Liftoff process for exfoliation of thin film photo
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专利名称：Liftoff process for exfoliation of thin film photovoltaic devices and back contact f or mat ion
发明人：Richard A. Haight,James B. Hannon,Satoshi Oida
申请号：US14 880808 申请日：20151012 公开号：US09935214 B 2 公开日：201804 03 专利附图：
摘要：A method for forming a back contact on an absorber layer in a photovoltaic
பைடு நூலகம்
device includes forming a two dimensional material on a first substrate. An absorber layer including Cu—Zn—Sn—S(Se) (CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.
申请人：INTERNATIONAL BUSINESS MACHINES CORPORATION 地址：Armonk NY US 国籍：US 代理机构：Tutunjian & Bitetto, P.C. 代理人：Vazken Alexanian 更多信息请下载全文后查看
专利名称：Liftoff process for exfoliation of thin film photovoltaic devices and back contact f or mat ion
发明人：Richard A. Haight,James B. Hannon,Satoshi Oida
申请号：US14 880808 申请日：20151012 公开号：US09935214 B 2 公开日：201804 03 专利附图：
摘要：A method for forming a back contact on an absorber layer in a photovoltaic
பைடு நூலகம்
device includes forming a two dimensional material on a first substrate. An absorber layer including Cu—Zn—Sn—S(Se) (CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.
申请人：INTERNATIONAL BUSINESS MACHINES CORPORATION 地址：Armonk NY US 国籍：US 代理机构：Tutunjian & Bitetto, P.C. 代理人：Vazken Alexanian 更多信息请下载全文后查看