TSB772S_07中文资料

合集下载

KSB772YS;KSB772YSTU;KSB772YSTSSTU;KSB772YSTSTU;KSB772OS;中文规格书,Datasheet资料

KSB772KSB772TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.FACT™FACT Quiet series™FAST ®FASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™I 2C™ImpliedDisconnect™ISOPLANAR™LittleFET™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC ®OPTOPLANAR™PACMAN™POP™Power247™PowerTrench ®QFET™QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™SILENT SWITCHER ®SMART START™SPM™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™TruTranslation™UHC™UltraFET ®VCX™ACEx™ActiveArray™Bottomless™CoolFET™CROSSVOLT ™DOME™EcoSPARK™E 2CMOS™EnSigna™Across the board. Around the world.™The Power Franchise™Programmable Active Droop™分销商库存信息:FAIRCHILDKSB772YS KSB772YSTU KSB772YSTSSTU KSB772YSTSTU KSB772OS。

Z23S2407N中文资料(AEROVOX)中文数据手册「EasyDatasheet - 矽搜」

芯片中文手册,看全文,戳
Aerovox公司 ®
SuperMet & ZeMax TM 技术指标
特征
Aerovox路线SuperMet和ZEMAX
TM 电容器
•可根据金属外壳（铝合金外壳
利用最先进金属化聚丙烯薄膜技术状态.这款最新设
请求 - 请联系工厂）SuperMet
计材料结合领先设计技术,具有40多年电容经验.
咨询厂家
电气特性
应用
• 窗式空调 • 单元式空调 • 电动汽车 • 风扇与鼓风机 • Pumps • 洗衣房设备 • 除湿机 • 压缩机 •炉
• 温度范围：-40〜+ 70℃. • 电容范围3至80μF. • 电容公差±10％. • 电压范围240至440 VAC,60赫兹. • 损耗因数0.1％以下@ 60赫兹和25℃. • 绝缘电阻1000MΩ每μF.
芯片中文手册,看全文,戳
Aerovox公司 ®
交流电动机运行电容器
ZeMax TM - 铝合金外壳
AEROMET II - 塑料盒
美国制造
SuperMet - 金属外壳
芯片中文手册,看全文,戳
Aerovox公司 ®
目录
AEROMET II规格（系列M型）.......................................... .................................... 3 SuperMet & ZeMax TM 规格（系列Z型）............................................ .................. 4 部分编号系统.............................................................................................................五 AEROMET II评分表（单台容量）系列M型....................................... ........... 6 AEROMET II评分表（双功能）系列型号M ....................................... ............. 8 SuperMet评分表（单台容量）系列Z型........................................ ............... 9 SuperMet评分表（双容量）系列Z型........................................ .............. 11 ZeMax TM 评分表（单台容量）系列Z型......................................... ........... 13 AEROMET II机械尺寸.............................................. .......................................... 15 SuperMet机械尺寸............................................... ........................................... 16 ZeMax TM 机械Dimensions............................................................................................17 附件 - 安装硬件.............................................. ............................................ 18

杭州士兰微电子股份有限公司 SC7A20 三轴微机械数字加速度传感器说明书

±2G/±4G/±8G/±16G三轴微机械数字加速度计描述SC7A20是一款高精度12bit数字三轴加速度传感器芯片，内置功能更丰富，功耗更低，体积更小，测量更精确。

芯片通过I²C/SPI接口与MCU通信，加速度测量数据以中断方式或查询方式获取。

INT1和INT2中断管脚提供多种内部自动检测的中断信号，适应多种运动检测场合，中断源包括6D/4D方向检测中断信号、自由落体检测中断信号、睡眠和唤醒检测中断信号、单击和双击检测中断信号。

芯片内置高精度校准模块，对传感器的失调误差和增益误差进行精确补偿。

±2G、±4G、±8G和±16G四种可调整的全量程测量范围，灵活测量外部加速度，输出数据率1HZ和400HZ间可选。

芯片内置自测试功能允许客户系统测试时检测系统功能，省去复杂的转台测试。

芯片内置产品倾斜校准功能，对贴片和板卡安装导致的倾斜进行补偿，不占系统资源，系统文件升级不影响传感器参数。

主要特点宽电压范围1.71V-3.6V1.8V兼容数字IO口低功耗模式下电源电流低至2µA±2G/±4G/±8G/±16G动态全量程范围 12bit有效数据(HR)I²C/SPI数字输出接口6D/4D方向检测自由落体检测单击双击检测及运动检测可编程中断生成电路内嵌自测试功能内嵌FIFO10000g高G抗击能力应用手机平板室内导航图像旋转运动激活用户接口游戏产品规格分类产品名称封装形式打印名称材料包装形式 SC7A20TR LGA-12-2x2x1.0 SC7A20 无铅编带内部框图XY ZC-to-V Converter Gain数符号测试条件最小值V CC电路不损坏-0.3 3.6V P电路不损坏V in电路不损坏T OPR电路不损坏T STG电路不损坏(VDD=2.5V, T测试条件123FS=0 (HR mode)FS=1 (HR mode)FS=2 (HR mode)FS=3 (HR mode)参数符号测试条件最小值典型值最大值单位零漂 Ty Off0 FS =0 --±40--mg温漂TC Off 与25°C 的最大偏差 -- ±0.5 -- mg/°C 自测输出V st1FS=0， X 轴 -- 276 -- LSb V st2 FS=0， Y 轴 -- 276 -- LSb V st3FS=0， Z 轴-- 984 -- LSb 系统带宽 BW -- ODR/2 -- HZ 工作温度T OPR-40--+85°C注意：电路2.5V 出厂校准。

proteusisis7库元件中英对照表

AD芯片-----TECHWELL TW6805A仿真软件里的AD0809有问题,用0808代替定时/计数器的使用方法：CLK：计数和测频状态时，数字波的输入端。

（counter enable)CE：计数使能端；通过属性设置高还是低有效。

无效暂停计数RST:复位端（RESET),可设上升沿（Low-High)或者下降沿（High-Low）有效。

4种工作方式：通过属性Operating Mode 来选择。

Default : 缺省方式，计数器方式。

Time(secs):100S定时方式，由CE和RST控制暂停和重新开始。

Time(hms)：10小时定时方式，同上。

Frequency: 测频方式，CE和RST有效时，显示CLK端数字波频率Count:计数方式。

+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++常用元件列表：POT-HG 可调电位器7SEG-MPX8-CC-BLUE 8位数码管COMPIM 串口SW- 开关7SEG-BCD 含译码驱动的数显Speaker 扬声器2N5771和2N5772，15V对管300MARES , CAP,BUTTON 按钮开关KEYPAD-PHONE 3*4电话键盘KEYPAD-SMALLCALC 4*4计算器键盘KEYPAD-CALCULATOR 4*6计算器键盘PG160128A 128*128液晶++++++++元件库详细分类ics 模拟集成器件8个子类：amplifier 放大器comparators 比较器display drivers 显示驱动器filters 滤波器miscellaneous 混杂器件regulators 三端稳压器timers 555定时器voltage references 参考电压2，capacitors CAP电容，23个分类别animated 可显示充放电电荷电容audio grade axial 音响专用电容axial lead polypropene 径向轴引线聚丙烯电容axial lead polystyrene 径向轴引线聚苯乙烯电容ceramic disc 陶瓷圆片电容decoupling disc 解耦圆片电容high temp radial 高温径向电容high temp axial electrolytic高温径向电解电容metallised polyester film 金属聚酯膜电容metallised polypropene 金属聚丙烯电容metallised polypropene film 金属聚丙烯膜电容miniture electrolytic 微型电解电容multilayer metallised polyester film 多层金属聚酯膜电容mylar film 聚酯薄膜电容nickel barrier 镍栅电容non polarised 无极性电容polyester layer 聚酯层电容radial electrolytic 径向电解电容resin dipped 树脂蚀刻电容tantalum bead 钽珠电容variable 可变电容vx a xial electrolytic VX 轴电解电容3，CMOS 4000 series 4000系列数字电路adders 加法器buffers & drivers 缓冲和驱动器comparators 比较器counters 计数器decoders 译码器encoders 编码器flip-flops & latches 触发器和锁存器frequency dividers & tiner 分频和定时器gates & inverters 门电路和反相器memory 存储器混杂逻辑电路mutiplexers 数据选择器multivibrators 多谐振荡器phase-locked loops(PLL) 锁相环registers 寄存器signal switcher 信号开关4，connectors 接头；8个分类：audio 音频接头D-type D型接头DIL 双排插座header blocks 插头miscellaneous 各种接头PCB transfer PCB 传输接头SIL 单盘插座ribbon cable 蛇皮电缆terminal blocks 接线端子台5，data converters 数据转换器：4个分类：A/D converters 模数转换器D/A converters 数模转换器sample & hold 采样保持器temperature sensors 温度传感器6，debugging tools 调试工具数据：3个类别：breakpoint triggers 断点触发器logic probes 逻辑输出探针logic timuli 逻辑状态输入7，diodes 二极管；8个分类：bridge rectifiers 整流桥generic 普通二极管rectifiers 整流二极管schottky 肖特基二极管switching 开关二极管tunnel 隧道二极管varicap 稳压二极管8，inductors 电感：3个类别：generic 普通电感SMT inductors 表面安装技术电感transformers 变压器9,laplace primitives 拉普拉斯模型：7个类别：1st order 一阶模型2nd order 二阶模型controllers 控制器non-linear 非线性模型operators 算子poles/zeros 极点/零点symbols 符号10，memory ICs 存储器芯片：7个分类：dynamic RAM 动态数据存储器EEPROM 电可擦出程序存储器EPROM 可擦出程序存储器I2C memories I2C总线存储器memory cards 存储卡SPI Memories SPI总线存储器static RAM 静态数据存储器11，microprocessor ICs 微处理器：13个分类：12，modelling primitivvves 建模源：9个分类：13，operational amplifiers 运算放大器：7个分类：dual 双运放ideal 理想运放macromodel 大量使用的运放octal 8运放quad 4运放single 单运放triple 三运放14，optoelectronics 光电器件：11个分类：7-segment displays 7段显示alphanumeric LCDs 液晶数码显示bargraph displays 条形显示dot matrix displays 点阵显示graphical LCDs 液晶图形显示lamps 灯LCD controllers 液晶控制器LCD controllers 液晶面板显示LEDs 发光二极管optocouplers 光电耦合serial LCDs 串行液晶显示15，resistors 电阻：11个分类：metal film 金属膜电阻10 watt wirewound 10w绕线电阻2w metal film 2w 金属膜电阻3 watt wirewound 3w 绕线电阻7 watt wirewound 7w 绕线电阻generix 普通电阻high voltage 高压电阻NTC 负温度系数热敏电阻resistor packs 排阻variable 滑动变阻器varisitors可变电阻参考试验中采用的可变电阻是：POT-HG16，simulator primitives 仿真源：3个类别：flip-flops 触发器gates 门电路sources 电源17，switches and relays 开关和继电器：4个类别：key pads 键盘relays 普通继电器relays(specific) 专用继电器switches 开关18,switching devices 开关器件：4个分类：DIACs 两端交流开关generic 普通开关元件SCRs 可控硅TRIACs 三端双向可控硅19，真空管：20，传感器：2个分类：pressure 压力传感器temperature 温度传感器21，晶体管：8个分类：bipolar 双极型晶体管generic 普通晶体管(错误）IGBT 绝缘栅双极晶体管JFET 结型场效应管MOSFET 金属氧化物场效应管RF power LDMOS 射频功率LDMOS管RF power VDMOS 射频功率VDMOS管unijunction 单结晶体管Electromechanical 电机MOTOR AC 交流电机MOTOR SERVO 伺服电机双相步进电机motor-bistepper（Bipolar Stepper Motor），四相步进电机motor-stepper（unipolar stepper motor）驱动电路，用ULN2003可以，proteus中推荐的L298和L6201(电子元件-步进电机中有L298资料）+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++步进电机,可以用MTD2003,UN2916等专用芯片Proteus中图形液晶模块驱动芯片一览表LM3228 LM3229 LM3267 LM3283LM3287 LM4228 LM4265 LM4267LM4283 LM4287 PG12864F PG24064FPG128128A PG160128AAGM1232G EW12A03GLY HDM32GS12-B HDM32GS12Y-BHDG12864F-1 HDS12864F-3 HDG12864L-4 HDG12864L-6NOKIA7110 TG126410GFSB TG13650FEYAMPIRE128x64 LGM12641BS1RPROTEUS原理图元器件库详细说明单双向可控硅、包括电阻、电容、二极管、三极管和PCB的连接器符号、包括虚拟仪器和有源器件、拨动开关、键盘、可调电位器和开关、包括二极管和整流桥、稳压管、变容二极管、大功率二极管、高速二极管、可控硅、包括LCD、LED、LED阵列包括三极管包括场效应管包括模拟元器件AS 稳压二极管、全桥、74系列、及其他。

朗斯测试技术有限公司 Lance LC07系列内装IC应变加速度传感器用户手册说明书

Lance LC07系列LanceLC07系列内装IC应变加速度传感器用户手册朗斯测试技术有限公司LANCE MEASUREMENT TECHNOLOGIES CO.,LTD.目录一、概述 (2)二、技术指标·······································2三、使用方法及注意事项 (4)四、附件及随机文件 (13)全国销售电话：4008-824-824 更多资料详情：一、概述加速度的测量：在大于0.3Hz时，利用压电加速度传感器—电荷放大器测量系统或内装IC压电加速度传感器都可以进行理想的测量。

在小于0.3Hz时，通常使用应变加速度传感器—应变仪测量系统，但由于零漂和噪声都较大，特别在测量小加速度时，很难得到理想的测量结果。

LC07系列内装IC应变加速度传感器的出现，很好的解决了这一难题。

该系列传感器不同于传统的应变桥结构，它是在硅片上同时集成了42个对加速度敏感的可变电容单元，同时解决了零漂、噪声、精度三大难题。

二、技术指标主要技术指标型号量程g-3dB频响Hz灵敏度mV/g抗冲击g噪声密度mg/Hz轴向电源V/mALC0701-2±2DC-2500100020000.11单+5/1 LC0701-5±5DC-250030020000.15单+5/1 LC0702±18DC-250010020000.19单+5/3 LC0703±50DC-1000385001单+5/3 LC0704±100DC-4001910004单+5/3 LC0705±18DC-250010020000.19双+5/1 LC0706±50DC-1000385001双+5/5±10DC-6001905001三+5/7 LC0709±18DC-250010020000.19三+5/1注：1.内装IC应变加速度传感器有如下共同技术指标：·线性：0.5%·横向灵敏度：≤5%·输出短路：无限期·电缆长度：3米2.型号后缀A，电源为8-20V。

HB771S培训

HB771S培训HB771S系列产品培训——客服中心培训内容产品简介HB771S系列产品是汉邦高科自主研发的新一代高性能经济性网络高清摄像机，该系列产品采用H.264视频压缩技术，支持双码流，主码流最大分辨率可以达到1024P（1280×1024），采用优质的CMOS图像传感器，彩色最低照度可以达到0.05Lux，并配备最新一代阵列式红外灯，光效高、发热小，实现真正的日夜监控。

产品简介& 命名规则HB-771S-AR5-P汉邦标识枪机汉邦红外壳100~150万像素超低照度POE供电50米红外阵列灯HB771S AR5P X ?汉邦标识7-网络枪机8-网络半球7-汉邦红外壳像素：1-100~150万S-超低照度AR-阵列灯3-30米红外5-50米红外P-POE供电焦距产品简介& 产品型号HB771S-AR3 HB771S-AR5HB771S-AR3-P HB771S-AR5-P产品简介&独特的外观设计配色：主体亮白色：防止夏天太阳直射导致机体温度过高。

配色暗灰色：防止光线反射。

采用汉邦私有红外摄像机壳，美观大气，铝合金材质让摄像机在提升散热性能的同时，具备了一定的防破坏能力。

工作温度-20℃~60℃，工作湿度小于90%（无凝结），配备防护罩，并且具有IP66的防水防尘等级，无论是晴天、雨天还是雪天都可以正常工作。

各部件连接紧密，连接处采用六角螺丝，防止拆卸。

顶部双螺丝设定，使防护罩在机身上更加稳固，不易晃动。

精心设计，打造优质产品。

产品简介& 多种供电方式可选DC12V ±10%POE供电产品简介& 图像质量高采用SONY 1/3英寸逐行扫描CMOS 图像传感器，图像分辨率最高可达1024P（1280×1024），有效像素高达140万，出来的图像效果更加动人。

图象清晰，细节更丰富。

通透性好，噪点少。

色彩还原准确。

产品简介& 夜视效果好采用最新一代阵列式红外灯，发光效率高，照射距离远，产生的热量小，使用寿命长。

TS9007_07资料

TS9007 300mA Low Noise CMOS LDOSOT-25DFN 2x2SOT-23General DescriptionThe TS9007 series is 300mA ultra-low-noise LDO especially designed for battery-power RF and wireless applications. The TS9007 regulator achieves a low 450mV dropout at 300mA load current of 3.3V output, ultra-low output voltage noise of 15uVrms and PSRR of 57dB at 1KHz.The TS9007 regulators are also optimized to work with low-ESR and low cost ceramic capacitors reducing the amount of board space critical in hand-held devices. The TS9007 requires only 0.47uF output capacitor for stability with and load. The TS9007 consumes less than 1uA in shutdown mode.Features● 450mV Dropout at 300mA load (3.3V) ● Low quiescent current: 90µA ● Output voltage ±2%● Internal current limit and thermal shutdown ● Power saving shutdown mode (<1uA) ● Only need input and output capacitors ● Build-In internal Soft-Start●Output short-circuit current limit protectionApplications● Palmtops, PDA and Notebook Computers ● DSC, Handset Camera Modules ● PCMCIA Cards, PC Cameras● USB Based Portable Devices (MPS, PMP) ●GSM/GPRS/3G RF Transceiver ModulesOrdering InformationNote: Wherex denotes voltage option, available are1= 1.2V A = 1.5V D = 1.8V K = 2.5V M = 2.7V N = 2.8V O = 2.9V P = 3.0V S = 3.3VContact factory for additional voltage options.Part No.PackagePackingTS9007x CX RF SOT-23 3Kpcs / 7” Reel TS9007x CX5 RF SOT-25 3Kpcs / 7” Reel TS9007x CQ RF DFN 2x2 3Kpcs / 7” Reel Block DiagramTypical Application CircuitEN (Pin 3) may be connected directly to V IN (Pin1) Low noise operation: C BYP =30nF, C OUT >0.47uF Basic operation: C BYP =not used, C OUT >1uFC OUT 0.47uF C BYP 30nFonoffEN V OUTV INPin Definition:1. Input2. Ground3. Enable4. Bypass5. OutputPin Definition: 1. Input 2. N/C 3. Output 4. N/C 5. Ground 6. EnablePin Definition:1. Ground2. Output3. InputTS9007 300mA Low Noise CMOS LDOAbsolute Maximum RatingParameterSymbolLimitUnitSupply VoltageV IN -0.3 ~ +7V Input Supply Voltage (Recommended) V OPR +2 ~ +6 V Output Short-Circuit DurationInfinitePower Dissipation SOT-25 300SOT-23 300DFN 2x2 P D 500 mWSOT-25 250SOT-23 300Thermal Resistance DFN 2x2 ӨJA 165°C/W Junction Temperature Range T J +150 °C Storage Temperature Range T STG -65 ~ +150 °CNotes: Stress above the listed absolute rating may cause permanent damage to the device.Electrical Characteristics (T A = 25o C, V IN = (V OUT +1V), C IN =C OUT =0.47uF, V EN =V IN , unless otherwise noted.)ParameterConditionsMinTypMaxUnitOutput Voltage V IN =V O + 1V, I O =10mA -2.0 -- +2 % Output Current Limit Short-circuit output-- 200 -- mA Maximum Output Current V IN =Vo+1V,300 -- -- mA Line Regulation V IN =(V OUT +1V) to 6V, I O =10mA -- 0.3 -- %/V V IN =Vo+1V, 1mA ≤IL ≤300mA V OUT ≥2.5V -- 0.2 1.0 Load RegulationV IN =Vo+1V, 1mA ≤IL ≤200mA V OUT <2.5V -- 0.2 1.0 %Io=300mA, V OUT =Vo - 2% V OUT ≥2.5V -- 500 600 Dropout Voltage Io=200mA, V OUT =Vo - 2% V OUT <2.5V-- 800 1000 mV Shutdown Supply Current EN=0V-- 0.01 -- uA Ground Pin Current Io=0mA-- 90 150 uA f=100Hz, Io=1mA-- 60 -- f=1KHz, Io=1mA -- 57 -- Ripple Rejection (PSRR)f=10Hz, Io=1mA-- 45 -- dBIo=10mA, f=10Hz to 100kHz, Bypass = 0nF-- 45 --Output NoiseIo=10mA, f=10Hz to 100kHz, Bypass = 30nF -- 15 -- uVrmsShutdown Exit Delay (note 2) R LOAD = 50Ω-- 45 300 uSEN Logic Low Level V IN =2.0V to 5.5V -- -- 0.4 EN Logic High LevelV IN =2.0V to 5.5V 1.5--VINV EN Input Bias Current V IN =2.0V to 5.5V-- -- -- uAThermal Shutdown Shutdown Temperature -- 160 -- o C Thermal Shutdown Hysteresis -- 20 -- oCNotes:a. The drop out voltage varies depending on output voltage selection.Dropout is defined as V IN - V OUT when V OUT is 100mV below V OUT where V IN = Vout+1V for nominal V OUTb. Time needed for V OUT to reach 90% of final valueTS9007300mA Low Noise CMOS LDOApplication InformationEnable / ShutdownThe TS9007 comes with and active-high enable pin that allows the regulator to be enabled. Forcing the enable pin low disables the regulator and puts it into the shutdown mode. This pin cannot be left floating as it may cause an undetermined state.Input / Output CapacitorIt is recommended to use a 0.47uF capacitor on the TS9007 input and a 0.47uF capacitor on the output. For high regulation performance, larger input capacitor values and lower ESRs provide better noise rejection and line-transient response. The output noise, load-transient response, stability, and power-supply rejection can be improved by using large output capacitors. Low ESR ceramic capacitors provide optimal performance and save space.Power Supply Rejection and Transient ResponseThe PSRR and transient response can be improved by increasing the values of the input and output bypass capacitors, and through passive filtering techniquesFunction DescriptionDescriptionThe TS9007 is an ultra-low-noise, low-quiescent current, low-dropout linear regulator. It is supplied in a SOT-25 package for difference applications. This device can supply loads up to 300mA. As shown in the functional block diagram, the TS9007 consists of a reference and noise bypass circuit, error amplifier, output drive transistor, internal feedback voltage divider, thermal sensor, and short circuit current limiter. The internal reference is connected to the error amplifier’s inverting input. The error amplifier compares this reference with the feedback voltage and amplifies the difference. If the feedback voltage is lower than the reference voltage, the pass=transistor gate is pulled low. This allows more current to pass to the output and increases the output voltage.StabilityThe TS9007 is a high performance LDO emphasizing stability with low output capacitance. It is able to maintain stability with an output capacitor can also be increased to optimize performance. The TS9007 will remain stable and in regulation with no load, unlike many other voltage regulators.Internal P-Channel Pass TransistorThe TS9007 features a low impedance P-channel MOSFET pass transistor. This provides several advantages over similar designs using a PNP pass transistor, including low operating power and longer battery life. The TS9007 consumes only 90µA of quiescent current under most conditions.Output Short-Circuit Current LimitThe TS9007 includes a current limiter, which monitors and controls the pass transistor’s gage voltage, limiting the output current to about 200mA, for example, in a short-circuit output situation.ShutdownThe TS9007 also features a low-power active shutdown mode. It has a switch that turns off the device when disabled. This allows the output capacitor and load to discharge and de-energize the load. In the shutdown mode, the internal functional blocks, such as voltage reference and the error amplifier, are turned off completely, and the quiescent current is less than 1µA.TS9007300mA Low Noise CMOS LDOFunction Description (Continue)Thermal Protection ShutdownThe thermal protection shutdown function protects the device from operating in over temperature condition. When the junction temperature exceeds +160o C, the thermal sensor signals the shutdown logic, turning off the pass transistor and allowing the IC to tool down. The thermal sensor turns the pass transistor on again after the IC’s junction temperature drops to +140o C.Soft-Start CircuitryThe TS9007 includes a soft-start circuitry to limit inrush current at turn-on. During power up, the output capacitor and output load are charged with a reduce output current. Shortly after the initial power up, the soft-start feature is terminated and normal operation is resumed.TS9007 300mA Low Noise CMOS LDOSOT-23 Mechanical DrawingMarking DiagramA = Device CodeX = Fixed Output Voltage Code1=1.2V, A =1.5V, D =1.8V, K =2.5V, M =2.7V, N =2.8V, O =2.9V P =3.0V, S =3.3V Y = Year Code M = Month Code(A =Jan, B =Feb, C =Mar, D =Apl, E =May, F =Jun, G =Jul, H =Aug, I =Sep, J =Oct, K =Nov, L =Dec) L = Lot CodeSOT-23 DIMENSION MILLIMETERS INCHES DIM MIN MAX MIN MAX. A 0.95 BSC 0.037 BSC A1 1.9 BSC 0.074 BSC B 2.60 3.00 0.102 0.118 C 1.40 1.70 0.055 0.067 D 2.80 3.10 0.110 0.122 E 1.00 1.30 0.039 0.051 F 0.00 0.10 0.000 0.004 G 0.35 0.50 0.014 0.020 H 0.10 0.20 0.004 0.008 I 0.30 0.60 0.012 0.024 J5º 10º 5º 10ºTS9007 300mA Low Noise CMOS LDOSOT-25 Mechanical DrawingMarking DiagramA = Device CodeX = Fixed Output Voltage Code1=1.2V, A =1.5V, D =1.8V, K =2.5V, M =2.7V, N =2.8V, O =2.9V P =3.0V, S =3.3V Y = Year Code M = Month Code(A =Jan, B =Feb, C =Mar, D =Apl, E =May, F =Jun, G =Jul, H =Aug, I =Sep, J =Oct, K =Nov, L =Dec) L = Lot CodeSOT-25 DIMENSIONMILLIMETERS INCHES DIM MIN MAX MIN MAX. A+A1 0.09 1.25 0.0354 0.0492 B 0.30 0.50 0.0118 0.0197 C 0.09 0.25 0.0035 0.0098 D 2.70 3.10 0.1063 0.1220 E 1.40 1.80 0.0551 0.0709 E 1.90 BSC 0.0748 BSC H 2.40 3.00 0.09449 0.1181 L 0.35 BSC 0.0138 BSC Ө1 0º 10º 0º 10º S10.95 BSC 0.0374 BSCTS9007 300mA Low Noise CMOS LDODFN 2x2 Mechanical DrawingMarking DiagramA = Device CodeX = Fixed Output Voltage Code1=1.2V, A =1.5V, D =1.8V, K =2.5V, M =2.7V, N =2.8V, O =2.9V P =3.0V, S =3.3V Y = Year Code M = Month Code(A =Jan, B =Feb, C =Mar, D =Apl, E =May, F =Jun, G =Jul, H =Aug, I =Sep, J =Oct, K =Nov, L =Dec) L = Lot CodeDFN 2x2 DIMENSION MILLIMETERS INCHES DIM MIN MAX MIN MAX A 0.25 0.35 0.0098 0.0138 a1 0.10 (typ) 0.0039 (typ) B 0.90 1.10 0.0354 0.0433 C 0.50 (typ) 0.0197 (typ) D 0.50 (typ) 0.0197 (typ) E 0.15 0.25 0.0059 0.0098 F 1.30 1.50 0.0512 0.0591 G 0.67 0.73 0.0264 0.0287 H 0.20 0.30 0.0079 0.0118 I 0.60 (MAX.) 0.0236 (MAX.) J 0.07 (MAX.) 0.0028 (MAX.) K 1.75 1.85 0.0689 0.0728 L1.952.05 0.0768 0.0807TS9007300mA Low Noise CMOS LDONoticeSpecifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.。

Skyworks Solutions 双DVB-C2 S2 S2X T C S数字电视解调器说明书

DescriptionThe Si21602C integrates two separate high-performance digital demodulators for the DVB-C2/C, DVB-T, DVB-S2/S and DVB-S2X standards into a single compact package. Leveraging Skyworks'proven digital demodulation architecture, the Si21602C achieves excellent reception performance for each media while significantly minimizing front-end design complexity, cost, and power dissipation. Connecting the Si21602C to both a dual terrestrial/cable TV tuner, and a dual satellite tuner, results in a high-performance and cost optimized TV front-end solution.Skyworks' internally developed DVB-C2 demodulator can accept a standard IF (36 MHz) or low-IF input (differential) and support all modes specified by the DVB-C2 standard. The main features of the DVB-C2 mode are 4096-QAM, 6 or 8MHz bandwidth,management of notch insertion (broadband and narrowband), and support of multiple data slices and PLPs.The DVB-T and DVB-C, including ITU-T J.83 annex B,demodulators are enhanced versions of proven and broadly used Si2164/67/68/69 Skyworks devices.The satellite reception allows demodulating widespread DVB-S,DIRECTV™ (DSS), DVB-S2, DIRECTV™ (AMC) legacy standards, and new Part II of DVB-S2 (S2X) satellite broadcast standard. A zero-IF interface (differential) allows for a seamless connection to market proven satellite silicon tuners. It also integrates two DiSEqC™ 2.0 LNB interfaces for satellite dish control and, for each satellite demodulator, an equalizer to compensate for echoes in long cable feeds from the LNB to the satellite tuner RF input.The Si21602C offers an on-chip blind scanning algorithm for DVB-S/S2/S2X and DVB-C standards, as well as blind lock function.Features-Pin-to-pin compatible with all dual demodulator family: Si216x2 and Si218x2-API compatible with all single and all dual demodulators -DVB-C2 (ETSI EN 302 769)-16-QAM to 4096-QAM OFDM demodulation -DVB-T (ETSI EN 300 744)-NorDig Unified 2.5, D-Book 8 compliant-DVB-C (ETSI EN 300 429) / ITU-T J.83 Annex A/B/C-1 to 7.2 MSymbol/s, C-Book compliant -DVB-S2 (ETSI EN 302 307-1 V1.4.1)-QPSK/8PSK demodulator-DVB-S2X (ETSI EN302 307-2 V1.1.1)-QPSK/8PSK, 8/16/32APSK demodulator -Roll-off factors from 0.05 to 0.35-Channel bonding for TS transmission supported -Dual DiSEqC™ 2.x interface, Unicable support -DVB-S (ETSI EN 300 421) and DSS supported - 1 to 45 MSps for all satellite standards (<40 MSps in 32APSK)-I 2C serial bus interfaces (master and host)-Upgradeable with firmware patch download via fast SPI or I 2C (broadcast mode supported)-Dual independent differential IF input for T/C tuners and differ -ential ZIF I/Q inputs for satellite tuners-GPIOs and multi-purpose ports (two per demodulator)-Separate flexible TS interfaces with serial or parallel outputs and cross-bar feature -Fast lock times for all standards-Only two power supplies: 1.2 and 3.3V8x8mm, QFN-68 pin package, Pb-free/RoHS compliantSelected Electrical Specifications (T A =–10 to 70°C).ParameterTest Condition Min Typ Max Unit GeneralInput clock reference 4—30MHz Supported XTAL frequency 16—30MHz T otal power consumption for each demodulatorDVB-T 1—182—mW DVB-C22—327—mW DVB-C 3—142—mW DVB-S24—421—mW DVB-S 5—230—mW Thermal resistance ( JA ) 4 layer PCB—42—°C/W Power Supplies V DD _VCORE 1.14 1.20 1.30V V DD _VANA 3.00 3.30 3.60V V DD _VIO3.003.303.60VNotes:1. T est conditions: 8MHz, 8K FFT, 64-QAM, parallel TS.2. T est conditions: 4096-QAM, CR =5/6, GI =1/128, C/N = 34 dB (at picture failure).3. T est conditions: 6.9Mbaud, 256-QAM, parallel TS.4. T est conditions: 32Mbaud, CR =3/5, 8PSK, pilots On, parallel TS, C/N at picture failure.5.T est conditions: 30Mbaud, CR =7/8, parallel TS, at QEF: BER =2 x 10–4.Pin AssignmentsSelection GuidePart #DescriptionSi21602-C60-GM/R Dual Digital TV Demodulator for DVB-C2/S2/S2X/T/C/S, 8x8mm QFN-68_A D C _I P _AD D R _AD D R _BD D _A N AOT A L _I /C L K _I NE S E T BD D _C O R EP _C _AP _D _BP I O _1/T S _E R R _AD D _C O R ES 2_D A T A [7]S 1_D A T A [6]S 2_D A T A [6]S 1_D A T A [7]S 2_D A T A [5]M P _A _AD I SE C _C M D _G P I O _0/T S _E R R _M P _B _BD I SE Q C _O U T _D I S E Q C _I N _A _D I S E Q C _O U T _G N DV D D _C O R EV D D _C O R ES C L _H O S TV D D _V I OS D A _H O S T T S 1_S Y N CT S 2_V A LT S 1_V A LT S 2_S Y N C。

S07J中文资料

V OHHigh-level output voltage VSN54LS07SN54LS07, SN74LS07, SN74LS17HEX BUFFERS/DRIVERS WITHOPEN-COLLECTOR HIGH-VOLTAGE OUTPUTS元器件交易网I OH V OLV CC = MIN,V IL = 0.8 VV CC = MIN,V IH = 2 V VmA SN54LS07PARAMETERTEST CONDITIONS MIN TYP MAX UNIT AYR L = 110 Ω,C L = 15 pFnsSN54LS07, SN74LS07, SN74LS17HEX BUFFERS/DRIVERS WITHOPEN-COLLECTOR HIGH-VOLTAGE OUTPUTS元器件交易网元器件交易网IMPORTANT NOTICETexas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinueany product or service without notice, and advise customers to obtain the latest version of relevant informationto verify, before placing orders, that information being relied on is current and complete. All products are soldsubject to the terms and conditions of sale supplied at the time of order acknowledgement, including thosepertaining to warranty, patent infringement, and limitation of liability.TI warrants performance of its semiconductor products to the specifications applicable at the time of sale inaccordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extentTI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarilyperformed, except those mandated by government requirements.CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OFDEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICALAPPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, ORWARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHERCRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TOBE FULLY AT THE CUSTOMER’S RISK.In order to minimize risks associated with the customer’s applications, adequate design and operatingsafeguards must be provided by the customer to minimize inherent or procedural hazards.TI assumes no liability for applications assistance or customer product design. TI does not warrant or representthat any license, either express or implied, is granted under any patent right, copyright, mask work right, or otherintellectual property right of TI covering or relating to any combination, machine, or process in which suchsemiconductor products or services might be or are used. TI’s publication of information regarding any thirdparty’s products or services does not constitute TI’s approval, warranty or endorsement thereof.Copyright © 1998, Texas Instruments Incorporated。

B772中文资料

U TC 2SB 772P N P EPITAXIAL SILICON TRANSISTORUTC UNISONIC TECHNOLOGIES CO. LTD1QW-R204-002,AMEDIUM POWER LOW VOLTAGE TRANSISTORDESCRIPTIONThe UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator.FEATURES*High current output up to 3A *Low saturation voltage *Complement to 2SD8821:EMITTER 2:COLLECTOR 3:BASEABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )PARAMETER SYMBOL VALUE UNITCollector-Base VoltageV CBO -40 V Collector-Emitter Voltage V CEO -30 V Emitter-Base VoltageV EBO -5 V Collector Dissipation( Tc=25°C) Pc 10 W Collector Dissipation( Ta=25°C) Pc 1 W Collector Current(DC) Ic -3 A Collector Current(PULSE) Ic -7 A Base CurrentI B -0.6 AJunction Temperature T j 150 °C Storage TemperatureT STG -55 ~ +150°CELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified)PARAMETERSYMBOL TEST CONDITIONS MIN TYP MAX UNITCollector Cut-Off Current I CBO V CB =-30V,I E 0 -1000 nAEmitter Cut-Off Current I EBO V EB =-3V,Ic 0 -1000 nADC Current Gain(note 1)h FE1h FE2 V CE =-2V,Ic=-20mA V CE =-2V,Ic=-1A30100200 150 400 Collector-Emitter Saturation Voltage V CE (sat) Ic =-2A,I B =-0.2A -0.3 -0.5 V Base-Emitter Saturation Voltage V BE (sat) Ic =-2A,I B =-0.2A -1.0 -2.0 V Current Gain Bandwidth Product f T V CE =-5V,Ic =-0.1A 80 MHz Output Capacitance Cob V CB =-10V,I E =0,f =1MHz 45 pF Note 1:Pulse test:PW<300µs,Duty Cycle<2%U TC 2SB 772 P N P EPITAXIAL SILICON TRANSISTORUTC UNISONIC TECHNOLOGIES CO. LTD2QW-R204-002,ACLASSIFICATION OF hFE2RANK Q P E RANGE 100-200 160-320 200-400TYPICAL PERFORMANCE CHARACTERISTICSFig.1 Static characteristics-I c ,C o l l e c t o r c u r r e n t (A )Fig.2 Derating curve of safeoperating areasFig.3 Power DeratingO u t p u t C a p a c i t a n c e (p F )101102103100-Ic,Collector current(mA)-Ic,Collector current(mA)D C c u r r e n t G a i n ,H F E10110210310010101010101010101010。

ISIS7原件汉英对照

ISIS7原件汉英对照常用的：AND 与门ANTENNA 天线BATTERY 直流电源BELL 铃,钟BVC 同轴电缆接插件BRIDEG 1 整流桥(二极管)BRIDEG 2 整流桥(集成块) BUFFER 缓冲器BUZZER 蜂鸣器CAP 电容CAPACITOR 电容CAPACITOR POL 有极性电容CAPVAR 可调电容CIRCUIT BREAKER 熔断丝COAX 同轴电缆CON 插口CRYSTAL 晶振DB 并行插口DIODE 二极管DIODE SCHOTTKY 稳压二极管DIODE VARACTOR 变容二极管DPY_3-SEG 3段LEDDPY_7-SEG 7段LEDDPY_7-SEG_DP 7段LED(带小数点) ELECTRO 电解电容FUSE 熔断器INDUCTOR 电感INDUCTOR IRON 带铁芯电感INDUCTOR3 可调电感JFET N N沟道场效应管JFET P P沟道场效应管LAMP 灯泡LAMP NEDN 起辉器LED 发光二极管METER 仪表MICROPHONE 麦克风MOSFET MOS管MOTOR AC 交流电机MOTOR SERVO 伺服电机NAND 与非门NOR 或非门NOT 非门NPN NPN三极管NPN-PHOTO 感光三极管OPAMP 运放OR 或门PHOTO 感光二极管PNP 三极管NPN DAR NPN三极管PNP DAR PNP三极管POT 滑线变阻器PELAY-DPDT 双刀双掷继电器RES1.2 电阻RES3.4 可变电阻RESISTOR BRIDGE ? 桥式电阻RESPACK ? 电阻SCR 晶闸管PLUG ? 插头PLUG AC FEMALE 三相交流插头SOCKET ? 插座SOURCE CURRENT 电流源SOURCE VOLTAGE 电压源SPEAKER 扬声器SW ? 开关SWITCH ?SW-DPDY ? 双刀双掷开关SW-SPST ? 单刀单掷开关SW-PB 按钮THERMISTOR 电热调节器TRANS1 变压器TRANS2 可调变压器TRIAC ? 三端双向可控硅TRIODE ? 三极真空管VARISTOR 变阻器ZENER ? 齐纳二极管DPY_7-SEG_DP 数码管SW-PB 开关7407 驱动门1N914 二极管74Ls00 与非门74LS04 非门74LS08 与门74LS390 TTL 双十进制计数器7SEG 4针BCD-LED 输出从0-9 对应于4根线的BCD码7SEG 3-8译码器电路BCD-7SEG转换电路ALTERNATOR 交流发电机AMMETER-MILLI mA安培计AND 与门BATTERY 电池/电池组BUS 总线CAP 电容CAPACITOR 电容器CLOCK 时钟信号源CRYSTAL 晶振D-FLIPFLOP D触发器FUSE 保险丝GROUND 地LAMP 灯LED-RED 红色发光二极管LM016L 2行16列液晶可显示2行16列英文字符，有8位数据总线D0-D7，RS，R/W，EN三个控制端口（共14线），工作电压为5V。

OPTISWIRL4070c涡街中文操作手册

= ==
!"
!"#$ %&' !()*!+,
!
!"#$
!
!"
3
OPTISWIRL 4070 C
!"#
2.1.3 a.
! !"#$
==================
!"
!"#
b.
!
= = = = = = = = = = = = = = = = = = = = = = = = ==
!"#$
!"
= = = = = = = = = = = = = = = = = = = = = = = = ==
1.1.6 Timeconst.
00004.0000 s
====
2.1.1 Test l
2.1.1 4mA
4mA 8mA 12mA 16mA 20mA
Contin.Yes
2.1.2 Test p
0.5003Hz
Contin.Yes Contin.No
3.1.1
3.1.1
3.1.1
3.1.1
Yes
Error Msg
2.1.4
!"# !"#$
!"#$%&'()*+ !"#$%&'()*+
!"#$ !%&'()
!"#$%& !'() !"#$%&'()*+,
!"#$%& !
4
OPTISWIRL 4070 C
!"#

上海棱光722s分光光度计操作说明书

z 光谱带宽： 6nm
z 杂光： z 显示标尺：
≤0.5%(τ) (360nm，NaNO2) (T)：0.0～199.9%
(A)：-0.3～2.999
(F)：1～9999
(C)：0～9999
z 电源：
220V±22V 50Hz±1Hz
1
z 尺寸： z 重量：
370×320×190
净重 7kg
毛重 9.5kg
5.1.1 预热...............................................................................................7 5.1.2 调零...............................................................................................7 5.1.3 调整 100%T ..................................................................................7 5.1.4 调整波长.......................................................................................7 5.1.5 改变试样槽位置让不同样品进入光路.......................................8 5.1.6 确定滤光片位置...........................................................................8 5.1.7 改变标尺.......................................................................................8 5.1.8 RS232C 串行数据发送 ................................................................8 5.1.9 数据的发送测试例.......................................................................9

Parker Hannifin 公司工程性合成材料系统部门 B7 型号磨切，方向性泄漏胶带说明书

Click to Go to SECTION Table of ContentsClick to Go to CATALOG Table of Contents 7Catalog EPS 5370/USAPiston Seal B7 ProfileB7 Cross-SectionB7 Profile, U-cup Piston SealThe B7 profile is a non-symmetrical, hydraulic cylinder piston seal. The knife trimmed, beveled lip contacts the bore to provide enhanced low to high pressure sealing and wiping action. When installed, the diameter of the B7 profile is stretched slightly to fit the gland. This ensures a tight static seal with the gland and improves stability inapplication. The B7 profile is available in Parker’s proprietary urethane compounds which provide excellent wear, extrusion resistance and compression set resistance. The B7 profile is a uni-directional seal. Two seals can be placed on a piston, back-to-back, in separate glands, offering bi-directional fluid sealing.Technical DataStandard Temperature Pressure Surface Materials Range Range† Speed P4300A90 -65°F to +275°F 5,000 psi < 1.6 ft/s (-54°C to +135°C) (344 bar) (0.5 m/s)P4301A90 -65°F to +275°F 5000 psi < 1.6 ft/s (-54°C to +135°C) (344 bar) (0.5 m/s)P4700A90 -65°F to +200°F 5,000 psi < 1.6 ft/s (-54°C to +93°C) (344 bar) (0.5 m/s)P5065A88-70°F to +200°F 3,500 psi < 1.6 ft/s(-57°C to +93°C)(241 bar)(0.5 m/s)Alternate Materials: For applications that may require an alternate material, please contact your local Parker representative.†Pressure Range without wear rings. If used with wear rings, see Table 2-4, page 2-5.B7 installed in Piston Gland7Table 7-15. B7 Profile4-Digit Material CodeExample:4300 = 90A Resilon® 4300PolyurethaneSeal NominalAxial WidthExample:.375 x 1000 = 375Gland Depth (x1000)or Seal Nominal RadialCross-SectionExample: .250 x 1000 = 250Gland Dimensions — B7 ProfilePlease refer to Engineering Section 2,page 2-8 for surface finish andadditional hardware considerations.Table 7-16. B7 Profile — Piston Gland Calculation*If used with wear rings, refer to wear ring piston diameter, see Section 9. For custom groove calculations, see Appendix C. Above table reflects recommended cross-sections for bore diameters shown. Alternate cross-sections and additionalsizes may be considered. Consult /eps/FluidPower for hardware specifications, additional cross-sections and sizes, and part number availability. Contact your Parker representative for assistance.。

STMicroelectronics PowerMESH IGBT STGF7NB60SL 产品说明

1/9September 2004STGF7NB60SLN-CHANNEL 7A - 600V - TO-220FPPowerMESH™ IGBTTable 1: General Featuress POLYSILICON GATE VOLTAGE DRIVENs LOW THRESHOLD VOLTAGE s LOW ON-VOLTAGE DROP s LOW GATE CHARGEsHIGH CURRENT CAPABILITYDESCRIPTIONUsing the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Pow-erMESH ™ IGBTs, with outstanding performances.The suffix “S” identifies a family optimized achieve minimum on-voltage drop for low frequency appli-cations (<1kHz).APPLICATIONS s LIGHT DIMMER s STATIC RELAYSTable 2: Order CodesTYPE V CES V CE(sat) (Max) @25°C I C@100°CSTGF7NB60SL600 V< 1.6 V7 ASALES TYPE MARKING PACKAGE PACKAGINGSTGF7NB60SLGF7NB60SLTO-220FPTUBERev.3STGF7NB60SL2/9Table 3: Absolute Maximum ratings(1)Pulse width limited by max. junction temperature.Table 4: Thermal DataELECTRICAL CHARACTERISTICS (T CASE =25°C UNLESS OTHERWISE SPECIFIED)Table 5: OffTable 6: OnSymbol ParameterValue Symbol V CES Collector-Emitter Voltage (V GS = 0)600V V ECR Reverse Battery Protection 20V V GE Gate-Emitter Voltage± 20V I C Collector Current (continuous) at 25°C 15A I C Collector Current (continuous) at 100°C 7A I CM (1)Collector Current (pulsed)20A P TOT Total Dissipation at T C = 25°C 25W Derating Factor0.2W/°C V ISO Insulation Withstand Voltage A.C.2500V T stg Storage Temperature– 55 to 150°CT jOperating Junction TemperatureRthj-case Thermal Resistance Junction-case Max 5°C/W Rthj-ambThermal Resistance Junction-ambient Max62.5°C/WSymbol ParameterTest ConditionsMin.Typ.Max.Unit V BR(CES)Collectro-Emitter Breakdown VoltageI C = 250 µA, V GE = 0600V V BR(ECS)Emitter-Collector Breakdown VoltageI C = 1mA, V GE = 020VI CESCollector-Emitter Leakage Current (V CE = 0)V GE = Max Rating Tc=25°C Tc=125°C10100µA µA I GESGate-Emitter Leakage Current (V CE = 0)V GE = ± 20 V , V CE = 0±100nASymbol ParameterTest Conditions Min.Typ.Max.Unit V GE(th)Gate Threshold Voltage V CE = V GE , I C = 250 µA 1.22.4V V CE(SAT)Collector-Emitter Saturation VoltageV GE =4.5 V, I C = 7A, Tj= 25°C V GE =4.5 V, I C = 7A, Tj= 125°C1.21.1 1.6V V3/9STGF7NB60SLELECTRICAL CHARACTERISTICS (CONTINUED)Table 7: DynamicTable 8: Switching OnTable 9: Switching Off(**)Turn-off losses include also the tail of the collector current.Symbol ParameterTest ConditionsMin.Typ.Max.Unit g fs Forward Transconductance V CE = 15 V , I C = 7 A5S C ies C oes C res Input Capacitance Output Capacitance Reverse Transfer CapacitanceV CE = 25V, f = 1 MHz, V GE = 08006010pF pF pF Q g Q ge Q gc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge V CE = 480V, I C = 7 A,V GE = 5V(see Figure 20)162.58.522nC nC nC I CL Turn-Off SOA Minimum CurrentV clamp = 480 V , Tj = 125°C R G = 1 K Ω, V GE =5V20A tscwShort Circuit Withstand TimeV ce = 0.5 V BR(CES), V GE =5V , Tj = 125°C , R G = 1K Ω14µsSymbol ParameterTest ConditionsMin.Typ.Max.Unit t d(on)t r Turn-on Delay Time Current Rise Time V CC = 480 V, I C = 7 A R G =1K Ω , V GE = 5 V(see Figure 18)1.10.25µs µs (di/dt)on E on Turn-on Current Slope Turn-on Switching LossesV CC = 480 V, I C = 7 A R G =1K Ω V GE = 5 V,Tj = 125°C452.7A/µs mJ Symbol ParameterTest ConditionsMin.Typ.Max.Unit t c Cross-over Time V cc = 480 V, I C = 7 A, R GE = 1K Ω , V GE = 5 V (see Figure 18)2.7µs t r (V off )Off Voltage Rise Time 1.6µs t d (off )Delay Time 5.2µs t f Current Fall Time 1.1µsE off (**)Turn-off Switching Loss 4.1m Jt c Cross-over Time V cc = 480 V, I C = 7 A, R GE = 1K Ω , V GE = 5 V Tj = 125 °C (see Figure 18)4.4µs t r (V off )Off Voltage Rise Time 2.4µs t d (off )Delay Time 6.4µs t f Fall Time1.7µsE off (**)Turn-off Switching Loss7.1m JSTGF7NB60SL4/9Figure 3: Output CharacteristicsFigure 6: Transfer CharacteristicsSTGF7NB60SLFigure 9: Gate Thereshold vs TemperatureFigure 12: Normalized Breakdown Voltage vsage5/9STGF7NB60SL6/9Figure 15: Total Switching Losses vs CollectorFigure 17: Turn-Off SOA7/9STGF7NB60SLFigure 18: Test Circuit for Inductive Load SwitchingFigure 19: Switching WaveformsFigure 20: Gate Charge Test CircuitSTGF7NB60SLTable 10: Revision HistoryDate Revision Description of Changes 04-June-20042Stylesheet update. No content change02-Sep-20043Datasheet updated, see table18/9STGF7NB60SL Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is grantedby implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are notauthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a registered trademark of STMicroelectronicsAll other names are the property of their respective owners© 2004 STMicroelectronics - All Rights ReservedSTMicroelectronics group of companiesAustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America9/9。

维沙伊·西尔康斯IX7842DP数据手册说明书

Vishay SiliconixSi7842DPDocument Number: Dual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURES•Halogen-free According to IEC 61249-2-21Available•LITTLE FOOT ® Plus Schottky•New Low Thermal Resistance PowerPAK ®Package with Low 1.07 mm Profile•100 % R g Tested APPLICATIONS•Bus and Logic DC-DCPRODUCT SUMMARYV DS (V)R DS(on) (Ω)I D (A)300.022 at V GS = 10 V 100.030 at V GS = 4.5 V8.5SCHOTTKY PRODUCT SUMMARYV DS (V)V SD (V)Diode Forward VoltageI F (A)300.50 V at 1.0 A3.0Notes:a.Surface Mounted on 1" x 1" FR4 board.b.See Solder Profile (/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.c.Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise notedParameterSymbol 10 sSteady StateUnit Drain-Source Voltage V DS 30VGate-Source VoltageV GS± 20Continuous Drain Current (T J = 150 °C)a T A = 25 °C I D 10 6.3AT A = 70 °C6.05.0Pulsed Drain CurrentI DM 30Continuous Source Current (Diode Conduction)aI S 2.9 1.1Maximum Power Dissipation aT A = 25 °CP D 3.5 1.4W T A = 70 °C2.20.9Operating Junction and Storage T emperature Range T J , T stg- 55 to 150°CSoldering Recommendations (Peak Temperature)b,c260THERMAL RESISTANCE RATINGSParameterSymbol MOSFET SchottkyUnit Typical Maximum Typical Maximum Maximum Junction-to-Ambient a t ≤ 10 s R thJA 26352635°C/WSteady State 60856085Maximum Junction-to-Case (Drain)Steady StateR thJC3.9 5.53.9 5.5 Document Number: 71617Vishay SiliconixSi7842DPNotes:a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.b. Guaranteed by design, not subject to production testing.Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.SPECIFICATIONS T J = 25 °C, unless otherwise notedParameter S ymbol Test Condition Min. Typ.bMax.UnitStaticGate Threshold Voltage V GS(th) V DS = V GS , I D = 250 µA 0.82.4V Gate-Body LeakageI GSSV DS = 0 V, V GS = ± 20 V ± 100nAZero Gate Voltage Drain CurrentI DSSV DS = 30 V , V GS = 0 VCh-11µA Ch-2100V DS = 30 V , V GS = 0 V , T J = 85 °CCh-115Ch-22000On-State Drain Current aI D(on) V DS = 5 V , V GS = 10 V 20A Drain-Source On-State Resistance a R DS(on) V GS = 10 V , I D = 7.5 A 0.0180.022ΩV GS = 4.5 V , I D = 6.5 A 0.0240.030Forward T ransconductance a g fs V DS = 15 V, I D = 7.5 A 22S Diode Forward Voltage a V SDI S = 1 A, V GS = 0 VCh-10.8 1.2V Ch-20.470.5Dynamic bTotal Gate Charge Q g V DS = 15 V , V GS = 10 V , I D = 7.5 A1320nCGate-Source Charge Q gs 2Gate-Drain Charge Q gd 2.7Gate Resistance R g 0.51.2 3.2ΩTurn-On Delay Time t d(on) V DD = 15 V , R L = 15 Ω I D ≅ 1 A, V GEN = 10 V , R g = 6 Ω816ns Rise Timet r 1020Turn-Off Delay Time t d(off) 2140Fall Timet f 1020Source-Drain Reverse Recovery Timet rrI F = 1.7 A, dI/dt = 100 A/µsCh-14080Ch-23270SCHOTTKY SPECIFICATIONS T J = 25 °C, unless otherwise notedParameter S ymbol Test Condition Min. Typ.Max.UnitForward Voltage DropV FI F = 1.0 A 0.470.50VI F = 1.0 A, T J = 125 °C0.360.42Maximum Reverse Leakage Current I rm V r = 30 V0.0040.100mA V r = 30 V , T J = 100 °C 0.710V r = – 30 V , T J = 125 °C3.020Junction CapacitanceC TV r = 10 V50pFDocument Number: Document Number: 71617Vishay SiliconixSi7842DPMOSFET TYPICAL CHARACTERISTICS 25°C, unless otherwise notedSource-Drain Diode Forward VoltageThreshold VoltageOn-Resistance vs. Gate-to-Source VoltageSingle Pulse PowerNormalized Thermal Transient Impedance, Junction-to-AmbientDocument Number: Vishay SiliconixSi7842DPMOSFET TYPICAL CHARACTERISTICS 25°C, unless otherwise notedSCHOTTKY TYPICAL CHARACTERISTICS 25°C, unless otherwise notedVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?71617.Reverse Current vs. Junction TemperaturePackage Information Vishay SiliconixPowerPAK® SO-8, (Single/Dual)Revison: 20-May-131Document Number: 71655Application Note 826Vishay SiliconixA P P L I C A T I O N N O T ERECOMMENDED MINIMUM PADS FOR PowerPAK ® SO-8 DualLegal Disclaimer Notice VishayDisclaimerALL PRODU CT, PRODU CT SPECIFICATIONS AND DATA ARE SU BJECT TO CHANGE WITHOU T NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.Material Category PolicyVishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.Revision: 02-Oct-121Document Number: 91000。

G7SA-4A2B中文资料

G7SA-4A2B中文资料Relays with Forcibly Guided ContactsG7SASlim Relays with Forcibly Guided Contacts Conform-ing to EN StandardsEN50205 Class A, approved by VDE.Ideal for use in safety circuits in production machin-ery.Four-pole and six-pole Relays are available.The Relay’s terminal arrangement simplifies PWB pattern design.Reinforced insulation between inputs and outputs. Reinforced insulation between some poles.?UL, CSA approval.Ordering InformationRelays with Forcibly Guided ContactsSocketsModel Number Legend2:DPST -NO 3:3PST -NO 4:4PST -NO 5:5PST -NO 2.NC Contact Poles 1:SPST -NC 2:DPST -NC 3:3PST -NCTypeSealingPolesContactsRated voltageModelStandardFlux-tight4 poles3PST-NO, SPST-NC 24 VDCG7SA-3A1B DPST-NO, DPST-NC G7SA-2A2B 6 poles5PST-NO, SPST-NC G7SA-5A1B 4PST-NO, DPST-NC G7SA-4A2B 3PST-NO, 3PST-NCG7SA-3A3BTypeLED indicatorPoles Rated voltage Model Track-mountingTrack mounting and screw mounting possibleNo4 poles ---P7SA-10F 6 poles P7SA-14F Yes4 poles 24 VDC P7SA-10F-ND 6 poles P7SA-14F-ND Back-mountingPCB terminalsNo4 poles ---P7SA-10P 6 polesP7SA-14PG 7S ASpecificationsRatingsCoilNote:1.The rated current and coil resistance are measured ata coil temperature of 23°C with tolerances of ±15%.2.Performance characteristics are based on a coil temperature of 23°C.3.The value given for the maximum voltage is for voltages applied instantaneously to the Relay coil (at an ambient temperature of 23°C) and not continuously.ContactsRated voltage Rated currentCoil resistanceMust-operate voltage Must-release voltage Max. voltage Power consumption 24 VDC4 poles: 15 mA6 poles: 20.8mA 4poles:1,600W 6 poles: 1,152 W75% max. (V)10% min. (V)110% (V)4poles:Approx.360mW 6 poles: Approx. 500mWLoadResistive load (cos f =1)Rated load6 A at 250 VAC, 6 A at 30 VDC Rated carry current 6 AMax. switching voltage 250 VAC, 125 VDC Max. switching current6 AMax. switching capacity (reference value)1,500 VA, 180 WCharacteristicsSocketsNote:1.If the P7SA-1#F is used between 55 and 85°C, reduce the continuous current (from 6 A) by 0.1 A for every degree.2.Measurement conditions: Measurement of the same points as for the dielectric strength at 500 VDC.3.When using the P7SA-1#F-ND at 24 VDC, use at an ambient operating temperature from -25 to 55°C.Relays with Forcibly Guided ContactsNote:1.The values listed above are initial values.2.These times were measured at the rated voltage and anambient temperature of 23°C. Contact bounce time is not included.3.Pole 3 refers to terminals 31-32 or 33-34, pole 4 refers to terminals 43-44, pole 5 refers to terminals 53-54, and pole 6 refers to terminals 63-64.4.When using a P7SA Socket, the dielectric strength between coil contacts/different poles is 2,500 VAC, 50/60 Hz for 1 min.5.Min. permissible load is for a switching frequency of 300 operations/min.6.When operating at a temperature between 70°C and 85°C, reduce the rated carry current (6 A at 70°C or less) by 0.1 A for each degree above 70°C.Model Continuous current Dielectric strengthInsulation resistanceP7SA-14#6 A (see note 1)2,500 VAC for 1 min. between poles100 M W min. (see note 2)Contact resistance 100 m W max.(The contact resistance was measured with 1 A at 5 VDC using the voltage-drop method.)Operating time (see note 2)20 ms max.Response time (see note 2)10 ms max. (The response time is the time it takes for the normally open contacts to open after the coil voltage is turned OFF.)Release time (see note 2)20 ms max.Maximum operating frequencyMechanical 36,000 operations/hr Rated load1,800 operations/hrInsulation resistance100 M W min. (at 500 VDC)(The insulation resistance was measured with a 500-VDC megger at the same places that the dielectric strength was measured.)Dielectric strength (see notes 3, 4)Between coil contacts/different poles: 4,000 VAC, 50/60 Hz for 1 min (2,500 VAC between poles 3-4 in 4-pole Relays or poles 3-5, 4-6, and 5-6 in 6-pole Relays.)Between contacts of same polarity: 1,500 VAC, 50/60 Hz for 1 min Vibration resistance10 to 55 Hz, 1.5-mm double amplitude Shock resistanceDestruction 1,000 m/s 2Malfunction 100 m/s 2DurabilityMechanical10,000,000 operations min. (at approx. 36,000 operations/hr) Electrical100,000 operations min. (at the rated load and approx. 1,800 operations/hr)Min. permissible load (see note 5) (reference value) 5 VDC, 1 mAAmbient temperature (see note 6)Operating:-40°C to 85°C (with no icing or condensation)Storage:-40°C to 85°C (with no icing or condensation)Ambient humidity Operating:35% to 85%Storage:35% to 85%Weight4 poles: Approx. 22 g 6 poles: Approx. 25 gApproved standardsEN61810-1 (IEC61810-1), EN50205, UL508, CSA22.2 No. 14G 7S ADimensionsNote:All units are in millimeters unless otherwise indicated. The diagrams are drawn in perspective.Relays with Forcibly Guided Contacts 0.50.5 3.510.50.53.51G7SA-2A2BG7SA-4A2BG7SA-3A3B40 max.13 max.24 max.Ten, 1.4 dia.50 max.13 max.24 max.Fourteen, 1.4 dia.G7SA-3A1BG7SA-5A1BSockets6P7SA-10F, P7SA-10F-NDwo, 4 dia. or M3.54 dia.22.5 max.60.5 max.9 max.72 max.9 max.P7SA-14F, P7SA-14F-ND4 dia.30 max.60.5 max.9 max.72 max.9 max.Two, 4 dia. or M3.5Note: Only the -ND Sockets have LED indicators.T en, M3LED indicatorNote: The socket is shown withthe finger cover removed.G7SA-3A1B LED indicatorFourteen, M3MountedMountedMounted(Top View)"-ND" models.Note: Terminals 23-24,33-34, 43-44, 53-54, and 63-64 are normally open. T erminals 11-12, 21-22, and 31-32 are normally closed.G 7S AP7SA-10P Back-mounting Socket (for PCB)50 max.41.5 max.Ten, 1.1 dia.15 max.Three, 2.6 dia.(for M3 tapping screws)Terminal Arrangement/Internal Connection Diagram (Bottom View)MountedG7SA-2A2B MountedThree, 3.2 dia.(for M3 tapping screws)60 max.41.5 max.15 max.Three, 2.6 dia.(for M3 tapping screws)MountedG7SA-4A2B MountedG7SA-3A3B MountedFourteen, 1.1 dia.Three, 3.2 dia. (for M3 tapping screws)Precautionsarea (charged area) while power is ON. Electric shock will result.Relays with Forcibly Guided ContactsA Relay with Forcibly Guided Contacts is a Relay with which a safety category circuit can be configured.WiringUse one of the following wires to connect to the P7SA-10F/10F-ND/ 14F/14F-ND.Stranded wire:0.75 to 1.5 mm2Solid wire:1.0 to 1.5 mm2Tighten each screw of the P7SA-10F/10F-ND/14F/14F-ND to a torque of 0.98 N·m securely.Wire the terminals correctly with no mistakes in coil polarity,other-wise the G7SA will not operate.CleaningThe G7SA is not of enclosed construction. Therefore, do not wash the G7SA with water or detergent.Forcibly Guided Contacts (from EN50205)If an NO contact becomes welded, all NC contacts will maintain a minimum distance of 0.5 mm when the coil is not energized. Like-wise if an NC contact becomes welded, all NO contacts will maintain a minimum distance of 0.5mm when the coil is energized.Correct UseRelays with Forcibly Guided ContactsWhile the Relay with Forcibly Guided Contacts has the previously described forcibly guided contact structure, it is basically the same as an ordinary relay in other respects. Rather than serving to prevent malfunctions, the forcibly guided contact structure enables another circuit to detect the condition following a contact weld or other mal-function. Accordingly, when a contact weld occurs in a Relay with Forcibly Guided Contacts, depending on the circuit configuration, the power may not be interrupted, leaving the Relay in a potentially dan-gerous condition (as shown in Fig. 1.)To configure the power control circuit to interrupt the power when a contact weld or other malfunction occurs, and to prevent restarting until the problem has been eliminated, add another Relay with Forc-ibly Guided Contacts or similar Relay in combination to provide redundancy and a self-monitoring function to the circuit (as shown in Fig. 2).The G9S/G9SA Safety Relay Unit, which combines Relays such as the Relay with Forcibly Guided Contacts in order to provide the above-described functions, is available for thispurpose. By connect-ing a contactor with appropriate input and output to the Safety Relay Unit, the circuit can be equipped with redundancy and a self-monitor-ing function.。

2DC4617S-7资料

2DC4617Q/R/SNPN SMALL SIGNAL SURFACE MOUNT TRANSISTORMaximum Ratings@T A = 25°C unless otherwise specifiedDS30252 Rev. 9 - 2 1 of 32DC4617Q/R/S © Diodes IncorporatedCharacteristic Symbol Value Unit Collector-Base Voltage V CBO60 V Collector-Emitter Voltage V CEO50 V Emitter-Base Voltage V EBO7.0 V Collector Current - Continuous (Note 1)I C150 mAThermal Characteristics @T A = 25°C unless otherwise specifiedCharacteristic Symbol Value Unit Power Dissipation (Note 1)P d150 mW Thermal Resistance, Junction to Ambient (Note 1)RθJA833 °C/WOperating and Storage Temperature Range T j, T STG-55 to +150 °C Electrical Characteristics@T A = 25°C unless otherwise specifiedCharacteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 2)Collector-Base Breakdown Voltage V(BR)CBO60 ⎯⎯V I C = 50μA, I E = 0Collector-Emitter Breakdown Voltage V(BR)CEO50 ⎯⎯V I C = 1.0mA, I B = 0Emitter-Base Breakdown Voltage V(BR)EBO7.0 ⎯⎯V I E = 50μA, I C = 0Collector Cutoff Current I CBO⎯⎯100nA V CB = 60VEmitter Cutoff Current I EBO⎯⎯100nA V EB = 7.0VON CHARACTERISTICS (Note 2)DC Current Gain 2DC4617Q2DC4617R 2DC4617S h FE120180270⎯⎯⎯270390560⎯V CE = 6.0V, I C = 1.0mACollector-Emitter Saturation Voltage V CE(SAT)⎯⎯0.4 V I C = 50mA, I B = 5.0mASMALL SIGNAL CHARACTERISTICSOutput Capacitance C obo⎯ 2.0 3.5 pF V CB = 12V, f = 1.0MHz, I E = 0Current Gain-Bandwidth Product f T⎯180⎯MHz V CE = 12V, I E = -2mA, f = 1MHzCurrent Gain-Bandwidth Product f T180 Typ.⎯MHz V CE = 12V, I E = 0A, f = 1MHzCurrent Gain-Bandwidth Product f T180 Typ.⎯MHz V CE = 12V, I C = -2.0mA,f = 100MHzNotes: 1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at /datasheets/ap02001.pdf.2. Short duration pulse test used to minimize self-heating effect.3. No purposefully added lead.4. Diodes Inc.'s "Green" policy can be found on our website at /products/lead_free/index.php.5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to DateCode UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.T , AMBIENT TEMPERATURE (C)Fig. 1 Power Derating CurveA °P , P O W E R D I S S I P A T I O N (m W )dV , C O L L E C T O R T O E M I T T E R S A T U R A T I O N V O L T A G E (V )C E (S A T )I , COLLECTOR CURRENT (mA)Fig. 2 Collector Emitter Saturation Voltagevs. Collector Current Cf , G A I N B A N D W I D T H P R O D U C T (M H z )T I , COLLECTOR CURRENT (mA)Fig. 3 Gain Bandwidth Product vs. Collector Current CDS30252 Rev. 9 - 2 2 of 3 2DC4617Q/R/S© Diodes IncorporatedOrdering Information (Note 6)DS30252 Rev. 9 - 2 3 of 3 2DC4617Q/R/S© Diodes IncorporatedDevice Packaging Shipping2DC4617Q-7-F SOT-523 3000/Tape & Reel 2DC4617R-7-F SOT-523 3000/Tape & Reel 2DC4617S-7-FSOT-5233000/Tape & ReelNotes:6. For packaging details, go to our website at /datasheets/ap02007.pdf.Marking InformationXX = Product Type Marking Code (See Page 1, e.g. 8D = 2DC4617Q) YM = Date Code Marking Y = Year (ex: N = 2002)M = Month (ex: 9 = September)Date Code KeyYear1998 1999 2000 2001 2002200320042005 2006 2007 2008 2009 2010 2011 2012Code J K LM N P RST U V W X Y ZMonth Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 123456789ONDIMPORTANT NOTICEDiodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.LIFE SUPPORTDiodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.。