ADS Fundamentals - 2002_AC Simulations

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8ABuilding the Top Level Design in Agilent Ptolemy

8ABuilding the Top Level Design in Agilent Ptolemy

PropNADCtdma P1 Type=NoMultipath Pathloss=Yes Env=TypicalUrban Delay=0.0 Pwr=0.0 Seed=1234567 Test=Tap1
AntBase A2 Gain=6 _dB X=0 meter Y=0 meter Height=10 meter
Lab 8 - Building the Top Level Design in Agilent Ptolemy
ADS 2002 CommSys, April 2002
Slide 8 1
Co-simulation
Co-simulation is simulating an A/RF schematic design with a DSP schematic design
Port P2 Num=2
ADS 2002 CommSys, April 2002
Slide 8 10
Add the Demodulator and Sinks
RES R6 R=50 Ohm SpectrumAnaly zer Recv _Out_Spectrum Plot=Rectangular Start=17*Sy m_time Stop=Def aultTimeStop Window=none WindowConstant=0.0
ADS 2002 CommSys, April 2002
Slide 8 6
Place the DSP Sub-Network Into the Top Level Design
RES R1 R=50 Ohm DelayRF D1 Delay=17*Sym_time InterpolationMethod=none IncludeCarrierPhaseShift=Yes TimedSink Qref Plot=Rectangular Start=DefaultTimeStart Stop=DefaultTimeStop ControlSimulation=YES

关于仿真软件ads的书

关于仿真软件ads的书

关于仿真软件ads的书关于仿真软件ADS(Advanced Design System)的书籍,以下是一些可能的参考:1. "Advanced Design System (ADS) Tutorial Guide" by Keysight Technologies: 这是一本官方教程指南,详细介绍了ADS的各种功能和使用方法。

2. "Microwave Office and ADS Circuit Design and Simulation" by Joseph F. White: 这本书涵盖了ADS和其他微波电路设计与仿真软件的使用,包括滤波器、放大器、混频器等电路的设计和优化。

3. "RF and Microwave Circuit Design for Wireless Systems" by David Pozar: 虽然这本书不是专门针对ADS的,但它包含了大量关于射频和微波电路设计的内容,这些内容在使用ADS进行仿真时非常有用。

4. "IC Design for Reliability" by J. R. Davis: 这本书讨论了集成电路设计中的可靠性问题,并包含了一些使用ADS进行仿真和分析的例子。

5. "High-Frequency Techniques: An Introduction to RF and Microwave Engineering" by Frederic J. Gardiol: 这本书是射频和微波工程的入门教材,其中包括了一些使用ADS进行仿真和设计的实例。

以上书籍都可以在各大线上书店或者图书馆找到。

不过需要注意的是,由于ADS软件的更新换代,一些旧版书籍中的内容可能与最新版本的ADS 有所差异,因此在使用时需要结合软件的实际版本进行参考。

ADS教程第2章

ADS教程第2章

ADS教程第2章实验二系统模拟基础概要这一章介绍了如何使用行为模型建立一个系统(例如我们要做的接收系统),这一步是设计系统的第一步,通过对系统级行为模型的模拟,来接近所需的系统性能。

先设定系统组件为所需的性能,然后逐步用独立的电路替换,并可以比较两者的性能差异。

目标●使用上一章的技巧和经验●使用行为模型(滤波器、放大器、混频器)建立一个RF接收器的系统项目,RF=1900MHz,IF=100MHz●使用一个RF源,带相位噪声的本振LO和一个噪声控制器●测试系统:S参数,频谱,噪声等等目录1.建立一个新的系统项目和原理图 (21)2.建立一个由行为模型构成的RF接收系统 (21)3.设置一个带频率转换的S参数模拟 (22)4.画出S21数据 (24)5.提高增益,再模拟,绘制出另一条曲线 (25)6.设置一个RF源和一个带相位噪声的本振LO (26)7.设置一个谐波噪声控制器 (27)8.设置谐波模拟 (29)9.模拟并画出响应:pnmx和V out (32)10.选学-SDD(象征性定义的元件)模拟 (33)步骤1.建立一个新的系统项目和原理图使用上一章学到的方法,建立一个新的项目取名rf_sys2. 建立一个由行为模型构成的RF接收系统a.Butterworth滤波器:在元件模型列表窗口中找到带通滤波器项目Filters-Bandpass。

插入一个Butterworth滤波器。

设定为:中心频率Fcenter=1.9GHz。

通带带宽BWpass=200MHz,截止为BWstop=1GHz。

b.放大器:在元件模型列表窗口中找到System-Amps&Mixers 项目,插入放大器Amplifier。

设定S21=dbpolar(10,180)。

c.Term:在port1插入一个端口。

端口Terms在元件模型列表窗口的Simulation-S_Param中找。

关于Butterworth滤波器请注意-Butterworth滤波器的行为模型是理想情况的,所以在通带内没有波纹。

Advanced Design System - 2002_DC Simulations and sub-circuit modeling

Advanced Design System - 2002_DC Simulations and sub-circuit modeling
Wire Icon:
Tips for wiring!
• Use the wire or connect pins = wired • Point and click to snap to grid • Drag a wired component and it stays wired. • Wire color can be changed: Options > Layers
Swept Variable in controller
Sweep: allows you to sweep a parameter but it must be declared as a variable. Note the dialog entry automatically puts quotes on the controller (screen) entry.
VARS can be used with optimization, parameter sweeps, and other applications!
Next, symbols, names,...
ADS 2002 Fundamentals - April, 2002
Slide 3 - 7
TIP: Wiring and Moving components
Or use the command: Edit > Wire/Pin Label Attributes
For busses, see: examples/Tutorial/wire_bus_prj It is a documented example. Next, VARS...
ADS 2002 Fundamentals - April, 2002

Advanced Design System - 2002_System Design Fundamentals

Advanced Design System - 2002_System Design Fundamentals
Hierarchy: System design with amplifier circuit! Top level: system.
Lower level: circuit.
Set up the simulation controller at the top level.
ADS 2002 Fundamentals - April, 2002
• Install directory (location of ADS program) - C or D drive on a PC $HPEESOF_DIR (UNIX variable) or %HPEESOF_DIR% (PC variable) • Home directory (location of your ADS design work) - C:\users\default on a PC $HOME (UNIX variable) or %HOME% (PC variable)
HB results: Fundamental tones, harmonics, difference and sum frequencies are plotted. However, because no conversion gain is accounted for in the SDD equation, the results have a lower magnitude than the behavioral model mixer. Also, Transient results compare within 1dB of HB using fs function.
Install
LICENSE Variable and File:

Filters DesignGuide,Transient Momentum and the DAC

Filters DesignGuide,Transient Momentum and the DAC

NOTE: iVar1 always = 1 (index at first column). However, iVal1 always starts at 0 (same as ADS data).
The file must be in the DATA directory and must be in correct format. The circuit simulation manual has information on file formats such as DSCR..
Slide 6 - 13
Steps in the Design Process
• Design the RF sys behavioral model receiver • Test conversion gain, spectrum, etc. • Start amp_1900 design – subckt parasitics • Simulate amp DC conditions & bias network • Simulate amp AC response - verify gain • Test amp noise contributions – tune parameters • Simulate amp S-parameter response • Define amp matching topology and tune input • Optimize the amp in & out matching networks • Filter design – lumped 200MHz LPF • Filter design – microstrip 1900 MHz BPF • Transient and Momentum filter analysis • Amp spectrum, delivered power, Zin - HB • Test amp comp, distortion, two-tone, TOI • CE basics for spectrum and baseband • CE for amp_1900 with GSM source • Replace amp and filters in rf_sys receiver • Test conversion gain, NF, swept LO power • Final CDMA system test CE with fancy DDS • Co-simulation of behavioral system

射频实验内容要求

射频实验内容要求

射频实验系统系列课题介绍一、射频实验系统的结构组成在无线通讯中,射频发射器担任着重要的角色。

无论是语言还是数字信号都要利用电磁波经空气传送到远端,而此过程都要使用射频前端发射器。

其主要电路结构如图1-1所示,它大致可分为9个部分。

1.中频放大器(IF AMP ):一般放大器电路,根据信号输入功率不同可分为小信号放大器、低噪声放大器和功率放大器三种。

2.中频滤波器(IF BPF ):滤波器的用途是抑制无用信号,而使有用信号顺利通过。

3.上变频混频器(MIXER ):混频器是利用混频管电阻(或电容)的非线性特性,将输入的外来信号频率S ω和本机振荡信号的频率L ω进行组合,产生一系列组合频率SL m n ωω±,再经滤波取出其中的和频S L ωω+(上变频器)或差频S L ωω-或L Sωω-(下变频器)。

4.射频滤波器(RF BPF )5.射频驱动放大器(RF AMP )6.射频功率放大器(PA )7.载波振荡器(LO )8.载波滤波器(LO BPF )9.发射天线(Antenna )射频前端接收器的基本电路结构如图2-1所示。

共分为天线(ANTENNA)、射频低噪声放大器(RF LAN)、下变频器(DOWN MIXER)、中频滤波器(IF BPF)和本地振荡器(LO)。

其工作原理是将发射端所发射的射频信号由天线接收后,经低噪声放大器后,再送入下变频器与本地振荡器混频后由中频滤波器将设计所要的频段信号滤出,最后再经过中频放大器将信号放大后,送到基频电路部分解调出所需要的信息信号。

二、ADS仿真软件Advanced Design System(ADS)是美国安捷伦(Agilent)公司所生产拥有的电子设计自动化软件;ADS功能十分强大,包含时域电路仿真(SPICE-like Simulation)、频域电路仿真(Harmonic Balance、Linear Analysis)、三维电磁仿真(EM Simulation)、通信系统仿真(Communication System Simulation)和数字信号处理仿真设计(DSP);支持射频和系统设计工程师开发所有类型的RF设计,从简单到复杂,从离散的射频/微波模块到用于通信和航天/国防的集成MMIC,是当今国内各大学和研究所使用最多的微波/射频电路和通信系统仿真软件软件。

ADS应用中的器件建模

ADS应用中的器件建模

Advanced Topics in Circuit Design (using ADS 2002) LAB 1: Modeling TechniquesOBJECTIVES• Use various devices in simulations• Extract parameters for a model• Use an SDD in an optimization• Use Model Binning• Use SDD’s to model an amplifier and nonlinear resistor• Use an FDD to model a doublerLab 1: Modeling Techniques1-2 Copyright Agilent Technologies 2002 TABLE OF CONTENTS1. Start ADS on your computer and copy the project (3)2. MODELS_prj...............................................................................................................3 2.1. DIODE Model. (3)2.1.1. BB535_Model.dsn.........................................................................................3 2.1.2. DIODE_Extraction_of_N.dsn. (6)2.2. BJT Model..........................................................................................................10 2.2.1. AT30500.dsn (10)2.2.2. AT30500_IC_VCE_Curves.dsn..................................................................12 2.2.3. AT30500_IC_and_IB_vs_VBE.dsn (13)2.2.4. AT30500_Extraction_of_IS_and_NF.dsn.................................................14 2.3. Model Binning. (16)2.3.1. Model_Binning_BJT_Example.dsn..........................................................16 2.3.2. Model_Binning_MOSFET_Example.dsn. (19)3. VENDOR_MODELS_prj ..........................................................................................23 3.1. AT36 Chip PHEMT.. (23)3.1.1. ATF36_CHIP_MODEL.dsn.........................................................................23 3.2. ATF36077 Packaged PHEMT (25)3.2.1. ATF36077_HB_Convergence.dsn .............................................................25 4. SDD_EXAMPLES_prj. (27)4.1.1. Amplifier_Model_DC.dsn..........................................................................27 4.1.2. Amplifier_Model_HB.dsn.. (30)4.1.3. Nonlinear_Resistor_DC.dsn......................................................................31 4.1.4. Nonlinear_Resistor_HB.dsn. (32)5. FDD_EXAMPLES_prj..............................................................................................33 5.1.1. FDD_DOUBLER_HB.dsn (33)6. References (37)Lab 1: Modeling TechniquesCopyright Agilent Technologies 2002 1-3PROCEDURE1. Start ADS on your computer and copy the project Project files used in this course should be copied to your computer as needed. The project files are located in the ADS Examples\Training\ADVCKT directory. You can use the ADS main window command: File > Copy Project, then select the Examples Directory and Browse to each project as you need it, as shown here: NOTE: The instructions for copying the project files will not be given again.2. MODELS_prj2.1. DIODE Model2.1.1. BB535_Model.dsn2.1.1.1. Copy and Open the project “MODELS_prj”, and then open thered text is just comment text.Lab 1: Modeling Techniques2.1.1.2. Here is our diode:2.1.1.3. Here are the equations that describe the DC forward andreverse characteristics of our diode junction:(forward biased: VD > 0)ID = IS * (e (q*VD / (N*k*T) ) – 1 )(reverse biased: VD < 0)ID = - ISwhere: k = 1.38 x 10-23 J/K (Boltzmann’s Constant)q = 1.602 x 10-19 C (charge on electron)T = 298.15 Kelvin (25 deg C)(you can also see this on page 19 of Massobrio andAntognetti, see references at end of lab)2.1.1.4. Note the value of N for our BB535 diode.N = 1.027831N is the forward emission coefficient of the diode.For ideal diodes, N = 1.0.1-4 Copyright Agilent Technologies 2002Lab 1: Modeling TechniquesCopyright Agilent Technologies 2002 1-52.1.1.5. Note the value of IS for our BB535 diode.IS = 0.919 fAIS is the saturation current of the diode.IS relates to both the forward and reverse characteristics ofthe diode, as seen above.2.1.1.6. Note the value of RS for our BB535 diode.RS = 0.094949 OhmsRS denotes a parasitic resistance in series with our diode.Our value of 0.094949 Ohms is almost negligible unless highcurrents are run through the diode.2.1.1.7. Note the value of LS for our BB535 diode.LS = 1.97 nHLS is a parasitic inductance in series with our diode.LS causes a change in the effective capacitance of our diode. This effective capacitance change will be an important effect in a later lab when we use this BB535 diode as a varactor(voltage tunable capacitor).2.1.1.8. Here is the equation for the diode’s reverse-bias junction capacitance(reverse biased : VD < 0)CJ = CJO / (1 – VD / VJ )M2.1.1.9. Note the values of CJO, VJ, and M for our diode.CJO = 28.7 pFVJ = 1.959931 VoltsM = 0.953817CJO is the zero-bias junction capacitance.VJ is the built-in junction voltage.M is the junction grading coefficient.2.1.1.10. Close the design “BB535_Model.dsn”.Lab 1: Modeling Techniques1-6 Copyright Agilent Technologies 20022.1.2. DIODE_Extraction_of_N.dsn2.1.2.1. Open the schematic “DIODE_Extraction_of_N.dsn”.2.1.2.2. In this schematic a voltage is applied across the diode and thecurrent running though the diode is measured. In this way, an I-V curve for the diode can be generated.A forward bias of 0 to +1.2 volts is applied across the diode, using the DC voltage source (SRC1). The bias is increasedslowly, in 2 mV steps, giving fine resolution for the I-V curve. This is a swept DC simulation, where the variable VD isswept. The Var equation (VAR1) is used to initialize VD for the sweep.A measurement equation (Meas1) is used to take the natural log ofthe diode current that is measured. This quantity,“ln_of_ID”, will be useful in the extraction of the diode emission coefficient, N.2.1.2.3. Run the simulation and view the results in theData Display. Note that the Data Display automatically opens when the simulation isfinished.Lab 1: Modeling TechniquesCopyright Agilent Technologies 2002 1-72.1.2.4. Look at the first page in the Data Display. It is titled, “I-VCurve”. This page should come up automatically.Here the current, “ID”, is graphed versus the swept biasvoltage, “VD”.2.1.2.5. Change to the second Data Display page, by using the Pagemenu and selecting the second page, “Extraction of N”.2.1.2.6.A plot is generated of ln(ID) versus VD.Two markers denote the estimated linear region of the curve. The slope ofthe line is extracted from these twomarkers via Data Display equations. N is related to the slope.Lab 1: Modeling Techniques1-8 Copyright Agilent Technologies 20022.1.2.7.Change to the third Data Display page, “Alternative Extraction of N”. Note that the “diff( )” function is used here to obtain the slope, or derivative, of the “ln_of_ID” curve. This is another method of estimating the linear region (the flat portion of the “Alternative_N” curve”) and extracting N. 2.1.2.8.Insert an equation (Eqn) and click the “Functions Help” button. Under the “MeasEqn Function Reference” topic, check out the “diff( )” function help page. The “diff( )” function can be used to take derivatives of any data. Close the Help page and click “Cancel”. 2.1.2.9.Create a new Data Display page by using the “New Page” command under the “Page” menu. Name this new page “page 4”.Lab 1: Modeling TechniquesCopyright Agilent Technologies 2002 1-92.1.2.10. In this new Data Display page, insert a listing column for “ln_of_ID”. Insert another listingcolumn for “ln_of_ID_slope”.Note that the derivative array “ln_of_ID_slope” has one lessentry, and that the independent variable values are between those of “ln_of_ID”.2.1.2.11. Change back to the “I-V Curves” Data Display page. Save yourData Display changes. Close the Data Display and Simulation Status Window. Close the design“DIODE_Extraction_of_N.dsn”.Lab 1: Modeling Techniques1-10 Copyright Agilent Technologies 20022.2. BJT Model2.2.1. AT30500.dsn2.2.1.1. Open the schematic “AT30500.dsn”.Note the bipolar transistor, BJT1. The “Model” field on this device points to the model card “BJTM1”. Every active semiconductor device in an ADS schematic must have an associated model card, just like SPICE.This schematic is an actual device model for the AT30500 chip from Agilent Semiconductor. It is available on the Agilent Semiconductor website at: 2.2.1.2. Turn on pin numbers and names. Start by going to the Options >Preferences menu:2.2.1.3. Select thePin/Tee taband checkboth the PinNumbers andPin Namesboxes. ClickOk.2.2.1.4. View the schematic symbol pageusing View > Create/EditSchematic Symbol. You mayneed to also “Zoom out by 2”.This symbol was created by copyingartwork from the ADS BJT symbol and attaching the 3 pins(Collector = 1, Base = 2, Emitter = 3) associated with our 3ports.View the schematic page again using View > Create/EditSchematic.You can also see the ADS BJT symbol artwork when youopen the following schematic (use Open Design and theBrowse button):D:\Ads2001\circuit\symbols\SYM_BJT_NPN.dsn2.2.1.5. Close the design “SYM_BJT_NPN.dsn” and the design“AT30500.dsn”.2.2.2. AT30500_IC_VCE_Curves.dsn2.2.2.1. Open the design “AT30500_IC_VCE_Curves.dsn”.2.2.2.2. This design shows a typical curve tracer. The inner sweep iscollector-emitter voltage, VCE, from 50 mV to 20V. The outersweep is base current, IB, from 5 uA to 35 uA.2.2.2.3. Run the simulation and view the Data Display results.2.2.2.4. A forward Early plot is shown that displays IC vs. VCEcurves.These typical BJT curves describe how the collector current(IC) varies with base current (IB) and collector-emittervoltage (VCE).One of the parameters that can be extracted from this curveset is VAF, the forward Early voltage.If you were to extend linear fits to these curves, down pastVCE = 0 V, down to negative VCE values, the fitted lineswould all meet at one point, (x,y) = (-VAF,0).In our AT30500 model, the VAF parameter is 105 Volts, whichis quite good. VAF’s better than 50 Volts are very desirable.A VAF of infinity would be ideal. This ideal transistor, with aVAF of infinity, would provide a constant collector current nomatter what the collector-emitter voltage is.2.2.2.5. Close the Data Display and Simulation Status Window. Closethe design “AT30500_IC_VCE_Curves.dsn”.2.2.3. AT30500_IC_and_IB_vs_VBE.dsn2.2.3.1. Open the design “AT30500_IC_and_IB_vs_VBE.dsn”.2.2.3.2. This schematic shows the next test one might run on a BJTdevice. This test varies base-emitter voltage (VBE) andmeasures base current (IB) and collector current (IC).This test holds VCE constant at 5 Volts, a typical operatingpoint.2.2.3.3. Run the simulation andview the results in theData Display.2.2.3.4. The Data Display has two pages. The first is titled “Beta”. Itshows how forward current gain (Beta or BF) varies withVBE. The maximum Beta is calculated, as well as, the VBE atwhich it occurs.2.2.3.5. The second Data Display page is titled “IC and IB”. The graphon this page shows how IB and IC vary with VBE. Themarkers are located at the maximum Beta point of VBE =0.736 V. IB and IC at this maximum Beta point are alsodisplayed.log(Beta) is the vertical distance between the IC and IBtraces on this semi-log plot:Beta = IC / IB è log(Beta) = log(IC) – log(IB)2.2.3.6. Close the Data Display. Do not save DDS changes. Close theSimulation Status Window. Close the design.2.2.4. AT30500_Extraction_of_IS_and_NF.dsn2.2.4.1. Open the design “AT30500_Extraction_of_IS_and_NF.dsn”.2.2.4.2. In this schematic, VBE is being swept. The equations inVAR1 set VBE equal to VCE, so that the base-collectorjunction has 0 Volts across it and does not activate.Under these conditions, we can extract the BJT modelparameters IS and NF.Please note the measurement equationsbeing used to calculate the naturallogarithms of the base and collectorcurrents.2.2.4.3. Simulate and view the results in the Data Display.2.2.4.4. The Data Display has two pages. The first page is titled“Extracting NF and IS”.On this page, the natural logarithms of IB and IC are plottedversus VBE. Two markers are again inserted onto the linearportion of the ln(IC) curve.The slope is calculated and NF is computed from it.NF = 1.030Compare this to the NF model parameter in the“AT30500.dsn” schematic.The y-intercept is calculated and IS is computed from it.IS = 7.8 x 10-17Compare this to the IS model parameter in the “AT30500.dsn”schematic.2.2.4.5. The second Data Display page shows an alternative methodof calculating the slope and extracting NF, using the “diff( )”function.2.2.4.6. Close the Data Display. Do not save DDS changes. Close theSimulation Status Window. Close the design“AT30500_Extraction_of_IS_and_NF.dsn”.2.3. Model Binning2.3.1. Model_Binning_BJT_Example.dsn2.3.1.1. Open the schematic “Model_Binning_BJT_Example.dsn”.2.3.1.2. Sometimes, a device can be drastically different dependingon the device size. This is especially true with empirical(curve-fit) models. This design shows how Model Binningcan change model cards based on device size (Area).2.3.1.3. There are 3 different BJT size ranges in this schematic, eachwith its own Gummel-Poon model. “Beta” is the ONLYparameter that varies in this particular case:SmallBJT: Beta = 150Valid for emitter area scale factors(Area) between 20 and 30.MediumBJT: Beta = 50Valid for emitter area scale factors(Area) between 30 and 40.LargeBJT: Beta = 25Valid for emitter area scale factors(Area) between 40 and 50.2.3.1.4. Notice that the “Model” field on the BJT points to“BinModel1”, the Model Binning component, instead of amodel card.2.3.1.5. Double-click on theModel Binningcomponent(BinModel1). Noticethe parameter thatwill vary is “Area”.This parameter mustbe defined on the BJTdevice itself. Closethe dialog box byusing “Cancel”.2.3.1.6. The minimum areasand maximum areasshown here determine which model card will be used for agiven device area.2.3.1.7. Check the DC simulation component in the schematic. Thissimulation will sweep VBE while current probes measureboth IB and IC. Notice that VCE = 3 Volts for this example.The equation, “Meas1”, defines Beta as forward current gain.2.3.1.8. Nested around the DC simulation is a Parameter Sweep,“Sweep1”. This Parameter Sweep will change the “size” or“area” of the transistor from 25 to 45 in steps of 10. Thisshould enable the use of all three size models.2.3.1.9. Change the Component Palette to “Devices - BJT”. Note thatthe upper left icon in the palette is the Model Binningcomponent.2.3.1.10. Run the simulation and viewthe results in the Data Display.2.3.1.11. There are two pages to the Data Display. The first showscollector current (IC) and base current (IB) versus VBE. Thesecond page shows Beta versus VBE. Indeed, Beta isdifferent for the different size devices. Notice that for the“size=25” device, Beta does not quite reach 150. This is dueto the interaction of Beta with other parameters such as IKFand VAF.2.3.1.12. Go back to the schematic and change IKF to 80e-3 for allthree models. Re-simulate. View the results.Return to the schematic again and change IKF back to 40e-3for all three models. Change VAF on all three models to 75.Re-simulate.Notice the effect of IKF and VAF on measured Beta. Modelparameters can sometimes have significant interactions.2.3.1.13. View the first Data Display page where IC and IB are shownversus VBE. Double click on the plot grid. This will bring upthe “Plot Options” dialog box. Double clicking on the tracewould bring up the “TraceOptions” dialog box.Select the “Plot Options” tab.Select the “Y-Axis” on the left.Click “More” to the right of“Axis Label”. Notice the formatis “Engineering”. This makesthe Y-Axis list out in nA, uA,and mA instead of scientificexponential notation. Click“Cancel” and “Cancel” to closethe dialog boxes.2.3.1.14. Return to the first DDS page. Save the schematic and theData Display. Close the Data Display and Simulation StatusWindow. Close the design“Model_Binning_BJT_Example.dsn”.2.3.2. Model_Binning_MOSFET_Example.dsn2.3.2.1. Open the schematic“Model_Binning_MOSFET_Example.dsn”.2.3.2.2. This design shows the model binning concept in 2 dimensions(W and L). The previous BJT model binning design showedbinning only in one dimension (Area).2.3.2.3. The purpose of model binning is to enable device modelingengineers to have different models for a device depending onits size (Area) or geometry (W, L). This can be veryimportant for small devices (e.g. short-channel MOSFET’s),where the behavior of the device changes drastically withgate width and gate length.2.3.2.4. This schematic uses the SPICE Level 1 MOSFET model forsimplicity while demonstrating the model binning concept.In reality, modeling engineers and IC designers who workwith the Berkeley BSIM3 MOSFET model deal withgeometry-dependence all the time.2.3.2.5. BSIM3 is one of the most recent and most “accurate”MOSFET models. Where “accurate” means that the modelequations match the measured data in most instances andeffectively predict device performance over wide ranges ofbias, temperature, and device size.The BSIM3 model is a MOSFET model that deals with short-channel MOSFET’s. Short-channel MOSFET’s are verycommon technology today, found in many modern SiGe andBiCMOS processes.BSIM3 has over 100 model parameters total. The acronymBSIM stands for Berkeley Short-Channel Insulated Gate FETModel. The latest version is BSIM4. Both BSIM3 and BSIM4will be available shortly in ADS and IC-CAP.To see the BSIM3 model in the ADS schematic window,change to the “Devices-MOS” component palette. Thispalette contains many different MOSFET models includingBSIM1, BSIM2, BSIM3, and BSIM3SOI. BSIM3SOI is forsilicon-on-insulator technologies. Insert some model cardsand check them out. Delete these model cards when you arefinished reviewing them.2.3.2.6. Take another look at the schematic. Notice that only one DCbias point is being simulated here:VGS = 2.5 Volts VDS = 5.0 VoltsSince VTO = 0.827 Volts, VGS is greater than VTO. Therefore,the device must be in the “ohmic” or “saturation” regions.However, VDS is much greater than (VGS-VTO). Therefore,this device is in the “saturation” region, where the VGSsquare-law characteristic applies:IDS = 0.5*KP*(W/L)*(VGS-VTO)2*(1+LAMBDA*VDS) 2.3.2.7. Look closely at VAR4. Here, the variable “Ratio” is defined asthe ratio of W/L. This is an important quantity in IC design, asmentioned earlier.2.3.2.8. Notice the VAR variables passed to the Data Display in theDC simulation (DC1):LAMBDA, Ratio, VDS, VGS, and VTOThese will be important in the extraction of KP for each ofour different sized devices.2.3.2.9. The parameters “Length” and Width” are part of the MOSFETdevice “MOSFET1”. Model binning can ONLY be done withparameters that are part of the actual device (like Length,Width, and Temp.2.3.2.10. Take a close look at the Parameter Sweep, “Sweep1”, and theDC simulation, “DC1”. Notice that there will be a total of fourdevices simulated, over a range of two different lengths andtwo different widths:Device 1: W = 100 um, L = 10 um (W/L = 10)Device 2: W = 100 um, L = 50 um (W/L = 2)Device 3: W = 500 um, L = 10 um (W/L = 50)Device 4: W = 500 um, L = 50 um (W/L = 10)2.3.2.11. Take a look at the four device models. Notice the onlydifference is the KP (transconductance) parameter:ShortNarrow: KP = 20uA/V2ShortWide: KP = 60 uA/V2LongNarrow: KP = 10 uA/V2LongWide: KP = 30 uA/V22.3.2.12. Double-click on the Model Binning component (BinModel1):Notice the Length and Width ranges for the four models.Close the model binning window with “Cancel”.2.3.2.13. When the simulation is run, the four devicetransconductances should come out like this:Device 1: W = 100 um, L = 10 um, KP = 20 uA/V2Device 2: W = 100 um, L = 50 um, KP = 10 uA/V2Device 3: W = 500 um, L = 10 um, KP = 60 uA/V2Device 4: W = 500 um, L = 50 um, KP = 30 uA/V22.3.2.14. Run the simulation andview the results in theData Display.2.3.2.15. View the first Data Display page, “Operating Region”. Thecalculations here verify that the devices are in the“saturation” region. Thus, the following formula can be usedto extract KP:KP = IDS / (0.5*Ratio*(VGS-VTO)2*(1+LAMBDA*VDS))To use this formula, the following parameters were sentforward from the schematic:Ratio, VGS, VTO, LAMBDA, VDS2.3.2.16. View the second Data Display page, “Calculated KP’s”. Thevalues of the passed parameters are listed out. KP’s areextracted using the above formula. The KP’s match thevalues listed in the four models.2.3.2.17. Note that the W (width) and L (length) values are shown inmicrons. Double click on any listing column. Change to the“Plot Options” tab. Notice the format is “Engineering”.2.3.2.18. Close the Data Display. Do not save DDS changes. Close theSimulation Status Window. Close the design“Model_Binning_MOSFET_Example.dsn”.3. VENDOR_MODELS_prj3.1. AT36 Chip PHEMT3.1.1. ATF36_CHIP_MODEL.dsn3.1.1.1. Copy and Open the project “VENDOR_MODELS_prj”.3.1.1.2. Open the schematic “ATF36_CHIP_MODEL.dsn”.3.1.1.3. This is the model of the ATF36 PHEMT chip from AgilentSemiconductor.3.1.1.4. A PHEMT is a pseudomorphic high mobility electron device.Think of a PHEMT like a GaAsFET with a heterojunction.Similarly, think of HBT’s (heterojunction bipolar transistors)as BJT’s with heterojunctions.3.1.1.5. A heterojunction is a semiconductor junction where twodissimilar semiconductor materials meet (like InGaAs andGaAs).3.1.1.6. Before heterojunctions were developed in HBT’s andHEMT’s, semiconductor devices used homojunctions whereboth the p-doped and n-doped materials were silicon, or bothGaAs.3.1.1.7. Heterojunctions add another degree of freedom for devicedesigners. They allow device designers to optimizeproperties like HBT base resistance and HBT current gainindependent of each other. Whereas, before with siliconBJT’s, these two properties were inextricably linked together.3.1.1.8. With heterojunctions of different materials, device designerscan now control the bandgap voltage of the junction bychanging the junction materials on either side (InGaAs –GaAs junction) or by changing their stoichiometric ratios(e.g. Ga0.47In0.53As - GaAs). This is important for LED’s sincethe bandgap voltage of an LED is directly related to thewavelength of light emitted.3.1.1.9. Look back at the AT36_CHIP_MODEL schematic. Notice thatthe Statz GaAsFET model is being used here. Agilent choseto use this model because it best fits the measured data (eventhough the Statz model was developed for GaAsFET’s, notPHEMT’s). However, GaAsFET’s and PHEMT’s aresomewhat similar in construction, concept, and operation.3.1.1.10. Currently, there are few industry-standard PHEMT models,because PHEMT’s are relatively new devices. Some modelsthat are used for PHEMT’s come from GaAsFET models, likeEEFET3 and Statz. However, the EEHEMT1 model wasdeveloped specifically for HEMT’s and PHEMT’s.3.1.1.11. Double-click on the Statz model card. Click “Help”. Thesehelp pages show the Statz I-V equations, as well as, otherrelated material. The reference for the Statz model is listedat the end of the help pages. Close the “Help” page. Click“Cancel”.Close the “ATF36_CHIP_MODEL.dsn” schematic.3.2. ATF36077 Packaged PHEMT3.2.1. ATF36077_HB_Convergence.dsn3.2.1.1. Open the schematic, “ATF36077_HB_Convergence.dsn”.3.2.1.2. Take a look at the schematic. Note the use of a circulatoragain to isolate the “Vsource” node.3.2.1.3. This design looks like a normal harmonic balance simulationwith the “RF_freq” variable setting the same frequency in theharmonic balance controller and on the source. The“RF_power” variable is also present to make changing theinput power level easy.3.2.1.4. However, notice the two extra blocks, “SwpPlan1” and“Sweep1”. Also notice the variable “Order” in VAR2, and inthe harmonic balance controller, “HB1”.“SwpPlan1” sets variable “Order” from 3 to 25 in steps of 1.“Sweep1” performs a harmonic balance simulation for eachvalue of “Order”. Thus, harmonic balance simulations areperformed with the Order parameter set from 3 to 25.3.2.1.5. Run the simulation and viewthe results in the Data Display.3.2.1.6. There are two pages in the Data Display. The first shows thevalues of the fundamental, second harmonic, and thirdharmonic versus Order. Please study these closely anddiscuss them with your instructor.Notice that all harmonic levels may not converge at the sameOrder. Notice the fundamental and second harmonicsconverge at about Order = 15. Whereas, the third harmonicconverges at about Order = 12.Harmonics can also converge at different Orders for eachcircuit.From these results, we can conclude that for a harmonicbalance simulation, the Order parameter should bedetermined by iteration for every circuit.Follow the general procedure:1) Start with Order = 3. Simulate. Check allharmonic power levels.2) Change the Order to 5. Simulate. Check allharmonic power levels again. Are they changing orare they the same?3) If they are changing, increase the Order until theharmonic power levels remain approximately thesame.Start with Order = 3 since this will be a fast simulation.Higher Orders result in longer simulation times, but moreaccurate results.3.2.1.7. Change to the second Data Display page. This page showsthe same data as the first page, but in tabular form. Noticethe number of frequencies increases directly with increasingorder.3.2.1.8. Stay on page 2 and save the Data Display. Close the DataDisplay. Re-open the same Data Display. Notice that it opensup starting on page 2 now. Change to page 1 and save theData Display.3.2.1.9. Close the Data Display. Close the Simulation Status Window.Close the schematic.4. SDD_EXAMPLES_prj4.1.1. Amplifier_Model_DC.dsn4.1.1.1. Copy and open the “SDD_EXAMPLES” project.4.1.1.2. Open the schematic “Amplifier_Model_DC.dsn”.4.1.1.3. This design performs a DC sweep from –2 Volts to +2 Voltson the input of this amplifier circuit. The output is loadedwith a 1 Megaohm resistor.4.1.1.4. The amplifier is a subcircuit. It has a small signal gain (A) of20, and input resistance (Ri) of 100 Megaohms, an outputresistance (Ro) of 0 Ohms, and a supply limit (Vs) of +/- 15Volts. These amplifier parameters are passed into thesubcircuit via “File > Design Parameters”.4.1.1.5. Let’s take a look at the amplifier subcircuitby pushing down into it:4.1.1.6. Notice the use of atwo-port SDD(SDD2P).An SDD is a“symbolically defineddevice” which isdefined in the timedomain.。

ADS射频仿真软件培训材料

ADS射频仿真软件培训材料
Top Half: Inductive Reactance (+jx) SHORT
25 50 100
Circles of constant Resistance
OPEN Bottom Half: Capacitive Reactance (-jx)
Lines of constant Reactance (+jx above and -jx below)
AC Simulation Controller
Set on-screen parameters in the Display tab. Turn Noise on/off: yes / no.
AC is a linear or small signal simulation and freq is usually set in the controller not the source.
S-parameters are Ratios
Usually given in dB as 20 log of the voltage ratios of the waves at the ports: incident, reflected, or transmitted.
S-parameter ratios: S out / S in
STEP 3: display the results
Netlist is automatically sent to the simulator. Simulation results (data) are written to a dataset.
Plot or list data & write equations.
• S11 - Forward Reflection (input match - impedance) • S22 - Reverse Reflection (output match - impedance) • S21 - Forward Transmission (gain or loss) These are easier to understand and • S12 - Reverse Transmission (isolation)

Advanced Design System - 2002_S-parameter Simulation and Optimization

Advanced Design System - 2002_S-parameter Simulation and Optimization

Slide 5 - 9
Creating Matching Networks
• Various topologies can be used: L, C, R • Avoid unwanted oscillations (L-C series/parallel) • Yield can be a factor in topology (sensitivity) • Use the fewest components (cost + efficient) • Sweep or tune component values to see S-parameters • Optimization: use to meet S-parameter specs (goals)
Turn on for SS noise. If more than 2 ports, specify for 2 port NF. If not, leave blank.
Next, Sweep plan...
ADS 2002 Fundamentals - April, 2002
Slide 5 - 7
NOTE: ADS has both continuous and discrete optimization. Yield analysis or a yield optimization is also available.
ADS Optimization in schematic…
ADS 2002 Fundamentals - April, 2002
Slide 5 - 12
Four elements for Optimization setup
1 - Optim controller: set the type, etc.

ADS simulation

ADS simulation

Nuclear Instruments and Methods in Physics Research A 493(2002)121–130Determination ofenergetic neutron spatial distribution usingneutron induced nuclear recoil eventsS.R.Hashemi-Nezhad a,*,M.Dolleiser a ,R.Brandt b ,W.Westmeier b,1,R.Odoj c ,M.I.Krivopustov d ,B.A.Kulakov d,2,A.N.Sosnin daDepartment of High Energy Physics,School of Physics,A28,University of Sydney,NSW 2006,Australia bInstitut f .ur Physikalische,Kern-und Makromolekulare Chemie,FB 15,Philipps-Universit .at,Marburg,Germany cInstitut fuer Sicherheitsforschung und Reaktorsicherheit,Forschungszentrum Juelich GmbH,Juelich,GermanydJoint Institute for Nuclear Research,JINR,Dubna,RussiaReceived 24April 2002;received in revised form 16July 2002;accepted 30July 2002AbstractNeutron induced nuclear recoils were used to determine the spatial distribution ofthe weakly moderated spallation neutrons produced in the interaction of1GeV protons with lead and uranium–lead targets.CR39plastic track detectors were used to record neutron-induced recoil tracks.The track density measurements were carried out using a fully automated optical microscope.The experimental results were compared with Monte Carlo simulations using MCNPX-2.1.5code and an extension code that was written for this purpose.A good agreement was found between the experiment and calculations for normalised results.Applicability of the MCNPX-2.1.5code for absolute recoil track density determination is discussed.r 2002Elsevier Science B.V.All rights reserved.PACS:25.40.Sc;25.40.Dn;87.66.Àa;29.85.+cKeywords:Spallation neutrons;Neutron distribution;Recoil tracks;MCNPX code1.IntroductionNeutron induced recoil events in different environments are used for the detection and spectroscopy ofthe energetic neutrons.In thiswork we use CR39solid-state nuclear track detectors,SSNTD [1],to record and study the recoil events that were generated by spallation neutrons produced in the interaction ofhigh energy protons with heavy metallic targets [2].This type ofSSNTD is widely used in f ast neutron dosimetry studies [3–5].One ofthe major shortcomings ofthe SSNTDs always has been the slowness ofthe track analysis and counting,especially when large sample sizes are involved.But nowadays this can be overcome by using a Fully Automated Optical Microscopes*Corresponding author.Tel.:+61-2-9351-5964;fax:+61-2-9351-7727.E-mail address:reza@.au (S.R.Hashemi-Nezhad).1Permanent address:Dr.Westmeier GmbH,35085Ebsdor-fergrund,Germany.21926–2002.0168-9002/02/$-see front matter r 2002Elsevier Science B.V.All rights reserved.PII:S 0168-9002(02)01551-6(FAOM).These instruments allow one to study the micro-distribution ofthe events ofinterest within macro-samples ofSSNTDs.Micro-spatial distribution studies ofthe f ast neutron induced events are not readily feasible with electronics detectors unless one uses high-resolution detection systems such as solid-state pixel detectors (with appropriate converters).These are much more expensive and complicated hardware and software systems are required.For quantitative assay it is important to simulate the response ofthe CR39detectors with Monte Carlo (MC)methods,especially in connec-tion with spallation neutrons and their applica-tions in accelerator driven systems [6,7].For this purpose we have employed one ofthe best and modern neutron transport codes namely MCNPX [8].2.Experimental procedure 2.1.IrradiationsTwo sets ofdetector assemblies were irradiated with weakly moderated spallation neutrons pro-duced in the interaction of1GeV protons with Pb and U/Pb targets.The target moderator setups were similar to those used in earlier experiments (see e.g.[9–11]).Two types oftargets were used,(a)a cylindrical lead target ofdiameter 8and length 20cm (Pb-target)and (b)two cylindrical uranium rods ofdiameter 3:6cm and length 10:4cm that were embedded in cylindrical lead shell ofthickness 2:2cm (U/Pb-target).The targets were surrounded with paraffin moderator of thickness 6cm (Fig.1).We used plastic detectors to measure the spatial distributions ofslow and energetic neutrons.For slow neutrons the detectors were cellulose nitrate foils coated with boron compound,LR-1152B 3and for the fast neutrons CR39detectors were employed.Schematic drawing ofthe detector assemblies is shown in Fig.2.The detector assemblies were placed on top ofthe paraf fin moderator parallel to the axis ofthe target cylinder and in the back ofthe moderator normal to the target axis covering the centre ofthe back f ace.The detectors in top and back will be referred to as ‘‘Top’’and ‘‘Back’’detectors.The plastic detectors and Cd foils were 1:5cm wide and 31cm or 20cm long for Top and Back detectors,respectively.The detector assemblies were exposed to spalla-tion (and fission)neutrons for the duration of one or two proton pulses in the target.The Synchro-phasotron accelerator ofJoint Institute f or Nucle-ar Research (JINR),Dubna,Russia,provided the proton beam ofenergy 1GeV :Total protonFig.1.Target-moderator and irradiation setup.3Manufactured by Kodak,Pathe,France.S.R.Hashemi-Nezhad et al./Nuclear Instruments and Methods in Physics Research A 493(2002)121–130122fluence 4for each irradiation was obtained from accelerator operators.The number ofthe protons that actually impinged on the targets was deter-mined in the following manner.After our short irradiation,other sensors were placed on the moderator (for another experiment)and proton irradiations were continued for much longer period to a total fluence of1013–1014protons,using the same beam-target geometry as in the short irradiations.The number ofprotons on the target for these experiments was determined via radiochemical method as explained in Ref.[10].We used the ratio ofthe radiochemically deter-mined to the operator provided proton fluences to obtain an estimate ofthe proton fluence in the short irradiations.The resulting fluence values were F U =Pb ¼6:2Â1010and F Pb ¼6:9Â1010pro-tons for U/Pb and Pb targets,respectively.The error in the radiochemical method offluence determination is estimated to be B 15%[10].2.2.Detector processing and track counting In the present paper only the results ofthe Top CR39detectors will be presented.TheTASTRK TM CR395detectors were etched in 6N NaOH at 701C for a period of 6h ;along with separate CR39samples that were irradiated with 252Cffission f ragments.Measurements ofthe fission track diameters indicated a bulk etch rate of1:3m m h À1:The counting ofthe tracks was carried out using a Fully Automated Optical Microscope (FAOM)developed in the School ofPhysics,University of Sydney [12,13].In the top detectors an area ofthe 0:5Â31cm 2was scanned and results were stored in appropriate files.We counted the tracks in the back face of the CR39detectors (marked S 2in Fig.2;the surface away from the paraffin mod-erator).The tracks observed on this surface of the detector result predominantly from the recoil events within the volume ofthe CR39detector.In counting ofthe tracks a track contour area restriction of2m m 2was imposed and the tracks with area less than this value were ignored.Fig.3shows a photomicrograph oftracks (mainly;proton,carbon and oxygen recoil tracks)in the surface S 2ofthe Top CR39detector (Fig.2),for the case of U/Pb target,at Z E 11cm (cf.Fig.1).The image dimension is 280Â220m m 2:The track density in this specific field ofview is 860tracks =mm 2(corresponding to 53tracks in the photomicrograph);there are no uncountable over-lapping tracks in the field ofview.For the samples studied in the present work,number ofoverlapped tracks was about 1%;majority ofwhich could be distinguished and counted by FAOM with appro-priate settings.3.Monte carlo simulations 3.1.Recoils eventsWe used MCNPX 2.1.5code [8]to obtain information on the recoil events within the volume ofthe CR39detector ðC 12H 18O 7;r ¼1:3g cm À3).The target-moderator setup and detector assembly as shown in Figs.1and 2were defined in thecode,Fig.2.Detector assembly.4In this paper the term ‘‘fluence’’is used to describe the time-integrated number ofthe protons that strike the target.5CR39detector,manufactured by H.H.Wills Physics Laboratory,University ofBristol,UK,under the trade name TASTRAK TM :S.R.Hashemi-Nezhad et al./Nuclear Instruments and Methods in Physics Research A 493(2002)121–130123with the difference that in the calculations the detector assembly covered the whole surface of the moderator.This was done deliberately to increase the number ofthe recoil events per unit length of the detector cylinder and hence improve the statistics ofthe calculations.Such a setup to some extent will affect the slow neutron flux in the detector volume,however,it is not expected to influence the number or type ofrecoils in the CR39.In the simulations the target was ‘‘irra-diated’’with a proton beam of E p ¼1GeV :The beam profile was elliptical with a Gaussian distribution in X -and Y -directions (Fig.1)close to the beam shape in the actual experiment.In MCNPX calculations the high-energy data li-braries [14]were used for the elements in the target–moderator–detector system except for ur-anium and cadmium for which such data library was not available.For these two elements the libraries provided by MCNP-4B2[15]with an upper energy limit of20MeV were employed.The particulars ofthe neutron collision events within the CR39i.e.coordinates ofthe collisionpoints,the participating nuclei,the direction cosines,energy and weight ofthe particles (i.e.the relative contribution ofthe particles to the final result [15]),were recorded in the PTRAC 6file of the MCNPX 2.1.5.In direct MC calculations without use of variance reduction techniques the statistics ofthe calculations was extremely poor and very high computing time was required.As a variance reduction method we used the forced collision [15]on the neutrons that enter the volume ofthe CR39(cylindrical shell ofinner radius 10:1044cm ;length 31cm and thickness 0:1cm).Also an energy cut-off of 0:1MeV was imposed on the neutron activity within the CR39.These constrains improved the precision ofthe calculations drama-tically for fewer incident proton histories and much shorter computer time.We used 5Â105incident proton histories,which resulted in a PTRAC file ofsize 711MB in ASCII f ormat.Fig.4shows the variation ofthe number of recoil events (i.e.proton,carbon and oxygen recoils)in the detector volume as a function of distance from the beam axis.The number of recoil events within 1mm thickness ofthe detector slightly decreases (at most B 4%)with increasing distance from the beam-axis;which can be attributed to the normal neutron flux reduction with the distance.We wrote an additional code,which uses the PTRAC as an input and transports the individual recoiling nuclei within the volume ofthe CR39to the extent that either the recoiling nuclei stop within the detector or cross the desired surface.For range vs energy calculations the SRIM 2000.40code was used [16].The energy ofthe recoils,their coordinates at the exit point on the surface and angle of the recoils with respect to the detector surface (dip-angle)were calculated.In order to decide which recoil will result in an etchable and detectable track the following restric-tions were implemented in the code:1.For the type ofthe detector and etching conditions used,in the case oftheprotonFig.3.Photomicrograph ofrecoil tracks (mainly proton,carbon and oxygen recoils)in TOP CR39detector ofthe U/Pb irradiation at the location of Z D 11cm (cf.Fig.1).The image dimension is 280Â220m m 2:The track density for this specific field ofview is 860tracks =mm 2(corresponding to 53tracks in the photomicrograph)and there are no uncountable overlapping tracks in this field ofview.On average f or these samples the number ofthe overlapping tracks is about 1%and majority ofthese can be distinguished and counted by FAOM with appropriate settings.6Default name for a file that can be produced by MCNP and MCNPX,which can contain information on e.g.collision events.S.R.Hashemi-Nezhad et al./Nuclear Instruments and Methods in Physics Research A 493(2002)121–130124recoils only those,that their energy on exit from the surface S 2were in the range of100keV to 2:5MeV were considered [3],see also the condition 4below.2.For protons the critical dip angle y c [1],as function of proton energy E r ;was taken from Ref.[17]for proton recoil energies of E r p 700keV and from Ref.[18]for E r >700keV :3.In the case ofthe C and O recoils,no energy limits were imposed except the indirect lower energy limit that arises from the condition 4below.Simulations showed that the total energy ofthe C and O recoils does not exceed 150MeV :The critical angle for etched track formation y c ðV Þ;for these ions was calculated from following equations [19]:y C ðV Þ¼sin À1ð1=V Þ;V V t ðLET N Þ=V B ¼1þ1:136ÂLET 1:022Nwhere LET N is the total linear energy transfer in units ofMeV cm 2mg À1which was calculated using SRIM 2000.40code [16],V B is the bulk etch rate and V t ðLET N Þis the track etch rate as a function of LET N :4.For any type ofrecoil only those with a range X 2m m in the detector were taken into account [3].This condition sets the lower energy limits of 180keV for protons,1MeV for C (83keV =nucleon :)and 1:3MeV for O-recoils ð81keV =nucleon Þ:5.A removed detector thickness (by etching)of h ¼7:8m m was taken into account.Events satisfying all of the above conditions were binned along the beam axis using the coordinates at which recoils exist from the detector surface.The track density for each bin was calculated by taking into account the number of incident protons in the MC calculations,proton fluence during the experiment,and area ofthe each bin.It was found that in a detector of thickness 1mm ;on average 1.5%ofproton recoils,0.27%ofcarbon recoils and 0.2%ofoxygen recoils within the detector volume resulted in etchable and detectable tracks.Fig.5shows the calculated energy spectra of the neutrons and protons within the volume ofthe CR39.Neutron and proton spectra within theN u c l e o n p e r 1 G e V p r o t o n c m -2Energy (MeV)Fig.5.Neutron and proton spectra within the volume oftheTop CR39detector.The proton distributions do not include those resulting from the recoil events.The protons in these spectra are produced in the course ofthe spallation process and nuclear reactions in the target–moderator–detector assembly.10.1010.1210.1410.1610.1810.2010.223004005006007008009001000N u m b e r o f e v e n t sRadial distance (cm)Fig.4.Variation ofthe number ofrecoil events (i.e.proton,carbon and oxygen)in Top CR39detector as a function of distance from the proton beam axis.S.R.Hashemi-Nezhad et al./Nuclear Instruments and Methods in Physics Research A 493(2002)121–130125volume ofthe Top CR39detector.The proton distributions do not include those resulting from the recoil events.The protons in these spectra are produced in the course ofthe spallation processand nuclear reactions in the target-moderator-detector assembly (see Section 3.2).Note that the thermal peak in the neutron spectra is absent due to the presence ofCd in the detector assembly.Fig.6illustrates the energy distributions ofthe proton,carbon and oxygen recoils in the detector volume.These are the recoil events that result in etchable and detectable tracks in the surface S 2(see the figure caption for more details).Table 1shows the relative contributions of different nuclear species to the recoil events inside the detector volume and to the tracks on the surface.The similarities seen in Table 1for U/Pb and Pb targets,is expected from the similarities of the neutron spectra within the CR39for U/Pb and Pb targets (Fig.5).Calculations show that the simulated track densities are not very sensitive to the thickness of the layer removed from the detector during the etching process.This is expected,since majority of the neutrons in the location ofthe CR39are moving in directions towards the outside ofthe setup (because ofthe small thickness ofreflecting material beyond surface S 2)and for momentum conservation requirements,most ofthe recoils are also pointed towards the surface S 2:In other words prolonged etching does not enhance the track density significantly.This observation allows one to adjust the etching conditions to suit the track detection method employed.Table 2gives the MC-calculated recoil track production per neutron (for neutrons with energy spectra shown in Fig.5).Track production per neutron in the case ofthe U/Pb target is slightly less than that for Pb-target.This is due to the fact050010001500200025000204060801001201401600120 F r e q u e n c y N (E )204060801001201401600 Recoil Energy, E (MeV)Fig.6.Energy distribution ofthe proton,carbon and oxygen recoils within the volume ofthe TOP CR39detector that resulted in etchable and detectable tracks in surface S 2:The distributions are for the Pb-target and the frequencies refer to 500000protons ofenergy 1GeV on the target.The energy bin width for proton recoils is 0.5and 1MeV for C and O-recoils.Note that the energy on exit from the detector surface determines which recoil results in etechable and detectable track.Table 1MC results on the recoil event production in the 1mm thick CR39detector at E p ¼1GeV Type ofrecoilU/Pb-target Pb-target Percentage Percentage Mean Percentage Percentage Mean oftotalofthe total range of oftotalofthe total range of recoils in the tracksrecoils recoils in the tracksrecoils detector ðm m Þdetector ðm m Þvolumevolume Proton 33.0480.41129.327.6877.17150.7Carbon 38.9514.0119.441.4716.2222.6Oxygen28.015.5812.430.856.6114.3S.R.Hashemi-Nezhad et al./Nuclear Instruments and Methods in Physics Research A 493(2002)121–130126that the relative number ofthe low energy neutrons(from spallation andfission processes) that do not contribute to the recoil track forma-tion is larger for the case of the U/Pb target.The recoil track production rates that are given in Table2apply only to neutrons with energy spectra shown in Fig.5and may not be compared with track production efficiencies reported in literature for other neutron sources.3.2.Tracks with non-recoil originBesides the neutron-initiated recoil events,the hydrogen and helium isotopes resulting directly from spallation process and those from the nuclear reactions can contribute to tracks recorded in the CR39.With the available neutron and proton spectra(Fig.5),energetically nuclear reactions,such as ðx;pÞ;ðx;dÞ;ðx;tÞðx;aÞandðx;3HeÞ;(where x represents proton or neutron),with12C;14N and 16O nuclei present in the detector assembly,are possible.The threshold energies for these reactions are in the range2.4–21:4MeV:Fig.7shows the energy,spatial and angular distributions ofthe protons that cross the surface S2ofthe detector f or the case ofthe U/Pb target, as calculated with the MCNPX 2.1.5code. Distributions similar to those shown in Fig.7 were also calculated for d,t,3He and4He ions. It should be mentioned that the data libraries [14]treat recoil events as local energy dump and MCNPX 2.1.5does not transport the recoiling nuclei.Thus the plots in Fig.7do not contain any ofthe proton recoils within the target-moderator-detector setup.However,the p,d,t,3He and4He nuclei resulting from nuclear reactions are trans-ported by MCNPX2.1.5and their contributions to the track densities can be estimated.Using the information given in Fig.7(and those corresponding to2H and3H)and applying the same restrictions used for proton recoils,the contribution ofthe hydrogen isotopes to the track density at the surface S2in each bin was estimated and added to the recoil events.The calculations showed that at most8%ofthe experimentally observed track densities at surface S2come from non-recoil H-isotopes.It was found that contribu-tions ofH e-isotopes to the track density were negligible.1101001000 1E-61E-51E-41E-30.010.1Proton Energy (MeV)1E-41E-30.01Z (cm)0.0000.0050.0100.0150.0200.025Protonsper1GeVincidentprotonDip angle, θ (degree)(a)Fig.7.Characteristics ofthe protons with non-recoil origin traversing the surface S2ofthe Top CR39detector f or the case ofU/Pb-target:(a)energy distribution ofthe protons that cross surface S2;(b)spatial distribution ofthe protons in surf ace S2; and(c)distribution ofthe Dip angle ofthe protons that exit through surface S2:Table2Recoil track productions per neutron(ofenergy spectra given in Fig.5)in the detector volumeType ofrecoil-track Recoil tracks per neutron(in the detector volume)U/Pb-target Pb-targetH1:02Â10À41:16Â10À4C1:78Â10À52:41Â10À5O7:1Â10À69:81Â10À6Total1:27Â10À41:5Â10À4S.R.Hashemi-Nezhad et al./Nuclear Instruments and Methods in Physics Research A493(2002)121–1301274.Experimental results and discussionFig.8shows the experimental and simulated track density distributions for U/Pb and Pb-targets.Every experimental data point in Fig.8represents the average track density calculated from 125fields of view,each covering an area of B 0:2Â0:2mm 2on the detector surface.All together in a given sample 38500fields ofview were scanned.From Figs.8a and c it can be seen that in the case ofthe U/Pb target,simulation underestimates (by B 18%),while for Pb-target simulation overestimates (by B 22%)track densi-ties compared to the experimental observations.The opposite trend ofthe disagreement between the experiment and simulation suggest that the differences do not come from the conditions imposed in the MC calculations but it must rather be due to parameters that are uniquely related to each experiment.Such parameters could be the proton fluence and/or counting efficiency of the FAOM.On the basis ofrepeated scanning ofthe samples and good reproducibility ofthe track densities it is clear that FAOM cannot be exclusively responsible for the observed discrepan-cies.Therefore,we believe that errors in the proton fluence determinations for our short irradiations (1–2pulses)are the main source ofthe observed differences between experiments and simulations.Figs.8b and d show the normalised track density distributions for simulated and experimen-tal results for U/Pb and Pb targets.As can be seen there is excellent agreement between the experi-ments and calculations for both target–moderator systems.Such an agreement between the normal-ised experimental and simulations results again suggest that the conditions used in the MC calculations cannot be the main reason for the observed discrepancies.From Fig.8it can be seen that,the maximum of the track density distributions appears at different Z -values for the U/Pb and Pb targets.For U/Pb it is at Z ¼10:4cm corresponding to a depth of B 5cm in the target while for Pb-target it appearsT r a c k d e n s i ty (m m -2)Z (mm)N o r m a l i s e d t r a c k d e n s i t y (m m -2)Z (mm)N o r m a l i s e d t r a c k d e n s i t y (m m -2)Z (mm)T r a c k d e n s i t y (m m -2)Z (mm)Fig.8.Experimental and simulated spatial distribution ofthe tracks in TOP CR39f or U/Pb and Pb target–moderator systems.(a)and (c)Un-normalised results;(b)and (d)are normalised track density distributions.S.R.Hashemi-Nezhad et al./Nuclear Instruments and Methods in Physics Research A 493(2002)121–130128at Z¼13i.e.8cm in the target.A similar effect has been reported in our earlier experiments[9] and also seen in these series ofexperiments f or slow neutrons[20].The position ofthe maximum is related to the maximum neutron yield per unit length ofthe target[2]and this position depends on proton energy E p and on the target material. Ifwe assume that all ofobserved discrepancies between the experiment and calculations are due to the errors in the protonfluence determinations, then from the MC calculations and experimental results the protonfluences for U/Pb and Pb targets can be calculated as F U=Pb¼7:56Â1010and F Pb¼5:57Â1010protons,which are18%higher and23%lower than experimentalfluence values respectively.Although Figs.8b and d suggest that the conditions used in the MC calculations are very close to reality they cannot be error-free.Thus the observed differences between the un-normalised experimental and simulation results are due to various approximations dominated by errors in the protonfluences.5.ConclusionsTracks in CR39detector that mostly were produced by neutron induced recoils ofthe nuclei in the detector,were used to study the spatial distribution ofspallation neutrons produced by 1GeV protons in two types oftarget moderator systems.The MCNPX2.1.5code and a follow-up extension code were used to simulate the experi-mental results.Within errors the MCNPX and the extension code correctly predict the position ofthe max-imum and the overall shape ofthe track distribu-tions and there is very good agreement between the normalised experimental and simulation results. However,the agreement for un-normalised results is not satisfactory.The observed discrepancies are associated mainly with errors in the values ofthe incident protonfluences,although errors in the conditions implemented in the MC calculations as well as errors associated with track counting can play a role.To obtain statistically acceptable simulation results large number ofproton histories must be followed and appropriate variance reduction techniques must be employed and as a result,very large size ofPTRACfile(regardless ofits f ormat) is unavoidable.Even when the recoiling nuclei are transported with MCNPX,as will be the case in the future versions of this code[21],one still will require the PTRAC or a similarfile to record the characteristics ofthe recoiling nuclei on exit f rom the desired surface.References[1]R.L.Fleischer,B.P.Price,R.M.Walker,Nuclear Tracksin Solids,University ofCalif ornia Press,Berkeley,CA, 1975.[2]S.R.Hashemi-Nezhad,R.Brandt,W.Westmeier,V.P.Bamblevski,M.I.Krivopustov, B.A.Kulakov, A.N.Sosnin,J.-S.Wan,R.Odoj,Kerntechnik66(2001)47.[3]J.Palfalvi,L.Sajo-Bohus,Radiat.Meas.28(1997)483.[4]M.Luszik-Bhadra,E.Dietz,F.D’errico,S.Guldbakke,M.Matzke,Radiat.Meas.28(1997)473.[5]E.Vilela,E.Fantuzzi,G.Giacomelli,M.Giorgini, B.Morelli,L.Patrizii,P.Serra,V.Togo,Radiat.Meas.31 (1999)437.[6]S.R.Hashemi-Nezhad,R.Brandt,W.Westmeier,V.P.Bamblevski,M.I.Krivopustov, B.A.Kulakov, A.N.Sosnin,J.-S.Wan,R.Odoj,et al.Monte Carlo calcula-tions on transmutation oftransuranic nuclear waste isotopes using spallation neutrons;difference of lead and graphite moderators.JINR Report E1-2000-291,2000, and Nucl.Instr.and Meth.A482(2002)547.[7]S.R.Hashemi-Nezhad,R.Brandt,W.Westmeier,V.P.Bamblevski,M.I.Krivopustov, B.A.Kulakov, A.N.Sosnin,J.-S.Wan,R.Odoj,Monte Carlo studies of accelerator driven systems;energy and spatial distribution ofneutrons in multiplying and mon-multiplying media.JINR Report E1-2000-291,2001,and Nucl.Instr.and Meth.A482(2002)537.[8]Laurie S.Waters,Editor,MCNPX user’s manual Ver.2.1.5,TPO-E83-G-X-00001,Los Alamos National labora-tory,November1999.[9]S.R.Hashemi-Nezhad,et al.,Radiat.Meas.31(1999)537.[10]J.-S.Wan,M.Ochs,P.Vater,X.P.Song,ngrock,R.Brandt,J.Adam,V.P.Bamblevski,B.A.Kulakov,M.I.Krivopustov,A.N.Sosnin,G.Modolo,R.Odoj,Nucl.Instr.and Meth.B155(1999)110.[11]J.-S.Wan,et al.,Nucl.Instr.and Meth.A463(2001)634.[12]S.R.Hashemi-Nezhad,M.Dolleiser,Radiat.Meas.28(1997)836.S.R.Hashemi-Nezhad et al./Nuclear Instruments and Methods in Physics Research A493(2002)121–130129。

ADS教程_RF瞬态仿真设计

ADS教程_RF瞬态仿真设计

射频瞬态仿真器RF瞬态/卷积仿真当信号和信号所包含的波形被复杂信号调制时,此仿真器用来解决与此相关的电路仿真问题。

这类信号是现代RF通信系统中信号的基本类型。

传统的仿真解决方法是基于SPICE或类似SPICE的时域运算法则。

瞬态和卷积仿真器在操作中属于类似SPICE类型。

它们求解一系列微积分方程,这些方程描述了电流和电压与时间的依赖关系。

所以,它是关于时间和扫描变量的非线性分析。

这类仿真方法是假设输入激励是任意的基带信号,所以,求解结果v(t) 也必须被假设是基带信号。

这意味着任何高频载波必须用基带信号来描述。

因此必须用更比谐波频率更高的频率抽样。

例如,假设带有3次谐波的5GHz信号,为了满足基本的Nyquist标准,抽样频率必须高于30GHz,为了使运算具有合理的精度,采用100GHz的抽样频率比较有实际价值。

现在,假设载波被100KHz的符号速率调制,我们希望对500个电路符号仿真。

并且,我们希望5ms 的总仿真时间,然而,高载波频率要求时间步长至少是10ps或更小。

这意味着电路仿真器必须求解超过500百万个时间点上的电路方程并输出结果。

瞬态分析特征:●在时域中分析低频和高频,线性和非线性大规模电路。

●检验像振荡器中启动时间的瞬态行为,滤波器的阶跃函数响应,脉冲RF网络响应,高速数字开关电路及更多。

●改善大规模、高度非线性电路的收敛度。

●时域到频域的转换,允许RF设计者在频域中查看输出结果(例如IP3)。

●瞬态和卷积选项的主要不同在于,每种分析方法怎样刻画电路中的分布参数元件和频率依赖元件高频SPICE分析高频SPICE分析全部在时域中进行,因此,不能对分布参数元件的频率依赖性行为分析,如微带元件,S—参数元件等等。

因此在瞬态分析中这类元件必须用简化的,与频率无关的模型代替,例如用集总参数的等效元件,具有常损耗无色散的传输线,短路电路,开路电路等等。

这些假设和简化在低频段通常是非常合理的。

高频SPICE特征:●对微带线,弯曲、缝隙和其它不连续性直接应用高频时间模型。

AC Simulation and Noise Contributions

AC Simulation and Noise Contributions
ADS 2002 Fundamentals - April, 2002
Slide 4 -5
Setting AC source values
POWER: The dbmtow function converts power in dbm to watts for the simulator. PHASE: The polar function specifies phase. By default, all sources are cosine waves. Use -90 for a sinewave. NOISE and Vdc: By default, noise is turned on for the P_AC source. Use Display tab/settings to make visible. Vdc 10 mV is an offset (superposition). Equations can also be used: P=1W, P=1+j*1W, P=complex(1,0), etc.
TIP - Data Display: Copy/paste & Hot Keys
• Keyboard keys: Ctrl C copies / Ctrl V pastes
COPY A PLOT or EQUATION. It also works from one data display window to another!
Slide 4 -2
ADS 2002 Fundamentals - April, 2002
AC Simulation Controller
Set on-screen parameters in the Display tab.

最新ADS spice模型建立相关资料PPT课件

最新ADS spice模型建立相关资料PPT课件
C B D C j01 V B A D D V 0m j C jsw 1 0V B P D D V 0m SW
4)栅电容
三个非线性栅电容CGB,CGS,CGD由随偏压 变化和不随偏压变化的两部分构成。
其中不随偏压变化的部分是栅极与源区、漏 区的交叠氧化层电容以及栅与衬底间的交叠氧 化层电容(在场氧化层上) 。
4)LEVEL=4 级别为4的MOS4模型又称BSIM(Berkeley short-channel IGFET model)模型。该模型 是由美国伯克利大学1984年专门为短沟道MOS 场效应晶体管而开发的模型,是AT&T Bell实验 室简练短沟道IGFET模型的改进型。模型是在 物理基础上建立的,模型参数由工艺文件经模 型参数提取程序自动产生,适用于数字电路和 模拟电路,而且运行时间比二级模型平均缩短 一半左右。现已发表的有BSIM1、BSIM2、 BSIM3和BSIM4等模型。
❖SPICE中将MOS场效应管模型分成不同级别, 并用变量LEVEL来指定所用的模型。
1)LEVEL=1
级别为1的MOS管模型又称MOS1模型,这是 最简单的模型,适用于手工计算。MOS1模型是 MOS晶体管的一阶模型,描述了MOS管电流 电压的平方率特性,考虑了衬底调制效应和沟 道长度调制效应,适用于精度要求不高的长沟 道MOS晶体管。
二、MOS1模型
MOS1模型包括了漏
G
区和源区的串联电阻
rD和rS,两个衬底PN 结和结电容CBS、CBD,
+
C GB
CGS
V -
G
S
rS
IDS
+ V G D- C G D
rD
反映电荷存储效应的 S
-
-

Advanced Design System - 2002

Advanced Design System - 2002

Layout / Momentum.
ADS 2002 Fundamentals - April 2002
Slide 1 9
ADS Windows: Main, Schematic, Status, Data Display
Main window: manage projects and open other windows... Schematic window: create / refine circuits & run simulations...
Applies to: RFIC, RF board, uWave circuits, and Systems. .
ADS 2002 Fundamentals - April 2002
Slide 1 4
Schedule of Topics and Lab exercises
Approximately 3 topics per day: 1. 2. 3. 4. 5. 6. 7. 8. 9. Circuit Simulation Fundamentals System Design Fundamentals DC Simulation and circuit modeling AC Simulation and noise contributions S-Parameters and Optimization Filters: DesignGuide,Transient, Momentum Harmonic Balance Simulations Circuit Envelope Simulation Final Circuit & System simulations
E8900-90396 Instructor Slides - April, 2002

ADS射频天线部分仿真及优化学习教案

ADS射频天线部分仿真及优化学习教案
第2页/共27页
第三页,共27页。
3.2执行Import 命令,导入模版文件“双面板菲林(fēi lín)模版”,此 时各层的菲林(fēi lín)文件已经生成,如下图所示:
第3页/共27页
第四页,共27页。
3.3执行Export 命令,将Routing top的菲林文件导入F:\RF文件夹 。GERBER文件转换完成。注意:菲林文件存储(cún chǔ)路径 不能有中文字母。
第17页/共27页
第十八页,共27页。
13、原理图中载入MURATAInclude,电容 GRM15,电感LQG15HH。
(进行原理图仿真之前(zhīqián),首先载入 MuRata公司的DesignKit。)
第18页/共27页
第十九页,共27页。
14、将电容和电感(diàn ɡǎn)都设置为Discrete Optimize setting
第8页/共27页
第九页,共27页。
5、在GBRVU-art001.job界面(jièmiàn)下选择 Gerber Union
第9页/共27页
第十页,共27页。
5、直接点击OK, 输出(shūchū)的文件会存在 C:\users\default\Small_RF_prj\art001_0_a
第10页/共27页
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第二十页,共27页。
15、点击Tnsert /Template在界面(jièmiàn)中选 择S_Params
第20页/共27页
第二十一页,共27页。
16、使用(shǐyòng)连接线将端口和原理图连接 起来
第21页/共27页
第二十二页,共27页。
17、修改(xiūgǎi)Term1和Term2端口阻抗,都设 置为(69-j*29)ohm

2002年美国大学生数学建模大赛赛题

2002年美国大学生数学建模大赛赛题

2002 Mathematical Contest in ModelingThe ProblemsProblem AAuthors: Tjalling YpmaTitle: Wind and WatersprayAn ornamental fountain in a large open plaza surrounded by buildings squirts water high into the air. On gusty days, the wind blows spray from the fountain onto passersby. The water-flow from the fountain is controlled by a mechanism linked to an anemometer (which measures wind speed and direction) located on top of an adjacent building. The objective of this control is to provide passersby with an acceptable balance between an attractive spectacle and a soaking: The harder the wind blows, the lower the water volume and height to which the water is squirted, hence the less spray falls outside the pool area.Your task is to devise an algorithm which uses data provided by the anemometer to adjust the water-flow from the fountain as the wind conditions change.Problem BAuthors: Bill Fox and Rich WestTitle: Airline OverbookingYou're all packed and ready to go on a trip to visit your best friend in New York City. After you check in at the ticket counter, the airline clerk announces that your flight has been overbooked. Passengers need to check in immediately to determine if they still have a seat.Historically, airlines know that only a certain percentage of passengers who have made reservations on a particular flight will actually take that flight. Consequently, most airlines overbook-that is, they take more reservations than the capacity of the aircraft. Occasionally, more passengers will want to take a flight than the capacity of the plane leading to one or more passengers being bumped and thus unable to take the flight for which they had reservations.Airlines deal with bumped passengers in various ways. Some are given nothing, some are booked on later flights on other airlines, and some are given some kind of cash or airline ticket incentive.Consider the overbooking issue in light of the current situation:Less flights by airlines from point A to point BHeightened security at and around airportsPassengers' fearLoss of billions of dollars in revenue by airlines to dateBuild a mathematical model that examines the effects that different overbooking schemes have on the revenue received by an airline company in order to find an optimal overbooking strategy, i.e., the number of people by which an airline should overbook a particular flight so that the company's revenue is maximized. Insure that your model reflects the issues above, and consider alternatives for handling "bumped" passengers. Additionally, write a short memorandum to the airline's CEO summarizing your findings and analysis.ICM: The Interdisciplinary Contest in Modeling2002 Contest ProblemIf we SCRUB our land too much, we may lose the LIZARDsThe Florida scrub lizard is a small, grayor gray-brown lizard that livesthroughout upland sandy areas in theCentral and Atlantic coast regions ofFlorida. The Florida Committee onRare and Endangered Plants classifiedthe scrub lizard as endangered.Picture by Grant HokitYou will find a fact sheet on the Florida Scrub Lizard at scrublizard.pdfThe long-term survival of the Florida scrub lizard is dependent upon preservation of the proper spatial configuration and size of scrub habitat patches.Task 1: Discuss factors that may contribute to the loss of appropriate habitat for scrub lizards in Florida. What recommendations would you make to the state of Florida to preserve these habitats and discuss obstacles to the implementation of your recommendations?Task 2: Utilize the data provided in Table 1 to estimate the value for F a (the average fecundity of adult lizards); S j (the survivorship of juvenile lizards- between birth and the first reproductive season); and S a (the average adult survivorship).Table 1Summary data for a cohort of scrub lizards captured and followed for 4 consecutiveyears. Hatchling lizards (age 0) do not produce eggs during the summer they areborn. Average clutch size for all other females is proportional to body size according to the function y = 0.21*(SVL)-7.5, where y is the clutch size and SVL is the snout-to-vent length in mm.Task 3: It has been conjectured that the parameters F a, S j, and S a, are related to the size and amount of open sandy area of a scrub patch. Utilize the data provided in Table 2 to develop functions that estimate F a, S j, and S a for different patches. In addition, develop a function that estimates C, the carrying capacity of scrub lizards for a given patch.Table 2Summary data for 8 scrub patches including vital rate data for scrub lizards. Annual female fecundity (F a), juvenile survivorship (S j), and adult survivorship (S a) are presented for each patch along with patch size and the amount of open sandy habitat.Task 4: There are many animal studies that indicate that food, space, shelter, or even reproductive partners may be limited within a habitat patch causing individuals to migrate between patches. There is no conclusive evidence on why scrub lizards migrate. However, about 10 percent of juvenile lizards do migrate between patches and this immigration can influence the size of the population within a patch. Adult lizards apparently do not migrate. Utilizing the data provided in the histogram below estimate the probability of lizards surviving the migration between any two patches i and patch j.Table 3HistogramMigration data for juvenile lizards marked, released, and recaptured up to 6 monthslater. Surveys for recapture were conducted up to 750m from release sites.Task 5: Develop a model to estimate the overall population size of scrub lizards for the landscape given in Table 3. Also, determine which patches are suitable for occupation by scrub lizards and which patches would not support a viable population.Patch size and amount of open sandy habitat for a landscape of 29 patches located on the Avon Park Air Force Range. See:map.jpgfor a map of the landscape.Patch Identification Patch Size (ha)Sandy Habitat (ha) 113.66 5.38232.7411.913 1.390.234 2.280.7657.03 3.62614.47 4.387 2.52 1.998 5.87 2.49922.278.441019.257.581111.31 4.80TASK 6: It has been determined from aerial photographs that vegetation density increases by about 6% a year within the Florida scrub areas. Please make a recommendation on a policy for controlled burning.。

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ADS Fundamentals - 2002LAB 4: AC SimulationsOverview - This lab continues the amp_1900 project and uses the same sub-circuit as the previous lab. This exercise teaches the basics of AC simulation, including small signal gain and noise. It also shows many detailed features of the data display for controlling and manipulating data.OBJECTIVES∙Perform AC small signal and noise simulations.∙Adjust pin/wire labels.∙Sweep variables and write equations.∙Control plots, traces, datasets, and AC sources.Lab 4: AC Simulations4-2 Table of Contents1. Copy & Paste (Ctrl+C / Ctrl+V) from one design to another. (3)2. Modify the copied circuit and pin labels (4)3. Push and pop to verify the sub circuit. (5)4. Set up an AC simulation with Noise. (5)5. Simulate and list the noise data (5)6. Control the output of equations and node voltages. (6)7. Simulate without noise. (7)8. Write a data display equation using a measurement equation (7)9. Work with measurement and data display equations. (8)10. Plot the phase and group delay for the ac analysis data (9)11. Variable Info and the w hat function. (10)12. OPTIONAL - Sweep Vcc (as if the battery voltage is decreasing) (11)Lab 4: AC Simulations4-3 PROCEDURE1. Copy & Paste (Ctrl +C / Ctrl +V) from one design to another.a. Open the last design (dc_net) and copy the circuit shown highlighted here by dragging the cursor around the area - this is known as rubber banding. With the items highlighted, copy then by using the keyboard keys Ctrl + C or the Edit > Copy command. Using Ctrl + C is preferred because it eliminates mouse clicks.b. Use the File> New Design command to create a new schematic and name it: ac_sim . Then use Ctrl + V or use Edit > Paste and insert (ghost image) the copy by clicking into the new schematic.c. Save the ac_sim design. You must save it or it will not be written to the database.d. Click the command Window > Designs Open . This command gives you access to designs that are open in memory but not visible in a window or not saved in memory. When the dialog appears, select dc_net and click OK . Then close dc_net design using File > Close Design (no need to save the changes).e. In the empty schematic window, reopen the ac_sim design using theFile > Open Design icon . This gives you a list of all the designs in the project. If a design is created but not saved initially, it will not be in this list and you will need to use the command Window > Designs Open to access it.Lab 4: AC Simulations4-42. Modify the copied circuit and pin labels.Delete wires, insert new components, and rewire as needed. The steps follow:a. Disconnect the DC source and move it to the side with a ground.b. Insert two ideal DC_Block capacitors from the Lumped-Components palette or use component history.c. Insert a V_AC source from the Sources-Freq Domain palette. Ground the source. Then add a 50 ohm load resistor and ground to the output.d. Modify the Pin/Wire (node) labels. Click the Name icon. Add Vcc as a label to both RC and the DC source. This will connect them electrically instead of a wire.e. Add Vin and Vout as shown. Also, if you did any OPTIONAL steps in lab 3, remove VC and VBE by clicking on those labels when the dialog is blank (shown here) or use the command : Edit >Wire/Pin Label > Remove Wire/Pin Label .f. Verify that the circuit looks like the one shown here.NOTE on Wire/Pin Label Attributes : You can drag labels to move them and you can edit attributes by double clicking on them or by using the command: Edit >Wire/Pin Label > Wire/Pin Label Attributes.Lab 4: AC Simulations4-5 3. Push and pop to verify the sub circuit.a. Select the bjt_pkg and push into the sub-circuit (use the icons) to checkyour sub circuit, and then pop out again.4. Set up an AC simulation with Noise.a. Insert an AC Simulation controller. Then edit the start, stop, and step frequencies: 100 MHz to 4 GHz in 100 MHz steps.b. In the Noise tab, check the box for Calculate noise and add the Vout node. Set the Mode to Sort by Name for each noise contributor. Sort by value is good for large circuits to see the largest contributors first. Also, all noise values will be simulated if a Dynamic range (threshold) is not set.c. Turn on the Display for each of the parameters as shown here.5. Simulate and list the noise data.a. Simulate (F7).b. In the data display, insert a list (icon) of name and vnc (voltage noise contributors) using the Ctrl key to select them both. As shownhere, at each frequency, Q1.BJT1 is the total noise voltage for the device and is composed of: Q1.BJT1.ibe and Q1.BJT1.ice. However, these are not correlated voltages but have been added as noise powers: (V total )2 = (V ibe )2 + (V ice )2. The total vnc is the same as Vout noise.c. Savethe schematic and data display.Lab 4: AC Simulations4-66. Control the output of equations and node voltages.a. In the ac_sim schematic, insert a MeasEqn from any simulation palette. Or, you can type in MeasEqn in component history.b. Directly on the schematic screen, edit (type) the equation to compute voltage gain using the node (pin) labels Vin and Vout. Use the keyboard arrow key to move across the equal (=) sign.c. Edit the AC simulation controller and go to the Output tab. The default is for all labeled node voltages (pin/wire labels) and all Measurement equations to be reported in the dataset. You will change this in the next steps.d. Uncheck the box for Node Voltages and click on the Add/ Remove button.e. Select Vin and Vout from the list of available outputs and Add them as shown here - then click OK . Only those node voltages will be written into the dataset after simulation and Vcc will not. This works for measurement equations also.d. Click OK to dismiss the dialog – you are now ready to simulate.NOTE on node name display : You can display the node names (Display tab –NodeName check box) but it is not necessary.Lab 4: AC Simulations4-7 7. Simulate without noise.a. In the schematic, turn off the noise calculation by changing (typing) yes to no as shown here. This will save simulation time and memory, especially for large circuits. Of course, this will make your dataset list (name and vnc) invalid.b. Save the schematic and Simulate (F7).8. Write a data display equation using a measurement equation.a. In the data display, delete the invalid noise listing.b. Insert a data display equation (use the icon).c. In the dialog, write an equation for the gain in dB as shown here. Notice that you are inserting the schematic measurement equation into your data display equation and click OK :Note on equations - If the measurement equation for voltage gain was not already calculated, you would write the data display equation with all the required values, for example: gain_dB = 20 * log (mag (Vout) / mag (Vin)). However, because that voltage gain was already calculated, it is easier tosimply insert it here.Lab 4: AC Simulations4-89. Work with measurement and data display equations.a. Insert a list of the measurement equation gain_voltage and the DDS equation you just wrote gain_dB . Again, schematic measurement equations are automatically written into the dataset as shown here. But equations you write in the data display are not - they are accessed in the data display Equations memory. To display your dataset equation, gain_dB, click on the arrow box (shown here) and then select it and add it. Click OK and both equations will appear in the list.b. Scroll down the list to values around 1900 MHz, using the arrow buttons as shown.c. Insert the cursor directly into the gain_voltage column and type in the dB function as shown. Then add parentheses so that it reads: dB (gain_voltage). This demonstrates the flexibility of the data display for operating (with ADS functions) directly on data and equations.d. Click the data display Undo command to return to remove the dB function.e. Edit the list (double click) and change it to a rectangular plot by selecting the icon.f. Insert the cursor directly onto the Y-axis label and change gain_voltage to dB (gain_voltage) similar to the way you did in the list. Then undo it. Again, thisshows the power of functions and the data display.Lab 4: AC Simulations4-9 NOTE on dB values – Converting the AC analysis voltage to dB is not the same as S-parameter analysis in dB that uses power (V and I) and also has a 50 ohm source Z.10. Plot the phase and group delay for the ac analysis dataa. Insert a rectangular plot of the phase of Vin and Vout and put markers on 1900 MHz. The phase inversion is not 180 degrees due to the bjt_pkg parasitics. Add markers and you will see that the phase is closer to 180 at lower frequencies. You may want to Hot Key the new marker command using the DDS Options > Hot Key similar to schematic.b. Insert a new equation to calculate group delay . As shown here, use the phase of Vout and the diff function then plot the equation. The diff function calculates the difference between points on the slope. The minus sign gives the result in decreasing value. Place a marker on the trace and notice that it will be on either side of 1900 MHz (+/- 50 MHz) because of the diff function.c. Go back to the schematic, change the step size to 10 MHz , simulate again and watchthe plot update.d. Edit (double click) the marker. In the readout tab, set Format to Engineering with 2 significant digits as shown here - you will see the Y axis value change to pico (pico-seconds)and the X axis resolve to 1.90 GHz.e. OPTIONAL - Try grouping the group delay equation and the plot so they stay together when you move them. Use the Shift key and select the plot and the equation. Then click : Edit > Group . They should now movetogether in the data display.Lab 4: AC Simulations4-10 11. Variable Info and the what function.a. Insert a new list (dataset is still ac_sim ). Add Vout, select it, and click on the Trace Options button. You can do this in a new page if desired or zoom out by 2 for more room on the display.b. When the dialog box appears, click on the Variable Info button and another dialog will appear as shown here. Select the Vout data and you will see that the dependency for Vout is 391 frequency points. This should be the same for all the items in the dataset because only frequency was swept.c. Close the dialog, click OK, and go back to the list of Vout. Insert the cursor in the Vout column and type in the what function as shown: what (Vout). Notice that you get the same variable information. Later on, you will use this function to determine how to index into dataset tables with multiple sweeps or mixing products.NOTE on functions : You can read about the what function and other ADS functions (abs, real, s_stab_circle, etc.) by clicking the Functions Help button whenever you insert an equation in the data display. When the Help browser appears complete, select the MeasEqn Function Reference and scroll down to the function of interest. Try this and look over some of the information to seehow ADS functions are described if you have time.Lab 4: AC Simulations4-11 12. OPTIONAL - Sweep Vcc (as if the battery voltage is decreasing)This step will require you to use the skills you already learned in the previous lab exercises. You will set up a parameter sweep for Vcc from 5 volts to 2 volts in 0.25 volt steps.a. In your schematic, insert a VAR (variable equation) initializing Vbias = 5 volts .b. Redefine the source: Vdc = Vbias .c. Insert a Parameter Sweep from any simulation palette. Then set the SweepVar (sweep variable) to be Vbias . Be sure the Simulation Instance Name of the AC simulation controller is also set as shown here.d. Change the dataset name = ac_bat_swp and Simulate . When the simulation is completed and the DDS opens, a dialog will appear asking if you want to change the dataset – answer NO. Then plot the mag of Vout . A set of curves for each step will appear as shown here.e. To display trace labels of Vbias, edit the trace using the Trace Options tab and check the Display Label box.f.Insert markers as desired.Trace Options used to Display label of Vbias on right of plot. Trace lines canalso be thickened.Lab 4: AC Simulations4-12g. Save all your work .EXTRA EXERCISES :1. In a new design, simulate with port noise and ports. To do this, use a P_AC source as the input port 1(Num=1) and place a Term on the output as port 2 (Num=2). These two components are shown here with the port numbers.2. In a new design, insert an I_AC constant current source and simulate. To do this, you need to put a large resistance in parallel with the source because the simulator needs to verify a dc path to ground and the current sources are open circuits.3. Insert the P_AC source and look at the power gain. Also, sweep another parameter and plot the results.4. Try using the node settings in the AC simulation palette. You can set initial voltages at nodes using the Node Set or by referring to name nodes using the NodeSetByName component.。

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