DIODES贴片肖特基二极管BAS40选型手册

合集下载

DIODES超高速整流二极管PDU420选型手册

DIODES超高速整流二极管PDU420选型手册
Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave Superimposed on Rated Load
Symbol VRRM VRWM VR VR(RMS) IO
IFSM
Value
200
141 4
125
Thermal Characteristics
Ordering Information (Note 6)
Device PDU420-13
Packaging PowerDIä5
Notes: 6. For Packaging Details, go to our website at /datasheets/ap02007.pdf.
Max
A
1.05
1.15
A2 0.33 0.43
b1 0.80 0.99
b2 1.70 1.88
D
3.90
4.05
D2
3.05 NOM
E
6.40
6.60
eБайду номын сангаас
1.84 NOM
E1 5.30 5.45
E2
3.55 NOM
L
0.75
0.95
L1 0.50 0.65
W 1.20 1.50
trr +0.5A
(+)
50V DC Approx (-)
Device Under Test
(-)
Pulse Generator (Note 2)
Oscilloscope
(+)
(Note 1)
0A -0.25A
-1.0A
Set time base for 50/100 ns/cm

肖特基二极管参数表

肖特基二极管参数表

肖特基二极管(Schottky Diode)是一种具有低功耗、大电流、超高速特性的半导体器件。

它不是利用P型半导体与N型半导体接触形成PN结原理制作的,而是利用金属与半导体接触形成的金属半导体结原理制作的。

因此,SBD也称为金属半导体(接触)二极管或表面势垒二极管,它是一种热载流子二极管。

肖特基二极管的参数表通常包括以下内容:1. VF(Forward Voltage Drop):正向压降。

这是肖特基二极管在正向导通时,从阳极到阴极的电压降。

通常情况下,VF的值较低,大约在0.4V到0.7V之间。

2. VFM(Maximum Forward Voltage Drop):最大正向压降。

这是设备在正向工作时所能承受的最大电压。

VFM决定了二极管是否能在特定电路中进行可靠的操作。

3. VBR(Reverse Breakdown Voltage):反向击穿电压。

这是肖特基二极管在反向偏置时,能够承受的最大电压,超过这个电压会导致器件损坏。

4. VRRM(Peak Reverse Voltage):峰值反向电压。

这是设备在反向工作时所能承受的最大电压。

VRRM通常高于VBR,以确保器件在正常操作中不会因反向电压而损坏。

5. VRsM(Non-Repetitive Peak Reverse Voltage):非反复峰值反向电压。

这是设备在非反复模式(如单次脉冲)下所能承受的最大反向电压。

6. VRwM(Reverse Working Voltage):反向工作电压。

这是设备在反向偏置时能够安全工作的电压。

7. Vpc(Maximum DC Blocking Voltage):最大直流截止电压。

这是肖特基二极管能够承受的最大直流电压,用于防止器件因过压而损坏。

8. Trr(Reverse Recovery Time):反向恢复时间。

这是肖特基二极管从反向偏置到正向偏置的恢复时间,通常很短,大约在几纳秒到几十纳秒之间。

FOSAN富信电子 二级管 BAS40-产品规格书

FOSAN富信电子 二级管 BAS40-产品规格书

安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.BAS40/-04/-05/-06SOT-23Schottky Barrier Diode 肖特基势垒二极管▉Internal Configuration&DeviceMarking 内部结构与产品打标Type 型号BAS40BAS40-04BAS40-05BAS40-06Pin 管脚Mark 打标43444546▉AbsoluteMaximum Ratings 最大额定值Characteristic 特性参数Symbol 符号Rat 额定值Unit 单位Peak Reverse V oltage 反向峰值电压V RRM 40V Reverse Work Voltage 反向工作电压V RWMDC Reverse Voltage 直流反向电压V R Forward Work Current 正向工作电流I F (I O )200mA Peak Forward Current 正向峰值电流I FM600mA Power dissipation 耗散功率P D (Ta=25℃)200mW Thermal Resistance J-A 结到环境热阻R θJA 625℃/WJunction and Storage Temperature 结温和储藏温度T J ,T stg-55to+150℃■Electrical Characteristics 电特性(T A =25℃unless otherwise noted 如无特殊说明,温度为25℃)Characteristic 特性参数Symbol 符号Min 最小值Max 最大值Unit 单位Reverse Breakdown Voltage 反向击穿电压(I R =10µA)V (BR)40—V Reverse Leakage Current 反向漏电流(V R =30V)I R —200nA Forward V oltage(I F =1mA)正向电压(I F =40mA)V F —0.381V Diode Capacitance 二极管电容(V R =0V,f=1MHz)C T—5pF Reverse Recovery Time 反向恢复时间T rr—5nSANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.BAS40/-04/-05/-06■Typical Characteristic Curve典型特性曲线ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.BAS40/-04/-05/-06■Dimension外形封装尺寸Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.1500.0350.045A10.0000.1000.0000.004A20.900 1.0500.0350.041b 0.3000.5000.0120.020c 0.0800.1500.0030.006D 2.800 3.0000.1100.118E 1.200 1.4000.0500.055E1 2.2502.5500.0890.100e 0.950TYP0.037TYPe1 1.8002.0000.0710.079L 0.550REF0.022REFL10.3000.5000.0120.020θ0o8o 0o8o。

肖特基二极管型号大全及选择

肖特基二极管型号大全及选择

肖特基二极管型号大全及选择
通过市场调查,不难发现采购到假冒翻新的二极管时有发生. 一些不法商家利用翻新件充当全新器件;或通过更改印字,以小芯片充当大芯片卖等等. ..后果很严重,有时甚至是危及生命安全. 最近充电宝事件,已广泛引起人们的关注和担心! 在这里,凌讯电子愿意为您解决困扰. 教您如何检验元器件的好坏!以肖特基二极管为例:
(一)看外观:
1. 印字: 现在肖特基二极管都是激光印字, 具有无毒,环保,字体清晰,永不磨损的特点. 油印的翻新机率大,有毒,不环保.建议不用.
2. 脚位: 标准器件脚长,都是有一定标准的.请参考资料. 如果脚偏短,有可能是二次打磨.建议不用.
3. 镀锡: 目前肖特基二极管分两种: 亮脚(国产较多)和粉脚(国外较多)各有优势. 亮脚上锡快,储存时间长; 粉脚上锡非常快,但易氧化.如果外观已氧化,建议不用.
(二)测试:
1. 芯片: 防止以小充大.尺寸是直观表现.
2. 参数: 正规厂家都是会提供参数的. 测试参数的准确性是非常重要的.是一个产品好坏的直观体现.。

肖特基二极管手册

肖特基二极管手册

肖特基二极管手册肖特基二极管手册是一本介绍肖特基二极管的基础知识、特点、应用等方面的工具书,对于电子工程师和研究人员来说,是一本必不可少的参考书。

以下是本文对肖特基二极管手册内容进行的简要介绍。

第一部分:基础知识在这一部分中,手册介绍了肖特基二极管的基本原理,即该器件利用了金属-半导体接触的本质非对称性质,实现了非常优秀的整流效果。

手册中详细描述了金属-半导体界面的特殊结构和电学性质,以及该结构所带来的整流特性。

同时,肖特基二极管与传统的 P-N 结二极管相比,有着极高的速度和响应时间,以及低的噪声水平。

手册详细分析了这些特殊的性质,并且提供了实验数据和例子,以便读者更好地理解这些特点。

第二部分:特点和规格这一部分介绍了肖特基二极管的主要特征和规格参数。

手册详细解释了器件的最大可承受电压、额定电流和最大功率等特点,同时还介绍了其内部的各种特殊设计。

手册提供了非常详细和全面的指导和介绍,帮助读者了解如何选择和应用不同类型的肖特基二极管。

第三部分:应用在应用部分,手册介绍了肖特基二极管的实际应用和使用场景。

以 DC/DC 变换器、交流/直流转换器、折叠、调制和开关电源等器件为例,手册提供了一些不同应用领域的例子,说明了如何在特定的应用中选择和使用肖特基二极管。

同时,手册还介绍了一些实验和测试技术,以便读者更好地理解和掌握器件的特性和表现。

手册提供了多种实验方案和测试数据,帮助读者进行自己的实验和测试。

总结肖特基二极管手册是一本权威、全面、实用的工具书。

其中包含了肖特基二极管的基本知识、主要特点和规格、应用和实验方案等方面的信息,是一本值得电子工程师和研究人员深入阅读和掌握的参考书。

BAS40-04LT1G;BAS40-04LT1;中文规格书,Datasheet资料

BAS40-04LT1G;BAS40-04LT1;中文规格书,Datasheet资料

0.8 0.031
mm Ǔ ǒinches
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

bas 40中文资料

bas 40中文资料

2
Oct-07-1999
元器件交易网
BAS 40 ...
Forward current IF = f (VF )
TA = 25°C
10 2
BAS 40... EHB00038
Reverse current IR = f (VR)
TA = Parameter
BAS 40... EHB00039
ΙF
3
Oct-07-1999
元器件交易网
BAS 40 ...
Forward current IF = f (TA *;TS ) * Package mounted on epoxy
200
BAS 40... EHB00150
ΙF
mA 160 140 120 100 80 TA 60 40 20 0 0 50 100 ˚C 150 TS
Pin Configuration 1=A 1 = A1 1 = A1 1 = C1 2 n.c. 2 = C2 2 = A2 2 = C2
Package SOT-23 SOT-23 SOT-23 SOT-23
Maximum Ratings Parameter Diode reverse voltage Forward current Surge forward current, t ≤ 10 ms Total power dissipation BAS 40, TS ≤ 81°C BAS 40-04, BAS 40-05, BAS 40-06 , TS ≤ 55°C Junction temperature Operating temperature range Storage temperature Thermal Resistance Junction - ambient 1) BAS 40 Junction - ambient BAS 40-04 ... Junction - soldering point BAS 40 Junction - soldering point BAS 40-04 ...

肖特基二极管》

肖特基二极管》

肖特基二极管百科名片肖特基二极管是以其发明人肖特基博士(Schottky)命名的,SBD是肖特基势垒二极管(Sc hottkyBarrierDiode,缩写成SBD)的简称。

SBD不是利用P型半导体与N型半导体接触形成PN结原理制作的,而是利用金属与半导体接触形成的金属-半导体结原理制作的。

因此,S BD也称为金属-半导体(接触)二极管或表面势垒二极管,它是一种热载流子二极管。

目录[隐藏]简介原理优点结构封装特点应用其它简介原理优点结构封装特点应用其它[编辑本段]简介肖特基二极管是以其发明人肖特基博士(Schottky)命名的,SBD是肖特基势垒二极管肖特基二极管结构原理图(SchottkyBarrierDiode,缩写成SBD)的简称。

SBD不是利用P型半导体与N型半导体接触形成PN结原理制作的,而是利用金属与半导体接触形成的金属-半导体结原理制作的。

因此,SBD也称为金属-半导体(接触)二极管或表面势垒二极管,它是一种热载流子二极管。

是近年来问世的低功耗、大电流、超高速半导体器件。

其反向恢复时间极短(可以小到几纳秒),正向导通压降仅0.4V左右,而整流电流却可达到几千毫安。

这些优良特性是快恢复二极管所无法比拟的。

中、小功率肖特基整流二极管大多采用封装形式。

[编辑本段]原理肖特基二极管是贵金属(金、银、铝、铂等)A为正极,以N型半导体B为负极,利用二者接触面上形成的势垒具有整流特性而制成的金属-半导体器件。

因为N型半导体中存在着大量的电子,贵金属中仅有极少量的自由电子,所以电子便从浓度高的B中向浓度低的A中扩散。

显然,金属A中没有空穴,也就不存在空穴自A向B的扩散运动。

随着电子不断从B扩散到A,B表面电子浓度逐渐降低,表面电中性被破坏,于是就形成势垒,其电场方向为B→A。

但在该电场作用之下,A中的电子也会产生从A→B的漂移运动,从而消弱了由于扩散运动而形成的电场。

当建立起一定宽度的空间电荷区后,电场引起的电子漂移运动和浓度不同引起的电子扩散运动达到相对的平衡,便形成了肖特基势垒。

BAS40L中文资料

BAS40L中文资料

Notes 1. Including plating thickness 2. The marking bar indicates the cathode OUTLINE VERSION SOD882 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 03-04-16 03-04-17
2003 May 20
5
元器件交易网
Philips Semiconductors
Product specification
Schottky barrier diode
DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION
Bottom view
MDB391
BAS40L
DESCRIPTION Planar Schottky barrier diode with an integrated guard ring for stress protection. Encapsulated in a SOD882 leadless ultra small plastic package.
1 10 1
1
10
IF (mA)
102
0 0 10 20 VR (V) 30
f = 10 kHz.
f = 1 MHz; Tamb = 25 °C.
Fig.4
Differential forward resistance as a function of forward current; typical values.

BAS40-04 丝印44 肖特基二极管选型手册

BAS40-04 丝印44 肖特基二极管选型手册

回访记录
□已联系确认 日期:
□已建议执行 日期:
□未发送但已下单 日期:
□已发送样品 日期:
□客户已签收 日期:
第1页共1页
0.01 1E-3
0
0.25 0.20 0.15 0.10 0.05 0.00
0
Reverse Characteristics
T =100℃ a
T =25℃ a
10
20
30
40
REVERSE VOLTAGE V (V) R
Power Derating Curve
25
50
75
100
125
AMBIENT TEMPERATURE T (℃) a
Symbol
Test conditions
Min
Reverse breakdown voltage
V(BR)
IR= 10μA
40
Reverse voltage leakage current Forward voltage Diode capacitance Reverse recovery time
Symbol
VRRM VRWM
VR IFM PD RθJA TJ TSTG
Limit
40
200 200 500 125 -55~+150
Unit
V
mA mW ℃/W ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
CAPACITANCE BETWEEN TERMINALS C (pF)
T
D,Jul,2013

肖特基二极管

肖特基二极管

肖特基二极管肖特基二极管是以其发明人肖特基博士(Schottky)命名的,SBD是肖特基势垒二极管(SchottkyBarrierDiode,缩写成SBD)的简称。

SBD不是利用P型半导体与N型半导体接触形成PN结原理制作的,而是利用金属与半导体接触形成的金属-半导体结原理制作的。

因此,SBD也称为金属-半导体(接触)二极管或表面势垒二极管,它是一种热载流子二极管。

目录肖特基二极管是以其发明人肖特基博士(Schottky)命名的,SBD是肖特基势垒二极管肖特基二极管结构原理图(SchottkyBarrierDiode,缩写成SBD)的简称。

SBD不是利用P型半导体与N型半导体接触形成PN结原理制作的,而是利用金属与半导体接触形成的金属-半导体结原理制作的。

因此,SBD也称为金属-半导体(接触)二极管或表面势垒二极管,它是一种热载流子二极管。

是近年来问世的低功耗、大电流、超高速半导体器件。

其反向恢复时间极短(可以小到几纳秒),正向导通压降仅0.4V左右,而整流电流却可达到几千毫安。

这些优良特性是快恢复二极管所无法比拟的。

中、小功率肖特基整流二极管大多采用封装形式。

编辑本段原理肖特基二极管是贵金属(金、银、铝、铂等)A为正极,以N型半导体B为负极,利用二者接触面上形成的势垒具有整流特性而制成的金属-半导体器件。

因为N型半导体中存在着大量的电子,贵金属中仅有极少量的自由电子,所以电子便从浓度高的B中向浓度低的A中扩散。

显然,金属A 中没有空穴,也就不存在空穴自A向B的扩散运动。

随着电子不断从B扩散到A,B表面电子浓度逐渐降低,表面电中性被破坏,于是就形成势垒,其电场方向为B→A。

但在该电场作用之下,A中的电子也会产生从A→B的漂移运动,从而消弱了由于扩散运动而形成的电场。

当建立起一定宽度的空间电荷区后,电场引起的电子漂移运动和浓度不同引起的电子扩散运动达到相对的平衡,便形成了肖特基势垒。

肖特基二极管典型的肖特基整流管的内部电路结构是以N型半导体为基片,在上面形成用砷作掺杂剂的N-外延层。

  1. 1、下载文档前请自行甄别文档内容的完整性,平台不提供额外的编辑、内容补充、找答案等附加服务。
  2. 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
  3. 3、如文档侵犯您的权益,请联系客服反馈,我们会尽快为您处理(人工客服工作时间:9:00-18:30)。

SURFACE MOUNT SCHOTTKY BARRIER DIODEProduct Summary @T A = +25°CV RRM (V) I O (mA) V Fmax (V)I Rmax (μA)40 200 1.0 0.2Description200mA surface mount Schottky Barrier Diode in SOT23 package, offers low forward voltage drop and fast switching capability, designed with PN Junction Guard Ring for Transient and ESD Protection, totally lead-free finish and RoHS compliant, ”Green” device.Features and Benefits∙Low Forward Voltage Drop∙ Fast Switching ∙ PN Junction Guard Ring for Transient and ESD Protection∙ Lead-Free Finish; RoHS Compliant (Notes 1 & 2) ∙ Halogen and Antimony Free. “Green” Device (Note 3) ∙Qualified to AEC-Q101 Standards for High ReliabilityMechanical Data∙ Case: SOT23 ∙ Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0∙ Moisture Sensitivity: Level 1 per J-STD-020D∙ Terminals: Solderable per MIL-STD-202, Method 208 ∙ Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe).∙ Polarity: See Diagrams Below ∙ Weight: 0.008 grams (approximate)Top View BAS40 BAS40-04 BAS40-05BAS40-06Ordering Information (Note 4 & 5)Part NumberCase Packaging BAS40-7-F / BAS40Q-7-F SOT23 3000/Tape & Reel BAS40-04-7-F / BAS40-04Q-7-F SOT23 3000/Tape & Reel BAS40-05-7-F / BAS40-05Q-7-F SOT23 3000/Tape & Reel BAS40-06-7-F / BAS40-06Q-7-F SOT23 3000/Tape & Reel BAS40-13-F / BAS40Q-13-F SOT23 10000/Tape & Reel BAS40-04-13-F / BAS40-04Q-13-F SOT23 10000/Tape & Reel BAS40-05-13-F / BAS40-05Q-13-F SOT23 10000/Tape & Reel BAS40-06-13-F / BAS40-06Q-13-FSOT23 10000/Tape & ReelNotes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.2. See /quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.4. For packaging details, go to our website at /products/packages.html.5. Products manufactured with Date Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Products manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb 2O 3 Fire Retardants.e3Marking InformationDate Code Key Year 1999 2000 2001 2002 2003 20042005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 Code K L MN P R S T U V W X Y Z A B CMonth Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N DMaximum Ratings (@T A = +25°C, unless otherwise specified.)CharacteristicSymbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking VoltageV RRM V RWM V R 40 V Forward Continuous Current (Note 6) I FM 200 mA Forward Surge Current (Note 6) @ t < 1.0sI FSM600mAThermal CharacteristicsCharacteristicSymbol Value Unit Power Dissipation (Note 6)P D 350 mW Thermal Resistance, Junction to Ambient Air (Note 6) R θJA 357 °C/W Operating Temperature Range T J -55 to +125 °C Storage Temperature Range T STG-65 to +150°CElectrical Characteristics (@T A = +25°C, unless otherwise specified.)CharacteristicSymbol Min Typ Max Unit Test ConditionReverse Breakdown Voltage (Note 7) V (BR)R 40 − − V I R = 10µAForward VoltageV F − − 380 1000 mV t p < 300µs, I F = 1.0mA t p < 300µs, I F = 40mA Reverse Leakage Current (Note 7) I R − 20 200 nA t p < 300µs, V R = 30V Total Capacitance C T − 4.0 5.0 pF V R = 0V, f =1.0MHzReverse Recovery Timet rr−−5.0nsI F = I R = 10mA to I R = 1.0mA, R L = 100ΩNotes: 6. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at /datasheets/ap02001.pdf. 7. Short duration pulse test used to minimize self-heating effect.xxx = Product Type Marking CodeK43 = BAS40 K44 = BAS40-04 K45 = BAS40-05 K46 = BAS40-06YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) Y M = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y = Year (ex: A = 2013) M = Month (ex: 9 = September)Chengdu A/T SiteShanghai A/T SiteT , AMBIENT TEMPERATURE (ºC)Figure 1 Power Derating Curve, T otal Package A P , P O W E R D I S S I P A T I O N (m W )D 01002003004000.010.110.0001I , I N S T A N T A N E O U S F O R W A R D C U R R E N T (A )F V , INSTANTANEOUS FORWARD VOLTAGE (V)Figure 2 Typical Forward CharacteristicsF 1101001,00010,000V , INSTANTANEOUS REVERSE VOLTAGE (V)Figure 3 Typical Reverse Characteristics R I , I N S T A N T A N E O U S R E V E R S E C U R R E N T (n A )R 220C , T O T A L C A P A C I T A N C E (p F )T V , DC REVERSE VOLTAGE (V)Figure 4 Total Capacitance vs. Reverse VoltageRPackage Outline DimensionsPlease see AP02002 at /datasheets/ap02002.pdf for latest version.Suggested Pad LayoutPlease see AP02001 at /datasheets/ap02001.pdf for the latest version.SOT23Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915F 0.45 0.60 0.535G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975K1 0.903 1.10 1.025L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110a 8°All Dimensions in mmDimensions Value (in mm)Z 2.9 X 0.8 Y 0.9 C 2.0 E1.35X EYCZA l l 7°IMPORTANT NOTICEDIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.LIFE SUPPORTDiodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:A. Life support devices or systems are devices or systems which:1. are intended to implant into the body, or2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in thelabeling can be reasonably expected to result in significant injury to the user.B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause thefailure of the life support device or to affect its safety or effectiveness.Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2013, Diodes Incorporated。

相关文档
最新文档