金线拉力和剪切力测试资料Wire Pull and Ball Shear
IC 芯片封装流程
FOL– Wire Bonding 引线焊接
陶瓷的Capillary
内穿金线，并且在EFO的 作用下，高温烧球；
金线在Cap施加的一定 压力和超声的作用下， 形成Bond Ball；
金线在Cap施加的一 定压力作用下，形成 Wedge；
FOL– Wire Bonding 引线焊接
※利用高纯度的金线（Au） 、铜线（Cu）或铝线（Al）把 Pad 和 Lead通过焊接的方法连接起来。Pad是芯片上电路的外接 点，Lead是 Lead Frame上的 连接点。 W/B是封装工艺中最为关键的一部工艺。
FOL– Wire Bonding 引线焊接
※利用高纯度的金线（Au） 、铜线（Cu）或铝线（Al）把 Pad 和 Lead通过焊接的方法连接起来。Pad是芯片上电路的外接 点，Lead是 Lead Frame上的 连接点。 W/B是封装工艺中最为关键的一部工艺。
FOL– Wire Bonding 引线焊接
FOL– Die Attach 芯片粘接
Epoxy Write： Coverage >75%;
Die Attach： Placement<0.05mm;
FOL– Epoxy Cure 银浆固化
银浆固化：
175°C，1个小时； N2环境，防止氧化：
Die Attach质量检查： Die Shear（芯片剪切力）
Size
FOL– 3rd Optical Inspection三 光检查
检查Die Attach和Wire Bond之后有无各种废品
EOL– End of Line后段工艺
EOL
Annealing 电镀退火
Trim/Form 切筋/成型
封装工艺流程(1)
焊区与微电子封装的I/O引线或基板上的金属
布线焊区（Pad）用金属细丝连接起来的工
艺技术。
WB技术作用机理
❖
提供能量破坏被焊表面的氧化层和污染物，
使焊区金属产生塑性变形，使得引线与被焊
面紧密接触，达到原子间引力范围并导致界
面间原子扩散而形成焊合点。引线键合键合
❖ 铜：近年来，大量用于集成电路互连。铜比
铝有较高的导电率；铜丝相对于金丝具有成
本低、强度和刚度高、适合于细间距键合的
优点。
❖
引线键合的关键工艺
❖
❖
关键工艺：温度控制、精确定位控制、工作
参数设定。
应用对象：低密度连线封装（＜300个接点）
引线键合的技术缺陷
1.
2.
3.
多根引线并联产生邻近效应，导致电流分布
对芯片的影响，同时还可以屏蔽电磁干扰。
③各向异性导电聚合物:电流只能在一个方向流动。
❖ 导电胶功能：（形成化学结合、具有导电功能）
❖
2.3.4 玻璃胶粘贴法
与导电胶类似，玻璃胶也属于厚膜导体材料（后面
我们将介绍）。不过起粘接作用的是低温玻璃粉。它
是起导电作用的金属粉（Ag、Ag-Pd、Au、Cu等）
出现废品。
Chipping Die
崩边
2.3 芯片粘贴
芯片贴装：也称芯片粘贴，是将芯片固定
于封装基板或引脚架芯片的承载座上的工
艺过程。
贴装方式4种：
❖ 共晶粘贴法（Au-Si合金）
❖ 焊接粘贴法（Pb-Sn合金焊接）
❖ 环氧树脂粘结（重点）
❖ 玻璃胶粘贴法
引线框架
装
架
引线
IC芯片封装流程
并放置进Tube或者Tray盘中；
EOL– Trim&Form切筋成型
Cutting Tool&
1
Forming Punch
Stripper Pad
3
2
Forming Die
EOL/后段 Final Test/测试
FOL– Front of Line前段工艺
Wafer
2nd Optical 第二道光检
Die Attach 芯片粘接
Back Grinding
磨片
Wafer Wash 晶圆清洗
Epoxy Cure 银浆固化
EOL
Wafer Mount 晶圆安装
Wafer Saw 晶圆切割
Size
FOL– 3rd Optical Inspection三 光检查
检查Die Attach和Wire Bond之后有无各种废品
EOL– End of Line后段工艺
EOL
Annealing 电镀退火
Trim/Form 切筋/成型
Molding 注塑
Laser Mark 激光打字
Deflash/ Plating 去溢料/电镀
EOL– Deflash去溢料
Before
After
目的：Deflash的目的在于去除Molding后在管体周围Lead之间 多余OL– Plating电镀
利用金属和化学的方法;在Leadframe的表面 镀上一层镀层;以防止外界环境的影响潮湿 和热 并且使元器件在PCB板上容易焊接及 提高导电性 电镀一般有两种类型：
半导体封装简介
EOL– Molding（注塑）
L/F L/F
Cavity
Molding Tool（模具）
➢EMC（塑封料）为黑色块状，低温存储，使用前需先回温。其特 性为：在高温下先处于熔融状态，然后会逐渐硬化，最终成型。
➢Molding参数：
Molding Temp：175~185°C；Clamp Pressure：3000~4000N； Transfer Pressure：1000~1500Psi；Transfer Time：5~15s； Cure Time：60~120s；
半导体封装简介
一、半导体封装介绍 二、封装主要原材料 三、封装工艺流程—IC芯片 四、封装工艺流程—功率模块
一、半导体封装介绍
1.1 半导体工艺流程
目前半导体材料已经发展到第三代，第一代以硅（Si）为代表材料；第二代以砷化镓（GaAs）为代表材料； 第三代以碳化硅（SiC）和氮化镓（GaN）为主流材料。目前Si仍然是半导体行业使用最多的材料。
二、封装原材料简介 2.1 wafer（晶圆）
【Wafer】晶圆
2.2 【Lead Frame】引线框架
➢提供电路连接和Die的固定作用； ➢主要材料为铜，会在上面进行镀银、NiPdAu等材料； ➢L/F的制程有Etch和Stamp两种； ➢易氧化，存放于氮气柜中，湿度小 于40%RH; ➢除了BGA和CSP外，其他Package都会采用Lead Frame，BGA采用的是Substrate；
➢磨片时，需要在正面（Active Area）贴胶带保护电路区域， 同时 研磨背面。研磨之后，去除胶带，测量厚度；
FOL– Wafer Saw晶圆切割
Wafer Mount 晶圆安装
Wafer Saw 晶圆切割
金球推力国际标准Wire Bond Shear Test
EIA/JEDEC STANDARDWire Bond Shear Test Method EIA/JESD22-B116JULY 1998ELECTRONIC INDUSTRIES ALLIANCENOTICEJEDEC standards and publications contain material that has been prepared, reviewed, and approved through the JEDEC Council level and subsequently reviewed and approved by the EIA General Counsel.JEDEC standards and publications are designed to serve the public interest through eliminating misunderstandings between manufacturers and purchasers, facilitating interchangeability and improvement of products, and assisting the purchaser in selecting and obtaining with minimum delay the proper product for use by those other than JEDEC members, whether the standard is to be used either domestically or internationally.JEDEC standards and publications are adopted without regard to whether or not their adoption may involve patents or articles, materials, or processes. By such action JEDEC does not assume any liability to any patent owner, nor does it assume any obligation whatever to parties adopting the JEDEC standards or publications.The information included in JEDEC standards and publications represents a sound approach to product specification and application, principally from the solid state device manufacturer viewpoint. Within the JEDEC organization there are procedures whereby a JEDEC standard or publication may be further processed and ultimately become an EIA standard.No claims to be in conformance with this standard may be made unless all requirements stated in the standard are met.Inquiries, comments, and suggestions relative to the content of this JEDEC standard or publication should be addressed to JEDEC Solid State Technology Division, 2500 Wilson Boulevard, Arlington, VA 22201-3834, (703)907-7560/7559 or \jedec.Published by©ELECTRONIC INDUSTRIES ALLIANCEEngineering Department2500 Wilson BoulevardArlington, VA 22201-3834"Copyright" does not apply to JEDEC member companies as they arefree to duplicate this document in accordance with the latest revision ofJEDEC Publication 21 "Manual of Organization and Procedure".PRICE: Please refer to the currentCatalog of JEDEC Engineering Standards and Publications or call Global Engineering Documents, USA and Canada (1-800-854-7179), International (303-397-7956)Printed in the U.S.A.All rights reservedJEDEC Standard 22-B116Page 1WIRE BOND SHEAR TEST(From JEDEC Council Ballot JCB-97-64, formulated under the cognizance of the JC-14.1 Subcommittee on Reliability Test Methods for Packaged Devices.)1 ScopeThis test provides a means for determining the strength of the bond between a gold ball bond on a die bonding surface or an aluminum wedge or stitch bond on a package bonding surface, and may be performed on pre-encapsulation or post-encapsulation parts. This measure of bond strength is extremely important in determining two features:1) the integrity of the metallurgical bond which has been formed.2) the quality of gold and aluminum wire bonds to die or package bonding surfaces.These test methods cover ball bonds made with small diameter (from 18 to 76 µm, or from 0.7 to 3 mil) wire and wedge bonds made with larger diameter (minimum of 3 mil) wire, of the type used in integrated circuits and hybrid microelectronic assemblies.These test methods can be used only when the ball height (at least 10.16 µm or 0.4 mil) and diameter for ball bonds, or the wire height (at least 1.25 mils in height at the compressed bonded area) of the wedge bond, are large enough and adjacent interfering structures are far enough away to allow suitable placement and clearance (above the bonding pad or leadframe post and between adjacent bonds) of the shear test chisel. This test method may also apply to gold wedge or stitch bonds if the wire is thick enough to allow shearing of the wire from the bonding surface without smearing similar to a shearing skip.The wire bond shear test is destructive. It is appropriate for use in process development, process control and/or quality assurance.2 Terms and DefinitionsThe terms and definitions shall be in accordance with the following paragraphs.2.1 Ball BondThe adhesion or welding of a thin wire, usually gold, to a die pad metallization, usually an aluminum alloy, using a thermosonic wire bond process. The ball bond includes the enlarged spherical, or nail head, portion of the wire (provided by the flame-off and first bonding operation in the thermal compression and thermosonic process, or both), the underlying bonding pad and the ball bond-bonding pad intermetallic weld interface.2.2 Bonding SurfaceEither 1) the die pad metallization or 2) the package surface metallization to which the wire is ball, wedge or stitch bonded.Test Method B116JEDEC Standard 22-B116Page 22 Terms and Definitions (cont’d)2.3 Bond ShearA process in which an instrument uses a chisel shaped tool to shear or push a ball or wedge bond off the bond pad (see Figure 1). The force required to cause this separation is recorded and is referred to as the bond shear force. The bond shear force of a gold ball bond, when correlated to the diameter of the ball bond, is an indicator of the quality of the metallurgical bond between the gold ball bond and the bond pad metallization. The bond shear force of an aluminum wedge bond, when compared to the manufacturer's tensile strength of the wire, is an indicator of the integrity of the weld between the aluminum wire and the bond pad or package surface metallization.Figure 1 — Bond Shear set-up2.4 Definition of Bond Shear Codes for Ball and Wedge Bonds (see Figure 2)2.4.1 Type 1 - Bond LiftA separation of the entire wire bond from the bonding surface with only an imprint being left on the bonding surface. There is very little evidence of intermetallic formation or welding, or disturbance of the bonding surface metallization.2.4.2 Type 2 - Bond ShearA separation of the wire bond where 1) A thin layer of the bonding surface metallization remains with the wire bond and an impression is left in the bonding surface, or 2) Intermetallics remain on the bonding surface and with the wire bond, or 3) A major portion of the wire bond remains on the bonding surface. Test Method B116JEDEC Standard 22-B116Page 3 2 Terms and Definitions (cont’d)2.4 Definition of Bond Shear Codes for Ball and Wedge Bonds (see Figure 2) (cont’d)2.4.3 Type 3 - CrateringA condition under the die pad metallization in which the insulating layer (oxide or interlayer dielectric) and the bulk material (silicon) separate or chip out. Separation interfaces which show pits or depressions in the insulating layer (not extending into the bulk) are not considered craters. It should be noted that cratering can be caused by several factors including the wire bonding operation, the post-bonding processing, and even the act of shear testing itself. Cratering present prior to the shear test operation is unacceptable.2.4.4 Type 4 - Arm Contacts Specimen (Bonding Surface Contact)The shear tool contacts the bonding surface to produce an invalid shear value. This condition may be due to improper placement of the specimen, a low shear height or instrument malfunction. This bond shear type is not acceptable and shall be eliminated from the shear data.2.4.5 Type 5 - Shearing SkipThe shear tool removes only the topmost portion of the ball or wedge bond. This condition may be due to improper placement of the specimen, a high shear height or instrument malfunction. This bond shear type is not acceptable and shall be eliminated from the shear data.2.4.6 Type 6 - Bond Pad (or Bonding Surface) LiftA separation between the bonding surface metallization and the underlying substrate or base material. There is evidence of bonding surface metallization remaining attached to the ball or wedge bond.Test Method B116JEDEC Standard 22-B116Page 4Test Method B1162 Terms and Definitions (cont’d)2.4 Definition of Bond Shear Codes for Ball and Wedge Bonds (see Figure 2) (cont’d)TYPE 1: Bond Lift TYPE 2: Bond Shear - Gold/AluminumTYPE 4: Bonding Surface ContactTYPE 3: Cratering TYPE 5: Shearing Skip TYPE 6: Bonding Surface LiftFigure 2 — Bond Shear CodesExamples shown here are for ball bonds. These same modes also apply to wedge and stitch bonds.JEDEC Standard 22-B116Page 5 2 Terms and Definitions (cont’d)2.5 Shear Tool or ArmA tungsten carbide, or equivalent, chisel with specific angles on the bottom and back of the tool to ensure a shearing action.underlying bonding pad, and the ball bond-bonding pad intermetallic weld interface.2.6 Wedge BondThe adhesion or weld of a thin wire, usually aluminum, to a package bonding surface, usually a plated leadframe post or finger, using an ultrasonic wire bonding process. A wedge bond is sometimes also called a stitch bond. The wedge bond includes the compressed (ultrasonically bonded) area of the wire and the underlying bonding surface. For bonding to an aluminum alloy die bond pad, there is no wedge bond-bond pad intermetallic because the two materials are of the same composition, but the two materials are recrystallized together by the ultrasonic energy of the welding process.3 Apparatus and materialThe apparatus and materials required for bond shear shall be as follows:3.1 Inspection EquipmentAn optical microscope system or scanning electron microscope providing a minimum of 70X magnification.3.2 Measurement EquipmentAn optical microscope/measurement system capable of measuring the bond diameter to within ± 0.0001 inch (0.1 mil).3.3 WorkholderFixture used to hold the part being tested parallel to the shearing plane and perpendicular to the shear tool. The fixture shall also eliminate part movement during bond shear testing. If using a caliper controlled workholder, place the holder so that the shear motion is against the positive stop of the caliper. This is to ensure that the recoil movement of the caliper controlled workholder does not influence the bond shear test.3.4 Bond Shear EquipmentThe bond shear equipment must be capable of precision placement of the shearing tool (±2.54µm or ±0.10 mil) above the substrate. The specified distance (h) above the topmost part of the bonding surface shall ensure the shear tool does not contact the surface of the die and shall be less than the distance from the topmost part of the bonding surface to the center line (C L) of the ball or wedge bond.Test Method B116JEDEC Standard 22-B116Page 63 Apparatus and material (cont’d)3.5 Bond Shear ToolRequired shear tool parameters include but are not limited to: flat shear face, sharp shearing edge, shearing width of a minimum of 1.2X the bond diameter or bond length. The shearing tool should be designed so as to prevent ploughing and drag during testing. The tool should be clean and free of chips or other defects that will interfere with the shearing test.4 Procedure4.1 CalibrationBefore performing the bond shear test, it must be determined that the equipment has been calibrated in accordance with manufacturer's specifications and is presently in calibration. Recalibration is required if the equipment is moved to another location.4.2 Visual Examination of Bonds to be Tested After DecapsulationIf performing bond shear testing on a part which has been opened using wet chemical and/or dry etch techniques, the bond pads shall be examined to ensure there is no absence of metallization on the bonding surface area due to chemical etching, and wire bonds are attached to the bonding surface. Those ball or wedge bonds on bond pads with significant chemical attack or absence of metallization shall not be used for ball shear testing. It is possible that wire bonds on bonding surfaces without degradation from chemical attack may not be attached to the bonding surface due to other causes (e.g., package stress). These wire bonds are considered valid and shall be included in the shear data as a zero (0) gram value. Bonds must also be examined to determine if adjacent interfering structures are far enough away to allow suitable placement and clearance (above the bonding surface and between adjacent bonds) for the shear test tool. 4.3 Sample SizesSample sizes shall be a minimum specified by SPC controls in effect for specific processes, or as specified in the applicable procurement document4.4 Measurement of the Ball Bond Diameter to Determine the Ball Bond Shear Failure Criteria Once the bonding surfaces have been examined and before performing bond shear testing, the diameter of all ball bonds to be tested shall be measured and recorded. For asymmetrical bonds, determine the average using both the largest (d large) and the smallest (d small) diameter values (see Figure 3). These ball bond diameter measurements shall be used to determine the mean, or average, diameter value. The resulting mean, or average, ball bond diameter shall then be used to establish the failure criteria as defined in Figure 4 and Table 1. If process monitor data has established the nominal ball bond diameter, then that value may be used to determine the failure criteria as defined in Figure 4 and Table 1.Test Method B116JEDEC Standard 22-B116Page 7Test Method B1164 Procedure (cont’d)4.4 Measurement of the Ball Bond Diameter to Determine the Ball Bond Shear Failure Criteria(cont’d)SYMMETRICAL ASYMMETRICALFigure 3 — Ball bond measurement (symmetrical vs. asymmetrical)MINIMUM SHEAR VALUESBALL BOND DIAMETER (mils)S H E A R S T R E N G T H (g r a m s )0102030405060708090100110Figure 4 — Minimum recommended individual and average ball bond shear values(see Table 1 for exact bond shear values)JEDEC Standard 22-B116Page 8Test Method B1164 Procedure (cont’d)Table 1 — Minimum recommended individual and sample average ball bond shear valuesDiameter(mils)Minimum Shear Average (grams)Minimum Individual Shear Reading (grams)2.012.6 5.72.114.0 6.82.215.58.12.317.19.52.418.810.92.520.612.42.622.414.02.724.415.62.826.517.42.928.619.23.030.821.13.133.223.13.235.625.13.338.127.23.440.729.43.543.431.73.646.234.13.749.136.53.852.139.13.955.241.74.058.344.34.161.647.14.265.050.04.368.452.94.471.955.84.575.659.04.679.362.14.783.165.34.887.068.64.991.072.05.095.175.5Note: These shear values are applicable to gold wire ball bonds on aluminum alloy bonding surfacesJEDEC Standard 22-B116Page 9 4.5 Performing the Bond Shear TestThe bond shear equipment shall pass all self diagnostic tests before beginning the test. The bond shear equipment and test area shall be free of excessive vibration or movement. Examine the shear tool to verify it is in good condition and is not bent or damaged. Check the shear tool to verify it is in the up position.Adjust the workholder to match the part being tested. Secure the part to the workholder. Make sure the surface of the die is parallel to the shearing plane of the shear tool. It is important that the shear tool does not contact the surface of the die or adjacent structures during the shearing operation as this will give incorrect high readings.Position the part so that the bond to be tested is located adjacent to the shear tool. Lower the shear tool, or raise the part depending upon shear equipment used, to approximately the surface from which the bond is to be sheared but not contacting the surface (approximately the thickness of the bond above the surface). Position the ball bond to be tested so that the shear motion will travel perpendicular to the surface edge. Position the wedge bond to be tested so that the shear motion will travel toward the long side of the wedge bond and is free of any interference (i.e. shear the outside bond first and then shear toward the sheared wedge bond). Position the shear tool within approximately one ball (for ball bonds) or wire diameter (for wedge/stitch bonds) of the bond to be shear tested and shear the bond.4.6 Examination of Sheared BondsAll bonds shall be sheared in a planned/defined sequence so that later visual examination can determine which shear values should be eliminated because of an improper shear. The bonds shall be examined using at least 70X magnification to determine if the shear tool skipped over the bond (type 5) or the tool scraped or plowed into the surface of the die (type 4). Readings in which either a type 4 or 5 defective shear condition occurred shall be eliminated from the shear data (see Figure 2).Sheared bonds in which a type 3 cratering condition has occurred shall be investigated further to determine whether the cracking and/or cratering is due to the bonding process or the act of shear testing. Cratering caused prior to the shear test operation is unacceptable. Cratering resulting from the act of shear testing shall be considered acceptable and included in the shear data.4.7 Footprint Inspection of Aluminum Wedge BondsAll wire bonding processes to both the die bond pad and the leadframe post shall have a bond footprint inspection performed. For wires too small for bond shear testing (less than 1.25 mils in height at the compressed bonded area), the wire shall be removed at the bond location using a small sharp blade. The removal of the wire shall be sufficient such that the bond interface can be visually inspected and the metallurgical bond area determined. For larger wires after bond shear testing, all devices shall be inspected to examine the failure mode and to determine the bond footprint coverage.Test Method B116JEDEC Standard 22-B116Page 104 Procedure (cont’d)4.8 Bond Shear DataData shall be maintained for each bond sheared. The data shall identify the bond (location, bond diameter, wire material, method of bonding, and material bonded to), the shear strength, and the shear code number.4.9 Shear CodesFor each bond sheared, a code as defined in Figure 2 shall be recorded.5 Failure criteriaThe following failure criteria are not valid for devices that have undergone environmental stress testing or have been desoldered from circuit boards.5.1 Failure Criteria for Ball BondsThe recommended minimum individual and sample average bond shear values are shown in Figure 4 and Table 1. This criteria is applicable to gold wire ball bonds on aluminum alloy bond pads. Other material combinations may require a new set of failure criteria.Alternate minimum bond shear values may be proposed by the supplier if supporting data justifies the proposed minimum values.5.2 Failure Criteria for Aluminum Wedge BondsThe wedge bonds on a part shall be considered acceptable if the minimum shear values are equal to or greater than the manufacturer's tensile strength of the bond wire.In addition, the percent of the bond footprint in which bonding should occur shall be no less than 50%. If it is necessary to control the wire bonding process using SPC for percent coverage, a Cpk value can be calculated to this limit.6 SummaryThe quality level and test conditions are contained within this document unless otherwise specified in the applicable Part Specification and/or Part Drawing.Test Method B116。
半导体封装工艺介绍
Lead Frame 引线框架
Die Pad 芯片焊盘 Gold Wire
金线
Epoxy 银浆
Mold Compound 环氧树脂
Sino-i Technology Ltd.
ITSM / ITIL
Raw Material in Assembly(封装原材料)
【Wafer】晶圆
……
Copyright © Sino-i Technology Limited All rights reserved
Sino-i Technology Ltd.
ITSM / ITIL
FOL– Front of Line前段工艺
Wafer
2nd Optical 第二道光检
Die Attach 芯片粘接
Back
Grinding 磨片
Wafer Wash 晶圆清洗
Epoxy Cure 银浆固化
EOL
Wafer Mount 晶圆安装
【Gold Wire】焊接金线
➢实现芯片和外部引线框架的电性和物 理连接；
➢金线采用的是99.99%的高纯度金； ➢同时，出于成本考虑，目前有采用铜
线和铝线工艺的。优点是成本降低， 同时工艺难度加大，良率降低； ➢线径决定可传导的电流；0.8mil， 1.0mil，1.3mils，1.5mils和2.0mils ；
Copyright © Sino-i Technology Limited All rights reserved
陶瓷封 装
金属封 装
Sino-i Technology Ltd.
ITSM / ITIL
IC Package （IC的封装形式）
• 按与PCB板的连接方式划分为：
金球推力国际标准Wire Bond Shear Test
EIA/JEDEC STANDARDWire Bond Shear Test Method EIA/JESD22-B116JULY 1998ELECTRONIC INDUSTRIES ALLIANCENOTICEJEDEC standards and publications contain material that has been prepared, reviewed, and approved through the JEDEC Council level and subsequently reviewed and approved by the EIA General Counsel.JEDEC standards and publications are designed to serve the public interest through eliminating misunderstandings between manufacturers and purchasers, facilitating interchangeability and improvement of products, and assisting the purchaser in selecting and obtaining with minimum delay the proper product for use by those other than JEDEC members, whether the standard is to be used either domestically or internationally.JEDEC standards and publications are adopted without regard to whether or not their adoption may involve patents or articles, materials, or processes. By such action JEDEC does not assume any liability to any patent owner, nor does it assume any obligation whatever to parties adopting the JEDEC standards or publications.The information included in JEDEC standards and publications represents a sound approach to product specification and application, principally from the solid state device manufacturer viewpoint. Within the JEDEC organization there are procedures whereby a JEDEC standard or publication may be further processed and ultimately become an EIA standard.No claims to be in conformance with this standard may be made unless all requirements stated in the standard are met.Inquiries, comments, and suggestions relative to the content of this JEDEC standard or publication should be addressed to JEDEC Solid State Technology Division, 2500 Wilson Boulevard, Arlington, VA 22201-3834, (703)907-7560/7559 or \jedec.Published by©ELECTRONIC INDUSTRIES ALLIANCEEngineering Department2500 Wilson BoulevardArlington, VA 22201-3834"Copyright" does not apply to JEDEC member companies as they arefree to duplicate this document in accordance with the latest revision ofJEDEC Publication 21 "Manual of Organization and Procedure".PRICE: Please refer to the currentCatalog of JEDEC Engineering Standards and Publications or call Global Engineering Documents, USA and Canada (1-800-854-7179), International (303-397-7956)Printed in the U.S.A.All rights reservedJEDEC Standard 22-B116Page 1WIRE BOND SHEAR TEST(From JEDEC Council Ballot JCB-97-64, formulated under the cognizance of the JC-14.1 Subcommittee on Reliability Test Methods for Packaged Devices.)1 ScopeThis test provides a means for determining the strength of the bond between a gold ball bond on a die bonding surface or an aluminum wedge or stitch bond on a package bonding surface, and may be performed on pre-encapsulation or post-encapsulation parts. This measure of bond strength is extremely important in determining two features:1) the integrity of the metallurgical bond which has been formed.2) the quality of gold and aluminum wire bonds to die or package bonding surfaces.These test methods cover ball bonds made with small diameter (from 18 to 76 µm, or from 0.7 to 3 mil) wire and wedge bonds made with larger diameter (minimum of 3 mil) wire, of the type used in integrated circuits and hybrid microelectronic assemblies.These test methods can be used only when the ball height (at least 10.16 µm or 0.4 mil) and diameter for ball bonds, or the wire height (at least 1.25 mils in height at the compressed bonded area) of the wedge bond, are large enough and adjacent interfering structures are far enough away to allow suitable placement and clearance (above the bonding pad or leadframe post and between adjacent bonds) of the shear test chisel. This test method may also apply to gold wedge or stitch bonds if the wire is thick enough to allow shearing of the wire from the bonding surface without smearing similar to a shearing skip.The wire bond shear test is destructive. It is appropriate for use in process development, process control and/or quality assurance.2 Terms and DefinitionsThe terms and definitions shall be in accordance with the following paragraphs.2.1 Ball BondThe adhesion or welding of a thin wire, usually gold, to a die pad metallization, usually an aluminum alloy, using a thermosonic wire bond process. The ball bond includes the enlarged spherical, or nail head, portion of the wire (provided by the flame-off and first bonding operation in the thermal compression and thermosonic process, or both), the underlying bonding pad and the ball bond-bonding pad intermetallic weld interface.2.2 Bonding SurfaceEither 1) the die pad metallization or 2) the package surface metallization to which the wire is ball, wedge or stitch bonded.Test Method B116JEDEC Standard 22-B116Page 22 Terms and Definitions (cont’d)2.3 Bond ShearA process in which an instrument uses a chisel shaped tool to shear or push a ball or wedge bond off the bond pad (see Figure 1). The force required to cause this separation is recorded and is referred to as the bond shear force. The bond shear force of a gold ball bond, when correlated to the diameter of the ball bond, is an indicator of the quality of the metallurgical bond between the gold ball bond and the bond pad metallization. The bond shear force of an aluminum wedge bond, when compared to the manufacturer's tensile strength of the wire, is an indicator of the integrity of the weld between the aluminum wire and the bond pad or package surface metallization.Figure 1 — Bond Shear set-up2.4 Definition of Bond Shear Codes for Ball and Wedge Bonds (see Figure 2)2.4.1 Type 1 - Bond LiftA separation of the entire wire bond from the bonding surface with only an imprint being left on the bonding surface. There is very little evidence of intermetallic formation or welding, or disturbance of the bonding surface metallization.2.4.2 Type 2 - Bond ShearA separation of the wire bond where 1) A thin layer of the bonding surface metallization remains with the wire bond and an impression is left in the bonding surface, or 2) Intermetallics remain on the bonding surface and with the wire bond, or 3) A major portion of the wire bond remains on the bonding surface. Test Method B116JEDEC Standard 22-B116Page 3 2 Terms and Definitions (cont’d)2.4 Definition of Bond Shear Codes for Ball and Wedge Bonds (see Figure 2) (cont’d)2.4.3 Type 3 - CrateringA condition under the die pad metallization in which the insulating layer (oxide or interlayer dielectric) and the bulk material (silicon) separate or chip out. Separation interfaces which show pits or depressions in the insulating layer (not extending into the bulk) are not considered craters. It should be noted that cratering can be caused by several factors including the wire bonding operation, the post-bonding processing, and even the act of shear testing itself. Cratering present prior to the shear test operation is unacceptable.2.4.4 Type 4 - Arm Contacts Specimen (Bonding Surface Contact)The shear tool contacts the bonding surface to produce an invalid shear value. This condition may be due to improper placement of the specimen, a low shear height or instrument malfunction. This bond shear type is not acceptable and shall be eliminated from the shear data.2.4.5 Type 5 - Shearing SkipThe shear tool removes only the topmost portion of the ball or wedge bond. This condition may be due to improper placement of the specimen, a high shear height or instrument malfunction. This bond shear type is not acceptable and shall be eliminated from the shear data.2.4.6 Type 6 - Bond Pad (or Bonding Surface) LiftA separation between the bonding surface metallization and the underlying substrate or base material. There is evidence of bonding surface metallization remaining attached to the ball or wedge bond.Test Method B116JEDEC Standard 22-B116Page 4Test Method B1162 Terms and Definitions (cont’d)2.4 Definition of Bond Shear Codes for Ball and Wedge Bonds (see Figure 2) (cont’d)TYPE 1: Bond Lift TYPE 2: Bond Shear - Gold/AluminumTYPE 4: Bonding Surface ContactTYPE 3: Cratering TYPE 5: Shearing Skip TYPE 6: Bonding Surface LiftFigure 2 — Bond Shear CodesExamples shown here are for ball bonds. These same modes also apply to wedge and stitch bonds.JEDEC Standard 22-B116Page 5 2 Terms and Definitions (cont’d)2.5 Shear Tool or ArmA tungsten carbide, or equivalent, chisel with specific angles on the bottom and back of the tool to ensure a shearing action.underlying bonding pad, and the ball bond-bonding pad intermetallic weld interface.2.6 Wedge BondThe adhesion or weld of a thin wire, usually aluminum, to a package bonding surface, usually a plated leadframe post or finger, using an ultrasonic wire bonding process. A wedge bond is sometimes also called a stitch bond. The wedge bond includes the compressed (ultrasonically bonded) area of the wire and the underlying bonding surface. For bonding to an aluminum alloy die bond pad, there is no wedge bond-bond pad intermetallic because the two materials are of the same composition, but the two materials are recrystallized together by the ultrasonic energy of the welding process.3 Apparatus and materialThe apparatus and materials required for bond shear shall be as follows:3.1 Inspection EquipmentAn optical microscope system or scanning electron microscope providing a minimum of 70X magnification.3.2 Measurement EquipmentAn optical microscope/measurement system capable of measuring the bond diameter to within ± 0.0001 inch (0.1 mil).3.3 WorkholderFixture used to hold the part being tested parallel to the shearing plane and perpendicular to the shear tool. The fixture shall also eliminate part movement during bond shear testing. If using a caliper controlled workholder, place the holder so that the shear motion is against the positive stop of the caliper. This is to ensure that the recoil movement of the caliper controlled workholder does not influence the bond shear test.3.4 Bond Shear EquipmentThe bond shear equipment must be capable of precision placement of the shearing tool (±2.54µm or ±0.10 mil) above the substrate. The specified distance (h) above the topmost part of the bonding surface shall ensure the shear tool does not contact the surface of the die and shall be less than the distance from the topmost part of the bonding surface to the center line (C L) of the ball or wedge bond.Test Method B116JEDEC Standard 22-B116Page 63 Apparatus and material (cont’d)3.5 Bond Shear ToolRequired shear tool parameters include but are not limited to: flat shear face, sharp shearing edge, shearing width of a minimum of 1.2X the bond diameter or bond length. The shearing tool should be designed so as to prevent ploughing and drag during testing. The tool should be clean and free of chips or other defects that will interfere with the shearing test.4 Procedure4.1 CalibrationBefore performing the bond shear test, it must be determined that the equipment has been calibrated in accordance with manufacturer's specifications and is presently in calibration. Recalibration is required if the equipment is moved to another location.4.2 Visual Examination of Bonds to be Tested After DecapsulationIf performing bond shear testing on a part which has been opened using wet chemical and/or dry etch techniques, the bond pads shall be examined to ensure there is no absence of metallization on the bonding surface area due to chemical etching, and wire bonds are attached to the bonding surface. Those ball or wedge bonds on bond pads with significant chemical attack or absence of metallization shall not be used for ball shear testing. It is possible that wire bonds on bonding surfaces without degradation from chemical attack may not be attached to the bonding surface due to other causes (e.g., package stress). These wire bonds are considered valid and shall be included in the shear data as a zero (0) gram value. Bonds must also be examined to determine if adjacent interfering structures are far enough away to allow suitable placement and clearance (above the bonding surface and between adjacent bonds) for the shear test tool. 4.3 Sample SizesSample sizes shall be a minimum specified by SPC controls in effect for specific processes, or as specified in the applicable procurement document4.4 Measurement of the Ball Bond Diameter to Determine the Ball Bond Shear Failure Criteria Once the bonding surfaces have been examined and before performing bond shear testing, the diameter of all ball bonds to be tested shall be measured and recorded. For asymmetrical bonds, determine the average using both the largest (d large) and the smallest (d small) diameter values (see Figure 3). These ball bond diameter measurements shall be used to determine the mean, or average, diameter value. The resulting mean, or average, ball bond diameter shall then be used to establish the failure criteria as defined in Figure 4 and Table 1. If process monitor data has established the nominal ball bond diameter, then that value may be used to determine the failure criteria as defined in Figure 4 and Table 1.Test Method B116JEDEC Standard 22-B116Page 7Test Method B1164 Procedure (cont’d)4.4 Measurement of the Ball Bond Diameter to Determine the Ball Bond Shear Failure Criteria(cont’d)SYMMETRICAL ASYMMETRICALFigure 3 — Ball bond measurement (symmetrical vs. asymmetrical)MINIMUM SHEAR VALUESBALL BOND DIAMETER (mils)S H E A R S T R E N G T H (g r a m s )0102030405060708090100110Figure 4 — Minimum recommended individual and average ball bond shear values(see Table 1 for exact bond shear values)JEDEC Standard 22-B116Page 8Test Method B1164 Procedure (cont’d)Table 1 — Minimum recommended individual and sample average ball bond shear valuesDiameter(mils)Minimum Shear Average (grams)Minimum Individual Shear Reading (grams)2.012.6 5.72.114.0 6.82.215.58.12.317.19.52.418.810.92.520.612.42.622.414.02.724.415.62.826.517.42.928.619.23.030.821.13.133.223.13.235.625.13.338.127.23.440.729.43.543.431.73.646.234.13.749.136.53.852.139.13.955.241.74.058.344.34.161.647.14.265.050.04.368.452.94.471.955.84.575.659.04.679.362.14.783.165.34.887.068.64.991.072.05.095.175.5Note: These shear values are applicable to gold wire ball bonds on aluminum alloy bonding surfacesJEDEC Standard 22-B116Page 9 4.5 Performing the Bond Shear TestThe bond shear equipment shall pass all self diagnostic tests before beginning the test. The bond shear equipment and test area shall be free of excessive vibration or movement. Examine the shear tool to verify it is in good condition and is not bent or damaged. Check the shear tool to verify it is in the up position.Adjust the workholder to match the part being tested. Secure the part to the workholder. Make sure the surface of the die is parallel to the shearing plane of the shear tool. It is important that the shear tool does not contact the surface of the die or adjacent structures during the shearing operation as this will give incorrect high readings.Position the part so that the bond to be tested is located adjacent to the shear tool. Lower the shear tool, or raise the part depending upon shear equipment used, to approximately the surface from which the bond is to be sheared but not contacting the surface (approximately the thickness of the bond above the surface). Position the ball bond to be tested so that the shear motion will travel perpendicular to the surface edge. Position the wedge bond to be tested so that the shear motion will travel toward the long side of the wedge bond and is free of any interference (i.e. shear the outside bond first and then shear toward the sheared wedge bond). Position the shear tool within approximately one ball (for ball bonds) or wire diameter (for wedge/stitch bonds) of the bond to be shear tested and shear the bond.4.6 Examination of Sheared BondsAll bonds shall be sheared in a planned/defined sequence so that later visual examination can determine which shear values should be eliminated because of an improper shear. The bonds shall be examined using at least 70X magnification to determine if the shear tool skipped over the bond (type 5) or the tool scraped or plowed into the surface of the die (type 4). Readings in which either a type 4 or 5 defective shear condition occurred shall be eliminated from the shear data (see Figure 2).Sheared bonds in which a type 3 cratering condition has occurred shall be investigated further to determine whether the cracking and/or cratering is due to the bonding process or the act of shear testing. Cratering caused prior to the shear test operation is unacceptable. Cratering resulting from the act of shear testing shall be considered acceptable and included in the shear data.4.7 Footprint Inspection of Aluminum Wedge BondsAll wire bonding processes to both the die bond pad and the leadframe post shall have a bond footprint inspection performed. For wires too small for bond shear testing (less than 1.25 mils in height at the compressed bonded area), the wire shall be removed at the bond location using a small sharp blade. The removal of the wire shall be sufficient such that the bond interface can be visually inspected and the metallurgical bond area determined. For larger wires after bond shear testing, all devices shall be inspected to examine the failure mode and to determine the bond footprint coverage.Test Method B116JEDEC Standard 22-B116Page 104 Procedure (cont’d)4.8 Bond Shear DataData shall be maintained for each bond sheared. The data shall identify the bond (location, bond diameter, wire material, method of bonding, and material bonded to), the shear strength, and the shear code number.4.9 Shear CodesFor each bond sheared, a code as defined in Figure 2 shall be recorded.5 Failure criteriaThe following failure criteria are not valid for devices that have undergone environmental stress testing or have been desoldered from circuit boards.5.1 Failure Criteria for Ball BondsThe recommended minimum individual and sample average bond shear values are shown in Figure 4 and Table 1. This criteria is applicable to gold wire ball bonds on aluminum alloy bond pads. Other material combinations may require a new set of failure criteria.Alternate minimum bond shear values may be proposed by the supplier if supporting data justifies the proposed minimum values.5.2 Failure Criteria for Aluminum Wedge BondsThe wedge bonds on a part shall be considered acceptable if the minimum shear values are equal to or greater than the manufacturer's tensile strength of the bond wire.In addition, the percent of the bond footprint in which bonding should occur shall be no less than 50%. If it is necessary to control the wire bonding process using SPC for percent coverage, a Cpk value can be calculated to this limit.6 SummaryThe quality level and test conditions are contained within this document unless otherwise specified in the applicable Part Specification and/or Part Drawing.Test Method B116。
JESD22-B117A Solder Ball Shear(锡球剪切力测试标准)
Inquiries, comments, and suggestions relative to the content of this JEDEC standard or publication should be addressed to JEDEC at the address below, or call (703) 907-7559 or
be used either domestically or internationally.
JEDEC standards and publications are adopted without regard to whether or not their adoption may involve patents or articles, materials, or processes. By such action JEDEC does not assume any liability to any patent owner, nor does it assume any obligation whatever to parties adopting
JEDEC STANDARD
Solder Ball Shear
JESБайду номын сангаас22-B117A
(Revision of JESD22-B117, July 2000) OCTOBER 2006
JEDEC SOLID STATE TECHNOLOGY ASSOCIATION
芯片封装详细图解
SMT SMT
芯片封装详细图解
Logo
IC Package （IC的封装形式）
• 按封装外型可分为： SOT 、QFN 、SOIC、TSSOP、QFP、BGA、CSP等；
封装形式和工艺逐步高级和复杂
• 决定封装形式的两个关键因素: ➢ 封装效率。芯片面积/封装面积，尽量接近1:1； ➢ 引脚数。引脚数越多，越高级，但是工艺难度也相应增加；
EOL
Annealing 电镀退火
Trim/Form 切筋/成型
Molding 注塑
Laser Mark 激光打字
De-flash/ Plating 去溢料/电镀
PMC 高温固化
4th Optical 第四道光检
Note： Just For TSSOP/SOIC/QFP package
芯片封装详细图解
Die Attach 芯片粘接
Back Grinding
磨片
Wafer Wash 晶圆清洗
Epoxy Cure 银浆固化
EOL
Wafer Mount 晶圆安装
Wafer Saw 晶圆切割
Wire Bond 引线焊接
3rd Optical 第三道光检
芯片封装详细图解
Logo
FOL– Back Grinding背面减薄
Die Attach 芯片粘接
Epoxy Cure 银浆固化
Epoxy Storage： 零下50度存放；
Epoxy Aging： 使用之前回温，除 去气泡；
Epoxy Writing： 点银浆于L/F的Pad 上，Pattern可选；
芯片封装详细图解
Logo
FOL– Die Attach 芯片粘接
半导体封装流程完整
Cap下降到芯片的Pad 上，加Force和Power 形成第一焊点
Cap牵引金 线上升
Cap运动轨迹形成 良好的Wire Loop
Cap下降到Lead Frame形成焊接
Cap侧向划开，将金 线切断，形成鱼尾
Cap上提，完成一次 动作
Logo
FOL– Wire Bonding 引线焊接
Wire Bond的质量控制：
第二步：将液态环氧树脂涂到引线框架的台载 片台上。
Logo
FOL– Die Attach 芯片粘接
第三步：将芯片粘贴到涂好环氧树脂的引线框 架上。
Logo
FOL– Epoxy Cure环氧树脂固化
Die Attach质量检查： 环氧树脂固化： -175°C，1个小时； N2环境，防止氧化： Die Shear（芯片剪切力）
• 按封装材料划分为： 金属封装、陶瓷封装、塑料封装 • 按照和PCB板连接方式分为： PTH封装和SMT封装 • 按照封装外型可分为： SOT、SOIC、TSSOP、QFN、QFP、BGA、CSP等；
Logo
IC Package （IC的封装形式）
• 按封装材料划分为：
塑料封装
陶瓷封装
金属封装主要用于军工或航天技术，无 商业化产品； 陶瓷封装优于金属封装，也用于军事产 品，占少量商业化市场； 塑料封装用于消费电子，因为其成本低 ，工艺简单，可靠性高而占有绝大部分 的市场份额；
Logo
FOL– Wafer Saw晶圆切割
Wafer Mount 晶圆安装 Wafer Saw 晶圆切割 Wafer Wash 清洗
将晶圆粘贴在蓝膜（Mylar）上，使得即使被切割开后，不会散落；
通过Saw Blade将整片Wafer切割成一个个独立的Dice，方便后面的 Die Attach等工序；
芯片封装详细图解
22
Logo
FOL– Epoxy Cure 银浆固化
银浆固化： 175°C，1个小时； N2环境，防止氧化：
Die Attach质量检查： Die Shear（芯片剪切力）
23
Logo
FOL– Wire Bonding 引线焊接
※利用高纯度的金线（Au） 、铜线（Cu）或铝线（Al）把 Pad 和 Lead通过焊接的方法连接起来。Pad是芯片上电路的外接 点，Lead是 Lea现方式做保护处理对用户上传分享的文档内容本身不做任何修改或编辑并不能对任何下载内容负责
Logo 艾
Introduction of IC Assembly Process IC封装工艺简介
1
Logo
IC Process Flow
Customer 客户
IC Design IC设计
18
Logo
FOL– 2nd Optical Inspection二光检查
主要是针对Wafer Saw之后在显微镜下进行Wafer的外观检查，是否有 出现废品。
Chipping Die 崩边
19
Logo
FOL– Die Attach 芯片粘接
Write Epoxy 点银浆
12
Logo
Raw Material in Assembly(封装原材料)
【Epoxy】银浆
➢成分为环氧树脂填充金属粉末（Ag）；
➢有三个作用：将Die固定在Die Pad上； 散热作用，导电作用；
➢-50°以下存放，使用之前回温24小时；
13
Logo
Typical Assembly Process Flow
EFO：打火杆。用于在形成第一焊点时的烧球。打火杆打火形成高温， 将外露于Capillary前端的金线高温熔化成球形，以便在Pad上形成第一 焊点（Bond Ball）；
半导体封装工艺介绍PPT课件
SMT IC组装
Wafer Fab 晶圆制造
Wafer Probe 晶圆测试
Assembly& Test IC 封装测试
2021
2
IC Package （IC的封装形式）
Package--封装体：
➢指芯片（Die）和不同类型的框架（L/F）和塑封料（EMC） 形成的不同外形的封装体。
➢IC Package种类很多，可以按以下标准分类：
【Wafer】晶圆
……
2021
9
Raw Material in Assembly(封装 原材料)
【Lead Frame】引线框架
➢提供电路连接和Die的固定作用；
➢主要材料为铜，会在上面进行镀银、 NiPdAu等材料；
➢L/F的制程有Etch和Stamp两种；
➢易氧化，存放于氮气柜中，湿度小 于40%RH;
散热作用，导电作用；
➢-50°以下存放，使用之前回温24小时；
2021
13
Typical Assembly Process Flow
FOL/前段
EOL/中段
Plating/电镀
EOL/后段
Final Test/测试
2021
14
FOL– Front of Line前段工艺
Wafer
2nd现方式做保护处理对用户上传分享的文档内容本身不做任何修改或编辑并不能对任何下载内容负责
艾
Introduction of IC Assembly Process IC封装工艺简介
2021
1
IC Process Flow
Customer 客户
IC Design IC设计
Taping 粘胶带
半导体封装工艺介绍
Ball Shear（金球推力）
Wire Loop（金线弧高）
Ball Thickness（金球厚度）
Crater Test（弹坑测试） Intermetallic（金属间化合物测试）
Thickness Size
FOL– 3rd Optical Inspection三 光检查
检查Die Attach和Wire Bond之后有无各种废品
➢Molding参数：
Molding Temp：175~185°C；Clamp Pressure：3000~4000N； Transfer Pressure：1000~1500Psi；Transfer Time：5~15s； Cure Time：60~120s；
EOL– Molding（注塑）
Molding Cycle
Epoxy Storage： 零下50度存放；
Epoxy Aging： 使用之前回温，除 去气泡；
Epoxy Writing： 点银浆于L/F的Pad 上，Pattern可选；
FOL– Die Attach 芯片粘接
芯片拾取过程： 1、Ejector Pin从wafer下方的Mylar顶起芯片，使之便于
Wafer Mount 晶圆安装
Wafer Saw 晶圆切割
Wire Bond 引线焊接
3rd Optical 第三道光检
FOL– Back Grinding背面减薄
Taping 粘胶带
Back Grinding
磨片
De-Taping 去胶带
➢将从晶圆厂出来的Wafer进行背面研磨，来减薄晶圆达到 封装需要的厚度（8mils~10mils）；
FOL/前段
EOL/中段 Plating/电镀
IC芯片封装流程
PPT文档演模板
IC芯片封装流程
EOL– Trim&Form（切筋成型）
Trim：将一条片的Lead Frame切割成单独的Unit（IC）的过程；
Form：对Trim后的IC产品进行引脚成型，达到工艺需要求的形状， 并放置进Tube或者Tray盘中；
PPT文档演模板
EOL– Post Annealing Bake（电镀 退火）
晶须，又叫 Whisker，是指锡 在长时间的潮湿环 境和温度变化环境 下生长出的一种须 状晶体，可能导致 产品引脚的短路。
晶须
目的： 让无铅电镀后的产品在高温下烘烤一段时间，目的在于 消除电镀层潜在的晶须生长（Whisker Growth）的问题;
IC芯片封装流程
FOL– Epoxy Cure 银浆固化
银浆固化： 175°C，1个小时； N2环境，防止氧化：
PPT文档演模板
Die Attach质量检查： Die Shear（芯片剪切力）
IC芯片封装流程
FOL– Wire Bonding 引线焊接
※利用高纯度的金线（Au） 、铜线（Cu）或铝线（Al）把 Pad 和 Lead通过焊接的方法连接起来。Pad是芯片上电路的外接 点，Lead是 Lead Frame上的 连接点。
IC芯片封装流程
FOL– 2nd Optical Inspection二 光检查
主要是针对Wafer Saw之后在显微镜下进行Wafer的外观检查，是否有 出现废品。
PPT文档演模板
Chipping Die 崩边
IC芯片封装流程
FOL– Die Attach 芯片粘接
Write Epoxy 点银浆
焊线拉力检测
2
Some Basics
• The maximum force that the pull test can detect is limited by the strength of the wire. • The Heat Affected Zone (HAZ) above the ball should be the weakest part of a wirebond. • Both the ball and the wedge bond welded areas are several times larger than the wire cross section. If the bond lifts or fractures at the interface the bond was defective. • Preferred failure modes are neck, midspan, heel of second bond, in that order. • The breaking force measured at the hook is not the same as the force exerted on the wire.
12
1st Bond Break Force 2nd Bond Break Force
X
Pull-Test Mid-Span Point
11
Conclusions
• Understand the geometry. • The goal is strong bonds, not high numbers. • Be honest, it’s easy to deceive yourself and the customer by pulling in a location that masks a weak bond. • The pull test is limited to the strength of the wire. Shear strength determines the strength of the weld interface. • Very low loops may have low pull strength values for strong welds because the geometry multiplier is >1. • The Pull strength template is a useful tool to explain the variables of the pull test. Especially when there is a communications problem with a customer. Be sure you have the facts on your side.
金线拉力测试标准
金线拉力测试标准
金线拉力测试通常是对金丝或金线的强度和耐力进行测试的一项关键步骤。
这种测试通常涉及将金线拉伸以测量其断裂强度和变形性能。
虽然没有特定的“金线拉力测试标准”，但通常可以参考以下相关的国际标准和方法来进行金线的拉力测试：
1.ASTM E8：美国材料和试验协会（ASTM）发布的标准，涉及拉
伸金属材料的标准试验方法。
虽然它主要用于金属样品，但可
以用于金线的拉伸测试。
2.ISO 6892：国际标准化组织（ISO）发布的金属材料拉伸试验的
国际标准，也可适用于金线的拉伸测试。
3.ASTM B267：ASTM发布的标准，涉及金线的拉伸试验方法。
这个标准通常用于测试黄铜或黄金线。
4.GB/T标准：中国国家标准（GB/T）可能包括有关金线拉力测试
的具体标准和方法。
具体的标准可以根据金线的材料和用途而
有所不同。
5.厂家提供的规格：金线的制造商通常会提供有关其产品的规格
和测试要求。
这些规格通常包括拉力测试的具体方法和标准。
进行金线的拉力测试时，通常需要使用专门的拉力试验机或设备，并按照适用的标准或方法来执行测试。
测试的结果可以用于评估金线的质量、强度和可靠性，以确保其在特定应用中的性能。
请注意，金线的拉力测试可能因金线的材料、直径、形状和用途而有所不同。
因此，在执行测试前，您应该明确定义测试的标准、方
法和要求，并与金线的制造商或相关标准组织进行沟通以获取准确的测试信息。