Semiconductor device and manufacturing method ther
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专利名称：Semiconductor device and manufacturing
method thereof
发明人：Naoyoshi Tamura
申请号：US12261173
申请日：20081030
公开号：US08269256B2
公开日：
20120918
专利内容由知识产权出版社提供
专利附图：
摘要：A semiconductor device includes a semiconductor substrate, a gate insulating film formed over the semiconductor substrate, a gate electrode formed on the gate insulating film, a first semiconductor layer which is embedded into a portion on both
sides of the gate electrode in the semiconductor substrate, and which includes Si and a 4B group element other than Si, and a second semiconductor layer which is embedded into the portion on both sides of the gate electrode in the semiconductor substrate, so as to be superposed on the first semiconductor layer, and which includes Si and a 4B group element other than Si, wherein the gate electrode is more separated from an end of the first semiconductor layer than from an end of the second semiconductor layer.
申请人：Naoyoshi Tamura
地址：Kawasaki JP
国籍：JP
代理机构：Westerman, Hattori, Daniels & Adrian, LLP
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