物理气相沉积
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B
Bipolar RS>100 cycles, low bias, stable distribution of switching characteristic
C
Ohmic and Poole–Frenkel conductions play dominant role
D
E
Switching mechanism involves formation/rupture of filaments made of O2 vacancies.
法,该技术推动了IC制造业的大发展。
8088
• 1979年3月 • 16 Bit • 29000晶体管 • 5到8MHz
Intel 386
• 1985年10月 • 32 Bit • 275000晶体管 • 16到32 MHz • 1um
• 1.5um
• 1989年4月 • 32 Bit • 1,200,000晶体管 • 25到50 MHz • 1-0.8um
各种炮和武 15.7 器 车辆 14.3
国防预算中 40.7 的电子含量
注: *电子含量=电子采购费+科研费/国防武器装备采购费+科研费资料来源
In the last several decades, computer memory develops rapidly by reducing the size of the unit cell and increasing the intensity of the memories.
(Bede D1, Bede PLC London, UK)
● Optical transmittance: Hitachi U2800 UV/VIS spectrophotometer
wavelength range from 200 to 800 nm
● Electrical Measurements
3. Results and discussion
Fig. 6. (Color online) (a) Stress data characteristics of ITO/CeO2/ITO memory device at RT and at 85 ° C showing long term stability. (b) Retention data of HRS and LRS at room temperature and at 85 ° C.
characteristic dimension reaches to the physics limitation. Moore's Law
To solve the problems, resistive random access memory (RRAM) is emerging as an important nonvolatile memory (NVM) technology.[1]
▼ Top Electrodes ---- ITO
● ● ● ● ● ● Aim: resistance switching measurements Size: 75 nm thick × 150 μm in diameter Deposited by RF magnetron sputtering with a metal shadow mask Chamber Pressure: maintained at 10 mTorr Sputter Power: 100 W Environment: Ar
The First IC Bipolar logic 1960’s
德州仪器公司 2个晶体管，4个二极管， 6个电阻，4个电容
Intel 4004 Microprocessor
introduced in 1971 108KHz clock rate 10 micron 2300 transistors
RF & TRRAM 器件
报告结构
文献一 文献二 文献三
TRRAM 溅射镀膜的原理 磁控溅射镀膜技术与传统的镀膜技术相比的优点 磁控溅射薄膜附着性能的影响因素
文献四
文献五 文献六
磁控溅射镀膜工艺典型故障及原因、措施分析
P掺杂氧化锌（热蒸发法）
ENIAC (1946)
The first electronic computer 18,000 Transistors Size：24m×6m×2.5m Speed：5000times/sec； Weight：30T； Power：140KW； Average run time：7min
Fig. 1. (Color online) (a) XRD pattern of ITO/CeO2/ITO/glass device, having CeO2 layer of 15 nm thickness.
3. Results and discussion
Fig. 2. (Color online) (a) Optical transmittance spectrum of the ITO/CeO2/ITO device in the visible wavelength region. Inset shows schematic configuration of the capacitor structure. (b) The direct band gap energy of CeO2 films. Inset shows the transparency pi...
Exhibit both Ce3+ and Ce4+ ionic states
2. Experimental procedure
▼ Ceria (CeO2) thin films ---- 15 to 25 nm thickness
● Deposited by radio-frequency (RF) magnetron sputtering ● Target: CeO2 ceramic
2. Experimental procedure
Analytical approach
● Crystal structure: X-ray diffractometer
using Cu Kα (λ=1.542 Å) radiations for 2θ ranging from 20° to 80°.
承载16个量子位的硅芯片
IBM 研制 模拟 人脑 神经 元结 构的 计算 机
Abstract
Highlights
Fully transparent resistive random access memory (TRRAM) device based on CeO2
A
ITO/CeO2/ITO device shows ~81% transmission in the visible region from 400–700 nm.
by B1500A semiconductor parameter analyzer
A bias voltage was applied to the top electrode, while the bottom electrode was grounded.
3. Results and discussion
X-ray diffraction (XRD) pattern for the ITO/CeO2/ITO device
CeO2
● “fluorite cubic structure of CeO2” ● the weak polycrystalline nature ITO electrode ● also exhibits polycrystalline structure
3. Results and discussion
Fig. 3. (Color online) Typical I–V curves show the initial forming process and first sweep of the bipolar resistive switching behavior of ITO/CeO2/ITO devices having CeO2 layer thickness of (a) 15 nm, (b) 20 nm (c) 25 nm, (d) Forming and switching voltage vari...
The Transistor Revolution (1948) First transistor Bell Labs
1959年4月，Kurt Lehovec提出了用PN结来隔离集成电路中的各个晶体
管和其他元件，从而解决了集成电路制造的一个关键问题。
1959年7月，美国仙童公司（Fairchild Semiconductor）的Robert Nocye 提出了用平面工艺来制造集成电路பைடு நூலகம்并在氧化膜上制造互连线的方
ENIAC - The first electronic computer
First transistor Bell Labs
However, conventional memory techniques are facing numerous scaling
and reliability challenges when the
1. Introduction
Non-volatility
TRRAM
Excellent memory characteristics:
● High storage capacity ● Long retention time ● Low power consumption
CeO2
Characteristics high transparency, band gap, dielectric constant, refractive index, thermal stability
• 1993年3月
• 32 Bit • 3,100,000晶体管 • 60到166 MHz • 0.8um
Intel 486
Pentium
集成电路产业对国家安全与国防建设的作用
各类武器装备经费预算中的电子含量*(单位：%)
1993 飞机 导弹 空间 舰船 37.6 52.9 59 36.2 1994 40.1 55.2 57.6 31.1 17.5 14.4 41.2 1995 40.3 59.3 58.8 34.9 19.3 16.4 41.4 1996 39.4 59.9 58.9 31.4 19.8 22.8 41.4 1997 39.1 59.6 58.8 32.8 20.4 26.6 42 1998 38.8 60.3 60 32.1 20.8 25.8 42.5 1999 37.8 60.1 60.9 34.8 20.6 24.8 42.9 2000 38.9 59.5 61.6 34.9 20.8 28.4 43.6 2001 39.1 59.9 61.9 34 22.7 29.4 43.6
● ● ● ● ●
Substrate: commercial ITO coated glass (ITO thickness200 nm) Medium: argon–oxygen (20:10) Temperature: room temperature Base Pressure: below 1.2×10−6 Torr by a turbomolecular pump(涡轮分子泵) Working Pressure: maintained at 10 mTorr, RF power: 75 W
3. Results and discussion
Good endurance
Fig. 4. (Color online) Endurance performance of the ITO/CeO2/ITO device.
Fig. 5. (Color online) Cumulative distributions of the values of (a) Ron and Roff (b) Vset and Vreset for the ITO/CeO2/ITO/glass devices.
Bipolar RS>100 cycles, low bias, stable distribution of switching characteristic
C
Ohmic and Poole–Frenkel conductions play dominant role
D
E
Switching mechanism involves formation/rupture of filaments made of O2 vacancies.
法,该技术推动了IC制造业的大发展。
8088
• 1979年3月 • 16 Bit • 29000晶体管 • 5到8MHz
Intel 386
• 1985年10月 • 32 Bit • 275000晶体管 • 16到32 MHz • 1um
• 1.5um
• 1989年4月 • 32 Bit • 1,200,000晶体管 • 25到50 MHz • 1-0.8um
各种炮和武 15.7 器 车辆 14.3
国防预算中 40.7 的电子含量
注: *电子含量=电子采购费+科研费/国防武器装备采购费+科研费资料来源
In the last several decades, computer memory develops rapidly by reducing the size of the unit cell and increasing the intensity of the memories.
(Bede D1, Bede PLC London, UK)
● Optical transmittance: Hitachi U2800 UV/VIS spectrophotometer
wavelength range from 200 to 800 nm
● Electrical Measurements
3. Results and discussion
Fig. 6. (Color online) (a) Stress data characteristics of ITO/CeO2/ITO memory device at RT and at 85 ° C showing long term stability. (b) Retention data of HRS and LRS at room temperature and at 85 ° C.
characteristic dimension reaches to the physics limitation. Moore's Law
To solve the problems, resistive random access memory (RRAM) is emerging as an important nonvolatile memory (NVM) technology.[1]
▼ Top Electrodes ---- ITO
● ● ● ● ● ● Aim: resistance switching measurements Size: 75 nm thick × 150 μm in diameter Deposited by RF magnetron sputtering with a metal shadow mask Chamber Pressure: maintained at 10 mTorr Sputter Power: 100 W Environment: Ar
The First IC Bipolar logic 1960’s
德州仪器公司 2个晶体管，4个二极管， 6个电阻，4个电容
Intel 4004 Microprocessor
introduced in 1971 108KHz clock rate 10 micron 2300 transistors
RF & TRRAM 器件
报告结构
文献一 文献二 文献三
TRRAM 溅射镀膜的原理 磁控溅射镀膜技术与传统的镀膜技术相比的优点 磁控溅射薄膜附着性能的影响因素
文献四
文献五 文献六
磁控溅射镀膜工艺典型故障及原因、措施分析
P掺杂氧化锌（热蒸发法）
ENIAC (1946)
The first electronic computer 18,000 Transistors Size：24m×6m×2.5m Speed：5000times/sec； Weight：30T； Power：140KW； Average run time：7min
Fig. 1. (Color online) (a) XRD pattern of ITO/CeO2/ITO/glass device, having CeO2 layer of 15 nm thickness.
3. Results and discussion
Fig. 2. (Color online) (a) Optical transmittance spectrum of the ITO/CeO2/ITO device in the visible wavelength region. Inset shows schematic configuration of the capacitor structure. (b) The direct band gap energy of CeO2 films. Inset shows the transparency pi...
Exhibit both Ce3+ and Ce4+ ionic states
2. Experimental procedure
▼ Ceria (CeO2) thin films ---- 15 to 25 nm thickness
● Deposited by radio-frequency (RF) magnetron sputtering ● Target: CeO2 ceramic
2. Experimental procedure
Analytical approach
● Crystal structure: X-ray diffractometer
using Cu Kα (λ=1.542 Å) radiations for 2θ ranging from 20° to 80°.
承载16个量子位的硅芯片
IBM 研制 模拟 人脑 神经 元结 构的 计算 机
Abstract
Highlights
Fully transparent resistive random access memory (TRRAM) device based on CeO2
A
ITO/CeO2/ITO device shows ~81% transmission in the visible region from 400–700 nm.
by B1500A semiconductor parameter analyzer
A bias voltage was applied to the top electrode, while the bottom electrode was grounded.
3. Results and discussion
X-ray diffraction (XRD) pattern for the ITO/CeO2/ITO device
CeO2
● “fluorite cubic structure of CeO2” ● the weak polycrystalline nature ITO electrode ● also exhibits polycrystalline structure
3. Results and discussion
Fig. 3. (Color online) Typical I–V curves show the initial forming process and first sweep of the bipolar resistive switching behavior of ITO/CeO2/ITO devices having CeO2 layer thickness of (a) 15 nm, (b) 20 nm (c) 25 nm, (d) Forming and switching voltage vari...
The Transistor Revolution (1948) First transistor Bell Labs
1959年4月，Kurt Lehovec提出了用PN结来隔离集成电路中的各个晶体
管和其他元件，从而解决了集成电路制造的一个关键问题。
1959年7月，美国仙童公司（Fairchild Semiconductor）的Robert Nocye 提出了用平面工艺来制造集成电路பைடு நூலகம்并在氧化膜上制造互连线的方
ENIAC - The first electronic computer
First transistor Bell Labs
However, conventional memory techniques are facing numerous scaling
and reliability challenges when the
1. Introduction
Non-volatility
TRRAM
Excellent memory characteristics:
● High storage capacity ● Long retention time ● Low power consumption
CeO2
Characteristics high transparency, band gap, dielectric constant, refractive index, thermal stability
• 1993年3月
• 32 Bit • 3,100,000晶体管 • 60到166 MHz • 0.8um
Intel 486
Pentium
集成电路产业对国家安全与国防建设的作用
各类武器装备经费预算中的电子含量*(单位：%)
1993 飞机 导弹 空间 舰船 37.6 52.9 59 36.2 1994 40.1 55.2 57.6 31.1 17.5 14.4 41.2 1995 40.3 59.3 58.8 34.9 19.3 16.4 41.4 1996 39.4 59.9 58.9 31.4 19.8 22.8 41.4 1997 39.1 59.6 58.8 32.8 20.4 26.6 42 1998 38.8 60.3 60 32.1 20.8 25.8 42.5 1999 37.8 60.1 60.9 34.8 20.6 24.8 42.9 2000 38.9 59.5 61.6 34.9 20.8 28.4 43.6 2001 39.1 59.9 61.9 34 22.7 29.4 43.6
● ● ● ● ●
Substrate: commercial ITO coated glass (ITO thickness200 nm) Medium: argon–oxygen (20:10) Temperature: room temperature Base Pressure: below 1.2×10−6 Torr by a turbomolecular pump(涡轮分子泵) Working Pressure: maintained at 10 mTorr, RF power: 75 W
3. Results and discussion
Good endurance
Fig. 4. (Color online) Endurance performance of the ITO/CeO2/ITO device.
Fig. 5. (Color online) Cumulative distributions of the values of (a) Ron and Roff (b) Vset and Vreset for the ITO/CeO2/ITO/glass devices.