半导体能带宽度的计算公式BANDGAP
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The optical data were analyzed at the near-absorption edge using the equation21
α=K(hv-E
) n/2/ hv (1)
g
where K and n are constants and E g is the band gap of the semiconductors. The value of n is equal to 1 for a direct band gap material. Apparently the plot of (αhv)2 versus hv (Figure 2b) gives E g for a direct allowed transition when the linear region is extrapolated to zero ordinate.
Subramanian, B; Sanjeeviraja, C.; Jayachandran, M. J. Crystal Growth 2002, 234, 421-426 (αhv)2＝K(hv-E
)
g
将紫谱图横坐标换为hv，纵坐标换为吸光度与hv的乘积
在Origin中横坐标和纵坐标的变化：
col(A)=1242.375/col(A)
col(B)=col(B)*col(B)*col(A)*col(A)