1B贴片三极管丝印参数

V
—— I
CEsat
C
DC CURRENT GAIN h FE
1000
300
100 0.1
1000
BASE-EMITTER SATURATION
(mV)
CEsat
VOLTAGE V
COLLECTOR-EMITTER SATURATION
300
100
T =100 ℃ a
T =25 ℃ a
30
10 0.1
I =0/I =0
E
C
T =25℃ a
Cob
CAPACITANCE C (pF)
COLLCETOR CURRENT I (mA) C
TRANSITION FREQUENCY f (MHz) T
0.1
0.2
0.4
0.6
0.8
1.0
BASE-EMITTER VOLTAGE V (V) BE
1000
V =5V CE
CE
T =100 ℃ a
T =25 ℃ a
1
10
100
COLLECTOR CURRENT I (mA) C
V
—— I
BEsat
C
T =25 ℃ a T =100 ℃ a
1
10
COLLECTOR CURRENT I (mA) C
C /C —— V /V
ob ib
CB EB
Cib
β=20
100
f=1MHz
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO IC PC TJ Tstg
Emitter-Base Voltage Collector Current –Continuous Collector Power Dissipation Junction Temperature Storage Temperature
BC847A, B, C
BC848A, B, C
FEATURES z Ideally suited for automatic insertion z For Switching and AF Amplifier Applications
SOT-23
1. BASE 2. EMITTER 3. COLLECTOR
3000×15 PCS
Label on the Reel 3000×1 PCS
Seal the box with the tape
The top gasket
Stamp “EMPTY” on the empty box
Seal the box with the tape
QA Label
Label on the Inner Box Inner Box: 210 mm× 208 mm×203 mm
Unit V
V
V A mW ℃ ℃
A,May,2011
【 南京南山半导体有限公司 — 长电贴片三极管选型资料】

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
IE= 10µA, IC=0 VCB=70 V , IE=0 VCB=50 V , IE=0 VCB=30 V , IE=0 VCE=60 V , IB=0 VCE=45 V , IB=0 VCE=30 V , IB=0 VEB=5 V , IC=0
VCE= 5V, IC= 2mA
IC=100mA, IB= 5mA IC=100mA, IB= 5mA VCE= 5 V, IC= 10mA
COLLECTOR CURRENT I (mA) C
18 16
12
8
4
0 0
1000
Static Characteristic
60uA 54uA 48uA
42uA 36uA
COMMON
EMITTER T =25℃
a
30uA
24uA
18uA
12uA
I =6uA
B
1
2
3
4
5
6
COLLECTOR-EMITTER VOLTAGE V (V) CE
f=100MHz VCB=10V,f=1MHz
Min Typ 80 50 30 65 45 30 6
Max Unit V
V V
0.1 μA
0.1 μA
0.1 μA
110
220
200
450
420
800
0.5 V
1.1 V
100
MHz
4.5 pF
A,May,2011
Typical Characteristics
Transition frequency
Collector output capacitance
Symbol VCBO
VCEO VEBO ICBO
ICEO IEBO hFE VCE(sat) VBE(sat)
fT
Cob
Test conditions
IC= 10µA, IE=0
IC= 10mA, IB=0
BC846
BC847
BC848
Collector-emitter breakdown voltage
BC846
BC847
BC848
Emitter-base breakdown voltage
Collector cut-off current
BC846
BC847
BC848
Collector cut-off current
Min.
Max.
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
ቤተ መጻሕፍቲ ባይዱ
0.089
0.100
0.037 TYP.
0.071
0.079
0.022 REF.
0.012
0.020
0°
8°
The bottom gasket
【 南京南山半导体有限公司 — 长电贴片三极管选型资料】

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
BC846A, B
TRANSISTOR (NPN)
Label on the Outer Box Outer Box: 440 mm× 440 mm× 230 mm
50
75
100
125
150
AMBIENT TEMPERATURE T (℃) a
A,May,2011
【 南京南山半导体有限公司 — 长电三极管选型资料】

Symbol
A A1 A2 b c D E E1 e e1 L L1 θ
Dimensions In Millimeters
Min.
Max.
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950 TYP.
1.800
2.000
0.550 REF.
0.300
0.500
0°
8°
Dimensions In Inches
1
10
COLLECTOR CURRENT I (mA) c
I —— V
C
BE
100
COMMON EMITTER V =5V
CE
T =100 ℃ a
10
β=20
100
VOLTAGE V
(mV)
BEsat
800
600
400 0.1
100
10
T =25 ℃
a
1
1
BC846
h —— I
FE
C
COMMON EMITTER V =5V
BC846 BC847 BC848
BC846 BC847 BC848
DEVICE MARKING BC846A=1A; BC846B=1B; BC847A=1E; BC847B=1F; BC847C=1G; BC848A=1J; BC848B=1K: BC848C=1L
Value
80 50 30
65 45 30 6 0.1 200 150 -65-150
T =25℃ a
f T
——
I
C
100
10
1
10
50
COLLECTOR CURRENT I (mA) C
COLLECTOR POWER DISSIPATION P (mW)
C
0.1 0.1
250
1
10
20
REVERSE BIAS VOLTAGE V (V)
P —— T
C
a
200
150
100