微电子器件实验5模版 联合仿真 nmos

南京邮电大学

课内实验报告

课程名：微电子器件设计

任课教师：

专业：微电子学

学号：

姓名：

2014/2015学年第2学期

南京邮电大学电子科学与工程学院

《微电子器件设计》课程实验第 5 次实验报告

实验内容及基本要求：

实验项目名称：MOS晶体管的工艺器件联合仿真

实验类型：验证

每组人数：1

实验内容及要求：

内容：采用Tsuprem4仿真软件对MOS晶体管进行工艺仿真，并采用MEDICI仿真软件对该MOS晶体管进行器件仿真。

要求：能够将工艺仿真软件得到的器件数据输出到某个文件中，并能在器件仿真中调用该文件。会画出并分析器件仿真结果。

实验考核办法：

实验结束要求写出实验报告。内容如下：

1、问题的分析与解答；

2、结果分析，比较不同器件结构参数对仿真结果的影响；

3、器件设计的进一步思考。

实验结果：（附后）

实验代码如下：

COMMENT Example 9B - TSUPREM-4/MEDICI Interface

COMMENT TSUPREM-4 Input File

OPTION DEVICE=PS

COMMENT Specify the mesh

LINE X LOCATION=0 SPACING=0.20

LINE X LOCATION=0.9 SPACING=0.06

LINE X LOCATION=1.8 SPACING=0.2

LINE Y LOCATION=0 SPACING=0.01

LINE Y LOCATION=0.1 SPACING=0.01

LINE Y LOCATION=0.5 SPACING=0.10

LINE Y LOCATION=1.5 SPACING=0.2

LINE Y LOCATION=3.0 SPACING=1.0

ELIMIN ROWS X.MIN=0.0 X.MAX=0.7 Y.MIN=0.0 Y.MAX=0.15 ELIMIN ROWS X.MIN=0.0 X.MAX=0.7 Y.MIN=0.06 Y.MAX=0.20 ELIMIN COL X.MIN=0.8 Y.MIN=1.0

COMMENT Initialize and plot mesh structure

INITIALIZ <100> BORON=1E15

SELECT TITLE=”TSUPREM-4: Initial Mesh”

PLOT.2D GRID

COMMENT Initial oxide

DEPOSIT OXIDE THICKNESS=0.03

COMMENT Models selection. For this simple example, the OED COMMENT model is not turned on (to reduce CPU time) METHOD VERTICAL

COMMENT P-well implant

IMPLANT BORON DOSE=3E13 ENERGY=45

COMMENT P-well drive

DIFFUSE TEMP=1100 TIME=500 DRYO2 PRESS=0.02

ETCH OXIDE ALL

COMMENT Pad oxidation

DIFFUSE TEMP=900 TIME=20 DRYO2

COMMENT Pad nitride

DEPOSIT NITRIDE THICKNESS=0.1

COMMENT Field oxidation

DIFFUSE TEMP=1000 TIME=360 WETO2

ETCH NITRIDE ALL

COMMENT Vt adjust implant

IMPLANT BORON ENERGY=40 DOSE=1E12

ETCH OXIDE ALL

COMMENT Gate oxidation

DIFFUSE TEMP=900 TIME=35 DRYO2

DEPOSIT POLYSILICON THICKNESS=0.3 DIVISIONS=4 COMMENT Poly and oxide etch

ETCH POLY LEFT P1.X=0.8 P1.Y=-0.5 P2.X=0.8 P2.Y=0.5

ETCH OXIDE LEFT P1.X=0.8 P1.Y=-0.5 P2.X=0.8 P2.Y=0.5 DEPOSIT OXIDE THICKNESS=0.02

COMMENT LDD implant

IMPLANT PHOS ENERGY=50 DOSE=5E13

COMMENT LTO

DEPOSIT OXIDE THICK=0.2 DIVISIONS=10

COMMENT Spacer etch

ETCH OXIDE DRY THICK=0.22

COMMENT S/D implant

IMPLANT ARSENIC ENERGY=100

DOSE=2E15 COMMENT Oxide etch

ETCH OXIDE LEFT P1.X=0.5

COMMENT S/D reoxidation

DIFFUSE TEMP=950 TIME=30 DRYO2 PRESS=0.02

COMMENT BPSG

DEPOSIT OXIDE THICK=0.3

ETCH OXIDE LEFT P1.X=0.3 P1.Y=-2 P2.Y=2

SELECT Z=LOG10(DOPING) TITLE=”TSUPREM-4: S/D Doping Profile”PLOT.1D X.V ALUE=0 LINE.TYP=5 BOUNDARY Y.MIN=14 Y.MAX=21 COMMENT Metallization

DEPOSIT ALUMINUM THICK=0.5 SPACES=3

ETCH ALUMINUM RIGHT P1.X=0.6 P2.X=0.55 P1.Y=-2 P2.Y=2 COMMENT Save simulation results

STRUCTUR REFLECT RIGHT

STRUCTUR MEDICI OUT.FILE=S4EX9BS

MEDICI程序：

TITLE Example 9B - TSUPREM-4/MEDICI Interface

COMMENT MEDICI Input File

COMMENT Simulation of NMOS device output characteristics COMMENT Read in simulation mesh

MESH IN.FILE=S4EX9BS TSUPREM4 ELEC.BOT POLY.ELEC Y.MAX=3 COMMENT Rename some electrodes from TSUPREM-4 to standard names RENAME ELECTR OLDNAME=1 NEWNAME=Source

RENAME ELECTR OLDNAME=1 NEWNAME=Source

COMMENT Save the mesh with the new electrode names

SA VE MESH OUT.FILE=MDEX9BM

CONTACT NUMBER=Gate N.POLY

MODELS CONMOB PRPMOB FLDMOB CONSRH AUGER BGN PLOT.2D GRID SCALE FILL

TITLE=Structure from TSUPREM-4”

PLOT.1D DOPING LOG X.START=0 X.END=0 Y.START=0 Y.END=2

+ POINTS BOT=1E14 TOP=1E21 TITLE=”S/D Profile”

PLOT.1D DOPING LOG X.START=1.8 X.END=1.8 Y.START=0 Y.END=2 + POINTS BOT=1E14 TOP=1E19 TITLE=”Channel Profile”

PLOT.2D BOUND SCALE FILL L.ELEC=-1 TITLE=Impurity Contours”CONTOUR DOPING LOG MIN=14 MAX=20 DEL=1 COLOR=2 CONTOUR DOPING LOG MIN=-20 MAX=-14 DEL=1 COLOR=1 LINE=2 COMMENT Simulate a drain curve with Vg=2v

SYMB CARR=0

METHOD ICCG DAMPED

SOLVE V(Gate)=2

SYMB CARR=1

NEWTON ELECTRON LOG OUT.FILE=MDEX9BI