BAV21中文资料

BAS21J中文资料

BAS21J
Single high-speed switching diode
500 IF (mA)
400
mhc618
300
200
100
(1) (2) (3)
0
0
0.5
1 VF (V) 1.5
(1) Tamb = 150 °C (2) Tamb = 75 °C (3) Tamb = 25 °C
Fig 1. Forward current as a function of forward voltage; typical values
NXP Semiconductors
9. Package outline
BAS21J
Single high-speed switching diode
Description
BAS21J
SC-90
plastic surface-mounted package; 2 leads
Version SOD323F
4. Marking
Table 4. Marking codes Type number BAS21J
Marking code AN
BAS21J_1
I Voltage clamping I Reverse polarity protection
1.4 Quick reference data
Table 1. Symbol IF IR VR trr
Quick reference data Parameter forward current reverse current reverse voltage reverse recovery time
1.2 Features

BAW101S,115;中文规格书,Datasheet资料

Product data sheet2003 May 13High voltage double diode BAW101SFEATURES•Small plastic SMD package•High switching speed: max. 50 ns•High continuous reverse voltage: 300 V•Electrically insulated diodes.APPLICATIONS•High voltage switching•Automotive•Communication.DESCRIPTIONThe BAW101S is a high-speed switching diode array with two separate dice, fabricated in planar technology and encapsulated in a small SOT363 plastic SMD package. MARKINGNote1.∗ = p: Made in Hong Kong.∗ = t: Made in Malaysia.∗ = W: Made in China.PINNINGTYPE NUMBER MARKING CODE(1) BAW101S K2∗PIN DESCRIPTION 1anode 12n.c.3cathode 24anode 25n.c.6cathode 1High voltage double diodeBAW101SLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).Note1.Device mounted on an FR4 printed-circuit board, cathode-lead mounting pad = 1 cm2.ELECTRICAL CHARACTERISTICS T j = 25 °C unless otherwise specified.Note1.Pulse test: pulse width = 300 µs; δ = 0.02.SYMBOL PARAMETERCONDITIONSMIN.MAX.UNITPer diode V R continuous reverse voltage−300V series connection−600V V RRM repetitive peak reverse voltage−300V series connection−600V I F continuous forward current single diode loaded; note 1; see Fig.2−250mA double diode loaded; note 1; see Fig.2−140mA I FRM repetitive peak forward current −625mA I FSM non-repetitive peak forward currentsquare wave; T j = 25 °C prior to surge; t = 1 µs− 4.5A P tot total power dissipation T amb = 25 °C; note 1−350mW T stg storage temperature −65+150°C T j junction temperature−150°C T amb operating ambient temperature−65+150°CSYMBOL PARAMETERCONDITIONSMIN.MAX.UNITPer diode V BR(R)reverse breakdown voltage I R = 100 µA 300−V V F forward voltage I F = 100 mA; note 1− 1.1V I R reverse current V R = 250 V−150nA V R = 250 V; T amb = 150 °C−50µA t rr reverse recovery time when switched from I F = 30 mA to I R = 30 mA; R L = 100 Ω; measured at I R = 3 mA −50ns C d diode capacitanceV R = 0 V; f = 1 MHz−2pFHigh voltage double diodeBAW101STHERMAL CHARACTERISTICS Notes1.One or more diodes loaded.2.Device mounted on an FR4 printed-circuit board, cathode-lead mounting pad = 1 cm 2.SYMBOL PARAMETERCONDITIONS VALUE UNIT R th j-s thermal resistance from junction to soldering point note 1255K/W R th j-a thermal resistance from junction to ambientnote 2357K/WGRAPHICAL DATAHigh voltage double diode BAW101SHigh voltage double diode BAW101SHigh voltage double diode BAW101S PACKAGE OUTLINEHigh voltage double diodeBAW101SDATA SHEET STATUSNotes1.Please consult the most recently issued document before initiating or completing a design.2.The product status of device(s) described in this document may have changed since this document was publishedand may differ in case of multiple devices. The latest product status information is available on the Internet at URL . DOCUMENT STATUS (1)PRODUCT STATUS (2)DEFINITIONObjective data sheet Development This document contains data from the objective specification for product development.Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet ProductionThis document contains the product specification.DISCLAIMERSGeneral ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties,expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to informationpublished in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment orapplications and therefore such inclusion and/or use is at the customer’s own risk.Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage tothe device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at /profile/terms, including those pertaining to warranty, intellectual property rightsinfringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.Export control ⎯ This document as well as the item(s) described herein may be subject to export controlregulations. Export might require a prior authorization from national authorities.Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.NXP SemiconductorsCustomer notificationThis data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers.Contact informationFor additional information please visit: For sales offices addresses send e-mail to: salesaddresses@© NXP B.V. 2009All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.Printed in The Netherlands 613514/01/pp9 Date of release: 2003 May 13 Document order number: 9397 750 11148分销商库存信息: NXPBAW101S,115。

MCC21中文资料

Thyristor ModulesV RSM V RRM TypeV DSM V DRM V V 900 800MCC 21-08io8 B 13001200MCC 21-12io8 B 15001400MCC 21-14io8 B 17001600MCC 21-16io8 BData according to DIN/IEC 747 and refer to a single thyristor unless otherwise stated.Symbol Conditions Maximum RatingsI TRMS T VJ = T VJM33A I TAVM T C = 85°C; 180° sine 21A I TSMT VJ = 45°C;t = 10 ms (50 Hz), sine 320A V R = 0t = 8.3 ms (60 Hz), sine 350A T VJ = T VJM t = 10 ms (50 Hz), sine 280A V R = 0t = 8.3 ms (60 Hz), sine 310A I 2dtT VJ = 45°C t = 10 ms (50 Hz), sine 500A 2s V R = 0t = 8.3 ms (60 Hz), sine 520A 2s T VJ = T VJM t = 10 ms (50 Hz), sine 390A 2s V R = 0t = 8.3 ms (60 Hz), sine400A 2s (di/dt)crT VJ = T VJM repetitive, I T = 45 A 150A/µsf = 50Hz, t P = 200µs V D = 2/3 V DRM I G = 0.45 A non repetitive, I T = I TAVM 500A/µsdi G /dt = 0.45 A/µs(dv/dt)cr T VJ = T VJM ; V DR = 2/3 V DRM1000V/µs R GK = ¥; method 1 (linear voltage rise)P GM T VJ = T VJM t P =30 µs 10W I T = I TAVMt P =300 µs5W P GAV 0.5W V RGM 10V T VJ -40...+125°C T VJM 125°C T stg -40...+125°C V ISOL 50/60 Hz, RMS t = 1 min 3000V~I ISOL £ 1 mAt = 1 s 3600V~M d Mounting torque (M5)2.5-4.0/22-35Nm/lb.in.Terminal connection torque (M5) 2.5-4.0/22-35Nm/lb.in.WeightTypical including screws90gFeatures•International standard package,JEDEC TO-240 AA•Direct copper bonded Al 2O 3 -ceramic base plate•Planar passivated chips •Isolation voltage 3600 V~•UL registered, E 72873•Gate-cathode twin pins for version 1BApplications•DC motor control•Softstart AC motor controller•Light, heat and temperature controlAdvantages•Space and weight savings•Simple mounting with two screws •Improved temperature and power cycling•Reduced protection circuits6745321TO-240 AA3 6 1 5 2649Symbol Conditions Characteristic ValuesI RRM , IDRMTVJ= TVJM; VR= VRRM; VD= VDRM5mAVT IT= 45 A; TVJ= 25°C 1.6VVT0For power-loss calculations only (TVJ= 125°C)0.85VrT15m WVGT VD= 6 V;TVJ= 25°C 1.0VTVJ= -40°C 1.2VI GT VD= 6 V;TVJ= 25°C65mATVJ= -40°C80mAVGD TVJ= TVJM;VD= 2/3VDRM0.2VIGD5mAI L TVJ= 25°C; tP= 10 µs; VD= 6 V150mA IG= 0.3 A; diG/dt = 0.3 A/µsI H TVJ= 25°C; VD= 6 V; RGK= ¥100mAt gd TVJ= 25°C; VD= ½ VDRM2µs IG= 0.3 A; diG/dt = 0.3 A/µst q TVJ= TVJM; IT= 15 A, tP= 300 µs; -di/dt = 10 A/µs typ.150µs VR= 100 V; dv/dt = 20 V/µs; VD= 2/3VDRMI RM TVJ= TVJM; IT= 30 A, -di/dt = 0.3 A/µs4ARthJC per thyristor; DC current1.1K/Wper module other values0.55K/WRthJKper thyristor; DC current see Fig. 8/9 1.3K/Wper module0.65K/WdSCreepage distance on surface12.7mmdAStrike distance through air9.6mma Maximum allowable acceleration50m/s2Optional accessories for module-type MCC 23 version 1 BKeyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = redType ZY 200L(L = Left for pin pair 4/5)UL 758, style 1385,Type ZY 200R(R = right for pin pair 6/7)CSA class 5851, guide 460-1-1Dimensions in mm (1 mm = 0.0394")Fig. 1 Gate trigger characteristicsFig. 2 Gate trigger delay time。

BAV70LT1中文资料

LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching DiodeCommon Cathode共阴极单片双开关二极管3CATHODE阴极DEVICE MARKING器件标识BAV70LT131ANODE阳极 12 2ANODE阳极CASE 318-08, STYLE 9SOT-23 (TO-236AB)BAV70LT1 = A4MAXIMUM RATINGS (EACH DIODE) 最大额定值Rating Symbol Value Unit Reverse Voltage反向电压V R 70 VdcForward Current正向电流I F 200 mAdcPeak Forward Surge Current正向浪涌电流峰值I FM(surge) 500 mAdcTHERMAL CHARACTERISTICS热特性Characteristic Symbol Max Unit Total Device Dissipation FR- 5 Board (1) P D 225 mWT A = 25°CDerate above 25°C FR – 5板的器件总功耗 1.8 mW/°CThermal Resistance, Junction to Ambient R θJA 556 °C/WTotal Device Dissipation P D 300 mWAlumina Substrate, (2) T A = 25°CDerate above 25°C氧化铝基板的器件总功耗 2.4 mW/°CThermal Resistance, Junction to Ambient热阻，结到环境R θJA 417 °C/WJunction and Storage Temperature结温和存储温度T J , T stg -55 to +150 °CELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (EACH DIODE)电气特性Characteristic Symbol Min Max Unit OFF CHARACTERISTICS开关特性Reverse Breakdown Voltage反向击穿电压(I (BR) = 100 µAdc)Reverse Voltage Leakage Current反向漏电流电压(V R = 25 Vdc, T J = 150°C)(V R = 70 Vdc)(V R = 70 Vdc, T J = 150°C)Diode Capacitance二极管电容(V R = 0, f = 1.0 MHz) V (BR) 70 —VdcI R µAdc—60— 2.5—100C D — 1.5 pFForward Voltage正向电压(I F = 1.0 mAdc)(I F = 10 mAdc)(I F = 50 mAdc)(I F = 150 mAdc)Reverse Recovery Time反向恢复时间 R L = 100 Ω(I F = I R = 10 mAdc, V R = 5.0 Vdc, I R(REC) = 1.0 mAdc) (Figure 1) V F mVdc—715—855—1000—1250t rr — 6.0 ns1. FR-5 = 1.0 x 0.75 x 0.062 in.2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.G5-1/1。

BAV21WS-V中文资料

BAV19WS-V/20WS-V/21WS-VDocument Number 85726Rev. 1.4, 31-Jul-06Vishay Semiconductors120145Small Signal Switching Diodes, High VoltageFeatures•Silicon Epitaxial Planar Diodes •For general purpose•These diodes are also available in othercase styles including: the DO35 case with the type designation BAV19 - BAV21, the MiniMELF case with the type designation BAV100 - BAV103, the SOT23 case with the type designation BAS19 -BAS21 and the SOD123 case with the type desig-nation BAV19W-V - BAV21W-V •Lead (Pb)-free component•Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/ECMechanical DataCase: SOD323 Plastic case Weight: approx. 5.0 mgPackaging Codes/Options:GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/3 k per 7" reel (8 mm tape), 15 k/boxParts TablePartT ype differentiation Ordering codeType MarkingRemarks BAV19WS-V V R = 100 V BAV19WS-V-GS18 or BAV19WS-V-GS08A8Tape and Reel BAV20WS-V V R = 150 V BAV20WS-V-GS18 or BAV20WS-V-GS08A9Tape and Reel BAV21WS-VV R = 200 VBAV21WS-V-GS18 or BAV21WS-V-GS08AATape and Reel 2Document Number 85726Rev. 1.4, 31-Jul-06BAV19WS-V/20WS-V/21WS-VVishay Semiconductors Absolute Maximum RatingsT amb = 25°C, unless otherwise specified1) Valid provided that leads are kept at ambient temperatureThermal CharacteristicsT amb = 25°C, unless otherwise specified1) Valid provided that leads are kept at ambient temperatureElectrical CharacteristicsT amb = 25°C, unless otherwise specifiedParameterTest conditionPart Symbol Value Unit Continuous reverse voltageBAV19WS-V V R 100V BAV20WS-V V R 150V BAV21WS-VV R 200V Repetitive peak reverse voltageBAV19WS-V V RRM 120V BAV20WS-V V RRM 200V BAV21WS-VV RRM 250V Forward continuous currentT amb = 25°CI F 2501)mA Rectified current (average) half wave rectification with resist. loadT amb = 25°C I F(AV)2001)mARepetitive peak forward current f ≥ 50 Hz, θ = 180°, T amb = 25°C I FRM 6251)mA Surge forward current t < 1 s, T j = 25°C I FSM 1A Power dissipationT amb = 25°CP tot2001)mWParameterTest condition Symbol Value Unit Thermal resistance junction to ambient airR thJA 6501)K/W Junction temperature T j 1501)°C Storage temperature rangeT stg- 65 to + 1501)°CParameterTest conditionPartSymbol MinTyp.Max Unit Forward voltage I F = 100 mA V F 1.00V I F = 200 mA V F 1.25V Leakage currentV R = 100 VBAV19WS-V I R 100nA V R = 100 V , T j = 100°C BAV19WS-V I R 15µA V R = 150 VBAV20WS-V I R 100nA V R = 150 V , T j = 100°C BAV20WS-V I R 15µA V R = 200 VBAV21WS-V I R 100nA V R = 200 V , T j = 100°CBAV21WS-VI R 15µA Dynamic forward resistance I F = 10 mA r f 5ΩDiode capacitance V R = 0, f = 1 MHz C D 1.5pF Reverse recovery timeI F = 30 mA, I R = 30 mA, I rr = 3 mA, R L = 100 Ωt rr50nsBAV19WS-V/20WS-V/21WS-VDocument Number 85726Rev. 1.4, 31-Jul-06Vishay Semiconductors3Typical CharacteristicsT amb = 25°C, unless otherwise specifiedFigure 1. Forward Current vs. Forward Voltage Figure 2. Admissible Forward Current vs. Ambient Temperature Figure 3. Admissible Power Dissipation vs. Ambient Temperature 18858I - F o r w a r d C u r r e n t (m A )F V F - For w ard V oltage (V )30609012015018859T am b - Am b ient Temperat u re (°C)I ,I - A d m i s s i b l e F o r w a r d C u r r e n t (A )O F 20018864T am b - Am b ient Temperat u re (°C)250200150100502040608010012014016018000P - A d m i s s i b l e P o w e r D i s s i p a t i o n (W )t o t Figure 4. Dynamic Forward Resistance vs. Forward CurrentFigure 5. Leakage Current vs. Junction TemperatureFigure 6. Capacitance vs. Reverse Voltager -D y n a m i c F o r w a r d R e s i s t a n c e f (Ω)10100111001018861I F - For w ard C u rrent (mA)0.118862110100100020406080100120140160180200I (T )/I (25 °C ) - L e a k a g e C u r r e n tR R j T j - J u nction Temperat u re (°C)Re v erse V oltageBA V 19W S-V V = 100 V R BA V 20W S-V V =150V R BA V 21W S-V V =200VR 188631100.10.80.60.41.41.21.00.20100C -D i o d e C a p a c i t a n c e (p F )D V R - Re v erse V oltage (V )2.01.81.6=25°CT j 4Document Number 85726Rev. 1.4, 31-Jul-06BAV19WS-V/20WS-V/21WS-V Vishay SemiconductorsPackage Dimensions in mm (Inches): SOD323BAV19WS-V/20WS-V/21WS-VDocument Number 85726Rev. 1.4, 31-Jul-06Vishay Semiconductors5Ozone Depleting Substances Policy StatementIt is the policy of Vishay Semiconductor GmbH to1.Meet all present and future national and international statutory requirements.2.Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.We reserve the right to make changes to improve technical designand may do so without further notice.Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personaldamage, injury or death associated with such unintended or unauthorized use.Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, GermanyDocument Number: 91000Revision: 18-Jul-081DisclaimerLegal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件交易网。

MCC BAS21系列切换晶体管数据手册说明书

***LIFE SUPPORT***
MCC's products are not authorized for use as critical components in life support devices or systems without the express written approval of Micro Commercial Components Corporation.
Internal Structure
225mW 250Volt Switching Diode
SOT-23
A D
CB
F
E
G
H
J
L
K
DIMENSIONS
DIM
INCHES
MM
MIN MAX MIN MAX
A 0.110 0.120 2.80 3.04
B 0.083 0.104 2.10 2.64
C 0.047 0.055 1.20 1.40
VF
1.10V
IFM=100.0mA TJ=25℃
Maximum leakage current
IR
1.0μA
VR=200V TJ=25℃
Diode Capacitance
CD
Reverse
Recovery Time
trr
5.0pF
VR=0.0V,f=1.0MHz
50.0ns
Note: 1. Halogen free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

ADC Adtemp 419 人体 ipotermia 数字温度计说明书

Adtemp TM 419 Termometro Digitale Per IpotermiaIstruzioniper l'usoGrazie per aver scelto un termometro digitale ADC ® AdtempTM . Il tuo nuovo termometro per ipotermia è progettato per fornire misurazioni della temperatura corporea accurate e ad ampio raggio. I termometri Adtemp soddisfano o superano tutti gli standard di prestazione internazionali pertinenti.Descrizione del Dispositivo e Uso PrevistoQuesto dispositivo è progettato per misurare la temperatura del corpo umano in bambini e adulti. Ha un display digitale e può essere utilizzato in un ambiente professionale o domestico.Parti e AssemblaggioDefinizioni dei SimboliI seguenti simboli sono associati al termometro.Senza ftalatiMantenere asciutto Istruzioni per l'usoo pratica che, se non corretta o interrotta immediatamente, potrebbe causare lesioni, malattie o morte al paziente.AVVERTIMENTO: Questo strumento è progettato esclusivamente per uso orale, rettale o ascellare.AVVERTIMENTO: La febbre alta e prolungata richiede cure mediche, soprattutto per i bambini piccoli. Si prega di contattare il proprio medico.AVVERTIMENTO: tenere fuori dalla portata dei bambini non sorvegliati. I componenti possono essere nocivi se ingeriti.AVVERTIMENTO: smettere di usare il termometro se funziona in modo irregolare o se il display non funziona correttamente.AVVERTIMENTO: le letture orali sono generalmente inferiori di 0,5 ° F a 1,0 ° F rispetto alle letture rettali; le letture ascellari sono generalmente da 0,5 ° F a 1,0 ° F inferiori rispetto alle letture orali.AVVERTIMENTO: evitare di misurare la temperatura per 30 minuti dopo l'esercizio fisico, il bagno, il pranzo o il consumo di bevande calde o fredde.AVVERTIMENTO: lasciare che il termometro si riscaldi naturalmente a temperatura ambiente prima dell'uso. Le prestazioni possono essere compromesse se utilizzato o conservato al di fuori degli intervalli di temperatura e umidità indicati o se la temper-atura del paziente è inferiore alla temperatura ambiente (ambiente).AVVERTIMENTO: dopo l'uso, pulire il termometro e inserirlo nella custodia. Pulirel'unità strofinandola con un panno asciutto e disinfettare la sonda con alcol isopropil-ico (sfregante). Vedere le istruzioni per la pulizia per ulteriori dettagli. ATTENZIONE: Tenere il termometro lontano dalla luce solare diretta, umidità, temper-ature estreme o polvere.ATTENZIONE: non far bollire, mordere, piegare, far cadere o smontare il termometro. ATTENZIONE: non aprire l'unità se non per sostituire la batteria. ATTENZIONE: non utilizzare questo dispositivo vicino a forti campi elettromagnetici, come i telefoni cellulari.ATTENZIONE: non lasciare che il termometro venga a contatto con diluenti o solventi chimici. ATTENZIONE: smaltire le batterie in conformità con le normative locali applicabili, non con i rifiuti domestici.4. Risciacquare il dispositivo con acqua potabile o acqua distillata per garantire larimozione di tutti i residui di detergente.5. Se necessario, ripetere i passaggi da 2 a 4 per assicurarsi che il dispositivo sia pulito.6. È necessaria un'ultima passata per evitare macchie d'acqua.Processo di Disinfezione1.Pulire la sonda con un panno imbevuto di una soluzione disinfettante come unasoluzione alcolica isopropilica al 70-75% (sfregamento): tempo di contatto ≥ 10 minuti per la disinfezione.2. Risciacquare i residui di disinfettante.Processo di EssiccazioneLasciare asciugare il dispositivo all'aria a temperatura ambiente.Cura e Conservazione• NON far cadere o schiacciare; questo dispositivo non è resistente agli urti.• NON smontare o modificare il dispositivo diverso dalla sostituzione delle batterie. • NON conservare il dispositivo in un ambiente estremo con luce solare diretta o temperature alte / basse o in un luogo con elevata umidità o polvere. SpecificazioniCampo di Misura:78.8~111.0°F (26.0°C~43.9°C) Risoluzione:0.1°F (-17.72°C)<96.4°F ±0.5°F(<35.8°C ±0.3°C)96.4°F~98.0° ±0.3°F (35.8°C~36.7°C ±0.2°C) Precisione: 98.0°F~102.0°F ±0.2°F(36.7°C~38.9°C ±0.1°C)102.3°F~106.0°F ±0.3°F(39.1°C~41.1°C ±0.2°C)>106.0°F ±0.5°F(>41.1°C ±0.3°C) Memoria:Ultima LetturaBatteria (Inclusa):Batteria LR41 x 1 pzDimensioni:129.4mm x 21.0mm x 11.9mmDurata della Batteria:Più di 5000 misurazioniPeso:Circa. 13g compresa la batteriaCondizioni Operative:60.8~104.0°F, R.H. del 15~95% senza condensa Condizioni di Archiviazione:-4~120°F , R.H. del 15~95% senza condensa Standards:Rispettare ASTM-E1112Garanzia LimitataADC garantisce i suoi prodotti contro i difetti di materiali e lavorazione in condizioni di normale uso e servizio domestico come segue:1. Il servizio di garanzia si estende solo all'acquirente al dettaglio originale einizia dalla data di consegna.2. Il termometro per ipotermia Adtemp è garantito per due anni dalla data di acquisto. Cosa È Coperto: Sostituzione di parti e manodopera.Cosa Non È Coperto Dalla Garanzia: Spese di trasporto ad ADC. Batterie dove fornite. Danni causati da abuso, uso improprio, incidente o negligenza. Danni acciden-tali, speciali o consequenziali. Alcuni stati non consentono l'esclusione o la limitazione di danni incidentali, speciali o consequenziali, quindi questa limitazione potrebbe non essere applicabile.Per Ottenere Il Servizio Di Garanzia: Inviare gli articoli con affrancatura a ADC, Attn: Repair Dept., 55 Commerce Dr., Hauppauge, NY 11788. Includere nome e indi-rizzo, numero di telefono, prova d'acquisto e una breve nota che spiega il problema. Garanzia Implicita: Qualsiasi garanzia implicita avrà una durata limitata ai termini della presente garanzia e in nessun caso oltre il prezzo di vendita originale (eccetto dove proibito dalla legge). Questa garanzia conferisce diritti legali specifici e potresti avere altri diritti che variano da stato a stato.Per I Consumatori Australiani: I nostri prodotti vengono forniti con garanzie che non possono essere escluse dalla legge australiana sui consumatori. Hai diritto alla sostituzione o al rimborso per un guasto grave e al risarcimento per qualsiasi altra perdita o danno ragionevolmente prevedibile. Hai anche il diritto di far riparare o sostituire la merce se la merce non è di qualità accettabile e il guasto non costituisceun guasto grave.Dongguan Polygreen Technology Co., Ltd. Hsinchiao Industrial Zone, HuangjiangDongguan, Guandong, ChinaPOLYGREEN GERMANY GmbHRuhlsdorfer Straβe 95, D-14532, Stahnsdorf, Brandenburg, GermanyDistribuito da: ADC®55 Commerce DriveHauppauge, NY 11788 Ispezionato negli Stati UnitiFatto in Cinatel: 631-273-9600 toll free: 1-800-232-2670fax: 631-273-9659 email:*****************Leggere attentamente il manuale di istruzioni prima diutilizzare questo dispositivo, in particolare le istruzioni disicurezza, e conservare il manuale di istruzioni per usi futuri.Parte applicata di tipo BFLe batterie e i dispositivi elettronici devonoessere smaltiti in conformità con le normativelocali applicabili, non con i rifiuti domestici.IB p/n 93-419-00 rev 6 Stampato in Cina。

ATV21施耐德变频

● 1 模拟输出 ●FM 可通过跳线配置为0,+10V or 4-20mA ●电压 ± 10 V or 0-10 V 470…… ●电流 X-Y mA with X and Y of 0 to 20 mA, 电抗 500 ●采样时间 2ms ± 0,5 ms ●分辨率: 10 bits ●精度 : ± 1 %，温度变化范围 of 60 °C ●线性度 : 最大值的± 0.2 %
5
概述
● ATV21 是一个简单的产品，集成了专用于HVAC 应用的功能 ● 随产品有一个前操作盘和一个4位7段码显示器 ● 在通信方面，提供用于建筑市场的大量可选协议，并标准内置Modbus
协议。 ● 设计使用于全球市场 ● 符合主要的标准和国际指导规范，包括EMC和环境保护。
6
产品范围
Altivar 21 覆盖电机的功率范围0.75 kW 至 75 kW ● 380 - 480V 三相, 从 0.75 kW 到 75 kW ● 200 - 240V 三相, 从 0.75 kW 到 30 kW
● 专利的低谐波技术使谐波水平大幅度减少，使得THDI<30% 无需外加谐波滤波器
● 额定开关频率 8 or 12kHz 减少电机噪声
可以快速断开EMC滤波器 (例如 IT配电系统)
ATV21
EMC filter
M
23
基本产品结构
● 功率部分 :
● EMC 接线金属版
24
基本产品结构
● 功率端子:
7
产品范围 UL type1, IP20
● 技术的多样化
顶部IP4x
ATV31H 本体
ATV61H 本体
8
产品范围 IP54
● 技术的的多样化

柯顿2110背负式短波电台中文版技术手册

这就意味着用户不再需要备用电池以减轻用户出行重量。语音加密功能
为了其他安全方面的考虑，2110 对传送信息及位置信息也是加密的。可确保语音信息传输安全。抗震、抗毁性能符合 MIL-STD-810F 指
标可以在恶劣的坏坏境中工作。防水性能好
2110 提供的防水连接头，包括手咪话筒，扬声器，按键以及扩展的数据端口等等。可浸没在 1 米深
酶菌：
MIL-STD-810F,Method 508.5
盐雾：
MIL-STD-810F,Method 509.4，Procedure 1
沙尘：
MIL-STD-810F,Method 510.4，Procedure 1
MIL-STD-188-141B（要求 ALE）
串口 RS-232，红外线（IrDA）
湿度：
MIL-STD-810F,Method 507.4
振动(3 小时/每个轴向）： MIL-STD-810F,Method 514.5
冲击：
MIL-STD-810F,Method 516.5，Procedure 1
密封(浸没)：
MIL-STD-810F,Method 512.4，Procedure 1
发射 1.6 到 30 MHz;接收 250 kHz 到 30 MHz
400 个信道,10 个网络组
600 个信道,20 个网络组(符合军标 MIL-STD-188-141B ALE)
单边带(J3E)USB,LSB;可选 USB,LSB;AM(H3E);CW(J2A);AFSK(J2B)
±1.5ppm 或±0.5ppm(-30 到+60℃)
的水中而不损坏。重量轻
2.5 公斤，电台和电池外壳采用超轻合金及超性能工程塑料制成。是当今世界上最轻，经过认证的

FOSAN富信电子二级管 BAV19WS-BAV21WS-产品规格书

安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.BAV19WS-BAV21WS SOD-323Switching Diode开关二极管■Features特点Fast Switching Speed快的开关速度Surface mount device表面贴装器件High Conductance高电导率Case封装:SOD-323■Maximum Rating最大额定值(T A=25℃unless otherwise noted如无特殊说明，温度为25℃)Characteristic特性参数Symbol符号BAV19WS BAV20WS BAV21WS Unit单位Peak Reverse Voltage反向峰值电压V RRM120200250VDC Reverse Voltage直流反向电压V R120200250V RMS Reverse Voltage反向电压均方根值V R(RMS)100150200V Forward Rectified Current正向整流电流I F0.25A@1SPeak Surge Current峰值浪涌电流@1mS@1µS I FSM139APower Dissipation耗散功率P D200mW Thermal Resistance J-A结到环境热阻RθJA625℃/W Junction/Storage Temperature结温/储藏温度T J,T stg-50to+150℃℃■Electrical Characteristics电特性(T A=25℃unless otherwise noted如无特殊说明，温度为25℃)Characteristic特性参数Symbol符号BAV19WS BAV20WS BAV21WS Unit单位Condition条件Reverse Voltage反向电压V R120200250V I R=1mA Forward Voltage正向电压V F 1.25V I F=0.2A Reverse Current反向电流I R0.1µA V R=V RRM Reverse Recovery Time Trr50nSDiode Capacitance二极管电容C T5pF V R=4V,f=1MHzANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.BAV19WS-BAV21WS ■Typical Characteristic Curve典型特性曲线ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.BAV19WS-BAV21WS ■Dimension外形封装尺寸SOD-323。

境外合作编目中的MARC21中文书目记录解析.

收稿日期:2010-12-07 修回日期:2011-01-18作者简介:张明东(1969-),男,副研究馆员,总数据师,研究方向为知识管理㊁中西文献编目比较㊂境外合作编目中的MARC21中文书目记录解析张明东(1.北京大学图书馆　北京　100871;2.CALIS 管理中心　北京　100871)摘　要　从介绍多文种记录的模式入手,对在境外合作编目中编制的MARC21格式的中文记录的结构㊁内容和特点等作了归纳和分析,对新罗马化拼音准则的特征及拼音形式进行了说明㊂以期找出提高中文MARC21书目记录质量的方法与途径,为提供标准的㊁国际化的中文文献书目数据做出努力,消除语言障碍,使中文文献直接面对各国读者㊂关键词　MARC21　中文文献　编目字段　编目标准　境外合作编目中图分类号　G254.36 文献标识码　A 文章编号　1002-1965(2011)03-0176-06Overseas Cooperative Cataloging in MARC21Chinese Bibliographic RecordsZHANG Mingdong(1.Peking University Library ,Beijing 100871;2.CALIS Administrative Center ,Beijing 100871)Abstract This paper summarizes and analyses the structure ,content and features of the Overseas Cooperative Cataloging in MARC 21Chinese records ,which begins with the introduction of multilingual record mode ,and describes the characteristics and phonetic forms of the New Chinese Romanization Guidelines.And efforts are made to identify the methods and approaches in increasing the quality of Chi⁃nese MARC 21bibliographic records ,to provide standard ,international Chinese bibliographic data ,to eliminate the language barrier ,and to make Chinese documents directly in the face of different readers at home and abroad.Key words MARC 21　Chinese literature cataloging fields cataloguing standards Overseas Cooperative Cataloging0　引　言MARC 21格式,90年代前名为USMARC 格式,是美欧等国及许多亚洲国家和地区使用的文献著录格式,也是我国图书馆界主要使用的西文文献著录格式㊂MARC 21格式历经半个多世纪的充实完善,已经形成了一套极其完备的规则和严谨的格式体系,在许多国家和地区被广泛采用,包括中国的港澳地区㊂而且放弃本国原先的MARC 格式而采用MARC 21的国家越来越多㊂它与各种语言文字相结合,适应了各文种的不同特点,产生了大量多文种记录㊂从作为中介语的角度,比其他用自然语言做标识的元数据更有优势㊂但是由于我国西文文献机读目录编制工作开展时间不长,而用MARC 21对中文图书进行编目只是随着境外合作编目的开展才刚刚起步,有关格式㊁规则及使用说明的文献较少,因此在使用过程中存在不少的问题㊂下面对MARC 21格式的中文记录的模式㊁结构和内容等作介绍与分析,以期找出提高中文MARC 21书目记录质量的方法与途径㊂1　多文种记录的交替文字描述及连接境外合作编目就是国内编目机构根据国外机构的要求向其提供标准的㊁国际化的中文文献书目数据的过程㊂所编中文文献的书目数据格式是以MARC 21为基本格式㊁以新罗马化拼音为主要编目字符,并通过880连接字段将拼音和汉字字段相连接而构成㊂中文MARC 21记录依据的著录条例是‘英美编目条例第二修订版“(AACR 2),著录格式是‘国际标准第30卷　第3期2011年3月情　报　杂　志JOURNAL OF INTELLIGENCE Vol.30　No.3Mar.　2011书目著录规则“(ISBD),采用的主题标引工具为‘美国国会图书馆主题词表“(LCSH),分类标引工具是‘美国国会图书馆分类法“(LC Call Number)和‘杜威十进分类法“(DDC),名称规范是美国国会图书馆的规范,拼音规则是美国国会图书馆的‘新汉语罗马化准则“㊂要分析中文MARC21记录,就得先介绍多文种记录(Multi-script Records)㊂它是指一条书目记录经过计算机自动处理,能显示和提供两种文字,以便使用不同文种的用户浏览和检索机读目录㊂根据在编文献和编目语言使用文种的情况,多文种记录分原始多文种记录和音译多文种记录两种模式㊂原始多文种记录又称简单多文种记录(Simple Multi-script Records),任何语言都可以放在规定字段中,在此情况下,任何字段都是可重复的㊂音译多文种记录(Vernacular and Transliteration)也被称作本国语言和音译模式,则是比较常用的一种处理模式㊂在这个模式里,本国语言和音译被放在不同的固定字段里,一般采用880字段来处理一条编目记录中同时出现的本国语言和音译㊂根据880字段的定义,它是用来存放交替图形符号(Alternate Graphic Repre⁃sentation),那么像中日韩这样的图形”文字,就应该放在880字段里㊂MARC21建议,如果一条记录里同时有本国语言和音译,最好使用此模式㊂一般来说,该模式用于对非拉丁文文献的拉丁化录入,即对非拉丁文文献采用拉丁字母拼音来记录㊂880字段本身可以放这种信息,其语义是通过$6连接子字段和非880字段连接起来,通过这个连接来指示特定880字段的语义㊂如88000$6245-01就和题名与责任说明项联系起来,这个880字段就是用图形”文字描述的题名和责任者;又如880##$6260-03就和出版发行项连接起来,这个880字段就是用图形”文字描述的出版地㊁出版者和出版年㊂英美国家的书目数据库主要是用这一模式来描述非罗马文字的书目信息的㊂中文书目记录显然属于这一模式,对于中文数据而言,汉字信息也是放在880字段㊂可见,创建这种记录,最重要的特点就是使用$6子字段和880字段㊂$6连接子字段(Link Subfield):$6子字段在一般字段和880交替文字描述字段中成对使用,且总出现在字段中的第一位置㊂在用编目语言即英文录入的一般字段中,子字段的结构形式为:$6连接字段号-序号在用编目语言(英文)录入的一般字段中,$6子字段后录入的连接字段号(Link Tag)总是等同于880,因为一般字段中的数据元素若是要用另一种文字表示,一定是通过880字段而非其他任何字段[1]㊂$6子字段连接字段号和连词符后的序号(Oc⁃currence Number)由00-99依次组成,在一般字段中通常从 01”开始[1]㊂例:1001#$6880-01$aQian,Yigui,$db.1754? 24510$6880-02$aYi lue/$cQian Yigui.880交替文字描述字段(Alternate Graphic Repre⁃sentation Field):880字段为可重复字段,用于同条记录中另一字段不同文字的指定描述㊂880字段是通过$6子字段实现与相关字段的连接的[1]㊂而880字段$6子字段的结构形式为:$6连接字段号-序号/文种识别代码/方向代码880字段中$6子字段的连接字段号即被连接字段的字段标识符,其后的序号等同于相关字段中的序号㊂第一个斜线后录入文种识别代码,中㊁日㊁韩文均为$1;第二个斜线后录入方向代码(Orientation Code),表示字段中文字行文的方向㊂一般文字从左往右书写,此时可不用录入斜线和方向代码,即作缺省处理[1]㊂880字段第1和第2指示符的定义和值与相关字段指示符相同,其子字段代码的设置也与相关字段的子字段代码相同㊂对应上例:8801#$6100-01/$1$a钱一桂,$db.1754? 88010$6245-02/$1$a医略/$c钱一桂.当880字段没有与之连接的相关字段时,$6子字段中的序号可为 00”,通常见于附注字段㊂例: 880##$6500-00/$1$a據[淸光緖]抄本影印.2　MARC21中文书目记录的主要结构一条标准的MARC21中文书目记录可分为六个主要的部分:第一部分:头标和可变长控制字段块㊂即记录头标和所有的00X字段,数据内容大部分是定义过的代码㊂系统可据此识别书目记录的特征,自动生成记录长度㊁数据基地址㊁地址目次区结构等数据元素,并按照需要对记录进行检索或批处理,也可根据某些数据元素对书目数据库中的文献类型进行管理和统计㊂第二部分:号码和代码字段块㊂即所有的01X-09X字段,属于可变长数据字段,记录与书目记录和文献实体有关的控制号㊁标准号㊁分类/索书号和各种代码等信息,部分可作检索点㊂第三部分:新罗马化拼音标目和著录信息块㊂即㊃771㊃　第3期张明东:境外合作编目中的MARC21中文书目记录解析除6XX字段以外的,从1XX字段到880以前的所有字段[2],包括主要款目标目㊁题名与责任说明项㊁版本项㊁出版发行项㊁载体形态项㊁丛编项㊁附注项㊁附加款目等㊂除了载体形态项外,这些字段多采用新罗马化拼音著录㊂属于可变长数据字段㊂第四部分:主题款目块㊂即6XX字段,主要包括个人/团体/会议名称款目㊁统一题名款目㊁论题性款目㊁地理名称款目等㊂属于可变长数据字段㊂第五部分:以880字段连接的汉字著录信息块㊂内容与形式同第三部分新罗马化拼音标目和著录信息块及第四部分主题款目块保持一致与对应[2]㊂属于可变长数据字段㊂第六部分:馆藏信息块㊂包括各类馆藏信息,如索书号㊁馆藏址㊁文献标识等,具体记录于9XX字段[2]㊂属于可变长数据字段㊂下面将主要涉及$6子字段的第三㊁四部分与涉及880字段的第五部分加以对照说明㊂主要款目标目:记录书目记录中作为主要款目标目的个人㊁团体㊁会议名称或统一题名,是书目查询的重要检索点㊂例:1001#$6880-01$aDing,Xueliang,$d1952-8801#$6100-01/$1$a丁学良,$d1952-1102#$6880-01$aGuo wu yuan jiu feng ban (China).$bZong he zu.8802#$6110-01/$1$a国务院纠风办(China). $b综合组.1101#$6880-01$aChina.$bQuan guo ren min dai biao da hui$n(7th,4th session:$d1991) 8801#$6110-01/$1$aChina.$b全国人民代表大会$n(7th,4th session:$d1991)1300#$6880-01$aShan hai jing.8800#$6130-01/$1$a山海經.题名与责任说明项:题名与责任说明是书目记录中最重要的著录单元,包括正题名㊁载体㊁其他题名信息和责任说明等信息㊂著录时按规定信息源出现的形式和次序如实转录㊂例:24510$6880-02$aMin jian wen yi cong hua/ $cZhong Jingwen zhu.88010$6245-02/$1$a民間文藝叢話/$c锺敬文著.24510$6880-02$aZhongguo gao duan fang wen.$n1,$pYing xiang Zhongguo gao ceng jue ce de 18ren/$cWu Zhifei,Yu Wei zhu.88010$6245-02/$1$a中国高端访问.$n1, $p影响中国高层决策的18人/$c吴志菲,余玮著.版本项:记录文献的版本信息,用于区分相同著作的不同版本㊂版次应使用阿拉伯数字形式,版本术语使用标准用语㊂第一版仍需著录,这点与CNMARC 不同㊂例:250##$6880-03$aDi1ban.880##$6250-03/$1$a第1版.出版发行项:出版地㊁出版者和出版年等事项著录在本项,印刷和发行事项根据情况选用㊂例: 260##$6880-03$aTianjin Shi:$bTianjin da xue chu ban she,$c2009.880##$6260-03/$1$a天津市:$b天津大学出版社,$c2009.载体形态项:记录文献载体的物理形态特征,是唯一不采用新罗马化拼音著录的著录信息项㊂用编目语言即英文著录,页㊁叶㊁卷册㊁图㊁图版分别转化为p.㊁leaves㊁v.㊁ill.㊁plate表示㊂例:300##$a3,7,382p.:$bcol.ill.;$c25cm. 300##$a3v.;$c25cm.丛编说明项:丛编题名记录在490字段㊂当丛编题名不作检索点时,指示符1取0;作检索点时,指示符1取值为1,此时需启用800/810/811/830字段记录规范的丛编题名㊂440字段不再使用㊂例: 4900#$6880-05$aYunnan min zu da xue xue shu wen ku8800#$6490-05/$1$a云南民族大学学术文库4901#$6880-05$aFeng huang wen ku 830#0$6880-09$aFeng huang wen ku.$pHai wai Zhongguo yan jiu xi lie.8801#$6490-05/$1$a凤凰文库880#0$6830-09/$1$a凤凰文库.$p海外中国研究系列.附注项:凡以上各项因著录规则的规定未予著录而又必须进一步补充说明的内容,均在本项著录㊂例: 500##$6880-06$a"Sheng huo shi yong ban"--title page.880##$6500-06/$1$a"生活实用版"--title page.505字段指示符2为0时,表示为增强级”,需启用$g㊁$t和$r等子字段㊂此时,$t中的题名信息是具有检索功能的,不再需要通过740来提供题名附加款目检索[3]㊂例:50510$6880-05$g[1-11]$tZhongguo shu hua =Chinese painting and calligraphy--$g[12]$tCi qi =Porcelain--$g[13]$tYu qi,Jia ju,Gong yi pin= Jade furniture and works of art--88010$6505-05/$1$g[1-11]$t中國書畫= Chinese painting and calligraphy--$g[12]$t瓷器=㊃871㊃情　报　杂　志第30卷Porcelain--$g[13]$t玉器,家具,工藝品=Jade furniture and works of art--附加款目:记录书目记录中作为附加款目标目的名称㊁题名或术语,是相对于主要款目而言的标目㊂它提供与所编文献有关的责任者㊁相关题名等检索点㊂例:24510$6880-01$a1900,Meiguo she ying shi de Zhongguo zhao pian ri ji/$cZhanmusi Lika'erdun zhu; Xu Guangyu yi.7001#$6880-05$aXu,Guangyu. 88010$6245-01/$1$a1900,美国摄影师的中国照片日记/$c詹姆斯㊃利卡尔顿著;徐广宇译. 8801#$6700-05/$1$a徐广宇. 24500$6880-01$aZhongguo dang dai shao shu min zu wen xue fan yi zuo pin xuan/$cZhongguo zuo jia xie hui bian.7102#$6880-05$aZhongguo zuo jia xie hui. 88000$6245-01/$1$a中国当代少数民族文学翻译作品选/$c中国作家协会编.8802#$6710-05/$1$a中国作家协会.主题字段:以中文个人㊁团体㊁会议㊁地理名称和统一题名作为款目要素的主题附加款目,以及论题性主题的中文地理复分,也需要多文种对应㊂注意,此时880字段第2指示符为4(未说明主题词来源),而非0 (LC主题标目)㊂例:60010$6880-05$aGuo,Moruo,$d1892-1978 $xBibliography.88014$6600-05/$1$a郭沫若,$d1892-1978 $xBibliography.61020$6880-06$aZhongguo gong chan dang $xHistory.88024$6610-06/$1$a中国共产党$xHistory. 650#0$6880-06$aRural development$zChina $zFengyang Xian.651#0$6880-07$aFengyang Xian(China) $xRural conditions.880#4$6650-06/$1$aRural development $zChina$z鳳陽縣.880#4$6651-07/$1$a鳳陽縣(China)$xRu⁃ral conditions.3　MARC21中文书目记录的主要特点通过多文种连接就构成一条完整的MARC21中文书目记录㊂其主要特点有:　3.1　注意语种地理代码　一般情况下,只需在040字段$b子字段反映编目语种即可,不用在041字段$a子字段反映所编文献正文语种㊂只有当文献中出现一种以上的文字或者编目文献是译著时,才使用041字段㊂同样,只有在出现651字段地理主题标目或6XX 字段中出现|z地理主题复分时,才在043字段反映有关的地理区域代码[3]㊂　3.2　对应字段必须连接　中文与拼音对应字段必须连接(Link),才能使同一条记录中的有关字段能用不同的文种重复,中文信息才能显示;才能既满足国外读者的检索需求,又方便对中文文献的使用㊂文种识别代码可灵活用在各880字段的$6子字段上㊂它能使同一条记录中的有关字段能用不同的文种重复,以一条书目记录生成两条不同文种的书目记录㊂若用户采用880字段的中文检索,则显示时可看到这条记录的中文形式;而若用户使用拉丁文界面或只有拉丁文界面时,也可看到这条记录用罗马化字符表示的拉丁文形式㊂　3.3　正确选取主要款目　主要款目是AACR2特别强调的一个款目,它是在题名款目和责任者款目中选定一个最主要的,将其著录成最完备的款目,放在所有变长字段之首,而成为整个数据中最重要的字段㊂CNMARC一般以题名作为主要款目,MARC21一般以责任者为主要款目㊂主要款目的选取㊁著录比较复杂,ISBD最新修订版中规定主要款目可以是个人责任者㊁团体责任者㊁会议名称㊁题名或统一题名,分别著于100㊁110㊁111㊁245㊁130字段,按如下顺序选取:名称主要款目:MARC21对个人㊁团体㊁会议名称主要款目的选取是以是否对作品的内容负有主要责任为标准的,因此中文文献中常用的著”㊁撰”㊁主编”等著作方式的责任者做主要款目,而编”㊁编辑”㊁译”等著作方式的责任者不做主要款目,应入附加款目即700/710/711字段㊂除第一位主要责任者以外的其他主要责任者也不做主要款目㊂题名主要款目:当文献没有个人主要责任者,也没有团体主要责任者,也非会议文献时,或者主要责任者超过三个时,则以题名作为主要款目㊂不过文献有统一题名时则以统一题名为主要款目,入130字段㊂　3.4　正确使用标点符号　书目数据的子字段前及字段结束有标点,这是MARC21与CNMARC的重要差别㊂因此,尽管是著录中文文献,仍需严格遵守标点使用规则㊂主要的标点符号有(均为英文半角状态):245字段:其他题名信息前用 :(冒号)”分隔,并列题名前用 =(等号)”,第一责任者前用 /(斜杠)”,㊃971㊃　第3期张明东:境外合作编目中的MARC21中文书目记录解析同一责任方式的责任者之间用 ,(逗号)”,不同责任方式的责任者之间用 ;(分号)”,分辑号前用 .(下圆点)”,分辑题名前用 ,(逗号)”,若无分辑号分辑题名前用 .(下圆点)”,同一责任者的合订题名间用;(分号)”,不同责任者的合订题名间用 .(下圆点)”㊂260字段:出版者前用 :(冒号)”,出版年前用 , (逗号)”㊂300字段:其他形态细节前用 :(冒号)”,尺寸前用 ;(分号)”,附件前用 +(加号)”㊂主要款目标目和附加款目:与名称相连的日期前用 ,(逗号)”,团体下属单位前用 .(下圆点)”,会议时间和地点前用 :(冒号)”㊂505字段:分卷(章节)题名之间用 --(双横杠)”㊂字段结束符为 .(下圆点)”,246变异题名字段和490丛编说明字段无结束符;有结束符的字段若最后以 )(后括弧)”㊁ ](后中括弧)”㊁ -(单横杠)”结尾,不再加 .”为结束符(245字段除外)㊂4　新罗马化拼音准则分析编制MARC21中文记录还有一个很重要的方面就是对新罗马化拼音准则的掌握㊂新罗马化拼音是国际图联规定的在中文文献著录时使用的字符,1998年美国国会图书馆推出‘美国国会图书馆拼音转换计划:新汉语罗马化准则“(Library of Congress Pinyin Conversion Project:New Chinese Romanization Guide⁃lines),成为中文文献国际化所采用的拼音准则㊂这个准则是以我国1962年版的‘汉语拼音方案“为基础,以标准普通话发音为依据[4]㊂其主要内容有:　4.1　音节区分　将音节加以区分,即用空格来区分每个汉语字符的罗马化表示(包括团体名称)[4]㊂如:寻求历史的谜底,罗马化表示为Xun qiu li shi de mi di叶嘉莹说杜甫诗,表示为Ye Jiaying shuo Du Fu shi四川苗族史,表示为Sichuan Miao zu shi商务印书馆,表示为Shang wu yin shu guan中华书局,表示为Zhonghua shu ju区分音节有利于汉语文本的检索,也有利于汉语书目数据的国际交换㊂　4.2　非汉语来源词　对非汉语来源的词一律系统地进行罗马化,即使有些词已经是大家熟知的,或者有些词来自于拉丁文字,也要进行罗马化㊂如:华盛顿,表示为Huashengdun(而非Washington)伦敦,表示为Lundon(而非London)　4.3　特殊字符　拼音罗马化中特殊字符的数目减少为仅有两个:撇号和分音符号㊂这两个符号很少被用到,撇号用在连写的音节需要区分时,如含有无声母而以元音字母开头的字Xi’an(西安);分音符号用来区分lu和lü, nu和nü这两组音节[4]㊂　4.4　名称称谓　对专用人名㊁团体名㊁地名㊁称谓等的拼音表示形式做了十分详细的规定㊂4.4.1　人名:将具有多个字符的姓和多个字符的名字进行连写,不能使用空格和连字符㊂简单来说,就是姓名分写,姓前名后,复姓连写,名字连写,姓和名的首字母分别大写㊂同样地,超过一个音节的假名㊁佛教名字㊁礼仪名宇等应该连写㊂笔名(含艺名㊁网名等)㊁皇帝谥号与庙号的处理同真名[5]㊂如:张自忠,表示为Zhang Zizhong司马昭,表示为Sima Zhao玄奘,表示为Xuanzang克林顿,表示为Kelindun无名氏,表示为Wumingshi弘一法师,表示为Hongyi fa shi茅盾,表示为Mao Dun六小龄童,表示为Liuxiaolingtong汉武帝,表示为Han Wudi唐高宗,表示为Tang Gaozong4.4.2　团体名:专有名词连写,首字母大写㊂除了名称中包含的地名㊁个人名称和各民族名称外,其他无论是实词还是虚词,都按单字拼音,拼音字母采取小写形式㊂如:北京大学,表示为Beijing da xue美国民主党,表示为Meiguo min zhu dang 4.4.3　地名:具有多个字符的地名连写,不使用空格和连字符,以词的形式出现;具有管辖范围的和具有地形特征的属类词与地名不连写,而使用空格加以区分㊂简单来说,就是专名和通名分写,某些通名已经成为专名的一部分,则和专名连写[5]㊂如:中国,表示为Zhongguo兰州市,表示为Lanzhou Shi福建省,表示为Fujian Sheng宁夏回族自治区,表示为Ningxia Huizu Zizhiqu武夷山,表示为Wuyi Shan扬子江,表示为Yangzi Jiang黑龙江,表示为Heilong Jiang黑龙江省,表示为Heilongjiang Sheng㊃081㊃情　报　杂　志第30卷洛杉矶市,表示为Luoshanji Shi相同拼写词的区分,Shanxi山西㊁Shaanxi陕西4.4.4　群体名:将构成人类种族㊁语言学和部落群体的名字的两个或更多个字符的音译连写㊂即专名连写,与通名分开㊂如:马来人,表示为Malai ren客家话,表示为Kejia hua景颇族,表示为Jingpo zu什叶派,表示为Shiye pai基督徒,表示为Jidu tu公安派,表示为Gong’an pai4.4.5　隔音符号:在组合的音节中如果第二个音节是以字母a㊁e和o开头的,那么在第二个音节前加隔音符号㊂另外,如果第一个音节是以字母n结尾的㊁第二个音节是以字母g开始的话,那么在这组合的两个音节之间也要加上隔音符号[4]㊂如:延安市,表示为Yan’an Shi(而不是Yanan Shi)张俊娥,表示为Zhang Jun’e(而不是Zhang June)朴振纲,表示为Piao Zhen’gang(而不是Piao Zhengang)　4.5　大写字母专有名词:专有名词的第一个词的首字母大写㊂团体名称:团体名称的第一个词的首字母大写;其下属单位与其上一级的名称连写在一起,并且这个下属单位作标目时,其第一个词的首字母也应大写[4]㊂地理名称:地名的每一个分写的词的首字母大写㊂朝代名称:中国朝代名称的第一个字的首字母大写㊂题名:题名的第一个字的首字母大写㊂　4.6　标点符号中圆点:将居于中心位置的表示联合词的圆点转换为逗号,将居于中心位置的表示空格的圆点转换为空格[4]㊂如:和平㊃民主㊃救中国,表示为He ping,min zhu, jiu Zhongguo巴拉克㊃H㊃奥巴马,表示为Balake H Aobama括号与顿号:将当作单引号使用的方括号或者三角括号,转换成单引号;顿号转换为逗号㊂如:高考X[政㊁史㊁地㊁文科综合]解题技法,表示为Gao kao X(zheng,shi,di,wen ke zong he)jie ti ji fa 4.7　日期非数字日期:将非数字日期的罗马化写成分开的音节,但是皇帝年号需要连写[4]㊂如:宣统辛亥[1911],表示为Xuantong xin hai [1911]明万历48年[1620],表示为Ming Wanli48nian [1620]民国纪年:民国作为纪年时,写成分开的音节㊂如:民国34[1945],表示为Min guo34[1945]民国三十七年,表示为Min guo san shi qi nian公元纪年:公元纪年写成分开的音节㊂如:一九七八年,表示为yi jiu qi ba nian5　结　语编制出合格的MARC21中文记录,可以通过这个中介把输出中文图书的业务推进到一个新的高度,让中文文献直接面对各国读者;可以消除语言障碍,在英语优势的环境下将中文与各国语言直接对应;更为重要的是,可以消除文化障碍,通过数据资源整合推动中国文化走向世界,促进中外文化交流㊂这些都有助于进一步提高我国文献资源体系的服务质量,提升中华文明的辐射力㊂参考文献[1]　王松林.MARC21中的多文种记录[J].大学图书馆学报,2002,20(6):73-76[2]　陈　颖.提高书目数据质量促进境外合作编目发展[J].图书馆学刊,2010,32(2):99-101[3]　赵晨洁.使用USMARC进行著录的若干疑问及解析[J].图书馆学研究,2005(4):52-54[4]　刘静一.中文数据库检索技术研究的一项新内容:兼谈‘美国国会图书馆拼音转换计划:新汉语罗马化准则“的诞生及其主要内容[J].情报学报,2003,22(2):155-162[5]　谢勤芳.CALIS联机合作编目手册(下)[M].北京:北京大学出版社,2000:54-77(责编:王平军)㊃181㊃　第3期张明东:境外合作编目中的MARC21中文书目记录解析。

BAV20WS-V中文资料

BAV19WS-V/20WS-V/21WS-VDocument Number 85726Rev. 1.4, 31-Jul-06Vishay Semiconductors120145Small Signal Switching Diodes, High VoltageFeatures•Silicon Epitaxial Planar Diodes •For general purpose•These diodes are also available in othercase styles including: the DO35 case with the type designation BAV19 - BAV21, the MiniMELF case with the type designation BAV100 - BAV103, the SOT23 case with the type designation BAS19 -BAS21 and the SOD123 case with the type desig-nation BAV19W-V - BAV21W-V •Lead (Pb)-free component•Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/ECMechanical DataCase: SOD323 Plastic case Weight: approx. 5.0 mgPackaging Codes/Options:GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/3 k per 7" reel (8 mm tape), 15 k/boxParts TablePartT ype differentiation Ordering codeType MarkingRemarks BAV19WS-V V R = 100 V BAV19WS-V-GS18 or BAV19WS-V-GS08A8Tape and Reel BAV20WS-V V R = 150 V BAV20WS-V-GS18 or BAV20WS-V-GS08A9Tape and Reel BAV21WS-VV R = 200 VBAV21WS-V-GS18 or BAV21WS-V-GS08AATape and Reel 2Document Number 85726Rev. 1.4, 31-Jul-06BAV19WS-V/20WS-V/21WS-VVishay Semiconductors Absolute Maximum RatingsT amb = 25°C, unless otherwise specified1) Valid provided that leads are kept at ambient temperatureThermal CharacteristicsT amb = 25°C, unless otherwise specified1) Valid provided that leads are kept at ambient temperatureElectrical CharacteristicsT amb = 25°C, unless otherwise specifiedParameterTest conditionPart Symbol Value Unit Continuous reverse voltageBAV19WS-V V R 100V BAV20WS-V V R 150V BAV21WS-VV R 200V Repetitive peak reverse voltageBAV19WS-V V RRM 120V BAV20WS-V V RRM 200V BAV21WS-VV RRM 250V Forward continuous currentT amb = 25°CI F 2501)mA Rectified current (average) half wave rectification with resist. loadT amb = 25°C I F(AV)2001)mARepetitive peak forward current f ≥ 50 Hz, θ = 180°, T amb = 25°C I FRM 6251)mA Surge forward current t < 1 s, T j = 25°C I FSM 1A Power dissipationT amb = 25°CP tot2001)mWParameterTest condition Symbol Value Unit Thermal resistance junction to ambient airR thJA 6501)K/W Junction temperature T j 1501)°C Storage temperature rangeT stg- 65 to + 1501)°CParameterTest conditionPartSymbol MinTyp.Max Unit Forward voltage I F = 100 mA V F 1.00V I F = 200 mA V F 1.25V Leakage currentV R = 100 VBAV19WS-V I R 100nA V R = 100 V , T j = 100°C BAV19WS-V I R 15µA V R = 150 VBAV20WS-V I R 100nA V R = 150 V , T j = 100°C BAV20WS-V I R 15µA V R = 200 VBAV21WS-V I R 100nA V R = 200 V , T j = 100°CBAV21WS-VI R 15µA Dynamic forward resistance I F = 10 mA r f 5ΩDiode capacitance V R = 0, f = 1 MHz C D 1.5pF Reverse recovery timeI F = 30 mA, I R = 30 mA, I rr = 3 mA, R L = 100 Ωt rr50nsBAV19WS-V/20WS-V/21WS-VDocument Number 85726Rev. 1.4, 31-Jul-06Vishay Semiconductors3Typical CharacteristicsT amb = 25°C, unless otherwise specifiedFigure 1. Forward Current vs. Forward Voltage Figure 2. Admissible Forward Current vs. Ambient Temperature Figure 3. Admissible Power Dissipation vs. Ambient Temperature 18858I - F o r w a r d C u r r e n t (m A )F V F - For w ard V oltage (V )30609012015018859T am b - Am b ient Temperat u re (°C)I ,I - A d m i s s i b l e F o r w a r d C u r r e n t (A )O F 20018864T am b - Am b ient Temperat u re (°C)250200150100502040608010012014016018000P - A d m i s s i b l e P o w e r D i s s i p a t i o n (W )t o t Figure 4. Dynamic Forward Resistance vs. Forward CurrentFigure 5. Leakage Current vs. Junction TemperatureFigure 6. Capacitance vs. Reverse Voltager -D y n a m i c F o r w a r d R e s i s t a n c e f (Ω)10100111001018861I F - For w ard C u rrent (mA)0.118862110100100020406080100120140160180200I (T )/I (25 °C ) - L e a k a g e C u r r e n tR R j T j - J u nction Temperat u re (°C)Re v erse V oltageBA V 19W S-V V = 100 V R BA V 20W S-V V =150V R BA V 21W S-V V =200VR 188631100.10.80.60.41.41.21.00.20100C -D i o d e C a p a c i t a n c e (p F )D V R - Re v erse V oltage (V )2.01.81.6=25°CT j 4Document Number 85726Rev. 1.4, 31-Jul-06BAV19WS-V/20WS-V/21WS-V Vishay SemiconductorsPackage Dimensions in mm (Inches): SOD323BAV19WS-V/20WS-V/21WS-VDocument Number 85726Rev. 1.4, 31-Jul-06Vishay Semiconductors5Ozone Depleting Substances Policy StatementIt is the policy of Vishay Semiconductor GmbH to1.Meet all present and future national and international statutory requirements.2.Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.We reserve the right to make changes to improve technical designand may do so without further notice.Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personaldamage, injury or death associated with such unintended or unauthorized use.Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, GermanyDocument Number: 91000Revision: 18-Jul-081DisclaimerLegal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件交易网。

BAV21W

IFSM
IFRM Pd
RθJA
TSTG
BAV19W 120
100
71
BAV20W 200
150
106 400 200 2.5 0.5 625 500 250 -55~+150
Electrical Ratings @Ta=25℃
Parameter
Symbol Min
Typ
Forward voltage Reverse current
【领先的片式无源器件整合供应商—南京南山半导体有限公司】

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-123 Plastic-Encapsulate Diodes
BAV19W/BAV20W/BAV21W
FAST SWITCHING DIODE
全符合要求，也不承诺一定按期交出。
跟进记录
□已联系客户
□ 已中止进行 □ 已建议生产
□ 中止原因描述： □ 已发送样品/日期
□ 客户已签收/日期
第1页共1页
总机：025-52188228 技术支持：025-84712971 客服：400-888-5058 传真：025-84710486 电邮：Tech@
客户基本资料
公司名称联系方式收货地址生产产品
联络人
电话：
姓名：电话：
传真：
职务：手机：
网址： □生产型企业
□贸易商
□技术电邮：
□采购
□其他
样品明细资料
元器件名称型号及封装
单机用量申请数量备注
预计生产情况
预计小批量生产日期：
规模生产日期全面、真实填写上列各项。表格不够填写，可自行复制。 2、请以附件的形式将该文档通过 E-mail 发送，并请将此单打印盖章后，传真至：025-84710486。 3、公司将根据客户所填信息并综合相关情况，由样品小组负责确定该样品申请单是否执行及如何执行。 4、收到样品申请单并经审核通过后，南京库有现货2个工作日内发出；如需订货，交期3-4周，非常规品顺延1-2周。 5、样品免费，运费到付(一般选择顺丰快递)；样品数量：单个型号5～20pcs，或根据 BOM 表清单按2～5套提供。 6、说明：接单后，样品小组将努力跟进，但由于原厂生产等环节存有不确定因素，我们无法保证样品数量、型号完

BAS21W,115;BAS21AW,115;BAS21SW,115;中文规格书,Datasheet资料

High-voltage switching diodes
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter
Per device
Rth(j-a)
thermal resistance from junction to ambient
[1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
5. Limiting values
Marking code[1] X4* X6* X5*
Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
150
200
250
VR (V)
(1) Tamb = 150 °C (2) Tamb = 85 °C (3) Tamb = 25 °C (4) Tamb = −40 °C
Fig 3. Reverse current as a function of reverse voltage; typical values
1.3 Applications
I High-speed switching I General-purpose switching
I Voltage clamping I Reverse polarity protection
1.4 Quick reference data
Table 2. Quick reference data