V23990-P371-D01-PM中文资料

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JUMO设备型号说明书

Data Sheet 70.9770
Page 2/2
Accessories for Programmers, Thermostats, Microstats and Controllers
Device designation
DICON 400/500 DICON 401/501
Data Sheet 70.3570 Data Sheet 70.3580
Software programs1 (multilingual)
x
Setup program, program editor and Startup
x
Setup program
x
Setup program
x
Setup program
x
Program editor
x
Setup program and program editor
e-mail:
mail@
Internet:

JUMO Instrument Co. Ltd. JUMO House Temple Bank, Riverway Harlow, Essex CM 20 2TT, UK Phone: +44 1279 635533 Fax: +44 1279 635262 e-mail: sales@ Internet:
eTRON T eTRON M
Data Sheet 70.1050 Data Sheet 70.1060
eTRON M100
Data Sheet 70.1061
iTRON 04 B
Data Sheet 70.2050
mTRON
Data Sheet 70.4010 ... 45

联想笔记本系列配置

机型名称配置媒体价格家电下乡机型 IdeaPadZ360APP6100W32G320PLxW3(VIXX)-CN P6100 (2.13G)/13.0’WXGA/2GB DDR3/320GHDD/DVD刻录/Geforce G310M独立显卡 512MB 独立/10M-100M/ Meego Linux /无线局域网卡/130万像素高清摄像头/HDMI高清接口/新下乡软件礼包/炫粉 4399 家电下乡机型 IdeaPadZ370AXB9602G500RMG(PIXX)CN B960 2.2GHz / 13.3" WXGA/2GB DDR3/500G HDD/超级DVD刻录/ NVIDIA GeForce G410M 高性能独立显卡1G DDR3独立显存/10M-100M网卡 / Meego Linux / BGN无线局域网卡/内置30万像素高感光摄像头/专业调 4299 家电下乡机型 deaPadZ370AXB9602G500RMG(BKXX)CN B960 2.2GHz / 13.3" WXGA/2GB DDR3/500G HDD/超级DVD刻录/ NVIDIA GeForce G410M 高性能独立显卡1G DDR3独立显存/10M-100M网卡 / Meego Linux / BGN无线局域网卡/内置30万像素高感光摄像头/专业调 4299 家电下乡机型 deaPadZ370AXB9602G500RMG(BLXX)CN B960 2.2GHz / 13.3" WXGA/2GB DDR3/500G HDD/超级DVD刻录/ NVIDIA GeForce G410M 高性能独立显卡1G DDR3独立显存/10M-100M网卡 / Meego Linux / BGN无线局域网卡/内置30万像素高感光摄像头/专业调 4299 家电下乡机型 IdeaPadZ370At

NTE2399中文资料

Source–Drain Ratings and Characteristics:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn–On Time Symbol IS ISM VSD trr Qrr ton Note 1 TJ = +25°C, IS = 3.1A, VGS = 0V, Note 4 TJ = +25°C, IF = 3.1A, di/dt = 100A/µs, Note 4 Test Conditions Min – – – – – Typ – – – 410 1.3 Max 3.1 12 1.8 620 2.0 Unit A A V ns µC
元器件交易网
.420 (10.67) Max
.110 (2.7 (12.7) Max
.250 (6.35) Max .500 (12.7) Min .070 (1.78) Max
Gate .100 (2.54)
Source Drain/Tab
元器件交易网
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter Drain–to–Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain–to–Source On–Resistance Gate Threshold Voltage Forward Transconductance Drain–to–Source Leakage Current Symbol V(BR)DSS Test Conditions VGS = 0V, ID = 250µA Min 1000 – – 2.0 2.1 – – – – – – – VDD = 500V, ID = 3.1A, RG = 12Ω, RD = 170Ω, Note 4 Ω – – – – Between lead, .250in. (6.0) mm from package and center of die contact VGS = 0V, VDS = 25V, f = 1MHz – – – – – Typ – 1.4 – – – – – – – – – – 12 25 89 29 4.5 7.5 980 140 50 Max – – 0.50 4.0 – 100 500 –100 100 80 10 42 – – – – – – – – – Unit V V/°C Ω V mhos µA µA nA nA nC nC nC ns ns ns ns nH nH pF pF pF

海信总线进入方式及各种机型配遥控器

海信电视机机型、机芯、遥控器一览表
序号 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 机型 DB-118S DB-2000HD DB-2001HDC DB-200M DB-318S DB-518C DB-558CP DB-628C DB-688S DL-5011 DP-2902H DP-2906G DP-2906H DP2908U DP2910L DP2988F DP2988F DP2988G/H DP2999/G DP3488 DP3490 DP3499 DVR-2000 DVR-2001 ETV-2988 HDP2902D HDP2902H HDP2902G HDP2906D HDP2906H HDP2908 HDP2911 HDP2911H HDP2919 HDP2919H HDP2999D HDP3406D HDP3406H HDP3411 HDP3411GB HDP3411H HDP3419H HDP3419CH HDT4311G HDT4311H HDT4311PG HDT4311PH 机芯卫星机顶合高清机顶合有线机顶合网络机顶合卫星机顶合有线机顶合有线机顶合有线机顶合卫星机顶合光显背投 NDSP倍频飞利普泰鼎三洋三洋泰鼎泰鼎泰鼎 NDSP倍频泰鼎 NDSP倍频 NDSP倍频回放机顶合回放机顶合西门子倍频飞利普高清泰鼎飞利普高清泰鼎飞利普高清飞利普高清 GS高清泰鼎高清 GS高清飞利普高清飞利普高清泰鼎高清飞利普高清 GS高清 GS高清高清倍投高清倍投高清倍投高清倍投遥控器型号 HYDFSR-0038 HYDFSR-0059 HYDFSR-0064 HYDFSR-0034 HYDFSR-0050 HYDFSR-0050 HYDFSR-0068 HYDFSR-0107 HYDFSR-0110 HYDFSR-0116 HYDFSR-0070 HYDFSR-0070 HYDFSR-0084 HYDFSR-0109 HYDFSR-0109 HYDFSR-0049 HYDFSR-0058 HYDFSR-0058 HYDFSR-0070 HYDFSR-0058 HYDFSR-0070 HYDFSR-0070 HYDFSR-0061 HYDFSR-0061 HY-2010 HYDFSR-0070A HYDFSR-0111 HYDFSR-0133 HYDFSR-0070A HYDFSR-0111 HYDFSR-0070A HYDFSR-0070A HYDFSR-0070A HYDFSR-0111 HYDFSR-0070A HYDFSR-0070A HYDFSR-0070A HYDFSR-0111 HYDFSR-0070A HYDFSR-0103 HYDFSR-0070A HYDFSR-0070A HYDFSR-0133 HYDFSR-0106 HYDFSR-0097 HYDFSR-0106 HYDFSR-0106

浪潮服务器商品编码部件产品名称 Q1对应编码 Q1对应配件名称

商品编码部件产品名称Q1对应编码Q1对应配件名称CPUSPT0CPU0002H Inspur NF8460M3,NF8465M3Inbbb Xeon E7-4809v2(6C,105W,1.9GHz)Processor Option Kit BCX305XeonE7-4809v2(1.9GHz/6c)/6.4GT/12ML3 SPT0CPU0002I Inspur NF8460M3,NF8465M3Inbbb Xeon E7-4820v2(8C,105W,2.0GHz)Processor Option Kit BCX306XeonE7-4820v2(2.00GHz/8c)/7.2GT/16ML3 SPT0CPU0002J Inspur NF8460M3,NF8465M3Inbbb Xeon E7-4830v2(10C,105W,2.2GHz)Processor Option Kit BCX307XeonE7-4830v2(2.2GHz/10c)/7.2GT/20ML3 SPT0CPU0002K Inspur NF8460M3,NF8465M3Inbbb Xeon E7-4850v2(12C,105W,2.4GHz)Processor Option Kit BCX308XeonE7-4850v2(2.3GHz/12c)/7.2GT/24ML3 SPT0CPU0002L Inspur NF8460M3,NF8465M3Inbbb Xeon E7-4860v2(12C,130W,2.6GHz)Processor Option Kit BCX309XeonE7-4860v2(2.6GHz/12c)/8.0GT/30ML3 SPT0CPU0002M Inspur NF8460M3,NF8465M3Inbbb Xeon E7-4870v2(15C,130W,2.3GHz)Processor Option Kit BCX310XeonE7-4870v2(2.3GHz/15c)/8.0GT/30ML3 SPT0CPU0002N Inspur NF8460M3,NF8465M3Inbbb Xeon E7-4880v2(15C,130W,2.5GHz)Processor Option Kit BCX311XeonE7-4880v2(2.5GHz/15c)/8.0GT/37.5ML3 SPT0CPU0002O Inspur NF8460M3,NF8465M3Inbbb Xeon E7-4890v2(15C,155W,2.8GHz)Processor Option Kit BCX312XeonE7-4890v2(2.8GHz/15c)/8.0GT/37.5ML3 SPT0CPU0002P Inspur NF8460M3,NF8465M3Inbbb Xeon E7-8857v2(12C,130W,3.0GHz)Processor Option Kit XeonE7-8857v2-Xeon3_8.0G_30M_12CSPT0CPU0002Q Inspur NF8460M3,NF8465M3Inbbb Xeon E7-8850v2(12C,105W,3.0GHz)Processor Option Kit BCX437XeonE7-8850v2-Xeon2.3_7.2G_24M_12C SPT0CPU0002R Inspur NF8460M3,NF8465M3Inbbb Xeon E7-8870v2(15C,130w,2.3GHz)Processor Option Kit XeonE7-8870v2-Xeon2.3_8.0G_30M_15CSPT0CPU0002S Inspur NF8460M3,NF8465M3Inbbb Xeon E7-8891v2(10C,155W,3.2GHz)Processor Option Kit XeonE7-8891v2-Xeon3.2_8G_37.5M_10CSPT0CPU0002T Inspur NF8460M3,NF8465M3Inbbb Xeon E7-8893v2(6C,155W,3.4GHz)Processor Option Kit XeonE7-8893v2-Xeon3.4_8G_37.5M_6CSPT0CPU0002U Inspur NF8460M4,NF8465M4Inbbb Xeon E7-4809v3(8C,115W,2.0GHz)Processor Option Kit BCX377XeonE7-4809v3(2.0GHz/8c)/6.4GT/20ML3 SPT0CPU0002V Inspur NF8460M4,NF8465M4Inbbb Xeon E7-4820v3(10C,115W,1.9GHz)Processor Option Kit BCX376XeonE7-4820v3(1.9GHz/10c)/6.4GT/25ML3 SPT0CPU0002W Inspur NF8460M4,NF8465M4Inbbb Xeon E7-4830v3(12C,115W,2.1GHz)Processor Option Kit BCX375XeonE7-4830v3(2.1GHz/12c)/8.0GT/30ML3 SPT0CPU0002X Inspur NF8460M4,NF8465M4Inbbb Xeon E7-4850v3(14C,115W,2.2GHz)Processor Option Kit BCX374XeonE7-4850v3(2.2GHz/14c)/8.0GT/35ML3 SPT0CPU0002Y Inspur NF8460M4,NF8465M4Inbbb Xeon E7-8860v3(16C,140W,2.2GHz)Processor Option Kit BCX373XeonE7-8860v3(2.2GHz/16c)/9.6GT/40ML3 SPT0CPU00030Inspur NF8460M4,NF8465M4Inbbb Xeon E7-8870v3(18C,140W,2.1GHz)Processor Option Kit BCX372XeonE7-8870v3(2.1GHz/18c)/9.6GT/45ML3 SPT0CPU00032Inspur NF8460M4,NF8465M4Inbbb Xeon E7-8880v3(18C,150W,2.3GHz)Processor Option Kit BCX371XeonE7-8880v3(2.3GHz/18c)/9.6GT/45ML3 SPT0CPU00033Inspur NF8460M4,NF8465M4Inbbb Xeon E7-8890v3(18C,165W,2.5GHz)Processor Option Kit BCX370XeonE7-8890v3(2.5GHz/18c)/9.6GT/45ML3 SPT0CPU0002Z Inspur NF8460M4,NF8465M4Inbbb Xeon E7-8867v3(16C,165W,2.5GHz)Processor Option Kit BCX369XeonE7-8867v3(2.5GHz/16c)/9.6GT45ML3 SPT0CPU00034Inspur NF8460M4,NF8465M4Inbbb Xeon E7-8891v3(10C,165W,2.8GHz)Processor Option Kit BCX368XeonE7-8891v3(2.8GHZ/10c)/9.6GT/45ML3 SPT0CPU00035Inspur NF8460M4,NF8465M4Inbbb Xeon E7-8893v3(4C,140W,3.2GHz)Processor Option Kit BCX367XeonE7-8893v3(3.2GHz/4c)/9.6GT/45ML3 SPT0CPU00003Inspur NF5280M4,NF5270M4Inbbb Xeon E5-2609v3(6C,85W,1.9GHz)Processor Option Kit BCX323E5-2609v3(1.9GHz/6c)/6.4GT/15ML3SPT0CPU00004Inspur NF5280M4,NF5270M4Inbbb Xeon E5-2620v3(6C,85W,2.4GHz)Processor Option Kit BCX324E5-2620v3(2.4GHz/6c)/8GT/15ML3SPT0CPU00005Inspur NF5280M4,NF5270M4Inbbb Xeon E5-2630v3(8C,85W,2.4GHz)Processor Option Kit BCX325E5-2630v3(2.4GHz/8c)/8GT/20ML3SPT0CPU00006Inspur NF5280M4,NF5270M4Inbbb Xeon E5-2637v3(4C,135W,3.5GHz)Processor Option Kit E5-2637v3(3.5GHz/4c)/9.6GT/15ML3SPT0CPU00007Inspur NF5280M4,NF5270M4Inbbb Xeon E5-2640v3(8C,90W,2.6GHz)Processor Option Kit BCX326E5-2640v3(2.6GHz/8c)/8GT/20ML3SPT0CPU00008Inspur NF5280M4,NF5270M4Inbbb Xeon E5-2643v3(6C,135W,3.4GHz)Processor Option Kit BCX339E5-2643v3(3.4GHz/6c)/9.6GT/20ML3SPT0CPU00009Inspur NF5280M4,NF5270M4Inbbb Xeon E5-2650v3(10C,105W,2.3GHz)Processor Option Kit BCX327E5-2650v3(2.3GHz/10c)9.6GT/25ML3SPT0CPU00010Inspur NF5280M4,NF5270M4Inbbb Xeon E5-2660v3(10C,105W,2.6GHz)Processor Option Kit BCX328E5-2660v3(2.6GHz/10c)9.6GT/25ML3 SPT0CPU00011Inspur NF5280M4,NF5270M4Inbbb Xeon E5-2667v3(8C,135W,3.2GHz)Processor Option Kit E5-2667v3(3.2GHz/8c)9.6GT/20ML3SPT0CPU00012Inspur NF5280M4,NF5270M4Inbbb Xeon E5-2670v3(12C,120W,2.3GHz)Processor Option Kit BCX329E5-2670v3(2.3GHz/12c)9.6GT/30ML3 SPT0CPU00013Inspur NF5280M4,NF5270M4Inbbb Xeon E5-2680v3(12C,120W,2.5GHz)Processor Option Kit BCX330E5-2680v3(2.5GHz/12c)9.6GT/30ML3 SPT0CPU00015Inspur NF5280M4,NF5270M4Inbbb Xeon E5-2690v3(12C,135W,2.6GHz)Processor Option Kit BCX331E5-2690v3(2.6GHz/12c)9.6GT/30ML3 SPT0CPU00016Inspur NF5280M4,NF5270M4Inbbb Xeon E5-2695v3(14C,120W,2.3GHz)Processor Option Kit BCX333E5-2695v3(2.3GHz/14c)9.6GT/35ML3 SPT0CPU00017Inspur NF5280M4Inbbb Xeon E5-2697v3(14C,145W,2.6GHz)Processor Option Kit BCX334E5-2697v3(2.6GHz/14c)9.6GT/35ML3SPT0CPU00018Inspur NF5280M4Inbbb Xeon E5-2698v3(16C,135W,2.3GHz)Processor Option Kit BCX335E5-2698v3(2.3GHz/16c)9.6GT/40MLSPT0CPU00019Inspur NF5280M4Inbbb Xeon E5-2699v3(18C,145W,2.3GHz)Processor Option Kit E5-2699v3(2.3GHz/18c)9.6GT/45ML3SPT0CPU00014Inspur NF5280M4,NF5270M4Inbbb Xeon E5-2683v3(14C,120W,2.0GHz)Processor Option Kit E5-2683v3(2.0GHz/14C)/9.6GT/35ML3 BCX438XeonE3-1220V5(3.0GHZ)/8M/4CBCX439XeonE3-1230V5(3.40GHZ)/8M/4CBCX440XeonE3-1240V5(3.50GHZ)/8M/4CBCX441XeonE3-1240LV5(2.10GHZ)/8M/4CBCX442XeonE3-1260LV5(2.90GHZ)/8M/4CBCX443XeonE3-1270V5(3.60GHZ)/8M/4CBCX444XeonE3-1280V5(3.70GHZ)/8M/4CBCX445i3-6320(3.9GHz)/4M/2CBCX446i3-6300T(3.3GHz)/4M/2CBCX447i3-6300(3.8GHz)/4M/2CBCX448i3-6100T(3.2GHz)/3M/2CBCX449i3-6100(3.7GHz)/3M/2CBCX450G4520(3.0GHz)/3M/2CBCX451G4500T(3.0GHz)/3M/2CBCX452G4500(3.5GHz)/3M/2CBCX453G4400(3.3GHz)/3M/2CBCX322E5-2603v3(1.6GHz/6c)/6.4GT/15ML3BCX401E5-2603v4(1.7GHz/6c)/6.4GT/15ML3BCX402E5-2609v4(1.7GHz/8c)/6.4GT/20ML3BCX403E5-2620v4(2.1GHz/8c)/8GT/20ML3BCX406E5-2630v4(2.2GHz/10c)/8GT/25ML3BCX408E5-2640v4(2.4GHz/10c)/8GT/25ML3BCX412E5-2650v4(2.2GHz/12c)9.6GT/30ML3BCX414E5-2660v4(2.0GHz/14c)9.6GT/35ML3 BCX416E5-2680v4(2.4GHz/14c)9.6GT/35ML3 BCX419E5-2690v4(2.6GHz/14c)9.6GT/35ML3 BCX404E5-2623v4(2.6GHz/4c)8.0GT/10ML3 BCX407E5-2637v4(3.5GHz/4c)/9.6GT/15ML3 BCX409E5-2643v4(3.4GHz/6c)/9.6GT/20ML3 BCX415E5-2667v4(3.2GHz/8c)9.6GT/25ML3 BCX417E5-2683v4(2.1GHz/16c)/9.6GT/40ML3 BCX420E5-2695v4(2.1GHz/18c)9.6GT/45ML3 BCX422E5-2697v4(2.3GHz/18c)9.6GT/45ML3 BCX421E5-2697Av4(2.6GHz/16c)9.6GT/40ML3 BCX423E5-2698v4(2.2GHz/20c)9.6GT/50ML BCX424E5-2699v4(2.2GHz/22c)9.6GT/55ML3 BCX405E5-2630LV4(1.8GHz/10c)8.0GT/25ML3 BCX411E5-2650LV4(1.7GHz/14c)9.6GT/35ML3 BCX410E5-2648LV4(1.8GHz/14c)9.6GT/35ML3 BCX413E5-2658V4(2.3GHz/14c)9.6GT/35ML3 BCX418E5-2687WV4(3.0GHz/12c)9.6GT/35ML3 BCX425XeonE7-4809v4(2.1GHz/8C)/6.4GT/20ML3 BCX426XeonE7-4820v4(2.0GHz/10C)/6.4GT/25ML3 BCX427XeonE7-4830v4(2.0GHz/14C)/8.0GT/35ML3 BCX428XeonE7-4850v4(2.1GHz/16C)/8.0GT/40ML3 BCX429XeonE7-8860v4(2.2GHz/18C)/9.6GT/45ML3 BCX430XeonE7-8855v4(2.1GHz/14C)/8.0GT/35ML3 BCX431XeonE7-8867v4(2.4GHz/18C)/9.6GT/45ML3 BCX432XeonE7-8870v4(2.1GHz/20C)/9.6GT/50ML3 BCX433XeonE7-8880v4(2.2GHz/22C)/9.6GT/55ML3 BCX434XeonE7-8890v4(2.2GHz/24C)/9.6GT/60ML3 BCX435XeonE7-8891v4(2.8GHz/10C)/9.6GT/60ML3 BCX436XeonE7-8893v4(3.2GHz/4C)/9.6GT/60ML3 DDR3内存SPT0MEM00006Inspur32GB DDR3L-1600LRDIMM SPT0MEM00007Inspur16GB DDR3-1866RDIMMSPT0MEM00008Inspur16GB DDR3-1600RDIMMSPT0MEM00009Inspur16GB DDR3L-1600RDIMMSPT0MEM0000A Inspur8GB DDR3-1600RDIMMSPT0MEM0000B Inspur8GB DDR3L-1600RDIMMSPT0MEM0000C Inspur4GB DDR3-1600RDIMMSPT0MEM0000D Inspur4GB DDR3L-1600RDIMMDDR4内存DDR4内存BMD1558G_DDR4_UDIMM-EUBMD15616G_DDR4_UDIMM-EUSPT0MEM00002Inspur8GB DDR4-2133MHz(1Rx4)RDIMM BMD1418G RDIMM DDR4内存SPT0MEM00001Inspur16GB DDR4-2133MHz(2Rx4)RDIMM BMD14216G RDIMM DDR4内存SPT0MEM00003Inspur16GB DDR4-2133MHz(1Rx4)RDIMMSPT0MEM00004Inspur32GB DDR4-2133MHz(2Rx4)RDIMM BMD14332G LRDIMM DDR4内存SPT0MEM00005Inspur32GB DDR4-2133MHz(4Rx4)LRDIMM3.5寸企业级SATA（含托架及包装）3.5寸企业级SATA（含托架及包装）SPT0STG35007Inspur3.5"1TB7.2K Enterprise SATA6Gbps Hot Swap Hard Drive BHT0231TB SATA（企业级）SPT0STG35001Inspur3.5"2TB7.2K Enterprise SATA6Gbps Hot Swap Hard Drive BHT0422TB SATA（企业级）SPT0STG35006Inspur3.5"3TB7.2K Enterprise SATA6Gbps Hot Swap Hard Drive BHT0703TB SATA（企业级）SPT0STG35005Inspur3.5"4TB7.2K Enterprise SATA6Gbps Hot Swap Hard Drive BHT0834TB SATA（企业级）SPT0STG35003Inspur3.5"6TB7.2K Enterprise SATA6Gbps Hot Swap Hard Drive BHT1076TB SATA（企业级）SPT0STG35002Inspur3.5"8TB7.2K Enterprise SATA6Gbps Hot Swap Hard Drive8TB SATA（企业级）2.5寸企业级SATA（含托架及包装）2.5寸企业级SATA（含托架及包装）SPT0STG25006Inspur2.5"500GB7.2K Enterprise SATA6Gbps Hot Swap Hard Drive BHT062500GB SATA 2.5"（企业级）SPT0STG25005Inspur2.5"1TB7.2K Enterprise SATA6Gbps Hot Swap Hard Drive BHT0611TB SATA 2.5"（企业级）SPT0STG25004Inspur2.5''2TB7.2K Enterprise SATA6Gbps Hot Swap HardDrive2TB SATA 2.5"（企业级）2.5寸SAS（含托架及包装）2.5寸SAS（含托架及包装）7,200RPM7,204RPMSPT0STG25S03Inspur2.5"1TB7.2K Enterprise SAS12Gbps Hot Swap Hard Drive BSA0531TB SAS硬盘2.5"SPT0STG25S05Inspur2.5"1TB7.2K Enterprise SAS6Gbps Hot Swap Hard Drive BSA0531TB SAS硬盘2.5"SPT0STG25S01Inspur2.5"2TB7.2K Enterprise SAS12Gbps Hot Swap Hard Drive2TB SAS硬盘2.5"10,000RPM10,004RPMSPT0STG25001Inspur2.5"1.2TB10K Enterprise SAS12Gbps Hot Swap Hard Drive BSA0841.2T热插拔SAS硬盘(1万转)2.5" SPT0STG25002Inspur2.5"1.2TB10K Enterprise SAS6Gbps Hot Swap Hard Drive BSA0841.2T热插拔SAS硬盘(1万转)2.5"SPT0STG25S02Inspur2.5"1.8TB10K Enterprise SAS12Gbps Hot Swap Hard Drive BSA1091.8T热插拔SAS硬盘(1万转)2.5"SPT0STG25S0E Inspur2.5"300GB10K Enterprise SAS12Gbps Hot Swap Hard Drive BSA023300G热插拔SAS硬盘(1万转)2.5"SPT0STG25S0G Inspur2.5"300GB10K Enterprise SAS6Gbps Hot Swap Hard Drive BSA023300G热插拔SAS硬盘(1万转)2.5"SPT0STG25S08Inspur2.5"600GB10K Enterprise SAS12Gbps Hot Swap Hard Drive BSA036600G热插拔SAS硬盘(1万转)2.5"SPT0STG25S09Inspur2.5"600GB10K Enterprise SAS6Gbps Hot Swap Hard Drive BSA036600G热插拔SAS硬盘(1万转)2.5"SPT0STG25S04Inspur2.5"900GB10K Enterprise SAS12Gbps Hot Swap Hard Drive BSA057900G热插拔SAS硬盘(1万转)2.5"SPT0STG25S06Inspur2.5"900GB10K Enterprise SAS6Gbps Hot Swap Hard Drive BSA057900G热插拔SAS硬盘(1万转)2.5"15,000RPM15,004RPMSPT0STG25S0D Inspur2.5"300GB15K Enterprise SAS12Gbps Hot Swap Hard Drive BSA059300G热插拔SAS硬盘(1万5千转)2.5"希捷SPT0STG25S0F Inspur2.5"300GB15K Enterprise SAS6Gbps Hot Swap Hard Drive BSA059300G热插拔SAS硬盘(1万5千转)2.5"希捷SPT0STG25S07Inspur2.5"600GB15K Enterprise SAS12Gbps Hot Swap Hard Drive BSA108600G热插拔SAS硬盘(1万5千转)2.5"日立SPT0STG25003Inspur2.5"600GB15K Enterprise SAS6Gbps Hot Swap Hard Drive600G热插拔SAS硬盘(1万5千转)2.5"日立3.5寸SAS（含托架及包装）3.5寸SAS（含托架及包装）SPT0STG35S09Inspur3.5"1TB7.2K Enterprise SAS6Gbps Hot Swap Hard Drive TYP0231TB SAS硬盘SPT0STG35S08Inspur3.5"2TB7.2K Enterprise SAS6Gbps Hot Swap Hard Drive BSA0762TB SAS硬盘SPT0STG35S05Inspur3.5"2TB7.2K Enterprose SAS12Gbps Hot Swap Hard Drive BSA0762TB SAS硬盘SPT0STG35S07Inspur3.5"3TB7.2K Enterprise SAS6Gbps Hot Swap Hard Drive TCP0493TB SAS硬盘SPT0STG35S04Inspur3.5"3TB7.2K Enterprose SAS12Gbps Hot Swap Hard Drive TCP0493TB SAS硬盘SPT0STG35S06Inspur3.5"4TB7.2K Enterprise SAS6Gbps Hot Swap Hard Drive BSA1064TB SAS硬盘SPT0STG35S03Inspur3.5"4TB7.2K Enterprose SAS12Gbps Hot Swap Hard Drive BSA1064TB SAS硬盘SPT0STG35S01Inspur3.5"6TB7.2K Enterprose SAS12Gbps Hot Swap Hard Drive6TB SAS硬盘3.5寸硬盘托架，2.5寸SAS硬盘7,200RPM7,204RPMSPT0STG25S0N Inspur2.5"1TB7.2K Enterprise SAS12Gbps Hot Swap HDD in3.5"Tray BSA0531TB SAS硬盘2.5"SPT0STG25S0P Inspur2.5"1TB7.2K Enterprise SAS6Gbps Hot Swap HDD in3.5"Tray BSA0531TB SAS硬盘2.5"SPT0STG25S0H Inspur2.5"2TB7.2K Enterprise SAS12Gbps Hot Swap HDD in3.5"Tray2TB SAS硬盘2.5"10,000RPM10,004RPMSPT0STG25S0K Inspur2.5"1.2TB10K Enterprise SAS12Gbps Hot Swap HDD in3.5"Tray BSA0841.2T热插拔SAS硬盘(1万转)2.5"SPT0STG25S0M Inspur2.5"1.2TB10K Enterprise SAS6Gbps Hot Swap HDD in3.5"Tray BSA0841.2T热插拔SAS硬盘(1万转)2.5"SPT0STG25S0J Inspur2.5"1.8TB10K Enterprise SAS12Gbps Hot Swap HDD in3.5"Tray BSA1091.8T热插拔SAS硬盘(1万转)2.5"SPT0STG25S11Inspur2.5"300GB10K Enterprise SAS12Gbps Hot Swap HDD in3.5"Tray BSA023300G热插拔SAS硬盘(1万转)2.5" SPT0STG25S13Inspur2.5"300GB10K Enterprise SAS6Gbps Hot Swap HDD in3.5"Tray BSA023300G热插拔SAS硬盘(1万转)2.5" SPT0STG25S0T Inspur2.5"600GB10K Enterprise SAS12Gbps Hot Swap HDD in3.5"Tray BSA036600G热插拔SAS硬盘(1万转)2.5"SPT0STG25S0V Inspur2.5"600GB10K Enterprise SAS6Gbps Hot Swap HDD in3.5"Tray BSA036600G热插拔SAS硬盘(1万转)2.5"SPT0STG25S0Q Inspur2.5"900GB10K Enterprise SAS12Gbps Hot Swap HDD in3.5"Tray BSA057900G热插拔SAS硬盘(1万转)2.5"SPT0STG25S0R Inspur2.5"900GB10K Enterprise SAS6Gbps Hot Swap HDD in3.5"Tray BSA057900G热插拔SAS硬盘(1万转)2.5"15,000RPM15,004RPMSPT0STG25S0Z Inspur2.5"300GB15K Enterprise SAS12Gbps Hot Swap HDD in3.5"Tray BSA059300G热插拔SAS硬盘(1万5千转)2.5"希捷SPT0STG25S12Inspur2.5"300GB15K Enterprise SAS6Gbps Hot Swap HDD in3.5"Tray BSA059300G热插拔SAS硬盘(1万5千转)2.5"希捷SPT0STG25S0S Inspur2.5"600GB15K Enterprise SAS12Gbps Hot Swap HDD in3.5"Tray BSA108600G热插拔SAS硬盘(1万5千转)2.5"日立SPT0STG25S0U Inspur2.5"600GB15K Enterprise SAS6Gbps Hot Swap HDD in3.5"Tray600G热插拔SAS硬盘(1万5千转)2.5"日立3.5寸云盘和归档盘（含托架及包装）3.5寸云盘和归档盘（含托架及包装）SPT0STG3500A Inspur3.5"4TB7.2K Cloud Storage SATA6Gbps Hot Swap Hard Drive4T云盘（7200转）V03ZVSPT0STG3500E Inspur3.5"4TB5.9K Cloud Storage SATA6Gbps Hot Swap Hard Drive4T云盘（5900转）_W0CCP0B0000060053.5寸硬盘托架，2.5寸企业级SATA3.5寸硬盘托架，2.5寸企业级SATASPT0STG25008Inspur2.5"2TB7.2K Enterprise SATA6Gbps Hot Swap Hard Drive in3.5"tray2TB SATA 2.5"（企业级）SPT0STG25009Inspur2.5"1TB7.2K Enterprise SATA6Gbps Hot Swap Hard Drive in3.5"tray1TB SATA 2.5"（企业级）SPT0STG2500A Inspur2.5"500GB7.2K Enterprise SATA6Gbps Hot Swap Hard Drive in3.5"tray500GB SATA 2.5"（企业级）PCIE SSD卡PCIE SSD卡BHD025400G MLC SSD PCIe接口BHD026600G MLC SSD PCIe接口BHD024800G MLC SSD PCIe接口BHD0231.2T MLC SSD PCIe接口BHD0272.4T MLC SSD PCIe接口其他硬盘及组件其他硬盘及组件BHE00264G SATA-DOM硬盘BHD02880G MLC SSD 2.5BHD029120G MLC SSD 2.5BHD004160G MLC SSD 2.5BHD030240G MLC SSD 2.5BHD010300G MLC SSD 2.5BHD016480G MLC SSD 2.5BHD009600G MLC SSD 2.5BHD019800G MLC SSD 2.5TYP004500GB SATA（桌面级）BPT0201T SATA（桌面级）BSA012300G热插拔SAS硬盘(1万5千转)RAID卡RAID卡SPT0POC00R06Inspur SAS3008iMR12Gbps PCIe Adapter BSS012INSPUR八通道高性能SAS3008卡IMR（可选Raid key)SPT0THR00K02Inspur RAID5Upgrate key for SAS3008iMR12Gbps PCIe Adapter BSS013INSPUR八通道高性能3008Raid KeySPT0POC00R02Inspur RAID1GB9271-8i6Gbps PCIe Adapter by Avago BRE028八通道SAS高性能RAID-9271（1G缓存)SPT0THR00D02Inspur iBBU09Battery Backup Unit Upgrade for RAID2208MR,9271-8i PCIe Adapter BDC020八通道SAS高性能RAID-9271电池SPT0THR00D05Inspur Supercapacitor Upgrade for RAID2208MR,9271-8i PCIe Adapter BDC022八通道SAS高性能RAID-9271缓存断电保护模块SPT0THR00K03Inspur RAID CacheCade Pro2.0Key for2208MR,3108MR,9271-8i,9361-8i BRE032RAID卡功能模块-CacheCade模块SPT0POC00R0G Inspur RAID2GB PM806012Gbps PCIe Adapter BDC027INSPUR八通道高性能SAS RAID卡RS0820P(2G缓存)SPT0THR00D01Inspur Supercapacitor for RAID PM8060(1GB,2GB)PCIe Adapter by Adaptec BRE038INSPUR八通道高性能SAS RS0810P缓存断电保护模块SPT0POC00R09Inspur RAID1GB9361-8i12Gbps PCIe Adapter by Avago BRE034八通道SAS高性能RAID-9361（1G缓存)SPT0THR00D03Inspur Supercapacitor Upgrade for RAID1GB9361-8i PCIe Adapter by LSI BDC026八通道SAS高性能RAID-9361（1G缓存)缓存断电保护模块SPT0POC00R08Inspur RAID2GB9361-8i12Gbps PCIe Adapter by Avago BRD036八通道SAS高性能RAID-9361（2G缓存)SPT0THR00D04Inspur Supercapacitor Upgrade for RAID9361-8i(2GB),3108MR(2GB,4GB)by LSI BDC025八通道SAS高性能RAID-9361（2G缓存)缓存断电保护模块SPT0POC00R07Inspur RAID4GB9364-8i12Gbps PCIe Adapter by Avago BRD037八通道SAS高性能LSI RAID-9364（4G缓存+缓存断电保护模块）SPT0POC00R0A Inspur RAID4GB3108MR12Gbps PCIe Adapter BRE040INSPUR八通道高性能SAS RAID卡RS0840L3(4G缓存)电源电源SPT0PSU00001Inspur CRPS800W Platinum Hot Swap Power SupplySPT0PSU00002Inspur CRPS1200W Platinum Hot Swap Power SupplySPT0PSU00003Inspur CRPS550W Platinum Hot Swap Power SupplySPT0PSU00004Inspur CRPS800W Titanium Hot Swap Power SupplySPT0PSU00005Inspur CRPS800W-48VDC Hot Swap Power SupplySPT0PSU00006Inspur CRPS800W336VDC Hot Swap Power SupplyBDY096300W电源适用于NP3020M4BDY097550W白金电源适用于NP3020M4光纤通道连接配件光纤通道连接配件SPT0POC00B01Inspur LPe1250Single Port8Gb Fibre Channel HBA by Emulex TAF019光纤通道HBA卡,FC8Gb,单端口,LC接口SPT0POC00B02Inspur LPe12002Dual Port8Gb Fibre Channel HBA by Emulex TAF021光纤通道HBA卡,FC8Gb,双端口,LC接口SPT0POC00B05Inspur QLE2560Single Port8Gb Fibre Channel HBA by Qlogic TAF019光纤通道HBA卡,FC8Gb,单端口,LC接口SPT0POC00B06Inspur QLE2562Dual Port8Gb Fibre Channel HBA by Qlogic TAF021光纤通道HBA卡,FC8Gb,双端口,LC接口SPT0POC00B03Inspur LPe16000B Single Port16Gb Fibre Channel HBA by Emulex TAF028光纤通道HBA卡,FC16Gb,单端口,LC接口SPT0POC00B07Inspur QLE2670Single Port16Gb Fibre Channel HBA by Qlogic TAF028光纤通道HBA卡,FC16Gb,单端口,LC接口SPT0POC00B04Inspur LPe16002B Dual Port16Gb Fibre Channel Adapter by Emulex TAF029光纤通道HBA卡,FC16Gb,双端口,LC接口转接卡转接卡BKZ013PCI-E转接卡套件（NF8460M3）PCI-E转接卡套件（NF8460M4）网卡及远程管理卡网卡及远程管理卡SPT0POC00W01Inspur I350PCIe1Gb2Port Base-T Ethernet Adapter BNT004双口千兆网卡（RJ45接口）SPT0POC00W02Inspur I350PCIe1Gb4Port Base-T Ethernet Adapter BNT010四口千兆网卡（RJ45接口）SPT0POC00W06Inspur I350PCIe1Gb4Port SPF Ethernet Adapter BNT042四口千兆网卡（光纤接口）SPT0POC00W07Inspur82599ES PCIe10Gb1Port with Multi-mode SFP+module Ethernet Adapter单口万兆网卡（光纤接口含多模模块）SPT0POC00W09Inspur MCX312B-XCCT PCIe10Gb2Port SFP+Ethernet Adapter BNT009双口万兆网卡（光纤接口）SPT0POC00W08Inspur82599ES PCIe10Gb2Port with Multi-mode SFP+module Ethernet Adapter双口万兆网卡（光纤接口含多模模块）SPT0POC00W0J Inspur X710PCIe x8+x110Gb2Port SFP+Ethernet Daughter Card出厂前升级INSPUR双口万兆FLOM网卡（光纤接口），不含光模块SPT0POC00W0H Inspur82599ES PCIe x8+x110Gb1Port SFP+Ethernet Adapter BNT034INSPUR单口万兆网卡（光纤接口），不含光模块SPT0POC00W0K Inspur CX3PCIe x8+110Gb1Port SFP+Ethernet Adapter BNT034INSPUR单口万兆网卡（光纤接口），不含光模块SPT0POC00W0G Inspur82599ES PCIe x8+x110Gb2Port SFP+Ethernet Adapter BNT035INSPUR双口万兆网卡（光纤接口），不含光模块SPT0POC00W0L Inspur CX3PCIe x8+110Gb2Port SFP+Ethernet AdapterSPT0THR00S01Inspur1Gb Single-Mode SPF+Optical Module INSPUR千兆网卡光模块（单模，搭配INSPUR万兆网卡使用）SPT0THR00S02Inspur1Gb Multi-Mode SFP+Optical Module INSPUR千兆网卡光模块（多模，搭配INSPUR万兆网卡使用）SPT0THR00S03Inspur10Gb Single-Mode SFP+Optical Module BNT036INSPUR万兆网卡光模块（单模，搭配INSPUR万兆网卡使用）SPT0THR00S04Inspur10Gb Multi-Mode SFP+Optical Module BNT037INSPUR万兆网卡光模块（多模，搭配INSPUR万兆网卡使用）SPT0POC00W0A Inspur T580-SO-CR PCIe40Gb2Port QSFP+Ethernet Adapter BNT039双口40GbE网卡光纤接口，不含光模块，需搭配40G网卡线缆使用SPT0POC00W03Inspur X540PCIe10Gb2Port Base-T Ethernet Adapter BNT030双口万兆网卡（RJ45接口）SPT0POC00W04Inspur I350PCIe x8+11Gb4Port Base-T Ethernet Adapter出厂前升级INSPUR四口千兆网卡（RJ45接口）SPT0POC00W05Inspur X540PCIe x8+110Gb2Port Base-T Ethernet Adapter INSPUR双口万兆网卡（RJ45接口）BNT002单口千兆网卡（光纤接口）BNT005双口千兆网卡（光纤接口）BNT008单口万兆网卡（光纤接口）BNT040双口40GbE CNA网卡光纤接口，不含光模块，需搭配40G网卡线缆使用BNT04140G网卡线缆，15米Infiniband card Infiniband cardSPT0POC00C01Inspur MCX353A-FCBT56Gb1Port with QSFP Module InfiniBand Adapter TAF027HCA卡(单口IB卡56GB)SPT0POC00C02Inspur MCX353A-FCBT56Gb2Port with QSFP Module InfiniBand Adapter HCA卡(双口IB卡56GB)软驱、光驱、刻录机软驱、光驱、刻录机BHU001U盘软驱MGQ002标准DVDBCD006DVD刻录机BCD017USB DVD刻录机BCD026SLIM DVD刻录机显卡显卡BXK039显卡K420（显存1G）BXK040显卡K620（显存2G）BXK041显卡K2200（显存4G）显示器显示器BOV01419.5寸液晶显示器BOV00921.5寸液晶显示器BOV01523.6寸液晶显示器RACK机柜及组件RACK机柜及组件BOG022浪潮42U标准服务器机柜（无PDU）/2000mm×1100mm×600mm（H×D×W）BPK0396口PDU国标万用插口/10ABPK03821口PDU国标万用插口/32ABTP00140公斤机柜托盘BTP002100公斤机柜托盘BOK001键盘B0M001鼠标BOQ008四合一切换器17寸液晶8口/USBBOQ009四合一切换器17寸液晶16口/USBBOQ0018口切换器BOQ00516口切换器其他其他BPT002配件，背板_INSPUR_SAS_2.5X8BPT017硬盘模组_2.5×8BPT003配件，背板_INSPUR_SAS12G_4X3.5BPT004配件，背板_INSPUR_SAS12G_8X2.5BPT008配件，SAS线BPT010配件，风扇BPT011配件，硬盘托架_2.5寸BPT012配件，硬盘托架_3.5寸BPT013配件，包装箱BPT014配件，电源线BPT015配件，服务器用户手册及睿捷服务器套件光盘BPL001NF5270M42U前面板V08WY0208000B014SPT0BKD00001Inspur Milestone42U3.5"x4Drive Backplane Kit SPT0BKD00002Inspur Milestone42U Rear2.5"x2Drive Backplane Kit SPT0BKD00003Inspur Milestone42U2.5"x8Drive Backplane Kit。

3100Y30I17999CJ产品有限公司3100型号确定目的接线人员，3桡，24VAC电压额定值，

3100Y30I17999CJProducts Unlimited 3100, Definite Purpose Contactors, Pole Configuration 3, 24VACCoil Voltage Rating, 60A Contact Current Rating, PanelRelays, Contactors & Switches>Contactors>Definite Purpose Contactors>DP CONTACTORS, 3 POLE, 20-40FLAContact Arrangement: 3 Form X, 3PST-NO-DMMounting Type:PanelContact Current Rating:60 ACoil Voltage Rating:24 VACPole Configuration:3All DP CONTACTORS, 3 POLE, 20-40FLA (43)FeaturesProduct Type FeaturesMolded YesProduct Category Electromechanical RelaysProduct Type ContactorArc Cover WithProduct Classification Relays - ContactorsModel93Contactor Type Definite PurposeTerminal Configuration Box Lug, Quick ConnectConfiguration FeaturesAuxiliary Switch Contact Arrangement WithoutElectrical CharacteristicsActuating System ACCoil Voltage (Max)24 VACCoil Voltage Rating24 VACCoil Resistance 1.77 ΩContact Switching Voltage (Max)600 VACContact Features3100Y30I17999CJ ACTIVEProducts UnlimitedTE Internal #:8-1611019-5Products Unlimited 3100, Definite Purpose Contactors, PoleConfiguration 3, 24VAC Coil Voltage Rating, 60A Contact CurrentRating, PanelView on >Products Unlimited 3100|Contact FeaturesContact Base Material Silver Cadmium OxidePole Configuration3Contact Current Rating60 AContact Arrangement 3 Form X, 3PST-NO-DMTermination FeaturesCoil Termination6-32 Screw, Quick ConnectMechanical AttachmentMounting Plate WithMounting Type PanelDimensionsWire Size 2.08 – 33.6 mm²Industry StandardsUL Flammability Rating UL 94V-0Agency Approval CSA Certified, SEMKO Certified, ULRecognizedPackaging FeaturesPackaging Method IndividualOtherTorque50 in-lbsProduct ComplianceFor compliance documentation, visit the product page on >EU RoHS Directive 2011/65/EU Compliant with ExemptionsEU ELV Directive 2000/53/EC Not CompliantChina RoHS 2 Directive MIIT Order No 32, 2016Restricted Materials Above ThresholdEU REACH Regulation (EC) No. 1907/2006Current ECHA Candidate List: JUN 2020(209)Candidate List Declared Against: JUN 2018(191)Cadmium oxide (.12%)Article Safe Usage Statements:Use personal protective equipment as required. Do not eat, drink or smoke whenusing this product. Recycle if possible and dispose of the article by following allapplicable governmental regulations relevant to your geographic location. Halogen Content Not Yet Reviewed for halogen content Solder Process Capability Not applicable for solder process capabilityProduct Compliance DisclaimerThis information is provided based on reasonable inquiry of our suppliers and represents our current actual knowledge based on the information they provided. This information is subject to change. The part numbers that TE has identified as EU RoHS compliant have a maximum concentration of 0.1% by weight in homogenous materials for lead, hexavalent chromium, mercury, PBB, PBDE, DBP, BBP, DEHP, DIBP, and 0.01% for cadmium, or qualify for an exemption to these limits as defined in the Annexes of Directive 2011/65/EU (RoHS2). Finished electrical and electronic equipment products will be CE marked as required by Directive 2011/65/EU. Components may not be CE marked.Additionally, the part numbers that TE has identified as EU ELV compliant have a maximum concentration of 0.1% by weight in homogenous materials for lead, hexavalent chromium, and mercury, and 0.01% for cadmium, or qualify for an exemption to these limits as defined in the Annexes of Directive 2000/53/EC (ELV). Regarding the REACH Regulations, TE’s information on SVHC in articles for this part number is still based on the European Chemical Agency (ECHA) ‘Guidance on requirements forsubstances in articles’(Version: 2, April 2011), applying the 0.1% weight on weight concentration threshold at the finished product level. TE is aware of the European Court of Justice ruling of September 10th, 2015 also known as O5A (Once An Article Always An Article) stating that, in case of ‘complex object’, the threshold for a SVHC must be applied to both the product as a whole and simultaneously to each of the articles forming part of its composition. TE has evaluated this ruling based on the new ECHA “Guidance on requirements for substances in articles” (June 2017, version 4.0) and will be updating its statements accordingly.TE Model / Part #ZPF000000000036945983-6SE 14-04 SN-LTE Model / Part #1058120-13284 3201 10TE Model / Part #822283-000204K012-3-0TE Model / Part #2-2176370-1RQ 0603 698R 0.1% 10PPM 5K RLDefinite Purpose Contactors(80)TE Model / Part #1611349-134300-332=AUXILIARY SWITCH 1N.TE Model / Part #175022-1PL EX MKII 250 REC 18-14AWG PTBRCompatible PartsAlso in the Series Products Unlimited 3100Customers Also BoughtTE Model / Part #3-1879669-7H4 2K74 0.1% 25PPMTE Model / Part #1-1879336-4CPF 0603 316R 1% 50PPM 1K RLTE Model / Part #YACT20MJ19SNC00100SQUARE FLANGE RECEPTACLETE Model / Part #YACT20MJ19SAC00100SQUARE FLANGE RECEPTACLETE Model / Part #ZPF000000000001199097-0014-16TE Model / Part #ZPF000000000001233097-0165-12DocumentsCAD Files3D PDF3DCustomer View ModelENG_CVM_CVM_8-1611019-5_O.2d_dxf.zipEnglishCustomer View ModelENG_CVM_CVM_8-1611019-5_O.3d_igs.zipEnglishCustomer View ModelENG_CVM_CVM_8-1611019-5_O.3d_stp.zipEnglishBy downloading the CAD file I accept and agree to the of use.Terms and Conditions Datasheets & Catalog PagesIndustrial Relays Quick Reference GuideEnglishModel 93 - 3100 Definite Purpose Contactor 3-pole, 50-60 FLA AC CoilEnglish。

泰科V23990-P540全系列

flow PIM 01200V / 15AƔ Tyco clip-in housingƔ Trench Fieldstop IGBT's for low saturation losses Ɣ Optional w/o BRCƔ Industrial DrivesƔ Embedded GenerationƔ V23990-P540-A-PM Ɣ V23990-P540-C-PMParameterSymbolValueUnitInput Rectifier BridgeRepetitive peak reverse voltage V RRM 1600V Th =80°C 30T c =80°C 40T j =25°C 200T j =25°C 200Th =80°C 37T c =80°C54Maximum junction temperatureT j max150°CTransistor InverterV CE 1200V T h =80°C 16T c =80°C20Repetitive peak collector current I cpuls tp limited by T j max 32A T h =80°C 39T c =80°C 58,6Gate-emitter peak voltageV GE ±20V Tj 150°C VCC=900V VGE=15V Maximum junction temperature T j max150°C* It is recommended to not exceed 1000 short circuit situations in the lifetime of the module and to allow at least 1s between short circuits10TypesConditionDC currentI FSMI FAV T j =T j maxFeaturesflow 0 housingTarget ApplicationsSchematicW I 2t-valuePower dissipation per Diode Collector-emitter break down voltage I C T j =T j max T j =T j maxt p =10msP tot I 2t A A A2s W Maximum RatingsForward current per diode Surge forward current P s t SC DC collector currentPower dissipation per IGBT SC withstand time*P tot AParameterSymbolValueUnitConditionMaximum RatingsDiode InverterT h =80°C 16T c =80°C20Repetitive peak forward current I FRM tp limited by T j max 31A T h =80°C 27T c =80°C 40,3Maximum junction temperatureT j max150°CTransistor BRCCollector-emitter break down voltage V CE 1200V T h=80°C 11T c =80°C 14Repetitive peak collector current I cpuls tp limited by T j max T h =80°C 22A T h =80°C 27T c =80°C41Gate-emitter peak voltageV GE ±20VTj 150°C VCE=900V VGE=15V Maximum junction temperature T j max 150°C* It is recommended to not exceed 1000 short circuit situations in the lifetime of the module and to allow at least 1s between short circuitsDiode BRCT h =80°C 12T c =80°C 16Repetitive peak forward current I FRM tp limited by T j max T h =80°C 24A T h =80°C 23T c =80°C35Maximum junction temperatureT j max150°CThermal propertiesStorage temperature T stg -40…+125°C Operation temperatureT op-40…+125°CInsulation propertiesInsulation voltage V ist=1min4000Vdc Creepage distance min 12,7mm min 12,7mmT j =T j max I F DC forward currentClearanceP tot T j =T j maxT j =T j max DC forward currentI F Power dissipation per Diode SC withstand time*t SCW W A A 10P sPower dissipation per IGBT DC collector currentI C T j =T j max T j =T j maxP tot W A T j =T j maxPower dissipation per Diode P totParameterSymbolUnitV GE (V) or V GS (V)V r (V) or V CE (V) or V DS (V)I C (A) or I F (A) or I D (A)T(C°)MinTypMaxInput Rectifier BridgeTj=25°C 1,221,45Tj=125°C 1,21Tj=25°C 0,91Tj=125°C 0,81Tj=25°C 0,01Tj=125°C 0,013Tj=25°C 0,01Tj=150°C4Thermal resistance chip to heatsink per chip R thJH 1,95K/W Thermal resistance chip to case per chipR thJC1,287K/WTransistor InverterTj=25°C 55,86,5Tj=125°C 15Tj=25°C 1,892,35Tj=125°C 2,19Tj=25°C 0,1Tj=125°C 2Tj=25°C 200Tj=125°CIntegrated Gate resistor R gint -Ohm Tj=25°C Tj=125°C 32Tj=25°C Tj=125°C 20Tj=25°C Tj=125°C 451Tj=25°C Tj=125°C 276Tj=25°C Tj=125°C 1,61Tj=25°C Tj=125°C 2,19Tj=25°C 1,1Tj=125°C Tj=25°C 0,058Tj=125°C Tj=25°C 0,048Tj=125°C 96015Tj=25°C 85Tj=125°CThermal resistance chip to heatsink per chip R thJH1,67K/W Thermal resistance chip to case per chipR thJC K/WDiode InverterTj=25°C 2,323Tj=125°C 1,78Tj=25°C Tj=125°C 31Tj=25°C Tj=125°C 355Tj=25°C Tj=125°C 3,5Tj=25°C Tj=125°C1,32Thermal resistance chip to heatsink per chip R thJH 2,64K/W Thermal resistance chip to case per chipR thJC1,7424K/WThermal greasethickness 50um Ȝ = 0,61 W/mKThermal grease thickness 50um Ȝ= 0,61 W/mKV A ns OhmmA 1500Reverse recovery energyV F I RM mWs P C Thermal grease thickness 50um Ȝ = 0,61 W/mKReverse leakage currentForward voltageThreshold voltage (for power loss calc. only)Slope resistance (for power loss calc. only)V F V to r t ValueConditionsV V Reverse recovery charge C rss Q Gate Turn-on energy loss per pulse Turn-off energy loss per pulse Q rr Diode forward voltage Peak reverse recovery current Reverse recovery time t rr Rgoff=20Ohmt d(on)000nF nF f=1MHzErec nC 2525251515V mA nA ns ns ns ns mWs nF V GE(th)V CE(sat)I CES VCE=VGE03030301200Gate emitter threshold voltage Collector-emitter saturation voltage Collector-emitter cut-off Gate-emitter leakage current I GES C ies C oss t r E off t d(off)E on 0I r 20t f Gate chargeTurn-on delay time Rise timeTurn-off delay time V mWs 150,0006Reverse transfer capacitance Rgon=40Ohm Input capacitance Output capacitanceFall timeParameterSymbolUnitV GE (V) or V GS (V)V r (V) or V CE (V) or V DS (V)I C (A) or I F (A) or I D (A)T(C°)MinTypMaxValueConditionsTransistor BRCTj=25°C 55,86,5Tj=125°C Tj=25°C 1,872,7Tj=125°C 2,19Tj=25°C 0,05Tj=125°C 2Tj=25°C 200Tj=125°CTj=25°C Tj=125°C 34Tj=25°C Tj=125°C 20Tj=25°C Tj=125°C 442Tj=25°C Tj=125°C 284Tj=25°C Tj=125°C 0,917Tj=25°C Tj=125°C 1,47#BEZUG!Tj=25°C #BEZUG!Tj=125°C #BEZUG!Tj=25°C 0,037Tj=125°C Tj=25°C 0,029Tj=125°C f=1MHzTj=25°C 53Tj=125°CThermal resistance chip to heatsink per chip R thJH 2,56K/W Thermal resistance chip to case per chipR thJC1,6896K/WDiode BRCTj=25°C 1,82,5Tj=125°C 1,79Tj=25°C 250Tj=125°C 700Tj=25°C Tj=125°C 423Tj=25°C Tj=125°C 2,1Tj=25°C Tj=125°C0,88Thermal resistance chip to heatsink per chip R thJH 3,05K/W Thermal resistance chip to case per chipR thJC2,013K/WNTC ThermistorRated resistance R 25Tj=25°C 17,52229kOhm Deviation of R100D R/R R100=1503ȍTc=100°C 2,9%/K Power dissipation given Epcos-Type P Tj=25°C 210mW B-valueB (25/100)Tol. ±3%Tj=25°C4000KRgon=80Ohm 15600Rgon=80Ohm 15600Thermal grease thickness 50um Ȝ = 0,61 W/mKRgon=80Ohm 15600Thermal grease thickness 50um Ȝ = 0,61 W/mK15Rgoff=40Ohm 0,0003#BEZUG!Rgon=80OhmP Ws P C V P A ns Gate emitter threshold voltage VCE=VGECollector-emitter saturation voltage V GE(th)V CE(sat)15Collector-emitter cut-off Gate-emitter leakage current Turn-on delay time Integrated Gate resistor Turn-off energy loss per pulse Input capacitance Output capacitanceRise timeTurn-off delay time Fall timeTurn-on energy loss per pulse I CES I GES C ies E on E off R gint t d(on)t r t d(off)t f Reverse transfer capacitance Gate chargeC oss C rss Q Gate #BEZUG!1200060002010ns ns 10Ohm V V mA nA nF nF nF ns ns P Ws P Ws nC Diode forward voltage Reverse leakage current 10251200Reverse recovered charge Reverse recovery energyV F I r t rr Q rr E rec Reverse recovery timePackage Outline and PinoutOutlinePinoutPRODUCT STATUS DEFINITIONS Formative or In DesignFirst ProductionFull ProductionDISCLAIMERLIFE SUPPORT POLICYAs used herein:Preliminary This datasheet contains preliminary data, andsupplementary data may be published at a later date. Tyco Electronics reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for teFinal This datasheet contains final specifications. TycoElectronics reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for technically trained staff.Target Product StatusDatasheet StatusDefinitionThis datasheet contains the design specifications for product development. Specifications may change in any manner without notice. The data contained is exclusively intended for technically trained staff. Tyco Electronics reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Tyco Electronics does not assume any liability arising out of the application or use of any product or circuit deTyco Electronics products are not authorised for use as critical components in life support devices or systems without the express written approval of Tyco Electronics.1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in la2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.V23990-P540-A-PMfinal datasheetOutput inverterFigure 1.Typical output characteristicsFigure 2.Typical output characteristicsOutput inverter IGBTOutput inverter IGBTIc= f(V CE )parameter: tp = 250 ms Tj = 25 °Cparameter: tp = 250 ms Tj = 125 °CV GE parameter:from:7V to 17VV GE parameter:from:7V to 17Vin 1V steps in 1V stepsFigure 3.Typical transfer characteristicsFigure 4.Typical diode forward current asOutput inverter IGBTa function of forward voltageF F parameter: tp = 250 ms V CE = 10Vparameter: tp = 250 msFigure 5.Typical switching energy losses Figure 6.Typical switching energy losses as a function of collector current as a function of gate resistor Output inverter IGBTOutput inverter IGBTinductive load, Tj = 125 °CV CE =600V V CE =600V V GE =15VV GE =15V R G on = 2*R Goff =40W Ic =15AFigure 7.Typical switching times as aFigure 8.Typical switching times as a function of collector current function of gate resistor Output inverter IGBTOutput inverter IGBTt = f (Ic)t = f (R G )inductive load, Tj = 125 °Cinductive load, Tj = 125 °CV CE =600V V CE =600V V GE =15VV GE =15V RG on = 2*R Goff =40W Ic =15AFigure 9.Typical reverse recovery time as a Figure 10.Typical reverse recovery current as afunction of IGBT turn on gate resistor function of IGBT turn on gate resistor Output inverter FRED diodeOutput inverter FRED diodet rr = f (Rgon)I RRM = f (Rgon)Tj =125°C Tj =125°C V R =600V V R =600V I F =15A I F =15AFigure 11.Typical reverse recovery charge as aFigure 12.Typical rate of fall of forwardfunction of IGBT turn on gate resistor and reverse recovery current as a Output inverter FRED diodefunction of IGBT turn on gate resistor Q rr = f (Rgon)Output inverter FRED diode dI0/dt,dIrec/dt = f (Rgon)Tj =125°C Tj =125°C V R =600V V R =600V I F =15A I F =15AV23990-P540-A-PMfinal datasheetOutput inverterFigure 13.IGBT transient thermal impedanceFigure 14.FRED transient thermal impedanceas a function of pulse widthas a function of pulse widthZ th JH = f(tp)Z th JH = f(tp)Parameter: D = tp / T RthJH=2,64K/WIGBT thermal model values FRED thermal model values R (C/W)Tau (s)R (C/W)Tau (s)0,035,5E+010,045,2E+010,092,7E+000,161,8E+000,324,6E-010,742,4E-010,821,4E-011,176,3E-020,342,8E-020,415,8E-030,125,5E-030,147,8E-040,106,2E-04V23990-P540-A-PMfinal datasheetOutput inverterFigure 15.Power dissipation as aFigure 16.Collector current as afunction of heatsink temperature function of heatsink temperature Output inverter IGBTOutput inverter IGBTP tot = f (Th)I c = f (Th)V GE =15VFigure 17.Power dissipation as aFigure 18.Forward current as afunction of heatsink temperaturefunction of heatsink temperature Output inverter FREDOutput inverter FREDP tot = f (Th)I F = f (Th)parameter: Tj = 150°C parameter: Tj = 150°CV23990-P540-A-PMfinal datasheetBrakeFigure 19.Typical output characteristicsFigure 20.Typical output characteristicsBrake IGBTBrake IGBTIc= f(V CE )Ic= f(V CE )parameter: tp = 250 ms Tj = 25 °Cparameter: tp = 250 msTj = 125 °CV GE parameter:from:7V to 17VV GE parameter:from:7V to 17Vin 1V stepsin 1V stepsFigure 21.Typical transfer characteristicsFigure 22.Typical diode forward current asBrake IGBTa function of forward voltageIc= f(V GE )Brake FREDI F =f(V F )parameter: tp = 250 ms V CE = 10 Vparameter: tp = 250 msV23990-P540-A-PMfinal datasheetBrakeFigure 23.Typical switching energy lossesFigure 24.Typical switching energy lossesas a function of collector current as a function of gate resistor Brake IGBTBrake IGBTE = f (Ic)E = f (R G )inductive load, Tj = 125 °CV CE =600V V CE =600V V GE =15VV GE =15V R G on = 2*R Goff =80W Ic =10AFigure 25.Typical switching times as aFigure 26.Typical switching times as afunction of collector currentfunction of gate resistor Brake IGBTBrake IGBTt = f (Ic)t = f (R G)inductive load, Tj = 125 °Cinductive load, Tj = 125 °CV CE =600V V CE =600V V GE =15VV GE =15V R G on = 2*R Goff =80W Ic =10AFigure 27.IGBT transient thermal impedanceFigure 28.FRED transient thermal impedanceas a function of pulse widthas a function of pulse widthZ th JH = f(tp)Z th JH = f(tp)Parameter: D = tp / T RthJH=3,05K/WFigure 29.Power dissipation as aFigure 30.Collector current as afunction of heatsink temperature function of heatsink temperature Brake IGBTBrake IGBTP tot = f (Th)I c = f (Th)parameter: Tj = 150°Cparameter: Tj = 150°CV GE =15VFigure 32.Forward current as afunction of heatsink temperature Brake FREDI F = f (Th)parameter: Tj = 150°C parameter: Tj = 150°CV23990-P540-A-PMfinal datasheetInput rectifier bridgeFigure 33.Typical diode forward current asFigure 34.Diode transient thermal impedancea function of forward voltageas a function of pulse widthRectifier diodeI F =f(V F )Z th JH = f(tp)parameter: tp = 250 ms Parameter: D = tp / T RthJH=1,95K/WFigure 35.Power dissipation as aFigure 36.Forward current as afunction of heatsink temperature function of heatsink temperature Rectifier diodeRectifier diodeP tot = f (Th)I F = f (Th)parameter: Tj = 150°C parameter: Tj = 150°CV23990-P540-A-PMfinal datasheetThermistorFigure 37.Typical NTC characteristicas afunction of temperatureR T= f (T)General conditions:3 phase SPWM,Vgeon=15V Vgeoff=0V Rgon=40ohms Rgoff=20ohms Figure 1.Typical avarage static loss Figure 2.Typical avarage static loss as a function of output current as a function of output currentModulation index * cosfi Modulation index * cosfiparameter Mi*cosfi from-1,00to1,00parameter Mi*cosfi from-1,00to1,00in0,20steps in0,20stepsFigure 3.Typical avarage switching loss Figure 4.Typical avarage switching loss as a function of output current as a function of output currentFRED Ploss=f(Iout)DC link=600V DC link=600VSwitching freq.fsw from2kHz to16kHz Switching freq.fsw from2kHz to16kHz parameter in* 2steps parameter in* 2stepsGeneral conditions:3 phase SPWM,Vgeon=15V Vgeoff=0V Rgon=40ohms Rgoff=20ohms Figure 5.Typical available 50Hz output current Figure 6.Typical available 50Hz output current as a function of Mi*cosfi as a function of switching frequencyPhase Iout=f(Mi*cosfi)Phase Iout=f(fsw)DC link=600V DC link=600Vfsw=4kHz Mi*cosfi=0,8Heatsink temp.Th from60°C to100°C Heatsink temp.Th from60°C to100°C parameter in5°C steps parameter in5°C stepsFigure 7.Typical available 50Hz output current Figure 8.Typical available 0Hz output current as a function of Mi*cosfi and fsw as a function of switching frequencyPhase Iout=f(fsw,Mi*cosfi)Phase Ioutpeak=f(fsw)DC link=600V DC link=600VTh=80°C Heatsink temp.Th from60°C to100°Cparameter in5°C stepsGeneral conditions:3 phase SPWM,Vgeon=15VVgeoff=0VRgon=40ohmsRgoff=20ohmsFigure 9.Typical available electric Figure 10.Typical efficiencypeak output power as aas a function of output powerThfunction of heatsink temperatureInverterPout=f(Th)Inverterefficiency=f(Pout)Conditions:Tj=125C Conditions:Tj=125C DC link=600VDC link=600VModulation index Mi=1Modulation index Mi=1cosfi=0,80cosfi=0,80Switching freq.fsw from 2kHz to 16kHzSwitching freq.fsw from 2kHz to 16kHzparameter in* 2stepsparameter in* 2stepsmConditions:Tj=125C DC link=600V Modulation index Mi=1cosfi=0,8Switching freq.fsw from 1kHz to 16kHzparameter in* 2steps Heatsink temperature=80°C Motor efficiency=0,85。

V23990-P540-A中文资料

Maximum Ratings / Höchstzulässige WerteParameter Condition Symbol Datasheet values Unitmax.Input Rectifier BridgeGleichrichterRepetitive peak reverse voltage V RRM1600V Periodische Rückw. SpitzensperrspannungForward current per diode DC current Th =80°C;IFAV30ADauergrenzstrom Tc=80°C40-limited by wiresSurge forward current t p=10ms T j=25°C I FSM200A Stoßstrom GrenzwertI2t-value tp=10ms T j=25°C I2t200A2s GrenzlastintegralPower dissipation per Diode T j=150°C T h=80°C P tot37W Verlustleistung pro Diode T c=80°C54Transistor InverterTransistor WechselrichterCollector-emitter break down voltage V CE1200V Kollektor-Emitter-SperrspannungDC collector current T j=150°C T h=80°C,I C16A Kollektor-Dauergleichstrom T c=80°C20-limited by wires Repetitive peak collector current t p=1ms T h=80°C I cpuls32A Periodischer KollektorspitzenstromPower dissipation per IGBT T j=150°C T h=80°C P tot39W Verlustleistung pro IGBT T c=80°C59Gate-emitter peak voltage V GE±20V Gate-Emitter-SpitzenspannungSC withstand time Tj≤150°C V GE=15V t SC10us Kurzschlußverhalten V CE=V CEBRDiode InverterDiode WechselrichterDC forward current T j=150°C T h=80°C,I F16A Dauergleichstrom T c=80°C20-limited by wires Repetitive peak forward current t p=1ms T h=80°C I FRM31A Periodischer SpitzenstromPower dissipation per Diode T j=150°C T h=80°C P tot27W Verlustleistung pro Diode T c=80°C40Maximum Ratings / Höchstzulässige WerteParameter Condition Symbol Datasheet values Unitmax.Transistor BRCTransistor WechselrichterCollector-emitter break down voltage V CE1200V Kollektor-Emitter-SperrspannungDC collector current T j=150°C T h=80°C I C11A Kollektor-Dauergleichstrom T c=80°C14Repetitive peak collector current t p=1ms T h=80°C I cpuls22A Periodischer KollektorspitzenstromPower dissipation per IGBT T j=150°C T h=80°C P tot27W Verlustleistung pro IGBT T c=80°C41Gate-emitter peak voltage V GE±20V Gate-Emitter-SpitzenspannungSC withstand time Tj≤150°C VGE=15V t SC10us Kurzschlußverhalten VCE=600/1200 VDiode BRCDiode BRCDC forward current T j=150°C T h=80°C I F12A Dauergleichstrom T c=80°C16Repetitive peak forward current t p=1ms T h=80°C I FRM24A Periodischer SpitzenstromPower dissipation per Diode T j=150°C T h=80°C P tot23W Verlustleistung pro Diode T c=80°C35Thermal propertiesThermische Eigenschaftenmax. Chip temperature T150°Cjmaxmax. ChiptemperaturStorage temperature T-40…+125°CstgLagertemperatur-40…+125°C Operation temperature TopBetriebstemperaturInsulation propertiesModulisolation4000Vdc Insulation voltage t=1min VisIsolationsspannungCreepage distance min 12,7mm KriechstreckeClearance min 12,7mm LuftstreckeT(C°)Other conditions VGE(V)VCE(V)IC(A) IF(A)(Rgon-Rgoff)VGS(V)VDS(V)Id(A)Min Typ MaxInput Rectifier BridgeGleichrichterForward voltage V F Tj=25°C301,221,45V Durchlaßpannung Tj=125°C1,21Threshold voltage (for power loss calc. only)V to Tj=25°C300,91V Schleusenspannung Tj=125°C0,81Slope resistance (for power loss calc. only)r t Tj=25°C0,01Ohm Ersatzwiderstand Tj=125°C300,013Reverse current I r Tj=25°C15000,01mA Sperrstrom Tj=150°C4Thermal resistance chip to heatsink per chip RthJH Thermal greasethickness≤50um 1,95K/WWärmewiderstand Chip-Kühlkörper pro Chip WarmeleitpasteDicke≤50umλ = 0,61 W/mK1,29Transistor Inverter, inductive loadTransistor WechselrichterGate emitter threshold voltage V GE(th)Tj=25°C VCE=VGE0,000655,86,5V Gate-Schwellenspannung Tj=125°CCollector-emitter saturation voltage V CE(sat)Tj=25°C15151,892,35V Kollektor-Emitter Sättigungsspannung Tj=125°C2,19Collector-emitter cut-off I CES Tj=25°C012000,1mA Kollektor-Emitter Reststrom Tj=125°C2Gate-emitter leakage current I GES Tj=25°C200200nA Gate-Emitter Reststrom Tj=125°CIntegrated Gate resistor R gint -Ohm Integrirter Gate WiderstandTurn-on delay time t d(on)Tj=25°C Rgon=40Ohm1560015ns Einschaltverzögerungszeit Tj=125°C Rgoff=20Ohm32Rise time t r Tj=25°C Rgon=40Ohm1560015ns Anstiegszeit Tj=125°C Rgoff=20Ohm20Turn-off delay time t d(off)Tj=25°C Rgon=40Ohm1560015ns Abschaltverzögerungszeit Tj=125°C Rgoff=20Ohm451Fall time t f Tj=25°C Rgon=40Ohm1560015ns Fallzeit Tj=125°C Rgoff=20Ohm276Turn-on energy loss per pulse E on Tj=25°C Rgon=40Ohm1560015mWs Einschaltverlustenergie pro Puls Tj=125°C Rgoff=20Ohm1,61Turn-off energy loss per pulse E off Tj=25°C Rgon=40Ohm1560015mWs Abschaltverlustenergie pro Puls Tj=125°C Rgoff=20Ohm2,19Input capacitance C ies Tj=25°C f=1MHz0251,1nF Eingangskapazität Tj=125°COutput capacitance C oss Tj=25°C f=1MHz0250,058nF Ausgangskapazität Tj=125°CReverse transfer capacitance C rss Tj=25°C f=1MHz0250,048nF Rückwirkungskapazität Tj=125°CGate charge Q Gate Tj=25°C159601585nC Gate Ladung Tj=125°CThermal resistance chip to heatsink per chipWärmewiderstand Chip-Kühlkörper pro Chip RthJH Thermal greasethickness≤50um 1,81K/WThermal resistance chip to case per chip Wärmewiderstand Chip-Gehause pro Chip WarmeleitpasteDicke≤50umλ = 0,61 W/mK1,19Diode InverterDiode WechselrichterDiode forward voltage V F Tj=25°C152,323V Durchlaßspannung Tj=125°C1,78Peak reverse recovery current I RRM Tj=25°C Rgon=40Ohm1560015A Rückstromspitze Tj=125°C31Reverse recovery time t rr Tj=25°C Rgon=40Ohm1560015ns Sperreverzögerungszeit Tj=125°C355Reverse recovered charge Q rr Tj=25°C Rgon=40Ohm1560015uC Sperrverzögerungsladung Tj=125°C3,5Reverse recovered energy Erec Rgon=40Ohm1560015mWs Sperrverzögerungsenergie1,32Thermal resistance chip to heatsink per chipWärmewiderstand Chip-Kühlkörper pro Chip RthJH Thermal greasethickness≤50um 2,64K/WThermal resistance chip to case per chip Wärmewiderstand Chip-Gehause pro Chip WarmeleitpasteDicke≤50umλ = 0,61 W/mK1,74T(C°)Other conditions VGE(V)VCE(V)IC(A) IF(A)(Rgon-Rgoff)VGS(V)VDS(V)Id(A)Min Typ Max Transistor BRCTransistor BRCGate emitter threshold voltage V GE(th)Tj=25°C VCE=VGE0,000355,86,5V Gate-Schwellenspannung Tj=125°CCollector-emitter saturation voltage V CE(sat)Tj=25°C15101,872,7V Kollektor-Emitter Sättigungsspannung Tj=125°C2,19Collector-emitter cut-off I CES Tj=25°C012000,05mA Kollektor-Emitter Reststrom Tj=125°C2Gate-emitter leakage current I GES Tj=25°C200200nA Gate-Emitter Reststrom Tj=125°CTurn-on delay time t d(on)Tj=25°C Rgon=80Ohm1560010ns Einschaltverzögerungszeit Tj=125°C Rgoff=40Ohm34Rise time t r Tj=25°C Rgon=80Ohm1560010ns Anstiegszeit Tj=125°C Rgoff=40Ohm20Turn-off delay time t d(off)Tj=25°C Rgon=80Ohm1560010ns Abschaltverzögerungszeit Tj=125°C Rgoff=40Ohm442Fall time t f Tj=25°C Rgon=80Ohm1560010ns Fallzeit Tj=125°C Rgoff=40Ohm284Turn-on energy loss per pulse EonTj=25°C Rgon=80Ohm1560010uWs Einschaltverlustenergie pro Puls Tj=125°C Rgoff=40Ohm0,92Turn-off energy loss per pulse EoffTj=25°C Rgon=80Ohm1560010uWs Abschaltverlustenergie pro Puls Tj=125°C Rgoff=40Ohm1,47Input capacitance CissTj=25°C f=1MHz0250,6nF Eingangskapazität Tj=125°COutput capacitance C oss Tj=25°C f=1MHz0250,037nF Ausgangskapazität Tj=125°CReverse transfer capacitance Cies Tj=25°C f=1MHz0250,029nF Rückwirkungskapazität Tj=125°CGate charge Qgate Tj=25°C159601053nC Gate Ladung Tj=125°CThermal resistance chip to heatsink per chipWärmewiderstand Chip-Kühlkörper pro Chip RthJH Thermal greasethickness≤50um 2,56K/WThermal resistance chip to case per chip Wärmewiderstand Chip-Gehause pro Chip WarmeleitpasteDicke≤50umλ = 0,61 W/mK1,69Diode BRCDiode BRCDiode forward voltage VFTj=25°C101,82,5V Durchlaßspannung Tj=125°C1,79Reverse current I r Tj=25°C1200250uA Sperrstrom Tj=150°C700Reverse recovery time trrTj=25°C Rgon=80Ohm1560010ns Sperreverzögerungszeit Tj=125°C423Reverse recovered charge QrrTj=25°C Rgon=80Ohm1560010uC Sperrverzögerungsladung Tj=125°C2,1Reverse recovery energy E rec Tj=25°C Rgon=80Ohm1560010uWs Sperrverzögerungsenergie Tj=125°C0,88Thermal resistance chip to heatsink per chipWärmewiderstand Chip-Kühlkörper pro Chip RthJH Thermal greasethickness≤50um 3,05K/WThermal resistance chip to case per chip Wärmewiderstand Chip-Gehause pro Chip WarmeleitpasteDicke≤50umλ = 0,61 W/mK2,01NTC-ThermistorNTC-WiderstandRated resistance R25Tj=25°C Tol. ±5%20,92223,1kOhm NennwiderstandDeviation of R100D R/R Tc=100°C R100=1503Ohm2,9%/K Abweichung von R100Power dissipation given Epcos-Typ P Tj=25°C210mW Verlustleistung Epcos-Typ angebenB-value B(25/100)Tj=25°C Tol. ±3%3980K B-WertOutput inverterFigure 1.Typical output characteristicsFigure 2.Typical output characteristicsOutput inverter IGBTOutput inverter IGBTIc= f(V CE )parameter: tp = 250 µs Tj = 25 °CV GE parameter:from:7V to 17VV GE parameter:from:7V to 17Vin 1V steps in 1V stepsFigure 3.Typical transfer characteristicsFigure 4.Typical diode forward current asOutput inverter IGBTa function of forward voltageIc= f(V GE )Output inverter FREDI F =f(V F )parameter: tp = 250 µs V CE = 13VOutput inverterFigure 5.Typical switching energy lossesFigure 6.Typical switching energy losses as a function of collector current as a function of gate resistor Output inverter IGBTOutput inverter IGBTinductive load, Tj = 125 °CV CE =600V V CE =600V V GE =15VV GE =15V R G on = 2*R Goff =40ΩIc =15AFigure 7.Typical switching times as aFigure 8.Typical switching times as a function of collector currentfunction of gate resistor Output inverter IGBTOutput inverter IGBTt = f (Ic)t = f (R G )inductive load, Tj = 125 °Cinductive load, Tj = 125 °CV CE =600V V CE =600V V GE =15VV GE =15V R G on = 2*R Goff =40ΩIc =15AOutput inverterFigure 9.Typical reverse recovery time as aFigure 10.Typical reverse recovery current as afunction of IGBT turn on gate resistor function of IGBT turn on gate resistor Output inverter FRED diodeOutput inverter FRED diodet rr = f (Rgon)I RRM = f (Rgon)Tj =125°C Tj =125°C V R =600V V R =600V I F =15A I F =15AFigure 11.Typical reverse recovery charge as aFigure 12.Typical rate of fall of forwardfunction of IGBT turn on gate resistor and reverse recovery current as aOutput inverter FRED diodefunction of IGBT turn on gate resistor Q rr = f (Rgon)Output inverter FRED diode dI0/dt,dIrec/dt = f (Rgon)Tj =125°C Tj =125°C V R =600V V R =600V I F =15A I F =15AOutput inverterFigure 13.IGBT transient thermal impedance Figure 14.FRED transient thermal impedance as a function of pulse width as a function of pulse widthZ th JH = f(tp)Z th JH = f(tp)R (C/W)Tau (s)R (C/W)Tau (s)0,035,5E+010,045,2E+010,092,7E+000,161,8E+000,324,6E-010,742,4E-010,821,4E-011,176,3E-020,342,8E-020,415,8E-030,125,5E-030,147,8E-040,106,2E-040,342,8E-040,000,0E+00Output inverterFigure 15.Power dissipation as aFigure 16.Collector current as afunction of heatsink temperature function of heatsink temperature Output inverter IGBTOutput inverter IGBTP tot = f (Th)I c = f (Th)V GE =15VFigure 17.Power dissipation as aFigure 18.Forward current as afunction of heatsink temperaturefunction of heatsink temperature Output inverter FREDOutput inverter FREDP tot = f (Th)I F = f (Th)parameter: Tj = 150°C parameter: Tj = 150°CBrakeFigure 19.Typical output characteristicsFigure 20.Typical output characteristicsBrake IGBTBrake IGBTIc= f(V CE )Ic= f(V CE )parameter: tp = 250 µs Tj = 25 °Cparameter: tp = 250 µsTj = 125 °CV GE parameter:from:7V to17VV GE parameter:from:7V to17Vin 1V stepsin 1V stepsFigure 21.Typical transfer characteristicsFigure 22.Typical diode forward current asBrake IGBTa function of forward voltageIc= f(V GE )Brake FREDI F =f(V F )parameter: tp = 250 µs V CE = 10 V parameter: tp = 250 µsBrakeFigure 23.Typical switching energy lossesFigure 24.Typical switching energy lossesas a function of collector current as a function of gate resistor Brake IGBTBrake IGBTE = f (Ic)E = f (R G )inductive load, Tj = 125 °CV CE =600V V CE =600V V GE =15VV GE =15V R G on = 2*R Goff =80ΩIc =10AFigure 25.Typical switching times as aFigure 26.Typical switching times as afunction of collector currentfunction of gate resistor Brake IGBTBrake IGBTt = f (Ic)t = f (R G )inductive load, Tj = 125 °Cinductive load, Tj = 125 °CVCE =600V V CE =600V V GE =15VV GE =15V R G on = 2*R Goff =80ΩIc =10ABrakeFigure 27.IGBT transient thermal impedanceFigure 28.FRED transient thermal impedanceas a function of pulse widthas a function of pulse widthZ th JH = f(tp)Z th JH = f(tp)Parameter: D = tp / T RthJH 3,05K/WFigure 29.Power dissipation as aFigure 30.Collector current as afunction of heatsink temperature function of heatsink temperature Brake IGBTBrake IGBTP tot = f (Th)I c = f (Th)parameter: Tj = 150°Cparameter: Tj = 150°CV GE =15VBrakeFigure 32.Forward current as afunction of heatsink temperatureBrake FREDI F = f (Th)parameter: Tj = 150°Cparameter: Tj = 150°CInput rectifier bridgeFigure 33.Typical diode forward current asFigure 34.Diode transient thermal impedancea function of forward voltageas a function of pulse widthRectifier diodeI F =f(V F )Z th JH = f(tp)Figure 35.Power dissipation as aFigure 36.Forward current as afunction of heatsink temperature function of heatsink temperature Rectifier diodeRectifier diodeP tot = f (Th)I F = f (Th)parameter: Tj = 150°C parameter: Tj = 150°CThermistorFigure 37.Typical NTC characteristicas a function of temperatureR T= f (T)Output inverter applicationGeneral conditions:3 phase SPWM,Vgeon=15VVgeoff=0VRgon=40ohmsRgoff=20ohmsFigure 1.Typical avarage static loss Figure 2.Typical avarage static lossas a function of output currentas a function of output currentModulation index * cosfi Modulation index * cosfi parameter Mi*cosfi from -1,00to1,00parameter Mi*cosfi from -1,00to1,00in 0,20stepsin 0,20stepsFigure 3.Typical avarage switching loss Figure 4.Typical avarage switching lossas a function of output currentas a function of output currentFREDPloss=f(Iout)Conditions:Tj=125CDC link=600VDC link=600VSwitching freq.fsw from2kHz to 16kHzSwitching freq.fsw from2kHz to 16kHzparameter in* 2stepsparameter in* 2stepsOutput inverter applicationGeneral conditions:3 phase SPWM,Vgeon=15VVgeoff=0VRgon=40ohmsRgoff=20ohmsFigure 5.Typical available 50Hz output current Figure 6.Typical available 50Hz output currentas a function of Mi*cosfias a function of switching frequencyPhaseIout=f(Mi*cosfi)PhaseIout=f(fsw)Conditions:Tj=125CDC link=600V DC link=600V fsw=4kHz Mi*cosfi=0,8Heatsink temp.Th from60°C to 100°C Heatsink temp.Th from60°C to 100°C parameterin5°C stepsparameterin5°C stepsFigure 7.Typical available 50Hz output currentFigure 8.Typical available 0Hz output currentas a function of Mi*cosfi and fswas a function of switching frequencyPhaseIout=f(fsw,Mi*cosfi)PhaseIoutpeak=f(fsw)DC link=600V DC link=600VTh=80°CHeatsink temp.Th from60°C to 100°C parameter in5°C stepsOutput inverter applicationGeneral conditions:3 phase SPWM,Vgeon=15VVgeoff=0VRgon=40ohmsRgoff=20ohmsFigure 9.Typical available electric Figure 10.Typical efficiencypeak output power as aas a function of output powerfunction of heatsink temperatureInverterPout=f(Th)Inverterefficiency=f(Pout)Conditions:Tj=125CConditions:Tj=125CDC link=600VDC link=600VModulation index Mi=1Modulation index Mi=1cosfi=0,80cosfi=0,80Switching freq.fsw from 2kHz to 16kHzSwitching freq.fsw from 2kHz to 16kHzparameter in * 2stepsparameter in * 2stepsConditions:Tj=125CDC link=600VModulation index Mi=1cosfi=0,8Switching freq.fsw from 1kHz to 16kHzparameter in * 2steps Heatsink temperature=80°CMotor efficiency=0,85。

V23990-P545-A中文资料

Maximum values Datasheet values Parameter Condition Symbol max.UnitGleichrichterRepetitive peak reverse voltage V RRM1600V Periodische Rückw. SpitzensperrspannungForward current per diode DC current Th =80°C;IFAV30ADauergrenzstrom Tc=80°C40-limited by wiresSurge forward current t p=10ms T j=25°C I FSM200A Stoßstrom GrenzwertI2t-value tp=10ms T j=25°C I2t200A2s GrenzlastintegralPower dissipation per Diode T j=150°C T h=80°C P tot36W Verlustleistung pro Diode T c=80°C54Transistor WechselrichterCollector-emitter break down voltage V CE600V Kollektor-Emitter-SperrspannungDC collector current T j=150°C T h=80°C,I C17A Kollektor-Dauergleichstrom T c=80°C20-limited by wires Repetitive peak collector current t p=1ms T h=80°C I cpuls32A Periodischer KollektorspitzenstromPower dissipation per IGBT T j=150°C T h=80°C P tot41W Verlustleistung pro IGBT T c=80°C62Gate-emitter peak voltage V GE±20V Gate-Emitter-SpitzenspannungSC withstand time Tj≤150°C V GE=15V t SC10us Kurzschlußverhalten V CE=V CEBRDiode InverterDiode WechselrichterDC forward current T j=150°C T h=80°C,I F19A Dauergleichstrom T c=80°C20-limited by wires Repetitive peak forward current t p=1ms T h=80°C I FRM38A Periodischer SpitzenstromPower dissipation per Diode T j=150°C T h=80°C P tot26W Verlustleistung pro Diode T c=80°C40Transistor BRCTransistor WechselrichterCollector-emitter break down voltage V CE600V Kollektor-Emitter-SperrspannungDC collector current T j=150°C T h=80°C I C11A Kollektor-Dauergleichstrom T j=150°C15Repetitive peak collector current t p=1ms T h=80°C I cpuls23A Periodischer KollektorspitzenstromPower dissipation per IGBT T j=150°C T h=80°C P tot27W Verlustleistung pro IGBT41Gate-emitter peak voltage V GE±20V Gate-Emitter-SpitzenspannungSC withstand time Tj≤150°C VGE=15V t SC10us Kurzschlußverhalten VCE=600/1200 VMaximum values Datasheet values Parameter Condition Symbol max.UnitDiode BRCDC forward current T j=150°C T h=80°C I F13A Dauergleichstrom T j=150°C17Repetitive peak forward current t p=1ms T h=80°C I FRM26A Periodischer SpitzenstromPower dissipation per Diode T j=150°C T h=80°C P tot23W Verlustleistung pro Diode35Thermal propertiesThermische Eigenschaften150°C max. Chip temperature Tjmaxmax. Chiptemperatur-40…+125°C Storage temperature TstgLagertemperatur-40…+125°C Operation temperature TopBetriebstemperaturInsulation propertiesModulisolationInsulation voltage t=1min V4000VdcisIsolationsspannungCreepage distance min 12,7mm KriechstreckeClearance min 12,7mm LuftstreckeDescription Symbol Conditions Datasheet values UnitT(C°)Other conditions VGE(V)VR(V)VCE(V)IC(A)IF(A)(Rgon-Rgoff)VGS(V)VDS(V)Id(A)Min Typ MaxInput Rectifier BridgeGleichrichterForward voltage V F Tj=25°C301,221,45V Durchlaßpannung Tj=125°C1,21Threshold voltage (for power loss calc. only)V to Tj=25°C300,92V Schleusenspannung Tj=125°C0,81Slope resistance (for power loss calc. only)r t Tj=25°C0,01Ohm Ersatzwiderstand Tj=125°C300,013Reverse current I r Tj=25°C12000,02mA Sperrstrom Tj=150°C4Thermal resistance chip to heatsink per chip RthJH Thermal greasethickness≤50um 1,93K/WWärmewiderstand Chip-Kühlkörper pro Chip WarmeleitpasteDicke≤50umλ = 0,61 W/mK1,2738Transistor Inverter, inductive loadTransistor WechselrichterGate emitter threshold voltage V GE(th)Tj=25°C VCE=VGE0,0005345V Gate-Schwellenspannung Tj=125°CCollector-emitter saturation voltage V CE(sat)Tj=25°C15202,233V Kollektor-Emitter Sättigungsspannung Tj=125°C2,65Collector-emitter cut-off I CES Tj=25°C06000,1mA Kollektor-Emitter Reststrom Tj=125°C2Gate-emitter leakage current I GES Tj=25°C250200nA Gate-Emitter Reststrom Tj=125°CIntegrated Gate resistor R gint -Ohm Integrirter Gate WiderstandTurn-on delay time t d(on)Tj=25°C Rgon=26Ohm1530020ns Einschaltverzögerungszeit Tj=125°C Rgoff=13Ohm17Rise time t r Tj=25°C Rgon=26Ohm1530020ns Anstiegszeit Tj=125°C Rgoff=13Ohm17Turn-off delay time t d(off)Tj=25°C Rgon=26Ohm1530020ns Abschaltverzögerungszeit Tj=125°C Rgoff=13Ohm201Fall time t f Tj=25°C Rgon=26Ohm1530020ns Fallzeit Tj=125°C Rgoff=13Ohm28Turn-on energy loss per pulse E on Tj=25°C Rgon=26Ohm1530020mWs Einschaltverlustenergie pro Puls Tj=125°C Rgoff=13Ohm0,43Turn-off energy loss per pulse E off Tj=25°C Rgon=26Ohm1530020mWs Abschaltverlustenergie pro Puls Tj=125°C Rgoff=13Ohm0,391Input capacitance C ies Tj=25°C f=1MHz0251,11,32nF Eingangskapazität Tj=125°COutput capacitance C oss Tj=25°C f=1MHz0250,1070,128nF Ausgangskapazität Tj=125°CReverse transfer capacitance C rss Tj=25°C f=1MHz0250,0630,076nF Rückwirkungskapazität Tj=125°CGate charge Q Gate Tj=25°C1548020100130nC Gate Ladung Tj=125°CThermal resistance chip to heatsink per chipWärmewiderstand Chip-Kühlkörper pro Chip RthJH Thermal greasethickness≤50um 1,7K/WThermal resistance chip to case per chip Wärmewiderstand Chip-Gehause pro Chip WarmeleitpasteDicke≤50umλ = 0,61 W/mK1,122Diode InverterDiode WechselrichterDiode forward voltage V F Tj=25°C201,772,6V Durchlaßspannung Tj=125°C1,48Peak reverse recovery current I RRM Tj=25°C Rgon=26Ohm1530020A Rückstromspitze Tj=125°C30Reverse recovery time t rr Tj=25°C Rgon=26Ohm1530020ns Sperreverzögerungszeit Tj=125°C60Reverse recovered charge Q rr Tj=25°C Rgon=26Ohm1530020uC Sperrverzögerungsladung Tj=125°C1,04Reverse recovered energy Erec Tj=25°C Rgon=26Ohm1530020mWs Sperrverzögerungsenergie Tj=125°C0,141Thermal resistance chip to heatsink per chipWärmewiderstand Chip-Kühlkörper pro Chip RthJH Thermal greasethickness≤50um 2,66K/WThermal resistance chip to case per chip Wärmewiderstand Chip-Gehause pro Chip WarmeleitpasteDicke≤50umλ = 0,61 W/mK1,7556Description Symbol Conditions Datasheet values UnitT(C°)Other conditions VGE(V)VR(V)VCE(V)IC(A)IF(A)(Rgon-Rgoff)VGS(V)VDS(V)Id(A)Min Typ Max Transistor BRCTransistor BRCGate emitter threshold voltage V GE(th)Tj=25°C VCE=VGE0,0002345V Gate-Schwellenspannung Tj=125°CCollector-emitter saturation voltage V CE(sat)Tj=25°C15101,92,7V Kollektor-Emitter Sättigungsspannung Tj=125°C2,18Collector-emitter cut-off I CES Tj=25°C06000,055mA Kollektor-Emitter Reststrom Tj=125°C0,7Gate-emitter leakage current I GES Tj=25°C250200nA Gate-Emitter Reststrom Tj=125°CTurn-on delay time t d(on)Tj=25°C Rgon=56Ohm1530010ns Einschaltverzögerungszeit Tj=125°C Rgoff=28Ohm18Rise time t r Tj=25°C Rgon=56Ohm1530010ns Anstiegszeit Tj=125°C Rgoff=28Ohm18Turn-off delay time t d(off)Tj=25°C Rgon=56Ohm1530010ns Abschaltverzögerungszeit Tj=125°C Rgoff=28Ohm243Fall time t f Tj=25°C Rgon=56Ohm1530010ns Fallzeit Tj=125°C Rgoff=28Ohm34Turn-on energy loss per pulse EonTj=25°C Rgon=56Ohm1530010uWs Einschaltverlustenergie pro Puls Tj=125°C Rgoff=28Ohm0,194Turn-off energy loss per pulse EoffTj=25°C Rgon=56Ohm1530010uWs Abschaltverlustenergie pro Puls Tj=125°C Rgoff=28Ohm0,228SC withstand time tSCus KurzschlußverhaltenInput capacitance CissTj=25°C f=1MHz0250,350,42nF Eingangskapazität Tj=125°COutput capacitance C oss Tj=25°C f=1MHz0250,0380,046nF Ausgangskapazität Tj=125°CReverse transfer capacitance Cies Tj=25°C f=1MHz0250,0230,028nF Rückwirkungskapazität Tj=125°CGate charge Qgate Tj=25°C1548063242nC Gate Ladung Tj=125°CThermal resistance chip to heatsink per chipWärmewiderstand Chip-Kühlkörper pro Chip RthJH Thermal greasethickness≤50um 2,41K/WThermal resistance chip to case per chip Wärmewiderstand Chip-Gehause pro Chip WarmeleitpasteDicke≤50umλ = 0,61 W/mK1,5906Diode BRCDiode BRCDiode forward voltage VFTj=25°C101,672,15V Durchlaßspannung Tj=125°C1,58Reverse current I r Tj=25°C Rgon=56Ohm1530010250uA Sperrstrom Tj=125°CReverse recovery time trrTj=25°C Rgon=56Ohm1530010ns Sperreverzögerungszeit Tj=125°C60Reverse recovered charge QrrTj=25°C Rgon=56Ohm1530010uC Sperrverzögerungsladung Tj=125°C1,04Reverse recovery energy E rec Tj=25°C Rgon=56Ohm1530010uWs Sperrverzögerungsenergie Tj=125°C0,14Thermal resistance chip to heatsink per chipWärmewiderstand Chip-Kühlkörper pro Chip RthJH Thermal greasethickness≤50um 2,66K/WThermal resistance chip to case per chip Wärmewiderstand Chip-Gehause pro Chip Warmeleitpaste Dicke≤50um λ = 0,61 W/mKNTC-ThermistorNTC-WiderstandRated resistance R25Tj=25°C Tol. ±5%20,92223,1kOhm NennwiderstandDeviation of R100D R/R Tc=100°C R100=1503Ohm2,9%/K Abweichung von R100Power dissipation given Epcos-Typ P Tj=25°C210mW Verlustleistung Epcos-Typ angebenB-value B(25/100)Tj=25°C Tol. ±3%3980K B-WertOutput inverterFigure 1.Typical output characteristics Figure 2.Typical output characteristics Output inverter IGBT Output inverter IGBTV GE parameter:from:6V to16V V GE parameter:from:6V to16V in1V steps in1V steps Figure 3.Typical transfer characteristics Figure 4.Typical diode forward current as Output inverter IGBT a function of forward voltageOutput inverter FRED I F=f(V F)CE18V parameter: tp = 250 µsOutput inverterFigure 5.Typical switching energy losses Figure 6.Typical switching energy losses as a function of collector current as a function of gate resistor Output inverter IGBTOutput inverter IGBTV CE =300V V CE =300V V GE =15VV GE =15V R G on = 2*R Goff =26ΩIc =20AFigure 7.Typical switching times as aFigure 8.Typical switching times as a function of collector current function of gate resistor Output inverter IGBTOutput inverter IGBTt = f (Ic)t = f (R G )inductive load, Tj = 125 °CV CE =300V V CE =300V V GE =15VV GE =15V R G on = 2*R Goff =26ΩIc =20AOutput inverterFigure 9.Typical reverse recovery time as a Figure 10.Typical reverse recovery current as a function of IGBT turn on gate resistor function of IGBT turn on gate resistor Output inverter FRED diodeOutput inverter FRED dioderrRRM Tj =125°C Tj =125°C V R =300V V R =300V I F =20A I F =20AFigure 11.Typical reverse recovery charge as aFigure 12.Typical rate of fall of forward function of IGBT turn on gate resistor and reverse recovery current as aOutput inverter FRED diodefunction of IGBT turn on gate resistor Q rr = f (Rgon)Output inverter FRED diode dI0/dt,dIrec/dt = f (Rgon)Tj =125°C Tj =125°CV R =300V V R =300V I F =20A I F =20AFigure 13.IGBT transient thermal impedance Figure 14.FRED transient thermal impedance as a function of pulse width as a function of pulse widthZ th JH = f(tp)Z th JH = f(tp)IGBT thermal model values FRED thermal model valuesR (C/W)Tau (s)R (C/W)Tau (s)0,067,1E+000,03-3,3E+020,227,3E-010,181,7E+000,861,4E-010,801,8E-010,403,3E-020,955,2E-020,113,5E-030,366,5E-030,251,3E-03Figure 15.Power dissipation as a Figure 16.Collector current as afunction of heatsink temperatureOutput inverter IGBTI c = f (Th)V GE=15VFigure 17.Power dissipation as a Figure 18.Forward current as a function of heatsink temperature function of heatsink temperatureOutput inverter FRED Output inverter FREDP tot = f (Th)I F = f (Th)parameter: Tj = 150°C parameter: Tj = 150°CBrakeFigure 19.Typical output characteristicsFigure 20.Typical output characteristicsBrake IGBTparameter: tp = 250 µsTj = 125 °CV GE parameter:from:6V to16VV GE parameter:from:6V to16Vin 1V stepsin 1V stepsFigure 21.Typical transfer characteristicsFigure 22.Typical diode forward current asBrake IGBTa function of forward voltageIc= f(V GE )Brake FREDI F =f(V F )CE parameter: tp = 250 µsBrakeFigure 23.Typical switching energy lossesFigure 24.Typical switching energy lossesas a function of collector current as a function of gate resistor Brake IGBTBrake IGBTE = f (Ic)E = f (R G )inductive load, Tj = 125 °CV CE =300V V CE =300V V GE =15VV GE =15V R G on = 2*R Goff =56ΩIc =10AFigure 25.Typical switching times as aFigure 26.Typical switching times as a function of collector currentfunction of gate resistor Brake IGBTBrake IGBTt = f (Ic)t = f (R G )inductive load, Tj = 125 °CV CE =300V V CE =300V V GE =15VV GE =15V R G on = 2*R Goff =56ΩIc =10AFigure 27.IGBT transient thermal impedanceFigure 28.FRED transient thermal impedance as a function of pulse widthas a function of pulse widthZ th JH = f(tp)Z th JH = f(tp)Parameter: D = tp / T RthJH=3,79K/WFigure 29.Power dissipation as aFigure 30.Collector current as afunction of heatsink temperature function of heatsink temperature Brake IGBTBrake IGBTP tot = f (Th)I c = f (Th)parameter: Tj = 150°Cparameter: Tj = 150°CV GE =15VFigure 32.Forward current as afunction of heatsink temperatureBrake FREDI F = f (Th)parameter: Tj = 150°Cparameter: Tj = 150°CInput rectifier bridgeFigure 33.Typical diode forward current asFigure 34.Diode transient thermal impedance a function of forward voltageas a function of pulse widthRectifier diodeI F =f(V F )Z th JH = f(tp)parameter: tp = 250 µsFigure 35.Power dissipation as aFigure 36.Forward current as afunction of heatsink temperaturefunction of heatsink temperature Rectifier diodeRectifier diodeP tot = f (Th)I F = f (Th)parameter: Tj = 150°C parameter: Tj = 150°CThermistorFigure 37.Typical NTC characteristicas a function of temperatureR T= f (T)Output inverter applicationGeneral conditions:3 phase SPWM,Vgeon=15V Vgeoff=0V Rgon=26ohms Rgoff=13ohms Figure 1.Typical avarage static loss Figure 2.Typical avarage static loss as a function of output current as a function of output currentFRED Ploss=f(Iout)Modulation index * cosfi Modulation index * cosfiparameter Mi*cosfi from-1,00to1,00parameter Mi*cosfi from-1,00to1,00in0,20steps in0,20stepsFigure 3.Typical avarage switching loss Figure 4.Typical avarage switching loss as a function of output current as a function of output currentIGBT Ploss=f(Iout)FRED Ploss=f(Iout)DC link=320V DC link=320VSwitching freq.fsw from2kHz to16kHz Switching freq.fsw from2kHz to16kHz parameter in* 2steps parameterin* 2stepsOutput inverter applicationGeneral conditions:3 phase SPWM,Vgeon=15V Vgeoff=0V Rgon=26ohms Rgoff=13ohms Figure 5.Typical available 50Hz output current Figure 6.Typical available 50Hz output current as a function of Mi*cosfi as a function of switching frequencyPhase Iout=f(Mi*cosfi)Phase Iout=f(fsw)DC link=320V DC link=320Vfsw=16kHz Mi*cosfi=0,8 Heatsink temp.Th from60°C to100°C Heatsink temp.Th from60°C to100°C parameter in5°C steps parameter in5°C stepsFigure 7.Typical available 50Hz output current Figure 8.Typical available 0Hz output current as a function of Mi*cosfi and fsw as a function of switching frequencyPhase Iout=f(fsw,Mi*cosfi)Phase Ioutpeak=f(fsw)DC link=320V DC link=320VTh=80°C Heatsink temp.Th from60°C to100°Cparameter in5°C stepsOutput inverter applicationGeneral conditions:3 phase SPWM,Vgeon=15V Vgeoff=0V Rgon=26ohms Rgoff=13ohms Figure 9.Typical available electric Figure 10.Typical efficiencypeak output power as a as a function of output powerfunction of heatsink temperatureInverter Pout=f(Th)Inverter efficiency=f(Pout)Conditions:Tj=125CDC link=320VModulation index Mi=1cosfi=0,80Switching freq.fsw from2kHz to16kHzparameter in* 2stepsConditions:Tj=125CDC link=320VModulation index Mi=1cosfi=0,8Switching freq.fsw from1kHz to16kHzparameter in* 2stepsHeatsink temperature=80°CMotor efficiency=0,85。

V23990-P320-A-PM中文资料

flow PIM ® 1+S, 1200V, 15A V23990-P320-A-PMMaximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specifiedParameterSymbol Value UnitInput Rectifier Bridge GleichrichterRepetitive peak reverse voltageVRRM1500V Periodische Rückw. Spitzensperrspannung Forward average current sine TC=80°C IFAV 24A Dauergrenzstrom d=0.5Surge forward current tp=10ms TJ=25°C IFSM 250A Stoßstrom Grenzwert I2t-valuetp=10ms TJ=25°C I2t 310A2s GrenzlastintegralPower dissipation per Diode Tj=150°CTC=25°C Ptot87WVerlustleistung pro DiodeTC=80°C49Transistor InverterTransistor WechselrichterCollector-emitter break down voltage VCE1200V Kollektor-Emitter-Sperrspannung DC collector currentTj=150°C TC=80°C IC 16A Kollektor-DauergleichstromRepetitive peak collector current Tj=150°C TC=80°C Icpuls 32A Periodischer Kollektorspitzenstrom tp=1ms Power dissipation per IGBT Tj=150°CTC=25°C Ptot 111W Verlustleistung pro IGBT TC=80°C62Gate-emitter peak voltageVGE±20VGate-Emitter-Spitzenspannung Diode InverterDiode Wechselrichter DC forward current Tj=150°C TC=80°C IF 20A DauergleichstromRepetitive peak forward current Tj=150°C TC=80°C IFRM 40A Periodischer Spitzenstrom tp=1ms Power dissipation per Diode Tj=150°CTC=25°C Ptot64WVerlustleistung pro DiodeTC=80°C36BRC Transistor BRC TransistorCollector-emitter break down voltage VCE1200V Kollektor-Emitter-Sperrspannung DC collector currentTj=150°C TC=80°C IC 13A Kollektor-DauergleichstromRepetitive peak collector current Tj=150°C TC=80°C Icpuls 25A Periodischer Kollektorspitzenstrom tp=1ms Power dissipation per IGBT Tj=150°CTC=25°C Ptot 89W Verlustleistung pro IGBT TC=80°C50Gate-emitter peak voltageVGE±20VGate-Emitter-SpitzenspannungConditionBRC DiodeBRC DiodeDC forward current Tj=150°C TC=80°C IF10A DauergleichstromRepetitive peak forward current Tj=150°C TC=80°C IFRM20A Periodischer Spitzenstrom tp=1msPower dissipation per Diode Tj=150°C TC=25°C Ptot48W Verlustleistung pro Diode TC=80°C27Thermal propertiesThermische Eigenschaftenmax. Chip temperature Tjmax150°C max. ChiptemperaturStorage temperature Tstg-40…+125°C LagertemperaturThermal resistance, chip to case Diode Rectifier RthJC1,43K/W Wärmewiderstand Chip-Bodenplatte Transistor Inverter RthJC1,13K/W per chip Diode Inverter RthJC1,94K/WTransistor BRC RthJC1,4K/WDiode BRC RthJC2,58K/W Insulation propertiesModulisolationInsulation test voltage t=1min V is4000Vdc IsolationsspannungCreepage distance12,7mm KriechstreckeClearance12,7mm Luftstreckeflow PIM ® 1+S, 1200V, 15AV23990-P320-_-__Characteristic values / Charakterische Werteat T j =25°C, unless otherwise specifiedParameterSymbol Condition:T R G V GE V CE I F I C Value Unit(°C)(Ω)(V)(V)(A)(A)min.typ.max.max.Input Rectifier Bridge Gleichrichter Forward voltage V F T J =25°C 151,11V DurchlaßpannungThreshold voltage (for power loss calc. only)Vto T J =25°C 150,89V SchleusenspannungSlope resistance (for power loss calc. only)rt T J =25°C 1514,68m ΩErsatzwiderstand Reverse current IrV R =V RmaxT J =25°C0,02mASperrstromTransistor Inverter, inductive load Transistor Wechselrichter Gate emitter threshold voltage V GE(th)Vge=Vce Tj=25°C 0.00064,505,506,50V Gate-SchwellenspannungCollector-emitter saturation voltage V CE(sat)T C =25°C 15151,802,202,60V Kollektor-Emitter SättigungsspannungCollector-emitter cut-off current incl. FRED I CES T C =25°C 01200100µA Kollektor-Emitter Reststrom inkl. FRED Gate-emitter leakage current I GES Tj=25°C300120nA Gate-Emitter Reststrom Turn-on delay timet d(on)Rg(on)=Rg(off)T J =25°C 32ns Einschaltverzögerungszeit T J =125°C 40Rise time t r Rg(on)=Rg(off)T J =25°C 74ns AnstiegszeitT J =125°C 50Turn-off delay timet d(off)Rg(on)=Rg(off)T J =25°C 342ns Abschaltverzögerungszeit T J =125°C 743Fall time t f Rg(on)=Rg(off)T J =25°C 32nsFallzeitT J =125°C 40Turn-on energy loss per pulse E on Rg(on)=Rg(off)T J =125°C 151********µWs Einschaltverlustenergie pro Puls Turn-off energy loss per pulse E off Rg(on)=Rg(off)T J =125°C 3515120035465µWs Abschaltverlustenergie pro Puls SC withstand time t SC @ 10*Ic(max)T J ≤125°C 10µs Kurzschlußverhalten Input capacitance C ies f=1MHz T J =25°C 1nF EingangskapazitätReverse transfer capacitanceC rssf=1MHzTJ=25°C0250,07nFDiode InverterDiode Wechselrichter Diode forward voltage V F T J =25°C 151,90V DurchlaßspannungPeak reverse recovery current I RM dIF/dt=-380A/µs T J =125°C 1518A RückstromspitzeReverse recovery time t rr dIF/dt=-380A/msTJ=125°C 15TBD ns Sperreverzögerungszeit Reverse recovered charge Q rrT J =125°C3,40µCSperrverzögerungsladungdif/dt=200 A/µs 351512001200351512003535353535151200353515Transistor BrakeTransistor BremseGate emitter threshold voltage V GE(th)Vge=Vce Tj=25°C4,505,506,50V Gate-SchwellenspannungCollector-emitter saturation voltage V CE(sat)T C=25°C15101,902,402,90V Kollektor-Emitter SättigungsspannungCollector-emitter cut-off current incl. FRED I CES T C=25°C0120050,00µA Kollektor-Emitter Reststrom inkl. FREDGate-emitter leakage current I GES Tj=25°C300120,00nA Gate-Emitter ReststromTurn-on delay time t d(on)Rg(on)=Rg(off)T J=25°C TBD ns Einschaltverzögerungszeit T J=125°CRise time t r Rg(on)=Rg(off)T J=25°C TBD ns Anstiegszeit T J=125°CTurn-off delay time t d(off)Rg(on)=Rg(off)T J=25°C TBD ns Abschaltverzögerungszeit T J=125°CFall time t f Rg(on)=Rg(off)T J=25°C TBD ns Fallzeit T J=125°CTurn-on energy loss per pulse E on Rg(on)=Rg(off)T J=125°C TBDµWs Einschaltverlustenergie pro PulsTurn-off energy loss per pulse E off Rg(on)=Rg(off)T J=125°C TBDµWs Abschaltverlustenergie pro PulsSC withstand time t SC @ 10*Ic(max)T J≤125°C TBD10µs KurzschlußverhaltenInput capacitance C ies f=1MHz T J=25°C TBD nF EingangskapazitätReverse transfer capacitance C rss f=1MHz TJ=25°C025TBD nF Diode BrakeDiode BremseDiode forward voltage V F T J=25°C51,90V DurchlaßspannungPeak reverse recovery current I RM dIF/dt=-200A/µs T J=125°C TBD A RückstromspitzeReverse recovery time t rr dIF/dt=-200A/µs TJ=125°C TBD ns SperreverzögerungszeitReverse recovered charge Q rr T J=125°C TBDµC Sperrverzögerungsladung dif/dt=200 A/µsNTC-ThermistorNTC-WiderstandRated resistance R25Tc=25°C22kΩNennwiderstandRated resistance R100Tol. ±5%Tc=100°C1486ΩNennwiderstandPower dissipation P Tc=25°C210mW VerlustleistungB-value B(25/100)Tol. ±3%4000K B-WertShuntsShuntwiderständeR1-R3 value R Tol. 1%Tc=25°C10mΩR1-R3 WertPower dissipation P Tc=25°C2W Verlustleistung。

3710和3720型气动位器和3722型电-气转换器

3710和3720型气动位器和3722型电－气转换器图1.　定位器3710型气动定位器和3720型电－气定位器（图1）被设计用来和薄膜或活塞式旋转执行机构配合使用。

这些定位器能够按特定的输入信号使阀球或阀板停留在特定位置。

3710型定位器能根据气压输入信号使阀门停留在相应位置。

3720型定位器由3722型电－气转换器（图2）和3710型定位器组合而成。

3720型定位器能根据一个直流电流输入信号使阀门停留在相应位置。

与旋转执行机构配合使用时，两种定位器都能很容易地被用于单作用或双作用形式。

2002年8月气源接口W6144 / IL安装在费希尔1052型执行机构上的3720型定位器安装在费希尔1066型执行机构上的3720型定位器W6058-1 / IL输入接口外接地螺钉图2. 3722型电－气转换器W6145 / IL1/2-NPT或M20导线管连接D2437X12规格可用配置3710型：　■单作用或■双作用气动旋转阀门定位器3720型：　■单作用或■双作用电－气旋转阀门定位器由3710型和3722型组成3722型：　一个电-气转换器，将4-20mA直流输入信号转换成供气动定位器使用的0.2-1.0 bar(3-15 psig)气动信号输入信号(1)3710型：标准:■0.2-1.0 bar (3-15 psig)或■0.4-2.0 bar（6-30 psig）分程控制:■0.2-0.6 bar (3-9 psig)和0.6-1.0 bar(9-15 psig)或■0.4-1.2 bar(6-18 psig)和1.2-2.0 bar(18-30psig)3720型：标准: ■4-20mA直流电流且不超过30V的平稳直流电压。

分程使用: ■4-12mA直流电流或12-20mA直流电流。

等效电路3720型: 120欧姆，用3个5.6伏齐纳二极管并联输出信号(1)输出气动压力为执行机构所需最大气压。

作用方式(2): 可在气动阀门定位器上现场进行■正作用和■反作用之间调换。

创维恒流板参数信息表

创维恒流板参数信息表(2014-08-
恒流板
168P-P32DWE-00 168P-P32DWM-00 168P-P32DWM-20 168P-P32DWM-30 168P-P32DWM-31 168P-P32DWM-40 168P-P32DXM-20 168P-P32DXM-40 168P-D32WM0-00 168P-P37DXM-00 168P-P37DXM-10 168P-P39DWM-00 168P-P39DWM-01 168P-P39DWM-10 168P-P39DWM-20 168P-P39DWM-25 168P-P39DWM-26 168P-P39DWM-30 168P-P39DWM-40 168P-P39DXM-00 168P-P39DXM-02 168P-P39DXM-10 168P-P39DXM-30 168P-P39DXM-40 168P-P39DWR-00 168P-P40XM0-00 168P-P40XM0-01 168P-P40XM0-10 168P-P40DXM-00 168P-P42DXM-01 168P-P42DXM-02 168P-P42DXM-05 168P-P42DXM-06 168P-P42DXM-30 168P-P42DXM-40 168P-P42DXM-60 168P-P42DXM-65 168P-P42DXM-71 168P-P42DXM-75 168P-P42DXM-80 168P-P42DXM-85 168P-P42DXM-90
LC600DUK-SGE1
REL470FY(LDF-000) REL550FY(LDF-200) RDL550F0(LDF-000) REL550FY(LDF-100) SDL550FY(LDF-020) SEL550WY(CDF-300)

华普产品配置简介表070110

DAV-M2
DAV-M20 DAV-M25 DAV MM25EDV01 M300DV10 M3DV02 M3700DV01 M300DV10 M829DV10 MD0802ADV01 M829DV10 M829DV10 M829DV12 M829DV13 M827DV12 1613C Rev1.2 M827DV12 亿博达MT1389DE M856DV01
R838SV10 R808SV01 R808SV01 R808SV01 8393C Rer1.4 R808SV01
R801SV01 R801SV02 R801SV02 R801SV01 R801SV02 R838SV10 R838SV10 R838SV10 R808SV01 R801SV01 R550SV50 KD0823BSV01 10005C 10005C R858DV10 R858DV10 R808SV01 FK0861BSV03 R838SV10
话简板 K315SV10 K180SV03 K1803S02 K1806S05 K1809S01
输出板 R-OUT5 R838SV10 R1803S02 R1803S03 R1809D03 R100DV12 R200DV12 R838SV10 R1SV01（M1） P3SV01 R1SV01（M1）
芯片
适配器适配器 10004C Ver2.4 10004C Ver2.4 变压器EI57/35
K816SV03 K203SV02
AML3418或AML3400+VT7208 AML3433+VT7208 AML3438+VT7208 AML3438+VT7208 MT1389XE/D MT1389DE/E MT1389D/MAG+MT1336/B MT1389QE/D MT1389QE/D MT1389DE/H MT1389QE/D

UCS1903三通道LED驱动电路说明说明书

3-Channel Constant Current LED Driver UCS1903 (Products descriptions)The product UCS1903is the three-channel LED drive control circuit,internal integration MCU digital interface,data latches,LED high voltage driver etc.Realize the alone grey scale because through the periphery MCU to control this chip.The cascade connection control realizes the outdoors big screen Bitmap luminous,Product has the excellent performance,and quality is reliable.(Characteristics)Output power:15V maxInternal integration Regulator tube and the IC VDD PIN need to add resistance connection the power.External No need to add regulator tube256grey scales can adjustmentInternal integration RC oscillator,clock synchronous according to data signal,the next Chip can receive the Original signal because the before Chip receiver had finished and itself has function of the Automatic correction signal.Internal integration Reset circuitPWM can control256grey scales,Scan frequency no less than400Hz/sSerial interface,through the Single line finish the data receiving and decoding.Linear transmission,can unlimited cascade connectionNo need to add any circuit if transmission distance over10meters of tow points.The low speed model cascade numbers are not less than512points and high model not less than1024points If the Refresh frequency30Hz/s.Data sending speed can reach to400Kbps and800Kbps two kindsSupport preset constant current drive mode,according to the Red lights luminous intensity weak adjustment output current higher than the OUTG and OUTB.The White better引出端排列Pin Configurations:OUTR VDDOUTG SETOUTB DINGND DO 引出端功能PIN functions:（如无特殊说明，T A＝25℃，SS＝0V）Maximum ratings（如无特殊说明，T A＝−20～＋70℃，V SS＝0V）Working scope:逻辑电源电压power Voltage V DD -6-V -高电平输入电压Input high-Voltage LevelV IH 0.7V DD-V DDV -低电平输入电压Input low-Voltage LevelV IL-0.3V DDV-（如无特殊说明，T A ＝−20～＋70℃，V DD ＝4.5～5.5V ，V SS ＝0V ）Electrical parameters:（如无特殊说明，T A ＝−20～＋70℃，V DD ＝4.5～5.5V ，V SS ＝0V ）Switching Characteristics :dataF MAX400--Kbps占空比50%transmissionrateInputcapacitance C I--15pF-function descriptionThis Chip is Single line communication and adopts Overall pictures display technology.Receiving the DIN terminal sending data,The DO terminals begin to Forward data,provide data to the next Chip’s DIN terminals if the before Chip receiving enough24bit.DO terminal always down before forwarding and this Chip don’t receive new data.The OUTR,OUTG,OURB send out different changes according to receive24bit data.This Signal period:4ms.This Chip adopts atomic correction signal technology.So this Chip of cascade numbers don’t suffer signals restriction.Only limited Refresh frequency.For example:we have designing1024 cascade connection,it’s refresh time:1024X0.4X2＝0.8192ms(Chip data delay time:0.4µs) and no any Flashing phenomenon.Timing waveform chart:1）Input code2）low-speed model timeT0H 0码，高电平时间(0code,high leveltime)0.5µs±150nsT1H 1码，高电平时间(1code,high leveltime)2.0µs±150nsT0L 0码，低电平时间(0code,low leveltime)2.0µs±150nsT1L 1码，低电平时间(1code;low leveltime)0.5µs±150ns3）连接方法Connecting methods4）Data transmission methodNotes:D1is the MCU terminal transmission data,D2,D3,D4is Cascade circuit automatic forwarding data.5）Data structure of24bitR7R6R5R4R3R2R1R0G7G6G5G4G3G2G1G0B7B6B5B4B3B2B1B0 Note:according to RGB transmission.应用线路图Application circuit diagram21电源电压5V，带单颗LED(5Voltage Application) 3(12Voltage Application)45(24Voltage Application)UCS1903Power Supply Voltage can configuration6—24V,104p capacitance should to close IC, Resistance configuration according to different voltage.The below is resistance listed:电源电压建议电源接口与VDD间连接电阻5V10012V 3.3K24V 3.8K(外加三极管)封装外形图和尺寸Package Information:SOP8。

诺瓦科技LED拼接处理器VP001租赁机详细参数说明书

VP0高清数模西安诺瓦声明未经本公司书面许可，任何单位和个人不得擅自仿制、复制或抄译本手册部分或全部内容。

不得将本手册以任何形式（电子、机械、影印、录制或其它可能的方式）进行商业传播或用于任何商业、盈利目的。

在使用设备前，请认真阅读本手册。

手册中所提到的产品规格和咨询仅供参考，如有更新，恕不另行通知。

除非有特别约定，本手册仅作为使用指导，本手册中所有的陈述、信息等均不构成任何形式的担保。

商标信用VGA 和 XGA 是 IBM 公司的注册商标。

VESA 是视频电子标准协会的商标。

HDMI 、 HDMI 标志以及 High-Definition Multimedia Interface （高清多媒体数字接口）都是 HDMI Licensing LLC. 的商标。

安全须知高压危险：本产品的工作电压为 AC100 ～ V 240接地：本产品通过电源的地线与大地相连，请确保接地导体的良好接地。

电磁干扰：设备应远离磁铁、马达及变压器。

防潮：请将设备置于干燥、干净的环境中。

如有液体浸入，请立即拔掉电源插头。

远离易燃易爆危险物品禁止液体、金属碎片浸入机器内部，异面引起安全事故目录功能简介 (4)输入输出接口示意图 (4)前面板控制显示示意图 (5)电气参数 (6)菜单操作 (7)主界面 (7)主菜单 (8)输出设置 (9)双画面 (9)图像截取 (10)拼接设置 (11)画质调整 (13)信号切换 (13)功能设置 (14)菜单语言 (14)信号连接 (15)快速操作 (16)常见问题 (19)电气参数处理器输入输出接口及性能指标：菜单操作信号连接本机可内置两张发送卡，单台驱动2304*1152像素点LED屏显示；输入最多支持8路模拟、数字信号输入。

卡的安装问题处理方式 LED 显示屏不亮检查电源是否正确连接，及电源开关是否打开DVI 输出无图像检查输入通道是否有图像输入，并正确显示；检查画中画是否打开，示；检查输出设置是否正常，图像窗口是否移除检查 DVI DVI 输出图像不正常查 DVI 接口及双画面显示异常检查 CH2 置是否正常；淡入淡出异常拼接异常检查处理器是否正确连接；检查处理器参数设置是否正确；检查输入信号源是否正常；显示异常检查处理器是否正确连接；检查处理器参数设置是否正确；检查输入信号源是否正常；请按照以上步骤初步排查问题，如无法排除问题，请及时联系当地经销商或本公司客服。

CD2399音频混响电路中文说明书

邮编：214072
电话：0510-85572708
传真：0510-85887721
深圳办事处：广东省深圳市红荔西路香荔花园 12 栋 26F
邮编：518000
电话：0755-88370507
传真：0755-88370507
江苏省无锡市蠡园经济开发区滴翠路 100 号 9 栋 2 层
http://www.i-core. cn
邮编：214072
第1页共9页版本：2012-01-B1
表 733-11-I
无锡中微爱芯电子有限公司
Wuxi I-CORE Electronics Co., Ltd.
编号：CD2399-AX-BJ-31
4. 1、应用线路 1 CD2399 回音应用电路图
+5V
1
+
47uF
2
+
0.1uF 100uF
3
4
20K
R
5
6
7
0.1uF
8
0.1uF
3900pF 15K 10K
16
+
560pF
15
10K
4.7uF
14
13
12
11
0.082uF
10
5.6K 10uF 0.01uF 50K
15K 560pF
10K
+
7、联系方式：
无锡中微爱芯电子有限公司 Wuxi I-CORE Electronics Co., Ltd.
地址：江苏省无锡市蠡园开发区滴翠路 100 号 9 栋 2 层网址：
邮编：214072
电话：0510-81888895
传真：0510-85572700