BC858贴片三极管规格书

贴片B系列三极管参数

NQ I NQ N N P I N N N N N N P I E C P I N I N N N N P I N N N N P P I N N N N I P N N N N P I DL
SOT143 SOD323 SOT343 SOT23 SOT23 SOT89 SOD323 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT89 SOD323 SOT23 SOT23 SOT89 SOD323 SOT23 SOD323 SOT23 SOT23 SOT23 SOT23 SOT89 SOD323 SOT23 SOT23 SOT23 SOT23 SOT223 SOT89 SOD323 SOT23 SOT23 SOT23 SOT23 SOD323 SOT223 SOT23 SOT23 SOT23 SOT23 SOT89 SOD323 SOT363
Mot Sie Phi Sie Sie Mot Phi Phi Sie Sie Phi Sie Sie Phi Sie Phi Phi Phi Phi Phi Phi Roh Roh Roh Mot Phi Phi
P P I GQ HQ N N N P GQ I HQ N I GQ N N I I N N N N N N I N
npn amp 80V 150mA npn hfe 160 12V 0.3W zener MMIC amp 9dB @1GHz MMIC amp 13 dB @1.8GHz 100v pnp comp BSS64 100v pnp comp BSS64 100v pnp comp BSS64 npn hfe 160 MMIC amp 11dB @1GHz 13V 0.3W zener MMIC amp 18 dB @1.8GHz low noise BCW61 15V 0.3W zener MMIC amp 16dB @1GHz BCX78, BCY78-vii BCY78-viii 16V 0.3W zener 18V 0.3W zener in SOD323 PNP 45V 0.1A hfe 160-260 BCY78-ix npn 50V 150mA min hfe 180 2SC2412K above 2SC2412K above gp pnp 45V 20V 0.3W zener pnp45V 0.1A hfe 210-340

BC856B中文资料

handbook, halfpage
500
MGT711
handbook, halfpage
hFE 400
(1)
− 1200 VBE (mV) − 1000 − 800
MGT712
(1)
300 − 600 200
(2)
(2)
− 400 100
(3)
(3)
− 200
0 − 10−2
− 10−1
−1
− 10
DISCRETE SEMICONDUCTORS
DATA SHEET
BC856; BC857; BC858 PNP general purpose transistors
Product speciﬁcation Supersedes data of 2003 Apr 09 2004 Jan 16
Philips Semiconductors
BC857B; VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C.
BC857B; VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C.
Fig.2
DC current gain as a function of collector current; typical values.
Fig.3
Base-emitter voltage as a function of collector current; typical values.
− 104 handbook, halfpage VCEsat (mV) − 103

BC857贴片三极管规格书

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate TransistorsBC856A, B TRANSISTOR (PNP)BC857A, B,CBC858A, B,CFEATURESy Ideally suited for automatic insertiony For Switching and AF Amplifier ApplicationsMAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter ValueUnit VCBO Collector-Base Voltage BC856 BC857 BC858-80-50 -30VV CEO Collector-Emitter Voltage BC856 BC857 BC858-65-45 -30VV EBO Emitter-Base Voltage -5 VI C Collector Current –Continuous -0.1 AP C Collector Power Dissipation 200 mWT J Junction Temperature 150 ℃T stg Storage Temperature -65-150 ℃DEVICE MARKINGBC856A=3A; BC856B=3B;BC857A=3E;BC857B=3F;BC857C=3G;BC858A=3J; BC858B=3K; BC858C=3LB,Jul,2013ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) ParameterSymbol Test conditions Min Max UnitCollector-base breakdown voltage BC856 BC857 BC858 V CBO I C = -10μA, I E =0 -80 -50 -30 V Collector-emitter breakdown voltage BC856 BC857 BC858 V CEO I C = -10mA, I B =0 -65 -45 -30 V Emitter-base breakdown voltageV EBO I E = -1μA, I C =0 -5 V Collector cut-off current BC856 BC857 BC858 I CBO V CB = -70 V ,I E =0 V CB = -45 V ,I E =0 V CB = -25 V ,I E =0 -0.1 μA Collector cut-off current BC856 BC857 BC858 I CEO V CE = -60 V ,I B =0 V CE = -40 V ,I B =0 V CE = -25 V ,I B =0 -0.1 μA Emitter cut-off currentI EBO V EB = -5 V , I C =0 -0.1 μA DC current gain BC856A, 857A,858A BC856B, 857B,858B BC857C,BC858C h FE V CE = -5V,I C = -2mA 125 220 420 250 475 800 Collector-emitter saturation voltageV CE (sat) I C =-100mA,I B = -5 mA -0.5 V Base-emitter saturation voltageV BE (sat) I C = -100mA, I B = -5mA -1.1 V Transition frequencyf T V CE = -5 V, I C = -10mA f=100MHz 100 MHz Collector capacitance C ob V CB =-10V, f=1MHz 4.5 pFB,Jul,2013101000255075100125150050100150200250101001000-0.1-1V CB / V EBC ob / C ib ——CA P A C I T AN C E C (p F )REVERSE VOLTAGE V R (V) T R A N S I T I O N F R E Q U E N C Y f T (M H z )COLLECTOR CURRENT I C (mA)P C —— T a C O L L E C T O R P O W E R D I S S I P A T I O N P C (m W )AMBIENT TEMPERATURE T a ()℃Static CharacteristicCO L L E C T O R C U R R E N T I C(m A )COLLECTOR-EMITTER VOLTAGE V CE (V)I C D C C U R R E N T G A I N h F E COLLECTOR CURRENT I C (mA)I C f T ——h FE ——I V BEsat —— B A S E -E M I T T E R S A T U R A T I O N V O L T A G E V B E s a t (V )COLLECTOR CURRENT I C (mA)-2BC856,BC857,BC858Typical CharacterisiticsV BEI C ——C O L L E C T O R C U R R E N T I C(m A )BASE-EMMITER VOLTAGE V BE (V)ICV CEsat ——CO L L E C T O R -E M I T T E R S A T U R A T I O N V O LTA GE V C Esat(V )COLLECTOR CURRENT I C (mA)B,Jul,2013 【南京南山半导体有限公司 — 长电三极管选型资料】The bottom gasketThe top gasket3000×1 PCS 3000×15 PCS Label on the Reel Label on the Inner Box Label on the Outer Box QA Label Seal the boxwith the tape Seal the boxwith the tape Stamp “EMPTY”on the empty box Inner Box: 210 mm × 208 mm ×203 mm Outer Box: 440 mm × 440 mm × 230 mm。

贴片三极管参数

贴片三极管型号查询直插封装的型号贴片的型号9011 1T 9012 2T 9013 J3 9014 J6 9015 M6 9016 Y6 9018 J8S8050 J3YS8550 2TY 8050 Y1 8550 Y2 2SA1015 BA2SC1815 HF2SC945 CR MMBT3904 1AM MMBT3906 2A MMBT2222 1P MMBT5401 2L MMBT5551 G1 MMBTA42 1D MMBTA92 2DBC807-16 5ABC807-25 5BBC807-40 5CBC817-16 6ABC817-25 6BBC817-40 6CBC846A 1A BC846B 1B BC847A 1E BC847B 1F BC847C 1G BC848A 1JBC848B 1K BC848C 1L BC856A 3A BC856B 3B BC857A 3E BC857B 3F BC858A 3JBC858B 3K BC858C 3L2SA733 CSUN2111 V1UN2112 V2UN2113 V3UN2211 V4UN2212 V5UN2213 V62SC3356 R232SC3838 AD2N7002 702我也补充点：用贴片三极管代码查找贴片三极管资料及其封装(24)Z3 SOT23 BZX84-C5V6 C 0.3W zener 5.6VZ4 SOD323 PDZ3.6B I 3.6V 0.4W zenerZ4 SOT23 BZX84-C6V2 zener.Z4 SOT23 BZX84-C6V2 C 0.3W zener 6.2VZ5 SOD323 PDZ3.9B I 3.9V 0.4W zenerZ5 SOT23 BZX84-C6V8 zener.Z5 SOT23 BZX84-C6V8 C 0.3W zener 6.8VZ6 SOD323 PDZ4.3B I 4.3V 0.4W zenerZ6 SOT23 BZX84-C7V5 zener.Z6 SOT23 BZX84-C7V5 C 0.3W zener 7.5VZ7 SOD323 PDZ4.7B I 4.7V 0.4W zenerZ7 SOT23 BZX84-C8V2 zener.Z7 SOT23 BZX84-C8V2 C 0.3W zener 8.2VZ8 SOD323 PDZ5.1B I 5.1V 0.4W zenerZ8 SOT23 BZX84-C9V1 zener.Z8 SOT23 BZX84-C9V1 C 0.3W zener 9.1VZ8 SOT23 SST308 JFETZ9 SOD323 PDZ5.6B I 5.6V 0.4W zenerZ9 SOT23 BZX84-C10 zener.Z9 SOT23 BZX84-C10 C 0.3W zener 10VZ9 SOT23 SST309 JFETZA SOD110 BZX284-C7V5 I 0.4W zener 7.5V 5% ZA SOD323 PDZ6.2B I 6.2V 0.4W zenerZB SOD110 BZX284-C8V2 I 0.4W zener 8.2V 5% ZB SOD323 PDZ6.8B I 6.8V 0.4W zenerZB SOT23 FMMT4123 NPNZB SOT23 FMMT4123 N 2N4123ZC SOD110 BZX284-C9V1 I 0.4W zener 9.1V 5% ZC SOD323 PDZ7.5B I 7.5V 0.4W zenerZC SOT23 FMMT4124 NPNZC SOT23 FMMT4124 N 2N4124ZC SOT23 MMBT4124 NPNZC SOT23 SMBT4124 NPNZC SOT23 YTS4124 NPNZD SOD110 BZX284-C10 I 0.4W zener 10V -5% ZD SOD323 PDZ8.2B I 8.2V 0.4W zenerZD SOT23 FMMT4125 PNPZD SOT23 FMMT4125 N 2N4125ZD SOT23 MMBT4125 PNPZD SOT23 MMBT4125 N 2N4125ZD SOT23 YTS4125 PNPZE SOD110 BZX284-C11 I 0.4W zener 11V -5% ZE SOD323 PDZ9.1B I 9.1V 0.4W zenerZE SOT23 FMMT4126 PNPZE SOT23 FMMT4126 N 2N4126ZE SOT23 MMBT4123 N 2N4123ZF SOD110 BZX284-C12 I 0.4W zener 12V -5% ZF SOD323 PDZ10B I 10V 0.4W zenerZG SOD110 BZX284-C13 I 0.4W zener 13V -5% ZG SOD323 PDZ11B I 11V 0.4W zenerZH SOD110 BZX284-C15 I 0.4W zener 15V -5% ZH SOD323 PDZ12B I 12V 0.4W zenerZHK 2W SMD SM2Z5V1 I 5.1V 2W zenerZHL 2W SMD SM2Z5V6 I 5.6V 2W zenerZHW 2W SMD SM2Z12 I 12V 2W zenerZI SOD110 BZX284-C16 I 0.4W zener 16V -5% ZJ SOD110 BZX284-C18 I 0.4W zener 18V -5% ZJ SOD323 PDZ13B I 13V 0.4W zenerZJF 2W SMD SM2Z18 I 18V 2W zenerZJQ 2W SMD SM2Z30 I 30V 2W zenerZK SOD110 BZX284-C20 I 0.4W zener 20V -5% ZK SOD323 PDZ15B I 15V 0.4W zenerZKR 2W SMD SM2Z150 I 150V 2W zenerZL SOD110 BZX284-C22 I 0.4W zener 22V -5% ZL SOD323 PDZ16B I 16V 0.4W zenerZM SOD110 BZX284-C24 I 0.4W zener 24V -5% ZM SOD323 PDZ18B I 18V 0.4W zenerZN SOD110 BZX284-C27 I 0.4W zener 27V -5% ZN SOD323 PDZ20B I 20V 0.4W zenerZO SOD110 BZX284-C30 I 0.4W zener 30V -5% ZP SOD100 BZX284-C33 I 0.4W zener 33V -5% ZP SOD323 PDZ22B I 22V 0.4W zenerZQ SC59 2PB601AQ NPNZQ SOD110 BZX284-C36 I 0.4W zener 36V -5% ZQ SOD323 PDZ24B I 24V 0.4W zenerZ-Q SOT323 2PC4081Q N gp npn hfe 120-270 ZR SC59 2PB601AR NPNZR SOD110 BZX284-C39 I 0.4W zener 39V -5% ZR SOD323 PDZ27B I 27V 0.4W zenerZR SOT323 MSD1819A N npn gp 50VZ-R SOT323 2PC4081R N gp npn hfe 180-390 ZS SC59 2PB601AS NPNZS SOD110 BZX284-C43 I 0.4W zener 43V -5% ZS SOD323 PDZ30B I 30V 0.4W zenerZ-S SOT323 2PC4081S N gp npn hfe 270-560 ZS1 SOT23 ZHCS1000 C schottky 1A 30VZS7 SOT23 ZHCS750 C schottky 0.75A 30VZT SOD110 BZX284-C47 I 0.4W zener 47V -5% ZT SOD323 PDZ33B I 33V 0.4W zenerZTA96 SOT223 PZTA96T1 PNPZtQ SOT323 2PC4081Q N gp npn hfe 120-270 ZtR SOT323 2PC4081R N gp npn hfe 180-390 ZtS SOT323 2PC4081S N gp npn hfe 270-560 ZU SOD110 BZX284-C51 I 0.4W zener 51V -5% ZU SOD323 PDZ36B I 36V 0.4W zenerZV SOD110 BZX284-C56 I 0.4W zener 56V -5% ZW SOD110 BZX284-C62 I 0.4W zener 62V -5% ZX SOD110 BZX284-C68 I 0.4W zener 68V -5% ZY SOD110 BZX284-C75 I 0.4W zener 75V -5%。

贴片C系列三极管参数

ห้องสมุดไป่ตู้
Device BB565 BAT165 KV1832E HSMS-2820 HSMS-282B HSMS-2821 BCW29 BCW29 BCW29 BFQ51C BCW30 BCW30 BCW30 BFQ32C HSMS-2822 HSMS-282C SST112 ZDC833A HSMS-2823 BFQ23C SMBT4126 SST113 BCW29R HSMS-2824 MMBA811C5 BCW30R HSMS-2825 ZDC834A MMBA811C6 MMBA811C7 HSMS-2827 HSMS-2828 BCF30 MMBA811C8 SST111 SST112 SST113 SST5638 SST5639 SST5640 SST4091 SST4092 SST4093 SST4856 SST4857
Leaded Equivalent/Data uhf varicap 2-20pF 40V 750mA sw Schottky uhf varicap 4-17pf HP2835 schottky HP2835 schottky HP2835 schottky BC178A BC178A BC178A pnp BFR90A complement BC178B BC178B BC178B pnp 4.5GHz 15V 100mA dual HP2835 schottky dual HP2835 schottky J112 analog sw n-ch jfet dual cc 28V varicap 15pF @2V dual HP2835 schottky pnp complement BFP91A 2N4126 J113 analog sw jfet BC178A dual HP2835 schottky 2N5086 pnp hfe 135-270 BC178B dual HP2835 schottky dual cc 28V varicap 47pF @2V 2N5086 pnp hfe 200-400 2N5086 pnp hfe 300-600 HP2835 ring quad HP2835 bridge quad BC559B 2N5086 pnp hfe 450-900 J111 n-ch fet J112 n-ch fet J113 n-ch fet 2N5638 2N5639 2N5640 2N4091 2N4092 2N4093 2N4856 2N4857

BC856贴片三极管规格书

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate TransistorsBC856A, B TRANSISTOR (PNP)BC857A, B,CBC858A, B,CFEATURESy Ideally suited for automatic insertiony For Switching and AF Amplifier ApplicationsMAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter ValueUnit VCBO Collector-Base Voltage BC856 BC857 BC858-80-50 -30VV CEO Collector-Emitter Voltage BC856 BC857 BC858-65-45 -30VV EBO Emitter-Base Voltage -5 VI C Collector Current –Continuous -0.1 AP C Collector Power Dissipation 200 mWT J Junction Temperature 150 ℃T stg Storage Temperature -65-150 ℃DEVICE MARKINGBC856A=3A; BC856B=3B;BC857A=3E;BC857B=3F;BC857C=3G;BC858A=3J; BC858B=3K; BC858C=3LB,Jul,2013ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) ParameterSymbol Test conditions Min Max UnitCollector-base breakdown voltage BC856 BC857 BC858 V CBO I C = -10μA, I E =0 -80 -50 -30 V Collector-emitter breakdown voltage BC856 BC857 BC858 V CEO I C = -10mA, I B =0 -65 -45 -30 V Emitter-base breakdown voltageV EBO I E = -1μA, I C =0 -5 V Collector cut-off current BC856 BC857 BC858 I CBO V CB = -70 V ,I E =0 V CB = -45 V ,I E =0 V CB = -25 V ,I E =0 -0.1 μA Collector cut-off current BC856 BC857 BC858 I CEO V CE = -60 V ,I B =0 V CE = -40 V ,I B =0 V CE = -25 V ,I B =0 -0.1 μA Emitter cut-off currentI EBO V EB = -5 V , I C =0 -0.1 μA DC current gain BC856A, 857A,858A BC856B, 857B,858B BC857C,BC858C h FE V CE = -5V,I C = -2mA 125 220 420 250 475 800 Collector-emitter saturation voltageV CE (sat) I C =-100mA,I B = -5 mA -0.5 V Base-emitter saturation voltageV BE (sat) I C = -100mA, I B = -5mA -1.1 V Transition frequencyf T V CE = -5 V, I C = -10mA f=100MHz 100 MHz Collector capacitance C ob V CB =-10V, f=1MHz 4.5 pFB,Jul,2013101000255075100125150050100150200250101001000-0.1-1V CB / V EBC ob / C ib ——CA P A C I T AN C E C (p F )REVERSE VOLTAGE V R (V) T R A N S I T I O N F R E Q U E N C Y f T (M H z )COLLECTOR CURRENT I C (mA)P C —— T a C O L L E C T O R P O W E R D I S S I P A T I O N P C (m W )AMBIENT TEMPERATURE T a ()℃Static CharacteristicCO L L E C T O R C U R R E N T I C(m A )COLLECTOR-EMITTER VOLTAGE V CE (V)I C D C C U R R E N T G A I N h F E COLLECTOR CURRENT I C (mA)I C f T ——h FE ——I V BEsat —— B A S E -E M I T T E R S A T U R A T I O N V O L T A G E V B E s a t (V )COLLECTOR CURRENT I C (mA)-2BC856,BC857,BC858Typical CharacterisiticsV BEI C ——C O L L E C T O R C U R R E N T I C(m A )BASE-EMMITER VOLTAGE V BE (V)ICV CEsat ——CO L L E C T O R -E M I T T E R S A T U R A T I O N V O LTA GE V C Esat(V )COLLECTOR CURRENT I C (mA)B,Jul,2013 【南京南山半导体有限公司 — 长电三极管选型资料】The bottom gasketThe top gasket3000×1 PCS 3000×15 PCS Label on the Reel Label on the Inner Box Label on the Outer Box QA Label Seal the boxwith the tape Seal the boxwith the tape Stamp “EMPTY”on the empty box Inner Box: 210 mm × 208 mm ×203 mm Outer Box: 440 mm × 440 mm × 230 mm。

常用贴片三极管丝印与型号对照表

9011 1T9012 2T9013 J39014 J69015 M69016 Y6 >>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>> 9018 J8S8050 J3YS8550 2TY8050 Y18550 Y22SA1015 BA2SC1815 HF2SC945 CR >>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>> MMBT3904 1AMMMBT3906 2AMMBT2222 1PMMBT5401 2LMMBT5551 G1MMBTA42 1DMMBTA92 2DBC807-16 5ABC807-25 5BBC807-40 5CBC817-16 6ABC817-25 6BBC817-40 6CBC846A 1ABC846B 1BBC847A 1EBC847B 1FBC847C 1GBC848A 1JBC848B 1KBC848C 1LBC856A 3ABC856B 3BBC857A 3EBC857B 3FBC858A 3JBC858B 3KBC858C 3L >>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>2SA733 CSUN2111 V1UN2112 V2UN2113 V3UN2211 V4UN2212 V5UN2213 V6 >>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>2SC3356 R232SC3838 AD2N7002 702 >>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>>> 2SC2062 W。