DG2018中文资料

IN1, IN2NO4COM2NO2NC3IN3, IN4NC1COM4NC2GNDNO3COM3COM1NO1V+NC4Top ViewDG2018DN QFN-16 (3 X 3)Low Voltage, Dual DPDT and Quad SPDT Analog SwitchesFEATURESD Low Voltage Operation (1.8 V to 5.5 V)D Low On Resistance– r DS(on) : 6 W @ 2.7 V D Low Voltage Logic Compatible– DG2019: V INH = 1 V D High Bandwidth: 150 MHz D QFN-16 PackageBENEFITSD Ideal for Both Analog and Digital Signal SwitchingD Reduced Power Consumption D High AccuracyD Reduced PCB Space D Fast Switching D Low LeakageAPPLICATIONSD Cellular PhonesD Audio and Video Signal Routing D PCMCIA CardsD Battery Operated Systems DPortable InstrumentationDESCRIPTIONThe DG2018 and DG2019 are low voltage, single supply analog switches. The DG2018 is a dual double-pole/double-throw (DPDT) with two control inputs that each controls a pair of single-pole/double-throw (SPDT). The DG2019 uses one control pin to operate four independent SPDT switches.When operated on a +3-V supply, the DG2018’s control pins are compatible with 1.8-V digital logic. The DG2019 has an available feature of a V L pin that allows a 1.0-V threshold for the control pin when V L is powered with 1.5 V.Built on Vishay Siliconix’s low voltage submicron CMOS process, the DG2018 and DG2019 are ideal for highperformance switching of analog signals; providing low on-resistance (6 W @ +2.7 V), fast speed (T on , T off @ 42 ns and 16 ns), and a bandwidth that exceeds 150 MHz.The DG2018 and DG2019 were designed to offer solutions that extend beyond audio/video functions, to providing the performance required for today’s demanding mixed-signal switching in portable applications.An epitaxial layer prevents latch-up. Brake-before-make is guaranteed for all SPDT’s. All switches conduct equally well in both directions when on, and blocks up to the power supply level when off.FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATIONTRUTH TABLEIN1, IN2LogicNC1 and NC2NO1 and NO20ON OFF 1OFFONIN3, IN4LogicNC3 and NC4NO3 and NO40ON OFF 1OFFONORDERING INFORMATIONTemp RangePackagePart Number-40 to 85°CQFN-16 (3 x 3 mm)DG2018DNIN NO4COM2NO2NC3V L NC1COM4NC2GNDNO3COM3COM1NO1V+NC4Top ViewDG2019DN QFN-16 (3 X 3)FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATIONTRUTH TABLELogicNC1, 2, 3, and 4NO1, 2, 3, and 4ON OFF 1OFFONORDERING INFORMATIONTemp RangePackagePart Number-40 to 85°CQFN-16 (3 x 3 mm)DG2019DNABSOLUTE MAXIMUM RATINGSReference to GNDV+-0.3 to +6 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IN, COM, NC, NO -0.3 to (V+ + 0.3 V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous Current (Any terminal) "50 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . Peak Current "100 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (Pulsed at 1 ms, 10% duty cycle)Storage Temperature (D Suffix)-65 to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . Power Dissipation (Packages)bQFN-16 (3 x 3 mm)c 850 mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Notes:a.Signals on NC, NO, or COM or IN exceeding V+ will be clamped by inter-nal diodes. Limit forward diode current to maximum current ratings.b.All leads welded or soldered to PC Board.c.Derate 4.0 mW/_C above 70_CSPECIFICATIONS (V+ = 3 V)Test ConditionsOtherwise Unless SpecifiedLimits−40 to 85_CParameterSymbolV+ = 3 V, "10%(DG2018 Only) V IN = 0.5 or 1.4 V e(DG2019 Only) V L = 1.5 V, V IN = 0.4 or 1.0 V eTemp aMin b Typ c Max bUnitAnalog SwitchAnalog Signal Range d V NO , V NC ,V COMFullV+VOn-Resistance r ON V+ = 2.7 V, V COM = 0.2 V/1.5 VI NO , I NC = 10 mA RoomFull 61215r ON Flatnessr ON Flatness V+ = 2.7 V= 0 to V+ I I Room 0.52Wr ON Match Between Channels D r ON V COM = 0 to V+, I NO , I NC = 10 mARoom 0.63I NO(off),I NC(off)V+ = 3.3 V, V Room Full −1−100.3110Switch Off Leakage CurrentI COM(off)NO , V NC =0.3 V/3 VV COM = 3 V/ 0.3 V Room Full −1−100.3110nAChannel-On Leakage CurrentI COM(on)V+ = 3.3 V, V NO , V NC = V COM = 0.3 V/ 3 VRoom Full−11.00.3110Digital ControlDG2018Full 1.4Input High Voltage V INHV L = 1.5 V DG2019Full 1.0DG2018Full 0.5VInput Low Voltage V INLV L = 1.5 VDG2019Full 0.4Input Capacitance C inf = 1 MHz Full 9pF Input CurrentI INL or I INHV IN = 0 or V+Full−11m A Dynamic CharacteristicsTurn-On Time t ON= 20 V R W C RoomFull 425565Turn-Off Timet OFF V NO or V NC = 2.0 V, R L = 300 , C L = 35 pFRoom Full 162535nsBreak-Before-Make Time t d V NO or V NC = 2.0 V, R L = 50 W , C L = 35 pFFull 1Charge Injection d Q INJ C L = 1 nF, V GEN = 0 V, R GEN = 0 W Room −1.46pC Off-Isolation d OIRR C = 5 pF f = 1 MHzRoom −54Crosstalk dX TALK R L = 50 W , C L = 5 pF, f = 1 MHz Room −53dBN C NO(off)Room 9N O , N C Off Capacitance d C NC(off) = 0 or V+ f = 1 MHzRoom 9Channel On Capacitance C NO(on)V IN = 0 or V+, f = 1 MHz Room 30pF Channel-On Capacitance dC NC(on)Room30Power SupplyPower Supply Current I+V IN = 0 or V+Full0.011.0m ANotes:a.Room = 25°C, Full = as determined by the operating suffix.b.Typical values are for design aid only, not guaranteed nor subject to production testing.c.The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.d.Guarantee by design, nor subjected to production test.e.V IN = input voltage to perform proper function.SPECIFICATIONS (V+ = 5 V)Test ConditionsOtherwise Unless SpecifiedLimits−40 to 85_CParameterSymbolV+ = 5 V, "10%,(DG2018 Only) V IN = 0.8 or 1.8 V e(DG2019 Only) V L = 1.5 V, V IN = 0.4 or 1.0 V eTemp aMin b Typ c Max bUnitAnalog SwitchAnalog Signal Range d V NO , V NC ,V COMFullV+VOn-Resistance r ON V+ = 4.5 V, V COM = 3 V, I NO , I NC = 10 mARoomFull 4810r ON Flatnessr ON Flatness V+ = 4.5 V= 0 to V+ I I Room 0.6 1.2Wr ON Match Between ChannelsD r ON V COM = 0 to V+, I NO , I NC = 10 mARoom 0.61.2Switch Off Leakage Current I NO(off),I NC(off)Room Full −1−100.03110fI COM(off)V+ = 5.5 VV NO , V NC = 1 V/4.5 V, V COM = 4.5 V/1 VRoom Full −1−100.03110nAChannel-On Leakage Current fI COM(on)V+ = 5.5 V, V NO , V NC = V COM = 1 V/4.5 VRoom Full−1−100.03110Digital ControlDG2018Full 1.8Input High Voltage V INHV L = 1.5 V DG2019Full 1.0DG2018Full 0.8VInput Low Voltage V INLV L = 1.5 VDG2019Full 0.4Input Capacitance C inFull 9pF Input CurrentI INL or I INHV IN = 0 or V+Full11m A Dynamic CharacteristicsTurn-On Time t ON= 3 V R C RoomFull 444852Turn-Off Timet OFF V NO or V NC = 3 V, R L = 300 W , C L = 35 pFRoom Full 193335nsBreak-Before-Make Time t d V NO or V NC = 3 V, R L = 50 W , C L = 35 pF Full 1Charge Injection d Q INJ C L = 1 nF, V GEN = 0 V, R GEN = 0 W Room −2.46pC Off-Isolation d OIRR C = 5 pF f = 1 MHzRoom −54Crosstalk dX TALK R L = 50 W , C L = 5 pF, f = 1 MHz Room −53dBSource Off Capacitance C NO(off)Room 7.5Source-Off Capacitance d C NC(off) = 0 or V+ f = 1 MHzRoom 7.5Channel On Capacitance C NO(on)V IN = 0 or V+, f = 1 MHz Room 30pF Channel-On Capacitance dC NC(on)Room30Power SupplyPower Supply Range V+ 1.85.5V Power Supply Current I+V IN = 0 or V+Full0.011.0m ANotes:a.Room = 25°C, Full = as determined by the operating suffix.b.Typical values are for design aid only, not guaranteed nor subject to production testing.c.The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.d.Guarantee by design, nor subjected to production test.e.V IN = input voltage to perform proper function.f.Not production tested.TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)−60−40−2020406080100Supply Current vs. Input Switching FrequencyInput Switching Frequency (Hz)I + − S u p p l y C u r r e n t (A )0246810123456r ON vs. V COM and Supply VoltageV COM − Analog Voltage (V)− O n -R e s i s t a n c e (r O N W )01234567890123456r ON vs. Analog Voltage and TemperatureV COM − Analog Voltage (V)− O n -R e s i s t a n c e (r O N W )1100010000Supply Current vs. Temperature−150−125−100−75−50−2502550751001251500.00.5 1.0 1.5 2.0 2.5 3.0 3.5Leakage vs. Analog VoltageV COM , V NO , V NC −Analog Voltage (V)Temperature (_C)10100I +− S u p p l y C u r r e n t (p A )10 M2 M 10 mA 1 m A 100 nA −60−40−20204060801001100010000Leakage Current vs. TemperatureTemperature (_C)10100L e a k a g e C u r r e n t (p A )L e a k a g e C u r r e n t (p A )10 nA1 mA4 M 6 M 8 M 10 m A 100 m ATYPICAL CHARACTERISTICS (25_C UNLESS NOTED)0.00.20.40.60.81.01.21.41.61.8012345601020304050−60−40−2020406080100Switching Time vs. Temperaturevs. Supply VoltageTemperature (_C)t O N /t o f f − S w i t c h i n g T i m e (n s )Switching Voltage vs. Supply Voltage (V+)0.40.60.81.01.21.41.61.81.01.52.02.53.03.54.04.55.05.56.0V IN vs. V L (Typ)V L (V)V t h − T h r e s h o l d V o l t a g e−6−4−202468100123456Charge Injection at Source vs. Analog VoltageQ − C h a r g e I n j e c t i o n (p C )V COM − Analog Voltage (V)100 K1 M100 M1 GFrequency (Hz)Insertion Loss, Off Isolation and Crosstalkvs. Frequency10 M L o s s , O I R R , X t a l k (d B )V t h − T h r e s h o l d V o l t a g eV + − Supply Voltage (V)TEST CIRCUITSFIGURE 1.Switching TimeC L (includes fixture and stray capacitance)Logic InputV OUTV+0 VLogic InputSwitch OutputLogic “1” = Switch OnLogic input waveforms inverted for switches that have the opposite logic sense.V OUT +V COMǒR LR L )R ONǓV INHV INLFIGURE 2.Charge InjectionV genV+determined by sense of switch.FIGURE 3.Break-Before-Make IntervalC L (includes fixture and stray capacitance)0 VLogic InputSwitchOutputV O V NC = V NOV+V OV INLV INHTEST CIRCUITSFIGURE 4.Off-Isolation FIGURE 5.Channel Off/On CapacitanceNO ńNC。