BFG403W,115;中文规格书,Datasheet资料
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2 1
MSB842
BFG403W
PINNING PIN 1 2 3 4 emitter base emitter collector DESCRIPTION
handbook, halfpage
3
4
DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.
DC current gain as a function of collector current; typical values.
Fig.4
Feedback capacitance as a function of collector-base voltage; typical values.
handbook, halfpage
BFG403W
MAX. 10 4.5 1 3.6 16 +150 150 V V V
UNIT
mA mW C C
UNIT K/W
handbook, halfpage
20
MGD957
Ptot (mW)
10
0 0 40 80 120 Ts (°C) 160
Fig.2 Power derating curve.
1998 Mar 11
4
http://oneic.com/
NXP Semiconductors
Product specification
NPN 17 GHz wideband transistor
BFG403W
handbook, halfpage
120
MGG678
handbook, halfpage
BFG403W
TYP. 80 170 315 20 17 20 22 5 14 1 1.6 5 6
MAX. 15 120
UNIT V V V nA fF fF fF GHz dB dB dB dB dB dB dBm dBm
collector-emitter breakdown voltage IC = 1 mA; IB = 0
IC = 0.5 mA; VCE = 1 V; f = 900 MHz; Tamb = 25 C; see Figs 6 and 8 IC = 3 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C; see Figs 7 and 8
F
noise figure
IC = 1 mA; VCE = 2 V; f = 900 MHz; S = opt; see Fig.13 IC = 1 mA; VCE = 2 V; f = 2 GHz; S = opt; see Fig.13
PL1 ITO Notes
output power at 1 dB gain compression third order intercept point
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG403W NPN 17 GHz wideband transistor
Product specification Supersedes data of 1997 Oct 29 1998 Mar 11
http://oneic.com/
Top view
Marking code: P3.
Fig.1 Simplified outline SOT343R.
QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Cre fT Gmax F PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum power gain noise figure Ts 140 C IC = 3 mA; VCE = 2 V; Tj = 25 C IC = 0; VCB = 2 V; f = 1 MHz open emitter open base CONDITIONS MIN. 50 TYP. 3 80 20 17 22 1 MAX. 10 4.5 3.6 16 120 fF GHz dB dB UNIT V V mA mW
1998 Mar 11
5
http://oneic.com/
NXP Semiconductors
Product specification
NPN 17 GHz wideband transistor
Fig.5
Transition frequency as a function of collector current; typical values.
Fig.6
Maximum stable gain as a function of collector current; typical values.
S 21
2
insertion power gain
IC = 0.5 mA; VCE = 1 V; f = 900 MHz; Tamb = 25 C; see Fig.8 IC = 3 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C; see Fig.8
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling.
1998 Mar 11
2
http://oneic.com/
NXP Semiconductors
Product specification
NPN 17 GHz wideband transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the emitter pins. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point VALUE 820 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature Ts 140 C; note 1; see Fig.2 open base open collector CONDITIONS open emitter 65 MIN.
hFE
ቤተ መጻሕፍቲ ባይዱ
50 Cre (fF) 40
MGG679
80
(1) (2) (3)
30
20 40 10
0 0
(1) VCE = 3 V. (2) VCE = 2 V. (3) VCE = 1 V.
0 2 4 IC (mA) 6 0 1 2 3 4 5 VCB (V)
IC = 0; f = 1 MHz.
Fig.3
1998 Mar 11
3
http://oneic.com/
NXP Semiconductors
Product specification
NPN 17 GHz wideband transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE Cc Ce Cre fT Gmax PARAMETER collector-base breakdown voltage emitter-base breakdown voltage collector-base leakage current DC current gain collector capacitance emitter capacitance feedback capacitance transition frequency maximum power gain; note 1 CONDITIONS IC = 2.5 A; IE = 0 IE = 2.5 A; IC = 0 IE = 0; VCB = 4.5 V IC = 3 mA; VCE = 2 V; see Fig.3 IE = ie = 0; VCB = 2 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 0; VCB = 2 V; f = 1 MHz; see Fig.4 IC = 3 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C; see Fig.5 MIN. 10 4.5 1 50
IC = 3 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C IC = 3 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C IC = 1 mA; VCE = 2 V; f = 900 MHz; S = opt CAUTION
NXP Semiconductors
Product specification
NPN 17 GHz wideband transistor
FEATURES Low current Very high power gain Low noise figure High transition frequency Very low feedback capacitance. APPLICATIONS Pager front ends RF front end Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.) Radar detectors.
20 fT (GHz) 16
MGG680
handbook, halfpage
30
MGG709
MSG (dB) 20
12
8 10 4
0 1 IC (mA) 10
0 0 2 4 IC (mA) 6
VCE = 2 V; f = 2 GHz; Tamb = 25 C.
VCE = 2 V; f = 900 MHz.
IC = 1 mA; VCE = 1 V; f = 900 MHz; ZS = ZS opt; ZL = ZL opt; note 2 IC = 1 mA; VCE = 1 V; f = 900 MHz; ZS = ZS opt; ZL = ZL opt; note 2
1. Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG; see Figs 6, 7 and 8. 2. ZS is optimized for noise; ZL is optimized for gain.
MSB842
BFG403W
PINNING PIN 1 2 3 4 emitter base emitter collector DESCRIPTION
handbook, halfpage
3
4
DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.
DC current gain as a function of collector current; typical values.
Fig.4
Feedback capacitance as a function of collector-base voltage; typical values.
handbook, halfpage
BFG403W
MAX. 10 4.5 1 3.6 16 +150 150 V V V
UNIT
mA mW C C
UNIT K/W
handbook, halfpage
20
MGD957
Ptot (mW)
10
0 0 40 80 120 Ts (°C) 160
Fig.2 Power derating curve.
1998 Mar 11
4
http://oneic.com/
NXP Semiconductors
Product specification
NPN 17 GHz wideband transistor
BFG403W
handbook, halfpage
120
MGG678
handbook, halfpage
BFG403W
TYP. 80 170 315 20 17 20 22 5 14 1 1.6 5 6
MAX. 15 120
UNIT V V V nA fF fF fF GHz dB dB dB dB dB dB dBm dBm
collector-emitter breakdown voltage IC = 1 mA; IB = 0
IC = 0.5 mA; VCE = 1 V; f = 900 MHz; Tamb = 25 C; see Figs 6 and 8 IC = 3 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C; see Figs 7 and 8
F
noise figure
IC = 1 mA; VCE = 2 V; f = 900 MHz; S = opt; see Fig.13 IC = 1 mA; VCE = 2 V; f = 2 GHz; S = opt; see Fig.13
PL1 ITO Notes
output power at 1 dB gain compression third order intercept point
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG403W NPN 17 GHz wideband transistor
Product specification Supersedes data of 1997 Oct 29 1998 Mar 11
http://oneic.com/
Top view
Marking code: P3.
Fig.1 Simplified outline SOT343R.
QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Cre fT Gmax F PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum power gain noise figure Ts 140 C IC = 3 mA; VCE = 2 V; Tj = 25 C IC = 0; VCB = 2 V; f = 1 MHz open emitter open base CONDITIONS MIN. 50 TYP. 3 80 20 17 22 1 MAX. 10 4.5 3.6 16 120 fF GHz dB dB UNIT V V mA mW
1998 Mar 11
5
http://oneic.com/
NXP Semiconductors
Product specification
NPN 17 GHz wideband transistor
Fig.5
Transition frequency as a function of collector current; typical values.
Fig.6
Maximum stable gain as a function of collector current; typical values.
S 21
2
insertion power gain
IC = 0.5 mA; VCE = 1 V; f = 900 MHz; Tamb = 25 C; see Fig.8 IC = 3 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C; see Fig.8
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling.
1998 Mar 11
2
http://oneic.com/
NXP Semiconductors
Product specification
NPN 17 GHz wideband transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the emitter pins. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point VALUE 820 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature Ts 140 C; note 1; see Fig.2 open base open collector CONDITIONS open emitter 65 MIN.
hFE
ቤተ መጻሕፍቲ ባይዱ
50 Cre (fF) 40
MGG679
80
(1) (2) (3)
30
20 40 10
0 0
(1) VCE = 3 V. (2) VCE = 2 V. (3) VCE = 1 V.
0 2 4 IC (mA) 6 0 1 2 3 4 5 VCB (V)
IC = 0; f = 1 MHz.
Fig.3
1998 Mar 11
3
http://oneic.com/
NXP Semiconductors
Product specification
NPN 17 GHz wideband transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE Cc Ce Cre fT Gmax PARAMETER collector-base breakdown voltage emitter-base breakdown voltage collector-base leakage current DC current gain collector capacitance emitter capacitance feedback capacitance transition frequency maximum power gain; note 1 CONDITIONS IC = 2.5 A; IE = 0 IE = 2.5 A; IC = 0 IE = 0; VCB = 4.5 V IC = 3 mA; VCE = 2 V; see Fig.3 IE = ie = 0; VCB = 2 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 0; VCB = 2 V; f = 1 MHz; see Fig.4 IC = 3 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C; see Fig.5 MIN. 10 4.5 1 50
IC = 3 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C IC = 3 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C IC = 1 mA; VCE = 2 V; f = 900 MHz; S = opt CAUTION
NXP Semiconductors
Product specification
NPN 17 GHz wideband transistor
FEATURES Low current Very high power gain Low noise figure High transition frequency Very low feedback capacitance. APPLICATIONS Pager front ends RF front end Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.) Radar detectors.
20 fT (GHz) 16
MGG680
handbook, halfpage
30
MGG709
MSG (dB) 20
12
8 10 4
0 1 IC (mA) 10
0 0 2 4 IC (mA) 6
VCE = 2 V; f = 2 GHz; Tamb = 25 C.
VCE = 2 V; f = 900 MHz.
IC = 1 mA; VCE = 1 V; f = 900 MHz; ZS = ZS opt; ZL = ZL opt; note 2 IC = 1 mA; VCE = 1 V; f = 900 MHz; ZS = ZS opt; ZL = ZL opt; note 2
1. Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG; see Figs 6, 7 and 8. 2. ZS is optimized for noise; ZL is optimized for gain.