CY7C1383F-100BGC资料

18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
CY7C1381D, CY7C1381F CY7C1383D, CY7C1383F
Features
•Supports 133 MHz bus operations •512K × 36 and 1M × 18 common IO •3.3V core power supply (V DD )•2.5V or 3.3V IO supply (V DDQ )•Fast clock-to-output time —6.5 ns (133 MHz version)
•Provides high performance 2-1-1-1 access rate
•User selectable burst counter supporting Intel ® Pentium ® interleaved or linear burst sequences
•Separate processor and controller address strobes •Synchronous self-timed write •Asynchronous output enable
•CY7C1381D/CY7C1383D available in JEDEC-standard Pb-free 100-pin TQFP , Pb-free and non Pb-free 165-ball FBGA package. CY7C1381F/CY7C1383F available in Pb-free and non Pb-free 119-ball BGA package •IEEE 1149.1 JTAG-Compatible Boundary Scan •ZZ sleep mode option
Functional Description [1]
The CY7C1381D/CY7C1383D/CY7C1381F/CY7C1383F is a 3.3V, 512K x 36 and 1M x 18 synchronous flow through SRAMs, designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133 MHz version). A 2-bit on-chip counter captures the first address in a burst and increments the address automatically for the rest of the burst access. All synchronous inputs are gated by registers controlled by a positive edge triggered clock input (CLK). The synchronous inputs include all addresses, all data inputs,address pipelining chip enable (CE 1), depth-expansion chip enables (CE 2 and CE 3 [2]), burst control inputs (ADSC, ADSP ,and ADV), write enables (BW x , and BWE), and global write (GW). Asynchronous inputs include the output enable (OE)and the ZZ pin.
The CY7C1381D/CY7C1383D/CY7C1381F/CY7C1383F allows interleaved or linear burst sequences, selected by the MODE input pin. A HIGH selects an interleaved burst sequence, while a LOW selects a linear burst sequence. Burst accesses can be initiated with the processor address strobe (ADSP) or the cache controller address strobe (ADSC) inputs.Address advancement is controlled by the address advancement (ADV) input.
Addresses and chip enables are registered at rising edge of clock when address strobe processor (ADSP) or address strobe controller (ADSC) are active. Subsequent burst addresses can be internally generated as controlled by the advance pin (ADV).
The CY7C1381D/CY7C1383D/CY7C1381F/CY7C1383F operates from a +3.3V core power supply while all outputs operate with a +2.5V or +3.3V supply. All inputs and outputs are JEDEC-standard and JESD8-5-compatible.
Selection Guide
133 MHz
100 MHz Unit Maximum Access Time 6.58.5ns Maximum Operating Current 210175mA Maximum CMOS Standby Current
70
70
mA
Notes:
1.For best practices or recommendations, please refer to the Cypress application note AN1064, SRAM System Design Guidelines on .
2.CE 3, CE 2 are for TQFP and 165 FBGA packages only. 119 BGA is offered only in 1 chip enable.
CY7C1381D, CY7C1381F
CY7C1383D, CY7C1383F
Logic Block Diagram – CY7C1381D/CY7C1381F [3](512K x 36) Array
Logic Block Diagram – CY7C1383D/CY7C1383F[3] (1M x 18)
Note:
3.CY7C1381F and CY7C1383F have only 1 chip enable (CE1).
CY7C1381D, CY7C1381F CY7C1383D, CY7C1383F
Pin Configurations
A A A A A 1
A 0
N C N C V S S
V D D
A A A A A A A A
DQP B DQ B DQ B V DDQ V SSQ DQ B DQ B DQ B DQ B V SSQ V DDQ DQ B DQ B V SS NC V DD ZZ DQ A DQ A V DDQ V SSQ DQ A DQ A DQ A DQ A V SSQ V DDQ DQ A DQ A DQP A
DQP C DQ C DQ C V DDQ V SSQ DQ C DQ C DQ C DQ C V SSQ V DDQ DQ C DQ C V DD NC V SS DQ D DQ D V DDQ V SSQ DQ D DQ D DQ D DQ D V SSQ V DDQ DQ D DQ D DQP D
A A C E 1
C E 2
B W D
B W C
B W B
B W A
C E 3
V D D
V S S
C L K G W B W E O E A
D S C A D S P A D V A A
123456789101112131415161718192021222324252627282930
313233343536373839404142434445464748495080797877767574737271706968676665646362616059585756555453525110099989796959493929190898887868584838281
M O D E CY7C1381D (512K x 36)
V SS /DNU
A A A A A 1
A 0
N C N C V S S
V D D
A A A A A A A A
A NC NC V DDQ V SSQ NC DQP A DQ A DQ A V SSQ V DDQ DQ A DQ A V SS NC V DD ZZ DQ A DQ A V DDQ V SSQ DQ A DQ A NC NC V SSQ V DDQ NC NC NC
NC NC NC V DDQ V SSQ NC NC DQ B DQ B V SSQ V DDQ DQ B DQ B V DD NC V SS DQ B DQ B V DDQ V SSQ DQ B DQ B DQP B
NC V SSQ V DDQ NC NC NC
A A C E 1
C E 2
N C N C B W B
B W A
C E 3
V D D
V S S
C L K G W B W E O E A
D S C A D S P A D V A A
123456789101112131415161718192021222324252627282930
3132333435363738394041424344454647484950
80797877767574737271706968676665646362616059585756555453525110099989796959493929190898887868584838281
M O D E CY7C1383D (1M x 18)
V SS /DNU
100-pin TQFP Pinout (3 Chip Enable)
A A
CY7C1381D, CY7C1381F
CY7C1383D, CY7C1383F Pin Configurations (continued)
234567
1
A B C D E F G H J K L M N P R T U
V DDQ
NC/288M
NC/144M
DQP C
DQ C
DQ D
DQ C
DQ D
A A A A
ADSP V DDQ
A A
DQ C
V DDQ
DQ C
V DDQ
V DDQ
V DDQ
DQ D
DQ D
NC
NC
V DDQ
V DD
CLK
V DD
V SS
V SS
V SS
V SS
V SS
V SS
V SS
V SS
NC/576M
NC/1G
NC
NC
TDO
TCK
TDI
TMS
NC/36M
NC/72M
NC
V DDQ
V DDQ
V DDQ
A A A
A
A
A
A
A
A
A
A
A0
A1
DQ A DQ C
DQ A
DQ A
DQ A
DQ B
DQ B
DQ B
DQ B
DQ B
DQ B
DQ B
DQ A
DQ A
DQ A
DQ A
DQ B
V DD
DQ C
DQ C
DQ C
V DD
DQ D
DQ D
DQ D
DQ D
ADSC
NC
CE1
OE
ADV
GW
V SS
V SS
V SS
V SS
V SS
V SS
V SS
V SS DQP A
MODE
DQP D
DQP B
BW B
BW C
NC V DD NC
BW A
NC
BWE
BW D
ZZ
234567 1
A B C D E F G H J K L M N P R T U
V DDQ
NC/288M
NC/144M
NC
DQ B
DQ B
DQ B
DQ B
A A A A
ADSP V DDQ
A A
NC
V DDQ
NC
V DDQ
V DDQ
V DDQ
NC
NC
NC
NC/72M
V DDQ
V DD
CLK
V DD
V SS
V SS
V SS
V SS
V SS
V SS
V SS
V SS
NC/576M
NC/1G
NC
NC
TDO
TCK
TDI
TMS
A
A
NC
V DDQ
V DDQ
V DDQ
A NC/36M A
A
A
A
A
A
A
A
A
A0
A1
DQ A DQ B
NC
NC
DQ A
NC
DQ A
DQ A
NC
NC
DQ A
NC
DQ A
NC
DQ A
NC
DQ A
V DD
NC
DQ B
NC
V DD
DQ B
NC
DQ B
NC
ADSC
NC
CE1
OE
ADV
GW
V SS
V SS
V SS
V SS
V SS
V SS
V SS
V SS NC
MODE
DQP B
DQP A
NC
BW B
NC V DD NC
BW A
NC
BWE
NC
ZZ
CY7C1383F (1M x 18)
CY7C1381F (512K x 36)
119-Ball BGA Pinout
CY7C1381D, CY7C1381F
CY7C1383D, CY7C1383F Pin Configurations (continued)
165-Ball FBGA Pinout (3 Chip Enable)
CY7C1381D (512K x 36)
234567
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P R
TDO
NC/288M
NC/144M
DQP C
DQ C
DQP D
NC
DQ D
CE1BW B CE3
BW C BWE
A CE2
DQ C
DQ D
DQ D
MODE
NC
DQ C
DQ C
DQ D
DQ D
DQ D
NC/36M
NC/72M
V DDQ
BW D BW A CLK GW
V SS V SS V SS V SS
V DDQ V SS
V DD V SS
V SS
V SS
V SS
V SS
V SS
V DDQ
V DDQ
NC
V DDQ
V DDQ
V DDQ
V DDQ
A
A
V DD V SS
V DD V SS V SS
V DDQ V DD
V SS
V DD
V SS
V DD V SS V SS
V SS
V DD
V DD V SS
V DD V SS V SS
NC
TCK
V SS
TDI
A
A
DQ C V SS
DQ C V SS
DQ C
DQ C
NC
V SS
V SS
V SS
V SS
NC
V SS
A1
DQ D
DQ D
NC
NC
V DDQ
V SS
TMS
891011
A
ADV A
ADSC NC
OE ADSP A NC/576M
V SS V DDQ NC/1G DQP B
V DDQ
V DD DQ B
DQ B
DQ B
NC
DQ B
NC
DQ A
DQ A
V DD V DDQ
V DD V DDQ DQ B
V DD
NC
V DD
DQ A
V DD V DDQ DQ A
V DDQ
V DD
V DD V DDQ
V DD V DDQ DQ A
V DDQ
A
A
V SS
A
A
A
DQ B
DQ B
DQ B
ZZ
DQ A
DQ A
DQP A
DQ A
A
V DDQ
A
CY7C1383D (1M x 18)
A0
A
V SS
234567
1
A B C D E F G H J K L M N
P R
TDO
NC/288M
NC/144M
NC
NC
DQP B
V SS
DQ B
A CE1NC CE3
BW B BWE
A CE2
NC
DQ B
DQ B
MODE
NC
DQ B
DQ B
NC
NC
NC
NC/36M
NC/72M
V DDQ
NC BW A CLK GW
V SS V SS V SS V SS
V DDQ V SS
V DD V SS
V SS
V SS
V SS
V SS
V SS
V SS
V DDQ
V DDQ
NC
V DDQ
V DDQ
V DDQ
V DDQ
A
A
V DD V SS
V DD V SS V SS
V DDQ V DD
V SS
V DD
V SS
V DD V SS V SS
V SS
V DD
V DD V SS
V DD V SS V SS
NC
TCK
A0
V SS
TDI
A
A
DQ B V SS
NC V SS
DQ B
NC
NC
V SS
V SS
V SS
V SS
NC
V SS
A1
DQ B
NC
NC
NC
V DDQ
V SS
TMS
891011
A
ADV A
ADSC A
OE ADSP A NC/576M
V SS V DDQ NC/1G DQP A
V DDQ
V DD NC
DQ A
DQ A
NC
NC
NC
DQ A
NC
V DD V DDQ
V DD V DDQ DQ A
V DD
NC
V DD
NC
V DD V DDQ DQ A
V DDQ
V DD
V DD V DDQ
V DD V DDQ NC
V DDQ
A
A
V SS
A
A
A
DQ A
NC
NC
ZZ
DQ A
NC
NC
DQ A
A
V DDQ
A
A
A
CY7C1381D, CY7C1381F
CY7C1383D, CY7C1383F
Pin Definitions
Name IO Description
A0, A1, A Input-
Synchronous Address inputs used to select one of the address location s. Sampled at the rising edge of the CLK if ADSP or ADSC is active LOW, and CE1,CE2, and CE3 [2] are sampled active. A[1:0] feed the 2-bit counter.
BW A, BW B BW C, BW D
Input-
Synchronous
Byte write select inputs, active LOW. Qualified with BWE to conduct byte writes to the
SRAM. Sampled on the rising edge of CLK.
GW Input-
Synchronous Global write enable input, active LOW. When asserted LOW on the rising edge of CLK, a global write is conducted (all bytes are written, regardless of the values on BW[A:D] and BWE).
CLK Input-
Clock Clock input. Used to capture all synchronous inputs to the device. Also used to increment the burst counter when ADV is asserted LOW, during a burst operation.
CE1Input-
Synchronous Chip enable 1 input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE2 and CE3 [2] to select or deselect the device. ADSP is ignored if CE1 is HIGH. CE1 is sampled only when a new external address is loaded.
CE2Input-
Synchronous Chip enable 2 input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction with CE1 and CE3 [2] to select or deselect the device. CE2 is sampled only when a new external address is loaded.
CE3 [2]Input-
Synchronous Chip enable 3 input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE1 and CE2 to select or deselect the device. CE3 is sampled only when a new external address is loaded.
OE Input-
Asynchronous Output enable, asynchronous input, active LOW. Controls the direction of the IO pins. When LOW, the IO pins behave as outputs. When deasserted HIGH, IO pins are tri-stated, and act as input data pins. OE is masked during the first clock of a read cycle when emerging from a deselected state.
ADV Input-
Synchronous Advance input signal. Sampled on the rising edge of CLK. When asserted, it automatically increments the address in a burst cycle.
ADSP Input-
Synchronous Address strobe from processor, sampled on the rising edge of CLK, active LOW. When asserted LOW, addresses presented to the device are captured in the address registers. A[1:0] are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recognized. ASDP is ignored when CE1 is deasserted HIGH.
ADSC Input-
Synchronous Address strobe from controller, sampled on the rising edge of CLK, active LOW. When asserted LOW, addresses presented to the device are captured in the address registers. A[1:0] are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recognized.
BWE Input-
Synchronous Byte write enable input, active LOW. Sampled on the rising edge of CLK. This signal must be asserted LOW to conduct a byte write.
ZZ Input-
Asynchronous ZZ sleep input. This active HIGH input places the device in a non-time critical sleep condition with data integrity preserved. For normal operation, this pin has to be LOW or left floating. ZZ pin has an internal pull down.
DQ s IO-
Synchronous Bidirectional data IO lines. As inputs, they feed into an on-chip data register that is triggered by the rising edge of CLK. As outputs, they deliver the data contained in the memory location specified by the addresses presented during the previous clock rise of the read cycle. The direction of the pins is controlled by OE. When OE is asserted LOW, the pins behave as outputs. When HIGH, DQ s and DQP X are placed in a tri-state condition.The outputs are automatically tri-stated during the data portion of a write sequence, during the first clock when emerging from a deselected state, and when the device is deselected, regardless of the state of OE.
DQP X IO-
Synchronous Bidirectional data parity IO lines. Functionally, these signals are identical to DQ s.During write sequences, DQP X is controlled by BW X correspondingly.
CY7C1381D, CY7C1381F CY7C1383D, CY7C1383F
Functional Overview
All synchronous inputs pass through input registers controlled by the rising edge of the clock. Maximum access delay from the clock rise (t CDV ) is 6.5 ns (133 MHz device).
The CY7C1381D/CY7C1383D/CY7C1381F/CY7C1383F supports secondary cache in systems utilizing a linear or interleaved burst sequence. The interleaved burst order supports Pentium ® and i486™ processors. The linear burst sequence is suited for processors that utilize a linear burst sequence. The burst order is user selectable, and is determined by sampling the MODE input. Accesses can be initiated with the processor address strobe (ADSP) or the controller address strobe (ADSC). Address advancement through the burst sequence is controlled by the ADV input. A two-bit on-chip wraparound burst counter captures the first address in a burst sequence and automatically increments the address for the rest of the burst access.
Byte write operations are qualified with the byte write enable (BW E ) and byte write select (BW X ) inputs. A global write enable (GW) overrides all byte write inputs and writes data to all four bytes. All writes are simplified with on-chip synchronous self-timed write circuitry.
Three synchronous chip selects (CE 1, CE 2, CE 3 [2]) and an asynchronous output enable (OE) provide for easy bank
selection and output tri-state control. ADSP is ignored if CE 1is HIGH.
Single Read Accesses
A single read access is initiated when the following conditions are satisfied at clock rise: (1) CE 1, CE 2, and CE 3 [2] are all asserted active, and (2) ADSP or ADSC is asserted LOW (if the access is initiated by ADSC, the write inputs must be deasserted during this first cycle). The address presented to the address inputs is latched into the address register and the burst counter and/or control logic, and later presented to the memory core. If the OE input is asserted LOW, the requested data will be available at the data outputs with a maximum to t CDV after clock rise. ADSP is ignored if CE 1 is HIGH.Single Write Accesses Initiated by ADSP
This access is initiated when the following conditions are satisfied at clock rise: (1) CE 1, CE 2, CE 3 [2] are all asserted active, and (2) ADSP is asserted LOW. The addresses presented are loaded into the address register and the burst inputs (GW, BW E , and BW X ) are ignored during this first clock cycle. If the write inputs are asserted active (see Truth Table for Read/Write [4, 9] on page 10 for appropriate states that indicate a write) on the next clock rise, the appropriate data will be latched and written into the device. Byte writes are allowed.All IOs are tri-stated during a byte write. As this is a common IO device, the asynchronous OE input signal must be
MODE
Input-Static
Selects burst order . When tied to GND selects linear burst sequence. When tied to V DD or left floating selects interleaved burst sequence. This is a strap pin and must remain static during device operation. Mode pin has an internal pull up.V DD Power Supply
Power supply inputs to the core of the device .
V DDQ IO Power Supply Power supply for the IO circuitry .
V SS Ground Ground for the core of the device . V SSQ IO Ground
Ground for the IO circuitry .
TDO
JTAG serial output Synchronous Serial data-out to the JTAG circuit . Delivers data on the negative edge of TCK. If the JTAG feature is not being utilized, this pin can be left unconnected. This pin is not available
on TQFP packages.TDI
JTAG serial input Synchronous Serial data-in to the JTAG circuit . Sampled on the rising edge of TCK. If the JTAG feature is not being utilized, this pin can be left floating or connected to V DD through a pull up
resistor. This pin is not available on TQFP packages.TMS
JTAG serial input Synchronous Serial data-in to the JTAG circuit . Sampled on the rising edge of TCK. If the JTAG feature is not being utilized, this pin can be disconnected or connected to V DD . This pin is not
available on TQFP packages.
TCK JTAG-Clock Clock input to the JTAG circuitry . If the JTAG feature is not being utilized, this pin must be connected to V SS . This pin is not available on TQFP packages.
NC –No connects . Not internally connected to the die. 36M, 72M, 144M, 288M, 576M, and 1G are address expansion pins and are not internally connected to the die.V SS /DNU
Ground/DNU
This pin can be connected to ground or can be left floating.
Pin Definitions (continued)
Name IO Description
CY7C1381D, CY7C1381F CY7C1383D, CY7C1383F
deasserted and the IOs must be tri-stated prior to the presen-tation of data to DQs. As a safety precaution, the data lines are tri-stated once a write cycle is detected, regardless of the state of OE.
Single Write Accesses Initiated by ADSC
This write access is initiated when the following conditions are satisfied at clock rise: (1) CE1, CE2, and CE3 [2] are all asserted active, (2) ADSC is asserted LOW, (3) ADSP is deasserted HIGH, and (4) the write input signals (GW, BWE, and BW X) indicate a write access. ADSC is ignored if ADSP is active LOW.
The addresses presented are loaded into the address register and the burst counter, the control logic, or both, and delivered to the memory core The information presented to DQ[A:D] will be written into the specified address location. Byte writes are allowed. All IOs are tri-stated when a write is detected, even a byte write. Since this is a common IO device, the asynchronous OE input signal must be deasserted and the IOs must be tri-stated prior to the presentation of data to DQ s. As a safety precaution, the data lines are tri-stated once a write cycle is detected, regardless of the state of OE.
Burst Sequences
The CY7C1381D/CY7C1383D/CY7C1381F/CY7C1383F provides an on-chip two-bit wraparound burst counter inside the SRAM. The burst counter is fed by A[1:0], and can follow either a linear or interleaved burst order. The burst order is determined by the state of the MODE input. A LOW on MODE will select a linear burst sequence. A HIGH on MODE will select an interleaved burst order. Leaving MODE unconnected will cause the device to default to a interleaved burst sequence.Sleep Mode
The ZZ input pin is an asynchronous input. Asserting ZZ places the SRAM in a power conservation sleep mode. Two clock cycles are required to enter into or exit from this sleep mode. While in this mode, data integrity is guaranteed. Accesses pending when entering the sleep mode are not considered valid nor is the completion of the operation guaranteed. The device must be deselected prior to entering the sleep mode. CE1, CE2, CE3 [2], ADSP, and ADSC must remain inactive for the duration of t ZZREC after the ZZ input returns LOW.
Interleaved Burst Address Table
(MODE = Floating or V DD)
First
Address
A1: A0
Second
Address
A1: A0
Third
Address
A1: A0
Fourth
Address
A1: A0 00011011
01001110
10110001
11100100 Linear Burst Address Table (MODE = GND) First
Address
A1: A0
Second
Address
A1: A0
Third
Address
A1: A0
Fourth
Address
A1: A0 00011011
01101100
10110001
11000110
ZZ Mode Electrical Characteristics
Parameter Description Test Conditions Min Max Unit I DDZZ Sleep mode standby current ZZ > V DD– 0.2V80mA t ZZS Device operation to ZZ ZZ > V DD – 0.2V2t CYC ns t ZZREC ZZ recovery time ZZ < 0.2V2t CYC ns t ZZI ZZ active to sleep current This parameter is sampled2t CYC ns t RZZI ZZ inactive to exit sleep current This parameter is sampled0ns
CY7C1381D, CY7C1381F
CY7C1383D, CY7C1383F Truth Table [4, 5, 6, 7, 8]
Cycle Description ADDRESS
Used CE1CE2CE3ZZ ADSP ADSC ADV WRITE OE CLK DQ
Deselected Cycle, Power
Down
None H X X L X L X X X L-H Tri-State
Deselected Cycle, Power
Down
None L L X L L X X X X L-H Tri-State
Deselected Cycle, Power
Down
None L X H L L X X X X L-H Tri-State
Deselected Cycle, Power
Down
None L L X L H L X X X L-H Tri-State
Deselected Cycle, Power
Down
None X X X L H L X X X L-H Tri-State Sleep Mode, Power Down None X X X H X X X X X X Tri-State Read Cycle, Begin Burst External L H L L L X X X L L-H Q
Read Cycle, Begin Burst External L H L L L X X X H L-H Tri-State Write Cycle, Begin Burst External L H L L H L X L X L-H D
Read Cycle, Begin Burst External L H L L H L X H L L-H Q
Read Cycle, Begin Burst External L H L L H L X H H L-H Tri-State Read Cycle, Continue Burst Next X X X L H H L H L L-H Q
Read Cycle, Continue Burst Next X X X L H H L H H L-H Tri-State Read Cycle, Continue Burst Next H X X L X H L H L L-H Q
Read Cycle, Continue Burst Next H X X L X H L H H L-H Tri-State Write Cycle, Continue Burst Next X X X L H H L L X L-H D
Write Cycle, Continue Burst Next H X X L X H L L X L-H D
Read Cycle, Suspend Burst Current X X X L H H H H L L-H Q
Read Cycle, Suspend Burst Current X X X L H H H H H L-H Tri-State Read Cycle, Suspend Burst Current H X X L X H H H L L-H Q
Read Cycle, Suspend Burst Current H X X L X H H H H L-H Tri-State Write Cycle, Suspend Burst Current X X X L H H H L X L-H D
Write Cycle, Suspend Burst Current H X X L X H H L X L-H D
Notes:
4.X=Don't Care, H = Logic HIGH, L = Logic LOW.
5.WRITE = L when any one or more byte write enable signals, and BWE = L or GW = L. WRITE = H when all byte write enable signals, BWE, GW = H.
6.The DQ pins are controlled by the current cycle and the signal. is asynchronous and is not sampled with the clock.
7.The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BW X. Writes may occur only on subsequent clocks after
the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to tri-state. OE is a don't care for the remainder of the write cycle.
8. is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are tri-state when is
inactive or when the device is deselected, and all data bits behave as output when is active (LOW).
CY7C1381D, CY7C1381F
CY7C1383D, CY7C1383F
Truth Table for Read/Write [4, 9]
Function (CY7C1381D/CY7C1381F)GW BWE BW D BW C BW B BW A Read H H X X X X Read H L H H H H Write Byte A (DQ A, DQP A)H L H H H L Write Byte B(DQ B, DQP B)H L H H L H Write Bytes A, B (DQ A, DQ B, DQP A, DQP B)H L H H L L Write Byte C (DQ C, DQP C)H L H L H H Write Bytes C, A (DQ C, DQ A, DQP C, DQP A)H L H L H L Write Bytes C, B (DQ C, DQ B, DQP C, DQP B)H L H L L H
H L H L L L Write Bytes C, B, A (DQ C, DQ B, DQ A, DQP C,
DQP B, DQP A)
Write Byte D (DQ D, DQP D)H L L H H H Write Bytes D, A (DQ D, DQ A, DQP D, DQP A)H L L H H L Write Bytes D, B (DQ D, DQ A, DQP D, DQP A)H L L H L H
H L L H L L Write Bytes D, B, A (DQ D, DQ B, DQ A, DQP D,
DQP B, DQP A)
Write Bytes D, B (DQ D, DQ B, DQP D, DQP B)H L L L H H
H L L L H L Write Bytes D, B, A (DQ D, DQ C, DQ A, DQP D,
DQP C, DQP A)
Truth Table for Read/Write [4, 9]
Function (CY7C1383D/CY7C1383F)GW BWE BW B BW A
H L L L
Write Bytes D, C, A (DQ D, DQ B, DQ A, DQP D,
DQP B, DQP A)
Write All Bytes H L L L
Write All Bytes L X X X
Read H H X X
Read H L H H
Write Byte A – (DQ A and DQP A)H L H L
Write Byte B – (DQ B and DQP B)H L L H
Write All Bytes H L L L
Write All Bytes L X X X
Note:
9.Table only lists a partial listing of the byte write combinations. Any combination of BW X is valid. Appropriate write will be done based on which byte write is active.
CY7C1381D, CY7C1381F CY7C1383D, CY7C1383F
IEEE 1149.1 Serial Boundary Scan (JTAG)
The CY7C1381D/CY7C1383D/CY7C1381F/CY7C1383F incorporates a serial boundary scan test access port (TAP).This part is fully compliant with 1149.1. The TAP operates using JEDEC-standard 3.3V or 2.5V IO logic levels. The CY7C1381D/CY7C1383D/CY7C1381F/CY7C1383F contains a TAP controller, instruction register, boundary scan register, bypass register, and ID register.
Disabling the JTAG Feature
It is possible to operate the SRAM without using the JTAG feature. To disable the TAP controller, TCK must be tied LOW (V SS) to prevent clocking of the device. TDI and TMS are internally pulled up and may be unconnected. They may alternately be connected to V DD through a pull up resistor. TDO may be left unconnected. Upon power up, the device will come up in a reset state, which will not interfere with the operation of the device.
TAP Controller State Diagram
The 0 or 1 next to each state represents the value of TMS at the rising edge of TCK.
Test Access Port (TAP)
Test Clock (TCK)
The test clock is used only with the TAP controller. All inputs are captured on the rising edge of TCK. All outputs are driven from the falling edge of TCK.
Test MODE SELECT (TMS)
The TMS input is used to give commands to the TAP controller and is sampled on the rising edge of TCK. This pin may be left unconnected if the TAP is not used. The ball is pulled up inter-nally, resulting in a logic HIGH level.
Test Data-In (TDI)
The TDI ball is used to serially input information into the registers. The register between TDI and TDO is chosen by the instruction that is loaded into the TAP instruction register. TDI is internally pulled up and can be unconnected if the TAP is unused in an application. TDI is connected to the most significant bit (MSB) of any register. (See TAP Controller Block Diagram.)
Test Data-Out (TDO)
The TDO output ball is used to serially clock data-out from the registers. The output is active depending upon the current state of the TAP state machine. The output changes on the falling edge of TCK. TDO is connected to the least significant bit (LSB) of any register. (See TAP Controller State Diagram.)
Performing a TAP Reset
A Reset is performed by forcing TMS HIGH (V DD) for five rising edges of TCK. This Reset does not affect the operation of the SRAM and may be performed while the SRAM is operating. At power up, the TAP is reset internally to ensure that TDO comes up in a High-Z state.
TAP Registers
Registers are connected between the TDI and TDO balls and allow data to be scanned in and out of the SRAM test circuitry. Only one register can be selected at a time through the instruction registers. Data is serially loaded into the TDI ball on the rising edge of TCK. Data is output on the TDO ball on the falling edge of TCK.
Instruction Register
Three-bit instructions can be serially loaded into the instruction register. This register is loaded when it is placed between the TDI and TDO balls as shown in the TAP Controller Block Diagram. Upon power up, the instruction register is loaded with the IDCODE instruction. It is also loaded with the IDCODE instruction if the controller is placed in a reset state as described in the previous section.
When the TAP controller is in the Capture-IR state, the two least significant bits are loaded with a binary ‘01’ pattern to allow for fault isolation of the board level serial test path.。