颗粒传感器

0.04 RDS(ON), ON-RESISTANCE (OHM)
2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) ID = 9A VGS = 10V
4
2
0 0 10 20 30 40 50 60 Qg, GATE CHARGE (nC)
D
D G S
TO-252
S G
Absolute Maximum Ratings
Symbol
VDSS VGSS ID
TA=25oC unless otherwise noted
Parameter
Drain-Source Voltage Gate-Source Voltage Maximum Drain Current-Continuous Maximum Drain Current – Pulsed
(Note 1) (Note 1a)
Ratings
80 ± 20 43 10 110
(Note 1) (Note 1a) (Note 1b)
Units
V V A
PD
Maximum Power Dissipation @TC = 25oC TA = 25 C TA = 25oC
o
69 3.4 1.3 -55 to +150
FDD3570 Rev. C(W)
FDD3570
Typical Characteristics
50 5.0V 4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V ID, DRAIN CURRENT (A) 40 6.0V
2 1.8 1.6 1.4 1.2 1 0.8 0 1 2 3 0 10 20 30 40 50 ID, DRAIN CURRENT (A)
FDD3570
November 2000
FDD3570
80V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features faster switching and lower gate change than other MOSFETs with comparable RDS(ON) specifications resulting in DC/DC power supply designs with higher overall efficiency.
(Note 2)
VDS = 40 V, f = 1.0 MHz
V GS = 0 V,
2800 230 117
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge
2
2.4 -7 15 27 16
4
V mV/°C
20 40 23
mΩ
ID(on) gFS
25 40
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage VGS = 0 V, IS = 2.8 A(Note 2)2.8 0.72 1.2
A V
Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
VGS = 4.0V 4.5V 5.0V 6.0V 7.0V 10V
30 4.0V 20
10 3.5V 0 VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
2000 Fairchild Semiconductor Corporation
FDD3570 Rev C(W)
FDD3570
Electrical Characteristics
Symbol
WDSS IAR
TA = 25°C unless otherwise noted
Parameter
Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse
ID = 10 A 0.03
TA = 125oC
0.02 TA = 25oC
0.01
0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
50 VDS = 5V ID, DRAIN CURRENT (A) 40 I S, REVERSE DRAIN CURRENT (A)
VDD = 40 V, VGS = 10 V,
ID = 1 A, RGEN = 6 Ω
20 12 60 24
32 24 95 38 76
ns ns ns ns nC nC nC
VDS = 40V, VGS = 10 V,
ID = 9 A,
54 9.6 14
Drain–Source Diode Characteristics and Maximum Ratings
VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 10 A VGS = 10 V, ID = 10 A,TJ =125°C VGS = 6 V, ID = 9 A VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 14 A
(Note 1) (Note 1b)
1.8 96
°C/W °C/W
Package Marking and Ordering Information
Device Marking FDD3570 Device FDD3570 Reel Size 13’’ Tape width 16mm Quantity 2500
Features
• 10 A, 80 V. RDS(ON) = 20 mΩ @ VGS = 10 V RDS(ON) = 23 mΩ @ VGS = 6 V
• Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 VGS = 0V 10 1 0.1 0.01 0.001 0.0001 TA = 125 C 25 C -55 C
o o o
30
20 125 C 25 C TA = -55 C 0 2 3 4 5 6 VGS, GATE TO SOURCE VOLTAGE (V)
a) RθJA = 40 °C/W when mounted on a 1in2 pad of 2 oz copper.
b) RθJA = 96 °C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%