MEMORY存储芯片MT29C4G96MAZAPCJA中文规格书

MM PUDD =× 100R ONPU,max - R ONPU,min
R ON,nom
MM PDDD =× 100
R ONPD,max - R ONPD,min
R ON,nom 7.The lower and upper bytes of a x16 are each treated on a per byte basis.
8.The minimum values are derated by 9% when the device operates between –40°C and
0°C (T C ).
Table 124: Weak Mode (48˖) Output Driver Electrical Characteristics
Notes: 1.The tolerance limits are specified after calibration with stable voltage and temperature.
For the behavior of the tolerance limits if temperature or voltage changes after calibra-
tion, see following section on voltage and temperature sensitivity.
2.The tolerance limits are specified under the condition that V DDQ = V DD and that V SSQ =
V SS .
3.Micron recommends calibrating pull-down and pull-up output driver impedances at 0.8
× V DDQ . Other calibration schemes may be used to achieve the linearity specification
shown above; for example, calibration at 0.5 × V DDQ and 1.1 V DDQ .
4.DQ-to-DQ mismatch within byte variation for a given component including DQS_t and
DQS_c (characterized).
5.Measurement definition for mismatch between pull-up and pull-down, MM PUPD :
Measure both R ONPU and R ONPD at 0.8 × V DDQ separately; R ON,nom is the nominal R ON val-
ue:
MM PUPD =× 100R ONPU - R ONPD R ON,nom
6.R ON variance range ratio to R ON nominal value in a given component, including DQS_t
and DQS_c:
8Gb: x4, x8, x16 DDR4 SDRAM Electrical Characteristics – AC and DC Output Driver Charac-teristics
Figure 239: Alert Driver
V OUT
Alert driver
V SSQ
R ONPD when R ONPU is off:
R ONPD =V OUT
I OUT
Table 127: Alert Driver Voltage
Note: 1.V DDQ voltage is at V DDQ(DC).Electrical Characteristics – On-Die Termination Characteristics ODT Levels and I-V Characteristics
On-die termination (ODT) effective resistance settings are defined and can be selected
by any or all of the following options:
•MR1[10:8] (R TT(NOM)): Disable, 240 ohms, 120 ohms, 80 ohms, 60 ohms, 48 ohms, 40
ohms, and 34 ohms.
•MR2[11:9] (R TT(WR)): Disable, 240 ohms,120 ohms, and 80 ohms.
•MR5[8:6] (R TT(Park)): Disable, 240 ohms, 120 ohms, 80 ohms, 60 ohms, 48 ohms, 40
ohms, and 34 ohms.
ODT is applied to the following inputs:
•x4: DQ, DM_n, DQS_t, and DQS_c inputs.
•x8: DQ, DM_n, DQS_t, DQS_c, TDQS_t, and TDQS_c inputs.
•x16: DQ, LDM_n, UDM_n, LDQS_t, LDQS_c, UDQS_t, and UDQS_c inputs.
A functional representation of ODT is shown in the figure below.
8Gb: x4, x8, x16 DDR4 SDRAM Electrical Characteristics – On-Die Termination Characteristics
2.Micron recommends calibrating pull-up ODT resistors at 0.8 × V DDQ . Other calibration
schemes may be used to achieve the linearity specification shown here.
3.The tolerance limits are specified under the condition that V DDQ = V DD and V SSQ = V SS .
4.The DQ-to-DQ mismatch within byte variation for a given component including DQS_t
and DQS_c.
5.R TT variance range ratio to R TT nominal value in a given component, including DQS_t
and DQS_c.
DQ-to-DQ mismatch =R TT(MAX) - R TT(MIN)
R TT(NOM)× 100
6.DQ-to-DQ mismatch for a x16 device is treated as two separate bytes.
7.For IT, AT, and UT devices, the minimum values are derated by 9% when the device op-
erates between –40°C and 0°C (TC).
ODT Temperature and Voltage Sensitivity
If temperature and/or voltage change after calibration, the tolerance limits widen ac-
cording to the following equations and tables.
˂T = T - T(@ calibration); ˂V = V DDQ - V DDQ (@ calibration); V DD = V DDQ
Table 129: ODT Sensitivity Definitions
Table 130: ODT Voltage and Temperature Sensitivity
ODT Timing Definitions
The reference load for ODT timings is different than the reference load used for timing
measurements.
Figure 241: ODT Timing Reference Load
8Gb: x4, x8, x16 DDR4 SDRAM Electrical Characteristics – On-Die Termination Characteristics。