BT151F-650中文资料

Philips Semiconductors Product specificationThyristors BT151F seriesGENERAL DESCRIPTIONQUICK REFERENCE DATAPassivated thyristors in a full pack,SYMBOL PARAMETERMAX.MAX.MAX.UNIT plastic envelope,intended for use in applications requiring high BT151F-500650800bidirectional blocking voltage V DRM ,Repetitive peak off-state 500650800V capability and high thermal cycling V RRM voltagesperformance.Typical applications I T(AV)Average on-state current 5.7 5.7 5.7A include motor control,industrial and I T(RMS)RMS on-state current999A domestic lighting,heating and static I TSMNon-repetitive peak on-state 100100100Aswitching.currentPINNING - SOT186PIN CONFIGURATIONSYMBOLLIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT -500-650-800V DRM , V RRM Repetitive peak off-state-50016501800V voltages I T(AV)Average on-state current half sine wave; T hs ≤ 87 ˚C - 5.7A I T(RMS)RMS on-state current all conduction angles-9A I TSMNon-repetitive peak half sine wave; T j = 125 ˚C prior on-state currentto surge; with reapplied V DRM(max)t = 10 ms -100A t = 8.3 ms -110A I 2t I 2t for fusingt = 10 ms-50A 2s dI T /dt Repetitive rate of rise of I TM = 20 A; I G = 50 mA;-50A/µs on-state current after dI G /dt = 50 mA/µstriggeringI GM Peak gate current -2A V GM Peak gate voltage-5V V RGM Peak reverse gate voltage -5V P GM Peak gate power -5W P G(AV)Average gate power over any 20 ms period -0.5W T stg Storage temperature -40150˚C T jOperating junction -125˚Ctemperature1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs.Philips Semiconductors Product specificationThyristors BT151F seriesISOLATION LIMITING VALUE & CHARACTERISTICT hs = 25 ˚C unless otherwise specified SYMBOL PARAMETERCONDITIONSMIN.TYP.MAX.UNIT V isol Repetitive peak voltage from all R.H. ≤ 65% ; clean and dustfree-1500V three terminals to external heatsinkC isolCapacitance from T2 to external f = 1 MHz -12-pFheatsinkTHERMAL RESISTANCESSYMBOL PARAMETER CONDITIONSMIN.TYP.MAX.UNIT R th j-hs Thermal resistance with heatsink compound -- 4.5K/W junction to heatsink without heatsink compound -- 6.5K/W R th j-aThermal resistance in free air-55-K/Wjunction to ambientSTATIC CHARACTERISTICST j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONSMIN.TYP.MAX.UNIT I GT Gate trigger current V D = 12 V; I T = 0.1 A -215mA I L Latching current V D = 12 V; I GT = 0.1 A -1040mA I H Holding current V D = 12 V; I GT = 0.1 A -720mA V T On-state voltage I T = 23 A- 1.4 1.75V V GT Gate trigger voltage V D = 12 V; I T = 0.1 A-0.6 1.5V V D = V DRM(max); I T = 0.1 A; T j = 125 ˚C 0.250.4-V I D , I ROff-state leakage currentV D = V DRM(max); V R = V RRM(max); T j = 125 ˚C-0.10.5mADYNAMIC CHARACTERISTICST j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONSMIN.TYP.MAX.UNITdV D /dtCritical rate of rise of V DM = 67% V DRM(max); T j = 125 ˚C;off-state voltage exponential waveformGate open circuit50130-V/µs R GK = 100 Ω2001000-V/µs t gt Gate controlled turn-on I TM = 40 A; V D = V DRM(max); I G = 0.1 A;-2-µs timedI G /dt = 5 A/µst qCircuit commutated V D = 67% V DRM(max); T j = 125 ˚C;-70-µsturn-off timeI TM = 20 A; V R = 25 V; dI TM /dt = 30 A/µs;dV D /dt = 50 V/µs; R GK = 100 ΩPhilips Semiconductors Product specificationThyristors BT151F seriesFig.3. Maximum permissible rms current I T(RMS) ,versus heatsink temperature T hs .Fig.6. Normalised gate trigger voltageV GT (T j )/ V GT (25˚C), versus junction temperature T j .-50501001500246810Ths / CIT(RMS) / A87 C-50501001500.40.60.811.21.41.6Tj / CVGT(Tj)VGT(25 C)Philips Semiconductors Product specificationThyristors BT151F seriesFig.7. Normalised gate trigger current I GT (T j )/ I GT (25˚C), versus junction temperature T j .Fig.10. Typical and maximum on-state characteristic.-505010015000.511.522.53Tj / CIGT(Tj)IGT(25 C)00.51 1.5251015202530VT / VIT / A Tj = 125 C Tj = 25 CVo = 1.06 VRs = 0.0304 ohmstyp maxPhilips Semiconductors Product specificationThyristors BT151F seriesMECHANICAL DATANotes1. Refer to mounting instructions for F-pack envelopes.2. Epoxy meets UL94 V0 at 1/8".Philips Semiconductors Product specification Thyristors BT151F seriesDEFINITIONSData sheet statusObjective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.Limiting valuesLimiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections ofthis specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application informationWhere application information is given, it is advisory and does not form part of the specification.© Philips Electronics N.V. 1999All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.。