微电子器件实验5模版 联合仿真 nmos

南京邮电大学
课内实验报告
课程名：微电子器件设计
任课教师：
专业：微电子学
学号：
姓名：
2014/2015学年第2学期
南京邮电大学电子科学与工程学院
《微电子器件设计》课程实验第 5 次实验报告
实验内容及基本要求：
实验项目名称：MOS晶体管的工艺器件联合仿真
实验类型：验证
每组人数：1
实验内容及要求：
内容：采用Tsuprem4仿真软件对MOS晶体管进行工艺仿真，并采用MEDICI仿真软件对该MOS晶体管进行器件仿真。

要求：能够将工艺仿真软件得到的器件数据输出到某个文件中，并能在器件仿真中调用该文件。

会画出并分析器件仿真结果。

实验考核办法：
实验结束要求写出实验报告。

内容如下：
1、问题的分析与解答；
2、结果分析，比较不同器件结构参数对仿真结果的影响；
3、器件设计的进一步思考。

实验结果：（附后）
实验代码如下：
COMMENT Example 9B - TSUPREM-4/MEDICI Interface
COMMENT TSUPREM-4 Input File
OPTION DEVICE=PS
COMMENT Specify the mesh
LINE X LOCATION=0 SPACING=0.20
LINE X LOCATION=0.9 SPACING=0.06
LINE X LOCATION=1.8 SPACING=0.2
LINE Y LOCATION=0 SPACING=0.01
LINE Y LOCATION=0.1 SPACING=0.01
LINE Y LOCATION=0.5 SPACING=0.10
LINE Y LOCATION=1.5 SPACING=0.2
LINE Y LOCATION=3.0 SPACING=1.0
ELIMIN ROWS X.MIN=0.0 X.MAX=0.7 Y.MIN=0.0 Y.MAX=0.15 ELIMIN ROWS X.MIN=0.0 X.MAX=0.7 Y.MIN=0.06 Y.MAX=0.20 ELIMIN COL X.MIN=0.8 Y.MIN=1.0
COMMENT Initialize and plot mesh structure
INITIALIZ <100> BORON=1E15
SELECT TITLE=”TSUPREM-4: Initial Mesh”
PLOT.2D GRID
COMMENT Initial oxide
DEPOSIT OXIDE THICKNESS=0.03
COMMENT Models selection. For this simple example, the OED COMMENT model is not turned on (to reduce CPU time) METHOD VERTICAL
COMMENT P-well implant
IMPLANT BORON DOSE=3E13 ENERGY=45
COMMENT P-well drive
DIFFUSE TEMP=1100 TIME=500 DRYO2 PRESS=0.02
ETCH OXIDE ALL
COMMENT Pad oxidation
DIFFUSE TEMP=900 TIME=20 DRYO2
COMMENT Pad nitride
DEPOSIT NITRIDE THICKNESS=0.1
COMMENT Field oxidation
DIFFUSE TEMP=1000 TIME=360 WETO2
ETCH NITRIDE ALL
COMMENT Vt adjust implant
IMPLANT BORON ENERGY=40 DOSE=1E12
ETCH OXIDE ALL
COMMENT Gate oxidation
DIFFUSE TEMP=900 TIME=35 DRYO2
DEPOSIT POLYSILICON THICKNESS=0.3 DIVISIONS=4 COMMENT Poly and oxide etch
ETCH POLY LEFT P1.X=0.8 P1.Y=-0.5 P2.X=0.8 P2.Y=0.5
ETCH OXIDE LEFT P1.X=0.8 P1.Y=-0.5 P2.X=0.8 P2.Y=0.5 DEPOSIT OXIDE THICKNESS=0.02
COMMENT LDD implant
IMPLANT PHOS ENERGY=50 DOSE=5E13
COMMENT LTO
DEPOSIT OXIDE THICK=0.2 DIVISIONS=10
COMMENT Spacer etch
ETCH OXIDE DRY THICK=0.22
COMMENT S/D implant
IMPLANT ARSENIC ENERGY=100
DOSE=2E15 COMMENT Oxide etch
ETCH OXIDE LEFT P1.X=0.5
COMMENT S/D reoxidation
DIFFUSE TEMP=950 TIME=30 DRYO2 PRESS=0.02
COMMENT BPSG
DEPOSIT OXIDE THICK=0.3
ETCH OXIDE LEFT P1.X=0.3 P1.Y=-2 P2.Y=2
SELECT Z=LOG10(DOPING) TITLE=”TSUPREM-4: S/D Doping Profile”PLOT.1D X.V ALUE=0 LINE.TYP=5 BOUNDARY Y.MIN=14 Y.MAX=21 COMMENT Metallization
DEPOSIT ALUMINUM THICK=0.5 SPACES=3
ETCH ALUMINUM RIGHT P1.X=0.6 P2.X=0.55 P1.Y=-2 P2.Y=2 COMMENT Save simulation results
STRUCTUR REFLECT RIGHT
STRUCTUR MEDICI OUT.FILE=S4EX9BS
MEDICI程序：
TITLE Example 9B - TSUPREM-4/MEDICI Interface
COMMENT MEDICI Input File
COMMENT Simulation of NMOS device output characteristics COMMENT Read in simulation mesh
MESH IN.FILE=S4EX9BS TSUPREM4 ELEC.BOT POLY.ELEC Y.MAX=3 COMMENT Rename some electrodes from TSUPREM-4 to standard names RENAME ELECTR OLDNAME=1 NEWNAME=Source
RENAME ELECTR OLDNAME=1 NEWNAME=Source
COMMENT Save the mesh with the new electrode names
SA VE MESH OUT.FILE=MDEX9BM
CONTACT NUMBER=Gate N.POLY
MODELS CONMOB PRPMOB FLDMOB CONSRH AUGER BGN PLOT.2D GRID SCALE FILL
TITLE=Structure from TSUPREM-4”
PLOT.1D DOPING LOG X.START=0 X.END=0 Y.START=0 Y.END=2
+ POINTS BOT=1E14 TOP=1E21 TITLE=”S/D Profile”
PLOT.1D DOPING LOG X.START=1.8 X.END=1.8 Y.START=0 Y.END=2 + POINTS BOT=1E14 TOP=1E19 TITLE=”Channel Profile”
PLOT.2D BOUND SCALE FILL L.ELEC=-1 TITLE=Impurity Contours”CONTOUR DOPING LOG MIN=14 MAX=20 DEL=1 COLOR=2 CONTOUR DOPING LOG MIN=-20 MAX=-14 DEL=1 COLOR=1 LINE=2 COMMENT Simulate a drain curve with Vg=2v
SYMB CARR=0
METHOD ICCG DAMPED
SOLVE V(Gate)=2
SYMB CARR=1
NEWTON ELECTRON LOG OUT.FILE=MDEX9BI
SOLVE V(Drain)=0.0 ELEC=Drain VSTEP=0.1 NSTEP=2 SOLVE V(Drain)=0.5 ELEC=Drain VSTEP=0.5 NSTEP=5 COMMENT Plot results
PLOT.1D X.AXIS=V(Drain) Y.AXIS=I(Drain) TOP=2.2E-5 + TITLE=Ids vs. Vds” COLOR=2 POINTS
LABEL LABEL=”Vgs = 2V” COLOR=2
Medici仿真图如下：
思考题。