MITSUBISHI ELECTRIC AN-UHF-108-A 说明书
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Document NO. AN-UHF-108-A
Date : 3th Jun. 2010
Rev. Date :22th Jun. 2010
Prepared : ita, K.Osaki
Y.Tanaka
Confirmed : S.Kametani
(Taking charge of Silicon RF by
MIYOSHI Electronics) SUBJECT: RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.
SUMMARY:
This application note shows the RF wide-band characteristics data (Frequency characteristics, Pin vs. Pout characteristics, Pout vs. Vdd characteristics and Pout vs. Idq characteristics) at f=400 to 470MHz.
- Sample history:
RD02MUS1B: Lot number “093AF-G”
- Evaluate conditions:
@f=400MHz : Vdd=7.2V, Pin=50mW, Idq=0.2A (Vgg adj.)
@f=435MHz : Vdd=7.2V, Pin=50mW, Idq=0.2A (Vgg adj.)
@f=470MHz : Vdd=7.2V, Pin=50mW, Idq=0.2A (Vgg adj.)
- Results:
Page 2-4 shows the Output Power, Drain Efficiency vs. Frequency data.
Page 5-7 shows the Output Power, Power Gain, Drain Efficiency vs. Input Power data.
Page 8-10 shows the Output Power, Drain Current, Drain Efficiency vs. Drain Voltage data.
Page 11-13 shows the Output Power, Drain Current, Drain Efficiency vs. Drain Quiet Current data.
Page 14 shows the Input / Output Impedance vs. Frequency characteristics
Page 15 shows the Equivalent Circuit and schematic for test fixture.
RD02MUS1B Output Power, Drain Efficiency vs. Frequency (@ f=400 - 470MHz, Pin=50mW, Vdd=7.2V, Idq=0.2A)
RD02MUS1B Output Power, Drain Efficiency vs. Frequency (@ f=400 - 470MHz, Pin=50mW, Vdd=7.2V, Idq=0.3A)
RD02MUS1B Output Power, Drain Efficiency vs. Frequency (@ f=400 - 470MHz, Pin=50mW, Vdd=7.2V, Idq=0.4A)
RD02MUS1B Output Power, Power Gain, Drain Efficiency vs. Input Power (@ f=400MHz, Vdd=7.2V, Idq=0.2A)
RD02MUS1B Output Power, Power Gain, Drain Efficiency vs. Input Power (@ f=435MHz, Vdd=7.2V, Idq=0.2A)
RD02MUS1B Output Power, Power Gain, Drain Efficiency vs. Input Power (@ f=470MHz, Vdd=7.2V, Idq=0.2A)
RD02MUS1B Output Power, Drain Current, Drain Efficiency vs. Drain Voltage (@ f=400MHz, Pin=50mW, Idq=0.2A)
RD02MUS1B Output Power, Drain Current, Drain Efficiency vs. Drain Voltage (@ f=435MHz, Pin=50mW, Idq=0.2A)
RD02MUS1B Output Power, Drain Current, Drain Efficiency vs. Drain Voltage (@ f=470MHz, Pin=50mW, Idq=0.2A)
RD02MUS1B Output Power, Drain Current, Drain Efficiency vs. Drain Quiet Current (@ f=400MHz, Pin=50mW, Vdd=7.2V)
RD02MUS1B Output Power, Drain Current, Drain Efficiency vs. Drain Quiet Current (@ f=435MHz, Pin=50mW, Vdd=7.2V)
RD02MUS1B Output Power, Drain Current, Drain Efficiency vs. Drain Quiet Current (@ f=470MHz, Pin=50mW, Vdd=7.2V)
RD02MUS1B Input / Output Impedance vs. Frequency characteristics
Zout* (f=400,435,470MHz)
Zout* : Complex conjugate of Output impedance.
---------------------------------------------------------------------------------------------------------------------------------------------- Zin* (f=400,435,470MHz)
Zin* : Complex conjugate of Iutput impedance.
RD02MUS1B Equivalent Circuit (@f=400-470MHz)
Note:Board material – Glass-Epoxy Substrate. Microstrip line width=1.3mm/50 OHM,er:4.8,t=0.8mm. W:Line width=1.0mm.
GND
Vgg
W
W。