AO3421E 规格书AOS

B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C.
Capacitance (pF)
300
250 Ciss
200
150
100
Coss
50
0
Crss
0
5
10
15
20
25
30
-VDS (Volts) Figure 8: Capacitance Characteristics
-ID (Amps)
100.0
10.0 1.0
RDS(ON) limited
0.1
1
2
3
4
5
-VDS (Volts) Fig 1: On-Region Characteristics (Note E)
-ID(A)
10 VDS=-5V
8
6
4
125°C
2
25°C
0
0
1
2
3
4
5
6
-VGS(Volts) Figure 2: Transfer Characteristics (Note E)
Qg(10V) Total Gate Charge
4.6
8
nC
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
VGS=-10V, VDS=-15V, ID=-3A
2.2
4
nC
0.85
nC
Qgd
Gate Drain Charge
1.2
nC
tD(on)
Turn-On DelayTime
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V)
Typical ESD protection
-30V -3A < 95mΩ < 160mΩ
HBM Class 2
SOT23
Top View
Bottom View
D
D D
S
Steady-State
RθJL
63
Max 90 125 80
Units V V
A
W °C
Units °C/W °C/W °C/W
Rev 0: April 2012
www.aosmd.com
Page 1 of 5
AO3421E
Electrical Characteristics (TJ=25°C unless otherwise noted)
Rev 0: April 2012
www.aosmd.com
Page 2 of 5
AO3421E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
-ID (A)
20 -10V
-7V 15
-6V -5V
-4.5V 10
-4V
5
-3.5V
VGS=-3.0V
0
0
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
RDS(ON) (mΩ)
250
230
ID=-3A
210
190
170
150
125°C
130
110
90
70
25°C
50
2
4
6
8
10
-VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
-IS (A)
1.0E+01
1.0E+00
TA=25°C
100
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-30
V
IDSS
Zero Gate Voltage Drain Current
9
ns
Qrr
Body Diode Reverse Recovery Charge IF=-3A, dI/dt=500A/µs
16
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design.
ID
Pulsed Drain Current C
IDM
TA=25°C Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
G
S
Maximum -30 ±20 -3 -2 -18 1.4 0.9
-55 to 150
AO3421E
30V P-Channel MOSFET
General Description
Product Summary
The AO3421E combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
VDS=-30V, VGS=0V
TJ=55°C
-1 µA
-5
IGSS
Gate-Body leakage current
VDS=0V, VGS=±16V
±10 µA
VGS(th) Gate Threshold Voltage
VDS=VGS，ID=-250µA
-1.4 -2 -2.5 V
ID(ON)
On state drain current
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State
RθJA
70 100
Maximum Junction-to-Lead
TJ(Max)=150°C
TA=25°C
10µs
100µs 1ms 10ms
10s DC
0.0
0.01
0.1
1
10
100
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
Power (W)
10000 1000
Page 3 of 5
AO3421E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
-VGS (Volts)
10 VDS=-15V ID=-3A
8
6
4
2
0
0
1
2
3
4
wenku.baidu.com
5
Qg (nC) Figure 7: Gate-Charge Characteristics
G
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TA=25°C TA=70°C
RDS(ON) (mΩ)
150
140
VGS=-4.5V
130
120
110
100
90
VGS=-10V
80
70
0
1
2
3
4
5
6
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Normalized On-Resistance
1.8
1.6
VGS=-10V
ID=-3A
1.4
17
5
1.2
2
VGS=-41.50V
1
ID=-2A
0.8
0
25 50 75 100 125 150 175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Tem1pe8rature
(Note E)
40
1.0E-01
1.0E-02
125°C
1.0E-03
1.0E-04
25°C
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
Rev 0: April 2012
www.aosmd.com
VGS=-10V, VDS=-5V
-18
A
RDS(ON) Static Drain-Source On-Resistance
VGS=-10V, ID=-3A
TJ=125°C
78
95
mΩ
112 135
VGS=-4.5V, ID=-2A
120 160 mΩ
gFS
Forward Transconductance
VDS=-5V, ID=-3A
6
S
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
-0.8 -1
V
IS
Maximum Body-Diode Continuous Current
-1.5 A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
215
pF
46.5
pF
27.5
pF
9.5 19
Ω
SWITCHING PARAMETERS
8
ns
tr
Turn-On Rise Time
VGS=-10V, VDS=-15V, RL=5Ω,
4
ns
tD(off)
Turn-Off DelayTime
RGEN=3Ω
13.5
ns
tf
Turn-Off Fall Time
4
ns
trr
Body Diode Reverse Recovery Time IF=-3A, dI/dt=500A/µs
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with