开关二极管LL4148规格书
LL4148_datasheet
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
4/98
LL4148
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol Forward Voltage at IF = 10 mA Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 °C Capacitance at VF = VR = 0 Voltage Rise when Switching ON tested with 50 mA Forward Pulses tp = 0.1 µs, Rise Time < 30 ns, fp = 5 to 100 kHz Reverse Recovery Time from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω Thermal Resistance Junction to Ambient Air Rectification Efficiency at f = 100 MHz, VRF = 2 V
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LL4148
Small Signal Diodes
1N4148(diotec)元件中文手册「EasyDatasheet」
2 有效,如果引线被防护持在环境温度下从壳体距离为5毫米
Gültig,W ENN死Anschlussdrähte是在5mm Abstand VOMGehäuse奥夫Umgebungstemperatur gehalten w erden
©德欧泰克半导体公司
http://w w w /
最大.功耗 最大. Verlustleistung
重复峰值反向电压
Periodische Spitzensperrspannung
玻璃盒子
Glasgehäuse 重量约. Gewicht约 等效SMD版 Äquvalente SMD-Ausführung
标准包装录音中弹药盒
在弹药,包装标准Lieferform gegurtet
200
50
1N4448
0.62...0.72
5
100
热阻结到环境空气
WärmewiderstandSperrschicht - umgebende拉夫特
1N4148, 1N4150, 1N4151, 1N4448
Kennwerte (T = 25°C)
泄漏电流
Sperrstrom
修订恢复时间
)
Sperrverzugszeit )
芯片中文手册,看全文,戳
1N4148, 1N4150, 1N4151, 1N4448
版本2012-07-03
Ø 1.9
62.5
3.9
Ø max 0.5
尺寸 - 马塞[毫米]
1N4148, 1N4150, 1N4151, 1N4448
超快开关硅平面二极管
Ultraschnelle硅 平 面 Dioden
[°C]
) )
FH1N4148(LL-34-DO-35)贴片式开关二极管规格书
ఎਈऔ!Switching DiodeSwitching Diode ఎਈऔFH1N41481DESCRIPTION & FEATURES 概述及特點Low forward voltage 低正向壓降Fast reverse recovery time 快恢復時間 Ultra High Speed Switching Application 超高速開關應用PIN ASSIGNMENT 引腳說明PIN NUMBER 引腳序號PIN NAME 管腳符號 LL-34/DO-35FUNCTION 功能 A 1 Anode C 2 CathodeLL-34DO-35Maximum Ratings&Thermal Characteristics (T a =25℃) 最大額定值及熱特性CHARACTERISTIC 特性參數 Symbol符號 Value 數值 Unit 單位Maximum Peak Repetitive Reverse Voltage最大反向峰值電壓V RRM 100 V Maximum RMS Voltage 反向電壓V RMS 75 V Voltage Rise when Switching ON Tested with 50mA Forward Pulses Tp=0.1s, Rise Time ＜30ns, fp=5 to 100KHzV FR 2.5 V Rectifier Current (average) Half Wave Rectification with Resist.Load At T A =25℃ andf ≥50Hz 半波整流電流 I O 150 mA Surge Forward Current at t ＜1s and T A =25℃I FSM 500 mA Power Dissipation at T A =25℃PTOT 500 mW Thermal Resistance Junction to ambient air 熱阻 R ΘJA0.35℃/mW Junction and Storage Temperature 結溫和儲存溫度T J ,T STG 175,-65~150℃ELECTRICAL CHARACTERISTICS 電特性(T A =25℃ unless otherwise noted 如無特殊說明，溫度為25℃)Characteristic 特性參數Symbol 符號 Test Condition 測試條件 Min 最小值TYPE 典型值 Max 最大值Unit單位Forward Voltage 正向電壓V F I F =10mA — — 1.0 V Reverse Voltage 反向電壓V RI R =100µA 75 — — V V R =20V — — 25 nAV R =75V — — 5 µA Reverse Voltage LeakageCurrent 反向漏電流I RV R =20V, Tj=150℃ — — 50 µATotal Capacitance 電容 C T V R =0,f = 1.0MHz — — 4.0 pF Reverse Recovery Time 反向恢復時間 t rr From IF=10mA toIR=1mA,VR=6V,R=100Ω— — 4 nSRectification Efficiency整流效率ηr f =100MHZ, VRF =2V 0.45 — — —。
LL4148开关二极管规格书
Notes: 1. 2. All dimensions are within DO213AC JEDEC standard. LL-34 polarity denoted by cathode band.
Page 3
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
Fast Switching Device (TRR <4.0 nS) LL-34 (Mini-MELF) Package Surface Device Type Mounting Hermetically Sealed Glass Compression Bonded Construction All External Surfaces Are Corrosion Resistant And Terminals Are Readily Solderable RoHS Compliant Matte Tin (Sn) Terminal Finish Color band Indicates Negative Polarity
f = 1MHz Ta = 25℃ 1.0
0.5
0.0 0 5 10 15 20 25 30
VR - Reverse Voltage [V]
Figure 1. Power Dissipation vs Ambient Temperature
Valid provided leads at a distance of 0.8mm from case are kept at ambient temperature
IN4148中文资料
DO - 35
1.0 (25.4) MIN.
.120 (3.0) .200 (5.1)
.060 (1.5) .090 (2.3) DIA.
1.0 (25.4) MIN.
.018 (0.46)
.022 (0.56) 外形尺寸:英寸 (毫米)
上海朝阳产业 CO., LTD.
IN4148
硅晶体结构 开关二极管
反向电压: 75V 正向电流: 150mA
工艺说明书
特性 •小玻璃结构确保高可靠性
• 快速开关 • 低泄露电流 • 高温焊接有保证
250oC/10S/9.5mm 引脚长度 at 5 lbs tension
机械数据
•两端引脚: 可软焊的镀金引脚通过 美国军用规格 202E, method 208C
翻译:小瓶盖
邮箱:zhzhchang@
博客: /zhzht19861011
nA
5
uA
反向电流 (VR=20V,TJ=100oC)
IR2
50
A
电容
(注 1)
Ct
4
pF
反向恢复时间
(注2)
IF
4
nS
热阻性 (与外界结合点) 适用于存储温度
注:
(注 3)
R(ja) TSTG,TJ
0.35 -55 +175
oC/mW
oC
1: VR=0V, f=1 MHz 2: IF=10mA to IR=1mA, VR=6V, RL=100 3: Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.
LL4148开关二极管PDF规格书
P tot
Power Dissipation: Ptot (mW)
400 800
700
300
600 500 0.9
200
400 0.8
300 100
200 100 0 0
0 0 25 100 150 Ambient Temperature: Ta ( C)
O
200
200 C
o
0.7 0 0 2 4 6 VR 8 10 V
®
Dated : 15/06/2009
LL4148
Leakage current versus junction temperature nA 10 4
5 2
LL 4148
10 3 IR
5 2
10 2
5 2
10
5
VR=20V
2
1 0 100 Tj 200 C
Symbol VRM VR IF(AV) IFSM Ptot Tj Tstg
Value 100 75 200 0.5 1 4 1) 500 175 - 65 to + 175
Unit V V mA A mW
O
Power Dissipation Junction Temperature Storage Temperature Range
Valid provided that electrodes are kept at ambient temperature
Relative capacitance versus reverse voltage
mW 1000 500 900
LL 4148
LL 4148
Tj=25 oC f=1MHz
1N4148WT快速开关二极管SOD-523规格书
200
Power Derating Curve
CAPACITANCE BETWEEN TERMINALS CT (pF)
1.1
(mW) POWER DISSIPATION
5 10 15 20
150
1.0
PD
100 0.9 50 0.8 0 0 0 25 50 75 100 125 150
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter Reverse voltage Reverse current Symbol V(BR) IR IR=1μA VR=75V VR=20V IF=1mA IF=10mA Forward voltage VF IF=50mA IF=150mA Total capacitance Reverse recovery time Ctot trr VR=0V,f=1MHz IF= IR =10mA, Irr=0.1*IR,RL=100Ω Test conditions Min 75 1 25 0.715 0.855 1 1.25 2 4 Typ Max Unit V µA nA V V V V pF ns
1n4148wt快速开关二极管sod523规格书
1N4148WT
FEATURES
FAST SWITCHING DIODE
SOD-523
Small Package Low Reverse Current Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion
ST LL4148 贴片规格书
at t = 1 ms
at t = 1 μs
IFSM
0.5
1
4
A
Power Dissipation Ptot 500 1) mW
Junction Temperature Tj 175 OC
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 15/06/2009
LL4148
Admissible power dissipation
versus ambient temperature
Dated : 15/06/2009
Valid provided that electrodes are kept at ambient
temperature
PTamb
VF
10 -1
1
10
210
310
LL 4148
iF
Forward characteristics
5
10 4
2
Rectification Efficiency
at f = 100 MHz, VRF = 2 V
ηV 0.45 --
1) Valid provided that electrodes are kept at ambient temperature.
~ ~ ~
2nF5K 60
Admissible repetitive peak forward current versus pulse duration
MEMORY存储芯片LL4148中文规格书
LL4148 — Small Signal Diode January 2016LL4148Small Signal DiodeOrdering InformationAbsolute Maximum Ratings (1), (2)Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T A = 25°C unless otherwise noted.Notes:1.These ratings are based on a maximum junction temperature of 200°C.2.These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations.Part NumberDevice Marking Package Packing Method LL4148Color Band Marking SOD-80 2L Tape and Reel, 7 inch Reel, 2500 pcs SymbolParameter Value Unit V RRMMaximum Repetitive Reverse Voltage 100V I F(AV)Average Rectified Forward Current 200mA I fRecurrent Peak Forward Current 500mA I FSMNon-Repetitive Peak Forward Surge Current Pulse Width = 1.0 s 1.0A Pulse Width = 1.0 μs 2.0T STGStorage Temperature Range -65 to +200°C T J Operating Junction Temperature Range -55 to +175°C COLOR BAND MARKING1ST BANDBlackThe 1st Band indicates the cathode bandSOD80Cathode BandElectrical CharacteristicsValues are at T A = 25°C unless otherwise noted.Symbol Parameter Conditions Min.Max.UnitV R Breakdown Voltage I R = 100 μA100V I R = 5.0 μA75V F Forward Voltage I F = 10 mA 1.0VI R Reverse Leakage V R = 20 V25nA V R = 20 V, T A = 150°C50μAC T Total Capacitance V R = 0, f = 1.0 MHz 4.0pFt rr Reverse Recovery Time I F = 10 mA, V R = 6.0 V (60 mA),I rr = 1.0 mA, R L = 100 Ω4.0ns。
丝印w1二极管参数
丝印w1二极管参数
丝印W1二极管通常指的是1N4148型号的二极管。
1N4148是一种快速开关二极管，常用于一般目的的快速开关和整流应用。
下面是关于1N4148二极管的一些参数：
1. 最大反向工作电压，1N4148二极管的最大反向工作电压为100V。
这意味着在正向工作时，它可以承受高达100V的反向电压，超过这个电压可能会损坏二极管。
2. 最大连续正向电流，1N4148二极管的最大连续正向电流为300mA。
这意味着在正向工作时，它可以承受高达300mA的电流，超过这个电流可能会损坏二极管。
3. 正向压降，1N4148二极管的正向压降在标准条件下约为
0.7V。
这意味着在正向工作时，它需要至少0.7V的电压才能开始导通。
4. 封装类型，1N4148二极管通常采用小型塑料封装，方便安装和使用。
总的来说，1N4148二极管是一种常用的快速开关二极管，具有较高的反向工作电压和正向电流能力，适用于多种电子电路应用。
希望这些信息能够满足你的需求。
贴片开关二极管 1N4148W SOD-123 规格书推荐
Note 1:Device mounted on 1''x1'' FR4 PCB,1oz single-side copper.
1
D,Nov,2017
ELECTRICAL CHARACTERISTICS
Electrical Ratings @Ta=25℃
Parameter Symbol VF1 Forward voltage VF2 VF3 VF4 Reverse current Capacitance between terminals Reverse recovery time IR1 IR2 CT trr Min Typ Max 0.715 0.855 1.0 1.25 1 25 2 4 Unit V V V V μA nA pF ns Conditions IF=1mA IF=10mA IF=50mA IF=150mA VR=75V VR=20V VR=0V,f=1MHz IF=IR=10mA Irr=0.1XIR,RL=100Ω
Parameter Non-Repetitive Peak Reverse Voltage Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current Average Rectified Output Current Non-Repetitive Peak Forward Surge Current @ t=8.3ms Power Dissipation 1N4148W BAV16W Thermal Resistance from Junction to Ambient(Note 1) Junction Temperature Storage Temperature Symbol VRM VRRM VRWM VR VR(RMS) IFM IO IFSM Pd RθJA Tj TSTG 71 300 150 2.0 350 400 250 150 -55~+150 V mA mA A mW ℃/W ℃ ℃ 100 V Limit 100 Unit V
FOSAN富信电子 二级管 LL4148-产品规格书
安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.LL4148LL-34High Speed Switching Diode 高速开关二极管▉Features 特点Characteristic 特性参数Symbol 符号Value 额定值Unit 单位Forward Current 正向电流I F 200mA Peak Forward Surge Current 峰值正向浪涌电流I FSM 500@1S 1000@1mS 4000@1µSmA Reverse Voltage 反向电压V R 75V Peak Reverse V oltage 峰值反向电压V RM 100V Power dissipation 耗散功率P D 500(Ta=25℃)mWJunction and Storage Temperature 结温和储藏温度T J ,T stg-65to+175℃■Electrical Characteristics 电特性(TA =25℃unless otherwise noted 如无特殊说明，温度为25℃)Characteristic 特性参数Symbol 符号Min 最小值Max 最大值Unit 单位Reverse Breakdown Voltage 反向击穿电压(I R =100uA)V (BR)100—VReverse Leakage Current 反向漏电流(V R =20V)(V R =75V)(V R =20V ，T J =150℃)I R —25550nA µA µA Forward V oltage 正向电压(I F =10mA)V F —1V Diode Capacitance 二极管电容(V R =0V,f=1MHz)C D—4pF Reverse Recovery Time 反向恢复时间T rr—4nSANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.LL4148■Typical Characteristic Curve典型特性曲线Figure1:Forward Characteristics Figure2:Leakage CurrentFigure3:Capacitance Characteristics Figure4：Power Derating CurveANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.LL4148■Dimension外形封装尺寸。
PMLL4148L中文资料
5. Limiting values
Marking code [1] marking band marking band
9397 750 14606
Product data sheet
Table 6: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
time
[1] -
-
VFR
forward recovery
voltage
[2] -
-
[1] When switched from IF = 10 mA to IR = 60 mA; RL = 100 Ω; measured at IR = 1 mA [2] When switched from IF = 50 mA; tr = 20 ns
IF = 5 mA
IR
reverse current VR = 20 V
VR = 20 V; Tj = 150 °C
PMLL4448
VR = 20 V; Tj = 100 °C
Cd
diode
VR = 0 V; f = 1 MHz
capacitance
-
-
-
-
620
-
-
-
-
-
-
-
-
-
trr
reverse recovery
(3)
0
0
100
Tamb (°C)
200
FR4 PCB; standard footprint
Fig 1. Maximum permissible forward current as a function of ambient temperature