TPCP8901(TE85L,F);中文规格书,Datasheet资料

0.28
+0.1 -0.11
2.4±0.1 2.8±0.1
Absolute Maximum Ratings (Ta = 25°C)
1.12+-00..1132
Characteristics
Symbol
Collector-base voltage Collector-emitter voltage
Emitter-base voltage
TPCP8901
TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process)
TPCP8901
Portable Equipment Applications Switching Applications
0.33±0.05
0.05 M A
See Figure 4 circuit diagram VCC ∼− 30 V, RL = 100 Ω IB1 = −IB2 = 10 mA
Min Typ. Max Unit
⎯
⎯ −100 nA
⎯
⎯ −100 nA
−50 ⎯
⎯
V
200
⎯
500
125 ⎯
⎯
⎯
⎯ −0.20 V
⎯
⎯ −1.10 V
⎯
8
Collector power dissipation (t = 10s) Single-device
PC (Note 2)
W
value at ingle-device operation
0.83
Collector power dissipation (DC)
Single-device
ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) Cob
tr tstg tf
VCB = −50 V, IE = 0 VEB = −7 V, IC = 0 IC = −10 mA, IB = 0 VCE = −2 V, IC = −0.1 A VCE = −2 V, IC = −0.3 A IC = −0.3 A, IB = −0.01 A IC = −0.3 A, IB = −0.01 A VCB = −10 V, IE = 0, f = 1MHz
: NPN VCE (sat) = 0.17 V (max) • High-speed switching : PNP tf = 70 ns (typ.)
: NPN tf = 85 ns (typ.)
0.475
1
4
0.65
2.9±0.1
S
0.025 S 0.17±0.02
B
0.05 M B
A
0.8±0.05
PC (Note 2)
W
value at dual
0.48
operation
Junction temperature Storage temperature range
Tj
150
°C
Tstg
−55 to 150
°C
Note 1: Please use devices on condition that the junction temperature is below 150℃. Icp=±5A (@ t≦100μs)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
Switching time
Storage time
Fall time
Symbol
Test Condition
8
5
Unit: mm
• Small footprint due to small and thin package • High DC current gain : PNP hFE = 200 to 500 (IC = −0.1 A)
:NPN hFE = 400 to 1000 (IC = 0.1 A) • Low collector-emitter saturation : PNP VCE (sat) = −0.20 V (max)
0.001
0.01
0.1
1
Collector current IC (A)
VCE (sat) – IC
1 Common emitter β = 50 Single nonrepetitive pulse
VBE (sat) – IC
10 Common emitter
β = 50
Single nonrepetitive pulse
IC – VBE
1.0 Common emitter
VCE = 2 V Single nonrepetitive pulse 0.8
0.6
Ta = 100°C
−55°C
0.4
0.2 25°C
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Base−emitter saturation voltage VBE (V)
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
Switching time
Storage time
Fall time
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Collector−emitter voltage VCE (V)
DC current gain hFE
TPCP8901
10000 1000 100
hFE – IC
Ta = 100°C
25°C
−55°C
10
Common emitter
VCE = 2 V
Single nonrepetitive pulse 1
See Figure 3 circuit diagram VCC ∼− −30 V, RL = 100 Ω −IB1 = IB2 = −10 mA
NPN
Characteristics
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
Collector current IC (A)
1
Ta = −55°C
25°C
100°C
0.1
0.001
0.01
0.1
1
Collector current IC (A)
Base-emitter saturation voltage VBE (sat) (V)
Collector−emitter saturation voltage VCE (sat) (V)
0.1
0.01 0.001
Ta = 100°C −55°C
25°C
0.01
0.1
1
Collector current IC (A)
Week of manufacture (01 for first week of year, continues up to 52 or 53)
Year of manufacture (One low-order digits of calendar year)
1 2 3 4
Lot No. (Weekly code)
Note 2: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
20μs
IB2 IB1
Duty cycle ＜1%
IB1 Input
IB2
Output VCC
RL
TPCP8901
Figure 4. Switching Time Test Circuit & Timing Chart
20μs
VCC