TVS二极管1.5SMC选型手册(规格书)

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S5贴片二极管规格书(常州星海)

【领先的片式无源器件整合供应商 — 南京南山半导体有限公司】

SD103BW
SOD-123
1.80(.071) 1.40(.055) 1.65(.065) 1.55(.061)
SCHTTKY DIODES
FEATURES
Low forward voltage drop Guard ring construction for transient protection Negligible reverse recovery time low reverse capacitance
3.86(0.152) 3.56(0.145)
2.84(0.112) 2.54(0.100)
3.9(0.154) 3.7(0.146)
2.7(0.106) 2.6(0.102)
.71(0.028) .50(0.020) .15(.006) MAX 1.35(.053) .94(.037) .135(.005) .127(.004)
.25(.010) MIN
Dimensions in millimeters and (inches)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum ratings and electrical characteristics, Single diode @TA=25C PARAMETER Peak repetitive peak reverse voltage Working peak reverse voltage DC Blocking voltage RMS Reverse voltage Forward continuous current Repetitive peak forward current @t 1.0s Power dissipation Thermal resistance junction to ambient Storage temperature Electrical ratings @TA=25 C PARAMETER Reverse breakdown voltage SD103AW SD103BW SD103CW

通用型贴片电容规格书(选型手册)

【南京南山半导体有限公司 — 贴片电容选型资料】MULTILAYER CHIP CERAMIC CAPACITORCOG/COHCOG, ,-55125,030ppm/060ppm/0805CG101J500NT(PF) ( 0402 0.04 0603 0.06 0805 0.08 1206 0.12 ) 0.02 0.03 0.05 0.06 1.00 1.60 2.00 3.20 ( ) 0.50 0.80 1.25 1.60 CG CH COG NPO COH 100 101 102 10 100 1J G C B D5.00% 2.00% 0.25PF 0.10PF 0.50PF10 10 10 1026R3 100 250 5006.3V 10V 25V 50VS C N / / T BWBWTL mm L 0402 0603 0805 1206 1005 1608 2012 3216 1.00 1.60 2.00 3.20 0.05 0.10 0.20 0.30 W 0.50 0.80 1.25 1.60 0.05 0.50 0.10 0.80 0.20 0.80 1.00 1.25 0.20 0.80 1.00 1.25 T WB 0.05 0.25 0.10 0.30 0.20 0.50 0.20 0.20 0.20 0.60 0.20 0.20 0.10 0.10 0.20 0.3015【南京南山半导体有限公司 — 贴片电容选型资料】0.80 0.20 1.00 0.20 0.50 0.80 0.20 1.00 0.20 0.600.20 0.30【南京南山半导体有限公司 — 贴片电容选型资料】MULTILAYER CHIP CERAMIC CAPACITORCOG/COH 0402 0603 0805 12066.3V 10V 16V 25V 50V 6.3V 10V 16V 25V 50V 6.3V 10V 16V 25V 50V 6.3V 10V 16V 25V 50V0.5PF 1PF 2PF 3PF 4PF 5PF 6PF 7PF 10PF 22PF 33PF 47PF 68PF 100PF 120PF 150PF 180PF 220PF 330PF 470PF 560PF 680PF 1000PF 2200PF 2700PF 3300PF 4700PF 5600PF 6800PF 10nF 12nF 15nF 22nF 47nF 68nF 100nF17【南京南山半导体有限公司 — 贴片电容选型资料】04020603080512066.3V 10V 16V 25V 50V 6.3V 10V 16V 25V 50V 6.3V 10V 16V 25V 50V 6.3V 10V 16V 25V 50VCapacitance0.5PF 1PF 2PF 3PF 4PF 5PF 6PF 7PF 10PF 22PF 33PF 47PF 68PF 100PF 120PF 150PF 180PF 220PF 330PF 470PF 560PF 680PF 1000PF 2200PF 2700PF 3300PF 4700PF 5600PF 6800PF 10nF 12nF 15nF 22nF 47nF 68nF 100nF【南京南山半导体有限公司 — 贴片电容选型资料】MULTILAYER CHIP CERAMIC CAPACITORCOG COHPH~SLCOG PH SH SL TH RH UJCOH1-55125-55851. 2. 3. 2 4. 5. , , , , , 103 4 Cr 5PF 0.56% -4 5PF Cr 50PF 1.5 [(150/Cr)+7] 10 Cr 50PF 0.15% C C 10nF Ri 10nF Ri 5 10 Cr 500s 3 50mA 150+0/-10 8 25 9 75 235 5 2 0.5 25 60 265 10 1 25 : 1 2 100 170 120 200 1 1 2.5mm/ 24 2 5 5 5 2.5mm/ 245 24 -55 125 2 -55 85 60 510:HP4278A 1. 2. 3. (D.F.) :1.0 C : : (HP4284 25 5 0.2V 0.1MHz; 0.1KHZ ) 1000PF,1.0 :SF2511 , 60 60 1 5 :30% 75%5:C<1000PF,1.06I.R.7>3x150+0/-10 5% 0.5PF D.F. 10 I.R. 24 245【南京南山半导体有限公司 — 贴片电容选型资料】General COGCOHPHSL MLCC reliability test methodStandard Number Item COG COH MLCC for General-use -55 125 PH, RH, SH, TH, UJ, SL MLCC for General-use -55 85 Check by using microscope 10 . Test Method1Operating Temperature RangeAppearance21.Good ceramic body color continuity. 2.The chips have no visual damages and must be very smooth. 3.No exposed inner- electrode, no cracks or holes. 4.The outer electrode should have no cracks, holes, damages or surface oxidation. 5.Outer electrode no prolongation or the prolongation is less than half of that of the termination width.3 4 5Dimensions Capacitance Dissipation Factor (DF)Within the specified dimensions Within the specified tolerance Cr 5PF 0.56% 5PF Cr 50PF 1.5 [(150/Cr)+7] 10-4 Cr 50PF 0.15% C C 10nF Ri 10nF Ri 5 1010 Cr 500sUsing micrometer or vernier calipers Measuring Equipments:HP4278 capacitance meter,HP4284 capacitance, Measuring Conditions: 1.Measuring Temperature:25 5 .Humidity: 30% 75%. 2.Measuring Voltage:1.0 0.2V. 3.Measuring Frequency:C<1000PF 1.0 0.1MHz C 1000PF 1.0 0.1KHz Measuring Equipment:Insulation resistance meter (such as Sf2511 insulation resistance). Measuring Method:Must measure at rated voltage, and measure the IR within 60 5 seconds. Must measure at 3 times rated voltage, dwell time: 60 1 seconds, no short and the changing/discharging current less than 50mA. First, pre-heat: heat treat 60 5 minutes at 150+0/-10 , then set it for 24 2 hours at room temperature. Measure the capacitance at -55 125 or -55 85 , the capacitance change ratio comparing to that of 25 must be within the specified range. Dip the capacitor into ethanol or colophony solution, and then dip it into 235 5 ( or 245 5 leadless eutedtic solder solution ) eutectic solder solution hanving lead for 2 0.5 seconds. Dipping speed: 25 2.5mm/second. First pre-heat: heat treat for 60 5 minutes at 150+0/-10 , then set it for 24 2 hours at room temperature. Then pre-heat the capacitance according to the following chart. Dip the capacitor into 265 5 eutectic solder solution for 10 1 seconds. Then set it for 24 2 hours at room temperature, then measure. Dipping speed: 25 2.5mm/second. Preheat conditions: Stage 1 2 Temperature 100 170 120 200 Time 1minute 1minute6Insulation Resistance7Withstanding Voltage Capacitance Temperature Characteristic>3x rated continuous working voltage Must meet the capacitor character temperature coefficient requirements within the operating temperature range. Tin coverage should be 75% of the outer electrode Appearance Cap. Change ratio DF No defects visible 5%or 0.5PF (whichever is larger)89SolderabilityResistance to Soldering10Same as original spec Same as original specIR46【南京南山半导体有限公司 — 贴片电容选型资料】MULTILAYER CHIP CERAMIC CAPACITOR1 10N11 10N,10 1 :1.0mm/ 11.5mm 10 D.F. 12 55Hz 210 55Hz 10Hz 6 123 420 mm mmmm13mmmmmmmm150+0/-10 14 24 2 24 260 547【南京南山半导体有限公司 — 贴片电容选型资料】NumberItems Adhesive Strength of TerminationStandard No removal of the terminations or other defect shall occurTest Method Solder the capacitor to the test jig (glass epoxy resin board) shown in Fig.1 using a eutectic solder.Then apply a 10N force inthe direction shown as the arrowhead.The aoldering shall be done either with an iron or using the reflow method and shall be conducted with care so that an iron or using the refow method and shall be conducted with care so that the soldering is uniform and free of defects such as heat shock,etc. 10N,10 1s Speed:1.0mm/s Glss epoxy resinboard11Fig.1 Vibration Resistance Appearance Capacitance No defects or abnormities Within the specified tolerance range Same as original spec12DFSolder the capacitor to the test jig (glass epoxy resin board). The capacitor should be subjected to a simple harmonic motion having a total amplitude of 1.5mm, the frequency being varied uniformly between the approximate limits of 10 and 55Hz, shall be traversed (from 10 Hz to 55 Hz then 10 Hz again) in approximately 1 minute.This motion shall be applied for a period of 2 hours in each 3 mutually perpendicular directions (total is 6 hours).Same i standarFif.2 Bending Resistance No cracks or other defects shall occur Solder the capacitor to the test jig (glass epoxy resin board) shown in Fig.3 using a eutectic solder. Then apply a 10N force in the direction shown as Fig.4. The soldering shall be done either with an iron or using the reflow method and shall be conducted with care so that the soldering is uniform and free of defects such as mm heat shock, etc.mm13mm mm mm14Temperature CycleAppearance No defects or abnormitiesPre-treatment: Heat-treat the capacitor for 60 5minutes at 150+0/-10 , then set it for 24 2 hours at room temperature. Perform five cycles according to the four heat treatments listed in the following table. Set it for 24 2 hours at room temperature, then measure.48mm【南京南山半导体有限公司 — 贴片电容选型资料】MULTILAYER CHIP CERAMIC CAPACITOR2.5% 0.25PF, 1 10000M 2 3 4 2 3 30 3 2 3 30 3 2 314D.F. I.R.40 290 95 24 2500+24/-05% 0.5PF, 15 ( ) D.F. I.R. 10000M40 2 500+24/-0 5% 0.5PF, 16 D.F. I.R. 10000M90 95 24 22 50mA 5% 0.5PF, 17 D.F. I.R. 10000M1000 12 24 249【南京南山半导体有限公司 — 贴片电容选型资料】NumberItem Temperature CycleStandard Cap. Change ratio D.F. I.R. 2.5% or 0.25 PF (whichever is larger) Same as original spec More than 10000M Heat-treatment:Test Method14stage temperature 1 lowest opeating temperature 3 2 normal temperature 3 high operating temperature 2 4 normal temperaturetime min. 30 3 2 3 30 3 2 3Humidity Steady StateAppearance Cap. Change ratio D.F. I.R.No defects or abnormities 5% or 0.5 PF (whichever is larger) Same as original spec More than 10000MSet the capacitor for 500+24/-0 hours at the condition of 40 2 and 90-95% humidity. Then remove and set it for 24 2 hours at room temperature, then measure.15Humidity LoadAppearance Cap. Change ratioNo defects or abnormities 5% or 0.5 PF (whichever is larger) Same as original spec More than 10000MApply rated voltage to the capacitor for 500+24/-0 hours at the condition of 40 2 and 90-95% humidity. Remove and set it for 24 2 hours at room temperature, then measure.16D.F. I.R.Life TestAppearance Cap. Change ratioNo defects or abnormities 5% or 0.5 PF (whichever is larger) Same as original spec More than 10000MApply two times rated voltage to the capacitor for 1000 12 hours at the upper temperature limits, the charging current should be less than 50mA. Remove and set it for 24 2 hours at room temperature, then measure.17D.F. I.R.5057-10%-5%0%5%10%COG 50VX7R 50V Z5U 50V Y5V50V010********-100%-80%-60%-40%-20%0%20%40%[Vdc]COG :1MHZ X7R,Z5U,Y5V:1KHZZ5U 50VY5V 50V X7R 50VC0G 50V0123-20%0%+20%+40%+60%^+80%COG PH RH SH TH UHCOG X7R Y5V,Z5U05010010001000010%0%-10%-20%-30%-40%[Hr]X7R20%0%[Vr ms ]COG :1MHZ X7R,Z5U,Y5V:1KHZMULTILAYER CHIP CERAMIC CAPACITOR58-5%0%5%10%-100%-80%-60%-40%-20%0%20%40%Z5U 50VY5V 50V X7R 50VC0G 50V0123-20%0%+20%+40%+60%^+80%COG X7R Y5V,Z5U05010010001000010%0%-10%-20%-30%-40%0%GENEREL-USE MLCC CHARCCTER PROFILESCapacitance change ratio DC Voltage[Vdc]Measuring condition COG :1MHzX7R,Z5U,Y5V:1KHzCOG and PHRH SH TH UH siriestemperature coefficentDC Capacitance-AC VoltageCharactericsCapacitance change_agingTime[Hr]X7R tempreture characteristicsZ5U [Vr ms ]Capacitance change ratioCapacitance change ratio Capacitance change ratio Capacitance change ratio。

TVS二极管选型

TVS二极管选型优恩半导体（UN）在选用TVS二极管时，必须考虑电路的具体条件，一般应遵循以下原则：一、大箝位电压VC（MAX）不大于电路的最大允许安全电压。

二、最大反向工作电压（变位电压）VRWM不低于电路的最大工作电压，一般可以选VRWM等于或略高于电路最大工作电压。

三、额定的最大脉冲功率，必须大于电路中出现的最大瞬态浪涌功率。

下面是TVS在电路应用中的典型例子：TVS用于交流电路：见图2-1，这是一个双向TVS在交流电路中的应用，可以有效地抑制电网带来的过载脉冲，从而起到保护整流桥及负载中所有元器件的作用。

TVS的箝位电压不大于电路的最大允许电压。

图2-2所示，是用单向TVS并联于整流管旁侧，以保护整流管不被瞬时脉冲击穿，选用TVS必须是和整流管相匹配。

图2-3所示电路中，单向TVS1和TVS2反接并联于电源变压器输出端或选用一个双向TVS，用以保护整流电路及负载中的元器件。

TVS3保护整流以后的线路元件，如电源变压器输出端电压为36伏时一般TVS1和TVS2的工作电压VR应根据36×来选择，其它参数依据电路中的具体条件而下。

TVS用于直流电路:图2-4所示TVS并联于输出端，可有效地保护控制系统。

TVS的反向工作电压应等于或略高于直流供电电压，其它参数根据电路的具体条件而定。

图2-5所示为两个单向TVS连接在电源线路中，用以防止直流电源反接或电源通、断时产生的瞬时脉冲使集成电路损坏。

当电路连接有感性负载，如电机、断电器线圈、螺线管时，会产生很高的瞬时脉冲电压。

图2-6中的TVS可以保护晶体管及逻辑电路，从而省去了较复杂的电阻/电容保护网络。

图2-7电路中TVS起保护和电压限制的作用。

直流电中选用举例：整机直流工作电压12V，最大允许安全电压25V（峰值），浪涌源的阻抗50MΩ，其干扰波形为方波，TP=1MS，最大峰值电流50A。

选择：1、先从工作电压12V选取最大反向工作电压VRWM为13V，则击穿电压V（BR）==15.3V；2、从击穿电压值选取最大箝位电压VC（MAX）=1.30×V(BR)=19.89V，取VC=20V；3、再从箝位电压VC和最在峰值电流IP计算出方波脉冲功率：PPR=VC×IP=20×50=1000W4、计算折合为TP=1MS指数波的峰值功率，折合系数K1=1.4，PPR=1000W÷1.4=715W从手册中可查到1.5KE15A其中PPR=1500W，关断电压VRWM=12.8V，击穿电压V（BR）=14.3～15.8V，最大箝位电压VC=21.2V，最大浪涌电流IP=1500/21.2＝70.7A。

TVS的选用

TVS的特性及应用2004-12-13 作者：huanghm瞬态电压抑制器（Transient V oltage Suppressor）简称TVS，是一种二极管形式的高效能保护器件。

当TVS二极管的两极受到反向瞬态高能量冲击时，它能以10-12秒量级的速度，将其两极间的高阻抗变为低阻抗，吸收高达数千瓦的浪涌功率，使两极间的电压箝位于一个预定值，有效地保护电子线路中的精密元器件，免受各种浪涌脉冲的损坏。

由于它具有响应时间快、瞬态功率大、漏电流低、击穿电压偏差小、箝位电压较易控制、无损坏极限、体积小等优点。

目前已广泛应用于计算机系统、通讯设备、交/直流电源、汽车、电子镇流器、家用电器、仪器仪表（电度表）、RS232/422/423/485、I/O、LAN、ISDN、ADSL、USB、MP3、PDAS、GPS、CDMA、GSM、数字照相机的保护、共模/差模保护、RF耦合/IC驱动接收保护、电机电磁波干扰抑制、声频/视频输入、传感器/变速器、工控回路、继电器、接触器噪音的抑制等各个领域。

具体有以下三大特点：1、将TVS二极管加在信号及电源线上，能防止微处理器或单片机因瞬间的肪冲，如静电放电效应、交流电源之浪涌及开关电源的噪音所导致的失灵。

2、静电放电效应能释放超过10000V、60A以上的脉冲，并能持续10ms；而一般的TTL器件，遇到超过30ms的10V脉冲时，便会导至损坏。

利用TVS二极管，可有效吸收会造成器件损坏的脉冲，并能消除由总线之间开关所引起的干扰（Crosstalk）。

3、将TVS二极管放置在信号线及接地间，能避免数据及控制总线受到不必要的噪音影响。

一、TVS的特性及主要参数1、TVS的特性曲线TVS的电路符号与普通稳压二极管相同。

它的正向特性与普通二极管相同；反向特性为典型的PN结雪崩器件。

在瞬态峰值脉冲电流作用下，流过TVS的电流，由原来的反向漏电流ID上升到IR时，其两极呈现的电压由额定反向关断电压VWM上升到击穿电压VBR，TVS被击穿。

广州金升阳科技有限公司 LS05-13BxxR3 系列 5W 二极管电源模块说明书

5W，DIY型AC-DC 模块电源CB RoHS产品特点●超宽输入电压范围：85-305VAC/70-430VDC ●交直流两用（同一端子输入电压）●工作温度范围：-40℃to +85℃●百搭应用、布局灵活●超小体积、高功率密度、绿色环保●寿命可控、成本可调●空载功耗0.1W ●输出短路、过流保护●符合IEC/EN61558、IEC/EN60335标准●通过IEC/EN/UL62368认证LS05-13BxxR3系列-----是金升阳为客户提供的小型化裸板的高效绿色模块电源，该型号电源具有交直流两用、输入电压范围宽、高可靠性、低功耗、安全隔离等优点。

广泛适用于工控和电力仪器仪表、智能家居等对体积要求苛刻、并对EMC 要求不高的场合，如果需要应用于电磁兼容恶劣的环境下必须添加EMC 外围电路。

输入特性项目工作条件Min.Typ.Max.单位输入电压范围交流输入85--305VAC 直流输入70--430VDC 输入频率47--63Hz输入电流115V AC ----0.2A230V AC ----0.1冲击电流115V AC --20--230V AC--40--外接保险丝推荐值推荐1A ，慢断型，必接（实际使用时需根据应用环境选择）热插拔不支持输出特性项目工作条件Min.Typ.Max.单位输出电压精度10%-100%负载--±5--%线性调节率额定负载--±1.5--负载调节率10%-100%负载--±3--纹波噪声*20MHz 带宽（峰-峰值），10%-100%负载--80150mV 温度漂移系数--±0.15--%/℃待机功耗230V AC--0.100.15W短路保护打嗝式，可长期短路，自恢复选型表认证产品型号输出功率标称输出电压及电流(Vo/Io)效率(230VAC,%/Typ.)最大容性负载(uF)CE/UL/CBLS05-13B03R3 3.3W3.3V/1000mA 692200LS05-13B05R35W5V/1000mA 761500LS05-13B09R39V/560mA 77680LS05-13B12R312V/420mA 79470LS05-13B15R315V/340mA 79330LS05-13B24R324V/210mA81100注：1.标称输出电压指经外围后加到负载端电压；2.若产品使用在剧烈振动环境下，需点胶固定其本体。

TVS管-3KP 系列规格书

pdoeci0natyws thoer5e0t%he0opfeIapkpcurrent
0.2 100
Half 0V.a5lue = Ipp76 1 2 50
1.5 33 21as0/d1e0f0in0e2dμ3sbeyc.RW.Ea.vAe.form
10000 100
7 440 30000 1000
(3)VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V
Unit W A W A
V °C

P. 1
3KP Series
Peak Pulse Derating in Percentage of Peak Power or Current, (%)
5
5000 5000 2000 1000 250 150
50 20 15 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2
5
326.09
9.2
6
291.26
10.3
7
267.86
11.2
7
250.00
12.0
8
232.56
12.9
8
220.59
13.6
9
208.33
14.4
9
194.81
15.4
10
176.47
17.0
11
164.84
18.2
12
150.75
19.9
13
139.53
21.5
14

TVS二极管选型指南

TVS二极管选型指南一、选用指南1、首先确定被保护电路的最大直流或连续工作电压，电路的额定标准电压和“高端”容限。

2、TVS的额定反向关断电压V应大于或等于被保护电路的最大工作电压，WM太低，器件有可能进入雪崩状态或因反向漏电流太大影响电路的正若选用的VWM常工作。

应小于被保护电路的损坏电压。

3、TVS的最大箝位电压VC4、TVS的最大峰值脉冲功率PW必须大于被保护电路内可能出现的峰值脉冲功率。

5、在确定了TVS的最大箝位电压后，其峰值脉冲电流应大于瞬态浪涌电流。

6、对于数据接口电路的保护，必须注意选取尽可能小的电容值C的TVS器件。

7、带A的TVS二极管比不带A的TVS二极管的离散性要好，在TVS二极管A前面加C的型号表示双向TVS二极管。

8、直流保护一般选用单向TVS二极管，交流保护一般选用双向TVS二极管，多路保护选用TVS阵列器件，大功率保护选用TVS专用保护模块。

特殊情况，如：RS-485和RS-232保护可选用双向TVS二极管或TVS阵列。

9、TVS二极管可以在-55℃到+150℃之间工作，如果需要TVS在一个变化的温度下工作，由于其反向漏电流ID是随温度的增加而增大；功耗随TVS结温度增加而下降，故在选用TVS时应考虑温度变化对其特性的影响。

10、TVS二极管可以串/并应用，串行连接分电压，并行连接分电流。

但考虑到TVS的离散性，使用时应尽可能的减少串/并数量。

二、注解—是TVS最大连续工作的直流或脉冲电压，当这个反向电压加于TVS 1、VWM两极时，它处于反向关断状态，流过它的电流小于或等于其最大反向漏电流I。

D2、V—是TVS最小的雪崩电压。

25℃时，在这个电压之前，保护TVS是BR不导通的。

当TVS 流过规定的1mA电流I时，加于TVS两极间的电压为其最R小击穿电压VBR。

3、IT—--测试电流。

4、ID—--反向漏电流。

5、VC —当持续时间为20us的脉冲峰值电流IPP流过TVS时，其两极间出现的最大峰值电压为VC。

士兰微 SBD20C150T F S 说明书

1. 增加友谊薄框架 TO-220-3L 和 TO-220F-3L 封装版本： 1.0 修改记录：
1. 原版
作者：殷资作者：张科锋作者：张科锋作者：张科锋
杭州士兰微电子股份有限公司
http: //
版本号：2.0 共6页第6页
额定值 2.0
包装料管料管料管料管编带
单位 V A A C C
单位 C/W
杭州士兰微电子股份有限公司
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版本号：2.1 共6页第1页
电参数规格
参数名称正向压降反向漏电流
典型特性曲线
SBD20C150T/F/S 说明书
符号 VF IR
测试条件 IF=10A，TC=25C IF=10A，TC=125C VR=150V，TC =25C VR=150V，TC =125C
单位: mm
杭州士兰微电子股份有限公司
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SBD20C150T/F/S 说明书
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版本： 2.1 修改记录：
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1. 修改典型特性曲线 2. 修改 TO-263-2L 封装外形图版本： 1.8 修改记录： 1. 修改 TO-220HW-3L 封装信息 2. 修改 TO-220-3L 封装信息版本： 1.7 修改记录： 1. 修改 TO-220F-3L 封装信息 2. 增加 TO-220HW-3L 封装 3. 增加 TO-263-2L 封装版本： 1.6 修改记录： 1. 修改产品规格分类版本： 1.5 修改记录： 1. 修改图 4 版本： 1.4 修改记录： 1. 增加“正向平均整流电流”曲线版本： 1.3 修改记录： 1. 修改“封装外形图”

TVS的选用

TVS的特性及应用2004-12-13 作者：huanghm瞬态电压抑制器（Transient V oltage Suppressor）简称TVS，是一种二极管形式的高效能保护器件。

由于它具有响应时间快、瞬态功率大、漏电流低、击穿电压偏差小、箝位电压较易控制、无损坏极限、体积小等优点。

2、静电放电效应能释放超过10000V、60A以上的脉冲，并能持续10ms；而一般的TTL器件，遇到超过30ms的10V脉冲时，便会导至损坏。

利用TVS二极管，可有效吸收会造成器件损坏的脉冲，并能消除由总线之间开关所引起的干扰（Crosstalk）。

3、将TVS二极管放置在信号线及接地间，能避免数据及控制总线受到不必要的噪音影响。

一、TVS的特性及主要参数1、TVS的特性曲线TVS的电路符号与普通稳压二极管相同。

它的正向特性与普通二极管相同；反向特性为典型的PN结雪崩器件。

TVS管-5.0SMDJ系列规格书

Breakdown Voltage VBR @ Reverse
IT
Leakage IR
@VRWM
Min (V) Max (V) IT (mA) (uA)
5.0SMDJ11 5.0SMDJ11C
5PDW 5BDW 12.20 14.90
10
Hale Waihona Puke 8005.0SMDJ11A 5.0SMDJ11CA 5PDX 5BDX 12.20 13.50
1
100
5.0SMDJ16 5.0SMDJ16C
5PEL 5BEL 17.80 21.80
1
50
5.0SMDJ16A 5.0SMDJ16CA 5PEM 5BEM 17.80 19.70
1
50
5.0SMDJ17 5.0SMDJ17C
5PEN 5BEN 18.90 23.10
1
20
5.0SMDJ17A 5.0SMDJ17CA 5PEP 5BEP 18.90 20.90
1
5
5.0SMDJ28 5.0SMDJ28C
5PFF 5BFF 31.10 38.00
1
5
5.0SMDJ28A 5.0SMDJ28CA 5PFG 5BFG 31.10 34.40
1
5
5.0SMDJ30 5.0SMDJ30C
5PFH 5BFH 33.30 40.70
1
5
5.0SMDJ30A 5.0SMDJ30CA 5PFK 5BFK 33.30 36.80
except Bipolar ● Mounting position: Any
SMC/ DO-214AB
Maximum Ratings(TA=25℃ unless otherwise noted)

TVS瞬态抑制二极管选型规格书

0.030(0.75) vices are ideal for the protection of I/O interfaces, VCC bus and other vulnerable circuits used in telecom,computer, industrial and consumer electronic applications.
Maximum Instantaneous Forward Voltage at 25A for
Unidirectional only (Note 4)
VF
2 20 3.5V/6.5
Watts Amps
V
Operating junction and Storage Temperature Range.
Reverse StandOff Voltage
Breakdown Voltage@IT
VRWM(V)
3.0 5.0 6.0 6.5 7.0 7.5 8.0 8.5 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 33.0 36.0 40.0 43.0 45.0 48.0 51.0 54.0 58.0 60.0 64.0 70.0 75.0 78.0 85.0 90.0 100.0 110.0 120.0 130.0 150.0 160.0 170.0
Figure 1 - Peak Pulse Power Rating Curve
Figure 2 - Pulse Derating Curve
PPPM - Peak Pulse Power (kW) PPPM-Peak Pulse Power (kW)

SMC-3选型手册

75
60 100 1 00 240V AC, 50/60 Hz
24V AC/DC♣
67 201
95 110
75 150
100 240V AC, 50/60 Hz 24V AC/DC♣
84 251
95 132
100 200 100 240V AC, 50/60 Hz 24V AC/DC♣
106 317
...............................62 ..............................64 (SMC-3 SMC-Delta)...........................65
15% 25% 35% 65% 2 5 10 15 20 25 30s
150 250 350 450
100…240V AC, 50/60 Hz 24V AC/DC♣
100…240V AC, 50/60 Hz 24V AC/DC♣
-
Cat. No. 150-C3NBD 150-C3NBR 150-C9NBD 150-C9NBR 150-C16NBD 150-C16NBR 150-C19NBD 150-C19NBR 150-C25NBD 150-C25NBR 150-C30NBD 150-C30NBR 150-C37NBD 150-C37NBR 150-C43NBD 150-C43NBR 150-C60NBD 150-C60NBR 150-C85NBD 150-C85NBR 150-C108NBD 150-C108NBR 150-C135NBD 150-C135NBR 150-C201NBD 150-C201NBR 150-C251NBD 150-C251NBR 150-C317NBD 150-C317NBR 150-C361NBD 150-C361NBR 150-C480NBD 150-C480NBR

SMC磁性开关选型手册

SMC磁性开关选型手册
产品名称:SMC磁性开关选型手册
日本SMC磁性开关干簧管又叫磁控管，它同霍尔元件差不多，但原理性质不同，是利用磁场信号来控制的一种开关元件，无磁断开，可以用来检测电路或机械运动的状态，另一种磁性开关就是市场上所说接近开关、门磁开关、又叫感应开关，它是有干一个开好模具并且是标准尺寸塑胶外壳，将干簧管灌封在黑色外壳里面导线引出来另一半带有磁铁的塑料外壳固定在另一端当这个磁铁靠近带有导线的开关时，发出开关信号！一般信号距离为10mm接通，此产品广泛引用到防盗门、家用门、打印机、传真机、电话机、等电子仪器设备上面。

还有一种磁性开关是在密闭的金属或塑料管内，设置一点或多点的磁簧开关，然后将管子贯穿一个或多个，中空而内部装有环型磁铁的浮球，并利用固定环，控制浮球与磁簧开关在相关位置上，使浮球在一定范围内上下浮动。

利用浮球内的磁铁去吸引磁簧开关的接点,产生开与关的动作。

SMCJ瞬态抑制二极管选型手册(规格书)

IR(ȝA) 800 800 500 200 100 50 20 10
5 1 1 1 1 1 1 1 1 1
Revision:15-Dec-11
【领先的片式无源器件整合供应商 — 南京南山半导体有限公司】

ELECTRICAL CHARACTERISTICS
SMCJ SERIES
Part Number
Device Marking
Code
Reverse Stand-Off Voltage
Breakdown Voltage NIN.@IT
Breakdown Voltage MAX.@IT
Test Current
Maximum Clamping Voltage @IPP
Peak Pulse Current
VRWM(V) 5.0 6.0 6.5 7.0 7.5 8.0 8.5 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.40 6.67 7.22 7.78 8.33 8.89 9.44 10.00 11.10 12.20 13.30 14.40 15.60 16.70 17.80 18.90 20.00 22.20
DEVICES FOR BIPOLAR APPLICATION
For bidirectional use C or CA suffix for types SMCJ5.0 thru types SMCJ440 (e.g.SMCJ5.0CA, SMCJ440CA), electrical characteristics apply in both directions.
Peak Pulse Current
Reverse Leakage @VRWM

贴片封装TVS二极管1.5SMC36CA说明

贴片封装TVS二极管1.5SMC36CA说明硕凯电子（Sylvia）一、TVS二极管TVS二极管的电气特性是由P-N结面积、掺杂浓度及晶片阻质决定的。

其耐突波电流的能力与其P-N结面积成正比。

TVS广泛应用于半导体及敏感器件的保护，通常用于二级电源和信号电路的保护，以及防静电等。

其特点为反应速度快(为ps级)，体积小，脉冲功率较大，箝位电压低等。

其10/1000μs波脉冲功率从400W～30KW，脉冲峰值电流从0.52A～544A；击穿电压有从6.8V～550V的系列值，便于各种不同电压的电路使用。

二、环境说明三、产品图四、产品应用TVS器件非常适合保护I/O接口，Vcc总线和其他应用于电信、计算机、工业和消费电子应用的易损电路。

五、UL证书档案号六、产品特性1、为表面安装应用优化电路板空间2、低泄漏3、单向和双向单元4、玻璃钝化结5、低电感6、优良的钳位能力7、1500W的峰值功率能力在10×1000μ波形重复率（占空比）：0.01%8、快速响应时间：从0伏特到最小击穿电压通常小于1.0ps9、典型的，在电压高于12V时，反向漏电流小于5μA10、高温焊接：终端260°C/40秒11、典型的最大温度系数△Vbr=0.1%x Vbr@25°C x△T12、塑料包装有保险商实验室可燃性94V-013、无铅镀雾锡14、无卤化，符合RoHS15、典型失效模式是在指定的电压或电流下出现16、晶须测试是基于JEDEC JESD201A每个表4a及4c进行的17、IEC-61000-4-2ESD15kV(空气)，8kV(接触)18、数据线的ESD保护符合IEC61000-4-2(IEC801-2)19、数据线的EFT保护符合IEC61000-4-4(IEC801-4)七、峰值脉冲功率额定曲线八、双向I-V特性曲线九、编带说明十、最大额定值Notes:1.Non-repetitive current pulse,per Fig.3and derated above TA=25°C per Fig.2.2.Mounted on5.0mm x5.0mm(0.03mm thick)Copper Pads to each terminal.3.8.3ms single half sine-wave,or equivalent square wave,Duty cycle=4pulses per minutes maximum.4.VF<3.5V for VBR<200V and VF<6.5V for VBR>201V.。

TVS管选型指导

TVS管选型指导TVS管选型指导1.1TVS瞬态电压抑制⼆极管原理应⽤特性TVS—瞬态电压抑制器的简称，英⽂全称Transient Voltage Suppressor Diode。

TV是⼀种⼆极管形式的限压型过压保护器件。

当TVS的两极受到反向瞬态⾼能量冲击时，它能以10-12秒量级的速度将其两极间的⾼阻抗变为低阻抗，吸收⾼达数千⽡的浪涌功率，使两极间的电压箝位于⼀个预定值，有效地保护电⼦线路中的精密元器件免受浪涌脉冲的损坏。

它的特点响应速度快(1ps)、瞬态功率⼤、漏电流低、击穿电压偏差⼩(5%)、箝位能⼒强等。

耐浪涌抑制电压能⼒特强，其脉冲功率从⼏百⽡—⼏⼗千⽡，脉冲峰值电流从⼏安—⼏百安。

常⽤的TVS管的击穿电压有从5V—550V 的系列值，耐受能⼒⽤⽡特(W)表⽰。

⽬前已⼴泛应⽤于计算机系统、通讯设备、交/直流电源、汽车、电⼦镇流器、家⽤电器、仪器仪表（电度表）、RS232/422/423/485、 I/O、LAN、ISDN 、ADSL、USB、MP3、PDAS、GPS、CDMA、GSM、数字照相机的保护、共模/差模保护、RF耦合/IC驱动接收保护、电机电磁波⼲扰抑制、声频/视频输⼊、传感器/变速器、⼯控回路、继电器、接触器噪⾳的抑制等各个领域。

TVS⼆极管的分类●按极性：可分为单极性和双极性两种●按⽤途：可分为各种电路都适⽤的通⽤型器件和特殊电路适⽤的专⽤型器件。

如：各种交流电压保护器、 4~200mA电流环保器、数据线保护器、同轴电缆保护器、电话机保护器等●按封装及内部结构：可分为轴向引线⼆极管、双列直插TVS阵列（适⽤多线保护）、贴⽚式、组件式和⼤功率模块式等TVS的使⽤TVS TVS对受保护器件呈⾼阻抗状态，不影响线路的正常⼯作，当有异常的过电压脉冲超过其击穿电压时，TVS由⾼阻状态变为低阻状态，提供的⼀个低阻抗路径使流向被保护元器件的瞬间电流转⽽分流到TVS⼆极管，瞬间的浪涌电流经TVS管泄放掉，同时把电压精确的限制到⼀个安全的⽔平，当异常过电压消失后，TVS⽴即恢复到⾼阻状态。

TVS二极管-SM8S系列规格书

Steady State Power Dissipation, (W)
SM8S Series
Ratings and Characteristics Curves (TA=25℃ unless otherwise noted)
1A00MBIENATVTEERMAPGEERFAOTRUWREAR, (D℃C)URRENT, (A)
Maximum Reverse Surge Current IPP (A) (1)
SM8S10A 11.1
12.3
5.0
15
250
SM8S11A 12.2
13.5
5.0
10
150
SM8S12A 13.3
14.7
5.0
10
150
SM8S13A 14.4
15.9
5.0
10
150
SM8S14A 15.6
17.2
Breakdown Voltage VBR @IT Min (V) Max (V) IT (mA)
Maximum Reverse Leakage IR @VRWM (uA)
Maximum IR @VRWM TJ=175 (uA)
Working Peak Reverse
Voltage VRWM (V)
5.0
10
150
SM8S15A 16.7
18.5
5.0
10
150
SM8S16A 17.8
19.7
5.0
10
150
SM8S17A 18.9
20.9
5.0
10
150
SM8S18A 20.0
22.1
5.0
10

TVS二极管1.5SMC-1500W系列规格书 JKSEMI

DESCRIPTION:TVS diodes can be used in a wide range of applications which like consumer electronic products,automotive industries,munitions,telecommunications,aerospace industries,and intelligent control systems.FEATURES:✧Glass passivated or planar junction.✧Excellent clamping capability.✧Repetition rate (duty cycle):0.01%.✧Typical I R less than 1μA above 10V.✧Low profile package and low inductance.✧1500W Peak Pulse power capability at 10×1000μs waveform.✧Fast response time:typically less than 1.0ps from 0V to V BR min.✧High temperature soldering:260℃/10s at terminals.✧Plastic package has Underwriters Laboratory Flammability 94V-0.✧For surface mounted applications in order to optimize board space.ABSOLUTE MAXIMUM RATINGS (T A =25ºC,RH=45%-75%,unless otherwise noted)ParameterSymbol Value Unit Storage temperature rangeT stg -55to +150℃Operating junction temperature range T j -55to +150℃Steady state power dissipation at T L =75℃P M(AV)8.0W Peak pulse power dissipation on 10/1000μs waveformP PP 1500W Maximum Instantaneous Forward Voltage at 60A for UnidirectionalV F5.0VMARKING6V8A :Device Marking Code 1409:In ninth week,20146V8A1409SMCCHARACTERISTICS(T A=25℃) Part Number Marking V R I R@V R V BR@I T I TV C@I PPI PP①Uni-polar Bi-polar Uni Bi(V)μA min(V)max(V)mA V A 1.5SMC6.8A 1.5SMC6.8CA6V8A6V8C 5.8150 6.457.141010.5144.8 1.5SMC7.5A 1.5SMC7.5CA7V5A7V5C 6.41007.137.881011.3132.8 1.5SMC8.2A 1.5SMC8.2CA8V2A8V2C7.02507.798.611012.1124.0 1.5SMC9.1A 1.5SMC9.1CA9V1A9V1C7.78208.659.55113.4112.0 1.5SMC10A 1.5SMC10CA10A10C8.55109.5010.50114.5103.5 1.5SMC11A 1.5SMC11CA11A11C9.4510.5011.60115.696.2 1.5SMC12A 1.5SMC12CA12A12C10.2211.4012.60116.789.8 1.5SMC13A 1.5SMC13CA13A13C11.1112.4013.70118.282.5 1.5SMC15A 1.5SMC15CA15A15C12.8114.3015.80121.270.8 1.5SMC16A 1.5SMC16CA16A16C13.6115.2016.80122.566.7 1.5SMC18A 1.5SMC18CA18A18C15.3117.1018.90125.259.6 1.5SMC20A 1.5SMC20CA20A20C17.1119.0021.00127.754.2 1.5SMC22A 1.5SMC22CA22A22C18.8120.9023.10130.649.1 1.5SMC24A 1.5SMC24CA24A24C20.5122.8025.20133.245.2 1.5SMC27A 1.5SMC27CA27A27C23.1125.7028.40137.540.0 1.5SMC30A 1.5SMC30CA30A30C25.6128.5031.50141.436.3 1.5SMC33A 1.5SMC33CA33A33C28.2131.4034.70145.732.9 1.5SMC36A 1.5SMC36CA36A36C30.8134.2037.80149.930.1 1.5SMC39A 1.5SMC39CA39A39C33.3137.1041.00153.927.9 1.5SMC43A 1.5SMC43CA43A43C36.8140.9045.20159.325.3 1.5SMC47A 1.5SMC47CA47A47C40.2144.7049.40164.823.2 1.5SMC51A 1.5SMC51CA51A51C43.6148.5053.60170.121.4 1.5SMC56A 1.5SMC56CA56A56C47.8153.2058.80177.019.5 1.5SMC62A 1.5SMC62CA62A62C53.0158.9065.10185.017.7 1.5SMC68A 1.5SMC68CA68A68C58.1164.6071.40192.016.4 1.5SMC75A 1.5SMC75CA75A75C64.1171.3078.801103.014.6 1.5SMC82A 1.5SMC82CA82A82C70.1177.9086.101113.013.3 1.5SMC91A 1.5SMC91CA91A91C77.8186.5095.501125.012.0 1.5SMC100A 1.5SMC100CA100A100C85.5195.00105.01137.011.0CHARACTERISTICS (T A =25℃,continued)Part Number Marking V R I R @V R V BR @I T I T V C @I PP I PP ①Uni-PolarBi-PolarUniBiVμAmin(V)max(V)mAVA1.5SMC110A 1.5SMC110CA 110A 110C 94.01105.0116.01152.010.01.5SMC120A 1.5SMC120CA 120A 120C 1021114.0126.01165.09.11.5SMC130A 1.5SMC130CA 130A 130C 1111124.0137.01179.08.41.5SMC150A 1.5SMC150CA 150A 150C 1281143.0158.01207.07.31.5SMC160A 1.5SMC160CA 160A 160C 1361152.0168.01219.0 6.91.5SMC170A 1.5SMC170CA 170A 170C 1451162.0179.01234.0 6.51.5SMC180A 1.5SMC180CA 180A 180C 1541171.0189.01246.0 6.11.5SMC200A 1.5SMC200CA 200A 200C 1711190.0210.01274.05.51.5SMC220A 1.5SMC220CA 220A 220C 1851209.0231.01328.0 4.61.5SMC250A 1.5SMC250CA 250A 250C 2141237.0263.01344.0 4.41.5SMC300A 1.5SMC300CA 300A 300C 2561285.0315.01414.0 3.71.5SMC350A 1.5SMC350CA 350A 350C 3001332.0368.01482.0 3.21.5SMC400A 1.5SMC400CA 400A 400C 3421380.0420.01548.0 2.81.5SMC440A 1.5SMC440CA440A440C3761418.0462.01602.02.5①Surgewaveform:10/1000μsV R ：Stand-off Voltage --Maximum voltage that can be applied V BR ：Breakdown VoltageV C ：Clamping Voltage --Peak voltage measured across the suppressor at a specified Ipp I R ：Reverse Leakage Current100kINFORMATIONAND V‐I CHARACTERISTICS CURVES(T A=25ºC,unless otherwise noted)FIG.1:V-I curve characteristics(Uni-directional)FIG.2:V-I curve characteristicsFIG.3:Pulse waveform PPM RSMFIG.4:Pulse derating curveV BR VoltageC:Bi-directionalA5%V BR Voltage toleranceCxx1.5SMC 1500W SMC SeriesPeaPARAMETERS Reflow Condition Pb-Free assembly (see FIG.5)Pre Heat -Temperature Min(T s(min))+150℃-Temperature Max(T s(max))+200℃-Time(Min to Max)(ts)60-180secs.Average ramp up rate(Liquid us Temp(T L)to peak)3℃/sec.Max T s(max)to T L-Ramp-up Rate3℃/sec.MaxReflow -Temperature(T L)(Liquid us)+217℃-Temperature(t L)60-150secs.Peak Temp(T p)+260(+0/-5)℃Time within5℃of actual Peak Temp(t p)30secs.Max Ramp-down Rate6℃/sec.Max x Time25℃to Peak Temp(T P)8min.Max Do not exceed+260℃MECHANICAL DATADO-214AB(SMC)PreheatRamp-upRef.Dimensions Millimeters Inches Min.Max.Min.Max.A 6.607.110.2600.280B 5.59 6.200.2200.244C 2.75 3.200.1080.126 D0.76 1.520.0300.060 E7.748.130.3050.320 F0.0510.2030.0020.008 G0.150.310.0060.012 H 2.15 2.620.0850.103 J8.120.320K 4.690.185 L 3.070.121Website:For additional information,please contact your local SalesRepresentative.©Copyright 2016,jksemiis a registered trademark of jksemi All rights arereservedAND PART No.PACKAGE QUANTITYTAPE &REEL1.5SMCxxCA/ASMC(DO214AB)3,00013inch。