presentation 关于微电子专业的英语介绍
电子信息科学专业英语翻译范文
UNIT 1 Microelectronics and Electronic Circuits1-1Introduction to Microelectronics首先学习KEY WORDS.学习课文英文翻译成中文，并注意学习专业词汇。
Para. 1对太空的探索以及人造地球卫星的发展，增强了人们对减少电子电路的重量和体积的重要性的认识。
另外，即使电流在计算机中流得相当快，但是由于电子元器件之间的互联所导致的信号的时间延迟是不能不考虑的。
如果这种互联在尺寸上能减小，无疑会使计算机的运行速度更快。
Para. 2微电子学主要是使常规电路微型化。
比如一个运算放大器，包括许多彼此互连的分立器件，有二极管，电阻，象这样一个完整的电路，可以制作在一个很小的基片上。
这个完整的微型化的电路就称之为集成电路（IC）。
Para. 3IC体积小，重量轻，坚固耐用，稳定可靠。
它们比同等宏观电路（分立元件电路）需要更少的功耗和更低的电压。
因此，它们可以工作在更低的温度下，而在这种温度下，分立器件可能都不能正常工作，因为温度没有达到正常工作温度范围。
相应地，几乎不会产生寄生电容和延时，因为在IC中，器件之间地互联非常短。
维护起来跟简单，因为，如果在一个IC里边地器件坏了，通常用一个新的IC来替换坏的。
表面技术的大规模生产技术已经降低了许多IC的成本，因此，它们就跟单个晶体管一样便宜。
最后的结果就是，大部分常用的分立器件电路被IC所取代。
Para. 4有两种基本类型的IC：一种是独立IC,一种是薄或厚的膜状IC. 独立IC是构建在单个的半导体晶体的基片里边，通常用的是硅。
薄或厚的膜状IC是形成在一种绝缘材料的表面，像玻璃或者陶器。
还有一种混合的IC所包含的不仅仅是单个的基片。
在这里，这个词“混合”同样也指独立IC和薄或厚的膜状IC结合体。
Para. 5也可根据其功能不同对集成电路进行分类。
数字IC（也称为逻辑IC）通常用作开关，表示接通或关闭。
电子信息科学专业英语En_Unit1
Integrated circuits can be produced using either bipolar or unique polar transistors.
Hybrid IC contains more than a single substrate, the term hybrid is also applied to combinations of monolithic and thin or thick film IC.
而混合IC电路包括不止一种基底，这里“混合”一词 含义是也用于单晶片电路和薄膜或厚膜电路的组合。
电子信息科学专业英语
Unit1 Microelectronics and electronic circuits
1-1 Introduction to Microelectronics Keywords Translation Exercises Notes
2
keywordsOperational amplifier 运算放大器 feedback amplifier反馈放大器
空间探索和地球卫星技术的发展越来越强调减小电路的 体积和重量。
Also, even though electricity flows quite rapidly in computers the time delay of the signal in the interconnections between electronic components is an important consideration.
between the individual components in IC.
微电子科学与工程卓越全英班
微电⼦科学与⼯程卓越全英班微电⼦科学与⼯程（卓越全英班）Microelectronic Science and Engineering（Excellent English-Taught）专业代码：080704 学制：4年Program Code: 080704Duration: 4 years培养⽬标：⾯向国家集成电路发展历史机遇和粤港澳⼤湾区电⼦信息技术发展需求，培养德智体全⾯发展，具有家国情怀和⾼度社会责任感，具有扎实的基础理论和系统的专门知识，具备宽阔的国际视野、深厚的⽂化底蕴和优良的综合素质，胜任国际化合作与竞争的复合型集成电路⼯程精英⼈才。
Educational Objectives:Facing the historical opportunities of national integrated circuit development and the development needs of electronic information technology in Guangdong, Hong Kong, Macao and Dawan District, we should cultivate advanced integrated circuit technical talents with all-round development of morality, intelligence and physique, national sentiment and high social responsibility, basic training of engineers and comprehensive knowledge: basic knowledge, basic skills and basic qualities of scientific research in the field of microelectronic engineering. It has the ability of international vision, as well as excellent comprehensive quality. As a compound qualified talents who’s capable for international communication and competition in the field of integrated circuits engineering.毕业要求：①⼯程知识：掌握扎实的基础知识、专业基本原理、⽅法和⼿段，能够将数学、⾃然科学、本专业基础知识和专业知识⽤于解决复杂⼯程问题，并接触和掌握电⼦⾏业部分营运知识，为解决企业电⼦⼯程实际复杂问题打下知识基础。
微电子科学与工程卓越全英班
微电子科学与工程（卓越全英班）Microelectronic Science and Engineering（Excellent English-Taught）专业代码：080704 学制：4年Program Code: 080704Duration: 4 years培养目标：面向国家集成电路发展历史机遇和粤港澳大湾区电子信息技术发展需求，培养德智体全面发展，具有家国情怀和高度社会责任感，具有扎实的基础理论和系统的专门知识，具备宽阔的国际视野、深厚的文化底蕴和优良的综合素质，胜任国际化合作与竞争的复合型集成电路工程精英人才。
Educational Objectives:Facing the historical opportunities of national integrated circuit development and the development needs of electronic information technology in Guangdong, Hong Kong, Macao and Dawan District, we should cultivate advanced integrated circuit technical talents with all-round development of morality, intelligence and physique, national sentiment and high social responsibility, basic training of engineers and comprehensive knowledge: basic knowledge, basic skills and basic qualities of scientific research in the field of microelectronic engineering. It has the ability of international vision, as well as excellent comprehensive quality. As a compound qualified talents who’s capable for international communication and competition in the field of integrated circuits engineering.毕业要求：①工程知识：掌握扎实的基础知识、专业基本原理、方法和手段，能够将数学、自然科学、本专业基础知识和专业知识用于解决复杂工程问题，并接触和掌握电子行业部分营运知识，为解决企业电子工程实际复杂问题打下知识基础。
英语作文-集成电路设计行业：从初学者到专家的必备技能
英语作文-集成电路设计行业：从初学者到专家的必备技能Integrated Circuit Design Industry: Essential Skills from Beginner to Expert。
Introduction:The integrated circuit (IC) design industry plays a crucial role in the development of modern technology. From smartphones to self-driving cars, ICs are the backbone of electronic devices. To excel in this industry, individuals need to acquire a set of essential skills that will take them from being a beginner to an expert. This article aims to provide an overview of these skills and their importance in the IC design industry.1. Solid Foundation in Electronics:A strong understanding of electronics is the foundation of IC design. Beginners should start by learning basic concepts such as Ohm's Law, Kirchhoff's Laws, and semiconductor physics. This knowledge will help them comprehend the behavior of electronic components and their interactions within an IC.2. Proficiency in Programming:Programming skills are becoming increasingly important in IC design. Beginners should focus on learning languages such as Verilog or VHDL, which are widely used in designing digital circuits. These languages allow designers to describe the behavior of their circuits and simulate their functionality before fabrication.3. Knowledge of IC Design Tools:Proficiency in using IC design tools is essential for both beginners and experts. Tools like Cadence or Synopsys provide a platform to design, simulate, and verify ICs. Beginners should familiarize themselves with these tools and learn how to navigate through their various features.4. Understanding of Digital and Analog Design:IC design encompasses both digital and analog circuits. Beginners should acquire a solid understanding of both domains. Digital design involves logic gates, flip-flops, and sequential circuits, while analog design deals with continuous signals and amplifiers. A comprehensive understanding of these concepts is crucial for successful IC design.5. Familiarity with Design Verification:Design verification is the process of ensuring that an IC design meets its specifications. Beginners should learn techniques such as functional simulation, timing analysis, and formal verification. These methods help identify and rectify design flaws, ensuring the reliability and functionality of the final product.6. Knowledge of Low Power Design:In today's world, power efficiency is a critical consideration in IC design. Beginners should be aware of low power design techniques such as clock gating, power gating, and voltage scaling. These techniques help reduce power consumption without compromising the performance of the IC.7. Awareness of Design for Testability:Design for Testability (DFT) is an essential aspect of IC design. It involves incorporating features that facilitate testing and fault diagnosis. Beginners should familiarize themselves with DFT techniques like scan chains, built-in self-test (BIST), and boundary scan. These techniques simplify the testing process, ensuring the quality and reliability of the manufactured IC.8. Continuous Learning and Adaptability:The field of IC design is ever-evolving, with new technologies and methodologies emerging regularly. To stay ahead, individuals must have a thirst for continuous learning and adaptability. Beginners should actively engage in professional development, attend conferences, and keep up with industry trends to enhance their skills and expertise.Conclusion:Becoming an expert in the IC design industry requires a combination of foundational knowledge, technical skills, and adaptability. By acquiring a solid understanding of electronics, programming, IC design tools, digital, and analog design, as well as verification and low power techniques, individuals can progress from being beginners to experts. Furthermore, a commitment to continuous learning and staying updated with industry advancements is crucial for long-term success in this dynamic field. With the right skills and dedication, one can thrive in the exciting world of integrated circuit design.。
微电子专业英语
Abrupt junction 突变结Accelerated testing 加速实验Acceptor 受主Acceptor atom 受主原子Accumulation 积累、堆积Accumulating contact 积累接触Accumulation region 积累区Accumulation layer 积累层Active region 有源区Active component 有源元Active device 有源器件Activation 激活Activation energy 激活能Active region 有源（放大）区Admittance 导纳Allowed band 允带Alloy-junction device合金结器件Aluminum（Aluminium）铝Aluminum - oxide 铝氧化物Aluminum passivation 铝钝化Ambipolar 双极的Ambient temperature 环境温度Amorphous 无定形的，非晶体的Amplifier 功放扩音器放大器Analogue（Analog）comparator 模拟比较器Angstrom 埃Anneal 退火Anisotropic 各向异性的Anode 阳极Arsenic （AS）砷Auger 俄歇Auger process 俄歇过程Avalanche 雪崩Avalanche breakdown 雪崩击穿Avalanche excitation雪崩激发Background carrier 本底载流子Background doping 本底掺杂Backward 反向Backward bias 反向偏置Ballasting resistor 整流电阻Ball bond 球形键合Band 能带Band gap 能带间隙Barrier 势垒Barrier layer 势垒层Barrier width 势垒宽度Base 基极Base contact 基区接触Base stretching 基区扩展效应Base transit time 基区渡越时间Base transport efficiency基区输运系数Base-width modulation基区宽度调制Basis vector 基矢Bias 偏置Bilateral switch 双向开关Binary code 二进制代码Binary compound semiconductor 二元化合物半导体Bipolar 双极性的Bipolar Junction Transistor （BJT）双极晶体管Bloch 布洛赫Blocking band 阻挡能带Blocking contact 阻挡接触Body - centered 体心立方Body-centred cubic structure 体立心结构Boltzmann 波尔兹曼Bond 键、键合Bonding electron 价电子Bonding pad 键合点Bootstrap circuit 自举电路Bootstrapped emitter follower 自举射极跟随器Boron 硼Borosilicate glass 硼硅玻璃Boundary condition 边界条件Bound electron 束缚电子Breadboard 模拟板、实验板Break down 击穿Break over 转折Brillouin 布里渊Brillouin zone 布里渊区Built-in 内建的Build-in electric field 内建电场Bulk 体/体内Bulk absorption 体吸收Bulk generation 体产生Bulk recombination 体复合Burn - in 老化Burn out 烧毁Buried channel 埋沟Buried diffusion region 隐埋扩散区Can 外壳Capacitance 电容Capture cross section 俘获截面Capture carrier 俘获载流子Carrier 载流子、载波Carry bit 进位位Carry-in bit 进位输入Carry-out bit 进位输出Cascade 级联Case 管壳Cathode 阴极Center 中心Ceramic 陶瓷（的）Channel 沟道Channel breakdown 沟道击穿Channel current 沟道电流Channel doping 沟道掺杂Channel shortening 沟道缩短Channel width 沟道宽度Characteristic impedance 特征阻抗Charge 电荷、充电Charge-compensation effects 电荷补偿效应Charge conservation 电荷守恒Charge neutrality condition 电中性条件Charge drive/exchange/sharing/transfer/storage 电荷驱动/交换/共享/转移/存储Chemmical etching 化学腐蚀法Chemically-Polish 化学抛光Chemmically-Mechanically Polish （CMP）化学机械抛光Chip 芯片Chip yield 芯片成品率Clamped 箝位Clamping diode 箝位二极管Cleavage plane 解理面Clock rate 时钟频率Clock generator 时钟发生器Clock flip-flop 时钟触发器Close-packed structure 密堆积结构Close-loop gain 闭环增益Collector 集电极Collision 碰撞Compensated OP-AMP 补偿运放Common-base/collector/emitter connection 共基极/集电极/发射极连接Common-gate/drain/source connection 共栅/漏/源连接Common-mode gain 共模增益Common-mode input 共模输入Common-mode rejection ratio （CMRR）共模抑制比Compatibility 兼容性Compensation 补偿Compensated impurities 补偿杂质Compensated semiconductor 补偿半导体Complementary Darlington circuit 互补达林顿电路Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor（CMOS）互补金属氧化物半导体场效应晶体管Complementary error function 余误差函数Computer-aided design （CAD）/test（CAT）/manufacture（CAM）计算机辅助设计/ 测试/制造Compound Semiconductor 化合物半导体Conductance 电导Conduction band （edge）导带（底）Conduction level/state 导带态Conductor 导体Conductivity 电导率Configuration 组态Conlomb 库仑Conpled Configuration Devices 结构组态Constants 物理常数Constant energy surface 等能面Constant-source diffusion恒定源扩散Contact 接触Contamination 治污Continuity equation 连续性方程Contact hole 接触孔Contact potential 接触电势Continuity condition 连续性条件Contra doping 反掺杂Controlled 受控的Converter 转换器Conveyer 传输器Copper interconnection system 铜互连系统Couping 耦合Covalent 共阶的Crossover 跨交Critical 临界的Crossunder 穿交Crucible坩埚Crystal defect/face/orientation/lattice 晶体缺陷/晶面/晶向/晶格Current density 电流密度Curvature 曲率Cut off 截止Current drift/dirve/sharing 电流漂移/驱动/共享Current Sense 电流取样Curvature 弯曲Custom integrated circuit 定制集成电路Cylindrical 柱面的Czochralshicrystal 直立单晶Czochralski technique 切克劳斯基技术（Cz法直拉晶体J）Dangling bonds 悬挂键Dark current 暗电流Dead time 空载时间Debye length 德拜长度De.broglie 德布洛意Decderate 减速Decibel （dB）分贝Decode 译码Deep acceptor level 深受主能级Deep donor level 深施主能级Deep impurity level 深度杂质能级Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 简并半导体Degeneracy 简并度Degradation 退化Degree Celsius（centigrade）/Kelvin 摄氏/开氏温度Delay 延迟Density 密度Density of states 态密度Depletion 耗尽Depletion approximation 耗尽近似Depletion contact 耗尽接触Depletion depth 耗尽深度Depletion effect 耗尽效应Depletion layer 耗尽层Depletion MOS 耗尽MOSDepletion region 耗尽区Deposited film 淀积薄膜Deposition process 淀积工艺Design rules 设计规则Die 芯片（复数dice）Diode 二极管Dielectric 介电的Dielectric isolation 介质隔离Difference-mode input 差模输入Differential amplifier 差分放大器Differential capacitance 微分电容Diffused junction 扩散结Diffusion 扩散Diffusion coefficient 扩散系数Diffusion constant 扩散常数Diffusivity 扩散率Diffusion capacitance/barrier/current/furnace 扩散电容/势垒/电流/炉Digital circuit 数字电路Dipole domain 偶极畴Dipole layer 偶极层Direct-coupling 直接耦合Direct-gap semiconductor 直接带隙半导体Direct transition 直接跃迁Discharge 放电Discrete component 分立元件Dissipation 耗散Distribution 分布Distributed capacitance 分布电容Distributed model 分布模型Displacement 位移Dislocation 位错Domain 畴Donor 施主Donor exhaustion 施主耗尽Dopant 掺杂剂Doped semiconductor 掺杂半导体Doping concentration 掺杂浓度Double-diffusive MOS（DMOS）双扩散MOS.Drift 漂移Drift field 漂移电场Drift mobility 迁移率Dry etching 干法腐蚀Dry/wet oxidation 干/湿法氧化Dose 剂量Duty cycle 工作周期Dual-in-line package （DIP）双列直插式封装Dynamics 动态Dynamic characteristics 动态属性Dynamic impedance 动态阻抗Early effect 厄利效应Early failure 早期失效Effective mass 有效质量Einstein relation（ship）爱因斯坦关系Electric Erase Programmable Read Only Memory（E2PROM）一次性电可擦除只读存储器Electrode 电极Electrominggratim 电迁移Electron affinity 电子亲和势Electronic -grade 电子能Electron-beam photo-resist exposure 光致抗蚀剂的电子束曝光Electron gas 电子气Electron-grade water 电子级纯水Electron trapping center 电子俘获中心Electron Volt （eV）电子伏Electrostatic 静电的Element 元素/元件/配件Elemental semiconductor 元素半导体Ellipse 椭圆Ellipsoid 椭球Emitter 发射极Emitter-coupled logic 发射极耦合逻辑Emitter-coupled pair 发射极耦合对Emitter follower 射随器Empty band 空带Emitter crowding effect 发射极集边（拥挤）效应Endurance test =life test 寿命测试Energy state 能态Energy momentum diagram 能量-动量（E-K）图Enhancement mode 增强型模式Enhancement MOS 增强性MOS Entefic （低）共溶的Environmental test 环境测试Epitaxial 外延的Epitaxial layer 外延层Epitaxial slice 外延片Expitaxy 外延Equivalent curcuit 等效电路Equilibrium majority /minority carriers 平衡多数/少数载流子Erasable Programmable ROM （EPROM）可搽取（编程）存储器Error function complement （erfc）余误差函数Etch 刻蚀Etchant 刻蚀剂Etching mask 抗蚀剂掩模Excess carrier 过剩载流子Excitation energy 激发能Excited state 激发态Exciton 激子Extrapolation 外推法Extrinsic 非本征的Extrinsic semiconductor 杂质半导体Face - centered 面心立方Fall time 下降时间Fan-in 扇入Fan-out 扇出Fast recovery 快恢复Fast surface states 快界面态Feedback 反馈Fermi level 费米能级Fermi-Dirac Distribution 费米-狄拉克分布Femi potential 费米势Fick equation 菲克方程（扩散）Field effect transistor 场效应晶体管Field oxide 场氧化层Filled band 满带Film 薄膜Flash memory 闪烁存储器Flat band 平带Flat pack 扁平封装Flicker noise 闪烁（变）噪声Flip-flop toggle 触发器翻转Floating gate 浮栅Fluoride etch 氟化氢刻蚀Forbidden band 禁带Forward bias 正向偏置Forward blocking /conducting正向阻断/导通Frequency deviation noise频率漂移噪声Frequency response 频率响应Function 函数Gain 增益Gallium-Arsenide（GaAs）砷化钾Gamy ray r 射线Gate 门、栅、控制极Gate oxide 栅氧化层Gauss（ian）高斯Gaussian distribution profile 高斯掺杂分布Generation-recombination 产生-复合Geometries 几何尺寸Germanium（Ge）锗Graded 缓变的Graded （gradual）channel 缓变沟道Graded junction 缓变结Grain 晶粒Gradient 梯度Grown junction 生长结Guard ring 保护环Gummel-Poom model 葛谋-潘模型Gunn - effect 狄氏效应Hardened device 辐射加固器件Heat of formation 形成热Heat sink 散热器、热沉Heavy/light hole band 重/轻空穴带Heavy saturation 重掺杂Hell - effect 霍尔效应Heterojunction 异质结Heterojunction structure 异质结结构Heterojunction Bipolar Transistor（HBT）异质结双极型晶体High field property 高场特性High-performance MOS.（H-MOS）高性能MOS. Hormalized 归一化Horizontal epitaxial reactor 卧式外延反应器Hot carrior 热载流子Hybrid integration 混合集成Image - force 镜象力Impact ionization 碰撞电离Impedance 阻抗Imperfect structure 不完整结构Implantation dose 注入剂量Implanted ion 注入离子Impurity 杂质Impurity scattering 杂质散射Incremental resistance 电阻增量（微分电阻）In-contact mask 接触式掩模Indium tin oxide （ITO）铟锡氧化物Induced channel 感应沟道Infrared 红外的Injection 注入Input offset voltage 输入失调电压Insulator 绝缘体Insulated Gate FET（IGFET）绝缘栅FET Integrated injection logic集成注入逻辑Integration 集成、积分Interconnection 互连Interconnection time delay 互连延时Interdigitated structure 交互式结构Interface 界面Interference 干涉International system of unions国际单位制Internally scattering 谷间散射Interpolation 内插法Intrinsic 本征的Intrinsic semiconductor 本征半导体Inverse operation 反向工作Inversion 反型Inverter 倒相器Ion 离子Ion beam 离子束Ion etching 离子刻蚀Ion implantation 离子注入Ionization 电离Ionization energy 电离能Irradiation 辐照Isolation land 隔离岛Isotropic 各向同性Junction FET（JFET）结型场效应管Junction isolation 结隔离Junction spacing 结间距Junction side-wall 结侧壁Latch up 闭锁Lateral 横向的Lattice 晶格Layout 版图Lattice binding/cell/constant/defect/distortion 晶格结合力/晶胞/晶格/晶格常熟/晶格缺陷/晶格畸变Leakage current （泄）漏电流Level shifting 电平移动Life time 寿命linearity 线性度Linked bond 共价键Liquid Nitrogen 液氮Liquid－phase epitaxial growth technique 液相外延生长技术Lithography 光刻Light Emitting Diode（LED）发光二极管Load line or Variable 负载线Locating and Wiring 布局布线Longitudinal 纵向的Logic swing 逻辑摆幅Lorentz 洛沦兹Lumped model 集总模型Majority carrier 多数载流子Mask 掩膜板，光刻板Mask level 掩模序号Mask set 掩模组Mass - action law质量守恒定律Master-slave D flip-flop主从D触发器Matching 匹配Maxwell 麦克斯韦Mean free path 平均自由程Meandered emitter junction梳状发射极结Mean time before failure （MTBF）平均工作时间Megeto - resistance 磁阻Mesa 台面MESFET-Metal Semiconductor金属半导体FETMetallization 金属化Microelectronic technique 微电子技术Microelectronics 微电子学Millen indices 密勒指数Minority carrier 少数载流子Misfit 失配Mismatching 失配Mobile ions 可动离子Mobility 迁移率Module 模块Modulate 调制Molecular crystal分子晶体Monolithic IC 单片IC MOSFET金属氧化物半导体场效应晶体管Mos. Transistor（MOST ）MOS. 晶体管Multiplication 倍增Modulator 调制Multi-chip IC 多芯片ICMulti-chip module（MCM）多芯片模块Multiplication coefficient倍增因子Naked chip 未封装的芯片（裸片）Negative feedback 负反馈Negative resistance 负阻Nesting 套刻Negative-temperature-coefficient 负温度系数Noise margin 噪声容限Nonequilibrium 非平衡Nonrolatile 非挥发（易失）性Normally off/on 常闭/开Numerical analysis 数值分析Occupied band 满带Officienay 功率Offset 偏移、失调On standby 待命状态Ohmic contact 欧姆接触Open circuit 开路Operating point 工作点Operating bias 工作偏置Operational amplifier （OPAMP）运算放大器Optical photon =photon 光子Optical quenching光猝灭Optical transition 光跃迁Optical-coupled isolator光耦合隔离器Organic semiconductor有机半导体Orientation 晶向、定向Outline 外形Out-of-contact mask非接触式掩模Output characteristic 输出特性Output voltage swing 输出电压摆幅Overcompensation 过补偿Over-current protection 过流保护Over shoot 过冲Over-voltage protection 过压保护Overlap 交迭Overload 过载Oscillator 振荡器Oxide 氧化物Oxidation 氧化Oxide passivation 氧化层钝化Package 封装Pad 压焊点Parameter 参数Parasitic effect 寄生效应Parasitic oscillation 寄生振荡Passination 钝化Passive component 无源元件Passive device 无源器件Passive surface 钝化界面Parasitic transistor 寄生晶体管Peak-point voltage 峰点电压Peak voltage 峰值电压Permanent-storage circuit 永久存储电路Period 周期Periodic table 周期表Permeable - base 可渗透基区Phase-lock loop 锁相环Phase drift 相移Phonon spectra 声子谱Photo conduction 光电导Photo diode 光电二极管Photoelectric cell 光电池Photoelectric effect 光电效应Photoenic devices 光子器件Photolithographic process 光刻工艺（photo）resist （光敏）抗腐蚀剂Pin 管脚Pinch off 夹断Pinning of Fermi level 费米能级的钉扎（效应）Planar process 平面工艺Planar transistor 平面晶体管Plasma 等离子体Plezoelectric effect 压电效应Poisson equation 泊松方程Point contact 点接触Polarity 极性Polycrystal 多晶Polymer semiconductor聚合物半导体Poly-silicon 多晶硅Potential （电）势Potential barrier 势垒Potential well 势阱Power dissipation 功耗Power transistor 功率晶体管Preamplifier 前置放大器Primary flat 主平面Principal axes 主轴Print-circuit board（PCB）印制电路板Probability 几率Probe 探针Process 工艺Propagation delay 传输延时Pseudopotential method 膺势发Punch through 穿通Pulse triggering/modulating 脉冲触发/调制Pulse Widen Modulator（PWM）脉冲宽度调制punchthrough 穿通Push-pull stage 推挽级Quality factor 品质因子Quantization 量子化Quantum 量子Quantum efficiency量子效应Quantum mechanics 量子力学Quasi - Fermi－level准费米能级Quartz 石英Radiation conductivity 辐射电导率Radiation damage 辐射损伤Radiation flux density 辐射通量密度Radiation hardening 辐射加固Radiation protection 辐射保护Radiative - recombination辐照复合Radioactive 放射性Reach through 穿通Reactive sputtering source 反应溅射源Read diode 里德二极管Recombination 复合Recovery diode 恢复二极管Reciprocal lattice 倒核子Recovery time 恢复时间Rectifier 整流器（管）Rectifying contact 整流接触Reference 基准点基准参考点Refractive index 折射率Register 寄存器Registration 对准Regulate 控制调整Relaxation lifetime 驰豫时间Reliability 可*性Resonance 谐振Resistance 电阻Resistor 电阻器Resistivity 电阻率Regulator 稳压管（器）Relaxation 驰豫Resonant frequency共射频率Response time 响应时间Reverse 反向的Reverse bias 反向偏置Sampling circuit 取样电路Sapphire 蓝宝石（Al2O3）Satellite valley 卫星谷Saturated current range电流饱和区Saturation region 饱和区Saturation 饱和的Scaled down 按比例缩小Scattering 散射Schockley diode 肖克莱二极管Schottky 肖特基Schottky barrier 肖特基势垒Schottky contact 肖特基接触Schrodingen 薛定厄Scribing grid 划片格Secondary flat 次平面Seed crystal 籽晶Segregation 分凝Selectivity 选择性Self aligned 自对准的Self diffusion 自扩散Semiconductor 半导体Semiconductor-controlled rectifier 可控硅Sendsitivity 灵敏度Serial 串行/串联Series inductance 串联电感Settle time 建立时间Sheet resistance 薄层电阻Shield 屏蔽Short circuit 短路Shot noise 散粒噪声Shunt 分流Sidewall capacitance 边墙电容Signal 信号Silica glass 石英玻璃Silicon 硅Silicon carbide 碳化硅Silicon dioxide （SiO2）二氧化硅Silicon Nitride（Si3N4）氮化硅Silicon On Insulator 绝缘硅Siliver whiskers 银须Simple cubic 简立方Single crystal 单晶Sink 沉Skin effect 趋肤效应Snap time 急变时间Sneak path 潜行通路Sulethreshold 亚阈的Solar battery/cell 太阳能电池Solid circuit 固体电路Solid Solubility 固溶度Sonband 子带Source 源极Source follower 源随器Space charge 空间电荷Specific heat（PT）热Speed-power product 速度功耗乘积Spherical 球面的Spin 自旋Split 分裂Spontaneous emission 自发发射Spreading resistance扩展电阻Sputter 溅射Stacking fault 层错Static characteristic 静态特性Stimulated emission 受激发射Stimulated recombination 受激复合Storage time 存储时间Stress 应力Straggle 偏差Sublimation 升华Substrate 衬底Substitutional 替位式的Superlattice 超晶格Supply 电源Surface 表面Surge capacity 浪涌能力Subscript 下标Switching time 开关时间Switch 开关Tailing 扩展Terminal 终端Tensor 张量Tensorial 张量的Thermal activation 热激发Thermal conductivity 热导率Thermal equilibrium 热平衡Thermal Oxidation 热氧化Thermal resistance 热阻Thermal sink 热沉Thermal velocity 热运动Thermoelectricpovoer 温差电动势率Thick-film technique 厚膜技术Thin-film hybrid IC薄膜混合集成电路Thin-Film Transistor（TFT）薄膜晶体Threshlod 阈值Thyistor 晶闸管Transconductance 跨导Transfer characteristic 转移特性Transfer electron 转移电子Transfer function 传输函数Transient 瞬态的Transistor aging（stress）晶体管老化Transit time 渡越时间Transition 跃迁Transition-metal silica 过度金属硅化物Transition probability 跃迁几率Transition region 过渡区Transport 输运Transverse 横向的Trap 陷阱Trapping 俘获Trapped charge 陷阱电荷Triangle generator 三角波发生器Triboelectricity 摩擦电Trigger 触发Trim 调配调整Triple diffusion 三重扩散Truth table 真值表Tolerahce 容差Tunnel（ing）隧道（穿）Tunnel current 隧道电流Turn over 转折Turn - off time 关断时间Ultraviolet 紫外的Unijunction 单结的Unipolar 单极的Unit cell 原（元）胞Unity-gain frequency 单位增益频率Unilateral-switch单向开关Vacancy 空位Vacuum 真空Valence（value）band 价带Value band edge 价带顶Valence bond 价键Vapour phase 汽相Varactor 变容管Varistor 变阻器Vibration 振动Voltage 电压Wafer 晶片Wave equation 波动方程Wave guide 波导Wave number 波数Wave-particle duality 波粒二相性Wear-out 烧毁Wire routing 布线Work function 功函数Worst-case device 最坏情况器件Yield 成品率Zener breakdown 齐纳击穿。
电子科学与技术专业英语(微电子学,大四)
Chapter 4 集成电路4.1 简介本章的简介将表明设计自动化在应对目前集成电路复杂度的令人瞩目的增长中扮演着一个重要的角色。
设计一个百万级别的晶体管电路并且确保其能够在第一个硅片被生产出来时正确地运作，是一项令人却步的在没有电脑助手和已确定的设计方法的帮助下是几乎不可能完成的任务。
一般而言，可供设计者选择的工具广泛的范围可被细分为几个大类。
•分析和验证工具是用于检查一个电路的响应并且帮助判定该响应是否符合规范范围。
•执行和综合的方法在生产及优化电路图或者是电路布局上帮助设计者。
•可测试性技术为一个装配式的设计的功能验证提供了一种设计方法和CAD工具的组合。
本章呈现的是对在上述那些分类之中的领军技术的简要概述。
由于其领域的广泛性，我们不打算如此广泛地去进行描述。
因为这样做的话，本章将会成为一本独立的教科书。
取而代之的是，我们将介绍一种用户的观点从而提供一种基本的看法并洞察这些不同的设计方法提供了什么以及我们可以从中期待些什么。
这些信息必须足够令一个新手设计师能够开个好头。
对深入讨论各种工具和环境的技术感兴趣的读者们可以参考相关话题的参考书，这些参考书有部分被列在参考文献里。
4.2 设计分析与仿真一个设计师对设计自动化的最首要的期待是精确高速的分析工具的有效性。
第一个获得广泛接受的CAD工具是SPICE电路仿真器，而且这毫无疑问的是目前最有效益的数字电路的电脑辅助工具。
然而，电路仿真会考虑一个半导体器件的所有的特性以及二阶效应以至于变得很耗时。
当设计复杂电路的时候它就快速地变得笨重了起来，除非有人愿意在计算时间上花上好几天。
设计师可以通过放弃建模精度以及诉诸于更高的描述水平来解决这复杂的问题。
对于设计师们可用的不同抽象层次以及这些层次对仿真精度的影响的讨论是本节的主题。
就此，区分仿真和验证是十分有用的。
在仿真方法中，设计参数的值，例如噪声容限、传输延迟、或者是耗散能，都是通过向电路模型施加一组激励向量，并且从所获得的波形信号中选择和提取参数得来的。
微电子专用词汇
Abe absorb in 集中精力做某事access control list 访问控制表active attack 主动攻击activeX control ActiveX控件advanced encryption standard AES,高级加密标准algorithm 算法alteration of message 改变消息application level attack 应用层攻击argument 变量asymmetric key cryptography 非对称密钥加密attribute certificate属性证书authentication 鉴别authority 机构availability 可用性Abrupt junction 突变结Accelerated testing 加速实验Acceptor 受主Acceptor atom 受主原子Accumulation 积累、堆积Accumulating contact 积累接触Accumulation region 积累区Accumulation layer 积累层Active region 有源区Active component 有源元Active device 有源器件Activation 激活Activation energy 激活能Active region 有源（放大）区Admittance 导纳Allowed band 允带Alloy-junction device 合金结器件Aluminum(Aluminium) 铝Aluminum – oxide 铝氧化物Aluminum passivation 铝钝化Ambipolar 双极的Ambient temperature 环境温度Amorphous 无定形的，非晶体的Amplifier 功放扩音器放大器Analogue(Analog) comparator 模拟比较器Angstrom 埃Anneal 退火Anisotropic 各向异性的Anode 阳极Arsenic (AS) 砷Auger 俄歇Auger process 俄歇过程Avalanche 雪崩Avalanche breakdown 雪崩击穿Avalanche excitation 雪崩激发Bbrute-force attack 强力攻击Background carrier 本底载流子Background doping 本底掺杂Backward 反向Backward bias 反向偏置Ballasting resistor 整流电阻Ball bond 球形键合Band 能带Band gap 能带间隙Barrier 势垒Barrier layer 势垒层Barrier width 势垒宽度Base 基极Base contact 基区接触Base stretching 基区扩展效应Base transit time 基区渡越时间Base transport efficiency 基区输运系数Base-width modulation 基区宽度调制Basis vector 基矢Bias 偏置Bilateral switch 双向开关Binary code 二进制代码Binary compound semiconductor 二元化合物半导体Bipolar 双极性的Bipolar Junction Transistor (BJT) 双极晶体管Bloch 布洛赫Blocking band 阻挡能带Blocking contact 阻挡接触Body - centered 体心立方Body-centred cubic structure 体立心结构Boltzmann 波尔兹曼Bond 键、键合Bonding electron 价电子Bonding pad 键合点Bootstrap circuit 自举电路Bootstrapped emitter follower 自举射极跟随器Boron 硼Borosilicate glass 硼硅玻璃Boundary condition 边界条件Bound electron 束缚电子Breadboard 模拟板、实验板Break down 击穿Break over 转折Brillouin 布里渊Brillouin zone 布里渊区Built-in 内建的Build-in electric field 内建电场Bulk 体 / 体内Bulk absorption 体吸收Bulk generation 体产生Bulk recombination 体复合Burn - in 老化Burn out 烧毁Buried channel 埋沟Buried diffusion region 隐埋扩散区CCaesar cipher 凯撒加密法capacitance 电容capturecategorize 分类chaining mode 链接模式challenge 质询cipher feedback 加密反馈collision 冲突combine 集成compatibility n.[计]兼容性component 原件confidentiality 保密性constraint 约束corresponding to 相应的Cryptography 密码学Can 外壳 Capacitance 电容Capture cross section 俘获截面Capture carrier 俘获载流子Carrier 载流子、载波Carry bit 进位位Carry-in bit 进位输入Carry-out bit 进位输出Cascade 级联Case 管壳Cathode 阴极Center 中心Ceramic 陶瓷（的）Channel 沟道Channel breakdown 沟道击穿Channel current 沟道电流Channel doping 沟道掺杂Channel shortening 沟道缩短Channel width 沟道宽度Characteristic impedance 特征阻抗Charge 电荷、充电Charge-compensation effects 电荷补偿效应Charge conservation 电荷守恒Charge neutrality condition 电中性条件Chargedrive/exchange/sharing/transfer/stor age 电荷驱动 / 交换 / 共享 / 转移 / 存储Chemmical etching 化学腐蚀法Chemically-Polish 化学抛光Chemmically-Mechanically Polish (CMP) 化学机械抛光Chip 芯片Chip yield 芯片成品率Clamped 箝位Clamping diode 箝位二极管Cleavage plane 解理面Clock rate 时钟频率Clock generator 时钟发生器Clock flip-flop 时钟触发器Close-packed structure 密堆积结构Close-loop gain 闭环增益Collector 集电极Collision 碰撞Compensated OP-AMP 补偿运放Common-base/collector/emitter connection 共基极 / 集电极 / 发射极连接Common-gate/drain/source connection 共栅 / 漏 / 源连接Common-mode gain 共模增益Common-mode input 共模输入Common-mode rejection ratio (CMRR) 共模抑制比Compatibility 兼容性Compensation 补偿Compensated impurities 补偿杂质Compensated semiconductor 补偿半导体Complementary Darlington circuit 互补达林顿电路ComplementaryMetal-Oxide-SemiconductorField-Effect-Transistor(CMOS)互补金属氧化物半导体场效应晶体管Complementary error function 余误差函数Compound Semiconductor 化合物半导体Conductance 电导Conduction band (edge) 导带 ( 底 ) Conduction level/state 导带态Conductor 导体Conductivity 电导率Configuration 组态Conlomb 库仑Conpled Configuration Devices 结构组态 Constants 物理常数Constant energy surface 等能面Constant-source diffusion 恒定源扩散Contact 接触 Contamination 治污Continuity equation 连续性方程Contact hole 接触孔Contact potential 接触电势Continuity condition 连续性条件Contra doping 反掺杂Controlled 受控的Converter 转换器Conveyer 传输器Copper interconnection system 铜互连系统Couping 耦合Covalent 共阶的Crossover 跨交Critical 临界的Crossunder 穿交Crucible 坩埚Crystaldefect/face/orientation/lattice晶体缺陷 / 晶面 / 晶向 / 晶格Current density 电流密度Curvature 曲率Cut off 截止Current drift/dirve/sharing电流漂移 / 驱动 / 共享Current Sense 电流取样Curvature 弯曲Custom integrated circuit 定制集成电路 Cylindrical 柱面的Czochralshicrystal 直立单晶Czochralski technique 切克劳斯基技术（ Cz 法直拉晶体 J ）Ddedicate 专用的，单一的denial of service(DOS)拒绝服务攻击diffusion 扩散digital signature algorithm 数字签名算法dynamic 动态的Dangling bonds 悬挂键Dark current 暗电流Dead time 空载时间Debye length 德拜长度De.broglie 德布洛意Decderate 减速Decibel (dB) 分贝Decode 译码Deep acceptor level 深受主能级Deep donor level 深施主能级Deep impurity level 深度杂质能级Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 简并半导体Degeneracy 简并度Degradation 退化Degree Celsius(centigrade) /Kelvin 摄氏 / 开氏温度Delay 延迟Density 密度Density of states 态密度Depletion 耗尽Depletion approximation 耗尽近似Depletion contact 耗尽接触Depletion depth 耗尽深度Depletion effect 耗尽效应Depletion layer 耗尽层Depletion MOS 耗尽 MOSDepletion region 耗尽区Deposited film 淀积薄膜Deposition process 淀积工艺Design rules 设计规则Die 芯片（复数 dice ）Diode 二极管Dielectric 介电的Dielectric isolation 介质隔离Difference-mode input 差模输入Differential amplifier 差分放大器Differential capacitance 微分电容Diffused junction 扩散结Diffusion 扩散Diffusion coefficient 扩散系数Diffusion constant 扩散常数Diffusivity 扩散率Diffusioncapacitance/barrier/current/furnace 扩散电容 / 势垒 / 电流 / 炉Digital circuit 数字电路Dipole domain 偶极畴Dipole layer 偶极层Direct-coupling 直接耦合Direct-gap semiconductor 直接带隙半导体Direct transition 直接跃迁Discharge 放电Discrete component 分立元件Dissipation 耗散Distribution 分布Distributed capacitance 分布电容istributed model 分布模型Displacement 位移Dislocation 位错Domain 畴Donor 施主Donor exhaustion 施主耗尽Dopant 掺杂剂Doped semiconductor 掺杂半导体oping concentration 掺杂浓度Double-diffusive MOS(DMOS) 双扩散MOS. Drift 漂移Drift field 漂移电场Drift mobility 迁移率Dry etching 干法腐蚀Dry/wet oxidation 干 / 湿法氧化Dose 剂量Duty cycle 工作周期Dual-in-line package （ DIP ）双列直插式封装Dynamics 动态Dynamic characteristics 动态属性Dynamic impedance 动态阻抗Eexpertise 专长extractorEarly effect 厄利效应Early failure 早期失效Effective mass 有效质量Einstein relation(ship) 爱因斯坦关系Electric Erase Programmable Read Only Memory(E2PROM) 一次性电可擦除只读存储器Electrode 电极Electrominggratim 电迁移Electron affinity 电子亲和势Electronic -grade 电子能Electron-beam photo-resist exposure 光致抗蚀剂的电子束曝光Electron gas 电子气Electron-grade water 电子级纯水Electron trapping center 电子俘获中心Electron Volt (eV) 电子伏Electrostatic 静电的Element 元素 / 元件 / 配件Elemental semiconductor 元素半导体Ellipse 椭圆Ellipsoid 椭球Emitter 发射极Emitter-coupled logic 发射极耦合逻辑Emitter-coupled pair 发射极耦合对Emitter follower 射随器Empty band 空带Emitter crowding effect 发射极集边（拥挤）效应Endurance test =life test 寿命测试Energy state 能态Energy momentum diagram 能量 - 动量(E-K) 图 Enhancement mode 增强型模式Enhancement MOS 增强性MOS Entefic ( 低 ) 共溶的Environmental test 环境测试Epitaxial 外延的Epitaxial layer 外延层Epitaxial slice 外延片Expitaxy 外延Equivalent curcuit 等效电路Equilibrium majority /minority carriers 平衡多数 / 少数载流子Erasable Programmable ROM (EPROM) 可搽取（编程）存储器Error function complement 余误差函数Etch 刻蚀Etchant 刻蚀剂Etching mask 抗蚀剂掩模Excess carrier 过剩载流子Excitation energy 激发能Excited state 激发态Exciton 激子Extrapolation 外推法Extrinsic 非本征的Extrinsic semiconductor 杂质半导体Ffabrication 伪造fleshed outFace - centered 面心立方Fall time 下降时间Fan-in 扇入Fan-out 扇出Fast recovery 快恢复Fast surface states 快界面态Feedback 反馈Fermi level 费米能级Fermi-Dirac Distribution 费米 - 狄拉克布Femi potential 费米势Fick equation 菲克方程（扩散）Field effect transistor 场效应晶体管Field oxide 场氧化层Filled band 满带Film 薄膜Flash memory 闪烁存储器Flat band 平带Flat pack 扁平封装Flicker noise 闪烁（变）噪声Flip-flop toggle 触发器翻转Floating gate 浮栅Fluoride etch 氟化氢刻蚀Forbidden band 禁带Forward bias 正向偏置Forward blocking /conducting 正向阻断 / 导通Frequency deviation noise频率漂移噪声Frequency response 频率响应Function 函数GgridGain 增益Gallium-Arsenide(GaAs) 砷化钾Gamy ray r 射线Gate 门、栅、控制极Gate oxide 栅氧化层Gauss （ ian ）高斯Gaussian distribution profile 高斯掺杂分布Generation-recombination 产生 - 复合Geometries 几何尺寸Germanium(Ge) 锗Graded 缓变的Graded (gradual) channel 缓变沟道Graded junction 缓变结Grain 晶粒Gradient 梯度Grown junction 生长结Guard ring 保护环Gummel-Poom model 葛谋 - 潘模型Gunn - effect 狄氏效应Hhandle 处理hierarchical 层次Hardened device 辐射加固器件Heat of formation 形成热Heat sink 散热器、热沉Heavy/light hole band 重/轻空穴带Heavy saturation 重掺杂Hell - effect 霍尔效应Heterojunction 异质结Heterojunction structure 异质结结构Heterojunction Bipolar Transistor （ HBT ）异质结双极型晶体High field property 高场特性High-performance MOS.( H-MOS) 高性能 MOS.Hormalized 归一化Horizontal epitaxial reactor 卧式外延反应器Hot carrior 热载流子Hybrid integration 混合集成Iimplementinductance 电感initialization vector IV初始化向量integrity完整性interception 截获interruption中断Image - force 镜象力Impact ionization 碰撞电离Impedance 阻抗Imperfect structure 不完整结构Implantation dose 注入剂量Implanted ion 注入离子Impurity 杂质Impurity scattering 杂志散射Incremental resistance 电阻增量（微分电阻）In-contact mask 接触式掩模Indium tin oxide (ITO) 铟锡氧化物Induced channel 感应沟道Infrared 红外的Injection 注入Input offset voltage 输入失调电压Insulator 绝缘体Insulated Gate FET(IGFET) 绝缘栅FET Integrated injection logic 集成注入逻辑Integration 集成、积分Interconnection 互连Interconnection time delay 互连延时Interdigitated structure 交互式结构Interface 界面Interference 干涉International system of unions 国际单位制Internally scattering 谷间散射Interpolation 内插法Intrinsic 本征的Intrinsic semiconductor 本征半导体Inverse operation 反向工作Inversion 反型Inverter 倒相器Ion 离子Ion beam 离子束Ion etching 离子刻蚀Ion implantation 离子注入Ionization 电离Ionization energy 电离能Irradiation 辐照Isolation land 隔离岛Isotropic 各向同性Jjava applet Java小程序Junction FET(JFET) 结型场效应管Junction isolation 结隔离Junction spacing 结间距Junction side-wall 结侧壁Kkey wrapping 密钥包装LLatch up 闭锁Lateral 横向的Lattice 晶格Layout 版图Latticebinding/cell/constant/defect/distort ion 晶格结合力 / 晶胞 / 晶格 / 晶格常熟 / 晶格缺陷 / 晶格畸变Leakage current （泄）漏电流Level shifting 电平移动Life time 寿命linearity 线性度Linked bond 共价键Liquid Nitrogen 液氮Liquid － phase epitaxial growth technique 液相外延生长技术Lithography 光刻Light Emitting Diode(LED) 发光二极管Load line or Variable 负载线Locating and Wiring 布局布线Longitudinal 纵向的Logic swing 逻辑摆幅Lorentz 洛沦兹Lumped model 集总模型Mmasquerade伪装message digest 消息摘要modification 修改multidrop 多站, 多支路Majority carrier 多数载流子Mask 掩膜板，光刻板Mask level 掩模序号Mask set 掩模组Mass - action law 质量守恒定律Master-slave D flip-flop 主从 D 触发器Matching 匹配Maxwell 麦克斯韦Mean free path 平均自由程Meandered emitter junction 梳状发射极结Mean time before failure (MTBF) 平均工作时间Megeto - resistance 磁阻Mesa 台面MESFET-Metal Semiconductor 金属半导体 FETMetallization 金属化Microelectronic technique 微电子技术Microelectronics 微电子学Millen indices 密勒指数Minority carrier 少数载流子Misfit 失配Mismatching 失配Mobile ions 可动离子Mobility 迁移率Module 模块Modulate 调制Molecular crystal 分子晶体Monolithic IC 单片 ICMOSFET 金属氧化物半导体场效应晶体管Mos. Transistor(MOST )MOS. 晶体管Multiplication 倍增Modulator 调制Multi-chip IC 多芯片 ICMulti-chip module(MCM) 多芯片模块Multiplication coefficient 倍增因子Nnetwork level attack网络层攻击non-repudiation 不可抵赖Naked chip 未封装的芯片（裸片）Negative feedback 负反馈Negative resistance 负阻Nesting 套刻Negative-temperature-coefficient 负温度系数Noise margin 噪声容限Nonequilibrium 非平衡Nonrolatile 非挥发（易失）性 Normally off/on 常闭 / 开 Numerical analysis 数值分析Ooptimize 使最优化Occupied band 满带Officienay 功率Offset 偏移、失调On standby 待命状态Ohmic contact 欧姆接触Open circuit 开路Operating point 工作点Operating bias 工作偏置Operational amplifier (OPAMP) 运算放大器Optical photon =photon 光子Optical quenching 光猝灭Optical transition 光跃迁Optical-coupled isolator 光耦合隔离器Organic semiconductor 有机半导体Orientation 晶向、定向Outline 外形Out-of-contact mask 非接触式掩模Output characteristic 输出特性Output voltage swing 输出电压摆幅Overcompensation 过补偿Over-current protection 过流保护Over shoot 过冲Over-voltage protection 过压保护Overlap 交迭Overload 过载Oscillator 振荡器Oxide 氧化物Oxidation 氧化Oxide passivation 氧化层钝化Pparallelparasitic 寄生的partition [简明英汉词典]n.分割, 划分, 瓜分, 分开, 隔离物vt.区分, 隔开, 分割presentation n.介绍, 陈述, 赠送, 表达primitiveprivateprobablyproceedingprofoundpropertypseudocollision伪冲突Package 封装Pad 压焊点Parameter 参数Parasitic effect 寄生效应Parasitic oscillation 寄生振荡Passination 钝化Passive component 无源元件Passive device 无源器件Passive surface 钝化界面Parasitic transistor 寄生晶体管Peak-point voltage 峰点电压Peak voltage 峰值电压Permanent-storage circuit 永久存储电路Period 周期Periodic table 周期表Permeable - base 可渗透基区Phase-lock loop 锁相环Phase drift 相移Phonon spectra 声子谱Photo conduction 光电导Photo diode 光电二极管Photoelectric cell 光电池Photoelectric effect 光电效应Photoenic devices 光子器件Photolithographic process 光刻工艺(photo) resist （光敏）抗腐蚀剂Pin 管脚Pinch off 夹断Pinning of Fermi level 费米能级的钉扎（效应）Planar process 平面工艺Planar transistor 平面晶体管Plasma 等离子体Plezoelectric effect 压电效应Poisson equation 泊松方程Point contact 点接触Polarity 极性Polycrystal 多晶Polymer semiconductor 聚合物半导体Poly-silicon 多晶硅Potential ( 电 ) 势 Potential barrier 势垒Potential well 势阱Power dissipation 功耗Power transistor 功率晶体管Preamplifier 前置放大器Primary flat 主平面Principal axes 主轴Print-circuit board(PCB) 印制电路板Probability 几率Probe 探针Process 工艺Propagation delay 传输延时Pseudopotential method 膺势发Punch through 穿通Pulse triggering/modulating 脉冲触发/ 调制Pulse Widen Modulator(PWM) 脉冲宽度调制Punchthrough 穿通Push-pull stage 推挽级QQuality factor 品质因子Quantization 量子化Quantum 量子Quantum efficiency 量子效应Quantum mechanics 量子力学Quasi – Fermi － level 准费米能级Quartz 石英Rrelease of message contents发布消息内容register 寄存器registration 注册, 报到, 登记resistance 电阻routingrunning key cipher 运动密钥加密法Radiation conductivity 辐射电导率Radiation damage 辐射损伤Radiation flux density 辐射通量密度Radiation hardening 辐射加固Radiation protection 辐射保护Radiative - recombination 辐照复合Radioactive 放射性Reach through 穿通Reactive sputtering source 反应溅射源Read diode 里德二极管Recombination 复合Recovery diode 恢复二极管Reciprocal lattice 倒核子Recovery time 恢复时间Rectifier 整流器（管）Rectifying contact 整流接触Reference 基准点基准参考点Refractive index 折射率Register 寄存器Registration 对准Regulate 控制调整Relaxation lifetime 驰豫时间Reliability 可*性Resonance 谐振Resistance 电阻Resistor 电阻器Resistivity 电阻率Regulator 稳压管（器）Relaxation 驰豫Resonant frequency 共射频率Response time 响应时间Reverse 反向的Reverse bias 反向偏置Sscratchscratchpad 缓存secret 密钥substrate 衬底synchronizesynthesizesymmetric key cryptography 对称密钥加密sophisticate 复杂的suspend 悬挂，延缓Sampling circuit 取样电路Sapphire 蓝宝石（ Al2O3 ）Satellite valley 卫星谷Saturated current range 电流饱和区Saturation region 饱和区Saturation 饱和的Scaled down 按比例缩小Scattering 散射Schockley diode 肖克莱二极管Schottky 肖特基Schottky barrier 肖特基势垒Schottky contact 肖特基接触Schrodingen 薛定厄Scribing grid 划片格Secondary flat 次平面Seed crystal 籽晶Segregation 分凝Selectivity 选择性Self aligned 自对准的Self diffusion 自扩散Semiconductor 半导体Semiconductor-controlled rectifier 可控硅Sendsitivity 灵敏度Serial 串行 / 串联Series inductance 串联电感Settle time 建立时间Sheet resistance 薄层电阻Shield 屏蔽Short circuit 短路Shot noise 散粒噪声Shunt 分流Sidewall capacitance 边墙电容Signal 信号Silica glass 石英玻璃Silicon 硅Silicon carbide 碳化硅Silicon dioxide (SiO2) 二氧化硅Silicon Nitride(Si3N4) 氮化硅Silicon On Insulator 绝缘硅Siliver whiskers 银须Simple cubic 简立方Single crystal 单晶Sink 沉Skin effect 趋肤效应Snap time 急变时间Sneak path 潜行通路Sulethreshold 亚阈的Solar battery/cell 太阳能电池Solid circuit 固体电路Solid Solubility 固溶度Sonband 子带Source 源极Source follower 源随器Space charge 空间电荷Specific heat(PT) 热Speed-power product 速度功耗乘积Spherical 球面的Spin 自旋Split 分裂Spontaneous emission 自发发射Spreading resistance 扩展电阻Sputter 溅射Stacking fault 层错Static characteristic 静态特性Stimulated emission 受激发射Stimulated recombination 受激复合Storage time 存储时间Stress 应力Straggle 偏差Sublimation 升华Substrate 衬底Substitutional 替位式的Superlattice 超晶格Supply 电源Surface 表面Surge capacity 浪涌能力Subscript 下标Switching time 开关时间Switch 开关Ttoken 令牌trace 追溯traffic analysis 分析通信量Trojan horse 特洛伊木马Tailing 扩展Terminal 终端Tensor 张量Tensorial 张量的Thermal activation 热激发Thermal conductivity 热导率Thermal equilibrium 热平衡Thermal Oxidation 热氧化Thermal resistance 热阻Thermal sink 热沉Thermal velocity 热运动Thermoelectricpovoer 温差电动势率Thick-film technique 厚膜技术Thin-film hybrid IC 薄膜混合集成电路Thin-Film Transistor(TFT) 薄膜晶体Threshlod 阈值Thyistor 晶闸管Transconductance 跨导Transfer characteristic 转移特性Transfer electron 转移电子Transfer function 传输函数Transient 瞬态的Transistor aging(stress) 晶体管老化Transit time 渡越时间Transition 跃迁Transition-metal silica 过度金属硅化物Transition probability 跃迁几率Transition region 过渡区Transport 输运Transverse 横向的Trap 陷阱Trapping 俘获Trapped charge 陷阱电荷Triangle generator 三角波发生器Triboelectricity 摩擦电Trigger 触发Trim 调配调整Triple diffusion 三重扩散Truth table 真值表Tolerahce 容差Tunnel(ing) 隧道（穿）Tunnel current 隧道电流Turn over 转折Turn - off time 关断时间UUltraviolet 紫外的Unijunction 单结的Unipolar 单极的Unit cell 原（元）胞Unity-gain frequency 单位增益频率Unilateral-switch 单向开关Vvarietyvectorverify 检验victoryverticalvia 通孔virus 病毒Vacancy 空位Vacuum 真空Valence(value) band 价带Value band edge 价带顶Valence bond 价键Vapour phase 汽相Varactor 变容管Varistor 变阻器Vibration 振动Voltage 电压WWorm 蠕虫Wafer 晶片Wave equation 波动方程Wave guide 波导Wave number 波数Wave-particle duality 波粒二相性Wear-out 烧毁Wire routing 布线Work function 功函数Worst-case device 最坏情况器件XxYYield 成品率ZZener breakdown 齐纳击穿Zone melting 区熔法。
微电子专业英文翻译
Embedded Processor Based Automatic TemperatureControl of VLSI ChipsAbstractThis paper presents embedded processor based automatic temperature control of VLSI chips, using temperature sensor LM35 and ARM processor LPC2378. Due to the very high packing density, VLSI chips get heated very soon and if not cooled properly, the performance is very much affected. In the present work, the sensor which is kept very near proximity to the IC will sense the temperature and the speed of the fan arranged near to the IC is controlled based on the PWM signal generated by the ARM processor. A buzzer is also provided with the hardware, to indicate either the failure of the fan or overheating of the IC. The entire process is achieved by developing a suitable embedded C program.Keywords: Temperature sensor, ARM processor, VLSI chips, Brushless DC motor1.IntroductionWith the phenomenal developments in VLSI technology, the ambitious IC designers are trying to put more transistors in to smaller packages. So, the ICs run at higher speeds and produce large amount of heat which creates the problem of thermal management. For example, nowadays the CPU chips are becoming smaller and smaller with almost no room for the heat to escape. The total power dissipation levels now reside on the order of 100 W with a peak power density of 400-500 W/Cm2, and are still steadily climbing.As the chip temperature increases its performance is very much degraded by parameters shift, decrease in operating frequencies and out-of specification of timings. So the high speed chips must be cooled to maintain good performance for the longest possible operating time and over the widest possible range of environmental conditions. The maximum allowable temperature for a high speed chip to meet its parametric specifications depends on the process and how the chip is designed.Among the various cooling techniques, heat sinks, heat pipes, fans and clock throttling are usually employed. Among these techniques, fans can dramatically reduce the temperature of a high speed chip,but they also generate a great deal of acoustic noise. This noise can be reduced significantly by varying ,the fans speed based on temperature i.e. the fan can turn slowly when the temperature is low and canspeed up as the temperature increases.The other prominent method is clock throttling i.e. reducing the clock speed to reduce power dissipation. But it also reduces the system performance and the systems functionality is lost.So, the objective of the present work is, to design a hardware system consisting of a brushless DC motor fan whose speed is controlled based on the temperature of the chip, sensed by the sensor LM35.The LM35 series are precision integrated-circuit temperature sensors, whose output voltage is linearly proportional to the Celsius (Centigrade) temperature. The LM35 thus has an advantage over linear temperature sensors calibrated in Kelvin, as the user is not required to subtract a large constant voltage from its output to obtainconvenient Centigrade scaling. The LM35 does not require anyexternal calibration or trimming to provide typical accuracies of ±1⁄4°C at room temperature and ±3⁄4°C over a full −55 to +150°C temperature range. Low cost is assured by trimming and calibration at the wafer level. The LM35’s low output impedance, linear output, and precise inherent calibration make interfacing to readout or control circuitry especially easy. It can be used with single power supplies, or with plus and minus supplies. As it draws only 60 μA from its supply, it h as very low selfheating, less than 0.1°C in still air. The LM35 is rated to operate over a −55° to +150°C temperature range, while the LM35C is rated for a −40° to +110°C range (−10° with improved accuracy). The LM35 series is available packaged in hermetic TO-46 transistor packages, while the LM35C, LM35CA, and LM35D are also available in the plastic TO-92 transistor package. The LM35D is also available in an 8-lead surface mount small outline package and a plastic TO-220 package. To monitor the voltage at the terminals of the DC motor fan, the PWM signal is generated by the ARM7TDMI processor. This PWM signal is changed in accordance to the output of the LM35temperature sensor. So the important component of this entire project is the temperature sensor.2. DescriptionIn ARM processor based automatic temperature control system, the output of the temperature sensor is fed to the on chip ADC and the output of the ADC is given to the L293D driver IC which in turn is fed to DC motor fan as shown in the block diagram in Fig. 1. A graphic LCD (128x64 pixels) is interfacedto the ARM LPC 2378 processor to display the temperature of the IC and the speed of the fan. A buzzer is also connected to the processor which gives an indication, in case of the failure of the fan or overheating of the chip beyond some level. The entire circuit diagram is shown in Fig. 2.Fig. 1.Block diagram.Fig. 2. Circuit Diagram.3. Software DescriptionThe present work is implemented using ARM IAR Workbench IDE and the necessary embedded C program is developed and dumped into the embedded processor using Flash magic ISP Utility. The ARM IAR Workbench IDE is a very powerful Integrated Development Environment (IDE) that allows you to develop and manage complete embedded application projects. In-System Programming is programming or reprogramming the on-chip flash memory, using the boot-loader software and a serial port. The LPC2387 microcontroller is based on a 16-bit/32-bit ARM7TDMI-S CPU with real-time emulation that combines the microcontroller with 512 kB of embedded high-speed flash memory.A 128-bit wide memory interface and unique accelerator architecture enable 32-bit code execution at the maximum clock rate. For critical performance in interrupt service routines and DSP algorithms, this increases performance up to 30 % over Thumb mode. For critical code size applications, the alternative 16-bit Thumb mode reduces code by more than 30 % with minimal performance penalty.The LPC2387 is ideal for multi-purpose serial communication applications. It incorporates a 10/100 Ethernet Media Access Controller (MAC), USB full speed device with 4 kB of endpoint RAM,four UARTs, two CAN channels, an SPI interface, two Synchronous Serial Ports (SSP), threeI2C interfaces, and an I2S interface. This blend of serial communications interfaces combined with an on-chip 4 MHz internal oscillator, 64 kB SRAM, 16 kB SRAM for Ethernet, 16 kB SRAM for USB and general purpose use, together with 2 kB battery powered SRAM makes this device very well suited for communication gateways and protocol converters. Various 32-bit timers, an improved 10-bit ADC, 10-bit DAC, one PWM unit, a CAN control unit, and up to 70 fast GPIO lines with up to 12 edge or level sensitive external interrupt pins make this microcontroller particularly suitable for industrial control and medical systems.The LPC2378 Microcontroller provides on-chip boot-loader software that allows programming of the internal flash memory over the serial channel. Philips provides a utility program for In-System programming called Flash magic Software.4. Results and ConclusionsEmbedded ARM processor based automatic speed control DC motor fan is designed and implemented.To test the validity of the design, the temperature sensor is kept inside a small oven and its temperature is increased beyond the room temperature. Now the fan is operated to run with full speed and the temperature is found to comeback to normal temperature. This is repeated with various VLSI chips like Pentium processor, FPGA chips etc. Now the temperature sensor is kept very near to the Pentium processor of the computer and it is observed that, as the time lapses the speed of the fan is automatically increased and the temperature of the chip is found to be controlled. These results are displayed on LCD panel. Though the present system is working well in the given environment, still it is worthwhile to highlight the following conclusions.Normally, controlling fan speed or clock throttling based on temperature requires that the temperature of the high speed chip should be first measured. This is done by placing a temperature sensor close to the target chip either directly next to it or in some cases, under it or on the heat sink. The temperature measured in this way corresponds to that of the high speed chip, but can be significantly lower and the difference between measured temperature and the actual die temperature increases as the power dissipation increases. So, the temperature of the circuit board or heat sink must be correlated to the die temperature of the high speed chip. Of course a better alternative is possible with a number of high speed chips. Many CPUs, FPGAs and other high speed ICs include a thermal diode which is actually a diode connected bipolar transistor, on the die. Using a remote diode temperature sensor connected to this thermal diode, the temperature of the high speed IC’s die can be measured directly with an excellent accuracy. This not only eliminates the large temperature gradients involved in measuring temperature outside the target IC’s package, but it also eliminates the long thermal time constants,from several seconds to minutes, that cause delays in responding to die temperature changes.There is also a drawback in fan speed control. Normally the fan speed iscontrolled by adjusting the power supply voltage of the fan. This is done by a low-frequency PWM signal, usually in the range of about 50 Hz, whose duty cycle is varied to adjust the fan’s speed. This is inexpensive and also efficient. But the disadvantage of this method is that it makes the fan somewhat nosier because of the pulsed nature of the power supply. The PWM waveforms fast edges cause the fans mechanical structure to move, which is easily audible.In some systems, it is also important to limit the rate of change of the fan speed. This is critical when the system is in close proximity to users. Simply switching a fan on and off or changing speed immediately as temperature changes is acceptable in some environments. But when users are in nearby, the sudden changes in fans noise are highly annoying. So to avoid these effects the fan’s drive signal must be limited to an acceptable level.5. Future Scope of the WorkIn the present work temperature is sensed using the temperature sensor LM35 and the speed of the motor is controlled by varying the width of PWM generated by the processor. But the temperature sensed by the IC LM35 is not very accurate even though we keep the IC very near to the processor orVLSI chip. So, we can use a remote diode temperature sensor connected to the thermal diode which measures the temperature of the high speed ICs directly with excellent accuracy.Another important aspect is a variety of remote temperature sensors with up to five sensing channels is available that can detect the die temperature of the high speed chip and transmit temperature data to a microcontroller.Fan speed regulators with multiple channels of fan tachometer monitoring can provide reliable control of fan RPM or supply voltage based on commands from an external microcontroller.For this simple ICs are provided by MAXIM MAX6660 and MAX6653. The first IC can sense the remote temperature and controls the fan speed based on that temperature. It produces a DC supply voltage for the fan through an internal power transistor. The second IC also performs a similar function but drives the fan with a PWM waveform through an external pass transistor. Both include complete thermalfault monitoring with over temperature outputs, which can be used to shut down the system if the high speed chips get too hot. So, the present work can be improved further by using the above mentioned techniques.基于嵌入式处理器的VLSI芯片的温度自动控制摘要本文介绍了基于嵌入式处理器的VLSI芯片的温度自动控制，同时利用温度传感器LM35和ARM处理器LPC2378来完成设计。
介绍电子工程的英语作文
介绍电子工程的英语作文Title: Introduction to Electronic Engineering。
Electronic engineering is a dynamic and rapidly evolving field that plays a crucial role in shaping the modern world. It encompasses the study, design, and application of electronic devices, circuits, and systems, enabling the development of technologies that power everything from smartphones to spacecraft. In this essay, we will delve into the fundamentals of electronic engineering, exploring its key principles, applications, and future prospects.### Fundamentals of Electronic Engineering。
At its core, electronic engineering deals with the manipulation of electrical currents to perform various tasks. This involves understanding the behavior of electrons within different materials and designing circuits that can control their movement. Key concepts in electronicengineering include:1. Circuit Theory: This branch of electronic engineering focuses on analyzing and designing electrical circuits comprising components such as resistors, capacitors, inductors, and semiconductor devices like diodes and transistors. Circuit theory forms the foundation upon which more complex electronic systems are built.2. Analog and Digital Electronics: Electronic systems can be broadly categorized into analog and digital domains. Analog electronics deals with continuous signals, while digital electronics processes discrete signals represented as binary digits (bits). Both domains have their unique challenges and applications.3. Signal Processing: Signal processing involves manipulating analog or digital signals to extract information or enhance specific characteristics. It plays a vital role in various applications, including telecommunications, audio processing, and medical imaging.4. Microelectronics: Microelectronics focuses on the design and fabrication of integrated circuits (ICs) containing thousands to billions of electronic components on a single chip. This field drives advancements in computing, telecommunications, and consumer electronics.### Applications of Electronic Engineering。
微电子专业英语
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register移位寄存器inverter反相器order of magnitude数量级isolation绝缘；隔离isolation diffusion隔离扩散result in造成warpage热变形；扭曲IC(integrated circuits)集成电路obsolete废弃的，过时的RTL(resistor transistor logic)电阻晶体管逻辑（电路）DTL（diode transistor logic）二极管晶体管逻辑（电路）unilaterally单方地IRE（Institute of Radio Engineers）无线电工程师学会NAND gate与非门discrete分立的discrete component分立元件the crowd大众Revenue收入hide躲藏；隐瞒reliability可靠性vibration振动；颤动vibration test振动测试explosive爆炸的trigger触发；发射capacity容量estimate估计climb on the bandwagon赶时髦cycle time周期overall从头到尾；总的inertial guidance惯性制导flight control飞行控制ground地Texas Instruments德克萨斯（德州）仪器RCA美国无线电公司General Electric通用电气公司Autonetics自动控制学qualification资格；限制；执照shift register latch移位寄存器锁存电路isolation barrier隔离势垒isolation region隔离区isolation masking隔离掩蔽isolation leakage隔离漏流discrete IC分立集成电路revenue bond收益债券revenue tax财政关税hidden field隐式字段reliability statistics可靠性统计vibration noise振动干扰inertial mass惯性质量ground base共基极接地qualification test合格性试验ground circuit接地电路qualification time鉴定时间qualification phase限定相位mulish执拗的unyielding不易弯曲的obstinate顽固的persistent坚持不懈的Utah犹他州Salt Lake City盐湖城solid state固态responsibility责任priority优先权field effect场效应FET场效应晶体管originate from源于doctorate博士学位flip-flop触发器amplifier放大器gate栅oxide氧化物aluminum铝deposit放置，淀积vaccum真空oxidation氧化threshold voltage阈值电压drain漏fabrication制造instability不稳定性pinch-off夹断pinch-off voltage夹断电压alloy合金standby备用的power density功率密度triode三级真空管circuitry电路packing density存储密度patent专利complementary互补的persistent registration持久性定位solid unit固态器件gate region栅区gate oxide thickeness栅氧化层厚度vacuum tube真空管oxidation film氧化膜oxidation mask氧化掩膜threshold control阈值控制alloying reaction熔合反应Standby Power Supply备用电源general perpose通用的operational amplifier运算放大器industry standards工业标准plug-in插入式的overload protection过载保护freedom from没有identical to和··完全不同operational control unit运算控制单元plug and play即插即用latch mode锁存模式overload circuit breaker过载断路器identical operation恒等运算Schottky-clamped肖特基箝位memory-decoding存储译码data routing数据选择propagation delay time传播延迟时间access time存取时间negligible可忽略不计的demultiplexing多路输出选择Schottky Clamped Transistor肖特基箝位晶体管Schottky Barrier肖特基势垒Access Register存取寄存器Power功耗channel通道serial串行ADC模数转换器data-acquisition数据采集Multiplexer多路复用器bandwidth带宽track/hold采样/保持interface接口Ultra极端的single +5V supply +5V单电源analog input模拟输入single-ended单端Differential差分的unipolar/bipolar单极的/双极的TM(trade mark)商标strobe选通Family系列digital signal processor数字信号处理器successive逐次的approximation 逼近的reference基准drift漂移ppm（parts per million）百万分之几buffer缓冲Amplifier放大器gain增益trim微调LSB（least significant bit）最低有效位pin引脚Quantization error量化误差power-down断电power up加电shut down关闭sampling rate抽样率DIP（dual in-line package）双列直插式封装SO package（small outline package）小外形SOP SSOP（shrink-small-outline package）缩小型SOP anti-aliasing filter抗混叠滤波器data sheet数据表capacitor电容float悬空Falling edge下降沿impedance阻抗clock period时钟周期rising edge上升沿Duty cycle占空比circuitry电路flexible可变的microprocessor微处理器block diagram 框图pseudo伪的differential input差分输入comparator比较器equivalent相等的With respect to关于span跨越cycle周期restore恢复binary-weighted capacitor二进制加权电容General Input总输入General Register通用寄存器Analog to Digital Converter模数转换Multiplexer circuit多路转换电路Ultra Large Scale IC超大规模集成电路differential amplifier差动放大器unipolar transistor单极晶体管bipolar COMS双极型互补金属氧化物半导体Digital Clock Pulse数字时钟脉冲Reference Voltage参考电压Gain margin增益裕度quantization noise量化噪声SOJ J型引脚小外形封装TSOP薄小外形封装VSOP甚小外形封装TSSOP薄的缩小型SOP SOT小外形晶体管SOIC小外形集成电路impedance mismatch阻抗失配flexible printed circuit柔性印制电路Ion implantation离子注入molecule分子electric field电场target靶子；目标A wide variety of各种各样的dose剂量substrate基板；衬底crystal structure晶体结构Incidence发生phosphorus磷dope掺杂homogeneity同质性reproducibility可重复性profile剖面concentration浓度relatively比较而言nitride氮化物penetration刺穿；渗透penetration depth穿透深度gradient梯度sequence序列optimization最佳化dopant掺杂property性质restricted to限于domain领域shallow浅的theoretical理论上trajectory轨道distribute分配collision碰撞randomly随机的impact冲击力arsenic砷的crystalline silicon单晶硅dominant支配channel effect沟道效应tail尾巴tendency趋势saturate浸透，饱和conventional通常的tilt倾斜simulation仿真thermal vibration热振动interaction相互作用ion absorption离子吸收ion beam etching离子束蚀刻ion laser离子激光dose of medicine药剂量substrate interconnection衬底互连incidence zone入射区optimization cost优化成本dopant diffusion掺杂剂扩散domain name域名shallow binding浅结合distributed capacitance分布电容collision channel冲突通道randomly distributed data随机分布数据impact strength冲击强度impact response击打响应channeling diode沟道二极管conventional model传统模型thermal conduction热传导Simulation Analysis and Modeling模拟分布与模型化thermal agitation noise热噪声Thermal oxidation热氧化elevate提升angstroms埃inclination低下来ambient环境Room temperature室温oxidation furnace氧化炉diffusion furnace扩散炉cabinet机壳Fuse熔断quartz石英tube管undergo经受；承担heating coil加热线圈Glassware玻璃制品paddles短桨oxidizing agent氧化剂dry oxidation干法氧化Wet oxidation湿法氧化silicon硅silicon dioxide二氧化硅relative density相对密度Parabolic抛物线hamper妨碍empirically经验地halogen卤素flux变化Ambient condition环境条件ambient noise环境噪音ambient temperature环境温度Quartz crystal石英晶体quartz oscillator石英振荡器undergo change历经变化Quartz Crystal Frequencey Oscillator石英晶体频率振荡器undergo examination受到审讯Undergo experience经历undergo surgery接受手术undergo punishment遭受处罚Heating and ventilation供暖和通风heating effect热效应heating time加热时间Silicon chip硅片silicon dioxide layer二氧化硅层relative accuracy相对精度Relative divergence相对偏差relative magnitude相对值parabolic antenna抛物线天线Flux coating焊剂涂敷flux counter磁通计数器flux leakage漏磁Assemble装配packaging封装manufacture制造transform改变semiconductor半导体functional product功能产品end user终端用户electrical connection电连接Transmission传送thermal dissipation热损reliability可靠性innovation革新Architecture 建筑system integration系统集成expansion膨胀wireless无线的Bio-chips生物芯片optoelectronics光电子学scale等级gap间隙diversification多样化MEMS：Micro Electro Mechanical System微电子机械系统slack松弛mechanism混合SIP(system-in-package)系统芯片functional density功能密度printable可印刷的Embedded devices嵌入式器件emerging新兴的regulatory管理的assemble cell装配单元packaging technique组装技术transforming principle转化要素semiconductor junction半导体结transmission band传输频带expansion connector扩展接口System Application 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breakdown电介质击穿dielectric constant介电常数dielectric isolation电介质隔离法。
微电子专业英语,文库
sides, χn=χp, Egn=Egp, and γn=γp. This implies that the bottom of the conduction band is (for neutrality) at the same energy for both materials, and ECn=ECp. Similarly Egn=Egp and EVn=EVp. Since electron affinities and ionization potentials are constant, EC and EV at the material edges are secondary references. However, because the doping is different in the two materials, the positions of the Fermi
• 热平衡状态下的能带图 由于没有净电流通过pn结，
所以Jn=Jp=0，而且费米能级相等。内建电场ξ被称作过 渡区（？空间电荷区？）。在空间度梯度引起的扩 散电流。同理，对于空穴的漂移电流和扩散电流，情况完 全类似。结中的内建电场改变了能带。因为我们参考的是 真空能级，所以这一观点维持不变。
•
电子亲和力χ，电离势γ，能量差Eg表示各种材料的 特性。下标n表示n型半导体，下标p表示p型半导体。另 外还显示了一个参数，也就是功函数Φ。功函数等于真 空能级和费米能级的能量差。 Φ=Evac-Ef.
Upon contact between the two materials, because there are more quasi-free electrons on the n side than on the p side, electrons flow (diffuse) from the n-type semiconductor to the p-type semiconductor. As the electrons move toward file ptype region, they leave behind ionized donors (charged positively) that are locked into the crystal lattice. At the same time, holes flow from the p semiconductor to the n semiconductor, leaving behind negatively charged acceptors. This separation of charges sets up an electric field, as shown in Fig.3.3.
微电子专业英语翻译(部分)
微电子专业英语部分翻译段落参考参考教材，不通顺之处自己整理第一章1页1.1.1 Solid-state…固态材料可分为三种：绝缘体、半导体和导体。
图1-1给出了在三种材料中一些重要材料相关的电阻值（相应电导率）。
绝缘体如熔融石英和玻璃具有很低电导率，在10^-18到10^-8S/cm之间。
导体如铝和银有高的电导率，典型值从104到106S/cm;而半导体具有的电导率介乎于两者之间。
半导体的电导率一般对温度、光照、磁场和小的杂志原子非常敏感。
在电导率上的敏感变化使得半导体材料称为在电学应用上为最重要的材料。
3页1.1.2 The semiconductor…我们研究的半导体材料是单晶，也就是说，原子是按照三维周期形式排列。
在晶体中原子的周期排列称为晶格。
在晶体里，一个原子从不远离它确定位置。
与原子相关的热运动也是围绕在其位置附近。
对于给定的半导体，存在代表整个晶格的晶胞，通过在晶体中重复晶胞组成晶格。
6页1.1.3 As discussed…如1.1.2节所述，在金刚石结构的每个原子被4个相邻原子所包围。
每个原子在外轨道具有4个电子，并且每个电子与相邻原子共享价电子；每对电子组成一个共价键。
共价键存在于同种原子之间或具有相同外层电子结构的不同元素的原子间。
每个电子与每个原子核达到平衡需要相同时间。
然而，所有电子需要很多时间在两个原子核间达到平衡。
两个原子核对电子的吸引力保证两个原子在一起。
对于闪锌矿机构如砷化镓主要的价键引力主要来自于共价键。
当然，砷化镓也具有小的离子键引力即Ga+离子与四周As-离子，或As离子和四周Ga+离子。
7页1.1.4 The detailed…结晶固体的详细能带结构能够用量子理论计算而得。
图1-3是孤立硅原子的金刚石结构晶体形成的原理图。
每个孤立原子有不连续能带（在右图给出的两个能级）。
如原子间隔的减少，每个简并能级将分裂产生带。
在空间更多减少将导致能带从不连续能级到失去其特性并合并起来，产生一个简单的带。
微电子专业专业英语翻译
Practical Applications of Semiconductor Reliability ModelingLori E. Bechtold, Boeing Commercial AirplanesFlorian Molière, PhD, Airbus Group InnovationsDavid A. Sunderland, PhD, Boeing Space & Intelligence SystemsBahig Tawfellos, Honeywell AerospaceKey Words: Physics-of-Failure, Predictions, Semiconductor ReliabilitySUMMARY & CO CLUSIO SA practical methodology for modeling the reliability of deep submicron (<90 nm) semiconductor microcircuits provides timely and needed information for the integration of commercial off the shelf (COTS) electronics in airborne and high reliability applications.（1）Designing and assuring customer confidence in airborne high reliability applications becomes more challenging as electronics technologies develop rapidly and commercial application demands drive the increasing use of faster, more integrated, higher density commercial off the shelf (COTS) electronics. （2）Use of COTS electronics provides advantages of greater computational power, with higher manufacturing volumes driving better quality control. COTS also introduce the new problem of life-limited semiconductors [1]. Outdated adequately support reliable aerospace system design [2].The Semiconductor Reliability project, that launched in April 2013 by the Aerospace Vehicle Systems Institute (A VSI) under the Authority for Expenditure (AFE) 83, （3）developed a practical approach to modeling the random and wearout failure mechanisms of deep sub-micron (<90nm) microcircuits. Unlike prior physics of failure approaches, the methodology was kept simple and was implemented in a spreadsheet. （4）This spreadsheet is provided free of charge to R&M practitioners to help promote understanding and common usage of the methodology. （5）Recipients of the spreadsheet are expected to provide feedback to the A VSI team in return. The project also encourages microcircuit device suppliers to provide reliability information in some form, （6）either by using the spreadsheet or directly providing the cumulative defect fraction (CDF) of their product in theapplication environments.When microcircuit device suppliers provide test data results for their products, the spreadsheet is used to scale the results from test to usage environments.（7）The methodology developed by A VSI differs from traditional Arrhenius methods in that scaling is not only based on temperature but also on voltage, current and frequency. （8）Models of time dependent dielectric breakdown (TDDB), hot carrier injection (HCI), negative bias temperature instability (NBTI) and electromigration (EM) are used to gain an accurate reliability assessment for technologies sensitive to these mechanisms.（9）This paper describes the A VSI reliability research project,the semiconductor microcircuit reliability models, andcommercial and provides examples of the application of these models to support reliable avionics systems design.I TRODUCTIO（10）COTS microcircuit wearout has become a major concern for both military/aerospace (mil/aero) integrators and avionics equipment manufacturer companies (OEMs) . （11）By contrast with packaging reliability issues, microcircuit wearoutelectronics degradations cannot be easily addressed and revealed by means of the typical qualification tests performed on equipment. （12）This is because equipment qualification tests mainly accelerate environmental tresses (thermal cycle vibration, moisture) without the necessary functional constraints required to bring to light the life limited semiconductor issues. In this sense, wearout concerns have to be addressed in an early design phase at the sub-assembly level (Figure 1) through component selection methodologies like the one proposed in this paper.（13）Designing for high reliability applications is a challenge that requires multi-level collaboration to assure vertical integration of the requirements and information flow necessary for design. （14）Figure 2 illustrates the flow of information between members of the supply chain, showing generally the downward flow of requirements and upward flow of analysis and test data needed to design systems to meet the requirements.（15）Mil/aero integrators design aircraft and other platforms for commercial and military applications. （16）All companies in this market segment face the common need to use the best available COTS electronics in high reliability applications. （17）Airborne high reliability mil/aero applications generally experience greater environmental stresses than ground based commercial applications. （18）They drive reliability requirements in the context of thermal profiles, thermal cycling and vibration environments down to their suppliers, the avionics OEMs.（19）Avionics OEMs must find architecture solutions and trade multiple and often conflicting requirements.The avionics OEMs procure electronics devices from the microcircuit device suppliers and must understand how the device will operate in the required environments. （20）Mitigation measures at the avionics OEM level include adequately derating the device in the context of thermal profiles, thermal cycling, vibration, voltage and frequency, and assuring adequate architecture redundancy to guarantee reliability and safety requirements are met throughout the unit life.The microcircuit device suppliers must provide avionics OEMs with enough information and substantiating data so the OEM can make good design decisions while using their devices in electronics modules. The avionics OEM must provide the mil/aero integrators with enough information and substantiating data for them to use the modules in an airborne platform that meets their customer requirements for high functionality, safety and reliability over the operational lifetimes of the equipment.（21）The AFE 83 project aims to break down communication barriers betweenthese market segments to improve practical semiconductor reliability assessments. （22）AFE 83 is working in collaboration with 与...合作microcircuit device suppliers to develop a practicable methodology for predicting the reliability of integrated circuit semiconductors for high reliability applications. It is developing a simple reliability prediction methodology for random failure rate and the time to intrinsic.（23）The random failure rate portion of the model is similar to MIL-HDBK-217 models [3], because it is scaled with device complexity复杂性and use conditions. （24）The physics of failure semiconductor wearout models developed in prior A VSI projects [4] are used as a starting point and will be modified based on the inputs from semiconductor suppliers.2 A VSIA VSI is a research cooperative that addresses issues impacting the aerospace community through international collaborative research conducted by industry, government and academia.（25）（翻译）Members combine their resources and talents to organize and conduct research projects directly benefiting the member organizations and often benefiting the aerospace industry as a whole.（26）A VSI provides a voice for their membership to jointly influence standards, processes and technologies related to aerospace industry.A VSI has invested over a decade of research into electronics reliability, including deep sub-micron (<130nm) semiconductor wearout mechanisms, atmospheric radiation effects and the integration of physics of failure methods into reliability predictions. In 2010, A VSI reliability roadmap project, AFE 74, engaged a broad community of reliability subject matter experts to develop a consensus based Reliability Prediction Technology Roadmap. The Roadmap identified many gaps in reliability prediction capability to support the application needs identified by the stakeholders.（27）The stakeholders require a methodology that results in timely,accurate and necessary information to support design engineering processes that build customer confidence in product reliability. Semiconductor reliability modeling was identified as a high priority by the roadmap project[5].3 APPLICATIO SAerospace applications often require a 20-30 year service life, while COTS electronics usually are designed for shorter market cycles. while COTS electronics usually are designed for high performance and low cost, consequently long termreliability is less of a concern. This leaves less incentive for COTS suppliers to address the need for extended life by applying mitigation measures for these failure mechanisms. If “design for reliability”measures have been applied within the microcircuit, these may be proprietary or not fully understood by the user, so will not figure in the user’s reliability modeling. By focusing at the part level, the AFE 83 spreadsheet allows these mitigation measures to be included by the supplierAvionics systems are designed to rigorous high standards of safety and reliability, with growing processing demands of advanced navigation, guidance and communication systems. High functional density and high speed processing to support the growing avionics systems requirements is enabled through the use of COTS electronics with deep sub-micron (<90 nm) integrated circuit (IC) technologies.Airborne environments are generally harsher than ground based applications. Each flight cycle induces vibration combined with a thermal cycle in many electronics, especially those in partially protected areas such as the electronics bay.（28）Flight environments are harsh on electronics and electronic packaging, due to extremes of temperature, frequent thermal cycling, moisture, vibration, pressure, and atmospheric radiation. （29）In aviation applications, reliability needs can be higher as application conditions become worse.The effect of temperature on reliability may be seen in Fig.3. （30）This chart, provided by Xilinx, is an example of one type of result that could come out of the spreadsheet. Here Xilinx has used an internal tool, described in [6], to compute time to an acceptable percent failure for each of three distinct intrinsic wearout failure mechanisms, as well as the net lifetime value considering all three. They then plotted the result versus use temperature.（31）（翻译）.The AFE 83 spreadsheet similarly can provide the user with calculations of reliability at multiple temperatures, which can be convolved with the application’s temperature vs. time profile (e.g., Fig. 4 for commercial avionics) to enable mission analysis or decisions on whether to provide a more protected environment for the electronics. [7]（32）The results of such reliability calculations are intended to provide reasonable inputs to estimates of system-level reliability. （33）Aggregated, part-level reliability parametric data can be used to compute a reliability estimate at the circuit board, line replaceable unit, or subsystem level. This is based on the system designer’s understanding of the intended operation of the system and the environment in which it is intended to operate.While the proposed methodology is more involved than traditional reliability estimation methods, it may not be necessary to analyze every device in a given unit. （34）For many,conservative estimates will be adequate to meet random failure rate targets, and combination of older technology and limited stress will suggest that wearout life is adequate. The practical understanding of the inner relationship between the effects of the wearout failure mechanisms within a part may be controversial. The source of controversy is whether such effects can be treated as competing effects or if it is more accurate to model them as enhancing each other. （35）Asimplifying assumption in the spreadsheet is that the mechanisms are independent, and that the cumulative failure fractions may be combined numerically without correcting for an interaction between them.Figure 5 shows a sample flow diagram of the decision process an equipment manufacturer may use to determine the application of these analyses or equivalent. （36）It is important to note that if a component is expected to experience early wearout it must have the dominant wearout mechanisms accounted for in a prediction or the results will be misleading.（37）Figure 6 shows another approach to system level analysis where the traditional random failure reliability prediction (Mean Time Between Failures) is normalized to a Mean Life,so that it can be compared with the Geometric Mean Life the wearout of each small geometry part over the usage profile.[8] The Avionics OEM can then understand whether the small geometry part will be a key driver in their ability to meet the MTBF requirement.EM, TDDB, HCI and NBTI have been identified as dominant failure mechanisms for complementary metal-oxide semiconductors (CMOS) [9]. Models for these mechanisms were developed by various researchers and studied during the A VSI projects AFE 17, 71 and 71s1 and validated [10]. They have also been presented in detail in a previous RAMS paper [11], and are summarized here.The AFE 83 spreadsheet offers models for all four mechanisms, based on equations (1)-(4).T2 is the test temperature in K.These equations differ in some ways from traditional forms [12] to make the independent variables those directly controllable by the IC user, (e.g. for EM we use voltage as a proxy for current density.) （38）In addition, alternate forms of voltage acceleration models are provided in the spreadsheet,for different technologies.The failure mechanism AF models for TDDB, EM, HCI and NBTI provide an assessment at the feature level within the logic circuitry of an IC. The effects of these mechanisms become more pronounced as feature sizes shrink and functional density increases. （39）A recent study of field failures of communications technology semiconductors found that failures due to these effects are increasing, in a way similar to Moore’s Law [13] [14]. （40）Models have been developed for NBTI; however as semiconductor feature sizes continue to reduce Positive Bias Temperature Instability (PBTI) may become an issue and models will need to be developed.A traditional approach is to use the Arrhenius model to scale test data to usageenvironments using empirically derived activation energy factors. （41）It does not consider the relying on a generalized temperaturewere developed by various researchers and studied during the related failure rate model. [15] The models provided in the spreadsheet offer a more detailed failure characterization, the ability to consider multiple failure mechanisms and to directly model voltage and frequency effects as well as thermal effects.5 RELIABILITY PREDICTIO OF SEMICO DUCTORSIn any practical reliability analysis the best data available is used, and this is also true for use of the AFE 83 spreadsheet.Due to budget and time constraints and possibly the limited availability of COTS vendor data, analyses are sometimes performed with less than ideal data precision. The ideal strategy is to seek the best data first then fall back on other sources. The following is the prioritized order for finding data and analyzing semiconductor microcircuits:1. Ideal–Supplier provides all the necessary reliability in the usage environments and considering operational stresses2. Second best –Supplier provides some test information, and the user adjusts it to usage conditions using AFE 83 spreadsheet3. Third best –If no test data is available, the user runsIn (1)-(4), their own set of tests and uses AFE 83 spreadsheet to are the acceleration perform prediction4.Fourth option –When no information is available, a factors for T DDB, EM, HCI and NBTI, respectively, prediction can be performed using AFE 83 spreadsheet defaults .The AFE 83 spreadsheet PoF models are used to start the conversation with semiconductor supplier companies about what is needed for the analysis. A potential approach is to have semiconductor manufacturers take the spreadsheet develop it to accurately model their particular product line, and provide it on a webpage for use by reliability engineers applying their product in an electronic system.The prototype spreadsheet has assumed numerical values in places where the device-specific parameters are unknown.The spreadsheet is a starting point and not the final solution is used as a basis for how semiconductors are modeled.Participants and partners in this project will need to describe the methodology for estimating reliability with key objectives of identifying the data needed from device manufacturers and thatdefining the method for integrating the data into a usable result. This is accomplished through guidelines which are to be published as a deliverable of AFE83.The AFE 83 spreadsheet includes a wearout prediction model and assessment based on the four mechanisms from AFE 71s1. An initial slope factor 2 provides an example of how a Weibull analysis may characterize wearout. Although initial parametric model input values are offered in the spreadsheet, the actual parameters of the model will be provided by semiconductor suppliers, or used by them to perform wearout reliability assessment for their customers.一语言点（1）designing 和assuring 都是动词的ing形式作形容词来修饰customer。
中北大学微电子专业英语3综述
• 热平衡状态下的能带图 由于没有净电流通过pn结，
所以Jn=Jp=0，而且费米能级相等。内建电场ξ被称作过 渡区。在空间电荷区，电场产生电子的漂移电流，该漂移 电流用于补偿由于浓度梯度引起的扩散电流。同理，对于 空穴的漂移电流和扩散电流，情况完全类似。结中的内建 电场改变了能带。因为我们参考的是真空能级，所以这一 观点维持不变。
The electron affinity（亲和力） χ，the ionzation potential （潜能，潜力） γ, and the energy gap Eg are indicated for each material. The subscript n indicates n type semiconductor while the subscript p indicates p-type semiconductor. Also shown is an additional parameter, the work function Φ. The work function is equal to the energy difference between the vacuum level and the Fermi level, Φ=Evac-Ef.
•
电子亲和力χ，电离势γ，能量差Eg表示各种材料的 特性。下标n表示n型半导体，下标p表示p型半导体。另 外还显示了一个参数，也就是功函数Φ。功函数等于真 空能级和费米能级的能量差。 Φ=Evac-Ef.
Upon contact between the two materials, because there are more quasi-free electrons on the n side than on the p side, electrons flow (diffuse) from the n-type semiconductor to the p-type semiconductor. As the electrons move toward file ptype region, they leave behind ionized donors (charged positively) that are locked into the crystal lattice. At the same time, holes flow from the p semiconductor to the n semiconductor, leaving behind negatively charged acceptors. This separation of charges sets up an electric field, as shown in Fig.3.3.
课程名称：微电子学专业英语
课程名称：微电子学专业英语课程编号：1203011课程学分：2.0适用专业：微电子学专业微电子学专业英语(English for Microelectronics)教学大纲一、课程性质与任务：《微电子学专业英语》是微电子学专业的专业选修课，适用于微电子学专业、综合班工学物理方向的本科生。
该课程在主修大学英语、半导体器件物理、半导体物理以及电子技术等课程基础之上，系统地介绍微电子学专业的基础知识。
通过本课程的学习，使同学掌握半导体物理，半导体器件物理，集成电路等方面的专业词汇，了解某些专业词汇的特殊含义和汉译方法，由浅入深地提高阅读原版专业文献的速度及理解能力．二、课程内容及要求：本课程要求学生掌握足够的专业词汇量，具有一定的对科技英语的双向翻译能力，并且能够依靠自身的专业背景知识阅读和翻译具有一定难度和深度的技术文献．Chapter 1Semiconductors Physics1.1 Energy Bands and Carrier Concentration：Semiconductor Materials, crystal Structure, Valence Bonds, Energy Bands, Density of States, Donors and Acceptors1.2 Carrier Transport Phenomena：Carrier Drift, Carrier Diffusion, Carrier Injection, Generation and Recombination Processes1.3 The PN Junction：Methods of Making Junctions, The Junction in Equilibrium, The Junction Under Reverse Bias and Forward Bias, Metal-Semiconductor Contacts. Heterojunction.重点：能带，输运现象，PN结难点：能带的形成，异质结。
广东海洋大学电子信息工程专业英语(电子技术简介)
Words and Expressions
Curriculum 课程 Passive component 无源器件 Resistor 电阻 Capacitor 电容 Inductor 电感 DC machine 直流电机 Three phase circuit三相电流 Transformer 变压器
Integrated circuit
•Assembling of electronic components on single mother board. •Connect resistors, capacitors and transistors on the same piece of wafer. Digital logic 数字逻辑 Small-scale circuit小型电路 Large-scale integration circuit大规模集成电路 Very large-scale integration 超大规模集成
Specific English
2. Characteristic
(3) real-time ---new fields; ---new technologies; ---new scientific and technical terms 如： -hypermedia( 超媒体) -virtual reality ( 虚拟现实)
The development of Electronics
•Electronics is a part of the larger field of electricity. •Electronics includes the electron tube, transistor, integrated circuit and so on. •Electronics began in 1883.
微电子专业英语
Abrupt junction 突变结 Accelerated testing 加速实验Acceptor 受主 Acceptor atom 受主原子Accumulation 积累、堆积 Accumulating contact 积累接触Accumulation region 积累区 Accumulation layer 积累层Active region 有源区 Active component 有源元Active device 有源器件 Activation 激活Activation energy 激活能 Active region 有源（放大）区Admittance 导纳 Allowed band 允带Alloy-junction device合金结器件 Aluminum(Aluminium) 铝Aluminum – oxide 铝氧化物 Aluminum passivation 铝钝化Ambipolar 双极的 Ambient temperature 环境温度Amorphous 无定形的，非晶体的 Amplifier 功放扩音器放大器Analogue(Analog) comparator 模拟比较器 Angstrom 埃Anneal 退火 Anisotropic 各向异性的Anode 阳极 Arsenic (AS) 砷Auger 俄歇 Auger process 俄歇过程Avalanche 雪崩 Avalanche breakdown 雪崩击穿Avalanche excitation雪崩激发Background carrier 本底载流子 Background doping 本底掺杂Backward 反向 Backward bias 反向偏置Ballasting resistor 整流电阻 Ball bond 球形键合Band 能带 Band gap 能带间隙Barrier 势垒 Barrier layer 势垒层Barrier width 势垒宽度 Base 基极Base contact 基区接触 Base stretching 基区扩展效应Base transit time 基区渡越时间 Base transport efficiency基区输运系数Base-width modulation基区宽度调制 Basis vector 基矢Bias 偏置 Bilateral switch 双向开关Binary code 二进制代码Binary compound semiconductor 二元化合物半导体Bipolar 双极性的 Bipolar Junction Transistor (BJT)双极晶体管Bloch 布洛赫 Blocking band 阻挡能带Blocking contact 阻挡接触 Body - centered 体心立方Body-centred cubic structure 体立心结构 Boltzmann 波尔兹曼Bond 键、键合 Bonding electron 价电子Bonding pad 键合点 Bootstrap circuit 自举电路Bootstrapped emitter follower 自举射极跟随器Boron 硼Borosilicate glass 硼硅玻璃 Boundary condition 边界条件Bound electron 束缚电子 Breadboard 模拟板、实验板Break down 击穿 Break over 转折Brillouin 布里渊 Brillouin zone 布里渊区Built-in 内建的 Build-in electric field 内建电场Bulk 体/体内 Bulk absorption 体吸收Bulk generation 体产生 Bulk recombination 体复合Burn - in 老化 Burn out 烧毁Buried channel 埋沟 Buried diffusion region 隐埋扩散区Can 外壳 Capacitance 电容Capture cross section 俘获截面 Capture carrier 俘获载流子Carrier 载流子、载波 Carry bit 进位位Carry-in bit 进位输入 Carry-out bit 进位输出Cascade 级联 Case 管壳Cathode 阴极 Center 中心Ceramic 陶瓷（的） Channel 沟道Channel breakdown 沟道击穿 Channel current 沟道电流Channel doping 沟道掺杂 Channel shortening 沟道缩短Channel width 沟道宽度 Characteristic impedance 特征阻抗Charge 电荷、充电 Charge-compensation effects 电荷补偿效应Charge conservation 电荷守恒 Charge neutrality condition 电中性条件Charge drive/exchange/sharing/transfer/storage 电荷驱动/交换/共享/转移/存储Chemmical etching 化学腐蚀法 Chemically-Polish 化学抛光Chemmically-Mechanically Polish (CMP) 化学机械抛光 Chip 芯片Chip yield 芯片成品率 Clamped 箝位Clamping diode 箝位二极管 Cleavage plane 解理面Clock rate 时钟频率 Clock generator 时钟发生器Clock flip-flop 时钟触发器 Close-packed structure 密堆积结构Close-loop gain 闭环增益 Collector 集电极Collision 碰撞 Compensated OP-AMP 补偿运放Common-base/collector/emitter connection 共基极/集电极/发射极连接Common-gate/drain/source connection 共栅/漏/源连接Common-mode gain 共模增益 Common-mode input 共模输入Common-mode rejection ratio (CMRR) 共模抑制比Compatibility 兼容性 Compensation 补偿Compensated impurities 补偿杂质 Compensated semiconductor 补偿半导体Complementary Darlington circuit 互补达林顿电路Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor(CMOS)互补金属氧化物半导体场效应晶体管Complementary error function 余误差函数Computer-aided design (CAD)/test(CAT)/manufacture(CAM) 计算机辅助设计/ 测试 /制造Compound Semiconductor 化合物半导体 Conductance 电导Conduction band (edge) 导带(底) Conduction level/state 导带态Conductor 导体 Conductivity 电导率Configuration 组态 Conlomb 库仑Conpled Configuration Devices 结构组态 Constants 物理常数Constant energy surface 等能面 Constant-source diffusion恒定源扩散Contact 接触 Contamination 治污Continuity equation 连续性方程 Contact hole 接触孔Contact potential 接触电势 Continuity condition 连续性条件Contra doping 反掺杂 Controlled 受控的Converter 转换器 Conveyer 传输器Copper interconnection system 铜互连系统Couping 耦合Covalent 共阶的 Crossover 跨交Critical 临界的 Crossunder 穿交Crucible坩埚 Crystal defect/face/orientation/lattice 晶体缺陷/晶面/晶向/晶格Current density 电流密度 Curvature 曲率Cut off 截止 Current drift/dirve/sharing 电流漂移/驱动/共享Current Sense 电流取样 Curvature 弯曲Custom integrated circuit 定制集成电路 Cylindrical 柱面的Czochralshicrystal 直立单晶Czochralski technique 切克劳斯基技术（Cz法直拉晶体J）Dangling bonds 悬挂键 Dark current 暗电流Dead time 空载时间 Debye length 德拜长度De.broglie 德布洛意 Decderate 减速Decibel (dB) 分贝 Decode 译码Deep acceptor level 深受主能级 Deep donor level 深施主能级Deep impurity level 深度杂质能级 Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 简并半导体 Degeneracy 简并度Degradation 退化 Degree Celsius(centigrade) /Kelvin 摄氏/开氏温度Delay 延迟 Density 密度Density of states 态密度 Depletion 耗尽Depletion approximation 耗尽近似 Depletion contact 耗尽接触Depletion depth 耗尽深度 Depletion effect 耗尽效应Depletion layer 耗尽层 Depletion MOS 耗尽MOS Depletion region 耗尽区 Deposited film 淀积薄膜Deposition process 淀积工艺 Design rules 设计规则Die 芯片（复数dice） Diode 二极管Dielectric 介电的 Dielectric isolation 介质隔离Difference-mode input 差模输入 Differential amplifier 差分放大器Differential capacitance 微分电容 Diffused junction 扩散结Diffusion 扩散 Diffusion coefficient 扩散系数Diffusion constant 扩散常数 Diffusivity 扩散率Diffusion capacitance/barrier/current/furnace 扩散电容/势垒/电流/炉Digital circuit 数字电路 Dipole domain 偶极畴Dipole layer 偶极层 Direct-coupling 直接耦合Direct-gap semiconductor 直接带隙半导体 Direct transition 直接跃迁Discharge 放电 Discrete component 分立元件Dissipation 耗散 Distribution 分布Distributed capacitance 分布电容 Distributed model 分布模型Displacement 位移 Dislocation 位错Domain 畴 Donor 施主Donor exhaustion 施主耗尽 Dopant 掺杂剂Doped semiconductor 掺杂半导体 Doping concentration 掺杂浓度Double-diffusive MOS(DMOS)双扩散MOS.Drift 漂移 Drift field 漂移电场Drift mobility 迁移率 Dry etching 干法腐蚀Dry/wet oxidation 干/湿法氧化 Dose 剂量Duty cycle 工作周期 Dual-in-line package （DIP）双列直插式封装Dynamics 动态 Dynamic characteristics 动态属性Dynamic impedance 动态阻抗Early effect 厄利效应 Early failure 早期失效Effective mass 有效质量 Einstein relation(ship) 爱因斯坦关系Electric Erase Programmable Read Only Memory(E2PROM) 一次性电可擦除只读存储器Electrode 电极 Electrominggratim 电迁移Electron affinity 电子亲和势 Electronic -grade 电子能Electron-beam photo-resist exposure 光致抗蚀剂的电子束曝光Electron gas 电子气 Electron-grade water 电子级纯水Electron trapping center 电子俘获中心 Electron Volt (eV) 电子伏Electrostatic 静电的 Element 元素/元件/配件Elemental semiconductor 元素半导体 Ellipse 椭圆Ellipsoid 椭球 Emitter 发射极Emitter-coupled logic 发射极耦合逻辑Emitter-coupled pair 发射极耦合对Emitter follower 射随器 Empty band 空带Emitter crowding effect 发射极集边（拥挤）效应Endurance test =life test 寿命测试 Energy state 能态Energy momentum diagram 能量-动量(E-K)图 Enhancement mode 增强型模式Enhancement MOS 增强性MOS Entefic (低)共溶的Environmental test 环境测试 Epitaxial 外延的Epitaxial layer 外延层 Epitaxial slice 外延片Expitaxy 外延 Equivalent curcuit 等效电路Equilibrium majority /minority carriers 平衡多数/少数载流子Erasable Programmable ROM (EPROM)可搽取（编程）存储器Error function complement 余误差函数Etch 刻蚀 Etchant 刻蚀剂Etching mask 抗蚀剂掩模 Excess carrier 过剩载流子Excitation energy 激发能 Excited state 激发态Exciton 激子 Extrapolation 外推法Extrinsic 非本征的 Extrinsic semiconductor 杂质半导体Face - centered 面心立方 Fall time 下降时间Fan-in 扇入 Fan-out 扇出Fast recovery 快恢复 Fast surface states 快界面态Feedback 反馈 Fermi level 费米能级Fermi-Dirac Distribution 费米-狄拉克分布 Femi potential 费米势Fick equation 菲克方程（扩散） Field effect transistor 场效应晶体管Field oxide 场氧化层 Filled band 满带Film 薄膜 Flash memory 闪烁存储器Flat band 平带 Flat pack 扁平封装Flicker noise 闪烁（变）噪声 Flip-flop toggle 触发器翻转Floating gate 浮栅 Fluoride etch 氟化氢刻蚀Forbidden band 禁带 Forward bias 正向偏置Forward blocking /conducting正向阻断/导通Frequency deviation noise频率漂移噪声Frequency response 频率响应 Function 函数Gain 增益 Gallium-Arsenide(GaAs) 砷化钾Gamy ray r 射线 Gate 门、栅、控制极Gate oxide 栅氧化层 Gauss（ian）高斯Gaussian distribution profile 高斯掺杂分布Generation-recombination 产生-复合Geometries 几何尺寸 Germanium(Ge) 锗Graded 缓变的 Graded (gradual) channel 缓变沟道Graded junction 缓变结 Grain 晶粒Gradient 梯度 Grown junction 生长结Guard ring 保护环 Gummel-Poom model 葛谋-潘模型Gunn - effect 狄氏效应Hardened device 辐射加固器件 Heat of formation 形成热Heat sink 散热器、热沉 Heavy/light hole band 重/轻空穴带Heavy saturation 重掺杂 Hell - effect 霍尔效应Heterojunction 异质结 Heterojunction structure 异质结结构Heterojunction Bipolar Transistor（HBT）异质结双极型晶体High field property 高场特性High-performance MOS.( H-MOS)高性能MOS. Hormalized 归一化Horizontal epitaxial reactor 卧式外延反应器 Hot carrior 热载流子Hybrid integration 混合集成Image - force 镜象力 Impact ionization 碰撞电离Impedance 阻抗 Imperfect structure 不完整结构Implantation dose 注入剂量 Implanted ion 注入离子Impurity 杂质 Impurity scattering 杂志散射Incremental resistance 电阻增量（微分电阻）In-contact mask 接触式掩模Indium tin oxide (ITO) 铟锡氧化物 Induced channel 感应沟道Infrared 红外的 Injection 注入Input offset voltage 输入失调电压 Insulator 绝缘体Insulated Gate FET(IGFET)绝缘栅FET Integrated injection logic集成注入逻辑Integration 集成、积分 Interconnection 互连Interconnection time delay 互连延时 Interdigitated structure 交互式结构Interface 界面 Interference 干涉International system of unions国际单位制 Internally scattering 谷间散射Interpolation 内插法 Intrinsic 本征的Intrinsic semiconductor 本征半导体 Inverse operation 反向工作Inversion 反型 Inverter 倒相器Ion 离子 Ion beam 离子束Ion etching 离子刻蚀 Ion implantation 离子注入Ionization 电离 Ionization energy 电离能Irradiation 辐照 Isolation land 隔离岛Isotropic 各向同性Junction FET(JFET) 结型场效应管 Junction isolation 结隔离Junction spacing 结间距 Junction side-wall 结侧壁Latch up 闭锁 Lateral 横向的Lattice 晶格 Layout 版图Lattice binding/cell/constant/defect/distortion 晶格结合力/晶胞/晶格/晶格常熟/晶格缺陷/晶格畸变Leakage current （泄）漏电流 Level shifting 电平移动Life time 寿命 linearity 线性度Linked bond 共价键 Liquid Nitrogen 液氮Liquid－phase epitaxial growth technique 液相外延生长技术Lithography 光刻 Light Emitting Diode(LED) 发光二极管Load line or Variable 负载线 Locating and Wiring 布局布线Longitudinal 纵向的 Logic swing 逻辑摆幅Lorentz 洛沦兹 Lumped model 集总模型Majority carrier 多数载流子 Mask 掩膜板，光刻板Mask level 掩模序号 Mask set 掩模组Mass - action law质量守恒定律 Master-slave D flip-flop主从D触发器Matching 匹配 Maxwell 麦克斯韦Mean free path 平均自由程 Meandered emitter junction梳状发射极结Mean time before failure (MTBF) 平均工作时间Megeto - resistance 磁阻 Mesa 台面MESFET-Metal Semiconductor金属半导体FETMetallization 金属化 Microelectronic technique 微电子技术Microelectronics 微电子学 Millen indices 密勒指数Minority carrier 少数载流子 Misfit 失配Mismatching 失配 Mobile ions 可动离子Mobility 迁移率 Module 模块Modulate 调制 Molecular crystal分子晶体Monolithic IC 单片IC MOSFET金属氧化物半导体场效应晶体管Mos. Transistor(MOST )MOS. 晶体管 Multiplication 倍增Modulator 调制 Multi-chip IC 多芯片ICMulti-chip module(MCM) 多芯片模块 Multiplication coefficient倍增因子Naked chip 未封装的芯片（裸片） Negative feedback 负反馈Negative resistance 负阻 Nesting 套刻Negative-temperature-coefficient 负温度系数 Noise margin 噪声容限Nonequilibrium 非平衡 Nonrolatile 非挥发（易失）性Normally off/on 常闭/开 Numerical analysis 数值分析Occupied band 满带 Officienay 功率Offset 偏移、失调 On standby 待命状态Ohmic contact 欧姆接触 Open circuit 开路Operating point 工作点 Operating bias 工作偏置Operational amplifier (OPAMP)运算放大器Optical photon =photon 光子 Optical quenching光猝灭Optical transition 光跃迁 Optical-coupled isolator光耦合隔离器Organic semiconductor有机半导体 Orientation 晶向、定向Outline 外形 Out-of-contact mask非接触式掩模Output characteristic 输出特性 Output voltage swing 输出电压摆幅Overcompensation 过补偿 Over-current protection 过流保护Over shoot 过冲 Over-voltage protection 过压保护Overlap 交迭 Overload 过载Oscillator 振荡器 Oxide 氧化物Oxidation 氧化 Oxide passivation 氧化层钝化Package 封装 Pad 压焊点Parameter 参数 Parasitic effect 寄生效应Parasitic oscillation 寄生振荡 Passination 钝化Passive component 无源元件 Passive device 无源器件Passive surface 钝化界面 Parasitic transistor 寄生晶体管Peak-point voltage 峰点电压 Peak voltage 峰值电压Permanent-storage circuit 永久存储电路 Period 周期Periodic table 周期表 Permeable - base 可渗透基区Phase-lock loop 锁相环 Phase drift 相移Phonon spectra 声子谱Photo conduction 光电导 Photo diode 光电二极管Photoelectric cell 光电池Photoelectric effect 光电效应Photoenic devices 光子器件 Photolithographic process 光刻工艺(photo) resist （光敏）抗腐蚀剂 Pin 管脚Pinch off 夹断 Pinning of Fermi level 费米能级的钉扎（效应）Planar process 平面工艺 Planar transistor 平面晶体管Plasma 等离子体 Plezoelectric effect 压电效应Poisson equation 泊松方程 Point contact 点接触Polarity 极性 Polycrystal 多晶Polymer semiconductor聚合物半导体 Poly-silicon 多晶硅Potential (电)势 Potential barrier 势垒Potential well 势阱 Power dissipation 功耗Power transistor 功率晶体管 Preamplifier 前置放大器Primary flat 主平面 Principal axes 主轴Print-circuit board(PCB) 印制电路板 Probability 几率Probe 探针 Process 工艺Propagation delay 传输延时 Pseudopotential method 膺势发Punch through 穿通 Pulse triggering/modulating 脉冲触发/调制PulseWiden Modulator(PWM) 脉冲宽度调制Punchthrough 穿通 Push-pull stage 推挽级Quality factor 品质因子 Quantization 量子化Quantum 量子 Quantum efficiency量子效应Quantum mechanics 量子力学 Quasi – Fermi－level准费米能级Quartz 石英Radiation conductivity 辐射电导率 Radiation damage 辐射损伤Radiation flux density 辐射通量密度 Radiation hardening 辐射加固Radiation protection 辐射保护 Radiative - recombination辐照复合Radioactive 放射性 Reach through 穿通Reactive sputtering source 反应溅射源 Read diode 里德二极管Recombination 复合 Recovery diode 恢复二极管Reciprocal lattice 倒核子 Recovery time 恢复时间Rectifier 整流器（管） Rectifying contact 整流接触Reference 基准点基准参考点 Refractive index 折射率Register 寄存器 Registration 对准Regulate 控制调整 Relaxation lifetime 驰豫时间Reliability 可靠性 Resonance 谐振Resistance 电阻 Resistor 电阻器Resistivity 电阻率 Regulator 稳压管（器）Relaxation 驰豫 Resonant frequency共射频率Response time 响应时间 Reverse 反向的Reverse bias 反向偏置Sampling circuit 取样电路 Sapphire 蓝宝石（Al2O3）Satellite valley 卫星谷 Saturated current range电流饱和区Saturation region 饱和区 Saturation 饱和的Scaled down 按比例缩小 Scattering 散射Schockley diode 肖克莱二极管 Schottky 肖特基Schottky barrier 肖特基势垒 Schottky contact 肖特基接触Schrodingen 薛定厄 Scribing grid 划片格Secondary flat 次平面Seed crystal 籽晶 Segregation 分凝Selectivity 选择性 Self aligned 自对准的Self diffusion 自扩散 Semiconductor 半导体Semiconductor-controlled rectifier 可控硅 Sendsitivity 灵敏度Serial 串行/串联 Series inductance 串联电感Settle time 建立时间 Sheet resistance 薄层电阻Shield 屏蔽 Short circuit 短路Shot noise 散粒噪声 Shunt 分流Sidewall capacitance 边墙电容 Signal 信号Silica glass 石英玻璃 Silicon 硅Silicon carbide 碳化硅 Silicon dioxide (SiO2) 二氧化硅Silicon Nitride(Si3N4) 氮化硅 Silicon On Insulator 绝缘硅Siliver whiskers 银须 Simple cubic 简立方Single crystal 单晶 Sink 沉Skin effect 趋肤效应 Snap time 急变时间Sneak path 潜行通路 Sulethreshold 亚阈的Solar battery/cell 太阳能电池 Solid circuit 固体电路Solid Solubility 固溶度 Sonband 子带Source 源极 Source follower 源随器Space charge 空间电荷 Specific heat(PT) 热Speed-power product 速度功耗乘积 Spherical 球面的Spin 自旋 Split 分裂Spontaneous emission 自发发射 Spreading resistance扩展电阻Sputter 溅射 Stacking fault 层错Static characteristic 静态特性 Stimulated emission 受激发射Stimulated recombination 受激复合 Storage time 存储时间Stress 应力 Straggle 偏差Sublimation 升华 Substrate 衬底Substitutional 替位式的 Superlattice 超晶格Supply 电源 Surface 表面Surge capacity 浪涌能力 Subscript 下标Switching time 开关时间 Switch 开关Tailing 扩展 Terminal 终端Tensor 张量 Tensorial 张量的Thermal activation 热激发 Thermal conductivity 热导率Thermal equilibrium 热平衡 Thermal Oxidation 热氧化Thermal resistance 热阻 Thermal sink 热沉Thermal velocity 热运动 Thermoelectricpovoer 温差电动势率Thick-film technique 厚膜技术 Thin-film hybrid IC薄膜混合集成电路Thin-Film Transistor(TFT) 薄膜晶体 Threshlod 阈值Thyistor 晶闸管 Transconductance 跨导Transfer characteristic 转移特性 Transfer electron 转移电子Transfer function 传输函数 Transient 瞬态的Transistor aging(stress) 晶体管老化 Transit time 渡越时间Transition 跃迁 Transition-metal silica 过度金属硅化物Transition probability 跃迁几率 Transition region 过渡区Transport 输运 Transverse 横向的Trap 陷阱 Trapping 俘获Trapped charge 陷阱电荷 Triangle generator 三角波发生器Triboelectricity 摩擦电 Trigger 触发Trim 调配调整 Triple diffusion 三重扩散Truth table 真值表 Tolerahce 容差Tunnel(ing) 隧道（穿） Tunnel current 隧道电流Turn over 转折 Turn - off time 关断时间Ultraviolet 紫外的 Unijunction 单结的Unipolar 单极的 Unit cell 原（元）胞Unity-gain frequency 单位增益频率 Unilateral-switch单向开关Vacancy 空位 Vacuum 真空Valence(value) band 价带 Value band edge 价带顶Valence bond 价键 Vapour phase 汽相Varactor 变容管 Varistor 变阻器Vibration 振动 Voltage 电压Wafer 晶片 Wave equation 波动方程Wave guide 波导 Wave number 波数Wave-particle duality 波粒二相性 Wear-out 烧毁Wire routing 布线 Work function 功函数Worst-case device 最坏情况器件Yield 成品率Zener breakdown 齐纳击穿Zone melting 区熔法。
电子科学技术专业英语(微电子方向)presentations
如图所示,当一个电源连接到半导 体,半导体会产生正向偏压。 在PN节,电子和空穴结合。外电场 将多数载流子推向空间电荷区使 其变窄。由于电源的作用，当PN 节正向偏压，扩散运动源源不断 的进行，从而形成正向电流，PN 节导通。
• When the polarity of the power source is reversed, the semiconductor is said to be reverse biased. In practical terms, there will always be a few electrons and holes near the junction, allowing a very small current to pass. This small current is known as leakage current and is usually in the order of a few microamperes
• 基本双极性晶体管运作。 一般的双极性晶体管中,电流在E-b节 和C-b节之间流动但不在E-c中流动。但 是，由于E-c节之间有大电压，回路中 大部分电流将流过E-c节。所以大量自 由电子因扩散运动越过发射结到达基区 (反之亦然)。在基极中与电荷结合(NPN 时为正电荷，PNP时为负电荷）。
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More charge carriers will be pulled out of the emitter and made available for the collector if the base-emitter current is increased. This can be accomplished by masking the base more negative in a PNP transistor or by making the base more positive in an NPN transistor. • If the base-emitter voltage is decreased, less charge carriers will be pulled from the emitter and less emittercollector current will flow.