一种重要的物理现象,创造了很多光学传感器。
本研究旨在探究光波导波长传感器与古斯-汉欣效应的相关性。
2. 研究目的本研究的目的是研究光波导波长传感器与古斯-汉欣效应的关系和特性,探究使用光波导波长传感器对物理、化学及生物参数进行测量的可行性。
并且尝试利用实验验证研究结果,以提高光波导波长传感器的精度和灵敏度。
3. 研究内容本研究的主要内容包括以下几个方面:(1) 光波导波长传感器基本原理及性能分析(2) 古斯-汉欣效应的基本原理及其应用(3) 光波导波长传感器测量物理、化学及生物参数的原理与方法(4) 实验设计,采用自制的光波导波长传感器对不同参数进行测量。
(5) 分析实验结果,研究光波导波长传感器特性和灵敏度。
4. 研究意义本研究的主要意义在于通过对光波导波长传感器与古斯-汉欣效应的相关性研究,探究其在物理、化学及生物参数测量领域的应用,为光纤传感器的应用提供新的思路和方法。
此外,研究的理论基础和实验结果有助于提高光波导波长传感器的性能和精度,进一步推动光波导技术的发展和完善。
5. 研究方法本研究采用文献调研、理论分析和实验研究相结合的方法。
首先,通过查阅文献和分析已有的研究成果,对光波导波长传感器和古斯-汉欣效应进行综述和总结。
然后,基于已有的理论研究成果,设计实验方案,制作光波导波长传感器,以测量不同的物理、化学及生物参数。
最后,根据实验结果,分析光波导波长传感器的特性和灵敏度,并探究其在实际应用中的可行性。
6. 研究进度安排(1) 第一阶段(前期调研),时间:1个月初步了解光波导波长传感器和古斯-汉欣效应的相关理论和应用,查阅相关文献,撰写结合文献调研的相关报告和综述。
In含量对Ge_In_Se薄膜光学特性的影响_陈芬_王永辉_聂秋华_王国祥_陈昱
硅酸盐学报・ 388 ・2013年DOI:10.7521/j.issn.0454–5648.2013.03.19 In含量对Ge–In–Se薄膜光学特性的影响陈芬,王永辉,聂秋华,王国祥,陈昱,沈祥,戴世勋(宁波大学信息科学与工程学院,浙江宁波 315211)摘要:采用磁控溅射法制备了Ge–In–Se硫系薄膜,利用X射线衍射、可见–近红外吸收光谱和Raman光谱分析等技术对Ge–In–Se硫系薄膜的相态、结构和光学特性进行了研究和分析。
结果表明:该Ge–In–Se薄膜具有良好的非晶特性。
Raman光谱分析表明:[GeSe4]四面体Ge—Se键的高频振动模式是该薄膜的主要振动模式之一,且Ge—Se键的振动强度随着In含量的增加而减小;当In的含量达到13.87% (摩尔分数)时,[GeSe4]四面体消失,而[InSe4]四面体的对称伸缩振动模式成为了主要振动模式。
采用Swanepoel方法和经典Tauc方程计算发现:随着In含量增加,该薄膜的短波吸收限红移,折射率逐渐增大,光学带隙逐渐减小。
关键词:锗–铟–硒薄膜;光学带隙;Raman分析中图分类号:TQ171.73+4 文献标志码:A 文章编号:0454–5648(2013)03–0388–04网络出版时间:网络出版地址:Effect of In Content on Optical Properties of Ge–In–Se Thin FilmsCHEN Fen,WANG Yonghui,NIE Qiuhua,WANG Guoxiang,CHEN Yu,SHEN Xiang,DAI Shixun(College of Information Science and Engineering, Ningbo University, Ningbo 315211, Zhejiang, China )Abstract: Amorphous Ge–In–Se thin films were prepared by a magnetron co-sputtering technique. The morphology, structure and optical properties of the thin films were analyzed by X-ray diffraction, visible/near-infrared transmission spectroscopy and Raman spectroscopy, respectively. The results show that the Ge–In–Se thin films have the amorphous characteristics. It was indicated that the high frequency vibration mode of Ge–Se bond in [GeSe4] tetrahedral was the main one in the Ge–In–Se thin films, and the vibration intensity decreased with increasing In content. When In content was 13.87% in mole, the [GeSe4] tetrahedral disappears and [InSe4] tetrahedral became the dominate structure. According to the analysis by the Swanepoel method and the classic Tauc equation, it was found that the red shift appeared at a short-wavelength absorption edge, the refractive index increased and the optical band gap de-creased with the increase of In content.Key words: germanium–indium–selenium thin films; optical band gap; Raman analysis1 Introductiontical switches, optical imaging, integrated optics, tele-communication and data storage, etc.,[1–4] amorphous chalcogenide glasses and thin films have been attracted much attentions. Especially, chalcogenide thin films have been used as an alternative platform for the ultrafast op-tical signal processing photonic chips. This material ex-hibits a wide infrared transmission, a high refractive in-dex, higher nonlinearity and appropriate optical band gap, which are the most significant optical parameters for amorphous semiconducting thin films in optical devices.The optical properties of the Ge–In–Se thin films are investigated since amorphous glasses with In of mole fraction 15%, Se of 60%–90% and the rest being Ge are easy to be formed within wide compositions domain.[5] Abdel-Rahim et al.[6] reported that the optical energy of the Ge–In–Se thin films decreases with the increase of Ge content, while refractive index and extinction coefficient收稿日期:2012–11–14。
聚焦透镜到靶材表面距离对等离子体红外光谱的影响
Applied Physics 应用物理, 2020, 10(1), 85-90Published Online January 2020 in Hans. /journal/apphttps:///10.12677/app.2020.101010Effect of the Distance from the FocusingLens to the Target Surface on the InfraredSpectrumYanming Ma, Xingsheng Wang, Xun Gao, Jingquan Lin*Ultrafast Optics Laboratory, Changchun University of Science and Technology, Changchun JilinReceived: Dec. 25th, 2019; accepted: Jan. 8th, 2020; published: Jan. 15th, 2020AbstractNd:YAG nanosecond pulsed laser was used to induce the aluminum target to generate plasma. By changing the distance from the focusing lens to the target surface (LTSD), the intensity of the atomic spectrum and the change of the plasma morphology were observed. In the wavelength range of the experimental study, the spectral lines we discussed are O I 1128 nm, N I 1249 nm, and Al I 1312 nm. The results show that the intensity of the spectral line changes with the change of LTSD. For a focusing lens with a focal length of 75 mm, the spectral intensity of O and Al reaches the maximum at LTSD of 70 mm, and the spectral line of N is the maximum at the focal point of the target surface.KeywordsIR, Nanosecond Pulsed Laser, Lens to Sample Surface Distance, Aluminum聚焦透镜到靶材表面距离对等离子体红外光谱的影响马彦明,王兴生,高勋,林景全*长春理工大学超快光学实验室,吉林长春收稿日期:2019年12月25日;录用日期:2020年1月8日;发布日期:2020年1月15日摘要使用Nd:YAG纳秒脉冲激光诱导铝靶材产生等离子体,通过改变聚焦透镜到靶材表面的距离(LTSD),观*通讯作者。
等离激元去相位时间的调控研究进展
Applied Physics 应用物理, 2020, 10(1), 15-23Published Online January 2020 in Hans. /journal/apphttps:///10.12677/app.2020.101003Research Progress of Modification thePlasmon Dephasing TimeShuo Wang, Boyu Ji, Yang Xu, Xiaowei Song*, Jingquan LinUltrafast Optics Laboratory, Changchun University of Science and Technology, Changchun JilinReceived: Dec. 17th, 2019; accepted: Jan. 1st, 2020; published: Jan. 8th, 2020AbstractPlasmon is an electromagnetic wave pattern formed when free electrons on a metal surface inte-ract with incident photons. The performance of a plasmon in an application is closely related to the damping of the plasmon. The dephasing time of the plasmon is an important parameter for evaluating the damping. Accurate measurement and manipulation of the dephasing time are pre-requisites for the development of plasmons in future applications. This paper presents the related research on changing the conditions of nanostructured materials, structure size, incident light source, plasmon mode, and coupling effect to control the dephasing time of plasmon field in metal nanostructures. The content described in this article will help people to further understand the dynamic evolution process of plasmon, and lay the foundation for the application of plasmon in the field of the ultrafast optical switches.KeywordsPlasmon, Dephasing Time, Plasmon Mode, Mode Coupling等离激元去相位时间的调控研究进展王硕,季博宇,徐洋,宋晓伟*,林景全长春理工大学超快光学实验室,吉林长春收稿日期:2019年12月17日;录用日期:2020年1月1日;发布日期:2020年1月8日摘要等离激元是金属表面的自由电子与入射光子相互作用时形成的一种电磁波模式,等离激元在应用中的性*通讯作者。
超快光学 第19章 放大
The ultrashort pulse returns many times to eventually extract most of the energy.
This approach achieves much greater efficiency.
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Two main amplification methods
pump
lpump
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Assume a saturable gain medium and J is the fluence (energy/area). Jout Assume all the pump energy is stored in the amplifier, but saturation effects will occur.
In both cases, pump pulse energy is wasted, and amplification is poor.
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So we need many passes.
All ultrashort-pulse amplifiers are multi-pass.
pump
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Another multi-pass amplifier
A Pockels cell (PC) and a pair of polarizers are used to inject a single pulse into the amplifier.
Ultrafast transient absorption spectroscopy principles and application to photosynthetic systems
REVIEWUltrafast transient absorption spectroscopy:principles and application to photosynthetic systemsRudi Berera ÆRienk van Grondelle ÆJohn T.M.KennisReceived:18February 2009/Accepted:5June 2009/Published online:4July 2009ÓThe Author(s)2009.This article is published with open access at Abstract The photophysical and photochemical reac-tions,after light absorption by a photosynthetic pigment–protein complex,are among the fastest events in biology,taking place on timescales ranging from tens of femto-seconds to a few nanoseconds.The advent of ultrafast laser systems that produce pulses with femtosecond duration opened up a new area of research and enabled investigation of these photophysical and photochemical reactions in real time.Here,we provide a basic description of the ultrafast transient absorption technique,the laser and wavelength-conversion equipment,the transient absorption setup,and the collection of transient absorption data.Recent appli-cations of ultrafast transient absorption spectroscopy on systems with increasing degree of complexity,from bio-mimetic light-harvesting systems to natural light-harvest-ing antennas,are presented.In particular,we will discuss,in this educational review,how a molecular understanding of the light-harvesting and photoprotective functions of carotenoids in photosynthesis is accomplished through the application of ultrafast transient absorption spectroscopy.Keywords Ultrafast spectroscopy ÁPhotosynthesis ÁLight-harvesting antennasAbbreviations(B)Chl (Bacterio)Chlorophyll BPheo Bacteriopheophtin EADS Evolution-associated difference spectra ESA Excited-state absorption FWHM Full-width at half maximum LHC Light-harvesting complex PSII Photosystem II RC Reaction center SADS Species-associated difference spectra SE Stimulated emissionIntroductionThe process of photosynthesis relies upon the efficient absorption and conversion of the radiant energy from the Sun.Chlorophylls and carotenoids are the main players in the process.While the former are involved in light-har-vesting and charge separation process,the latter also play vital photoprotective roles.Photosynthetic pigments are typically arranged in a highly organized fashion to con-stitute antennas and reaction centers,supramolecular devices where light harvesting and charge separation take place.The very early steps in the photosynthetic process take place after the absorption of a photon by an antenna sys-tem,which harvests light and eventually delivers it to the reaction center (Van Grondelle et al.1994).Despite the enormous variety of photosynthetic organisms,the primary events leading to photosynthetic energy storage areremarkably similar (Sundstro¨m 2008).In order to compete with internal conversion,intersystem crossing,and fluo-rescence,which inevitably lead to energy loss,the energyR.Berera ÁR.van Grondelle ÁJ.T.M.Kennis (&)Department of Physics and Astronomy,Faculty of Sciences,VU University Amsterdam,De Boelelaan 1081,1081HV Amsterdam,The Netherlands e-mail:john@nat.vu.nlPresent Address:R.BereraInstitute of Biology and Technology of Saclay,CEA (Commissariat a l’Energie Atomique),URA 2096CNRS (Centre National de la Recherche Scientifique),91191Gif/Yvette,FrancePhotosynth Res (2009)101:105–118DOI 10.1007/s11120-009-9454-yand electron transfer processes thatfix the excited-state energy in photosynthesis must be extremely fast.In order to investigate these events,ultrafast techniques down to a sub-100fs resolution must be used.In this way,energy migration within the system as well as the formation of new chemical species such as charge-separated states can be tracked in real time.This can be achieved by making use of ultrafast transient absorption spectroscopy.The basic principles of this technique,instrumentation,and some recent applications to photosynthetic systems that involve the light-harvesting and photoprotective functions of carotenoids are described in this educational review.For earlier reviews on ultrafast spectroscopy,see e.g.,Jimenez and Fleming(1996),Groot and Van Grondelle(2008),and Zigmantas et al.(2008).Ultrafast transient absorption spectroscopyThe principle of ultrafast transient absorption spectroscopyThe process of energy transfer in a photosynthetic mem-brane typically takes place on a time scale from less than 100fs to hundreds of ps(Sundstro¨m et al.1999;Van Amerongen and Van Grondelle2001;Van Grondelle et al. 1994).The advent of ultrashort tunable laser systems in the early1990s has opened up a new and extremely fascinating area of research.Nowadays,the high(sub50fs)time resolution has made it possible to investigate the very early events taking place within a light-harvesting antenna in real time(Sundstro¨m2008).In transient absorption spectros-copy,a fraction of the molecules is promoted to an elec-tronically excited state by means of an excitation(or pump) pulse.Depending on the type of experiment,this fraction typically ranges from0.1%to tens of percents.A weak probe pulse(i.e.,a pulse that has such a low intensity that multiphoton/multistep processes are avoided during prob-ing)is sent through the sample with a delay s with respect to the pump pulse(Fig.1).A difference absorption spec-trum is then calculated,i.e.,the absorption spectrum of the excited sample minus the absorption spectrum of the sample in the ground state(D A).By changing the time delay s between the pump and the probe and recording a D A spectrum at each time delay,a D A profile as a function of s and wavelength k,i.e.,a D A(k,s)is obtained.D A(k,s) contains information on the dynamic processes that occur in the photosynthetic system under study,such as excited-state energy migration,electron and/or proton transfer processes,isomerization,and intersystem crossing.In order to extract this information,global analysis procedures may be applied(see below).One advantage of time-resolved absorption spectroscopy over time-resolvedfluorescence is that with the former,the evolution of non-emissive states and dark states can be investigated.This is of particular importance in photosynthesis where carotenoid dark(non-emissive)states play a number of vital roles.In general,a D A spectrum contains contributions from various processes:(1)Thefirst contribution is by ground-state bleach.As afraction of the molecules has been promoted to the excited state through the action of the pump pulse,the number of molecules in the ground state has been decreased.Hence,the ground-state absorption in the excited sample is less than that in the non-excited sample.Consequently,a negative signal in the D A spectrum is observed in the wavelength region of ground state absorption,as schematically indicated in Fig.1(dashed line).(2)The second contribution is by stimulated emission.For a two-level system,the Einstein coefficients for absorption from the ground to the excited state(A12)and stimulated emission from the excited to the ground state(A21)are identical.Thus,upon popula-tion of the excited state,stimulated emission to the ground state will occur when the probe pulse passes through the excited volume.Stimulated emission will occur only for optically allowed transitions and will have a spectral profile that(broadly speaking)follows thefluorescence spectrum of the excited chromo-phore,i.e.,it is Stokes shifted with respect to the ground-state bleach.During the physical process of stimulated emission,a photon from the probe pulse induces emission of another photon from the excited molecule,which returns to the ground state.The photon produced by stimulated emission is emitted in the exact same direction as the probe photon,and hence both will be detected.Note that the intensity of the probe pulse is so weak that the excited-state population is not affected appreciably by this process.Stimulated emission results in an increase of light intensity on the detector,corresponding to a negativeD A signal,as schematically indicated in Fig.1(dottedline).In many chromophores including bacteriochlo-rophyll(BChl),the Stokes shift may be so small that the stimulated emission band spectrally overlaps with ground-state bleach and merges into one band. (3)The third contribution is provided by excited-stateabsorption.Upon excitation with the pump beam, optically allowed transitions from the excited(pop-ulated)states of a chromophore to higher excited states may exist in certain wavelength regions,and absorption of the probe pulse at these wavelengths will occur.Consequently,a positive signal in the D A spectrum is observed in the wavelength region of excited-state absorption(Fig.1,solid line).Again,the intensity of the probe pulse is so weak that the excited-state population is not affected appreciably by the excited-state absorption process.(4)A fourth possible contribution to the D A spectrum isgiven by product absorption.After excitation of the photosynthetic,or more generally photobiological or photochemical system,reactions may occur that result in a transient or a long-lived molecular state,such as triplet states,charge-separated states,and isomerized states.The absorption of such a(transient)product will appear as a positive signal in the D A spectrum.A ground-state bleach will be observed at the wave-lengths where the chromophore on which the product state resides has a ground-state absorption.A well-known example of such a transient product state is the accessory bacteriochlorophyll(BChl)anion in the bacterial reaction center(RC),which acts as a transient intermediate in the electron transfer process from the primary donor P to the bacteriopheophytin(BPheo).The rise and decay of this species can be monitored through its specific product absorption at 1,020nm(Arlt et al.1993;Kennis et al.1997a). Pulse duration,time resolution,and spectral selectivity Laser pulses as short as5fs are now available for transient absorption spectroscopy(see,e.g.,Cerullo et al.(2002); and Nishimura et al.(2004)).A short pulse duration D t implies a large spectral bandwidth D v according to relation D t D v=0.44for Gaussian-shaped pulses.This relation is known as the time–bandwidth product.For instance,a10-fs pulse with a center wavelength of800nm has a spectral bandwidth of4.491013Hz at full-width at half maximum (FWHM),which corresponds to about100nm in this wavelength region.Thus,one has to make a trade-off between time resolution and spectral selectivity.Consider the example of the bacterial RC,which has the primary donor absorbing at860nm,the accessory BChls at 800nm,and the BPheos at760nm.With a10-fs pulse at 800nm,one would simultaneously excite all the cofactors. In order to selectively excite one of the cofactor pairs to study its excited-state dynamics,spectral narrowing to *30nm is required,which implies a longer excitation pulse of*30fs(Streltsov et al.1998;Vos et al.1997).For the photosystem II(PSII)RC,where the energy gaps between the pigments are significantly smaller,the exci-tation bandwidth has to be narrowed even more to\10nm for selective excitation,with corresponding pulse durations of*100fs(Durrant et al.1992;Groot et al.1997).On very fast timescales,transient absorption signals have contributions from processes additional to those described in the previous section.These non-resonant contributions are often lumped together under the terms‘‘coherent arti-fact’’and‘‘cross-phase modulation.’’As transient absorp-tion signals result from light–matter interaction through the third-order non-linear susceptibility v(3)(Mukamel1995), non-sequential light interactions that do not represent pop-ulation dynamics of electronic states will contribute to the signals.Such undesired signals can be ignored by excluding the initial phases of the femtosecond dynamics from the data interpretation and analysis.On the other hand,they may be explicitly included in the analysis by considering their physical origin.In such a case,assumptions need to be made about the lineshapes and dephasing times of the chromo-phore in question(Novoderezhkin et al.2004).Cross-phase modulation effects are due to a change in the index of refraction of solvent and cuvette induced by the pump beam and give rise to oscillatory patterns around zero delay (Kovalenko et al.1999).These artifacts can in principle be subtracted from the data by recording an experiment in a cuvette with the solvent.Equipment:amplified Ti:sapphire laser systemsand optical parametric amplifiersGenerally speaking,two types of ultrafast transient absorption spectroscopy setups are widely used today for photosynthesis research,distinguished by the repetition rate and pulse energies at which they operate:thefirst type involves systems with a repetition rate of1–5kHz with a relatively high pulse energy.The second type involves systems with a repetition rate in the range40–250kHz with a relatively low pulse energy.In addition,the direct or cavity-dumped output from a Ti:sapphire oscillator has frequently been employed for transient absorption spec-troscopy,but will not be discussed here(Arnett et al.1999; Kennis et al.1997b;Nagarajan et al.1996;Streltsov et al. 1998;Vulto et al.1999).Thefirst type of spectroscopy typically provides the experimenter with excitation energies of5–100nJ,which when focused on150–200l m diameter(the regular focus-ing conditions in our laboratory)typically results in2–20% of the molecules being promoted to the excited state.This value is only approximate,since the accurate estimate of the excitation density depends on several factors,namely,the exact size of the focus,the concentration of the chromoph-ores,and their extinction coefficient.The relatively high excitation densities achieved with these systems make them suitable to study complexes with a relatively small number of connected pigments such as pigments in solution(Billsten et al.2002;Cong et al.2008;De Weerd et al.2003;Nied-zwiedzki et al.2007;Polivka et al.1999),isolated reaction centers(De Weerd et al.2002;Holzwarth et al.2006a, 2006b;Wang et al.2007),isolated light-harvesting antenna complexes(Croce et al.2001;Gradinaru et al.2000,2001; Ilagan et al.2006;Krueger et al.2001;Papagiannakis et al. 2002,2003;Polı´vka et al.2002;Polivka and Sundstro¨m 2004;Zigmantas et al.2002),artificial antenna systems (Berera et al.2006,2007;Kodis et al.2004;Pan et al.2002), and photoreceptor proteins that bind only a single chromo-phore(Kennis and Groot2007;Wilson et al.2008).With appropriate detection schemes that involve multichannel detection on a shot-to-shot basis,signal detection sensitiv-ities of*10-5units of absorbance over a broad wavelength range can be achieved,implying that molecular species with a small extinction coefficient or that accumulate in very low (transient)concentrations can be detected(Berera et al. 2006;Wilson et al.2008).A drawback of a1–5-kHz system is that with its relatively high excitation densities,multiple excited states may appear in a single multichromophoric complex,resulting in singlet–singlet annihilation processes among(B)Chls(Van Grondelle1985).With the laser systems that operate at40–250kHz,a lower pulse energy can be used for excitation with respect to the kHz systems owing to their higher repetition rate,which allows more laser shots to be averaged per unit time. Typically,pulse energies of0.5–10nJ are used,roughly corresponding to excited-state populations of\1–10%. Under the right circumstances,detection sensitivities of *10-6units of absorbance can be achieved.Accordingly, this kind of system has been used to study exciton migra-tion in large systems with many connected pigments such as chloroplasts and light-harvesting complex(LHC)II aggregates(Holt et al.2005;Ma et al.2003;Ruban et al. 2007).In addition,it has been used to examine exciton migration in isolated LH complexes under annihilation-free conditions(Monshouwer et al.1998;Novoderezhkin et al. 2004;Palacios et al.2006;Papagiannakis et al.2002). Drawbacks of this type of systems involve the shorter time between pulses(4–20l s),which may lead to the build-up of relatively long-lived species such as triplet or charge-separated states.In addition,multichannel detection on a shot-to-shot basis has been limited to14channels at such high repetition rates(Ruban et al.2007),although signifi-cant strides are currently being made in our laboratory to resolve this limitation.Figure2shows a scheme of an ultrafast transient absorption setup,as it exists today in the Biophysics Lab-oratory of the Laser Center at the Vrije Universiteit(LCVU) in Amsterdam,The Netherlands.A broadband oscillator (Coherent Vitesse)generates pulses of*30fs duration with a wavelength of800nm,a bandwidth of*35nm at a repetition rate of80MHz.The pulses from the oscillator are too weak to perform any meaningful spectroscopy and therefore have to be amplified.Femtosecond pulse ampli-fication is not a trivial matter because at high energies,the peak power in a femtosecond pulse becomes so high that amplification and pulse-switching media such as crystals and Pockels cells easily get damaged.A Pockels cell is an electro-optical device containing a crystal,such as potas-sium dihydrogenphosphate(KH2PO4),capable of switching the polarization of light when an electrical potential differ-ence is applied to it.In this way,the amount of stimulated emission from the laser cavity can be controlled.For this reason,femtosecond pulse amplification is carried out through the chirped-pulse amplification principle:the pulse from the oscillator(hereafter,referred to as‘‘seed pulse’’)is first stretched to*200ps by a stretcher,which temporally delays the‘‘blue’’wavelengths within the pulse bandwidth of*35nm with respect to the‘‘red’’wavelengths by means of a grating pair.Then,the seed pulse is coupled into a regenerative amplifier(Coherent Legend-UltraShort Pulse (USP)).There,the seed pulse travels through a Pockels cell which sets its polarization in such a way that it becomes trapped within the amplifier’s cavity.On traveling back and forth in the cavity,it passes through a Ti:sapphire crystal that is pumped at1-kHz repetition rate by a diode-pumped Nd:YLF pump laser at527nm(Coherent Evolution,30W).At each passage through the crystal,the trapped seed pulse is amplified until saturation is reached.Then,the Pockels cell switches the polarization of the amplified pulse which results in its ejection from the amplifier.The amplified pulse is compressed to*45fs by temporally synchronizing the ‘‘blue’’and‘‘red’’wavelengths within the pulse bandwidth, essentially the reverse of the‘‘stretching’’procedure.At this point,the output from the laser system is a40-fs pulse at an energy of2.5mJ,a center wavelength of800nm,a band-width of30nm,and a repetition rate of1kHz.In order to perform transient absorption spectroscopy with a Ti:sapphire laser alone,one is restricted to a wavelength region for the excitation pulse around800nm, allowing only the study of some BChl a-containing systems (Arnett et al.1999;Kennis et al.1997b;Nagarajan et al. 1996;Novoderezhkin et al.1999;Streltsov et al.1998; Vulto et al.1999).In order to shift the wavelength to other parts of the visible and near-IR spectra,optical parametric amplifiers(OPAs)or optical parametric generators(OPGs) are typically used.In an OPA,non-linear birefringent crystals such as beta barium borate(BBO)are pumped by the direct output of the amplified laser system at800nm or frequency-doubled pulses at400nm.The pump is tempo-rally and spatially overlapped with a white-light continuum in the crystal,and depending on the angle between the laser beam and the symmetry axis of the crystal,two particular wavelengths of the white-light continuum called‘‘signal’’and‘‘idler’’are amplified through the second-order non-linear polarizability of the crystal,of which the signal has the shortest wavelength and is routinely selected for further use.Since pump,signal,and idler beams have different polarizations,the group velocity of pump,signal,and idler beams can be made equal by varying the angle between the laser beam and the symmetry axis of the birefringent crystal.This allows energy from the pump beam to be converted to the signal and idler beams over a large propagation length up to millimeters.This is the so-called phase-matching condition.Conservation of energy requires that the sum of the frequencies of signal and idler add up to the frequency of the pump beam.Thus,800-nm-pumped OPAs operate in the near-InfraRed(IR)(1,100–1,600nm for the signal)while400-nm-pumped OPAs operate in the visible(475–750nm for the signal)ing the output of an OPA as a basis,essentially all wavelengths from the UltraViolet(UV)to mid-IR can be generated at relatively high pulse energies by using non-linear mixing processes such as frequency-doubling,sum-frequency generation,and difference-frequency generation in suitable non-linear crystals.Obviously,visible and near-IR light are the most useful wavelengths for the study of photosynthetic systems.In addition,mid-IR wavelengths are very useful for probing molecular vibrations of chlorophylls and carotenoids(Groot et al.2005,2007).The pulse duration out of the OPA roughly corresponds to that of the amplified Ti:sapphire laser system.The pulse energy from our regenerative laser amplifier of2.5mJ allows simultaneous pumping of several OPAs.The latter option is important for experiments that require multiple pump pulses,such as pump–dump or pump–repump experiments(Kennis et al. 2004;Larsen et al.2003;Papagiannakis et al.2004).The transient absorption setupIn order to vary the time delay between the excitation and probe pulses,the excitation pulse generated by the OPA is sent through an optical delay line,which consists of a retroreflector mounted on a high-precision motorized computer-controlled translation stage.The translation stage employed in our experiments has an accuracy and repro-ducibility of0.1l m,which corresponds to a timing accu-racy of0.5fs.The delay line can be moved over80cm, implying that time delays up to5ns can be generated between excitation and probe beams.The excitation beam is focused in the sample to a diameter of130–200l m and blocked after the sample.In most cases,the polarization of the pump beam is set at the magic angle(54.7°)with respect to that of the probe to eliminate polarization and photoselection effects(Lakowicz2006).For the detection of the pump-induced absorbance changes,a part of the amplified800-nm light is focused on a sapphire or calciumfluoride plate(though other materials such as quartz,MgF2,water,and ethylene glycol can also be used)to generate a white-light continuum.In the absence of special precautions,the white-light continuum may range from*400to*1,100nm(depending on the material)and be used as a broadband probe;its intensity is so weak that it does not transfer an appreciable population from the ground to the excited state(or vice versa).It is focused on the sample to a diameter slightly smaller than the pump,spatially overlapped with the pump,collimated, and sent into a spectrograph.There,it is spectrally dis-persed and projected on a silicon diode array that consists of tens to hundreds of elements.The diode array is read out by a computer on a shot-to-shot basis,in effect measuring an absorption spectrum with each shot.Under some experimental conditions,detection with a diode array is not possible or appropriate.For instance,for many experiments in the near-IR and the UV,other detector types need to be employed that,in combination with the white-light continuum intensities at those wave-lengths,lack the sensitivity required for array detection.In these cases,single wavelength detection is often employed. In the mid-IR(*3–10l m),mercury cadmium telluride (MCT)arrays that consist of32or64elements are avail-able(Groot et al.2007).Another detection method in the visible spectrum employs a charge-coupled device(CCD) detector.Frequently,a reference beam is used to account for shot-to-shot intensityfluctuations in the white-light continuum.In such a case,the white-light continuum beam is split in two beams,the probe and the reference.The probe is overlapped with the pump beam in the sample, while the reference beam is led past the sample(or through the sample past the excited volume).The probe and ref-erence beams are then projected on separate diode arrays.During data collection,the probe beam is divided by the reference beam,which may lead to improved signal to noise because the intensityfluctuations of the white-light continuum are eliminated.By the nature of the white-light generation process,the white light is‘‘chirped’’on generation,i.e.,the‘‘blue’’wavelengths are generated later in time than the‘‘red’’wavelengths.The exact temporal properties depend on the specific generation conditions.Hence,the white-light continuum has an‘‘intrinsic’’group-velocity dispersion. When traveling through optically dense materials such as lenses and cuvettes,the group velocity dispersion in the white light readily increases to picoseconds.This effect can be minimized by using parabolic mirrors for collimation and focusing of the white-light beam between its point of generation and the sample.The group velocity dispersion may be accounted for in the data analysis and described by a polynomial function.Alternatively,the white-light con-tinuum can be compressed by means of a grating pair or prism pair in such a way that the‘‘red’’and‘‘blue’’wavelengths in the probe beam coincide in time.The instrument response function of this particular tran-sient absorption apparatus,which can be measured by fre-quency mixing in a non-linear crystal placed at the sample spot or by the transient birefringence in CS2or water,can usually be modeled with a Gaussian with a FWHM of 120fs.If required,the white-light continuum can be com-pressed down to*10fs by means of a grating pair or prism pair;in such a case,the instrument response function is generally limited by the duration of the pump pulse.For measurements at room temperature,the sample is placed in a1–2-mm quartz cuvette which is either con-nected to aflow system or mounted on a shaker to prevent exposure of the same excited volume to multiple laser shots and to prevent sample degradation.Collection of transient absorption spectraA transient absorption experiment proceeds as follows:the time delay between excitation and probe beams isfixed. Before reaching the sample,the excitation beam(that delivers a pulse every1ms)passes through a mechanical chopper that is synchronized to the amplifier in such a way that every other excitation pulse is blocked.Thus,alter-nately the sample is being excited and not excited.Con-sequently,the white-light continuum that is incident on the detector diode array alternately corresponds to a‘‘pumped’’and‘‘unpumped’’sample,and the detector alternately measures the intensity of the probe beam of a‘‘pumped’’and‘‘unpumped’’sample,I(k)pumped and I(k)unpumped. I(k)pumped and I(k)unpumped are stored in separate buffers (while keeping the time delay between pump and probe fixed),and a number of shots that is sufficient for anacceptable signal-to-noise ratio is measured,usually103–104.With the shot-to-shot detection capability of the multichannel detection system,particular spectra that deviate from the average(‘‘outliers’’)can in real time be rejected during data collection,significantly improving signal-to-noise ratio.A second white-light beam(the ref-erence beam)not overlapping with the pump pulse can also be used to further increase the signal-to-noise ratio.From the averaged values of I(k)pumped and I(k)unpumped,an absorbance difference spectrum D A(k)is constructed according toD AðkÞ¼ÀlogðIðkÞpumped =IðkÞunpumpedÞ:Then,the delay line is moved to another time delay between pump and probe,and the above procedure is repeated.In total,absorbance difference spectra at approximately100–200time points between0fs and*5ns are collected, along with absorbance difference spectra before time zero to determine the baseline.In addition,many spectra are collected around the time that pump and probe pulse overlap in time(‘‘zero delay’’)to enable accurate recording of the instrument response function.This whole procedure is repeated several times to test reproducibility,sample stability,and long-termfluctuations of the laser system.In this way,an entire dataset D A(k,s)is collected. Anisotropy experiments in transient absorption spectroscopyIn photosynthetic antennae and reaction centers,the pig-ments are bound in a well-defined way.Energy and elec-tron transfer processes and pathways can be specifically assessed through the use of polarized excitation and probe beams.The time-dependent anisotropy is defined asrðtÞ¼ðD A kðtÞÀD A?ðtÞÞ=ðD A kðtÞþ2D A?ðtÞÞ:With D A k(t),the time-dependent absorbance difference signal with pump and probe beams is polarized parallel, and with D A\(t),the time-dependent absorbance difference signal with pump and probe beams is polarized perpen-dicular.In light-harvesting antennae,the decay of r(t) indicates the elementary timescales of exciton migration, be it through incoherent hopping or exciton relaxation (Kennis et al.1997b;Nagarajan et al.1996;Novoderezhkin et al.1998;Savikhin et al.1994,1998,1999;Vulto et al. 1999;Vulto et al.1997).Energy transfer or exciton relaxation processes often occur among(pools of)Chls that have their absorption maxima at similar wavelengths. Consequently,these processes are associated with small spectral shifts of the D A spectra and are there-fore difficult to observe under magic angle detection con-ditions.Through time-resolved anisotropy experiments,the timescales of such fast exciton migration events can accurately be determined.Data analysisIn time-resolved spectroscopic experiments,the very large amounts of data collected can be analyzed by global and target analysis techniques(Van Stokkum et al.2004).A typical time-resolved experiment D A(k,s)in fact consists of a collection of thousands of data points,i.e.,tens to hun-dreds wavelengths times one to two hundred data points.In order to extract valuable information,one could simply take slices of the data;for instance,one could take one wavelength and look at its evolution in time(a so-called kinetic trace),or one could plot the signal at different wavelengths for a given time point(a D A spectrum).This is normally thefirst stage of the data analysis where the experimentalist has a glimpse of an expected(or unex-pected)process.The next step in the data analysis is to apply the so-called global analysis techniques,in an attempt to distill the overwhelming amount of data into a relatively small number of components and spectra.In the most basic model,the femtosecond transient absorption data are globally analyzed using a kinetic model consisting of sequentially interconverting evolution-associated dif-ference spectra(EADS),i.e.,1?2?3?ÁÁÁin which the arrows indicate successive monoexponential decays of increasing time constants,which can be regarded as the lifetime of each EADS.Thefirst EADS correspond to the time-zero difference spectrum.This procedure enables a clear visualization of the evolution of the(excited)states of the system.Based on the insight obtained from this model and from the raw data,one can then take a further step in the analysis and apply a so-called target kinetic scheme. The EADS that follow from the sequential analysis are generally made up from a mixture of various molecular species.In general,the EADS may well reflect mixtures of molecular states.In order to disentangle the contributions from these molecular species and obtain the spectrum signature of the‘‘pure’’excited-and product state inter-mediates(the so-called species-associated difference spectra,SADS),a specific kinetic model must be applied in a so-called target analysis procedure.In this way,the energy and electron transfer mechanisms can be assessed in terms of a number of discrete reaction intermediates.A comprehensive review of global and target analysis tech-niques has been published(Van Stokkum et al.2004).In the next section,we illustrate a few examples of time-resolved experiments and data analysis.We will start with the description of elementary energy transfer processes in artificial systems followed by more complex examples in natural light-harvesting compounds.。
双折射外腔双频激光器光回馈
双折射外腔双频激光器光回馈刘音;李岩【摘要】为了研究双频激光器的光回馈特性,采用双折射外腔光回馈的方法,进行了理论分析和实验验证,取得了双频激光器中条纹倍频现象的数据.结果表明,光回馈系统分辨率提高了1倍,同时利用双频激光器两垂直偏振光间的模竞争,使得倍频条纹的调制幅度明显增大,从而使得光回馈系统的灵敏度大大提高.实验结果与理论分析吻合,这对提高光回馈系统的分辨率是有帮助的.【期刊名称】《激光技术》【年(卷),期】2007(031)005【总页数】3页(P459-461)【关键词】激光技术;光回馈;模竞争;自混合干涉;双频激光器【作者】刘音;李岩【作者单位】清华大学,精密仪器系,精密仪器与测试技术国家重点实验室,北京,100084;清华大学,精密仪器系,精密仪器与测试技术国家重点实验室,北京,100084【正文语种】中文【中图分类】O436.1引言光回馈[1,2]是指在激光应用系统中,激光器输出光被外部物体反射或散射后,部分光反馈回激光谐振腔内并与腔内光混合,引起激光器的输出光强变化的现象,该现象也称作自混合干涉[3,4]或背向散射调制[5,6]。
KING[7]于1963年首次报道了光回馈现象,发现一个可移动的外部反射镜能引起激光光强的波动,光强波动的条纹类似于传统的双光束干涉现象,外部反射镜每移动半个光波波长的位移,激光器光强变化一个条纹,条纹的波动深度与传统双光束干涉系统可比较。
光回馈干涉仪具有和传统的干涉仪相同的相位灵敏度,而且结构简单紧凑。
而在研究双折射外腔光回馈的过程中发现了条纹倍频现象[8],即双折射外腔中的石英晶体在某一特定转角下可使得光回馈系统的光回馈条纹成倍增加,从而提高了光回馈系统分辨率。
但在系统分辨率提高的同时,光强条纹的波动深度减小了,系统的灵敏度也随之降低。
作者将双频激光器[9~11]引入双折射外腔的光回馈系统,不仅观测到双频激光器中的条纹倍频现象,而且利用双频激光器两垂直偏振光间的模竞争,使得倍频条纹的调制幅度明显增大,因此,以双频激光器为光源的双折射外腔光回馈系统,不仅可以使光回馈系统的分辨率提高1倍,而且也可以使光回系统的灵敏度大大提高。
WC5(Invited)
Silicon Photonic Crystal Waveguide ModulatorsLanlan Gu 1, Wei Jiang 2, Xiaonan Chen 1, Ray T. Chen 1*Microelectronic Research Center, Department of Electrical and Computer Engineering,1. The University of Texas at Austin, Austin, TX 78758, USA2. Omega Optics Inc, Austin, TX 78758, USA*Email:***************.eduAbstractUltra-compact silicon-photonic-crystal-waveguide-based thermo-optic and electro-opticalMach-Zehnder interferometers have been proposed and fabricated. Thermal and electricalsimulations have been performed. Experimental results were in a good agreement with thetheoretical prediction.IntroductionThe driving force behind the development of silicon photonics is the monolithic integration of optics and microelectronics. Silicon remains the dominant material for microelectronics ever since the invention of the integrated circuit. Silicon-on-insulator (SOI) has been identified as a promising material for integrated optoelectronics. CMOS circuits fabricated on SOI benefit from reduced parasitics and absence of latch-up problem, which enable high-speed and low-power operations. SOI also provides strong optical confinement for the telecommunication wavelengths serving as an ideal platform to realize the guided-wave micro- and nano- photonic devices. Silicon microelectronic devices have undergone numerous generations of feature size reduction. However, there has been little progress made in the miniaturization of the silicon based optical components. Photonic crystal provides a promising platform to build ultra-compact and high-performance photonic devices [1]. It has been demonstrated that the light propagation in a photonic crystal waveguide (PCW) can have much slower group velocity than that in the conventional waveguides [2]. Such a slow-photon effect greatly enhances the interaction between the light wave and the wave-guiding materials, namely, it amplifies the optical response of materials to the external fields, such as thermal and electrical fields. It thus potentially leads to a significant reduction in size and power consumption. In this paper, we present the simulation and experimental results for ultra-compact silicon-PCW-based thermo-optic (TO) and electro-optical (EO) Mach-Zehnder interferometers (MZIs).Results and discussionFor low-cost and low-frequency applications, the TO effect is considered an attractive alternative to the free-carrier EO effect for realization of optical switching and modulation [3, 4]. Silicon is an ideal material for implementing TO MZIs operating at 1.5µm mainly because: (1) silicon is transparent at this communication wavelength, (2) the TO coefficient is high in silicon, which is approximately 1.86 X10-4 K -1 , two times greater than polymers and twenty times greater than SiO 2 and Si 3N 4; (3) the thermal conductivity of silicon is also high, which is 100 times higher than SiO 2, and therefore it provides a comparatively fast switching speed. The microscope image of the fabricated silicon-PCW-based TO MZI is shown in Fig. 1 (a). This device was fabricated on a SOI wafer with a 220 nm-thick top silicon layer and a 2 µm-thick buried oxide layer. The pitch size of the hexagonal photonic crystal lattice is a = 400 nm. The normalized air hole diameter is designed to be (a)(b) Fig. 1 (a) Microscope image of the TO MZI;(b) Scanning electron microscope (SEM) image of a PCW at the 45o viewing angle.WC5 (Invited)18:00 – 18:30d/a = 0.53. Details of the fabrication were published in [5]. A Scanning electron microscope (SEM) image of the 45o -view of the PCW in conjunction with an input strip waveguide is shown in Fig. 1 (b). The length of photonic crystal waveguides is 80 µm. An aluminum thin-film micro-heater with the dimension of 8µm X100 µm was deposited on the silicon layer. It was on one side of the active arm of the MZI. A static thermal analysis of such a device was performed using a finite element modeling software, ANSYS. The simulated temperature profile across the device showed a temperature rise of 9o C in the line-defect region under an input ohmic heating power of 70 mW. It can be calculated, in a conventional silicon TO MZI, it requires an active region at least of 460 µm to obtain the π phase shift of the optical signal at 1.55 µm for a 9 o C temperature increase. Details of the calculation were previously reported [5]. However, in the PCW based MZI, the required length of the active region could be reduced significantly due to the amplification of TO effect in photonic crystals, which is intrinsically associated with the high-dispersion property of the PCW. We have experimentally demonstrated a size reduction of the silicon-PCW-based MZI by almost one order of magnitude compared with conventional TO MZIs [6].The modulation measurements were performed on afully-automated Newport Photonics Alignment/Packaging Station. The input and output lensed fibers canbe accurately aligned with silicon waveguides by twofive-axis high-precision stages with computerizedcontrol. TE waves were used for the opticalmeasurements. We chose wavelength at 1548nm, whichis at the edge of the defect mode, for the switchingproperty characterization. Switching characteristics wereobtained through a digital communication analyzer. Themeasured 3dB bandwidth was 30 kHz, which is a typicalvalue of a TO switch. The modulation curves at 1 kHzand 30 kHz are shown in Fig. 2 (a) and (b), respectively.The rise (10% to 90%) time and fall (90% to 10%) timewere measured to be 19 µs and 11 µs, respectively. It wasone order of magnitude faster than that was reported in aconventional structure with the micro-heater placed onthe top of the PCW region [7]. The maximummodulation depth of 84% was achieved at the switchingpower of 78 mW. The power consumption can bereduced by optimizing the heater geometry. It waspreviously shown by the ANSYS thermal simulation, asmall temperature variation of 9 o C was obtained in thePCW region with a supplied heat power of 70 mW. Itwould require an active region at least 460 µm to achieveπ phase shift in a conventional rib or strip waveguide based silicon TO MZI. Our experiments demonstrated almost a one-order of magnitude reduction in the lengthof the device active region, which obviously benefitedfrom the slow group-velocity of the PCW.The main drawback of the TO modulator is itscomparative low switching speed. A feasible way torealize high-speed optical modulation in the GHz domainis to utilize the EO effect instead of the TO effect. MostEO silicon modulators operate based on plasmadispersion effect. The relation between the variation ofthe refractive index and perturbation of free-carrierconcentration was studied by Scorf [8]. Here, wepropose a lateral p-i-n configuration for a PCW based EOMZI, which has a different structure from as previouslyreported [9]. In this device, index tuning was achieved using a forward biasing voltage to inject free carriers into photonic crystal region of the active arm. The switchingspeed of such a p-i-n diode based device is usually determined by the carrier recombination time or carrier transit time depending on which one is larger. The transient characteristics of the p-i-n diode were simulated using a (a) (b)Fig. 2 Modulation curves at (a) 1 kHz and (b) 30 kHz. Fig. 3 Transient free-carrier distributions along lateral distance of the p-i-n diode.two-dimensional semiconductor device simulator MEDICI. Thesimulated p-i-n device has an n-type background dopingconcentration of 1015 /cm 3 in the i region, whereas a uniformdoping concentration of 2X1019 /cm 3 was assumed for both p +and n + regions. The lateral electrodes were defined on top of thep + and n + regions, separated by 2µm from the PCW line defect.It is clearly shown in Fig. 3 that the minority carrier injection inthe intrinsic region, which is also the PCW region, is fairlyuniform. A carrier concentration perturbation of around 3X1017/cm 3, which induced a real refractive-index change of siliconabout -0.001, was predicted within 0.63ns under a forward biasing voltage of 2V. Further decrease of response time can be achieved by reducing the separation distance between the two lateral electrodes. For an index variation about 0.001, it usuallyrequires one-half to several millimeters active region to obtain the required π phase shift in the conventional rib waveguide based MZIs [10]. However, in our proposed PCW based MZI modulators, an active PCW region with a few tens of microns in length is long enough to achieve sufficient phase shift [9]. The microscope image of the fabricated p-i-n diode based silicon PCW MZI is shown in Fig. 4. As shown in Fig. 4, the p + and n + regions were carefully designed to avoid electrical breakdown at the fragile edges of photonic crystal waveguides and the advantages of such a design have been demonstrated in experiments. Extensive electrical and optical measurements is currently under investigation. More detailed experimental results will be presented at the conference.SummaryIn summary, we have proposed and fabricated ultra-compact silicon-PCW-based EO and TO MZIs. Device configurations were carefully designed based on the thermal and electrical simulations. The size of the silicon modulators was significantly reduced by incorporating the PCW into to MZIs. Both TO and EO devices have been fabricated and characterized.AcknowledgementsThis research is supported by AFOSR, DARPA’s AP2C program and NSF’s NNIN program. Technical advices from Dr. Gernot Pomrenke and Dr. Richard Soref are acknowledged.References[1]J. D. Joannopoulos, R. D. Meade, and J. Winn, Photonic Crystals , Princeton University Press, 1995. [2]M. Notomi, K. Yamada, A. Shinya, J. Takahashi, C. Takahashi, and I. Yokohama, “Extremely Large Group-Velocity Dispersion of Line-defect Waveguides in Photonic Crystal Slabs,” Phys. Rev. Lett ., 87, 253902 (2001). [3] G. Cocorullo, M. Iodice, I. Rendina, and P. M. Sarro, “Silicon thermaloptical micromodulator with 700-kHz-3-dBbandwidth ,” IEEE. Photonic technology letters , 7, 363 (1995).[4] Y. A. Vlasov, Martin O’Boyle, Hendrik F. Hamann, and S. J. McNab, “Active control of slow light on achip with photonic crystal waveguides,” Nature , 438, 65 (2005).[5]Lanlan Gu, Yongqiang Jiang, Wei Jiang, Xiaonan Chen, Ray T. Chen, “Silicon-on-insulator-based photonic-crystal Mach-Zehnder interferometers, ” Proceedings of SPIE, 6128, 261-268 (2006). [6]U. Fischer, T. Zinker, B. Schuppert and K. Petermann, “Singlemode optical switches based on SOI waveguides with large cross-section,” Electronics Letters , 30, 406 (1994). [7] Tao Chu, Hirohito Yamada, Satomi Ishida, and Yasuhiko Arakawa, “Thermooptic switch based on photonic-crystalline-defect waveguides,” IEEE. Photonic technology letters , 17, 2083 (2005).[8] R. A. Soref, B. R. Bennett, “Electrooptical effects in silicon,” IEEE J. Quantum Electron. QE-23, 123(1987).[9] Yongqiang Jiang, Wei Jian, Lanlan GU, Xiaonan Chen, Ray T. Chen, “80-micron interaction length silicon nano-photonic crystal waveguide modulator,” Applied Physics Letters , 87, 221105 (2005).[10] G.V. Treyz, P.G. May and J.M. Halbout, “Silicon Mach-Zehnder waveguide interferometers based on theplasma dispersion effect,” Appl. Phys. Lett ., 59, 771 (1991).Fig. 4 Microscope image of the top view of a p-i-n diode based photonic crystal silicon MZI.。
《Ultrafast Optics》(超快光学)评介
《Ultrafast Optics》(超快光学)评介朱晓农(南开大学现代光学研究所教授、博士生导师)《Ultrafast Optics》(超快光学)是美国普渡大学安德鲁M.维纳(Andrew M. Weiner)教授,2009年在John Wiley of Son Inc出版的经典教材。
《Ultrafast Optics》即“超快光学”是Wiley图书公司《理论和应用光学系列丛书》中的一本新的高水平专著。
该系列丛书至2009年为止已出版了47部,内容覆盖了光学、光学工程、光学技术、光子学、激光领域内的广泛专题。
其中包括顾德曼(Goodman)的“统计光学”(Statistical Optics), 欧·实亚(O·shea)的“现代光学设计概要”(Elements of Modern Optics Design), 沙勒与泰赫(Saleh and Teich)的“光子学基础”(Fundamentals of Photonics), 沈元壤(Shen)的“非线性光学原理”(The Principles of Nonlinear Optics), 亚里夫和叶(Yariv and Yeh)的“晶体中的光波”(Optical Waves in Crystals)等国际上广为流传的光学科学与技术方面的著名专著。
作者安德鲁M. 维纳是美国普渡大学电工与计算机工程系的冠名杰出教授。
维纳教授长期从事超快光学方面的研究并以超快光学信号处理,高速光通信,超宽带射频光子学为其主要研究方向。
维纳教授以其在飞秒光脉冲整形方面的开拓性研究工作而闻名于世。
由此他也获得了众多的奖项,维纳教授在超快光学研究领域发表了200多篇期刊文章和350多篇会议论文。
《Ultrafast Optics》是关于超快光学的一部综合性的专著。
它的出版填补了对超快现象和超短脉冲激光密切相关的专门光学知识和原理缺乏全面和深入论述的空白。
(完整版)超快光学第01章入门
Mode-locking and mode-locking techniispersion (GVD)
Compensating GVD with a pulse compressor
Continuum generation
Measuring ultrashort pulses
Second-harmonic-generation of infrared light yields this beautiful
display of intense green light.
Continuum generation
Continuum Generation: focusing a femtosecond pulse into a clear medium turns the pulse white.
Laser power
A generic ultrashort-pulse laser
A generic ultrafast laser has a broadband gain medium, a pulseshortening device, and two or more mirrors:
Pulse-shortening devices include: Saturable absorbers Phase modulators Dispersion compensators Optical-Kerr media
Irradiance vs. time
Spectrum
Long pulse
time Short pulse
frequency
time
frequency
Ultrafast laser media
高带外抑制特性微波陶瓷波导滤波器的设计
2021年4月Journal on Communications April 2021 第42卷第4期通信学报V ol.42No.4高带外抑制特性微波陶瓷波导滤波器的设计梁飞,蒙顺良,吕文中(华中科技大学光学与电子信息学院,湖北武汉 430074)摘 要:介绍了陶瓷波导滤波器的设计理论,采用耦合通槽分别与浅、深耦合盲孔的组合结构来满足正、负耦合带宽要求,通过调整3~6腔体的交叉耦合来改善滤波器传输曲线的对称性,同时实现滤波器近端和远端的带外抑制,在此基础上设计了一款5G基站用六腔陶瓷波导滤波器。
在该滤波器的优化过程中,详细讨论了3~6腔体交叉耦合通槽的相对位置偏移量和交叉耦合通槽的长度对滤波器传输零点位置、近端和远端带外抑制特性的影响,并给出了相关的变化规律。
经优化后滤波器性能指标如下:中心频率为3.5 GHz,工作带宽为200 MHz,插入损耗≤1.2 dB,回波损耗≥17 dB,近端带外抑制≥25 dB,远端带外抑制≥51 dB。
根据仿真模型结构参数制备得到的样品,其性能测试结果与仿真结果吻合良好。
关键词:陶瓷波导滤波器;负耦合结构;交叉耦合通槽;带外抑制中图分类号:TN713文献标识码:ADOI: 10.11959/j.issn.1000−436x.2021029Design of microwave ceramic waveguide filter withhigh out-of-band suppression characteristicsLIANG Fei, MENG Shunliang, LYU WenzhongSchool of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China Abstract: The design theory of ceramic waveguide filter was introduced, and then the combination structure of coupling through slot with shallow or deep coupling blind hole was designed, which could meet the requirements of positive and negative coupling bandwidth. By adjusting the cross coupling between 3~6 cavities, the symmetry of the filter transmis-sion curve was improved, and the near and far end band suppression of the filter was realized. Finally, a six-cavity ce-ramic waveguide filter for 5G base station was designed. In the process of optimizing the filter, the influences of the rela-tive position offset of the cross-coupling through slot and the length of the cross-coupling through slot on the transmis-sion zero position, the near end and far end out of band suppression characteristics of the filter were discussed in detail, and the relevant change rules were given. The performance indexes of the optimized filter were as follows, center fre-quency was 3.5 GHz, working bandwidth was 200 MHz, insertion loss ≤ 1.2 dB, return loss ≥ 17 dB, near end out of band rejection ≥ 25 dB, far end out of band rejection ≥ 51 dB. According to the structural parameters of the simulation model, the performance test results of the samples are in good agreement with the simulation results.Keywords: ceramic waveguide filter, negative coupling structure, cross-coupling through slot, out-of-band suppression1引言随着5G通信时代的来临,大规模天线技术和有限的频谱资源对微波器件的尺寸、工作性能等各项指标都提出了更高的要求。
英国QinetiQ有限公司提出用自适应编码孔径提高红外成像分辨率
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OPTICS EXPRESS
Long lifetime plasma channel in air generated by multiple femtosecond laser pulses and anexternal electrical fieldJiabin Zhu, Zhonggang Ji, Yunpei Deng, Jiansheng Liu, Ruxin Li, and Zhizhan Xu State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics (SIOM), ChineseAcademy of Sciences, Shanghai 201800, Chinajiabinzhu@Abstract: The lifetime of a plasma channel produced by self-guidingintense femtosecond laser pulses in air is largely prolonged by adding a highvoltage electrical field in the plasma and by introducing a series offemtosecond laser pulses. An optimal lifetime value is realized throughadjusting the delay among these laser pulses. The lifetime of a plasmachannel is greatly enhanced to 350 ns by using four sequential intense100fs(FWHM) laser pulses with an external electrical field of about350kV/m, which proves the feasibility of prolonging the lifetime of plasmaby adding an external electrical field and employing multiple laser pulses.© 2006 Optical Society of AmericaOCIS codes: (320.7120) ultrafast phenomena; (350.5400) plasmasReferences and links1. A. Braun, G. Korn, X. Liu, D. Du, J. Squier, and G. Mourou, “Self-channeling of high-peak-powerfemtosecond laser pulses in air,” Opt. Lett. 20, 73-75 (1995).2. E. T. J. Nibbering, P. F. Curley, G. Grillon, B. S. Prade, M. A. Franco, F. Salin, and A. Mysyrowicz,“Conical emission from self-guided femtosecond pulses in air,” Opt. Lett. 21, 62-64 (1996).3.Miguel Rodriguez, Riad Bourayou, Guillaume Méjean, Jérôme Kasparian, Jin Yu, Estelle Salmon,Alexander Scholz, Bringfried Stecklum, Jochen Eislöffel, Uwe Laux, Artie P. Hatzes, RolandSauerbrey, Ludger Wöste, and Jean-Pierre Wolf.“Kilometer-range nonlinear propagation offemtosecond laser pulses,” Phy. Rev. E 69, 036607 (2004).4.S. A. Hosseini, Q. Luo, B. Ferland, W. Liu, N. Akozbek, G. Roy, S.L. Chin, “Effective length of filamentsmeasurement using backscattered fluorescence from nitrogen molecules,” Appl. Phys. B 77, 697-702(2003).5.R. Ackermann, K. Stelmaszcyk, P. Rohwetter, G. Mejean, E. Salmon, J. Yu, J. Kasparian, G. Mechain,V.Bergmann, S. Schaper, B. Weise, T. Kumm, K.Rethmeier, W. Kalkner, L. Wöste, and J. P. Wolf,“Triggering and guiding of megavolt discharges by laser-induced filaments under rain conditions,”Appl.Phys. Lett. 85, 5781-5783 (2004).6. F. Vidal, D. Comtois, C.-Y. Chien, A. Desparois, B. La Fontaine, T. W. Johnston, J.-C. Kieffer, H. P.Mercure, and F. A. Rizk, “Modeling the triggering of streamers in air by ultrashort laser pulses,” IEEETrans. Plasma Sci. 28, 418–433 (2000).7.J. Kasparian, M. Rodriguez, G. Méjean, J. Yu, E. Salmon, H. Wille, R. Bourayou, S. Frey, Y.-B. André,A. Mysyrowicz, R. Sauerbrey, J.-P. Wolf, and L. Wöste, “White-Light Filaments for AtmosphericAnalysis,” Science 301, 61-64 (2003).8.H. Yang, J. Zhang, W. Yu, Y. J. Li, and Z. Y. Wei,“Long plasma channels generated by femtosecondlaser pulses,” Phys. Rev. E 65, 016406(2001).9.X. Lu, Xi Ting Ting, Li Ying-Jun, and Zhang Jie, “Lifetime of the plasma channel produced by ultra-shortand ultra-high power laser pulse in the air,” Acta Physica Sinica 53, 3404-3408 (2004).10.Hui Yang, Jie Zhang, Yingjun Li, Jun Zhang, Yutong Li, Zhenglin Chen, Hao Teng, Zhiyi Wei, andZhengming Sheng, “Characteristics of self-guided laser plasma channels generated by femtosecond laserpulses in air,” Phys. Rev. E 66, 016406(2002).11.X .M .Zhao, Jean-Claude Diels, Cai Yi Wang, and Juan M. Elizondo, “Femtosecond Ultraviolet LaserPulse Induced Lightning Discharges in Gases,” IEEE J. Quantum Electron. 31. 599-612(1995).12.M.A. Biondi, “Recombination,” in Principles of Laser Plasmas, G. Bekefi, ed. pp.125-157 (New York,Wiley, 1976)#68045 - $15.00 USD Received 17 February 2006; revised 9 May 2006; accepted 10 May 2006 (C) 2006 OSA29 May 2006 / Vol. 14, No. 11 / OPTICS EXPRESS 491513. Quanli Dong, Fei Yan, Jie Zhang, Zhan Jin, Hui Yang, Zuoqiang Hao, Zhenglin Chen, Yutong Li, ZhiyiWei, and Zhengming Sheng, “The measurement and analysis of the prolonged lifetime of the plasmachannel formed by short pulse laser in air,” Acta Physica Sinica 54, 3247-3250 (2005).14. Jiansheng Liu, Zuoliang Duan, Zhinan Zeng, Xinhua Xie, Yunpei Deng, Ruxin Li, and Zhizhan Xu,“Time-resolved investigation of low-density plasma channels produced by a kilohertz femtosecond laser inair,” Phys. Rev. E 72, 026412 (2005).The generation of light filaments in air has attracted broad interest [1-4] due to their applications for lightning protection [5-6] and atmospheric remote sensing [7]. The filaments remain stable over tens of meters or more, which is much longer than the beam’s Rayleigh distance [1-3]. This self-guiding effect has been attributed to a dynamic balance between beam self-focusing (owing to the optical Kerr effect) and defocusing (owing to medium ionization). A high degree of ionization as well as a long lifetime of light filaments is preferred in practical application. Recent research on the lifetime of light filaments reported that the lifetime of a light filament could be enhanced by bringing in a second long-pulse laser after a femtosecond laser pulse mainly due to the optical detachment effect [8-10]. The electron density owing to the optical detachment effect maintains itself at about 12313310~10cm cm −− [9]. We hope to further increase the degree of ionization during the total lifetime of a plasma channel.In our experiment, we applied a high voltage electrical field in the plasma channel induced by a femtosecond laser pulse in air. Results show that the lifetime of the plasma channel had been prolonged and also the degree of ionization increased. The lifetime of the plasma channel reaches about 60 ns with a field of about 350kV/m. We investigated the variation of the lifetime of the plasma channel with the increase in electric field. In addition, we brought in a second femtosecond laser pulse and found that the lifetime of the filament can reach 200 ns with a delay of 60 ns between the first and second pulse. Finally, the lifetime of plasma channel was enhanced to 350 ns by using four sequential laser pulses, which proves the feasibility of prolonging the lifetime of plasma by employing multiple laser pulses.The experiments were performed with a 10-Hz chirped-pulse amplification Ti-sapphire laser system. A plasma channel was produced by a 2-mJ, 100-fs chirped laser pulse at 790 nm with a focusing lens of f=50 cm. An electrical field which can be adjusted in a range of 0-350kV/m was applied along the plasma channel. The experimental arrangement is shown in Fig. 1. The configuration of the electrodes here for the high voltage is sharp-point. The distance between two electrodes is about 3 cm. The variation of the electrical signals in the channel indicates the decay of electron density. And Electron decay rate is directly related to the length of plasma’s life. Therefore, we measure the lifetime of the plasma channel by detecting voltage from probe c in the channel.Fig. 1. Experimental setup; Electrodes a, b, and probe c are set close to the path of the plasmachannel induced by femtosecond laser pulse.#68045 - $15.00 USD Received 17 February 2006; revised 9 May 2006; accepted 10 May 2006(C) 2006 OSA 29 May 2006 / Vol. 14, No. 11 / OPTICS EXPRESS 4916We have measured the electrical signals when the fields are 0, 250, and 350kV/m respectively. Meanwhile, through a longitudinal diffraction detection method [14], the initial electron density was estimated at about 17310cm −and the diameter of the plasma channel was about 100m μ. The visible length of the plasma channel was over 4 cm.As shown in Fig. 2(a), the decay time of the electrical signal (defined as the duration lasting from the maximum value to 5% of the maximum value), increased by about 3 folds when the electrical field increased to 350 kV/m (dash-dotted line c). As we expected, the variation of the electrical signals in the channel showed that the lifetime of the plasma channel was prolonged when the electrical field increased. On the other hand, the solid line in Fig. 2(b), resulting from a theoretical model, which will be discussed later based on Eq. (1)-(3), depicts the evolution of electron density in the absence of an electrical field. We calculated that within 20 ns the electron density would be expected to fall to 31410−cm . Here, the initial electron density in our calculation was of the same order magnitude as the measurement in our experiment (17310cm −). Therefore, we expected that within the same 20 ns the electron density in the plasma would remain above 31410−cm . We regard this level as an indication of the lifetime of a plasma channel. In Fig. 2(a), compared to line a, line b and c indicate increased lifetimes of 40 and 60 ns respectively. Our experiment results show that an electrical field added in the plasma channel can affect the characteristics of the plasma and prolong the lifetime of the plasma channel.#68045 - $15.00 USD Received 17 February 2006; revised 9 May 2006; accepted 10 May 2006(C) 2006 OSA 29 May 2006 / Vol. 14, No. 11 / OPTICS EXPRESS 4917Fig. 2. (a) Measured electrical signals (solid line a, dashed line b, and dash-dotted line ccorrespond to electrical fields of 0V/m, 250kV/m, 350kV/m respectively); (b) Theoreticalcalculation with initial condition that 173210e n cm −=×.In order to further extend the lifetime of the plasma channel, we added a second femtosecond laser pulse with the external electrical field still in place. The delay between the two laser pulses was adjusted and the corresponding lifetime of the plasma channel is measured as shown in Fig. 3 and Fig. 4. As we can see in Fig. 3, the lifetime is prolonged to about 150 ns when the delay between two pulses is 40 ns. With a delay of 60 ns, the lifetime increases to 200 ns. As shown in Fig. 4, further increase in delay (100 ns) no longer leads to further extension of the lifetime. This is because the distance between the two laser pulses is so long that the interaction between them is less pronounced than in situations with shorter delay time.#68045 - $15.00 USD Received 17 February 2006; revised 9 May 2006; accepted 10 May 2006(C) 2006 OSA 29 May 2006 / Vol. 14, No. 11 / OPTICS EXPRESS 4918A multi-pulse scheme is employed here to reach a longer lifetime. In our experiment, we added three more laser pulses to the original laser pulse with a delay between two consecutive pulses at about 70 ns. This was done to obtain an optimal effect on the lifetime. These multiple laser pulses were generated by passing a main laser pulse through beam splitters and setting long-range fixed delays. The electrical field remained at about 350kV/m. The energy of the original pulse was 0.4 mJ and those of the later three laser pulses are all about 0.1 mJ ±0.1 mJ due to long-range propagation. The measured electrical signal is shown in Fig. 5 with a total lifetime of about 350 ns. As we can see, the signal caused by subsequent pulses is not as intense as in the double-pulse experiments conducted. This is due to the relatively low energy of later pulses. According to our double-pulse experimental results, we can expect that with relatively high energy of each later pulse at about 0.4 mJ, the lifetime of the plasma channel can be increased longer than what we acquired in Fig. 5. Therefore, we can conclude that a multi-pulse scheme with an electrical field added is efficacious for the extension of the lifetime of the plasma channel.-0.010.000.010.020.030.040.050.06e l e c t r i c a l s i g n a l (a .u .)t(ns)Fig. 3. Electrical signals in double-pulse scheme. The energies of two pulses with the delay of20 ns are 0.5 mJ and 0.4 mJ respectively. The energies of two pulses with the delay of 40 ns arealso 0.5 mJ and 0.4 mJ respectively. #68045 - $15.00 USD Received 17 February 2006; revised 9 May 2006; accepted 10 May 2006(C) 2006 OSA 29 May 2006 / Vol. 14, No. 11 / OPTICS EXPRESS 4919Fig. 4. Electrical signals in double-pulse scheme. The energies of two pulses with the delay of60 ns are 0.5 mJ respectively. The energies of two pulses with the delay of 100 ns are 0.3 mJrespectively.Fig. 5. Electrical signal in four-pulse scheme. The energy of the first pulse is 0.4 mJ, and theenergies of later pulses are all about 0.1 mJ. The delay between two contiguous pulses is 70 ns.The main mechanisms involved in the decay process of the plasma channel in a highelectrical field include the photo-ionization, impact ionization, dissociative attachments of electrons to oxygen molecules, charged particle recombination, detachments of electrons byion-ion collision, and electron diffusion. Among these effects, the attachment of electrons to oxygen molecules is detrimental to the lifetime of the plasma channel. The effect of#68045 - $15.00 USD Received 17 February 2006; revised 9 May 2006; accepted 10 May 2006 (C) 2006 OSA29 May 2006 / Vol. 14, No. 11 / OPTICS EXPRESS 4920detachments of electrons caused by ion-ion collision is relatively weak compared with the others and thus is omitted in our analysis. And the electron diffusion is a slow process, on the time scale of tens of s μ[11]. And electron generation and plasma formation are on the time scale of ns to s μ. At this time scale, effects from electron diffusion can be neglected. Therefore, we can estimate the lifetime of the plasma channel following the equation of continuity as follows [10,11] p e ep e e e n n n n tn βηα−−=∂∂ (1) p n np p e ep e pn n n n n tn ββα−−=∂∂ (2) p n np e n n n n tn βη−=∂∂ (3) where e n , p n , n n are electron density, positive ion density, and negative ion density in air respectively. α is the impact ionization coefficient. ηis the attachment rate. Initial conditions for theoretical analysis is that 173210e n cm −=×, 173210p n cm −=×, 0n n =.Through our simulation, αand ηin different electric fields did not exert a noticeable effect on the lifetime of a plasma channel. Therefore, we expect that ep βand np βmay play a role in extending the lifetime when an external electrical field is added.Without considering the effect of external electric field, a general expression of electron-ion recombination coefficient ep βas a function of electron temperature Te is [11, 12]:3120.39123110.702212(/) 2.03510,()(/) 1.13810,()0.790.21ep m s Te e N m s Te e O βββββ−−−+−−−+=×−=×−=+ (4)We take np ep ββ= in our calculation since the ion-ion recombination coefficient np β is of the same order of magnitude as the electron-ion recombination coefficient ep β.The theoretical simulation of the lifetime of the plasma channel is shown in Fig. 6. As line a, b and c shown, the lifetime of the plasma channel is prolonged from 20 ns to 60 ns as the dissociative recombination coefficient ep βand np β decrease.Potential energy curves play a role in dissociative recombination. In a favorable potential curve crossing case, a sharper falloff in this coefficient than 0.39Te −and 0.70Te −will occur with increasing incident electron energy [12]. When the external electrical field is added along the plasma channel, the incident energy of electrons will be increased. Meanwhile, Te can be assumed to thermalize at the same ambient air temperature as the gas molecules [11]. Because potential energy curves will change due to the external electrical field, we expect that a favorable potential curve crossing may exist in this case. And this can lead to a quicker falloff in ep βand np β, and corresponding extension in the lifetime as electron energy increases, as we can see from the comparison of line a, b and c shown in Fig. 6.#68045 - $15.00 USDReceived 17 February 2006; revised 9 May 2006; accepted 10 May 2006(C) 2006 OSA 29 May 2006 / Vol. 14, No. 11 / OPTICS EXPRESS 4921Fig. 6. Theoretical simulation with 417.410s α−=× and 712.510s η−=× [11]; Solid line a,dashed line b and dash-dotted line c correspond to different dissociative recombinationrates 1332.210/m s −×, 1330.810/m s −× and 1330.310/m s −× respectively.Similarly, in double-pulse and multi-pulse case, the dissociative recombination rate can decline more intensively than the case without an external electrical field and this will thus lead to an extension of the lifetime of the plasma channel. Moreover, the addition of the second and later pulses will again cause a large number of electrons due to photo-ionization [13]. With these extra electrons, the lifetime of the plasma channel will further extend.As a conclusion, characteristics of the lifetime of the plasma channel are investigated by adding an external electrical field and also extra laser pulses. The lifetime increases by 3 folds when the external electrical field is about 350kV/m in our experiment. We expect that a favorable crossing case may exist when an external electrical field is in place, and this can lead to a corresponding growth in the lifetime of the plasma channel. In addition, the lifetime of plasma channel is greatly enhanced to 350 ns by using four sequential intense 100fs (FWHM) laser pulses with the external electrical field (350kV/m). Therefore, we conclude that a multi-pulse scheme with an external electrical field added is feasible for greatly prolonging the lifetime of a plasma channel. This research is supported by a Major Basic Research project of the Shanghai Commission of Science and Technology, the Chinese Academy of Sciences, the Chinese Ministry of Science and Technology, and the Natural Science Foundation of China. #68045 - $15.00 USD Received 17 February 2006; revised 9 May 2006; accepted 10 May 2006(C) 2006 OSA 29 May 2006 / Vol. 14, No. 11 / OPTICS EXPRESS 4922。
超快光学超快光谱
Semiconductor processes of technological interest are necessarily ultrafast or we wouldn’t be interested.
Da(t) = Da0 exp(–t /tex)
for t > 0
where t is the delay after excitation, and tex is the excited-state lifetime.
So the transmitted probe-beam intensity—and hence pulse energy and
Unexcited medium
Unexcited medium absorbs heavily at wavelengths corresponding to transitions from ground state.
Excited medium
Excited medium absorbs weakly at wavelengths corresponding to transitions from ground
Change in probebeam transmitted intensity or power
Excited molecules in state 2: stimulated emission of probe
Excited molecules in state 1:
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Ultrafast Optical Switches and Wavelength Division Multiplexing(WDM)Amplifiers Based on Bismuth Oxide GlassesNaoki Sugimoto *Research Center,Asahi Glass Co.,Ltd.,Yokohama 221-8755,JapanGlasses with a high refractive index exhibit interesting prop-erties.All optical switching and broadband amplification performances have been demonstrated using glasses based on bismuth oxide (Bi 2O 3).Optical Kerr shutter (OKS)switching and degenerated four-wave mixing experiments for nonresonant-type Bi 2O 3–B 2O 3–SiO 2glasses have been per-formed using femtosecond lasers.This glass exhibits an ultra-fast response (<150fs)in OKS operation.Moreover,terahertz-range (THz-range)optical switching has been suc-cessfully performed with this glass,using a 1.5-THz pulse train.Erbium-doped bismuth-based oxide glasses also have been prepared for wavelength division multiplexing (WDM)amplifiers.These glasses exhibit broadband emission and negligible concentration quenching,which indicates that the bismuth-based glass is suitable for broadband amplifiers and highly doped short-length fiber applications for metro use.I.IntroductionHEAVY -METALoxide glasses that contain Bi 2O 3,TeO 2,PbO,andGa 2O 3are well-known to exhibit a high refractive index.This feature is very important for advanced optical telecommunication and processing devices.Rapidly increasing internet and data traffic are stimulating the demand for greater information transmission capacity of backbone and “metro”optical networks.To meet the capacity demand,optical time division multiplexing (OTDM)and wavelength division multiplexing (WDM)have been proposed and used practically.In the OTDM system,the bit rate is planed to be 100Gbit/s to 1Tbit/s,which indicates that the time interval between pulses is 10–1ps.To process the high-speed optical signals,ultrafast (Ͻ1ps)all-optical switching is required.Third-order optical nonlinearities and their response time are the most-important properties for the realization of all-optical switching.Much research on glass composition has been performed to yield a large third-order optical susceptibility ((3))value,because glass that has a high refractive index exhibits a large (3)value.1–7We have prepared new,nonresonant-type glasses that contain a high concentration of Bi 2O 3,and we have shown that these glasses exhibit large (3)values and an ultrafast response.8,9On the other hand,optical Kerr shutter (OKS)switching with a response time of several picoseconds has been observed when a chalcogenide glass fiber was used.10However,more information on the response properties of optical switching in nonresonant-type glasses is needed for the realization of all-optical switching with response times of less than a picosecond.In addition,more information on the response properties and applied properties at telecommunica-tion wavelengths of 1.5m is needed.In this paper,we report on the femtosecond OKS operation and the first demonstration of terahertz-range (THz-range)switching using glass that contains a high concentration of Bi 2O 3.We also compare the ultrafast response property and the threshold to optical damage at a wavelength of 1.5m with a chalcogenide (As 2S 3)glass,using a degenerated four-wave mixing (DFWM)method.In the WDM system,an increasing channel count is required to increase the transmission capacity.To meet this capacity demand,the practical use of erbium-doped fiber amplifi-ers (EDFAs)has been the key technology for the massive development of WDM.Much effort has been exerted to broaden and flatten the EDFA bandwidth,to increase the capacity in the WDM system.Moreover,compact amplifiers such as erbium-doped planar waveguide amplifiers have been proposed to meet the low-spatial and low-cost demands for metro use.We have prepared novel erbium-doped Bi 2O 3-based glasses that exhibit broadband emission and negligible concentration quenching up to an erbium concentration of 26000ppm.11,12In this paper,we report on the broadband and short-length amplification properties of Bi 2O 3-based erbium-doped fiber (Bi-EDF).II.Ultrafast Switching(1)Experimental ProcedureThe glass,which had a composition of 63.3Bi 2O 3–32.6B 2O 3–4.1SiO 2–0.24CeO 2(based on molar ratio),was prepared using a melting method.13The concentration of Bi 2O 3in this glass corre-sponds to 92wt%.Reagent-grade Bi 2O 3,SiO 2,B 2O 3,and CeO 2were used as the raw materials.The raw materials were mixed together and melted in a platinum crucible in a SiC furnace in air at 1150°C for 1h.Then,the melt was poured onto a stainless-steel plate and annealed.The obtained glass plate was polished to a thickness of 0.7mm for OKS and DFWM measurements.OKS measurements were performed at a wavelength of 810nm in the noncolinear configuration,using 150-fs laser pulses that were derived from a regenerated amplified Ti:sapphire laser that was operating at a frequency of 200kHz.The experimental setup is shown in Fig.1.The output beam of the laser was split into two partial beams:one was used as a gate beam,and the other was used as a probe beam.The two beams were focused onto the same spot,using a lens with a focal length of 160mm,which led to a focal diameter of ϳ100m and a interaction length of ϳ1mm.The power intensity of the gate beam was maintained at a value that was a factor of Ͼ20greater than that of the probe beam.The sample was positioned between a polarizer and an analyzer in a cross-Nicol configuration.The gate power density was varied over a range of 3–80GW/cm 2.The transmitted beam (i.e.,the OKS signal)was detected by a photomultiplier.A time delay was inserted into the probe beam,with respect to the gate beam,to measure the response time of the OKS switching.CS 2in a quartz cuvette with a thickness of 1mm was used as a reference.DFWM measurements were performed at a wavelength of 1.5m in the boxcar configuration,using 150-fs laser pulses derived from an optical parametric oscillator pumped by regenerated amplified Ti:sapphire laser that was operating at a frequency of 1kHz.The experimental setup is shown in Fig.2.The pump power R.K.Brow—contributing editorManuscript No.187865.Received March 12,2001;approved March 25,2002.Presented at the Fall Meeting of the Glass and Optical Materials Division,Oct.1–4,2000,Corning,NY.*Member,American Ceramic Society.Glass and Optical MaterialsJ.Am.Ceram.Soc.,85[5]1083–88(2002)1083density was varied over a range of 30–200GW/cm 2.The dif-fracted beam (i.e.,the DFWM signal)was detected by a photo-diode.A time delay was inserted into the probe beam,with respect to the two pump beams,to measure the (3)response time of the third-order optical nonlinearity.As 2S 3glass with a thickness of 1mm was used as a reference.(2)Results and DiscussionIn the OKS measurement,the probe transmittance T for the OKS can be written as a function of the angle B between the gate and the probe beam;that is,T ϭsin 2͑2B ͒(1)The experimental value of T changed according to the polarization dependence between the gate and the probe beams,as given in Eq.(1).If the thermal effect were the cause of the switching operation,T would not exhibit such a dependence on B .When the value of T is sufficiently small,the probe transmit-tance can be written asT ϰn 2͑OKS ͒2I g 2L2(2)where n 2(OKS)is the OKS nonlinear refractive index,I g the gate power intensity,and L the sample length.The experimental probe transmittance T increased in proportion to I g 2.These observed results of polarization dependence and the gate power dependence indicate that the switching operation using Bi 2O 3glass is driven by the optical Kerr effect that originates from third-order optical nonlinearity.Figure 3shows the decay property of the OKS signal in Bi 2O 3glass and CS 2with a gate power density of 40GW/cm 2.The CS 2reference material had a decay component of ϳ1ps,whose origin is molecular orientation relaxation.14On the other hand,the OKS signals in Bi 2O 3glass were detected only when the probe beam overlapped the gate beam.Hence,the response time of the OKS operation in Bi 2O 3glass was considered to be Ͻ150fs.We observed no damage in the sample,even at a gate power density of 85GW/cm 2,nor was any slow-decay component detected.This finding leads to the conclusions that the thermal effect or the slow process that originated from the two-photon absorption did not occur,even under such high gate power densities;in addition,one can conclude that this glass has a high damage threshold.Moreover,we have demonstrated OKS switching at a THz-range repetition rate for the first time,using a 1.5-THz pulse train as the gate beam.15The THz-range pulse train was synthesized with 150-fs laser pulses derived from an optical parametric oscillator that was pumped by a regenerated ampli-fied Ti:sapphire laser operating at a frequency of 1kHz and a wavelength of 633nm,via a pulse shaping technique that used gratings and a liquid-crystal phase modulator.16The interval of the gate pulses was ϳ670fs.The experimental setup for the OKS measurement was the same scheme as that shown in Fig.1,except for the laser system and the pulse synthesizer.The gate power density of the maximum pulse was estimated to be 20GW/cm 2,and the probe transmittance of the Bi 2O 3glasswasFig.1.Experimental setup for optical Kerr shutter (OKS)measurement using a femtosecond laser system.Inset describes the angle B between the polarization vector of the probe and the gatebeams.Fig.2.Experimental setup for degenerated four-wave mixing measure-ment at a wavelength of 1.5m.Fig.3.Decay properties of optical Kerr shutter (OKS)signals in Bi 2O 3glass and the CS 2reference material.1084Journal of the American Ceramic Society—Sugimoto Vol.85,No.5ϳ1%.The OKS signals in the CS 2reference material over-lapped each other,because of the slow-decay component.Therefore,we could not separate the individual pulses,as shown in Fig.4.However,Fig.4also shows that the OKS signals in Bi 2O 3glass could be completely separated from each other,which indicates that high-speed switching in the THz range can be realized using Bi 2O 3glass.Figure 5shows the pump power dependence of the DFWM signal intensity in As 2S 3and Bi 2O 3glasses on the DFWM measurements at a wavelength of 1.5m.The DFWM signal intensity of As 2S 3and Bi 2O 3glasses varied in proportion to the cube of pump power density.These results indicate that the DFWM signals are generated by third-order optical nonlinearity in both glasses.The DFWM signal intensity of Bi 2O 3glass varied in proportion to the cube of the pump power density,from 30GW/cm 2to 200GW/cm 2;on the other hand,the DFWM signal intensity of As 2S 3glass was saturated when the pump power density was Ͼ80GW/cm 2.These results indicate that As 2S 3glass was optically damaged at pump power densities of Ͼ80GW/cm 2.Although the absorption edges of these glasses are almost the same,the optical damage threshold of Bi 2O 3glass is higher than that of As 2S 3glass at a wavelength of 1.5m.The glass-transition temperature of Bi 2O 3glass is 345°C,and that of As 2S 3glass is 200°C.17The thermal stability of Bi 2O 3glass is greater than that of As 2S 3glass;this is the one of the reasons why the damage threshold of Bi 2O 3glass is higher than that of As 2S 3glass.The decay properties of As 2S 3and Bi 2O 3glasses at various pump power densities are shown in Figs.6and 7.DFWM signals in As 2S 3glass were detected only when the probe beam over-lapped the pump beams at 30and 80GW/cm 2.Hence,the response time of the third-order optical nonlinearity in As 2S 3glass was considered to be Ͻ150fs.At pump power densities of 140and 190GW/cm 2,however,a slow-decay component was detected at the tail of the decay curves.As described previously,As 2S 3glass was optically damaged at pump power densities of Ͼ80GW/cm 2.Therefore,this slow-decay component is related to the origin of optical damage.We believe that multiphoton absorption caused a slow-decay process and thermal damage in glass under high pump power density.On the other hand,DFWM signals in Bi 2O 3glass were detected only when the probe beam overlapped pump beams at pump power densities of 30–190GW/cm 2.Even with a pump power density of 190GW/cm 2,we observed no damage in the samples,and no slow-decay component was detected either.This finding leads to the theory that no thermal effect or slow process that originates from the multiphoton absorption occurs,even under such a high pump power density,and that this glass has a high damage threshold at a wavelength of 1.5m.Fig.4.Transmitted probe signals in Bi 2O 3glass and CS 2when the probe beam has been delayed against the gate beam to measure the response time of the OKSswitching.Fig.5.Pump-power dependence of DFWM signal intensity at a wave-length of 1.5m in (a)Bi 2O 3glass (t ϭ0.7mm)and (b)As 2S 3glass (t ϭ1mm).May 2002Ultrafast Optical Switches and WDM Amplifiers Based on Bi 2O 3Glasses1085III.Erbium-Doped Bi 2O 3Glass(1)Experimental ProcedureErbium-doped Bi 2O 3-based glasses were prepared using the same melting method that was mentioned in the former section.We fabricated single-mode Bi-EDF with a plastic coating.The erbium concentration was 6500ppm in this fiber.The refractive index of the core glass was 2.03,and the numerical aperture (NA)was 0.2at 1550nm.The propagation loss of 2dB/m was estimated at 1300nm,using the cut-back method.The Bi-EDF was pumped using a 975-nm laser diode.A tunable laser diode (1525–1625nm)was used as the signal source.Pump and signal beams were coupled with a 980/1550fiber coupler.We used pump lasers with powers of 150and 100mW and applied bidirectional pumping at high power pumping.Type FC connectors with physical contact (FC/PCs)were used to connect the Bi-EDF to 6/125m SiO 2fibers.The insertion loss of the Bi-EDF using this connection was estimated to be 5dB at 1625nm.(2)Results and DiscussionsFigure 8shows the gain profile of a 22-cm-long Bi-EDFwithFig.6.Decay properties of the DFWM signal in As 2S 3glass at various pump power densities ((a)30,(b)80,(c)140,and (d)190GW/cm 2).Fig.7.Decay properties of the DFWM signal in Bi 2O 3glass at various pump power densities ((a)30,(b)80,(c)140,and (d)190GW/cm 2).Fig.8.Gain bandwidth of 22-cm-long Bi-EDF with different signal powers ((a)Ϫ32.7,(b)Ϫ2.7,and (c)3.3dBm).1086Journal of the American Ceramic Society —Sugimoto Vol.85,No.5different signal powers.The applied pump power was 239mW.We can obtain high gain (Ͼ20dB)in the C-band region with a low input signal power of Ϫ32.7dBm;we also can obtain a gain of Ͼ9dB,even in the L-band region,using only 22-cm-long fiber.The gain profile became flat at an input signal power of 3.3dBm,and we can obtain gain flatness within 2dB at wavelengths of 1530–1610nm without a gain equalizer.These results indicate that the Bi-EDF exhibits broadband amplifying performance with very short length fiber.This performance reflects the bulk property of Bi 2O 3glass,which shows broadband emission and negligible concentration quenching.Figure 9shows the net-gain property of the 22-cm-long Bi-EDF at a wavelength of 1560nm.The input signal power was Ϫ32.7dBm.A net gain of 18dB was achieved,using an input pump power of 130mW.The internal gain of this fiber was estimated to be 23dB,because the insertion loss of Bi-EDF in this experiment was 5dB.Figure 10shows the measured pump-to-signal power conversion at 1560nm,using an input signal power of Ϫ2.6dBm.The power conversion efficiency for pumping at a wavelength of 975nm was estimated to be 15%.Figure 11shows the gain saturation characteristics at wave-lengths of 1525,1540,1560,1580,1600,and 1620nm.The saturation output power (3dB)at 1560nm is 10dBm,and the maximum saturation output power of each wavelength is estimated to be ϳ13dBm.This result is consistent with the results shown in Fig.8.These results indicate a broadband and flat amplifier can be achieved under saturating conditions using only 22-cm-long Bi-EDF.Er ions can be doped up to a level of 26000ppm without quenching,which means that much-shorter Bi-EDF can be avail-able with sufficient gain performances.Moreover,we have found that the Bi-EDF can be spliced with SiO 2fiber,using a conven-tional fusion splicer.The water durability of Bi 2O 3-based glass was evaluated by measuring the weight loss in water at 90°C for 20h.The mechanical properties of Bi 2O 3-based glass were evaluated using the Vickers indentation method.We compared these properties with tellurite glass (Na 2O –ZnO –TeO 2)and fluoride glass (ZBLAN).The water durability of Bi 2O 3-based glass was a factor of 1000better than that of fluoride glass and a factor of 2better than that of tellurite glass.The Vickers hardness (H v )of Bi 2O 3-based glass was 430,which was higher than that of tellurite glass (H v ϭ260)and fluoride glass (H v ϭ240).The crack-initiation load that was evaluated using the indentation method for Bi 2O 3-based glass was a factor of 3greater than those for tellurite and fluoride glasses.These results indicate the Bi 2O 3-based glass has practical potential as a host material of optical amplifiers.IV.ConclusionsWe have used a melting method to prepare nonresonant-type Bi 2O 3–B 2O 3–SiO 2glass that contained a high concentration of Bi 2O 3,and we have performed ultrafast optical switching opera-tions.Optical Kerr shutter (OKS)switching has been operated with a response time of Ͻ150fs,and terahertz-range (THz-range)optical switching has been successfully performed using a 1.5-THz pulse train as the gate beam.This glass also has exhibited an ultrafast response and a high threshold for optical damage at the communication wavelength of 1.5m.These results indicate that high-speed switching beyond the THz range can be realized using Bi 2O 3glass.-gain property of 22-cm-long Bi-EDF at a wavelength of 1560nm;the input signal power was Ϫ32.7dBm.Fig.10.Relationship between pump power and output power at 1560nm,using 22-cm-long Bi-EDF with an input signal power of Ϫ2.6dBm.Fig.11.Gain-saturation characteristics of 22-cm-long Bi-EDF at wavelengths of 1525–1620nm,with a pumping power of 239mW.May 2002Ultrafast Optical Switches and WDM Amplifiers Based on Bi 2O 3Glasses1087We have also fabricated Bi2O3-based erbium-doped fiber(Bi-EDF)with an erbium concentration of6500ppm and evaluated the amplifying performance.A net gain of18dB was achieved at1560 nm using only22-cm-long Bi-EDF,and we also can obtain a gain ofϾ9dB in the CϩL band using this fiber.The maximum saturation output power at wavelengths of1530–1610nm was estimated to beϳ13dBm.We believe that Bi-EDF is suitable for the advanced broadband and compact amplifiers that are strongly required in metro wavelength division multiplexing(WDM)net-work systems.AcknowledgmentsThe study of ultrafast optical switching was the result of a collaboration with Hirao Active Glass Project,Science and Technology Corporation,Japan,and the study of the optical properties of Er ions in glasses was the result of a collaboration with Prof.Hanada and Prof.Tanabe at 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