BAS40W-05(SOT-323)肖特基二极管规格书
BAS40-05-V中文资料
BAS40-00-V to BAS40-06-VDocument Number 85701Rev. 1.7, 27-Sep-06Vishay Semiconductors1Features•These diodes feature very low turn-on voltage and fast switching•These devices are protected by a PNjunction guard ring against excessive volt-age, such as electrostatic discharges •Lead (Pb)-free component•Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/ECMechanical DataCase: SOT23, Plastic case Weight: approx. 8.8 mg Packaging Codes/Options:GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/boxParts TableAbsolute Maximum RatingsT amb = 25°C, unless otherwise specified1)Device on fiberglass substrate, see layout on next page.PartOrdering codeType MarkingRemarksBAS40-00-V BAS40-00-V -GS18 or BAS40-00-V -GS0843T ape and Reel BAS40-04-V BAS40-04-V -GS18 or BAS40-04-V -GS0844T ape and Reel BAS40-05-V BAS40-05-V -GS18 or BAS40-05-V -GS0845T ape and Reel BAS40-06-VBAS40-06-V -GS18 or BAS40-06-V -GS0846T ape and ReelParameterTest condition Symbol V alue Unit Repetitive peak reverse voltage V RRM = V RWM = V R40V Forward continuous current I F2001)mA Surge forward current t p < 1 s I FSM 6001)mA Power dissipation 1)P tot2001)mW 2Document Number 85701Rev. 1.7, 27-Sep-06BAS40-00-V to BAS40-06-VVishay Semiconductors Thermal CharacteristicsT amb = 25°C, unless otherwise specified1) Device on fiberglass substrate, see layout on next page.Electrical CharacteristicsT amb = 25°C, unless otherwise specifiedLayout for R thJA testThickness:Fiberglass 1.5 mm (0.059 in.)Copper leads 0.3 mm (0.012 in.)ParameterTest condition Symbol V alue Unit Thermal resistance junction to ambient air R thJA 5001)K/W Junction temperature T j 125°C Storage temperature rangeT stg- 65 to + 125°CParameterT est conditionSymbol Min Typ.MaxUnit Reverse breakdown voltage I R = 10 μA (pulsed)V (BR)40V Leakage current Pulse test V R = 30 V , t p < 300 µs I R 20100nA Forward voltagePulse test t p < 300 µs, I F = 1.0 mAV F 380m V Pulse test t p < 300 µs, I F = 40 mAV F 1000m V Diode capacitance V R = 0 V , f = 1 MHz C D 4.05pF Reverse recovery timeI F = I R = 10 mA, i R = 1 mA, R L = 100 Ωt rr5nsBAS40-00-V to BAS40-06-VDocument Number 85701Rev. 1.7, 27-Sep-06Vishay Semiconductors3Package Dimensions in mm (Inches): SOT23 4Document Number 85701 Rev. 1.7, 27-Sep-06BAS40-00-V to BAS40-06-VVishay SemiconductorsOzone Depleting Substances Policy StatementIt is the policy of V ishay Semiconductor GmbH to1.Meet all present and future national and international statutory requirements.2.Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban on these substances.V ishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendmentsrespectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the EnvironmentalProtection Agency (EPA) in the USA3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. V ishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.We reserve the right to make changes to improve technical designand may do so without further notice.Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use V ishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify V ishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.V ishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, GermanyDocument Number: 91000Revision: 18-Jul-081DisclaimerLegal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件交易网。
DIODES贴片肖特基二极管BAS40选型手册
SURFACE MOUNT SCHOTTKY BARRIER DIODEProduct Summary @T A = +25°CV RRM (V) I O (mA) V Fmax (V)I Rmax (μA)40 200 1.0 0.2Description200mA surface mount Schottky Barrier Diode in SOT23 package, offers low forward voltage drop and fast switching capability, designed with PN Junction Guard Ring for Transient and ESD Protection, totally lead-free finish and RoHS compliant, ”Green” device.Features and Benefits∙Low Forward Voltage Drop∙ Fast Switching ∙ PN Junction Guard Ring for Transient and ESD Protection∙ Lead-Free Finish; RoHS Compliant (Notes 1 & 2) ∙ Halogen and Antimony Free. “Green” Device (Note 3) ∙Qualified to AEC-Q101 Standards for High ReliabilityMechanical Data∙ Case: SOT23 ∙ Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0∙ Moisture Sensitivity: Level 1 per J-STD-020D∙ Terminals: Solderable per MIL-STD-202, Method 208 ∙ Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe).∙ Polarity: See Diagrams Below ∙ Weight: 0.008 grams (approximate)Top View BAS40 BAS40-04 BAS40-05BAS40-06Ordering Information (Note 4 & 5)Part NumberCase Packaging BAS40-7-F / BAS40Q-7-F SOT23 3000/Tape & Reel BAS40-04-7-F / BAS40-04Q-7-F SOT23 3000/Tape & Reel BAS40-05-7-F / BAS40-05Q-7-F SOT23 3000/Tape & Reel BAS40-06-7-F / BAS40-06Q-7-F SOT23 3000/Tape & Reel BAS40-13-F / BAS40Q-13-F SOT23 10000/Tape & Reel BAS40-04-13-F / BAS40-04Q-13-F SOT23 10000/Tape & Reel BAS40-05-13-F / BAS40-05Q-13-F SOT23 10000/Tape & Reel BAS40-06-13-F / BAS40-06Q-13-FSOT23 10000/Tape & ReelNotes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.2. See /quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.4. For packaging details, go to our website at /products/packages.html.5. Products manufactured with Date Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Products manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb 2O 3 Fire Retardants.e3Marking InformationDate Code Key Year 1999 2000 2001 2002 2003 20042005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 Code K L MN P R S T U V W X Y Z A B CMonth Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N DMaximum Ratings (@T A = +25°C, unless otherwise specified.)CharacteristicSymbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking VoltageV RRM V RWM V R 40 V Forward Continuous Current (Note 6) I FM 200 mA Forward Surge Current (Note 6) @ t < 1.0sI FSM600mAThermal CharacteristicsCharacteristicSymbol Value Unit Power Dissipation (Note 6)P D 350 mW Thermal Resistance, Junction to Ambient Air (Note 6) R θJA 357 °C/W Operating Temperature Range T J -55 to +125 °C Storage Temperature Range T STG-65 to +150°CElectrical Characteristics (@T A = +25°C, unless otherwise specified.)CharacteristicSymbol Min Typ Max Unit Test ConditionReverse Breakdown Voltage (Note 7) V (BR)R 40 − − V I R = 10µAForward VoltageV F − − 380 1000 mV t p < 300µs, I F = 1.0mA t p < 300µs, I F = 40mA Reverse Leakage Current (Note 7) I R − 20 200 nA t p < 300µs, V R = 30V Total Capacitance C T − 4.0 5.0 pF V R = 0V, f =1.0MHzReverse Recovery Timet rr−−5.0nsI F = I R = 10mA to I R = 1.0mA, R L = 100ΩNotes: 6. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at /datasheets/ap02001.pdf. 7. Short duration pulse test used to minimize self-heating effect.xxx = Product Type Marking CodeK43 = BAS40 K44 = BAS40-04 K45 = BAS40-05 K46 = BAS40-06YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) Y M = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y = Year (ex: A = 2013) M = Month (ex: 9 = September)Chengdu A/T SiteShanghai A/T SiteT , AMBIENT TEMPERATURE (ºC)Figure 1 Power Derating Curve, T otal Package A P , P O W E R D I S S I P A T I O N (m W )D 01002003004000.010.110.0001I , I N S T A N T A N E O U S F O R W A R D C U R R E N T (A )F V , INSTANTANEOUS FORWARD VOLTAGE (V)Figure 2 Typical Forward CharacteristicsF 1101001,00010,000V , INSTANTANEOUS REVERSE VOLTAGE (V)Figure 3 Typical Reverse Characteristics R I , I N S T A N T A N E O U S R E V E R S E C U R R E N T (n A )R 220C , T O T A L C A P A C I T A N C E (p F )T V , DC REVERSE VOLTAGE (V)Figure 4 Total Capacitance vs. Reverse VoltageRPackage Outline DimensionsPlease see AP02002 at /datasheets/ap02002.pdf for latest version.Suggested Pad LayoutPlease see AP02001 at /datasheets/ap02001.pdf for the latest version.SOT23Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915F 0.45 0.60 0.535G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975K1 0.903 1.10 1.025L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110a 8°All Dimensions in mmDimensions Value (in mm)Z 2.9 X 0.8 Y 0.9 C 2.0 E1.35X EYCZA l l 7°IMPORTANT NOTICEDIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.LIFE SUPPORTDiodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:A. Life support devices or systems are devices or systems which:1. are intended to implant into the body, or2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in thelabeling can be reasonably expected to result in significant injury to the user.B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause thefailure of the life support device or to affect its safety or effectiveness.Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2013, Diodes Incorporated。
二极管封装
Package
TYPE 型 Package TYPE 型号
号
SOT-3
1N4148WS
BAT42WS
23
SD101B
SOT-323
SOT-323 MBR0530WS
WS
SOT-3
1N4448WS
BAT43WS
23
SD101C
SOT-323
SOT-323 MBR0540WS
WS
BAV16WS
SOT-3 BAT54WS
23
SOT-323
MBR052 SOT-323 BAS20W
0WS
BAS21W
SOT-3 BAV99W
23
MMBD41
SOT-323
SOT-323 BAS40W
48W
BAV70W
SOT-3 BAW56W
23
MMBD44
SOT-323
SOT-323 BAS40W-04
48W
SOT-3
BAS40W-05
Package SOT-323 SOT-323 SOT-323 SOT-323 SOT-323 SOT-323 SOT-323 SOT-323 SOT-323 SOT-323 SOT-323
五、 贴片二极管（SOT-23）封装
TYPE 型号
Packag TYPE 型号
e
TYPE 型号
Package
Package TYPE 型号
一些常用贴片二极管的封装：
贴片二极管封装（SOD-523 SOT-523） TYPE 型号 一、贴片二极管封装（SOD-523 SOT-523）
TYPE 型号
Packag TYPE 型号
e
常用肖特基二极管参数
常⽤肖特基⼆极管参数常⽤肖特基⼆极管参数型号 制造商 封装 If/A Vrrm/V 最⼤Vf/V1SS294 TOS SC-59 0.1 40 0.60BAT15-099 INF SOT143 0.11 4 0.32BAT54A PS SOT23 0.20 30 0.5010MQ060N IR SMA 0.77 90 0.6510MQ100N IR SMA 0.77 100 0.9610BQ015 IR SMB 1.00 15 0.34SS12 GS DO214 1.00 20 0.50MBRS130LT3 ON - 1.00 30 0.3910BQ040 IR SMB 1.00 40 0.53RB060L-40 ROHM PMDS 1.00 40 0.55RB160L-40 ROHM PMDS 1.00 40 0.55SS14 GS DO214 1.00 40 0.50MBRS140T3 ON - 1.00 40 0.6010BQ060 IR SMB 1.00 60 0.57SS16 GS DO214 1.00 60 0.7510BQ100 IR SMB 1.00 100 0.7815MQ040N IR SMA 1.70 40 0.55PBYR245CT PS SOT223 2.00 45 0.45 30BQ015 IR SMC 3.00 15 0.3530BQ040 IR SMC 3.00 40 0.5130BQ060 IR SMC 3.00 60 0.5830BQ100 IR SMC 3.00 100 0.79 STPS340U STM SOD6 3.00 40 0.84MBRS340T3 ON - 3.00 40 0.52RB051L-40 ROHM PMDS 3.00 40 0.45 MBRS360T3 ON - 3.00 60 0.7030WQ04FN IR DPAK 3.30 40 0.6230WQ06FN IR DPAK 3.30 60 0.7030WQ10FN IR DPAK 3.30 100 0.9130WQ03FN IR DPAK 3.50 30 0.5250WQ03FN IR DPAK 5.50 30 0.5350WQ06FN IR DPAK 5.50 60 0.576CWQ06FN IR DPAK 6.60 60 0.586CWQ10FN IR DPAK pr 6.60 100 0.81 1N5817 ON 轴向 1.00 20 0.751N5818 ON 轴向 1.00 30 0.55SB130 GS 轴向 1.00 30 0.501N5819 ON 轴向 1.00 40 0.6011DQ04 IR 轴向 1.10 40 0.5511DQ05 IR 轴向 1.10 50 0.5811DQ06 IR 轴向 1.10 60 0.58MBRS340TR IR SMC 3.00 40 0.431N5820 ON 轴向 3.00 20 0.851N5821 ON 轴向 3.00 30 0.381N5822 ON 轴向 3.00 40 0.52MBR360 ON 轴向 3.00 60 1.00SS32 GS DO214 3.00 20 3.00SS34 GS DO214 3.00 40 0.5031DQ10 IR DO201 3.30 100 0.85SB530 GS 轴向 5.00 30 0.57SB540 GS DO201 5.00 40 0.5750SQ080 IR 轴向 5.00 80 0.6650SQ100 IR 轴向 5.00 100 0.66MBR735 GS TO220 7.50 35 0.84 MBR745 GS TO220 7.50 45 0.84 MBR745 IR TO220 7.50 45 0.8480SQ040 IR 轴向 8.00 40 0.53STQ080 IR TO220 8.00 80 0.728TQ100 TO220 8.00 100 0.7280SQ040 IR 轴向 8.00 40 0.5380SQ035 IR DO204AR 8.00 35 0.53 HFA16PA60C IR TO247CT 8.00 600 1.70 95SQ015 轴向 9.00 15 0.31STPS1045F ON ISO220 10.00 45 0.64MBR2060CT ON TO220 10.00 60 0.85MBR1060 ON TO220 10.00 60 0.95 PBYR10100 PS TO220 10.00 100 0.7010TQ040 IR TO220 10.00 40 0.57MBR1045 IR TO220 10.00 45 0.8410CTQ150-1 IR D2pak 10.00 150 0.7340L15CTS IR D2pak 10.00 150 0.4185CNQ015A IR D61 80.00 15 0.32150K40A IR D08 150.00 400 1.3312CTQ040 IR TO220 12.00 45 0.73 MBR1545CT IR TO220 pr 15.00 45 0.72MBR1660 GS TO220 16.00 60 0.7516CTQ080 IR TO220 pr 16.00 80 0.7216CTQ100 IR TO220 pr 16.00 100 0.7216CTQ100-1 IR D2Pak 16.00 100 0.7218TQ045 ON TO220 18.00 45 0.60HFA16PB120 IR TO247 16.00 1200 3.00 MBR1645 IR TO220AC 16.00 45 0.63MBR2090CT IR TO220 pr 20.00 90 0.80 MBR20100CT IR TO220 pr 20.00 100 0.80MBR20100CT-1IR TO262 20.00 100 0.80 MBR2080CT IR TO220AB 20.00 80 0.85 MBR2545CT IR TO220AB 30.00 45 0.82 MBR3045WT IR TO247 30.00 4532CTQ030 IR TO220 pr 30.00 30 0.49 32CTQ303-1 IR D2Pak 30.00 30 0.4930CPQ060 IR TO220 pr 30.00 60 0.62 30CPQ080 IR TO247AC 30.00 80 0.86 30CPQ100 IR TO247 pr 30.00 100 0.86 30CPQ150 IR TO247 pr 30.00 150 1.00 40CPQ040 IR TO247 pr 40.00 40 0.49 40CPQ045 IR TO247 pr 40.00 45 0.49 40CPQ050 IR TO247AA 40.00 50 0.53 40CPQ100 IR TO247 pr 40.00 100 0.77 40L15CT IR TO220AB 40.00 15 0.5347CTQ020 IR TO220 40.00 20 0.3448CTQ060 IR TO220 40.00 60 0.5840L15CW IR TO247 40.00 15 0.5242CTQ030 IR TO220 40.00 30 0.3840CTQ045 IR TO220 40.00 45 0.6840L45CW IR TO247 40.00 45 0.7040CPQ060 ON TO247 40.00 60 0.6852CPQ030 IR TO247 50.00 30 0.38MBR6045WT IR TO247pr 60.00 45 0.73STPS6045CPI ON TOP3I 60.00 45 0.8465PQ015 IR TO247 65.00 15 0.5072CPQ030 IR TO247AC 70.00 30 0.51 85CNQ015 IR D61 80.00 15 0.3283CNQ100 IR D61 80.00 100 0.6780CPQ020 IR TO247 80.00 20 0.3282CNQ030A IR D61 80.00 30 0.3782CNQ045A IR D61 80.00 45 0.4783CNQ100A IR D61 80.00 100 0.67 120NQ045 IR HALFPAK 120.00 45 0.52 125NQ015 IR D67 120.00 15 0.33122NQ030 IR D67 120.00 30 0.41 STPS16045TV ON ISOTOP 160.00 45 0.95 182NQ030 IR D67 180.00 30 0.41200CNQ040 IR TO244AB 200.00 40 0.54 200CNQ045 IR TO244AB 200.00 45 0.54 200CNQ030 IR TO244AB 200.00 30 0.48 STPS24045TV ON ISOTOP 240.00 45 0.91 203CMQ080 IR TO244 200.00 80 1.03 240NQ045 IR HALFPAK 240.00 45 0.55 301CNQ045 IR TO244 300.00 45 0.59 403CNQ100 IR TO244AB 400.00 100 0.83 440CNQ030 IR TO244AB 440.00 30 0.41肖特基⼆极管肖特基整流⼆极管型号额定I（AV）AVRRM V向峰值电压浪涌电流IFSM A反向恢复时间nsSB0200.6202010 SB0300.6302010 SB0400.6402010 1N58171202510 1N58181302510 1N58191402510 SB1201204010 SB1301304010 SB1401404010 SB150150405 SB160160405 SR1201204020 SR1301304020 SR1401404020 SR1501504020 SR1601604020 SR1801804020 SR1A011004020 SB2202205020 SB2302305020 SB2402405020 SB2502505020 SB2602605020 SR2202205010 SR2302305010 SR2402405010 SR2502505010 SR2602605010 SR2802805010 SR2A021005010 1N58203208020 1N58213308020 1N58223408020 SB3203208020 SB3303308020 SB3403408020 SB3503508010 SB3603608010 SR3203208020SR3503508020 SR3603608020 SR3803808020 SR3A031008020 SB52052015050 SB53053015050 SB54054015050 SB55055015025 SB56056015025 SR52052015050 SR53053015050 SR54054015050 SR55055015025 SR56056015025 SR58058015025 SR5A0510015025。
FOSAN富信电子 二级管 BAS70WS-产品规格书
安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.BAS70WSSOD-323Schottky Barrier Diode 肖特基势垒二极管▉Internal Configuration&DeviceMarking 内部结构与产品打标Type 型号BAS70WSPin 管脚Mark 打标K73▉AbsoluteMaximum Ratings 最大额定值Characteristic 特性参数Symbol 符号Rat 额定值Unit 单位Peak Reverse V oltage 反向峰值电压V RRM 70V Reverse Work Voltage 反向工作电压V RWM DC Reverse Voltage 直流反向电压V R Forward Work Current 正向工作电流I F (I O )70mA Peak Forward Surge Current 正向峰值浪涌电流I FSM100mA Power dissipation 耗散功率P D (Ta=25℃)200mW Thermal Resistance J-A 结到环境热阻R θJA 500℃/WJunction and Storage Temperature 结温和储藏温度T J ,T stg-55to+125℃■Electrical Characteristics 电特性(T A =25℃unless otherwise noted 如无特殊说明，温度为25℃)Characteristic 特性参数Symbol 符号Min 最小值Max 最大值Unit 单位Reverse Breakdown Voltage 反向击穿电压(I R =10µA)V (BR)70—V Reverse Leakage Current 反向漏电流(V R =50V)I R —0.1µA Forward V oltage(I F =1mA)正向电压(I F =15mA)V F 0.411V Diode Capacitance 二极管电容(V R =0V,f=1MHz)C D—2pF Reverse Recovery Time 反向恢复时间(IF=IR=10mA Irr=0.1XIR,RL=100Ω)T rr—5nSANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.BAS70WS ■Typical Characteristic Curve典型特性曲线ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.BAS70WS ■Dimension外形封装尺寸。
常用肖特基二极管参数
常用肖特基二极管参数型号制造商封装 If/A Vrrm/V 最大Vf/V1SS294 TOS SC-59 0.140 0.60BAT15-099 INF SOT143 0.11 40.32BAT54A PS SOT23 0.20 30 0.5010MQ060N IR SMA 0.7790 0.6510MQ100N IR SMA 0.77 100 0.9610BQ015 IR SMB 1.0015 0.34SS12 GS DO214 1.0020 0.50MBRS130LT3 ON - 1.0030 0.3910BQ040 IR SMB 1.0040 0.53RB060L-40 ROHM PMDS 1.00 40 0RB160L-40 ROHM PMDS 1.00 400.55SS14 GS DO214 1.0040 0.5MBRS140T3 ON - 1.0040 0.10BQ060 IR SMB 1.0060 0.57SS16 GS DO214 1.0060 0.7510BQ100 IR SMB 1.00 100 0.78MBRS1100T3 ON - 1.00 100 0.7510MQ040N IR SMA 1.10 40 0.5115MQ040N IR SMA 1.7040 0.55PBYR245CT PS SOT223 2.00 450.4530BQ015 IR SMC 3.0015 0.3530BQ040 IR SMC 3.0040 0.5130BQ060 IR SMC 3.0060 0.5830BQ100 IR SMC 3.00100 0.79STPS340U STM SOD6 3.00 40 0.84MBRS340T3 ON - 3.0040 0.52RB051L-40 ROHM PMDS 3.00 400.45MBRS360T3 ON - 3.0060 0.7030WQ04FN IR DPAK 3.3040 0.6230WQ06FN IR DPAK 3.30 60 0.7030WQ10FN IR DPAK 3.30 100 0.9130WQ03FN IR DPAK 3.50 30 0.5250WQ03FN IR DPAK 5.50 30 0.5350WQ06FN IR DPAK 5.50 60 0.576CWQ06FN IR DPAK 6.60 60 0.586CWQ10FN IR DPAKpr 6.60 100 0.811N5817 ON 轴向 1.00 20 0.751N5818 ON 轴向 1.00 30 0.55SB130 GS 轴向 1.00 30 0.50 1N5819 ON 轴向 1.00 40 0.60 MBR150 ON 轴向 1.00 50 1.00 MBR160 ON 轴向 1.00 60 1.00 11DQ10 IR 轴向 1.10 100 0.8511DQ04 IR 轴向 1.10 40 0.5511DQ05 IR 轴向 1.10 50 0.5811DQ06 IR 轴向 1.10 60 0.58MBRS340TR IR SMC 3.0040 0.431N5820 ON 轴向 3.00 20 0.851N5821 ON 轴向 3.00 30 0.381N5822 ON 轴向 3.00 40 0.52MBR360 ON 轴向 3.00 60 1.00SS32 GS DO214 3.0020 3.00SS34 GS DO214 3.0040 0.5031DQ10 IR DO201 3.30 100 0.85SB530 GS 轴向 5.00 30 0.57SB540 GS DO201 5.0040 0.5750SQ080 IR 轴向 5.00 80 0.6650SQ100 IR 轴向 5.00 100 0.66MBR735 GS TO220 7.5035 0.84MBR745 GS TO220 7.5045 0.84MBR745 IR TO220 7.5045 0.8480SQ040 IR 轴向 8.00 40 0.53STQ080 IR TO220 8.0080 0.728TQ100 TO220 8.00 100 0.7280SQ040 IR 轴向 8.00 40 0.5380SQ035 IR DO204AR 8.00 3 5 0.53HFA16PA60C IR TO247CT 8.00 6001.7095SQ015 轴向 9.00 15 0.3190SQ040 轴向 9.00 40 0.4810TQ045 TO220 10.0045 0.57MBR1035 GS TO220 10.0035 0.84MBR1045 ON TO220 10.0045 0.84STPS1045F ON ISO220 10.00 450.64MBR2060CT ON TO220 10.00 600.85MBR1060 ON TO220 10.0060 0.95PBYR10100 PS TO220 10.00 10 0 0.7010TQ040 IR TO220 10.0040 0.57MBR1045 IR TO220 10.0045 0.8410CTQ150-1 IR D2pak 10.00 15 0 0.7340L15CTS IR D2pak 10.00150 0.4185CNQ015A IR D61 80.0015 0.32150K40A IR D08 150.00400 1.3312CTQ040 IR TO220 12.00 450.73MBR1545CT IR TO220pr 15.00 45 0.72MBR1660 GS TO220 16.00 60 0.7516CTQ080 IR TO220pr 16.00 80 0.7216CTQ100 IR TO220pr 16.00 100 0.7216CTQ100-1 IR D2Pak 16.00 1000.7218TQ045 ON TO220 18.0045 0.60HFA16PB120 IR TO247 16.00 12003.00MBR1645 IR TO220AC 16.00 450.6319CTQ015 IR TO220 19.00 150.3620CTQ045 IR TO220pr 20.00 45 0.6420TQ045 IR TO220 20.0045 0.57MBR2045CT IR TO220pr 20.00 45 0.84MBR2090CT IR TO220pr 20.00 90 0.80MBR20100CT IR TO220pr 20.00 100 0.80MBR20100CT-1IR TO262 20.00 1000.80MBR2080CT IR TO220AB 20.00 800.85MBR2545CT IR TO220AB 30.00 450.82MBR3045WT IR TO247 30.00 4532CTQ030 IR TO220pr 30.00 30 0.4932CTQ303-1 IR D2Pak 30.00 300.4930CPQ060 IR TO220pr 30.00 60 0.6230CPQ080 IR TO247AC 30.00 800.8630CPQ100 IR TO247pr 30.00 100 0.8630CPQ150 IR TO247pr 30.00 150 1.0040CPQ040 IR TO247pr 40.00 40 0.4940CPQ045 IR TO247pr 40.00 45 0.4940CPQ050 IR TO247AA 40.00 500.5340CPQ100 IR TO247pr 40.00 100 0.7740L15CT IR TO220AB 40.00 150.5347CTQ020 IR TO220 40.00 200.3448CTQ060 IR TO220 40.00 600.5840L15CW IR TO247 40.0015 0.5242CTQ030 IR TO220 40.00 300.3840CTQ045 IR TO220 40.00 450.6840L45CW IR TO247 40.0045 0.7040CPQ060 ON TO247 40.00 600.68MBR4045WT IR TO247 40.00 450.59MBR4060WT IR TO247 40.00 600.7743CTQ100 IR TO220 40.00 10 0 0.9852CPQ030 IR TO247 50.0030 0.38MBR6045WT IR TO247pr 60.00 450.73STPS6045CPI ON TOP3I 60.00 450.8465PQ015 IR TO247 65.0015 0.5072CPQ030 IR TO247AC 70.00 300.5185CNQ015 IR D61 80.0015 0.3283CNQ100 IR D61 80.00100 0.6780CPQ020 IR TO247 80.0020 0.3282CNQ030A IR D61 80.0030 0.3782CNQ045A IR D61 80.0045 0.4783CNQ100A IR D61 80.00100 0.67120NQ045 IR HALFPAK 120.00 450.52125NQ015 IR D67 120.0015 0.33122NQ030 IR D67 120.0030 0.41STPS16045TV ON ISOTOP 160.00 450.95182NQ030 IR D67 180.0030 0.41200CNQ040 IR TO244AB 200.00 400.54200CNQ045 IR TO244AB 200.00 450.54200CNQ030 IR TO244AB 200.00 300.48STPS24045TV ON ISOTOP 240.00 450.91203CMQ080 IR TO244 200.00 8 0 1.03240NQ045 IR HALFPAK 240.00 450.55301CNQ045 IR TO244 300.00 4 5 0.59403CNQ100 IR TO244AB 400.00 1000.83440CNQ030 IR TO244AB 440.00 300.41（注：素材和资料部分来自网络，供参考。
BAS40-05中文资料
.30 (7.5) .12 (3)
.04 (1)
.08 (2) .04 (1) .08 (2)
.59 (15) .47 (12)
.03 (0.8)
0.2 (5)
.06 (1.5) .20 (5.1)
Dimensions in inches (millimeters)
Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm)
1)
Value 40 2001) 6001) 2001) 150 –55 to +150
Unit V mA mA mW °C °C
VRRM IF IFSM Ptot Tj TS
Device on fiberglass substrate, see layout
4/98
元器件交易网
元器件交易网
BAS40 THRU BAS40-06
Schottky Diodes
SOT-23
.122 (3.1) .118 (3.0) .016 (0.4) 3
FEATURES ♦ These diodes feature very low turn-on
Top View
BAS40 THRU BAS40-06
ELECTRICAL CHARACTERISTICS
Ratings for one diode at 25 °C ambient temperature unless otherwise specified
Symbol Reverse Breakdown Voltage Tested with 10 µA Pulses Leakage Current Pulse Test tp < 300 µs at VR = 30 V Forward Voltage Pulse Test tp < 300 µs at IF = 1 mA at IF = 40 mA Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time from IF = 10 mA through IR = 10 mA to IR = 1 mA Thermal Resistance Junction to Ambient Air
FOSAN富信电子 二级管 BAS40WS-产品规格书
安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.BAS40WSSOD-323Schottky Barrier Diode 肖特基势垒二极管▉Internal Configuration&DeviceMarking 内部结构与产品打标Type 型号BAS40WSPin 管脚Mark 打标43▉AbsoluteMaximum Ratings 最大额定值Characteristic 特性参数Symbol 符号Rat 额定值Unit 单位Peak Reverse V oltage 反向峰值电压V RRM 40V Reverse Work Voltage 反向工作电压V RWM DC Reverse Voltage 直流反向电压V R Forward Work Current 正向工作电流I F (I O )200mA Peak Surge Forward Current 正向峰值浪涌电流I FSM600mA Power dissipation 耗散功率P D (Ta=25℃)200mW Thermal Resistance J-A 结到环境热阻R θJA 500℃/WJunction and Storage Temperature 结温和储藏温度T J ,T stg-55to+125℃■Electrical Characteristics 电特性(T A =25℃unless otherwise noted 如无特殊说明，温度为25℃)Characteristic 特性参数Symbol 符号Min 最小值Max 最大值Unit 单位Reverse Breakdown Voltage 反向击穿电压(I R =10µA)V (BR)40—V Reverse Leakage Current 反向漏电流(V R =30V)I R —0.2µA Forward V oltage(I F =1mA)正向电压(I F =10mA)(I F =40mA)V F 0.380.51V Diode Capacitance 二极管电容(V R =0V,f=1MHz)C D—5pF Reverse Recovery Time 反向恢复时间(IF=IR=10mA Irr=0.1XIR,RL=100Ω)T rr—5nSANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.BAS40WS ■Typical Characteristic Curve典型特性曲线ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.BAS40WS ■Dimension外形封装尺寸。
BAS40-06中文资料
DISCRETE SEMICONDUCTORS
DATA SHEET
age
M3D088
M3D071
BAS40 series Schottky barrier (double) diodes
Product specification Supersedes data of 1997 Oct 24
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(4) Tamb = −40 °C.
Fig.3 Forward current as a function of forward voltage; typical values.
Product specification
tp ≤ 1 s; δ ≤ 0.5 tp < 10 ms
MIN. MAX. UNIT
−
40
V
−
120
mA
−
120
mA
−
200
mA
−65
+150 °C
−
150
°C
−65
+150 °C
ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified.
APPLICATIONS • Ultra high-speed switching • Voltage clamping • Protection circuits • Blocking diodes.
PINNING SOT23 (see Fig.1a)
DESCRIPTION
PIN
BAS40
bas 40中文资料
2
Oct-07-1999
元器件交易网
BAS 40 ...
Forward current IF = f (VF )
TA = 25°C
10 2
BAS 40... EHB00038
Reverse current IR = f (VR)
TA = Parameter
BAS 40... EHB00039
ΙF
3
Oct-07-1999
元器件交易网
BAS 40 ...
Forward current IF = f (TA *;TS ) * Package mounted on epoxy
200
BAS 40... EHB00150
ΙF
mA 160 140 120 100 80 TA 60 40 20 0 0 50 100 ˚C 150 TS
Pin Configuration 1=A 1 = A1 1 = A1 1 = C1 2 n.c. 2 = C2 2 = A2 2 = C2
Package SOT-23 SOT-23 SOT-23 SOT-23
Maximum Ratings Parameter Diode reverse voltage Forward current Surge forward current, t ≤ 10 ms Total power dissipation BAS 40, TS ≤ 81°C BAS 40-04, BAS 40-05, BAS 40-06 , TS ≤ 55°C Junction temperature Operating temperature range Storage temperature Thermal Resistance Junction - ambient 1) BAS 40 Junction - ambient BAS 40-04 ... Junction - soldering point BAS 40 Junction - soldering point BAS 40-04 ...
(整理)常用肖特基二极管参数
常用肖特基二极管参数型号制造商封装 If/A Vrrm/V 最大Vf/V1SS294 TOS SC-59 0.140 0.60BAT15-099 INF SOT143 0.11 40.32BAT54A PS SOT23 0.20 30 0.5010MQ060N IR SMA 0.7790 0.6510MQ100N IR SMA 0.77 100 0.9610BQ015 IR SMB 1.0015 0.34SS12 GS DO214 1.0020 0.50MBRS130LT3 ON - 1.0030 0.3910BQ040 IR SMB 1.0040 0.53RB060L-40 ROHM PMDS 1.00 40 0RB160L-40 ROHM PMDS 1.00 400.55SS14 GS DO214 1.0040 0.5MBRS140T3 ON - 1.0040 0.10BQ060 IR SMB 1.0060 0.57SS16 GS DO214 1.0060 0.7510BQ100 IR SMB 1.00 100 0.78MBRS1100T3 ON - 1.00 100 0.7510MQ040N IR SMA 1.10 40 0.5115MQ040N IR SMA 1.7040 0.55PBYR245CT PS SOT223 2.00 450.4530BQ015 IR SMC 3.0015 0.3530BQ040 IR SMC 3.0040 0.5130BQ060 IR SMC 3.0060 0.5830BQ100 IR SMC 3.00100 0.79STPS340U STM SOD6 3.00 4 0 0.84MBRS340T3 ON - 3.0040 0.52RB051L-40 ROHM PMDS 3.00 400.45MBRS360T3 ON - 3.0060 0.7030WQ04FN IR DPAK 3.30 40 0.6230WQ06FN IR DPAK 3.30 60 0.7030WQ10FN IR DPAK 3.30 100 0.9130WQ03FN IR DPAK 3.50 30 0.5250WQ03FN IR DPAK 5.50 30 0.5350WQ06FN IR DPAK 5.50 60 0.576CWQ06FN IR DPAK 6.60 60 0.586CWQ10FN IR DPAKpr 6.60 100 0.811N5817 ON 轴向 1.00 20 0.751N5818 ON 轴向 1.00 30 0.55SB130 GS 轴向 1.00 30 0.50 1N5819 ON 轴向 1.00 40 0.60 MBR150 ON 轴向 1.00 50 1.00 MBR160 ON 轴向 1.00 60 1.00 11DQ10 IR 轴向 1.10 100 0.8511DQ04 IR 轴向 1.10 40 0.55 11DQ05 IR 轴向 1.10 50 0.5811DQ06 IR 轴向 1.10 60 0.58MBRS340TR IR SMC 3.0040 0.431N5820 ON 轴向 3.00 20 0.851N5821 ON 轴向 3.00 30 0.381N5822 ON 轴向 3.00 40 0.52MBR360 ON 轴向 3.00 60 1.00SS32 GS DO214 3.0020 3.00SS34 GS DO214 3.0040 0.5031DQ10 IR DO201 3.30 100 0.85SB530 GS 轴向 5.00 30 0.57SB540 GS DO201 5.0040 0.5750SQ080 IR 轴向 5.00 80 0.6650SQ100 IR 轴向 5.00 100 0.66MBR735 GS TO220 7.50 35 0.84MBR745 GS TO220 7.50 45 0.84MBR745 IR TO220 7.50 45 0.8480SQ040 IR 轴向 8.00 40 0.53STQ080 IR TO220 8.0080 0.728TQ100 TO220 8.00 100 0.7280SQ040 IR 轴向 8.00 40 0.5380SQ035 IR DO204AR 8.00 3 5 0.53HFA16PA60C IR TO247CT 8.00 6001.7095SQ015 轴向 9.00 15 0.3190SQ040 轴向 9.00 40 0.4810TQ045 TO220 10.0045 0.57MBR1035 GS TO220 10.0035 0.84MBR1045 ON TO220 10.00STPS1045F ON ISO220 10.00 450.64MBR2060CT ON TO220 10.00 600.85MBR1060 ON TO220 10.0060 0.95PBYR10100 PS TO220 10.00 10 0 0.7010TQ040 IR TO220 10.0040 0.57MBR1045 IR TO220 10.0045 0.8410CTQ150-1 IR D2pak 10.00 15 0 0.7340L15CTS IR D2pak 10.0085CNQ015A IR D61 80.0015 0.32150K40A IR D08 150.00400 1.3312CTQ040 IR TO220 12.00 450.73MBR1545CT IR TO220pr 15.00 45 0.72MBR1660 GS TO220 16.0060 0.7516CTQ080 IR TO220pr 16.00 80 0.7216CTQ100 IR TO220pr 16.00 100 0.7216CTQ100-1 IR D2Pak 16.00 1000.7218TQ045 ON TO220 18.0045 0.60HFA16PB120 IR TO247 16.00 12003.00MBR1645 IR TO220AC 16.00 450.6319CTQ015 IR TO220 19.00 150.3620CTQ045 IR TO220pr 20.00 45 0.6420TQ045 IR TO220 20.0045 0.57MBR2045CT IR TO220pr 20.00 45 0.84MBR2090CT IR TO220pr 20.00 90 0.80MBR20100CT IR TO220pr 20.00 100 0.80MBR20100CT-1IR TO262 20.00 1000.80MBR2080CT IR TO220AB 20.00 800.85MBR2545CT IR TO220AB 30.00 450.82MBR3045WT IR TO247 30.00 4532CTQ030 IR TO220pr 30.00 30 0.4932CTQ303-1 IR D2Pak 30.00 300.4930CPQ060 IR TO220pr 30.00 60 0.6230CPQ080 IR TO247AC 30.00 800.8630CPQ100 IR TO247pr 30.00 100 0.8630CPQ150 IR TO247pr 30.00 150 1.0040CPQ040 IR TO247pr 40.00 40 0.4940CPQ045 IR TO247pr 40.00 45 0.4940CPQ050 IR TO247AA 40.00 500.5340CPQ100 IR TO247pr 40.00 100 0.7740L15CT IR TO220AB 40.00 150.5347CTQ020 IR TO220 40.00 200.3448CTQ060 IR TO220 40.00 600.5840L15CW IR TO247 40.0015 0.5242CTQ030 IR TO220 40.00 300.3840CTQ045 IR TO220 40.00 450.6840L45CW IR TO247 40.0045 0.7040CPQ060 ON TO247 40.00 600.68MBR4045WT IR TO247 40.00 450.59MBR4060WT IR TO247 40.00 600.7743CTQ100 IR TO220 40.00 10 0 0.9852CPQ030 IR TO247 50.0030 0.38MBR6045WT IR TO247pr 60.00 450.73STPS6045CPI ON TOP3I 60.00 450.8465PQ015 IR TO247 65.0015 0.5072CPQ030 IR TO247AC 70.00 300.5185CNQ015 IR D61 80.0015 0.3283CNQ100 IR D61 80.00100 0.6780CPQ020 IR TO247 80.0020 0.3282CNQ030A IR D61 80.0030 0.3782CNQ045A IR D61 80.0045 0.4783CNQ100A IR D61 80.00100 0.67120NQ045 IR HALFPAK 120.00 450.52125NQ015 IR D67 120.0015 0.33122NQ030 IR D67 120.0030 0.41STPS16045TV ON ISOTOP 160.00 450.95182NQ030 IR D67 180.0030 0.41200CNQ040 IR TO244AB 200.00 400.54200CNQ045 IR TO244AB 200.00 450.54200CNQ030 IR TO244AB 200.00 300.48STPS24045TV ON ISOTOP 240.00 450.91203CMQ080 IR TO244 200.00 8 0 1.03240NQ045 IR HALFPAK 240.00 450.55301CNQ045 IR TO244 300.00 4 5 0.59403CNQ100 IR TO244AB 400.00 1000.83440CNQ030 IR TO244AB 440.00 300.41。
常用的肖特基二极管型号及参数
常用的肖特基二极管型号及参数肖特基二极管（Schottky Diode）是一种由半导体材料制成的二极管，其具有较快的开关速度、低的开关功耗和较小的反向恢复时间等优点。
在电子设备和电路中广泛使用，特别是在高频应用、功率电子和数字和模拟电路中。
下面是一些常用的肖特基二极管型号及其参数的介绍。
1.1N5817-正向电压降：0.45V-最大正向连续电流：1A-反向漏电流：10uA-耐反向电压：20V- 反向恢复时间：15ns2.BAT41-正向电压降：0.37V-最大正向连续电流：100mA-反向漏电流：150nA-耐反向电压：30V- 反向恢复时间：4ns3.BAT85-正向电压降：0.37V-最大正向连续电流：200mA -反向漏电流：150nA-耐反向电压：40V- 反向恢复时间：4ns4.SB540-正向电压降：0.55V-最大正向连续电流：5A-反向漏电流：200uA-耐反向电压：40V- 反向恢复时间：25ns5.MBR2045CT-正向电压降：0.75V-最大正向连续电流：20A -反向漏电流：300uA-耐反向电压：45V- 反向恢复时间：35ns-正向电压降：0.75V-最大正向连续电流：20A -反向漏电流：300uA-耐反向电压：100V- 反向恢复时间：40ns7.11DQ06-正向电压降：0.65V-最大正向连续电流：1A-反向漏电流：10uA-耐反向电压：60V- 反向恢复时间：20ns-正向电压降：0.52V-最大正向连续电流：16A-反向漏电流：50uA-耐反向电压：45V- 反向恢复时间：16ns9. TPSMBxxA-正向电压降：0.65V-最大正向连续电流：600mA-反向漏电流：5uA-耐反向电压：5-180V（不同型号可选）- 反向恢复时间：5-50ns（不同型号可选）10.LMBS82-正向电压降：0.32V-最大正向连续电流：100mA-反向漏电流：5uA-耐反向电压：20V- 反向恢复时间：4ns以上是一些常见的肖特基二极管型号及其参数的介绍。
B0540W肖特基二极管
3.86(0.152) 3.56(0.145)
2.84(0.112) 2.54(0.100)
3.9(0.154) 3.7(0.146)
2.7(0.106) 2.6(0.102)
MECHANICAL DATA
.71(0.028) .50(0.020) .15(.006) MAX 1.35(.053) .94(.037) .135(.005) .127(.004) 0.6(.023) 0.5(.020) 1.15(.045) 1.05(.041)
第 2 页 共 2 页
.25(.010) MIN
Case: Molded plastic body Terminals: Plated leads solderable per MIL-STD-750, Method 2026 Polarity: Polarity symbols marked on case Marking: B0520LW:SD, B0530W:SE, B0540W:SF
Dimensions in millimeters and (inches)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum ratings and electrical characteristics, Single diode @TA=25C PARAMETER Peak repetitive peak reverse voltage Working peak reverse voltage DC Blocking voltage RMS Reverse voltage Average rectified output current Peak forward surge current Power dissipation Thermal resistance junction to ambient Storage temperature Voltage rate of change Electrical ratings @TA=25C PARAMETER Minimum reverse breakdomn voltage
- 1、下载文档前请自行甄别文档内容的完整性，平台不提供额外的编辑、内容补充、找答案等附加服务。
- 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
- 3、如文档侵犯您的权益，请联系客服反馈,我们会尽快为您处理(人工客服工作时间：9:00-18:30)。
Symbol
Test conditions
Min
V(BR)
IR= 10μA
40
IR
VR=30V
VF
IF=1mA
IF=40mA
CD
VR=0,f=1MHz
t rr
Irr=1mA, IR=IF=10mA
RL=100Ω
Max
Unit
V
200
nA
380 mV
1000
5
pF
5
ns
B,Jul,2012
【领先的片式无源器件整合供应商—南京南山半导体有限公司】
回访记录
□已联系确认 日期：
□已建议执行 日期：
□未发送但已下单 日期：
□已发送样品 日期：
□客户已签收 日期：
第1页共1页
单机用量 申请数量 备注
预计生产情况
预计小批量生产时间：
规模生产时间：
样品申请时间：
样品申请流程
1、请详细、全面、真实填写上列各项。表格不够填写，可自行复制。 2、请以附件的形式将该文档通过 E-mail 发送，并请客户将此单打印盖章后 邮件至：Service@nsc。 。 3、公司将根据客户所填信息并综合相关情况，及时确定该样品申请是否执行及如何执行。 4、收到样品申请单并经审核通过后，南京公司有现货24小时内发出，如需订货，交期3-4周，非常规品顺延1-2 周。 5、样品免费，运费到付(一般选择顺丰快递)；样品数量规定：单个型号5～20pcs， 或按单机数量2～5套。 6、特别说明：由于体制约束等不确定因素，我们并不保证样品数量和型号完全符合要求，也不承诺一定按期 交出。
FEATURES z Low Forward Voltage z Fast Switching
SOT-323
BAS40W MARKING: 43• BAS40W-06 MARKING: 46
Maximum Ratings @Ta=25℃
BAS40W-05 MARKING：45
BAS40W-04 MARKING：44
Symbol
VRRM VRWM
VR IFM PD RθJA TJ TSTG
Limit
40
200 150 667 125 -55~+150
Unit
V
mA mW ℃/W ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Reverse recovery time
联系资料
电话：
南京南山半导体有限公司－样品申请单
技术支持：
传真：
电邮：Service@
客户基本资料
公司名称
联系方式
电话：
收货地址
ห้องสมุดไป่ตู้
主要产品
联络人
姓名：
电话：
传真：
职务： 手机：
网址：
□技术 □采购 □贸易商 邮箱：
元器件明细资料
元器件名称 型号及封装
Parameter
Peak repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage Forward continuous current Power dissipation Thermal resistance junction to ambient Junction temperature Storage temperature range
【领先的片式无源器件整合供应商—南京南山半导体有限公司】
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Diodes
BAS40W/-04/-05/-06 SCHOTTKY BARRIER DIODE