电化学沉积制备硒化铋纳米薄膜_李兴华

07-P-110
电化学沉积制备硒化铋纳米薄膜
李兴华，周 泊，朱俊杰
*
南京大学化学化工学院,生命分析化学教育部重点实验室，210093，南京
E-mail: jjzhu@
硒化铋是一种半导体材料，因为其特殊的光、电特性，适用于制作光学或光敏设备，以及现代
的热电设备以及装饰渡膜，低维材料在热电性质方面应比其块材料有更大的优势。

[1]在各种沉积方
法中用电沉积制作薄膜是一种简单易行且成本低的方法，它的成膜速度很容易通过电流密度和电沉
积电位大小来控制[2]。

本文在In 2O 3-SnO 2(ITO)透明导电玻璃上实现了分布均匀、形状规则的一维硒
化铋薄膜的合成，并得到最佳电位和最佳溶液浓度，对于在其它基底上沉积该材料具有指导性。

Fig 1. The XRD patterns of Bi 2Se 3 thin films by Fig 2. SEM image of Bi 2Se 3 thin films, the concentration of electrodeposition in different concentration electrolyte electrolyte=0.025M
关键词：硒化铋；电化学沉积；热电材料；ITO
参考文献：
[1] Pejova, Biljana; Grozdanov, Ivan; Tanuševski, Atanas Mater. Chem.&Phys . 2004, 83, 245.
[2] N.S.Yesugade, C.D.Lokhande, C.H.Bhosale. Thin Solid Films. 1995, 263, 145.
Electrodeposition of Bi 2Se 3 thin films
Xing-Hua Li, Bo Zhou, Jun-Jie Zhu*
School of Chemistry and Chemical Engineering, Key Laboratory of Analytical
Chemistry for Life Science, Nanjing University, 210093, Nanjing
Semiconducting Bi 2Se 3 thin films have been prepared on ITO from an aqueous acidic bath by a simple, inexpensive electrodeposition technique. The electrodeposition potentials for different bath compositions and concentrations of solutions have been estimated. It has been found that Bi(NO 3)3·5H 2O and Se with bath compositions in various volumetric proportions vary from 9:1 to 1:9.。