DTC143TM3T5G资料

∞ቤተ መጻሕፍቲ ባይዱ
DTC123EM3T5G DTC143EM3T5G
8H 8J
2.2
2.2
SOT−723
4.7
4.7
(Pb−Free)
8000/Tape & Reel
DTC143ZM3T5G*
8K
4.7
47
DTC124XM3T5G*
8L
22
47
DTC123JM3T5G
8M
2.2
47
DTC115EM3T5G
8N
100
Device DTC114EM3T5G
Marking 8A
R1 (K) 10
R2 (K) 10
Package
Shipping†
DTC124EM3T5G
8B
22
22
DTC144EM3T5G
8C
47
47
DTC114YM3T5G
8D
10
47
DTC114TM3T5G
8E
10
∞
DTC143TM3T5G
8F
4.7
DTC114TM3T5G
160
350
−
DTC143TM3T5G
160
350
−
DTC123EM3T5G
8.0
15
−
DTC143EM3T5G
15
30
−
DTC143ZM3T5G
80
200
−
DTC124XM3T5G
80
150
−
DTC123JM3T5G
80
140
−
DTC115EM3T5G
80
150
−
DTC144WM3T5G
DTC114EM3T5G Series
Digital Transistors (BRT)
NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The digital transistor eliminates these individual components by integrating them into a single device. The use of a digital transistor can reduce both system cost and board space. The device is housed in the SOT−723 package which is designed for low power surface mount applications.
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS (Note 4)
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)

NPN SILICON DIGITAL TRANSISTORS
PIN 1
R1
BASE
(INPUT) R2
PIN 3 COLLECTOR
(OUTPUT)
PIN 2 EMITTER (GROUND)
3
2 1
SOT−723 CASE 631AA
STYLE 1
MARKING DIAGRAM xx
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current
Vdc
−
0.2
−
0.2
−
0.2
−
0.2
−
0.2
−
0.2
−
0.2
−
0.2
−
0.2
−
0.2
−
0.2
−
0.2
−
0.2
−
0.2
3
DTC114EM3T5G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
−
DTC144TM3T5G
−
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) DTC115EM3T5G
−
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) DTC144WM3T5G
−
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
VOH
4.9
−
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) DTC143TM3T5G
DTC143ZM3T5G
DTC114TM3T5G
DTC144TM3T5G
80
140
−
DTC144TM3T5G
160
350
−
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
VCE(sat)
−
(IC = 10 mA, IB = 5 mA)
DTC123EM3T5G
(IC = 10 mA, IB = 1 mA)
−
Vdc
−
Vdc
ON CHARACTERISTICS (Note 3)
DC Current Gain (VCE = 10 V, IC = 5.0 mA)
DTC114EM3T5G
hFE
35
60
−
DTC124EM3T5G
60
100
−
DTC144EM3T5G
80
140
−
DTC114YM3T5G
80
140
−
Symbol PD
RqJA PD
RqJA TJ, Tstg
Max
260 2.0 480
600 4.8 205 −55 to +150
Unit
mW mW/°C °C/W
mW mW/°C °C/W
°C
2
DTC114EM3T5G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
IC
100
mAdc
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
DTC143TM3T5G/DTC114TM3T5G/
DTC143EM3T5G/DTC143ZM3T5G/
DTC124XM3T5G/DTC144TM3T5G
−
0.25
Vdc
Output Voltage (on)
VOL
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) DTC114EM3T5G
Features
• Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • The SOT−723 Package can be Soldered using Wave or Reflow. • Available in 4 mm, 8000 Unit Tape & Reel • These are Pb−Free Devices
M
xx = Specific Device Code (See Marking Table on page 2)
M = Date Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
−
DTC124EM3T5G
−
DTC114YM3T5G
−
DTC114TM3T5G
−
DTC143TM3T5G
−
DTC123EM3T5G
−
DTC143EM3T5G
−
DTC143ZM3T5G
−
DTC124XM3T5G
−
DTC123JM3T5G
−
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) DTC144EM3T5G
ICEO
−
Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0)
DTC114EM3T5G
IEBO
−
DTC124EM3T5G
−
DTC144EM3T5G
−
DTC114YM3T5G
−
DTC114TM3T5G
−
DTC143TM3T5G
−
DTC123EM3T5G
−
DTC143EM3T5G
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0)
Total Device Dissipation, FR−4 Board (Note 2) @ TA = 25°C Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 2)
Junction and Storage Temperature Range 1. FR−4 @ minimum pad. 2. FR−4 @ 1.0 × 1.0 inch pad.
−
0.13
−
0.2
Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0)
Collector−Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0)
V(BR)CBO
50
−
V(BR)CEO
50
−
−
DTC143ZM3T5G
−
DTC124XM3T5G
−
DTC123JM3T5G
−
DTC115EM3T5G
−
DTC144WM3T5G
−
DTC144TM3T5G
−
−
100
nAdc
−
500
nAdc
−
0.5
mAdc
−
0.2
−
0.1
−
0.2
−
0.9
−
1.9
−
2.3
−
1.5
−
0.18
−
0.13
−
0.2
−
0.05
*Available upon request.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation, FR−4 Board (Note 1) @ TA = 25°C Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 1)
100
DTC144WM3T5G*
8P
47
22
DTC144TM3T5G
8T
47
∞
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
1
March, 2006 − Rev. 3
Publication Order Number: DTC114EM3/D
DTC114EM3T5G Series
DEVICE MARKING AND RESISTOR VALUES