BY252P中文资料
2502P资料
Drain–Source Diode Characteristics and Maximum Ratings
Diode Reverse Recovery Time Diode Reverse Recovery Charge
Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = –0.83 A Voltage
2.2 2 1.8 1.6 1.4 1.2 1 0.8
VGS = - 2.0V
-ID, DRAIN CURRENT (A)
-2.5V -3.0V -3.5V -4.0V -4.5V
10
-2.0V
0 0 1 2 3 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) 5
0
10 20 -ID, DRAIN CURRENT (A)
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a) (Note 1b)
125 208
°C/W
Package Marking and Ordering Information
Device Marking 2502P
2526中文资料
C T F AC TO RYData Sheet27447.2*2526 AND2536USB DUAL POWER CONTROL SWITCHESThe A2526EL/M and A2536EL/M are integrated high-side dualpower switches, optimized for self-powered and bus-powered Univer-sal Serial Bus (USB) applications. Few external components arenecessary to satisfy USB requirements. The A2526EL/EM ENABLEinputs are active high; the A2536EL/EM are active low.All devices are ideally suited for USB applications. Each switchchannel supplies up to 500 mA as required by USB peripheral devices.In addition, the switch’s low on-resistance permits achieving the USBvoltage-drop requirements. Fault current is limited to typically750 mA, satisfying the UL 25 VA safety requirements, and a flagoutput is available to indicate a fault condition to the local USBcontroller. Momentary voltage drops that may occur on the upstreamport when the switch is enabled in bus-powered applications is elimi-nated by a “soft start” feature.Additional features include thermal shutdown to prevent catastrophicswitch failure from high-current loads, undervoltage lockout to ensurethat the device remains OFF unless there is a valid input voltagepresent, and 3.3 V and 5 V logic-compatible enable inputs.These switches are provided in 8-pin mini-DIP (suffix ‘M’) and8-lead SOIC (suffix ‘L’) packages.FeaturesI 2.7 V to 5.8 V InputI Up to 500 mA Continuous Load Current per PortI140 mΩ Maximum ON-ResistanceI 1.25 A Maximum Short-Circuit Current LimitI Individual Open-Drain Fault Flag OutputsI125 µA Typical ON-State Supply CurrentI<1 µA Typical OFF-State Supply CurrentI Outputs Can be Forced Higher Than Input (off-state)I Thermal ShutdownI 2.2 V Typical Undervoltage LockoutI0.6 ms Turn On (soft-start) and Fast Turn OffI A2526 (active-high) Improved Replacement for MIC2526-1I A2536 (active-low) Improved Replacement for MIC2526-2ApplicationsI USB Hosts and Self-Powered HubsI USB Bus-Powered HubsI Hot Plug-In Power SuppliesI Battery-Charger Circuits115 Northeast Cutoff, Box 15036Worcester, Massachusetts 01615-0036 (508) 853-******** AND 2536USBDUAL POWER CONTROL SWITCHES2FUNCTIONAL BLOCK DIAGRAMCopyright © 2000, Allegro MicroSystems, Inc.OUT A IN GND OUT BDwg. PP-070-3A2536EMNote that the A2536EM (DIP) and theA2536EL (SOIC) are electrically identical andshare a common terminal number assignment.5075100125150A L L O W AB L E P AC K A G E P O W E RD I S S I P A T I O N I N W A T T SAMBIENT TEMPERATURE IN °C25Dwg. GP-009-2Dwg. FP-049-1OUT B FLG B EN BGNDAAEN A2526 AND 2536USBDUAL POWER CONTROLSWITCHES3Electrical Characteristics at T A = 25°C, V IN = 5 V, each output tested separately (unless otherwise noted).LimitsParameterTest Conditions Min Typ Max Units Operating Voltage Range V IN2.7– 5.8V Switch ResistanceV IN = 5 V, I OUT = 500 mA –100140m ΩV IN = 3.3 V, I OUT = 500 mA–100140m ΩOutput Leakage Current Each output (output disabled), V IN = 5 V, V OUT = 0–<1.010µA Maximum Load Current Each output500––mA Short-Circuit Current Limit Each output (enabled into load), V OUT = 4 V 0.50.75 1.25A Current-Limit Threshold Ramped load applied to enabled output, V OUT ≤ 4 V –0.9–A ENABLE Input ThresholdLow-to-high transition – 2.1 2.4V High-to-low transition0.8 1.9–V ENABLE Input Hysteresis –0.2–V ENABLE Input Current V EN = 0 V to 5.5 V–±0.01±1.0µA ENABLE Input Cap.– 1.0–pF Output Turn-On Delay R L = 10 Ω, C L = 1 µF, 50% V ENABLE to 10% V OUT –0.5–ms Output Turn-On Rise Time R L = 10 Ω, C L = 1 µF, 10% V OUT to 90% V OUT –0.6–ms Output Turn-Off Delay R L = 10 Ω, C L = 1 µF, 50% V ENABLE to 90% V OUT –10–µs Output Turn-Off Fall Time R L = 10 Ω, C L = 1 µF, 90% V OUT to 10% V OUT –25–µs Error Flag Output V IN = 5 V, I L = 10 mA –8.0–ΩResistanceV IN = 3.3 V, I L = 10 mA –10–ΩError Flag Off Current V FLG = 5 V–0.01–µA Supply CurrentBoth switches disabled (see note), OUT = open –0.2 5.0µA Both switches enabled (see note), OUT = open–125160µA UVLO ThresholdIncreasing V IN – 2.35–V Decreasing V IN– 2.2–V Over-Temperature Increasing T J –165–°C Shutdown ThresholdDecreasing T J –155–°CNote — Disabled is ≤ 0.8 V and enabled is ≥ 2.4 V (active high) for the A2526EL/EM. Disabled is ≥ 0.8V IN and enabled is ≤ 0.8 V (active low) for the A2536EL/EM.115 Northeast Cutoff, Box 15036Worcester, Massachusetts 01615-0036 (508) 853-50002526 AND 2536USBDUAL POWER CONTROL SWITCHES4FUNCTIONAL DESCRIPTIONPower switchThe power switch is an N-channel MOSFET with a maximum on-state resistance of 140 m Ω (V IN = 5 V). Configured as a high-side switch, the power switch prevents current flow in either direction if disabled. The drain body diode is discon-nected from the source when the switch is OFF allowing the output voltage to exceed the input voltage without causing current conduction. The power switch supplies a minimum of 500 mA per switch.Charge pumpAn internal charge pump supplies power to the driver circuit and provides the necessary voltage to pull the gate of the MOSFET above the source. The charge pump operates from input voltages as low as 2.7 V. The charge pump is limited to 2.5 µA to establish a controlled turn on time of typically 1 ms.DriverThe driver controls the gate voltage of the power switch. To limit large current surges and reduce the associated electromag-netic interference (EMI) produced, the driver incorporatescircuitry that controls the rise times and fall times of the output voltage. The rise time is typically 1 ms.ENABLE (EN or EN)The logic enable disables the power switch and the bias for the charge pump, driver, and other circuitry to reduce the supply current to less than 5 µA maximum when a logic high is present on EN (A2526) or a logic low is present (A2536). The proper logic level restores bias to the drive and control circuits and turns the power ON. The enable input is a compatible with both TTL and CMOS logic levels.Fault Flag (FLG)This open drain output is asserted (active low) when anovercurrent or over temperature condition is encountered. The output will remain asserted until the overcurrent or over temperature condition is removed.Current senseA sense FET monitors the current supplied to the load. The sense FET measures current more efficiently than conventional resistance methods. When an overload or short circuit isencountered, the current-sense circuitry sends a control signal to the driver. The driver in turn reduces the gate voltage anddrives the power FET into its saturation region, which switches the output into a constant-current mode and holds the current constant while varying the voltage on the load.Thermal senseAn internal thermal-sense circuit shuts off the power switch when the junction temperature rises to approximately 165°C.Hysteresis is built into the thermal sense circuit. After the device has cooled approximately 10°C, the switch turns back ON. The switch continues to cycle off and on until the fault is removed.Undervoltage lockoutA voltage-sense circuit monitors the input voltage. When the input voltage is approximately 2 V, a control signal turns OFF the power switch.2526 AND 2536USBDUAL POWER CONTROLSWITCHES5V OUT 1 V/V ENABLE 200 µs/V OUT 1 V/V ENABLE50 µs/NO-LOAD SWITCHING PERFORMANCEV OUT 1 V/V ENABLE50 µs/115 Northeast Cutoff, Box 15036Worcester, Massachusetts 01615-0036 (508) 853-50002526 AND 2536USBDUAL POWER CONTROL SWITCHES6CAPACITIVE-LOAD SWITCHING PERFORMANCEI OUT500 mA/V ENABLEV FAULTV OUT 2 V/1 ms/ C L = 1000 µF R L = 12 ΩCURRENT LIMITINGI OUT500 mA/V ENABLEV FAULT V OUT 2 V/1 ms/ C L = 50 µF R L = 100 ΩI OUT500 mA/V ENABLEV FAULTV OUT 2 V/1 ms/ C L = 100 µF R L = 100 Ω2526 AND 2536USBDUAL POWER CONTROLSWITCHES7I OUT400 mA/V FAULT500 ms/15 m ΩSHORT CIRCUITTHERMAL SHUTDOWNI OUT 1 A/V FAULT500 ms/ R L = 15 m ΩTHERMAL SHUTDOWNI OUT 4 A/V FAULTV OUT5 ms/ 15 m ΩSHORT CIRCUITI OUT 4 A/V FAULTV OUT2 µs/15 m ΩSHORT CIRCUITOUTPUT SHORT-CIRCUIT PERFORMANCE115 Northeast Cutoff, Box 15036Worcester, Massachusetts 01615-0036 (508) 853-50002526 AND 2536USBDUAL POWER CONTROL SWITCHES8OvercurrentA sense FET is employed for overcurrent conditions. Unlike current-sense resistors, sense FETs do not increase the series resistance of the current path. When an overcurrent condition is detected, the device maintains a constant output current and reduces the output voltage accordingly. Complete shutdown occurs only if the fault is present long enough to activate thermal limiting.Three possible overload conditions can occur. In the first condition, the output has been shorted before the device is enabled or between V IN has been applied. The device senses the short and immediately switches into a constant-current output.In the second condition, the short occurs while the device is enabled. At the instant the short occurs, very high currents may flow for a short time before the current-limit circuit can react .After the current-limit circuit has tripped (reached theovercurrent trip threshold) the device switches into constant-current mode.In the third condition, the load has been gradually increased beyond the recommended operating current. The current is permitted to rise until the current-limit threshold is reached or until the thermal limit of the device is exceeded. The device is capable of delivering current up to the current-limit threshold without damage. Once the threshold has been reached, the device switches into its constant-current mode.Fault Flag (FLG)The FLG open-drain output is asserted (active low) when an overcurrent or over-temperature condition is encountered. The output will remain asserted until the overcurrent or over-temperature condition is removed. Connecting a heavycapacitive load to an enabled device can cause momentary false over-current reporting from the inrush current flowing through the device, charging the downstream capacitor. An RC filter can be connected to the terminal to reduce false overcurrent reporting. Using low-ESR electrolytic capacitors on the output lowers the inrush current flow through the device during hot-plug events by providing a low impedance energy source,thereby reducing erroneous overcurrent reporting.Power dissipation and junction temperatureThe low on-resistance of the n-channel MOSFET allows small surface-mount packages, such as an SOIC, to pass large currents. The thermal resistance of these packages are highcompared to those of power packages; it is good design practice to check power dissipation and junction temperature. The first step is to find r DS(on) at the input voltage and operating tempera-ture. Next, calculate the power dissipation using:P D = r DS(on) x I 2Finally, calculate the junction temperature:T J = P D x R θJA + T A where:T A = ambient temperature °CR θJA = thermal resistance (SOIC = 108°C/W, DIP = 60°C/W ).Thermal protectionThermal protection prevents damage to the IC when heavy-overload or short-circuit faults are present for extended periods of time. The faults force these devices into constant-current mode, which causes the voltage across the high-side switch to increase; under short-circuit conditions, the voltage across the switch is equal to the input voltage. The increased dissipation causes the junction temperature to rise to high levels. The protection circuit senses the junction temperature of the switch and shuts it OFF. Hysteresis is built into the thermal sense circuit, and after the device has cooled approximately 20°, the switch turns back ON. The switch continues to cycle in this manner until the load fault or input power is removed.Undervoltage lock-out (UVLO)An undervoltage lockout ensures that the power switch is in the OFF state at power up. Whenever the input voltage falls below approximately 2 V, the power switch will be quickly turned OFF. This facilitates the design of hot-insertion systems where it is not possible to turn OFF the power switch before input power is removed. The UVLO will also keep the switch from being turned ON until the power supply has reached at least 2 V, even if the switch is enabled. Upon reinsertion, the power switch will be turned ON, with a controlled rise time to reduce EMI and voltage overshoots.Power supply considerationsA 0.1 µF ceramic bypass capacitor between IN and GND, close to the device, is recommended. Placing a high-value electro-lytic capacitor on the output terminals is also desirable when the output load is heavy. The capacitor reduces power supplytransients that may cause ringing on the input. Also, bypassing the output with a 0.01 µF to 0.1 µF ceramic capacitor improves the immunity of the device to short-circuit transients.APPLICATIONS INFORMATION2526 AND 2536USBDUAL POWER CONTROLSWITCHES9TYPICAL APPLICATIONSVIN ON/OFF A OVER-CURRENT AGROUNDUSB CONTROLLERON/OFF BOVER-BDwg. EP-070-11A3.3 V REGUSB Host ApplicationUSB Bus-Powered HubVIN ON/OFF A OVER-CURRENT AGROUND5 VUSB CONTROLLERUSB ON/OFF BOVER-BDwg. EP-070-1A3.3 V115 Northeast Cutoff, Box 15036Worcester, Massachusetts 01615-0036 (508) 853-50002526 AND 2536USBDUAL POWER CONTROL SWITCHES10A2526EL and A2536ELDimensions in Inches (for reference only)Dimensions in Millimeters (controlling dimensions)Dwg. MA-007-8 inBSCDwg. MA-007-8 mmNOTES:1.Lead spacing tolerance is non-cumulative.2.Exact body and lead configuration at vendor’s option within limits shown.2526 AND 2536USBDUAL POWER CONTROLSWITCHES11NOTES:1.Leads 1, 4, 5, and 8 may be half leads at vendor’s option.2.Lead thickness is measured at seating plane or below.3.Lead spacing tolerance is non-cumulative.4.Exact body and lead configuration at vendor’s option within limits shown.Dwg. MA-001-8A mmA2526EM and A2536EMDimensions in Inches (controlling dimensions)Dimensions in Millimeters (for reference only)115 Northeast Cutoff, Box 15036Worcester, Massachusetts 01615-0036 (508) 853-50002526 AND 2536USBDUAL POWER CONTROL SWITCHES12The products described here are manufactured under one or more U.S. patents or U.S. patents pending.Allegro MicroSystems, Inc. reserves the right to make, from time to time, such departures from the detail specifications as may berequired to permit improvements in the performance, reliability, or manufacturability of its products. Before placing an order, the user is cautioned to verify that the information being relied upon is current.Allegro products are not authorized for use as critical components in life-support devices or systems without express written approval.The information included herein is believed to be accurate and reliable. However, Allegro MicroSystems, Inc. assumes no responsi-bility for its use; nor for any infringement of patents or other rights of third parties which may result from its use.。
BYM26中文资料
BYM26A to C
BYM26D and E
BYM26F and G
CONDITIONS IF = 2 A; Tj = Tj max; see Figs 14 and 15
IF = 2 A; see Figs 14 and 15
IR = 0.1 mA
VR = VRRMmax; see Fig.16 VR = VRRMmax; Tj = 165 °C; see Fig.16 when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.20
current
IF = 1 A to VR ≥ 30 V and
BYM26A to C
dIF/dt = −1 A/µs;
see Fig.21
BYM26D and E
BYM26F and G
MIN.
− − −
− − −
TYP. MAX. UNIT
85
− pF
75
− pF
65
− pF
−
7 A/µs
−
6 A/µs
1996 May 24
4
元器件交易网
Philips Semiconductors
Fast soft-recovery controlled avalanche rectifiers
GRAPHICAL DATA
2.4 handbook, halfpage
I F(AV) (A)
Fig.3 Maximum average forward current as a function of tie-point temperature (including losses due to reverse leakage).
BY253GP资料
BY251GP thru BY255GPVishay Semiconductorsformerly General Semiconductor Document Number Reverse Voltage200 to 1300VForward Current 3.0ANew ProductP a t en t e d*Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Parameter Symbol BY251GP BY252GP BY253GP BY254GP BY255GP Unit Maximum repetitive peak reverse voltage V RRM2004006008001300V Maximum RMS voltage V RMS140280420560910V Maximum DC blocking voltage V DC2004006008001300V Maximum average forward rectified current10mm lead length at T A = 55°CI F(AV) 3.0APeak forward surge current 10ms single half sine-waveI FSM100A superimposed on rated load (JEDEC Method)Maximum full load reverse current, full cycle average10mm lead length at T A = 55°CI R(AV)100µAT ypical thermal resistance(1)RΘJA20RΘJL10°C/W Operating junction and storage temperature range T J, T STG–65 to +175°C Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.Maximum instantaneous forward voltage at 3.0A V F 1.1VMaximum reverse currentI R 5.0µAat rated DC blocking voltage T A = 25°CTypical reverse recovery timeI F = 0.5A, I R = 1.0V, I rr = 0.25At rr 3.0µs Typical junction capacitance at 4.0V, 1MHz C J40pF Note: (1) Thermal resistance from junction to ambient and from junction to lead at 0.375”(9.5mm) lead length, P.C.B.mountedFeatures• Plastic package has Underwriters LaboratoriesFlammability Classification 94V-0• High temperature metallurgically bonded construction• Cavity-free glass passivated junction• Capable of meeting environmental standards of MIL-S-19500• 3.0 Ampere operation at T A=55°C with no thermal runaway• Typical I R less than 0.1µA• High temperature soldering guaranteed:350°C/10 seconds,0.375" (9.5mm) lead length, 5 lbs.(2.3kg) tensionMechanical DataCase:JEDEC DO-201AD, molded plastic over glass bodyTerminals:Plated axial leads, solderable perMIL-STD-750, Method 2026Polarity:Color band denotes cathode endMounting Position:AnyWeight:0.04 oz., 1.12 gPackaging Codes/Options:1/Bulk – 1.5K per container, 15K/box4/1.4K per 13”reel, 5.6K/box23/1K per ammo mag., 9K/box*Glass-plastic encapsulation technique is covered byPatent No. 3,996,602 and brazed-lead assembly by Patent No. 3,930,306BY251GP thru BY255GPVishay Semiconductorsformerly General Semiconductor Document Number 88541Ratings andCharacteristic Curves (T A = 25°C unless otherwise noted)02550751001251501751.02.03.04.0110100101002000.60.70.80.9 1.0 1.11.2 1.31010010.111010010100204060801000.010.1110Fig 1 - Forward Current Derating CurveA v e r a g e F o r w a r d R e c t i f i e d C u r r e n t (A )P e a k F o r w a r d S u r g e C u r r e n t (A )I n s t a n t a n e o u s R e v e r s e L e a k a g e C u r r e n t (A )Fig 3 - Typical Instantaneous ForwardCharacteristicsFig 2 - Maximum Non-repetitive PeakForward Surge CurrentFig 2 - Maximum Non-repetitive PeakForward Surge CurrentFig 5 - Typical Junction CapacitanceI n s t a n t a n e o u s F o r w a r d C u r r e n t (A )J u n c t i o n C a p a c i t a n c e (p F )Ambient Temperature, ¡CNumber of Cycles at 60HzPercent of Rated Peak Reverse Voltage (%)Instantaneous Forward Voltage (V)Reverse Voltage (V)。
SMD22PL-TP;SMD24PL-TP;SMD26PL-TP;中文规格书,Datasheet资料
--- 0.70 --- 0.85
Units V
IR
Maximum DC Reverse Current
---
--- 0.5 mA
Cj
Typical--Junction--Capacitance
@f=1.0MHz,Vr=4V
--- 210 ---
pF
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7. 2. Thermal Resistance:PC Board Mounted on 0.2*0.2''(5*5mm) copper pad area.
SMD22PL THRU
SMD210PL
Schottky Barrier Diodes
20 to 100 Volts
SOD-123FL
A B
C
E
H D
G
DIMENSIONS
DIM
INCHES
MM
பைடு நூலகம்
NOTE
MIN MAX MIN MAX
A .140 .152 3.55 3.85 B .100 .122 2.55 3.10 C .055 .075 1.40 1.90
Typical Thermal Resistance(Note2)
Power Dissipation Junction Temperature Storage Temperature
50
60 30 21 1.68 -65 to +125 -65 to +125
A
OC/W OC/W OC/W
BY252中文资料
DC COMPONENTS CO., LTD.
R
115
NEXT EXIT BACK NEXT EXI BACK EXIT NEXT BACK
SYMBOL Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current .375*(9.5mm) lead length at T L = 105oC Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum Instantaneous Forward Voltage at 3.0A DC Maximum DC Reverse Current @T A = 25 oC at Rated DC Blocking Voltage @T A = 100 o C Maximum Full Load Reverse Current Average, Full Cycle .375*(9.5mm) lead length at T L = 75oC Typical Junction Capacitance (Note) Typical Thermal Resistance Operating and Storage Temperature Range NOTES : Measured at 1 MHZ and applied reverse voltage of 4.0 volts VRRM VRMS VDC IO I FSM VF
SR255中文资料
VOLTAGE RANGE 20 to 100 Volts SR252 THRU SR2510CURRENT2.5 AmpereFEATURES• Fast switching• Low forward voltage• Low power loss for high efficiency • High surge capacity•High temperature soldering guaranteed250℃/10 seconds,0.373″(9.5mm) lead lengthMECHANICAL DATA• Case: Transfer molded plastic• Epoxy: UL94V-0 rate flame retardant • Lead: solderable per MIL-STD-202E method 208C• Polarity: Color band denotes cathode end • Mounting position: Any•Weight: 0.014ounce, 0.39 gramMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS• Ratings at 25℃ ambient temperature unless otherwise specified • Single Phase, half wave, 60Hz, resistive or inductive load •For capacitive load derate current by 20% SYMBOLS SR252 SR253 SR254 SR255 SR256 SR258 SR2510 UNIT Maximum Repetitive Peak Reverse Voltage V RRM 20 30 40 50 60 80 100 Volts Maximum RMS Voltage V RMS 14 21 28 35 42 56 70 Volts Maximum DC Blocking Voltage V DC 20 30 40 50 60 80 100 VoltsMaximum Average Forward Rectified Current 0.375”(9.5mm)Lead length,(Note 1) T L =100℃I (AV) 2.5 Amps Peak Forward Surge Current8.3ms single half sine-wave superimposed on rated load (JEDEC method)I FSM 70 Amps Maximum Instantaneous Forward Voltage @ 2.5A V F 0.550.70 0.85Volts T A = 25℃ 0.5 Maximum DC Reverse Current at rated DC blocking voltage per element(NOTE 1)T A = 100℃ I R 10 mA Typical Junction Capacitance (NOTE 3) C j200 pF Typical Thermal Resistance (NOTE 2) R θJA 20℃/WOperating Junction Temperature Range T J (-55 to +150) ℃Storage Temperature RangeT STG(-55 to +150)℃Notes:1.Pulse test:300μs pulse width,1% duty cycle2.thermal resistance from junction to ambient P.C.B .mounted with 0.375”(9.5mm) lead length with 1.5”×1.5”(38×38mm) Copper pads3. Measured at 1.0MHz and applied reverse voltage of4.0 VoltsVOLTAGE RANGE 20 to 100 Volts SR252 THRU SR2510CURRENT 2.5 Ampere RATING AND CHRACTERISTIC CURVES SR252 THRU SR2510FIG.2-MAXIMUM NON-REPETITIVE PEAKCURRENT,(A)PEAKFORWARDSURGENUMBER OF CYCLES AT 60 HzFIG.4-TYPICAL REVERSE DERATING CURVEFIG.1-TYPICAL FORWARD CURRENTAVERAGEFORWARDCURRENT,(A)FIG.3-TYPICAL INSTANTANEOUSFORWARD CHARACTERISTICSAMBIENT TEMPERATURE, (°C)(mA)INSTANTANEOUS FORWARD VOLTAGE,(V)FIG.5-TYPICAL JUNCTION CAPACITANCEREVERSE VOLTAGE,(V)JUNCTIONCAPACITANCE,(pF)INSTANTANEOUSFORWARDCURRENT,INSTANTANEOUSREVERSECURRENT,PERCENT OF RATED PEAKREVERSE VOLTAGE,(%)。
SPD30P06P中文资料
Symbol
Values
Unit
min. typ. max.
IS
-
-
-30 A
ISM
-
- -120
VSD
- -1.3 -1.7 V
trr
- 64.6 97 ns
Qrr
- 153 230 nC
Page 4
1999-11-22
元器件交易网
Ptot ID
Preliminary data
RDS(on) = f (ID)
parameter: VGS
SPD30P06P
0.26
W
c
0.22
d
e
f
g
h
i
0.20
0.18
0.16
0.14
0.12
0.10
j
0.08
k
0.06
0.04 0.02
VGS [V] =
c def -5.0 -5.5 -6.0 -6.5
ghi j k -7.0 -7.5 -8.0 -9.0 -10.0
0.00 0
-10 -20 -30 -40 A
-60
ID
Typ. transfer characteristics ID= f ( VGS )
³ VDS 2 x ID x RDS(on)max
parameter: tp = 80 µs
-60
Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: gfs
ID
TC = 25 °C
TC = 100 °C
Pulsed drain current
BYT52系列二极管资料
v
CD – Diode Capacitance ( pF )
Tj = 25°C 16
12
8
4 0
40
80
120
160
200
94 9451
0.1
1
10
100
Tamb – Ambient Temperature ( °C )
VR – Reverse Voltage ( V )
Figure 3. Max. Average Forward Current vs. Ambient Temperaturttering Limit
0.1
0.01 120 160 200
94 9449
0
0.6
1.2
1.8
2.4
3.0
94 9447
Tamb – Ambient Temperature ( °C )
VF – Forward Voltage ( V )
Figure 2. Max. Average Forward Current vs. Ambient Temperature
tp=10ms, half sinewave on PC board l=10mm, TL=25°C
Maximum Thermal Resistance
Test Conditions l=10mm, TL=constant on PC board with spacing 25mm Symbol RthJA RthJA Value 45 100 Unit K/W K/W
∅ 3.6 max. Sintered Glass Case SOD 57 Weight max. 0.5 g Cathode Identification
AQV252GAX;中文规格书,Datasheet资料
Panasonic Corporation Automation Controls Business Unit /ac/eASCTB144E 201201-TTYPES*Indicate the peak AC and DC values.Note:The surface mount terminal indicator “A” and the packing style indicator “X” or “Z” are not marked on the device.RATINGmm inchFEATURES1. Greatly increased load current in a compact DIP packageContinuous load current: 3.5A (AQV251G)2. Greatly improved specifications allow you to use this in place of mercury and mechanical relays.3. Low on-resistance (typ. 35m Ω, AQV251G)TYPICAL APPLICATIONS• Measuring instrument market (T esters etc.)• Industrial machinery and equipment • Power supply controls• Security/Disaster prevention market I/O sections of warning devices, security systems, etc.RoHS compliantHeight includes standoff1. Absolute maximum ratings (Ambient temperature: 25°C 77°F )ItemSymbol T ype of connectionAQV251G(A)AQV252G(A)RemarksInputLED forward current I F 50 mA LED reverse voltage V R 5 V Peak forward current I FP 1 A f = 100 Hz, Duty factor = 0.1%Power dissipationP in 75 mWOutputLoad voltage (peak AC)V L30 V 60 V Continuous load current I L A3.5 A 2.5 A A connection: Peak AC, DC B, C connection: DC B4.0 A 3.5 A C 6.0 A5.0 A Peak load current I peak6.0 A 100ms (1 shot), V L = DCPower dissipationP out 500 mW T otal power dissipation P T 550 mW I/O isolation voltage V iso 1,500 V ACT emperature limitsOperating T opr –40°C to +85°C –40°F to +185°F Non-condensing at low temperaturesStorageT stg–40°C to +100°C –40°F to +212°F/Panasonic Corporation Automation Controls Business Unit /ac/e HE 1 Form A High CapacityASCTB144E 201201-T■ For Dimensions.■ For Schematic and Wiring Diagrams.■ For Cautions for Use.■ These products are not designed for automotive use.If you are considering to use these products for automotive applications, please contact your local Panasonic Corporation technical representative.For more information.REFERENCE DATA1.-(1) Load current vs. ambient temperature characteristicsT ested sample: AQV251G;Allowable ambient temperature:–40°C to +85°C–40°F to +185°F1.-(2) Load current vs. ambient temperature characteristicsT ested sample: AQV252G;Allowable ambient temperature:–40°C to +85°C–40°F to +185°F2. On resistance vs. ambient temperature characteristicsMeasured portion: between terminals 4 and 6;LED current: 5 mA; Load voltage: Max. (DC)Continuous load current: Max.(DC)Ambient temperature, °C86420L o a d c u r r e n t , A6824Ambient temperature, °CL o a d c u r r e n t , AAmbient temperature, °CO n r e s i s t a n c e , Ω/Panasonic Corporation Automation Controls Business Unit /ac/eHE 1 Form A High CapacityASCTB144E 201201-T3. T urn on time vs. ambient temperature characteristicsT ested sample: All; LED current: 5 mA; Load voltage: 10 V (DC); Continuous load current: 100 mA (DC)4. T urn off time vs. ambient temperature characteristicsLED current: 5 mA; Load voltage: 10 V (DC);Continuous load current: 100 mA (DC)5. LED operate current vs. ambient temperature characteristicsT ested sample: All; Load voltage: 10 V (DC);Continuous load current: 100mA (DC)2Ambient temperature, °CT u r n on t i m e , m s–40–20502040608013485Ambient temperature, °CT u r n o f f t i m e , m s23Ambient temperature, °CL E D o p e r a t e c u r r e n t , m A–40–20502040608085146. LED turn off current vs. ambient temperature characteristicsT ested sample: All; Load voltage: 10 V (DC);Continuous load current: 100mA (DC)7. LED dropout voltage vs. ambient temperature characteristicsT ested sample: All;LED current: 5 to 50 mA8. Current vs. voltage characteristics of output at MOS portionMeasured portion: between terminals 4 and 6;Ambient temperature: 25°C 77°F23Ambient temperature, °CL E D t u r n o f f c u r r e n t , m A–40–20020*********85Ambient temperature, °CL E D d r o p o u t v o l t a g e , V9. Off state leakage current vs. load voltage characteristicsMeasured portion: between terminals 4 and 6;Ambient temperature: 25°C 77°F10. T urn on time vs. LED forward current characteristicsMeasured portion: between terminals 4 and 6;T ested sample: All; Load voltage: 10 V (DC);Continuous load current: 100 mA (DC);Ambient temperature: 25°C 77°F11. T urn off time vs. LED forward current characteristicsMeasured portion: between terminals 4 and 6;Load voltage: 10 V (DC);Continuous load current: 100 mA (DC);Ambient temperature: 25°C 77°FLoad voltage, VO f f s t a t e l e a k a g e c u r r e n t , A10-410-610-8101001235LED forward current, mAT u r n o n t i m e , m s102030405040LED forward current, mAT u r n o f f t i m e , m s12. Output capacitance vs. applied voltage characteristicsMeasured portion: between terminals 4 and 6;Frequency: 1 MHz; Ambient temperature: 25°C 77°F13. Max. switching frequencyT ested sample: AQV251G;LED current: 5 mA;Ambient temperature: 25°C 77°FApplied voltage, VO u t p u t c a p a c i t a n c e , p FM a x . s w i t c h i n g f r e q u e n c y , t i m e /sLoad voltage, V × Load current, A/分销商库存信息: PANASONICAQV252GAX。
RCLAMP0521P中文资料
Typical 9.3
Maximum 5 11
Units V V
0.025
1
µA
15
V
25
V
0.30
0.50
pF
2007 Semtech Corp.
2
元器件交易网
RClamp0521P
Clamping Voltage - VC (V)
PROTECTION PRODUCTS Typical Characteristics
Mechanical Characteristics
SLP1006P2 package Molding compound flammability rating: UL 94V-0 Marking: Marking code Packaging : Tape and Reel Lead Finish: NiPdAu RoHS/WEEE Compliant
90 80 70 60 50 40 30 20 10
0 0
Power Derating Curve
25
50
75
100
125
150
Ambient Temperature - TA (oC)
Clamping Voltage vs. Peak Pulse Current
24 22 20 18 16 14 12 10
10 MHz
100 MHz
13 GHz GHz
START. 030 MHz
STOP 3000.000000 MHz
3
元器件交易网
PROTECTION PRODUCTS Applications Information
常用二极管型号及参数大全
常用二极管型号及参数大全1.塑封整流二极管序号型号IF VRRM VF Trr 外形A V V μs1 1A1-1A7 1A 50-1000V 1.1 R-12 1N4001-1N4007 1A 50-1000V 1.1 DO-413 1N5391-1N5399 1.5A 50-1000V 1.1 DO-154 2A01-2A07 2A 50-1000V 1.0 DO-155 1N5400-1N5408 3A 50-1000V 0.95 DO-201AD6 6A05-6A10 6A 50-1000V 0.95 R-67 TS750-TS758 6A 50-800V 1.25 R-68 RL10-RL60 1A-6A 50-1000V 1.09 2CZ81-2CZ87 0.05A-3A 50-1000V 1.0 DO-4110 2CP21-2CP29 0.3A 100-1000V 1.0 DO-4111 2DZ14-2DZ15 0.5A-1A 200-1000V 1.0 DO-4112 2DP3-2DP5 0.3A-1A 200-1000V 1.0DO-4113 BYW27 1A 200-1300V 1.0 DO-4114 DR202-DR210 2A 200-1000V 1.0 DO-1515 BY251-BY254 3A 200-800V 1.1 DO-201AD16 BY550-200～1000 5A 200-1000V 1.1 R-517 PX10A02-PX10A13 10A 200-1300V 1.1 PX18 PX12A02-PX12A13 12A 200-1300V 1.1 PX19 PX15A02-PX15A13 15A 200-1300V 1.1 PX20 ERA15-02～13 1A 200-1300V 1.0 R-121 ERB12-02～13 1A 200-1300V 1.0 DO-1522 ERC05-02～13 1.2A 200-1300V 1.0 DO-1523 ERC04-02～13 1.5A 200-1300V 1.0 DO-1524 ERD03-02～13 3A 200-1300V 1.0 DO-201AD25 EM1-EM2 1A-1.2A 200-1000V 0.97 DO-1526 RM1Z-RM1C 1A 200-1000V 0.95 DO-1527 RM2Z-RM2C 1.2A 200-1000V 0.95 DO-1528 RM11Z-RM11C 1.5A 200-1000V 0.95 DO-1529 RM3Z-RM3C 2.5A 200-1000V 0.97 DO-201AD30 RM4Z-RM4C 3A 200-1000V 0.97 DO-201AD2.快恢复塑封整流二极管序号型号IF VRRM VF Trr 外形A V V μs（1）快恢复塑封整流二极管1 1F1-1F7 1A 50-1000V 1.3 0.15-0.5 R-12 FR10-FR60 1A-6A 50-1000V 1.3 0.15-0.53 1N4933-1N4937 1A 50-600V 1.2 0.2 DO-414 1N4942-1N4948 1A 200-1000V 1.3 0.15-0.5 DO-415 BA157-BA159 1A 400-1000V 1.3 0.15-0.25 DO-416 MR850-MR858 3A 100-800V 1.3 0.2 DO-201AD7 EU1-EU2 0.25A-1A 100-1000V 1.3 0.4 DO-418 20DF1-20DF10 2A 100-1000V 1.3 0.2 DO-159 30DF1-30DF10 3A 100-1000V 1.3 0.2 DO-201AD10 RU1-RU4 0.25A-3A 100-1000V 1.3 0.411 ERA22-02～10 0.5A 200-1000V 1.3 0.4 R-112 ERA18-02～10 0.8A 200-1000V 1.3 0.4 R-113 ERB43-02～10 0.5A 200-1000V 1.3 0.4 DO-4114 ERB44-02～10 1A 200-1000V 1.3 0.4 DO-1515 ERC18-02～10 1.2A 200-1000V 1.3 0.4 DO-1516 ERD28-02～10 1.5A 200-1000V 1.3 0.4 DO-201AD17 ERD29-02～10 2.5A 200-1000V 1.3 0.4 DO-201AD18 ERD32-02～10 3A 200-1000V 1.3 0.4 DO-201AD19 ERD09-13～15 3A 1300-1500V 1.5 0.6 R-5（2）SK、2CG系列快恢复整流二极管1 SK1-02～30 1.5A 200-3000V 1.3-4 0.5-1 DO-152 SK2-02～30 1A 200-3000V 1.3-4 0.5-1 DO-413 SK3-02～30 2A 200-3000V 1.3-4 0.5-1 DO-154 SK4-02～30 0.5A 300-3000V 1.3-4 0.5-1 DO-415 2CG04-2CG30 0.2A 300-3000V 1.3-40.5-1 DO-41（3）快恢复塑封阻尼二极管1 2CN1-2CN1C 1A 200-1200V 1.32 DO-412 2CN2D-2CN2M 0.5A 200-1000V 1.3 2 DO-413 2CN3D-2CN3M 1A 200-1000V 1.3 6 DO-414 2CN4D-2CN4M 1.5A 200-1000V 1.3 0.8 DO-155 2CN5D-2CN5M 1.5A 200-1000V 1.0 1 DO-156 2CN6D-2CN6M 1A 200-1000V 1.3 6 DO-417 2CN12D-2CN12M 3A 200-1000V 1.3 1 DO-201AD8 RH1Z-RH1C 0.6A 200-1000V 1.3 4 DO-419 TVR4J-TVR4N 1.2A 600-1000V 1.2 20 DO-153.超高频塑封二极管1 ERA34-10 0.1A 1000V 3 0.15 R-12 ERA32-02～10 1A 200-1000V 1.3 0.1 DO-413 ERB32-02～10 1.2A 200-1000V 1.3 0.1 DO-154 ERC30-02～10 1.5A 200-1000V 1.3 0.1 DO-155 ERC32-02～10 3A 200-1000V 1.3 0.1 DO-201AD6 EG01E-EG01C 0.5A 200-1000V 2 0.1 DO-417 EG1E-EG1C 1A 200-1000V 1.8 0.1 DO-418 RG10Z-RG10C 1.2A 200-1000V 2 0.1 DO-159 RG2Z-RG2C 1.5A 200-1000V 1.8 0.1 DO-1510 RG4Z-RG4C 3A 200-1000V 2 0.1 D0-201AD4.超快恢复塑封二极管序号型号IF VRRM VF Trr 外形A V V ns（1）超快恢复塑封二极管1 SF10-SF50 1-5A 50-1000V 0.95-1.7 352 SF80-SF160 8-16A 50-600V 0.95-1.4 35 TO-2203 EGP10-EGP50 1-5A 50-200V 1.1 354 ERC38～04-ERC38～10 1A 400-1000V 1.7 50 DO-415 RL2-RL2C 2A 400-1000V 1.7 50 DO-156 RL3-RL3C 3A 400-1000V 1.7 50 DO-201AD7 1H1-1H8 1A 50-1000V 1.1-1.7 50-75 R-18 HER10-HER60 1-6A 50-1000V 1.1-1.7 50-759 HER80-HER160 8-6A 50-1000V 1.1-1.7 50-75 TO-22010 UF10-UF60 1-6A 50-1000V 1.1-1.7 50-7511 EL1Z-EL1 1.5A 200-350V 1.3 50 DO-15（2）MUR超快恢复整流二极管1 MUR120-MUR1120 1A 200-1200V0.95-1.5 35-50 DO-412 MUR420-MUR4120 4A 200-1200V 0.95-1.6 35-75 DO-201AD3 MUR820-MUR8120 8A 200-1200V 1.3-2.1 35-75 TO-220AC4 MUR1020-MUR10120 10A 200-1200V 1.3-2.1 35-75 TO-220AC5 MUR1520-MUR15120 15A 200-1200V 1.3-2.1 35-75 TO-220AC6 MUR2020-MUR20120 20A 200-1200V 1.3-2.1 35-75 TO-220AB7 MUR3020-MUR30120 30A 200-1200V 1.3-2.1 35-75 TO-247AD8 MUR6020-MUR60120 60A 200-1200V 1.3-2.1 35-75 TO-247AD（3）RHRP、RHRG超快恢复二极管1 RHRP820-RHRP8120 8A 200-1200V2.1-3.2 35-70 TO-220AC2 RHRP1520-RHRP15120 15A 200-1200V2.1-3.2 40-75 TO-220AC3 RHRP3020-RHRP30120 30A 200-1200V 2.1-3.2 45-75 TO-220AC4 RHRG3020-RHRG30120 30A 200-1200V 2.1-3.2 45-75 TO-247AC5 RHRG5020-RHRG50120 50A 200-1200V 2.1-3.2 50-100 TO-247AC6 RHRG6020-RHRG60120 60A 200-1200V 2.1-3.2 45-75 TO-247AD（4）BYV29～79、BYT28～79超快恢复二极管1 BYW29-100～200 8A 100-200V 1.1 25 TO-220AC2 BYV29-300～500 9A 300-500V 1.25 60 TO-220AC3 BYQ28 -100～200 10A 100-200V 1.1 20 TO-220AB4 BYT28-300～500 10A 300-500V 1.4 60 TO-220AB5 BYV79-100～200 14A 100-200V 1.3 30 TO-220AC6 BYT79-300～500 14A 300-500V 1.4 60 TO-220AC7 BYV32-100～200 20A 100-200V 1.1 25 TO-220AB8 BYV34-300～500 20A 300-500V 1.1 60 TO-220AB9 BYV42-100～200 30A 100-200V 1.1 28 TO-220AB10 BYV44-300～500 30A 300-500V 1.25 60 TO-220AB5.肖特基整流二极管序号型号IF VRRM VF 外形A V V（1）肖特基塑封整流二极管1 1N5817-1N5819 1A 20-40V 0.45-0.6 DO-412 1N5820-1N5822 3A 20-40V 0.45-0.6 DO-201AD3 SRT12-SRT100 1A 20-100V 0.55-0.85 R-14 SR10-SR50 1-5A 20-100V 0.55-0.855 SB120-SB1B0 1A 20-100V 0.55-0.85 DO-416 SB220-SB2B0 2A 20-100V 0.55-0.85 DO-157 SB320-SB3B0 3A 20-100V 0.55-0.85DO-201AD8 SB520-SB5B0 5A 20-100V 0.55-0.85 D0-201AD9 ERA81-002～009 1A 20-90V 0.55-0.9 DO-4110 ERB81-002～009 2A 20-90V 0.55-0.9 DO-1511 ERC81-002～009 3A 20-90V 0.55-0.9 DO201AD12 EK03-EK09 1A 20-90V 0.55-0.81 DO-4113 EK13-EK19 1.5A 20-90V 0.55-0.81 DO-1514 EK33-EK39 2A 20-90V 0.55-0.81 DO-1515 EK43-EK49 3A 20-90V 0.55-0.81 DO-201AD（2）MBR、PBYR系列大电流肖特基整流二极管1 MBR1020-MBR1060 10A 20-60V 0.57-0.8 TO-220AC2 MBR1620-MBR1660 16A 20-60V0.57-0.8 TO-220AC3 MBR2020CT-2060CT 20A 20-60V 0.57-0.8 TO-220AB4 MBR2520CT-2560CT 25A 20-60V 0.57-0.8 TO-220AB5 MBR3020PT-3060PT 30A 20-60V 0.57-0.8 TO-247AD6 MBR4020PT-4060PT 40A 20-60V 0.57-0.8 TO-247AD7 MBR6020PT-6060PT 60A 20-60V 0.57-0.8 TO-247AD8 PBYR735-745 7A 20-45V 0.56-0.66 TO-220AC9 PBYR1020-1060 10A 20-60V 0.56-0.77 TO-220AC10 PBYR1635-1660 16A 20-60V 0.56-0.77 TO-220AC11 PBYR2020CT-2045CT 20A 20-45V 0.56-0.65 TO-220AB12 PBYR3035PT-3060PT 30A 20-60V 0.56-0.77 TO-247AD6.玻球快恢复二极管、玻钝芯片塑封二极管序号型号IF VRRM VF Trr 外形A V V ns（1）BYV、BYT、BYM、BYW玻球快恢复二极管1 BYV26A-BYV26E 1A 200-1000V 1.5 0.03 DO-204AP2 BYV12-BYV16 1.5A 100-1000V 1.5 0.3 DO-204AP3 BYV96A-BYV96E 1.5A 100-1000V 1.5 0.3 DO-204AP4 BYV27-50～200 2A 50-200V 1.1 0.025 DO-204AP5 BYV28-50～200 3.5A 50-200V 1.1 0.03 G36 BYT52A-BYT52M 1A 50-1000V 1.3 0.2 DO-204AP7 BYT54A-BYT54M 1.25A 50-1000V 1.5 0.1 DO-204AP8 BYT53A-BYT53M 1.5A 50-1000V 1.1 0.05 DO-204AP9 BYT56A-BYT56M 3A 200-1000V 1.4 0.1 G310 BYM26A-BYM26M 2.3A 200-1000V 1.5 0.03 G311 BYM36A-BYM36M 3A 200-1000V 1.1 0.15 G312 BYW32-BYW38 2A 200-1000V 1.1 0.2 DO-204AP13 BYW52-BYW56 2A 200-1000V 1.1 4 DO-204AP14 BYW72-BYW76 3A 200-600V 1.1 0.2 G315 BYW96A-BYW96E 3A 200-1000V 1.5 0.2 G316 BY228 3A 1500V 1.5 20 G3（2）GP、RGP系列玻钝芯片塑封二极管17 GP10-GP30 1-3A 50-1000V 1.118 RGP01-10～RGP01-20 0.1A 1000-2000V 2 0.2-0.5 DO-4119 RGP05-10～RGP05-20 0.5A 1000-2000V 2 0.2-0.5 DO-4120 RGP10-RGP60 1-6A 50-2000V 1.3 0.15-0.57.PD、TR、PR系列高压塑封二极管1 PD0112-PD0160 0.1A 1200-6000V 1.2-5 DO-412 PD0312-PD0360 0.3A 1200-6000V 1.2-5 DO-153 PD0512-PD0560 0.5A 1200-6000V 1.2-5 DO-154 PD112-PD130 1A 1200-3000V 1.2-4 DO-155 PD1512-PD1530 1.5A 1200-3000V 1.2-4 DO-156 PD212-PD220 2A 1200-2000V 1.2-2.5 DO-201AD7 PD312-PD320 3A 1200-2000V 1.2-2.5 DO-201AD8 PD612-PD620 6A 1200-2000V 1.2-2.5 R-69 TR0112-TR0160 0.1A 1200-6000V 1.5-8 0.5-0.8 DO-4110 TR0312-TR0360 0.3A 1200-6000V 1.5-8 0.5-0.8 DO-1511 TR0512-TR0560 0.5A 1200-6000V 1.5-8 0.5-0.8 DO-1512 TR112-TR130 1A 1200-3000V 1.5-6 0.5-0.8 DO-1513 TR1512-TR1530 1.5A 1200-3000V 1.5-6 0.5-0.8 DO-1514 TR212-TR220 2A 1200-2000V 1.5-2.7 0.5-0.8 DO-201AD15 TR312-TR320 3A 1200-2000V 1.5-2.7 0.5-0.7 DO-201AD16 TR612-TR620 6A 1200-2000V 1.5-2.7 0.5-0.8 R-617 PR01-PR1 0.1-1A 1200-3000V 1.5-4 0.1-0.5 DO-1518 RC2 0.3A 2000V 3 0.5 DO-4119 RU4D-RP3F 1.5A-2A 1300-1500V 1.5 0.3 DO-201AD8.稳压二极管序号名称型号PZM VZW V稳压二极管1 BZX55 0.5W 2.4V-47V2 1N5985B～1N6031B 0.5W 2.4V-200V3 1N4728～1N4764 1W 3.3V-100V4 1N5911B～1N5956B 1.5W 2.7V-200V5 2CW37-2.4～36 0.5W 2.4V-36V6 2CW51-2CW68 0.25W 3V-28.5V7 2CW101-2CW121 1W 3V-37.5V8 2DW50-2DW64 1W 41V-190V9 2DW80-2DW190 3W 41V-190V10 2DW110-2DW151 10W 4.3V-470V11 2DW170-2DW202 50W 4.3V-200V12 温度补偿稳压二极管2DW230-2DW236 0.2W 5.8V-6.6V9.高速开关二极管序号型号IC VRM Trr 外形mA V ns1 1N4148 150 100V 4 DO-352 1N4149-1N4154 150 35-100V 2-4 DO-353 1N4446-1N4454 150 40-100V 1-4 DO-354 1N914 75 100V 4 DO-355 BA V17-BA V21 250 25-250V 50 DO-356 BAW75-BAW76 300 35-75V 4 DO-357 2CK70-2CK79 10-280 20-60V 3-10DO-358 2CK80-2CK85 10-300 20-60V 5-10 DO-359 1S1553-1S1555 100 70-35V 3 DO-3510 1S2471-1S2473 130-110 90-40V 3 DO-35几种常用二极管的特点1．整流二极管整流二极管结构主要是平面接触型，其特点是允许通过的电流比较大，反向击穿电压比较高，但PN结电容比较大，一般广泛应用于处理频率不高的电路中。
BYV32EX-300P双超快速功率二极管产品说明书
BYV32EX-300PDual ultrafast power diodeRev.01 13 March 2019Product data sheet1. General descriptionUltrafast power diode in a SOT186A (TO-220F) plastic package.2. Features and benefits• Ultra low leakage current• High junction temperature up to 175 °C• Low on-state loss• Fast switching• Soft recovery characteristic minimizes power consuming oscillations• High reverse surge capability• High thermal cycling performance• Low thermal resistance3. Applications• Home appliance power supply• Secondary rectification4. Quick reference data5. Pinning information6. Ordering information7. Marking8. Limiting values Table 5. Limiting values9. Thermal characteristics10. Isolation characteristics11. Characteristics12. Package outline13. 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This document supersedes and replaces all information supplied prior to the publication hereof.Suitability for use — WeEn Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-criticalor safety-critical systems or equipment, nor in applications where failureor malfunction of an WeEn Semiconductors product can reasonablybe expected to result in personal injury, death or severe property or environmental damage. WeEn Semiconductors and its suppliers accept no liability for inclusion and/or use of WeEn Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at th e customer’s own risk.Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. WeEn Semiconductors makesno representation or warranty that such applications will be suitable for the specified use without further testing or modification.Customers are responsible for the design and operation of their applications and products using WeEn Semiconductors products, and WeEn Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the WeEn Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.WeEn Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or defaultin the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using WeEn Semiconductors products in order to avoid a default of the applicationsand the products or of the application or use by customer’s third party customer(s). WeEn does not accept any liability in this respect.Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.Export control — This document as well as the item(s) described herein may be subject to export control regulations. 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WeEn Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications.In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without WeEn Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond WeEn Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies WeEn Semiconductors forany liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond WeEn Semiconductors’ standard warranty and WeEn Semiconductors’ product specifications.]PTranslations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions.TrademarksNotice: All referenced brands, product names, service names and trademarks are the property of their respective owners.14. Contents1. General description (1)2. Features and benefits (1)3. Applications (1)4. Quick reference data (1)5. Pinning information (2)6. Ordering information (2)7. Marking (2)8. Limiting values (3)9. Thermal characteristics (5)10. Isolation characteristics (5)11. Characteristics (6)12. Package outline (7)13. Legal information (8)14. Contents (10)© WeEn Semiconductors Co., Ltd. 2019. All rights reservedFor more information, please visit: Forsalesofficeaddresses,pleasesendanemailto:**************************** Date of release: 13 March 2019。
PBYR3060PT资料
Rectifier diodes PBYR30100PT seriesschottky barrierGENERAL DESCRIPTIONQUICK REFERENCE DATADual,low leakage,platinum barrier SYMBOL PARAMETERMAX.MAX.MAX.UNIT schottky rectifier diodes in a plastic envelope featuring low forward PBYR30-60PT 80PT 100PT voltage drop and absence of stored V RRM Repetitive peak reverse 6080100V charge.These devices can withstand voltagereverse voltage transients and have V F Forward voltage 0.70.70.7V guaranteed reverse surge capability.I O(AV)Output current (both 303030AThe devices are intended for use in diodes conducting)switched mode power supplies and high frequency circuits in general where low conduction and zero switching losses are important.PINNING - SOT93PIN CONFIGURATIONSYMBOLPIN DESCRIPTION 1Anode 1 (a)2Cathode (k)3Anode 2 (a)tabCathode (k)LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOL PARAMETERCONDITIONSMIN.MAX.UNIT -60-80-100V RRM Repetitive peak reverse voltage -6080100V V RWM Crest working reverse voltage -6080100V V R Continuous reverse voltage T mb ≤ 139 ˚C -6080100V I O(AV)Output current (both diodes square wave; δ = 0.5;-30A conducting)1T mb ≤ 124 ˚CI O(RMS)RMS forward current-43A I FRM Repetitive peak forward current t = 25 µs; δ = 0.5;-30A per diodeT mb ≤ 124 ˚C I FSMNon-repetitive peak forward t = 10 ms -180A current per diode.t = 8.3 ms-200Asinusoidal; T j = 125 ˚C prior to surge; with reapplied V RWM(max)I 2t I 2t for fusing t = 10 ms-162A 2s I RRM Repetitive peak reverse current t p = 2 µs; δ = 0.001-1A per diode.I RSM Non-repetitive peak reverse t p = 100 µs -1A current per diode.T stg Storage temperature-65175˚C T jOperating junction temperature-150˚C123tab1 For output currents in excess of 20 A connection should be made to the exposed metal mounting base.THERMAL RESISTANCESSYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNITRth j-mb Thermal resistance junction to per diode-- 1.4K/W mounting base both diodes-- 1.0K/WRth j-a Thermal resistance junction to in free air.-45-K/W ambientSTATIC CHARACTERISTICSTj= 25 ˚C unless otherwise statedSYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNITVF Forward voltage (per diode)IF= 15 A; Tj= 125˚C-0.610.70VIF= 30 A; Tj= 125˚C-0.740.85VIF= 15 A; Tj= 25˚C-0.770.85VI R Reverse current (per diode)VR= VRWM; Tj= 25 ˚C- 5.0150µAVR= VRWM; Tj= 125 ˚C- 5.015mACd Junction capacitance (perf = 1MHz; VR= 5V; Tj= 25 ˚C to-600-pF diode)125 ˚CMECHANICAL DATANotes1. Accessories supplied on request: refer to mounting instructions for SOT93 envelope.2. Epoxy meets UL94 V0 at 1/8".DEFINITIONSData sheet statusObjective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.Limiting valuesLimiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application informationWhere application information is given, it is advisory and does not form part of the specification.© Philips Electronics N.V. 1994All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.。
BYX132GPL资料
DATA SHEET
M3D473
BYX132GPL High-voltage car ignition diode
Product specification Supersedes data of 2000 Jul 17 2001 Oct 01
Philips Semiconductors
Preliminary data
Qualification
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL . DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
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BY251P thru BY255PVishay General SemiconductorDocument Number: 88838For technical questions within your region, please contact one of the following:General Purpose Plastic RectifierFEATURES•Low forward voltage drop•Low leakage current, I R less than 0.1 µA •High forward surge capability •Solder dip 260 °C, 40 s•Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONSFor use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes application.(Note: These devices are not Q101 qualified.)MECHANICAL DATACase: DO-201AD, molded epoxy body Epoxy meets UL 94V-0 flammability ratingTerminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102E3 suffix for consumer grade, meets JESD 201 class 1A whisker testPolarity:Color band denotes cathode endPRIMARY CHARACTERISTICSI F(AV) 3.0 A V RRM 200 V to 1300 VI FSM 150 A I R 5.0 µA V F 1.1 V T J max.150 °CMAXIMUM RATINGS (T A = 25°C unless otherwise noted)PARAMETERSYMBOL BY251P BY252P BY253P BY254P BY255P NIT Maximum repetitive peak reverse voltage V RRM 2004006008001300V Maximum RMS voltage V RMS 140280420560910V Maximum DC blocking voltageV DC 2004006008001300VMaximum average forward rectified current 10 mm lead lengthI F(AV) 3.0 APeak forward surge current 10 ms single half sine-wave superimposed on rated loadI FSM150 AMaximum full load reverse current, full cycle average 10 mm lead lengthI R(AV) 100 µA Operating junction and storage temperature rangeT J , T STG- 55 to + 150°C元器件交易网BY251P thru BY255PVishay General Semiconductor For technical questions within your region, please contact one of the following:Document Number: 88838Note:(1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mountedRATINGS AND CHARACTERISTICS CURVES (T A = 25 °C unless otherwise noted)ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)PARAMETER TEST CONDITIONS SYMBOL BY251P BY252P BY253P BY254P BY255PUNITMaximum instantaneous forward voltage3.0 AV F 1.1 V Maximum reverse current at rated DC blocking voltage T A = 25 °CI R 5.0µATypical reverse recovery time I F = 0.5 A, I R = 1.0 V , I rr = 0.25 A t rr 3.0 µsTypical junction capacitance4.0 V , 1 MHzC J40 pFTHERMAL CHARACTERISTICS (T A = 25°C unless otherwise noted)PARAMETERSYMBOL BY251P BY252P BY253P BY254P BY255P UNIT Typical thermal resistance (1) R θJA RθJL20 10°C/WORDERING INFORMATION (Example)PREFERRED P/N UNIT WEIGHT (g)PREFERRED PACKAGE CODEBASE QUANTITYDELIVERY MODEBY253P-E3/54 1.154140013" diameter paper tape and reelBY253P-E3/731.1731000Ammo pack packagingFigure 1. Forward Current Derating CurveFigure 2. Maximum Non-repetitive Peak Forward Surge Current元器件交易网BY251P thru BY255PVishay General SemiconductorDocument Number: 88838For technical questions within your region, please contact one of the following:PACKAGE OUTLINE DIMENSIONS in inches (millimeters)Figure 3. Maximum Non-repetitive Peak Forward Surge Current Figure 4. Typical Instantaneous Forward CharacteristicsFigure 5. Typical Junction Capacitance元器件交易网Disclaimer Legal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件交易网Document Number: 。